Display panel and manufacturing method thereof, and display device

Abstract

The present application provides a display panel and a manufacturing method thereof, and a display device, wherein the display panel includes: a light emitting diode group located on one side of a driving substrate; a packaging layer located on the side of the light emitting diode group away from the driving substrate; a heat absorbing luminescent layer located between the packaging layer and the driving substrate; a red light emitting diode in contact with the heat absorbing luminescent layer; the heat absorbing luminescent layer includes a first conductive material and a second conductive material, the first conductive material is connected to the negative electrode of a power source, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive electrode of a power source, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat absorbing luminescent layer includes a third material that emits red light. The present application can reduce the attenuation of the luminous efficiency of the red light emitting diode, thereby effectively improving the color deviation of the light emitting display of the display panel and enhancing the display effect of the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] With the continuous development of display technology, the visual effects of display panels are constantly improving, bringing users better and better visual experience.

[0003] With the development of light-emitting diode (LED), Mini-LED (Mini-light-emitting diode) and Micro-LED (Micro-light-emitting diode) have become the main components of the next generation display technology due to factors such as cost and display effect. Mini-LED or Micro-LED display panels are lower in cost, thinner, have large-scale mass production capabilities, and have longer lifespans and lower power consumption, and have attracted the attention of major panel manufacturers.

[0004] However, due to problems in the manufacturing process of Mini-LED or Micro-LED display panels, the light-emitting display of the display panel often produces a certain color cast, such as yellowish or bluish, which affects the display effect of the display panel.

[0005] Therefore, how to effectively improve the color cast of the light-emitting display of the display panel and enhance the display effect of the display panel is a technical problem that needs to be solved in the art. Summary of the invention

[0006] In view of this, this summary of the invention is provided to introduce the concepts in a brief form, which will be described in detail in the detailed description section below. This summary of the invention is not intended to identify the key features or essential features of the technical solution claimed for protection, nor is it intended to be used to limit the scope of the technical solution claimed for protection.

[0007] The purpose of the present application is to provide a display panel and a manufacturing method thereof, and a display device, which can effectively improve the color cast of the luminous display of the display panel and enhance the display effect of the display panel.

[0008] To achieve the above purpose, this application has the following technical solutions:

[0009] In a first aspect, an embodiment of the present application provides a display panel, including:

[0010] Driver substrate;

[0011] A light emitting diode group located on one side of the driving substrate; the light emitting diode group includes a red light emitting diode, a green light emitting diode and a blue light emitting diode;

[0012] A packaging layer located on a side of the light emitting diode group away from the driving substrate;

[0013] A heat-absorbing luminescent layer is located between the encapsulation layer and the driving substrate; the red light-emitting diode is in contact with the heat-absorbing luminescent layer; the heat-absorbing luminescent layer includes a first conductive material and a second conductive material, the first conductive material is connected to the negative pole of the power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive pole of the power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat-absorbing luminescent layer includes a third material that emits red light.

[0014] In a second aspect, an embodiment of the present application provides a method for manufacturing a display panel, comprising:

[0015] Providing a drive substrate;

[0016] A light emitting diode group and a heat absorbing light emitting layer are formed and bound to the driving substrate; the light emitting diode group includes a red light emitting diode, a green light emitting diode and a blue light emitting diode;

[0017] A packaging layer is formed on the side of the light emitting diode group away from the driving substrate; the heat absorbing and luminescent layer is located between the packaging layer and the driving substrate, and the red light emitting diode is formed in contact with the heat absorbing and luminescent layer;

[0018] The heat-absorbing luminescent layer includes a first conductive material and a second conductive material, the first conductive material is connected to the negative pole of the power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive pole of the power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat-absorbing luminescent layer includes a third material that emits red light.

[0019] In a third aspect, an embodiment of the present application provides a display device, comprising the display panel as described above.

[0020] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0021] The embodiment of the present application provides a display panel and a manufacturing method thereof, and a display device, wherein the display panel comprises: a driving substrate; a light emitting diode group located on one side of the driving substrate; the light emitting diode group comprises a red light emitting diode, a green light emitting diode and a blue light emitting diode; a packaging layer located on the side of the light emitting diode group away from the driving substrate; a heat absorbing light emitting layer located between the packaging layer and the driving substrate; the red light emitting diode is in contact with the heat absorbing light emitting layer; the heat absorbing light emitting layer comprises a first conductive material and a second conductive material, the first conductive material is connected to the negative electrode of the power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive electrode of the power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat absorbing light emitting layer comprises a third material that emits red light. That is, the present application utilizes the heat absorbing light emitting layer to absorb the heat of the red light emitting diode to produce thermoluminescence, which can not only increase the light emitting brightness of the red light emitting diode, but also reduce the light emitting temperature of the red light emitting diode, and reduce the light emitting efficiency attenuation of the red light emitting diode, thereby effectively improving the color deviation of the light emitting display of the display panel and improving the display effect of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. Throughout the accompanying drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and the originals and elements are not necessarily drawn to scale.

[0024] Figure 1 A schematic cross-sectional structure diagram of a display panel provided in an embodiment of the present application is shown;

[0025] Figure 2 A schematic cross-sectional structure diagram of a heat-absorbing and luminescent layer provided in an embodiment of the present application is shown;

[0026] Figure 3 A schematic cross-sectional structure diagram of another heat-absorbing and luminescent layer provided in an embodiment of the present application is shown;

[0027] Figure 4 A schematic cross-sectional structure diagram of another heat-absorbing and luminescent layer provided in an embodiment of the present application is shown;

[0028] Figure 5A schematic cross-sectional structure diagram of another heat-absorbing and luminescent layer provided in an embodiment of the present application is shown;

[0029] Figure 6 A schematic diagram showing the potential of the contact surface between different structures in a heat-absorbing and luminescent layer provided in an embodiment of the present application is shown;

[0030] Figure 7 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present application is shown;

[0031] Figure 8 A flow chart showing a method for manufacturing a display panel provided in an embodiment of the present application is shown;

[0032] Fig. 9 A schematic diagram of a display device provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0033] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0034] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0035] As described in the background technology, with the continuous development of display technology, users are provided with better and better visual experience.

[0036] With the development of light-emitting diode (LED), Mini-LED (Mini-light-emitting diode) and Micro-LED (Micro-light-emitting diode) have become the main components of the next generation display technology due to factors such as cost and display effect. Mini-LED or Micro-LED display panels are lower in cost, thinner, have large-scale mass production capabilities, and have longer lifespans and lower power consumption, and have attracted the attention of major panel manufacturers.

[0037] However, due to problems in the manufacturing process of Mini-LED or Micro-LED display panels, the light-emitting display of the display panel often produces a certain color cast, such as yellowish or bluish, which affects the display effect of the display panel.

[0038] In the display panel, due to problems with the material itself, the luminous efficiency of red LEDs is lower than that of green and blue LEDs, and the increase in temperature during the light-emitting process will cause the luminous efficiency to decrease, resulting in serious color shift.

[0039] In order to solve the above technical problems, the embodiment of the present application provides a display panel and a manufacturing method thereof, and a display device, wherein the display panel includes: a driving substrate; a light emitting diode group located on one side of the driving substrate; the light emitting diode group includes a red light emitting diode, a green light emitting diode and a blue light emitting diode; an encapsulation layer located on the side of the light emitting diode group away from the driving substrate; an endothermic luminescent layer located between the encapsulation layer and the driving substrate; the red light emitting diode is in contact with the endothermic luminescent layer; the endothermic luminescent layer includes a first conductive material and a second conductive material, the first conductive material is connected to the negative electrode of the power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive electrode of the power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the endothermic luminescent layer includes a third material that emits red light. That is, the present application utilizes the endothermic luminescent layer to absorb the heat of the red light emitting diode to produce thermoluminescence, which can not only increase the luminous brightness of the red light emitting diode, but also reduce the luminous temperature of the red light emitting diode, and reduce the luminous efficiency attenuation of the red light emitting diode, thereby effectively improving the color deviation of the light emitting display of the display panel and improving the display effect of the display panel.

[0040] In order to better understand the technical solution and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

[0041] See also Figure 1 As shown, Figure 1 The cross-sectional structure diagram of a display panel provided in an embodiment of the present application is as follows. A display panel provided in an embodiment of the present application includes:

[0042] Driving substrate 1;

[0043] A light emitting diode group located on one side of the driving substrate 1; the light emitting diode group includes a red light emitting diode 2, a green light emitting diode 3 and a blue light emitting diode 4;

[0044] The packaging layer 5 is located on the side of the light emitting diode group away from the driving substrate 1;

[0045] The heat-absorbing luminescent layer 6 is located between the encapsulation layer 5 and the driving substrate 1; the red light-emitting diode 2 is in contact with the heat-absorbing luminescent layer 6; the heat-absorbing luminescent layer 6 includes a first conductive material and a second conductive material, the first conductive material is connected to the negative electrode of the power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive electrode of the power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat-absorbing luminescent layer 6 includes a third material that emits red light.

[0046] That is, in the embodiment of the present application, the heat-absorbing luminescent layer 6 can be utilized to absorb the heat of the red LED 2 to produce thermoluminescence, which can not only increase the luminous brightness of the red LED 2, but also reduce the luminous temperature of the red LED and reduce the attenuation of the luminous efficiency of the red LED 2, thereby effectively improving the color cast of the display panel and enhancing the display effect of the display panel.

[0047] Specifically, in the embodiment of the present application, the material of the driving substrate 1 may include glass or transparent ceramic or transparent plastic or various flexible or bendable materials, for example, polymer resins, such as polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate (PC) or cellulose acetate propionate (CAP). When the driving substrate 1 is a flexible material, the display panel provided in the embodiment of the present application may include a flexible display panel, which is conducive to realizing various new display forms such as folding screens and curling screens. The working scenarios of folding screens, curling screens, etc. include luminous displays in a bent state.

[0048] In addition, the encapsulation layer 5 located on the side of the light-emitting diode group away from the driving substrate 1 is used to prevent the display panel from being damaged by external water and oxygen. The encapsulation layer 5 can be a structure in which an inorganic layer, an organic layer and an inorganic layer are stacked in sequence. The embodiment of the present application is not specifically limited here, and can be specifically set by technicians in this field according to actual conditions.

[0049] In actual production, the luminous efficiency of the three types of lights in the LED group located on one side of the driving substrate 1 is not equal, that is, the luminous efficiency of the red LED 2, the green LED 3 and the blue LED 4 is not exactly the same. Generally speaking, the luminous efficiency of the red LED 2 is relatively low, which will cause the green LED 3 and the blue LED 4 to emit stronger light, resulting in a cyan (green + blue) color shift in the picture. In order to avoid too large a brightness difference between the red LED 2, the green LED 3 and the blue LED 4, it is necessary to increase the driving current of the red LED 2 or the duty cycle of the driving current. The larger driving current and duty cycle will cause the brightness of the red LED 2 to decay faster than that of the blue and green LEDs. As the temperature of the red LED 2 rises after lighting, the luminous efficiency of the red LED 2 further decays, which may exceed 50%.

[0050] Therefore, in the embodiment of the present application, a heat-absorbing luminescent layer 6 in contact with the red light-emitting diode 2 can be arranged between the encapsulation layer 5 and the driving substrate 1, so as to reduce the temperature of the red light-emitting diode 2 and improve its luminous efficiency. In addition, this layer can absorb heat and emit light, thereby increasing the luminous brightness of the red light-emitting diode 2 and compensating for the low luminous efficiency of the red light-emitting diode 2.

[0051] Specifically, due to the contact between different conductive materials, electron diffusion will occur, always diffusing from the low work function material to the high work function material. When equilibrium is reached at ambient temperature, a contact potential will be generated, with the low work function metal at a positive potential and the high work function metal at a negative potential. If current passes through, the contact surface will heat up when electrons flow from the positive potential to the negative potential, and the contact surface will absorb heat when electrons flow from the negative potential to the positive potential.

[0052] Therefore, in the examples of this application, see Figure 2 As shown, Figure 2 A schematic diagram of the cross-sectional structure of a heat-absorbing luminescent layer provided in an embodiment of the present application, the heat-absorbing luminescent layer 6 may include a first conductive material 11 and a second conductive material 12, the first conductive material 11 is connected to the negative pole of the power supply, and the second conductive material 12 is electrically connected to the first conductive material 11, that is, at this time, electrons flow from the first conductive material 11 to the second conductive material 12.

[0053] At the same time, since the work function of the first conductive material 11 is greater than the work function of the second conductive material 12, that is, at this time, electrons flow from the high work function first conductive material 11 at a negative potential to the low work function second conductive material 12 at a positive potential, the contact surface absorbs heat when electrons flow from the negative potential to the positive potential.

[0054] In addition, the heat-absorbing luminescent layer 6 includes a third material 13 that emits red light, so that it can emit light while absorbing heat, reduce the temperature of the red light-emitting diode 2, and increase the luminous brightness of the red light-emitting diode 2, thereby improving its luminous efficiency, so as to effectively improve the color deviation of the light-emitting display of the display panel and enhance the display effect of the display panel. Optionally, an electrode material can be provided on the side of the third material 13 close to the positive electrode, so that the third material 13 can emit light under the action of current.

[0055] In one possible implementation, see Figure 3 As shown, Figure 3 A schematic diagram of a cross-sectional structure of another heat-absorbing and luminescent layer provided in an embodiment of the present application, wherein the first conductive material 11 provided in the embodiment of the present application comprises a first metal copper 111, and the second conductive material 12 comprises a metal barium 121, the first metal copper 111 and the metal barium 121 are stacked, the first metal copper 111 is connected to the negative electrode of the power supply, and the metal barium 121 is located on a side of the first metal copper 111 away from the negative electrode of the power supply;

[0056] The second conductive material 12 includes a second copper metal 122, the first conductive material 11 includes a platinum metal 112, the second copper metal 122 and the platinum metal 112 are stacked, the second copper metal 122 is connected to the positive electrode of the power supply, and the platinum metal 112 is located on the side of the second copper metal 122 away from the positive electrode of the power supply. That is, in the embodiment of the present application, the first conductive material 11 can be connected to the negative electrode of the power supply, and the second conductive material 12 is electrically connected to the first conductive material 11; and / or, the second conductive material 12 can be connected to the positive electrode of the power supply, and the first conductive material 11 is electrically connected to the second conductive material 12.

[0057] Since the work function of metal barium is 2.5eV, the work function of metal copper is 4.65eV, and the work function of metal platinum is 5.65eV. Therefore, on the contact surface between the first metal copper 111 and the metal barium 121 at the negative power supply terminal, electrons flow from the first metal copper 111 with a high work function to the metal barium 121 with a low work function, that is, electrons flow from a negative potential to a positive potential, so the contact surface absorbs heat; on the contact surface between the second metal copper 122 and the metal platinum 112 at the positive power supply terminal, electrons also flow from the metal platinum 112 with a high work function to the second metal copper 122 with a low work function, that is, electrons also flow from a negative potential to a positive potential, so the contact surface also absorbs heat, thereby achieving heat absorption of the heat-absorbing luminescent layer, slowing down the reduction in luminous efficiency caused by the temperature increase of the red light-emitting diode, and effectively improving the color deviation of the display panel.

[0058] It should be noted that Figure 3 Only one possible relative position between the first conductive material 11, the second conductive material 12 and the third material 13 is shown, and other stacking methods may be possible. The embodiment of the present application is not specifically limited here, and the specific setting can be made by those skilled in the art according to actual conditions.

[0059] In one possible implementation, see Figure 4 As shown, Figure 4 A schematic diagram of the cross-sectional structure of another heat-absorbing and luminescent layer provided in an embodiment of the present application, the third material 13 provided in the embodiment of the present application may include a P-type semiconductor material 131 in contact with the first conductive material 11, and an N-type semiconductor material 132 in contact with the second conductive material 12; the N-type semiconductor material 132 and the P-type semiconductor material 131 form a PN junction 133 so as to emit light under the action of electric current.

[0060] Optionally, the N-type semiconductor material 132 provided in the embodiment of the present application may include N-type gallium phosphide or N-type gallium arsenic phosphide; the P-type semiconductor material 131 may include P-type gallium phosphide or P-type gallium arsenic phosphide. That is, the red light-emitting material gallium phosphide or gallium arsenic phosphide can be used to compensate for the defect of insufficient red light emission of the red light emitting diode.

[0061] In one possible implementation, see Figure 5 As shown, Figure 5 A schematic diagram of the cross-sectional structure of another heat-absorbing and luminescent layer provided in an embodiment of the present application, wherein the N-type semiconductor material 132 provided in the embodiment of the present application may include a heavily doped N-type semiconductor material 1321 and a low-doped N-type semiconductor material 1322 stacked in sequence; the P-type semiconductor material 131 may include a heavily doped P-type semiconductor material 1311 and a low-doped P-type semiconductor material 1312 stacked in sequence.

[0062] For example, see Figure 6 As shown, Figure 6 Schematic diagram showing the potential of the contact surface between different structures in an endothermic luminescent layer provided in an embodiment of the present application, when the heavily doped N-type semiconductor material 1321 is heavily doped N-type gallium phosphide (GaP), the low-doped N-type semiconductor material 1322 is low-doped N-type gallium phosphide, the heavily doped P-type semiconductor material 1311 is heavily doped P-type gallium phosphide, and the low-doped P-type semiconductor material 1312 is low-doped P-type gallium phosphide:

[0063] Electrons flow from the negative electrode to the positive electrode, and at the contact surface of the first metal copper 111 and the metal barium 121 at the negative end of the power supply ( Figure 6On ab), electrons flow from negative potential to positive potential, and this contact surface absorbs heat; there is no potential difference at the contact surface (bc) between the metal barium 121 and the heavily doped N-type gallium phosphide 1321, which is an ohmic contact. Because the resistance is very small, only a small amount of heat is generated; there is also concentrated electron diffusion at the contact surface (cd) between the heavily doped N-type gallium phosphide 1321 and the low-doped N-type gallium phosphide 1322, and the potential difference generated is relatively low. The electron current flows from the positive potential to the negative potential, and this contact surface generates heat, but the heat generated is relatively small; at the PN junction (de), electrons and holes combine to emit light (energy consumption and heat generation are equivalent); there is concentrated hole diffusion at the contact surface (ef) between the low-doped P-type gallium phosphide 1312 and the heavily doped P-type gallium phosphide 1311, and the potential difference generated is also relatively low. The hole current flows from the negative potential to the positive potential, and this contact surface generates heat, but the heat generated is relatively small (because the movement of holes is equivalent to the reverse movement of electrons, in Figure 6 In order to express the electric potential, the equivalent electron current method is used); the contact surface (fg) between the heavily doped P-type gallium phosphide 1311 and the metal platinum 112 has no potential difference and is an ohmic contact. Because the resistance is very small, only a small amount of heat is generated; on the contact surface (gh) between the high work function metal platinum 112 and the second metal copper 122 of the positive end lead, electrons also flow from the negative potential to the positive potential, and the contact surface absorbs heat.

[0064] Therefore, the heat-absorbing luminescent layer generally appears to absorb heat, which is beneficial to reducing the temperature of the red light-emitting diode.

[0065] Optional, see Figure 5 and Figure 7 As shown, Figure 7 A schematic diagram of the cross-sectional structure of another display panel provided in an embodiment of the present application, wherein the low-doped N-type semiconductor material 1322 is located on a side of the heavily-doped N-type semiconductor material 1321 away from the driving substrate 1; the low-doped P-type semiconductor material 1312 is located on a side of the heavily-doped P-type semiconductor material 1311 away from the encapsulation layer 5.

[0066] That is, the heat-absorbing luminescent layer 6 provided in the embodiment of the present application can be located between the red light-emitting diode 2 and the encapsulation layer 5, and the positive and negative electrodes of the red light-emitting diode 2 are welded to the positive and negative power supplies on the driving substrate 1. The positive and negative electrodes of the heat-absorbing luminescent layer 6 can be welded to the positive and negative power supplies on the driving substrate 1 through the first groove 61 and the second groove 62, respectively. In order to avoid short circuit, insulating material can be arranged on the side walls of the first groove 61 and the second groove 62, thereby realizing the heat-absorbing luminescence of the heat-absorbing luminescent layer 6.

[0067] It should be noted that the red light-emitting diode 2 and the heat-absorbing luminescent layer 6 can also be connected to the positive and negative power supplies on the driving substrate 1 in other ways. For example, the red light-emitting diode 2 and the heat-absorbing luminescent layer 6 can be separately bound to different positive and negative power supply pads on the driving substrate 1, or the heat-absorbing luminescent layer 6 can be connected to the positive and negative power supplies on the driving substrate 1 by a bridge. The embodiments of the present application are not specifically limited here, and can be specifically set by technicians in this field according to actual conditions.

[0068] Optional, see Figure 7 As shown, the display panel provided by the embodiment of the present application may further include a color conversion layer 9 located on the side of the red light-emitting diode 2 away from the driving substrate 1; the heat-absorbing luminescent layer 6 is located between the color conversion layer 9 and the red light-emitting diode 2. The color conversion layer 9 is provided so that the light emitted by the light-emitting diode group can be purer, thereby improving the display effect of the display panel and enhancing the user experience.

[0069] In one possible implementation, see Figure 1 As shown, the heat-absorbing luminescent layer 6 provided in the embodiment of the present application can be located between the red light-emitting diode 2 and the driving substrate 1, and the transmittance of the red light-emitting diode is greater than or equal to a preset threshold.

[0070] That is, the heat-absorbing luminescent layer 6 and the red light-emitting diode 2 can be formed by sharing the same substrate, and the positive and negative electrodes of the heat-absorbing luminescent layer 6 are welded to the positive and negative power supplies on the driving substrate 1. The positive and negative electrodes of the red light-emitting diode 2 can be welded to the positive and negative power supplies on the driving substrate 1 through the first groove 61 and the second groove 62, respectively. In order to avoid short circuit, insulating material can be provided on the side walls of the first groove 61 and the second groove 62, thereby realizing the heat-absorbing luminescence of the heat-absorbing luminescent layer 6.

[0071] It should be noted that the red light-emitting diode 2 and the heat-absorbing luminescent layer 6 can also be connected to the positive and negative power supplies on the driving substrate 1 in other ways. For example, the red light-emitting diode 2 and the heat-absorbing luminescent layer 6 can be separately bound to different positive and negative power pads on the driving substrate 1, or the red light-emitting diode 2 can be connected to the positive and negative power supplies on the driving substrate 1 by means of a bridge. The embodiments of the present application are not specifically limited here, and can be specifically set by technicians in this field according to actual conditions.

[0072] In addition, in order to allow the light emitted by the heat-absorbing luminescent layer 6 to pass through the red light-emitting diode 2, the transmittance of the red light-emitting diode may be greater than or equal to a preset threshold. Optionally, the substrate of the red light-emitting diode 2 may include a sapphire substrate, which is light-transmissive. The buffer layer on the substrate may be a gallium nitride material, which is a semi-transparent material, so that the heat-absorbing luminescent layer 6 can emit light through the red light-emitting diode 2.

[0073] It should be noted that the light output of the above-mentioned heat absorption and luminescent layer 6 depends on the transmittance of the material and the light intensity of the heat absorption and luminescent layer 6. The embodiment of the present application does not make any specific limitations here, and can be specifically set by those skilled in the art according to actual conditions.

[0074] In addition, see Figure 1 and Figure 7 As shown, the display panel provided in the embodiment of the present application may further include a first insulating layer 7 covering the light emitting diode group, and a black matrix (BM) 8 between the encapsulation layer 5 and the first insulating layer 7 .

[0075] The embodiment of the present application provides a display panel, which includes: a driving substrate; a light emitting diode group located on one side of the driving substrate; the light emitting diode group includes a red light emitting diode, a green light emitting diode and a blue light emitting diode; an encapsulation layer located on the side of the light emitting diode group away from the driving substrate; an endothermic luminescent layer located between the encapsulation layer and the driving substrate; the red light emitting diode is in contact with the endothermic luminescent layer; the endothermic luminescent layer includes a first conductive material and a second conductive material, the first conductive material is connected to the negative electrode of the power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive electrode of the power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the endothermic luminescent layer includes a third material that emits red light. That is, the present application utilizes the endothermic luminescent layer to absorb the heat of the red light emitting diode to produce thermoluminescence, which can not only increase the light emitting brightness of the red light emitting diode, but also reduce the light emitting temperature of the red light emitting diode, and reduce the light emitting efficiency attenuation of the red light emitting diode, thereby effectively improving the color deviation of the light emitting display of the display panel and improving the display effect of the display panel.

[0076] See also Figure 8 As shown, Figure 8 A flow chart of a method for manufacturing a display panel provided in an embodiment of the present application includes:

[0077] S101: providing a driving substrate;

[0078] S102: forming a light emitting diode group and a heat absorbing light emitting layer and binding them on the driving substrate; the light emitting diode group includes a red light emitting diode, a green light emitting diode and a blue light emitting diode;

[0079] S103: forming a packaging layer on a side of the light emitting diode group away from the driving substrate; the heat absorbing and luminescent layer is located between the packaging layer and the driving substrate, and the red light emitting diode is formed in contact with the heat absorbing and luminescent layer;

[0080] The heat-absorbing luminescent layer includes a first conductive material and a second conductive material, the first conductive material is connected to the negative pole of the power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive pole of the power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat-absorbing luminescent layer includes a third material that emits red light.

[0081] Optionally, a semiconductor layer is formed on one side of the substrate of the red light-emitting diode; and forming the heat-absorbing luminescent layer includes: forming the heat-absorbing luminescent layer on the same side as the semiconductor layer by vapor phase epitaxy or liquid phase epitaxial growth.

[0082] See Figure 7 As shown, when the heat-absorbing luminescent layer 6 is to be formed between the red light-emitting diode 2 and the encapsulation layer 5, the heat-absorbing luminescent layer 6 can be formed by vapor phase epitaxy or liquid phase epitaxial growth.

[0083] For example, gallium arsenic phosphide (GaAsP) or gallium phosphide (GaP) can be formed by vapor phase epitaxy or liquid phase epitaxy. The common vapor phase epitaxy process adopts the CVD (Chemical Vapor Deposition) method (Ga, HCl, AsH3 and H2 method and Ga, AsCl3 and N2 method).

[0084] The liquid phase epitaxy process is to cover the substrate surface with a Ga or GaAs molten pool, and then grow the epitaxial layer by cooling. It can also use a temperature gradient growth method or an electric epitaxy method with direct current applied. At present, the gallium arsenic phosphide (GaAsP) liquid phase epitaxy method is mainly used to manufacture gallium arsenide double heterojunction lasers and solar cells, etc., and a small amount is used to manufacture devices (microwave devices). Therefore, gallium arsenic phosphide (GaAsP) in the liquid phase epitaxy process meets the coating requirements of this application.

[0085] Optionally, a semiconductor layer is formed on one side of the substrate of the red light emitting diode; and forming the heat-absorbing luminescent layer comprises: forming the heat-absorbing luminescent layer on a side of the substrate away from the semiconductor layer by electrodeposition.

[0086] See Figure 1 As shown, when the heat-absorbing luminescent layer 6 is to be formed between the red light-emitting diode 2 and the driving substrate 1 , the heat-absorbing luminescent layer 6 can be formed by electrodeposition.

[0087] That is, nano-gallium arsenic phosphide or gallium phosphide film is prepared by current deposition method to meet the requirements of micro-LED (micro light-emitting diode) in this case.

[0088] The embodiment of the present application provides a method for manufacturing a display panel, the method comprising: providing a driving substrate; forming a light emitting diode group and a heat absorbing light emitting layer and binding them on the driving substrate; the light emitting diode group comprises a red light emitting diode, a green light emitting diode and a blue light emitting diode; forming a packaging layer on the side of the light emitting diode group away from the driving substrate; the heat absorbing light emitting layer is located between the packaging layer and the driving substrate, and the red light emitting diode is formed in contact with the heat absorbing light emitting layer; the heat absorbing light emitting layer comprises a first conductive material and a second conductive material, the first conductive material is connected to the negative electrode of the power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive electrode of the power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat absorbing light emitting layer comprises a third material that emits red light. That is, the present application utilizes the heat absorbing light emitting layer to absorb the heat of the red light emitting diode to produce thermoluminescence, which can not only increase the light emitting brightness of the red light emitting diode, but also reduce the light emitting temperature of the red light emitting diode, and reduce the light emitting efficiency attenuation of the red light emitting diode, thereby effectively improving the color deviation of the light emitting display of the display panel and improving the display effect of the display panel.

[0089] See also Fig. 9 As shown, it is a schematic diagram of the planar structure of a display device provided in an embodiment of the present application. As can be seen from the figure, the display device 99 includes a display panel 1111, and the display panel 1111 is the display panel described in any of the above embodiments. The display device 99 provided in the embodiment of the present application can be a mobile phone, a tablet, a computer, a television, a vehicle-mounted display device, an instrument display device, and other display devices with display functions, which are not specifically limited in the embodiment of the present application. The display device 99 provided in the embodiment of the present application has the beneficial effects of the display panel provided in the embodiment of the present application. For details, please refer to the specific description of the display panel in the above embodiments, and the embodiment of the present application will not be repeated here.

[0090] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the method embodiment, since it is basically similar to the display panel embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the display panel embodiment.

[0091] The above is only a preferred implementation of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.

Claims

1. A display panel, characterized in that: include: Driver substrate; A light emitting diode group located on one side of the driving substrate; The light emitting diode group includes a red light emitting diode, a green light emitting diode and a blue light emitting diode; A packaging layer located on a side of the light emitting diode group away from the driving substrate; a heat-absorbing luminescent layer located between the encapsulation layer and the driving substrate; the red light-emitting diode is in contact with the heat-absorbing luminescent layer; the heat-absorbing luminescent layer comprises a first conductive material and a second conductive material, the first conductive material is connected to the negative pole of a power supply, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to the positive pole of a power supply, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat-absorbing luminescent layer comprises a third material that emits red light, the third material is in contact with at least one of the first conductive material and the second conductive material, so as to emit red light under the action of an electric current between the first conductive material and the second conductive material.

2. The display panel according to claim 1, characterized in that: The first conductive material includes a first metal copper, the second conductive material includes a metal barium, the first metal copper and the metal barium are stacked, the first metal copper is connected to the negative electrode of the power supply, and the metal barium is located on a side of the metal copper away from the negative electrode of the power supply; The second conductive material includes a second metal copper, the first conductive material includes metal platinum, the second metal copper and the metal platinum are stacked, the second metal copper is connected to the positive pole of the power supply, and the metal platinum is located on a side of the second metal copper away from the positive pole of the power supply.

3. The display panel according to claim 2, characterized in that: The third material includes a P-type semiconductor material in contact with the first conductive material and an N-type semiconductor material in contact with the second conductive material; the N-type semiconductor material and the P-type semiconductor material form a PN junction.

4. The display panel according to claim 3, characterized in that: The N-type semiconductor material includes N-type gallium phosphide or N-type gallium arsenic phosphide; the P-type semiconductor material includes P-type gallium phosphide or P-type gallium arsenic phosphide.

5. The display panel according to claim 3, characterized in that: The N-type semiconductor material includes a heavily doped N-type semiconductor material and a low-doped N-type semiconductor material stacked in sequence; The P-type semiconductor material includes a heavily doped P-type semiconductor material and a low-doped P-type semiconductor material stacked in sequence; The low-doped N-type semiconductor material is located on a side of the heavily-doped N-type semiconductor material away from the driving substrate; The low-doped P-type semiconductor material is located on a side of the heavily-doped P-type semiconductor material away from the encapsulation layer.

6. The display panel according to claim 1, characterized in that: Also includes: A color conversion layer located on a side of the red light emitting diode away from the driving substrate; The heat-absorbing luminescent layer is located between the color conversion layer and the red light-emitting diode.

7. The display panel according to claim 1, characterized in that: The heat-absorbing luminescent layer is located between the red light-emitting diode and the driving substrate; The transmittance of the red light emitting diode is greater than or equal to a preset threshold.

8. The display panel according to claim 7, characterized in that: The substrate of the red light emitting diode includes a sapphire substrate.

9. A method for manufacturing a display panel, characterized in that: include: Providing a drive substrate; forming a light emitting diode group and a heat absorbing and luminescent layer and binding them on the driving substrate; The light emitting diode group includes a red light emitting diode, a green light emitting diode and a blue light emitting diode; forming a packaging layer on a side of the light emitting diode group away from the driving substrate; The heat-absorbing and luminescent layer is located between the encapsulation layer and the driving substrate, and the red light-emitting diode is formed in contact with the heat-absorbing and luminescent layer; The heat-absorbing luminescent layer includes a first conductive material and a second conductive material, the first conductive material is connected to a negative power source, the second conductive material is electrically connected to the first conductive material, and / or the second conductive material is connected to a positive power source, the first conductive material is electrically connected to the second conductive material, and the work function of the first conductive material is greater than the work function of the second conductive material; the heat-absorbing luminescent layer includes a third material that emits red light, the third material is in contact with at least one of the first conductive material and the second conductive material, so as to emit red light under the action of an electric current between the first conductive material and the second conductive material.

10. The method according to claim 9, characterized in that A semiconductor layer is formed on one side of the substrate of the red light emitting diode; the step of forming the heat absorbing and luminescent layer comprises: The heat absorbing and luminescent layer is formed on the same side as the semiconductor layer by vapor phase epitaxy or liquid phase epitaxy.

11. The method according to claim 9, characterized in that A semiconductor layer is formed on one side of the substrate of the red light emitting diode; the step of forming the heat absorbing and luminescent layer comprises: The heat-absorbing and luminescent layer is formed on a side of the substrate away from the semiconductor layer by electrodeposition.

12. A display device, characterized in that: Comprising a display panel as described in any one of claims 1-8.

Images