Semiconductor device including through-silicon via structure and method of manufacturing the same

Abstract

The present disclosure relates to a semiconductor device including a through silicon via structure and a method of manufacturing the same. The semiconductor device can include a via hole, a first electrode, a second electrode, and a first protective insulating layer. The via hole can be formed to penetrate a substrate. The first electrode can include an electrode segment formed on a surface of the via hole. The second electrode can be formed on the first electrode along the surface of the via hole. The second electrode can include two ends placed below the surface of the substrate. The first protective insulating layer can be formed on the second electrode along the surface of the via hole. The first protective insulating layer can include two ends protruding upward from the two ends of the second electrode.

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