Lapping Machines TRIZ Cases

Asymmetric bell-shaped abrasive composites maintain consistent load-bearing area during erosion, extending useful life beyond conventional pyramidal products.

External laser components heat slider transducers to protrude write poles and readers toward the lapping surface.

Regulating gas flow rates via dedicated valves inflates the elastic membrane precisely, preventing excessive stress on wafers during release.

A hydrophobic coating on a substrate exterior surface maintains water contact angles above 100 degrees after abrasion testing.

Displacement sensors measure horizontal plate height positions to calculate upper turn table relative height and eccentric angle.

Dynamic nozzle positioning corrects non-uniform flow rates, ensuring consistent material removal during chemical mechanical planarization.

Eddy current sensor impedance coordinates define an arc trajectory to isolate substrate resistivity interference and pad wear distance variations.

A temperature control system sprays aerosolized coolant directly onto a polishing pad to manage the substrate surface.

Imaging device generates moire pattern from wafer lattice to determine pitch and detect polishing end point without high-magnification microscopy.

A rotary joint uses a link mechanism with spherical plain bearings to constrain rotation and absorb stick-slip vibrations.

A polishing head elastic membrane uses a vaulted shape to press the retainer ring against the polishing pad.

High-pressure water injection cleans the rotating dresser surface, preventing debris accumulation that reduces polishing efficiency.

A light transmitting member uses a screw thread for detachable attachment to a polishing pad.

A flushing device clears processing liquid supply lines using a dedicated cleaning liquid and switching valve.

Cleaning removes cerium oxide residue before silica polishing to prevent abrasive aggregation.

Separating the swing arm from the rotating table removes noise interference, enabling precise polishing end point detection based on measured torque.

Weight measurement in the relay block determines removal amounts within permissible ranges, resolving precision and complexity trade-offs.

A laser-based conditioning device emits a beam toward a polishing surface to achieve uniform roughness, eliminating debris generation from mechanical abrasion.

Sequential polishing with metal liquid and deionized water reduces gate electrode residue on interlayer dielectric layers, improving device performance.

Normalize in-situ optical spectra using a pre-deposition base spectrum to filter noise from underlayer variations and determine the precise polishing endpoint.

Raising the retainer ring above the workpiece before lifting prevents bending and stress caused by worn ring surfaces.

Lapped coatings on degradable downhole tools resist corrosion during storage, enabling controlled degradation after deployment.

A fluid storage element buffers pressure to inflate a polishing head membrane for wafer release.

Diluting colloidal silica slurry with ammonia water prevents particle aggregation, maintaining dispersion quality and reducing haze levels on polished surfaces.

Ion implantation confined to the main flat portion eliminates chamfering and etching, reducing processing time and cost.

A polishing apparatus separates film thickness measurement from processing steps to reduce substrate waiting times.

Hydrophilic fibrous base material reduces contact angle to 45-60 degrees, resolving low polishing rates in resinous carriers.

Sweeping sensors detect substrate edges to calculate positions, reducing chattering errors during chemical mechanical polishing.

Radial temperature sensors measure region-specific heat changes to determine the exact polishing end point, resolving incomplete thickness variations.

An acoustic sensor detects polishing signals to identify substrate planarization, resolving endpoint uncertainty caused by slurry and pad variations.

Inputting time-series pressure data into a learned model estimates polishing pad life, preventing premature replacement and maintaining film thickness profiles.

Soft X-ray irradiation prevents dielectric substrate charging during pure water rinsing, eliminating particle reattachment risks.

Concurrent dual-temperature slurry dispensing maintains constant pad temperature, preventing corrosion and dishing defects during high-rate polishing.

Actuator-driven roller adjusts substrate carrier load ring to control polishing pressure distribution.

A polishing apparatus injects fluid between the substrate and pad to break vacuum adhesion for safe lifting.

A polishing apparatus uses a supplying device with adjustable sidewall pressing forces to control liquid distribution on the pad.

Shaping unit molds polishing pad geometry to match wafer contours, maintaining desired angle and step during the process.

A polishing method calculates film thickness differences using reference and monitoring spectrum histories to eliminate pre-polishing steps.

A polishing pad uses ceramic abrasive composites dispersed in a porous matrix to mechanically remove material from substrates.

An eddy current sensor inside a polishing table projection member reduces distance to the semiconductor wafer.

Classify reflected light spectra into primary and secondary groups to determine substrate film thickness accurately.

Positioning cleaning nozzles at an intermediate station avoids transfer mechanism obstruction, ensuring thorough substrate and top ring cleaning.

Segmented bulk and precision stages use a dynamic small pad to correct thickness non-uniformities while minimizing slurry consumption.

A rotating non-contact thermal sensor sweeps across a chemical mechanical polishing pad to map temperature profiles.

Light activates photocatalyst grains in the grinding stone to generate hydroxy radicals that embrittle hard materials, reducing excessive wear.

Optical in-situ monitoring tracks layer thickness during face-up polishing to correct radial and angular non-uniformity.

Adjustable carrier apertures and variable pressure distribution maintain surface flatness while minimizing edge roll-off during double-sided polishing.

A pivotable collet retaining ring tightly clamps semiconductor substrates during processing.

Rotatable carrier arms pivot substrate holders to enable parallel wafer processing on multiple platens.