Asymmetric doherty power amplifier and electronic apparatus comprising same

Abstract

According to an embodiment, a Doherty power amplifier may comprise: a carrier amplifier that provides first power; a peaking amplifier that provides second power higher than the first power; a transformer including a primary winding and a secondary winding; a first transmission line that is disposed between a first terminal of the primary winding and the carrier amplifier and is for providing a first characteristic impedance; a second transmission line that is disposed between a second terminal of the primary winding and the peaking amplifier and is for providing a second characteristic impedance; and a third transmission line that is disposed between the second terminal of the primary winding and the peaking amplifier and is for providing a compensation characteristic impedance. The magnitude of the compensation characteristic impedance may correspond to the magnitude of the first characteristic impedance. The secondary winding may be connected to a load impedance of the Doherty power amplifier.

Description

Asymmetric Doherty power amplifier and electronic device including the same

[0001] The present disclosure relates to an asymmetric Doherty power amplifier and an electronic device comprising said asymmetric Doherty power amplifier.

[0002] Products equipped with multiple antennas are being developed to enhance communication performance. As the number of antennas increases, the number of RF components (e.g., power amplifiers (PAs)) required to process signals received or radiated through the antennas also increases.

[0003] The information described above may be provided as related art for the purpose of aiding understanding of the present disclosure. No claim or determination is made as to whether any of the foregoing may be applied as prior art related to the present disclosure.

[0004] According to one embodiment, a Doherty power amplifier may include a carrier amplifier providing a first power, a peaking amplifier providing a second power higher than the first power, a transformer including a primary winding and a secondary winding, a first transmission line disposed between a first terminal of the primary winding and the carrier amplifier to provide a first characteristic impedance, a second transmission line disposed between a second terminal of the primary winding and the peaking amplifier to provide a second characteristic impedance, and a third transmission line disposed between the second terminal of the primary winding and the peaking amplifier to provide a compensation characteristic impedance. The magnitude of the compensation characteristic impedance may correspond to the magnitude of the first characteristic impedance. The secondary winding may be connected to the load impedance of the Doherty power amplifier.

[0005] According to one embodiment, an electronic device including a Doherty power amplifier may include a plurality of antennas, a plurality of filters for the plurality of antennas, a plurality of RF processing circuits for the plurality of antennas, and a processor. Each of the plurality of RF processing circuits may include a Doherty power amplifier. The Doherty power amplifier may include a carrier amplifier providing a first power, a peaking amplifier providing a second power higher than the first power, a transformer including a primary winding and a secondary winding, a first transmission line disposed between a first terminal of the primary winding and the carrier amplifier and for providing a first characteristic impedance, a second transmission line disposed between a second terminal of the primary winding and the peaking amplifier and for providing a second characteristic impedance, and a third transmission line disposed between the second terminal of the primary winding and the peaking amplifier and for providing a compensation characteristic impedance. The magnitude of the above compensation characteristic impedance may correspond to the magnitude of the above first characteristic impedance. The above second winding may be connected to the load impedance of the above Doherty power amplifier.

[0006] Figure 1 illustrates a wireless communication system.

[0007] FIG. 2a illustrates examples of network entities of electronic devices.

[0008] FIG. 2b illustrates an example of an electronic device including a Doherty power amplifier (PA).

[0009] Figure 2c illustrates another example of an electronic device including a Doherty power amplifier.

[0010] Figure 3 illustrates an example of a Doherty power amplifier.

[0011] Figure 4 illustrates an example of a Doherty power amplifier.

[0012] Figure 5a illustrates an example of a current-coupled asymmetric Doherty amplifier circuit.

[0013] Figure 5b illustrates an example of output voltage according to the input voltage of a carrier amplifier and a peaking amplifier.

[0014] Figure 5c illustrates an example of the performance of a Doherty amplifier including a current-coupled asymmetric Doherty amplifier circuit.

[0015] Figure 6 illustrates an example of a voltage-coupled asymmetric Doherty amplifier circuit.

[0016] Figure 7a illustrates an example of an equivalent circuit of a Doherty amplifier circuit at maximum output power.

[0017] Figure 7b illustrates an example of the equivalent circuit of a Doherty amplifier circuit at back-off output power.

[0018]

[0019] The terms used in this disclosure are used merely to describe specific embodiments and are not intended to limit the scope of other embodiments. A singular expression may include a plural expression unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as generally understood by those skilled in the art described in this disclosure. Terms used in this disclosure that are defined in a general dictionary may be interpreted as having the same or similar meaning as they have in the context of the relevant technology, and are not to be interpreted in an ideal or overly formal sense unless explicitly defined in this disclosure. In some cases, even terms defined in this disclosure are not to be interpreted to exclude the embodiments of this disclosure.

[0020] In the various embodiments of the present disclosure described below, a hardware-based approach is described as an example. However, since the various embodiments of the present disclosure include techniques using both hardware and software, the various embodiments of the present disclosure do not exclude a software-based approach.

[0021] Terms used in the following description to refer to signals (e.g., signal, information, message, signaling), terms referring to network entities (e.g., electronic device, unit, RU, DU, CU, module, communication module, RF unit, RF module, RF circuit), terms referring to components of a device, terms referring to parts of an electronic device (e.g., substrate, PCB (print circuit board), FPCB (flexible PCB), module, antenna, antenna element, circuit, processor, chip, component, device), and terms referring to circuits (e.g., PCB, FPCB, signal line, feeding line, data line, RF signal line, antenna line, RF path, RF module, RF circuit, splitter, divider, coupler, combiner) are examples provided for the convenience of explanation. Accordingly, the present disclosure is not limited to the terms described below, and other terms having equivalent technical meanings may be used. Additionally, terms such as '...part', '...device', '...object', '...body' used below may refer to at least one shape structure or a unit that processes a function.

[0022] Additionally, in this disclosure, expressions of "greater than" or "less than" may be used to determine whether a specific condition is satisfied or fulfilled; however, this is merely for the purpose of expressing an example and does not exclude descriptions of "greater than" or "less than." Conditions described as "greater than" may be replaced with "greater than," conditions described as "less than" may be replaced with "less than," and conditions described as "greater than and less than" may be replaced with "greater than and less than." Furthermore, "A" to "B" below refer to at least one of elements from A (including A) to B (including B). Below, "C" and / or "D" refers to including at least one of "C" or "D," i.e., {"C", "D", "C" and "D"}.

[0023] Figure 1 illustrates a wireless communication system.

[0024] Referring to FIG. 1, FIG. 1 illustrates a base station (110) and a terminal (120) as part of nodes using a wireless channel in a wireless communication system. FIG. 1 illustrates only one base station, but the wireless communication system may include other base stations identical or similar to the base station (110).

[0025] A base station (110) is a network infrastructure that provides wireless access to a terminal (120). The base station (110) has coverage defined based on the distance over which it can transmit signals. In addition to being a base station, the base station (110) may be referred to as an 'access point (AP)', 'eNodeB (eNB)', '5G node (5th generation node)', 'next generation nodeB (gNB)', 'wireless point', 'transmission / reception point (TRP)', or other terms having an equivalent technical meaning.

[0026] A terminal (120) is a device used by a user and communicates with a base station (110) via a wireless channel. The link from the base station (110) to the terminal (120) is referred to as a downlink (DL), and the link from the terminal (120) to the base station (110) is referred to as an uplink (UL). Additionally, although not shown in FIG. 1, the terminal (120) and another terminal can communicate with each other via a wireless channel. In this case, the link between the terminal (120) and another terminal (device-to-device link, D2D) is referred to as a sidelink, and the sidelink may be used interchangeably with the PC5 interface. In some other embodiments, the terminal (120) may be operated without user involvement. According to one embodiment, the terminal (120) is a device that performs machine type communication (MTC) and may not be carried by the user. Additionally, according to one embodiment, the terminal (120) may be a narrowband (NB)-Internet of Things (IoT) device. The terminal (120) may be referred to as 'user equipment (UE)', 'customer premises equipment (CPE)', 'mobile station', 'subscriber station', 'remote terminal', 'wireless terminal', 'electronic device', or 'user device' or other terms having an equivalent technical meaning.

[0027] A base station (110) can transmit a signal to a terminal (120). The terminal (120) can receive a signal from the base station (110). According to one embodiment, a circuit including a Doherty power amplifier according to embodiments of the present disclosure may be included in the base station (110). The terminal (120) can transmit a signal to the base station (110). The base station (110) can receive a signal from the terminal (120). According to one embodiment, a circuit including a Doherty power amplifier according to embodiments of the present disclosure may be included in the terminal (120). For example, the base station (110) and the terminal (120) can transmit and receive wireless signals in a relatively low frequency band (e.g., FR 1 (frequency range 1) of NR). Additionally, for example, the base station (110) and the terminal (120) can transmit and receive radio signals in a relatively high frequency band (e.g., FR 2 of NR (or, FR 2-1, FR 2-2, FR 2-3), FR 3) and a millimeter wave (mmWave) band (e.g., 28 GHz, 30 GHz, 38 GHz, 60 GHz)). To improve channel gain, the base station (110) and the terminal (120) can perform beamforming. Here, beamforming may include transmit beamforming and receive beamforming. The base station (110) and the terminal (120) can impart directivity to the transmit signal or the receive signal. To this end, the base station (110) and the terminal (120) can select serving beams through a beam search or beam management procedure. After serving beams are selected, subsequent communication can be performed through a resource that has a QCL relationship with the resource that transmitted the serving beams.

[0028] Conventionally, in communication systems with a relatively large cell radius of base stations, each base station was installed to include the functions of a digital processing unit (or DU (distributed unit)) and a radio frequency (RF) processing unit (or RU (radio unit)). However, as high frequency bands are used in 4G (4th generation) and / or subsequent communication systems (e.g., 5G) and the cell coverage of base stations decreases, the number of base stations required to cover a specific area has increased. Consequently, the burden of installation costs for operators to install base stations has also increased. To minimize base station installation costs, a structure has been proposed in which the DU and RU of a base station are separated, with one or more RUs connected to a single DU via a wired network, and one or more geographically distributed RUs deployed to cover a specific area. Below, base station deployment structures and extension examples according to various embodiments of the present disclosure are described with reference to FIG. 2a.

[0029] FIG. 2a illustrates examples of network entities of an electronic device. For example, the electronic device may include the base station (110) of FIG. 1. The base station (110) may be separated into two or more entities through a fronthaul. A fronthaul refers to an interface between a DU and an RU between a wireless network and a core network, unlike a backhaul. FIG. 2a illustrates an example of a fronthaul structure between a DU and a single RU, but this is merely for convenience of explanation and the present disclosure is not limited thereto. In other words, embodiments of the present disclosure may also be applied to a fronthaul structure between a single DU and multiple RUs. For example, embodiments of the present disclosure may be applied to a fronthaul structure between a single DU and two RUs. Additionally, embodiments of the present disclosure may also be applied to a fronthaul structure between a single DU and three RUs.

[0030] Referring to FIG. 2a, the base station (110) may include a DU (210) and an RU (220). The fronthole (215) between the DU (210) and the RU (220) may be operated via an Fx interface. For the operation of the fronthole (215), interfaces such as CPRI (common public radio interface), eCPRI (enhanced common public radio interface), and ROE (radio over ethernet) may be used.

[0031] As communication technology develops, mobile data traffic increases, and consequently, the bandwidth requirements for the fronthaul between the digital unit and the wireless unit have increased significantly. In a deployment such as a C-RAN (centralized / cloud radio access network), the DU (210) performs functions for PDCP (packet data convergence protocol), RLC (radio link control), MAC (media access control), and PHY (physical), and the RU (220) can be implemented to perform more functions for the PHY layer in addition to RF (radio frequency) functions.

[0032] The DU (210) may perform upper-layer functions of the wireless network. For example, the DU (210) may perform functions of the MAC layer and parts of the PHY layer. Here, parts of the PHY layer are functions of the PHY layer performed at a higher level, and may include, for example, channel encoding (or channel decoding), scrambling (or descrambling), modulation (or demodulation), and layer mapping (or layer demapping). According to one embodiment, if the DU (210) conforms to the O-RAN standard, it may be referred to as an O-DU (O-RAN DU). The DU (210) may be represented as a first network entity for a base station (e.g., gNB) in the embodiments of the present disclosure as needed.

[0033] The RU (220) can perform lower-layer functions of the wireless network. For example, the RU (220) can perform RF functions, which are part of the PHY layer. Here, part of the PHY layer refers to functions of the PHY layer that are performed at a level relatively lower than that of the DU (210), and may include, for example, iFFT transformation (or FFT transformation), CP insertion (CP removal), and digital beamforming. The RU (220) may be referred to as an 'access unit (AU)', 'access point (AP)', 'transmission / reception point (TRP)', 'remote radio head (RRH)', 'radio unit (RU)', or other terms having an equivalent technical meaning. According to one embodiment, if the RU (220) conforms to the O-RAN standard, it may be referred to as an O-RU (O-RAN RU). The RU (220) may be represented as a second network entity for a base station (e.g., gNB) in embodiments of the present disclosure as needed. According to one embodiment, a circuit including a Doherty power amplifier may be included in the RU (220) of a base station (110) having a distributed arrangement.

[0034] FIG. 2b illustrates an example of an electronic device including a Doherty power amplifier (PA). For example, the electronic device may be a base station (110). For example, the electronic device may be an RU (220). For example, the electronic device may be a terminal (120).

[0035] Referring to FIG. 2b, the electronic device may include a plurality of antennas (250-1, 250-2, ..., 250-N) (N is an integer greater than or equal to 2). The electronic device may include an RF processing circuit to transmit a wireless signal. To radiate signals through the plurality of antennas, the RF processing circuit may include a plurality of RF paths. The electronic device may include an up converter that up-converts a baseband digital transmission signal to a transmission frequency, and a digital-to-analog converter (DAC) that converts the up-converted digital transmission signal into an analog RF transmission signal. For example, the electronic device may include a DAC for each RF path. The electronic device may include DACs (230-1, 230-2, ..., 230-N).

[0036] In a wireless communication system, the transmission signal of a base station or terminal undergoes severe attenuation because it is transmitted through a wireless channel. To address this, an electronic device may be configured to include an amplifier for amplifying the transmission signal. To amplify the signal transmitted through the air, a power amplifier may be placed in the RF path. According to embodiments of the present disclosure, the electronic device may include a Doherty power amplifier. For example, a Doherty power amplifier may be placed in each RF path. The electronic device may include a plurality of Doherty power amplifiers (240-1, 240-2, ..., 240-N). An analog RF signal output through a DAC (230-i) may be amplified through a Doherty power amplifier (240-i). The Doherty power amplifier (240-i) may amplify the applied signal and transmit the amplified signal to an antenna (250-i).

[0037] Beamforming technology is utilized as one of the techniques to mitigate propagation path loss and increase the transmission distance of radio waves. Beamforming generally uses multiple antennas to concentrate the reach area of ​​radio waves or to increase the directivity of reception sensitivity in a specific direction. Therefore, to form beamforming coverage instead of forming a signal in an isotropic pattern using a single antenna, an electronic device may be equipped with multiple antennas. According to one embodiment, the electronic device may include a Massive MIMO Unit (MMU). A form in which multiple antennas are aggregated may be referred to as an antenna array, and each antenna included in the array may be referred to as an array element or an antenna element. The antenna array may be configured in various forms, such as a linear array or a planar array. The antenna array may be referred to as a massive antenna array.

[0038] To achieve higher data capacity, the number of RF paths or the power per RF path must be increased. Increasing the number of RF paths leads to a larger product size and creates spatial constraints for installing actual base station equipment. To increase antenna gain through high output without increasing the number of RF paths, dividers (or splitters) can be used to connect multiple antenna elements to a single RF path. As signals are radiated through multiple antenna elements, antenna gain can be increased. The antenna elements corresponding to an RF path can be referred to as a sub-array.

[0039] FIG. 2c illustrates another example of an electronic device including a Doherty power amplifier. For example, the electronic device may be a base station (110). For example, the device may be an RU (220). The electronic device may transmit and / or receive signals using the sub-array described above. Hereinafter, a 3x1 sub-array is described as an example in FIG. 2c.

[0040] Referring to FIG. 2c, the electronic device may include a plurality of antennas. The plurality of antennas may be distributed in sub-array units. A sub-array may include a plurality of antenna elements. For example, a first sub-array of the electronic device may include antenna elements (251-1, 251-2, 251-3). A second sub-array of the electronic device may include antenna elements (252-1, 252-2, 252-3). In this way, the Nth sub-array of the electronic device may include antenna elements (251-N, 252-N, 253-N). The electronic device may include an RF processing circuit to transmit a wireless signal. To radiate signals through the plurality of antennas, the RF processing circuit may include a plurality of RF paths. For example, the electronic device may include a DAC for each RF path. The electronic device may include DACs (230-1, 230-2, ..., 230-N).

[0041] Each RF path may be connected to a sub-array. Sub-array technology refers to a technology for increasing the gain of a signal by dividing the fed signal among multiple antenna elements. The electronic device may include a Doherty power amplifier. For example, a Doherty power amplifier may be placed in each RF path. The electronic device may include multiple Doherty power amplifiers (240-1, 240-2, ..., 240-N). An analog RF signal output through a DAC (230-i) may be amplified through a Doherty power amplifier (240-i). The Doherty power amplifier (240-i) may amplify the applied signal and transmit the amplified signal to the antenna elements (251-i, 252-i, 253-i) of the sub-array of the corresponding RF path.

[0042] In FIGS. 2b and 2c, an RF path in which a Doherty power amplifier is disposed, which is proposed through the embodiments of the present disclosure, is described. Meanwhile, the RF path illustrated in FIGS. 2b and 2c is merely an example to explain the process of transmitting an RF signal to a power amplifier and an antenna. It is not to be interpreted that RF processing circuits having a structure different from that illustrated in FIGS. 2b and 2c are excluded from the embodiments. Furthermore, FIGS. 2b and 2c are merely examples to explain the RF path and are not to be interpreted as limiting the implementation method of the Doherty power amplifier of the present disclosure. For example, a circuit including the Doherty power amplifier may be disposed on a substrate (e.g., PCB) within an electronic device (e.g., base station (110), terminal (120), RU (220)), or implemented as a component (e.g., PAM (power amplifier module), RFIC). For example, an RFIC (e.g., beamforming RFIC, MMIC (monolithic microwave integrated circuit) MMU RFIC, mmWave RFIC) may include multiple RF paths, and each RF path may include a Doherty power amplifier. Exemplary circuits of Doherty power amplifiers according to embodiments are described through the drawings described below.

[0043] Electronic devices supporting wireless communication may consume a large amount of power at the RF transmitter. In particular, the power amplifier of said electronic device may consume a large amount of power. Since communication technologies such as LTE (Long Term Evolution) or 5G NR (New Radio) utilize the OFDM method, a high peak-to-average power ratio (PAPR) may occur. To reduce peak signal loss, the power amplifier may be required to operate in a back-off region equal to the PAPR from the maximum output power. At this time, the efficiency of said power amplifier may decrease. To overcome the reduced efficiency, the electronic device according to the embodiments of the present disclosure may include a Doherty power amplifier. The Doherty power amplifier can provide high efficiency in the back-off region through a load modulation technique.

[0044] An electronic device according to embodiments of the present disclosure (e.g., base station (110), terminal (120), or network entity associated with the base station (110) (e.g., RU (220), repeater)) may include a Doherty power amplifier. The present disclosure describes techniques for improving the efficiency of a Doherty power amplifier (or a two-stage Doherty power amplifier). By optimizing the components within the Doherty power amplifier (or a two-stage Doherty power amplifier), a power amplifier that provides improved performance and is miniaturized may be provided. As the efficiency of the Doherty power amplifier is improved, the power consumption of an electronic device including the Doherty power amplifier may be reduced. Below, the structure of a Doherty power amplifier having high efficiency will be described.

[0045] Figure 3 illustrates an example of a Doherty power amplifier.

[0046] Referring to FIG. 3, the Doherty power amplifier (300) may be an example of the Doherty power amplifier described in FIG. 2b and FIG. 2c. The Doherty power amplifier (300) may be referred to as a two-stage Doherty amplifier.

[0047] According to one embodiment, the Doherty power amplifier (300) may include a drive amplifier circuit (310), a network circuit (340), and a Doherty amplifier circuit (370).

[0048] For example, the Doherty amplifier circuit (370) may include a plurality of power amplifiers as a main amplifier circuit. For example, the Doherty amplifier circuit (370) may include a carrier amplifier and a peaking amplifier. The carrier amplifier may be referred to as the main amplifier, and the peaking amplifier as the auxiliary amplifier.

[0049] For example, within a first output power range (e.g., a low-power range), a carrier amplifier may operate to maintain high efficiency. Within a second output power range (e.g., a high-power range), a carrier amplifier and a peaking amplifier may operate. The power in the first output power range may be lower than the power in the second output power range. For example, the carrier amplifier may be configured to operate in both the first output power range and the second output power range. The peaking amplifier may be configured to operate only in the second output power range among the first output power range and the second output power range. The carrier amplifier may be activated in both the first output power range and the second output power range. The peaking amplifier may be deactivated in the first output power range. The peaking amplifier may be activated in the second output power range.

[0050] For example, the carrier amplifier may be a Class AB (or Class-AB) or Class B (or Class-B) amplifier. The peaking amplifier may be a Class C (or Class-C) amplifier and may generate significant distortion. For example, the peaking amplifier may operate as input power is provided. Linearity may be maintained by adjusting the bias so that the distortion generated by the peaking amplifier cancels out the distortion of the carrier amplifier. The Doherty amplifier circuit (370) may include a structure for connecting the carrier amplifier and the peaking amplifier. For the basic operating principle of the Doherty amplifier circuit (370), a load modulation technique or an active load pull technique based on the output current of the peaking amplifier may be used. For example, the load modulation technique may provide improved efficiency in the back-off region by modulating the load impedance according to the output power.

[0051] For example, the drive amplifier circuit (310) can be used to increase the power gain of the Doherty power amplifier (300). The drive amplifier circuit (310) can be connected to the Doherty amplifier circuit (370) through the network circuit (340).

[0052] For example, the network circuit (340) may include a power distribution circuit (350) and an input matching network circuit (360). For example, the input matching network circuit (360) may include a first input matching network circuit for the carrier amplifier of the Doherty amplifier circuit (370) and a second input matching network circuit for the peaking amplifier. For example, the power distribution circuit (350) may be configured to distribute the amplified power equally to the carrier amplifier and the peaking amplifier.

[0053] For example, in terms of the network circuit (340) being positioned between the drive amplifier circuit (310) and the Doherty amplifier circuit (370), the network circuit (340) may be referred to as an inter-stage network circuit, an inter-network circuit, a connected network circuit, a connected circuit, an inter-stage circuit, and / or an equivalent technical term.

[0054] Figure 4 illustrates an example of a Doherty power amplifier.

[0055] Referring to FIG. 4, the Doherty power amplifier (300) may be an example of the Doherty power amplifier (300) described in FIG. 3. The Doherty power amplifier (300) may include a drive amplifier circuit (310), a network circuit (340), and a Doherty amplifier circuit (370).

[0056] For example, the drive amplifier circuit (310) may include an input matching network (IMN) circuit (311) and a drive amplifier (312). The input matching network circuit (311) may be used for impedance matching of the Doherty power amplifier (300). The drive amplifier (312) may be used to increase power gain.

[0057] For example, the network circuit (340) may include an output matching network (OMN) circuit (341), a power distribution circuit (350), a transmission line (342), a first input matching network circuit (361), and a second input matching network circuit (362). For example, the output matching network circuit (341) may be used for impedance matching. For example, the power distribution circuit (350) may be configured to distribute the amplified power from the drive amplifier circuit (310) to the carrier amplifier (371) and the peaking amplifier (372), respectively. The power distribution circuit (350) may be configured to distribute the amplified power equally to the carrier amplifier (371) and the peaking amplifier (372).

[0058]

[0059]

[0060] For example, the network circuit (340) may include a first input matching network circuit (361) and a second input matching network circuit (362). The first input matching network circuit (361) may be arranged for impedance matching with respect to the carrier amplifier (371). The second input matching network circuit (362) may be arranged for impedance matching with respect to the peaking amplifier (372).

[0061] For example, the Doherty amplifier circuit (370) may include a carrier amplifier (371), a peaking amplifier (372), and a Doherty network circuit (373). For example, the Doherty network circuit (373) may be placed for impedance matching of the Doherty power amplifier (300).

[0062] For example, within a first output power range (e.g., low power range), the carrier amplifier (371) may operate to maintain high efficiency. Within a second output power range (e.g., high power range), the carrier amplifier (371) and the peaking amplifier (372) may operate. The power of the first output power range may be lower than the power of the second output power range. For example, the carrier amplifier (371) may be configured to operate in both the first output power range and the second output power range. The peaking amplifier (372) may be configured to operate only in the second output power range among the first output power range and the second output power range. The carrier amplifier (371) may be activated in both the first output power range and the second output power range. The peaking amplifier (372) may be deactivated in the first output power range. The peaking amplifier (372) may be activated in the second output power range.

[0063] According to one embodiment, since the carrier amplifier (371) of the Doherty amplifier circuit (370) operates as a Class AB amplifier, the input capacitance of the carrier amplifier (371) may have a constant magnitude depending on the input power. The peaking amplifier (372) of the Doherty amplifier circuit (370) may operate as a Class C amplifier. For example, the peaking amplifier (372) may include a MOSFET (metal oxide semiconductor field effect transistor) amplifier. Due to the characteristics of a Class C amplifier (e.g., DC operating point below the cutoff point), the input capacitance of the peaking amplifier (372) may have a characteristic of increasing non-linearly depending on the input power (e.g., power applied to the peaking amplifier). Differences in input capacitance may cause changes in impedance.

[0064] For example, since the carrier amplifier (371) and the peaking amplifier (372) are matched at maximum output power, at low output power where the peaking amplifier (372) is turned off, the circuit for the peaking amplifier (372) may cause mismatch. This mismatch causes a change in the input impedance of the power distribution circuit (350), and this change may change the load impedance of the drive amplifier circuit (310).

[0065] According to one embodiment, the cell (or transistor) sizes of the carrier amplifier (371) and the peaking amplifier (372) may differ from each other. When the cell (or transistor) sizes of the carrier amplifier (371) and the peaking amplifier (372) differ from each other, the Doherty power amplifier (300) may be referred to as an asymmetric Doherty power amplifier. For example, the asymmetric Doherty power amplifier may be classified into a current-coupled asymmetric Doherty power amplifier and a voltage-coupled asymmetric Doherty power amplifier depending on the circuit structure of the Doherty network circuit (373).

[0066] For example, a current-coupled asymmetric Doherty power amplifier may include a current-coupled asymmetric Doherty amplifier circuit. A specific example of a current-coupled asymmetric Doherty amplifier circuit will be described in FIG. 5a. For example, a voltage-coupled asymmetric Doherty power amplifier may include a voltage-coupled asymmetric Doherty amplifier circuit. A specific example of a voltage-coupled asymmetric Doherty amplifier circuit will be described in FIG. 6.

[0067] Figure 5a illustrates an example of a current-coupled asymmetric Doherty amplifier circuit.

[0068] Figure 5b illustrates an example of output voltage according to the input voltage of a carrier amplifier and a peaking amplifier.

[0069] Figure 5c illustrates an example of the performance of a Doherty amplifier including a current-coupled asymmetric Doherty amplifier circuit.

[0070] Referring to FIG. 5a, the Doherty amplifier circuit (500) may be an example of the Doherty amplifier circuit (370) of FIG. 3 and FIG. 4. The Doherty amplifier circuit (500) may be referred to as a current-coupled asymmetric Doherty amplifier circuit. For example, the Doherty amplifier circuit (500) may include a carrier amplifier (371), a peaking amplifier (372), and a transmission line (501). For example, the Doherty amplifier circuit (500) may be included in a massive MIMO unit (MMU). For example, the Doherty amplifier circuit (500) may be included in an MMU for transmitting and receiving radio signals at frequency range 1 (FR 1) of NR. For example, the Doherty amplifier circuit (500) may be included within a communication device configured for massive MIMO, but is not limited thereto. For example, the Doherty amplifier circuit (500) may be included in a radio unit (RU). For example, the Doherty amplifier circuit (500) may be included in a radio unit for transmitting and receiving a radio signal in the millimeter wave (mmWave) band. For example, the Doherty amplifier circuit (500) may be used to amplify a radio signal in the millimeter wave (mmWave) band.

[0071] For example, the cell size of the carrier amplifier (371) may be smaller than the cell size of the peaking amplifier (372). For example, if the same input power is provided to the carrier amplifier (371) and the peaking amplifier (372), the output power (or output current) of the peaking amplifier (372) may be greater than the output power (or output current) of the carrier amplifier (371).

[0072] For example, the ratio of the cell size of the peaking amplifier (372) to the cell size of the carrier amplifier (371) can be set to α (alpha). For example, the cell size of the carrier amplifier (371) and the cell size of the peaking amplifier (372) can be set as shown in the following mathematical formula.

[0073]

[0074]

[0075]

[0076]

[0077]

[0078] Referring to FIG. 5b, graph (525) represents the output voltage according to the input voltage of the carrier amplifier (371). Graph (526) represents the output voltage according to the input voltage of the peaking amplifier (372). The horizontal axis of graph (525) and graph (526) represents the input voltage (unit: [V]). The vertical axis of graph (525) and graph (526) represents the output voltage (unit: [V]).

[0079]

[0080] Referring to FIG. 5c, graph (531) shows the output power versus efficiency of a Doherty power amplifier including a Doherty amplifier circuit (500). The horizontal axis of graph (531) represents the output power (unit: W (watt)), and the vertical axis of graph (531) represents the efficiency (unit: percent (%)) of the Doherty power amplifier.

[0081]

[0082]

[0083]

[0084]

[0085]

[0086]

[0087]

[0088]

[0089]

[0090] For example, P1 can be expressed as shown in the following mathematical formula.

[0091]

[0092]

[0093]

[0094]

[0095]

[0096]

[0097] Therefore, the back-off size can be expressed as shown in the following mathematical formula.

[0098]

[0099] Referring to mathematical formula 9, OBO represents the back-off size (unit: [dB]). Thus, the back-off size of the Doherty power amplifier including the Doherty amplifier circuit (500) can be changed according to the ratio of the cell size of the carrier amplifier (371) to the cell size of the peaking amplifier (372).

[0100] According to one embodiment, an asymmetric Doherty power amplifier can be configured according to a voltage coupling method. Compared to an asymmetric Doherty power amplifier of a current coupling method, an asymmetric Doherty power amplifier of a voltage coupling method may have wider band characteristics. In the specification below, specific examples of Doherty amplifier circuits included in an asymmetric Doherty power amplifier of a voltage coupling method will be described.

[0101] Figure 6 illustrates an example of a voltage-coupled asymmetric Doherty amplifier circuit.

[0102] Referring to FIG. 6, the Doherty amplifier circuit (600) may be an example of the Doherty amplifier circuit (370) of FIG. 3 and FIG. 4. The Doherty amplifier circuit (600) may be referred to as a voltage-coupled asymmetric Doherty amplifier circuit. For example, the Doherty amplifier circuit (600) may include a carrier amplifier (371), a peaking amplifier (372), a first transmission line (601), a second transmission line (602), a third transmission line (603), and a transformer (604).

[0103] For example, the cell size of the carrier amplifier (371) may be smaller than the cell size of the peaking amplifier (372). For example, if the same input power is provided to the carrier amplifier (371) and the peaking amplifier (372), the output power (or output current) of the peaking amplifier (372) may be greater than the output power (or output current) of the carrier amplifier (371).

[0104] For example, the carrier amplifier (371) can provide a first power. The peaking amplifier (372) can provide a second power higher than the first power. For example, the ratio of the cell size of the peaking amplifier (372) to the cell size of the carrier amplifier (371) can be set to α (alpha). For example, the cell size of the carrier amplifier (371) and the cell size of the peaking amplifier (372) can be set as in Equation 1 described above.

[0105] For example, the transformer (604) may include a primary winding (610) and a secondary winding (620). The turns ratio of the transformer (604) may be 1:m. The first terminal (611) of the primary winding (610) may be connected to a carrier amplifier (371). The second terminal (612) of the primary winding (610) may be connected to a peaking amplifier (372). The first terminal (621) of the secondary winding (620) may be connected to a load impedance (650) of a Doherty amplifier circuit (600). The load impedance (650) of the Doherty amplifier circuit (600) It may be possible. The second terminal (622) of the secondary winding (620) may be connected to ground. According to an embodiment, the transformer (604) may be implemented by vertically coupling metals of different layers or horizontally coupling metals of the same layer in a printed circuit board (PCB) of a stacked structure.

[0106] For example, the carrier amplifier (371) can be connected to the transformer (604). The carrier amplifier (371) can be connected to the first terminal (611) of the primary winding (610) of the transformer (604) through the first transmission line (601).

[0107] For example, the picking amplifier (372) can be connected to the transformer (604). The picking amplifier (372) can be connected to the second terminal (612) of the primary winding (610) of the transformer (604) through the second transmission line (602) and the third transmission line (603). The second transmission line (602) and the third transmission line (603) can be connected in series between the picking amplifier (372) and the second terminal (612) of the primary winding (610) of the transformer (604).

[0108]

[0109]

[0110]

[0111] According to one embodiment, the carrier amplifier (371) and the peaking amplifier (372) may be in a matched state at maximum output power. However, at back-off output power, the peaking amplifier (372) may be turned off. As the peaking amplifier (372) is turned off, the load impedance of the carrier amplifier (371) may change. The change in the load impedance of the carrier amplifier (371) according to output power will be described later in FIGS. 7a and 7b.

[0112] Figure 7a illustrates an example of an equivalent circuit of a Doherty amplifier circuit at maximum output power.

[0113] Figure 7b illustrates an example of the equivalent circuit of a Doherty amplifier circuit at back-off output power.

[0114] Referring to FIG. 7a, the circuit (710) may be an equivalent circuit of the Doherty amplifier circuit (370) of FIG. 6 while maximum output power is provided. According to the circuit (710), the carrier amplifier (371) can be converted into a current source (701). The peaking amplifier (372) can be converted into a current source (702). The current provided from the current source (701) is I C It can be. The current provided from the current source (702) is I P It may be. For example, since the cell size of the peaking amplifier (372) is α times the cell size of the carrier amplifier (371), I C The size and I P The relationship between the sizes can be set as shown in the following mathematical formula.

[0115]

[0116]

[0117]

[0118]

[0119]

[0120] Referring to FIG. 7b, the circuit (720) may be an equivalent circuit of the Doherty amplifier circuit (370) of FIG. 6 while back-off output power is provided. According to the circuit (720), the carrier amplifier (371) can be converted into a current source (701). The peaking amplifier (372) can be converted into a current source (702). The current provided from the current source (701) is I C It may be. While back-off output power is provided, the peaking amplifier (372) is deactivated, so the current source (702) may be open. The current provided from the current source (702) may be '0'.

[0121]

[0122]

[0123]

[0124]

[0125]

[0126]

[0127]

[0128]

[0129]

[0130] Accordingly, the back-off size of the Doherty power amplifier including the Doherty amplifier circuit (600) of FIG. 6 can be expressed as follows:

[0131]

[0132]

[0133]

[0134] Figures 8a to 8c show examples of the fractional bandwidth (FBW) of a Doherty power amplifier.

[0135]

[0136] Referring to graphs (801) and (802), impedance matching of the carrier amplifier (371) can be performed within the contour (800). The load impedance of the carrier amplifier (371) can be changed according to frequency. Fractional bandwidth (FBW) can be used to compare the band characteristics of the band where impedance matching is performed. FBW can be calculated as shown in the following mathematical formula.

[0137]

[0138] According to graph (801), in a Doherty amplifier circuit (500) which is a current-coupled asymmetric Doherty amplifier circuit, impedance matching of the carrier amplifier (371) can be performed from 0.89f0 to 1.11f0. The FBW can be 22.1%. According to graph (802), in a Doherty amplifier circuit (600) which is a voltage-coupled asymmetric Doherty amplifier circuit, impedance matching of the carrier amplifier (371) can be performed from 0.575f0 to 1.425f0. The FBW can be 93.9%. When the Doherty amplifier circuit (600) is used, a wider FBW can be provided than when the Doherty amplifier circuit (500) is used.

[0139]

[0140] For example, referring to graphs (811) and (812), impedance matching of the carrier amplifier (371) can be performed within the contour (810). The load impedance of the carrier amplifier (371) can be changed according to frequency.

[0141] According to graph (811), in a Doherty amplifier circuit (500) which is a current-coupled asymmetric Doherty amplifier circuit, impedance matching of the carrier amplifier (371) can be performed from 0.88f0 to 1.12f0. The FBW can be 24.2%. According to graph (812), in a Doherty amplifier circuit (600) which is a voltage-coupled asymmetric Doherty amplifier circuit, impedance matching of the carrier amplifier (371) can be performed from 0.825f0 to 1.175f0. The FBW can be 35.5%. When the Doherty amplifier circuit (600) is used, a wider FBW can be provided than when the Doherty amplifier circuit (500) is used.

[0142]

[0143] For example, with reference to graphs (821) and (822), impedance matching of the peaking amplifier (372) can be performed within the contour (820). The load impedance of the peaking amplifier (372) can be changed according to frequency.

[0144] According to graph (821), in a Doherty amplifier circuit (500) which is a current-coupled asymmetric Doherty amplifier circuit, impedance matching of the peaking amplifier (372) can be performed from 0.7f0 to 1.3f0. The FBW can be 62.9%. According to graph (822), in a Doherty amplifier circuit (600) which is a voltage-coupled asymmetric Doherty amplifier circuit, impedance matching of the peaking amplifier (372) can be performed from 0.74f0 to 1.26f0. The FBW can be 53.8%. When the Doherty amplifier circuit (600) is used, a wider FBW can be provided than when the Doherty amplifier circuit (500) is used.

[0145] According to FIGS. 8a through 8c, the final bandwidth of the Doherty power amplifier can be set to an overlapping range of the aforementioned bands. For example, in a Doherty amplifier circuit (500) which is a current-coupled asymmetric Doherty amplifier circuit, impedance matching of the Doherty amplifier circuit (500) (or a Doherty amplifier including the Doherty amplifier circuit (500)) can be performed from 0.89f0 to 1.11f0. The FBW can be 22.1%. In a Doherty amplifier circuit (600) which is a voltage-coupled asymmetric Doherty amplifier circuit, impedance matching of the Doherty amplifier circuit (600) (or a Doherty amplifier including the Doherty amplifier circuit (600)) can be performed from 0.825f0 to 1.175f0. The FBW can be 35.5%. Therefore, when the Doherty amplifier circuit (600) is used, a wider FBW can be provided than when the Doherty amplifier circuit (500) is used.

[0146]

[0147]

[0148]

[0149]

[0150]

[0151] FIG. 10 illustrates examples of components of an electronic device. For example, the electronic device (1010) may be one of a base station (110) (or RU (220)) and a terminal (120), and the electronic device (1020) may be the other of a base station (110) (or RU (220)) and a terminal (120). The electronic device (1010) may be an antenna device of an RFIC comprising one or more RF chains. In addition to the power amplifier (e.g., a two-stage Doherty power amplifier (300)) itself mentioned through FIG. 3 through 9, the electronic device comprising said power amplifier is also included in the embodiments of the present disclosure.

[0152] Referring to FIG. 10, an exemplary functional configuration of an electronic device (1010) is illustrated. The electronic device (1010) may include an antenna section (1011), a filter section (1012), an RF (radio frequency) processing section (1013), and a control section (1014).

[0153] The antenna section (1011) may include a plurality of antennas. The antennas perform functions for transmitting and receiving signals through a wireless channel. The antennas may include a radiator made of a conductor or a conductive pattern formed on a substrate (e.g., a PCB). The antennas may radiate an upconverted signal over a wireless channel or acquire a signal radiated by another device. Each antenna may be referred to as an antenna element or an antenna component. According to one embodiment, the antenna section (1011) may include an antenna array in which a plurality of antenna elements form an array. The antenna section (1011) may be electrically connected to the filter section (1012) via RF signal lines. The antenna section (1011) may be mounted on a PCB containing a plurality of antenna elements. The PCB may include a plurality of RF signal lines connecting each antenna element to the filter of the filter section (1012). These RF signal lines may be referred to as a feeding network. The antenna unit (1011) can provide the received signal to the filter unit (1012) or radiate the signal provided from the filter unit (1012) into the air.

[0154] The filter unit (1012) can perform filtering to transmit a signal of a desired frequency. The filter unit (1012) can perform a function to selectively identify a frequency by forming resonance. The filter unit (1012) may include at least one of a band-pass filter, a low-pass filter, a high-pass filter, or a band-reject filter. That is, the filter unit (1012) may include RF circuits for obtaining a signal in a frequency band for transmission or a frequency band for reception. According to various embodiments, the filter unit (1012) may electrically connect the antenna unit (1011) and the RF processing unit (1013).

[0155] The RF processing unit (1013) may include a plurality of RF paths. An RF path may be a unit of a path through which a signal received through an antenna or a signal radiated through an antenna passes. At least one RF path may be referred to as an RF chain. An RF chain may include a plurality of RF elements. RF elements may include amplifiers, mixers, oscillators, digital-to-analog converters (DACs), analog-to-digital converters (ADCs), etc. For example, the RF processing unit (1013) may include an up converter that up-converts a baseband digital transmission signal to a transmission frequency, and a DAC that converts the up-converted digital transmission signal into an analog RF transmission signal. The up converter and the DAC form part of a transmission path. The transmission path may further include a power amplifier (PA) or a coupler (or combiner). Additionally, for example, the RF processing unit (1013) may include an ADC that converts an analog RF reception signal into a digital reception signal and a down converter that converts the digital reception signal into a baseband digital reception signal. The ADC and the down converter form part of the reception path. The reception path may further include a low-noise amplifier (LNA) or a coupler (or divider). The RF components of the RF processing unit may be implemented on a PCB. For example, the base station (1010) may include a stacked structure in the order of an antenna unit (1011) - a filter unit (1012) - an RF processing unit (1013). For example, the antennas and the RF components of the RF processing unit may be implemented on a PCB. For example, filters may be repeatedly connected between PCBs to form multiple layers.

[0156] The RF processing unit (1013) may include a plurality of RF processing chains for a plurality of signal paths transmitted to the antenna unit (111) and the filter unit (1012). For example, the RF processing unit (1013) may be an RFIC. The RFIC may include a plurality of RF processing chains. A signal applied in the baseband may be input to the RFIC. The signal input to the RFIC may be distributed to each antenna element. At this time, for beamforming, an independent phase shift may be applied to each of the antenna elements. Accordingly, the RFIC may include RF processing chains for processing the signal to be transmitted to each antenna element. Each RF processing chain may include one or more RF components for RF signal processing. The RF processing unit (1013) may include the above-described drive amplifier circuit (e.g., drive amplifier circuit (310)), network circuit (e.g., network circuit (340)), and Doherty amplifier circuit (e.g., Doherty amplifier circuit (370)).

[0157] The control unit (1014) can control the overall operations of the electronic device (1010). The control unit (1014) may include various modules for performing communication. The control unit (1014) may include at least one processor, such as a modem. The control unit (1014) may include modules for digital signal processing. For example, the control unit (1014) may include a modem. When transmitting data, the control unit (1014) generates complex symbols by encoding and modulating the transmitted bit sequence. Also, for example, when receiving data, the control unit (1014) restores the received bit sequence by demodulating and decoding the baseband signal. The control unit (1014) can perform the functions of a protocol stack required by the communication standard.

[0158] In FIG. 10, the functional configuration of an electronic device (1010) is described as equipment in which the Doherty power amplifier of the present disclosure can be utilized. However, the example shown in FIG. 10 is merely an exemplary configuration for utilizing the Doherty power amplifier described through FIG. 1 to 9, and the embodiments of the present disclosure are not limited to the components shown in FIG. 10. An RF module, MMIC, PAM, RFIC, communication equipment of other configurations, or a structure for the Doherty power amplifier including the Doherty power amplifier having the resistor selection circuit described above may also be understood as an embodiment of the present disclosure.

[0159] According to one embodiment, a Doherty power amplifier may include a carrier amplifier providing a first power, a peaking amplifier providing a second power higher than the first power, a transformer including a primary winding and a secondary winding, a first transmission line disposed between a first terminal of the primary winding and the carrier amplifier to provide a first characteristic impedance, a second transmission line disposed between a second terminal of the primary winding and the peaking amplifier to provide a second characteristic impedance, and a third transmission line disposed between the second terminal of the primary winding and the peaking amplifier to provide a compensation characteristic impedance. The magnitude of the compensation characteristic impedance may correspond to the magnitude of the first characteristic impedance. The secondary winding may be connected to the load impedance of the Doherty power amplifier.

[0160] For example, the second transmission line and the third transmission line may be connected in series between the second terminal of the primary winding and the peaking amplifier.

[0161] For example, the ratio of the magnitude of the first characteristic impedance to the magnitude of the second characteristic impedance may correspond to the ratio of the cell size of the peaking amplifier to the cell size of the carrier amplifier.

[0162] For example, the back-off power of the Doherty power amplifier can be changed based on the phase difference of the first characteristic impedance and the phase difference of the second characteristic impedance.

[0163] For example, the carrier amplifier may be configured to operate in a first output power range and a second output power range. The peaking amplifier may be configured to operate in the second output power range.

[0164]

[0165]

[0166]

[0167]

[0168] For example, the first terminal of the secondary winding may be connected to the load impedance. The second terminal of the secondary winding may be connected to ground.

[0169] According to one embodiment, an electronic device including a Doherty power amplifier may include a plurality of antennas, a plurality of filters for the plurality of antennas, a plurality of RF processing circuits for the plurality of antennas, and a processor. Each of the plurality of RF processing circuits may include a Doherty power amplifier. The Doherty power amplifier may include a carrier amplifier providing a first power, a peaking amplifier providing a second power higher than the first power, a transformer including a primary winding and a secondary winding, a first transmission line disposed between a first terminal of the primary winding and the carrier amplifier and for providing a first characteristic impedance, a second transmission line disposed between a second terminal of the primary winding and the peaking amplifier and for providing a second characteristic impedance, and a third transmission line disposed between the second terminal of the primary winding and the peaking amplifier and for providing a compensation characteristic impedance. The magnitude of the above compensation characteristic impedance may correspond to the magnitude of the above first characteristic impedance. The above second winding may be connected to the load impedance of the above Doherty power amplifier.

[0170] For example, the second transmission line and the third transmission line may be connected in series between the second terminal of the primary winding and the peaking amplifier.

[0171] For example, the ratio of the magnitude of the first characteristic impedance to the magnitude of the second characteristic impedance may correspond to the ratio of the cell size of the peaking amplifier to the cell size of the carrier amplifier.

[0172] For example, the back-off power of the Doherty power amplifier can be changed based on the phase difference of the first characteristic impedance and the phase difference of the second characteristic impedance.

[0173] For example, the carrier amplifier may be configured to operate in a first output power range and a second output power range. The peaking amplifier may be configured to operate in the second output power range.

[0174]

[0175]

[0176]

[0177]

[0178] For example, the first terminal of the secondary winding may be connected to the load impedance. The second terminal of the secondary winding may be connected to ground.

[0179] According to the embodiments described above, an asymmetric Doherty power amplifier with a voltage coupling method can be proposed. In the asymmetric Doherty power amplifier with a voltage coupling method, the back-off region (or back-off size) can be expanded (or changed) through the phase difference of the offset lines. Accordingly, the efficiency of the Doherty power amplifier included in a mobile communication base station (or repeater) can be improved, and power consumption can be reduced.

[0180] Methods according to the embodiments described in the claims or specification of the present disclosure may be implemented in the form of hardware, software, or a combination of hardware and software.

[0181] When implemented in software, a computer-readable storage medium may be provided for storing one or more programs (software modules). One or more programs stored in the computer-readable storage medium are configured for execution by one or more processors within an electronic device. One or more programs include instructions that cause the electronic device to execute methods according to the embodiments described in the claims or specification of this disclosure. The one or more programs may be provided as a computer program product. The computer program product may be traded between a seller and a buyer as a product. The computer program product may be distributed in the form of a device-readable storage medium (e.g., compact disc read-only memory (CD-ROM)), or distributed online (e.g., download or upload) through an application store (e.g., Play Store™) or directly between two user devices (e.g., smartphones). In the case of online distribution, at least a portion of the computer program product may be temporarily stored or temporarily created on a device-readable storage medium, such as the memory of a manufacturer's server, an application store's server, or a relay server.

[0182] Such programs (software modules, software) may be stored in random access memory, non-volatile memory including flash memory, read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), magnetic disc storage devices, compact disc-ROM (CD-ROM), digital versatile discs (DVDs), or other forms of optical storage devices, magnetic cassettes. Alternatively, they may be stored in memory composed of some or all of these. Additionally, each constituent memory may include multiple units.

[0183] Additionally, the program may be stored on an attachable storage device that can be accessed via a communication network such as the Internet, Intranet, LAN (local area network), WAN (wide area network), or SAN (storage area network), or a combination thereof. Such a storage device may be connected to a device performing an embodiment of the present disclosure through an external port. Additionally, a separate storage device on a communication network may be connected to a device performing an embodiment of the present disclosure.

[0184] In the specific embodiments of the present disclosure described above, the components included in the disclosure are expressed in a singular or plural form according to the specific embodiments presented. However, the singular or plural expression is selected to suit the situation presented for convenience of explanation, and the present disclosure is not limited to singular or plural components; even if a component is expressed in the plural form, it may be composed of a singular form, and even if a component is expressed in the singular form, it may be composed of a plural form.

[0185] According to embodiments, one or more of the aforementioned components or operations may be omitted, or one or more other components or operations may be added. Generally or additionally, a plurality of components (e.g., modules or programs) may be integrated into a single component. In this case, the integrated component may perform one or more functions of each of the plurality of components in the same or similar manner as those performed by the corresponding component among the plurality of components prior to integration. According to embodiments, operations performed by a module, program, or other component may be executed sequentially, in parallel, iteratively, or heuristically, or one or more of the operations may be executed in a different order, omitted, or one or more other operations may be added.

[0186] Meanwhile, although specific embodiments have been described in the detailed description of the present disclosure, it is understood that various modifications are possible within the scope of the present disclosure.

Claims

1. In a Doherty power amplifier, A carrier amplifier providing first power; A peaking amplifier that provides a second power higher than the first power; A transformer including a primary winding and a secondary winding; A first transmission line disposed between the first terminal of the primary winding and the carrier amplifier, for providing a first characteristic impedance; A second transmission line disposed between the second terminal of the primary winding and the peaking amplifier and for providing a second characteristic impedance; and It includes a third transmission line disposed between the second terminal of the primary winding and the peaking amplifier to provide a compensation characteristic impedance, The magnitude of the above compensation characteristic impedance is, Corresponding to the magnitude of the first characteristic impedance above, and The above second winding is, Connected to the load impedance of the above Doherty power amplifier, Doherty Power Amplifier 2. In claim 1, the second transmission line and the third transmission line are, Connected in series between the second terminal of the primary winding and the peaking amplifier Doherty Power Amplifier 3. In claim 1, the ratio of the magnitude of the first characteristic impedance to the magnitude of the second characteristic impedance is, Corresponding to the ratio of the cell size of the peaking amplifier to the cell size of the carrier amplifier, Doherty Power Amplifier 4. In claim 3, the back-off power of the Doherty power amplifier is, Based on the phase difference of the first characteristic impedance and the phase difference of the second characteristic impedance, changing, Doherty Power Amplifier 5. In claim 4, the carrier amplifier is, It is configured to operate in a first output power interval and a second output power interval, and The above peaking amplifier is, Configured to operate in the above second output power range, Doherty Power Amplifier 6. In claim 5, the load impedance is, 7. In claim 6, the first characteristic impedance is, 8. In claim 7, the output impedance of the carrier amplifier in the first output power range is, 9. In claim 8, the back-off power of the Doherty power amplifier is, 10. In claim 1, the first terminal of the secondary winding is Connected to the above load impedance, The second terminal of the above secondary winding is, Connected to the ground, Doherty Power Amplifier 11. An electronic device including a Doherty power amplifier, Multiple antennas; A plurality of filters for the above plurality of antennas; A plurality of RF processing circuits for the plurality of antennas above; and Includes a processor, Each of the plurality of RF processing circuits above includes a Doherty power amplifier, and The above Doherty power amplifier is, A carrier amplifier providing first power; A peaking amplifier that provides a second power higher than the first power; A transformer including a primary winding and a secondary winding; A first transmission line disposed between the first terminal of the primary winding and the carrier amplifier, for providing a first characteristic impedance; A second transmission line disposed between the second terminal of the primary winding and the peaking amplifier and for providing a second characteristic impedance; and It includes a third transmission line disposed between the second terminal of the primary winding and the peaking amplifier to provide a compensation characteristic impedance, The magnitude of the above compensation characteristic impedance is, Corresponding to the magnitude of the first characteristic impedance above, and The above second winding is, Connected to the load impedance of the above Doherty power amplifier, Electronic device.

12. In claim 11, the second transmission line and the third transmission line are, Connected in series between the second terminal of the primary winding and the peaking amplifier Electronic device.

13. In claim 11, the ratio of the magnitude of the first characteristic impedance to the magnitude of the second characteristic impedance is, Corresponding to the ratio of the cell size of the peaking amplifier to the cell size of the carrier amplifier, Electronic device.

14. In claim 13, the back-off power of the Doherty power amplifier is, Based on the phase difference of the first characteristic impedance and the phase difference of the second characteristic impedance, changing, Electronic device.

15. In claim 14, the carrier amplifier is, It is configured to operate in a first output power interval and a second output power interval, and The above peaking amplifier is, Configured to operate in the above second output power range, Electronic device.

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