Substrate processing apparatus
By controlling separation gas flow rates based on susceptor rotation, the device stabilizes substrate processing by preventing detachment due to centrifugal forces, addressing the issue of pressure differences in multi-zone processing.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- WONIK IPS CO LTD
- Filing Date
- 2025-03-28
- Publication Date
- 2026-07-02
AI Technical Summary
Substrates mounted on a susceptor can be dislodged due to pressure differences between process and separation regions during rotation, caused by centrifugal force in substrate processing devices with multiple separation gas injection units.
The substrate processing device controls the flow rate of separation gas differently based on the rotation and stop of the susceptor, reducing the flow rate during rotation to prevent substrates from detaching from the support.
Prevents substrates from detaching from the susceptor by managing pressure differences through controlled gas flow rates, ensuring stable substrate processing.
Smart Images
Figure KR2025004004_02072026_PF_FP_ABST
Abstract
Description
Substrate processing device
[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus having a plurality of separation gas injection units for separating a plurality of process areas.
[0002] Recently, substrate processing for multiple substrates is being carried out within a single process chamber for various purposes, such as productivity and process uniformity.
[0003] A substrate processing device for this purpose includes a separation gas injection unit that injects a separation gas to partition a processing space of a process chamber into a plurality of process regions. Specifically, the gas injection structure of the substrate processing device may include a plurality of process gas injection units corresponding to a plurality of process regions and a plurality of separation gas injection units disposed between the plurality of process gas injection units.
[0004] At this time, multiple separation gas injection units inject separation gas at the same flow rate. Specifically, each of the multiple separation gas injection units continuously injects separation gas having a flow rate sufficient to maintain each process area independently from the stage where the substrate processing process for multiple substrates begins until the stage where it is completed.
[0005] Embodiments of the present invention provide a substrate processing device that allows substrates mounted on a susceptor to be processed stably without detaching from the susceptor when the susceptor is driven in rotation.
[0006] A substrate processing apparatus according to an embodiment of the present invention comprises: a process chamber including a plurality of process zones; a susceptor configured to be rotatable and including a plurality of substrate support modules spaced apart at regular intervals so that at least one substrate can be positioned in each process zone; a gas injection structure configured to include a plurality of process gas injection units that inject process gas or purge gas toward a facing substrate support module and a plurality of separation gas injection units that inject separation gas to distinguish the plurality of process zones, and a control unit that controls the operation of the susceptor and the gas injection structure so that processing of the substrate proceeds simultaneously or sequentially in each of the plurality of process zones, and controls the injection flow rate injected from the plurality of separation gas injection units differently according to the rotation and stopping of the susceptor.
[0007] According to an embodiment of the present invention, by reducing the flow rate of the separation gas injected into the separation region while the susceptor is rotating, the problem of the substrate being dislodged from the substrate support due to the pressure difference between the process region and the separation region as it passes through the separation region, which is affected by the centrifugal force caused by the rotation of the susceptor, can be prevented.
[0008] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
[0009] FIG. 2 is a bottom view showing a process gas injection unit and a separation gas injection unit provided in the lead of the substrate processing device illustrated in FIG. 1.
[0010] FIG. 3 is an enlarged perspective view of a substrate support of a substrate processing device illustrated in FIG. 1.
[0011] FIG. 4 is a timing diagram for explaining the operation of a separation gas injection unit that injects separation gas at different flow rates depending on the rotation and stop of a susceptor according to an embodiment of the present invention.
[0012] FIG. 4 illustrates the best mode for carrying out the present invention.
[0013] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to embodiments of the present invention, FIG. 2 is a bottom view showing a process gas injection unit and a separation gas injection unit provided in the lead of the substrate processing apparatus shown in FIG. 1, and FIG. 3 is an enlarged perspective view showing a substrate support of the substrate processing apparatus shown in FIG. 1. For reference, FIG. 1 may include a cross-section along line II′ of FIG. 2 and a cross-section along line II-II′ of FIG. 3.
[0014] Referring to FIGS. 1 to 3, the substrate processing apparatus (10) according to an embodiment of the present invention may be, for example, a space-time divided atomic layer deposition apparatus having a processing space divided into a plurality of process regions.
[0015] In an embodiment, the substrate processing device (10) may include a process chamber (100), a gas injection structure (200), a substrate support (300), a heater (450), an exhaust unit (500), and a controller (600).
[0016] The process chamber (100) may include a chamber wall (110a) and a lid (120). The lid (120) may be located at the upper edge of the chamber wall (110a). A processing space (110) within the process chamber (100) may be limited as a gas injection structure (200) is inserted and fixed between the lids (120).
[0017] The process chamber (100) may include a sealing member (not shown) interposed between the chamber wall (110a) and the lid (120). The sealing member may include, but is not limited to, an O-ring.
[0018] In the embodiment, the processing space (110) may be divided into first to fourth process areas (A1, A2, A3, A4), but is not specifically limited thereto. For example, individual substrate processing processes may be performed in each of the first to fourth process areas (A1, A2, A3, A4). Separation areas in which a separation gas is injected may be formed between each process area (A1, A2, A3, A4) so that independent substrate processing processes may be performed in each process area (A1, A2, A3, A4).
[0019] The gas injection structure (200) may include first to fourth process gas injection sections (210, 220, 230, 240) for providing process gases to each of the first to fourth process regions (A1, A2, A3, A4). In an embodiment, each of the first to fourth process gas injection sections (210, 220, 230, 240) may be spaced apart from each other at a 90° interval. Additionally, each of the first to fourth process gas injection sections (210, 220, 230, 240) may be arranged sequentially along the circumferential direction.
[0020] Additionally, each of the first to fourth process areas (A1, A2, A3, A4) may be located below each of the first to fourth process gas injection units (210, 220, 230, 240). The positional relationship of each of the first to fourth process gas injection units (210, 220, 230, 240) with respect to each of these first to fourth process areas (A1, A2, A3, A4) may be fixed.
[0021] For example, assuming that a processing process for one cycle of a substrate (S) proceeds and is completed in the order of a first processing (Step 1) in a first processing area (A1), a second processing (Step 2) in a second processing area (A2), a third processing (Step 3) in a third processing area (A3), and a fourth processing (Step 4) in a fourth processing area (A4), the processing area where the substrate (S) is located can be sequentially changed for each step (Step 1, Step 2, Step 3, Step 4) by the movement of the substrate (S). At this time, the movement of the substrate (S) can be performed according to the rotation of the substrate support (300).
[0022] Referring again to FIG. 1 and FIG. 2, the gas injection structure (200) may include first to fourth process gas supply blocks (250a, 250b, 250c, 250d) connected to each of the first to fourth process gas injection sections (210, 220, 230, 240). Each of the first to fourth process gas supply blocks (250a, 250b, 250c, 250d) may be configured to provide process gas to the corresponding process gas injection section.
[0023] For example, assuming that the first to fourth processes (Step 1 to Step 4) are performed on the substrate (S) in each of the first to fourth process regions (A1, A2, A3, A4) and that the first to fourth processes (Step 1 to Step 4) are each different types of processes, the first to fourth process gas supply blocks (250a, 250b, 250c, 250d) may each be configured to provide process gas for each of the first to fourth processes (Step 1 to Step 4) to the corresponding process gas injection unit.
[0024] In an embodiment, the first process gas supply block (250a) may provide an inhibitor gas or a purge gas to the first process gas injection unit (210). Accordingly, the first process gas injection unit (210) may inject the inhibitor gas or the purge gas into the first process area (A1). Here, the inhibitor gas may be a deposition inhibiting gas, which is a gas having the property of inhibiting the adsorption of subsequent process gases.
[0025] Additionally, the second process gas supply block (250b) may provide the first process gas, the second process gas, or the purge gas to the second process gas injection unit (220). Accordingly, the second process gas injection unit (220) may inject the first process gas, the second process gas, or the purge gas into the second process area (A2). For example, the first process gas and the second process gas may each be different types of process gases containing one of a Zr-containing precursor, an Hf-containing precursor, and a Ta-containing precursor, but are not specifically limited thereto.
[0026] Additionally, the third process gas supply block (250c) may provide the third process gas, the fourth process gas, or the purge gas to the third process gas injection unit (230). Accordingly, the third process gas injection unit (230) may inject the third process gas, the fourth process gas, or the purge gas into the third process area (A3). For example, the third process gas and the fourth process gas may each be different types of process gases containing one of an Al-containing precursor, a Y-containing precursor, and a Ti-containing precursor, but are not specifically limited thereto.
[0027] Additionally, the fourth process gas supply block (250d) may provide a first reaction gas, a second reaction gas, or a purge gas to the fourth process gas injection unit (240). Accordingly, the fourth process gas injection unit (240) may inject the first reaction gas, the second reaction gas, or the purge gas into the fourth process area (A4). For example, the first reaction gas may include an O2 or O3 precursor, and the second reaction gas may include H2O, but is not specifically limited thereto.
[0028] Again, referring to FIGS. 1 and FIGS. 2, the gas injection structure (200) may include a plurality of separated gas injection sections (260a to 260e). The plurality of separated gas injection sections (260a to 260e) may each be positioned between adjacent first to fourth process gas injection sections (210, 220, 230, 240). For example, a plurality of separation gas injection units (260a to 260e) may include a first separation gas injection unit (260a) located between the first process gas injection unit (210) and the second process gas injection unit (220), a second separation gas injection unit (260b) located between the second process gas injection unit (220) and the third process gas injection unit (230), a third separation gas injection unit (260c) located between the third process gas injection unit (230) and the fourth process gas injection unit (240), a fourth separation gas injection unit (260d) located between the fourth process gas injection unit (240) and the first process gas injection unit (210), and a fifth separation gas injection unit (260e) located at the center where the first to fourth separation gas injection units (260a to 260d) are connected to each other. Here, the fifth separation gas injection unit (260e) may be referred to as a curtain gas injection unit.
[0029] The first to fifth separation gas injection units (260a to 260e) are each located between adjacent first to fourth process zones (A1, A2, A3, A4) to prevent mixing of process gases injected into each process zone and unexpected reactions between process gases and reaction gases.
[0030] The first to fifth separation gas injection units (260a to 260e) may each be connected to a separation gas supply block (270). The separation gas supply block (270) may be configured to supply separation gas to each of the first to fifth separation gas injection units (260a to 260e). For example, the separation gas may include an inert gas such as argon (Ar) gas, nitrogen (N2) gas, etc., but is not specifically limited thereto.
[0031] In an embodiment, the first to fifth separation gas injection units (260a, to 260e) may each be connected to a separation gas supply block (270) through corresponding first to fifth separation gas supply lines (271 to 275). For example, the first to fifth separation gas supply lines (271 to 275) may each include a mass flow controller (MFC, not shown) for controlling the flow rate of the injection gas supplied to the corresponding separation gas injection unit, and a valve (not shown) that is controlled to open or close according to a signal from the MFC.
[0032] The above-described embodiment is an example illustrating that the substrate processing device (10) operates in a 4-zone substrate processing manner. In other embodiments, the substrate processing device (10) may operate in a 2-zone substrate processing manner.
[0033] For example, in a 2-zone substrate processing method, the same processing process for two substrates (S) may be performed in the second and third process areas (A2, A3) among the first to fourth process areas (A1 to A4), and the same processing process for two substrates (S) may be performed in the first and fourth process areas (A1, A4). At this time, source gas and purge gas may be injected into the second and third process areas (A2, A3), and reaction gas and purge gas may be injected into the first and fourth process areas.
[0034] In the above-described 4-Zone substrate processing method, a substrate (S) located in each of the first to fourth process areas (A1 to A4) can be moved at 90° intervals to a process area for the next sequence of processing. Meanwhile, in the 2-Zone substrate processing method, a substrate (S) located in each of the first to fourth process areas (A1 to A4) can be moved at 180° intervals to a process area for the next sequence of processing.
[0035] In the embodiment, the movement of the substrate (S) can be achieved by the rotation of the substrate support (300) that supports the substrate (S).
[0036] The substrate support (300) may be placed inside the processing space (110) of the process chamber (100). For example, the substrate support (300) may be placed in the lower region of the processing space (110). The substrate support (300) may support a plurality of substrates loaded into the process chamber (100).
[0037] The substrate support (300) may include a susceptor (310), a rotation shaft (320), and a plurality of substrate support modules (400). The susceptor (310) may have a roughly disc shape, but is not limited thereto. The rotation shaft (320) is connected to the center of the lower surface of the susceptor (310) to rotate the susceptor (310). That is, the substrate support (300), specifically the susceptor (310), may be rotated around the rotation shaft (320). The rotation shaft (320) may be rotated, for example, in a clockwise direction.
[0038] A plurality of substrate support modules (400) may be mounted in pockets of the substrate support (300) and configured to be rotatable individually. For example, the substrate support modules (400) may be positioned on the upper part of the substrate support (300) so as to face each of the first to fourth process gas injection units (210, 220, 230, 240) during the process. Additionally, the substrate support modules (400) may be provided in a number corresponding to the first to fourth process gas injection units (210, 220, 230, 240).
[0039] In an embodiment, each of the first to fourth process areas (A1 to A4) of the processing space (110) may include first to fourth process gas injection units (210 to 240) and first to fourth substrate support modules (400-1 to 400-4) on a susceptor (310) facing each process gas injection unit.
[0040] As explained above, the positional relationship of the first to fourth process gas injection units (210 to 240) for each of the first to fourth process areas (A1 to A4) is fixed regardless of the substrate processing process, whereas the substrate support module facing the first to fourth process gas injection units (210 to 240) may change as the substrate processing process proceeds.
[0041] For example, before the substrate processing process begins, the first process gas injection unit (210) and the first substrate support module (400-1), the second process gas injection unit (220) and the second substrate support module (400-2), the third process gas injection unit (230) and the third substrate support module (400-3), and the fourth process gas injection unit (240) and the fourth substrate support module (400-4) may each face each other. However, as the substrate processing process proceeds and the susceptor (310) is rotated by the control of the control unit (600) for the next sequence of processing processes for the substrate (S) on each substrate support module, the substrate support module facing each of the first to fourth process gas injection units (210 to 240) may be changed.
[0042] For example, if the substrate processing method of the substrate processing device (10) according to the embodiment is a 4-Zone method, the first substrate support module (400-1) can move to sequentially face the first process gas injection unit (210), the second process gas injection unit (220), the third process gas injection unit (230), and the fourth process gas injection unit (240) according to each processing step (Step 1 to Step 4). The second to fourth substrate support modules (400-2 to 400-4) can also move to face the corresponding process gas injection unit according to the processing step, just like the first substrate support module (400-1).
[0043] Meanwhile, in the case where the substrate processing method of the substrate processing device (10) according to the embodiment is a 2-Zone method, depending on the processing step, the second and third substrate support modules (400-2, 400-3) may move to face the first and fourth process gas injection units (210, 240), respectively, and the first and fourth substrate support modules (400-1, 400-4) may move to face the third and second process gas injection units (230, 220), respectively.
[0044] For example, the susceptor (310) can rotate 90° or 180° clockwise depending on whether the substrate processing method of the substrate processing device (10) is a 4-Zone method or a 2-Zone method, and accordingly, the process area where each of the first to fourth substrate support modules (400-1 to 400-2) is located can be changed.
[0045] In an embodiment, the first to fifth separation gas injection units (260a to 260e) can continuously inject separation gas into the separation area from the start of the substrate processing process in the substrate processing device (10) until it is completed. For example, the first to fifth separation gas injection units (260a to 260e) can continuously inject separation gas while the process gas for processing the substrate (S) and the purge gas for removing residual process gas and reaction by-products are injected into each of the first to fourth process areas (A1 to A4), and while the susceptor (310) rotates to move the substrate (S) located in each of the first to fourth process areas (A1 to A4) to the process area for the next sequence of processing. At this time, while the susceptor (310) rotates, the first and fourth process gas injection units (210 to 240) and the purge plate (not shown) can inject purge gas into each of the first to fourth process areas (A1 to A4).
[0046] Since the separation gas injected from the first to fifth separation gas injection units (260a to 260e) is intended for complete separation between the first to fourth process areas (A1 to A4), the separation gas can be injected at a relatively higher injection flow rate than the injection flow rate of the purge gas injected from the first to fourth process gas injection units (210 to 240) while the processing process for the substrate (S) is performed in the first to fourth process areas (A1 to A4), that is, while the susceptor (310) is in a stationary state. For example, assuming that the injection flow rate of the purge gas injected from the first to fourth process gas injection units (210 to 240) is 2000 sccm, the injection flow rate of the separation gas injected from the first to fifth separation gas injection units (260a to 260e) while the susceptor (310) is in a stationary state may be 2500 sccm or higher.
[0047] When the susceptor (310) rotates to move the substrate (S) located in each of the first to fourth process areas (A1 to A4) to the next process area, the substrate (S) passes through the separation area. At this time, a problem may occur in which the substrate (S), affected by the centrifugal force caused by the rotation of the susceptor (310), detaches from the substrate support module due to the pressure difference between the process area and the separation area.
[0048] Accordingly, in this embodiment, the injection flow rate of the separation gas injected from the first to fifth separation gas injection units (260a to 260e) while the susceptor (310) is stationary is controlled to be different from the injection flow rate of the separation gas injected from the first to fifth separation gas injection units (260a to 260e) while the susceptor (310) is rotating.
[0049] For example, the control unit (600) can control a mass flow controller (MFC) (not shown) installed in each of the first to fifth separation gas supply lines (271 to 275) so that when the susceptor (310) is stopped, the first to fifth separation gas injection units (260a to 260e) inject separation gas having a first injection flow rate into the separation area, and when the susceptor (310) is rotating, the first to fifth separation gas injection units (260a to 260e) inject separation gas having a second injection flow rate lower than the first injection flow rate into the separation area. At this time, the second injection flow rate may be equal to or lower than the injection flow rate of the purge gas injected from the first to fourth process gas injection units (210 to 240) and the purge plate (not shown) while the susceptor (310) is rotating. For example, the second injection flow rate may be 2000 sccm or lower.
[0050] FIG. 4 is a timing diagram illustrating the operation of a separation gas injection unit that injects separation gas at different flow rates depending on the rotation and stop of a susceptor according to an embodiment of the present invention. For convenience of explanation, FIG. 4 only shows the first treatment (Step 1) and the second treatment (Step 2) for the substrate (S), but it will be obvious to those skilled in the art that multiple treatment steps may be performed before the first treatment (Step 1) and after the second treatment (Step 2).
[0051] Referring to FIG. 4, the first treatment (Step 1) for a substrate may include the step of injecting a process gas for the first treatment (Step 1) into at least one of the first to fourth process areas (A1 to A4) of the process chamber (110, FIG. 1) for a set time, and the step of injecting a purge gas into the said process area for a set time after the injection of the process gas is completed. During the first treatment (Step 1) process for the substrate, the susceptor (310, FIG. 3) may be in a stationary state. Additionally, the separation gas injection unit (260a to 260e, FIG. 2) may inject a separation gas into the separation areas (B1 to B5, FIG. 3) at a first injection flow rate. At this time, the first injection flow rate may have a preset maximum injection flow rate value (Max).
[0052] A first treatment (Step 1) on the substrate can be completed after a purge gas is injected for a set time. When the first treatment (Step 1) on the substrate is completed, the susceptor (310) can be rotated to move the substrate to a process area for the next sequence of treatment. At this time, while the susceptor (310) is rotating, a purge gas can be continuously injected from a process gas injection unit corresponding to the process area where the first treatment (Step 1) on the substrate was performed.
[0053] Referring to FIG. 4, while the susceptor (310) is rotating, the separation gas injection unit (260a to 260e) can inject separation gas into separation regions (B1 to B5) at a second injection flow rate. At this time, the second injection flow rate has a relatively lower flow rate value compared to the first injection flow rate and may have a preset minimum injection flow rate value (Min). For example, the second injection flow rate (b) of the separation gas may be less than or equal to the injection flow rate (a) of the purge gas injected from the process gas injection unit.
[0054] When the substrate is located in the process area for the second processing (Step 2), the susceptor (310) may stop rotating and stop. Afterward, process gas for the second processing (Step 2) may be injected into the process area where the substrate is located for a set time, and then purge gas may be injected for a set time. At this time, the separation gas injection unit (260a to 260e) may again inject separation gas into the separation areas (B1 to B5) at a first injection flow rate.
[0055] In this way, by controlling the flow rate of the separation gas injected into the separation area while the susceptor (310) is rotating to be lower than the flow rate of the separation gas injected into the separation area while the susceptor (310) is stationary, it is possible to prevent the substrate (S) from detaching from the substrate support module while the susceptor (310) is rotating.
[0056] The heater unit (450) may be located inside the processing space (110) of the process chamber (100). The heater unit (450) may include a hollow (H1) into which a rotating shaft (320) is inserted, is located at the bottom of the susceptor (310), and can heat the susceptor (310) to a predetermined temperature.
[0057] The exhaust section (500) may include an exhaust line (530), a valve (V), and a vacuum pump (140). The exhaust line (530) may connect the vacuum pump (540) to the inside of the process chamber (100), the processing space (110). The vacuum pump (140) provides a vacuum to the processing space (110) to control the vacuum level of the processing space (110) and to discharge process gases and reaction byproducts from the processing space (110). The valve (V) is located in the exhaust line (530) and may be a throttle valve that controls the vacuum level of the processing space (110) according to the opening rate.
[0058] At least one exhaust unit (500) may be provided in the process chamber (110), and in some cases, a remote plasma device may be further provided.
[0059] The control unit (600) can control the operation of the gas injection structure (200) and the substrate support (300) for the substrate processing process. The control unit (260) can control each configuration of the substrate processing device (10) to implement a spatiotemporal division method in which a spatial division method and a time division method are fused, while using an ALD method.
[0060] As an example, the control unit (600) can control the first to fourth process gas supply blocks (250a, 250b, 250c, 250d) to control the types of process gas and reaction gas provided through the first to fourth process gas injection units (210, 220, 230, 240).
[0061] Additionally, the control unit (600) can control an MFC (not shown) installed on the first to fifth separation gas supply lines (271 to 275) connecting the separation gas supply block (270) and the first to fifth separation gas injection units (260a to 260e), such that when the susceptor (310) is stopped, the separation gas is injected into the separation area at a first injection flow rate, and when the susceptor (310) is rotating, the separation gas is injected into the separation area at a second injection flow rate lower than the first injection flow rate.
[0062] Additionally, the control unit (600) can control the rotation angle (e.g., rotation and stop operation) of the substrate support (300), i.e., the susceptor (310), to determine the position and process gas injection time so that the first to fourth substrates (S1, S2, S3, S4) and the first to fourth process gas injection units (210, 220, 230, 240) face each other. Furthermore, the purge process time can be controlled by adjusting the rotation speed of the substrate support (300).
[0063] More specifically, in order to implement a spatiotemporal division method, the control unit (600) may stop the substrate support (300) when gas for substrate processing is sprayed onto the first to fourth substrates (S1, S2, S3, S4), and may rotate the substrate support (300) when changing the type of gas sprayed onto the first to fourth substrates (S1, S2, S3, S4) or when performing a purge process.
[0064] Embodiments of the present invention can be usefully utilized in a substrate processing apparatus that performs substrate processing processes, such as deposition, etching, and cleaning processes, on a substrate (or wafer).
Claims
1. A process chamber including a plurality of process zones; A susceptor configured to be rotatable, comprising a plurality of substrate support modules spaced apart at regular intervals so that at least one substrate can be positioned in each process area, disposed inside the process chamber; A gas injection structure comprising a plurality of process gas injection units disposed on the upper part of the process chamber and injecting process gas or purge gas toward an opposing substrate support module, and a plurality of separation gas injection units injecting separation gas to separate the plurality of process regions; and A control unit that controls the driving of the susceptor and the gas injection structure so that processing of the substrate proceeds simultaneously or sequentially in each of the plurality of process regions, and controls the injection flow rate injected from the plurality of separated gas injection units differently according to the rotation and stopping of the susceptor. A substrate processing device including 2. In Paragraph 1, A substrate processing device in which the control unit controls the plurality of separation gas injection units to inject the separation gas at a first injection flow rate when the susceptor is in a stopped state and to inject the separation gas at a second injection flow rate lower than the first injection flow rate when the susceptor is in a rotating state.
3. In Paragraph 2, The above plurality of separated gas injection units are, A substrate processing apparatus comprising first to fourth separation gas injection units located between the plurality of process gas injection units and a fifth separation gas injection unit located at the center where the first to fourth separation gas injection units are connected to each other.
4. In Paragraph 3, The above gas injection structure is, A separation gas supply block that supplies separation gas to each of the first to fifth separation gas injection units; First to fifth separation gas supply lines connecting the separation gas supply block and each of the first to fifth separation gas injection units; and Mass Flow Controller (MFC) installed in each of the first to fifth separated gas supply lines A substrate processing device including 5. In Paragraph 4, A substrate processing device in which the above control unit controls the first to fifth separation gas injection units to inject separation gas at the first injection flow rate or the second injection flow rate according to the stationary or rotating state of the susceptor using the above flow rate controller.
6. In Paragraph 2, A substrate processing apparatus in which the second injection flow rate of the above-mentioned separation gas is less than or equal to the injection flow rate of the purge gas injected from the plurality of process gas injection units.
7. In Paragraph 1, The above control unit is a substrate processing device that controls the plurality of process gas injection units to inject the purge gas into a corresponding process area among the plurality of process areas while the susceptor is rotating.