Covalent-organic and metal-organic frameworks as low k materials

Abstract

Implementations of the present disclosure generally relate to low k dielectric films disposed over a substrate. More particularly, implementations described herein provide, organic framework low k dielectric films and methods for forming the same. In at least one implementation, a process for depositing a film is provided and includes sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, where the film has a dielectric constant (k) of 3 or less.

Description

COVALENT-ORGANIC AND METAL-ORGANIC FRAMEWORKS AS LOW K MATERIALSBACKGROUNDField

[0001] The present disclosure generally relates to low k dielectric films disposed over a substrate, and, more particularly, relates to depositing organic framework low k dielectric films over a substrate.Description of the Related Art

[0002] Semiconductor device geometries have dramatically decreased in size since their introduction several decades ago. Modern semiconductor fabrication equipment is routinely used to produce devices having geometries as small as 28 nm and less, and new equipment designs are continually being developed and implemented to produce devices with even smaller geometries. As device geometries decrease, the impact of interconnect capacitance on device performance increases. To reduce interconnect capacitance, inter-layer materials that have traditionally been formed of silicon oxide are being formed using lower dielectric constant materials (low k materials). Low k materials are typically considered those which have a dielectric constant, or k, of less than 4. The constant k is defined as the ratio of a material's permittivity compared to that of vacuum. Some low k materials that have been used include silicon oxycarbide, silicon nitride, silicon carbon nitride, and silicon oxycarbonitride.

[0003] Conventional approaches to deposit low k films include atomic layer deposition (ALD), chemical vapor deposition (CVD), and plasma enhanced ALD (PEALD). Unfortunately, each of these processes results in reduced conformality, and / or composition conformality due to plasma non-uniform ity, respectively. Plasma and / or ozone may be employed to overcome this self-limiting growth, however, the conformality of the low k film is reduced. Moreover, a reduction in composition conformality due to plasma non-uniform ity leads to reduced and / or no carbon or nitrogen in features, e.g., trenches, of a substrate.

[0004] Therefore there is a need for devices containing dielectric layers having a reduced k value and methods for conformally depositing the same.SUMMARY

[0005] Implementations of the present disclosure generally relate to low k dielectric films disposed over or on a substrate, and more particularly, depositing organic framework low k dielectric films over a substrate to form a device.

[0006] In at least one implementation, a process for depositing a film is provided and includes sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, such that the film has a dielectric constant (k) of 3 or less.

[0007] In at least one implementation, a process for depositing a film is provided and includes providing a substrate including a plurality of features disposed on a surface, and sequentially exposing the surface to a metal compound and an organic compound, to form a film on the surface during a cyclic vapor deposition process. The film has a dielectric constant (k) of 3 or less and the metal compound includes tin, aluminum, chromium, cobalt, or any combination thereof.

[0008] In at least one implementation, a device is provided and contains a substrate having a plurality of features disposed on a surface and a film conformally disposed on the surface and the plurality of features. The film includes an organic framework including a plurality of pores, and the film has a thickness in a range from about 10 A to about 30 A and a dielectric constant (k) in a range from about 1 to about 3.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to implementations, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical implementations of this disclosure and are therefore not to be considered limiting of scope, for the disclosure may admit to other equally effective implementations.

[0010] Figure 1 is a schematic block diagram of a covalent organic framework deposition process, according to one or more implementations described herein.

[0011] Figure 2 is a device, according to one or more implementations described herein.

[0012] Figure 3 is a schematic block diagram of a metal organic framework deposition process, according to one or more implementations described herein.

[0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the Figures. It is contemplated that elements and features of one implementation may be beneficially incorporated in other implementations without further recitation.DETAILED DESCRIPTION

[0014] Implementations of the present disclosure generally relate to low k dielectric films formed, deposited, or otherwise disposed on or over a substrate. More particularly, implementations described herein provide organic framework low k dielectric films for devices and methods for forming the same. It has been discovered that dielectric films having a dielectric constant (k) of 3 or less may be produced using a cyclic vapor deposition process to deposit covalent organic frameworks (COFs) and / or metal organic frameworks (MOFs) on a substrate. In at least one implementation, a cyclic vapor deposition process, such as an Atomic Layer Deposition (ALD) process or a Molecular Layer Deposition (MLD) process, is used to deposit a COF film having a k of 3 or less. In at least one other implementation, a cyclic vapor deposition process is used to deposit a MOF film having a k of 3 or less. Advantageously, the methods disclosed herein produce dielectric films including porous organic frameworks, the pores allow for low-density COF and / or MOF arrangements that contain a large percentage of air, thus reducing the overall k of the film. Additionally, and advantageously, the cyclic vapor deposition processes disclosed herein deposit COF and / or MOF materials in a conformal fashion, reducing composition conformality anomalies.Covalent Organic Frameworks:

[0015] FIG. 1 is a schematic block diagram of a deposition process, in accordance with some implementations. In the process 100, a surface, such as the surface 206 depicted in FIG. 2, is sequentially exposed to a first organic compound and a second organic compound to form a film, such as the film 208, on the surface 206 during acyclic vapor deposition process. The resultant film 208 has a k of 3 or less, such as about 1 to about 3. In at least some implementations, the resultant film 208 includes a COF. In at least some implementations, the process 100 is an ALD process and / or an MLD process.

[0016] In at least some implementations, a substrate, such as substrate 202 depicted in FIG. 2, is provided at operation 102. The substrate 202 may include a material such as crystalline silicon (e.g., Si(100) or Si(111)), silicon oxide, strained silicon, silicon germanium, doped or undoped polysilicon, doped or undoped silicon substrates and patterned or non-patterned substrates silicon on insulator (SOI), carbon doped silicon oxides, silicon nitride, doped silicon, germanium, gallium arsenide, glass, sapphire, or any combination thereof. The substrate 202 may include one or more features 204, e.g., trenches, vias holes, cavities, or a combination thereof, disposed on a surface 206. The film 208 of one or more implementations may be formed on any surface 206 or any portion of the substrate 202, e.g., within or over one or more trenches, vias, holes, cavities, or a combination thereof.

[0017] FIG. 2 depicts a device 200, in accordance with some implementations. The device 200 includes the substrate 202, the features 204 and the film 208 disposed thereon. In at least some implementations, the device 200 may be a microelectronic device. Examples of devices that may be formed using the methods disclosed herein include, but are not limited to, memory devices, process devices, or display devices. In at least some implementations, the film 208, disposed on the surface 206 of the substrate 202, may have a thickness of about 10 A to about 30 A. In at least some implementations, the film 208 is a dielectric film having a k of less than 3, such as about 1, about 1.2, about 1.4, about 1.5, about 1.8, about 2, about 2.2, about 2.4, about 2.4, about 2.5, or about 2.8. In at least some implementations, the film 208 includes an organic framework 210 that may include a plurality of pores 212. The pores 212 may be filled with air. While the organic framework 210 is depicted as having a cubic crystal structure for the sake of simplicity, it is contemplated that the organic framework 210 may have any suitable crystal structure. Examples of suitable crystal structures include, but are not limited to, hexagonal structures, tetragonal structures, single-pore rhombic structures, trigonal structure, dual-pore kagome structure, triple-pore kagome structure, or any combination thereof.

[0018] In at least some implementations, the organic framework 210 of the film 208 is a COF formed using process 100. The COF may including a boroxine, a boronic ester, an imine, an amine, a hydrazine, an azine, a [3-ketoenamine, an imide, a borazine, a 1 ,4-dioxin, a carbon-carbon double bond (C=C), a phenazine, a triazine, a urea, a squaraine, or any combination thereof.

[0019] At operation 104, the surface 206 is exposed to a first organic compound. In at least some implementations, the first organic compound may be introduced into a processing volume while maintaining a pressure of about 10 mTorr to about 100 Torr and a temperature of about 25 °C to about 400 °C. In at least some implementations, the processing volume may be maintained at a pressure of about 25 mTorr to about 100 Torr, such as about 25 mTorr to about 10 Torr, about 25 mTorr to about 5 Torr, about 25 mTorr to about 3 Torr, about 25 mTorr to about 1 Torr, about 25 mTorr to about 500 mTorr, about 25 mTorr to about 250 mTorr, about 1 Torr to about 100 Torr, about 1 Torr to about 50 Torr, about 1 Torr to about 25 Torr, about 1 Torr to about 10 Torr, about 1 Torr to about 5 Torr, about 1 Torr to about 3 Torr, or about 50 Torr to about 100 Torr. In at least some implementations, the processing volume may be maintained at a temperature of about 25 °C to about 350 °C, such as about 25 °C to about 300 °C, about 25 °C to about 200 °C, about 25 °C to about 100 °C, about 100 °C to about 350 °C, about 100 °C to about 300 °C, or about 100 °C to about 200 °C.

[0020] In at least some implementations, the first organic compound may be provided at a flow rate of between about 50 seem to about 10,000 seem. In at least some implementations, the first organic compound may be provided continuously or in a pulsing manner. In some implementations, a carrier gas, such as argon (Ar), helium (He), nitrogen (N2), or combinations thereof, may be supplied with the first organic compound and / or following providing the first organic compound. The carrier gas may be introduced to the processing volume at a flow rate of about 50 seem to about 10,000 seem.

[0021] Optionally, operation 104 may include a first purge process. In at least some implementations, the first purge process may include introducing the carrier gas to the processing volume, after the supply of the first organic compound into the processingvolume has stopped. The first purge process may include flowing the carrier gas to the processing volume at a flow rate of about 50 seem to about 10,000 seem.

[0022] The first organic compound may include a boron compound, an amine, a ketone, an alcohol, a halogen, a nitrile, or any combination thereof. The first organic compound may be free of metal, such that the first organic compound is exclusive of organometallic or metal-organic compounds. In at least some implementations, the first organic compound may be an amine and may include an arylamine, a urea, a hydrazide, a hydrazine, or any combination thereof. In other implementations, the first organic compound may include boronic acid, a diol, a dione, or any combination thereof. For example, in at least some implementations, the first organic compound may include an amine and be hydrazine. In other implementations, the first organic compound may include a halogen and be tetrafluoroterephthalonitrile. In yet other implementations, the first organic compound may include a ketone and be 3,4-dihydroxycyclobutane-1 ,2-dione.

[0023] A “boron compound”, or the like, as used herein, refers to any organic compound containing at least one boron atom. In at least some implementations, the first organic compound includes a boron compound represented by Formula (I):where R of Formula (I) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-Cs alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (I) may be or includemethyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). For example, the boron compound may be benzene diboronic acid, 4-formylphenylboronic acid, or combinations thereof.

[0024] In at least some implementations, the first organic compound includes a boron compound represented by Formula (II):where R of Formula (II) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-Cs alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (II) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (0 iPr), or tert-butyl (tBu).

[0025] An "amine”, or the like, as used herein, refers to any organic compound containing at least one amine group, e.g. a nitrogen with a lone pare of electrons and three bonds. In at least some implementations, the first organic compound may include an arylamine, a urea, a hydrazide, a hydrazine, or any combination thereof. For example, in at least some implementations the first organic compound may be an arylamine represented by Formula (III):where R of Formula (III) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (III) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu).

[0026] As a further example, in at least some implementations the first organic compound may be an urea represented by Formula (IV):where R or Formula (IV) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (IV) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu).

[0027] As a further example, in at least some implementations, the first organic compound may be a hydrazide represented by Formula (V):where R of Formula (V) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (V) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (0 iPr) , or tert-butyl (tBu).

[0028] In at least some implementations, the amine may include a mixed amine compound including, amine functionalities, imine functionalities, enamine functionalities, or any combinations thereof. For example in at least some implementations, the first organic compound may include a mixed amine compound represented by one or more of the Formulas (VI), (VII), and (VIII):where R of Formula (VI), (VII), or (VIII) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (VI), (VII), or (VIII) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu).

[0029] A “ketone”, or the like, as used herein, refers to any organic compound containing at least one ketone, e.g. a carbonyl bound to two carbons. In at least some implementations, the first organic compound includes a dione represented by Formula (IX):where each of R1and R2of Formula (IX) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide,or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (IX) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu).

[0030] An “alcohol”, or the like, as used herein, refers to any organic compound containing at least one hydroxyl, e.g. an oxygen bound to a hydrogen. In at least some implementations, the first organic compound includes a diol represented by Formula (X):where each of R1and R2of Formula (X) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (X) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu).

[0031] A “nitrile”, or the like, as used herein, refers to any organic compound containing at least one nitrile, e.g. a carbon with three bonds to a nitrogen. In at least some implementations, the first organic compound includes a nitrile represented by Formula (XI):where R of Formula (XI) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (XI) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu).

[0032] At operation 106, the surface 206 is exposed to a second organic compound to form the film 208 on the surface 206. In at least some implementations, the second organic compound may be introduced into a processing volume while maintaining a pressure of about 10 mTorr to about 100 Torr and a temperature of about 25 °C to about 400 °C. In at least some implementations, the processing volume may be maintained at a pressure of about 25 mTorr to about 100 Torr, such as about 25 mTorr to about 10 Torr, about 25 mTorr to about 5 Torr, about 25 mTorr to about 3 Torr, about 25 mTorr to about 1 Torr, about 25 mTorr to about 500 mTorr, about 25 mTorr to about 250 mTorr, about 1 Torr to about 100 Torr, about 1 Torr to about 50 Torr, about 1 Torr to about 25 Torr, about 1 Torr to about 10 Torr, about 1 Torr to about 5 Torr, about 1 Torr to about 3 Torr, or about 50 Torr to about 100 Torr. In atleast some implementations, the processing volume may be maintained at a temperature of about 25 °C to about 350 °C, such as about 25 °C to about 300 °C, about 25 °C to about 200 °C, about 25 °C to about 100 °C, about 100 °C to about 350 °C, about 100 °C to about 300 °C, or about 100 °C to about 200 °C.

[0033] In at least some implementations, the second organic compound may be provided at a flow rate of between about 50 seem to about 10,000 seem. In at least some implementations, the second organic compound may be provided continuously or in a pulsing manner. In some implementations, a carrier gas, such as argon (Ar), helium (He), nitrogen (N2), or combinations thereof, may be supplied with the second organic compound and / or following providing the second organic compound. The carrier gas may be introduced to the processing volume at a flow rate of about 50 seem to about 10,000 seem.

[0034] Optionally, operation 106 may include a second purge process. In at least some implementations, the second purge process may include introducing the carrier gas to the processing volume, after the supply of the second organic compound into the processing volume has been stopped. The second purge process may include flowing the carrier gas to the processing volume at a flow rate of about 50 seem to about 10,000 seem.

[0035] The second organic compound may include an alcohol, an aldehyde, an anhydride, a nitrile, an amine, or any combination thereof. The second organic compound may be free of metal, such that the second organic compound is exclusive of organometallic or metal-organic compounds. In at least some implementations, the second organic compound may be an amine and may include an arylamine, a diamine, or any combination thereof. In other implementations, the second organic compound may include a diol, an aromatic aldehyde, or any combination thereof. In other implementations, the second organic compound may include a boron compound.

[0036] In at least some implementations, the second organic compound includes an alcohol. For example, in at least some implementations, the second organic compound may include a diol represented by Formula (X). As a further example, in atleast some implementations, the second organic compound may include an alcohol represented by Formula (XII):where R of Formula (XII) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (XII) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), and tert-butyl (tBu).

[0037] An “aldehyde”, or the like, as used herein, refers to any organic compound containing at least one aldehyde, e.g. a carbonyl bound to a carbon and a hydrogen. In at least some implementations, the second organic compound may include an aldehyde. For example, in at least some implementations, the second organic compound may include an aromatic aldehyde and be 1 ,3,5-triformylphloroglucinol. As a further example, in at least some implementations the first organic compound may be an aromatic aldehyde represented by Formula (XIII):where R of Formula (XIII) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (XIII) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu).

[0038] An “anhydride”, or the like, as used herein, refers to any organic compound containing at least one anhydride. In at least some implementations, the second organic compound may include an anhydride. For example, in at least some implementations the first organic compound may be an anhydride represented by Formula (XIV):where each of R1and R2of Formula (XIV) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine,substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XIV) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu).

[0039] In at least some implementations, the second organic compound includes a nitrile. For example, in at least some implementations, the second organic compound may include a nitrile represented by Formula (XV):where R of Formula (XV) may be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (XV) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu).

[0040] In at least some implementations, the second organic compound includes an amine. For example, in at least some implementations, the second organic compound may include an arylamine represented by Formula (II). As a further example, in at least some implementations, the second organic compound may include a diamine represented by Formula (XVI):where each of R1and R2of Formula (XVI) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XVI) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), and tertbutyl (tBu).

[0041] In at least some implementations, any combination of the first organic compound and the second organic compound may be used to produce the desired COF of the film 208. It is contemplated that any second organic compound may be used as a first organic compound and that any first organic compound may be used as a second organic compound. In at least some implementations, the first organic compound and the second organic compound are the same. The COF of the film 208 may include a boroxine, a boronic ester, an imine, an amine, a hydrazine, an azine, a [3-ketoenamine, an imide, a borazine, a 1 ,4-dioxin, a carbon-carbon double bond (C=C), a phenazine, a triazine, a urea, a squaraine, or any combination thereof.

[0042] In at least some implementations, the first organic compound and the second organic compound include a boron compound. For example, in at least one implementation, the first organic compound and the second organic compound include a boron compound represented by Formula (I). The resultant COF of the film 208 includes a boroxine represented by Formula (XVII):where each of R1, R2, and R3of Formula (XVII) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2if Formula (XVII) may independently be or include of methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu). In at least some implementations, R1, R2, and R3are the same. In at least some implementations, at least two of R1, R2, and R3are the same.

[0043] As a further example, in at least one implementation, the first organic compound and the second organic compound include a boron compound represented by Formula (II). The resultant COF of the film 208 includes a borazine represented by Formula (XVIII):where each of R1, R2, and R3of Formula (XVIII) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1, R2, and R3of Formula (XVIII) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1, R2, and R3are the same. In at least some implementations, at least two of R1, R2, and R3are the same.

[0044] In at least some implementations, the first organic compound and the second organic compound include a nitrile. For example, in at least one implementation, the first organic compound and the second organic compound include a nitrile represented by Formula (XV). The resultant COF of the film 208 includes a triazine represented by Formula (XIX):where each of R1, R2, and R3of Formula (XIX) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1, R2, and R3of Formula (XIX) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), and tertbutyl (tBu). In at least some implementations, R1, R2, and R3are the same. In at least some implementations, at least two of R1, R2, and R3are the same.

[0045] In at least some implementations, the first organic compound includes an amine and the second organic compound include an aldehyde. For example, in at least one implementation, the first organic compound includes an arylamine represented by Formula (III) and the second organic compound includes an aromatic aldehyde represented by Formula (XIII). The resultant COF of the film 208 includes an imine represented by Formula (XX):where each of R1and R2of Formula (XX) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XX) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1and R2are the same.

[0046] As a further example, in at least one implementation, the first organic compound includes a hydrazide represented by Formula (V) and the second organic compound includes an aromatic aldehyde represented by Formula (XIII). The resultant COF of the film 208 includes a hydrazone represented by Formula (XXI):where each of R1and R2or Formula (XXI) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XXI) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu). In at least some implementations, R1and R2are the same.

[0047] As a further example, in at least one implementation, the first organic compound includes a hydrazine and the second organic compound includes an aromatic aldehyde represented by Formula (XIII). The resultant COF of the film 208 includes an azine represented by Formula (XXII):where each of R1and R2of Formula (XXII) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine,substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XXII) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu). In at least some implementations, R1and R2are the same.

[0048] As a further example, in at least one implementation, the first organic compound includes an arylamine represented by Formula (III) and the second organic compound includes 1,3,5-triformylphloroglucinol. The resultant COF of the film 208 includes a [3-ketoenamine represented by Formula (XXIII):where each of R1, R2, and R3of Formula (XXIII) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1, R2, and R3of Formula (XXIII)may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1, R2, and R3are the same. In at least some implementations, at least two of R1, R2, and R3are the same.

[0049] As a further example, in at least one implementation, the first organic compound includes an urea represented by Formula (IV) and the second organic compound includes 1,3,5-triformylphloroglucinol. The resultant COF of the film 208 includes an urea represented by Formula (XXIV):where each of R1, R2, and R3of Formula (XXIV) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1, R2, and R3of Formula (XXIV) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1, R2, and R3are the same. In at least some implementations, at least two of R1, R2, and R3are the same.

[0050] In at least some implementations, the first organic compound includes a boron compound and the second organic compound includes an alcohol. Forexample, in at least one implementation, the first organic compound includes a boron compound represented by Formula (I) and the second organic compound includes a diol represented by Formula (X). The resultant COF of the film 208 includes a boronic ester represented by Formula (XXV):where each of R1, R2, and R3of Formula (XXV) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1, R2, and R3of Formula (XXV) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1, R2, and R3are the same. In at least some implementations, at least two of R1, R2, and R3are the same.

[0051] In at least some implementations, the first organic compound includes an amine and the second organic compound includes an alcohol. For example, in at least one implementation, the first organic compound includes an arylamine represented by Formula (III) and the second organic compound includes an alcohol represented by Formula (XII). The resultant COF of the film 208 includes a [3-ketoenamine represented by Formula (XXVI):where each of R1and R2of Formula (XXVI) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XXVI) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu). In at least some implementations, R1and R2are the same.

[0052] In at least some implementations, the first organic compound includes a ketone and the second organic compound includes an amine. For example, in at least one implementation, the first organic compound includes a dione represented by Formula (IX) and the second organic compound includes a diamine represented by Formula (XVI). The resultant COF of the film 208 includes a phenazine represented by Formula (XXVII):where each of R1, R2, R3, and R4of Formula (XXVII) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1, R2, R3, and R4of Formula (XXVII) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1, R2, R3, and R4are the same. In at least some implementations, at least two of R1, R2, R3, and R4are the same.

[0053] As a further example, in at least one implementation, the first organic compound includes 3, 4-Dihydroxycyclobutane-1 ,2-dione and the second organic compound includes an arylamine represented by Formula (III). The resultant COF of the film 208 includes squaraine represented by Formula (XXVIII):where each of R1and R2of Formula (XXVIII) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide,or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XXVIII) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu). In at least some implementations, R1and R2are the same.

[0054] In at least some implementations, the first organic compound includes an amine and the second organic compound include an anhydride. For example, in at least one implementation, the first organic compound includes an arylamine represented by Formula (III) and the second organic compound includes an anhydride represented by Formula (XIV). The resultant COF of the film 208 includes an imide represented by Formula (XXIX):where each of R1, R2, and R3of Formula (XXIX) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1, R2, and R3of Formula (XXIX)may independently be or include methyl(Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1, R2, and R3are the same. In at least some implementations, at least two of R1, R2, and R3are the same.

[0055] In at least some implementations, the first organic compound includes a halogen and the second organic compound includes an alcohol. For example, in at least one implementation, the first organic compound includes tetrafluoroterephthalonitrile and the second organic compound includes a diol represented by Formula (X). The resultant COF of the film 208 includes a 1,4-dioxin represented by Formula (XXX):where each of R1, R2, R3, and R4of Formula (XXX) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1, R2, R3, and R4of Formula (XXX) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1, R2, R3,and R4are the same. In at least some implementations, at least two of R1, R2, R3, and R4are the same.

[0056] In at least some implementations, the first organic compound includes a nitrile and the second organic compound include an aldehyde. For example, in at least one implementation, the first organic compound includes a nitrile represented by Formula (XI) and the second organic compound includes an aromatic aldehyde represented by Formula (III). The resultant COF of the film 208 includes a carboncarbon double bond (C=C). The product may be represented by Formula (XXXI):where each of R1and R2of Formula (XXXI) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XXXI) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu). In at least some implementations, R1and R2are the same.

[0057] In at least some implantations, operations 104 and 106 are performed simultaneously, such that the surface 206 is exposed to the first organic compound and the second organic compound at the same time. In such implementations, the process 100 may be a chemical vapor deposition (CVD) process.

[0058] In at least some implementations, the process 100 may further include exposing the surface 206 to a third organic compound. Any first organic compound or second organic compound may be used as the third organic compound. The third organic compound may be used to form a COF having a double-linkage. For example, in at least one implementation, the first organic compound includes a diol represented by Formula (X), the second organic compound includes a boron compound represented by Formula (I), such as 4-Formylphenylboronic acid, in which the R of Formula (I) is an aldehyde, and the third organic compound includes an arylamine represented by Formula (III). The resultant COF of the film 208 includes a boronic ester and an imine.

[0059] The process 100 may optionally include treating the film 208 after operation 106. In at least some implementations, treating the film includes a plasma treatment, a UV treatment, a thermal treatment, or any combination thereof. In at least some implementations, the treated film may be a dielectric film, such as the film 208, having a k of less than 3, such as about 1 , about 1.2, about 1.4, about 1.5, about 1.8, about 2, about 2.2, about 2.4, about 2.4, about 2.5, or about 2.8.Metal Organic Frameworks:

[0060] FIG. 3 is a schematic block diagram of a deposition process, in accordance with some implementations. In the process 300, a surface, such as the surface 206, is sequentially exposed to a metal compound and an organic compound to form a film, such as the film 208, on the surface 206 during a cyclic vapor deposition process. The resultant film 208 has a k of 3 or less, such as about 1 to about 3. In at least some implementations, the resultant film 208 includes a MOF and has a k of less than 3, such as about 1 , about 1.2, about 1.4, about 1.5, about 1.8, about 2, about 2.2, about 2.4, about 2.4, about 2.5, or about 2.8. In at least some implementations, the process 100 is an ALD process and / or an MLD process.

[0061] In at least some implementations, the organic framework 210 of the film 208 is a MOF formed using process 300. The MOF may include a plurality of metal nodes connected by a plurality of organic ligands, the organic ligands may include a dicarboxylic acid, an adenine, an amine functionalized triazole, an aminefunctionalized tetrazole, an amine functionalized benzene, an amine functionalized bipyrazole, or any combination thereof.

[0062] In at least some implementations, a substrate, such as substrate 202 depicted in FIG. 2 and described above, is provided at operation 302.

[0063] At operation 304, the surface 206 is exposed to a metal compound. In at least some implementations, the metal compound may be introduced into a processing volume while maintaining a pressure of about 10 mTorr to about 100 Torr and a temperature of about 25 °C to about 400 °C. In at least some implementations, the processing volume may be maintained at a pressure of about 25 mTorr to about 100 Torr, such as about 25 mTorr to about 10 Torr, about 25 mTorr to about 5 Torr, about 25 mTorr to about 3 Torr, about 25 mTorr to about 1 Torr, about 25 mTorr to about 500 mTorr, about 25 mTorr to about 250 mTorr, about 1 Torr to about 100 Torr, about 1 Torr to about 50 Torr, about 1 Torr to about 25 Torr, about 1 Torr to about 10 Torr, about 1 Torr to about 5 Torr, about 1 Torr to about 3 Torr, or about 50 Torr to about 100 Torr. In at least some implementations, the processing volume may be maintained at a temperature of about 25 °C to about 350 °C, such as about 25 °C to about 300 °C, about 25 °C to about 200 °C, about 25 °C to about 100 °C, about 100 °C to about 350 °C, about 100 °C to about 300 °C, or about 100 °C to about 200 °C. The metal compound may include tin, aluminum, chromium, cobalt, alloys thereof, or any combination thereof.

[0064] In at least some implementations, the metal compound may be provided at a flow rate of between about 50 seem to about 10,000 seem. In at least some implementations, the metal compound may be provided continuously or in a pulsing manner. In some implementations, a carrier gas, such as argon (Ar), helium (He), nitrogen (N2), or combinations thereof may be supplied with the metal compound and / or following providing the metal compound. The carrier gas may be introduced to the processing volume at a flow rate of about 50 seem to about 10,000 seem.

[0065] Optionally, operation 304 may include a first purge process. In at least some implementations, the first purge process may include introducing the carrier gas to the processing volume, after the supply of the first organic compound into the processingvolume has stopped. The first purge process may include flowing the carrier gas to the processing volume at a flow rate of about 50 seem to about 10,000 seem.

[0066] At operation 306, the surface 206 is exposed to an organic compound to form the film 208 on the surface 206. In at least some implementations, the organic compound may be introduced into a processing volume while maintaining a pressure of about 10 mTorr to about 100 Torr and a temperature of about 25 °C to about 400 °C. In at least some implementations, the processing volume may be maintained at a pressure of about 25 mTorr to about 100 Torr, such as about 25 mTorr to about 10 Torr, about 25 mTorr to about 5 Torr, about 25 mTorr to about 3 Torr, about 25 mTorr to about 1 Torr, about 25 mTorr to about 500 mTorr, about 25 mTorr to about 250 mTorr, about 1 Torr to about 100 Torr, about 1 Torr to about 50 Torr, about 1 Torr to about 25 Torr, about 1 Torr to about 10 Torr, about 1 Torr to about 5 Torr, about 1 Torr to about 3 Torr, or about 50 Torr to about 100 Torr. In at least some implementations, the processing volume may be maintained at a temperature of about 25 °C to about 350 °C, such as about 25 °C to about 300 °C, about 25 °C to about 200 °C, about 25 °C to about 100 °C, about 100 °C to about 350 °C, about 100 °C to about 300 °C, or about 100 °C to about 200 °C.

[0067] In at least some implementations, the organic compound may be provided at a flow rate of between about 50 seem to about 10,000 seem. In at least some implementations, the organic compound may be provided continuously or in a pulsing manner. In some implementations, a carrier gas, such as argon (Ar), helium (He), nitrogen (N2), or combinations thereof, may be supplied with the organic compound and / or following providing the organic compound. The carrier gas may be introduced to the processing volume at a flow rate of about 50 seem to about 10,000 seem.

[0068] Optionally, operation 306 may include a second purge process. In at least some implementations, the second purge process may include introducing the carrier gas to the processing volume, after the supply of the second organic compound into the processing volume has stopped. The second purge process may include flowing the carrier gas to the processing volume at a flow rate of about 50 seem to about 10,000 seem.

[0069] The organic compound may include a carboxylic acid, an amine, an imine, or any combination thereof. In at least some implementations, the organic compound may be an amine and include an adenine, an amine functionalized triazole, an amine functionalized tetrazole, an amine functionalized benzene, an amine functionalized bipyrazole, or any combination thereof. In at least some implementations, the organic compound may be a carboxylic acid and include a dicarboxylic acid. The dicarboxylic acid may be an unsaturated dicarboxylic acid, a substituted dicarboxylic acid, an aromatic dicarboxylic acid, or any combination thereof. In at least some implementations, the dicarboxylic acid may be acetylenedicarboxylic acid, terephthalic, butanedioic acid, fumaric acid, or any combination thereof.

[0070] In at least some implementations the organic compound may be an adenine represented by Formula (XXXII):where R of Formula (XXXII) may be hydrogen (H), substituted or unsubstituted Ci-Cs alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-Cs alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (XXXII)may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). For example, in at least one implementation, the organic compound is adenine.

[0071] In at least some implementations the organic compound may be an amine functionalized triazole represented by Formula (XXXIII):where each of R1and R2of Formula (XXXIII) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, each of R1and R2of Formula (XXXIII) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tertbutyl (tBu). In at least some implementations, R1and R2are the same. For example, in at least one implementation, the organic compound is 3,5-diamino-1 ,2,4-triazole.

[0072] In at least some implementations the organic compound may be an amine functionalized tetrazole represented by Formula (XXXIV):(XXXIV)where R of Formula (XXXIV) may be hydrogen (H), substituted or unsubstituted Ci-Cs alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-Cs alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (XXIV) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). For example, in at least one implementation, the organic compound is 5-aminotetrazole.

[0073] In at least some implementations the organic compound may be an amine functionalized benzene represented by Formula (XXXV):

[0074] where each of R1and R2of Formula (XXXV) may independently be hydrogen (H), substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-C5 alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combinationthereof. In some implementations, each of R1and R2of Formula (XXXV) may independently be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), or tert-butyl (tBu). In at least some implementations, R1and R2are the same. For example, in at least one implementation, the organic compound is 1,2-diaminobenzene.

[0075] In at least some implementations the organic compound may be an amine functionalized bipyrazole represented by Formula (XXXVI):where R of Formula (XXXVI) may be hydrogen (H), substituted or unsubstituted Ci-Cs alkyl, substituted or unsubstituted C1-C5 alkylene, substituted or unsubstituted C1-Cs alkynylene, substituted or unsubstituted C1-C5 alkyoxy, substituted or unsubstituted C1-C5 alkylamine, halide, e.g., chlorine, bromine, fluorine, or iodine, substituted or unsubstituted C1-C5 alkyloxyamine, hydroxyl, carboxylic acid, boric acid, aldehyde, benzene, substituted benzene, amine, amide, or nitrile. In an implementation, the substituted C1-C5 alkyl, substituted C1-C5 alkylene, substituted C1-C5 alkynylene, substituted C1-C5 alkyoxy, substituted C1-C5 alkylamine, substituted C1-C5 alkyloxyamine, and / or substituted benzene may include one or more of an oxygen atom, a nitrogen atom, a sulfur atom, a chlorine atom, a fluorine atom, a bromine atom, an iodine atom, or a combination thereof. In some implementations, R of Formula (XXXVI) may be or include methyl (Me), methoxy (OMe), ethyl (Et), ethoxy (OEt), isopropyl (iPr), isoproproxy (OiPr), and tert-butyl (tBu). For example, in at least one implementation, the organic compound is 3-amino-4,4’-bipyrazole.

[0076] In at least some implantations, operations 304 and 306 are performed simultaneously, such that the surface 206 is exposed to the metal compound and theorganic compound at the same time. In such implementations, the process 300 may be a chemical vapor deposition (CVD) process.

[0077] The process 300 may optionally include treating the film 208 after operation 106. In at least some implementations, treating the film includes a plasma treatment, a UV treatment, a thermal treatment, or any combination thereof. In at least some implementations, the treated film may be a dielectric film, such as the film 208, having a k of less than 3, such as about 1 , about 1.2, about 1.4, about 1.5, about 1.8, about 2, about 2.2, about 2.4, about 2.4, about 2.5, or about 2.8.

[0078] Implementations of the present disclosure further relate to any one or more of the following non-limiting examples 1-26:

[0079] Example 1. A process for depositing a film, comprising: exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, wherein the film has a dielectric constant (k) of 3 or less.

[0080] Example 2. A process for depositing a film, comprising: sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, wherein the film has a dielectric constant (k) of 3 or less.

[0081] Example 3. A process for depositing a film, comprising: sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process; and treating the film to form a treated film having a dielectric constant (k) of 3 or less.

[0082] Example 4. A process for depositing a film, comprising: simultaneously exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a chemical vapor deposition process, wherein the film has a dielectric constant (k) of 3 or less, and the film comprises a boroxine, a boronic ester, an imine, an amine, a hydrazine, an azine, a [3-ketoenamine, an imide, a borazine, a 1 ,4-dioxin, a carbon-carbon double bond (C=C), a phenazine, a triazine, a urea, a squaraine, or any combination thereof.

[0083] Example 5. The process according to any one of examples 1 -3, wherein the film comprises a boroxine, a boronic ester, an imine, an amine, a hydrazine, an azine, a [3-ketoenamine, an imide, a borazine, a 1 ,4-dioxin, a carbon-carbon double bond (C=C), a phenazine, a triazine, a urea, a squaraine, or any combination thereof.

[0084] Example 6. The process according to any one of examples 1 -4, wherein the first organic compound comprises a boron compound, an amine, a ketone, an alcohol, a halogen, a nitrile, or any combination thereof; and the second organic compound comprises an alcohol, an aldehyde, an anhydride, a nitrile, an amine, or any combination thereof.

[0085] Example 7. The process according to any one of examples 1 -4, wherein the first organic compound comprises an arylamine, a urea, a hydrazide, a hydrazine, or any combination thereof.

[0086] Example 8. The process according to any one of examples 1 -4, wherein the first organic compound comprises boronic acid, a diol, a dione, or any combination thereof.

[0087] Example 9. The process according to any one of examples 1 -3, wherein the cyclic vapor deposition process is an Atomic Layer Deposition (ALD) process or a Molecular Layer Deposition (MLD) process.

[0088] Example 10. The process according to any one of examples 1-4, further comprising treating the film after the cyclic vapor deposition process or the chemical vapor deposition process, wherein treating the film comprises a plasma treatment, a UV treatment, a thermal treatment, or any combination thereof.

[0089] Example 11. The process according to any one of examples 1-4, wherein the second organic compound comprises a diol, an aromatic aldehyde, an arylamine, a diamine, or any combination thereof.

[0090] Example 12. The process according to any one of examples 1-4, wherein the first organic compound comprises an amine and the second organic compound comprises an aldehyde.

[0091] Example 13. The process according to any one of examples 1-4, wherein the first organic compound and the second organic compound are the same.

[0092] Example 14. A process for depositing a film, comprising: providing a substrate comprising a plurality of features disposed on a surface; and exposing the surface to a metal compound and an organic compound, to form a film on the surface during a cyclic vapor deposition process, wherein the film has a dielectric constant (k) of 3 or less; and wherein the metal compound comprises tin, aluminum, chromium, cobalt, or any combination thereof.

[0093] Example 15. A process for depositing a film, comprising: providing a substrate comprising a plurality of features disposed on a surface; and sequentially exposing the surface to a metal compound and an organic compound, to form a film on the surface during a cyclic vapor deposition process, wherein the film has a dielectric constant (k) of 3 or less; and wherein the metal compound comprises tin, aluminum, chromium, cobalt, or any combination thereof.

[0094] Example 16. A process for depositing a film, comprising: providing a substrate comprising a plurality of features disposed on a surface; and sequentially exposing the surface to a metal compound and an organic compound, to form a film on the surface during a cyclic vapor deposition process; and treating the film to form a treated film having a dielectric constant (k) of 3 or less; and wherein the metal compound comprises tin, aluminum, chromium, cobalt, or any combination thereof.

[0095] Example 17. A process for depositing a film, comprising: providing a substrate comprising a plurality of features disposed on a surface; and simultaneously exposing the surface to a metal compound and an organic compound, to form a film on the surface during a chemical vapor deposition process, wherein the film has a dielectric constant (k) of 3 or less; and wherein the metal compound comprises tin, aluminum, chromium, cobalt, or any combination thereof.

[0096] Example 18. The process according to any one of examples 14-17, wherein the organic compound comprises a carboxylic acid, an amine, an imine, or any combination thereof.

[0097] Example 19. The process according to any one of examples 14-17, wherein the organic compound comprises an amine, and wherein the amine comprises an adenine, an amine functionalized triazole, an amine functionalized tetrazole, an amine functionalized benzene, an amine functionalized bipyrazole, or any combination thereof.

[0098] Example 20. The process according to any one of examples 14-17, wherein the organic compound comprises an amine, and wherein the amine comprises adenine, 3,5-diamino-1,2,4-triazole, 5-aminotetrazole, 1 ,2-diaminobenzene, 3-amino-4,4’-bipyrazole, or any combination thereof.

[0099] Example 21. The process according to any one of examples 14-17, wherein the organic compound comprises a carboxylic acid, and wherein the carboxylic acid comprises a dicarboxylic acid.

[0100] Example 22. The process of example 21, wherein the dicarboxylic acid comprises an unsaturated dicarboxylic acid, a substituted dicarboxylic acid, an aromatic dicarboxylic acid, or any combination thereof.

[0101] Example 23. The process of example 21, wherein the dicarboxylic acid comprises acetylenedicarboxylic acid, terephthalic, butanedioic acid, fumaric acid, or any combination thereof.

[0102] Example 24. A device, comprising a substrate comprising a plurality of features disposed on a surface; and a film conformally disposed on the surface and the plurality of features, the film comprising an organic framework comprising a plurality of pores, and the film having a thickness in a range from about 10 A to about 30 A and a dielectric constant (k) in a range from about 1 to about 3.

[0103] Example 25. The device of example 24, wherein the organic framework is a metal organic framework (MOF) comprising a plurality of metal nodes connected by a plurality of organic ligands, the organic ligands comprising a dicarboxylic acid, an adenine, an amine functionalized triazole, an amine functionalized tetrazole, an amine functionalized benzene, an amine functionalized bipyrazole, or any combination thereof.

[0104] Example 26. The device of example 24, wherein the organic framework is a covalent organic framework (COF) comprising a boroxine, a boronic ester, an imine, an amine, a hydrazine, an azine, a [3-ketoenamine, an imide, a borazine, a 1 ,4-dioxin, a carbon-carbon double bond (C=C), a phenazine, a triazine, a urea, a squaraine, or any combination thereof.

[0105] Overall, the present disclosure provides organic framework low k dielectric films and processes for forming the same. The processes generally include using a cyclic vapor deposition process to deposit COFs and / or MOFs having a k of 3 or less on a substrate. The methods disclosed herein produce dielectric films including porous organic frameworks, the pores allow for low-density COF and / or MOF arrangements that contain a large percentage of air, thus reducing the overall k of the film. Additionally, the cyclic vapor deposition processes disclosed herein deposit COF and / or MOF materials in a conformal fashion, reducing composition conformality anomalies.

[0106] While the foregoing is directed to implementations of the present disclosure, other and further implementations of the disclosure may be devised without departing from the basic scope thereof. The present disclosure also contemplates that one or more aspects of the implementations described herein may be substituted in for one or more of the other aspects described. The scope of the disclosure is determined by the claims that follow.

[0107] Certain implementations and features have been described using a set of numerical upper limits and a set of numerical lower limits. It should be appreciated that ranges including the combination of any two values, e.g., the combination of any lower value with any upper value, the combination of any two lower values, and / or the combination of any two upper values are contemplated unless otherwise indicated. Certain lower limits, upper limits and ranges appear in one or more claims below.

Claims

1. What is claimed is:

1. A process for depositing a film, comprising:sequentially exposing a surface to a first organic compound and a second organic compound to form a film on the surface during a cyclic vapor deposition process, wherein the film has a dielectric constant (k) of 3 or less.

2. The process of claim 1 , wherein the film comprises a boroxine, a boronic ester, an imine, an amine, a hydrazine, an azine, a [3-ketoenamine, an imide, a borazine, a 1 ,4-dioxin, a carbon-carbon double bond (C=C), a phenazine, a triazine, a urea, a squaraine, or any combination thereof.

3. The process of claim 1 , wherein the first organic compound comprises a boron compound, an amine, a ketone, an alcohol, a halogen, a nitrile, or any combination thereof; and the second organic compound comprises an alcohol, an aldehyde, an anhydride, a nitrile, an amine, or any combination thereof.

4. The process of claim 1, wherein the first organic compound comprises an arylamine, a urea, a hydrazide, a hydrazine, or any combination thereof.

5. The process of claim 1 , wherein the first organic compound comprises boronic acid, a diol, a dione, or any combination thereof.

6. The process of claim 1 , wherein the cyclic vapor deposition process is an Atomic Layer Deposition (ALD) process or a Molecular Layer Deposition (MLD) process.

7. The process of claim 1 , further comprising treating the film after the cyclic vapor deposition process, wherein treating the film comprises a plasma treatment, a UV treatment, a thermal treatment, or any combination thereof.

8. The process of claim 1, wherein the second organic compound comprises a diol, an aromatic aldehyde, an arylamine, a diamine, or any combination thereof.

9. The process of claim 1, wherein the first organic compound comprises an amine and the second organic compound comprises an aldehyde.

10. The process of claim 1, wherein the first organic compound and the second organic compound are the same.

11. A process for depositing a film, comprising:providing a substrate comprising a plurality of features disposed on a surface; andsequentially exposing the surface to a metal compound and an organic compound, to form a film on the surface during a cyclic vapor deposition process, wherein the film has a dielectric constant (k) of 3 or less; and wherein the metal compound comprises tin, aluminum, chromium, cobalt, or any combination thereof.

12. The process of claim 11, wherein the organic compound comprises a carboxylic acid, an amine, an imine, or any combination thereof.

13. The process of claim 11 , wherein the organic compound comprises an amine, and wherein the amine comprises an adenine, an amine functionalized triazole, an amine functionalized tetrazole, an amine functionalized benzene, an amine functionalized bipyrazole, or any combination thereof.

14. The process of claim 11 , wherein the organic compound comprises an amine, and wherein the amine comprises adenine, 3,5-diamino-1 ,2,4-triazole, 5-aminotetrazole, 1 ,2-diaminobenzene, 3-amino-4, 4’ -bipyrazole, or any combination thereof.

15. The process of claim 11, wherein the organic compound comprises a carboxylic acid, and wherein the carboxylic acid comprises a dicarboxylic acid.

16. The process of claim 15, wherein the dicarboxylic acid comprises an unsaturated dicarboxylic acid, a substituted dicarboxylic acid, an aromatic dicarboxylic acid, or any combination thereof.

17. The process of claim 15, wherein the dicarboxylic acid comprises acetylenedicarboxylic acid, terephthalic, butanedioic acid, fumaric acid, or any combination thereof.

18. A device, comprisinga substrate comprising a plurality of features disposed on a surface; and a film conformally disposed on the surface and the plurality of features, the film comprising an organic framework comprising a plurality of pores, and the film having a thickness in a range from about 10 A to about 30 A and a dielectric constant (k) in a range from about 1 to about 3.

19. The device of claim 18, wherein the organic framework is a metal organic framework (MOF) comprising a plurality of metal nodes connected by a plurality of organic ligands, the organic ligands comprising a dicarboxylic acid, an adenine, an amine functionalized triazole, an amine functionalized tetrazole, an amine functionalized benzene, an amine functionalized bipyrazole, or any combination thereof.

20. The device of claim 18, wherein the organic framework is a covalent organic framework (COF) comprising a boroxine, a boronic ester, an imine, an amine, a hydrazine, an azine, a [3-ketoenamine, an imide, a borazine, a 1 ,4-dioxin, a carboncarbon double bond (C=C), a phenazine, a triazine, a urea, a squaraine, or any combination thereof.

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