Ceramic structure

Abstract

A ceramic structure according to the present invention has an insulating substrate, an electrode part, a first conductor layer, and a second conductor layer. The insulating substrate is a stack of a plurality of ceramic insulating layers. The electrode part is exposed from the insulating substrate. The first conductor layer is electrically connected to the electrode part. The second conductor layer is electrically connected to the first conductor layer. The first conductor layer and the second conductor layer are positioned inside the insulating substrate on the surface of the same insulating layer. The first conductor layer extends at a substantially uniform thickness. The thickness of the first conductor layer is greater than the thickness of the second conductor layer.

Description

Ceramic structure

[0001] This disclosure relates to ceramic structures.

[0002] For example, a ceramic structure is known that has a disc-shaped insulating substrate made of ceramics and an electrode portion embedded in the insulating substrate, and further includes a heater for heating the insulating substrate and a resistance thermometer for measuring the temperature of the insulating substrate inside the insulating substrate (see Patent Documents 1 to 4).

[0003] Japanese Patent Publication No. 2016-225557, International Publication No. 2021 / 157523, Japanese Patent Publication No. 2023-102415, Japanese Patent Publication No. 2008-243990

[0004] A ceramic structure according to one embodiment includes an insulating substrate, an electrode portion, a first conductor layer, and a second conductor layer. The insulating substrate is formed by laminating a plurality of insulating layers made of ceramics. The electrode portion is exposed from the insulating substrate. The first conductor layer is electrically connected to the electrode portion. The second conductor layer is electrically connected to the first conductor layer. The first and second conductor layers are located on the surface of the same insulating layer and are located inside the insulating substrate. The first conductor layer is stretched to substantially the same thickness. The thickness of the first conductor layer is greater than the thickness of the second conductor layer.

[0005] Figure 1 is a schematic perspective view of the system according to the first embodiment. Figure 2 is a schematic cross-sectional view of the ceramic structure according to the first embodiment. Figure 3 is a schematic enlarged view showing an example of region A shown in Figure 2. Figure 4 is a schematic cross-sectional view taken along the line II-II in Figure 2. Figure 5 is a schematic cross-sectional view showing another example of the ceramic structure according to the first embodiment. Figure 6 is a schematic cross-sectional view showing another example of the ceramic structure according to the first embodiment. Figure 7 is a schematic cross-sectional view showing another example of the ceramic structure according to the first embodiment. Figure 8 is a schematic cross-sectional view showing another example of the ceramic structure according to the first embodiment. Figure 9 is a schematic cross-sectional view showing an example of the ceramic structure according to the second embodiment. Figure 10 is a schematic cross-sectional view showing an example of the ceramic structure according to the second embodiment. Figure 11 is a schematic cross-sectional view showing another example of the ceramic structure according to the second embodiment. Figure 12 is a schematic cross-sectional view of the ceramic structure according to the third embodiment. Figure 13 is a schematic cross-sectional view taken along the line III-III in Figure 12.

[0006] The ceramic structure described above has room for further improvement in terms of enhancing the durability of the wiring that electrically connects the electrode portion and the functional electrode.

[0007] Therefore, there is a need for ceramic structures that can improve the durability of wiring.

[0008] The embodiments for implementing the ceramic structure according to this disclosure (hereinafter referred to as "Embodiments") will be described in detail below with reference to the drawings. Note that the ceramic structure according to this disclosure is not limited by these embodiments. Furthermore, each embodiment can be combined as appropriate, provided that the processing details are not inconsistent. Also, the same parts are denoted by the same reference numerals in each of the following embodiments, and redundant descriptions are omitted.

[0009] Furthermore, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not require strict adherence to "constant," "orthogonal," "perpendicular," or "parallel" conditions. In other words, each of the above expressions allows for deviations such as manufacturing accuracy or installation accuracy.

[0010] Furthermore, the diagrams referenced below are schematic representations for illustrative purposes. Therefore, details may be omitted, and the dimensional ratios do not necessarily correspond to those of reality. Also, in the diagrams referenced below, the vertical upward direction is defined as the Z-axis direction for the sake of clarity.

[0011] [First Embodiment] First, the configuration of the system according to the first embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic perspective view of the system according to the first embodiment. Figure 2 is a schematic cross-sectional view of the ceramic structure according to the first embodiment. Figure 2 is a schematic cross-sectional view taken along the line I-I shown in Figure 1.

[0012] The system 1 shown in Figure 1 heats, for example, semiconductor wafers, quartz wafers, and other wafers (hereinafter simply referred to as "wafers"). For example, system 1 may be mounted on a substrate processing apparatus that performs substrate processing such as plasma processing on wafers.

[0013] As shown in Figure 1, system 1 may have a ceramic structure 2. Also, as shown in Figures 1 and 2, the ceramic structure 2 has an insulating substrate 10, an electrode portion 20, a first conductor layer 30, and a second conductor layer 40.

[0014] The insulating substrate 10 may have a disk shape with a thickness in the vertical (Z-axis direction). Specifically, the insulating substrate 10 may have an upper surface 101 and a lower surface 102 that are circular in plan view, and a side surface 103 that connects the upper surface 101 and the lower surface 102. The upper surface 101 and the lower surface 102 of the insulating substrate 10 may be substantially parallel. The upper surface 101 is an example of the first surface of the insulating substrate 10. The lower surface 102 is an example of the second surface that is the surface on the opposite side of the first surface. For example, a wafer W (see FIG. 2), which is an example of a sample, may be placed on the upper surface 101 of the insulating substrate 10. That is, the upper surface 101 of the insulating substrate 10 may be a support surface for the sample. The planar shape and various dimensions of the insulating substrate 10 may be appropriately set in consideration of the shape and dimensions of the sample, etc.

[0015] The insulating substrate 10 is made of ceramics and has insulating properties. The ceramics constituting the insulating substrate 10 are, for example, sintered bodies mainly composed of aluminum nitride (AlN), aluminum oxide (Al ２ O ３ , alumina), yttrium oxide (Y ２ O ３ ), zirconium oxide (ZrO ２ ), silicon nitride (Si ３ N ４ ), silicon carbide (SiC), etc. may be used. The main component is, for example, a material that occupies 50% by mass or more or 80% by mass or more of the material. When the main component of the insulating substrate 10 is aluminum nitride, the insulating substrate 10 may contain a compound of yttrium (Y). Examples of the Y compound include, for example, YAG (Y ３ Al ５ O １２ ) and Y ２ O ３ .

[0016] Note that the shape of the insulating substrate 10 is arbitrary. For example, the shape of the insulating substrate 10 is circular in plan view, but it is not limited to this, and it may be elliptical, rectangular, trapezoidal, etc. in plan view. Here, an example in the case where the upper surface 101 of the insulating substrate 10 is a uniform flat surface is shown, but, for example, groove portions and steps may be located on the upper surface 101 of the insulating substrate 10.

[0017] The electrode portion 20 is, for example, a power supply terminal for supplying power to the first conductor layer 30. The electrode portion 20 is, for example, a metal having a certain length in the vertical direction. The upper end of the electrode portion 20 may be located inside the insulating substrate 10. The lower end of the electrode portion 20 may be exposed from the insulating substrate 10. The electrode portion 20 may be inserted into, for example, an opening formed in the insulating substrate 10. As shown in the illustrated example, the electrode portion 20 may be exposed from the lower surface 102 of the insulating substrate 10. The shape of the electrode portion 20 is arbitrary. In one embodiment, the electrode portion 20 may have a cylindrical shape. The electrode portion 20 may include, for example, a multi-stage structure of connected vias. The electrode portion 20 may be, for example, a metal such as Ni, W, Mo, and Pt, or an alloy containing at least one of the above metals. The electrode portion 20 may be, for example, a Ni-Co-Fe alloy.

[0018] The first conductor layer 30 is electrically connected to the electrode portion 20. The first conductor layer 30 may, for example, be wiring for supplying power to the second conductor layer 40. The first conductor layer 30 may be a metallic material mainly composed of tungsten, molybdenum, platinum, etc. The first conductor layer 30 may also contain inorganic materials such as glass and / or ceramics. The main component is an element that accounts for 50% or more by mass of the first conductor layer 30.

[0019] The second conductor layer 40 is electrically connected to the first conductor layer 30. The second conductor layer 40 is located inside the insulating substrate 10. Specifically, the second conductor layer 40 is located between the upper surface 101 and the lower surface 102 of the insulating substrate 10. The second conductor layer 40 may be positioned at a certain distance from the side surface 103 of the insulating substrate 10. The second conductor layer 40 may extend in a direction along the upper surface 101.

[0020] The second conductor layer 40 may be, for example, a resistance thermometer. The second conductor layer 40 may be a metal or alloy mainly composed of tungsten, molybdenum, platinum, etc. The second conductor layer 40 may also contain inorganic materials such as glass and / or ceramics.

[0021] The ceramic structure 2 may further have a third conductor layer 50. The third conductor layer 50 is located inside the insulating substrate 10. Specifically, the third conductor layer 50 is located between the upper surface 101 and the lower surface 102 of the insulating substrate 10. The third conductor layer 50 may be located closer to the lower surface 102 than, for example, the second conductor layer 40. The third conductor layer 50 is connected to, for example, a power supply terminal (not shown), and power is supplied to the third conductor layer 50 through the power supply terminal. The third conductor layer 50 may be, for example, a heater.

[0022] Furthermore, the ceramic structure 2 may have a shaft (not shown). The shaft may be connected to the lower surface 102 of the insulating substrate 10. The system 1 may have a control unit (not shown). The control unit may control the power supply in a power supply unit (not shown).

[0023] Furthermore, an RF (radio frequency) electrode for generating plasma may be located inside the insulating substrate 10, above the first conductor layer 30 and the second conductor layer 40. Also, an electrostatic adsorption electrode for holding a wafer W placed on the upper surface 101 may be located inside the insulating substrate 10, above the first conductor layer 30 and the second conductor layer 40.

[0024] System 1 is configured as described above, and the temperature of the insulating substrate 10 may be measured based on the resistance value of the second conductive layer 40 inside the insulating substrate 10, and the heating temperature of the wafer W placed on the upper surface 101 may be adjusted.

[0025] Figure 3 is a schematic enlarged view showing an example of region A shown in Figure 2. Figure 4 is a schematic cross-sectional view taken along the line II-II in Figure 2.

[0026] The first conductor layer 30 is extended, for example, in a direction along the upper surface 101 of the insulating substrate 10 with a substantially uniform thickness. Here, "substantially uniform thickness" means that when the thickness is measured along the extension direction, the rate of change in thickness is within 15%.

[0027] The cross-sectional area of ​​the first conductor layer 30 may be larger than the cross-sectional area of ​​the second conductor layer 40. This allows current to flow more easily because the cross-sectional area of ​​the first conductor layer 30, which is located between the electrode portion 20 and the second conductor layer 40, is larger. As a result, disconnection due to heat generation in the first conductor layer 30 becomes less likely, and the durability of the wiring in the ceramic structure 2 is improved.

[0028] Furthermore, the thickness t0 of the first conductor layer 30 may be greater than the thickness t1 of the second conductor layer 40. This makes the first conductor layer 30, located between the electrode portion 20 and the second conductor layer 40, even less prone to breakage, thereby improving the durability of the wiring in the ceramic structure 2.

[0029] Here, the thickness t0 of the first conductor layer 30 along the Z-axis can be, for example, 3 μm or more and 500 μm or less. The thickness t1 of the second conductor layer 40 along the Z-axis can be, for example, 1 μm or more and 20 μm or less.

[0030] Furthermore, the first conductor layer 30 and the second conductor layer 40 may have the same main component. This further reduces the likelihood of disconnection of the first conductor layer 30 due to differences in thermal expansion between the first conductor layer 30 and the second conductor layer 40. As a result, the durability of the wiring in the ceramic structure 2 is further improved. Note that the first conductor layer 30 and the second conductor layer 40 may have portions with different main components.

[0031] Furthermore, as shown in Figure 4, the widths of the first conductor layer 30 and the second conductor layer 40, viewed from a plan perspective in the Z-axis direction, may be the same.

[0032] Furthermore, the second conductor layer 40 may be, for example, a heater. In this case, the ceramic structure 2 does not need to have a third conductor layer 50. The second conductor layer 40 may function as both a heater and a resistance thermometer. For example, by heating the second conductor layer 40 by passing an alternating current through it, and after passing a predetermined amount of power through it, stopping the alternating current and switching to a direct current to measure the resistance value of the second conductor layer 40, it is possible to confirm whether or not the target temperature has been reached. If the target temperature has not been reached, the alternating current can be passed through the second conductor layer 40 again.

[0033] Figures 5 to 8 are schematic cross-sectional views showing another example of the ceramic structure according to the first embodiment. Figures 5 to 8 correspond to enlarged cross-sectional views of region A shown in Figure 2.

[0034] The second conductor layer may be in contact with a part of the first conductor layer that is close to the first surface. Specifically, as shown in Figure 5, the second conductor layer 40 may be positioned in contact with a part of the first conductor layer 30 that is close to the upper surface 101. This allows, for example, if the second conductor layer 40 is a resistance thermometer, the temperature of the insulating substrate 10 closer to the upper surface 101 can be measured with high accuracy. Also, for example, if the second conductor layer 40 is a heater, the temperature of the insulating substrate 10 closer to the upper surface 101 can be heated with high accuracy.

[0035] Furthermore, when viewed from the first surface in a plan view, a portion of the second conductor layer may overlap with the first conductor layer. Specifically, as shown in Figure 6, when viewed from the Z-axis direction in a plan view, a portion of the second conductor layer 40 may be positioned to overlap with the first conductor layer 30. This allows, for example, the bonding area between the first conductor layer 30 and the second conductor layer 40 to be increased, thereby improving the reliability of the bonding portion between the first conductor layer 30 and the second conductor layer 40.

[0036] Furthermore, the second conductor layer may be bent in the thickness direction. Specifically, as shown in Figures 7 and 8, the second conductor layer 40 may be bent in the Z-axis direction. This increases the degree of freedom in arranging the second conductor layer 40 inside the insulating substrate 10, for example, and improves the design freedom of the ceramic structure 2. In particular, as shown in Figure 8, if the second conductor layer 40 is bent to conform to the shape of the first conductor layer 30, for example, the bonding area between the first conductor layer 30 and the second conductor layer 40 can be increased, further improving the reliability of the bonding portion between the first conductor layer 30 and the second conductor layer 40.

[0037] [Second Embodiment] Figure 9 is a schematic cross-sectional view showing an example of a ceramic structure according to the second embodiment. Figure 10 is a schematic cross-sectional view showing an example of a ceramic structure according to the second embodiment. Figure 9 corresponds to an enlarged cross-sectional view of region A shown in Figure 2. Figure 10 also corresponds to a schematic cross-sectional view taken along the line II-II in Figure 2.

[0038] The second conductor layer 40 may include a conductor layer 41 as a first conductor located on the upper surface 101 side of the insulating substrate 10 shown in FIG. 2, and a conductor layer 42 as a second conductor located on the lower surface 102 side of the conductor layer 41. Thereby, for example, the degree of freedom in arranging the second conductor layer 40 inside the insulating substrate 10 is increased, and the degree of freedom in designing the ceramic structure 2 is improved.

[0039] For the conductor layers 41 and 42, for example, one may be a temperature measuring resistor and the other may be a heater. Also, for the conductor layers 41 and 42, for example, both may be temperature measuring resistors, or both may be heaters.

[0040] For example, when both the conductor layers 41 and 42 are temperature measuring resistors, the conductor layer 41 can measure temperature based on the resistance value measured using the conductor layers 31 and 32 connected to the conductor layer 41 in the first conductor layer 30. Further, the conductor layer 42 can measure temperature based on the resistance value measured using the conductor layers 32 and 33 connected to the conductor layer 42 in the first conductor layer 30. That is, the conductor layer 32 is a wiring shared during temperature measurement by the conductor layers 41 and 42.

[0041] FIG. 11 is a schematic cross-sectional view showing another example of the ceramic structure according to the second embodiment. The second conductor layer 40 may be such that, for example, a part of the conductor layer 41 and the conductor layer 42 arranged side by side in the Z-axis direction are in contact. Since the contact portion of the conductor layer 41 and the conductor layer 42 is larger than the respective thicknesses of the conductor layer 41 and the conductor layer 42, the reliability of the second conductor layer 40 is improved as compared with the case where the conductor layer 41 and the conductor layer 42 are separated.

[0042] Also, the cross-sectional area of the first conductor layer 30 may be larger than the cross-sectional area of the conductor layer 41 and the cross-sectional area of the conductor layer 42. Thereby, it becomes difficult for the first conductor layer 30 located between the electrode portion 20 and the conductor layer 41 and the conductor layer 42 to be disconnected, and the durability of the wiring in the ceramic structure 2 is improved.

[0043] Furthermore, the thickness t10 of the first conductor layer 30 may be greater than the thickness t11 of the conductor layer 41 and the thickness t12 of the conductor layer 42. This makes the first conductor layer 30, which is located between the electrode portion 20 and the second conductor layer 40, even less prone to breakage, thereby improving the durability of the wiring in the ceramic structure 2. The sum of the thickness t11 of the conductor layer 41 and the thickness t12 of the conductor layer 42 may be greater than or less than the thickness t10 of the first conductor layer 30. Also, the thickness t11 of the conductor layer 41 and the thickness t12 of the conductor layer 42 may be the same or different.

[0044] [Third Embodiment] Figure 12 is a schematic cross-sectional view of a ceramic structure according to the third embodiment. Figure 13 is a schematic cross-sectional view taken along the line III-III in Figure 12.

[0045] As shown in Figures 12 and 13, the ceramic structure 2 includes an insulating substrate 10, an electrode portion 20, a first conductor layer 30, and a second conductor layer 40.

[0046] As illustrated in Figures 12 and 13, the first conductor layer 30 may have a conductor layer 332 located in the center of the ceramic structure 2 in a plan view, and conductor layers 331 and 333 located radially apart from the conductor layer 332. The first conductor layer 30 may also further have conductor layers 334 and 335 arranged in a direction perpendicular to the direction in which the conductor layers 331 to 333 are aligned.

[0047] Furthermore, the second conductor layer 40 may have conductor layers 411 and 412 located above the first conductor layer 30, and conductor layers 421 and 422 located above the first conductor layer 30. Conductor layer 411 may have both ends connected to conductor layers 331 and 332, respectively. Conductor layer 412 may have both ends connected to conductor layers 332 and 333, respectively. Conductor layer 421 may have both ends connected to conductor layers 332 and 334, respectively. Conductor layer 422 may have both ends connected to conductor layers 332 and 335, respectively.

[0048] By arranging the first conductor layer 30 and the second conductor layer 40 in this manner, it becomes possible to position the complex pattern of the second conductor layer 40 inside the insulating substrate 10 without providing vias extending in the thickness direction (Z-axis direction) of the insulating substrate 10. This improves the design flexibility of the ceramic structure 2.

[0049] Furthermore, the cross-sectional area of ​​the first conductor layer 30 may be larger than the cross-sectional area of ​​the second conductor layer 40. This makes the first conductor layer 30, which is located between the electrode portion 20 and the second conductor layer 40, less prone to breakage, thereby improving the durability of the wiring in the ceramic structure 2.

[0050] [Method for Manufacturing Ceramic Structures] Next, an example of a method for manufacturing the ceramic structure 2 according to the present disclosure will be described. As an example of a method for manufacturing the ceramic structure 2, a plurality of ceramic green sheets may be prepared and the plurality of ceramic green sheets may be laminated together. Alternatively, a wiring pattern that will become the first conductor layer 30 and a paste-like conductor pattern printed to become the second conductor layer 40 may be laminated together with the laminate of ceramic green sheets. This forms a laminate having a wiring pattern that will become the first conductor layer 30 and a conductor pattern that will become the second conductor layer 40.

[0051] In this case, a gap may be provided between the conductor pattern and the ceramic green sheet, and the conductor pattern may be positioned to straddle this gap. This allows the conductor pattern to bend to fill the gap during shrinkage during firing, thereby forming a curved second conductor layer 40.

[0052] Furthermore, if necessary, a conductor pattern that will become the third conductor layer 50 (heater), electrostatic adsorption electrode, and RF electrode after firing may be provided separately from the above-described process.

[0053] Next, the laminate of the ceramic green sheet and various patterns may be degreased and fired. The firing temperature can be set appropriately according to the composition of the ceramic green sheet and various patterns, but for example, it may be a temperature of 1700°C to 1850°C.

[0054] Subsequently, after firing, holes for inserting the electrode portion 20 may be formed in the laminate, for example by drilling. The electrode portion 20 may then be inserted into the formed holes, and the electrode portion 20 and the first conductor layer 30 may be joined via a bonding material. As the bonding material, for example, a conductive brazing material can be used. This yields the ceramic structure 2 of the present disclosure.

[0055] The electrode portion 20 may be formed by creating through holes in the ceramic green sheet that connect to the first conductor layer 30, filling the through holes with conductive paste, and firing them to form vias, or by inserting a conductor rod into the through holes and firing them simultaneously.

[0056] The ceramic structure 2 of this disclosure can be used, for example, in electrostatic chucks, heaters, and wafer supports for plasma processing that are equipped in semiconductor manufacturing equipment, inspection equipment, etc. Furthermore, the ceramic structure 2 of this disclosure may be used, for example, in RTD (Resistance Temperature Detector) devices in temperature detection equipment.

[0057] In one embodiment, (1) the ceramic structure includes an insulating substrate having a plurality of insulating layers made of ceramics laminated together, an electrode portion exposed from the insulating substrate, a first conductor layer electrically connected to the electrode portion, and a second conductor layer electrically connected to the first conductor layer, wherein the first conductor layer and the second conductor layer are located on the surface of the same insulating layer and are located inside the insulating substrate, the first conductor layer is stretched to substantially the same thickness, and the thickness of the first conductor layer is greater than the thickness of the second conductor layer.

[0058] (2) In the ceramic structure described in (1) above, the cross-sectional area of ​​the first conductor layer may be larger than the cross-sectional area of ​​the second conductor layer.

[0059] (3) In the ceramic structure of (1) or (2) above, the first conductive layer and the second conductive layer may have the same main component.

[0060] (4) In any one of the ceramic structures described in (1) to (3) above, the insulating substrate has a first surface and a second surface opposite to the first surface, and the second conductor layer may be in contact with the first conductor layer at a position close to the first surface.

[0061] (5) In any one of the ceramic structures described in (1) to (3) above, the insulating substrate has a first surface and a second surface opposite to the first surface, and when viewed from the first surface side, a portion of the second conductor layer may overlap with the first conductor layer.

[0062] (6) In any one of the ceramic structures described in (1) to (3) above, the insulating substrate has a first surface and a second surface opposite to the first surface, and the second conductor layer may have a first conductor in contact with the first surface and a second conductor in contact with the second surface.

[0063] (7) In the ceramic structure described in (6) above, the first conductor and the second conductor may be in contact in part.

[0064] (8) In the ceramic structure of (6) or (7) above, one of the first conductor and the second conductor may be a heater and the other a resistance thermometer.

[0065] (9) In any one of the ceramic structures described in (1) to (8) above, the second conductive layer may be bent in the thickness direction.

[0066] Further effects and modifications can be readily derived by those skilled in the art. Therefore, broader aspects of the present invention are not limited to the specific details and representative embodiments expressed and described above. Accordingly, various modifications are possible without departing from the spirit or scope of the overall concept of the invention as defined by the appended claims and their equivalents.

[0067] 2 Ceramic structure 10 Insulating substrate 20 Electrode portion 30 First conductor layer 40 Second conductor layer

Claims

1. A ceramic structure comprising an insulating substrate having a plurality of insulating layers made of ceramics laminated together, an electrode portion exposed from the insulating substrate, a first conductor layer electrically connected to the electrode portion, and a second conductor layer electrically connected to the first conductor layer, wherein the first conductor layer and the second conductor layer are located on the surface of the same insulating layer and are located inside the insulating substrate, the first conductor layer is stretched to substantially the same thickness, and the thickness of the first conductor layer is greater than the thickness of the second conductor layer.

2. The ceramic structure according to claim 1, wherein the cross-sectional area of ​​the first conductor layer is greater than the cross-sectional area of ​​the second conductor layer.

3. The ceramic structure according to claim 1 or 2, wherein the first conductor layer and the second conductor layer have the same main component.

4. The ceramic structure according to any one of claims 1 to 3, wherein the insulating substrate has a first surface and a second surface opposite to the first surface, and the second conductor layer is in contact with the first conductor layer at a position close to the first surface.

5. The ceramic structure according to any one of claims 1 to 3, wherein the insulating substrate has a first surface and a second surface opposite to the first surface, and when viewed from the first surface side in a plan view, a portion of the second conductor layer overlaps with the first conductor layer.

6. The ceramic structure according to any one of claims 1 to 3, wherein the insulating substrate has a first surface and a second surface opposite to the first surface, and the second conductor layer has a first conductor in contact with the first surface and a second conductor in contact with the second surface.

7. The ceramic structure according to claim 6, wherein the first conductor and the second conductor are in contact in part.

8. The ceramic structure according to claim 6 or 7, wherein one of the first conductor and the second conductor is a heater and the other is a resistance thermometer.

9. The ceramic structure according to any one of claims 1 to 8, wherein the second conductor layer is bent in the thickness direction.

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