Thermally coupled IGBT static real-time modeling method, and related device
Patent Information
- Application Number
- PCT/CN2025/142500
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-20
- Filing Date
- 2025-12-15
- Publication Date
- 2026-08-27
Smart Images
Figure CN2025142500_27082026_PF_FP_ABST
Abstract
Description
A method and related apparatus for modeling a static real-time model of a thermally coupled IGBT.
[0001] This application claims priority to Chinese Patent Application No. 202510189713.5, filed on February 20, 2025, entitled "A Method and Apparatus for Modeling a Static Real-Time Model of a Thermally Coupled IGBT", the entire contents of which are incorporated herein by reference. Technical Field
[0002] This application relates to the field of power electronics technology, and in particular to a method and related apparatus for modeling a static real-time model of a thermally coupled IGBT. Background Technology
[0003] IGBT (Insulated Gate Bipolar Transistor) is a composite, fully controllable, voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Insulated Gate Field Effect Transistor).
[0004] The construction of IGBT models involves the interaction of multiple physical fields such as electricity, magnetism, heat, and force. Multiphysics modeling and analysis are important tools for studying their thermal management, electromagnetic compatibility, and mechanical fatigue. Traditional IGBT circuit simulations employ the following circuit models: 1) analytical models; 2) behavioral models; 3) numerical models; and 4) hybrid models. Generally, behavioral models offer the best real-time performance and require the least computational resources, while other models consume significant resources and execution time. Behavioral models can achieve rapid device-level modeling and real-time simulation using only the device datasheet. However, analytical, numerical, and hybrid models require specific dimensions and manufacturing descriptions to extract specialized physical parameters. Generally, device datasheets do not provide such detailed manufacturer design specifications, making modeling of general devices very difficult. Therefore, choosing a behavioral model with acceptable accuracy and low computational resource consumption for rapid IGBT modeling and real-time simulation is a feasible and recommended modeling approach. However, for ordinary users, only the IGBT device datasheets provided by the manufacturer are available. These datasheets do not provide specific material parameters, doping concentrations, or other detailed data, posing a significant challenge to users using multiphysics modeling tools. Clearly, existing technologies cannot meet the requirements for behavioral modeling and real-time simulation without semiconductor physical parameters. Summary of the Invention
[0005] This application provides a method and related apparatus for modeling a static real-time model of a thermally coupled IGBT, which is used to solve the hardware-in-the-loop testing requirements that can meet the needs of behavioral modeling and real-time simulation and realize the power consumption requirements of normal operation in both on-state and off-state, in the absence of semiconductor physical parameters.
[0006] In view of this, the first aspect of this application provides a method for modeling a thermally coupled IGBT static real-time model, the method comprising:
[0007] Based on the IGBT's device datasheet, the electrical characteristics of the IGBT are modeled, including electrical components and power losses.
[0008] Based on the device data sheet and in conjunction with the power loss thermal resistance circuit, the electrothermal characteristics of the IGBT are modeled. The power loss thermal resistance circuit includes: series thermal resistance within the module, thermal conductive adhesive thermal resistance, heat sink thermal resistance, and ambient temperature voltage bias.
[0009] The interaction between the electrical characteristics and the electrothermal characteristics is modeled.
[0010] Optionally, the step of modeling the electrical characteristics of the IGBT based on the IGBT's device datasheet includes:
[0011] The temperature curve in the IGBT-based device data sheet is used to obtain the static curve of the current temperature through linear fitting, which is then used for electrical component modeling.
[0012] The chart data in the device data table is analyzed to obtain the switching loss model, and the conduction loss is obtained through Joule's law for power loss modeling.
[0013] Optionally, the step of modeling the electrothermal characteristics of the IGBT based on the device data sheet and in conjunction with the power loss thermal resistance circuit includes:
[0014] The parameters of the capacitor pair with series thermal resistance within the module are obtained through the device data table. The parameters of the thermal conductive adhesive thermal resistance and the heat sink thermal resistance are set according to the IGBT model. The ambient temperature voltage bias is set to the ambient room temperature. Combined with the power loss, the electrothermal characteristics of the IGBT are modeled.
[0015] Optionally, the interaction between the electrical characteristic portion and the electrothermal characteristic portion is modeled, including:
[0016] The electrical properties in the electrical part are updated within a step size based on the electrothermal properties in the electrothermal characteristic part to model the interaction between the electrical characteristic part and the electrothermal characteristic part.
[0017] A second aspect of this application provides a static real-time modeling system for thermally coupled IGBTs, the system comprising:
[0018] The first modeling unit is used to model the electrical characteristics of the IGBT based on the IGBT's device data sheet. The electrical characteristics include electrical components and power losses.
[0019] The second modeling unit is used to model the electrothermal characteristics of the IGBT based on the device data sheet and in conjunction with the power loss thermal resistance circuit. The power loss thermal resistance circuit includes: in-module series thermal resistance, thermal conductive adhesive thermal resistance, heat sink thermal resistance, and ambient temperature voltage bias.
[0020] The third modeling unit is used to model the interaction between the electrical characteristics and the electrothermal characteristics.
[0021] Optionally, the first modeling unit is specifically used for:
[0022] The temperature curve in the IGBT-based device data sheet is used to obtain the static curve of the current temperature through linear fitting, which is then used for electrical component modeling.
[0023] The chart data in the device data table is analyzed to obtain the switching loss model, and the conduction loss is obtained through Joule's law for power loss modeling.
[0024] Optionally, the second modeling unit is specifically used for:
[0025] The parameters of the capacitor pair with series thermal resistance within the module are obtained through the device data table. The parameters of the thermal conductive adhesive thermal resistance and the heat sink thermal resistance are set according to the IGBT model. The ambient temperature voltage bias is set to the ambient room temperature. Combined with the power loss, the electrothermal characteristics of the IGBT are modeled.
[0026] Optionally, the third modeling unit is specifically used for:
[0027] The electrical properties in the electrical part are updated within a step size based on the electrothermal properties in the electrothermal characteristic part to model the interaction between the electrical characteristic part and the electrothermal characteristic part.
[0028] A third aspect of this application provides a modeling device for a thermally coupled IGBT static real-time model, the device comprising a processor and a memory:
[0029] The memory is used to store program code and transmit the program code to the processor;
[0030] The processor is configured to execute the steps of the thermally coupled IGBT static real-time modeling method as described in the first aspect above, according to the instructions in the program code.
[0031] A fourth aspect of this application provides a computer-readable storage medium for storing program code for executing the thermally coupled IGBT static real-time model modeling method described in the first aspect above.
[0032] As can be seen from the above technical solutions, this application has the following advantages:
[0033] This application provides a method for modeling a thermally coupled IGBT static real-time model. Based on the device datasheet, it models the electrical characteristics and electrothermal characteristics separately, and also models the interaction between the two. This utilizes a two-segment linearization approach, significantly reducing the time-consuming problem of nonlinear iterations and improving the algorithm for predicting other operating temperatures. Furthermore, it leverages the temperature-dependent variability of IGBT electrical properties to update these properties. This method achieves refined thermally coupled modeling of IGBTs while maintaining real-time computational efficiency. It allows for hardware-in-the-loop testing to evaluate the safety and adequacy of the power system and its control system. This solves the hardware-in-the-loop testing requirements for behavioral modeling and real-time simulation, and for achieving normal on-state and off-state power consumption, even in the absence of semiconductor physical parameters. Attached Figure Description
[0034] Figure 1 is a flowchart illustrating a method for modeling a thermally coupled IGBT static real-time model provided in an embodiment of this application;
[0035] Figure 2 shows the static characteristic curves of the same IGBT at different temperatures provided in the embodiments of this application;
[0036] Figure 3 shows the chart data in the device data table provided in the embodiments of this application;
[0037] Figure 4 is a power loss thermal resistance circuit diagram provided in the embodiment of this application;
[0038] Figure 5 shows the parameters of the series resistor-capacitor pair within the module provided in the device data table provided in the embodiments of this application;
[0039] Figure 6 is a schematic diagram showing the interaction between the electrical characteristics and the electrothermal characteristics provided in the embodiments of this application;
[0040] Figure 7 is a schematic diagram of the structure of a thermally coupled IGBT static real-time modeling system provided in an embodiment of this application. Detailed Implementation
[0041] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.
[0042] Please refer to Figure 1. An embodiment of this application provides a method for modeling a thermally coupled IGBT static real-time model, including:
[0043] Step 101: Based on the IGBT's equipment data sheet, model the electrical characteristics of the IGBT. The electrical characteristics include electrical components and power losses.
[0044] In one embodiment, step 101 includes: obtaining a static curve of the current temperature based on the temperature curve in the IGBT device data table using linear fitting, for modeling electrical components; analyzing the chart data in the device data table to obtain switching loss modeling, and obtaining conduction loss through Joule's law, for power loss modeling.
[0045] It should be noted that step 101 involves modeling and describing the electrical characteristics, including modeling and describing the equivalent electrical components and modeling the IGBT switching losses.
[0046] Electrical Components: As shown in Figure 2, the static characteristic curves of the same IGBT at different temperatures can be roughly divided into two segments: a low-current segment and a high-current segment, with the 60% nominal current point as the boundary. It can be seen that the linearization is high above 60%, and slightly lower below 60%. If most of the normal operating points are below 60%, it indicates that the selected device current parameters are too large. Therefore, under normal circumstances, the device should operate within the linear region above 60%. The slope of the linear fitting region is the conductance value of the current operating region. For temperatures between 25℃ and 125℃, the static characteristic curves for other temperatures can be obtained using linear fitting. If multiple device datasheets contain temperature curves, linear fitting can be used to derive the static characteristic curve for the current temperature.
[0047] Power loss: Switching loss modeling is derived from chart data in the equipment data sheet, as shown in Figure 3. The current switching loss can be queried for each turn-on and turn-off, and these values are aggregated to provide interactive data for the power loss in the electrothermal characteristics section. In addition to switching losses, there are also conduction losses, which can be calculated using Joule's law: P = I 2 R represents the on-state loss.
[0048] Step 102: Based on the equipment data sheet and the power loss thermal resistance circuit, model the electrothermal characteristics of the IGBT. The power loss thermal resistance circuit includes: the series thermal resistance within the module, the thermal conductive adhesive thermal resistance, the heat sink thermal resistance, and the ambient temperature voltage bias.
[0049] In one embodiment, step 102 includes: obtaining the capacitor pair parameters of the series thermal resistance within the module through the device data sheet, setting the parameters of the thermal conductive adhesive thermal resistance and the heat sink thermal resistance according to the IGBT model, setting the ambient temperature voltage bias to ambient room temperature, and combining the power loss to model the electrothermal characteristics of the IGBT.
[0050] Regarding step 102, it should be noted that, as shown in Figure 4, the power loss thermal resistance circuit diagram includes the internal series thermal resistance, thermal conductive adhesive thermal resistance, heat sink thermal resistance, and ambient temperature and voltage bias. Power loss is the sum of the IGBT's turn-on / turn-off losses and on-state losses, which can be obtained through modeling in step 101. Specifically, the internal series thermal resistance in the power loss thermal resistance circuit is provided by different series resistor-capacitor pair parameters from the device datasheet. The thermal conductive adhesive and heat sink parameters are filled into the circuit according to the selected models. The ambient temperature and voltage bias are the ambient room temperature. Figure 5 shows the internal series resistor-capacitor pair parameters provided in the device datasheet: Power loss includes switching losses and conduction losses. Switching losses are the losses at the moment the device is turned on and off, which can be obtained from the device datasheet and accumulated into the current power loss. Conduction losses are the on-state losses after the device is turned on, which can be obtained using Joule's law and accumulated into the current power loss.
[0051] Step 103: Model the interaction between the electrical characteristics and the electrothermal characteristics.
[0052] In one embodiment, step 103 includes: updating the electrical properties in the electrical portion within a step size based on the electrothermal properties in the electrothermal characteristic portion, for modeling the interaction portion of the electrical characteristic portion and the electrothermal characteristic portion.
[0053] Regarding step 103, as shown in Figure 6, the temperature at the junction of the module and the thermally conductive adhesive, calculated using the power loss thermal resistance circuit, is the characteristic temperature of the device's static characteristics. Based on this temperature under the electrothermal characteristic, the corresponding static curve is derived, thereby updating the static characteristic curve of the electrical properties at the current temperature and the switching power loss within this step size. The power loss also has a temperature-dependent curve. Electrical and electrothermal characteristics influence each other. The step size for the electrothermal characteristics can be adjusted to the tens of microseconds or hundreds of microseconds. The parameters of the electrical characteristics do not change within the electrothermal characteristic step size; the new electrical characteristics are updated only after the next step size calculation for the electrothermal characteristics.
[0054] It should be noted that the calculation step size for changes in electrical characteristics can be on the micro-nanosecond scale, and the calculation of the electrothermal characteristic circuit can be extended to about 100 times the step size of the electrical characteristics while maintaining high calculation accuracy. In other words, the calculation of the electrical characteristic circuit can be performed in 100 steps, and the data accumulated can be interacted with the electrothermal characteristic circuit once.
[0055] This application provides a method for modeling a thermally coupled IGBT static real-time model. It utilizes a two-segment linearization approach based on the device datasheet, significantly reducing the time-consuming nature of nonlinear iterations and improving the algorithm for predicting other operating temperatures. Furthermore, by leveraging the temperature-dependent electrical properties of the IGBT device and solving for the node voltage using a thermal resistance circuit, the updated electrical properties of the device at different temperatures are obtained, including static characteristics and power losses (switching and conduction). Conversely, these electrical properties influence electrothermal properties and other parameters. This method enables refined thermally coupled modeling of IGBTs while achieving real-time computational efficiency. It allows for hardware-in-the-loop testing to evaluate the safety and adequacy of the power system and its control system. This solves the hardware-in-the-loop testing requirements for behavioral modeling and real-time simulation, and for achieving normal on-state and off-state power consumption, even in the absence of semiconductor physical parameters.
[0056] The above is a method for modeling a thermally coupled IGBT static real-time model provided in the embodiments of this application. The following is a system for modeling a thermally coupled IGBT static real-time model provided in the embodiments of this application.
[0057] Please refer to Figure 7. An embodiment of this application provides a thermally coupled IGBT static real-time modeling system, comprising:
[0058] The first modeling unit 201 is used to model the electrical characteristics of the IGBT based on the IGBT's device data sheet. The electrical characteristics include electrical components and power losses.
[0059] The second modeling unit 202 is used to model the electrothermal characteristics of the IGBT based on the equipment data sheet and in conjunction with the power loss thermal resistance circuit. The power loss thermal resistance circuit includes: the series thermal resistance within the module, the thermal conductive adhesive thermal resistance, the heat sink thermal resistance, and the ambient temperature voltage bias.
[0060] The third modeling unit 203 is used to model the interaction between the electrical characteristics and the electrothermal characteristics.
[0061] Furthermore, this application embodiment also provides a thermally coupled IGBT static real-time modeling device, the device including a processor and a memory:
[0062] The memory is used to store program code and transmit the program code to the processor;
[0063] The processor is used to execute the steps of the thermally coupled IGBT static real-time model modeling method as described in the above method embodiments, according to the instructions in the program code.
[0064] Furthermore, this application embodiment also provides a computer-readable storage medium for storing program code, which is used to execute the thermally coupled IGBT static real-time model modeling method described in the above method embodiment.
[0065] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working process of the system and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.
[0066] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.
[0067] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.
[0068] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between apparatuses or units through some interfaces, and may be electrical, mechanical, or other forms.
[0069] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0070] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.
[0071] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes: USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, optical disks, and other media capable of storing program code.
[0072] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.
Claims
1. A method for modeling a static real-time model of a thermally coupled IGBT, characterized in that, include: Based on the IGBT's device datasheet, the electrical characteristics of the IGBT are modeled, including electrical components and power losses. Based on the device data sheet and in conjunction with the power loss thermal resistance circuit, the electrothermal characteristics of the IGBT are modeled. The power loss thermal resistance circuit includes: series thermal resistance within the module, thermal conductive adhesive thermal resistance, heat sink thermal resistance, and ambient temperature voltage bias. The interaction between the electrical characteristics and the electrothermal characteristics is modeled.
2. The method for modeling a thermally coupled IGBT static real-time model according to claim 1, characterized in that, The step of modeling the electrical characteristics of the IGBT based on its device data sheet includes: The temperature curve in the IGBT-based device data sheet is used to obtain the static curve of the current temperature through linear fitting, which is then used for electrical component modeling. The chart data in the device data table is analyzed to obtain the switching loss model, and the conduction loss is obtained through Joule's law for power loss modeling.
3. The method for modeling a thermally coupled IGBT static real-time model according to claim 1, characterized in that, The step of modeling the electrothermal characteristics of the IGBT based on the device data sheet and in conjunction with the power loss thermal resistance circuit includes: The parameters of the capacitor pair with series thermal resistance within the module are obtained from the device data sheet. The parameters of the thermal conductive adhesive thermal resistance and the heat sink thermal resistance are set according to the IGBT model. The ambient temperature voltage bias is set to the ambient room temperature. The electrothermal characteristics of the IGBT are modeled in conjunction with the power loss.
4. The method for modeling a thermally coupled IGBT static real-time model according to claim 1, characterized in that, Modeling the interaction between the electrical characteristics and the electrothermal characteristics includes: The electrical properties in the electrical part are updated within a step size based on the electrothermal properties in the electrothermal characteristic part to model the interaction between the electrical characteristic part and the electrothermal characteristic part.
5. A modeling system for a thermally coupled IGBT static real-time model, characterized in that, include: The first modeling unit is used to model the electrical characteristics of the IGBT based on the IGBT's device data sheet. The electrical characteristics include electrical components and power losses. The second modeling unit is used to model the electrothermal characteristics of the IGBT based on the device data sheet and in conjunction with the power loss thermal resistance circuit. The power loss thermal resistance circuit includes: in-module series thermal resistance, thermal conductive adhesive thermal resistance, heat sink thermal resistance, and ambient temperature voltage bias. The third modeling unit is used to model the interaction between the electrical characteristics and the electrothermal characteristics.
6. The thermally coupled IGBT static real-time modeling system according to claim 5, characterized in that, The first modeling unit is specifically used for: The temperature curve in the IGBT-based device data sheet is used to obtain the static curve of the current temperature through linear fitting, which is then used for electrical component modeling. The chart data in the device data table is analyzed to obtain the switching loss model, and the conduction loss is obtained through Joule's law for power loss modeling.
7. The thermally coupled IGBT static real-time modeling system according to claim 5, characterized in that, The second modeling unit is specifically used for: The parameters of the capacitor pair with series thermal resistance within the module are obtained through the device data table. The parameters of the thermal conductive adhesive thermal resistance and the heat sink thermal resistance are set according to the IGBT model. The ambient temperature voltage bias is set to the ambient room temperature. Combined with the power loss, the electrothermal characteristics of the IGBT are modeled.
8. The thermally coupled IGBT static real-time modeling system according to claim 5, characterized in that, The third modeling unit is specifically used for: The electrical properties in the electrical part are updated within a step size based on the electrothermal properties in the electrothermal characteristic part to model the interaction between the electrical characteristic part and the electrothermal characteristic part.
9. A device for modeling a thermally coupled IGBT static real-time model, characterized in that, The device includes a processor and a memory: The memory is used to store program code and transmit the program code to the processor; The processor is used to execute the thermally coupled IGBT static real-time modeling method according to any one of the claims 1-4, based on the instructions in the program code.
10. A computer-readable storage medium, characterized in that, The computer-readable storage medium is used to store program code for executing the thermally coupled IGBT static real-time modeling method according to any one of claims 1-4.