Substrate cleaning device, substrate processing device, and substrate cleaning method

Abstract

Provided are a substrate cleaning device and a substrate cleaning method that make it possible to improve the degree to which a substrate is cleaned without causing reverse contamination of the substrate.　A substrate cleaning device according to the present invention comprises a substrate holder 31 that holds a substrate W, a liquid supply device 32 that supplies a liquid to an entire cleaning surface of the substrate W, a foreign substance removal material supply device 33 that supplies a foreign substance removal material 35 that includes at least a polymer material that can dissolve in the liquid to the entire cleaning surface as wetted with the liquid, a solidification device 45 that solidifies the polymer material of the foreign substance removal material 35 that has been supplied to the substrate W, and a peeling device 40 that peels the foreign substance removal material 35 at which the polymer material has been solidified from the cleaning surface of the substrate W.

Description

Substrate cleaning device, substrate processing device, and substrate cleaning method

[0006]

[0001] The present invention relates to a substrate cleaning device and a substrate cleaning method for cleaning a substrate. Further, the present invention relates to a substrate processing device equipped with the substrate cleaning device.

[0002] In recent years, device development has been promoted to realize miniaturization of wiring patterns in semiconductor integrated circuits. In the process of forming these semiconductor integrated circuits, foreign substances such as fine particles and dust may adhere to the semiconductor integrated circuits. And the foreign substances adhering to the semiconductor integrated circuits cause short circuits between wirings and circuit failures. Therefore, in order to improve the reliability of semiconductor integrated circuits, a substrate (for example, a wafer) to be processed is cleaned to remove foreign substances on the processing surface of the substrate.

[0003] Further, a substrate processing device equipped with such a substrate cleaning device has been conventionally used (see Patent Document 1). The substrate processing device described in Patent Document 1 includes both a substrate polishing device for flattening the surface of a substrate such as a wafer and a substrate cleaning device for cleaning the polished substrate. The substrate polishing device described in Patent Document 1 is a device that performs chemical mechanical polishing (CMP: Chemical Mechanical Polishing) treatment. CMP is performed by supplying a polishing liquid (for example, a slurry containing abrasive grains) onto the polishing surface of a polishing pad and bringing the substrate into sliding contact with this polishing surface.

[0004] The substrate cleaning device for cleaning the polished substrate generally has a sponge-like cleaning tool (for example, a roll brush). In such a substrate cleaning device, while supplying a cleaning liquid to the substrate surface, by rubbing the cleaning tool against the substrate surface, foreign substances such as residues of abrasive grains and polishing debris contained in the polishing liquid can be removed from the substrate surface.

[0005] Japanese Unexamined Patent Application Publication No. 2010 - 50436

[0006] However, with conventional substrate cleaning equipment, there is a risk that foreign matter originating from the cleaning tool may adhere to the substrate. For example, so-called reverse contamination can occur, where foreign matter (such as abrasive particles or polishing debris contained in the polishing fluid) that has adhered to the cleaning tool during substrate cleaning re-adheres to the surface of the substrate. Furthermore, if the cleaning tool deteriorates, tiny pieces of the tool that have rubbed against the substrate may detach and adhere to the surface of the substrate. In addition, because the cleaning tool is rubbed against the surface of the substrate, depending on the degree of deterioration of the cleaning tool, there is a risk that the cleaning tool may cause scratches on the substrate surface.

[0007] Furthermore, with the miniaturization of semiconductor integrated circuits in recent years, the demands on the degree of substrate cleaning in substrate cleaning equipment have increased even further, and cleaning processes using sponge-like cleaning tools may not be able to satisfy the required degree of substrate cleaning. For example, when it is required to remove foreign matter with a diameter of several tens of nanometers, the pore diameter of conventional sponge-like cleaning tools is larger than the diameter of the foreign matter, making it difficult to remove this type of foreign matter.

[0008] Furthermore, in conventional substrate cleaning equipment, the cleaning solution containing foreign matter that has been detached from the substrate surface is sometimes removed from the substrate by rotating the substrate after cleaning. In this case, due to the surface tension of the cleaning solution acting on the substrate surface, even if the substrate is rotated at high speed, the movement speed of the cleaning solution near the substrate surface will be slower than the movement speed of the cleaning solution near the liquid surface. Therefore, even if the cleaning tool is able to detach foreign matter from the substrate surface and suspend it in the cleaning solution, the substrate needs to be rotated for a certain amount of time in order to remove the foreign matter contained in the cleaning solution near the substrate surface from the substrate. If the rotation time of the substrate is too short, there is a risk that foreign matter will remain on the substrate, and if the rotation time of the substrate is taken sufficiently, the throughput of the substrate cleaning process will decrease.

[0009] Therefore, the present invention provides a substrate cleaning apparatus and a substrate cleaning method that can improve the cleanliness of a substrate without causing reverse contamination of the substrate. The present invention also provides a substrate processing apparatus equipped with such a substrate cleaning apparatus.

[0010] In one embodiment, a substrate cleaning apparatus is provided for removing foreign matter from the entire cleaning surface of a substrate, comprising: a substrate holder for holding the substrate; a liquid supply device for supplying liquid to the entire cleaning surface of the substrate; a foreign matter removal material supply device for supplying a foreign matter removal material containing at least a polymer material soluble in the liquid to the entire cleaning surface wet with the liquid; a solidification device for solidifying the polymer material of the foreign matter removal material supplied to the substrate; and a peeling device for peeling the solidified foreign matter removal material from the cleaning surface of the substrate.

[0011] In one embodiment, the foreign matter removal material is a strip-shaped tape material, the foreign matter removal material supply device comprises a supply roll around which the foreign matter removal material is wound, and a pressing head that presses the foreign matter removal material supplied from the supply roll to the cleaning surface of the substrate onto the cleaning surface of the substrate, and the peeling device comprises a peeling roller that peels the foreign matter removal material, whose polymer material has been solidified by the solidification device, from the cleaning surface of the substrate. In one embodiment, the pressing head comprises a pressing roller that presses the foreign matter removal material onto the cleaning surface of the substrate, and a roller moving device that moves the pressing roller along the cleaning surface of the substrate, and the solidification device is a heater built into the pressing head. In one embodiment, the pressing head comprises a pressing roller that presses the foreign matter removal material against the cleaning surface of the substrate, and a head moving device that moves the pressing roller along the cleaning surface of the substrate, and the solidification device comprises a heating roller that is provided separately from the pressing head and is pressed against the cleaning surface of the substrate, and a roller moving device that moves the heating roller along the cleaning surface of the substrate.

[0012] In one embodiment, the foreign matter removal material is a strip-shaped tape material, and the foreign matter removal material supply device comprises a supply roll around which the foreign matter removal material is wound, a pair of inlet rollers, and a pair of outlet rollers, the pair of inlet rollers and the pair of outlet rollers being arranged opposite each other so that the substrate can enter together with the foreign matter removal material wound on the supply roll, and the solidification device is positioned between the pair of inlet rollers and the pair of outlet rollers. In another embodiment, the foreign matter removal material is a strip-shaped tape material, and the foreign matter removal material supply device comprises a supply roll around which the foreign matter removal material is wound, a pressing structure having a bottom surface larger than the cleaning surface of the substrate, and a head vertical movement device for moving the pressing structure up and down, and the peeling device comprises a winding roller for peeling the foreign matter removal material, whose polymer material has been solidified by the solidification device, from the surface of the substrate.

[0013] In one embodiment, the foreign matter removal material is a strip-shaped tape material comprising a foreign matter removal layer containing at least the polymer material and a base layer supporting the foreign matter removal layer. In one embodiment, the foreign matter removal material is a strip-shaped sheet material having only a foreign matter removal layer containing at least the polymer material. In one embodiment, the foreign matter removal material is a liquid material containing at least the polymer material, and the foreign matter removal material supply device includes a removal material nozzle for discharging the foreign matter removal material onto the cleaning surface of the substrate.

[0014] In one embodiment, a substrate cleaning method is provided for removing foreign matter from the entire cleaning surface of a substrate, wherein the substrate is held in a substrate holder, a liquid is supplied to the entire cleaning surface of the substrate, a foreign matter removal material containing at least a polymer material soluble in the liquid is supplied to the entire cleaning surface wet with the liquid, the polymer material of the foreign matter removal material supplied to the substrate is solidified, and the solidified foreign matter removal material is peeled off from the cleaning surface of the substrate.

[0015] In one embodiment, the foreign matter removal material is a strip-shaped tape material, and the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by supplying the foreign matter removal material to the cleaning surface of the substrate from a supply roll on which the foreign matter removal material is wound, while a pressing head presses the foreign matter removal material against the cleaning surface of the substrate, and the step of peeling the solidified polymer material from the foreign matter removal material from the cleaning surface of the substrate is performed by a winding roller winding up the foreign matter removal material. In one embodiment, the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by moving the pressing roller of the pressing head along the cleaning surface of the substrate while pressing the foreign matter removal material against the cleaning surface of the substrate, and the step of solidifying the polymer material is performed by a heater built into the pressing head. In one embodiment, the solidification device is provided separately from the pressing head and includes a heating roller that is pressed against the cleaning surface of the substrate. The step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by moving the pressing roller along the cleaning surface of the substrate while the pressing roller of the pressing head presses the foreign matter removal material against the cleaning surface of the substrate. The step of solidifying the polymer material is performed by moving the heating roller along the cleaning surface of the substrate.

[0016] In one embodiment, the foreign matter removal material is a strip-shaped tape material, and the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by supplying the foreign matter removal material to the entire cleaning surface of the substrate from a supply roll while pushing the substrate and the foreign matter removal material into the gaps provided in a pair of inlet rollers and a pair of outlet rollers, respectively, and the step of solidifying the polymer material is performed by a solidification device positioned between the pair of inlet rollers and the pair of outlet rollers. In another embodiment, the foreign matter removal material is a strip-shaped tape material, and the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by pressing the foreign matter removal material against the cleaning surface of the substrate while pressing a pressing structure having a bottom surface larger than the cleaning surface of the substrate against the cleaning surface of the substrate, and the step of peeling the solidified polymer material from the foreign matter removal material to the cleaning surface of the substrate is performed by a winding roller winding up the foreign matter removal material. In one embodiment, the foreign matter removal material is a liquid material containing at least the polymer material, and the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by discharging the foreign matter removal material from a removal material nozzle onto the cleaning surface of the substrate.

[0017] In one embodiment, a substrate processing apparatus is provided, comprising a substrate polishing apparatus for polishing a substrate and a substrate cleaning apparatus for cleaning the substrate polished by the polishing apparatus, wherein the substrate cleaning apparatus is the substrate cleaning apparatus described above.

[0018] Foreign matter on the substrate is first incorporated into the polymer material of the foreign matter removal agent dissolved in liquid, and then the polymer material of the foreign matter removal agent is solidified to retain the foreign matter. Subsequently, the foreign matter is peeled off from the substrate together with the foreign matter removal agent, cleaning the substrate's surface, thus eliminating the need for cleaning tools used in conventional substrate cleaning equipment. As a result, reverse contamination of the substrate, such as abrasive particles contained in the polishing liquid and / or minute parts of the cleaning tools re-adhering to the substrate's surface, can be effectively prevented. In addition, because foreign matter on the substrate's surface is firmly held by the solidified polymer material of the foreign matter removal agent, even ultrafine particles with a diameter of several tens of nanometers can be easily removed from the substrate's surface. As a result, the degree of substrate cleaning can be improved.

[0019] Figure 1 is a plan view showing the overall configuration of a substrate processing apparatus according to one embodiment. Figure 2 is a schematic side view showing a substrate cleaning apparatus according to one embodiment. Figure 3 is a schematic plan view showing the substrate cleaning apparatus shown in Figure 2. Figure 4 is a cross-sectional view of a foreign matter removal material according to one embodiment. Figures 5(a) to 5(d) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figures 2 and 3. Figures 6(a) to 6(c) are schematic diagrams showing how foreign matter present on the cleaning surface of a wafer is removed. Figure 7 is a schematic side view showing a substrate cleaning apparatus according to another embodiment. Figure 8 is a plan view of the substrate cleaning apparatus shown in Figure 7. Figures 9(a) to 9(d) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figures 7 and 8. Figure 10 is a schematic side view showing yet another substrate cleaning apparatus. Figure 11 is a schematic plan view showing the substrate cleaning apparatus shown in Figure 10. Figures 12(a) to 12(c) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figures 10 and 11. Figure 13 is a schematic side view illustrating a substrate cleaning apparatus according to yet another embodiment. Figures 14(a) to 14(c) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figure 13. Figure 15 is a schematic side view illustrating a substrate cleaning apparatus according to yet another embodiment. Figure 16 is a schematic side view illustrating a substrate cleaning apparatus according to yet another embodiment. Figures 17(a) to 17(d) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figure 16.

[0020] Embodiments will be described below with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and redundant descriptions are omitted. Figure 1 is a plan view showing the overall configuration of a substrate processing apparatus according to one embodiment. The substrate processing apparatus 1 shown in Figure 1 is configured to perform a series of polishing processes, which include polishing the surface of a wafer, which is an example of a substrate, cleaning the wafer after polishing, and drying the wafer after cleaning.

[0021] As shown in Figure 1, the substrate processing apparatus 1 comprises a substantially rectangular housing 10 and a load port 12 on which a substrate cassette for accommodating a large number of wafers is mounted. The load port 12 is located adjacent to the housing 10. The load port 12 can be equipped with an open cassette, an SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). SMIF and FOUP are sealed containers that house substrate cassettes inside and are covered with partitions, thereby maintaining an environment independent of the external space.

[0022] The housing 10 contains a plurality of polishing units 14a to 14d (four in this embodiment) for polishing wafers, a first cleaning unit 16 and a second cleaning unit 18 for cleaning the polished wafers, and a drying unit 20 for drying the cleaned wafers. The polishing units 14a to 14d are arranged along the longitudinal direction of the substrate processing apparatus 1, and the cleaning units 16, 18 and the drying unit 20 are also arranged along the longitudinal direction of the substrate processing apparatus 1.

[0023] In this embodiment, the substrate processing apparatus 1 is equipped with a plurality of polishing units 14a to 14d, but the number of polishing units is not limited to this example. For example, the substrate processing apparatus 1 may have only one polishing unit. Furthermore, the substrate processing apparatus 1 is equipped with a plurality of cleaning units 16, 18, but the number of cleaning units is not limited to this example. For example, the substrate processing apparatus 1 may have only one cleaning unit.

[0024] A first substrate transfer robot 22 is positioned in the area surrounded by the load port 12, polishing unit 14a, and drying unit 20, and a substrate transfer unit 24 is positioned parallel to the polishing units 14a to 14d. The first substrate transfer robot 22 receives wafers before polishing from the load port 12 and passes them to the substrate transfer unit 24, and also receives dried wafers from the drying unit 20 and returns them to the load port 12. The substrate transfer unit 24 transports the wafers received from the first substrate transfer robot 22 and transfers wafers between each of the polishing units 14a to 14d. Each of the polishing units 14a to 14d polishes the surface of the wafer by sliding the wafer against the polishing surface while supplying a polishing liquid (for example, a slurry containing abrasive particles) to the polishing surface. This type of polishing process is generally called "CMP (Chemical Mechanical Polishing)".

[0025] A second substrate transport robot 26 is positioned between the first cleaning unit 16 and the second cleaning unit 18 to transport substrates between these cleaning units 16, 18 and the substrate transport unit 24. A third substrate transport robot 28 is positioned between the second cleaning unit 18 and the drying unit 20 to transport substrates between these units 18, 20. Furthermore, a control device 30 is located inside the housing 10 to control the operation of each unit of the substrate processing apparatus 1.

[0026] The wafer is polished by at least one of the polishing units 14a to 14d. The polished wafer is then washed by the first cleaning unit 16 and the second cleaning unit 18, and the washed wafer is further dried by the drying unit 20. In one embodiment, the polished wafer may be washed by either the first cleaning unit 16 or the second cleaning unit 18. An example of the drying unit 20 is a spin drying apparatus that holds the wafer, dries the wafer by spraying IPA vapor from a moving nozzle, and further dries the wafer by rotating it at high speed.

[0027] Figure 2 is a schematic side view showing a substrate cleaning apparatus according to one embodiment, and Figure 3 is a schematic top view showing the substrate cleaning apparatus shown in Figure 2. The substrate cleaning apparatus shown in Figures 2 and 3 is used as the first cleaning unit 16 and / or second cleaning unit 18 of the substrate processing apparatus 1 described above. The control device 30 described above controls the operation of each component provided in the substrate cleaning apparatus.

[0028] The substrate cleaning apparatus shown in Figures 2 and 3 comprises a substrate holder 31 for holding a wafer W, a liquid supply device 32 for supplying liquid to the cleaning surface, which is the upper surface of the wafer W placed on the substrate holder 31, a foreign matter removal material supply device 33 for supplying a foreign matter removal material 35 from the liquid supply device 32 to the cleaning surface of the wafer W, and a peeling device 40 for peeling off the foreign matter removal material 35 supplied to the cleaning surface of the wafer W.

[0029] The substrate holder 31 shown in Figures 2 and 3 comprises a stage 31a on which a wafer W can be placed horizontally, a stage shaft 31b connected to the center of the stage 31a, and a shaft drive 31c that rotatably supports the stage shaft 31b. The stage 31a has a substantially circular upper surface, on which the wafer W is placed. By driving the shaft drive 31c, the stage 31a can be rotated via the stage shaft 31b. If it is not necessary to rotate the stage 31a, the substrate holder 31 may omit the shaft drive 31c. In one embodiment, the shaft drive 31c may move the stage shaft 31b up and down. In this case, the shaft drive 31c can move the stage 31a up and down via the stage shaft 31b.

[0030] The liquid supply device 32 is a device for supplying a liquid in which the polymer material of the foreign matter removal material 35, described later, can dissolve, to the entire cleaning surface of the wafer W placed on the stage 31a of the substrate holder 31. The liquid supply device 32 shown in Figures 2 and 3 has a nozzle 32a capable of discharging liquid, a liquid supply source (not shown) for storing liquid, and a liquid supply line 32b extending from the liquid supply source to the nozzle 32a. The nozzle 32a is configured to supply liquid to the cleaning surface of the wafer W placed on the stage 31a. By supplying liquid to the cleaning surface of the wafer W from the liquid supply device 32 and rotating the stage 31a with the shaft drive 31c of the substrate holder 31, the liquid can be supplied to the entire cleaning surface of the wafer W.

[0031] In one embodiment, the liquid supply device 32 may have a nozzle moving device (not shown) that moves the nozzle 32a horizontally. In this case, the liquid supply device 32 supplies liquid to the entire cleaning surface of the wafer W by discharging liquid from the nozzle 32a and moving the nozzle 32a horizontally on the cleaning surface of the wafer W. If the liquid supply device 32 has a nozzle moving device, the substrate holder 31 may omit the shaft drive 31c.

[0032] In the substrate cleaning apparatus shown in Figures 2 and 3, the foreign matter removal material supply device 33 comprises a supply roll 38 on which the foreign matter removal material 35 is wound, and a pressing head 39. The axis of the supply roll 38 is rotatably supported by a supply roll bearing (not shown). The foreign matter removal material 35 wound on the supply roll 38 extends to a winding roll 48 which functions as a peeling device 40 described later, and the pressing head 39 is positioned between the supply roll 38 and the winding roll 48.

[0033] In this embodiment, the foreign matter removal material 35 is a strip-shaped tape material and contains at least a polymer material that is soluble in the liquid supplied to the cleaning surface of the wafer W by the liquid supply device 32 described above.

[0034] Figure 4 is a cross-sectional view of a foreign matter removal material according to one embodiment. The foreign matter removal material 35 shown in Figure 4 consists of a foreign matter removal layer (polymer material layer) 35a made of a polymer material and a base material layer 35b adhered to the foreign matter removal layer 35a. The foreign matter removal material 35 is wound around both a supply roll 38 and a winding roll 48 such that the foreign matter removal layer 35a faces the cleaning surface of the wafer W placed on the stage 31a of the substrate holder 31.

[0035] In this embodiment, the liquid supplied from the liquid supply device 32 to the cleaning surface of the wafer W is water (pure water), and the polymer material constituting the foreign matter removal layer 35a is selected from polymer materials that are soluble in water. Examples of this type of polymer material include polyvinyl alcohol (PVA), polysulfone (PSF), polyethersulfone (PES), polyetherimide (PEI), polyimide (PI), polytetrafluoroethylene (PTFE), polyethylene (PE), polycarbonate (PC), polyamide (PA), polyacrylic acid (PAA), polyketone, cellulose mixed ester, polyvinylidene fluoride, and polystyrene quaternary ammonium salt. Examples include salts (PSQ), polyethyleneimine, polydiallyldimethylammonium chloride, amino group-containing cationic poly(meth)acrylic acid esters, amino group-containing cationic poly(meth)acrylamide, polyamineamide-epichlorohydrin, polyallylamine, polydicyandiamide, chitosan, cationized chitosan, amino group-containing cationized starch, amino group-containing cationized cellulose, and amino group-containing cationized polyvinyl alcohol. In one embodiment, the polymer material constituting the foreign matter removal layer 35a may be formed from one or more salts of the above polymers.

[0036] As shown in Figure 3, the width S of the foreign matter removal material 35 (length perpendicular to the longitudinal direction of the foreign matter removal material 35) is greater than the diameter D of the wafer W. The pressing head 39 includes a pressing roller 39a having a length greater than the diameter D of the wafer W, and a roller moving mechanism 39b that can move the pressing roller 39a in the vertical and horizontal directions. The pressing roller 39a has a roller shaft (not shown) and is rotatably supported via the roller shaft in a pressing roller bearing (not shown).

[0037] The substrate cleaning apparatus further includes a solidification apparatus 45 capable of solidifying the foreign matter removal layer (i.e., polymer material layer) 35a of the foreign matter removal material 35 supplied to the wafer W. In this embodiment, the solidification apparatus 45 includes a heater 45a placed inside the pressing roller 39a (see Figure 2), and the entire pressing roller 39a is heated to a predetermined temperature by the heater 45a. An example of a heater 45a is a heater.

[0038] Although not shown in the figures, the solidification device 45 may also be a heated gas supply device that supplies gas (for example, dry air or nitrogen) heated to a predetermined temperature into the inside of the pressing roller 39a. In this case, the entire pressing roller 39a is heated to a predetermined temperature by the heated gas.

[0039] When the heating device 45a is operated and the pressing roller 39a is moved along the cleaning surface of the wafer W using the roller moving mechanism 39b, the liquid (water) evaporates from the foreign matter removal material 35, and the foreign matter removal layer 35a, which is a polymer material layer, resolidifies. At this time, foreign matter present on the cleaning surface of the wafer W is more firmly incorporated into the foreign matter removal layer 35a.

[0040] The substrate cleaning apparatus further includes a peeling device 40 for peeling the foreign matter removal material 35 from the wafer W. In this embodiment, the peeling device 40 is composed of the winding roll 48 described above and a winding roll drive machine 49 (see Figure 3) that rotates the winding roll 48. By operating the winding roll drive machine 49, the foreign matter removal material 35 can be peeled off from the cleaning surface of the wafer W.

[0041] Figures 5(a) to 5(d) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figures 2 and 3. Furthermore, Figures 6(a) to 6(c) are schematic diagrams showing how foreign matter present on the cleaning surface of the wafer is removed. To enhance understanding of the invention, Figures 5(a) to 5(d) depict only the wafer W placed on the stage 31a, the nozzle 32a of the liquid supply device 32, the pressing roller 39a of the pressing head 39, the heater 45a of the solidification device 45 built into the pressing roller 39a, the supply roll 38, and the winding roll 48.

[0042] First, the wafer W to be cleaned is placed on the stage 31a of the substrate holder 31 by a transport device such as a hand (not shown) so that its center coincides with the center of the stage 31a, and is held on the stage 31a. Next, as shown in Figure 5(a), liquid is supplied to the cleaning surface of the wafer W from the nozzle 32a of the liquid supply device 32. In this embodiment, when the liquid is supplied to the cleaning surface of the wafer W, the shaft drive 31c (see Figure 2) of the substrate holder 31 is driven, causing the stage 31a and the wafer W to rotate, and the liquid is supplied to the entire surface of the wafer W.

[0043] Next, as shown in Figure 5(b), the pressing head 39 uses its roller moving mechanism 39b to move the pressing roller 39a toward the cleaning surface of the wafer W, pressing the foreign matter removal material 35 (the foreign matter removal layer 35a) toward the cleaning surface of the wafer W with a predetermined pressing force. Next, the pressing head 39 uses its roller moving mechanism 39b to move the pressing roller a along the cleaning surface of the wafer W (i.e., horizontally), thereby supplying the foreign matter removal material 35 to the entire cleaning surface of the wafer W. At this time, the winding roll drive 49 prevents the winding roll 48 from rotating while the supply roll 38 rotates to feed the foreign matter removal material 35 toward the cleaning surface of the wafer W, so that the foreign matter removal material 35 can be supplied to the entire cleaning surface of the wafer W. In this way, the pressing head 39 presses the foreign matter removal layer 35a of the foreign matter removal material 35 against the entire cleaning surface of the wafer W.

[0044] As described above, a liquid in which the polymer material constituting the foreign matter removal layer 35a can be dissolved exists on the entire cleaning surface of the wafer W. Therefore, when the foreign matter removal material 35 is supplied to the entire cleaning surface of the wafer W by the pressing head 39, the foreign matter removal layer 35a of the foreign matter removal material 35 dissolves in the liquid. At that time, foreign matter X existing on the cleaning surface of the wafer W is taken into the foreign matter removal layer 35a (see Fig. 6a).

[0045] Next, the foreign matter removal layer 35a containing the foreign matter is re-solidified by the solidifying device 45. Specifically, as shown in Fig. 5(c), while operating the heating machine 45a of the solidifying device 45, the pressing roller 39a is moved along the cleaning surface of the wafer W (i.e., in the horizontal direction) using the roller moving mechanism 39b of the pressing head 39. By this operation, the moisture contained in the foreign matter removal layer 35a evaporates, and the foreign matter removal layer 35a is solidified. As shown in Fig. 6(b), when the foreign matter removal layer 35a is solidified, the foreign matter X on the wafer W is firmly held in the foreign matter removal layer 35a.

[0046] Next, the pressing roller 39a is moved upward using the roller moving mechanism 39b of the pressing head 39 to separate the pressing roller 39a from the cleaning surface of the wafer W. Next, as shown in Fig. 5(d), the winding roll driving machine 49 (see Fig. 3) of the peeling device 40 is operated to rotate the winding roll 48. By this operation, the foreign matter removal material 35 holding the foreign matter X is wound around the winding roll 48, and the foreign matter removal material 35 is peeled off from the cleaning surface of the wafer W. As a result, the foreign matter X is removed from the cleaning surface of the wafer W together with the foreign matter removal material 35 (see Fig. 6c).

[0047] Thus, in this embodiment, after the foreign matter on the wafer W is once incorporated into the polymer material of the foreign matter removing material 35 dissolved in a liquid, the polymer material of the foreign matter removing material 35 is solidified to be held by the foreign matter removing material 35. Then, the foreign matter is peeled off from the wafer W together with the foreign matter removing material 35 to clean the cleaning surface of the wafer W. Therefore, the cleaning tool used in the conventional substrate cleaning apparatus becomes unnecessary. As a result, it is possible to effectively prevent the reverse contamination of the wafer W in which abrasive grains contained in the polishing liquid attached to the cleaning tool and / or a minute part of the cleaning tool reattach to the cleaning surface of the wafer W. In addition, since the foreign matter on the cleaning surface of the wafer W is firmly held by the polymer material of the foreign matter removing material 35, even if the foreign matter is an ultrafine particle having a diameter of about several tens of nanometers, it can be easily removed from the cleaning surface of the wafer W.

[0048] Further, since the cleaning liquid used in the conventional substrate cleaning apparatus becomes unnecessary, there is no need to remove the foreign matter from the cleaning surface of the wafer W together with the cleaning liquid. Therefore, according to the substrate cleaning apparatus of this embodiment, the foreign matter can be removed from the cleaning surface of the wafer W more easily and quickly as compared with the conventional substrate cleaning apparatus.

[0049] According to an experiment comparing the conventional substrate cleaning process using a sponge-like cleaning tool by the inventors and the substrate cleaning process according to this embodiment, for foreign matters having a diameter of 250 nm or more, the removal rate of the foreign matters is 99.5% or more both in the conventional substrate cleaning process and the substrate cleaning process of this embodiment, and no significant difference appeared. However, for foreign matters having a diameter of 60 nm or more, the foreign matter removal rate of the substrate cleaning process of this embodiment is 150% as compared with the foreign matter removal rate of the conventional substrate cleaning process, and a significant difference appeared for ultrafine foreign matters. In addition, it has been found that according to the substrate cleaning apparatus according to this embodiment, even silica nanoparticles having a diameter of about 10 nm can be effectively removed from the cleaning surface of the wafer W.

[0050] In order to promote the solidification of the polymer material layer 35a by the solidification device 45, the base material layer 35b (see FIG. 4) of the foreign matter removing material 35 may be made of a porous material or a mesh-like material. For example, the base material layer 35b may be made of a non-woven fabric.

[0051] In the embodiment described above, the foreign matter removal material 35 is composed of a polymer material layer 35a and a base layer 35b. However, the composition of the foreign matter removal material 35 is not limited to this example, as long as the foreign matter removal material 35 is not damaged by the series of substrate cleaning processes. For example, the foreign matter removal material 35 may be composed only of the foreign matter removal layer (polymer material layer) 35a, i.e., only the polymer material, by omitting the base layer 35b. In this case, since the re-solidification of the polymer material by the solidification device 45 is performed directly without going through the base layer 35b, an improvement in the throughput of the substrate cleaning process can be expected.

[0052] In one embodiment, the base layer 35b of the foreign matter removal material 35 may be made of a material capable of absorbing the liquid supplied to the cleaning surface of the wafer W (i.e., a liquid in which the polymer material of the foreign matter removal layer 35a can dissolve), or such a material may be incorporated into the base layer 35b. For example, if the liquid in which the polymer material of the foreign matter removal layer 35a can dissolve is water (pure water), the base layer 35b may be made of a water-absorbing material such as silica gel, or such a water-absorbing material may be incorporated into the base layer 35b. In this case, the base layer 35b also functions as a liquid-absorbing layer capable of absorbing the liquid supplied to the cleaning surface of the wafer W.

[0053] With this configuration, the substrate layer 35b, which functions as a liquid absorption layer, absorbs the liquid supplied to the wafer W, allowing for a simpler solidification device 45 and increasing the solidification speed of the foreign matter removal layer 35a. As a result, improved throughput of the wafer W cleaning process can be expected. Furthermore, depending on the amount of liquid supplied to the cleaning surface of the wafer W, the solidification device 45 can be omitted. In this case, the substrate layer 35b, which functions as a liquid absorption layer, functions as a solidification device for re-solidifying the foreign matter removal layer 35a.

[0054] Furthermore, although not shown in the diagram, the liquid water supply layer described above may be sandwiched between the foreign matter removal layer 35a and the base layer 35b of the foreign matter removal material 35. In this configuration as well, the liquid absorption layer sandwiched between the foreign matter removal layer 35a and the base layer 35b absorbs the liquid supplied to the wafer W, allowing for a simpler solidification device 45 and increasing the solidification speed of the foreign matter removal layer 35a. Moreover, depending on the amount of liquid supplied to the cleaning surface of the wafer W, the solidification device 45 can be omitted. In this case as well, the liquid absorption layer sandwiched between the foreign matter removal layer 35a and the base layer 35b functions as a solidification device for re-solidifying the foreign matter removal layer 35a.

[0055] Figure 7 is a schematic side view showing a substrate cleaning apparatus according to another embodiment, and Figure 8 is a plan view of the substrate cleaning apparatus shown in Figure 7. The configuration of this embodiment, which is not specifically described, is the same as that of the embodiment described above, so a redundant explanation is omitted.

[0056] The embodiments shown in Figures 7 and 8 differ from the embodiments described above in that the solidification device 45 is provided separately from the pressing head 39. Specifically, the solidification device 45 includes a heating roller 50 provided separately from the pressing roller 39a of the pressing head 39, and a heating roller moving mechanism 51 that can move the heating roller 50 in the vertical and horizontal directions.

[0057] As shown in Figure 7, the heating roller 50 includes a heating source 52 capable of heating the entire heating roller 50 to a predetermined temperature. The heating source 52 may be a heater built into the heating roller 50, or it may be a heating gas supply device that supplies heated gas (e.g., dry air or nitrogen) to the heating roller 50.

[0058] Figures 9(a) to 9(d) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figures 7 and 8. Figures 9(a) to 9(d) only show the wafer W placed on the stage 31a, the nozzle 32a of the liquid supply device 32, the pressing roller 39a of the pressing head 39, the heating roller 50 of the solidification device 45, the supply roll 38, and the winding roll 48.

[0059] Similar to the embodiment described above, liquid is supplied from the nozzle 32a of the liquid supply device 32 to the entire cleaning surface of the wafer W placed on the stage 31a of the substrate holder 31 (see Figure 9(a)), and then the foreign matter removal material 35 (or its foreign matter removal layer 35a) is supplied to the entire cleaning surface of the wafer W by the pressing head 39 (see Figure 9(b)). In this embodiment as well, the foreign matter removal layer 35a of the foreign matter removal material 35 dissolves in the liquid, and foreign matter present on the cleaning surface of the wafer W is incorporated into the foreign matter removal layer 35a (see Figure 6a).

[0060] Next, the foreign matter removal layer 35a, into which the foreign matter has been incorporated, is re-solidified by the solidification device 45. In this embodiment, as shown in Figure 9(c), the heating roller 50 of the solidification device 45, which has been heated to a predetermined temperature, is moved toward the cleaning surface of the wafer W using the heating roller moving mechanism 51 (see Figures 7 and 8), and also moved along the cleaning surface of the wafer W (i.e., horizontally). This operation evaporates the water contained in the foreign matter removal layer 35a of the foreign matter removal material 35, thereby solidifying the foreign matter removal layer 35a. Once the foreign matter removal layer 35a is solidified, the foreign matter on the wafer W is firmly held in the foreign matter removal layer 35a (see Figure 6(b)).

[0061] Next, the heating roller 50 is moved upward using the heating roller moving mechanism 51, separating the heating roller 50 from the cleaning surface of the wafer W. Then, as shown in Figure 9(d), the winding roll 48 is rotated by operating the winding roll drive 49 (see Figure 3) of the peeling device 40. This operation causes the foreign matter removal material 35, which holds the foreign matter X, to be wound onto the winding roll 48, and the foreign matter removal material 35 is peeled off from the cleaning surface of the wafer W. As a result, the foreign matter X is removed from the cleaning surface of the wafer W together with the foreign matter removal material 35 (see Figure 6(c)). Even with this configuration, the substrate cleaning device can achieve the same effects as the embodiment described above.

[0062] In this embodiment, as in the embodiment described above, the foreign matter removal material 35 may be composed only of a foreign matter removal layer (polymer material layer) 35a, that is, only of a polymer material, by omitting the base material layer 35b.

[0063] Figure 10 is a schematic side view showing yet another substrate cleaning apparatus, and Figure 11 is a schematic top view showing the substrate cleaning apparatus shown in Figure 10. The configuration of this embodiment, which is not specifically described, is the same as that of the embodiment described above, so a redundant explanation is omitted.

[0064] In the embodiments shown in Figures 10 and 11, the foreign matter removal material supply device 33 includes a pair of inlet rollers 53, 53 and a pair of outlet rollers 54, 54 instead of a pressing head 39. That is, in this embodiment, the foreign matter removal material supply device 33 consists of a supply roll 38, a pair of inlet rollers 53, 53 and a pair of outlet rollers 54, 54. The inlet rollers 53, 53 have a longitudinal length greater than the diameter of the wafer W, and the outlet rollers 54, 54 also have a longitudinal length greater than the diameter of the wafer W. Furthermore, the substrate holder 31 includes a stage moving device 31d that can move the stage 31a horizontally, instead of an axis drive machine 31c.

[0065] The foreign matter removal material 35, which is a strip-shaped tape material, extends from the supply roll 38 through the inlet rollers 53, 53 and the outlet rollers 54, 54 to the winding roll 48. In this embodiment, the area between the inlet rollers 53, 53 and the outlet rollers 54, 54 is referred to as the foreign matter removal material area, the area outside the inlet rollers 53, 53 relative to the foreign matter removal material area is referred to as the inlet area, and the area outside the outlet insert rollers 54, 54 relative to the foreign matter removal material area is referred to as the outlet area. In this embodiment, the nozzle 32a of the liquid supply device 32 is located in the inlet area, and the winding roll 48 is located in the outlet area. Note that in Figures 10 and 11, the liquid supply source of the liquid supply device 32 and the liquid supply line extending from the liquid supply source to the nozzle 32a are omitted from the illustration, and only the nozzle 32a is depicted.

[0066] The solidification apparatus 45 shown in Figures 10 and 11 has a heated gas nozzle 56 capable of blowing a gas (for example, dry air or nitrogen) heated to a predetermined temperature onto the foreign matter removal material 35. The heated gas nozzle 56 has a body 56a having a longitudinal length greater than the diameter of the wafer W, and an opening (slit) 56b formed in the body 56a and directed toward the foreign matter removal material 35, extending between the inlet rollers 53, 53 and the outlet rollers 54, 54.

[0067] The solidification device 45 further includes a heating gas supply source (not shown) and a heating gas line 55 extending from the heating gas supply source to the main body 56a. When heating gas is supplied from the heating gas supply source to the heating gas nozzle 56 via the heating gas line 55, the gas heated to a predetermined temperature is ejected from the opening 56b toward the foreign matter removal material 35.

[0068] Figures 12(a) to 12(c) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figures 10 and 11. Figures 12(a) to 12(c) only show the wafer W placed on the stage 31a, the nozzle 32a, the supply roll 38, the inlet rollers 53, 53, the outlet rollers 54, 54, the heating gas nozzle 56, and the winding roll 48.

[0069] In this embodiment, first, the wafer W is placed on the stage 31a in the entrance region. In this state, liquid is supplied to the entire cleaning surface of the wafer W from a nozzle 32a located in the entrance region (see Figure 12(a)). Next, the stage moving device 31d is used to move the stage 31a and the wafer W placed on the stage 31a toward the entrance rollers 53, 53, causing the wafer W to enter between the entrance rollers 53, 53. The foreign matter removal material 35 is sandwiched between the entrance rollers 53, 53, and when the wafer W enters between the entrance rollers 53, 53, the contact pressure between the rotating entrance rollers 53, 53 is used to supply the foreign matter removal material 35 to the cleaning surface of the wafer W. Since liquid is supplied to the cleaning surface of the wafer W, the foreign matter removal layer 35a of the foreign matter removal material 35 dissolves in the liquid, and foreign matter present on the cleaning surface of the wafer W is taken into the foreign matter removal layer 35a (see Figure 6a).

[0070] The stage moving device 31d moves the wafer W further toward the exit rollers 54, 54, during which time heated gas heated to a predetermined temperature is discharged from the heated gas nozzle 56 of the solidification device 45. This operation evaporates the water contained in the foreign matter removal layer 35a of the foreign matter removal material 35, causing the foreign matter removal layer 35a to solidify (see Figure 12(b)). As the foreign matter removal layer 35a solidifies, the foreign matter on the wafer W is firmly held in place by the foreign matter removal layer 35a (see Figure 6(b)).

[0071] The winding roll drive 49 of the peeling device 40 rotates the winding roll 48 in synchronization with the operation of the stage moving device 31d. That is, the operation of the winding roll drive 49 is controlled so that the foreign matter removal material 35 is wound onto the winding roll 48 according to the distance the wafer W is moved. This operation ensures that the amount of wafer W is moved and the amount of foreign matter removal material 35 wound up match, so that the foreign matter removal material 35 is properly supplied to the entire cleaning surface of the wafer W.

[0072] The wafer W is further moved horizontally by the stage moving device 31d and enters the exit rollers 54, 54. As the wafer W exits the exit rollers 54, 54, the foreign matter removal material 35 is separated from the cleaning surface of the wafer W, and the foreign matter is peeled off from the cleaning surface of the wafer W together with the foreign matter removal material 35 (see Figure 12(c)). Even with this configuration, the substrate cleaning apparatus can achieve the same effects as the embodiment described above.

[0073] In this embodiment, as in the embodiment described above, the foreign matter removal material 35 may be composed only of a foreign matter removal layer (polymer material layer) 35a, that is, only of a polymer material, by omitting the base material layer 35b.

[0074] Figure 13 is a schematic side view showing a substrate cleaning apparatus according to yet another embodiment. The configuration of this embodiment, which is not specifically described, is the same as that of the embodiment described above, so a redundant explanation will be omitted.

[0075] In the substrate cleaning apparatus shown in Figure 13, the pressing head 39 of the foreign matter removal material supply device 33 includes a pressing structure (stamp structure) 59 having a bottom surface larger than the cleaning surface of the wafer W. In this embodiment, the pressing structure 59 has a circular bottom surface with a diameter larger than the diameter of the wafer W. The foreign matter removal material supply device 33 further includes a head vertical movement device 57 for moving the pressing structure 59 up and down.

[0076] The stage 31a of the substrate holder 31 is located below the pressing structure 59 and has a diameter larger than the diameter of the wafer W. In this embodiment, the central axis of the pressing structure 59 coincides with the central axis of the stage 31a, and the upper surface of the stage 31a has substantially the same shape as the bottom surface of the pressing structure 59. The foreign matter removal material 35 extends from the supply roll 38 to the winding roll 48 through the space between the pressing structure 59 and the stage 31a, which are spaced apart in the vertical direction.

[0077] In this embodiment, the pressing structure 59 of the solidification device 45 includes an airbag 60 attached to its bottom, a heating gas supply source (not shown) that supplies heating gas to the airbag 60, and a heating gas line 61 extending from the heating gas supply source to the airbag 60. The bottom surface of the airbag 60 constitutes the bottom surface of the pressing structure 59.

[0078] A portion of the heated gas line 61 is formed inside the pressing structure 59 and is configured as a gas flow path 61a that communicates with the airbag 60. A gas (for example, dry air or nitrogen) heated to a predetermined temperature can be supplied to the airbag 60 via the heated gas line 61.

[0079] Figures 14(a) to 14(c) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figure 13. Figures 14(a) to 14(c) show only the wafer W placed on the stage 31a, the nozzle 32a, the supply roll 38, the pressing head 39, and the winding roll 48.

[0080] As shown in Figure 14(a), liquid is supplied from the nozzle 32a of the liquid supply device 32 to the cleaning surface of the wafer W placed on the stage 31a of the substrate holder 31. In this embodiment as well, when the liquid is supplied to the cleaning surface of the wafer W, the shaft drive 31c (see Figure 13) of the substrate holder 31 is driven, causing the wafer W to rotate and the liquid to be supplied to the entire surface of the wafer W.

[0081] Next, as shown in Figure 14(b), the head vertical movement device 57 is used to bring the pressing head 39 into contact with or close to the cleaning surface of the wafer W. Furthermore, heated gas is supplied to the airbag 60 from this state. The airbag 60, inflated by the heated gas, presses the foreign matter removal material 35 (or its foreign matter removal layer 35a) against the cleaning surface of the wafer W with a predetermined pressing force.

[0082] Similar to the embodiment described above, since a liquid capable of dissolving the polymer material constituting the foreign matter removal layer 35a is present across the entire cleaning surface of the wafer W, when the foreign matter removal material 35 is pressed (supplied) across the entire cleaning surface of the wafer W by the pressing head 39, the foreign matter removal layer 35a of the foreign matter removal material 35 dissolves. At that time, foreign matter present on the cleaning surface of the wafer W is incorporated into the foreign matter removal layer 35a (see Figure 6(a)).

[0083] Simultaneously with, or after, the pressing of the foreign matter removal material 35 onto the cleaning surface of the wafer W by the airbag 60, the foreign matter removal material 35 is heated by the heated gas supplied to the airbag 60 of the solidification device 45. This action causes the water contained in the foreign matter removal layer 35a to evaporate, and the foreign matter removal layer 35a solidifies (see Figure 6(b)). As the foreign matter removal layer 35a solidifies, the foreign matter on the wafer W is firmly held in place by the foreign matter removal layer 35a (see Figure 6(c)).

[0084] Next, the head vertical movement device 57 is used to move the pressing head 39 above the cleaning surface of the wafer W, separating the pressing head 39 and the airbag 60 from the cleaning surface of the wafer W. Then, as shown in Figure 14(c), the winding roll drive 49 (see Figure 3) of the peeling device 40 is operated to rotate the winding roll 48. This operation causes the foreign matter removal material 35, which holds the foreign matter, to be wound onto the winding roll 48, and the foreign matter is peeled off from the cleaning surface of the wafer W. Even with this configuration, the substrate cleaning device can achieve the same effects as the embodiment described above.

[0085] In this embodiment, as in the embodiment described above, the foreign matter removal material 35 may be composed only of a foreign matter removal layer (polymer material layer) 35a, that is, only of a polymer material, by omitting the base material layer 35b.

[0086] Figure 15 is a schematic side view showing a substrate cleaning apparatus according to yet another embodiment. The configuration of this embodiment, which is not specifically described, is the same as that of the embodiment described above, so a redundant explanation will be omitted.

[0087] The foreign matter removal material supply device 33 of the substrate cleaning apparatus shown in Figure 15 is equipped with a removal material nozzle 65 for supplying a liquid foreign matter removal material 35 containing at least the polymer material described above to the cleaning surface of the wafer W placed on the stage 31a. In this embodiment, the foreign matter removal material 35 discharged from the removal material nozzle 65 is supplied to the entire cleaning surface of the wafer W by rotating the stage 31a using an axial drive machine 31c. A removal material line 66 extending from a foreign matter removal material source (not shown) to the removal material nozzle 65 is connected to the removal material nozzle 65.

[0088] Furthermore, the solidification apparatus 45 of the substrate cleaning apparatus according to this embodiment includes a heated gas nozzle 56 that blows heated gas onto the foreign matter removal material 35 supplied to the cleaning surface of the wafer W, and a heated gas line 67 that extends from a heated gas source (not shown) to the heated gas nozzle 56.

[0089] In the embodiment shown in Figure 15, first, liquid is discharged from the nozzle 32a of the liquid supply device 32 onto the cleaning surface of the wafer W placed on the stage 31a of the substrate holder 31, supplying the liquid to the entire cleaning surface of the wafer W. Next, liquid foreign matter removal material is discharged from the removal material nozzle 65 onto the wafer W, which has been supplied with liquid to its entire cleaning surface, supplying the foreign matter removal material to the entire cleaning surface of the wafer W. When supplying the liquid to the entire cleaning surface of the wafer W, the stage 31a may be rotated using the shaft drive 31c, or the nozzle 32a may be moved horizontally on the cleaning surface of the wafer W. Similarly, when supplying the liquid foreign matter removal material 35 to the entire cleaning surface of the wafer W, the stage 31a may be rotated using the shaft drive 31c, or the removal material nozzle 65 may be moved horizontally on the cleaning surface of the wafer W. In this case, the foreign matter removal material supply device 33 has a removal material nozzle moving device (not shown) that moves the removal material nozzle 65 horizontally.

[0090] The liquid foreign matter removal material 35 supplied to the cleaning surface of the wafer W dissolves in the liquid present on the cleaning surface of the wafer W, and the foreign matter present on the cleaning surface of the wafer W is incorporated into the foreign matter removal material 35 along with the liquid.

[0091] Next, heated gas is blown from the heated gas nozzle 56 of the solidification device 45 onto the foreign matter removal material 35 supplied to the cleaning surface of the wafer W, thereby solidifying the foreign matter removal material 35. As the foreign matter removal material 35 solidifies, the foreign matter on the wafer W is firmly held by the foreign matter removal material 35.

[0092] In this embodiment, the stage 31a of the substrate holder 31 has a diameter larger than the diameter of the wafer W, and the outer edge of the stage 31a protrudes horizontally beyond the outer edge of the wafer W. The removal material nozzle 65 supplies the foreign matter removal material 35 to an area outside the outer edge of the wafer W, and the solidification device 45 solidifies the foreign matter removal material 35 that is on the stage 31a outside the outer edge of the wafer W.

[0093] The peeling device 40 of the substrate cleaning apparatus shown in Figure 15 includes a gripping device 70 capable of gripping the edge of the foreign matter removal material 35 solidified by the solidification device 45. The gripping device 70 in the illustrated example comprises a pair of claws 70a, 70a for gripping the edge of the foreign matter removal material 35, a claw drive machine 70b that performs an opening and closing operation of the gap between the claws 70a, 70a, and a claw mover machine 70c that moves the claws 70a, 70a to the edge of the solidified foreign matter removal material 35.

[0094] The claw moving machine 70c is operated to move the claws 70a, 70a to the edge of the foreign matter removal material 35, and then the claw driving machine 70b is used to close the gap between the claws 70a, 70a so that the claws 70a, 70a grip the edge of the foreign matter removal material 35. Next, the claw moving machine 70c is operated to move the claws 70a, 70a away from the stage 31a, thereby peeling the foreign matter off the cleaning surface of the wafer W together with the solidified foreign matter removal material 35. Even with this configuration, the substrate cleaning apparatus can achieve the same effects as in the embodiment described above.

[0095] Figure 16 is a schematic side view showing a substrate cleaning apparatus according to yet another embodiment. The configuration of this embodiment, which is not specifically described, is the same as that of the embodiment described above, so a redundant explanation will be omitted.

[0096] The foreign matter removal material supply device 33 of the substrate cleaning apparatus shown in Figure 16 is equipped with a removal material nozzle 65 for supplying a liquid foreign matter removal material 35 containing at least the polymer material described above to the cleaning surface of the wafer W placed on the stage 31a, similar to the substrate cleaning apparatus described with reference to Figure 15. In Figure 16, only the nozzle 32a of the liquid supply device 32 is shown, only the removal material nozzle 65 of the foreign matter removal material supply device 33 is shown, and only the heating gas nozzle 56 of the solidification device 45 is shown.

[0097] Furthermore, the stripping device 40 of the substrate cleaning apparatus includes a substrate supply roll 74 for supplying a strip-shaped substrate 73, a substrate winding roll 75 for winding the substrate 73, and a roll vertical movement device 77 for moving the substrate supply roll 74 and the substrate winding roll 75 up and down. The substrate 73 is wound around the substrate supply roll 74 and the substrate winding roll 75 and extends between the substrate supply roll 74 and the substrate winding roll 75. A substrate winding roll drive unit 78 is connected to the substrate winding roll. In this embodiment, the substrate winding roll drive unit 78 is built into the roll vertical movement device 77. When the winding roll drive unit 78 is operated, the substrate is fed out from the substrate supply roll 74 and wound onto the winding roll 75.

[0098] Figures 17(a) to 17(d) are schematic diagrams illustrating the process of removing foreign matter from the cleaning surface of a wafer using the substrate cleaning apparatus shown in Figure 16. Figures 17(a) to 17(d) depict only the wafer W placed on the stage 31a, the nozzle 32a, the removal material nozzle 65, the substrate supply roll 74, the heating gas nozzle 56 of the solidification apparatus 45, and the substrate winding roll 75.

[0099] In this embodiment, similar to the embodiment described with reference to Figure 15, liquid is discharged from the nozzle 32a of the liquid supply device 32 onto the cleaning surface of the wafer W placed on the stage 31a of the substrate holder 31, supplying the liquid to the entire cleaning surface of the wafer W (see Figure 17(a)). Next, liquid foreign matter removal material is discharged from the removal material nozzle 65 onto the wafer W, which has been supplied with liquid to its entire cleaning surface, supplying the foreign matter removal material to the entire cleaning surface of the wafer W (see Figure 17(b)).

[0100] Next, the roll vertical movement device 77 of the peeling device 40 is operated to move the substrate supply roll 74 and the substrate winding roll 75 toward the cleaning surface of the wafer W until the substrate 73 extending between the substrate supply roll 74 and the substrate winding roll 75 comes into contact with the mixed solution of liquid and foreign matter removal material on the wafer W.

[0101] Next, heated gas is blown from the heated gas nozzle 56 of the solidification device 45 toward the substrate 73 and the foreign matter removal material 35 that is in contact with the substrate 73 (see Figure 17(c)). This action heats the foreign matter removal material 35 via the substrate 73, causing the liquid (water) from the foreign matter removal material 35 to evaporate and the foreign matter removal material 35 containing polymer material to solidify. When the foreign matter removal material 35 solidifies, it adheres to the substrate 73, and foreign matter present on the cleaned surface of the wafer W is firmly incorporated into the foreign matter removal material 35.

[0102] Next, the roll vertical movement device 77 is operated to move the substrate supply roll 74 and the substrate winding roll 75 upward, thereby separating the substrate 73 to which the foreign matter removal material 35 is adhered from the cleaning surface of the wafer W. Then, the winding roll drive machine 78 is operated to rotate the substrate winding roll 75, and the substrate 73 together with the foreign matter removal material 35 that firmly captures the foreign matter is collected by the substrate winding roll 75 (see Figure 17(d)). Even with this configuration, the substrate cleaning apparatus can achieve the same effects as the embodiment described above.

[0103] The embodiments described above are intended to enable persons with ordinary skill in the art to implement the present invention. Various modifications of the above embodiments can be made naturally by those skilled in the art, and the technical idea of ​​the present invention can be applied to other embodiments as well. Therefore, the present invention is not limited to the embodiments described, but is to be interpreted in the broadest sense according to the technical idea defined by the claims.

[0104] 1. Substrate processing equipment 14a, 14b, 14c, 14d Polishing unit 16. First cleaning unit (substrate cleaning device) 18. Second cleaning unit (substrate cleaning device) 20. Drying unit 22. First substrate transfer robot 24. Substrate transfer unit 26. Second substrate transfer robot 28. Third substrate transfer robot 30. Control device 31. Substrate holder 32. Liquid supply device 33. Foreign matter removal material supply device 35. Foreign matter removal material 38. Supply roll 39. Pressing head 40. Peeling device 45. Solidification device 48. Winding roll

Claims

1. A substrate cleaning apparatus for removing foreign matter from the entire cleaning surface of a substrate, comprising: a substrate holder for holding the substrate; a liquid supply device for supplying liquid to the entire cleaning surface of the substrate; a foreign matter removal material supply device for supplying a foreign matter removal material containing at least a polymer material soluble in the liquid to the entire cleaning surface wet with the liquid; a solidification device for solidifying the polymer material of the foreign matter removal material supplied to the substrate; and a peeling device for peeling the solidified foreign matter removal material from the cleaning surface of the substrate.

2. The substrate cleaning apparatus according to claim 1, wherein the foreign matter removal material is a strip-shaped tape material, the foreign matter removal material supply device comprises a supply roll on which the foreign matter removal material is wound, and a pressing head for pressing the foreign matter removal material supplied from the supply roll to the cleaning surface of the substrate onto the cleaning surface of the substrate, and the peeling device comprises a peeling roller for peeling the foreign matter removal material, whose polymer material has been solidified by the solidification device, from the cleaning surface of the substrate.

3. The substrate cleaning apparatus according to claim 2, wherein the pressing head comprises a pressing roller for pressing the foreign matter removal material against the cleaning surface of the substrate, and a roller moving device for moving the pressing roller along the cleaning surface of the substrate, and the solidification device is a heater built into the pressing head.

4. The substrate cleaning apparatus according to claim 2, wherein the pressing head comprises a pressing roller for pressing the foreign matter removal material against the cleaning surface of the substrate, and a head moving device for moving the pressing roller along the cleaning surface of the substrate, and the solidification device comprises a heating roller provided separately from the pressing head and pressed against the cleaning surface of the substrate, and a roller moving device for moving the heating roller along the cleaning surface of the substrate.

5. The substrate cleaning apparatus according to claim 1, wherein the foreign matter removal material is a strip-shaped tape material, the foreign matter removal material supply device comprises a supply roll on which the foreign matter removal material is wound, a pair of inlet rollers, and a pair of outlet rollers, the pair of inlet rollers and the pair of outlet rollers are arranged facing each other so that the substrate can enter together with the foreign matter removal material wound on the supply roll, and the solidification device is arranged between the pair of inlet rollers and the pair of outlet rollers.

6. The substrate cleaning apparatus according to claim 1, wherein the foreign matter removal material is a strip-shaped tape material, the foreign matter removal material supply device comprises a supply roll on which the foreign matter removal material is wound, a pressing structure having a bottom surface larger than the cleaning surface of the substrate, and a head vertical movement device for moving the pressing structure up and down, and the peeling device comprises a winding roller for peeling the foreign matter removal material, whose polymer material has been solidified by the solidification device, from the surface of the substrate.

7. The substrate cleaning apparatus according to any one of claims 2 to 5, wherein the foreign matter removal material is a strip-shaped tape material comprising a foreign matter removal layer containing at least the polymer material and a base material layer supporting the foreign matter removal layer.

8. The substrate cleaning apparatus according to any one of claims 2 to 5, wherein the foreign matter removal material is a strip-shaped sheet material having only a foreign matter removal layer containing at least the polymer material.

9. The substrate cleaning apparatus according to claim 1, wherein the foreign matter removal material is a liquid material containing at least the polymer material, and the foreign matter removal material supply device comprises a removal material nozzle for discharging the foreign matter removal material onto the cleaning surface of the substrate.

10. A method for cleaning a substrate to remove foreign matter from the entire cleaning surface of the substrate, comprising: holding the substrate with a substrate holder; supplying a liquid to the entire cleaning surface of the substrate; supplying a foreign matter removal material containing at least a polymer material soluble in the liquid to the entire cleaning surface wet with the liquid; solidifying the polymer material of the foreign matter removal material supplied to the substrate; and peeling off the solidified foreign matter removal material from the cleaning surface of the substrate.

11. The substrate cleaning method according to claim 10, wherein the foreign matter removal material is a strip-shaped tape material, the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by supplying the foreign matter removal material to the cleaning surface of the substrate from a supply roll on which the foreign matter removal material is wound, while a pressing head presses the foreign matter removal material to the cleaning surface of the substrate, and the step of peeling off the solidified polymer material from the cleaning surface of the substrate is performed by a winding roller winding up the foreign matter removal material.

12. The substrate cleaning method according to claim 11, wherein the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by moving the pressing roller of the pressing head along the cleaning surface of the substrate while pressing the foreign matter removal material against the cleaning surface of the substrate, and the step of solidifying the polymer material is performed by a heater built into the pressing head.

13. The substrate cleaning method according to claim 11, wherein the solidification device is provided separately from the pressing head and includes a heating roller that is pressed against the cleaning surface of the substrate, the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by moving the pressing roller along the cleaning surface of the substrate while the pressing roller of the pressing head presses the foreign matter removal material against the cleaning surface of the substrate, and the step of solidifying the polymer material is performed by moving the heating roller along the cleaning surface of the substrate.

14. The substrate cleaning method according to claim 10, wherein the foreign matter removal material is a strip-shaped tape material, the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by supplying the foreign matter removal material to the entire cleaning surface of the substrate from a supply roll and pushing the substrate and the foreign matter removal material into the gaps provided in a pair of inlet rollers and a pair of outlet rollers, respectively, and the step of solidifying the polymer material is performed by a solidification device disposed between the pair of inlet rollers and the pair of outlet rollers.

15. The substrate cleaning method according to claim 10, wherein the foreign matter removal material is a strip-shaped tape material, the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by pressing the foreign matter removal material against the cleaning surface of the substrate while pressing a pressing structure having a bottom surface larger than the cleaning surface of the substrate against the cleaning surface of the substrate, and the step of peeling the solidified polymer material from the cleaning surface of the substrate is performed by a winding roller winding up the foreign matter removal material.

16. The substrate cleaning method according to claim 10, wherein the foreign matter removal material is a liquid material containing at least the polymer material, and the step of supplying the foreign matter removal material to the entire cleaning surface of the substrate is performed by discharging the foreign matter removal material from a removal material nozzle to the cleaning surface of the substrate.

17. A substrate processing apparatus comprising a substrate polishing apparatus for polishing a substrate, and a substrate cleaning apparatus for cleaning a substrate polished by the polishing apparatus, wherein the substrate cleaning apparatus is the substrate cleaning apparatus described in claim 1.

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