Member for semiconductor production device

The semiconductor manufacturing apparatus member addresses discharge and chipping issues by configuring the gas flow path diagonally with specific length ratios, ensuring stable gas flow and preventing plug lifting, thus improving process reliability.

WO2026140369A1PCT designated stage Publication Date: 2026-07-02NGK CORP
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
NGK CORP
Filing Date
2025-09-02
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

Existing semiconductor manufacturing apparatus members face issues such as discharge occurring in gaps between the plug body and wafer, chipping at the outlet of the gas flow path, and insufficient gas flow rates due to thin gas flow paths, leading to potential lifting of the object and inefficiencies in the process.

Method used

The semiconductor apparatus member includes a ceramic plate with a plug placement hole and a plug placement hole, where the gas flow path extends diagonally upward from the plug body's upper surface to its outlet, with specific length ratios between the outlet edge, object support surface, and gas flow path sections to prevent lifting and ensure gas flow rate.

Benefits of technology

This configuration prevents the plug from lifting the object, ensures a stable gas flow rate, and minimizes discharge around the outlet, enhancing the reliability and efficiency of the semiconductor manufacturing process.

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  • Figure JP2025030848_02072026_PF_FP_ABST
    Figure JP2025030848_02072026_PF_FP_ABST
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Abstract

A wafer mounting table 10 comprises a ceramic plate 20, a plug placement hole 24, and a plug 50. The plug 50 is disposed in the plug placement hole 24, and has a gas flow path 52. The gas flow path 52 has a gas flow path upper portion which extends obliquely upward from a position near the upper surface of the plug body 51 to an exit. When a longitudinal cross section of a portion around the plug 50 is viewed, 30≤d1≤100, 10≤dr≤50, 100≤d2≤200, and |d2-D|≤50 are satisfied, wherein d1 [μm] is the maximum vertical length between the opening edge of the exit and the bottom surface of the gas flow path upper portion, dr [μm] is the vertical length between a wafer support surface and the upper surface of the plug 50, d2 [μm] is the maximum vertical length on the upstream side of the gas flow path upper portion of the gas flow path 52, and D [μm] is the sum of d1 and dr.
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