Highly integrated power module system

Abstract

The present invention relates to a highly integrated power module system, comprising a PCB and at least one plastic-packaged single transistor. The plastic-packaged single transistor is embedded in the PCB. Wiring terminal groups are provided on the surface of the PCB; and wiring terminals in each wiring terminal group are respectively electrically connected to corresponding pins in the corresponding plastic-packaged single transistor. The present invention has the following advantages: having high power density, being capable of supporting high voltage and high current, and realizing parallel connection of multiple dies; having high expansibility, being capable of covering industrial and automotive-grade power module ranges; reducing the costs; achieving a high integration level, being capable of integrating active and passive devices; achieving very low parasitic inductance, reaching approximately 1 nH, and reducing the loss; and further reducing the thermal resistance.

Description

A highly integrated power module system Technical Field

[0001] This invention relates to the field of integrated circuit manufacturing technology, and in particular to a highly integrated power module system. Background Technology

[0002] With the development trend of IGBT / SiC power modules towards high frequency, high speed, high voltage, high current, high temperature, high heat dissipation, and high reliability, IGBT / SiC power module packaging technology based on packaging structure and packaging materials is also constantly being updated and upgraded. Compared with the packaging structure, the characteristics of IGBT / SiC power module packaging materials are mainly high heat dissipation and high reliability requirements for ceramic copper-clad substrates, heat sinks, adhesive materials, interconnect materials, and potting materials, in order to meet the application needs of IGBT / SiC power modules.

[0003] Integration and miniaturization: As technology advances, the requirements for device size and integration are becoming increasingly stringent. In the future, IGBT technology will develop towards miniaturization and high integration, or be gradually replaced by SiC, in order to achieve more compact circuit design and more efficient energy conversion.

[0004] The summary reveals the following shortcomings:

[0005] 1. Existing modules rely on copper wires, aluminum wires, clips, etc. for internal connections, which have long paths and can cause noise issues. If copper wires are used, DTS (Digital Transmission System) is also required for wire bonding and buffering, which is costly.

[0006] 2. The module has a complex manufacturing process, and some manufacturing defects may occur that are not easily detected, which may pose a potential reliability risk.

[0007] 3. Low integration: The modules, components, and control boards in the system are all soldered separately in their respective positions, resulting in a large footprint, high cost, and high reliability risk. Summary of the Invention

[0008] The purpose of this invention is to provide a highly integrated power module system.

[0009] Includes a PCB board and at least one plastic-encapsulated single tube;

[0010] The encapsulated single tube is embedded within the PCB board;

[0011] The PCB board has terminal blocks on its surface, and the terminals in each terminal block are electrically connected to the corresponding pins in the corresponding plastic-encapsulated tube.

[0012] Furthermore, it also includes a heat sink, wherein a thermally conductive insulating layer is provided on the lower surface of the PCB board, and the heat sink is attached to the lower surface of the PCB board through the thermally conductive insulating layer.

[0013] Specifically, the molded single tube includes at least one chip, a metal conductive layer, a lead frame, and a molding compound;

[0014] The chip is disposed on the lead frame, and both sides of the chip are provided with a metal conductive medium;

[0015] The S and G terminals on the chip are electrically connected to the corresponding pins on the lead frame via a metal conductive medium.

[0016] The drain electrode on the chip is electrically connected to the metal conductive layer through a metal conductive medium.

[0017] The molding compound encapsulates the chip, the metal conductive layer, and the lead frame, with the surfaces of the metal conductive layer and the lead frame exposed outside the molding compound.

[0018] Specifically, the molded single tube includes at least one chip, a lead frame, and a molding compound;

[0019] The chip is disposed on the lead frame, and a metal conductive medium is provided on the front side of the chip;

[0020] The S and G terminals on the front side of the chip are electrically connected to the corresponding pins on the lead frame via a metal conductive medium.

[0021] The molding compound encapsulates the chip and the lead frame, with the back of the chip and the surface of the lead frame both exposed outside the molding compound.

[0022] Specifically, the plastic-encapsulated single tube is mounted upright or upside down within the PCB board.

[0023] Furthermore, each pin on the PCB board has a channel hole filled with a conductive medium, and the G and S pins on the plastic-encapsulated single tube are electrically connected to the corresponding terminals on the PCB board through the conductive medium.

[0024] An insulating layer is provided between the channel hole and the copper layer in the PCB board, and the conductive medium in the channel hole is separated from the copper layer in the PCB board by the insulating layer.

[0025] Furthermore, the outlet of the channel hole corresponding to the D pole of the plastic-encapsulated single tube is directly attached to the thermally conductive insulating layer.

[0026] Furthermore, the channel hole corresponding to the D pole of the plastic-encapsulated single tube extends to the surface of the PCB board, and the terminal group corresponding to the plastic-encapsulated single tube also includes a D pole terminal. The D pole of the plastic-encapsulated single tube is electrically connected to the D pole terminal through the conductive medium in the channel hole.

[0027] Furthermore, it also includes a motherboard, which is electrically connected to the terminals in all of the said terminal blocks.

[0028] Optionally, a gap is left between the motherboard and the PCB board.

[0029] Optionally, the motherboard is mounted on the upper surface of the PCB board and is located directly above the plastic-encapsulated single tube.

[0030] Optionally, the motherboard is mounted on one side of the upper surface of the PCB board, and there is no motherboard covering directly above the plastic-encapsulated single tube.

[0031] Furthermore, the PCB board is also provided with active components and / or passive components.

[0032] Optionally, the chip is one or more power chips.

[0033] Specifically, the chip is an IGBT power chip and / or a SiC power chip.

[0034] Specifically, the PCB board has a structure of two or more layers.

[0035] Furthermore, the PCB board has a 6-layer structure.

[0036] The highly integrated power module system of the present invention has the following advantages compared with the prior art:

[0037] (1) High power density, which can cover high voltage and high current, and multiple dies can be connected in parallel; strong scalability, which can cover the range of industrial and automotive power modules; cost can be reduced; high integration, which can integrate active and passive devices; very low parasitic inductance, which can be reduced to about 1nH; and the loss can be reduced; at the same time, the thermal resistance can be further reduced.

[0038] (2) The above-mentioned changes in the power module structure result in a shorter process flow, fewer material varieties, and a shorter production cycle;

[0039] (3) The copper plating process of drilling in the PCB board is adopted to achieve the shortest path, without the need for wire bonding and DTS process, and the cost is low.

[0040] (4) By directly coupling the structure through interconnection technology, the problem of stray inductance caused by long wires is eliminated, which can significantly improve electrical performance and possibilities;

[0041] (5) High integration. It can be connected to passive and main components by bringing out corresponding pins through interconnection technology, or it can be connected to the motherboard to become one unit, which greatly reduces the cost.

[0042] (6) Good thermal performance: The copper plating layer inside the PCB is directly bonded to the chip GSD and achieves double-sided heat dissipation, resulting in strong heat dissipation capacity; Good electrical performance: No internal wiring is required, the copper layer connects the conductors, the Rdson on-resistance is small, the total inductance is small, and the electrical performance is excellent; High power density: The PCB is embedded in the design, and the double-sided heat dissipation single tube is integrated in the PCB, resulting in higher integration, higher power density, and more flexible wiring; Good reliability: Based on the high power density of this module, the module is smaller in size, has higher mechanical strength and less internal stress, and has better reliability. Attached Figure Description

[0043] Figure 1 is a schematic diagram of a high-integration power module system according to Embodiment 1;

[0044] Figure 2 is a schematic diagram of the structure of the plastic-sealed single tube in Example 1;

[0045] Figure 3 is a schematic diagram of the structure of the plastic-sealed single tube in Example 1;

[0046] Figure 4 is a structural schematic diagram of a high-integration power module system according to Embodiment 2;

[0047] Figure 5 is a structural schematic diagram of a high-integration power module system according to Embodiment 3;

[0048] Figure 6 is a structural schematic diagram of a high-integration power module system according to Embodiment 4;

[0049] Figure 7 is a structural schematic diagram of a high-integration power module system according to Embodiment 5;

[0050] Figure 8 is a structural schematic diagram of a high-integration power module system according to Embodiment 6;

[0051] Figure 9 is a structural schematic diagram of a high-integration power module system according to Embodiment 7;

[0052] Figure 10 is a structural schematic diagram of a high-integration power module system according to Embodiment 8;

[0053] Figure 11 is a structural schematic diagram of a high-integration power module system according to Embodiment 9;

[0054] Figure 12 is a schematic diagram of a high-integration power module system according to Embodiment 10;

[0055] Figure 13 is a schematic diagram of a high-integration power module system according to Embodiment 11;

[0056] Figure 14 is a schematic diagram of the structure of the plastic-sealed single tube in Example 12;

[0057] Figure 15 is a schematic diagram of the encapsulated single tube without a metal conductive layer in Example 12;

[0058] Figure 16 is a structural schematic diagram of a high-integration power module system according to Embodiment 13;

[0059] Figure 17 is a schematic diagram of a highly integrated power module system according to Embodiment 14. Embodiments of the present invention

[0060] The specific embodiments of this invention will be further described in detail below with reference to the accompanying drawings. Example 1.

[0061] In this embodiment, as shown in FIG1, a highly integrated power module system includes a PCB board 1, a plastic-encapsulated single tube 2 and a heat sink 3; the number of plastic-encapsulated single tubes 2 is one.

[0062] The encapsulated single tube 2 is embedded in the PCB board 1;

[0063] The surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0064] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0065] In this embodiment, as shown in FIG2, the plastic-encapsulated single tube 2 includes a chip 6, a metal conductive layer 7, a lead frame 8, and a plastic encapsulation body 9;

[0066] The chip 6 is disposed on the lead frame 8, and both sides of the chip 6 are provided with a metal conductive medium 10;

[0067] The S and G terminals on the chip 6 are electrically connected to the corresponding pins on the lead frame 8 through the metal conductive medium 10.

[0068] The drain electrode on the chip 6 is electrically connected to the metal conductive layer 7 through the metal conductive medium 10.

[0069] The molding compound 9 encapsulates the chip 6, the metal conductive layer 7, and the lead frame 8, with the surfaces of the metal conductive layer 7 and the lead frame 8 exposed outside the molding compound 9.

[0070] Alternatively, the encapsulated single tube may not have the metal conductive layer 7, as shown in Figure 3;

[0071] The chip 6 is disposed on the lead frame 8, and a metal conductive medium 10 is provided on the front side of the chip 6;

[0072] The S and G terminals on the front side of the chip 6 are electrically connected to the corresponding pins on the lead frame 8 through the metal conductive medium 10.

[0073] The molding compound 9 encapsulates the chip 6 and the lead frame 8, with the back of the chip 6 and the surface of the lead frame 8 both exposed outside the molding compound 9.

[0074] In this embodiment, the plastic-encapsulated single tube is mounted upright within the PCB board.

[0075] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube 2 on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals on the PCB board 1 through the conductive medium 12.

[0076] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0077] In this embodiment, the outlet of the channel hole corresponding to the D pole of the plastic-encapsulated single tube 2 is directly attached to the thermally conductive insulating layer 5.

[0078] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0079] In this embodiment, as shown in FIG1, the PCB board 1 has a 6-layer structure (the insulating layer 15 and the copper layer 13 in the PCB board are a total of 6 layers, and are arranged in sequence at intervals).

[0080] The plastic-encapsulated single tube is pre-embedded in the PCB board, and then holes are drilled at specific locations using laser or other methods. Copper is then poured into the holes to provide electrical connection.

[0081] In a 3D structure, the shortest path can be taken, and the copper plating is surrounded by insulating material, which effectively wraps the traces, achieving the goals of low inductance, excellent electrical performance, and high reliability.

[0082] The PCB board and motherboard have similar materials and processes, and can be used as a whole product. Different components can be connected through the free leads in the PCB, which greatly improves the integration of the product. Example 2.

[0083] As shown in Figure 4, a highly integrated power module system includes a PCB board 1, a plastic-encapsulated single tube 2, and a heat sink 3.

[0084] The encapsulated single tube 2 is embedded in the PCB board 1;

[0085] The surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0086] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0087] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0088] Optionally, the plastic-encapsulated single tube 2 is mounted in the PCB board 1.

[0089] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube 2 on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals on the PCB board 1 through the conductive medium 12.

[0090] An insulating layer 14 is provided between the channel hole and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0091] The channel hole 11 corresponding to the D pole of the plastic-encapsulated single tube 2 extends to the surface of the PCB board 1. The terminal group corresponding to the plastic-encapsulated single tube 2 also includes a D pole terminal. The D pole of the plastic-encapsulated single tube 2 is electrically connected to the D pole terminal through the conductive medium 12 in the channel hole 11.

[0092] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0093] In this embodiment, the PCB board 1 has a 6-layer structure (the insulating layer 15 and the copper layer 13 in the PCB board are a total of 6 layers, and are arranged in sequence at intervals). Example 3.

[0094] As shown in Figure 5, a highly integrated power module system is described.

[0095] Includes PCB board 1, two plastic-encapsulated single tubes 2 and heat sink 3;

[0096] The encapsulated single tube 2 is embedded in the PCB board 1;

[0097] The surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0098] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0099] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0100] In this embodiment, the plastic-encapsulated single tube 2 is embedded in the PCB board 1.

[0101] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube 2 on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube are electrically connected to the corresponding terminals on the PCB board through the conductive medium.

[0102] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0103] In this embodiment, the outlet of the channel hole 11 corresponding to the D pole of the plastic-encapsulated single tube 2 is directly attached to the thermally conductive insulating layer 5.

[0104] In this embodiment, the chip is an IGBT power chip and / or a SiC power chip, which is configured according to actual needs.

[0105] In this embodiment, the PCB board 1 has a 6-layer structure (the insulating layer 15 and the copper layer 13 in the PCB board 1 are a total of 6 layers, and are arranged in sequence at intervals). Example 4.

[0106] As shown in Figure 6, a highly integrated power module system is described.

[0107] Includes PCB board 1, two plastic-encapsulated single tubes 2 and heat sink 3;

[0108] The encapsulated single tube 2 is embedded in the PCB board 1;

[0109] The upper surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0110] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0111] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0112] In this embodiment, the plastic-encapsulated single tube 2 is embedded in the PCB board 1.

[0113] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube 2 on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals 4 on the PCB board 1 through the conductive medium 12.

[0114] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0115] In this embodiment, the channel hole 11 corresponding to the D pole of the plastic-encapsulated single tube 2 extends to the surface of the PCB board 1, and the terminal group corresponding to the plastic-encapsulated single tube 2 also includes a D pole terminal. The D pole of the plastic-encapsulated single tube 2 is electrically connected to the D pole terminal through the conductive medium 12 in the channel hole 11.

[0116] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0117] In this embodiment, the PCB board 1 has a 6-layer structure (the insulating layer 15 and the copper layer 13 in the PCB board 1 are a total of 6 layers, and are arranged alternately). Example 5.

[0118] As shown in Figure 7, a highly integrated power module system is described.

[0119] Includes PCB board 1, a plastic-encapsulated single tube 2, and heat sink 3;

[0120] The encapsulated single tube 2 is embedded in the PCB board 1;

[0121] The upper surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0122] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0123] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0124] In this embodiment, as shown in FIG7, the plastic-encapsulated single tube 2 is flip-mounted and embedded in the PCB board 1.

[0125] In this embodiment, a channel hole 11 is provided on the PCB board 1 at the pins corresponding to the plastic-encapsulated single tube 2. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals 4 on the PCB board 1 through the conductive medium 12.

[0126] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0127] The channel hole 11 corresponding to the D pole of the plastic-encapsulated single tube 2 extends to the surface of the PCB board 1. The terminal group corresponding to the plastic-encapsulated single tube 2 also includes a D pole terminal. The D pole of the plastic-encapsulated single tube is electrically connected to the D pole terminal through the conductive medium 12 in the channel hole 11.

[0128] In this embodiment, the chip is an IGBT power chip and / or a SiC power chip.

[0129] In this embodiment, the PCB board 1 has a 6-layer structure (the insulating layer 15 and the copper layer 13 in the PCB board 1 are a total of 6 layers, and are arranged in sequence at intervals). Example 6.

[0130] As shown in Figure 8, a highly integrated power module system is described.

[0131] Includes PCB board 1, two plastic-encapsulated single tubes 2 and heat sink 3;

[0132] The encapsulated single tube 2 is embedded in the PCB board 1;

[0133] The upper surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0134] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0135] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0136] In this embodiment, as shown in FIG8, one plastic-encapsulated single tube is upright embedded in the PCB board 1, and the other plastic-encapsulated single tube is inverted embedded in the PCB board 1.

[0137] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube 2 on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals on the PCB board 1 through the conductive medium 12.

[0138] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0139] In this embodiment, the channel hole 11 corresponding to the D pole of the plastic-encapsulated single tube 2 extends to the surface of the PCB board 1, and the terminal group corresponding to the plastic-encapsulated single tube 2 also includes a D pole terminal. The D pole of the plastic-encapsulated single tube is electrically connected to the D pole terminal through the conductive medium 12 in the channel hole 11.

[0140] In this embodiment, in the inverted encapsulated single tube, the outlet of the channel hole 11 corresponding to the D pole of the encapsulated single tube is directly attached to the thermally conductive insulating layer 5.

[0141] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0142] In this embodiment, the PCB board 1 has a 6-layer structure. Example 7.

[0143] As shown in Figure 9, a highly integrated power module system is described.

[0144] Includes PCB board 1, two plastic-encapsulated single tubes 2 and heat sink 3;

[0145] The encapsulated single tube 2 is embedded in the PCB board 1;

[0146] The upper surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0147] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0148] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0149] In this embodiment, as shown in FIG9, one plastic-encapsulated single tube is upright embedded in the PCB board 1, and the other plastic-encapsulated single tube is inverted embedded in the PCB board 1.

[0150] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals 4 on the PCB board 1 through the conductive medium 12.

[0151] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0152] In this embodiment, in both upright and inverted plastic-encapsulated single tubes, the channel hole 11 corresponding to the D pole of the plastic-encapsulated single tube 2 extends to the surface of the PCB board 1. The terminal group corresponding to the plastic-encapsulated single tube 2 also includes a D pole terminal. The D pole of the plastic-encapsulated single tube is electrically connected to the D pole terminal through the conductive medium in the channel hole.

[0153] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0154] In this embodiment, the PCB board 1 has a 6-layer structure. Example 8.

[0155] Figure 10 shows a highly integrated power module system.

[0156] Includes PCB board 1, two plastic-encapsulated single tubes 2 and heat sink 3;

[0157] The encapsulated single tube 2 is embedded in the PCB board 1;

[0158] The upper surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0159] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0160] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0161] In this embodiment, as shown in FIG10, one plastic-encapsulated single tube is upright embedded in the PCB board 1, and the other plastic-encapsulated single tube is inverted embedded in the PCB board 1.

[0162] The PCB board 1 has a channel hole 11 at the pin of the plastic-encapsulated single tube 2. The channel hole 11 is filled with a conductive medium 12. The G and S poles of the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals on the PCB board 1 through the conductive medium.

[0163] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0164] In this embodiment, in the inverted encapsulated single tube, the outlet of the channel hole 11 corresponding to the D pole of the encapsulated single tube is directly attached to the thermally conductive insulating layer 5.

[0165] In this embodiment, in the flip-chip encapsulated single tube, the channel hole corresponding to the D pole of the encapsulated single tube extends to the surface of the PCB board, and the terminal group corresponding to the encapsulated single tube also includes a D pole terminal. The D pole of the encapsulated single tube is electrically connected to the D pole terminal through the conductive medium 12 in the channel hole 11.

[0166] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0167] In this embodiment, the PCB board 1 has a 4-layer structure. Example 9.

[0168] As shown in Figure 11, a highly integrated power module system...

[0169] Includes PCB board 1, two plastic-encapsulated single tubes 2 and heat sink 3;

[0170] The encapsulated single tube 2 is embedded in the PCB board 1;

[0171] The upper surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0172] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0173] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0174] In this embodiment, as shown in FIG11, one plastic-encapsulated single tube is upright embedded in the PCB board 1, and the other plastic-encapsulated single tube is inverted embedded in the PCB board 1.

[0175] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube 2 on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals on the PCB board 1 through the conductive medium 13.

[0176] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0177] In this embodiment, in both upright and inverted plastic-encapsulated single tubes, the channel hole 11 corresponding to the D pole extends to the surface of the PCB board 1. The terminal group corresponding to the plastic-encapsulated single tube also includes a D pole terminal. The D pole of the plastic-encapsulated single tube is electrically connected to the D pole terminal through the conductive medium 12 in the channel hole 11.

[0178] In this embodiment, a highly integrated power module system further includes a motherboard 16, which is electrically connected to the terminals in all the terminal blocks of the aforementioned terminal blocks. Furthermore, a gap is left between the motherboard 16 and the PCB board 1, allowing an external cooling fan to blow in cool air and improve heat dissipation.

[0179] In this embodiment, the PCB board 1 is also provided with active components 17 and passive components 18, which are designed according to actual needs.

[0180] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0181] In this embodiment, the PCB board 1 has a 6-layer structure. Example 10.

[0182] As shown in Figure 12, a highly integrated power module system...

[0183] Includes PCB board 1, two plastic-encapsulated single tubes 2 and heat sink 3;

[0184] The encapsulated single tube 2 is embedded in the PCB board 1;

[0185] The upper surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0186] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0187] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0188] In this embodiment, as shown in FIG12, one plastic-encapsulated single tube is upright embedded in the PCB board 1, and the other plastic-encapsulated single tube is inverted embedded in the PCB board 1.

[0189] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube 2 on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals on the PCB board 1 through the conductive medium 13.

[0190] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0191] In this embodiment, in both upright and inverted plastic-encapsulated single tubes, the channel hole 11 corresponding to the D pole extends to the surface of the PCB board 1. The terminal group corresponding to the plastic-encapsulated single tube also includes a D pole terminal. The D pole of the plastic-encapsulated single tube is electrically connected to the D pole terminal through the conductive medium 12 in the channel hole 11.

[0192] In this embodiment, a highly integrated power module system further includes a motherboard 16, which is electrically connected to the terminals in all the terminal blocks of the terminal blocks. The motherboard 16 is mounted on the surface of the PCB board 1 and is located directly above the plastic-encapsulated single tube 2. The function of the motherboard is to transmit signals and instructions to the module; for example, turning the module on or off requires instructions from the motherboard for the module to function.

[0193] In this embodiment, the PCB board 1 is also provided with active components 17 and passive components 18, which are designed according to actual needs.

[0194] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0195] In this embodiment, the PCB board 1 has a 6-layer structure. Example 11.

[0196] As shown in Figure 13, a highly integrated power module system is described.

[0197] Includes PCB board 1, a plastic-encapsulated single tube 2, and heat sink 3;

[0198] The encapsulated single tube 2 is embedded in the PCB board 1;

[0199] The surface of the PCB board 1 is provided with a terminal block group, and the terminal block 4 in each terminal block group is electrically connected to the corresponding pin in the corresponding plastic-encapsulated single tube 2.

[0200] The lower surface of the PCB board 1 is provided with a thermally conductive insulating layer 5, and the heat sink 3 is attached to the lower surface of the PCB board 1 through the thermally conductive insulating layer 5.

[0201] The encapsulated single tube in this embodiment has the same structure as the encapsulated single tube in Embodiment 1.

[0202] In this embodiment, as shown in FIG13, the plastic-encapsulated single tube is mounted in the PCB board 1.

[0203] In this embodiment, a channel hole 11 is provided at the pin of the plastic-encapsulated single tube 2 on the PCB board 1. The channel hole 11 is filled with a conductive medium 12. The G and S poles on the plastic-encapsulated single tube 2 are electrically connected to the corresponding terminals on the PCB board 1 through the conductive medium 13.

[0204] An insulating layer 14 is provided between the channel hole 11 and the copper layer 13 in the PCB board 1, and the conductive medium 12 in the channel hole 11 is separated from the copper layer 13 in the PCB board 1 by the insulating layer 14.

[0205] In this embodiment, the channel hole 11 corresponding to the D pole of the plastic-encapsulated single tube extends to the surface of the PCB board 1. The terminal group corresponding to the plastic-encapsulated single tube also includes a D pole terminal. The D pole of the plastic-encapsulated single tube is electrically connected to the D pole terminal through the conductive medium 12 in the channel hole 11.

[0206] In this embodiment, a highly integrated power module system further includes a motherboard 16, which is electrically connected to the terminals in all the terminal blocks of the terminal blocks. The motherboard 16 is mounted on one side of the upper surface of the PCB board 1, and the area directly above the plastic-encapsulated single tube 2 is not covered by the motherboard 16, as the area directly above the plastic-encapsulated single tube has the highest heat output, thus preventing it from affecting the motherboard.

[0207] In this embodiment, chip 6 is an IGBT power chip and / or a SiC power chip.

[0208] In this embodiment, the PCB board 1 has a 6-layer structure. Example 12.

[0209] The inventors should note that the encapsulated single tube can also contain two or more chips, as shown in Figures 14 and 15, depending on actual needs. Example 13.

[0210] In this embodiment, as shown in Figure 16, the PCB board is a single-layer structure, namely the PCB insulating layer, and the other structures are the same as in Embodiment 3. Example 14.

[0211] In this embodiment, as shown in Figure 17, the PCB board has a single layer structure, namely the PCB insulating layer, and the other structures are the same as in embodiment 4.

[0212] The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the described embodiments. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention. These equivalent modifications or substitutions are all included within the scope defined by the claims of this application. The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

Claims

1. A highly integrated power module system, characterized in that, Includes a PCB board and at least one plastic-encapsulated single tube; The encapsulated single tube is embedded within the PCB board; The PCB board has terminal blocks on its surface, and the terminals in each terminal block are electrically connected to the corresponding pins in the corresponding plastic-encapsulated tube.

2. The highly integrated power module system as described in claim 1, characterized in that, It also includes a heat sink, and the lower surface of the PCB board is provided with a thermally conductive insulating layer, and the heat sink is attached to the lower surface of the PCB board through the thermally conductive insulating layer.

3. The highly integrated power module system as described in claim 1, characterized in that, The molded single tube includes at least one chip, a metal conductive layer, a lead frame, and a molding compound; The chip is disposed on the lead frame, and both sides of the chip are provided with a metal conductive medium; The S and G terminals on the chip are electrically connected to the corresponding pins on the lead frame via a metal conductive medium. The drain electrode on the chip is electrically connected to the metal conductive layer through a metal conductive medium. The molding compound encapsulates the chip, the metal conductive layer, and the lead frame, with the surfaces of the metal conductive layer and the lead frame exposed outside the molding compound.

4. The highly integrated power module system as described in claim 1, characterized in that, The encapsulated single tube includes at least one chip, a lead frame, and an encapsulation body; The chip is disposed on the lead frame, and a metal conductive medium is provided on the front side of the chip; The S and G terminals on the front side of the chip are electrically connected to the corresponding pins on the lead frame via a metal conductive medium. The molding compound encapsulates the chip and the lead frame, with the back of the chip and the surface of the lead frame both exposed outside the molding compound.

5. A highly integrated power module system as described in claim 2, characterized in that, The encapsulated single tube is mounted upright or upside down within the PCB board.

6. The highly integrated power module system as described in claim 5, characterized in that, Each pin on the PCB board has a channel hole, which is filled with a conductive medium. The G and S pins on the plastic-encapsulated single tube are electrically connected to the corresponding terminals on the PCB board through the conductive medium. An insulating layer is provided between the channel hole and the copper layer in the PCB board, and the conductive medium in the channel hole is separated from the copper layer in the PCB board by the insulating layer.

7. A highly integrated power module system as described in claim 6, characterized in that, The outlet of the channel hole corresponding to the D pole of the encapsulated single tube is directly attached to the thermally conductive insulating layer.

8. A highly integrated power module system as described in claim 6, characterized in that, The channel hole corresponding to the D pole of the plastic-encapsulated single tube extends to the surface of the PCB board. The terminal group corresponding to the plastic-encapsulated single tube also includes a D pole terminal. The D pole of the plastic-encapsulated single tube is electrically connected to the D pole terminal through the conductive medium in the channel hole.

9. A highly integrated power module system as described in claim 5, 6, 7, or 8, characterized in that, It also includes a motherboard, which is electrically connected to the terminals in all of the terminal blocks.

10. A highly integrated power module system as described in claim 9, characterized in that, There is a gap between the motherboard and the PCB board.

11. A highly integrated power module system as described in claim 9, characterized in that, The motherboard is mounted on the upper surface of the PCB board and is located directly above the plastic-encapsulated single tube.

12. A highly integrated power module system as described in claim 9, characterized in that, The motherboard is mounted on one side of the upper surface of the PCB board, and there is no motherboard covering directly above the plastic-encapsulated single tube.

13. A highly integrated power module system as described in claim 9, characterized in that, The PCB board is also equipped with active components and / or passive components.

14. A highly integrated power module system as described in claim 9, characterized in that, The chip is one or more power chips.

15. A highly integrated power module system as described in claim 14, characterized in that, The chip is an IGBT power chip and / or a SiC power chip.

16. A highly integrated power module system as described in claim 1, characterized in that, The PCB board has a structure of two or more layers.

17. A highly integrated power module system as described in claim 1, characterized in that, The PCB board has a 6-layer structure.

Images