Display device, display module, electronic apparatus

Abstract

Provided is a novel display device that demonstrates superior convenience, utility, or reliability. This display device has a display region, a first layer, and a second layer. The display region is provided with a first pixel and a second pixel, and the first pixel is provided with a first light-emitting device and a first pixel circuit. The first light-emitting device is connected to the first pixel circuit. The second pixel is adjacent to the first pixel. The second pixel is provided with a second light-emitting device and a second pixel circuit. The second light-emitting device is connected to the second pixel circuit. The first layer is provided with the first light-emitting device and the second light-emitting device. The second light-emitting device has a first center-to-center distance to the first light-emitting device. The second layer is provided with the first pixel circuit and the second pixel circuit. The second pixel circuit has a second center-to-center distance to the first pixel circuit.

Description

Display device, display module, electronic device

[0001] One aspect of the present invention relates to a display device, a display module, an electronic device, or a semiconductor device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification, etc. relates to an object, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include an information processing device, a semiconductor device, a storage device, a driving method thereof, or a manufacturing method thereof.

[0003] Patent Document 1 discloses a display device having a display portion with extremely high fineness. This display device has a pixel circuit and a light-emitting element. The pixel circuit has a first element layer having a first transistor and a second element layer having a second transistor. The first transistor has silicon in the channel formation region. The first transistor has a function of driving the light-emitting element. The second transistor has a function of a switch. The second transistor has a metal oxide in the channel formation region. The metal oxide has a semiconductor function. The second element layer is provided above the first element layer. Also, in the disclosed configuration, the area occupied by the light-emitting device is approximately equal to the area occupied by the pixel circuit.

[0004] Japanese Unexamined Patent Application Publication No. 2024-37933

[0005] One aspect of the present invention aims to provide a novel display device that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel display module that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel electronic device that is superior in convenience, usefulness, or reliability. Alternatively, it aims to provide a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device. Alternatively, it aims to make the area occupied by the light-emitting device in a single pixel smaller than the area occupied by the pixel circuit. Alternatively, it aims to make the resolution of the central part of the display area higher than the resolution of the peripheral part of the display area.

[0006] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims.

[0007] (1) One aspect of the present invention is a display device having a first pixel and a second pixel.

[0008] The first pixel comprises a first light-emitting device and a first pixel circuit, the first light-emitting device being connected to the first pixel circuit.

[0009] The second pixel is adjacent to the first pixel. The second pixel comprises a second light-emitting device and a second pixel circuit, the second light-emitting device being connected to the second pixel circuit.

[0010] The second light-emitting device has a first center-to-center distance from the first light-emitting device.

[0011] The second pixel circuit has a second center-to-center distance from the first pixel circuit. The second center-to-center distance is greater than the first center-to-center distance.

[0012] This makes it possible to reduce the area occupied by the first light-emitting device in the first pixel to the area occupied by the first pixel circuit. As a result, a novel display device with superior convenience, usefulness, or reliability can be provided.

[0013] (2) Another aspect of the present invention is the above-described display device having a display area, a first layer, and a second layer. The display area comprises a first pixel, a second pixel, a third pixel, and a fourth pixel.

[0014] The third pixel is positioned closer to the periphery of the display area compared to the first pixel. The third pixel comprises a third light-emitting device and a third pixel circuit, the third light-emitting device being connected to the third pixel circuit.

[0015] The fourth pixel is adjacent to the third pixel. The fourth pixel comprises a fourth light-emitting device and a fourth pixel circuit, the fourth light-emitting device being connected to the fourth pixel circuit.

[0016] The first layer comprises a first light-emitting device, a second light-emitting device, a third light-emitting device, and a fourth light-emitting device, wherein the fourth light-emitting device has a third center-to-center distance from the third light-emitting device.

[0017] The second layer comprises a first pixel circuit, a second pixel circuit, a third pixel circuit, and a fourth pixel circuit, wherein the fourth pixel circuit has a fourth center-to-center distance from the third pixel circuit. The fourth center-to-center distance is smaller than the third center-to-center distance.

[0018] (3) Another aspect of the present invention is the above-mentioned display device, wherein the third center-to-center distance is greater than the first center-to-center distance.

[0019] This allows the resolution at the periphery of the display area to be lower than that at the center of the display area. Conversely, the resolution at the center of the display area can be higher than that at the periphery. Furthermore, for example, the resolution of the part that the user of the display device focuses on can be made higher than that of the peripheral field of view. Also, since users often focus on the center of the display area, fixed foveal rendering can be applied. In addition, the display capabilities of the display device can be appropriately distributed to the display area. As a result, a novel display device with superior convenience, usefulness, or reliability can be provided.

[0020] (4) Another aspect of the present invention is the above-described display device, wherein the fourth center-to-center distance is equal to the second center-to-center distance.

[0021] This allows, for example, the resolution of the peripheral part of the display area to be lower than that of the central part of the display area, while applying the same pixel circuit configuration to the first and third pixel circuits. Alternatively, for example, the resolution of the central part of the display area to be higher than that of the peripheral part of the display area, while applying the same pixel circuit configuration to the first and third pixel circuits. Furthermore, for example, the resolution of the part of the display device that the user focuses on can be made higher than that of the peripheral field of view, while applying the same pixel circuit configuration to the first and third pixel circuits. Also, since users often focus on the central part of the display area, fixed foveal rendering can be applied. Additionally, for example, the display capability of the display device can be appropriately distributed across the display area while applying the same pixel circuit configuration to the first and third pixel circuits. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0022] (5) Another aspect of the present invention is the above-described display device, wherein the first layer includes an area that overlaps with the second layer.

[0023] This reduces the footprint of the display device. It also reduces the footprint of each pixel. As a result, it is possible to provide a novel display device with superior convenience, usefulness, and reliability.

[0024] (6) Another aspect of the present invention is the above-described display device having a first wiring layer and a second wiring layer.

[0025] The first wiring layer is sandwiched between the first layer and the second wiring layer, and the first wiring layer includes the first wiring. The first wiring connects the first light-emitting device and the first pixel circuit.

[0026] The second wiring layer is sandwiched between the first wiring layer and the second layer, and the second wiring layer includes the second wiring. The second wiring connects the second light-emitting device and the second pixel circuit.

[0027] This reduces congestion in the wiring layer compared to the case where the first and second wiring are placed on the same wiring layer. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0028] (7) Another aspect of the present invention is the above-described display device, which comprises a first set of pixels, a second set of pixels, a third wiring layer, and a fourth wiring layer.

[0029] The first pair of pixels comprises a fifth pixel and a sixth pixel. The fifth pixel comprises a first light-emitting device, and the sixth pixel comprises a fifth light-emitting device. The fifth light-emitting device emits a different color from the first light-emitting device.

[0030] The second pair of pixels comprises a seventh pixel and an eighth pixel. The seventh pixel comprises a third light-emitting device, and the eighth pixel comprises a sixth light-emitting device. The third light-emitting device has the same light-emitting color as the first light-emitting device, and the sixth light-emitting device has the same light-emitting color as the fifth light-emitting device.

[0031] The third wiring layer includes the first wiring and the third wiring. The first wiring is connected to the first light-emitting device, and the third wiring is connected to the third light-emitting device.

[0032] The fourth wiring layer overlaps with the third wiring layer. The fourth wiring layer includes the fourth wiring and the fifth wiring, the fourth wiring being connected to the fifth light-emitting device, and the fifth wiring being connected to the sixth light-emitting device.

[0033] This reduces congestion in the wiring layer compared to the case where the first and fourth wirings are placed on the same wiring layer. It also reduces congestion in the wiring layer compared to the case where the third and fifth wirings are placed on the same wiring layer. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0034] (8) Another aspect of the present invention is the above-described display device, wherein the first layer comprises a third layer and a fourth layer.

[0035] The third layer comprises a first light-emitting device and a third light-emitting device. The third layer is separated from the fourth layer by a third wiring layer.

[0036] The fourth layer comprises a fifth light-emitting device and a sixth light-emitting device. The fourth layer is sandwiched between the third wiring layer and the fourth wiring layer, and the fourth layer has the fourth wiring layer sandwiched between it and the second layer.

[0037] This allows the third light-emitting device to be formed in a separate process from the process of forming the first light-emitting device. Furthermore, the process of forming a light-emitting device with the same emission color as the first light-emitting device can be separated from the process of forming a light-emitting device with the same emission color as the third light-emitting device. Additionally, a light-reflecting lower electrode can be used for the first light-emitting device and its lower electrode. Furthermore, a lower electrode with low light transmittance can be used for the first light-emitting device and its lower electrode. The microcavity structure of the first light-emitting device can be optimized. Light extraction efficiency can be increased. Color reproducibility can be improved. The aperture ratio can be increased. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0038] (9) Another aspect of the present invention is the above-described display device, wherein the first layer comprises a third layer and a fourth layer.

[0039] The fourth layer is sandwiched between the third layer and the second layer, and the fourth layer sandwiches a fourth wiring layer between it and the second layer. Note that the fourth layer includes a fifth light-emitting device.

[0040] The third layer sandwiches a third wiring layer between it and the fourth layer. Note that the third layer includes a first light-emitting device.The first light-emitting device overlaps with the fifth light-emitting device.

[0041] The first light-emitting device includes a first electrode, a light-emitting unit, and a second electrode. The light-emitting unit is sandwiched between the first electrode and the second electrode, and both the first electrode and the second electrode have translucency.

[0042] Thus, compared with the case where the first light-emitting device and the fifth light-emitting device are arranged side by side, the areas of the first light-emitting device and the fifth light-emitting device can be increased. Also, compared with the case where the first light-emitting device and the fifth light-emitting device are arranged side by side, a display with the same brightness can be achieved at a lower current density. In addition, the reliability of the display device can be improved. As a result, a novel display device excellent in convenience, usability, or reliability can be provided.

[0043] (10) Also, one aspect of the present invention is the above-described display device having a dielectric multilayer film.

[0044] The dielectric multilayer film is sandwiched between the first light-emitting device and the fifth light-emitting device. The dielectric multilayer film reflects the light emitted by the first light-emitting device and transmits the light emitted by the fifth light-emitting device.

[0045] The fifth light-emitting device includes a material that absorbs the light emitted by the first light-emitting device and emits light.

[0046] Thus, the occurrence of a phenomenon in which the fifth light-emitting device emits light with an unintended luminance can be suppressed. Also, vivid colors can be displayed using the fifth light-emitting device. In addition, the color reproducibility of the display device can be improved. As a result, a novel display device excellent in convenience, usability, or reliability can be provided.

[0047] (11) Also, one aspect of the present invention is a display module having at least one of the above-described display device and at least one of a connector and an integrated circuit.

[0048] (12) Also, one aspect of the present invention is an electronic device having at least one of the above-described display device and at least one of a battery, a camera, a speaker, and a microphone.

[0049] One aspect of the present invention can provide a novel display device excellent in convenience, usefulness, or reliability. Or, a novel display module excellent in convenience, usefulness, or reliability can be provided. Or, a novel electronic device excellent in convenience, usefulness, or reliability can be provided. Or, a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device can be provided.

[0050] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects will be apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc.

[0051] Figure 1 is a diagram illustrating the configuration of a display device according to an embodiment. Figures 2A and 2B are diagrams illustrating the configuration of a display device according to an embodiment. Figures 3A and 3B are diagrams illustrating the configuration of a display device according to an embodiment. Figure 4 is a diagram illustrating the configuration of a display device according to an embodiment. Figure 5 is a diagram illustrating the configuration of a display device according to an embodiment. Figure 6 is a diagram illustrating the configuration of a display device according to an embodiment. Figures 7A and 7B are diagrams illustrating the configuration of a display device according to an embodiment. Figures 8A, 8B, and 8C are diagrams illustrating the configuration of a display device according to an embodiment. Figure 9 is a diagram illustrating the configuration of a display device according to an embodiment. Figures 10A and 10B are diagrams illustrating the configuration of a display device according to an embodiment. Figure 11 is a diagram illustrating the configuration of a display device according to an embodiment. Figure 12 is a diagram illustrating the configuration of a display device according to an embodiment. Figures 13A and 13B are diagrams illustrating the configuration of a display device according to an embodiment. Figures 14A, 14B, and 14C are diagrams illustrating the configuration of a display device according to an embodiment. Figure 15 is a diagram illustrating the configuration of a display device according to an embodiment. Figures 16A and 16B are diagrams illustrating the configuration of a display device according to an embodiment. Figure 17 is a diagram illustrating the configuration of a light-emitting device that can be used in the display device according to the embodiment. Figure 18 is a diagram illustrating the configuration of the display device according to the embodiment. Figure 19 is a diagram illustrating the configuration of the display device according to the embodiment. Figures 20A and 20B are diagrams illustrating the configuration of a display module according to the embodiment. Figures 21A and 21B are diagrams illustrating the configuration of a display module according to the embodiment. Figures 22A, 22B, 22C, 22D, and 22E are diagrams illustrating the configuration of the display device according to the embodiment. Figure 23 is a diagram illustrating the configuration of the display device according to the embodiment. Figure 24 is a diagram illustrating the configuration of the display device according to the embodiment. Figure 25 is a diagram illustrating the configuration of the display device according to the embodiment. Figure 26 is a diagram illustrating the configuration of the display device according to the embodiment. Figure 27 is a diagram illustrating the configuration of the display device according to the embodiment. Figure 28 is a diagram illustrating the configuration of the display device according to the embodiment.Figure 29 is a diagram illustrating the configuration of a display device according to an embodiment. Figures 30A, 30B, 30C, and 30D are diagrams illustrating the configuration of transistors that can be used in the display device according to an embodiment. Figures 31A, 31B, 31C, and 31D are diagrams illustrating the configuration of an electronic device according to an embodiment. Figures 32A, 32B, 32C, 32D, 32E, and 32F are diagrams illustrating the configuration of an electronic device according to an embodiment. Figures 33A, 33B, 33C, 33D, 33E, 33F, and 33G are diagrams illustrating the configuration of an electronic device according to an embodiment.

[0052] A display device according to one aspect of the present invention comprises a display area, a first layer, and a second layer. The display area includes a first pixel and a second pixel, the first pixel comprising a first light-emitting device and a first pixel circuit. The first light-emitting device is connected to the first pixel circuit. The second pixel is adjacent to the first pixel, and the second pixel comprises a second light-emitting device and a second pixel circuit, the second light-emitting device being connected to the second pixel circuit. The first layer comprises a first light-emitting device and a second light-emitting device, the second light-emitting device having a first center-to-center distance from the first light-emitting device. The second layer comprises a first pixel circuit and a second pixel circuit, the second pixel circuit having a second center-to-center distance from the first pixel circuit. The second center-to-center distance is greater than the first center-to-center distance. This makes it possible to reduce the area occupied by the first light-emitting device in the first pixel to the area occupied by the first pixel circuit. As a result, a novel display device with superior convenience, usefulness, or reliability can be provided.

[0053] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions, and repeated descriptions are omitted.

[0054] In the drawings attached to this specification, components are classified by function and shown as independent blocks in block diagrams. However, in reality, it is difficult to completely separate components by function, and a single component may be involved in multiple functions.

[0055] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 18.

[0056] Figure 1 is a perspective view illustrating the configuration of a display device according to one embodiment of the present invention.

[0057] Figure 2A is a front view illustrating the configuration of a display device according to one embodiment of the present invention, and Figure 2B is a diagram illustrating a part of Figure 2A.

[0058] Figure 3A is a cross-sectional view along the cutting line A1-A2 shown in Figure 2A, and Figure 3B is a cross-sectional view illustrating a part of Figure 3A.

[0059] Figure 4 is a diagram illustrating the configuration of a display device according to one embodiment of the present invention.

[0060] Figure 5 is a diagram illustrating the configuration of a display device according to one embodiment of the present invention.

[0061] Figure 6 is a perspective view illustrating the configuration of a display device according to one embodiment of the present invention.

[0062] Figure 7A is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention, and Figure 7B is a cross-sectional view illustrating a part of Figure 7A.

[0063] Figure 8A is a front view illustrating the configuration of a display device according to one embodiment of the present invention, and Figures 8B and 8C are diagrams illustrating a part of Figure 8A.

[0064] Figure 9 is a perspective view illustrating the configuration of a display device according to one embodiment of the present invention.

[0065] Figure 10A is a cross-sectional view along the cutting line A1-A2 shown in Figure 8A, and Figure 10B is a cross-sectional view illustrating a part of Figure 10A.

[0066] Figure 11 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0067] Figure 12 is a perspective view illustrating the configuration of a display device according to one embodiment of the present invention.

[0068] Figure 13A is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention, and Figure 13B is a cross-sectional view illustrating a part of Figure 13A.

[0069] Figure 14A is a front view illustrating the configuration of a display device according to one embodiment of the present invention, and Figures 14B and 14C are diagrams illustrating a part of Figure 14A.

[0070] Figure 15 is a perspective view illustrating the configuration of a display device according to one embodiment of the present invention.

[0071] Figure 16A is a cross-sectional view along the cutting line A1-A2 shown in Figure 14A, and Figure 16B is a cross-sectional view illustrating a part of Figure 16A.

[0072] Figure 17 is a cross-sectional view illustrating the configuration of a light-emitting device that can be used in a display device according to one embodiment of the present invention.

[0073] Figure 18 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0074] Figure 19 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0075] <Example of Display Device Configuration 1> The display device 700 described in this embodiment has a display area 731, a layer 520, and a layer 510 (see Figure 1). The display device 700 also includes a wiring layer 512.

[0076] <Example of the configuration of the display area 731> The display area 731 comprises pixels 702(1) and pixels 702(2) (see Figure 2A). In this specification, the display area is the area on which an image is displayed. In this specification, a pixel is the unit that constitutes the display area.

[0077] 《Example of Pixel 702(1) Configuration》 Pixel 702(1) comprises a light-emitting device 550A(1) and a pixel circuit 530A(1), and includes wiring WA(1) (see Figures 3A and 3B). The light-emitting device 550A(1) is connected to the pixel circuit 530A(1). In this specification, the pixel circuit is a circuit that drives the light-emitting device based on an image signal.

[0078] 《Example of the configuration of pixel 702(2)》 Pixel 702(2) is adjacent to pixel 702(1). Pixel 702(2) includes a light-emitting device 550A(2) and a pixel circuit 530A(2), and includes wiring WA(2). The light-emitting device 550A(2) is connected to the pixel circuit 530A(2).

[0079] <Example of layer 520 configuration 1> Layer 520 comprises a light-emitting device 550A(1) and a light-emitting device 550A(2) (see Figure 3A).

[0080] Furthermore, the light-emitting device 550A(2) is provided with a center-to-center distance CD20(12) between it and the light-emitting device 550A(1) (see Figures 2B and 3B). In this specification, the center is defined as the centroid of the figure when viewed from above. The center-to-center distance is defined as the distance between the centroid of one figure and the centroid of another figure when viewed from above.

[0081] <Example of layer 510 configuration 1> Layer 510 includes pixel circuit 530A(1) and pixel circuit 530A(2) (see Figure 3A).

[0082] Furthermore, the pixel circuit 530A(2) has a center-to-center distance CD10(12) between it and the pixel circuit 530A(1) (see Figure 3B). Note that the center-to-center distance CD10(12) is greater than the center-to-center distance CD20(12).

[0083] This makes it possible to reduce the area occupied by the light-emitting device 550A(1) in the pixel 702(1) to less than the area occupied by the pixel circuit 530A(1). As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0084] <Example 2 of the configuration of the display area 731> The display area 731 also includes pixels 702(3) and pixels 702(4). Pixel 702(3) is positioned at the periphery of the display area 731 compared to pixel 702(1) (see Figure 2A).

[0085] 《Example of Pixel 702(3) Configuration》 Pixel 702(3) comprises a light-emitting device 550A(3) and a pixel circuit 530A(3), and includes wiring WA(3) (see Figures 3A and 3B). The light-emitting device 550A(3) is connected to the pixel circuit 530A(3).

[0086] 《Example of the configuration of pixel 702(4)》 Pixel 702(4) is adjacent to pixel 702(3). Pixel 702(4) includes a light-emitting device 550A(4) and a pixel circuit 530A(4), and includes wiring WA(4). The light-emitting device 550A(4) is connected to the pixel circuit 530A(4).

[0087] <Example of layer 520 configuration 2> Layer 520 includes light-emitting devices 550A (3) and 550A (4) (see Figure 3A).

[0088] Furthermore, the light-emitting device 550A(4) has a center-to-center distance CD20(34) between it and the light-emitting device 550A(3) (see Figures 2B and 3B).

[0089] <Example of layer 510 configuration 2> Layer 510 includes pixel circuit 530A (3) and pixel circuit 530A (4) (see Figure 3A).

[0090] Furthermore, the pixel circuit 530A(4) has a center-to-center distance CD10(34) between it and the pixel circuit 530A(3) (see Figure 3B). Note that the center-to-center distance CD10(34) is smaller than the center-to-center distance CD20(34).

[0091] <Example of layer 520 configuration 3> The intercenter distance CD20(34) is greater than the intercenter distance CD20(12).

[0092] This allows the resolution of the peripheral portion of the display area 731 to be lower than that of the central portion of the display area 731. In this specification, the central portion of the display area is defined as the area near the centroid of the display area when viewed from above. The peripheral portion of the display area surrounds the central portion of the display area. Furthermore, the resolution of the central portion of the display area 731 can be higher than that of the peripheral portion of the display area 731. Also, for example, the resolution of the portion that the user of the display device focuses on can be made higher than that of the peripheral portion of the field of view. Furthermore, since users often focus on the central portion of the display area, fixed foveal rendering can be applied. In addition, the display capability of the display device can be appropriately distributed to the display area 731. As a result, a novel display device with superior convenience, usefulness, or reliability can be provided.

[0093] <Example of layer 510 configuration 3> The center-to-center distance CD10(34) is equal to the center-to-center distance CD10(12).

[0094] This allows, for example, the resolution of the peripheral portion of the display area 731 to be lower than that of the central portion of the display area 731, while applying the same pixel circuit configuration to both pixel circuit 530A(1) and pixel circuit 530A(3). Alternatively, for example, the resolution of the central portion of the display area 731 to be higher than that of the peripheral portion of the display area 731, while applying the same pixel circuit configuration to both pixel circuit 530A(1) and pixel circuit 530A(3). Furthermore, for example, the resolution of the portion of the display device that the user focuses on can be made higher than that of the peripheral portion of the display area, while applying the same pixel circuit configuration to both pixel circuit 530A(1) and pixel circuit 530A(3). Additionally, since users often focus on the central portion of the display area, fixed foveal rendering can be applied. Furthermore, for example, by applying the same pixel circuit configuration to pixel circuit 530A(1) and pixel circuit 530A(3), the display capability of the display device can be appropriately distributed to the display area 731. As a result, a novel display device with superior convenience, usefulness, or reliability can be provided.

[0095] <Example of layer 520 configuration 4> Layer 520 includes an area that overlaps with layer 510.

[0096] This reduces the footprint of the display device. It also reduces the footprint of each pixel. As a result, it is possible to provide a novel display device with superior convenience, usefulness, and reliability.

[0097] <Example of layer 520 configuration 5> Layer 520 has a mesh structure 520M (see Figure 4).

[0098] The mesh structure 520M includes mesh 520M(1) and mesh 520M(2), the light-emitting device 550A(1) is located in mesh 510M(1), and the light-emitting device 550A(2) is located in mesh 520M(2).

[0099] Furthermore, the mesh structure 520M includes mesh 520M(3) and mesh 520M(4), the light-emitting device 550A(3) is placed in mesh 520M(3), and the light-emitting device 550A(4) is placed in mesh 520M(4).

[0100] <Example of layer 510 configuration 4> Layer 510 has a mesh structure 510M (see Figure 5). The mesh structure 510M does not overlap with the mesh structure 520M even when superimposed. For example, mesh 520M(1), mesh 520M(2), mesh 520M(3), and mesh 520M(4) are shown by dashed lines in Figure 5. Mesh 520M(1), mesh 520M(2), mesh 520M(3), and mesh 520M(4) do not overlap with the mesh structure 510M.

[0101] The mesh structure 510M includes mesh 510M(1) and mesh 510M(2), with pixel circuit 530A(1) located in mesh 510M(1) and pixel circuit 530A(2) located in mesh 510M(2).

[0102] Furthermore, the mesh structure 510M includes mesh 510M(3) and mesh 510M(4), with the pixel circuit 530A(3) being located in mesh 510M(3) and the pixel circuit 530A(4) being located in mesh 510M(4).

[0103] <Example of Display Device Configuration 2> The display device 700 described in this embodiment has a wiring layer 512A (13) and a wiring layer 512A (24) (see Figures 6 and 7A).

[0104] <Example of the configuration of wiring layer 512A(13)> The wiring layer 512A(13) is sandwiched between layer 520 and wiring layer 512A(24), and the wiring layer 512A(13) includes wiring WA(1). Wiring WA(1) connects the light-emitting device 550A(1) and the pixel circuit 530A(1) (see Figures 7A and 7B).

[0105] <Example of the configuration of wiring layer 512A (24)> The wiring layer 512A (24) is sandwiched between the wiring layer 512A (13) and layer 510, and the wiring layer 512A (24) includes wiring WA (2). Wiring WA (2) connects the light-emitting device 550A (2) and the pixel circuit 530A (2).

[0106] This reduces congestion in the wiring layer compared to the case where wiring WA(1) and wiring WA(2) are placed on the same wiring layer. As a result, a novel display device with superior convenience, usefulness, or reliability can be provided.

[0107] <Example of Display Device Configuration 3> The display device 700 described in this embodiment has a pair of pixels 703(1), a pair of pixels 703(3), a wiring layer 512A, and a wiring layer 512B (see Figures 8A, 9, and 10A).

[0108] <Example of the configuration of a pair of pixels 703(1) 1> A pair of pixels 703(1) comprises a pixel 702A(1) and a pixel 702B(1) (see Figure 8B). Pixel 702A(1) comprises a light-emitting device 550A(1) and a pixel circuit 530A(1), and pixel 702B(1) comprises a light-emitting device 550B(1) and a pixel circuit 530B(1) (see Figures 10A and 10B). Note that the light-emitting device 550B(1) emits a different color than the light-emitting device 550A(1). Also, the light-emitting device 550B(1) is adjacent to the light-emitting device 550A(1) (see Figure 8B).

[0109] <Example of the configuration of a pair of pixels 703(3)> A pair of pixels 703(3) comprises a pixel 702A(3) and a pixel 702B(3). Pixel 702A(3) comprises a light-emitting device 550A(3) and a pixel circuit 530A(3), and pixel 702B(3) comprises a light-emitting device 550B(3) and a pixel circuit 530A(3). The light-emitting device 550A(3) has the same light-emitting color as light-emitting device 550A(1), and the light-emitting device 550B(3) has the same light-emitting color as light-emitting device 550B(1). Furthermore, the light-emitting device 550B(3) is adjacent to the light-emitting device 550A(3) (see Figure 8C).

[0110] <Example of the configuration of wiring layer 512A> Wiring layer 512A includes wiring WA(1) and wiring WA(3). Wiring WA(1) is connected to the light-emitting device 550A(1), and wiring WA(3) is connected to the light-emitting device 550A(3).

[0111] <Example of the configuration of wiring layer 512B> Wiring layer 512B overlaps with wiring layer 512A, and wiring layer 512B includes wiring WB(1) and wiring WB(3). Wiring WB(1) is connected to the light-emitting device 550B(1), and wiring WB(3) is connected to the light-emitting device 550B(3).

[0112] This reduces congestion in the wiring layer compared to the case where wiring WA(1) and wiring WB(1) are placed on the same wiring layer. Furthermore, it reduces congestion in the wiring layer compared to the case where wiring WA(3) and wiring WB(3) are placed on the same wiring layer. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0113] <Example 2 of the configuration of a pair of pixels 703(1)> The display device 700 described in this embodiment includes, for example, a light-emitting device 550R, a light-emitting device 550G, a light-emitting device 550BU, an insulating layer 521, a wiring layer 512A, a wiring layer 512B, a layer 105, and a conductive layer 552 (see Figure 11). Layer IntCR connects the light-emitting device 550R to a pixel circuit (not shown), and layer IntCG connects the light-emitting device 550G to a pixel circuit (not shown). The display device 700 also includes layers 529_1, 529_2, ScrR2, and ScrG2. For example, insulating materials can be used for layers 529_1, 529_2, ScrR2, and ScrG2.

[0114] For example, light-emitting devices that emit blue light, green light, and red light can be applied to light-emitting devices 550R, 550G, and 550BU. This allows light-emitting devices 550R, 550G, and 550BU to emit light of different colors and different brightness levels. Furthermore, full-color display can be achieved using the display device 700.

[0115] <Example of configuration of light-emitting device 550R 1> The light-emitting device 550R comprises an electrode 551R, a layer 104R, and a unit 103R (see Figure 11).

[0116] <Example of Electrode 551R Configuration> The electrode 551R is formed on the insulating layer 521. A layer REFR can be placed between the electrode 551R and the insulating layer 521. For example, a layer containing aluminum or a layer containing silver can be used for the layer REFR. This allows for efficient reflection of the light emitted by the light-emitting device 550R towards the layer REFR.

[0117] <Example of Layer 104R Configuration> Layer 104R is formed on electrode 551R and sandwiched between electrode 551R and unit 103R. Layer 104R also contains a carrier-injectable material CIM.

[0118] 《Example 1 of a carrier-injectable material CIM》 For example, when electrode 551R functions as an anode, a material with hole-injecting properties can be used in a carrier-injectable material CIM. This allows layer 104R to receive holes from electrode 551R and transfer them to unit 103R.

[0119] 《Example 2 of a carrier-injection material CIM》 Furthermore, when electrode 551R functions as a cathode, an electron-injection material can be used in a carrier-injection material CIM. This allows layer 104R to receive electrons from electrode 551R and transfer them to unit 103R.

[0120] 《Example of Unit 103R Configuration》 Unit 103R includes a luminescent material EMR. For example, fluorescent materials, phosphorescent materials, or materials exhibiting thermally activated delayed fluorescence can be used as the luminescent material EMR.

[0121] Furthermore, a structure in which multiple layers are stacked can be used in unit 103R. For example, a layer having hole-transporting properties, a layer containing the luminescent material EMR, and a layer having electron-transporting properties can be used in unit 103R. It is preferable to have a structure in which the layer containing the luminescent material EMR is placed in the region where holes and electrons recombine. For example, the layer having hole-transporting properties is placed on the anode side of the layer containing the luminescent material EMR, and the layer having electron-transporting properties is placed on the cathode side of the layer containing the luminescent material EMR. This allows the energy generated by carrier recombination to be efficiently emitted as light.

[0122] <Example of configuration of light-emitting device 550G 1> The light-emitting device 550G comprises an electrode 551G, a layer 104G, and a unit 103G (see Figure 11).

[0123] 《Example of Electrode 551G Configuration》 Electrode 551G is formed on the insulating layer 521. Electrode 551G is adjacent to electrode 551R, and electrode 551G is positioned with a gap 551RG between it and electrode 551R. Layer REFG can be placed between electrode 551G and the insulating layer 521. For example, a material that can be used for layer REFR can be used for layer REFG.

[0124] 《Example of Layer 104G Configuration》 Layer 104G is formed on electrode 551G and sandwiched between electrode 551G and unit 103G. Layer 104G is also positioned with a gap 104RG between it and layer 104R, and the gap 104RG overlaps with the gap 551RG. Layer 104G contains a carrier-injectable material CIM. Furthermore, a carrier-injectable material that can be used for layer 104R can also be used for layer 104G.

[0125] 《Example of Unit 103G Configuration》 Unit 103G includes the luminescent material EMG. Any material that can be used for the luminescent material EMR can be used for the luminescent material EMG. For example, a material that emits light of a different hue than the light emitted by the luminescent material EMR can be used for the luminescent material EMG.

[0126] Unit 103G is positioned with a gap 103RG between it and unit 103R. The gap 103RG overlaps with the gap 551RG.

[0127] <Example of layer 520 configuration 5> Layer 520 comprises layer 520A and layer 520B (see Figures 12 and 13A).

[0128] <Example of Layer 520A Configuration> Layer 520A comprises a light-emitting device 550A(1) and a light-emitting device 550A(3). Layer 520A has a wiring layer 512A sandwiched between it and layer 520B.

[0129] 《Example of the configuration of layer 520B》 Layer 520B comprises a light-emitting device 550B(1) and a light-emitting device 550B(3). Layer 520B is sandwiched between wiring layers 512A and 512B, and layer 520B sandwiches wiring layer 512B between itself and layer 510.

[0130] This allows the light-emitting device 550A(3) to be formed in a separate process from the process of forming the light-emitting device 550A(1). Furthermore, the process of forming a light-emitting device with the same emission color as light-emitting device 550A(1) can be separated from the process of forming a light-emitting device with the same emission color as light-emitting device 550A(3). Additionally, a light-reflecting lower electrode can be used for the lower electrode of light-emitting device 550A(1). Furthermore, a lower electrode with low light transmittance can be used for the lower electrode of light-emitting device 550A(1). The microcavity structure of light-emitting device 550A(1) can be optimized. Light extraction efficiency can be increased. Color reproducibility can be improved. The aperture ratio can be increased. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0131] <Example of Display Device Configuration 4> The display device 700 described in this embodiment has a pair of pixels 703(1), a pair of pixels 703(3), a wiring layer 512A, and a wiring layer 512B (see Figures 14A and 15).

[0132] A pair of pixels 703(1) comprises pixels 702A(1) and 702B(1). Furthermore, pixel 702A(1) includes a light-emitting device 550A(1), and pixel 702B(1) includes a light-emitting device 550B(1). The light-emitting device 550B(1) emits a different color than light-emitting device 550A(1). Note that the point where light-emitting device 550B(1) overlaps with light-emitting device 550A(1) differs from the configuration example 3 of the display device described above (see Figures 8B and 14B).

[0133] Each pair of pixels 703(3) comprises pixels 702A(3) and 702B(3). Pixel 702A(3) is equipped with a light-emitting device 550A(3), and pixel 702B(3) is equipped with a light-emitting device 550B(3). Furthermore, light-emitting device 550A(3) has the same emission color as light-emitting device 550A(1), and light-emitting device 550B(3) has the same emission color as light-emitting device 550B(1). Note that the point where light-emitting device 550B(3) overlaps with light-emitting device 550A(3) differs from the above-described example of display device configuration 3 (see Figures 8C and 14C).

[0134] <Example 6 of the configuration of layer 520> Layer 520 comprises layer 520A and layer 520B (see Figures 15 and 16A).

[0135] <Example of Layer 520B Configuration> Layer 520B is sandwiched between layers 520A and 510, with a wiring layer 512B sandwiched between layer 520B and layer 510 (see Figure 16A). Layer 520B also includes a light-emitting device 550B(1).

[0136] <Example of Layer 520A Configuration> Layer 520A has a wiring layer 512A sandwiched between it and layer 520B. Layer 520A also includes a light-emitting device 550A(1).

[0137] [Example configuration of light-emitting device 550A(1)] Light-emitting device 550A(1) overlaps with light-emitting device 550B(1) (see Figures 16A and 16B).

[0138] The light-emitting device 550A(1) comprises an electrode 551A(1), a light-emitting unit 103A(1), and an electrode 552A(1) (see Figure 17). The light-emitting device 550A(1) also comprises layers 104A(1) and 105A(1). The light-emitting unit 103A(1) is sandwiched between electrodes 551A(1) and 552A(1). The light-emitting unit 103A(1) also comprises layers 111A(1), 112A(1), and 113A(1). Both electrodes 551A(1) and 552A(1) are translucent.

[0139] This allows for larger areas of light-emitting devices 550A(1) and 550B(1) compared to when they are placed side-by-side. Furthermore, it enables the same brightness display at a lower current density compared to when they are placed side-by-side. Additionally, it improves the reliability of the display device. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0140] <Example of Display Device Configuration 5> The display device described in this embodiment has a dielectric multilayer film DMF_A (see Figure 18).

[0141] <Example of the configuration of the dielectric multilayer film DMF_A> The dielectric multilayer film DMF_A is sandwiched between the light-emitting device 550A(1) and the light-emitting device 550B(1). The dielectric multilayer film DMF_A reflects the light ELA emitted by the light-emitting device 550A(1) and transmits the light emitted by the light-emitting device 550B(1).

[0142] 《Example Configuration of Light-Emitting Device 550B(1)》 Light-emitting device 550B(1) includes a material that absorbs and emits light from the light-emitting device 550A(1)'s light ELA. For example, the light ELB emitted by light-emitting device 550B(1) has a spectrum in which the peak is located at a wavelength longer than the wavelength in which the largest peak of the light ELA's spectrum is located. Specifically, when the light ELA is green light and the light ELB is red light, light-emitting device 550B(1) may include a material that absorbs green light and emits red light. Also, when the light ELA is blue light and the light ELB is red light, light-emitting device 550B(1) may include a material that absorbs blue light and emits red light. Also, when the light ELA is blue light and the light ELB is green light, light-emitting device 550B(1) may include a material that absorbs blue light and emits green light.

[0143] This makes it possible to suppress the phenomenon of the light-emitting device 550B(1) emitting light at an unintended brightness. Furthermore, vivid colors can be displayed using the light-emitting device 550B(1). In addition, the color reproducibility of the display device can be improved. As a result, a novel display device with superior convenience, usefulness, and reliability can be provided.

[0144] <Example of Display Device Configuration 6> The display device described in this embodiment has a dielectric multilayer film DMF_G and a dielectric multilayer film DMF_BU (see Figure 19).

[0145] <Example of Dielectric Multilayer Film DMF_G Configuration> The dielectric multilayer film DMF_G is sandwiched between the light-emitting device 550G(1) and the light-emitting device 550R(1). The dielectric multilayer film DMF_G reflects the light emitted by the light-emitting device 550G(1) and transmits the light emitted by the light-emitting device 550R(1). For example, a dielectric multilayer film that reflects green light and transmits red light can be used for the dielectric multilayer film DMF_G.

[0146] <Example of configuration of light-emitting device 550R(1)> Light-emitting device 550R(1) includes a material that absorbs light emitted by light-emitting device 550G(1) and emits light. For example, light-emitting device 550R(1) includes a material that absorbs green light and emits red light. Light-emitting device 550R(1) emits red light ELR.

[0147] <Example of Dielectric Multilayer Film DMF_BU Configuration> The dielectric multilayer film DMF_BU is sandwiched between the light-emitting device 550BU(1) and the light-emitting device 550G(1). The dielectric multilayer film DMF_BU reflects the light emitted by the light-emitting device 550BU(1) and transmits the light emitted by the light-emitting device 550R(1) and the light emitted by the light-emitting device 550G(1). For example, a dielectric multilayer film that reflects blue light and transmits red and green light can be used for the dielectric multilayer film DMF_BU.

[0148] <Example of configuration of light-emitting device 550G(1)> Light-emitting device 550G(1) includes a material that absorbs light emitted by light-emitting device 550B(1) and emits light. For example, light-emitting device 550G(1) includes a material that absorbs blue light and emits green light. Light-emitting device 550G(1) emits green light ELG.

[0149] <Example configuration of light-emitting device 550BU(1)> For example, the light-emitting device 550BU(1) emits blue light ELBU.

[0150] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0151] (Embodiment 2) In this embodiment, an example of the configuration of a display module and a display device that can be used as a display device according to one aspect of the present invention will be described with reference to Figures 20 to 30.

[0152] Figure 20A is a perspective view illustrating a display module according to one embodiment of the present invention, and Figure 20B is a schematic diagram illustrating the configuration of the display module shown in Figure 20A.

[0153] Figure 21A is a perspective view illustrating a display module according to one embodiment of the present invention, and Figure 21B is a schematic diagram illustrating the configuration of the display module shown in Figure 21A.

[0154] Figure 22A is a block diagram illustrating a display module according to one embodiment of the present invention, and Figures 22B to 22E are schematic diagrams illustrating the configuration of the display module shown in Figure 22A.

[0155] Figure 23 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0156] Figure 24 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0157] Figure 25 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0158] Figure 26 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0159] Figure 27 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0160] Figure 28 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0161] Figure 29 is a cross-sectional view illustrating the configuration of a display device according to one embodiment of the present invention.

[0162] Figures 30A to 30C are cross-sectional views illustrating the configuration of a transistor that can be used in a display device according to one embodiment of the present invention, and Figure 30D is a front view of the transistor shown in Figure 30C.

[0163] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, as a display unit for wristwatch-type and bracelet-type information terminals (wearable devices), as well as as a display unit for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0164] The display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television equipment, desktop or notebook computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0165] <Example of Display Module 280 Configuration 1> The display module 280 includes a display device 700 and an FPC 290 (see Figure 20A). Note that, instead of the display device 700, for example, any of the display devices 700A to 700F2 described later can be used in the display module 280.

[0166] <Example of the configuration of the display device 700> The display device 700 has a substrate 291 and a substrate 292. The display device 700 has a display unit 281. The display unit 281 is an area for displaying an image. The display unit 281 also includes a pixel unit 284.

[0167] Figure 20B shows a perspective view illustrating part of the configuration of the display device 700. A circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291. A terminal section 285 is provided on the outside of the pixel section 284 on the substrate 291. A wiring section 286 is provided between the circuit section 282 and the terminal section 285. The wiring section 286 has multiple wires and connects the terminal section 285 and the circuit section 282. The display device 700 is connected to the FPC 290 at the terminal section 285.

[0168] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Figure 20B. The pixel 284a comprises a plurality of subpixels. For example, the pixel 284a includes a subpixel equipped with a light-emitting device FP_406R, a subpixel equipped with a light-emitting device FP_406G, and a subpixel equipped with a light-emitting device FP_406B.

[0169] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0170] For example, the pixel circuit 283a can have a configuration that includes at least one selection transistor, one current control transistor (drive transistor), and a capacitor. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active-matrix type display device.

[0171] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it is also possible to have a configuration that has at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0172] The FPC 290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An integrated circuit (IC) can also be mounted on the FPC 290.

[0173] The display device 700 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are superimposed on the lower side of the pixel section 284, thereby making the aperture ratio (effective display area ratio) of the display section 281 extremely high. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, making the resolution of the display section 281 extremely high. For example, it is preferable that the pixels 284a are arranged in the display section 281 at a density of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, with a resolution of 20000 ppi or less, or 30000 ppi or less.

[0174] Because such a display device 700 has an extremely high-resolution display unit 281, it can be suitably used in VR devices such as HMDs or AR devices in the form of glasses. For example, even in a configuration where the display unit is magnified and viewed through lenses, individual pixels cannot be distinguished, thus providing a highly immersive display. Furthermore, it can be suitably used in electronic devices with relatively small display units, such as wearable electronic devices like watches.

[0175] <Example 2 of the display module 280 configuration> The display module 280 also includes a display device 700 and FPCs 290_1 to 290_4 (see Figure 21A). The display device 700 has a rectangular shape. FPCs 290_1 to 290_4 are connected to the four corners of the display device 700.

[0176] The display device 700 has a substrate 291 and a display unit 281 (see Figure 21B). The substrate 291 has a roughly rectangular shape. The outer shape of the display unit 281 is smaller than the outer shape of the display unit 281, and its four corners are rounded. Alternatively, the outer shape of the display unit 281 is smaller than the outer shape of the display unit 281, and it has an elliptical or circular shape.

[0177] For example, in a goggle-type or glasses-type display device, the area near the corners of the substrate 291 cannot be used for display. Therefore, the corners of the display unit 281 can be made more rounded than the corners of the substrate 291. Also, the distance from the outer shape of the substrate 291 to the outer shape of the display unit 281 can be made longer at the corners of the substrate 291 than at the edges. Furthermore, terminal units 285_1 to 285_4 can be placed in the area from the outer shape of the substrate 291 to the outer shape of the display unit 281. In addition, the utilization efficiency of the substrate 291 can be increased.

[0178] <Example of Display Device 700 Configuration 2> The display device 700 has a pixel array 74, a circuit 75, and a circuit 76 (see Figure 22A). The pixel array 74 has pixels 40 arranged in the column direction and row direction.

[0179] Pixel 40 may have multiple sub-pixels 71. The sub-pixels 71 have the function of emitting light for display. By assigning colors such as R (red), G (green), and B (blue) to the light emitted by the sub-pixels 71, full-color display can be achieved.

[0180] The sub-pixel 71 has a light-emitting device that emits unpolarized visible light. Preferably, an EL element such as an OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) is used as the light-emitting device. Examples of light-emitting materials for the EL element include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (such as quantum dot materials). In addition, LEDs such as microLEDs can be used as the light-emitting device.

[0181] Circuits 75 and 76 are driver circuits for driving the sub-pixels 71. Circuit 75 can function as a source driver circuit, and circuit 76 can function as a gate driver circuit. Circuits 75 and 76 can be, for example, shift register circuits.

[0182] Furthermore, the display device 700 can be divided into multiple areas vertically and horizontally, and each divided area can be driven separately.

[0183] For example, as shown in Figure 22B, circuits 75 and 76 can be separated and placed below the pixel array 74. In this case, the display device 700 has a stacked structure of layers 77 and 78, with multiple circuits 75 and 76 each provided on layer 77, and the pixel array 74 provided on layer 78 so as to overlap them.

[0184] By dividing and arranging circuits 75 and 76, the pixel array 74 can be driven in divided regions. For example, the pixel array 74 can be operated at partially different frame rates. The pixel array 74 can be displayed at partially different resolutions, and it can also be made compatible with foveal rendering.

[0185] Furthermore, by placing the driver circuit in the lower layer of the pixel array 74, the wiring length can be shortened and the wiring capacitance can be reduced. Therefore, a display device that can operate at high speed and with low power consumption can be made. In addition, the display device 700 can have a narrow bezel.

[0186] Note that the arrangement and area of ​​circuits 75 and 76 shown in Figure 22B are examples and can be changed as appropriate. Also, parts of circuits 75 and 76 can be formed on the same layer as the pixel array 74. Furthermore, memory circuits, arithmetic circuits, and communication circuits can be provided on layer 77.

[0187] This configuration, for example, involves providing layer 77 on a single-crystal silicon substrate, forming circuits 75 and 76 with transistors having silicon in the channel formation region (hereinafter referred to as Si transistors), and forming the pixel circuits of the pixel array 74 provided on layer 78 with transistors having oxide semiconductors in the channel formation region (hereinafter referred to as OS transistors). OS transistors can be formed using thin films and can be stacked on top of Si transistors.

[0188] The layer 79 on which the OS transistor is provided can be provided between layer 77 and layer 78 (see Figure 22C). Layer 79 can be provided with an OS transistor that forms part of the pixel circuit of the pixel array 74. Alternatively, it can be provided with an OS transistor that forms part of circuits 75 and 76. Alternatively, it can be provided with an OS transistor that forms part of circuits such as memory circuits, arithmetic circuits, and communication circuits that can be provided in layer 77.

[0189] Furthermore, the shape of the display device 700 in a top view is not limited to a rectangle; for example, it can be a circle or a polygon (see Figures 22D and 22E).

[0190] The display device of this embodiment is a high-definition display device and is particularly suitable for use in the display section of VR equipment such as head-mounted displays, and wearable devices that can be worn on the head, such as glasses-type AR equipment.

[0191] <Display device 700A> The display device 700A comprises layer FP, functional layer FL1, and functional layer FL2 (see Figure 23).

[0192] The layered FP comprises light-emitting devices FP_406R, FP_406G, and FP_406B. The layered FP also comprises a protective layer FP_421, a layer FP_422, and a substrate FP_130.

[0193] For example, the configuration of the light-emitting device described in Embodiment 1 can be applied to light-emitting devices FP_406R, FP_406G, and FP_406B.

[0194] The protective layer FP_421 covers the light-emitting devices FP_406R, FP_406G, and FP_406B, and the protective layer FP_421 has a single-layer structure or a multi-layer structure.

[0195] The protective layer FP_421 includes at least an inorganic insulating film. For example, oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon oxide nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film can be used for the protective layer FP_421. In addition, semiconductor materials or conductive materials such as indium gallium oxide, indium zinc oxide, indium tin oxide, and indium gallium zinc oxide can be used for the protective layer FP_421.

[0196] The substrate FP_130 covers the light-emitting devices FP_406R, FP_406G, and FP_406B. For example, glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc., can be used. The substrate that extracts light from the light-emitting devices uses a material that transmits the light. Furthermore, using a flexible material for the substrate FP_130 can increase the flexibility of the display device. A polarizing plate can also be used for the substrate FP_130.

[0197] Specifically, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc., can be used as the substrate FP_130.

[0198] Furthermore, films with high optical isotropy can be used as the substrate FP_130. For example, triacetylcellulose (TAC, also called cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film can be used as the substrate FP_130.

[0199] Layer FP_422 is sandwiched between substrate FP_130 and protective layer FP_421. Layer FP_422 has the function of bonding substrate FP_130 and protective layer FP_421 together.

[0200] For example, various types of curing adhesives, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives, can be used in layer FP_422. Specifically, epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins can be used in layer FP_422. Two-component mixed resins can also be used. Alternatively, adhesive sheets can be used. Materials with low moisture permeability, such as epoxy resins, are particularly preferred.

[0201] Functional layer FL1 comprises insulating layer FL1_210, conductive layer FL1_302, insulating layer FL1_204, conductive layer FL1_303, conductive layer FL1_306, insulating layer FL1_207a, insulating layer FL1_207b, conductive layer FL1_304, insulating layer FL1_207c, and conductive layer FL1_301.

[0202] The conductive layer FL1_302 is provided on the insulating layer FL1_210, with the insulating layer FL1_210 sandwiched between the conductive layer FL1_302 and the conductive layer FL2_301 of the functional layer FL2, which will be described later. The conductive layer FL1_302, the conductive layer FL2_301 of the functional layer FL2, which will be described later, and the insulating layer FL1_210 constitute the capacitance FL_408.

[0203] Furthermore, by using materials with low light transmittance for conductive layers FL1_302 and FL2_301, the amount of light incident on transistor FL2_401 of the functional layer FL2, which will be described later, can be suppressed. It is also more preferable that one or both of conductive layers FL2_301 and FL1_302 have a region that overlaps with transistor FL2_401 (particularly the channel formation region).

[0204] The insulating layer FL1_204 is provided on the conductive layer FL1_301. For example, one or more silicon oxide films, silicon oxide-nitride films, aluminum oxide films, silicon nitride films, and silicon nitride-oxide films can be used for the insulating layer FL1_204.

[0205] The conductive layer FL1_306 is provided on the insulating layer FL1_204. The conductive layer FL1_306 functions, for example, as wiring.

[0206] The conductive layer FL1_303 is embedded in the insulating layer FL1_204. The conductive layer FL1_303 functions as a plug, connecting the conductive layers FL1_306 and FL1_302.

[0207] The insulating layer FL1_207a is provided on the insulating layer FL1_204 and the conductive layer FL1_306.

[0208] The insulating layer FL1_207b is provided on the insulating layer FL1_207a. It is particularly preferable that the insulating layer FL1_207b has low transmittance of light with energy greater than or equal to the band gap of the semiconductor material of the semiconductor layer of the transistor provided in the functional layer FL2, i.e., light with a short wavelength. This effectively suppresses fluctuations in the electrical characteristics of the transistor and improves the reliability of the display device. For example, if the band gap of the semiconductor material of the semiconductor layer is 3.1 eV, it is particularly preferable that the insulating layer FL1_207b has low transmittance of light with energy of 3.1 eV or more (wavelength of approximately 400 nm or less). For example, red, green, brown, and black resins can be suitably used for the insulating layer FL1_207b because they have low transmittance of short-wavelength light.

[0209] The insulating layer FL1_207c is provided on the insulating layer FL1_207b.

[0210] The light-emitting device FP_406R is provided on the insulating layer FL1_207c.

[0211] Functional layer FL2 comprises a substrate FL2_110, an element isolation layer FL2_111, a transistor FL2_401, an insulating layer FL2_205, a conductive layer FL2_301, an insulating layer FL2_201, and a conductive layer FL2_303.

[0212] The conductive layer FL2_301 is embedded in the insulating layer FL2_201. Furthermore, both the conductive layer FL2_301 and the insulating layer FL2_201 are covered by the insulating layer FL1_210.

[0213] The transistor FL2_401 is a transistor having a channel formation region in the substrate FL2_110. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used as the substrate FL2_110. The substrate FL2_110 corresponds to the substrate 291 in Figures 20A and 20B.

[0214] The element isolation layer FL2_111 is located between two adjacent transistors FL2_401 and is embedded in the substrate FL2_110.

[0215] [Transistor FL2_401] Transistor FL2_401 has a portion of substrate FL2_110, a conductive layer 401_11, a low-resistance region 401_12, an insulating layer 401_13, and an insulating layer 401_14 (see Figure 30A). Conductive layer 401_11 functions as a gate electrode. Insulating layer 401_13 is located between substrate FL2_110 and conductive layer 401_11 and functions as a gate insulating layer. Low-resistance region 401_12 is a region of substrate FL2_110 doped with impurities and functions as either a source or a drain. Insulating layer 401_14 covers the side surface of conductive layer 401_11.

[0216] The insulating layer FL2_205 covers the transistor FL2_401.

[0217] The conductive layer FL2_303 is embedded in the insulating layer FL2_205 and functions as a plug. The conductive layer FL2_303 connects one of the source and drains of transistor FL2_401 to the conductive layer FL2_303. In other words, the conductive layer FL2_303 connects transistor FL2_401 to capacitor FL_408.

[0218] The transistor FL2_401 can, for example, be used to configure a pixel circuit.

[0219] <Display device 700B> The display device 700B comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 24). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0220] Furthermore, the display device 700B differs from the display device 700A in that it includes a functional layer FL3 and has a different configuration of the functional layer FL2. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0221] Functional layer FL2: The functional layer FL2 comprises a substrate FL2_110, a transistor FL2_401, and an element isolation layer FL2_111. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used for the substrate FL2_110.

[0222] Transistor FL2_401 is a transistor having a channel formation region on substrate FL2_110.

[0223] Furthermore, the functional layer FL2 comprises an insulating layer FL2_112, an insulating layer FL2_113, and a conductive layer FL2_312 on the side of the substrate FL2_110 where the functional layer FL3 is located. Additionally, the functional layer FL2 comprises a conductive layer FL2_305 and an insulating layer FL2_205c.

[0224] The insulating layer FL2_112 has the function of suppressing the diffusion of impurities that could impair the reliability of the transistor FL2_401 into the substrate FL2_110. For example, an inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL2_112.

[0225] The insulating layer FL2_113 is provided on the side of the insulating layer FL2_112 where the functional layer FL3 is located.

[0226] The conductive layer FL2_312 is provided so as to be embedded in the insulating layer FL2_113. Preferably, both the surface of the conductive layer FL2_312 that is in contact with the functional layer FL3 and the surface of the insulating layer FL2_113 that is in contact with the functional layer FL3 are flattened.

[0227] The conductive layer FL2_312 can be, for example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements. In particular, copper can be suitably used for the conductive layer FL2_312.

[0228] The conductive layer FL2_305 penetrates the substrate FL2_110 and the insulating layer FL2_112. Furthermore, the conductive layer FL2_305 is connected to the conductive layer FL2_312.

[0229] The insulating layer FL2_205c covers the sides of the conductive layer FL2_305. The insulating layer FL2_205c has the function of suppressing the diffusion of impurities that could impair the reliability of the transistor FL2_401 into the substrate FL2_110. For example, an inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL2_205c.

[0230] Functional layer FL3 comprises a substrate FL3_110, an element isolation layer FL3_111, a transistor FL3_401, a conductive layer FL3_303, an insulating layer FL3_205, and an insulating layer FL3_205b. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used as the substrate FL3_110.

[0231] Transistor FL3_401 is a transistor having a channel formation region on substrate FL3_110.

[0232] Furthermore, the functional layer FL3 comprises an insulating layer FL3_205b, an insulating layer FL3_201, and a conductive layer FL3_311 on the side of the insulating layer FL3_205 where the functional layer FL2 is located, and the functional layer FL3 is bonded to the functional layer FL2.

[0233] The insulating layer FL3_205b has the function of suppressing the diffusion of impurities that could impair the reliability of the transistor FL3_401 into the substrate FL3_110. For example, an inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL3_205b.

[0234] The insulating layer FL3_201 is provided on the side where the functional layer FL2 of the insulating layer FL3_205b is located.

[0235] The conductive layer FL3_311 is provided so as to be embedded in the insulating layer FL3_201. Preferably, both the surface of the conductive layer FL3_311 that is in contact with the functional layer FL2 and the surface of the insulating layer FL3_201 that is in contact with the functional layer FL2 are flattened.

[0236] By improving the flatness of the surface formed by the conductive layer FL3_311 and the insulating layer FL3_201, and the flatness of the surface formed by the conductive layer FL2_312 and the insulating layer FL2_113, the conductive layer FL3_311 and the conductive layer FL2_312 can be bonded together well.

[0237] It is preferable that the conductive layer FL2_312 uses the same conductive material as the conductive layer FL3_311. In particular, it is preferable to use copper for both the conductive layer FL3_311 and the conductive layer FL2_312. This allows the application of Cu-Cu direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other). The conductive layer FL2_312 is bonded to the conductive layer FL3_311, and the functional layers FL2 and FL3 are connected.

[0238] <Display device 700C> The display device 700C comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 25). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0239] Note that the display device 700C differs from the display device 700B in that the functional layer FL2 does not have an insulating layer FL2_113, the functional layer FL3 does not have an insulating layer FL3_201, the conductive layer FL3_311 and the conductive layer FL2_312 are connected using a bump FL_411, and the functional layer FL2 and the functional layer FL3 are bonded together using an adhesive layer FL_412. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0240] Bump FL_411 is sandwiched between conductive layers FL3_311 and FL2_312. For example, conductive materials including gold (Au), nickel (Ni), indium (In), and tin (Sn) can be used for bump FL_411. Alternatively, solder can be used for bump FL_411.

[0241] The adhesive layer FL_412 is sandwiched between the functional layers FL2 and FL3. The adhesive layer FL_412 has the function of bonding the functional layers FL2 and FL3 together.

[0242] <Display device 700D> The display device 700D comprises layer FP, functional layer FL1, and functional layer FL2 (see Figure 26).

[0243] Note that the display device 700D differs from the display device 700A in that the configuration of the functional layer FL2 is different. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0244] Functional layer FL2 consists of substrate FL2_120, insulating layer FL2_202a, insulating layer FL2_202b, transistor FL2_402, insulating layer FL2_208, insulating layer FL2_203a, insulating layer FL2_203b, and insulating layer FL2_204.

[0245] An insulating substrate or a semiconductor substrate can be used as the substrate FL2_120. Note that substrate FL2_120 corresponds to substrate 291 in Figures 20A and 20B.

[0246] The insulating layer FL2_202a is provided on the substrate FL2_120. The insulating layer FL2_202a has the function of suppressing the diffusion of impurities (e.g., water and hydrogen) that impair the reliability of transistor FL2_402 into transistor FL2_402. In addition, the insulating layer FL2_202a functions as a barrier layer that prevents oxygen from being detached from semiconductor layer 402_21 to insulating layer FL2_202a. For example, a film that is less resistant to hydrogen or oxygen diffusion than a silicon oxide film can be used for the insulating layer FL2_202a. Specifically, aluminum oxide films, hafnium oxide films, silicon nitride films, etc., can be used for the insulating layer FL2_202a.

[0247] Transistor FL2_402 Transistor FL2_402 has a semiconductor layer 402_21, an insulating layer 402_23, a conductive layer 402_24, a pair of conductive layers 402_25, an insulating layer FL2_202b, and a conductive layer 402_27 (see Figure 30B). Transistor FL2_402 is an OS transistor in which an oxide semiconductor is applied to the semiconductor layer where the channel is formed.

[0248] The conductive layer 402_27 is provided on the insulating layer FL2_202a. The conductive layer 402_27 functions as the first gate electrode of the transistor FL2_402.

[0249] The insulating layer FL2_202b covers the conductive layer 402_27. Furthermore, the upper surface of the insulating layer FL2_202b is preferably flattened. It is preferable to use an oxide insulating film, such as a silicon oxide film, in at least the portion of the insulating layer FL2_202b that is in contact with the semiconductor layer 402_21. A portion of the insulating layer FL2_202b functions as the first gate insulating layer.

[0250] The semiconductor layer 402_21 is provided on the insulating layer FL2_202b. For example, an oxide semiconductor film can be used for the semiconductor layer 402_21.

[0251] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited, and any amorphous semiconductor, single-crystal semiconductor, or semiconductor having crystalline properties other than single crystal (microcrystalline semiconductor, polycrystalline semiconductor, or semiconductor having a crystalline region in part) may be used. Using a single-crystal semiconductor or a semiconductor having crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0252] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced.

[0253] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0254] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0255] Examples of metal oxides that can be used in semiconductor layers include indium oxide, gallium oxide, and zinc oxide. Furthermore, it is preferable that the metal oxide contains two or three elements selected from indium, element M, and zinc. Element M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, it is preferable that element M is one or more elements selected from aluminum, gallium, yttrium, and tin.

[0256] Furthermore, when using a metal oxide for the semiconductor layer, it is preferable to form the metal oxide using either the sputtering method or the ALD method. When forming the metal oxide using the sputtering method, productivity can be increased and film density can be improved. When forming the metal oxide using the ALD method, the film coverage can be improved.

[0257] In particular, it is preferable to use an oxide containing indium, gallium, and zinc (also referred to as IGZO) as the metal oxide used in the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc (also referred to as ITZO®). Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, aluminum, and zinc (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium, aluminum, gallium, and zinc (also referred to as IAGZO).

[0258] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Examples of such atomic ratios of metal elements in an In-M-Zn oxide include: In:M:Zn = 1:1:1 or near that composition, In:M:Zn = 1:1:1.2 or near that composition, In:M:Zn = 1:3:2 or near that composition, In:M:Zn = 1:3:4 or near that composition, In:M:Zn = 2:1:3 or near that composition, In:M:Zn = 3:1:2 or near that composition, In:M:Zn = 4:2: Compositions include 3 or near 3, In:M:Zn = 4:2:4.1 or near 4, In:M:Zn = 5:1:3 or near 5, In:M:Zn = 5:1:6 or near 5, In:M:Zn = 5:1:7 or near 5, In:M:Zn = 5:1:8 or near 5, In:M:Zn = 6:1:6 or near 6, and In:M:Zn = 5:2:5 or near 5. Note that "near 5" means within a range of ±30% of the desired atomic ratio.

[0259] Furthermore, it is preferable to use gallium or tin as element M. Note that multiple elements mentioned above may be combined as element M. Also, it is preferable to use In:M:Zn = 40:1:10 and a nearby metal oxide for the semiconductor layer. Specifically, In:Sn:Zn = 40:1:10 and a nearby metal oxide can be suitably used.

[0260] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar composition, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar composition, it includes cases where, when In is set to 5, Ga is greater than 0.5 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar composition, it includes cases where, when In is set to 1, Ga is greater than 0.5 and 2 or less, and Zn is greater than 0.5 and 2 or less.

[0261] Furthermore, the semiconductor layer may have two or more metal oxide layers with different compositions. For example, a laminated structure can be suitably used in which a first metal oxide layer has a composition of In:M:Zn = 1:3:4 [atomic ratio] or close to that, and a second metal oxide layer provided on the first metal oxide layer has a composition of In:M:Zn = 1:1:1 [atomic ratio] or close to that. In addition, it is particularly preferable to use gallium or aluminum as element M.

[0262] Alternatively, a laminated structure may be used, for example, of one selected from indium oxide, indium gallium oxide, and IGZO, and one selected from IAZO, IAGZO, and ITZO (registered trademark).

[0263] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0264] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (also called off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display panels.

[0265] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied to the source-drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0266] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit a smaller change in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby allowing control of the current flowing to the light-emitting device. This allows for an increase in the number of grayscale levels in the pixel circuit.

[0267] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, a stable current can be supplied to the light-emitting device even if there are variations in the current-voltage characteristics of the EL device. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0268] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "reduced power consumption," "increased luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0269] A pair of conductive layers 402_25 are provided in contact with the semiconductor layer 402_21 and function as source electrodes and drain electrodes.

[0270] The insulating layer FL2_208 covers the top and side surfaces of the pair of conductive layers 402_25, as well as the side surfaces of the semiconductor layer 402_21. The insulating layer FL2_208 has the function of suppressing the diffusion of impurities (e.g., water and hydrogen) that impair the reliability of the transistor FL2_402 into the transistor FL2_402. In addition, the insulating layer FL2_208 functions as a barrier layer that prevents the desorption of oxygen from the semiconductor layer 402_21 to the insulating layer FL2_208. For example, a film that is less resistant to hydrogen or oxygen diffusion than a silicon oxide film can be used for the insulating layer FL2_208. Furthermore, an insulating film similar to the insulating layer FL2_202a can be used for the insulating layer FL2_208.

[0271] The insulating layer FL2_203a is provided on the insulating layer FL2_208. Furthermore, both the insulating layer FL2_203a and the insulating layer FL2_208 have openings that reach the semiconductor layer 402_21. The insulating layer FL2_203a functions as an interlayer insulating layer.

[0272] The insulating layer 402_23 is in contact with the side surface of the insulating layer FL2_208, the side surface of the insulating layer FL2_203a, the side surface of the conductive layer 402_25, and the upper surface of the semiconductor layer 402_21 on the inside of the opening. The insulating layer 402_23 functions as a second gate insulating layer.

[0273] The conductive layer 402_24 is in contact with the insulating layer 402_23 and is embedded inside the opening. The conductive layer 402_24 functions as a second gate electrode. The upper surface of the conductive layer 402_24 forms a surface that is substantially the same as the upper end of the insulating layer 402_23 and the upper end of the insulating layer FL2_203a.

[0274] The insulating layer FL2_203b covers the upper surface of the conductive layer 402_24, the upper surface of the insulating layer 402_23, and the upper surface of the insulating layer FL2_203a. The insulating layer FL2_203b has the function of suppressing the diffusion of impurities (e.g., water and hydrogen) that impair the reliability of transistor FL2_402 into transistor FL2_402. Note that an insulating film similar to that of insulating layer FL2_202a can be used for insulating layer FL2_203b.

[0275] The insulating layer FL2_204 covers the insulating layer FL2_203b. The insulating layer FL2_204 functions as an interlayer insulating layer.

[0276] Furthermore, the functional layer FL2 includes a conductive layer FL2_303. The conductive layer FL2_303 is embedded in the insulating layers FL2_203a, FL2_203b, and FL2_204. The conductive layer FL2_303 connects one of the pair of conductive layers 402_25 to the conductive layer FL2_301. In other words, the conductive layer FL2_303 connects the transistor FL2_402 to the capacitor FL2_408.

[0277] The transistor FL2_402 can, for example, be used to configure a pixel circuit.

[0278] The conductive layer FL2_303 comprises conductive layer FL2_303a and conductive layer FL2_303b. Conductive layer FL2_303a covers the sides of the openings in the insulating layers FL2_204, FL2_203b, FL2_203a, and FL2_208, and a portion of the upper surface of conductive layer 402_25. Conductive layer FL2_303b is in contact with the upper surface of conductive layer FL2_303a. Conductive material that does not readily allow hydrogen and oxygen to diffuse can be suitably used for conductive layer FL2_303a.

[0279] <Display device 700E> The display device 700E comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 27). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0280] The display device 700E differs from the display device 700D in that the functional layer FL2 is replaced by a functional layer FL3 instead of the substrate FL2_120. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0281] In this embodiment, a configuration in which both stacked layers comprise transistors having oxide semiconductors is illustrated, but the invention is not limited to this configuration. For example, a configuration in which all three stacked layers comprise transistors having oxide semiconductors is also possible.

[0282] Functional layer FL2: Functional layer FL2 is formed on the insulating layer FL3_206 of functional layer FL3, which will be described later. In addition, insulating layer FL2_202a covers insulating layer FL3_206, which will be described later.

[0283] Functional layer FL3 comprises substrate FL3_120, insulating layer FL3_202a, insulating layer FL3_202b, transistor FL3_402, insulating layer FL3_208, insulating layer FL3_203a, insulating layer FL3_203b, insulating layer FL3_204, conductive layer FL3_303, and insulating layer FL3_206. The conductive layer FL3_303 also comprises conductive layer FL3_303a and conductive layer FL3_303b.

[0284] For example, a configuration similar to that of functional layer FL2 can be used for functional layer FL3. Furthermore, a configuration similar to that of transistor FL2_402 can be applied to transistor FL3_402.

[0285] <Display device 700F1> The display device 700F1 comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 28). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0286] The display device 700F1 differs from the display device 700E in that the functional layer FL3 includes a transistor having a channel-forming region in the substrate FL3_110, instead of a transistor containing an oxide semiconductor in the semiconductor layer where the channel is formed. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0287] 《Functional Layer FL3》 The functional layer FL3 comprises a substrate FL3_110, an element isolation layer FL3_111, a transistor FL3_401, a conductive layer FL3_303, and an insulating layer FL3_205. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used for the substrate FL3_110. For a description of these components, please refer to the description of the functional layer FL3 of the display device 700B.

[0288] Furthermore, the functional layer FL3 comprises a conductive layer FL3_307, an insulating layer FL3_207, and a conductive layer FL3_308.

[0289] The conductive layer FL3_307 is provided on the insulating layer FL3_205 and functions as wiring.

[0290] The insulating layer FL3_207 covers the conductive layer FL3_307.

[0291] The conductive layer FL3_308 is provided on the insulating layer FL3_207 and functions as wiring.

[0292] The transistor FL3_401 in the functional layer FL3 can, for example, constitute a pixel circuit or a drive circuit (gate line drive circuit, source line drive circuit) for driving said pixel circuit.

[0293] Furthermore, the transistor FL3_401 in the functional layer FL3 and the transistor FL2_402 in the functional layer FL2 can constitute various circuits such as arithmetic circuits or memory circuits.

[0294] This configuration allows for the formation of not only pixel circuits but also drive circuits and other components directly beneath the light-emitting device. Furthermore, it enables the miniaturization of the display device compared to cases where the drive circuits are located around the display area.

[0295] <Display device 700F2> The display device 700F2 comprises layer FP, functional layer FL1, functional layer FL2, and functional layer FL3 (see Figure 29). Functional layer FL2 is sandwiched between functional layer FL3 and functional layer FL1.

[0296] The transistor configuration of the functional layer FL2 of the display device 700F2 differs from that of the display device 700F1. Here, the parts with different configurations will be explained in detail, and the above explanation will be used as a reference for parts where the same configuration can be used.

[0297] Functional layer FL2: Functional layer FL2 comprises insulating layer FL2_202a, insulating layer FL2_209, transistor FL2_403, insulating layer FL2_203a, insulating layer FL2_203b, and insulating layer FL2_204. Insulating layer FL3_206 covers functional layer FL3. In addition, insulating layer FL2_202a covers insulating layer FL3_206.

[0298] [Transistor FL2_403] Transistor FL2_403 has a conductive layer 403_25a, an insulating layer FL2_209, a conductive layer 403_25b, a semiconductor layer 403_21, an insulating layer FL2_202b, and a conductive layer 403_27 (see Figure 30C). Note that in transistor FL2_403, the source electrode and drain electrode are located at different heights with respect to the surface to be formed (here, the upper surface of the insulating layer FL2_202a), and the drain current flows perpendicular to, or approximately perpendicular to, the upper surface of the insulating layer FL2_202a. That is, the channel length direction can be said to have a component in the height direction (vertical direction). Note that transistor FL2_403 can be called a VFET (Vertical Field Effect Transistor), vertical transistor, vertical channel transistor, or vertical channel type transistor.

[0299] The channel length L of transistor FL2_403 can be controlled by the thickness of the insulating layer (here, insulating layer FL2_209) sandwiched between the source electrode and the drain electrode. In Figure 30C, the channel length L of transistor FL2_403 is indicated by a double arrow. Therefore, transistor FL2_403 with a channel length L shorter than the minimum exposure dimension of the exposure apparatus used to fabricate the transistor (for example, 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less, and 1 nm or more, or 5 nm or more) can be fabricated with high precision. By shortening the channel length L of transistor FL2_403, the on-current can be increased. This makes it possible to create a display device that operates at high speed.

[0300] The transistor FL2_403 can have its source electrode, semiconductor layer, and drain electrode stacked on top of each other. Therefore, compared to a so-called planar transistor in which these are arranged in a planar configuration, the occupied area can be significantly reduced. By applying a VFET to the pixel circuit of a display device, the occupied area of ​​the pixel circuit can be reduced, resulting in a high-definition display device.

[0301] As shown in Figure 30D, by forming the opening FL2_490 so that it is circular or roughly circular in top view, the semiconductor layer 403_21, the insulating layer FL2_202b, and the conductive layer 403_27 are arranged concentrically. As a result, the distance between the conductive layer 403_27 and the semiconductor layer 403_21 becomes roughly uniform, so that the gate electric field can be applied to the semiconductor layer 403_21 roughly uniformly.

[0302] The side surface of the conductive layer 403_27 faces the side surface of the semiconductor layer 403_21 via the insulating layer FL2_202b. In other words, in a top view, the entire perimeter of the semiconductor layer 403_21 becomes the channel formation region. In this case, for example, the channel width W of the transistor FL2_403 is determined by the length of the outer perimeter of the semiconductor layer 403_21. That is, the channel width W of the transistor FL2_403 can be said to be determined by the size of the maximum width (or diameter if the opening FL2_490 is circular in a top view) of the aperture FL2_490. Figure 30D shows the maximum width D of the aperture FL2_490 with a solid double arrow. Figure 30D shows the channel width W of the transistor FL2_403 with a solid double arrow. By increasing the size of the maximum width D of the aperture FL2_490, the channel width per unit area can be increased, and the on-current can be increased.

[0303] When forming the aperture FL2_490 using photolithography, the maximum width D of the aperture FL2_490 is greater than or equal to the minimum exposure dimension of the exposure apparatus. Furthermore, the maximum width D of the aperture FL2_490 is determined by the film thickness of the semiconductor layer 403_21, the insulating layer FL2_202b, and the conductive layer 403_27 provided in the aperture FL2_490. The maximum width D of the aperture FL2_490 is, for example, 5 nm or more, 10 nm or more, or 20 nm or more, and preferably 100 nm or less, 60 nm or less, 50 nm or less, 40 nm or less, or 30 nm or less. Note that if the aperture FL2_490 is circular in a top view, the maximum width D of the aperture FL2_490 corresponds to the diameter of the aperture FL2_490, and the channel width W can be calculated as "D × π".

[0304] The configuration of the transistor FL2_403 shown here can also be applied to other configuration examples.

[0305] The conductive layer 403_25a is provided on the insulating layer FL2_202a. The conductive layer 403_25a functions as either the source electrode or the drain electrode.

[0306] The insulating layer FL2_209 is provided on the insulating layer FL2_202a and the conductive layer 403_25a. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidized nitride insulating films, and nitride oxide insulating films can be used for the insulating layer FL2_209. Specifically, one or more silicon oxide films, silicon oxidized nitride films, aluminum oxide films, silicon nitride films, and silicon nitride oxide films can be used for the insulating layer FL2_209.

[0307] The conductive layer 403_25b is provided on the insulating layer FL2_209. Furthermore, the conductive layer 403_25b and the insulating layer FL2_209 are provided with an opening FL2_490 that reaches the conductive layer 403_25a. The conductive layer 403_25b functions as the other of the source electrode and drain electrode.

[0308] The semiconductor layer 403_21 is in contact with the side surface of the insulating layer FL2_209, the side surface of the conductive layer 403_25b, and the upper surface of the conductive layer 403_25a inside the opening FL2_490. The region of the semiconductor layer 403_21 in contact with the conductive layer 403_25a functions as one of the source region and drain region, while the region in contact with the conductive layer 403_25b functions as the other of the source region and drain region. In the semiconductor layer 403_21, the channel formation region is located between the source region and the drain region. For example, an oxide semiconductor film can be used for the semiconductor layer 403_21.

[0309] The insulating layer FL2_202b is provided on the semiconductor layer 403_21. The insulating layer FL2_202b functions as a gate insulating layer.

[0310] The conductive layer 403_27 is in contact with the insulating layer FL2_202b and has a region that overlaps with the semiconductor layer 403_21. At least a portion of the conductive layer 403_27 is embedded inside the opening FL2_490. The conductive layer 403_27 functions as a gate electrode.

[0311] The insulating layer FL2_203a is provided on the insulating layer FL2_202b. The insulating layer FL2_203a functions as an interlayer insulating layer.

[0312] The insulating layer FL2_203b covers the upper surface of the conductive layer 403_27 and the upper surface of the insulating layer FL2_203a. The insulating layer FL2_203b has the function of suppressing the diffusion of impurities (e.g., water and hydrogen) that impair the reliability of transistor FL2_403 into transistor FL2_403. Note that an insulating film similar to that of the insulating layer FL2_202a can be used for the insulating layer FL2_203b.

[0313] The insulating layer FL2_204 covers the insulating layer FL2_203b. The insulating layer FL2_204 functions as an interlayer insulating layer.

[0314] Furthermore, the functional layer FL2 includes a conductive layer FL2_303. The conductive layer FL2_303 is embedded in the insulating layers FL2_203a, FL2_203b, and FL2_204. The conductive layer FL2_303 connects the conductive layer 403_25b and the conductive layer FL2_301 (see Figure 29). In other words, the conductive layer FL2_303 connects the transistor FL2_403 to the capacitor FL2_408.

[0315] For example, a pixel circuit can be constructed using the transistor FL2_403.

[0316] The conductive layer FL2_303 comprises conductive layer FL2_303a and conductive layer FL2_303b. Conductive layer FL2_303a covers the sides of the openings of insulating layers FL2_204, FL2_203b, FL2_203a, and FL2_208, and a portion of the upper surface of conductive layer 403_25b. Conductive layer FL2_303b is in contact with the upper surface of conductive layer FL2_303a. Conductive material that does not readily allow hydrogen and oxygen to diffuse can be suitably used for conductive layer FL2_303a.

[0317] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0318] (Embodiment 3) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 31A to 33G.

[0319] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0320] Examples of electronic devices include television sets, desktop or notebook computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0321] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0322] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth. Furthermore, there are no particular limitations on the aspect ratio of the display device according to one embodiment of the present invention. For example, the display device can support various aspect ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0323] The electronic device of this embodiment may also be configured to include sensors (including functions for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0324] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0325] Figures 31A to 31D illustrate an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device that has the function to display at least one of the following content types, such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0326] The electronic device 8700A shown in Figure 31A and the electronic device 8700B shown in Figure 31B each include a pair of display panels 8751, a pair of housings 8721, a communication unit (not shown), a pair of mounting units 8723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 8753, a frame 8757, and a pair of nose pads 8758. Note that the display panel 8751 is omitted in Figure 31B.

[0327] A display device according to one embodiment of the present invention can be applied to the display panel 8751. Therefore, an electronic device capable of displaying extremely high resolution can be created.

[0328] Electronic devices 8700A and 8700B can each project an image displayed on a display panel 8751 onto the display area 8756 of an optical element 8753. Because the optical element 8753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 8753. Therefore, electronic devices 8700A and 8700B are electronic devices capable of AR display.

[0329] Electronic devices 8700A and 8700B can be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 8700A and 8700B can each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 8756.

[0330] The communications unit has a wireless communication device, which can supply video signals and other signals. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, a connector may be provided to which a cable for supplying video signals and power potential can be connected.

[0331] Electronic devices 8700A and 8700B are equipped with batteries (not shown) that can be charged wirelessly, wired, or both.

[0332] A touch sensor module can be installed in the housing 8721. The touch sensor module has the function of detecting when the outer surface of the housing 8721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by installing a touch sensor module in each of the two housings 8721, the range of operations can be expanded.

[0333] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical sensors can be used. In particular, it is preferable to apply a capacitive or optical sensor to the touch sensor module.

[0334] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light-receiving device. The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0335] The electronic device 8800A shown in Figure 31C and the electronic device 8800B shown in Figure 31D each include a pair of display units 8820, a housing 8821, a communication unit 8822, a pair of mounting units 8823, a control unit 8824, a pair of imaging units 8825, and a pair of lenses 8832. Note that the display unit 8820, communication unit 8822, and imaging unit 8825 are omitted in Figure 31D.

[0336] A display device according to one embodiment of the present invention can be applied to the display unit 8820. Therefore, an electronic device capable of displaying extremely high resolution can be created. This allows the user to experience a high level of immersion.

[0337] The display unit 8820 is located inside the housing 8821 in a position where it can be seen through the lens 8832. Furthermore, by displaying different images on a pair of display units 8820, a three-dimensional display using parallax can also be performed.

[0338] Electronic devices 8800A and 8800B can each be described as electronic devices for VR. A user wearing either electronic device 8800A or electronic device 8800B can view the image displayed on the display unit 8820 through the lens 8832.

[0339] It is preferable that electronic devices 8800A and 8800B each have a mechanism that allows adjustment of the left and right positions of the lens 8832 and the display unit 8820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 8832 and the display unit 8820.

[0340] The attachment portion 8823 allows the user to attach the electronic device 8800A or 8800B to their head. While the attachment portion 8823 is exemplified as having a shape similar to the temples of eyeglasses in Figure 31C and other figures, it is not limited to this. The attachment portion 8823 only needs to be wearable by the user; for example, it can be in the shape of a helmet or a band.

[0341] The imaging unit 8825 has the function of acquiring external information. The data acquired by the imaging unit 8825 can be output to the display unit 8820. An image sensor can be used in the imaging unit 8825. In addition, multiple cameras can be provided to support multiple angles of view, such as telephoto and wide-angle.

[0342] Although an example with an imaging unit 8825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 8825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0343] The electronic device 8800A may also have a vibration mechanism that functions as bone conduction earphones. For example, the configuration having this vibration mechanism can be applied to one or more of the display unit 8820, the housing 8821, and the mounting unit 8823. This allows users to enjoy video and audio simply by wearing the electronic device 8800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0344] Electronic devices 8800A and 8800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0345] An electronic device according to one aspect of the present invention may also have a function for wireless communication with an earphone 8750. The earphone 8750 has a communication unit (not shown) and has a wireless communication function. The earphone 8750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 8700A shown in Figure 31A has a function for transmitting information to the earphone 8750 through its wireless communication function. Also, for example, the electronic device 8800A shown in Figure 31C has a function for transmitting information to the earphone 8750 through its wireless communication function.

[0346] The electronic device can be configured to include an earphone section. The electronic device 8700B shown in Figure 31B has an earphone section 8727. For example, the earphone section 8727 and the control unit can be connected to each other by a wire. Some of the wiring connecting the earphone section 8727 and the control unit may be located inside the housing 8721 or the mounting section 8723.

[0347] Similarly, the electronic device 8800B shown in Figure 31D has an earphone unit 8827. For example, the earphone unit 8827 and the control unit 8824 can be connected to each other by wire. Part of the wiring connecting the earphone unit 8827 and the control unit 8824 may be located inside the housing 8821 or the mounting unit 8823. Also, the earphone unit 8827 and the mounting unit 8823 may have magnets. This allows the earphone unit 8827 to be fixed to the mounting unit 8823 by magnetic force, which is preferable as it facilitates storage.

[0348] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a sound-collecting device such as a microphone can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0349] Thus, in one embodiment of the present invention, the electronic device is preferably of the glasses type (electronic device 8700A, electronic device 8700B, etc.) or the goggle type (electronic device 8800A, electronic device 8800B, etc.).

[0350] An electronic device according to one aspect of the present invention can transmit information to earphones by wire or wireless means.

[0351] The electronic device 6500 shown in Figure 32A is a portable information terminal that can be used as a smartphone.

[0352] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0353] A display device according to one embodiment of the present invention can be applied to the display unit 6502.

[0354] Figure 32B is a schematic cross-sectional view of the housing 6501 including the end on the microphone 6506 side.

[0355] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0356] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0357] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0358] A display device according to one embodiment of the present invention can be applied to the display panel 6511. In particular, by using a resin film for the substrate of the display panel 6511, an extremely lightweight electronic device can be realized. Furthermore, because the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel section, an electronic device with a narrow bezel can be realized.

[0359] Figure 32C shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown to be supported by a stand 7103.

[0360] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0361] The television device 7100 shown in Figure 32C can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0362] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0363] Figure 32D shows an example of a notebook computer. The computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0364] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0365] Figures 32E and 32F show examples of digital signage.

[0366] The digital signage 7300 shown in Figure 32E includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switches), connection terminals, various sensors, a microphone, etc.

[0367] Figure 32F shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0368] In Figures 32E and 32F, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0369] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0370] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0371] As shown in Figures 32E and 32F, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0372] The digital signage 7300 or digital signage 7400 can also be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0373] The electronic device shown in Figures 33A to 33G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, a sensor 9007 (including a function to detect, detect, or measure force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0374] In Figures 33A to 33G, a display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0375] The electronic devices shown in Figures 33A to 33G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them on a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0376] Details of the electronic equipment shown in Figures 33A to 33G will be explained below.

[0377] Figure 33A is a perspective view showing a personal digital information terminal (PDI) 9101. The PDI 9101 can be used, for example, as a smartphone. The PDI 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. Furthermore, the PDI 9101 can display text and image information on multiple surfaces. Figure 33A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, and phone calls, the subject of an email or SNS message, the sender's name, date and time, battery level, and signal strength. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0378] Figure 33B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0379] Figure 33C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000, operation keys 9005 as buttons for operation on the side of the housing 9000, and connection terminals 9006 on the bottom.

[0380] Figure 33D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. The charging operation can be configured to be performed by wireless power supply.

[0381] Figures 33E to 33G are perspective views showing a foldable portable information terminal 9201. Figure 33E shows the portable information terminal 9201 in an unfolded state, Figure 33G shows it in a folded state, and Figure 33F shows a perspective view of the state in between, transitioning from one of Figures 33E or 33G to the other. The portable information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0382] This embodiment can be combined with other embodiments as appropriate.

[0383] CD10: Center-to-center distance, CD20: Center-to-center distance, DMF_A: Dielectric multilayer film, DMF_BU: Dielectric multilayer film, DMF_G: Dielectric multilayer film, ELA: Light, ELB: Light, ELBU: Light, ELG: Light, ELR: Light, FL_408: Capacitance, FL_411: Bump, FL_412: Adhesive layer, FP: Layer, FP_130: Substrate, FP_406B: Light-emitting device, FP_406G: Light-emitting device, FP_406R: Light-emitting device, FP_421: Protective layer, FP_422: Layer, IntCR: Layer, IntCG: Layer, REFG: Layer, REFR: Layer, 40: Pixel, 71: Sub-pixel ,74: Pixel array, 75: Circuit, 76: Circuit, 77: Layer, 78: Layer, 79: Layer, 103G: Unit, 103R: Unit, 103RG: Gap, 104G: Layer, 104R: Layer, 104RG: Gap, 105: Layer, 280: Display module, 281: Display section, 282: Circuit section, 283: Pixel circuit section, 283a: Pixel circuit, 284: Pixel section, 284a: Pixel, 285: Terminal section, 285_1: Terminal section, 285_4: Terminal section, 286: Wiring section, 290: FPC, 291: Substrate, 292: Substrate, 401_11: Conductive layer, 401_12: Low resistance region, 401_13: Insulating layer, 401_14: Insulating layer, 402_21: Semiconductor layer, 402_23: Insulating layer, 402_24: Conductive layer, 402_25: Conductive layer, 402_27: Conductive layer, 403_21: Semiconductor layer, 403_25a: Conductive layer, 403_25b: Conductive layer, 403_27: Conductive layer, 510: Layer, 510M: Eye structure, 512: Wiring layer, 512A: Wiring layer, 512B: Wiring layer, 520: Layer, 520A: Layer, 520B: Layer, 520M: Eye structure, 521: Insulating layer, 552: Conductive layer, 529_1: Layer, 529_2: Layer, 550BU: Light-emitting device, 550G: Light-emitting device, 550 R: Light-emitting device, 551G: Electrode, 551R: Electrode, 551RG: Gap, 700: Display device, 700A: Display device, 700B: Display device, 700C: Display device, 700D: Display device, 700E: Display device, 731: Display area, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 8700A: Electronic equipment, 8700B: Electronic equipment, 8721: Enclosure, 8723: Mounting unit, 8727: Earphone unit, 8750: Earphone, 8751: Display panel, 8753: Optical component, 8756: Display area 8757: Frame, 8758: Nose pad, 8800A: Electronic equipment, 8800B: Electronic equipment, 8820: Display unit, 8821: Housing, 8822: Communication unit, 8823: Mounting unit, 8824: Control unit, 8825: Imaging unit, 8827: Earphone unit, 8832: Lens, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Personal digital assistant, 9102: Personal digital assistant, 9103: Tablet terminal, 9200: Personal digital assistant, 9201: Personal digital assistant,

Claims

Having a first pixel and a second pixel, The first pixel comprises a first light-emitting device and a first pixel circuit, The first light-emitting device is connected to the first pixel circuit, The second pixel is adjacent to the first pixel, The second pixel comprises a second light-emitting device and a second pixel circuit. The second light-emitting device is connected to the second pixel circuit, The second light-emitting device has a first center-to-center distance from the first light-emitting device, The second pixel circuit has a second center-to-center distance from the first pixel circuit, A display device in which the second center-to-center distance is greater than the first center-to-center distance. 　 Display area and, The first layer and, It has a second layer, The display area comprises the first pixel, the second pixel, the third pixel, and the fourth pixel, The third pixel is positioned at the periphery of the display area, compared to the first pixel. The third pixel comprises a third light-emitting device and a third pixel circuit. The third light-emitting device is connected to the third pixel circuit. The fourth pixel is adjacent to the third pixel, The fourth pixel comprises a fourth light-emitting device and a fourth pixel circuit, The fourth light-emitting device is connected to the fourth pixel circuit, The first layer comprises the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device. The fourth light-emitting device has a third center-to-center distance from the third light-emitting device, The second layer comprises the first pixel circuit, the second pixel circuit, the third pixel circuit, and the fourth pixel circuit. The fourth pixel circuit has a fourth center-to-center distance from the third pixel circuit, The display device according to claim 1, wherein the fourth center-to-center distance is smaller than the third center-to-center distance. 　 The display device according to claim 2, wherein the third center-to-center distance is greater than the first center-to-center distance. 　 The display device according to claim 3, wherein the fourth center-to-center distance is equal to the second center-to-center distance. 　 The display device according to claim 3, wherein the first layer includes an area that overlaps with the second layer. 　 The first wiring layer and It has a second wiring layer, The first wiring layer is sandwiched between the first layer and the second wiring layer. The first wiring layer includes the first wiring, The first wiring connects the first light-emitting device and the first pixel circuit. The second wiring layer is sandwiched between the first wiring layer and the second layer. The second wiring layer includes the second wiring, The display device according to claim 2, wherein the second wiring connects the second light-emitting device and the second pixel circuit. 　 The first set of pixels, A second set of pixels, The third wiring layer, It has a fourth wiring layer, The first set of pixels comprises a fifth pixel and a sixth pixel, The fifth pixel comprises the first light-emitting device, The sixth pixel comprises a fifth light-emitting device, The fifth light-emitting device has a different light-emitting color from the first light-emitting device. The second set of pixels comprises a seventh pixel and an eighth pixel, The seventh pixel comprises the third light-emitting device, The eighth pixel comprises a sixth light-emitting device, The third light-emitting device has the same light-emitting color as the first light-emitting device. The sixth light-emitting device has the same light-emitting color as the fifth light-emitting device. The third wiring layer includes the first wiring and the third wiring, The first wiring is connected to the first light-emitting device. The third wiring is connected to the third light-emitting device. The fourth wiring layer overlaps with the third wiring layer. The fourth wiring layer includes a fourth wiring and a fifth wiring, The fourth wiring is connected to the fifth light-emitting device, The display device according to claim 2, wherein the fifth wiring is connected to the sixth light-emitting device. 　 The first layer comprises a third layer and a fourth layer, The third layer comprises the first light-emitting device and the third light-emitting device, The third layer has the third wiring layer sandwiched between it and the fourth layer. The fourth layer comprises the fifth light-emitting device and the sixth light-emitting device, The fourth layer is sandwiched between the third wiring layer and the fourth wiring layer. The display device according to claim 7, wherein the fourth layer sandwiches the fourth wiring layer between itself and the second layer. 　 The first layer comprises a third layer and a fourth layer, The fourth layer is sandwiched between the third layer and the second layer. The fourth layer has the fourth wiring layer sandwiched between it and the second layer. The fourth layer comprises the fifth light-emitting device, The third layer has the third wiring layer sandwiched between it and the fourth layer. The third layer comprises the first light-emitting device, The first light-emitting device overlaps with the fifth light-emitting device. The first light-emitting device comprises a first electrode, a light-emitting unit, and a second electrode. The light-emitting unit is sandwiched between the first electrode and the second electrode, The display device according to claim 7, wherein both the first electrode and the second electrode are light-transmitting. 　 Having a dielectric multilayer film, The dielectric multilayer film is sandwiched between the first light-emitting device and the fifth light-emitting device. The dielectric multilayer film reflects the light emitted by the first light-emitting device and transmits the light emitted by the fifth light-emitting device. The display device according to claim 9, wherein the fifth light-emitting device includes a material that absorbs light emitted by the first light-emitting device and emits light. 　 A display device according to any one of claims 1 to 10, A display module having at least one of a connector and an integrated circuit. 　 A display device according to any one of claims 1 to 10, An electronic device having at least one of a battery, a camera, a speaker, and a microphone.

Images