Ultra-low power and high-precision temperature measurement sensor, and electronic apparatus comprising same

Abstract

According to some embodiments of the present invention, an ultra-low power and high-precision temperature measurement sensor comprises: a temperature-dependent voltage generation circuit that generates a temperature-dependent voltage that changes according to temperature; a first sensitivity amplification transistor that has a gate with the temperature-dependent voltage applied thereto, operates in a subthreshold region by means of the temperature-dependent voltage, and generates a first sensitivity amplification voltage; and a first diode load that is connected to the first sensitivity amplification transistor, wherein the first sensitivity amplification transistor and the first diode load include the same type of transistor.

Description

Ultra-low power high-precision temperature measurement sensor and electronic device including the same

[0001] The present invention relates to an ultra-low power, high-precision temperature measurement sensor and an electronic device including the same. More specifically, the present invention relates to a temperature measurement sensor capable of reducing power consumption while enabling high-precision measurement by amplifying temperature sensitivity using leakage current, and a device including the same.

[0002] The content described in this section merely provides background information regarding the present embodiment and does not constitute prior art.

[0003] Conventional temperature sensors have a limitation in that they require a high-resolution analog-to-digital converter (ADC) to accurately measure voltages dependent on temperature changes. This is because temperature-dependent voltages generally have very small signal magnitudes, and converting them into digital signals requires an ADC with high resolution. However, high-resolution ADCs increase design complexity, lead to higher manufacturing costs and power consumption, and can act as a constraint in the design of ultra-low-power and miniaturized devices.

[0004] For example, an analog-to-digital converter with a resolution of N=10 divides the maximum change of the input signal into 1024 intervals, and the input voltage corresponding to one interval of the digital output is very small at the level of 0.117mV. This requires an analog-to-digital converter capable of detecting high-sensitivity signals to detect precise temperature changes, which leads to technical limitations in the design of the analog-to-digital converter and an increase in power consumption.

[0005] More specifically, a temperature-dependent voltage generation circuit can generate a temperature-dependent voltage using PMOS transistors and BJTs. In this case, the temperature-dependent voltage has a negative temperature dependency (Complementary to Absolute Temperature, CTAT) and exhibits a characteristic of approximately -1.2 mV / °C. Therefore, when the temperature change is from 0 to 100°C, the total displacement of the temperature-dependent voltage is only about 120 mV. To accurately digitize this small signal, a high-resolution analog-to-digital converter is required; however, conventional analog-to-digital converters using the successive approximation method have limitations in detecting this, leading to high power consumption and design complexity.

[0006] Various studies are being conducted to address these issues with existing ultra-low-power temperature measurement sensors. Representative methods include techniques that amplify the temperature-dependent voltage itself and approaches that aim to improve the temperature-dependent voltage generation circuit. In the method of amplifying the temperature-dependent voltage itself, a voltage amplifier is used to amplify small signals, but this is prone to problems such as noise amplification and signal distortion. Furthermore, the nonlinearity of the amplification circuit itself degrades the accuracy of the output signal, and it may be unsuitable for ultra-small and ultra-low-power designs due to increased power consumption and circuit area.

[0007] In addition, research is underway to improve the temperature-dependent voltage generation circuit itself; however, since such circuits are sensitive to semiconductor process variations and often operate stably only within a specific temperature range, there is a problem where design complexity increases when supporting a wide temperature range.

[0008] To overcome these problems, the present invention designs a temperature sensitivity amplification circuit to resolve the minimum detection voltage constraint of an analog-to-digital converter by amplifying the temperature sensitivity rather than the temperature-dependent voltage itself, and aims to provide a more efficient and precise temperature measurement solution.

[0009] The problem that the present invention aims to solve is to provide an ultra-low power, high-precision temperature measurement sensor.

[0010] The problem that the present invention aims to solve is to provide an electronic device including an ultra-low power, high-precision temperature measurement sensor.

[0011] The objects of the present invention are not limited to those mentioned above, and other unmentioned objects and advantages of the present invention may be understood from the following description and will be more clearly understood by the embodiments of the present invention. Furthermore, it will be readily apparent that the objects and advantages of the present invention can be realized by the means and combinations thereof set forth in the claims.

[0012] An ultra-low power high-precision temperature measurement sensor according to some embodiments of the present invention for solving the above problem comprises a temperature-dependent voltage generating circuit that generates a temperature-dependent voltage that changes according to temperature, a first sensitivity amplification transistor that generates a first sensitivity amplification voltage that is gated by the temperature-dependent voltage and operates in a subthreshold region by the temperature-dependent voltage, and a first diode load connected to the first sensitivity amplification transistor, wherein the first sensitivity amplification transistor and the first diode load may be composed of transistors of the same type.

[0013] In some embodiments, the first diode load may include a first load transistor connected to the first sensitivity amplifier transistor, with the gate and drain connected to each other.

[0014] In some embodiments, the first diode load may further include a second load transistor connected to the first load transistor, with the gate and drain connected to each other.

[0015] In some embodiments, the output voltage of the first diode load is gated, and a second sensitivity amplifier transistor may be further included that operates in the subthreshold region by the output voltage of the first diode load and outputs a second sensitivity amplifier voltage.

[0016] In some embodiments, a second diode load connected to the second sensitivity amplifier transistor is further included, and the second diode load may include a third load transistor connected to the first sensitivity amplifier transistor and having its gate and drain connected to each other.

[0017] In some embodiments, the first sensitivity amplifier transistor and the first diode load may include an N-type transistor, and the second sensitivity amplifier transistor and the second diode load may include a P-type transistor.

[0018] In some embodiments, an analog-to-digital converter may be further included to receive the first sensitivity amplification voltage and the second sensitivity amplification voltage, and to convert the difference between the first sensitivity amplification voltage and the second sensitivity amplification voltage into a digital signal.

[0019] In some embodiments, the first diode load includes one or more load transistors connected to the first sensitivity amplification transistor, and depending on the number of the one or more load transistors, the amount of voltage change according to temperature of the first sensitivity amplification voltage may be determined.

[0020] In some embodiments, the magnitude of the temperature-dependent voltage may be smaller than the magnitude of the threshold voltage of the first sensitivity amplification transistor.

[0021] An ultra-low power high-precision temperature measurement sensor according to some embodiments of the present invention for solving the above problem comprises a temperature-dependent voltage generating circuit that generates a temperature-dependent voltage that changes according to temperature, a temperature sensitivity amplification circuit including a first transistor that amplifies temperature sensitivity based on the temperature-dependent voltage, and a first diode load connected to the first transistor, wherein the magnitude of the temperature-dependent voltage is smaller than the magnitude of the threshold voltage of the first transistor, and the first transistor and the first diode load may be composed of transistors of the same type.

[0022] In some embodiments, the first diode load includes one or more second transistors connected to the first transistor, and each of the one or more second transistors may have a gate and a drain connected to each other.

[0023] In some embodiments, the first transistor amplifies the temperature sensitivity to the temperature-dependent voltage to generate a first sensitivity amplification voltage, and the first sensitivity amplification voltage may be determined according to the number of the one or more second transistors.

[0024] In some embodiments, the first sensitivity amplification voltage and the output voltage of the one or more second transistors are provided, and a multiplexer that outputs one of the first sensitivity amplification voltage and the output voltage of the one or more second transistors may be further included.

[0025] In some embodiments, a third transistor connected to the first diode load and a second diode load connected to the third transistor are further included, and the output voltage of the first diode load can be applied to the gate of the third transistor.

[0026] In some embodiments, the magnitude of the output voltage of the first diode load may be smaller than the magnitude of the threshold voltage of the third transistor.

[0027] In some embodiments, the second diode load includes one or more fourth transistors connected to the third transistor, each of the one or more fourth transistors having its gate and drain connected to each other, and the third transistor amplifies the temperature sensitivity to the output voltage of the first diode load to generate a second sensitivity amplification voltage, and the second sensitivity amplification voltage may be determined according to the number of the one or more fourth transistors.

[0028] In some embodiments, a differential analog-to-digital converter that generates a digital signal based on the first sensitivity amplification voltage and the second sensitivity amplification voltage may be further included.

[0029] An electronic device according to some embodiments of the present invention for solving the above problem comprises a temperature-dependent voltage generating circuit that generates a temperature-dependent voltage that changes according to temperature, a first transistor in which the temperature-dependent voltage is gated to generate a first leakage current, a second transistor connected to the first transistor and determining the output voltage of the first transistor based on the first leakage current, and an analog-to-digital converter that generates a digital signal based on the output voltage of the first transistor, wherein the first transistor and the second transistor may be transistors of the same type.

[0030] In some embodiments, the output voltage of the second transistor is gated to generate a second leakage current, and the third transistor is further included to generate a second leakage current, and a fourth transistor is connected to the third transistor and determines the output voltage of the third transistor based on the second leakage current, and the analog-to-digital converter can generate the digital signal using the difference between the output voltage of the first transistor and the output voltage of the third transistor.

[0031] In some embodiments, the first transistor and the second transistor may be N-type transistors, and the third transistor and the fourth transistor may be P-type transistors.

[0032] A temperature measuring sensor according to some embodiments of the present invention has the advantage of being able to operate with ultra-low power of a few nW or less, making it applicable to technical fields where power efficiency is important.

[0033] In addition, the temperature measuring sensor according to some embodiments of the present invention has the advantage of enabling a highly integrated circuit design through area gain by amplifying temperature sensitivity, thereby not requiring a high-resolution analog-to-digital converter.

[0034] In addition, the temperature measuring sensor according to some embodiments of the present invention has the advantage of being applicable to various technical fields, as the amplification rate of temperature sensitivity can be set differently depending on the temperature measuring range.

[0035] In addition to the above, the specific effects of the present invention are described together with the specific details for implementing the invention below.

[0036] FIG. 1 is a diagram illustrating the configuration of an ultra-low power, high-precision temperature measurement sensor according to some embodiments of the present invention.

[0037] FIG. 2 is a diagram illustrating a temperature-dependent voltage generation circuit (100) according to some embodiments of the present invention.

[0038] FIG. 3 is a diagram illustrating, by way of example, the configuration of a temperature sensitivity amplification circuit according to some embodiments of the present invention.

[0039] FIGS. 4 to 8 are drawings for exemplarily illustrating the configuration of a temperature sensitivity amplification circuit according to several other embodiments of the present invention.

[0040] FIG. 9 is a diagram illustrating the difference between the result of amplifying temperature sensitivity and the result of amplifying temperature-dependent voltage according to some embodiments of the present invention.

[0041] FIG. 10 is a drawing for illustrating an electronic device including an ultra-low power, high-precision temperature measurement sensor according to some embodiments of the present invention.

[0042] Terms and words used in this specification and claims shall not be interpreted as being limited to their general or dictionary meanings. In accordance with the principle that an inventor may define the concept of a term or word to best describe their invention, they shall be interpreted in a meaning and concept consistent with the technical spirit of the invention. Furthermore, since the embodiments described in this specification and the configurations illustrated in the drawings are merely one embodiment of the invention and do not represent the entire technical spirit of the invention, it should be understood that various equivalents, modifications, and applicable examples capable of replacing them may exist at the time of filing this application.

[0043] The terms first, second, A, B, etc., as used in this specification and claims may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.

[0044] The terms used in this specification and claims are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" should be understood as not precluding the existence or addition of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification.

[0045] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which this invention pertains.

[0046] Terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0047] In addition, each component, process, procedure, or method included in each embodiment of the present invention may be shared within a scope that is not technically contradictory to one another.

[0048]

[0049] FIG. 1 is a diagram illustrating the configuration of an ultra-low power, high-precision temperature measurement sensor according to some embodiments of the present invention.

[0050] Referring to FIG. 1, an ultra-low power high-precision temperature measurement sensor (10) according to some embodiments of the present invention may include a temperature-dependent voltage generation circuit (100), a temperature sensitivity amplification circuit (200), and an analog-to-digital converter (300).

[0051] The temperature-dependent voltage generation circuit (100) is a temperature-dependent voltage (V TSO Can generate ). Temperature-dependent voltage (VTSO ) may refer to a voltage whose magnitude changes depending on the ambient temperature. For example, a temperature-dependent voltage generating circuit (100) can generate a temperature-dependent voltage (V) of a first magnitude at a first temperature. TSO Generates ) and a temperature-dependent voltage (V) of a second size different from the first size at a second temperature different from the first temperature. TSO It can generate ). In other words, temperature-dependent voltage (V TSO ) may refer to a voltage whose magnitude is variable depending on changes in ambient temperature. In some embodiments, as the ambient temperature increases, the temperature-dependent voltage (V TSO If the magnitude of ) increases, the corresponding temperature-dependent voltage (V TSO It can be said that ) has a positive temperature dependence, and as the ambient temperature increases, the temperature-dependent voltage (V TSO If the magnitude of ) decreases, the corresponding temperature-dependent voltage (V TSO It will be said that ) has a negative temperature dependence. For a more specific explanation, refer further to Fig. 2.

[0052]

[0053] FIG. 2 is a diagram illustrating a temperature-dependent voltage generation circuit (100) according to some embodiments of the present invention.

[0054] Referring to FIG. 2, the temperature-dependent voltage generation circuit (100) has a leakage current supply transistor (T S1 ) and temperature-dependent voltage generating transistor (T S2 It may include ).

[0055] Leakage current supply transistor (T S1 The gate, body, and source of the ) can be connected to a reference voltage. Leakage current supply transistor (T S1 ) is the first leakage current (I TSO It can generate leakage current). More specifically, the leakage current supply transistor (T S1 )'s V SGSince is 0, the leakage current supply transistor (T S1 ) is the first leakage current (I) which is not the channel current TSO ) can be generated. In other words, a leakage current supply transistor (T S1 ) operates in the subthreshold region, and the first leakage current (I TSO It can generate ). Leakage current supply transistor (T S1 ) may be a PMOS transistor, but the embodiments are not limited thereto.

[0056] First leakage current (I TSO ) is a temperature-dependent voltage generating transistor (T S2 It can be provided in a temperature-dependent voltage generating transistor (T S2 ) is the first leakage current (I TSO Using ), temperature-dependent voltage (V TSO It can generate a temperature-dependent voltage generating transistor (T S2 ) may be, for example, a PNP BJT, but the embodiments are not limited thereto.

[0057] Leakage current supply transistor (T S1 The first leakage current (I) generated in ) TSO ) and, temperature-dependent voltage generating transistor (T S2 Temperature-dependent voltage (V) generated at ) TSO ) can be expressed as shown in Equation 1 and Equation 2 below, respectively.

[0058]

[0059] [Mathematical Formula 1]

[0060]

[0061]

[0062] However, μ p is a leakage current supply transistor (T S1 Mobility constant of ), C oxε is the oxide capacitance, W / L is the leakage current supply transistor (T S1 The width and length of ), m is the slope coefficient of the sub-threshold region, V T ε = kT / q, where k is the Boltzmann constant, T is the absolute temperature, q is the electric charge, V sg is a leakage current supply transistor (T S1 The voltage difference between the source and gate, V sd is a leakage current supply transistor (T S1 It refers to the voltage difference between the source and drain of ).

[0063]

[0064] [Mathematical Formula 2]

[0065]

[0066]

[0067] where α is a proportionality constant, V BG is a temperature-dependent voltage generating transistor (T S2 It refers to the bandgap voltage of ).

[0068]

[0069] As can be seen in Equation 2, the temperature-dependent voltage (V) generated in the temperature-dependent voltage generation circuit (100) TSO ) can have a negative temperature dependence, meaning its magnitude decreases as the temperature increases. For example, the temperature-dependent voltage (V TSO ) can have a temperature sensitivity of -1.2 mV / ℃. That is, the temperature-dependent voltage (V) generated in the temperature-dependent voltage generation circuit (100) TSO ) may have a negative temperature dependency. However, this is merely illustrative, and the temperature sensitivity may be changed as much as needed depending on the conditions of the temperature-dependent voltage generation circuit (100).

[0070]

[0071] In summary, the temperature-dependent voltage generation circuit (100) is a leakage current supply transistor (T S1As ) operates in the sub-threshold region, the first leakage current (I) with high temperature dependence TSO Generates ), and a temperature-dependent voltage generating transistor (T S2 ) is the first leakage current (I TSO By using ), the temperature-dependent voltage (V) whose magnitude changes with temperature change TSO Can generate ).

[0072]

[0073] Referring again to FIG. 1, the temperature-dependent voltage (V) generated in the temperature-dependent voltage generation circuit (100) TSO ) can be provided to the temperature sensitivity amplification circuit (200). The temperature sensitivity amplification circuit (200) provides a temperature-dependent voltage (V TSO ) provided, and temperature-dependent voltage (V TSO Temperature sensitivity is amplified using ), and through this, the temperature sensitivity amplification voltage (V TC ) can generate. In other words, the temperature sensitivity amplification circuit (200) can generate a temperature-dependent voltage (V TSO Rather than amplifying the ) itself, by amplifying the temperature sensitivity, the temperature sensitivity amplification voltage (V TC Can generate ). Temperature sensitivity amplification voltage (V TC ) is a voltage with amplified temperature sensitivity, and is a temperature-dependent voltage (V TSO It can be a voltage more sensitive to temperature compared to ). In other words, the temperature sensitivity amplification voltage (V TC ) can refer to a voltage with high sensitivity to temperature changes. In this case, the temperature-dependent voltage (V TSO Even when amplifying ) itself, temperature sensitivity can be increased, but the temperature sensitivity amplification voltage (V TC ) and temperature-dependent voltage (V TSO In cases where the ) itself is amplified, there may be a difference in the absolute magnitude of the voltage. A detailed explanation of this will be provided later.

[0074] The temperature sensitivity amplification voltage (V) generated in the temperature sensitivity amplification circuit (200) TC ) can be provided to the analog-to-digital converter (300). The analog-to-digital converter (300) provides a temperature sensitivity amplification voltage (V TC A digital signal can be generated based on ). In other words, the analog-to-digital converter (300) can generate a temperature sensitivity amplification voltage (V TC Based on the magnitude of ), a digital signal representing a specific temperature value can be generated. Refer further to FIG. 3 for an exemplary description of the temperature sensitivity amplification circuit (200).

[0075]

[0076] FIG. 3 is a diagram illustrating, by way of example, the configuration of a temperature sensitivity amplification circuit according to some embodiments of the present invention.

[0077] Referring to FIG. 3, a temperature sensitivity amplification circuit (200) according to some embodiment of the present invention comprises a first sensitivity amplification voltage generating terminal (A N ), second sensitivity amplification voltage generation stage (A P ), first diode load (L DN ) and the second diode load (L DP It may include ).

[0078] First sensitivity amplification voltage generation stage (A N ) is the first sensitivity amplifier transistor (T N1 It may include a first sensitivity amplifier transistor (T N1 ) is the temperature-dependent voltage (V TSO ) can be gated. In other words, the temperature-dependent voltage (V) generated in the temperature-dependent voltage generation circuit (100) TSO ) is the first sensitivity amplifier transistor (T N1 It can be applied to the gate of the first sensitivity amplifier transistor (T N1 ) is the temperature-dependent voltage (V TSO Gated by ), and the first sensitivity amplification voltage (V TCNIt can generate ). That is, the first sensitivity amplifier transistor (T N1 ) is the temperature-dependent voltage (V TSO As ) is applied to the gate, the first sensitivity amplification voltage (V TCN Can generate ).

[0079] The first sensitivity amplification voltage generation stage (AN) and the first diode load (L DN ) can be connected to each other. That is, the first sensitivity amplifier transistor (T N1 ) and the first diode load (L DN ) can be connected to each other. The first diode load (L DN ) may include one or more load transistors. For example, a first diode load (L DN ) is the first load transistor (T N2 ), second load transistor (T N3 ), third load transistor (T N4 ) and the fourth load transistor (T N5 It may include ). In the present invention, the first diode load (L DN ) consists of 4 load transistors (i.e., the first load transistor (T N2 ) to the 4th load transistor (T N5 Although described as including )), the embodiments are not limited to the number of load transistors.

[0080] The first load transistor (T N2 ) is the first sensitivity amplifier transistor (T N1 It can be connected to ). More specifically, the first load transistor (T N2 The source of ) is the first sensitivity amplifier transistor (T N1 It can be connected to the drain of ).

[0081] The first load transistor (T N2 ) can operate as a diode load. That is, the first load transistor (T N2 The gate and drain of ) can be connected to each other. Also, the first load transistor (TN2 The body and source of ) can be connected to each other.

[0082] Second load transistor (T N3 ) is the first load transistor (T N2 It can be connected to ). More specifically, the second load transistor (T N3 The source of ) is the first load transistor (T N2 It can be connected to the drain of ). Likewise, the third load transistor (T N4 The source of ) is the second load transistor (T N3 Connected to the drain of ), and the fourth load transistor (T N5 The source of ) is the third load transistor (T N4 It can be connected to the drain of ).

[0083] According to some embodiments, a first sensitivity amplification transistor (T N1 The threshold voltage of ) is the temperature-dependent voltage (V TSO It can be larger than ). In other words, the first sensitivity amplifier transistor (T N1 Temperature-dependent voltage (V) applied to the gate of ) TSO ) is the first sensitivity amplifier transistor (T N1 It can be smaller than the threshold voltage of ). Therefore, the first sensitivity amplifier transistor (T N1 ) can operate in the sub-threshold region. That is, the first sensitivity amplifier transistor (T N1 ) can generate a second leakage current. The first sensitivity amplifier transistor (T N1 The second leakage current generated in ) is the first diode load (L DN Since it flows commonly in ), the first sensitivity amplification voltage generation stage (AN) and the first diode load (L DN All of them can operate in the sub-threshold region, that is, with only the second leakage current. This is because the first sensitivity amplification voltage (V TCNSince ) is generated in the sub-threshold region where the second leakage current flows, the first sensitivity amplification voltage (V TCN This may mean that the power consumption required to generate it is very low.

[0084] According to some embodiments, a first diode load (L DN The number of load transistors included in ) can be directly related to the degree of voltage change due to temperature change, that is, temperature sensitivity. In other words, the first sensitivity amplifier transistor (T N1 The first sensitivity amplification voltage (V) generated at ) TCN The temperature sensitivity of ) is the first diode load (L DN It can be determined according to the number of load transistors included in ). That is, the first sensitivity amplification voltage (V TCN The amount of voltage change according to the temperature of ) is the first diode load (L DN It can be determined according to the number of load transistors included in ). More specifically, the first diode load (L DN As the number of load transistors included in ) increases, the first sensitivity amplification voltage (V TCN The temperature sensitivity of ) can be increased linearly.

[0085] More specifically, the first diode load (L DN The drain-source voltage V of the load transistor included in ). DS,i It can be expressed as shown in mathematical formula 3 below.

[0086]

[0087] [Mathematical Formula 3]

[0088]

[0089] However, I D is the first sensitivity amplifier transistor (T N1 The second leakage current generated by ), I S represents the reference current.

[0090]

[0091] Referring to mathematical equation 3, the first diode load (L DN It can be confirmed that the drain-source voltage of the load transistor of ) has a temperature dependence. Therefore, the first diode load (L DN As the number of load transistors included in ) increases, the temperature dependence can accumulate and become even greater. In other words, the first diode load (L DN As the number of load transistors included in ) increases, the first sensitivity amplification voltage (V TCN The temperature sensitivity of ) can be increased. A person skilled in the art can design a temperature measuring sensor (10) using an appropriate number of load transistors according to the temperature range and measurement accuracy to be measured.

[0092]

[0093] 1st diode load (L DN Output voltage (V) NSO ) can be provided to the second sensitivity amplification voltage generation stage (AP). The second sensitivity amplification voltage generation stage (A P ) is the second sensitivity amplifier transistor (T P1 It may include ). The first diode load (L DN Output voltage (V) NSO ) is a second sensitivity amplifier transistor (T) included in the second sensitivity amplifier voltage generation stage (AP). P1 It can be gated to ). In other words, the first diode load (L DN Output voltage (V) NSO ) is the second sensitivity amplifier transistor (T P1 It can be applied to the gate of ). FIG. 3 shows the third load transistor (T N4 The output voltage of ) is the first diode load (L DN Output voltage (V) NSO Although illustrated as ), the embodiments are not limited thereto. That is, the first load transistor (T N2 ) and the second load transistor (T N3The output voltages of ) are the first diode load (L DN It can also be used as the output voltage of the second sensitivity amplifier transistor (T P1 ) operates in the sub-threshold region, and the second sensitivity amplification voltage (V TCP Can generate ).

[0094] Second sensitivity amplification voltage generation stage (A P ) and the second diode load (L DP ) can be connected to each other. That is, the second sensitivity amplifier transistor (T P1 ) and the second diode load (L DP ) can be connected to each other. The second diode load (L DP ) may include one or more load transistors. For example, a second diode load (L DP ) is the 5th load transistor (T P2 ), 6th load transistor (T P3 ), 7th load transistor (T P4 ) and the 8th load transistor (T P5 It may include ). In the present invention, a second diode load (L DP Although it is described as including 4 load transistors, the embodiments are not limited to the number of load transistors.

[0095] Fifth load transistor (T P2 The source of ) is the second sensitivity amplifier transistor (T P1 Connected to the drain of ), and the 6th load transistor (T P3 The source of ) is the 5th load transistor (T P2 Connected to the drain of ), and the 7th load transistor (T P4 The source of ) is the 6th load transistor (T P3 Connected to the drain of ), and the 8th load transistor (T P5 The source of ) is the 7th load transistor (T P4 It can be connected to the drain of ).

[0096] Fifth load transistor (TP2 ) to the 8th load transistor (T P5 Each of ) can operate as a diode load. That is, the fifth load transistor (T P2 ) to the 8th load transistor (T P5 The gate and drain of ) can be connected to each other. Also, the fifth load transistor (T P2 ) to the 8th load transistor (T P5 The body and source of ) can be connected to each other.

[0097] According to some embodiments, a second sensitivity amplification transistor (T P1 The threshold voltage of ) is the first diode load (L DN Output voltage (V) NSO It can be larger than ). In other words, the second sensitivity amplifier transistor (T P1 The first diode load (L) applied to the gate of ) DN Output voltage (V) NSO ) is the second sensitivity amplifier transistor (T P1 It can be smaller than the threshold voltage of ). Therefore, the second sensitivity amplifier transistor (T P1 ) can operate in the sub-threshold region. That is, the second sensitivity amplifier transistor (T P1 ) can generate a third leakage current. The second sensitivity amplifier transistor (T P1 The third leakage current generated in ) is the second diode load (L DP Since it flows commonly in ), the second sensitivity amplification voltage generation stage (A P ) and the second diode load (L DP All of them can operate in the sub-threshold region, that is, with only the third leakage current. This is because the second sensitivity amplification voltage (V TCP Since ) is generated in the sub-threshold region where the third leakage current flows, the second sensitivity amplification voltage (V TCP This means that the power consumption required to generate ) is very low.

[0098] According to some embodiments, a second diode load (L DP The number of load transistors included in ) can be directly related to the degree of voltage change due to temperature change, that is, temperature sensitivity. In other words, the second sensitivity amplifier transistor (T P1 The second sensitivity amplification voltage (V) generated at ) TCP The temperature sensitivity of ) is the second diode load (L DP It can be determined by the number of load transistors included in ). That is, the second sensitivity amplification voltage (V TCP The amount of voltage change according to the temperature of ) is the second diode load (L DP It can be determined according to the number of load transistors included in ). More specifically, the second diode load (L DP The greater the number of load transistors included in ), the more the second sensitivity amplification voltage (V TCP The temperature sensitivity of ) can be increased.

[0099] According to some embodiments, a first sensitivity amplification transistor (T N1 ) and the first diode load (L DN One or more load transistors included in ) may include N-type transistors. For example, a first sensitivity amplifier transistor (T N1 ), first load transistor (T N2 ), second load transistor (T N3 ), third load transistor (T N4 ) and the fourth load transistor (T N5 Each can be composed of NMOS.

[0100] In addition, the second sensitivity amplifier transistor (T P1 ) and the second diode load (L DP One or more load transistors included in ) may include P-type transistors. For example, a second sensitivity amplifier transistor (T P1 ), 5th load transistor (T P2 ), 6th load transistor (TP3 ), 7th load transistor (T P4 ) and the 8th load transistor (T P5 Each of ) can be composed of PMOS.

[0101] According to some embodiments, a first sensitivity amplifier transistor (T) composed of an N-type transistor N1 ) and the first diode load (L DN The first sensitivity amplification voltage (V) generated by ) TCN ) can have a positive temperature dependence. In addition, a second sensitivity amplifier transistor (T) composed of a P-type transistor P1 ) and the second diode load (L DP The second sensitivity amplification voltage (V) generated by ) TCP ) can have a negative temperature dependence.

[0102] Although the drawing shows the first sensitivity amplifier transistor (T N1 ), second sensitivity amplifier transistor (T P1 ), first diode load (L DN ) and the second diode load (L DP Although it has been described that ) is designed as a MOSFET, the embodiments are not limited thereto. For example, a first sensitivity amplification transistor (T N1 ), second sensitivity amplifier transistor (T P1 ), first diode load (L DN ) and the second diode load (L DP At least a portion of ) may be designed as a BJT or other transistor structure. A person skilled in the art of the present invention will be able to implement an ultra-low power, high-precision temperature measurement sensor (10) using various known elements as needed within the scope of the present invention.

[0103]

[0104] Referring again to FIG. 1, the analog-to-digital converter (300) has a temperature sensitivity amplification voltage (V TCIt can receive ) and convert it into a digital signal. In the case of FIG. 3, the temperature sensitivity amplification circuit (200) has a first sensitivity amplification voltage (V) having a positive temperature dependence. TCN ) and a second sensitivity amplification voltage (V) having negative temperature dependence TCP ) can be provided to the analog-to-digital converter (300). The analog-to-digital converter (300) provides a first sensitivity amplification voltage (V TCN ) and the second sensitivity amplification voltage (V TCP A digital signal can be generated by utilizing the difference of ). In other words, the analog-to-digital converter (300) may be a differential analog-to-digital converter that generates a digital signal by differentiating two analog signals. Differential signal processing can be very effective in removing external noise and common-mode noise, and a first sensitivity amplification voltage (V) having a positive temperature dependency TCN ) and a second sensitivity amplification voltage (V) having negative temperature dependence TCP If the ) is differential, the sensitivity to temperature changes can be further increased. Therefore, in this case, there is an advantage that high-precision temperature can be measured even if the resolution of the analog-to-digital converter (300) is low.

[0105] However, embodiments of the present invention have a first sensitivity amplification voltage (V TCN ) and the second sensitivity amplification voltage (V TCP It is not limited to generating all of them, and exemplary configurations of a temperature sensitivity amplification circuit (200) according to some other embodiments of the present invention are described with further reference to FIGS. 4 to 8 below.

[0106]

[0107] FIGS. 4 through 8 are drawings illustrating, respectively, the configuration of a temperature sensitivity amplification circuit according to several other embodiments of the present invention. For convenience of explanation, descriptions identical or similar to those previously described are omitted or briefly explained.

[0108] Referring to FIG. 4, the temperature sensitivity amplification circuit (200) is a first sensitivity amplification voltage generating terminal (A N ) and the first diode load (L DN It may include ). A first sensitivity amplification voltage generating stage (A N The first sensitivity amplifier transistor (T) included in ) N1 At the gate of ), a temperature-dependent voltage (V TSO ) may be applied. In this case as well, the first sensitivity amplifier transistor (T N1 ) operates in the sub-threshold region, which is the first sensitivity amplifier transistor (T N1 The magnitude of the threshold voltage of ) is the temperature-dependent voltage (V TSO It means that it is larger than the size of ). The first sensitivity amplifier transistor (T N1 ) is the temperature-dependent voltage (V TSO ) and the first diode load (L DN Through interaction with ), the first sensitivity amplification voltage (V TCN Can generate ).

[0109] 1st diode load (L DN ) may include one or more load transistors, and a first sensitivity amplifier transistor (T N1 It can be connected to the first diode load (L DN The number of one or more load transistors included in ) is the first sensitivity amplification voltage (V TCN It may be related to the temperature sensitivity of ). That is, the first diode load (L DN The greater the number of load transistors included in ), the higher the first sensitivity amplification voltage (V TCN ) temperature sensitivity may be increased.

[0110] According to some embodiments, a first sensitivity amplification voltage (V TCN ) may have a positive temperature dependence. The first sensitivity amplification voltage (V) generated in the temperature sensitivity amplification circuit (200) TCN) is provided to an analog-to-digital converter (300), and the analog-to-digital converter (300) provides a first sensitivity amplification voltage (V TCN A digital signal representing a specific temperature can be generated based on the size of ).

[0111] In other words, the temperature sensitivity amplification circuit (200) is a first sensitivity amplification voltage generating stage (A N ) and the first diode load (L DN It can be implemented with just ).

[0112]

[0113] Referring to FIG. 5, the temperature sensitivity amplification circuit (200) is a second sensitivity amplification voltage generating terminal (A P ) and the second diode load (L DP It may include ). A second sensitivity amplification voltage generation stage (A P The second sensitivity amplifier transistor (T) included in ) P1 At the gate of ), a temperature-dependent voltage (V TSO ) may be applied. In this case as well, the second sensitivity amplifier transistor (T P1 ) operates in the sub-threshold region, which is the second sensitivity amplifier transistor (T P1 The magnitude of the threshold voltage of ) is the temperature-dependent voltage (V TSO It means that it is larger than the size of ). The second sensitivity amplifier transistor (T P1 ) is the temperature-dependent voltage (V TSO ) and the second diode load (L DP Through interaction with ), the second sensitivity amplification voltage (V TCP Can generate ).

[0114] Second diode load (L DP ) may include one or more load transistors, and a second sensitivity amplifier transistor (T P1 It can be connected to the second diode load (L DP The number of one or more load transistors included in ) is the second sensitivity amplification voltage (V TCPIt may be related to the temperature sensitivity of ). That is, the second diode load (L DP The greater the number of load transistors included in ), the more the second sensitivity amplification voltage (V TCP ) temperature sensitivity may be increased.

[0115] According to some embodiments, a second sensitivity amplification voltage (V TCP ) may have a negative temperature dependence. The second sensitivity amplification voltage (V) generated in the temperature sensitivity amplification circuit (200) TCP ) is provided to an analog-to-digital converter (300), and the analog-to-digital converter (300) provides a second sensitivity amplification voltage (V TCP A digital signal representing a specific temperature can be generated based on the size of ).

[0116] In other words, the temperature sensitivity amplification circuit (200) is a second sensitivity amplification voltage generating stage (A P ) and the second diode load (L DP It can be implemented with just ).

[0117]

[0118] Referring to FIGS. 6 to 8, the temperature sensitivity amplification circuit (200) may further include a multiplexer (MUX) in addition to the sensitivity amplification voltage generation stage and the diode load.

[0119] A multiplexer (MUX) can be a device that selects one of several input signals to provide a single output.

[0120] For example, referring to Fig. 6, the temperature-dependent voltage (V TSO ) is the first sensitivity amplifier transistor (T N1 It can be applied to the gate of the first sensitivity amplifier transistor (T N1 The drain of ) and the first load transistor (T N2 The sources of ) are connected to each other, and the first load transistor (T N2 The drain of ) and the second load transistor (T N3The sources of ) are connected to each other, and the second load transistor (T N3 The drain of ) and the third load transistor (T N4 The sources of ) are connected to each other, and the third load transistor (T N4 The drain of ) and the fourth load transistor (T N5 The sources of ) can be connected to each other. At this time, the first load transistor (T N2 The output of the source terminal of ) is the first candidate voltage (V TCN1 ), second load transistor (T N3 The output of the source terminal of ) is the second candidate voltage (V TCN2 ), third load transistor (T N4 The output of the source terminal of ) is the third candidate voltage (V TCN3 ) and the fourth load transistor (T N5 The output of the source terminal of ) is the fourth candidate voltage (V TCN4 It can be defined as ).

[0121] The multiplexer (MUX) is a first candidate voltage (V TCN1 ) to 4th candidate voltage (V TCN4 ) can be provided as input. Depending on the signal of the selector (SEL), the multiplexer (MUX) receives the first candidate voltage (V TCN1 ) to 4th candidate voltage (V TCN4 One of ) as the first sensitivity amplification voltage (V TCN It can output as ). The analog-to-digital converter (300) can output a first sensitivity amplification voltage (V TCN A digital signal can be generated based on ). The first candidate voltage (V TCN1 ) is the fourth load transistor (T) at the reference voltage. N5 The drain-source voltage of ), the third load transistor (T N4 The drain-source voltage of ), the second load transistor (T N3 The drain-source voltage of ), the first load transistor (T N2 It can be equal to the value obtained by subtracting the drain-source voltage of ). In other words, the first candidate voltage (V TCN1Since ) is associated with the drain-source voltages of the four load transistors that have temperature dependence, it can have the highest temperature sensitivity. Meanwhile, the second candidate voltage (V TCN2 ) is the fourth load transistor (T) at the reference voltage. N5 The drain-source voltage of ), the third load transistor (T N4 The drain-source voltage of ), the second load transistor (T N3 It can be equal to the value obtained by subtracting the drain-source voltage of ). In other words, the second candidate voltage (V TCN2 Since ) is associated with the drain-source voltage of the three load transistors having temperature dependence, the first candidate voltage (V TCN1 Next, the temperature sensitivity may be high. Likewise, the third candidate voltage (V TCN3 ) is the fourth load transistor (T) at the reference voltage. N5 ) and the third load transistor (T N4 It is equal to the value obtained by subtracting the drain-source voltage of ), and the fourth candidate voltage (V TCN4 ) is the fourth load transistor (T) at the reference voltage. N5 It can be equal to the value obtained by subtracting the drain-source voltage of ). In other words, the first candidate voltage (V TCN1 ) has the highest temperature sensitivity, and the fourth candidate voltage (V TCN4 ) may have the lowest temperature sensitivity.

[0122] That is, the first candidate voltage (V TCN1 ) to 4th candidate voltage (V TCN4 ) can be voltages with different temperature sensitivities. For example, assuming that an analog-to-digital inverter operates in the range of 0 to 2V, the first sensitivity amplification voltage (V) in the multiplexer (MUX) TCN The first candidate voltage (V) with the highest temperature sensitivity as ) TCN1When using ), the highest precision temperature measurement is possible (e.g., temperature measurement in 0.1℃ increments), but the temperature measurement range may be the narrowest (e.g., temperature measurement from 0 to 50℃ is possible within the range of 0 to 2V). Meanwhile, in the multiplexer (MUX), the first sensitivity amplification voltage (V TCN ) The fourth candidate voltage (V) with the lowest temperature sensitivity TCN4 When using ), the precision for temperature measurement is the lowest (e.g., temperature measurement in units of 0.4°C), but the temperature measurement range can be the widest (e.g., temperature measurement from 0 to 200°C is possible in the range of 0 to 2V). Therefore, the ultra-low power high-precision temperature measurement sensor (10) according to some embodiments of the present invention has the advantage that the amplification rate of temperature sensitivity can be set differently depending on the temperature measurement range and precision, and thus can be applied in various ways depending on the technical field or needs.

[0123]

[0124] As another example, referring to FIG. 7, the temperature-dependent voltage (V TSO ) is the second sensitivity amplifier transistor (T P1 It can be applied to the gate of the second sensitivity amplifier transistor (T P1 The drain of ) and the 5th load transistor (T P2 The sources of ) are connected to each other, and the fifth load transistor (T P2 The drain of ) and the 6th load transistor (T P3 The sources of ) are connected to each other, and the 6th load transistor (T P3 The drain of ) and the 7th load transistor (T P4 The sources of ) are connected to each other, and the 7th load transistor (T P4 The drain of ) and the 8th load transistor (T P5 The sources of ) can be connected to each other. At this time, the fifth load transistor (T P2 The output of the source terminal of ) is the 5th candidate voltage (V TCP1 ), 6th load transistor (T P3The output of the source terminal of ) is the 6th candidate voltage (V TCP2 ), 7th load transistor (T P4 The output of the source terminal of ) is the 7th candidate voltage (V TCP3 ) and the 8th load transistor (T P5 The output of the source terminal of ) is the 8th candidate voltage (V TCP4 It can be defined as ).

[0125] The multiplexer (MUX) is the fifth candidate voltage (V TCP1 ) to the 8th candidate voltage (V TCP4 ) can be provided as input. Depending on the signal of the selector (SEL), the multiplexer (MUX) receives the 5th candidate voltage (V TCP1 ) to the 8th candidate voltage (V TCP4 One of ) as the second sensitivity amplification voltage (V TCP It can output as ). The analog-to-digital converter (300) can output a second sensitivity amplification voltage (V TCP A digital signal can be generated based on ). Similarly to what was described above, the fifth candidate voltage (V TCP1 ) is the 8th load transistor (T P5 ) to the 5th load transistor (T P2 It can be equal to the sum of the drain-source voltages of ). Also, the 6th candidate voltage (V TCP2 ) is the 8th load transistor (T P5 ) to the 6th load transistor (T P3 It can be equal to the sum of the drain-source voltages of ). Also, the 7th candidate voltage (V TCP3 ) is the 8th load transistor (T P5 ) and the 7th load transistor (T P4 It is equal to the sum of the drain-source voltages of ), and the 8th candidate voltage (V TCP4 ) is the 8th load transistor (T P5 It can be the same as the drain-source voltage of ). In other words, the fifth candidate voltage (V TCP1 ) has the highest temperature sensitivity, and the 8th candidate voltage (V TCP4 ) may have the lowest temperature sensitivity.

[0126] That is, the fifth candidate voltage (V TCP1 ) to the 8th candidate voltage (V TCP4 ) can be voltages with different temperature sensitivities. In other words, the fifth candidate voltage (V TCP1 ) has the highest temperature sensitivity, so while the precision of temperature measurement is the highest, the temperature measurement range may be the narrowest. Likewise, the 8th candidate voltage (V TCP4 While the temperature measurement range is the widest, the precision of the temperature measurement may be the lowest. The ultra-low power high-precision temperature measurement sensor (10) according to some embodiments of the present invention has the advantage of being able to set the amplification rate of temperature sensitivity differently depending on the temperature measurement range and precision, and thus can be applied in various ways depending on the technical field or needs.

[0127]

[0128] As another example, referring to FIG. 8, the temperature-dependent voltage (V TSO ) is the first sensitivity amplifier transistor (T N1 Applied to the gate of ), and the fourth candidate voltage (V TCN4 ) is the second sensitivity amplifier transistor (T P1 It can be applied to the gate of ). The multiplexer (MUX) uses the first candidate voltage (V TCN1 ) to 4th candidate voltage (V TCN4 One of ) as the first sensitivity amplification voltage (V TCN Output as ), and the 5th candidate voltage (V TCP1 ) to the 8th candidate voltage (V TCP4 One of ) is the second sensitivity amplification voltage (V TCP It can output as ). The analog-to-digital converter (300) can output a first sensitivity amplification voltage (V TCN ) and the second sensitivity amplification voltage (V TCP Digital signals can be generated based on ).

[0129] With reference to FIGS. 3 through 8, examples of a temperature sensitivity amplification circuit (200) according to some embodiments of the present invention have been described above; however, this is merely illustrative and the embodiments are not limited thereto, and a person skilled in the art may modify the temperature sensitivity amplification circuit (200) without departing from the scope of the present invention. For example, the first sensitivity amplification transistor (T) of FIG. 3 N1 ) and the first diode load (L DN ) and, a second sensitivity amplifier transistor (T P1 ) and the second diode load (L DP Even when changing the position of ), a temperature sensitivity amplification circuit (200) according to some embodiments of the present invention can be configured. In this case, the second sensitivity amplification transistor (T P1 Temperature-dependent voltage (V) at the gate of ) TSO ) is applied, and the 7th load transistor (T P4 The output voltage of ) is the first sensitivity amplifier transistor (T N1 It can be applied to the gate of ). In this way, a person skilled in the art can solve the problem intended to be solved by the present invention by adding, removing, and changing some configurations of the temperature sensitivity amplification circuit (200) without departing from the scope of the present invention.

[0130]

[0131] FIG. 9 is a diagram illustrating the difference between the result of amplifying temperature sensitivity and the result of amplifying temperature-dependent voltage according to some embodiments of the present invention.

[0132] The graph in Fig. 9 shows the temperature-dependent voltage (V TSO Voltage value according to temperature of ), first sensitivity amplification voltage (V TCN Voltage value per temperature of ), second sensitivity amplification voltage (V TCP Voltage values ​​by temperature and temperature-dependent voltage (V) TSO Amplified voltage (V) that amplifies the ) itselfAMP It shows the voltage values ​​of ) according to temperature. At this time, for the convenience of explanation, the first sensitivity amplification voltage (V TCN ) is the temperature-dependent voltage (V TSO It is a voltage with sensitivity amplified by -10 times compared to ), and the second sensitivity amplification voltage (V TCP ) is the temperature-dependent voltage (V TSO It is a voltage with sensitivity amplified 10 times compared to ), and the amplified voltage (V AMP ) is the temperature-dependent voltage (V TSO It is assumed that the voltage itself is amplified 10 times.

[0133] For example, temperature-dependent voltage (V) at 20℃ TSO ) is 400mV, and the first sensitivity amplification voltage (V TCN ) is 200mV, and the second sensitivity amplification voltage (V TCP ) is 1900mV, amplification voltage (V AMP It is assumed that ) is 4000mV.

[0134] Assuming the ambient temperature has increased to 21℃, the temperature-dependent voltage (V TSO ) is 398.8mV, and the first sensitivity amplification voltage (V TCN ) is 212mV, and the second sensitivity amplification voltage (V TCP ) is 1888mV, amplification voltage (V AMP ) can be measured as 3988mV.

[0135] That is, to measure a temperature change of 1℃, the temperature-dependent voltage (V TSO When measuring the ) itself, a high-resolution analog-to-digital converter capable of measuring a very small unit of 1.2mV may be required. However, since the temperature measuring sensor (10) according to the present invention has amplified temperature sensitivity, it is sufficient to read only a voltage change of 12mV to measure a temperature change of 1℃.

[0136] Meanwhile, temperature-dependent voltage (V TSO Even if the ) itself is amplified, temperature sensitivity can be amplified. For example, the temperature-dependent voltage (VTSO If the ) itself is amplified tenfold, the temperature sensitivity can also be amplified tenfold. However, the temperature-dependent voltage (V TSO Amplified voltage (V) that amplifies the ) itself AMP Since not only is the sensitivity high, but the magnitude of the voltage itself is also very large (due to amplification), power consumption is bound to increase. In other words, the temperature-dependent voltage (V TSO If the ) itself is amplified, even if high-precision temperature measurement is possible, it may be difficult to implement a low-power temperature measurement sensor, and it may also be unsuitable for integration into a semiconductor chip in that it requires a very large reference voltage.

[0137] According to some embodiments of the present invention, an ultra-low power high-precision temperature measurement sensor (10) has a temperature-dependent voltage (V TSO The advantage is that it consumes ultra-low power of less than a few nW because it utilizes leakage current for sensitivity amplification by operating within the sub-threshold region rather than amplifying the ) itself. In addition, the ultra-low power high-precision temperature measurement sensor (10) according to some embodiments of the present invention has the advantage of being able to measure changes in temperature more precisely because the temperature sensitivity can be amplified as is, even though it is implemented with ultra-low power. Furthermore, the ultra-low power high-precision temperature measurement sensor (10) according to some embodiments of the present invention has a first sensitivity amplification voltage (V) having a positive temperature dependence. TCN ) and a second sensitivity amplification voltage (V) having negative temperature dependence TCP By differentially applying ) and minimizing the effects of noise or distortion, there is an advantage in that temperature measurement with higher accuracy is possible.

[0138] Accordingly, an ultra-low power high-precision temperature measuring sensor (10) according to some embodiments of the present invention can amplify temperature sensitivity by consuming ultra-low power of less than a few nW by utilizing leakage current, and as the temperature sensitivity is amplified, a first sensitivity amplification voltage (V) whose magnitude changes relatively significantly according to the change in temperature.TCN ) and / or second sensitivity amplification voltage (V TCP By generating ), there is an advantage in that a lower resolution analog-to-digital converter (300) can be used. For example, an ultra-low power high-precision temperature measurement sensor (10) according to some embodiments of the present invention has a temperature-dependent voltage (V TSO It can be implemented with an area about 8 times smaller than that of a sensor that senses itself. That is, the ultra-low power high-precision temperature measurement sensor (10) according to some embodiments of the present invention has the advantage of being able to be designed with a highly integrated circuit.

[0139]

[0140] FIG. 10 is a drawing for illustrating an electronic device including an ultra-low power, high-precision temperature measurement sensor according to some embodiments of the present invention.

[0141] Referring to FIG. 10, an electronic device (1) according to some embodiments may include an ultra-low power high-precision temperature measurement sensor (10), a processor (20), a memory (30), an I / O (40), and an interface (50). The ultra-low power high-precision temperature measurement sensor (10), the processor (20), the memory (30), the I / O (40), and the interface (50) may interact with each other via a bus or through a direct connection. In other words, the ultra-low power high-precision temperature measurement sensor (10), the processor (20), the memory (30), the I / O (40), and the interface (50) may communicate with each other directly or indirectly through various methods.

[0142] The ultra-low power high-precision temperature measurement sensor (10) may be the temperature measurement sensor described through FIGS. 1 to 9.

[0143] The processor (20) can execute a program stored in memory (30). More specifically, the processor (20) can execute a program for driving the electronic device (1). In other words, the processor (20) can perform actual operations of the electronic device (1) according to the instructions of a pre-stored program.

[0144] The processor (20) is, for example, a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), an image signal processor (ISP), a sensor hub processor (Se NSO It may include at least one of a hub processor and a communication processor, but the embodiments are not limited thereto and may be any dedicated / general-purpose processor not described above.

[0145] The memory (30) can store various data used by at least one component of the electronic device (1). The data may include, for example, input data or output data for a computer program and related commands.

[0146] The memory (30) may include non-volatile memory and volatile memory. Non-volatile memory may be a memory that retains stored information even when power is not supplied. Non-volatile memory includes, for example, ROM (Read-Only Memory), PROM (Programmable Read-Only Memory), EAROM (Erasable Alterable ROM), EPROM (Erasable Programmable Read-Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory) (e.g., NAND Flash memory, NOR Flash memory), UVEPROM (Ultra-Violet Erasable Programmable Read-Only Memory), FeRAM (Ferroelectric Random Access Memory), MRAM (Magnetoresistive Random Access Memory), PRAM (Phase-change Random Access Memory), SONOS (silicon–oxide–nitride–oxide–silicon), RRAM (Resistive Random Access Memory), NRAM (Nanotube Random Access Memory), magnetic computer memory devices (e.g., hard disks, floppy disk drives, magnetic tapes), optical disc drives, and 3D XPoint memory. It may include at least one of memory. However, the present embodiment is not limited thereto.

[0147] Volatile memory, unlike non-volatile memory, may be a memory that continuously requires power to maintain stored information. Volatile memory may include, for example, at least one of DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), SDRAM (Synchronous Dynamic Random Access Memory), and DDR SDRAM (Double Data Rate SDRAM). However, the present embodiment is not limited thereto.

[0148] The I / O (40) can transmit or receive commands or data used in the components of the electronic device (1) to and from the electronic device (1). The I / O (40) may include, for example, a microphone, a mouse, a keyboard, a sensor, a speaker for multimedia playback, a display for visually representing information, a holographic device, a haptic device for converting electrical signals into tactile signals, etc.

[0149] The interface (50) may support one or more specified protocols that can be used for the electronic device (1) to be connected directly or wirelessly to an external / internal device. According to some embodiments, the interface (60) may support HDMI (High Definition Multimedia Interface), USB (Universal Serial Bus) interface, audio interface, Wireless LAN (WLAN), DMNA (Digital Living Network Alliance), Wibro (Wireless Broadband), Wimax (World Interoperability for Microwave Access), HS DPIt may include at least one of A (High Speed ​​Downlink Packet Access), HSUPA (High Speed ​​Uplink Packet Access), IEEE 802.16, Long Term Evolution (LTE), LTE-A (Long Term Evolution-Advanced), Wireless Mobile Broadband Service (WMBS), and 5G NR (New Radio), Bluetooth, RFID (Radio Frequency Identification), Infrared Data Association (IrDA), UWB (Ultra-Wideband), ZigBee, Near Field Communication (NFC), Ultra Sound Communication (USC), Visible Light Communication (VLC), Wi-Fi, Wi-Fi Direct, and 5G NR (New Radio), but the embodiments are not limited thereto. That is, in this specification, the term interface (50) is used as a collective term for all configurations for an electronic device (1) to be connected to an external device.

[0150] The electronic device (1) according to some embodiments may include various types of devices such as smartphones, personal computers (PCs), laptops, tablets, mobile phones, and smartphones. In particular, the ultra-low power high-precision temperature measurement sensor (10) according to some embodiments of the present invention is more effective when applied to portable devices, etc., as it is driven with ultra-low power, and may be more effective in areas requiring high-precision sensors where very small temperature changes, such as body temperature, are important. Accordingly, the electronic device (1) according to some embodiments of the present invention may operate more effectively in technical areas such as wearable devices, artificial organs, artificial skin, etc.

[0151]

[0152] The above description is merely an illustrative explanation of the technical concept of the present embodiment, and a person skilled in the art to which the present embodiment belongs would be able to make various modifications and variations within the scope of the essential characteristics of the present embodiment. Accordingly, the present embodiments are intended to explain, not limit, the technical concept of the present embodiment, and the scope of the technical concept of the present embodiment is not limited by these embodiments. The scope of protection of the present embodiment shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present embodiment.

[0153]

Claims

1. A temperature-dependent voltage generation circuit that generates a temperature-dependent voltage that changes with temperature; A first sensitivity amplifier transistor in which the temperature-dependent voltage is gated, operates in a subthreshold region by the temperature-dependent voltage, and generates a first sensitivity amplifier voltage; and It includes a first diode load connected to the first sensitivity amplification transistor, and The first sensitivity amplifier transistor and the first diode load are composed of transistors of the same type. Ultra-low power, high-precision temperature measurement sensor.

2. In Paragraph 1, The above first diode load is, A first load transistor connected to the first sensitivity amplifier transistor, wherein the gate and drain are connected to each other, Ultra-low power, high-precision temperature measurement sensor.

3. In Paragraph 2, The above first diode load is, A second load transistor further comprising a first load transistor connected to the first load transistor, wherein the gate and drain are connected to each other. Ultra-low power, high-precision temperature measurement sensor.

4. In Paragraph 1, The output voltage of the first diode load is gated, and the second sensitivity amplifier transistor, which operates in the subthreshold region by the output voltage of the first diode load and outputs a second sensitivity amplifier voltage, is further included. Ultra-low power, high-precision temperature measurement sensor.

5. In Paragraph 4, It further includes a second diode load connected to the second sensitivity amplification transistor, and The above second diode load is, A third load transistor connected to the first sensitivity amplifier transistor and having its gate and drain connected to each other, Ultra-low power, high-precision temperature measurement sensor.

6. In Paragraph 5, The first sensitivity amplifier transistor and the first diode load include an N-type transistor, and The second sensitivity amplifier transistor and the second diode load include a P-type transistor. Ultra-low power, high-precision temperature measurement sensor.

7. In Paragraph 5, The first sensitivity amplifier transistor and the first diode load include a P-type transistor, and The second sensitivity amplifier transistor and the second diode load include an N-type transistor. Ultra-low power, high-precision temperature measurement sensor.

8. In Paragraph 4, A method further comprising an analog-to-digital converter that receives the first sensitivity amplification voltage and the second sensitivity amplification voltage, and converts the difference between the first sensitivity amplification voltage and the second sensitivity amplification voltage into a digital signal. Ultra-low power, high-precision temperature measurement sensor.

9. In Paragraph 1, The first diode load includes one or more load transistors connected to the first sensitivity amplifier transistor, and Depending on the number of the above one or more load transistors, the voltage change amount according to temperature of the first sensitivity amplification voltage is determined, Ultra-low power, high-precision temperature measurement sensor.

10. A temperature-dependent voltage generation circuit that generates a temperature-dependent voltage that changes with temperature; A temperature sensitivity amplification circuit comprising a first transistor that amplifies temperature sensitivity based on the above temperature-dependent voltage; and It includes a first diode load connected to the first transistor, and The magnitude of the above temperature-dependent voltage is smaller than the magnitude of the threshold voltage of the first transistor, and The first transistor and the first diode load are composed of transistors of the same type. Ultra-low power, high-precision temperature measurement sensor.

11. In Paragraph 10, The above first diode load is, It includes one or more second transistors connected to the first transistor, and Each of the above one or more second transistors has a gate and a drain connected to each other, Ultra-low power, high-precision temperature measurement sensor.

12. In Paragraph 11, The first transistor amplifies the temperature sensitivity for the temperature-dependent voltage to generate a first sensitivity amplification voltage, and The first sensitivity amplification voltage is determined according to the number of the one or more second transistors, Ultra-low power, high-precision temperature measurement sensor.

13. In Paragraph 12, The first sensitivity amplification voltage and the output voltage of the one or more second transistors are provided, and the multiplexer further includes outputting one of the first sensitivity amplification voltage and the output voltage of the one or more second transistors. Ultra-low power, high-precision temperature measurement sensor.

14. In Paragraph 10, A third transistor connected to the first diode load; and It further includes a second diode load connected to the third transistor, and The output voltage of the first diode load is applied to the gate of the third transistor, Ultra-low power, high-precision temperature measurement sensor.

15. In Paragraph 14, The magnitude of the output voltage of the first diode load is smaller than the magnitude of the threshold voltage of the third transistor. Ultra-low power, high-precision temperature measurement sensor.

16. In Paragraph 14, The above second diode load is, It includes one or more fourth transistors connected to the third transistor, and Each of the above one or more fourth transistors has its gate and drain connected to each other, and The above third transistor is, A second sensitivity amplification voltage is generated by amplifying the temperature sensitivity for the output voltage of the first diode load, and The second sensitivity amplification voltage is determined according to the number of the one or more fourth transistors, Ultra-low power, high-precision temperature measurement sensor.

17. In Paragraph 16, A differential analog-to-digital converter that generates a digital signal based on the first sensitivity amplification voltage and the second sensitivity amplification voltage, further comprising Ultra-low power, high-precision temperature measurement sensor.

18. A temperature-dependent voltage generation circuit that generates a temperature-dependent voltage that changes with temperature; A first transistor in which the above temperature-dependent voltage is gated to generate a first leakage current; A second transistor connected to the first transistor and determining the output voltage of the first transistor based on the first leakage current; and It includes an analog-to-digital converter that generates a digital signal based on the output voltage of the first transistor, and The first transistor and the second transistor are transistors of the same type, Electronic device.

19. In Paragraph 18, A third transistor that generates a second leakage current by gating the output voltage of the second transistor; and It further includes a fourth transistor connected to the third transistor and determining the output voltage of the third transistor based on the second leakage current, The above analog-to-digital converter generates the digital signal using the difference between the output voltage of the first transistor and the output voltage of the third transistor. Electronic device.

20. In Paragraph 19, The first transistor and the second transistor are N-type transistors, and The above third transistor and the above fourth transistor are P-type transistors, Electronic device.

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