Glass plate, supporting glass substrate, layered body, method for manufacturing layered body, and method for manufacturing semiconductor package

Abstract

Provided is a supporting glass substrate which has a specific thermal expansion coefficient and few glass defects. Disclosed is a supporting glass substrate for supporting a processed substrate, wherein: a glass composition thereof contains, in mol%, 60-75% of SiO2, 5-20% of Al2O3, 1-10% of B2O3, 1-8% of MgO, 1-4.9% of CaO, 0-5.4% of SrO, and 0-3.6% of BaO; and an average thermal expansion coefficient is 35×10-7 / °C or less in the temperature range of 20°C to 260°C.

Description

Glass plate, supporting glass substrate, laminate, method for manufacturing the laminate, and method for manufacturing a semiconductor package

[0001] This invention relates to a glass plate, and more particularly to a suitable support glass substrate for use in semiconductor packages. It also relates to a laminate using this support glass substrate, a method for manufacturing the same, and a method for manufacturing a semiconductor package.

[0002] In recent years, the semiconductor device field has seen advancements in device integration density and miniaturization. Consequently, there is a growing demand for packaging technologies for highly integrated devices.

[0003] Packaging technology is used, for example, in portable electronic devices such as smartphones, notebook computers, and PDAs (Personal Data Assistance), as well as in fan-out type WLP (Wafer Level Package) and PLP (Panel Level Package), and CoWoS (Chip on Wafer on Substrate) for AI (Artificial Intelligence) and HPC (High-Performance Computing) applications.

[0004] Furthermore, in recent years, packaging technology is being adopted for high-density mounting, such as 3D packages that combine WLP, PLP, or CoWoS with SoIC (System on Integrated Chips). Hereafter, in this specification, WLP and PLP will be collectively referred to as WLP, etc.

[0005] The manufacturing process for these packages includes, for example, arranging multiple semiconductor chips on a support glass substrate, molding them with a resin encapsulant to form a processed substrate, and then wiring one surface of the processed substrate, forming solder bumps, and so on.

[0006] In the manufacturing process of these semiconductor packages, a technique is required to bond, for example, a silicon wafer or interposer to a glass plate, and this glass plate is required to act as a support glass substrate. Specifically, the support glass substrate is bonded to the silicon substrate via a release layer such as resin, and the silicon substrate is embedded in the resin. Subsequently, by irradiating with ultraviolet light, the support glass substrate and the resin-embedded silicon substrate are separated.

[0007] However, if the thermal expansion coefficients of the support glass substrate and the silicon substrate are mismatched, the difference in thermal expansion coefficients between them may cause the support glass substrate to warp. In particular, the smaller the thickness of the support glass substrate, the more likely it is to warp (see Patent Document 1).

[0008] Japanese Patent Application Publication No. 2022-27842

[0009] To match the thermal expansion coefficients of the support glass substrate and the silicon substrate, the support glass substrate has an average thermal expansion coefficient of 35 × 10⁻¹⁰ at 20 to 260°C. －７ In some cases, a temperature of / ℃ or lower may be required.

[0010] However, the average thermal expansion coefficient of glass at 20-260°C is 35 × 10⁻⁶ －７ Designing the glass composition to lower the temperature to a certain level may increase the likelihood of glass defects. More specifically, crystalline impurities may precipitate more easily from the glass, becoming defects within the glass, and these defects may lead to a decrease in the glass's mechanical strength. Additionally, the amount of residual bubbles in the glass may increase, becoming defects within the glass, and these defects may also lead to a decrease in the glass's mechanical strength.

[0011] The present invention has been made in view of the above circumstances, and its technical problem is to provide a support glass substrate that has a predetermined coefficient of thermal expansion and has few glass defects.

[0012] As a result of diligent efforts and repeated studies, the inventors have found that the above technical problems can be solved by strictly regulating the glass composition range of the glass plate, particularly the alkaline earth oxides contained in the glass, and propose this as the present invention.

[0013] In other words, the support glass substrate of embodiment 1 is a support glass substrate for supporting a processed substrate, and the glass composition is SiO2 in mol%. ２ 60-75%, Al ２ O ３ 5-20%, B ２ O ３ It contains 1-10% of MgO, 1-8% of CaO, 1-4.9% of SrO, and 0-3.6% of BaO, and has an average thermal expansion coefficient of 35 × 10 in the temperature range of 20°C to 260°C. －７ It is characterized by being less than or equal to / °C. Here, the "average thermal expansion coefficient in the temperature range of 20°C to 260°C" is the value measured with a dilatometer.

[0014] In the support glass substrate of Embodiment 2, it is preferable that the glass composition has a molar ratio of MgO / CaO greater than 1 to 3. Here, "MgO / CaO" refers to the value obtained by dividing the MgO content by the CaO content.

[0015] In Embodiment 3, the supporting glass substrate preferably has a glass composition in which the molar ratio of CaO / SrO is greater than 1 to 3, as in Embodiment 1 or Embodiment 2. Here, "CaO / SrO" refers to the value obtained by dividing the CaO content by the SrO content.

[0016] In the support glass substrate of Embodiment 4, in any one embodiment from Embodiments 1 to 3, the glass composition preferably has a molar ratio of SrO / BaO of 1 to 3. Here, "SrO / BaO" refers to the value obtained by dividing the SrO content by the BaO content.

[0017] In the support glass substrate of Embodiment 5, in any one embodiment from Embodiments 1 to 4, it is preferable that the glass composition has a molar ratio of MgO / (MgO + CaO + SrO + BaO) of 0.3 to 0.5. Here, "MgO / (MgO + CaO + SrO + BaO)" refers to the value obtained by dividing the MgO content by the total amount of MgO, CaO, SrO, and BaO.

[0018] In the support glass substrate of embodiment 6, in any one embodiment from embodiment 1 to embodiment 5, it is preferable that the glass composition has a Cl content of 0.05 to 0.5% in mol%.

[0019] In any one of Aspects 1 to 6, the support glass substrate of Aspect 7 has, as a glass composition, SnO in mol%. ２ and Fe ２ O ３ The total amount of is preferably 0.1% or less.

[0020] In any one of Aspects 1 to 7, the support glass substrate of Aspect 8 has, as a glass composition, a molar ratio of Cl / (SnO ２ + Cl + Fe ２ O ３ ) of 0.1 to 1 is preferable. Here, "Cl / (SnO ２ + Cl + Fe ２ O ３ )" means the value obtained by dividing the content of Cl by the total amount of SnO ２ , Cl, and Fe ２ O ３ .

[0021] In any one of Aspects 1 to 8, the support glass substrate of Aspect 9 has, as a glass composition, a content of alkali metal oxide of preferably 0.1 mol% or less.

[0022] In any one of Aspects 1 to 9, the support glass substrate of Aspect 10 preferably has a Young's modulus of 70 GPa or more. Here, the "Young's modulus" refers to the value measured by the bending resonance method.

[0023] In any one of Aspects 1 to 10, the support glass substrate of Aspect 11 preferably has a liquid-phase viscosity of 10 ３．５ dPa·s or more. Here, the "liquid-phase viscosity" is the viscosity at the liquid-phase temperature, which is measured by the platinum ball pulling-up method. The "liquid-phase temperature" can be calculated by putting glass powder that passes through a standard sieve of 30 mesh (500 μm) and remains on a 50 mesh (300 μm) sieve into a platinum boat and then holding it in a temperature gradient furnace for 24 hours to measure the temperature at which crystals precipitate or phase separation occurs. Note that the liquid-phase viscosity is an index of formability, and the higher the liquid-phase viscosity, the better the formability. Also, it becomes possible to suppress the precipitation of crystalline foreign matter during molding.

[0024] The support glass substrate of embodiment 12 is, in any one embodiment from embodiment 1 to embodiment 11, a high-temperature viscosity 10 ２．５ It is preferable that the temperature at dPa·s is 1650°C or lower. Here, "10 ２．５ The temperature at dPa·s is measured using the platinum ball pulling method. ２．５ The temperature in dPa·s corresponds to the melting temperature. The lower this temperature, the better the meltability, and the more effectively it is possible to suppress the precipitation of undissolved crystalline foreign matter from the molten glass during melting.

[0025] In embodiment 13, the support glass substrate preferably has a transmittance of 10% or more, including reflection loss at 254 nm, when calculated at a thickness of 1 mm, in any one embodiment from embodiment 1 to embodiment 12.

[0026] In embodiment 14, the support glass substrate preferably has a transmittance of 25% or more, including reflection loss at 254 nm, when calculated at a thickness of 1 mm, in any one embodiment from embodiment 1 to embodiment 13.

[0027] The support glass substrate of embodiment 15 preferably has a wafer shape with a diameter of 100 to 500 mm, a plate thickness of less than 2.0 mm, an overall plate thickness deviation (TTV) of 5 μm or less, and a warpage of 60 μm or less, in any one embodiment of embodiments 1 to 14.

[0028] The support glass substrate of embodiment 16 preferably has a substantially rectangular shape with at least one side measuring 300 mm or more, a plate thickness of less than 2.0 mm, an overall plate thickness deviation (TTV) of 5 μm or less, and a warp of 60 μm or less, in any one embodiment of embodiments 1 to 14.

[0029] The support glass substrate of embodiment 17 is preferably used as a support for a fan-out type wafer-level package or a fan-out type panel-level package in any one embodiment from embodiment 1 to embodiment 16.

[0030] The support glass substrate of embodiment 18 is preferably used as a support for backgrinding semiconductors in any one embodiment from embodiment 1 to embodiment 17.

[0031] The laminate of embodiment 19 preferably comprises at least a processed substrate and a support glass substrate of embodiment 17 for supporting the processed substrate.

[0032] The laminate of embodiment 20 preferably comprises, in embodiment 19, at least a semiconductor chip molded with a encapsulating material.

[0033] The manufacturing method for the laminate according to embodiment 21 preferably comprises the steps of: preparing a support glass substrate according to embodiment 17; preparing a processed substrate; and stacking the support glass substrate and the processed substrate to obtain a laminate.

[0034] The semiconductor package manufacturing method of embodiment 22 preferably comprises the steps of preparing the laminate of embodiment 19 and performing a processing treatment on the processed substrate.

[0035] The semiconductor package manufacturing method of embodiment 23 preferably includes a step of wiring on one surface of the processed substrate in embodiment 22.

[0036] In the semiconductor package manufacturing method of embodiment 24, it is preferable that the processing step in embodiment 23 includes a step of forming solder bumps on one surface of the processed substrate.

[0037] The glass plate of embodiment 25 has a glass composition of SiO in mol%. ２ 60-75%, Al ２ O ３ 5-20%, B ２ O ３ It contains 1-10% MgO, 1-8% CaO, 1-4.9% SrO, 0-5.4% BaO, with a molar ratio of MgO / CaO greater than 1, a molar ratio of CaO / SrO greater than 1, and a molar ratio of SrO / BaO greater than or equal to 1, and has an average thermal expansion coefficient of 35 × 10 in the temperature range of 20°C to 260°C. －７It is characterized by being a glass plate with a temperature of 0°C or less. Here, "MgO / CaO" refers to the value obtained by dividing the MgO content by the CaO content, "CaO / SrO" refers to the value obtained by dividing the CaO content by the SrO content, and "SrO / BaO" refers to the value obtained by dividing the SrO content by the BaO content. The average thermal expansion coefficient in the temperature range of 20°C to 260°C is the value measured with a dilatometer.

[0038] According to the present invention, it is possible to provide a support glass substrate that has a predetermined coefficient of thermal expansion and has few glass defects.

[0039] The supporting glass substrate of the present invention has a glass composition of SiO in mol%. ２ 60-75%, Al ２ O ３ 5-20%, B ２ O ３ It is characterized by containing 1-10% of MgO, 1-8% of CaO, 0-4.9% of SrO, and 0-3.6% of BaO. The reasons for limiting the content of each component as described above are shown below. In the description of the content of each component, percentages represent mole percent unless otherwise specified. Also, unless otherwise stated, numerical ranges indicated using "~" in this specification mean a range that includes the numerical values ​​before and after "~" as the minimum and maximum values, respectively.

[0040] SiO ２ SiO is the main component that forms the framework of glass and significantly reduces the average coefficient of thermal expansion. It is also a component that increases Young's modulus and acid resistance. However, SiO ２ If the content is too high, the high-temperature viscosity increases, which reduces melting and moldability, leading to the precipitation of crystalline foreign matter, as well as the precipitation of devitrified crystals such as cristobalite, and the liquidus temperature tends to rise. Therefore, SiO ２ The content is 60-75%, preferably 61-74%, 62-73%, 63-72%, and particularly preferably 64-71%.

[0041] Al ２ O ３It is a component that forms the glass skeleton and is a component that lowers the average coefficient of thermal expansion. It is also a component that increases Young's modulus. However, Al ２ O ３ If the content is too high, crystals such as mullite will precipitate, and the liquid phase viscosity will easily decrease. Also, borosilicate glass (B ２ O ３ -SiO ２ In a glass system, the glass becomes more prone to phase separation. Therefore, Al ２ O ３ The content is 5-20%, preferably 6-18%, 7-16%, and particularly preferably 8-15%.

[0042] B ２ O ３ It is a component that forms the glass skeleton and enhances meltability and devitrification resistance. Specifically, B ２ O ３ This component enhances meltability by reducing the viscosity of the molten glass during melting. As a result, it has the effect of removing bubbles during melting, and by reducing the number of residual bubbles, which are glass defects, in the resulting glass, it is possible to improve the mechanical strength of the glass while reducing the scattering of light transmitted through the glass by residual bubbles. However, B ２ O ３ If the content is too high, the average coefficient of thermal expansion tends to increase unduly. Also, the Young's modulus tends to decrease. Furthermore, thermal stability decreases, and there is a risk that the glass will be more prone to phase separation. Therefore, B ２ O ３ The content is 1 to 10%, preferably 1 to 9.8%, 1 to 9.5%, 1 to 9%, 1 to 7.3%, 2 to 7%, 3 to 6.5%, and particularly preferably 4 to 6%.

[0043] MgO is a component that significantly increases Young's modulus among alkaline earth metal oxides. However, if the MgO content is too high, crystalline foreign matter tends to precipitate, and the average coefficient of thermal expansion tends to increase. In addition, thermal stability decreases, and there is a risk that the glass will easily separate into phases. Therefore, the MgO content is preferably 1 to 8%, more preferably 1 to 7.5%, 2 to 7.5%, 3 to 7.5%, 4 to 7%, and particularly preferably 5 to 7%.

[0044] CaO is a component that increases Young's modulus and suppresses phase separation of glass. However, if the CaO content is too high, crystalline foreign matter tends to precipitate easily, and the average coefficient of thermal expansion tends to increase unduly. In addition, thermal stability decreases, and crystals such as anorthite tend to precipitate easily. Therefore, the CaO content is preferably 1 to 4.9%, more preferably 2 to 4.4%, 2.5 to 4%, and particularly preferably 3 to 4%.

[0045] SrO is a component that enhances devitrification resistance and lowers high-temperature viscosity, thereby increasing meltability. It also enhances thermal stability and suppresses phase separation of the glass. However, if the SrO content is too high, the average coefficient of thermal expansion tends to increase unduly, and the balance of the glass composition is disrupted, leading to a decrease in devitrification resistance. Therefore, the SrO content is preferably 0 to 5.4%, more preferably 0.5 to 5%, 1 to 4.5%, and particularly preferably 1.5 to 4%.

[0046] BaO is a component that enhances devitrification resistance and improves the moldability of glass. It also enhances thermal stability and suppresses phase separation of glass. However, if the BaO content is too high, the average coefficient of thermal expansion tends to increase unduly. Therefore, the BaO content is preferably 0 to 3.6%, more preferably 0.1 to 3%, 0.2 to 2.5%, and particularly preferably 0.5 to 2%.

[0047] The molar ratio of MgO / CaO is preferably greater than 1 to 3, 1.1 to 2.9, 1.2 to 2.7, and particularly preferably 1.3 to 2.5. If the molar ratio of MgO / CaO is smaller than the above range, the Young's modulus decreases, thermal stability decreases, and crystalline foreign matter is more likely to precipitate. On the other hand, if the molar ratio of MgO / CaO is larger than the above range, thermal stability decreases, and glass phase separation is more likely to occur.

[0048] The molar ratio of CaO / SrO is preferably greater than 1 to 3, 1.1 to 2.9, 1.2 to 2.7, and particularly preferably 1.2 to 2.5. If the molar ratio of CaO / SrO is smaller than the above range, the Young's modulus decreases, and thermal stability decreases, making it easier for glass phase separation to occur. On the other hand, if the molar ratio of CaO / SrO is larger than the above range, thermal stability decreases, and crystalline foreign matter is more likely to precipitate.

[0049] The molar ratio of SrO / BaO is preferably 1 to 3, 1.1 to 2.9, 1.2 to 2.7, and particularly preferably 1.3 to 2.5. If the molar ratio of SrO / BaO falls below the above range, the coefficient of thermal expansion increases significantly. On the other hand, if the molar ratio of SrO / BaO rises above the above range, thermal stability decreases and phase separation of the glass becomes more likely.

[0050] The molar ratio MgO / (MgO+CaO+SrO+BaO) is preferably 0.3 to 0.5, and particularly preferably 0.35 to 0.45. If the molar ratio MgO / (MgO+CaO+SrO+BaO) is smaller than the above range, the Young's modulus decreases, thermal stability decreases, and crystalline foreign matter is more likely to precipitate. On the other hand, if the molar ratio MgO / (MgO+CaO+SrO+BaO) is larger than the above range, thermal stability decreases, and glass phase separation is more likely to occur.

[0051] In addition to the above-mentioned components, other components may be introduced as optional components. From the viewpoint of effectively enjoying the effects of the present invention, the content of these other components is preferably 15% or less, 10% or less, and particularly 5% or less in total.

[0052] Alkali metal oxides (Li ２ O, Na ２ O and K ２ O) is a component that enhances melting properties. However, if the alkali metal oxide content is too high, the average coefficient of thermal expansion increases significantly, and the average coefficient of thermal expansion from 20°C to 260°C becomes 35 × 10⁻⁶. －７ The temperature easily exceeds / °C. Furthermore, alkali metal oxides are components that, during glass melting, unduly lower the electrical resistance of the molten glass, resulting in the generation of bubbles in the molten glass. This makes the melted and molded glass more likely to contain residual bubbles, potentially reducing the production efficiency of the glass substrate, as well as lowering the mechanical strength, weather resistance, and transmittance of the glass substrate. Therefore, the alkali metal oxide content (Li... ２ O, Na ２ O and K ２ The total amount of O is preferably 0.1% or less.

[0053] Li ２O is a component that enhances solubility. However, Li ２ If the oxygen content is too high, the coefficient of thermal expansion tends to increase significantly. Also, Li ２ O is a component that, during glass melting, unduly lowers the electrical resistance of the molten glass, resulting in the generation of bubbles in the molten glass. This makes the molten and molded glass more likely to contain residual bubbles, which not only reduces the production efficiency of the glass substrate but also tends to decrease the mechanical strength, weather resistance, and transmittance of the glass substrate. Therefore, Li ２ The oxygen content is preferably 0.1% or less.

[0054] Na ２ O is a component that enhances solubility. However, Na ２ If the O content is too high, the coefficient of thermal expansion tends to increase significantly. Also, Na ２ O is a component that, during glass melting, unduly lowers the electrical resistance of the molten glass, resulting in the generation of bubbles in the molten glass. This makes the molten and molded glass more likely to contain residual bubbles, which not only reduces the production efficiency of the glass substrate but also tends to decrease the mechanical strength, weather resistance, and transmittance of the glass substrate. Therefore, Na ２ The oxygen content is preferably 0.1% or less.

[0055] K ２ O is a component that enhances melting properties. However, K ２ If the O content is too high, the coefficient of thermal expansion tends to increase significantly. Also, K ２ O is a component that, during glass melting, unduly lowers the electrical resistance of the molten glass, resulting in the generation of bubbles in the molten glass. This makes the molten and molded glass more likely to contain residual bubbles, which not only reduces the production efficiency of the glass substrate but also tends to decrease the mechanical strength, weather resistance, and transmittance of the glass substrate. Therefore, K ２ The oxygen content is preferably 0.1% or less.

[0056] ZrO ２ It is a component that enhances weather resistance and Young's modulus. However, ZrO ２ If the content is too high, the glass will be more prone to devitrification. Also, ZrO ２Since the raw materials used are generally poorly soluble, there is a risk that undissolved crystalline foreign matter may be mixed into the glass. Therefore, ZrO ２ The content is preferably 0-10%, 0-7%, 0-5%, 0-3%, 0-1%, and especially 0-0.1%.

[0057] ZnO is a component that significantly improves meltability and moldability by lowering high-temperature viscosity, and also enhances weather resistance. However, if the ZnO content is too high, thermal stability decreases, and phase separation of the glass becomes significantly more likely. Therefore, the ZnO content is preferably 0-3%, 0-2%, 0-1%, and especially 0-0.1%.

[0058] P ２ O ５ It is a component that forms the skeleton of glass and can suppress the precipitation of devitrified crystals. However, P ２ O ５ If the content of P is too high, the weather resistance of the glass will decrease, its thermal stability will decrease, and the glass will become more prone to phase separation. Therefore, P ２ O ５ The content of is preferably 0-15%, 0-10%, 0-5%, 0-2.5%, 0-1.5%, 0-0.5%, and particularly preferably 0-0.3%.

[0059] SnO ２ It is a component that has a good clarifying effect in the high-temperature range and is also a component that reduces viscosity at high temperatures. However, SnO ２ If the content is too high, SnO ２ Devitrified crystals are more likely to precipitate, and there is a risk that the ultraviolet transmittance will decrease. Therefore, SnO ２ The content of is preferably 0-2%, 0.001-1%, 0.01-0.9%, 0.02-0.8%, 0.03-0.7%, and particularly preferably 0.03-0.6%.

[0060] Cl is a component that promotes the melting of glass. Specifically, it can lower the melting temperature and promote the clarification effect. As a result, it is a component that contributes to reducing the melting cost and extending the life of the glass manufacturing furnace. However, if the Cl content is too high, there is a risk of corroding the metal parts around the glass manufacturing furnace. Therefore, the Cl content is preferably 0.05 - 0.5%, 0.08 - 0.4%, particularly 0.1 - 0.3%.

[0061] Fe ２ O <---- ３ can be introduced as an impurity component or a clarifying agent component. However, if the content of Fe ２ O ３ is too high, there is a risk of reducing the ultraviolet transmittance. That is, if the content of Fe ２ O ３ is too high, it becomes difficult to properly perform the adhesion and desorption between the processed substrate and the support glass substrate through the resin layer and the release layer. Therefore, the content of Fe ２ O [[ID=--->18]] ３ is preferably 0 - 0.05%, 0 - 0.03%, 0 - 0.02%, 0 - 0.01%, 0 - 0.005%, particularly 0.0001 - 0.003%. Note that "Fe ２ O ３ " in the present invention includes divalent iron oxide and trivalent iron oxide, and the divalent iron oxide is converted to Fe ２ O ３ for handling. The same applies to other oxides, which are handled based on the indicated oxides.

[0062] When Cl, which is a clarifying agent component, is contained, the total amount of SnO ２ and Fe ２ O ３ that may reduce the ultraviolet transmittance of the clarifying agent component is preferably 0.01 - 0.1%. By regulating in this way, it is possible to achieve both a high clarification effect and avoid a decrease in the ultraviolet transmittance.

[0063] The molar ratio Cl / (SnO ２ + Cl + Fe ２ O ３The molar ratio of Cl / (SnO) is preferably 0.1 to 1, 0.2 to 0.9, 0.3 to 0.8, and particularly 0.4 to 0.75. ２ +Cl+Fe ２ O ３ If the above range is maintained, it becomes possible to obtain effective clarity while avoiding a decrease in ultraviolet transmittance. Furthermore, by lowering the melting temperature, the viscosity of the glass melt is reduced, which facilitates bubble release during melting, reduces the number of residual bubbles in the resulting glass, and improves the mechanical strength of the glass.

[0064] TiO ２ It is a component that lowers high-temperature viscosity and increases meltability, as well as a component that suppresses solarization. However, TiO ２ Introducing large amounts of TiO can easily cause the glass to become colored and its transmittance to decrease. ２ The content is preferably 0-5%, 0-3%, 0-1%, and particularly 0-0.02%.

[0065] MoO ３ Mo is a component that can be introduced as an impurity or a phase separation suppressing component. Mo is also a component that can be contained in the electrode in the melting process, and MoO is produced by electric melting heating. ３ It leaches out and is incorporated into the molten glass. However, MoO ３ When a large amount is introduced, the transmittance tends to decrease. Therefore, MoO ３ The content of is preferably 0-0.01%, 0-0.007%, 0-0.006%, 0-0.004%, and particularly preferably 0-0.002%.

[0066] WO ３ These are components that can be introduced as impurities or phase-separation inhibitors. Also, WO ３ WO is a component that can be contained in the electrodes during the melting process, and is produced by electric melting heating. ３ It leaches out and is incorporated into the molten glass. However, WO ３ When a large amount is introduced, the transmittance tends to decrease. Therefore, WO ３The content of is preferably 0-0.03%, 0.0001-0.02%, 0.001-0.01%, 0.001-0.007%, 0.001-0.006%, 0.001-0.004%, and particularly preferably 0.001-0.003%.

[0067] Furthermore, MoO in glass ３ and WO ３ When the content is the same, it has equivalent effects from the standpoint of phase separation suppression, but the transmittance, especially the transmittance in the deep ultraviolet region at 254 nm, is WO ３ MoO ３ It does not decrease further. Therefore, from the viewpoint of transmittance, WO ３ MoO ３ It is preferable.

[0068] Y ２ O ３ , Nb ２ O ５ La ２ O ３ These components have the effect of increasing the strain point, Young's modulus, etc. However, if the content of each of these components exceeds 1%, and especially 5%, there is a risk that raw material costs and product costs will skyrocket.

[0069] As a clarifying agent, ２ O ３ Sb ２ O ３ While these components are effective, from an environmental standpoint, it is preferable to reduce them as much as possible. ２ O ３ Sb ２ O ３ The respective content amounts are preferably 1% or less, 0.5% or less, 0.1% or less, and especially 0.05% or less.

[0070] SO ３ SO is a component that has a clarifying effect. However, SO ３ If the content is too high, SO ２ Reboil is more likely to occur. Therefore, SO ３ The content of is preferably 0-1%, 0-0.5%, 0-0.1%, and especially 0-0.01%.

[0071] Furthermore, as long as the glass properties are not impaired, metal powders such as F, C, Al, or Si may be introduced as clarifying agents up to about 1% each. ２ While it is possible to introduce these materials at concentrations of up to about 1%, care must be taken to avoid a decrease in ultraviolet light transmittance.

[0072] The supporting glass substrate of the present invention is characterized by having the following glass properties.

[0073] The average coefficient of thermal expansion in the temperature range of 20°C to 260°C is 35 × 10⁻⁶. －７ The temperature is below / ℃, preferably 34 × 10 －７ / ℃ or below, 33 x 10 －７ / ℃ or lower, especially 32 × 10 －７ It is preferable that the coefficient of thermal expansion is less than or equal to 10°C. If the average coefficient of thermal expansion in the temperature range of 20°C to 260°C falls outside the above range, it becomes difficult to match it with the coefficient of thermal expansion of the silicon substrate, and dimensional changes (especially warping deformation) of the glass substrate are more likely to occur. The lower limit of the average coefficient of thermal expansion in the temperature range of 20°C to 260°C is not particularly limited, but for example, 20 × 10°C －７ It is above / ℃.

[0074] Furthermore, the supporting glass substrate of the present invention preferably has the following glass properties.

[0075] The Young's modulus is preferably 70 GPa or higher, 72 GPa or higher, 75 GPa or higher, and particularly preferably 77 GPa or higher. If the Young's modulus is too low, the rigidity of the resulting laminate tends to decrease after the Si chips are attached to the glass substrate. Also, when the adhesive is spin-coated onto the glass substrate, the glass substrate tends to shift position. There is no particular upper limit to the Young's modulus, but for example, it is 150 GPa or lower, and particularly preferably 130 GPa or lower.

[0076] The supporting glass substrate of the present invention is preferably not a crystallized glass in which crystals have precipitated from the glass. When crystals precipitate from the glass, areas with locally high or low mechanical strength may occur, which may result in a decrease in the mechanical strength of the glass. In addition, the precipitated crystals may scatter transmitted light, which may reduce the transmittance described later.

[0077] The liquid phase viscosity is 10 ３．５dPa·s or higher, 10 ４．６ dPa·s or higher, 10 ４．７ dPa·s or higher, especially 10 ５．０ It is preferable that the viscosity is dPa·s or higher. This makes it less likely for crystalline foreign matter to precipitate during molding, thus facilitating the molding of glass substrates by the down-draw method, especially the overflow down-draw method. The upper limit of the liquid phase viscosity is not particularly limited, but for example, 10 8．０ It may also be set to dPa·s or less.

[0078] High temperature viscosity 10 ２．５ The temperature in dPa·s is preferably 1650°C or lower, 1640°C or lower, 1630°C or lower, 1600°C or lower, 1580°C or lower, and especially 1560°C or lower. 10 ２．５ As the temperature at dPa·s increases, meltability decreases, and the manufacturing cost of the glass substrate increases. More specifically, crystalline foreign matter is more likely to precipitate from the molten glass during melting, which may reduce the mechanical strength and transmittance of the resulting support glass substrate, making it unsuitable as a support glass substrate. High-temperature viscosity 10 ２．５ The lower limit of the temperature in dPa·s is not particularly limited, but it may be, for example, 1000°C or higher, and especially 1050°C or higher.

[0079] The transmittance, including reflection loss at 254 nm (calculated at a thickness of 1 mm), is preferably 10% or more, 20% or more, 25% or more, 30% or more, and particularly 40% or more. If the transmittance, including reflection loss at 254 nm (calculated at a thickness of 1 mm), is too low, it becomes difficult to apply to cover glass for ultraviolet LED packages or support glass substrates used to support processed substrates for semiconductor packages. The upper limit of the transmittance, including reflection loss at 254 nm (calculated at a thickness of 1 mm), is not particularly limited, but may be, for example, 99.9% or less, 99% or less, 98% or less, and particularly 95% or less.

[0080] The transmittance, including reflection loss at 350 nm (calculated at a thickness of 1 mm), is preferably 70% or higher, 75% or higher, 80% or higher, 85% or higher, and particularly 90% or higher. If the transmittance, including reflection loss at 354 nm (calculated at a thickness of 1 mm), is too low, it becomes difficult to apply to cover glass for ultraviolet LED packages or support glass substrates used to support processed substrates for semiconductor packages. The upper limit of the transmittance, including reflection loss at 350 nm (calculated at a thickness of 1 mm), is not particularly limited, but may be, for example, 99.9% or lower, 99% or lower, and particularly 98% or lower.

[0081] The glass substrate of the present invention can be applied to support glass substrates used to support processed substrates for semiconductor packages. Furthermore, the glass substrate of the present invention can also be applied to precision components that require extremely small thickness deviations relative to their thickness, such as support substrates for backgrinding. Preferred shapes will be described below.

[0082] The plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1 mm or less, and especially 0.9 mm or less. As the plate thickness decreases, the mass of the laminate decreases, improving handling. On the other hand, if the plate thickness is too thin, the strength of the support glass substrate itself decreases, making it difficult to perform its function as a support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and especially greater than 0.7 mm.

[0083] The overall plate thickness deviation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, and particularly preferably 0.1 to less than 1 μm. The arithmetic mean roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, 1 nm or less, and particularly preferably 0.5 nm or less. The lower limit of the arithmetic mean roughness Ra is not particularly limited, but may be, for example, 0.1 nm or more. The higher the surface accuracy, the easier it is to improve the accuracy of the processing. In particular, the wiring accuracy can be improved, making high-density wiring possible. In addition, the strength of the support glass substrate is improved, making the support glass substrate and laminate less prone to breakage. Furthermore, the number of times the support glass substrate can be reused can be increased. The "arithmetic mean roughness Ra" can be measured by a stylus-type surface roughness meter or an atomic force microscope (AFM).

[0084] Furthermore, it is preferable that the support glass substrate is formed by the overflow downdraw method and then its surface is polished. This makes it easier to control the overall plate thickness deviation (TTV) to less than 2 μm, 1.5 μm or less, 1 μm or less, and especially to less than 0.1 to 1 μm.

[0085] The amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 to 45 μm, and especially 5 to 40 μm. The smaller the amount of warpage, the easier it is to improve the precision of the processing. In particular, it is possible to improve the accuracy of the wiring, which enables high-density wiring.

[0086] The supporting glass substrate is preferably formed by a down-draw method, particularly an overflow down-draw method. The overflow down-draw method is a method of manufacturing a glass substrate by allowing molten glass to overflow from both sides of a heat-resistant trough-shaped structure, and then stretching and forming the overflowed molten glass downwards while it converges at the lower top end of the trough-shaped structure. In the overflow down-draw method, the surface that will become the surface of the glass substrate does not come into contact with the trough-shaped refractory material and is formed as a free surface. As a result, the overall thickness deviation (TTV) can be reduced to less than 2 μm, particularly less than 1 μm, with only a small amount of polishing. Consequently, the manufacturing cost of the glass substrate can be reduced.

[0087] The support glass substrate of the present invention is preferably untreated with ion exchange and preferably does not have a compressive stress layer on its surface. Since ion exchange treatment significantly increases the manufacturing cost of the support glass substrate, omitting it allows for a reduction in manufacturing costs. Furthermore, ion exchange treatment makes it difficult to reduce the overall thickness deviation (TTV) of the support glass substrate; therefore, omitting ion exchange treatment makes it easier to resolve such problems. However, the present invention does not exclude the possibility of the support glass substrate undergoing ion exchange treatment and forming a compressive stress layer on its surface. From the viewpoint of increasing mechanical strength, it is preferable to perform ion exchange treatment and form a compressive stress layer on the surface.

[0088] The supporting glass substrate is preferably in wafer form, with a diameter of 100 to 500 mm, and particularly preferably 150 to 450 mm. This makes it easier to apply to the manufacturing process of fan-out type WLP and CoWoS.

[0089] The supporting glass substrate can be rectangular. This makes it easier to apply to the manufacturing processes of fan-out type PLPs and CoWoS.

[0090] The following describes a laminate when applied to a support glass substrate used to support a processed substrate for semiconductor packages.

[0091] The laminate comprises at least a processed substrate and a support glass substrate used to support the processed substrate, characterized in that the support glass substrate is the support glass substrate described above. Furthermore, it is preferable that the processed substrate comprises at least a semiconductor chip molded with a encapsulating material. A glass substrate satisfying the above configuration has a high Young's modulus, making it easier to maintain the rigidity of the laminate and suppressing the occurrence of deformation, warping, breakage, etc. of the processed substrate. Therefore, the laminate of the present invention can suppress a decrease in the reliability of the processing of the processed substrate.

[0092] The laminate preferably has an adhesive layer between the processed substrate and the support glass substrate. The adhesive layer is preferably made of resin, such as a thermosetting resin or a photocurable resin (especially an ultraviolet curing resin). It is also preferable that the adhesive layer has heat resistance to withstand the heat treatment in the manufacturing process of fan-out type WLP, PLP, and CoWoS. This makes it less likely for the adhesive layer to melt during the manufacturing process of fan-out type WLP, PLP, and CoWoS, thereby improving the accuracy of the processing. In addition, an ultraviolet curing tape can be used as the adhesive layer to easily fix the processed substrate and the support glass substrate.

[0093] Preferably, the laminate further has a release layer between the processed substrate and the support glass substrate, or more specifically, between the processed substrate and the adhesive layer, or between the support glass substrate and the adhesive layer. This makes it easier to peel the processed substrate from the support glass substrate after it has undergone a predetermined processing treatment. From the viewpoint of productivity, it is preferable to peel the processed substrate using irradiation light such as ultraviolet laser light.

[0094] The delamination layer is composed of a material that undergoes "intralayer delamination" or "interfacial delamination" when irradiated with light such as laser light. In other words, it is composed of a material that, when irradiated with light of a certain intensity, causes the interatomic or intermolecular bonding forces at the atoms or molecules to disappear or decrease, resulting in ablation and delamination. In addition, when irradiated with light, the components contained in the delamination layer may be released as a gas, leading to separation, or the delamination layer may absorb light and become a gas, and the vapor may be released, leading to separation.

[0095] In a laminate, it is preferable that the support glass substrate is larger than the processed substrate. This makes it less likely for the edges of the processed substrate to protrude from the support glass substrate, even if the centers of the processed substrate and the support glass substrate are slightly separated when supporting them.

[0096] The method for manufacturing the laminate is characterized by comprising the steps of preparing the support glass substrate, preparing the processed substrate, and stacking the support glass substrate and the processed substrate to obtain a laminate. This makes it possible to manufacture a laminate that can suppress a decrease in the reliability of the processing of the processed substrate.

[0097] A semiconductor package manufacturing method is characterized by comprising the steps of preparing the above-mentioned laminate and performing a processing treatment on the processed substrate. In other words, the semiconductor package manufacturing method of the present invention is characterized by comprising the steps of preparing at least a processed substrate and a support glass substrate used to support the processed substrate and performing a processing treatment on the processed substrate, wherein the support glass substrate is the above-mentioned support glass substrate.

[0098] The semiconductor package manufacturing method preferably further includes a step of transporting the laminate. This can improve the processing efficiency of the processing. Note that the "step of transporting the laminate" and the "step of performing processing on the processed substrate" do not need to be performed separately, but may be performed simultaneously.

[0099] In the semiconductor package manufacturing method of the present invention, the processing steps are preferably a process of wiring on one surface of the processed substrate, or a process of forming solder bumps on one surface of the processed substrate. In the semiconductor package manufacturing method of the present invention, the processed substrate is less likely to change dimensions during these processes, so these steps can be carried out properly.

[0100] In addition to the above, the processing treatment may also include mechanically polishing one surface of the processed substrate (usually the surface opposite to the support glass substrate), dry etching one surface of the processed substrate (usually the surface opposite to the support glass substrate), or wet etching one surface of the processed substrate (usually the surface opposite to the support glass substrate). Furthermore, in the semiconductor package manufacturing method of the present invention, warping of the processed substrate is less likely to occur, and the rigidity of the laminate can be maintained. As a result, the above processing treatment can be performed properly.

[0101] Furthermore, because the support glass substrate of the present invention has a low coefficient of thermal expansion and high mechanical strength due to the low number of glass defects, it is not limited to support glass substrates and can be applied to glass plates for general applications. For example, it is suitable as a glass plate used in ultraviolet light-emitting diodes (LEDs), photodetector encapsulation packages, ultraviolet light-emitting lamps, liquid crystal displays, organic EL displays, and information recording media.

[0102] The present invention will be described below based on examples. Note that the following examples are merely illustrative. The present invention is not limited in any way to the following examples.

[0103] Tables 1 to 14 show examples of the present invention (samples No. 1 to 96) and comparative examples (samples No. 97 and 98).

[0104]

[0105]

[0106]

[0107]

[0108]

[0109]

[0110]

[0111]

[0112]

[0113]

[0114]

[0115]

[0116]

[0117]

[0118] First, glass batches prepared with glass raw materials to match the glass composition shown in the table were placed in a platinum crucible and melted at 1400-1700°C for 3-24 hours. During the melting of the glass batches, a platinum stirrer was used to stir and homogenize them. Next, the molten glass was poured onto a carbon plate, formed into a plate shape, and then slowly cooled to 30°C at a rate of 3°C / min starting at a temperature approximately 20°C higher than the expected annealing point.

[0119] For each obtained sample, the density, average thermal expansion coefficient in the temperature range of 20 to 260°C, Young's modulus, glass transition temperature, flexing point, strain point, slow cooling point, softening point, transmittance including reflection loss at 350 nm when calculated for a thickness of 1 mm, transmittance including reflection loss at 254 nm when calculated for a thickness of 1 mm, and high-temperature viscosity 10 ４．０ Temperature and high-temperature viscosity at dPa·s 10 ３．０ Temperature and high-temperature viscosity at dPa·s 10 ２．５ Temperature and high-temperature viscosity at dPa·s 10 ２．０ Temperature, liquidus temperature, liquidus viscosity (logη), and presence or absence of glass defects were evaluated at dPa·s.

[0120] The density was measured using the well-known Archimedes method.

[0121] The average thermal expansion coefficient in the temperature range of 20 to 260°C is the value measured with a dilatometer.

[0122] Young's modulus is a value measured using the resonance method.

[0123] The glass transition temperature, flexion point, strain point, annealing point, and softening point were measured according to the ASTM C336 method.

[0124] The transmittance, including reflection loss at 350 nm (calculated at a thickness of 1 mm), is a value including reflection loss measured using a double-beam spectrophotometer. The measurement samples used were those polished to an optically polished (mirror) surface on both sides. Furthermore, the surface roughness Ra of the glass surface of these measurement samples was measured by AFM and was found to be 0.5–1.0 nm in a measurement area of ​​5 μm × 5 μm.

[0125] The transmittance, including reflection loss at 254 nm (calculated at a thickness of 1 mm), is the value including reflection loss measured using a double-beam spectrophotometer. The sample used for measurement had both sides polished to an optically polished (mirror) surface. Furthermore, the surface roughness Ra of the glass surface of these sampled specimens was measured by AFM and was found to be 0.5–1.0 nm in a measurement area of ​​5 μm × 5 μm.

[0126] High temperature viscosity 10 ４．０ dPa·s, 10 ３．０ dPa·s, 10 ２．５ dPa·s and 10 ２．０ The temperature in dPa·s was measured using the platinum ball pulling method.

[0127] The liquidus temperature was measured by microscopic observation of the temperature at which crystals precipitated after the glass powder, which had passed through a standard 30-mesh (500 μm) sieve and remained in a 50-mesh (300 μm) sieve, was placed in a platinum boat and held in a temperature gradient furnace for 24 hours. The liquidus viscosity logη was measured using the platinum ball pulling method to determine the viscosity of the glass at the liquidus temperature.

[0128] The presence or absence of glass defects was evaluated by observing crystalline foreign matter and residual bubbles. Specifically, crystalline foreign matter was evaluated by observing five arbitrary locations (10 mm x 10 mm each) on the obtained glass surface using an optical microscope (50x magnification). If one or more crystalline foreign matter were present, it was evaluated as "present," and if no crystalline foreign matter were present, it was evaluated as "absent." Residual bubbles were evaluated by visually observing five arbitrary locations (10 mm x 10 mm each) on the obtained glass. If there were zero residual bubbles with a maximum length of 2 mm or more, it was judged as "○," if there were 1 to 3, it was judged as "△," and if there were 4 or more, it was judged as "×." If the residual bubble evaluation was "○" or "△," it was judged that there were no problems with the actual product, and if it was "×," it was judged that there were problems with the actual product.

[0129] As is clear from the table, samples No. 1 to 96 have an average thermal expansion coefficient of 35 × 10⁻⁶. －７ Despite being below 1 / °C, no glass defects were observed. On the other hand, samples No. 97 and No. 98 had an average thermal expansion coefficient of 35 × 10⁻⁶. －７The temperature was above / °C, and glass defects were confirmed. Based on the above, it was determined that samples No. 1 to 96 are suitable as support glass substrates, while samples No. 97 and No. 98 are unsuitable as support glass substrates.

[0130] In the above embodiment, molten glass was poured out to form a flat plate shape. However, when producing on an industrial scale, it is preferable to form the flat plate shape using an overflow down-draw method or the like, and then polish both surfaces.

[0131] The glass of the present invention is suitable for use as a support glass substrate in semiconductor packages and as a support glass substrate for semiconductor backgrinding. Furthermore, the glass of the present invention is suitable for use as a glass substrate in, for example, ultraviolet light-emitting diodes (LEDs), photodetector encapsulation packages, ultraviolet light-emitting lamps, liquid crystal displays, organic EL displays, and information recording media.

Claims

1. A support glass substrate for supporting a processed substrate, wherein the glass composition is SiO2 in mol%. ２ 60-75%, Al ２ O ３ 5-20%, B ２ O ３ It contains 1-10% of MgO, 1-8% of CaO, 1-4.9% of SrO, and 0-3.6% of BaO, and has an average thermal expansion coefficient of 35 × 10 in the temperature range of 20°C to 260°C. －７ A supporting glass substrate that is below / ℃.

2. The support glass substrate according to claim 1, wherein the glass composition has a molar ratio of MgO / CaO greater than 1 to 3.

3. The support glass substrate according to claim 1 or 2, wherein the glass composition has a molar ratio of CaO / SrO greater than 1 to 3.

4. The support glass substrate according to claim 1 or 2, wherein the glass composition has a molar ratio of SrO / BaO of 1 to 3.

5. The support glass substrate according to claim 1 or 2, wherein the glass composition has a molar ratio of MgO / (MgO + CaO + SrO + BaO) of 0.3 to 0.

5.

6. The support glass substrate according to claim 1 or 2, wherein the glass composition has a Cl content of 0.05 to 0.5% in mol%.

7. As a glass composition, in mol%, SnO ２ and Fe ２ O ３ The support glass substrate according to claim 1 or 2, wherein the total amount of is 0.1% or less.

8. As for the glass composition, the molar ratio is Cl / (SnO ２ +Cl+Fe ２ O ３ A support glass substrate according to claim 1 or 2, wherein the ratio is 0.1 to 1.

9. The support glass substrate according to claim 1 or 2, wherein the content of alkali metal oxides in the glass composition is 0.1 mol% or less.

10. The support glass substrate according to claim 1 or 2, wherein the Young's modulus is 70 GPa or higher.

11. Liquid phase viscosity is 10 ３．５ A support glass substrate according to claim 1 or 2, wherein the saturation is dPa·s or higher.

12. High temperature viscosity 10 ２．５ The support glass substrate according to claim 1 or 2, wherein the temperature at dPa·s is 1650°C or less.

13. The support glass substrate according to claim 1 or 2, wherein the transmittance, including reflection loss at 254 nm, is 10% or more when calculated at a thickness of 1 mm.

14. The support glass substrate according to claim 1 or 2, wherein the transmittance, including reflection loss at 254 nm, is 25% or more when calculated at a thickness of 1 mm.

15. A support glass substrate according to claim 1 or 2, having a wafer shape with a diameter of 100 to 500 mm, a plate thickness of less than 2.0 mm, an overall plate thickness deviation (TTV) of 5 μm or less, and a warpage of 60 μm or less.

16. A support glass substrate according to claim 1 or 2, having a substantially rectangular shape with at least one side measuring 300 mm or more, a plate thickness of less than 2.0 mm, an overall plate thickness deviation (TTV) of 5 μm or less, and a warpage of 60 μm or less.

17. A support glass substrate according to claim 1 or 2, used for supporting a fan-out type wafer-level package or a fan-out type panel-level package.

18. A support glass substrate according to claim 1 or 2, used for supporting semiconductor backgrinding.

19. A laminate comprising at least a processed substrate and a support glass substrate for supporting the processed substrate, wherein the support glass substrate is the support glass substrate described in claim 17.

20. The laminate according to claim 19, wherein the processed substrate comprises at least a semiconductor chip molded with a encapsulating material.

21. A method for manufacturing a laminate, comprising the steps of: preparing a support glass substrate as described in claim 17; preparing a processed substrate; and stacking the support glass substrate and the processed substrate to obtain a laminate.

22. A method for manufacturing a semiconductor package, comprising the steps of: preparing a laminate according to claim 19; and performing a processing treatment on the processed substrate.

23. The method for manufacturing a semiconductor package according to claim 22, wherein the processing step includes the step of wiring on one surface of the processed substrate.

24. The method for manufacturing a semiconductor package according to claim 23, wherein the processing step includes forming solder bumps on one surface of the processed substrate.

25. As a glass composition, SiO in mol% ２ 60-75%, Al ２ O ３ 5-20%, B ２ O ３ It contains 1-10% MgO, 1-8% CaO, 1-4.9% SrO, 0-5.4% BaO, with a molar ratio of MgO / CaO greater than 1, a molar ratio of CaO / SrO greater than 1, and a molar ratio of SrO / BaO greater than or equal to 1, and has an average thermal expansion coefficient of 35 × 10 in the temperature range of 20°C to 260°C. －７ A glass plate that is below / ℃.

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