Bonding device and bonding method

Abstract

This bonding device aligns a plate-shaped body and a substrate on the basis of relative positions of a first mark on the plate-shaped body and a second mark on the substrate, and bonds the plate-shaped body and the substrate. The bonding device is provided with a first detection unit that detects at least one of the first mark and the second mark. The first detection unit comprises: a light source that generates light; an optical system that forms an optical path for irradiating the plate-shaped body or the substrate with the light generated by the light source; and a camera that receives reflected light of the light irradiated by the optical system. The camera comprises: a light receiving surface that includes a first region; and a first filter that is provided to the first region and selectively transmits light of a first wavelength band. The optical system comprises a fifth filter that selectively transmits light of a fifth A wavelength band along the optical path. The fifth A wavelength band overlaps only a portion of the first wavelength band.

Description

Bonding device and bonding method

[0001] The present disclosure relates to a bonding device and a bonding method.

[0002] The bonding device described in Patent Document 1 bonds a chip to a substrate. This bonding device has a first imaging unit, a second imaging unit, and a third imaging unit. The first imaging unit images the alignment mark on the bonding surface of the chip before bonding the chip and the substrate. The second imaging unit images the alignment mark on the bonding surface of the substrate. The third imaging unit simultaneously images the alignment marks on the respective bonding surfaces of the chip and the substrate after bonding the chip and the substrate.

[0003] Japanese Patent Application Laid-Open No. 2024-160867

[0004] One embodiment of the present disclosure provides a technique capable of improving the detection accuracy of at least one of the first mark and the second mark.

[0005] The bonding device according to one embodiment of the present disclosure aligns the plate-like body and the substrate based on the relative positions of the first mark of the plate-like body and the second mark of the substrate, and bonds the plate-like body and the substrate. The bonding device includes a first detection unit that detects at least one of the first mark and the second mark. The first detection unit includes a light source that generates light, an optical system that forms an optical path for irradiating the light generated by the light source onto the plate-like body or the substrate, and a camera that receives the reflected light of the light irradiated by the optical system. The camera has a light receiving surface including a first region, and a first filter provided in the first region that selectively transmits light in a first wavelength band. The optical system has a fifth filter that selectively transmits light in a fifth A wavelength band in the middle of the optical path. The fifth A wavelength band overlaps only a part of the first wavelength band.

[0006] According to one embodiment of the present disclosure, the detection accuracy of at least one of the first mark and the second mark can be improved.

[0007] Figure 1 is a plan view showing an example of a bonding system. Figure 2 is a cross-sectional view showing an example of a carrier before the die is picked up. Figure 3 is a cross-sectional view showing an example of a substrate before the die is bonded. Figure 4 is a cross-sectional view showing an example of a substrate after the die has been bonded. Figure 5 is a flowchart showing an example of the operation of the bonding system. Figure 6 is a perspective view showing an example of a bonding apparatus. Figure 7 is a perspective view showing an example of die transport in the bonding apparatus. Figure 8 is a plan view showing an example of die-substrate alignment. Figure 9 is a perspective view showing an example of alignment of the first detection unit and the second detection unit. Figure 10 shows an example of detection of the second mark before bonding the die and the substrate, where (A) is the first state, (B) is the second state, and (C) is the third state. Figure 11 shows an example of detection of the first and second marks after bonding the die and the substrate, where (A) is the first state, (B) is the second state, and (C) is the third state. Figure 12 shows an example of detecting the first mark before bonding the die and the substrate, where (A) is the first state, (B) is the second state, and (C) is the third state. Figure 13 shows an example of a combination of wavelength bands of light transmitted by each filter. Figure 14 shows an example of a combination of the optical path state of the optical system and the wavelength bands imaged by the camera's light-receiving surface. Figure 15 shows an example of the imaging positions of the first and second marks on the camera's light-receiving surface. Figure 16 shows a modified example of the imaging positions of the first and second marks on the camera's light-receiving surface.

[0008] Embodiments of this disclosure will be described below with reference to the drawings. In each drawing, identical or similar components are denoted by the same reference numerals, and their descriptions may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical.

[0009] The X-axis direction includes the positive X-axis direction and the negative X-axis direction, which is the opposite direction to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction, which is the opposite direction to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction, which is the opposite direction to the positive Z-axis direction. The positive Z-axis direction is upward, and the negative Z-axis direction is downward.

[0010] A bonding system 1 according to one embodiment will be described with reference to Figures 1 to 4. The bonding system 1 bonds a plate-like body to a substrate W. The plate-like body is, for example, a die D. The die D is smaller than the substrate W. Although not shown, the plate-like body may be a second substrate separate from the substrate W. The second substrate has a size similar to that of the substrate W. The second substrate, like the substrate W, has a semiconductor substrate and may further have devices that are electrically bonded to the devices of the substrate W.

[0011] The bonding system 1 bonds the die D and the substrate W with the bonding surface Da of the die D facing the bonding surface Wa of the substrate W. For example, the bonding system 1 repeatedly bonds the die D and the substrate W, bonding multiple dies D to the substrate W one by one in sequence.

[0012] As shown in Figure 2, the carrier E holds multiple dies D. The carrier E holds each die D from below, with the bonding surface Da of each die D facing upward. This allows for activation and hydrophilization of the bonding surface Da of each die D. The carrier E has a carrier substrate E1 and a resin film E2 provided on the surface of the carrier substrate E1 facing the die D. The non-bonding surface Db of the die D is in contact with the resin film E2.

[0013] Carrier E holds multiple dies D on a resin film E2. Carrier E can, for example, electrostatically attract the dies D. Alternatively, by pressing the dies D against the resin film E2, the resin film E2 can be deformed to allow gas to escape from between the dies D and the resin film E2, making it possible to vacuum-adsorb the dies D to the resin film E2. Carrier E may also attract the dies D by intermolecular forces.

[0014] The carrier substrate E1 may be conductive or insulating. A first through-hole E3 is formed in the carrier substrate E1, penetrating the substrate in the thickness direction. The die D can be detached from the carrier E by supplying gas to the first through-hole E3 or by inserting a pin (not shown) into the first through-hole E3. The number and arrangement of the first through-holes E3 are not particularly limited. One or more first through-holes E3 may be formed for each die D.

[0015] The resin film E2 is preferably composed of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the viewpoint of durability when modifying the bonding surface Da of the die D, the resin film E2 is preferably composed of, for example, polyimide or EVA (ethylene vinyl acetate copolymer). The thickness of the resin film E2 is, for example, 10 μm. In this embodiment, the resin film E2 is a single layer, but it may be a multi-layer structure. For example, the resin film E2 may have a polyolefin layer and an acrylic adhesive layer.

[0016] Note that carrier E may have a configuration other than that shown in Figure 2. For example, carrier E may be a tape frame. The tape frame has a frame and a tape that covers the opening of the frame, and the die D is mounted on the tape. The tape frame holds the die D from below with the bonding surface Da of the die D facing upward. This allows for activation and hydrophilization of the bonding surface Da. The non-bonding surface Db of the die D is in contact with the tape.

[0017] As shown in Figure 3, the substrate W comprises a semiconductor substrate W1 and a plurality of devices W2 formed on the semiconductor substrate W1. In this embodiment, the semiconductor substrate W1 is a silicon wafer, but it may also be a compound semiconductor wafer. A glass substrate may be used instead of the semiconductor substrate W1. The substrate W has a bonding surface Wa and a non-bonding surface facing the opposite direction from the bonding surface Wa. The bonding surface Wa and non-bonding surface of the substrate W are circular, but may also be rectangular. The substrate W has a plurality of devices W2 on the bonding surface Wa. The plurality of devices W2 are separated by a plurality of streets that are orthogonal to each other. Each device W2 includes an electronic circuit. As shown in Figure 4, a die D is electrically connected to each device W2. Then, the substrate W is cut along the streets to separate each device W2 into individual pieces to obtain a semiconductor device. The semiconductor device includes the devices W2 and the die D.

[0018] Die D is a semiconductor substrate on which multiple devices, separate from device W2, are formed, and each device is separated into individual pieces. A glass substrate may be used instead of a semiconductor substrate. Die D has a bonding surface Da and a non-bonding surface Db facing the opposite direction from bonding surface Da. The non-bonding surface Db of die D does not need to be a surface that is not bonded to the substrate W, and may be bonded to another die (not shown). Die D has a device on bonding surface Da. The electronic circuit of the device on die D and the electronic circuit of device W2 on the substrate W are electrically connected. The type and number of dies D electrically connected to a single device W2 are not particularly limited. Although not shown, multiple dies D may be electrically connected to a single device W2.

[0019] As shown in Figure 1, the bonding system 1 includes a control circuit 9. The control circuit 9 is, for example, a computer. The control circuit 9 includes an arithmetic unit 91, such as a CPU (Central Processing Unit), and a storage unit 92, such as memory. The storage unit 92 stores programs that control various processes executed in the bonding system 1.

[0020] The control circuit 9 controls the operation of the junction system 1 by causing the arithmetic unit 91 to execute a program stored in the memory unit 92. A lower-level control circuit may be provided for each device constituting the junction system 1 to control the operation of that device, and a higher-level control circuit may be provided to comprehensively control multiple lower-level control circuits. The control circuit 9 may be composed of multiple lower-level control circuits and a higher-level control circuit.

[0021] The control circuit 9 includes electronic circuits such as a CPU, GPU (Graphics Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control circuit 9 performs the various control operations described in this specification by executing instruction codes stored in a storage medium such as memory, or by being designed as a circuit for a special application.

[0022] As shown in Figure 1, the joining system 1 comprises an input / output station 2, a first processing station 3, and a second processing station 5. The input / output station 2, the first processing station 3, and the second processing station 5 are arranged in this order, in a line from the negative X-axis direction to the positive X-axis direction. Although not shown, there may be multiple second processing stations 5, and multiple second processing stations 5 may be arranged in a line from the negative X-axis direction to the positive X-axis direction.

[0023] The loading / unloading station 2 is equipped with a mounting table 20. The mounting table 20 is used to place the first cassette C1, the second cassette C2, the third cassette C3, and the fourth cassette C4. The first cassette C1 contains the substrate W before the die D is bonded. The second cassette C2 contains the substrate W after the die D has been bonded (i.e., the laminated substrate DW composed of the substrate W and the die D). The third cassette C3 contains the carrier E before the die D is picked up. The fourth cassette C4 contains the carrier E after the die D has been picked up.

[0024] The loading / unloading station 2 comprises a first transport area 21 and a first transport device 22. The first transport area 21 is adjacent to the mounting table 20. The first transport area 21 extends in the Y-axis direction. The first transport device 22 has a transport arm. The transport arm holds and transports the substrate W and carrier E in the first transport area 21. There may be one or more transport arms. A transport arm for the substrate W and a transport arm for the carrier E may be provided separately. The first transport device 22 has a drive unit (not shown) for moving or rotating the transport arm. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and rotating about the vertical axis.

[0025] The first processing station 3 includes a first storage device 30. The first storage device 30 is adjacent to the first transport area 21. The first storage device 30 is positioned on the opposite side of the loading table 20 with respect to the first transport area 21. The first storage device 30 temporarily stores the substrates W and carriers E. The first storage device 30 has a plurality of stages arranged vertically. Each stage places the substrates W and carriers E on it. The stage for the substrates W and the stage for the carriers E may be provided separately.

[0026] The first processing station 3 comprises a second transport area 31 and a second transport device 32. The second transport area 31 is adjacent to the first storage device 30 and extends from the first storage device 30 in the positive X-axis direction. The second transport device 32 has a transport arm. The transport arm holds and transports the substrate W and carrier E in the second transport area 31. There may be one or more transport arms. A transport arm for the substrate W and a transport arm for the carrier E may be provided separately. The second transport device 32 has a drive unit (not shown) for moving or rotating the transport arm. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and rotating about the vertical axis.

[0027] The first processing station 3 comprises a first activation device 33, a first hydrophilization device 34, a second activation device 35, and a second hydrophilization device 36. The first activation device 33, the first hydrophilization device 34, the second activation device 35, and the second hydrophilization device 36 are adjacent to the second transport area 31 and are provided on the positive or negative Y-axis side of the second transport area 31.

[0028] The first activation device 33 activates the bonding surface Da of the die D while the die D is held by the carrier E. The first activation device 33 is, for example, a plasma processing device. In the first activation device 33, for example, oxygen gas, which is the processing gas, is excited and plasma-generated under reduced pressure and then ionized. The bonding surface Da of the die D is activated when oxygen ions are irradiated onto it. The processing gas is not limited to oxygen gas, and may be nitrogen gas, for example.

[0029] The first hydrophilization device 34 hydrophilizes the bonding surface Da of the die D while the die D is held in place by the carrier E. For example, the first hydrophilization device 34 supplies pure water (e.g., deionized water) onto the die D while rotating the carrier E held in the spin chuck. The pure water imparts OH groups to the bonding surface Da of the die D, which has been previously activated. The die D and the substrate W can then be bonded using the hydrogen bonds between the OH groups.

[0030] The second activation device 35 activates the bonding surface Wa of the substrate W. The second activation device 35 is, for example, a plasma processing device. In the second activation device 35, for example, oxygen gas, which is the processing gas, is excited and plasma-generated under reduced pressure and then ionized. The bonding surface Wa of the substrate W is activated when oxygen ions are irradiated onto it. The processing gas is not limited to oxygen gas, and may be nitrogen gas, for example.

[0031] The second hydrophilization device 36 hydrophilizes the bonding surface Wa of the substrate W. For example, the second hydrophilization device 36 rotates the substrate W, which is held in a spin chuck, while supplying pure water (e.g., deionized water) onto the substrate W. The pure water imparts OH groups to the bonding surface Wa of the substrate W, which has been previously activated. The die D and the substrate W can be bonded by utilizing the hydrogen bonds between the OH groups.

[0032] The second processing station 5 includes a second storage device 50. The second storage device 50 is adjacent to the second transport area 31. The second storage device 50 is positioned on the opposite side from the first storage device 30 with respect to the second transport area 31. The second storage device 50 temporarily stores the substrates W and carriers E. The second storage device 50 has a plurality of stages arranged vertically. Each stage holds at least one of the substrates W and carriers E. The stage for the substrates W and the stage for the carriers E may be provided separately.

[0033] The second processing station 5 comprises a third transport area 51 and a third transport device 52. The third transport area 51 is adjacent to the second storage device 50 and extends from the second storage device 50 in the positive X-axis direction. The third transport device 52 has a transport arm. The transport arm holds and transports the substrate W and carrier E in the third transport area 51. There may be one or more transport arms. A transport arm for the substrate W and a transport arm for the carrier E may be provided separately. The third transport device 52 has a drive unit (not shown) for moving or rotating the transport arm. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction), and rotating about the vertical axis.

[0034] The second processing station 5 is equipped with a bonding device 60. The bonding device 60 is adjacent to the third transport area 51 and is provided on the positive or negative Y-axis side of the third transport area 51. The bonding device 60 bonds a plate-like body to a substrate W. The plate-like body is, for example, a die D. The bonding device 60 separates the die D from the carrier E and bonds the die D to the substrate W by facing the bonding surface Da of the separated die D toward the bonding surface Wa of the substrate W. Details of the bonding device 60 will be described later.

[0035] Next, a bonding method according to one embodiment will be described with reference to Figure 5. The bonding method shown in Figure 5 is also applicable when the plate-like body is the second substrate. Steps S101 to S105 shown in Figure 5 are carried out under the control of the control circuit 9. First, the first transport device 22 takes the carrier E from the third cassette C3 and transports it to the first storage device 30. Next, the second transport device 32 takes the carrier E from the first storage device 30 and transports it to the first activation device 33.

[0036] Next, the first activation device 33 activates the bonding surface Da of the die D while the die D is held by the carrier E (step S101). After that, the second transport device 32 removes the carrier E from the first activation device 33 and transports it to the first hydrophilization device 34.

[0037] Next, the first hydrophilization device 34 hydrophilizes the bonding surface Da of the die D while the die D is held by the carrier E (step S102). Then, the second conveying device 32 removes the carrier E from the first hydrophilization device 34 and conveys it to the second storage device 50. Subsequently, the third conveying device 52 removes the carrier E from the second storage device 50 and conveys it to the bonding device 60.

[0038] In parallel with the above steps S101 to S102, the following steps S103 to S104 are performed. First, the first transport device 22 takes the substrate W from the first cassette C1 and transports it to the first storage device 30. Next, the second transport device 32 takes the substrate W from the first storage device 30 and transports it to the second activation device 35.

[0039] Next, the second activation device 35 activates the bonding surface Wa of the substrate W (step S103). After that, the second transport device 32 removes the substrate W from the second activation device 35 and transports it to the second hydrophilization device 36.

[0040] Next, the second hydrophilization device 36 hydrophilizes the bonding surface Wa of the substrate W (step S104). Then, the second transport device 32 removes the substrate W from the second hydrophilization device 36 and transports it to the second storage device 50. Subsequently, the third transport device 52 removes the substrate W from the second storage device 50 and transports it to the bonding device 60.

[0041] Next, the bonding device 60 separates the die D from the carrier E, and bonds the die D and the substrate W with the bonding surface Da of the separated die D facing the bonding surface Wa of the substrate W (step S105). When a plurality of dies D are electrically connected to one device W2, the bonding of the die D and the substrate W is performed for each type of die D.

[0042] The substrate W after the die D is bonded is conveyed to the second cassette C2. First, the third transfer device 52 takes out the substrate W after the die D is bonded from the bonding device 60 and conveys it to the second storage device 50. Next, the second transfer device 32 takes out the substrate W after the die D is bonded from the second storage device 50 and conveys it to the first storage device 30. Finally, the first transfer device 22 takes out the substrate W after the die D is bonded from the first storage device 30 and stores it in the second cassette C2.

[0043] The carrier E after the die D is separated is stored in the fourth cassette C4. First, the third transfer device 52 takes out the carrier E after the die D is separated from the bonding device 60 and conveys it to the second storage device 50. Next, the second transfer device 32 takes out the carrier E after the die D is separated from the second storage device 50 and conveys it to the first storage device 30. Finally, the first transfer device 22 takes out the carrier E after the die D is separated from the first storage device 30 and stores it in the fourth cassette C4.

[0044] In this embodiment, the bonding method of the die D and the substrate W is surface activated bonding (SAB: Surface Activated Bonding), but it may also be atomic diffusion bonding (ADB: Atomic Diffusion Bonding).

[0045] An example of a joining device 60 will be described with reference to Figure 6. A third transport area 51 is located on the positive Y-axis side of the joining device 60 shown in the figure. The joining device 60 has a frame 100. The frame 100 has a first frame 101 and a second frame 102. The first frame 101 and the second frame 102 are arranged side-by-side in the horizontal direction (X-axis direction). The first frame 101 and the second frame 102 may be provided as a single unit. The first frame 101 mainly supports the first holding part 110 and the pickup part 140. On the other hand, the second frame 102 mainly supports the second holding part 120 and the mounting part 150.

[0046] The bonding device 60 includes a first holding part 110. The first holding part 110 holds the carrier E. For example, the first holding part 110 holds the carrier substrate E1 from below with the resin film E2 of the carrier E facing upward. The first holding part 110 is, for example, a vacuum suction chuck. The first holding part 110 holds the carrier E horizontally from below with the bonding surface Da of the die D mounted on the carrier E facing upward. The bonding device 60 may also have a third moving mechanism 111. The third moving mechanism 111 moves the first holding part 110 in the X-axis direction and the Y-axis direction. The third moving mechanism 111 includes, for example, a linear motor.

[0047] The bonding device 60 includes a second holding part 120. The second holding part 120 holds the substrate W. For example, the second holding part 120 holds the substrate W from above with the bonding surface Wa of the substrate W facing downwards. The bonding device 60 may also have a fourth moving mechanism 121. The fourth moving mechanism 121 moves the second holding part 120 in the Y-axis direction. The fourth moving mechanism 121 includes, for example, a Y-axis guide 122, a Y-axis drive unit 123, and a support column 124. A pair of Y-axis guides 122 are provided on either side of the second holding part 120. The Y-axis drive unit 123 moves the second holding part 120 along the pair of Y-axis guides 122. The Y-axis drive unit 123 includes, for example, a linear motor. The support column 124 is fixed to the upper surface of the second frame 102 and supports the Y-axis guides 122 and the Y-axis drive unit 123.

[0048] The bonding device 60 includes a transfer unit 130. The transfer unit 130 transfers the die D from the carrier E held by the first holding unit 110 to the substrate W held by the second holding unit 120. The transfer unit 130 has, for example, a pickup unit 140 and a mount unit 150. By sharing the roles of the pickup unit 140 and the mount unit 150 as shown in FIG. 7, the transfer efficiency of the die D can be improved.

[0049] The pickup unit 140 picks up and transfers the die D from the carrier E held by the first holding unit 110. The pickup unit 140 has a first suction head 141 and a first moving mechanism 142. The first suction head 141 sucks the die D. The first moving mechanism 142 moves the first suction head 141.

[0050] The first suction head 141 sucks, for example, the bonding surface Da of the die D. The first suction head 141 may contact the bonding surface Da of the die D and, for example, vacuum-suck the die D. Note that the first suction head 141 may suck the die D in a non-contact manner so as not to contaminate the bonding surface Da of the die D.

[0051] For example, the first suction head 141 has a suction nozzle and an injection nozzle (not shown) on the surface facing the die D (for example, the lower surface). The suction nozzle sucks gas, and the injection nozzle injects gas. The first suction head 141 can suck the die D in a non-contact manner by the injection pressure (positive pressure) and the suction pressure (negative pressure) of the gas. Note that the suction method is not particularly limited. Examples of the non-contact suction method include the Bernoulli method or the ultrasonic method.

[0052] The first moving mechanism 142 moves the die D together with the first suction head 141. The first moving mechanism 142 includes, for example, a holder 143, an arm 144, an X-axis guide 145, an X-axis drive unit 146, and a support column 147. The holder 143 supports the first suction head 141 and moves in the X-axis direction along the X-axis guide 145 together with the arm 144. The X-axis drive unit 146 moves the first suction head 141 in the X-axis direction. More specifically, the X-axis drive unit 146 moves the holder 143 and the first suction head 141 in the X-axis direction together with the arm 144. The X-axis drive unit 146 includes, for example, a linear motor. The support column 147 is fixed to the upper surface of the first frame 101 and supports the X-axis guide 145 and the X-axis drive unit 146.

[0053] The first moving mechanism 142 may further include at least one of a Y-axis drive unit and a Z-axis drive unit. The Y-axis drive unit moves the first suction head 141 in the Y-axis direction. The Z-axis drive unit moves the first suction head 141 in the Z-axis direction. The Y-axis drive unit and the Z-axis drive unit include, for example, a linear motor. The first moving mechanism 142 may further include a rotation drive unit. The rotation drive unit rotates the first suction head 141 around the Z-axis. The rotation drive unit includes, for example, a rotary motor.

[0054] The mounting unit 150 receives the die D from the pickup unit 140 and mounts it onto the substrate W held by the second holding unit 120. The mounting unit 150 has a second suction head 151 and a second moving mechanism 152. The second suction head 151 picks up the die D from the opposite side from the first suction head 141. The second moving mechanism 152 moves the second suction head 151.

[0055] The second suction head 151 adsorbs, for example, the non-bonding surface Db of the die D. Since it is not a problem if the non-bonding surface Db is dirty, the second suction head 151 may come into contact with the die D. This can improve the suction force and suppress misalignment. The second suction head 151 adsorbs the die D, for example, using vacuum suction.

[0056] The second moving mechanism 152 moves the die D together with the second suction head 151. The second moving mechanism 152 includes, for example, a holder 153, a movable stage 154, an X-axis guide 155, an X-axis drive unit 156, a Y-axis guide 157, and a Y-axis drive unit 158. The holder 153 supports the second suction head 151 and moves along the X-axis guide 155 and Y-axis guide 157 in the X-axis and Y-axis directions together with the movable stage 154. The Y-axis guide 157 is provided in a pair on either side of the X-axis guide 155 and supports the X-axis guide 155 so that it can move in the Y-axis direction. The Y-axis guide 157 is fixed to the upper surface of the second frame 102. The X-axis drive unit 156 moves the second suction head 151 in the X-axis direction. More specifically, the X-axis drive unit 156 moves the holder 153 and the second suction head 151 in the X-axis direction together with the movable stage 154. The X-axis drive unit 156 includes, for example, a linear motor. The Y-axis drive unit 158 ​​moves the second suction head 151 in the Y-axis direction. More specifically, the Y-axis drive unit 158 ​​moves the movable stage 154, the holder 153, and the second suction head 151 in the Y-axis direction together with the X-axis guide 155. The Y-axis drive unit 158 ​​includes, for example, a linear motor.

[0057] The second moving mechanism 152 may further include a Z-axis drive unit. The Z-axis drive unit moves the second suction head 151 in the Z-axis direction. The Z-axis drive unit includes, for example, a linear motor. The second moving mechanism 152 may further include a rotation drive unit. The rotation drive unit rotates the second suction head 151 around the Z-axis. The rotation drive unit includes, for example, a rotary motor.

[0058] The bonding device 60 preferably includes a pressing section 160. The pressing section 160 assists the pickup of the die D by the pickup section 140. The pressing section 160 presses the resin film E2, for example, by supplying gas to the first through-hole E3 of the carrier substrate E1, or by inserting a pin (not shown) into the first through-hole E3. The direction of pressing is the direction in which the die D is picked up (for example, the positive Z-axis direction). The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, a wedge-shaped gap can be formed between the resin film E2 and the die D, and the die D can be smoothly picked up from the resin film E2. The pressing section 160 is provided inside or below the first holding section 110.

[0059] The bonding device 60 includes a control circuit 190. The control circuit 190 may be part of the control circuit 9. The control circuit 190 includes, for example, an arithmetic unit such as a CPU and a storage unit such as memory. The storage unit stores a program that controls various processes performed in the bonding device 60. The control circuit 190 controls the operation of the bonding system 1 by causing the arithmetic unit to execute the program stored in the storage unit.

[0060] Referring to Figure 8, an example of alignment between die D and substrate W will be described. Die D has a first mark Dm, and substrate W has a second mark Wm. The bonding apparatus 60 aligns die D and substrate W based on the relative positions of the first mark Dm and the second mark Wm, and then bonds die D and substrate W.

[0061] The first mark Dm is formed, for example, on the bonding surface Da of die D. However, the first mark Dm may also be formed on the non-bonding surface Db of die D or inside it. The number and shape of the first marks Dm are not limited to those shown in Figure 8. The first mark Dm may be a dedicated mark or may be part of the electronic circuit of die D.

[0062] The second mark Wm is formed, for example, on the bonding surface Wa of the substrate W. However, the second mark Wm may also be formed on the non-bonding surface Wb of the substrate W or inside it. The number and shape of the second marks Wm are not limited to those shown in Figure 8. The second mark Wm may be a dedicated mark or may be part of the electronic circuit of the device W2.

[0063] As shown in Figure 7, the bonding apparatus 60 includes a first detection unit 170 and a second detection unit 180. The first detection unit 170 and the second detection unit 180 each detect at least one of the first mark Dm and the second mark Wm. Note that the detection of the first mark Dm and the second mark Wm does not have to be performed each time the die D and the substrate W are bonded, but may be performed periodically.

[0064] The first detection unit 170 is provided, for example, below the second holding unit 120 and is moved horizontally together with the second suction head 151 by the second moving mechanism 152. Before the die D and the substrate W are joined, the first detection unit 170 images the joining surface Wa of the substrate W held by the second holding unit 120 and images the second mark Wm.

[0065] The second detection unit 180 is provided, for example, above the second suction head 151 and is fixed to the second holding unit 120. Before the bonding of the die D and the substrate W, the second detection unit 180 images the bonding surface Da of the die D that the second suction head 151 is adsorbed onto, and images the first mark Dm.

[0066] Referring to Figure 9, an example of alignment between the first detection unit 170 and the second detection unit 180 will be described. By simultaneously imaging the same reference mark Sm with the first detection unit 170 and the second detection unit 180, the control circuit 190 can detect the reference position of the relative position of the first detection unit 170 and the second detection unit 180. Note that imaging of the reference mark Sm does not have to be performed each time the die D and the substrate W are joined, but may be performed periodically.

[0067] An example of the first detection unit 170 will be described with reference to Figures 10 to 16. Note that the second detection unit 180 is configured similarly to the first detection unit 170, so its description will be omitted. However, the second detection unit 180 may have a different configuration from the first detection unit 170, or it may have a configuration similar to that of the conventional unit.

[0068] The first detection unit 170 includes, for example, a light source 210, an optical system 220, and a camera 230, as shown in Figures 10 to 12. The light source 210 generates light. The optical system 220 forms an optical path 221 that irradiates the die D or substrate W with the light generated by the light source 210. The camera 230 receives the reflected light from the light irradiated by the optical system 220.

[0069] As shown in Figure 10, the control circuit 190 controls the optical system 220 to irradiate light onto the substrate W held by the second holding unit 120, and the camera 230 to capture an image of the second mark Wm, before the die D and the substrate W are joined. Since the second mark Wm is exposed from the perspective of the light source 210 and the camera 230, visible light is suitable for capturing an image of the second mark Wm. When joining the die D and the substrate W, the control circuit 190 uses the image of the second mark Wm, which was captured in advance, to align the die D and the substrate W.

[0070] As shown in Figure 11, the control circuit 190 controls the optical system 220 to irradiate light onto the substrate W and die D held by the second holding unit 120 after the die D and substrate W are joined, and the camera 230 to simultaneously capture images of the first mark Dm and the second mark Wm. As seen from the light source 210 and the camera 230, the first mark Dm and the second mark Wm are hidden behind the die D, so infrared light is suitable for simultaneously capturing images of the first mark Dm and the second mark Wm. Based on the images of the first mark Dm and the second mark Wm captured after the nth joining, the control circuit 190 aligns the die D and the substrate W when performing the (n+1)th joining and subsequent joinings.

[0071] As shown in Figure 12, the control circuit 190 controls the optical system 220 to irradiate light onto the die D held by the pickup unit 140, and the camera 230 to capture an image of the first mark Dm. Specifically, the control circuit 190 controls the optical system 220 to irradiate light onto the die D that the first suction head 141 is adsorbing, and the camera 230 to capture an image of the first mark Dm. As the light source 210 and camera 230 view the first mark Dm, infrared light is suitable for capturing an image of the first mark Dm. When the control circuit 190 transfers the die D from the first suction head 141 to the second suction head 151, it uses a previously captured image of the first mark Dm to align the die D and the second suction head 151.

[0072] The details of the light source 210, optical system 220, and camera 230 that constitute the first detection unit 170 will be described below in this order.

[0073] The light source 210 is, for example, a halogen lamp. A halogen lamp generates light with a desired intensity across the visible and near-infrared regions. The wavelength of the light generated by the halogen lamp is, for example, 400 nm to 1800 nm. The light source 210 is not limited to a halogen lamp and may be an LED (Light Emitting Diode), etc. The light source 210 may have multiple light sources that generate light in different wavelength ranges from each other.

[0074] Visible light does not penetrate the die D or substrate W. Therefore, visible light is suitable when the first mark Dm or the second mark Wm is exposed as viewed from the light source 210 and the camera 230. On the other hand, near-infrared light penetrates the die D or substrate W. Therefore, infrared light is suitable when the first mark Dm or the second mark Wm is hidden behind or inside the die D or substrate W as viewed from the light source 210 and the camera 230.

[0075] The light generated by the light source 210 has a desired intensity across the entire bandwidth of the first wavelength band λ1, the second wavelength band λ2, the third wavelength band λ3, and the fourth wavelength band λ4, as described later. The intensity may vary depending on the wavelength. The first wavelength band λ1, the second wavelength band λ2, the third wavelength band λ3, and the fourth wavelength band λ4 are connected continuously as shown in Figure 13, but they may also be separated from each other and not connected continuously. The upper and lower limits of each wavelength band are not limited to the values ​​shown in Figure 13.

[0076] The optical system 220 may have a beam splitter 222 in the middle of the optical path 221. The beam splitter 222, for example, reflects light from the light source 210 toward the die D or substrate W, and transmits light from the die D or substrate W toward the camera 230. The arrangement of the light source 210 and the camera 230 may be reversed, and the beam splitter 222 may transmit light from the light source 210 toward the die D or substrate W, and reflect light from the die D or substrate W toward the camera 230.

[0077] The optical system 220 includes a fifth filter 223. The fifth filter 223 is a so-called bandpass filter that selectively transmits at least one of the light in the fifth A wavelength band λ5A and the light in the fifth B wavelength band λ5B along the optical path 221. The fifth filter 223 may also be a so-called multibandpass filter that selectively transmits both the light in the fifth A wavelength band λ5A and the light in the fifth B wavelength band λ5B along the optical path 221. In any case, the fifth filter 223 narrows the wavelength of the light before it hits the die D or substrate W, thereby suppressing thin-film interference and enabling the capture of a clear image.

[0078] As shown in Figure 13, the 5A wavelength band λ5A and the 5B wavelength band λ5B do not overlap with each other and are separated. The 5A wavelength band λ5A overlaps with only a part of the 1st wavelength band λ1, λ1b. Also, the 5A wavelength band λ5A overlaps with only a part of the 2nd wavelength band λ2, λ2a. On the other hand, the 5B wavelength band λ5B overlaps with only a part of the 3rd wavelength band λ3, λ3b. Also, the 5B wavelength band λ5B overlaps with only a part of the 4th wavelength band λ4, λ4a.

[0079] The optical system 220 includes a sixth filter 224. The sixth filter 224 is a so-called bandpass filter that selectively transmits at least one of the light in the 6A wavelength band λ6A, the 6B wavelength band λ6B, and the 6C wavelength band λ6C along the optical path 221. The sixth filter 224 may also be a so-called multibandpass filter that selectively transmits all of the light in the 6A wavelength band λ6A, the 6B wavelength band λ6B, and the 6C wavelength band λ6C along the optical path 221. In any case, the sixth filter 224 narrows the wavelength of the light before it hits the die D or the substrate W, thereby suppressing thin-film interference and enabling the capture of a clear image.

[0080] As shown in Figure 13, the 6A wavelength band λ6A, the 6B wavelength band λ6B, and the 6C wavelength band λ6C do not overlap with each other and are separated. The 6A wavelength band λ6A overlaps with only a part of the 1st wavelength band λ1a in a different frequency band than the 5A wavelength band λ5A. The 6B wavelength band λ6B overlaps with only a part of the 2nd wavelength band λ2b in a different frequency band than the 5A wavelength band λ5A, and also overlaps with only a part of the 3rd wavelength band λ3a in a different frequency band than the 5B wavelength band λ5B. Furthermore, the 6C wavelength band λ6C overlaps with only a part of the 4th wavelength band λ4b in a different frequency band than the 5B wavelength band λ5B.

[0081] The optical system 220 has a switching mechanism 225. The switching mechanism 225 switches the state of the optical path 221 between a first state, a second state, and a third state. The first state is a state in which the fifth filter 223 and the sixth filter 224 are retracted from the optical path 221, as shown in Figures 10(A), 11(A), and 12(A). The second state is a state in which the fifth filter 223 is inserted into the optical path 221 and the sixth filter 224 is retracted from the optical path 221, as shown in Figures 10(B), 11(B), and 12(B). The third state is a state in which the fifth filter 223 is retracted from the optical path 221 and the sixth filter 224 is inserted into the optical path 221, as shown in Figures 10(C), 11(C), and 12(C). The switching mechanism 225 has an actuator, such as a motor, for moving or rotating the fifth filter 223 and the sixth filter 224.

[0082] The optical system 220 may further include various lenses.

[0083] The camera 230 has a light-receiving surface 231. The light-receiving surface 231 is composed of a plurality of light-receiving elements. The light-receiving elements are, for example, CCDs (Charge Coupled Devices) or CMOS (Complementary Metal Oxide Semiconductors). Each light-receiving element generates an electrical signal corresponding to the intensity of the light it receives. Each light-receiving element may have sensitivity across the entire range of the first wavelength band λ1, the second wavelength band λ2, the third wavelength band λ3, and the fourth wavelength band λ4. The camera 230 transmits a signal indicating the captured image to the control circuit 190. The control circuit 190 processes the image captured by the camera 230 and detects at least one of the first mark Dm and the second mark Wm.

[0084] As shown in Figure 15, the light-receiving surface 231 has four distinct regions: a first region A1, a second region A2, a third region A3, and a fourth region A4. The first region A1 is the region where the first filter 232 is provided. The second region A2 is the region where the second filter 233 is provided. The third region A3 is the region where the third filter 234 is provided. The fourth region A4 is the region where the fourth filter 235 is provided.

[0085] The first region A1, the second region A2, the third region A3, and the fourth region A4 are separated, for example, by two virtual lines L1 and L2 that intersect at the center of the light-receiving surface 231. The first region A1, the second region A2, the third region A3, and the fourth region A4 are each, for example, rectangles. It is preferable that the first region A1, the second region A2, the third region A3, and the fourth region A4 have roughly the same size. The light-receiving surface 231 only needs to be divided into multiple regions, and the number of regions and the shape of each region are not particularly limited. Also, adjacent regions do not need to touch, and gaps may be formed between adjacent regions.

[0086] The camera 230 has a first filter 232. The first filter 232 is a so-called bandpass filter, provided in the first region A1, and selectively transmits light in the first wavelength band λ1. The first filter 232 blocks light with wavelengths shorter than the first wavelength band λ1 and light with wavelengths longer than the first wavelength band λ1.

[0087] The camera 230 has a second filter 233. The second filter 233 is a so-called bandpass filter, provided in the second region A2, and selectively transmits light in the second wavelength band λ2. The second filter 233 blocks light with wavelengths shorter than the second wavelength band λ2 and light with wavelengths longer than the second wavelength band λ2.

[0088] The camera 230 has a third filter 234. The third filter 234 is a so-called bandpass filter, provided in the third region A3, and selectively transmits light in the third wavelength band λ3. The third filter 234 blocks light with wavelengths shorter than the third wavelength band λ3 and light with wavelengths longer than the third wavelength band λ3.

[0089] The camera 230 has a fourth filter 235. The fourth filter 235 is a so-called bandpass filter, provided in the fourth region A4, and selectively transmits light in the fourth wavelength band λ4. The fourth filter 235 blocks light with wavelengths shorter than the fourth wavelength band λ4 and light with wavelengths longer than the fourth wavelength band λ4.

[0090] The first wavelength band λ1 and the second wavelength band λ2 may be in contact as shown in Figure 13, or they may partially overlap, although this is not shown. The second wavelength band λ2 is shifted to a longer wavelength than the first wavelength band λ1. Also, the second wavelength band λ2 and the third wavelength band λ3 may be in contact as shown in Figure 13, or they may partially overlap, although this is not shown. The third wavelength band λ3 is shifted to a longer wavelength than the second wavelength band λ2. Furthermore, the third wavelength band λ3 and the fourth wavelength band λ4 may be in contact as shown in Figure 13, or they may partially overlap, although this is not shown. The fourth wavelength band λ4 is shifted to a longer wavelength than the third wavelength band λ3.

[0091] When the light-receiving surface 231 has a first region A1, a second region A2, a third region A3, and a fourth region A4, as shown in Figure 14, the switching mechanism 225 switches the state of the optical path 221 between the first state, the second state, and the third state, thereby enabling the acquisition of images in 12 different wavelength bands. From among the images in the 12 different wavelength bands, at least one of the first mark Dm and the second mark Wm can be detected using the image with less thin-film interference and higher clarity. Note that the wavelength band in which thin-film interference occurs varies depending on the type of device of the die D or substrate W. According to this embodiment, even if the type of device of the die D or substrate W changes, the image with higher clarity can be used from among the images in the 12 different wavelength bands.

[0092] As shown in Figure 15, the control circuit 190 simultaneously images at least one of the first mark Dm and the second mark Wm in, for example, the first region A1, the second region A2, the third region A3, and the fourth region A4. Images of four different wavelength bands can be captured simultaneously. The control circuit 190 also captures images of 12 different wavelength bands in three passes by switching the state of the optical path 221 between the first, second, and third states. The control circuit 190 then selects an image with low thin-film interference and high clarity from the images of the 12 different wavelength bands. Clarity is evaluated by contrast, etc. The control circuit 190 also stores the conditions for obtaining a high-clarity image. The conditions for obtaining a high-clarity image include the location of the region where a high-clarity image can be obtained and the state of the optical path 221.

[0093] Next, as shown in Figure 16, the control circuit 190 images the entirety of at least one of the first mark Dm and the second mark Wm in one of the first region A1, second region A2, third region A3, and fourth region A4. The imaging conditions are those that yield a high-resolution image. The conditions for obtaining a high-resolution image are determined by the type of device on the die D or substrate W. Therefore, if the type of device on the die D or substrate W is the same, it is not necessary to image images in all 12 wavelength bands each time. For example, it is sufficient to image images in all 12 wavelength bands only during the first production run of a manufacturing lot.

[0094] As described above, the bonding apparatus 60 of this embodiment has the following configurations (1a) to (1c). (1a) The first filter 232 is provided in the first region A1 of the light-receiving surface 231 and selectively transmits light in the first wavelength band λ1. (1b) The fifth filter 223 selectively transmits light in the fifth A wavelength band λ5A in the middle of the optical path 221. (1c) The fifth A wavelength band λ5A overlaps only with a part λ1b of the first wavelength band λ1.

[0095] The configurations described in (1a) to (1c) above provide the following benefits. The fifth filter 223 narrows the wavelength of light before it strikes the die D or substrate W, thereby suppressing thin-film interference and enabling the capture of clear images. Furthermore, the fifth filter 223 can narrow the wavelength band of light received in the first region A1 compared to the first filter 232, further suppressing thin-film interference and enabling the capture of even clearer images.

[0096] The bonding apparatus 60 of this embodiment has the following configurations in addition to the configurations (1a) to (1c) above: (2a) The second filter 233 is provided in the second region A2 of the light-receiving surface 231 and selectively transmits light in the second wavelength band λ2. (2b) The first wavelength band λ1 and the second wavelength band λ2 are different. (2c) The fifth wavelength band λ5A overlaps only with a part λ1b of the first wavelength band λ1 and only with a part λ2a of the second wavelength band λ2.

[0097] The configurations described in (2a) to (2c) above provide the following benefits: Images of different wavelength bands can be acquired in the first region A1 and the second region A2. Using a single fifth A wavelength band λ5A, the wavelength bands of light received in the two regions, specifically the first region A1 and the second region A2, can be narrowed. Therefore, the number of transmission wavelength bands of the fifth filter 223 can be reduced, and the structure of the fifth filter 223 can be simplified.

[0098] In addition to the configurations described in (1a) to (1c) and (2a) to (2b) above, the bonding apparatus 60 of this embodiment has the following configuration (3). (3) The first wavelength band λ1 and the second wavelength band λ2 are continuously connected. According to the configuration of (3) above, it is possible to prevent the occurrence of unobtainable wavelength bands between the first wavelength band λ1 and the second wavelength band λ2.

[0099] In addition to the configurations described in (1a) to (1c) above, the bonding apparatus 60 of this embodiment has the following configurations: (4a) The third filter 234 is provided in the third region A3 of the light-receiving surface 231 and selectively transmits light in the third wavelength band λ3. (4b) The first wavelength band λ1 and the third wavelength band λ3 are different. (4c) The fifth filter 223 selectively transmits light in the fifth B wavelength band λ5B in the middle of the optical path 221. (4d) The fifth B wavelength band λ5B is separate from the fifth A wavelength band λ5A and overlaps only with a part of the third wavelength band λ3b.

[0100] The configurations described in (4a) to (4d) above provide the following benefits: Images of different wavelength bands can be acquired in the first region A1 and the third region A3. Using one fifth filter 223, the wavelength bands of light received in at least two regions, specifically the first region A1 and the third region A3, can be narrowed. Compared to the third filter 234, the fifth filter 223 can narrow the wavelength band of light received in the third region A3, further suppressing thin-film interference and enabling the acquisition of sharper images.

[0101] Furthermore, the configurations described in (4a) to (4d) above can be combined with at least one of the configurations described in (2a) to (2c) and (3).

[0102] The bonding apparatus 60 of this embodiment has the following configurations in addition to the configurations (1a) to (1c) above: (5a) The third filter 234 is provided in the third region A3 of the light-receiving surface 231 and selectively transmits light in the third wavelength band λ3. (5b) The fourth filter 235 is provided in the fourth region A4 of the light-receiving surface 231 and selectively transmits light in the fourth wavelength band λ4. (5c) The first wavelength band λ1, the third wavelength band λ3, and the fourth wavelength band λ4 are different from each other. (5d) The fifth filter 223 selectively transmits light in the fifth B wavelength band λ5B in the middle of the optical path 221. (5e) The fifth B wavelength band λ5B is separate from the fifth A wavelength band λ5A and overlaps only with a part λ3b of the third wavelength band λ3 and only with a part λ4a of the fourth wavelength band λ4.

[0103] The configurations (5a) to (5e) above provide the following benefits: Images of different wavelength bands can be acquired in the first region A1, the third region A3, and the fourth region A4. One fifth filter 223 can be used to narrow down the wavelength bands of light received in at least three regions, specifically the first region A1, the third region A3, and the fourth region A4. One fifth B wavelength band λ5B can be used to narrow down the wavelength bands of light received in two regions, specifically the third region A3 and the fourth region A4. Therefore, the number of transmission wavelength bands of the fifth filter 223 can be reduced, and the structure of the fifth filter 223 can be simplified.

[0104] Furthermore, the configurations described in (5a) to (5e) above can be combined with at least one of the configurations described in (2a) to (2c), (3) above, and (4a) to (4d) above.

[0105] The bonding apparatus 60 of this embodiment has the following configuration (6) in addition to the configurations described in (1a) to (1c) and (5a) to (5e) above. (6) The third wavelength band λ3 and the fourth wavelength band λ4 are continuously connected. According to the configuration of (6) above, it is possible to prevent the occurrence of an unobtainable wavelength band between the third wavelength band λ3 and the fourth wavelength band λ4.

[0106] Furthermore, the configuration of (6) described above can be combined with at least one of the configurations described in (2a) to (2c), (3) and (4a) to (4d).

[0107] In addition to the configurations described in (1a) to (1c) above, the bonding device 60 of this embodiment has the following configuration (7). (7) The switching mechanism 225 switches the state of the optical path 221 between a first state and a second state. The first state is when the fifth filter 223 is retracted from the optical path 221. The second state is when the fifth filter 223 is inserted into the optical path 221.

[0108] According to the configuration described in (7) above, the following effects can be obtained. By switching the state of the optical path 221 between the first state and the second state, the wavelength band of light received in one first region A1 can be narrowed or broadened. Narrowing the wavelength band can suppress thin-film interference. On the other hand, broadening the wavelength band can increase the amount of light received.

[0109] Furthermore, the configuration of (7) above can be combined with at least one of the configurations of (2a) to (2c), (3), (4a) to (4d), (5a) to (5e), ​​and (6).

[0110] In addition to the configurations described in (1a) to (1c) above, the bonding apparatus 60 of this embodiment has the following configurations: (8a) The sixth filter 224 selectively transmits light in the sixth A wavelength band λ6A in the middle of the optical path 221. (8b) The sixth A wavelength band λ6A is in a different band from the fifth A wavelength band λ5A and overlaps only with a part of the first wavelength band λ1a. (8c) The switching mechanism 225 switches the state of the optical path 221 between a first state, a second state, and a third state. The first state is when the fifth filter 223 and the sixth filter 224 are retracted from the optical path 221. The second state is when the fifth filter 223 is inserted into the optical path 221 and the sixth filter 224 is retracted from the optical path 221. The third state is one in which the fifth filter 223 is retracted from the optical path 221 and the sixth filter 224 is inserted into the optical path 221.

[0111] The configurations described in (8a) to (8c) above provide the following benefits: By switching the state of the optical path 221 between the first, second, and third states, images of three different wavelength bands can be captured in the first region A1. By narrowing the wavelength band, thin-film interference can be suppressed. On the other hand, by widening the wavelength band, the amount of light received can be increased.

[0112] Furthermore, the configurations described in (8a) to (8c) above can be combined with at least one of the configurations described in (2a) to (2c), (3), (4a) to (4d), (5a) to (5e), ​​(6), and (7).

[0113] In addition to the configurations described in (1a) to (1c) above, the bonding apparatus 60 of this embodiment has the following configurations: (9a) The second filter 233 is provided in the second region A2 of the light-receiving surface 231 and selectively transmits light in the second wavelength band λ2. (9b) The third filter 234 is provided in the third region A3 of the light-receiving surface 231 and selectively transmits light in the third wavelength band λ3. (9c) The first wavelength band λ1, the second wavelength band λ2, and the third wavelength band λ3 are different from each other. (9d) The fifth A wavelength band λ5A overlaps only with a part of the first wavelength band λ1b and only with a part of the second wavelength band λ2a. (9e) The fifth filter 223 selectively transmits light in the fifth B wavelength band λ5B in the middle of the optical path 221. (9f) The fifth B wavelength band λ5B is separate from the fifth A wavelength band λ5A and overlaps only with a part of the third wavelength band λ3b. (9g) The sixth filter 224 selectively transmits light from the sixth B wavelength band λ6B in the middle of the optical path 221. (9h) The sixth B wavelength band λ6B overlaps only with a part of the second wavelength band λ2b in a different band than the fifth A wavelength band λ5A, and overlaps only with a part of the third wavelength band λ3a in a different band than the fifth B wavelength band λ5B. (9i) The switching mechanism 225 switches the state of the optical path 221 between the first state, the second state, and the third state. The first state is when the fifth filter 223 and the sixth filter 224 are moved out of the optical path 221. The second state is when the fifth filter 223 is inserted into the optical path 221 and the sixth filter 224 is retracted from the optical path 221. The third state is when the fifth filter 223 is retracted from the optical path 221 and the sixth filter 224 is inserted into the optical path 221.

[0114] The configurations of (9a), (9c), and (9d) above are the same as the configurations of (2a) to (2c), and therefore the same effects as the configurations of (2a) to (2c) can be obtained. Also, the configurations of (9b), (9c), (9e), and (9f) above are the same as the configurations of (4a) to (4d), and therefore the same effects as the configurations of (4a) to (4d) can be obtained. Furthermore, the configurations of (9g) to (9i) above provide the following effects: Using one sixth B wavelength band λ6B, the wavelength band of light received in two regions, specifically the second region A2 and the third region A3, can be narrowed. Therefore, the number of transmission wavelength bands of the sixth filter 224 can be reduced, and the structure of the sixth filter 224 can be simplified. By switching the state of the optical path 221 between the first state, the second state, and the third state, images of at least nine different wavelength bands can be captured.

[0115] Furthermore, the configurations described in (9a) to (9i) above can be combined with at least one of the configurations described in (2a) to (2c), (3), (4a) to (4d), (5a) to (5e), ​​(6), (7), and (8a) to (8c).

[0116] The bonding apparatus 60 of this embodiment has the following configurations in addition to the configurations (1a) to (1c) above: (10a) The third filter 234 is provided in the third region A3 and selectively transmits light in the third wavelength band λ3. (10b) The fourth filter 235 is provided in the fourth region A4 and selectively transmits light in the fourth wavelength band λ4. (10c) The first wavelength band λ1, the third wavelength band λ3, and the fourth wavelength band λ4 are different from each other. (10d) The fifth filter 223 selectively transmits light in the fifth B wavelength band λ5B in the middle of the optical path 221. (10e) The fifth B wavelength band λ5B is separate from the fifth A wavelength band λ5A and overlaps only with a part of the third wavelength band λ3b and only with a part of the fourth wavelength band λ4a. (10f) The sixth filter 224 selectively transmits light in the sixth C wavelength band λ6C in the middle of the optical path 221. (10g) The sixth C wavelength band λ6C is in a different band from the fifth B wavelength band λ5B and overlaps only with a part of the fourth wavelength band λ4b. (10h) The switching mechanism 225 switches the state of the optical path 221 between the first state, the second state, and the third state. The first state is when the fifth filter 223 and the sixth filter 224 are retracted from the optical path 221. The second state is when the fifth filter 223 is inserted into the optical path 221 and the sixth filter 224 is retracted from the optical path 221. The third state is when the fifth filter 223 is retracted from the optical path 221 and the sixth filter 224 is inserted into the optical path 221.

[0117] Since the configurations (10a) to (10e) above are the same as the configurations (5a) to (5e) above, the same effects as the configurations (5a) to (5e) above can be obtained. Furthermore, the configurations (10f) to (10h) above can be used to obtain the following effects. By switching the state of the optical path 221 between the first state, the second state and the third state, images of three different wavelength bands can be captured in the fourth region A4. By narrowing the wavelength band, thin-film interference can be suppressed. On the other hand, by widening the wavelength band, the amount of light received can be increased.

[0118] Furthermore, the configurations described in (10a) to (10e) above can be combined with at least one of the configurations described in (2a) to (2c), (3), (4a) to (4d), (5a) to (5e), ​​(6), (7), (8a) to (8c), and (9a) to (9i).

[0119] The bonding apparatus 60 of this embodiment has the following configurations in addition to the configurations (1a) to (1c) above: (11a) The second filter 233 is provided in the second region A2 of the light-receiving surface 231 and selectively transmits light in the second wavelength band λ2. (11b) The third filter 234 is provided in the third region A3 of the light-receiving surface 231 and selectively transmits light in the third wavelength band λ3. (11c) The fourth filter 235 is provided in the fourth region A4 of the light-receiving surface 231 and selectively transmits light in the fourth wavelength band λ4. (11d) The first wavelength band λ1, the second wavelength band λ2, the third wavelength band λ3, and the fourth wavelength band λ4 are all different from each other. (11e) The fifth wavelength band λ5A overlaps only with a part λ1b of the first wavelength band λ1 and only with a part λ2a of the second wavelength band λ2. (11f) The fifth filter 223 selectively transmits light in the fifth B wavelength band λ5B in the middle of the optical path 221. (11g) The fifth B wavelength band λ5B is separate from the fifth A wavelength band λ5A and overlaps only with a part of the third wavelength band λ3b, and only with a part of the fourth wavelength band λ4a. (11h) The sixth filter 224 selectively transmits light in the sixth A wavelength band λ6A, the sixth B wavelength band λ6B, and the sixth C wavelength band λ6C in the middle of the optical path 221. (11i) The sixth A wavelength band λ6A, the sixth B wavelength band λ6B, and the sixth C wavelength band λ6C are separate from each other. (11j) The sixth A wavelength band λ6A is in a different band than the fifth A wavelength band λ5A and overlaps only with a part of the first wavelength band λ1a. (11k) The 6th B wavelength band λ6B overlaps with only a part of the 2nd wavelength band λ2, λ2b, in a different band from the 5th A wavelength band λ5A, and overlaps with only a part of the 3rd wavelength band λ3, λ3a, in a different band from the 5th B wavelength band λ5B. (11l) The 6th C wavelength band λ6C overlaps with only a part of the 4th wavelength band λ4, λ4b, in a different band from the 5th B wavelength band λ5B. (11m) The switching mechanism 225 switches the state of the optical path 221 between the first state, the second state, and the third state. The first state is when the 5th filter 223 and the 6th filter 224 are retracted from the optical path 221. The second state is when the 5th filter 223 is inserted into the optical path 221 and the 6th filter 224 is retracted from the optical path 221. The third state is one in which the fifth filter 223 is retracted from the optical path 221 and the sixth filter 224 is inserted into the optical path 221.

[0120] Since the configurations (11a) to (11m) above are the same as the configurations (8a) to (8c), (9a) to (9i), and (10a) to (10h), the same effects as the configurations (8a) to (8c), (9a) to (9i), and (10a) to (10h) above can be obtained.

[0121] Furthermore, the configurations described in (11a) to (11m) above can be combined with at least one of the configurations described in (2a) to (2c), (3), (4a) to (4d), (5a) to (5e), ​​(6), and (7).

[0122] While embodiments of the joining apparatus and joining method described above have been explained, this disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also naturally fall within the technical scope of this disclosure.

[0123] This application claims priority based on Japanese Patent Application No. 2024-232859, filed with the Japan Patent Office on December 27, 2024, and the entire contents of Japanese Patent Application No. 2024-232859 are incorporated herein by reference.

[0124] 60 Bonding device 170 First detection unit 210 Light source 220 Optical system 221 Optical path 223 Fifth filter 224 Sixth filter 230 Camera 231 Light receiving surface 232 First filter 233 Second filter 234 Third filter 235 Fourth filter D Die Dm First mark E Carrier W Substrate Wm Second mark

Claims

1. A bonding apparatus that aligns a plate-like body and a substrate based on the relative positions of a first mark on a plate-like body and a second mark on a substrate, and joins the plate-like body and the substrate, comprising a first detection unit that detects at least one of the first mark and the second mark, the first detection unit comprising a light source that generates light, an optical system that forms an optical path for irradiating the plate-like body or the substrate with the light generated by the light source, and a camera that receives reflected light from the light irradiated by the optical system, the camera comprising a light-receiving surface including a first region and a first filter provided in the first region that selectively transmits light in a first wavelength band, the optical system comprising a fifth filter that selectively transmits light in a fifth A wavelength band in the middle of the optical path, and the fifth A wavelength band overlapping only with a part of the first wavelength band, the bonding apparatus.

2. The bonding apparatus according to claim 1, wherein the light-receiving surface includes a first region and a second region which are distinct from each other, the camera has a second filter provided in the second region which selectively transmits light of a second wavelength band, the first wavelength band and the second wavelength band are different, and the 5A wavelength band overlaps with only a part of the first wavelength band and overlaps with only a part of the second wavelength band.

3. The bonding apparatus according to claim 2, wherein the first wavelength band and the second wavelength band are continuously connected.

4. The bonding apparatus according to claim 1, wherein the light-receiving surface includes a first region and a third region which are distinct from each other, the camera has a third filter provided in the third region which selectively transmits light in a third wavelength band, the first wavelength band and the third wavelength band are different, the fifth filter selectively transmits light in a fifth B wavelength band in the middle of the optical path, the fifth B wavelength band is separate from the fifth A wavelength band and overlaps with only a part of the third wavelength band.

5. The bonding apparatus according to claim 1, wherein the light-receiving surface includes a first region, a third region, and a fourth region that are distinct from each other, the camera has a third filter provided in the third region that selectively transmits light of a third wavelength band, and a fourth filter provided in the fourth region that selectively transmits light of a fourth wavelength band, the first wavelength band, the third wavelength band, and the fourth wavelength band are distinct from each other, the fifth filter selectively transmits light of a fifth B wavelength band in the middle of the optical path, the fifth B wavelength band is separate from the fifth A wavelength band and overlaps with only a part of the third wavelength band and only a part of the fourth wavelength band.

6. The bonding apparatus according to claim 5, wherein the third wavelength band and the fourth wavelength band are continuously connected.

7. The bonding apparatus according to claim 1, wherein the optical system has a switching mechanism for switching the state of the optical path between a first state in which the fifth filter is retracted from the optical path and a second state in which the fifth filter is inserted into the optical path.

8. The bonding apparatus according to claim 1, wherein the optical system has a sixth filter that selectively transmits light in the 6A wavelength band in the middle of the optical path, the 6A wavelength band is in a different band from the 5A wavelength band and overlaps with only a part of the first wavelength band, and the optical system has a switching mechanism for switching the state of the optical path between a first state in which the fifth filter and the sixth filter are retracted from the optical path, a second state in which the fifth filter is inserted into the optical path and the sixth filter is retracted from the optical path, and a third state in which the fifth filter is retracted from the optical path and the sixth filter is inserted into the optical path.

9. The light-receiving surface includes a first region, a second region, and a third region that are different from each other, the camera has a second filter provided in the second region that selectively transmits light of a second wavelength band, and a third filter provided in the third region that selectively transmits light of a third wavelength band, the first wavelength band, the second wavelength band, and the third wavelength band are different from each other, the 5A wavelength band overlaps with only a part of the first wavelength band and with only a part of the second wavelength band, the fifth filter selectively transmits light of a 5B wavelength band in the middle of the optical path, the 5B wavelength band is separate from the 5A wavelength band and overlaps with only a part of the third wavelength band, the optical system has a sixth filter that selectively transmits light of a 6B wavelength band in the middle of the optical path, the 6B wavelength band overlaps with only a part of the second wavelength band in a different band from the 5A wavelength band and overlaps with only a part of the third wavelength band in a different band from the 5B wavelength band, The bonding apparatus according to claim 1, wherein the optical system has a switching mechanism for switching the state of the optical path between a first state in which the fifth filter and the sixth filter are retracted from the optical path, a second state in which the fifth filter is inserted into the optical path and the sixth filter is retracted from the optical path, and a third state in which the fifth filter is retracted from the optical path and the sixth filter is inserted into the optical path.

10. The light-receiving surface includes a first region, a third region, and a fourth region that are different from each other, the camera has a third filter provided in the third region that selectively transmits light in the third wavelength band, and a fourth filter provided in the fourth region that selectively transmits light in the fourth wavelength band, the first wavelength band, the third wavelength band, and the fourth wavelength band are different from each other, the fifth filter selectively transmits light in the fifth B wavelength band in the middle of the optical path, the fifth B wavelength band is separate from the fifth A wavelength band and overlaps with only a part of the third wavelength band and only a part of the fourth wavelength band, the optical system has a sixth filter that selectively transmits light in the sixth C wavelength band in the middle of the optical path, the sixth C wavelength band is in a different band from the fifth B wavelength band and overlaps with only a part of the fourth wavelength band, The bonding apparatus according to claim 1, wherein the optical system has a switching mechanism for switching the state of the optical path between a first state in which the fifth filter and the sixth filter are retracted from the optical path, a second state in which the fifth filter is inserted into the optical path and the sixth filter is retracted from the optical path, and a third state in which the fifth filter is retracted from the optical path and the sixth filter is inserted into the optical path.

11. The light-receiving surface includes a first region, a second region, a third region, and a fourth region that are distinct from each other, the camera has a second filter provided in the second region that selectively transmits light of the second wavelength band, a third filter provided in the third region that selectively transmits light of the third wavelength band, and a fourth filter provided in the fourth region that selectively transmits light of the fourth wavelength band, the first wavelength band, the second wavelength band, the third wavelength band, and the fourth wavelength band are distinct from each other, the fifth A wavelength band overlaps with only a part of the first wavelength band and only a part of the second wavelength band, the fifth filter selectively transmits light of the fifth B wavelength band in the middle of the optical path, the fifth B wavelength band is separate from the fifth A wavelength band and overlaps with only a part of the third wavelength band and only a part of the fourth wavelength band, and the optical system has a sixth filter that selectively transmits light of the sixth A wavelength band, the sixth B wavelength band, and the sixth C wavelength band in the middle of the optical path. The bonding apparatus according to claim 1, wherein the 6A wavelength band, the 6B wavelength band, and the 6C wavelength band are separated from each other, the 6A wavelength band overlaps with only a part of the 1st wavelength band in a different band from the 5A wavelength band, the 6B wavelength band overlaps with only a part of the 2nd wavelength band in a different band from the 5A wavelength band, and also overlaps with only a part of the 3rd wavelength band in a different band from the 5B wavelength band, and the 6C wavelength band overlaps with only a part of the 4th wavelength band in a different band from the 5B wavelength band, and the optical system has a switching mechanism for switching the state of the optical path between a first state in which the 5th filter and the 6th filter are retracted from the optical path, a second state in which the 5th filter is inserted into the optical path and the 6th filter is retracted from the optical path, and a third state in which the 5th filter is retracted from the optical path and the 6th filter is inserted into the optical path.

12. The bonding apparatus according to claim 11, wherein the first region, the second region, the third region, and the fourth region are separated by two virtual straight lines that intersect at the center of the light-receiving surface.

13. A bonding method for bonding the plate-like body to the substrate using a bonding apparatus according to any one of claims 1 to 12.

14. A bonding method for bonding the plate-shaped body to a substrate using the bonding apparatus described in claim 7, wherein at least one of the first mark and the second mark is imaged in the first region in both the first state and the second state.

15. A bonding method for bonding a plate-shaped body to a substrate using a bonding apparatus according to any one of claims 8 to 10, wherein at least one of the first mark and the second mark is imaged in the first region in each of the first, second, and third states.

16. A bonding method for bonding a plate-like body to a substrate using the bonding apparatus described in claim 11 or 12, wherein at least one of the first mark and the second mark is imaged in the first region, the second region, the third region, and the fourth region, in the first state, the second state, and the third state, respectively.

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