Image sensor and electronic apparatus

Abstract

The present disclosure relates to an image sensor and an electronic apparatus that can allow for further improvement in performance. In this image sensor, the following are disposed so as to be intermingled in a pixel array unit: event pixels which detect a brightness change exceeding a prescribed threshold value as the occurrence of an event, and which output event signals; and tone pixels which output pixel signals indicating brightness at a tone level corresponding to the light quantity of incident light. First shield wiring connecting to a prescribed power source voltage is disposed between first wiring, which connects to gate electrodes of first amp transistors that form the event pixels, and vertical signal wiring, which outputs the pixel signals from the tone pixels. This technology can be applied, for instance, to an EVS.

Description

Image Sensor and Electronic Device

[0001] The present disclosure relates to an image sensor and an electronic device, and particularly to an image sensor and an electronic device that can further improve performance.

[0002] Conventionally, a CIS (CMOS (Complementary Metal Oxide Semiconductor) Image Sensor) has color pixels provided with RGB color filters and can capture color images. On the other hand, in recent years, the development of an EVS (Event based Vision Sensor) that detects that the luminance change has exceeded a predetermined threshold as the occurrence of an event has been underway. The EVS can output event data indicating whether the luminance value has changed from the threshold value to the plus side or the minus side for each EVS pixel where an event has occurred.

[0003] For example, Patent Document 1 discloses a solid-state imaging device with a pixel layout in which event pixels that detect that the luminance change has exceeded a predetermined threshold as an event and gradation pixels that output luminance signals of gradation levels corresponding to the amount of incident light are mixed.

[0004] International Publication No. 2023 / 106232

[0005] By the way, conventionally, due to the interference between EVS pixels and color pixels with each other, there have been cases such as false detection of the occurrence of an event and noise generation in pixel signals. In addition, since the locations where EVS pixels are arranged are treated as defective pixels in a color image, there is a concern that the image quality of the color image may deteriorate depending on the pixel layout. Therefore, it is required to improve performance by avoiding false detection of the occurrence of an event and noise generation in pixel signals, and suppressing the deterioration of the image quality of the color image.

[0006] [[ID=] The present disclosure has been made in view of such a situation and aims to further improve performance.

[0007] The image sensor in the first aspect of this disclosure has an image sensor in which an event pixel is arranged in a pixel array such that an event pixel detects when a change in brightness exceeds a predetermined threshold and outputs an event signal, and a grayscale pixel is arranged in a pixel array such that it outputs a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light, and a first shielding wire is arranged between a first wire connected to the gate electrode of a first amplifier transistor constituting the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel, and a first shielding wire connected to a predetermined power supply voltage.

[0008] The electronic device of the first aspect of this disclosure includes an image sensor in which an event pixel is arranged in a pixel array such that an event pixel detects when a change in brightness exceeds a predetermined threshold and outputs an event signal, and a grayscale pixel is arranged in a pixel array such that it outputs a pixel signal indicating a grayscale level of brightness corresponding to the amount of incident light, and a first shield wire is arranged between a first wire connected to the gate electrode of a first amplifier transistor constituting the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel, and a first shield wire connected to a predetermined power supply voltage.

[0009] In the first aspect of this disclosure, event pixels that detect when a brightness change exceeds a predetermined threshold as an event and output an event signal, and grayscale pixels that output a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light are arranged to be mixed in the pixel array, and a first shielding wire connected to a predetermined power supply voltage is arranged between a first wiring connected to the gate electrode of a first amplifier transistor constituting an event pixel and a vertical signal line that outputs a pixel signal from a grayscale pixel.

[0010] The image sensor in the second aspect of this disclosure has an image sensor in which an event pixel is arranged in a pixel array such that an event pixel detects when a change in brightness exceeds a predetermined threshold and outputs an event signal, and a grayscale pixel is arranged in a pixel array such that it outputs a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light, and a shielded wire connected to a predetermined power supply voltage is arranged between a wire connected to an electrode that receives the logarithmically transformed voltage output from the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel.

[0011] The electronic device according to the second aspect of this disclosure includes an image sensor in which an event pixel is arranged in a pixel array such that an event pixel detects when a change in brightness exceeds a predetermined threshold as the occurrence of an event and outputs an event signal, and a grayscale pixel is arranged in a pixel array such that it outputs a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light, and a shielded wiring connected to a predetermined power supply voltage is arranged between a wiring connected to an electrode that receives a logarithmically transformed voltage output from the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel.

[0012] In the second aspect of this disclosure, event pixels that detect when a change in brightness exceeds a predetermined threshold as an event and output an event signal, and grayscale pixels that output a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light are arranged to be mixed in the pixel array, and a shielded wiring connected to a predetermined power supply voltage is arranged between a wiring connected to an electrode that receives the logarithmically transformed voltage output from the event pixels and a vertical signal line that outputs a pixel signal from the grayscale pixels.

[0013] The image sensor in the third aspect of the present disclosure has a first color pixel region having a plurality of pixels of a first color, a second color pixel region having a plurality of pixels of a second color, a third color pixel region having a plurality of pixels of a third color, and a fourth color pixel region having a plurality of pixels of a fourth color, arranged in a 2x2 array in the row direction and column direction. Two different color pixel regions among the first, second, third, and fourth color pixel regions are provided with separate function pixels, which are pixels having a different function from the first, second, third, and fourth color pixels. One separate function pixel is provided across two unit regions, one of which is located in each of the two different color pixel regions, with a unit region corresponding to the size in which two or more pixels of the same color arranged in a row direction are arranged.

[0014] The electronic device of the third aspect of the present disclosure comprises an image sensor in which a first color pixel region having a plurality of pixels of a first color, a second color pixel region having a plurality of pixels of a second color, a third color pixel region having a plurality of pixels of a third color, and a fourth color pixel region having a plurality of pixels of a fourth color are arranged in a 2x2 array in the row direction and column direction, and in two different color pixel regions among the first, second, third, and fourth color pixel regions, there are additional function pixels which are pixels that have a different function from the first color pixels, second color pixels, third color pixels, and fourth color pixels, and one of the additional function pixels is provided spanning two of the unit regions, one of which is arranged in each of the two different color pixel regions, with one unit region corresponding to the size in which two or more pixels of the same color arranged in the row direction are arranged.

[0015] In a third aspect of this disclosure, a first color pixel region having a plurality of pixels of a first color, a second color pixel region having a plurality of pixels of a second color, a third color pixel region having a plurality of pixels of a third color, and a fourth color pixel region having a plurality of pixels of a fourth color are arranged in a 2x2 array in the row direction and column direction, and in two different color pixel regions among the first, second, third, and fourth color pixel regions, there are separate function pixels, which are pixels that have a different function from the pixels of the first, second, third, and fourth colors, and one separate function pixel is provided across two unit regions, one of which is located in each of the two different color pixel regions, with one unit region corresponding to the size in which two or more pixels of the same color arranged in a row direction are arranged.

[0016] Figure 10 shows a modified version of the image sensor. Figure 10 shows a modified version of the image sensor. Figure 2 shows a modified version of the image sensor. Figure 3 shows a modified version of the image sensor. Figure 4 shows a modified version of the image sensor. Figure 7 shows a modified version of the image sensor. Figure 5 shows a modified version of the image sensor. Figure 6 shows a modified version of the image sensor. Figure 10 shows a modified version of the image sensor. Figure 10 shows a modified version of the image sensor. Figure 2 shows a modified version of the image sensor. Figure 3 shows a modified version of the image sensor. Figure 4 shows a modified version of the image sensor. Figure 5 shows a modified version of the image sensor. Figure 6 shows a modified version of the image sensor. Figure 10 shows a modified version of the image sensor. Figure 10 shows a modified version of the image sensor. Figure 2 shows a modified version of the EVS pixel. Figure 3 shows a modified version of the EVS pixel. Figure 4 shows a modified version of the EVS pixel. Figure 5 shows a modified version of the EVS pixel. Figure 6 shows a modified version of the image sensor. Figure 10 shows a modified version of the EVS pixel20 shows a modified version of the EVS pixel. Figure 30 shows a modified version of the EVS pixel. Figure 40 shows a modified version of the EVS pixel. Figure 50 shows a modified version of the EVS pixel. Figure 60 shows a modified version of the EVS pixel. Figure 70 shows a modified version of the EVS pixel. Figure 80 shows a modified version of the EVS pixel. Figure 90 shows a modified version of the EVS pixel. Figure 100 shows a modified version of the EVS pixel. Figure 100 shows a modified version of the E This figure shows an example of use with an image sensor.

[0017] The following describes in detail a specific embodiment of this technology, with reference to the drawings.

[0018] <First Configuration Example of Image Sensor> Figure 1 shows a configuration example of a first embodiment of an image sensor to which this technology is applied.

[0019] The image sensor 11 shown in Figure 1 is configured such that color pixels 12 for capturing a color image composed of RGB and EVS pixels 13 for outputting an event image composed of event data are mixed together in the pixel array. Furthermore, the image sensor 11 is coded in such a way that color pixels 12 of the same color are arranged in pairs of two in the row direction (pairs of two color pixels 12 arranged so that the transfer electrodes shown as triangles are adjacent to each other on the left and right). In this embodiment, one region corresponding to the size in which two color pixels 12 arranged in the row direction are placed is called a unit region, and Figure 1 shows 16 unit regions arranged in a 4x4 array in the row direction and column direction from among the multiple color pixels 12 and EVS pixels 13 arranged in a matrix in the pixel array.

[0020] Each color pixel 12 receives light through a red color filter, light through a blue color filter, and light through a green color filter, respectively, and outputs a red pixel signal, a blue pixel signal, and a green pixel signal, respectively. Hereinafter, a color pixel 12 that outputs a red pixel signal will be referred to as a red pixel 12R, a color pixel 12 that outputs a blue pixel signal will be referred to as a blue pixel 12B, and a color pixel 12 that outputs a green pixel signal will be referred to as a green pixel 12Gr or green pixel 12Gb.

[0021] Generally, the color pixels 12 are arranged in a so-called Bayer array, with four color pixels 12 in a 2x2 arrangement forming one unit, where red pixels 12R or blue pixels 12B are placed on one diagonal and green pixels 12Gr or green pixels 12Gb are placed on the other diagonal. In this Bayer array, the image sensor 11 uses a 4x4 array of 16 unit regions as one unit. Eight red pixels 12R are placed in the 2x2 array of 4 unit regions in the lower left (hereinafter also referred to as the R pixel region as appropriate), six blue pixels 12B are placed in the 2x2 array of 4 unit regions in the upper right (hereinafter also referred to as the B pixel region as appropriate), six green pixels 12Gr are placed in the 2x2 array of 4 unit regions in the lower right (hereinafter also referred to as the Gr pixel region as appropriate), and eight green pixels 12Gb are placed in the 2x2 array of 4 unit regions in the upper left (hereinafter also referred to as the Gb pixel region as appropriate).

[0022] In the image sensor 11, within the 16 unit regions arranged in a 4x4 array as shown in the figure, one EVS pixel 13 is positioned across two unit regions: the lower right unit region of the B pixel region consisting of four unit regions arranged in a 2x2 array in the upper right, and the upper right unit region of the Gr pixel region consisting of four unit regions arranged in a 2x2 array in the lower right.

[0023] In other words, in the image sensor 11, of the B pixel area in the upper right, which is arranged in a 2x2 array with four unit areas, six blue pixels 12B are placed in the upper two unit areas and the lower left unit area, making a total of three unit areas, and half of the EVS pixel 13 is placed in the lower right unit area. Similarly, in the image sensor 11, of the Gr pixel area in the lower right, which is arranged in a 2x2 array with four unit areas, six green pixels 12Gr are placed in the lower two unit areas and the upper left unit area, making a total of three unit areas, and half of the EVS pixel 13 is placed in the upper right unit area. Thus, the image sensor 11 is configured so that half of the EVS pixel 13 is placed in the lower right unit area of ​​the B pixel area and in the upper right unit area of ​​the Gr pixel area.

[0024] Furthermore, in the image sensor 11, the EVS pixel 13 employs a so-called two-transistor type, which is composed of a photoelectric conversion unit 21, a first amplifier transistor 22, and a first logarithmic transistor 23, as shown in the circuit configuration in Figure 2.

[0025] In Figure 1, of the two unit regions where the EVS pixels 13 are provided, the first amplifier transistor 22 is located in the upper unit region (B pixel region), and the first logarithmic transistor 23 is located in the lower unit region (Gr pixel region).

[0026] Here, the image sensor 11 is constructed by stacking wiring layers on a semiconductor substrate on which a photodiode is provided. The wiring layers have a multilayer wiring structure in which various types of wiring (metal layers) are stacked and arranged in multiple layers. Figure 1 shows a portion of the M3 wiring, which corresponds to the third metal layer, and the M2 wiring, which corresponds to the second metal layer, among the multiple layers of wiring.

[0027] In the image sensor 11, for example, the M3 wiring is provided with a VDD wiring 31 that supplies a power supply voltage VDD to the transistors constituting the color pixels 12 and EVS pixels 13, and a VSS wiring 32 that supplies a power supply voltage VSS to the transistors constituting the color pixels 12 and EVS pixels 13.

[0028] The M2 wiring includes a VPD wiring 41 that connects the gate electrode of the first amplifier transistor 22 constituting the EVS pixel 13 to the source of the first logarithmic transistor 23 constituting the EVS pixel 13 (a node VPD for extracting current from the photoelectric conversion unit 21), and a VSL wiring 42 that is a vertical signal line for reading pixel signals from the color pixels 12.

[0029] The image sensor 11 is configured such that a shielded wiring 43 connected to the VDD wiring 31 is provided on the M2 wiring. The shielded wiring 43 is positioned to extend between the VPD wiring 41 and the VSL wiring 42 (in the example shown in Figure 1, it extends vertically together with the VPD wiring 41 and the VSL wiring 42 in the portion where the VPD wiring 41 and the VSL wiring 42 extend vertically side by side).

[0030] On the right side of Figure 1, a schematic cross-section of the wiring layer is shown in the area enclosed by the dashed line in the plan view on the left side of Figure 1, that is, the area in which the VPD wiring 41, VSL wiring 42, and shield wiring 43 are provided along the VDD wiring 31. As shown in this cross-section of the wiring layer, in the M2 wiring, the shield wiring 43 is positioned between the VPD wiring 41 and the VSL wiring 42 and is electrically connected to the VDD wiring 31 via a through electrode.

[0031] As described above, the image sensor 11 is configured such that the VPD wiring 41 connected to the gate electrode of the first amplifier transistor 22 is shielded from the VSL wiring 42 by the shield wiring 43 connected to the VDD wiring 31. As a result, the image sensor 11 can suppress interference between voltage fluctuations when transmitting pixel signals from the VSL wiring 42 to the VPD wiring 41 (transmission to the EVS pixel 13 via capacitive coupling), thereby reducing the likelihood of the EVS pixel 13 falsely detecting the occurrence of an event. Consequently, the image sensor 11 can achieve improved performance as the EVS pixel 13 can accurately detect the occurrence of an event.

[0032] <Second Configuration Example of Image Sensor> Figure 3 is a diagram showing a configuration example of a second embodiment of an image sensor to which this technology is applied. In the image sensor 11A shown in Figure 3, components common to the image sensor 11 in Figure 1 are denoted by the same reference numerals, and their detailed explanations are omitted.

[0033] Similar to the image sensor 11 in Figure 1, the image sensor 11A is configured such that red pixels 12R, blue pixels 12B, green pixels 12Gr, and green pixels 12Gb, and EVS pixels 13a are mixed together in the pixel array. Figure 3 shows 16 unit regions arranged in a 4x4 array in the row and column directions, similar to Figure 1.

[0034] In the image sensor 11A, four red pixels 12R are arranged in the R pixel area, which consists of four unit areas arranged in a 2x2 array in the lower left; four blue pixels 12B are arranged in the B pixel area, which consists of four unit areas arranged in a 2x2 array in the upper right; eight green pixels 12Gr are arranged in the Gr pixel area, which consists of four unit areas arranged in a 2x2 array in the lower right; and eight green pixels 12Gb are arranged in the Gb pixel area, which consists of four unit areas arranged in a 2x2 array in the upper left. Furthermore, in the image sensor 11A, the EVS pixel 13a is arranged across four unit areas: the two rightmost unit areas of the R pixel area, which consists of four unit areas arranged in a 2x2 array in the lower left, and the two leftmost unit areas of the B pixel area, which consists of four unit areas arranged in a 2x2 array in the upper right.

[0035] In other words, in the image sensor 11A, of the R pixel area, which is arranged in a 2x2 array in the lower left and consists of four unit areas, four red pixels 12R are placed in the two unit areas on the left, and half of the EVS pixels 13a are placed in the two unit areas on the right. Similarly, in the image sensor 11A, of the B pixel area, which is arranged in a 2x2 array in the upper right and consists of four unit areas, four blue pixels 12B are placed in the two unit areas on the right, and half of the EVS pixels 13a are placed in the two unit areas on the left. Thus, the image sensor 11A is configured such that half of the EVS pixels 13a are placed in the two unit areas on the right in the R pixel area and in the four unit areas of the two unit areas on the left in the B pixel area.

[0036] Furthermore, in the image sensor 11A, the EVS pixel 13a employs a so-called four-transistor type, which is composed of a photoelectric conversion unit 21, a first amplifier transistor 22, a first logarithmic transistor 23, a second amplifier transistor 24, and a second logarithmic transistor 25, as shown in the circuit configuration in Figure 4.

[0037] In Figure 3, of the four unit regions where the EVS pixels 13a are provided, the first amplifier transistor 22 and the first logarithmic transistor 23 are arranged in the two lower left unit regions (R pixel region), and the second amplifier transistor 24 and the second logarithmic transistor 25 are arranged in the two upper right unit regions (B pixel region). In the image sensor 11A, the photoelectric conversion unit 21 constituting the EVS pixels 13a is divided into two locations so as to be separated into the R pixel region and the B pixel region.

[0038] Here, Figure 3 shows a portion of the M3 and M2 wiring, similar to Figure 1.

[0039] In the image sensor 11A, for example, the M3 wiring is provided with VDD wiring 31 and VDD wiring 33, which supply the power supply voltage VDD to the transistors constituting the color pixel 12 and the EVS pixel 13a, and VSS wiring 32, which supplies the power supply voltage VSS to the transistors constituting the color pixel 12 and the EVS pixel 13a.

[0040] The M2 wiring includes a VPD wiring 41 that connects the gate electrode of the first amplifier transistor 22 constituting the EVS pixel 13a, the source of the first logarithmic transistor 23 constituting the EVS pixel 13a (node ​​VPD for extracting current from the photoelectric conversion unit 21 provided in the R pixel region), and the diffusion layer (node ​​VPD) for extracting current from the photoelectric conversion unit 21 provided in the B pixel region. The M2 wiring also includes a VSL wiring 42, which is a vertical signal line for reading pixel signals from the color pixels 12, and a connection wiring 44 used for connecting the VDD wiring 31 and the transistors. The M2 wiring also includes a D1 wiring 45 that connects the drain (node ​​D1) of the first logarithmic transistor 23 constituting the EVS pixel 13a, the gate electrode of the second amplifier transistor 24 constituting the EVS pixel 13a, and the source (node ​​D1) of the second logarithmic transistor 25 constituting the EVS pixel 13a.

[0041] The image sensor 11A is configured such that a shield wiring 46 connected to the VSS wiring 32 is provided on the M2 wiring. The shield wiring 46 is arranged to extend between the VPD wiring 41 and the VSL wiring 42 (in the example shown in Figure 3, it extends vertically together with the VPD wiring 41 and the VSL wiring 42 in the portion where the VPD wiring 41 and the VSL wiring 42 extend vertically side by side), and also extends between the VSL wiring 42 and the D1 wiring 45 (in the example shown in Figure 3, it extends vertically together with the VSL wiring 42 and the D1 wiring 45 in the portion where the VSL wiring 42 and the D1 wiring 45 extend vertically side by side).

[0042] On the right side of Figure 3, a schematic cross-section of the wiring layer is shown in the area enclosed by the dashed line in the plan view on the left side of Figure 3, that is, the area where the VPD wiring 41, VSL wiring 42, connecting wiring 44, D1 wiring 45, and shield wiring 46 are provided along the VDD wiring 31. As shown in this cross-section of the wiring layer, in the M2 wiring, the shield wiring 46 is positioned between the VPD wiring 41 and the VSL wiring 42, and between the D1 wiring 45 and the VSL wiring 42. The shield wiring 46 is electrically connected to the VSS wiring 32 via a through electrode (not shown), and the connecting wiring 44 is electrically connected to the VDD wiring 31 via a through electrode.

[0043] As described above, the image sensor 11A is configured such that the VPD wiring 41 connected to the gate electrode of the first amplifier transistor 22 and the D1 wiring 45 connected to the gate electrode of the second amplifier transistor 24 are shielded from the VSL wiring 42 by the shield wiring 46 connected to the VSS wiring 32. As a result, the image sensor 11A can suppress interference between voltage fluctuations when transmitting pixel signals from the VSL wiring 42 and the VPD wiring 41 or D1 wiring 45 (transmission to the EVS pixel 13a via capacitive coupling), thereby reducing the likelihood of the EVS pixel 13a falsely detecting the occurrence of an event. Consequently, the image sensor 11A can achieve improved performance as the EVS pixel 13a can accurately detect the occurrence of an event.

[0044] FIG. 5 is a diagram showing a modified example of the image sensor 11A shown in FIG. 3.

[0045] As shown in FIG. 5, the image sensor 11A' is different in configuration from the image sensor 11A of FIG. 3 in that the 4-transistor type (see FIG. 4) EVS pixel 13a' is arranged across two unit regions, namely, the upper right unit region of the R pixel region composed of four unit regions arranged in a 2×2 array at the lower left, and the lower left unit region of the B pixel region composed of four unit regions arranged in a 2×2 array at the upper right.

[0046] That is, in the image sensor 11A', six red pixels 12R are arranged in three unit regions, namely, the lower two unit regions and the upper left unit region, of the R pixel region composed of four unit regions arranged in a 2×2 array at the lower left, and half of the EVS pixel 13a' is arranged in the upper right unit region. Similarly, in the image sensor 11A', six blue pixels 12B are arranged in three unit regions, namely, the upper two unit regions and the lower right unit region, of the B pixel region composed of four unit regions arranged in a 2×2 array at the upper right, and half of the EVS pixel 13a' is arranged in the lower left unit region. Thus, the image sensor 11A' is configured such that half of the EVS pixel 13a' is arranged in each of the upper right unit region in the R pixel region and the lower left unit region in the B pixel region.

[0047] And, in the image sensor 11A', similar to the image sensor 11A of FIG. 3, a shield wiring 46 is provided between the VPD wiring 41 and the VSL wiring 42, and between the VSL wiring 42 and the D1 wiring 45 in the M2 wiring.

[0048] The image sensor 11A' configured as described above can, similar to the image sensor 11A of FIG. 3, reduce the false detection of the occurrence of an event by the EVS pixel 13a', and can improve the image quality of the color image more than the image sensor 11A of FIG. 3. That is, compared with the image sensor 11A of FIG. 3, the image quality of the color image of the image sensor 11A' is improved by the amount corresponding to the increase in the number of red pixels 12R and blue pixels 12B.

[0049] <Third Configuration Example of Image Sensor>FIG. 6 is a diagram showing a configuration example of a third embodiment of an image sensor to which the present technology is applied. In the image sensor 11B shown in FIG. 6, the same reference numerals are given to the configurations common to the image sensor 11 in FIG. 1, and detailed descriptions thereof are omitted.

[0050] Similar to the image sensor 11 in FIG. 1, the image sensor 11B is configured such that red pixels 12R, blue pixels 12B, green pixels 12Gr, and green pixels 12Gb, and EVS pixels 13 are arranged to be mixed in a pixel array portion. Similar to FIG. 1, FIG. 6 shows 16 unit regions arranged in a 4×4 array in the row direction × column direction.

[0051] Also, in the image sensor 11B, the red pixels 12R, blue pixels 12B, green pixels 12Gr, green pixels 12Gb, and EVS pixels 13 are arranged in the same manner as the image sensor 11 in FIG. 1. Therefore, in the image sensor 11B, the 2-transistor type (see FIG. 2) EVS pixels 13 as described above are provided across two unit regions, namely, the lower right unit region of the B pixel region composed of 4 unit regions arranged in a 2×2 array in the upper right, and the upper right unit region of the Gr pixel region composed of 4 unit regions arranged in a 2×2 array in the lower right, and thus the image sensor 11B is configured in the same manner as the image sensor 11 in FIG. 1.

[0052] And in the image sensor 11B, for example, on the M3 wiring, there are provided a VDD wiring 31 for supplying the power supply voltage VDD to the transistors constituting the color pixels 12, a VDDEVSS wiring 34 for supplying the power supply voltage VDD to the transistors constituting the EVS pixels 13, and VSSEVS wirings 35 and 36 for supplying the power supply voltage VSS to the transistors constituting the EVS pixels 13.

[0053] The M2 wiring is provided with a VPD wiring 41 that connects the gate electrode of the first amplifier transistor 22 constituting the EVS pixel 13 to the source (node ​​VPD for extracting current from the photoelectric conversion unit 21) of the first logarithmic transistor 23 constituting the EVS pixel 13, and a connecting wiring 44 used for connecting the VDD wiring 31 to the transistor.

[0054] The image sensor 11B is configured such that a shielded wire 47 connected to the VSSEVS wiring 36 is provided on the M2 wiring. The shielded wire 47 is positioned to extend between the VPD wiring 41 and the connecting wiring 44 (in the example shown in Figure 6, it extends vertically together with the VPD wiring 41 and the connecting wiring 44 in the portion where the VPD wiring 41 and the connecting wiring 44 extend vertically side by side).

[0055] On the right side of Figure 6, a schematic cross-section of the wiring layer is shown in the area enclosed by the dashed line in the plan view on the left side of Figure 6, that is, the area where the VPD wiring 41, connecting wiring 44, and shield wiring 47 are provided along the VDD wiring 31 and VSSEVS wiring 36. As shown in this cross-section of the wiring layer, in the M2 wiring, the shield wiring 47 is positioned between the VPD wiring 41 and the connecting wiring 44 and is electrically connected to the VSSEVS wiring 36 via a through electrode.

[0056] As described above, the image sensor 11B has separate power supply wiring for CIS and power supply wiring for EVS, and the VPD wiring 41 connected to the gate electrode of the first amplifier transistor 22 is shielded from the connecting wiring 44 connected to the VDD wiring 31 by the shield wiring 47 connected to the VSSEVS wiring 36. As a result, the image sensor 11B can suppress voltage fluctuations occurring in the power supply voltage VDD from interfering with the VPD wiring 41 from the connecting wiring 44 (transmitted to the EVS pixel 13 by capacitive coupling), and can reduce the chance of the EVS pixel 13 falsely detecting the occurrence of an event. Therefore, the image sensor 11B can achieve improved performance as the EVS pixel 13 can accurately detect the occurrence of an event.

[0057] <Fourth Configuration Example of Image Sensor> Figure 7 shows a configuration example of a fourth embodiment of an image sensor to which this technology is applied. In the image sensor 11C shown in Figure 7, components common to the image sensor 11 in Figure 1 and the image sensor 11A in Figure 3 are denoted by the same reference numerals, and their detailed descriptions are omitted.

[0058] Similar to the image sensor 11 in Figure 1, the image sensor 11C is configured such that red pixels 12R, blue pixels 12B, green pixels 12Gr, and green pixels 12Gb, and EVS pixels 13a are mixed together in the pixel array. Figure 7 shows 16 unit regions arranged in a 4x4 array in the row and column directions, similar to Figure 1.

[0059] Furthermore, in the image sensor 11C, the red pixels 12R, blue pixels 12B, green pixels 12Gr, green pixels 12Gb, and EVS pixels 13a are arranged in the same way as in the image sensor 11A in Figure 3. Therefore, the image sensor 11C is configured in the same way as the image sensor 11A in Figure 3, in that the four-transistor type (see Figure 4) EVS pixels 13a described above are arranged across four unit regions: the two rightmost unit regions of the R pixel region, which consists of four unit regions arranged in a 2x2 array in the lower left, and the two leftmost unit regions of the B pixel region, which consists of four unit regions arranged in a 2x2 array in the upper right. In other words, in the image sensor 11C, the photoelectric conversion unit 21 that constitutes the EVS pixels 13a is provided in two locations, divided into the R pixel region and the B pixel region.

[0060] In the image sensor 11C, for example, the M3 wiring is provided with a VDD wiring 31 for supplying a power supply voltage VDD to the transistors constituting the color pixels 12, a VDDEVS wiring 34 for supplying a power supply voltage VDD to the transistors constituting the EVS pixels 13a, and a VSSEVS wiring 35 for supplying a power supply voltage VSS to the transistors constituting the EVS pixels 13a.

[0061] The M2 wiring includes a VPD wiring 41 that connects the gate electrode of the first amplifier transistor 22 constituting the EVS pixel 13a, the source of the first logarithmic transistor 23 constituting the EVS pixel 13a (node ​​VPD for extracting current from the photoelectric conversion unit 21 provided in the R pixel region), and the diffusion layer (node ​​VPD) for extracting current from the photoelectric conversion unit 21 provided in the B pixel region. The M2 wiring also includes a VSL wiring 42, which is a vertical signal line for reading pixel signals from the color pixels 12, and a connection wiring 44 used for connecting the VDD wiring 31 and the transistors. The M2 wiring also includes a D1 wiring 45 that connects the drain (node ​​D1) of the first logarithmic transistor 23 constituting the EVS pixel 13a, the gate electrode of the second amplifier transistor 24 constituting the EVS pixel 13a, and the source (node ​​D1) of the second logarithmic transistor 25 constituting the EVS pixel 13a.

[0062] The image sensor 11C is configured with a shield wire 46 connected to the VSSEVS wiring 35 and a shield wire 48 (not shown in the left-hand plan view of Figure 7) connected to the VSSEVS wiring 35, provided on the M2 wiring. The shield wire 46 is positioned to extend between the VPD wiring 41 and the VSL wiring 42 (in the example shown in Figure 7, it extends vertically together with the VPD wiring 41 and the VSL wiring 42 in the portion where the VPD wiring 41 and the VSL wiring 42 extend vertically side by side), and also to extend between the VSL wiring 42 and the D1 wiring 45 (in the example shown in Figure 7, it extends vertically together with the VSL wiring 42 and the D1 wiring 45 in the portion where the VSL wiring 42 and the D1 wiring 45 extend vertically side by side). The shield wire 48 is positioned to extend between the VPD wiring 41 and the connecting wiring 44.

[0063] On the right side of Figure 7, a schematic cross-section of the wiring layer is shown in the area enclosed by the dashed line in the plan view on the left side of Figure 7, that is, the area where the VPD wiring 41, VSL wiring 42, connecting wiring 44, D1 wiring 45, shield wiring 46, and shield wiring 48 are provided along the VDD wiring 31 and VSSEVS wiring 35. As shown in this cross-section of the wiring layer, in the M2 wiring, the shield wiring 46 is positioned between the VPD wiring 41 and the VSL wiring 42, and between the D1 wiring 45 and the VSL wiring 42, and the shield wiring 48 is positioned between the VPD wiring 41 and the connecting wiring 44. The connecting wiring 44 is electrically connected to the VDD wiring 31 via a through electrode, and the shield wiring 46 and shield wiring 48 are electrically connected to the VSSEVS wiring 35 via a through electrode.

[0064] The image sensor 11C configured as described above has separate power supply wiring for CIS and power supply wiring for EVS. The VPD wiring 41 connected to the gate electrode of the first amplifier transistor 22 is shielded from the VSL wiring 42 by the shield wiring 46 connected to the VSSEVS wiring 35, and is also shielded from the connecting wiring 44 connected to the VDD wiring 31 by the shield wiring 48 connected to the VSSEVS wiring 35. Furthermore, the image sensor 11C is configured such that the D1 wiring 45 connected to the gate electrode of the second amplifier transistor 24 is shielded from the VSL wiring 42 by the shield wiring 46 connected to the VSSEVS wiring 35.

[0065] As a result, the image sensor 11C can suppress interference between the VSL wiring 42 and the VPD wiring 41 or D1 wiring 45 due to voltage fluctuations when transmitting pixel signals, and also suppress interference between the power supply voltage VDD and the VPD wiring 41 due to voltage fluctuations from the connection wiring 44, thereby reducing the likelihood of the EVS pixel 13a falsely detecting the occurrence of an event. Consequently, the image sensor 11C can achieve improved performance as the EVS pixel 13a can accurately detect the occurrence of an event.

[0066] Figure 8 shows a modified example of the image sensor 11C shown in Figure 7.

[0067] As shown in Figure 8, the image sensor 11C' differs from the image sensor 11C in Figure 7 in that the four-transistor type (see Figure 4) EVS pixels 13a' described above are arranged across two unit areas: the upper right unit area of ​​the R pixel area, which consists of four unit areas arranged in a 2x2 array in the lower left, and the lower left unit area of ​​the B pixel area, which consists of four unit areas arranged in a 2x2 array in the upper right.

[0068] Specifically, in the image sensor 11C', six red pixels 12R are arranged in three unit areas (the two lower unit areas and the one upper left unit area) of the R pixel area, which consists of four unit areas arranged in a 2x2 array in the lower left, and half of the EVS pixel 13a' is arranged in the one upper right unit area. Similarly, in the image sensor 11C', six blue pixels 12B are arranged in three unit areas (the two upper unit areas and the one lower right unit area) of the B pixel area, which consists of four unit areas arranged in a 2x2 array in the upper right, and half of the EVS pixel 13a' is arranged in the one lower left unit area. Thus, the image sensor 11C' is configured such that half of the EVS pixel 13a' is arranged in the one upper right unit area of ​​the R pixel area and half in the one lower left unit area of ​​the B pixel area.

[0069] In the image sensor 11C', similar to the image sensor 11C in Figure 7, a shield wire 46 is provided between the VPD wire 41 and the D1 wire 45 and the VSL wire 42 in the M2 wiring, and a shield wire 48 is provided between the VPD wire 41 and the connecting wire 44.

[0070] The image sensor 11C' configured in this way can reduce false detection of events by the EVS pixels 13a', similar to the image sensor 11C in Figure 7, and can also improve the image quality of color images compared to the image sensor 11C in Figure 7. Specifically, the image sensor 11C' improves the image quality of color images by the amount by which the number of red pixels 12R and blue pixels 12B has increased compared to the image sensor 11C in Figure 7.

[0071] <Fifth Configuration Example of Image Sensor> Figure 9 shows a configuration example of a fifth embodiment of an image sensor to which this technology is applied. In the image sensor 11D shown in Figure 9, components common to the image sensor 11 in Figure 1 are denoted by the same reference numerals, and their detailed explanations are omitted.

[0072] Similar to the image sensor 11 in Figure 1, the image sensor 11D is configured such that red pixels 12R, blue pixels 12B, green pixels 12Gr, and green pixels 12Gb, along with EVS pixels 13, are mixed together in the pixel array. Figure 9 shows 16 unit regions arranged in a 4x4 array in the row and column directions, similar to Figure 1.

[0073] Furthermore, in the image sensor 11D, the red pixels 12R, blue pixels 12B, green pixels 12Gr, green pixels 12Gb, and EVS pixels 13 are arranged in the same way as in the image sensor 11 of Figure 1. Therefore, the image sensor 11D is configured in the same way as the image sensor 11 of Figure 1 in that the two-transistor type (see Figure 2) EVS pixels 13 described above are provided across two unit areas: one unit area on the lower right of the B pixel area consisting of four unit areas arranged in a 2x2 array in the upper right, and one unit area on the upper right of the Gr pixel area consisting of four unit areas arranged in a 2x2 array in the lower right.

[0074] In Figure 9, a portion of the M8 wiring, which corresponds to the 8th metal layer, and the M7 wiring, which corresponds to the 7th metal layer, are shown, which are part of the multiple layers of wiring (metal layers) arranged in a multilayer wiring structure within the wiring layer.

[0075] In the image sensor 11D, for example, the M8 wiring is provided with a VPR electrode 51 that receives the logarithmically converted voltage output from the EVS pixel 13, and a connecting wire 52 (not shown in the left-hand plan view of Figure 9) used to connect the VDD wiring 65 and the transistor.

[0076] The M7 wiring includes VSL wiring 61 to VSL wiring 64, which are vertical signal lines for reading pixel signals from the color pixels 12; VDD wiring 65 and VDD wiring 66, which supply the power supply voltage VDD to the transistors constituting the color pixels 12 and EVS pixels 13; and connection wiring 67 (not shown in the left-hand plan view of Figure 9), which is used to connect the VPR electrode 51 and the EVS pixels 13.

[0077] On the right side of Figure 9, a schematic cross-section of the wiring layer is shown in the area enclosed by the dashed line in the plan view on the left side of Figure 9, that is, the area in which the VPR electrode 51, connecting wiring 52, VSL wiring 61, VSL wiring 62, VDD wiring 65, and connecting wiring 67 are provided in the horizontal direction. As shown in this cross-section of the wiring layer, in the M7 wiring, the VDD wiring 65 is positioned between the VSL wiring 61 and VSL wiring 62 and the connecting wiring 67.

[0078] As described above, the image sensor 11D is configured such that the VSL wiring 61 and VSL wiring 62 are shielded by the VDD wiring 65 from the connecting wiring 67 connected to the VPR electrode 51. This allows the image sensor 11D to suppress interference (transmission to the color pixel 12 via capacitive coupling) between the voltage fluctuations caused by the voltage output from the EVS pixel 13 and the VSL wiring 61 and VSL wiring 62 via the connecting wiring 67 connected to the VPR electrode 51, thereby reducing the generation of noise in the pixel signal output from the color pixel 12. Consequently, the image sensor 11D can transmit a pixel signal with suppressed noise through the VSL wiring 61 and VSL wiring 62, resulting in higher image quality and improved performance.

[0079] <Sixth Configuration Example of Image Sensor> Figure 10 shows a configuration example of a sixth embodiment of an image sensor to which this technology is applied. In the image sensor 11E shown in Figure 10, components common to the image sensor 11 in Figure 1, the image sensor 11A in Figure 3, and the image sensor 11D in Figure 9 are denoted by the same reference numerals, and their detailed descriptions are omitted.

[0080] Similar to the image sensor 11 in Figure 1, the image sensor 11E is configured such that red pixels 12R, blue pixels 12B, green pixels 12Gr, and green pixels 12Gb, along with EVS pixels 13a, are mixed together in the pixel array. Figure 10 shows 16 unit regions arranged in a 4x4 array in the row and column directions, similar to Figure 1.

[0081] Furthermore, in the image sensor 11E, the red pixels 12R, blue pixels 12B, green pixels 12Gr, green pixels 12Gb, and EVS pixels 13a are arranged in the same way as in the image sensor 11A in Figure 3. Therefore, the image sensor 11E is configured in the same way as the image sensor 11A in Figure 3, in that the four-transistor type (see Figure 4) EVS pixels 13a described above are arranged across four unit regions: the two rightmost unit regions of the R pixel region, which consists of four unit regions arranged in a 2x2 array in the lower left, and the two leftmost unit regions of the B pixel region, which consists of four unit regions arranged in a 2x2 array in the upper right. In other words, in the image sensor 11E, the photoelectric conversion unit 21 constituting the EVS pixels 13a is provided in two locations, divided into the R pixel region and the B pixel region.

[0082] In the image sensor 11E, similar to the image sensor 11D in Figure 9, the M8 wiring is provided with a VPR electrode 51 that receives the logarithmically converted voltage output from the EVS pixel 13a, and a connecting wire 52 (not shown in the left-hand plan view of Figure 10) used to connect the VDD wiring 63 and the transistor. The M7 wiring is provided with VSL wirings 61 to 64, which are vertical signal lines for reading pixel signals from the color pixel 12, VDD wirings 65 and VDD wirings 66 that supply the power supply voltage VDD to the transistors constituting the color pixel 12 and the EVS pixel 13a, and a connecting wire 67 (not shown in the left-hand plan view of Figure 10) used to connect the VPR electrode 51 and the EVS pixel 13a.

[0083] On the right side of Figure 10, a schematic cross-section of the wiring layer is shown, similar to Figure 9. As shown in this cross-section of the wiring layer, in the M7 wiring, the VDD wiring 65 is positioned between the VSL wiring 61 and VSL wiring 62 and the connecting wiring 67. In other words, the VSL wiring 61 and VSL wiring 62 are shielded by the VDD wiring 65 from the connecting wiring 67 that is connected to the VPR electrode 51.

[0084] The image sensor 11E configured in this way, like the image sensor 11D in Figure 9, can reduce the generation of noise in the pixel signal output from the color pixel 12. Therefore, the image sensor 11E can transmit the pixel signal with suppressed noise generation via the VSL wiring 61 and VSL wiring 62, resulting in higher image quality and further performance improvement.

[0085] Figure 11 shows a modified example of the image sensor 11E shown in Figure 10.

[0086] As shown in Figure 11, the image sensor 11E' differs from the image sensor 11E in Figure 10 in that the four-transistor type (see Figure 4) EVS pixels 13a' described above are arranged across two unit areas: the upper right unit area of ​​the R pixel area, which consists of four unit areas arranged in a 2x2 array in the lower left, and the lower left unit area of ​​the B pixel area, which consists of four unit areas arranged in a 2x2 array in the upper right.

[0087] Specifically, in the image sensor 11E', six red pixels 12R are arranged in three unit areas (the lower two unit areas and the upper left unit area) of the R pixel area, which consists of four unit areas arranged in a 2x2 array in the lower left, and half of the EVS pixel 13a' is arranged in the upper right unit area. Similarly, in the image sensor 11E', six blue pixels 12B are arranged in three unit areas (the upper two unit areas and the lower right unit area) of the B pixel area, which consists of four unit areas arranged in a 2x2 array in the upper right, and half of the EVS pixel 13a' is arranged in the lower left unit area. In other words, in the image sensor 11E', the photoelectric conversion unit 21 that constitutes the EVS pixel 13a' is provided in two locations, divided into the R pixel area and the B pixel area.

[0088] In the image sensor 11E', similar to the image sensor 11E in Figure 10, the VDD wiring 65 is positioned between the VSL wiring 61 and VSL wiring 62 and the connecting wiring 67 in the M7 wiring. In other words, the VSL wiring 61 and VSL wiring 62 are shielded by the VDD wiring 65 from the connecting wiring 67 connected to the VPR electrode 51.

[0089] The image sensor 11E' configured in this way can reduce noise generation in the pixel signal output from the color pixels 12, similar to the image sensor 11E in Figure 10, and can also improve the image quality of color images compared to the image sensor 11E in Figure 10. In other words, the image sensor 11E' improves the image quality of color images by the amount by which the number of red pixels 12R and blue pixels 12B has increased compared to the image sensor 11E in Figure 10.

[0090] <Variations of EVS Pixel 13> The image sensor 11 of each embodiment described above can employ EVS pixels 13 with circuit configurations other than the 2-transistor type EVS pixel 13 shown in Figure 2, or the 4-transistor type EVS pixel 13a shown in Figure 4.

[0091] For example, the image sensor 11 may employ a circuit configuration consisting of a photoelectric conversion unit 21, a first amplifier transistor 22, a first logarithmic transistor 23, and a capacitor 26 provided on the pixel chip side, as shown in the two-transistor type EVS pixel 13b in Figure 12, and a load MOS (Metal Oxide Semiconductor) 27 provided on the logic chip side.

[0092] Alternatively, the image sensor 11 may employ a circuit configuration in which the first logarithmic transistor 23 is diode-connected, as shown in Figure 13, consisting of a photoelectric conversion unit 21, a first amplifier transistor 22, a first logarithmic transistor 23, a second logarithmic transistor 25, and a capacitor 26 provided on the pixel chip side, and a load MOS 27 provided on the logic chip side.

[0093] Alternatively, the image sensor 11 may employ a circuit configuration in which the first logarithmic transistor 23 and the second logarithmic transistor 25 are diode-connected, as shown in Figure 14, such as the two-stage diode type EVS pixel 13d, and consist of a photoelectric conversion unit 21, a first amplifier transistor 22, a first logarithmic transistor 23, a second logarithmic transistor 25, a capacitor 26, and a third logarithmic transistor 28 provided on the pixel chip side, and a load MOS 27 provided on the logic chip side, and the first logarithmic transistor 23 and the second logarithmic transistor 25 are diode-connected.

[0094] In addition, the image sensor 11 can employ a more multi-stage circuit configuration (for example, a 6-transistor type) or a diode-type circuit configuration with three or more stages as the EVS pixel 13.

[0095] As described above, the image sensor 11 in each of the above configuration examples can achieve improved performance by reducing false detection of events and reducing noise in the pixel signal.

[0096] <Pixel Layout of Color Pixels and EVS Pixels> The pixel layout of color pixels 12 and EVS pixels 13 will be described with reference to Figures 15 and 16.

[0097] In the first pixel layout shown in Figure 15A, eight red pixels 12R are arranged in the R pixel region, which consists of four 2x2 unit regions in the upper left, and eight green pixels 12Gb are arranged in the Gb pixel region, which consists of four 2x2 unit regions in the lower left. Then, in the B pixel region, which consists of four 2x2 unit regions in the lower right, six blue pixels 12B are arranged in three unit regions (the lower two and the upper left), and half of an EVS pixel 13 is arranged in the upper right unit region. Similarly, in the Gr pixel region, which consists of four 2x2 unit regions in the upper right, six green pixels 12Gr are arranged in three unit regions (the upper two and the lower left), and half of an EVS pixel 13 is arranged in the lower right unit region.

[0098] In other words, in the first pixel layout, one EVS pixel 13 is provided so as to span two unit regions: one located on the upper right side of the B pixel region and another located on the lower right side of the Gr pixel region. Furthermore, the unit regions of the B pixel region and the Gr pixel region where the EVS pixel 13 is located are adjacent to each other on their edges.

[0099] In the second pixel layout shown in Figure 15B, eight green pixels 12Gr are placed in the Gr pixel region, which consists of four 2x2 unit regions in the upper right, and eight green pixels 12Gb are placed in the Gb pixel region, which consists of four 2x2 unit regions in the lower left. Then, in the R pixel region, which consists of four 2x2 unit regions in the upper left, six red pixels 12R are placed in three unit regions (the upper two and the lower left one), and half of an EVS pixel 13 is placed in the lower right unit region. Similarly, in the B pixel region, which consists of four 2x2 unit regions in the lower right, six blue pixels 12B are placed in three unit regions (the lower two and the upper right one), and half of an EVS pixel 13 is placed in the upper left unit region.

[0100] In other words, in the second pixel layout, one EVS pixel 13 is provided so as to span two unit regions: one located on the lower right side of the R pixel region and another located on the upper left side of the B pixel region. Furthermore, the unit regions of the R pixel region and the B pixel region where the EVS pixel 13 is located are adjacent to each other at their corners.

[0101] In the third pixel layout shown in Figure 15C, eight green pixels 12Gr are arranged in the Gr pixel region, which consists of four 2x2 unit regions in the upper right, and eight green pixels 12Gb are arranged in the Gb pixel region, which consists of four 2x2 unit regions in the lower left. Then, in the R pixel region, which consists of four 2x2 unit regions in the upper left, six red pixels 12R are arranged in three unit regions (the upper two and the lower left one), and half of an EVS pixel 13 is arranged in the lower right unit region. Similarly, in the B pixel region, which consists of four 2x2 unit regions in the lower right, six blue pixels 12B are arranged in three unit regions (the upper two and the lower left one), and half of an EVS pixel 13 is arranged in the lower right unit region.

[0102] In other words, in the third pixel layout, one EVS pixel 13 is provided so as to span two unit regions: one located on the lower right side of the R pixel region and another located on the lower right side of the B pixel region.

[0103] In the fourth pixel layout shown in Figure 16A, eight blue pixels 12B are arranged in the B pixel region, which consists of four 2x2 unit regions in the lower right, and eight green pixels 12Gb are arranged in the Gb pixel region, which consists of four 2x2 unit regions in the lower left. Then, in the R pixel region, which consists of four 2x2 unit regions in the upper left, six red pixels 12R are arranged in three unit regions (the upper two and the lower left one), and half of an EVS pixel 13 is arranged in the lower right unit region. Similarly, in the Gr pixel region, which consists of four 2x2 unit regions in the upper right, six green pixels 12Gr are arranged in three unit regions (the upper two and the lower right one), and half of an EVS pixel 13 is arranged in the lower left unit region.

[0104] In other words, in the fourth pixel layout, one EVS pixel 13 is provided so as to span two unit regions: one located on the lower right side of the R pixel region and another located on the lower left side of the Gr pixel region. Furthermore, the unit regions of the R pixel region and the Gr pixel region where the EVS pixel 13 is located are adjacent to each other on their edges.

[0105] In the fifth pixel layout shown in Figure 16B, eight red pixels 12R are arranged in the R pixel region, which consists of four 2x2 unit regions in the upper left, and eight blue pixels 12B are arranged in the B pixel region, which consists of four 2x2 unit regions in the lower right. Then, in the Gb pixel region, which consists of four 2x2 unit regions in the lower left, six green pixels 12Gb are arranged in three unit regions (the two lower regions and the one upper right region), and half of an EVS pixel 13 is arranged in the one upper left unit region. Similarly, in the Gr pixel region, which consists of four 2x2 unit regions in the upper right, six green pixels 12Gr are arranged in three unit regions (the two upper regions and the one lower right region), and half of an EVS pixel 13 is arranged in the one lower left unit region.

[0106] In other words, in the fifth pixel layout, one EVS pixel 13 is provided so as to span two unit regions: a unit region provided on the upper left side of the Gb pixel region and a unit region provided on the lower left side of the Gr pixel region.

[0107] In the sixth pixel layout shown in Figure 16C, eight red pixels 12R are arranged in the R pixel region, which consists of four 2x2 unit regions in the upper left, and eight blue pixels 12B are arranged in the B pixel region, which consists of four 2x2 unit regions in the lower right. Then, in the Gb pixel region, which consists of four 2x2 unit regions in the lower left, six green pixels 12Gb are arranged in three unit regions (the two lower ones and the one upper left one), and half of an EVS pixel 13 is arranged in the one upper right unit region. Similarly, in the Gr pixel region, which consists of four 2x2 unit regions in the upper right, six green pixels 12Gr are arranged in three unit regions (the two upper ones and the one lower right one), and half of an EVS pixel 13 is arranged in the one lower left unit region.

[0108] In other words, in the sixth pixel layout, one EVS pixel 13 is provided so as to span two unit regions: one located on the upper right side of the Gb pixel region and another located on the lower left side of the Gr pixel region. Furthermore, the unit regions of the Gb pixel region and the Gr pixel region where the EVS pixel 13 is located are adjacent to each other at their corners.

[0109] Referring to Figures 17 and 18, examples of configurations for EVS pixels 13 provided across two unit regions adjacent to each other by their edges, and examples of configurations for EVS pixels 13 provided across two unit regions adjacent to each other by their corners will be described.

[0110] Figure 17 shows examples of EVS pixel configurations where the EVS pixels 13 are provided across two unit regions adjacent to each other by their edges, such as the first pixel layout shown in Figure 15A and the fourth pixel layout shown in Figure 16A. Figure 18 shows examples of EVS pixel configurations where the EVS pixels 13 are provided across two unit regions adjacent to each other by their corners, such as the second pixel layout shown in Figure 15B and the sixth pixel layout shown in Figure 16C.

[0111] For example, if the EVS pixels 13 are provided across two unit regions that are adjacent to each other by their edges, the photoelectric conversion unit 21 is provided in one location so as to be continuous with the two unit regions. In contrast, if the EVS pixels 13 are provided across two unit regions that are adjacent to each other by their corners, the photoelectric conversion unit 21 is provided in two locations so as to divide the unit region into two.

[0112] Therefore, as shown in the circuit configuration A of Figure 17, when the EVS pixels 13 are provided across two unit regions that are adjacent to each other by their edges, only one photoelectric conversion unit 21 is provided. In contrast, as shown in the circuit configuration A of Figure 18, when the EVS pixels 13 are provided across two unit regions that are adjacent to each other by their corners, two photoelectric conversion units 21-1 and 21-2 are provided as the photoelectric conversion unit 21.

[0113] Furthermore, as shown in the plan view in Figure 17B, when the EVS pixels 13 are provided across two unit regions adjacent to each other by their edges, the first amplifier transistor 22 and the first logarithmic transistor 23 are arranged in the region where the photoelectric conversion unit 21 is provided. Therefore, as shown in the cross-sectional view in Figure 17C (the A-B cross-section in Figure 17B), only one node VPD is needed to extract current from the photoelectric conversion unit 21, and the source of the first logarithmic transistor 23 becomes the node VPD.

[0114] In contrast, as shown in the plan view in Figure 17B, when the EVS pixels 13 are provided across two unit regions adjacent to each other at their corners, for example, the first logarithmic transistor 23 is provided in the region where the photoelectric conversion unit 21-1 is provided, and the first amplifier transistor 22 is provided in the region where the photoelectric conversion unit 21-2 is provided. Therefore, as shown in the cross-sectional view in Figure 18C (the A-B cross-section shown in Figure 18B), two nodes VPD-1 and VPD-2 for extracting current from the photoelectric conversion unit 21 are provided in the photoelectric conversion unit 21-1 and the photoelectric conversion unit 21-2, respectively. The source of the first logarithmic transistor 23 becomes node VPD-1 for extracting current from the photoelectric conversion unit 21-1, and node VPD-2 for extracting current from the photoelectric conversion unit 21-2 is connected to the source (node ​​VPD-1) of the first logarithmic transistor 23 via wiring.

[0115] Thus, when the EVS pixels 13 span across two unit regions adjacent to each other by their edges, the photoelectric conversion unit 21 can be provided in one location, and a structure can be adopted in which the photoelectric conversion unit 21 is directly connected to the source of the first logarithmic transistor 23. Also, when the EVS pixels 13 span across two unit regions adjacent to each other by their corners, the photoelectric conversion unit 21 will be provided in two locations, and a structure can be adopted in which the respective node VPDs are connected by wiring.

[0116] Furthermore, even when the two unit regions on which the EVS pixels 13 are arranged are not adjacent, as in the third pixel layout shown in Figure 15C and the fifth pixel layout shown in Figure 16B, the node VPD-2 for extracting current from the photoelectric conversion unit 21-2 can be connected via wiring to the source (node ​​VPD-1) of the first logarithmic transistor 23, similar to the case where the EVS pixels 13 are provided spanning two unit regions that are adjacent to each other at their corners.

[0117] In the image sensor 11 configured as described above, the locations where EVS pixels 13 are placed will be treated as defective pixels in the color image. Therefore, by adopting the first to sixth pixel layouts, the image quality will be less affected by interpolation of these defective pixels. In other words, the first to sixth pixel layouts can suppress the degradation of image quality (for example, the occurrence of false colors or darkening of edges) caused by mixing EVS pixels 13 with color pixels 12.

[0118] In other words, the image sensor 11 has a configuration in which EVS pixels 13 are provided across two unit areas, one for each of two different colored pixel areas from the R pixel area, B pixel area, Gr pixel area, and Gb pixel area. This configuration suppresses the degradation of color image quality and improves performance.

[0119] In addition, in the image sensor 11 of each embodiment described above, a configuration may be adopted in which pixels with functions other than those of the color pixels 12 are arranged instead of the EVS pixels 13, or pixels in which a transparent layer that transmits light of all colors is provided in the color filter layer (so-called White pixels). Of course, the sensitivity of the EVS pixels 13 can be maximized by providing a transparent layer in the color filter layer in which the color filters of each color of the color pixels 12 are provided.

[0120] Furthermore, in the image sensor 11 of each embodiment described above, at least one of the two unit regions on which the EVS pixels 13 are provided is located in the B pixel region. That is, since blue has little impact on image quality among the colors of the color pixels 12, by placing at least one of the two unit regions on which the EVS pixels 13 are provided in the B pixel region, the deterioration of the image quality of the color image can be suppressed.

[0121] Furthermore, the image sensor 11 in each of the above embodiments can be a stacked type in which three semiconductor substrates 71-1 to 71-3 are stacked, as shown in Figure 19.

[0122] The semiconductor substrate 71-1 is provided with photodiodes and pixel transistors that constitute the color pixels 12 and EVS pixels 13. The semiconductor substrate 71-2 is provided with an event signal signal processing circuit that performs signal processing on the event signals output from the EVS pixels 13. The semiconductor substrate 71-3 is provided with a pixel signal signal processing circuit that performs signal processing on the pixel signals output from the color pixels 12.

[0123] The stacked image sensor 11 is constructed by electrically and mechanically connecting semiconductor substrates 71-1 to 71-3 using Cu-Cu junctions, TSVs (Through-Silicon Vias), and the like.

[0124] The stacked image sensor 11 configured as described above allows for miniaturization of the chip size and enables the inclusion of a generous number of circuit components, thereby improving image quality. In other words, in a stacked image sensor 11 that can be miniaturized and improve image quality, further performance can be achieved by arranging the color pixels 12 and EVS pixels 13 in the pixel layout described above.

[0125] In the image sensor 11 of this embodiment described above, the unit region was defined as an area where two color pixels 12 of the same color arranged in the row direction are located. However, for example, an area where two or more color pixels 12 of the same color arranged in the row direction are located may be defined as a unit region.

[0126] Furthermore, this technology can be applied to an image sensor 11 in which color pixels 12 and EVS pixels 13 are arranged in a mixed manner in the pixel array, or, for example, to an image sensor 11 in which grayscale pixels that output a brightness signal of grayscale levels corresponding to the amount of incident light and EVS pixels 13 are arranged in a mixed manner in the pixel array.

[0127] Furthermore, this technology is not limited to configurations in which the shielded wiring is connected to the power supply voltage VDD or VSS; it can be applied to configurations in which the shielded wiring is connected to any power supply voltage, as long as the effects of the shielded wiring described above can be obtained.

[0128] <Example of Electronic Device Configuration> The image sensor 11 described above can be applied to various electronic devices such as imaging systems like digital still cameras and digital video cameras, mobile phones equipped with imaging functions, or other devices equipped with imaging functions.

[0129] Figure 20 is a block diagram showing an example configuration of an imaging device mounted on an electronic device.

[0130] As shown in Figure 20, the imaging device 101 is configured to include an optical system 102, an image sensor 103, a signal processing circuit 104, a monitor 105, and a memory 106, and is capable of capturing still images and moving images.

[0131] The optical system 102 is composed of one or more lenses and guides the image light (incident light) from the subject to the image sensor 103, forming an image on the light-receiving surface (sensor part) of the image sensor 103.

[0132] The image sensor 103 is the same as the image sensor 11 described above. Electrons are accumulated in the image sensor 103 for a certain period of time, depending on the image formed on the light-receiving surface via the optical system 102. Then, a signal corresponding to the electrons accumulated in the image sensor 103 is supplied to the signal processing circuit 104.

[0133] The signal processing circuit 104 performs various signal processing operations on the pixel signals output from the image sensor 103. The image (image data) obtained by the signal processing circuit 104 is supplied to the monitor 105 for display or supplied to the memory 106 for storage (recording).

[0134] In the imaging device 101 configured in this way, performance can be further improved, for example, by applying the image sensor 11 described above.

[0135] <Example of Image Sensor Usage> Figure 21 shows an example of using the image sensor (image sensor 11) described above.

[0136] The image sensor described above can be used in various cases to sense light such as visible light, infrared light, ultraviolet light, and X-rays, for example, as follows.

[0137] - Devices that capture images for viewing purposes, such as digital cameras and portable devices with camera functions. - Devices used for traffic purposes, such as in-vehicle sensors that capture images of the front, rear, surroundings, and interior of a vehicle for safe driving such as automatic stopping and recognition of the driver's condition, surveillance cameras that monitor moving vehicles and roads, and distance measuring sensors that measure distances between vehicles. - Devices used in home appliances such as TVs, refrigerators, and air conditioners that capture user gestures and allow device operation according to those gestures. - Devices used for medical and healthcare purposes, such as endoscopes and devices that perform angiography using infrared light reception. - Devices used for security purposes, such as surveillance cameras for crime prevention and cameras for person recognition. - Devices used for beauty purposes, such as skin measuring devices that capture images of skin and microscopes that capture images of the scalp. - Devices used for sports purposes, such as action cameras and wearable cameras for sports use. - Devices used for agriculture, such as cameras that monitor the condition of fields and crops.

[0138] <Examples of Configuration Combinations> The technology can also take the following configurations: (1) An image sensor in which an event pixel that detects when a change in brightness exceeds a predetermined threshold as the occurrence of an event and outputs an event signal, and a grayscale pixel that outputs a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light are mixed together in the pixel array, and a first shield wire connected to a predetermined power supply voltage is arranged between a first wire connected to the gate electrode of a first amplifier transistor constituting the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel. (2) The image sensor according to (1) above, wherein the grayscale pixels include pixels of a first color, pixels of a second color, pixels of a third color, and pixels of a fourth color, and a first color pixel region having a plurality of pixels of the first color, a second color pixel region having a plurality of pixels of the second color, a third color pixel region having a plurality of pixels of the third color, and a fourth color pixel region having a plurality of pixels of the fourth color are arranged in a 2x2 array in the row direction × column direction, and the event pixels are provided in two different color pixel regions among the first color pixel region, the second color pixel region, the third color pixel region, and the fourth color pixel region. (3) The image sensor according to (2) above, wherein the event pixels are composed of a photoelectric conversion unit, a first amplifier transistor, and a first logarithmic transistor, and the first wiring connects the gate electrode of the first amplifier transistor and the source of the first logarithmic transistor, which is a node for extracting current from the photoelectric conversion unit. (4) The image sensor according to (3) above, wherein one event pixel is provided across two unit regions, each having two different color pixel regions, with each region having one event pixel, and the edges of these unit regions being adjacent to each other.(5) The image sensor described in (2) above, wherein the event pixel is composed of a photoelectric conversion unit, the first amplifier transistor, the first logarithmic transistor, the second amplifier transistor, and the second logarithmic transistor, the photoelectric conversion unit is provided in two separate locations, the first wiring connects the gate electrode of the first amplifier transistor, the source of the first logarithmic transistor which serves as a node for extracting current from the photoelectric conversion unit, and a diffusion layer for extracting current from the photoelectric conversion unit on the side where the first logarithmic transistor is not provided, and the first shield wiring is arranged between the second wiring which connects the drain of the first logarithmic transistor, the gate electrode of the second amplifier transistor, and the source of the second logarithmic transistor, and the vertical signal line. (6) The image sensor according to (5), wherein one event pixel is provided spanning two unit regions where adjacent corners are arranged, with one event pixel each in two different color pixel regions, with one event pixel in each of the unit regions corresponding to the size of which two or more pixels of the same color arranged in a row. (7) The image sensor according to (3), wherein a power supply wiring for the event pixel and a power supply wiring for the grayscale pixel are provided separately, and a first shield wiring connected to the power supply wiring for the event pixel is arranged between the first wiring and the power supply wiring for the grayscale pixel. (8) The image sensor according to (5), wherein a power supply wiring for the event pixel and a power supply wiring for the grayscale pixel are provided separately, and a first shield wiring connected to the power supply wiring for the event pixel is arranged between the first wiring and the power supply wiring for the grayscale pixel, and a second shield wiring connected to the power supply wiring for the event pixel is arranged between the first wiring and the vertical signal line, and between the second wiring and the vertical signal line.(9) An electronic device comprising an image sensor having an event pixel that detects when a brightness change exceeds a predetermined threshold as the occurrence of an event and outputs an event signal, and a grayscale pixel that outputs a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light, all of which are arranged in a pixel array, and a first shield wire connected to a predetermined power supply voltage is arranged between a first wiring connected to the gate electrode of a first amplifier transistor constituting the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel. (10) An image sensor having an event pixel that detects when a brightness change exceeds a predetermined threshold as the occurrence of an event and outputs an event signal, and a grayscale pixel that outputs a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light, all of which are arranged in a pixel array, all of which are arranged in a pixel array, and a wiring connected to an electrode that receives the logarithmically transformed voltage output from the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel, all of which are arranged in a grayscale pixel. (11) The image sensor according to (10), wherein the grayscale pixels include pixels of a first color, pixels of a second color, pixels of a third color, and pixels of a fourth color, and a first color pixel region having a plurality of pixels of the first color, a second color pixel region having a plurality of pixels of the second color, a third color pixel region having a plurality of pixels of the third color, and a fourth color pixel region having a plurality of pixels of the fourth color are arranged in a 2x2 array in the row direction × column direction, and the event pixels are provided in two different color pixel regions among the first color pixel region, the second color pixel region, the third color pixel region, and the fourth color pixel region. (12) The image sensor according to (11), wherein one event pixel is provided across two unit regions, each having one pixel in two different color pixel regions, where the edges or corners of the unit regions are adjacent to each other, with one unit region corresponding to the size in which two or more pixels of the same color arranged in a row direction are arranged.(13) An electronic device comprising an image sensor having event pixels that detect when a change in brightness exceeds a predetermined threshold as the occurrence of an event and output an event signal, and grayscale pixels that output a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light, arranged in a pixel array portion, wherein a shielded wire connected to a predetermined power supply voltage is arranged between a wire connected to an electrode that receives a logarithmically transformed voltage output from the event pixels and a vertical signal line that outputs a pixel signal from the grayscale pixels. (14) An image sensor in which a first color pixel region having a plurality of pixels of a first color, a second color pixel region having a plurality of pixels of a second color, a third color pixel region having a plurality of pixels of a third color, and a fourth color pixel region having a plurality of pixels of a fourth color are arranged in a 2x2 array in the row direction × column direction, and in two different color pixel regions of the first, second, third, and fourth color pixel regions, there are separate function pixels which are pixels that have a different function from the pixels of the first color, the pixels of the second color, the pixels of the third color, and the pixels of the fourth color, and one of the separate function pixels is provided across two of the unit regions, one of which is arranged in each of the two different color pixel regions, with one unit region corresponding to the size in which two or more pixels of the same color arranged in the row direction are arranged. (15) The image sensor according to (14) above, wherein the separate function pixel is an event pixel that detects when a change in brightness exceeds a predetermined threshold as the occurrence of an event and outputs an event signal. (16) The image sensor according to (15) above, wherein the event pixel is provided with a color filter layer having a color filter of the first color, the second color, the third color, and the fourth color, and a transparent layer that transmits light of all colors. (17) The image sensor according to (15) or (16) above, wherein the two unit regions on which the event pixels are provided are adjacent to each other by their edges or corners.(18) The image sensor according to any one of (15) to (17), wherein the first color pixel region, the second color pixel region, the third color pixel region, and the fourth color pixel region are a red pixel region, a blue pixel region, a first green pixel region, and a second green pixel region, respectively, and at least one of the two unit regions on which the event pixels are provided is located in the blue pixel region. (19) The image sensor according to any one of (15) to (18), wherein a first semiconductor substrate, a second semiconductor substrate, and a third semiconductor substrate are stacked, the first semiconductor substrate is provided with a photoelectric conversion unit for the event pixels, the second semiconductor substrate is provided with a signal processing circuit for event signals that performs signal processing on the event signals output from the event pixels, and the third semiconductor substrate is provided with a signal processing circuit for pixel signals that performs signal processing on the pixel signals output from the first color pixels, the second color pixels, the third color pixels, and the fourth color pixels. (20) An electronic device comprising an image sensor wherein a first color pixel region having a plurality of pixels of a first color, a second color pixel region having a plurality of pixels of a second color, a third color pixel region having a plurality of pixels of a third color, and a fourth color pixel region having a plurality of pixels of a fourth color are arranged in a 2x2 array in the row direction × column direction, and two different color pixel regions among the first, second, third, and fourth color pixel regions are provided with separate function pixels which are pixels that have a function different from the first color pixels, second color pixels, third color pixels, and fourth color pixels, and one of the separate function pixels is provided across two of the unit regions, one of which is arranged in each of the two different color pixel regions, with one unit region corresponding to the size in which two or more pixels of the same color arranged in the row direction are arranged.

[0139] It should be noted that this embodiment is not limited to the embodiment described above, and various modifications are possible without departing from the spirit of this disclosure. Furthermore, the effects described herein are merely illustrative and not limiting, and other effects may also exist.

[0140] 11 Image sensor, 12 Color pixel, 13 EVS pixel, 21 Photoelectric conversion unit, 22 First amplifier transistor, 23 First logarithmic transistor, 24 Second amplifier transistor, 25 Second logarithmic transistor, 26 Capacitor, 27 Load MOS, 28 Third logarithmic transistor, 31 VDD wiring, 32 VSS wiring, 33 VDD wiring, 34 VDDEVS wiring, 35 and 36 VSSEVS wiring, 41 VPD wiring, 42 VSL wiring, 43 Shield wiring, 44 Connection wiring, 45 D1 wiring, 46-48 Shield wiring, 51 VPR electrode, 52 Connection wiring, 61-64 VSL wiring, 65 and 66 VDD wiring, 67 Connection wiring, 71-1 to 71-3 Semiconductor substrates

Claims

1. An image sensor in which an event pixel that detects when a change in brightness exceeds a predetermined threshold as the occurrence of an event and outputs an event signal, and a grayscale pixel that outputs a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light are arranged to be mixed in the pixel array, and a first shield wire connected to a predetermined power supply voltage is arranged between a first wiring connected to the gate electrode of a first amplifier transistor constituting the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel.

2. The image sensor according to claim 1, wherein the grayscale pixels include pixels of a first color, pixels of a second color, pixels of a third color, and pixels of a fourth color, and the first color pixel region having a plurality of pixels of the first color, the second color pixel region having a plurality of pixels of the second color, the third color pixel region having a plurality of pixels of the third color, and the fourth color pixel region having a plurality of pixels of the fourth color are arranged in a 2x2 array in the row direction × column direction, and the event pixels are provided in two different color pixel regions among the first color pixel region, the second color pixel region, the third color pixel region, and the fourth color pixel region.

3. The image sensor according to claim 2, wherein the event pixel is composed of a photoelectric conversion unit, the first amplifier transistor, and the first wiring connects the gate electrode of the first amplifier transistor and the source of the first logarithmic transistor, which serves as a node for extracting current from the photoelectric conversion unit.

4. The image sensor according to claim 3, wherein one event pixel is provided across two unit regions, each having two different color pixel regions, where the edges of the two unit regions are adjacent, with one event pixel each being located in a single region corresponding to the size of which two or more pixels of the same color arranged in a row.

5. The image sensor according to claim 2, wherein the event pixel is composed of a photoelectric conversion unit, the first amplifier transistor, the first logarithmic transistor, the second amplifier transistor, and the second logarithmic transistor, the photoelectric conversion unit is provided in two separate locations, the first wiring connects the gate electrode of the first amplifier transistor, the source of the first logarithmic transistor which serves as a node for extracting current from the photoelectric conversion unit, and a diffusion layer for extracting current from the photoelectric conversion unit on the side where the first logarithmic transistor is not provided, and the first shield wiring is arranged between the second wiring connecting the drain of the first logarithmic transistor, the gate electrode of the second amplifier transistor, and the source of the second logarithmic transistor, and the vertical signal line.

6. The image sensor according to claim 5, wherein one event pixel is provided across two unit regions where adjacent corners are located, with one event pixel each being located in two different color pixel regions, with each region corresponding to the size of which two or more pixels of the same color arranged in a row.

7. The image sensor according to claim 3, wherein a power supply wiring for the event pixel and a power supply wiring for the grayscale pixel are provided separately, and the first shield wiring connected to the power supply wiring for the event pixel is arranged between the first wiring and the power supply wiring for the grayscale pixel.

8. The image sensor according to claim 5, wherein the power supply wiring for the event pixel and the power supply wiring for the grayscale pixel are provided separately, the first shield wiring connected to the power supply wiring for the event pixel is arranged between the first wiring and the power supply wiring for the grayscale pixel, and the second shield wiring connected to the power supply wiring for the event pixel is arranged between the first wiring and the vertical signal line, and between the second wiring and the vertical signal line.

9. An electronic device comprising an image sensor in which an event pixel is arranged in a pixel array such that an event pixel detects when a change in brightness exceeds a predetermined threshold and outputs an event signal, and a grayscale pixel is arranged in a pixel array such that an event pixel is detected and a grayscale pixel is output that indicates the brightness level of the grayscale corresponding to the amount of incident light, and a first shield wire connected to a predetermined power supply voltage is arranged between a first wire connected to the gate electrode of a first amplifier transistor constituting the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel.

10. An image sensor in which an event pixel is arranged in a pixel array such that an event pixel detects when a change in brightness exceeds a predetermined threshold and outputs an event signal, and a grayscale pixel is arranged in a pixel array such that an event pixel detects when a change in brightness exceeds a predetermined threshold and outputs an event signal, and a grayscale pixel is arranged between a wiring connected to an electrode that receives the logarithmically transformed voltage output from the event pixel and a vertical signal line that outputs a pixel signal from the grayscale pixel, and a shielded wiring connected to a predetermined power supply voltage.

11. The image sensor according to claim 10, wherein the grayscale pixels include pixels of a first color, pixels of a second color, pixels of a third color, and pixels of a fourth color, and a first color pixel region having a plurality of pixels of the first color, a second color pixel region having a plurality of pixels of the second color, a third color pixel region having a plurality of pixels of the third color, and a fourth color pixel region having a plurality of pixels of the fourth color are arranged in a 2x2 array in the row direction × column direction, and the event pixels are provided in two different color pixel regions among the first color pixel region, the second color pixel region, the third color pixel region, and the fourth color pixel region.

12. The image sensor according to claim 11, wherein one event pixel is provided spanning two unit regions where adjacent edges or corners are adjacent, with one region corresponding to the size in which two or more pixels of the same color arranged in a row are arranged.

13. An electronic device comprising an image sensor having event pixels that detect when a change in brightness exceeds a predetermined threshold as an event and output an event signal, and grayscale pixels that output a pixel signal indicating the brightness of a grayscale level corresponding to the amount of incident light, all of which are arranged in a pixel array portion, and a shielded wire connected to a predetermined power supply voltage is arranged between a wire connected to an electrode that receives a logarithmically transformed voltage output from the event pixels and a vertical signal line that outputs a pixel signal from the grayscale pixels.

14. An image sensor in which a first color pixel region having a plurality of pixels of a first color, a second color pixel region having a plurality of pixels of a second color, a third color pixel region having a plurality of pixels of a third color, and a fourth color pixel region having a plurality of pixels of a fourth color are arranged in a 2x2 array in the row direction x column direction, and in two different color pixel regions among the first, second, third, and fourth color pixel regions, there are separate function pixels which are pixels that have a function different from the pixels of the first color, second color, third color, and fourth color, and one of the separate function pixels is provided across two of the unit regions, with one unit region corresponding to the size in which two or more pixels of the same color arranged in a row direction are arranged, and one separate function pixel is provided across two of the unit regions, one each in the two different color pixel regions.

15. The image sensor according to claim 14, wherein the separate functional pixel is an event pixel that detects when a change in brightness exceeds a predetermined threshold as the occurrence of an event and outputs an event signal.

16. The image sensor according to claim 15, wherein the event pixel is provided with a color filter layer having color filters for the first color, the second color, the third color, and the fourth color, and the color filter layer is provided with a transparent layer that transmits light of all colors.

17. The image sensor according to claim 15, wherein the two unit regions on which the event pixels are provided are adjacent to each other by their edges or corners.

18. The image sensor according to claim 15, wherein the first color pixel region, the second color pixel region, the third color pixel region, and the fourth color pixel region are a red pixel region, a blue pixel region, a first green pixel region, and a second green pixel region, respectively, and at least one of the two unit regions on which the event pixels are provided is located in the blue pixel region.

19. The image sensor according to claim 15, wherein at least a first semiconductor substrate, a second semiconductor substrate, and a third semiconductor substrate are stacked, the first semiconductor substrate is provided with a photoelectric conversion unit for the event pixel, the second semiconductor substrate is provided with a signal processing circuit for event signals that performs signal processing on the event signal output from the event pixel, and the third semiconductor substrate is provided with a signal processing circuit for pixel signals that performs signal processing on the pixel signals output from the first color pixel, the second color pixel, the third color pixel, and the fourth color pixel.

20. An electronic device comprising an image sensor in which a first color pixel region having a plurality of pixels of a first color, a second color pixel region having a plurality of pixels of a second color, a third color pixel region having a plurality of pixels of a third color, and a fourth color pixel region having a plurality of pixels of a fourth color are arranged in a 2x2 array in the row direction x column direction, and in two different color pixel regions among the first, second, third, and fourth color pixel regions, there are separate function pixels which are pixels that have a function different from the pixels of the first color, second color, third color, and fourth color, and one of the separate function pixels is provided across two of the unit regions, with one unit region corresponding to the size in which two or more pixels of the same color arranged in a row direction are arranged, and one separate function pixel is provided across two of the unit regions, one each in the two different color pixel regions.

Images