Light-emitting device including cover layer and method for manufacturing the same

Abstract

An optoelectronic device having multiple layers, the optoelectronic device comprising: a first cover layer (CPL), the first CPL comprising a first CPL material and disposed in a first emission region, the first emission region being configured to emit photons having a first wavelength spectrum characterized by a first starting wavelength; and a second CPL comprising a second CPL material and disposed in a second emission region, the second emission region being configured to emit photons having a second wavelength spectrum characterized by a second starting wavelength; wherein at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength shorter than the first starting wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength shorter than the second starting wavelength.

Description

[0001] Related applications

[0002] This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 953,442, filed on December 24, 2019, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates to optoelectronic devices, and in particular to optoelectronic devices having multiple emitting regions, each emitting region including a first electrode and a second electrode separated by a semiconductor layer and having a capping layer having optical properties tuned to the wavelength range of the emission spectrum produced by the emitting region. Background Art

[0004] In optoelectronic devices, such as organic light-emitting diodes (OLEDs), at least one semiconducting layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, which migrate toward each other through the at least one semiconducting layer. When the hole and electron pair combine, a photon can be emitted.

[0005] An OLED display panel may comprise a plurality of (sub)pixels, each pixel having an associated electrode pair. The various layers and coatings of such panels are typically formed by vacuum-based deposition techniques.

[0006] In some applications, it may be desirable to provide each (sub)pixel of the panel with a conductive coating and / or electrode coating in a pattern across one or both of its lateral and cross-sectional aspects during the OLED manufacturing process by selectively depositing a conductive coating to form device features such as, but not limited to, electrodes and / or conductive elements electrically coupled to electrodes.

[0007] In some non-limiting applications, one method of doing this involves inserting a fine metal mask (FMM) during the deposition of the electrode material and / or the conductive elements electrically coupled to the electrode material. However, the materials typically used as electrodes have relatively high evaporation temperatures, which impacts the ability to reuse the FMM and / or the pattern accuracy that can be achieved, while also increasing cost, effort, and complexity.

[0008] In some non-limiting examples, one method of doing so involves depositing electrode material and thereby removing unwanted areas thereof through a laser drilling process to form a pattern. However, the removal process often involves the generation and / or presence of debris, which can affect the yield of the manufacturing process.

[0009] Further, such methods may not be suitable for some applications and / or some devices having certain terrain characteristics.

[0010] In some applications, it may be desirable to provide an optoelectronic device having multiple emitting regions, each emitting region having optical properties tuned to the spectrum of wavelengths emitted thereby. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Examples of the present disclosure will now be described with reference to the following drawings, in which like reference numerals in different drawings indicate like elements and / or, in some non-limiting examples, similar and / or corresponding elements, and in which:

[0012] Figure 1 is a block diagram of a cross-sectional aspect of an example electroluminescent device according to examples in the present disclosure;

[0013] Figure 2 yes Figure 1 a cross-sectional view of an example backplane layer of a substrate of a device of FIG. 1 , the cross-sectional view showing a thin film transistor (TFT) embodied therein;

[0014] Figure 3 For example, it can be Figure 2 A circuit diagram of an example circuit provided by one or more of the TFTs shown in the backplane layer;

[0015] Figure 4 yes Figure 1 A cross-sectional view of a device;

[0016] Figure 5 yes Figure 1 a cross-sectional view of an example version of a device of claim 1, the cross-sectional view illustrating at least one example pixel defining layer (PDL) supporting deposition of at least one second electrode of the device;

[0017] Figure 6 is an example energy distribution diagram illustrating relative energy states of adatoms adsorbed to a surface according to examples in the present disclosure;

[0018] Figure 7 is a diagram showing an example of a method for Figure 1 Schematic diagram of an example process for pattern-depositing a selective coating on an exposed surface of an underlying material in an example version of an apparatus;

[0019] Figure 8 is a schematic diagram illustrating an example process for depositing a conductive coating in a first pattern on an exposed layer surface comprising Figure 7 a deposition pattern of a selective coating, wherein the selective coating is a nucleation inhibition coating (NIC);

[0020] Figures 9A-9D The example shown in the present disclosure is applicable to Figure 7Schematic diagram of an example open mask of a process of claim 1, wherein the open mask has holes therein;

[0021] Figure 10A is an example of an embodiment of the present disclosure with additional example deposition steps Figure 1 Example version of the device;

[0022] Figure 10B yes Figure 10A An example version of the device wherein the first portion comprises a discontinuous coating;

[0023] Figure 10C yes Figure 10B a plan view of a first portion of the device;

[0024] Figure 10D yes Figure 10A The example version of the apparatus further includes a third part;

[0025] Figure 10E yes Figure 10D a plan view of a portion of the device;

[0026] Figure 11A is a schematic diagram illustrating an example process for pattern-depositing a selective coating as a nucleation promoting coating (NPC) on an exposed layer surface comprising Figure 7 The deposition pattern of the selective coating;

[0027] Figure 11B is a schematic diagram illustrating an example process for patterned deposition of a conductive coating on an exposed layer surface comprising Figure 11A The deposition pattern of NPCs;

[0028] Figure 12A is a diagram showing an example of a method for Figure 1 Schematic diagram of an example process for patterned deposition of NPCs on an exposed surface of an underlying material in an example version of an apparatus;

[0029] Figure 12B is a schematic diagram illustrating an example process for patterned deposition of NIC on an exposed layer surface comprising Figure 12A The deposition pattern of NPCs;

[0030] Figure 12C is a schematic diagram illustrating an example process for patterned deposition of a conductive coating on an exposed layer surface comprising Figure 12B The deposition pattern of NIC;

[0031] Figures 13A-13C is a diagram showing an example of a method for Figure 1Schematic diagram of example stages of an example printing process for patterned deposition of a selective coating on an exposed layer surface in an example version of an apparatus;

[0032] Figure 14 The present invention is a plan view showing an example of an embodiment of the present invention. Figure 1 Schematic diagram of an example patterned electrode version of the device;

[0033] Figure 15 It shows Figure 14 A schematic diagram of an example cross-sectional view of a device taken along line 15-15;

[0034] Figure 16A The present invention is a plan view showing an example of an embodiment of the present invention. Figure 1 Schematic diagrams of multiple example patterns of electrodes for example versions of the device;

[0035] Figure 16B It shows Figure 16A A schematic diagram of an example cross-sectional view of the device at an intermediate stage taken along line 16B-16B;

[0036] Figure 16C It shows Figure 16A A schematic diagram of an example cross-sectional view of a device taken along line 16C-16C;

[0037] Figure 17 is a diagram showing an example patterned auxiliary electrode according to an example of the present disclosure. Figure 1 a schematic diagram of a cross-sectional view of an example version of the apparatus;

[0038] Figure 18A The present invention is shown in a plan view according to an example of Figure 1 A schematic diagram of an example arrangement of emitting regions and / or non-emitting regions in an example version of an apparatus;

[0039] Figures 18B-18D They each showed Figure 18A Schematic diagram of a section of a portion of FIG, showing an example auxiliary electrode covering a non-emitting area according to an example in the present disclosure;

[0040] Figure 19 is a schematic diagram showing an example pattern of an auxiliary electrode covering at least one emission region and at least one non-emission region according to an example of the present disclosure in a plan view;

[0041] Figure 20A The present invention is a plan view showing a plurality of groups of emitting areas arranged in a diamond shape according to an example of the present invention. Figure 1 a schematic diagram of an example pattern of an example version of a device;

[0042] Figure 20B It shows Figure 20A A schematic diagram of an example cross-sectional view of a device taken along line 20B-20B;

[0043] Figure 20C It shows Figure 20A A schematic diagram of an example cross-sectional view of a device taken along line 20C-20C;

[0044] Figure 21 is a diagram showing an example of a method of depositing a substrate according to an embodiment of the present disclosure with additional example deposition steps. Figure 4 a schematic diagram of an example cross-sectional view of an example version of a device;

[0045] Figure 22 is a diagram showing an example of a method of depositing a substrate according to an embodiment of the present disclosure with additional example deposition steps. Figure 4 a schematic diagram of an example cross-sectional view of an example version of a device;

[0046] Figure 23 is a diagram showing an example of a method of depositing a substrate according to an embodiment of the present disclosure with additional example deposition steps. Figure 4 a schematic diagram of an example cross-sectional view of an example version of a device;

[0047] Figure 24 is a diagram showing an example of a method of depositing a substrate according to an embodiment of the present disclosure with additional example deposition steps. Figure 4 a schematic diagram of an example cross-sectional view of an example version of a device;

[0048] Figures 25A-25C is a diagram showing a method for selectively depositing and subsequently removing a substrate according to an example of the present disclosure. Figure 1 a schematic diagram of example stages of an example process for patterning a conductive coating on an exposed layer surface of an example version of an apparatus;

[0049] Figure 26A The present invention is shown in a plan view according to an example of Figure 1 A schematic diagram of an example of a transparent version of a device comprising at least one example pixel region and at least one example light-transmitting region, and at least one auxiliary electrode;

[0050] Figure 26B It shows Figure 26A A schematic diagram of an example cross-sectional view of a device taken along line 26B-26B;

[0051] Figure 27A The present invention is shown in a plan view according to an example of Figure 1 a schematic diagram of an example of a transparent version of a device comprising at least one example pixel region and at least one example light-transmitting region;

[0052] Figure 27B It shows Figure 27A A schematic diagram of an example cross-sectional view of a device taken along line 27B-27B;

[0053] Figure 27C It shows Figure 27A A schematic diagram of another example cross-sectional view of the device taken along line 27B-27B;

[0054] Figures 28A-28D The present invention is a method for manufacturing a Figure 1 An example version of the apparatus is provided to provide a schematic diagram of example stages of an example process for two emitting regions, each emitting region having a second electrode of a different thickness;

[0055] Figures 29A-29D FIG. 1 is a diagram showing a method for manufacturing a substrate having a sub-pixel region according to an example of the present disclosure. Figure 1 a schematic diagram of example stages of an example process for an example version of a device, wherein the sub-pixel region has a second electrode with a different thickness;

[0056] Figure 30 The example in the present disclosure is shown Figure 1 a schematic diagram of an example cross-sectional view of an example version of a device of claim 1, wherein the second electrode is coupled to the auxiliary electrode;

[0057] Figures 31A-31I is a diagram showing various examples according to the present disclosure. Figure 1 Schematic diagram of various potential behaviors of NIC at a deposition interface with a conductive coating in an example version of the device;

[0058] Figure 32 is a diagram illustrating in qualitative form the relationship between example emission spectra of a pair of example emission regions and curves of example refractive indices of corresponding covering layers covering the emission regions according to various examples of the present disclosure;

[0059] Figure 33 The present invention is qualitatively presented in accordance with various examples in the present invention. Figure 32 An example refractive index curve with Figure 32 A schematic diagram showing the relationship between corresponding curves of example extinction coefficients of corresponding covering layers;

[0060] Figure 34 The present invention is qualitatively presented in accordance with various examples in the present invention. Figure 32 An example emission spectrum with Figure 33 A schematic diagram of the relationship between the corresponding curves of the example extinction coefficients;

[0061] Figure 35 is a schematic diagram illustrating a metal coating beneath a NIC and / or conductive coating according to an example of the present disclosure;

[0062] Figures 36A-36B is shown for the Figures 28A-28B After the steps of manufacturing Figure 1 a schematic diagram of example stages of an example process of an example version of an apparatus;

[0063] Figures 37A-37E The present invention is a method for manufacturing a Figure 1 Schematic diagram of an example version of an apparatus to provide example stages of an example process for three emission regions, each emission region having a second electrode of a different thickness;

[0064] Figures 38A-38F FIG. 1 is a diagram showing a method for manufacturing a substrate having a sub-pixel region according to an example of the present disclosure. Figure 1 a schematic diagram of example stages of an example process for an example version of a device, wherein the sub-pixel region has a second electrode with a different thickness;

[0065] Figures 39A-39C is a diagram showing an example according to the present disclosure Figure 1 a schematic diagram of an example version of the apparatus; and

[0066] Figure 40 is a schematic diagram illustrating membrane nucleation according to examples in the present disclosure.

[0067] In this disclosure, for purposes of explanation rather than limitation, specific details are set forth to provide a thorough understanding of the disclosure, including but not limited to specific architectures, interfaces, and / or technologies. In some cases, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted to avoid obscuring the description of the disclosure with unnecessary detail.

[0068] Further, it should be appreciated that the block diagrams presented herein may represent conceptual views of illustrative components embodying the principles of the technology of this invention.

[0069] Thus, where appropriate, system and method components have been represented by conventional symbols in the drawings, and only those specific details relevant to understanding the examples of the present disclosure are shown so as not to obscure the disclosure with details that would be apparent to one of ordinary skill in the art having the benefit of the description herein.

[0070] Any drawings provided herein may not be drawn to scale and should not be considered limiting the present disclosure in any way.

[0071] In some instances, any features or acts shown in dashed outline may be considered optional. Summary of the Invention

[0072] It is an object of the present disclosure to obviate or mitigate at least one of the disadvantages of the prior art.

[0073] The present disclosure discloses an optoelectronic device having multiple layers. A first cover layer (CPL) includes a first CPL material and is disposed in a first emission region. A second CPL includes a second CPL material and is disposed in a second emission region. The first emission region is configured to emit photons having a first wavelength spectrum characterized by a first starting wavelength. The second emission region is configured to emit photons having a second wavelength spectrum characterized by a second starting wavelength. At least one of the first CPL and the first CPL material (collectively referred to as CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength shorter than the first starting wavelength. At least one of the second CPL and the second CPL material (collectively referred to as CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength shorter than the second starting wavelength.

[0074] According to a broad aspect of the present disclosure, an optoelectronic device having multiple layers is disclosed, comprising: a first cover layer (CPL) comprising a first CPL material and disposed in a first emission region, the first emission region being configured to emit photons having a first wavelength spectrum characterized by a first starting wavelength; and a second CPL comprising a second CPL material and disposed in a second emission region, the second emission region being configured to emit photons having a second wavelength spectrum characterized by a second starting wavelength, wherein: at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength shorter than the first starting wavelength; and at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength shorter than the second starting wavelength.

[0075] In some non-limiting examples, the first starting wavelength may be shorter than the second starting wavelength. In some non-limiting examples, the first absorption edge wavelength is shorter than the second absorption edge wavelength.

[0076] In some non-limiting examples, the first absorption edge can be characterized by a first extinction wavelength, at which the extinction coefficient k of the CPL(m)1 is equal to a threshold, and the second absorption edge can be characterized by a second extinction wavelength, at which the extinction coefficient of the CPL(m)2 is equal to the threshold.

[0077] In some non-limiting examples, the first starting wavelength may be longer than the first absorption edge wavelength by less than at least one of about 50 nm, about 40 nm, about 35 nm, about 30 nm, about 25 nm, about 20 nm, about 15 nm, about 10 nm, about 5 nm, and about 3 nm. In some non-limiting examples, the first extinction wavelength may be the longest wavelength of at least one wavelength at which the extinction coefficient of the CPL(m)1 is equal to the threshold. In some non-limiting examples, the first derivative of the extinction coefficient of the CPL(m)1 as a function of wavelength may be negative at the first extinction wavelength. In some non-limiting examples, the extinction coefficient of the CPL(m)1 at wavelengths longer than the first extinction wavelength may be less than the threshold. In some non-limiting examples, the extinction coefficient of the CPL(m)1 at all wavelengths longer than the first extinction wavelength may be less than the threshold. In some non-limiting examples, the extinction coefficient of the CPL(m)1 at any wavelength longer than the first starting wavelength may be less than at least one of the following: about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. In some non-limiting examples, the extinction coefficient of the CPL(m)1 at a wavelength shorter than the first absorption edge wavelength may exceed at least one of the following: about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0.

[0078] In some non-limiting examples, the refractive index of the CPL(m)1 at at least one wavelength longer than the first absorption edge wavelength may exceed the refractive index of the CPL(m)1 at at least one wavelength shorter than the first absorption wavelength. In some non-limiting examples, the refractive index of the CPL(m) at at least one wavelength in the first wavelength spectrum may exceed at least one of the following: about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5.

[0079] In some non-limiting examples, the second onset wavelength may be longer than the second absorption edge wavelength by less than at least one of about 200 nm, about 150 nm, about 130 nm, about 100 nm, about 80 nm, about 70 nm, about 60 nm, about 50 nm, about 40 nm, about 35 nm, about 25 nm, about 20 nm, about 15 nm, and about 10 nm. In some non-limiting examples, the second extinction wavelength may be the longest wavelength among at least one wavelength at which the extinction coefficient of the CPL(m)2 equals the threshold. In some non-limiting examples, the first derivative of the extinction coefficient of the CPL(m)2 as a function of wavelength may be negative at the second extinction wavelength. In some non-limiting examples, the extinction coefficient of the CPL(m)2 at wavelengths longer than the second extinction wavelength may be less than the threshold. In some non-limiting examples, the extinction coefficient of the CPL(m)2 at all wavelengths longer than the second extinction wavelength may be less than the threshold. In some non-limiting examples, the extinction coefficient of the CPL(m)2 at any wavelength longer than the second starting wavelength may be less than at least one of the following: about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. In some non-limiting examples, the extinction coefficient of the CPL(m)2 at a wavelength shorter than the second absorption edge wavelength may exceed at least one of the following: about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0.

[0080] In some non-limiting examples, the refractive index of the CPL(m)2 at at least one wavelength longer than the second absorption edge wavelength may exceed the refractive index of the CPL(m)2 at at least one wavelength shorter than the second absorption edge wavelength. In some non-limiting examples, the refractive index of the CPL(m)2 at at least one wavelength in the second wavelength spectrum may exceed at least one of the following: about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5.

[0081] In some non-limiting examples, the extinction coefficient of the CPL(m)1 may be less than the threshold value at the second starting wavelength. In some non-limiting examples, the extinction coefficient of the CPL(m)1 may be less than the threshold value at all wavelengths in the second wavelength spectrum. In some non-limiting examples, the extinction coefficient of the CPL(m)1 at any wavelength in the second wavelength spectrum may be less than at least one of the following: about 0.1, about 0.09, about 0.08, about 0.05, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.001.

[0082] In some non-limiting examples, the refractive index of the CPL(m)1 for at least one wavelength in the first wavelength spectrum may exceed the refractive index of the CPL(m)1 for at least one wavelength in the second wavelength spectrum. In some non-limiting examples, the refractive index of the CPL(m)2 for at least one wavelength in the second wavelength spectrum may exceed the refractive index of the CPL(m)2 for at least one wavelength in the first wavelength spectrum. In some non-limiting examples, the refractive index of the CPL(m)1 for at least one wavelength in the second wavelength spectrum may be less than at least one of the following: approximately 1.8, approximately 1.7, approximately 1.65, approximately 1.6, approximately 1.5, approximately 1.45, approximately 1.4, and approximately 1.3. In some non-limiting examples, the refractive index of the CPL(m)2 for at least one wavelength in the first wavelength spectrum may be less than at least one of the following: approximately 1.8, approximately 1.7, approximately 1.65, approximately 1.6, approximately 1.5, approximately 1.45, approximately 1.4, and approximately 1.3.

[0083] In some non-limiting examples, the extinction coefficient of the CPL(m)2 may exceed the extinction coefficient of the CPL(m)1 for at least one wavelength in the first wavelength spectrum. In some non-limiting examples, the extinction coefficient of the CPL(m)2 may exceed the extinction coefficient of the CPL(m)1 for every wavelength in the first wavelength spectrum.

[0084] In some non-limiting examples, the threshold value may be at least one of: 0.1, 0.09, 0.08, 0.06, 0.05, 0.03, 0.01, 0.005, and 0.001.

[0085] In some non-limiting examples, the first emission region and the second emission region can occupy different areas of the device in a lateral direction.

[0086] In some non-limiting examples, the first wavelength spectrum and the second wavelength spectrum are located in the visible spectrum. In some non-limiting examples, the first wavelength spectrum can have a first peak wavelength, and the second wavelength spectrum can have a second peak wavelength longer than the first peak wavelength.

[0087] In some non-limiting examples, the first starting wavelength may be the shortest wavelength among the at least one wavelength, at which wavelength the intensity of the first wavelength spectrum may be at least one of approximately 20%, approximately 15%, approximately 10%, approximately 5%, approximately 3%, approximately 1%, and approximately 0.01% of the intensity at the first peak wavelength. In some non-limiting examples, the second starting wavelength may be the shortest wavelength among the at least one wavelength, at which wavelength the intensity of the second wavelength spectrum may be at least one of approximately 20%, approximately 15%, approximately 10%, approximately 5%, approximately 3%, approximately 1%, and approximately 0.01% of the intensity at the second peak wavelength.

[0088] In some non-limiting examples, the first wavelength spectrum may correspond to a color that is at least one of B(lue) and G(reen). In some non-limiting examples, the second wavelength spectrum may correspond to a color that is at least one of R(ed) and G(reen). In some non-limiting examples, the first wavelength spectrum may correspond to a color that is B(lue), and the second wavelength spectrum may correspond to a color that is at least one of G(reen) and R(ed). In some non-limiting examples, the first wavelength spectrum may correspond to a color that is G(reen), and the second wavelength spectrum may correspond to a color that is R(ed).

[0089] In some non-limiting examples, the first CPL material can have a different composition than the second CPL material.

[0090] In some non-limiting examples, the thickness of the first CPL may be the same as the thickness of the second CPL. In some non-limiting examples, the thickness of the first CPL may be different from the thickness of the second CPL.

[0091] In some non-limiting examples, the thickness of the first CPL may be in a range of about 5 to about 120 nm. In some non-limiting examples, the thickness of the first CPL may exceed at least one of the following: about 10 nm, about 15 nm, about 20 nm, about 25 nm, about 30 nm, and about 40 nm. In some non-limiting examples, the thickness of the first CPL may be less than at least one of the following: about 100 nm, about 90 nm, about 80 nm, and about 70 nm.

[0092] In some non-limiting examples, the thickness of the second CPL may be in a range of about 5 nm to about 120 nm. In some non-limiting examples, the thickness of the second CPL may exceed at least one of the following: about 10 nm, about 15 nm, about 20 nm, about 25 nm, about 30 nm, and about 40 nm. In some non-limiting examples, the thickness of the second CPL may be less than about 100 nm, about 90 nm, about 80 nm, and about 70 nm.

[0093] In some non-limiting examples, the device may further include at least one electrode coating in the first emission region and the second emission region. In some non-limiting examples, the first CPL may be disposed on the exposed layer surface of the at least one electrode coating. In some non-limiting examples, the second CPL may be disposed on the exposed layer surface of the at least one electrode coating. In some non-limiting examples, the at least one electrode coating may have a first electrode thickness in the first emission region. In some non-limiting examples, the at least one electrode coating may have a second electrode thickness in the second emission region.

[0094] In some non-limiting examples, the first electrode thickness may be less than the second electrode thickness. In some non-limiting examples, the quotient of the first electrode thickness divided by the second electrode thickness may be less than at least one of: about 0.9, about 0.8, about 0.7, about 0.6, about 0.5, about 0.4, about 0.3, and about 0.2. In some non-limiting examples, the first electrode thickness may be within the range of at least one of: about 5 nm to about 100 nm, about 5 nm to about 50 nm, about 5 nm to about 25 nm, about 5 nm to about 20 nm, about 5 nm to about 15 nm, about 8 nm to about 15 nm, about 8 nm to about 12 nm, and about 8 nm to about 10 nm. In some non-limiting examples, the second electrode thickness may be within the range of at least one of: about 10 nm to about 60 nm, about 10 nm to about 50 nm, about 15 nm to about 40 nm, about 15 nm to about 35 nm, and about 20 nm to about 35 nm.

[0095] In some non-limiting examples, the second electrode thickness may be less than the first electrode thickness. In some non-limiting examples, the quotient of the second electrode thickness divided by the first electrode thickness may be less than at least one of: about 0.9, about 0.8, about 0.7, about 0.6, about 0.5, about 0.4, about 0.3, and about 0.2. In some non-limiting examples, the first electrode thickness may be in the range of at least one of: about 10 nm to about 60 nm, about 10 nm to about 50 nm, about 15 nm to about 40 nm, about 15 nm to about 35 nm, and about 20 nm to about 35 nm. In some non-limiting examples, the second electrode thickness may be in the range of at least one of: about 10 nm to about 100 nm, about 5 nm to about 50 nm, about 5 nm to about 25 nm, about 5 nm to about 20 nm, about 5 nm to about 15 nm, about 8 nm to about 15 nm, about 8 nm to about 12 nm, and about 8 nm to about 10 nm.

[0096] In some non-limiting examples, the at least one electrode coating may include a metal coating and a conductive coating disposed on an exposed surface of the metal coating. In some non-limiting examples, the conductive coating may extend between the metal coating and the second CPL in the second emission region. In some non-limiting examples, the first CPL may be disposed on an exposed surface of the metal coating in the first emission region. In some non-limiting examples, the conductive coating may extend between the metal coating and the first CPL in the first emission region.

[0097] In some non-limiting examples, the metal coating may include a metal coating material. In some non-limiting examples, the metal coating material may include a metal having a bond dissociation energy in a diatomic molecule of at least one of at least 10 kJ / mol, at least 50 kJ / mol, at least 100 kJ / mol, at least 150 kJ / mol, at least 180 kJ / mol, and at least 200 kJ / mol at 298 K. In some non-limiting examples, the metal coating material may include an element having an electronegativity of less than at least one of about 1.4, about 1.3, and about 1.2.

[0098] In some non-limiting examples, the metal coating material may include an element selected from the group consisting of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combination of any of these elements. In some non-limiting examples, the element may be selected from the group consisting of Cu, Ag, Au, and any combination of any of these elements. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may be selected from the group consisting of Mg, Zn, Cd, Yb, and any combination of any of these elements. In some non-limiting examples, the element may be selected from Sn, Ni, Ti, Pd, Cr, Fe, Co, and any combination of any of these elements. In some non-limiting examples, the element may be selected from Zr, Pt, V, Nb, Ir, Os, and any combination of any of these elements. In some non-limiting examples, the element may be selected from Ta, Mo, W, and any combination of any of these elements. In some non-limiting examples, the element may be selected from Mg, Ag, Al, Yb, Li, and any combination of any of these elements. In some non-limiting examples, the element may be selected from any one of Mg, Ag, Al, Yb, and any combination of any of these elements. In some non-limiting examples, the element may be selected from Mg, Ag, Yb, and any combination of any of these elements. In some non-limiting examples, the element may be Ag.

[0099] In some non-limiting examples, the metal coating material may include a pure metal. In some non-limiting examples, the pure metal may be at least one of pure silver (Ag) and substantially pure Ag. In some non-limiting examples, the pure metal may be at least one of pure magnesium (Mg) and substantially pure Mg. In some non-limiting examples, the pure metal may be at least one of pure aluminum (Al) and substantially pure Al.

[0100] In some non-limiting examples, the metal coating material may include an alloy. In some non-limiting examples, the alloy may be at least one of an alloy containing silver (Ag) and an alloy containing silver-magnesium (AgMg).

[0101] In some non-limiting examples, the metal coating may include oxygen (O). In some non-limiting examples, the metal coating may include O and at least one metal. In some non-limiting examples, the metal coating may include a metal oxide. In some non-limiting examples, the metal oxide may include zinc (Zn), indium (I), tin (Sn), antimony (Sb), gallium (Ga), and any combination of any of these metal oxides. In some non-limiting examples, the metal oxide may be a transparent conductive oxide (TCO). In some non-limiting examples, the TCO may be at least one of the following and any combination of any of these TCOs: indium titanium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO).

[0102] In some non-limiting examples, the metal coating layer may include multiple layers of the metal coating material. In some non-limiting examples, the metal coating material of the first layer of the multiple layers may be different from the metal coating material of the second layer of the multiple layers. In some non-limiting examples, the metal coating material of at least one layer of the multiple layers may include ytterbium (Yb). In some non-limiting examples, the metal coating material of another layer of the multiple layers may include at least one of an alloy containing silver (Ag) and an alloy containing silver-magnesium (AgMg). In some non-limiting examples, the metal coating material of another layer of the multiple layers may include pure silver (Ag), substantially pure Ag, pure magnesium (Mg), substantially pure Mg, and any combination of any of these metal coating materials. In some non-limiting examples, the metal coating material of one of the multiple layers proximate to the NIC includes an element selected from the group consisting of silver (Ag), gold (Au), copper (Cu), aluminum (Al), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combination of any of these elements. In some non-limiting examples, the element may include Cu, Ag, Au, and any combination of any of these elements. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Sn, Ti, Pd, Cr, Fe, Co, and any combination of any of these elements. In some non-limiting examples, the element may include Ni, Zr, Pt, V, Nb, Ir, Os, and any combination of any of these elements. In some non-limiting examples, the element may include Ta, Mo, W, and any combination of any of these elements. In some non-limiting examples, the element may include Mg, Ag, Al, and any combination of any of these elements. In some non-limiting examples, the element may include Mg, Ag, and any combination of any of these elements. In some non-limiting examples, the element may be Ag. In some non-limiting examples, at least one of the plurality of layers may include a metal having a work function less than about 4 eV.

[0103] In some non-limiting examples, the conductive coating comprises a conductive coating material. In some non-limiting examples, the conductive coating material may include a metal having a bond dissociation energy in a diatomic molecule of less than 300 kJ / mol, less than 200 kJ / mol, less than 165 kJ / mol, less than 150 kJ / mol, less than 100 kJ / mol, less than 50 kJ / mol, and less than 20 kJ / mol at 298 K.

[0104] In some non-limiting examples, the conductive coating material may include an element selected from the group consisting of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), yttrium (Y), and any combination of any of these elements. In some non-limiting examples, the element may be selected from the group consisting of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, and any combination of any of these elements. In some non-limiting examples, the element may be selected from the group consisting of Cu, Ag, Au, and any combination of these elements. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may be selected from the group consisting of Mg, Zn, Cd, Yb, and any combination of any of these elements. In some non-limiting examples, the element can be selected from Mg, Ag, Al, Yb, Li and any combination of any of these elements. In some non-limiting examples, the element can be selected from Mg, Ag, Yb and any combination of any of these elements. In some non-limiting examples, the element can be selected from Mg, Ag and any combination of any of these elements. In some non-limiting examples, the element can be Ag.

[0105] In some non-limiting examples, the conductive coating material may include a pure metal. In some non-limiting examples, the pure metal may be at least one of pure silver (Ag) and substantially pure Ag. In some non-limiting examples, the purity of the substantially pure Ag may be at least one of at least about 95%, at least about 98%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and at least about 99.9995%. In some non-limiting examples, the pure metal may be at least one of pure magnesium (Mg) and substantially pure Mg. In some non-limiting examples, the purity of the substantially pure Mg may be at least one of at least about 95%, at least about 98%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and at least about 99.9995%.

[0106] In some non-limiting examples, the conductive coating may include an alloy. In some non-limiting examples, the alloy may be at least one of an alloy containing silver (Ag), an alloy containing magnesium (Mg), and an alloy containing AgMg.

[0107] In some non-limiting examples, the conductive coating may include a non-metallic element. In some non-limiting examples, the non-metallic element may be selected from at least one of oxygen (O), sulfur (S), nitrogen (N), carbon (C), and any combination of any of these elements. In some non-limiting examples, the concentration of the non-metallic element in the conductive coating material may be less than at least one of the following: about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and about 0.0000001%.

[0108] In some non-limiting examples, the device may further include a semiconductive layer, wherein the at least one electrode coating extends between the semiconductive layer and the first CPL in the first emitting region and between the semiconductive layer and the second CPL in the second emitting region. In some non-limiting examples, at least one of the first CPL and the second CPL may include a nucleation inhibition coating (NIC) for patterning the conductive coating.

[0109] In some non-limiting examples, the second CPL may be positioned in the first emission region. In some non-limiting examples, the first CPL may extend between the at least one electrode coating in the first emission region and the second CPL. In some non-limiting examples, the second CPL may extend between the at least one electrode coating in the first emission region and the first CPL.

[0110] In some non-limiting examples, the first CPL may be positioned in the second emission region. In some non-limiting examples, the first CPL may extend between the at least one electrode coating in the second emission region and the second CPL. In some non-limiting examples, the second CPL may extend between the at least one electrode coating in the second emission region and the first CPL.

[0111] In some non-limiting examples, the device may further include a third emission region configured to emit photons having a third wavelength spectrum characterized by a third starting wavelength. In some non-limiting examples, the third wavelength spectrum may have a third peak wavelength that is shorter than the second peak wavelength of the second wavelength spectrum and longer than the first peak wavelength of the first wavelength spectrum. In some non-limiting examples, the first wavelength spectrum may correspond to a color of B (lue), the second wavelength spectrum may correspond to a color of G (reen), and the third wavelength spectrum may correspond to a color of R (ed).

[0112] In some non-limiting examples, at least one of the first CPL and the second CPL may be disposed in the third emission region. In some non-limiting examples, a third CPL may be disposed in the third emission region. In some non-limiting examples, at least one of the third CPL and the third CPL material (CPL(m)3) may exhibit a third absorption edge at a third absorption edge wavelength shorter than the third starting wavelength.

[0113] In some non-limiting examples, the third absorption edge can be characterized by a third extinction wavelength where the extinction coefficient of the CPL(m)3 is equal to a threshold.

[0114] In some non-limiting examples, the third onset wavelength may be longer than the absorption edge wavelength by less than at least one of about 200 nm, about 150 nm, about 130 nm, about 100 nm, about 80 nm, about 70 nm, about 60 nm, about 50 nm, about 40 nm, about 35 nm, about 25 nm, about 20 nm, about 15 nm, and about 10 nm. In some non-limiting examples, the third extinction wavelength is the longest wavelength among at least one wavelength at which the extinction coefficient of the CPL(m)3 equals the threshold. In some non-limiting examples, the first derivative of the extinction coefficient of the CPL(m)3 as a function of wavelength may be negative at the third extinction wavelength. In some non-limiting examples, the extinction coefficient of the CPL(m)3 at wavelengths longer than the third extinction wavelength may be less than the threshold. In some non-limiting examples, the extinction coefficient of the CPL(m)3 at all wavelengths longer than the third extinction wavelength may be less than the threshold. In some non-limiting examples, the extinction coefficient of the CPL(m)3 at any wavelength longer than the third starting wavelength may be less than at least one of the following: about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. In some non-limiting examples, the extinction coefficient of the CPL(m)3 at a wavelength shorter than the first absorption edge wavelength may exceed at least one of the following: about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0.

[0115] In some non-limiting examples, the refractive index of the CPL(m)3 at at least one wavelength longer than the third absorption edge wavelength may exceed the refractive index of the CPL(m)3 at at least one wavelength shorter than the first absorption edge wavelength. In some non-limiting examples, the refractive index of the CPL(m)3 at at least one wavelength in the third wavelength spectrum may exceed at least one of the following: about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5.

[0116] In some non-limiting examples, the third emission region may be substantially devoid of at least one of the first CPL and the second CPL.

[0117] Examples have been described above in conjunction with aspects of the present disclosure in which they may be implemented. Those skilled in the art will appreciate that an example may be implemented in conjunction with the aspects through which the example is described, but may also be implemented through other examples of the aspect or another aspect. When examples are mutually exclusive or otherwise incompatible with each other, it will be apparent to those skilled in the relevant art. Some examples may be described with respect to one aspect, but may also be applicable to other aspects, as will be apparent to those skilled in the relevant art.

[0118] Some aspects or examples of the present disclosure may provide an optoelectronic device having a first emitting region and a second emitting region, the first emitting region and the second emitting region having corresponding emission spectra, over which a corresponding capping layer (CPL) is deposited, the optical properties of which may be selected to modify at least one optical microcavity effect of the underlying emitting region. The CPL may include a patterned coating having an initial adhesion probability of forming a conductive coating on a surface thereof that is significantly less than an initial adhesion probability of forming a conductive coating on an underlying surface, such that the CPL is substantially devoid of a subsequently deposited conductive coating. DETAILED DESCRIPTION

[0119] optoelectronic devices

[0120] The present disclosure relates generally to electronic devices, and more particularly to optoelectronic devices. An optoelectronic device generally encompasses any device that converts electrical signals into photons and vice versa.

[0121] In this disclosure, the terms "photon" and "light" may be used interchangeably to refer to similar concepts. In this disclosure, a photon may have a wavelength in the visible spectrum, its infrared (IR) and / or ultraviolet (UV) region.

[0122] In this disclosure, the term "visible spectrum" as used herein generally refers to at least one wavelength in the visible portion of the electromagnetic spectrum. In some non-limiting examples, the visible spectrum can correspond to a wavelength range of about 380 nm to about 750 nm.

[0123] In this disclosure, the term "emission spectrum" (ES) as used herein, and as Figure 32 The plot of intensity (I) versus wavelength (λ), shown by way of non-limiting example in FIG, generally refers to the electroluminescence spectrum of light emitted by an optoelectronic device. The emission spectrum (ES) can be detected using an optical instrument, such as a spectrophotometer, which measures the intensity (I) of electromagnetic radiation across a range of wavelengths, as a non-limiting example.

[0124] In this disclosure, as used herein and by Figure 32The term "starting wavelength" λ is shown as a non-limiting example in onset Usually refers to the shortest wavelength at which emission is detected within the emission spectrum.

[0125] In this disclosure, as used herein and by Figure 32 The term "peak wavelength" λ is shown as a non-limiting example in max It usually refers to the wavelength at which the maximum brightness is detected within the emission spectrum. It will be understood by those skilled in the art that brightness can be measured in candela (cd) (a measure of luminous intensity per square area) and in cd / m². 2 In some non-limiting examples of optoelectronic devices whose emission spectrum varies with viewing angle (i.e., the angle at which the emission spectrum is measured), the emission spectrum taken at an angle normal to the plane of the device can be used to determine various characteristics of the emission, including but not limited to its maximum brightness and / or peak wavelength λ. max .

[0126] Usually, the starting wavelength λ onset Appears at a wavelength greater than the peak wavelength λ max In some non-limiting examples, the starting wavelength λ onset It can correspond to the brightness in the emission spectrum being at the threshold intensity (I onset ) wavelength, as usually Figure 32 In some non-limiting examples, it can be a peak wavelength λ max The brightness at the selected location is about 10%, about 5%, about 3%, about 1%, about 0.5%, about 0.1% or about 0.01%.

[0127] Typically, the electroluminescent device is configured to emit and / or transmit light having a wavelength in the range of about 425 nm to about 725 nm, and more specifically, in some non-limiting examples, to emit and / or transmit light having peak emission wavelengths of 456 nm, 528 nm, and 624 nm, corresponding to the B(lue)2543, G(reen)2542, and R(ed)2541 sub-pixels, respectively. Thus, in the context of such electroluminescent devices, the emission spectrum can be any wavelength or range of wavelengths from about 425 nm to about 725 nm, or from about 456 nm to about 624 nm. In some non-limiting examples, photons having wavelengths in the visible spectrum may also be referred to herein as "visible light."

[0128] In some non-limiting examples, the emission spectrum in the R(ed) portion of the visible spectrum can be represented by a peak wavelength λ max Characterize the peak wavelength λ maxThe wavelength may be within the range of 600 nm to about 640 nm, and in some non-limiting examples, may be substantially about 620 nm. The corresponding starting wavelength λ onset It may be within a wavelength range of about 500 nm to about 610 nm, about 575 nm to about 600 nm, about 570 nm to about 580 nm, or about 580 nm to about 590 nm.

[0129] In some non-limiting examples, the emission spectrum in the Green portion of the visible spectrum can be represented by a peak wavelength λ max Characterize the peak wavelength λ max The corresponding starting wavelength λ may be within the wavelength range of 510 nm to about 540 nm, and in some non-limiting examples, may be substantially about 530 nm. onset It may be within a wavelength range of about 470 nm to about 520 nm, about 480 nm to about 510 nm, about 480 nm to about 490 nm, or about 490 to about 500 nm.

[0130] In some non-limiting examples, the emission spectrum in the B(lue) portion of the visible spectrum can be represented by a peak wavelength λ max Characterize the peak wavelength λ max The wavelength may be within the range of 450 nm to about 460 nm, and in some non-limiting examples, may be substantially about 455 nm. onset It may be within a wavelength range of about 420 nm to about 450 nm, about 425 nm to about 440 nm, about 420 nm to about 430 nm, or about 430 nm to about 440 nm.

[0131] In the present disclosure, the term "IR signal," as used herein, generally refers to EM radiation having a wavelength in the IR portion of the EM spectrum. In some non-limiting examples, the IR signal can have a wavelength corresponding to its near-infrared (NIR) subset. As non-limiting examples, the wavelength of the NIR signal can be about 750 nm to about 1400 nm, about 750 nm to about 1300 nm, about 800 nm to about 1300 nm, about 800 nm to about 1200 nm, about 850 nm to about 1100 nm, and / or about 900 nm to about 1000 nm.

[0132] In this disclosure, the term "absorption spectrum" as used herein generally refers to the wavelength (sub)range of the EM spectrum where absorption occurs.

[0133] In this disclosure, as used herein and generally referred to herein Figure 33The term "extinction coefficient" (k), as used in the non-limiting examples in the accompanying drawings, refers to the degree to which an electromagnetic coefficient is attenuated when propagating through a material. In some non-limiting examples, the extinction coefficient can be understood as the imaginary part k corresponding to the complex refractive index N. In some non-limiting examples, the extinction coefficient of a material can be measured by a variety of methods, including but not limited to ellipsometry.

[0134] In this disclosure, as used herein to describe a medium and generally by Figure 32 The terms "refractive index" (n) and / or "index," as used in the non-limiting examples herein, refer to values calculated based on the ratio of the speed of light in such a medium relative to the speed of light in a vacuum. In the present disclosure, particularly when used to describe properties of substantially transparent materials, including but not limited to thin film layers and / or coatings, these terms may correspond to the real number portion n in the expression N = n + ik, where n represents the complex refractive index and k represents the extinction coefficient.

[0135] As will be understood by those skilled in the relevant art, substantially transparent materials, including but not limited to thin film layers and / or coatings, typically exhibit relatively low k values in the visible spectrum, and thus the imaginary part of the expression contributes negligibly to the complex refractive index N. On the other hand, a light-transmitting electrode, for example formed from a metal thin film, may exhibit relatively low n values and relatively high k values in the visible spectrum. Therefore, the complex refractive index N of such a thin film may be primarily determined by its imaginary part.

[0136] In this disclosure, unspecific references to a refractive index are intended to refer to the real part n of the complex refractive index N, unless the context dictates otherwise.

[0137] In this disclosure, as used herein and by Figure 33 The terms "absorption edge" (AE), "absorption discontinuity" and / or "absorption limit," as used in the non-limiting examples of FIGURES , generally refer to a rapid decrease in the extinction coefficient, k, and / or absorption spectrum of a coating, layer, and / or material. In the present disclosure, an "absorption edge," as described, for example, with respect to a cover layer (CPL) 3610, refers to, for example, the longest wavelength within the visible spectrum at which a rapid decrease in the extinction coefficient, k, of the CPL 3610 is observed. In some non-limiting examples, the extinction coefficient, k, of the CPL 3610, particularly in the visible spectrum, can decrease toward zero and remain low throughout the remainder of the visible spectrum. In such non-limiting examples, the absorption edge of the CPL 3610 can correspond to the point at which the extinction coefficient, k, passes through a threshold value, T. AE The wavelength or longest wavelength, as usually Figure 33In some non-limiting examples, the absorption edge of CPL 3610 may correspond to the extinction coefficient k passing through a threshold value T AE The wavelength or longest wavelength at which the first derivative of the extinction coefficient k as a function of wavelength λ is negative.

[0138] In some non-limiting examples, there can be a generally positive correlation between the refractive index n and the transmittance, or in other words, there can be a generally negative correlation between the refractive index n and the absorption at or near the absorption edge. In some non-limiting examples, the absorption edge of the material can correspond to a wavelength where the extinction coefficient k approaches a threshold value close to zero.

[0139] An organic optoelectronic device may encompass any optoelectronic device in which one or more active layers and / or strata thereof are primarily formed of organic (carbon-containing) materials, and more particularly, of organic semiconductor materials.

[0140] In the present disclosure, it should be understood by those skilled in the art that organic materials may include, but are not limited to, a variety of organic molecules and / or organic polymers. Further, it should be understood by those skilled in the art that organic materials doped with various inorganic substances (including but not limited to elements and / or inorganic compounds) may still be considered as organic materials. Still further, it should be understood by those skilled in the art that various organic materials may be used, and the processes described herein are generally applicable to a whole range of such organic materials. Still further, it should be understood by those skilled in the art that organic materials containing metals and / or other inorganic elements may still be considered as organic materials. Still further, it should be understood by those skilled in the art that various organic materials may be molecules, oligomers and / or polymers.

[0141] In the present disclosure, inorganic substances may refer to substances that primarily include inorganic materials. In the present disclosure, inorganic materials may include any material that is not considered an organic material, including but not limited to metals, glasses, and / or minerals.

[0142] In the case where an optoelectronic device emits photons through a luminescence process, the device can be considered an electroluminescent device. In some non-limiting examples, the electroluminescent device can be an organic light emitting diode (OLED) device. In some non-limiting examples, the electroluminescent device can be part of an electronic device. As non-limiting examples, the electroluminescent device can be an OLED lighting panel or module and / or an OLED display or module for a computing device, such as a smartphone, tablet computer, laptop computer, e-reader, etc. and / or some other electronic device such as a monitor and / or television (collectively referred to as "user device").

[0143] In some non-limiting examples, the optoelectronic device can be an organic photovoltaic (OPV) device that converts photons into electricity. In some non-limiting examples, the optoelectronic device can be an electroluminescent quantum dot device. In this disclosure, unless otherwise specifically indicated, reference will be made to OLED devices, with the understanding that, in some examples, such disclosure can be equally applicable to other optoelectronic devices, including but not limited to OPV and / or quantum dot devices, in a manner readily apparent to one of ordinary skill in the relevant art.

[0144] The structure of such devices will be described from each of two aspects, namely from a cross-sectional aspect and / or from a lateral (plan view) aspect.

[0145] In this disclosure, the terms "layer" and "strata" may be used interchangeably to refer to similar concepts.

[0146] In the context of the cross-sectional aspects described below, components of such devices are shown as substantially flat transverse layers. One of ordinary skill in the relevant art will understand that such substantially flat representations are for illustrative purposes only, and that across the lateral extent of such devices, there may be locally substantially flat layers of varying thicknesses and sizes, including, in some non-limiting examples, layers that are substantially completely absent and / or layers separated by non-flat transition regions (including transverse gaps and flat discontinuities). Thus, while for illustrative purposes, devices are shown below as substantially layered structures in their cross-sectional aspects, such devices may illustrate different topography to define features in the plan view aspects discussed below, each of which may substantially exhibit the layered profile discussed in the cross-sectional aspects.

[0147] Cross-sectional aspects

[0148] Figure 1 is a simplified block diagram of a cross-sectional view of an example optoelectronic device (which, in some non-limiting examples, may be an electroluminescent device) according to the present disclosure. The optoelectronic device, shown generally at 100, includes a plurality of layers, including but not limited to a substrate 110, on which is disposed a front plate 10 comprising a plurality of layers, namely a first electrode 120, at least one semiconducting layer 130, and a second electrode 140. In some non-limiting examples, the front plate 10 may provide a mechanism for photon emission and / or manipulation of emitted photons. In some non-limiting examples, a barrier coating 1650 ( Figure 16C ) to surround and / or encapsulate the layer and / or the substrate 110 disposed thereon.

[0149] For the purpose of this description, the exposed surface of the underlying material is referred to as 111. Figure 1, the exposed layer surface 111 is shown as belonging to the second electrode 140. One of ordinary skill in the relevant art will understand that, as a non-limiting example, the exposed layer surface 111 will be shown as 111a of the substrate 110 when depositing the first electrode 120.

[0150] It will be understood by those skilled in the relevant art that when a component, layer, region and / or portion thereof is referred to as being “formed,” “placed” and / or “deposited” on and / or over another underlying material, component, layer, region and / or portion, such formation, placement and / or deposition may be directly and / or indirectly located on the exposed layer surface 111 of such underlying material, component, layer, region and / or portion (at the time such formation, placement and / or deposition occurs), with the potential for intermediate materials, components, layers, regions and / or portions therebetween.

[0151] In this disclosure, a directional convention is followed, extending substantially vertically relative to the lateral aspects described above, in which substrate 110 is considered the "bottom" of optoelectronic device 100, and layers (including, but not limited to, first electrode 120, at least one semiconducting layer 130, and second electrode 140) are disposed at the "top" of substrate 110. Following this convention, second electrode 140 is at the top of optoelectronic device 100 as shown, even though (as may be the case in some instances, including, but not limited to, during a fabrication process in which one or more layers (including, but not limited to, first electrode 120, at least one semiconducting layer 130, and second electrode 140) may be introduced via a vapor deposition process) substrate 110 is physically inverted such that the top surface on which one of the layers (such as, but not limited to, first electrode 120) is to be disposed is physically located below substrate 110, thereby causing deposited material (not shown) to migrate upward and be deposited as a thin film on its top surface.

[0152] In some non-limiting examples, optoelectronic device 100 can be electrically coupled to power source 15. When so coupled, optoelectronic device 100 can emit photons as described herein.

[0153] In some non-limiting examples, the optoelectronic device 100 can be classified according to the emission direction of photons generated therefrom. In some non-limiting examples, if the generated photons are emitted in a direction toward and through the substrate 110 at the bottom of the optoelectronic device 100 and away from the layers disposed on top of the substrate 110, the optoelectronic device 100 can be considered a bottom-emitting device. In some non-limiting examples, if the photons are emitted in a direction away from the substrate 110 at the bottom of the optoelectronic device 100 and toward and / or through the top layer (i.e., the second electrode 140), the optoelectronic device 100 can be considered a top-emitting device, which is disposed on top of the substrate 110 together with the intermediate layers (including but not limited to: the first electrode 120 and the at least one semiconducting layer 130). In some non-limiting examples, if the optoelectronic device 100 is configured to emit photons at the bottom (toward and through the substrate 110) and the top (toward and through the top layer), the device can be considered a double-sided emitting device.

[0154] Thin film formation

[0155] The layers of the front plate 10 (including but not limited to: the first electrode 120, at least one semiconductive layer 130, and the second electrode 140) can be sequentially disposed on the target exposed layer surface 111 of the underlying material (and / or in some non-limiting examples, including but not limited to, in the case of selective deposition disclosed herein, disposed in at least one target area and / or portion of such surface), which in some non-limiting examples can sometimes be the substrate 110 as a thin film and the intermediate lower layer (including but not limited to: the first electrode 120, the at least one semiconductive layer 130, and the second electrode 140). In some non-limiting examples, the electrodes (including but not limited to: the first electrode 120, the second electrode 140, the auxiliary electrode 1750, the bus bar 4150) can be formed by the conductive coating 830 ( Figure 8 ) is formed of at least one thin conductive film layer. Those skilled in the relevant art will appreciate that such a conductive coating 830 may be (at least) one of the multiple layers of the optoelectronic device 100. The conductive coating 830 may include a conductive coating material 831. Those skilled in the relevant art will appreciate that the conductive coating 830 and the conductive coating material 831 comprising the conductive coating may exhibit very similar optical and / or other properties, particularly when disposed as a film and under conditions and / or mechanisms substantially similar to those employed to deposit the conductive coating 830.

[0156] like Figure 1The thickness of each layer (including but not limited to: first electrode 120, at least one semiconducting layer 130, and second electrode 140) and substrate 110 shown and throughout the drawings is illustrative only and does not necessarily represent the thickness relative to another layer (including but not limited to: first electrode 120, at least one semiconducting layer 130, and second electrode 140) (and / or substrate 110).

[0157] In the present disclosure, for simplicity of description, the terms "coating film", "sealing coating" and / or "sealing film" 4530 as used herein refer, in some non-limiting examples, to a thin film structure and / or coating of a conductive coating material 831 for a conductive coating 830, in which relevant portions of the surface are substantially coated such that such surfaces are substantially not exposed by or through the sealing film 4530 deposited thereon.

[0158] In this disclosure, nonspecific references to a film are intended to refer to the closure film 4530 unless the context dictates otherwise.

[0159] In some non-limiting examples, the closing film 4530 of the conductive coating material 831 can be positioned to cover a portion of the underlying surface such that within this portion, less than about 20%, less than about 15%, less than about 10%, less than about 5%, less than about 3% or less than about 1% of the underlying surface is exposed therein by or through the closing film 4530.

[0160] Those skilled in the relevant art will appreciate that various techniques and processes, including but not limited to those described herein, can be used to pattern the sealing film 4530 so as to intentionally expose a portion of the exposed layer surface 111 of the underlying surface after deposition of the sealing film 4530. In the present disclosure, if, as a non-limiting example, a thin film and / or coating deposited in the context of such patterning and between such intentionally exposed portions of the exposed layer surface 111 of the underlying surface itself substantially comprises the sealing film 4530, then such a patterned film may be considered to constitute the sealing film 4530.

[0161] It will be understood by those skilled in the relevant art that, due to inherent variability in the deposition process and, in some non-limiting examples, due to the presence of impurities in one or both of the deposited materials, in some non-limiting examples, depositing thin films of conductive coating material 831 and exposed layer surfaces 111 of underlying materials using various techniques and processes (including but not limited to those described herein) may still result in the formation of small holes therein, including but not limited to pinholes, tears, and / or cracks. For purposes of the present disclosure, if, as a non-limiting example, despite the presence of such holes, the deposited thin films and / or coatings substantially comprise a closed film 4530 and meet the percentage coverage criteria listed above, then such films may be considered to constitute a closed film 4530.

[0162] As the monomer continues to vapor-deposit (which in some non-limiting examples may be molecules and / or atoms of the deposited material in vapor form), a sealing film 4530 may eventually be deposited on the exposed surface 111 of the underlying material. The behavior of such a sealing film 4530, including the optical effects caused thereby, is generally relatively consistent and unsurprising.

[0163] In some non-limiting examples, the behavior of a thin film including at least one closure film 4530, including its optical effects, is generally relatively uniform.

[0164] Although the present disclosure discusses thin film formation with reference to at least one layer or coating, with respect to vapor deposition, it will be understood by those skilled in the relevant art that, in some non-limiting examples, the various components of the optoelectronic device 100 may be selectively deposited using a variety of techniques, including but not limited to evaporation (including but not limited to thermal evaporation and / or e-beam evaporation), photolithography, printing (including but not limited to inkjet and / or vapor jet printing, roll-to-roll printing and / or micro-contact transfer printing), physical vapor deposition (PVD) (including but not limited to sputtering), chemical vapor deposition (CVD) (including but not limited to plasma-enhanced CVD (PECVD) and / or organic vapor phase deposition (OVPD)), laser annealing, laser-induced thermal imaging (LITI) patterning, atomic layer deposition (ALD), coating (including but not limited to spin coating, dip coating, wire coating and / or spray coating), and / or combinations thereof. During the deposition of any of the various layers and / or coatings, some processes may be used in combination with a shadow mask, which in some non-limiting examples may be an open mask and / or a fine metal mask (FMM), to achieve various patterns by masking and / or preventing the deposited material from being deposited on certain portions of the surface of the underlying material to which it is exposed.

[0165] In this disclosure, the terms "evaporation" and / or "sublimation" are used interchangeably to generally refer to a deposition process in which a source material is converted into a vapor (including but not limited to by heating) for deposition onto a target surface (in but not limited to a solid state). It will be understood that an evaporation process is a PVD process in which one or more source materials evaporate and / or sublimate under a low pressure (including but not limited to a vacuum) environment to form a vapor monomer, which is deposited on the target surface by desublimation of the one or more evaporated source materials. A variety of different evaporation sources can be used to heat the source material, and therefore, those skilled in the relevant art will understand that the source material can be heated in various ways. As non-limiting examples, the source material can be heated by an electric filament, an electron beam, induction heating, and / or resistive heating. In some non-limiting examples, the source material can be loaded into a heated crucible, a heated boat, a Knudsen cell (which can be a percolation evaporator source), and / or any other type of evaporation source.

[0166] In some non-limiting examples, the deposition source material can be a mixture. In some non-limiting examples, at least one component of the mixture of deposition source materials may not be deposited during the deposition process (or, in some non-limiting examples, may be deposited in a relatively small amount compared to other components of such mixture).

[0167] In the present disclosure, regardless of its deposition mechanism, reference to the layer thickness of a material refers to the amount of material deposited on the target exposed layer surface 111, which corresponds to the amount of material that covers the target surface with a uniformly thick layer of material having a reference layer thickness. By way of non-limiting example, depositing a layer thickness of 10 nm of material indicates that the amount of material deposited on the surface corresponds to the amount of material that forms a uniformly thick layer of material 10 nm thick. It should be understood that, given the thin film formation mechanism discussed above, as a non-limiting example, the actual thickness of the deposited material may not be uniform due to possible stacking or aggregation of monomers (which may be molecules and / or atoms in some non-limiting examples). As a non-limiting example, depositing a layer thickness of 10 nm may result in some portions of the deposited material having an actual thickness greater than 10 nm, or other portions of the deposited material having an actual thickness less than 10 nm. Therefore, in some non-limiting examples, the thickness of certain layers of material deposited on the surface may correspond to the average thickness of the deposited material across the target surface, including but not limited to as a sealing film 4530.

[0168] In this disclosure, reference to a reference layer thickness refers to the layer thickness of the conductive coating 830, also referred to herein as the conductive coating material 831, deposited on a reference surface that exhibits a high initial adhesion probability or initial adhesion coefficient S0 (i.e., a surface having an initial adhesion probability S0 of about 1 and / or close to 1). The reference layer thickness does not represent the actual thickness of the conductive coating material 831 deposited on a target surface, such as, but not limited to, the surface of the nucleation inhibition coating (NIC) 810.

[0169] Those skilled in the relevant art will appreciate that such a NIC 810 can be (at least) one of the multiple layers of the optoelectronic device 100. The NIC 810 can include a NIC material. Those skilled in the relevant art will appreciate that the NIC 810 and the NIC material including the NIC, particularly when disposed as a film and under conditions and / or mechanisms substantially similar to those used to deposit the NIC 810, can exhibit very similar optical and / or other properties.

[0170] In contrast, the reference layer thickness refers to the layer thickness of the conductive coating 831 material that would be deposited on a reference surface, in some non-limiting examples, the surface of a quartz crystal positioned within a deposition chamber used to monitor deposition rate and reference layer thickness when the target and reference surfaces are subjected to the same vapor flux of the conductive coating material 831 during the same deposition cycle. As will be understood by one of ordinary skill in the relevant art, in situations where the target and reference surfaces are not simultaneously subjected to the same vapor flux during deposition, appropriate tool factors may be used to determine and / or monitor the reference layer thickness.

[0171] In this disclosure, reference to depositing X monolayers of material refers to depositing an amount of material to cover a desired area of exposed layer surface 111 with X monolayers of the constituent monomers of the material, such as but not limited to in closure film 4530 .

[0172] The formation of thin films during vapor deposition on exposed layer surfaces 111 of underlying materials involves a nucleation and growth process. During the initial stages of film formation, a sufficient number of vapor monomers (which may be molecules and / or atoms in some non-limiting examples) typically condense from the vapor phase to form initial nuclei on the exposed layer surface 111 presented, whether the surface of substrate 110 (or an intermediate underlying layer (including but not limited to: first electrode 120, at least one semiconducting layer 130, and second electrode 140)). As the vapor monomers continue to impact such surfaces, the size and density of these initial nuclei increase to form small clusters or islands. After reaching saturated island density, adjacent islands will typically begin to merge, increasing the average island size while decreasing the island density. This merging of adjacent islands may continue until a closed film 4530 is formed.

[0173] However, prior to forming the sealing film 4530, deposition of the vapor monomer may result in the thin film structures described herein that may exhibit one or more different properties and be accompanied by different behaviors, including but not limited to optical effects.

[0174] In the present disclosure, reference to depositing a fractional monolayer of material refers to depositing an amount of material to cover a fractional area of a surface of 0.X with a monolayer of the constituent monomers of the material. One of ordinary skill in the relevant art will appreciate that, as a non-limiting example, the actual local thickness of the deposited material over the desired area of the surface may not be uniform due to possible stacking and / or aggregation of monomers. As a non-limiting example, depositing 1 monolayer of material may result in some local areas of the desired area of the surface being covered with material, while other local areas of the desired area of the surface may have multiple atomic and / or molecular layers deposited thereon.

[0175] In the present disclosure, a target surface may be considered to be "substantially free of" "substantially free of" and / or "substantially not covered by" a material if there is substantially no material on the target surface (and / or a target area thereof) as determined by any suitable determination mechanism.

[0176] In the present disclosure, for simplicity of description, the result of vapor monomer deposition onto the exposed layer surface 111 of the underlying material, which has not (yet) reached the stage of forming the closed film 4530, is referred to as a "clustered layer." In some non-limiting examples, such a clustered layer may reflect that the deposition process is not yet complete, wherein such a clustered layer may be considered a transitional stage in the formation of the closed film 4530. In some non-limiting examples, the clustered layer may be the result of a completed deposition process and thus constitute the final stage of internal and self-formation.

[0177] In this disclosure, for simplicity of description, the term "discontinuous coating" 1050 is used herein to refer to a clustered layer wherein the associated portions of the exposed layer surface 111 of the underlying material applied by the deposition process are neither substantially devoid of such material nor formed into a closed film 4530 thereof. In some non-limiting examples, the discontinuous coating 1050 of the conductive coating material 831 can appear as a plurality of discrete islands deposited on such a surface.

[0178] For simplicity of description in this disclosure, the term "dendritic" with respect to coatings, including but not limited to conductive coating 830, refers to features that resemble a branching structure when viewed from a lateral aspect. In some non-limiting examples, conductive coating 830 may include dendritic protrusions 1021 and / or dendritic recesses 1022. In some non-limiting examples, dendritic protrusions 1021 may correspond to a portion of conductive coating 830 that exhibits a branching structure comprising a plurality of physically connected, substantially outwardly extending short protrusions. In some non-limiting examples, dendritic recesses 1022 may correspond to a branching structure comprising gaps, openings, and / or uncovered portions of conductive coating 830 that are physically connected and substantially outwardly extending. In some non-limiting examples, dendritic recesses 1022 may correspond to a mirror image and / or inverse pattern of, including but not limited to, the pattern of dendritic protrusions 1021. In some non-limiting examples, dendritic protrusions 1021 and / or dendritic recesses 1022 may have a configuration that exhibits and / or simulates a fractal pattern, mesh, web, and / or interdigitated structure.

[0179] In some non-limiting examples, there may be a clustered layer reflecting an intermediate stage of vapor monomer deposition, after forming the discontinuous coating 1050, but before forming the closed film 4530, wherein continued merging of clusters and / or islands 5001, 5002 continues until the number of remaining clusters and / or islands 5001, 5002 approaches zero. Where such an intermediate stage clustered layer is reached, in some non-limiting examples, the deposited monomer may form an intermediate stage thin film that may comprise a fraction 0.X of a single monolayer, such that it is not a closed film 4530, as there may be holes and / or gaps in the film coverage, including but not limited to one or more dendritic protrusions 1021 and / or one or more dendritic recesses 1022, yet still remain substantially conductive.

[0180] There are at least three basic growth modes in which thin films can form, initially as clustered layers, and, in some non-limiting examples, ultimately forming a closed film 4530: 1) island (Volmer-Weber), 2) layer-by-layer (Frank-van der Merwe), and 3) Stranski-Krastanov.

[0181] In this disclosure, the terms "island" and "cluster" may be used interchangeably to refer to similar concepts.

[0182] Island growth typically occurs when clusters of outdated monomers nucleate on a surface and grow to form discrete islands. This growth mode occurs when the interactions between monomers are stronger than the interactions between the monomers and the surface.

[0183] The nucleation rate describes how many nuclei of a given size are formed on the surface per unit time (where free energy does not drive the growth or contraction of such nuclei clusters) ("critical nuclei"). During the initial stages of film formation, the density of nuclei is low, so the nuclei cover a relatively small portion of the surface (e.g., there are large gaps / spaces between adjacent nuclei), making it unlikely that nuclei will grow from direct impact of monomers on the surface. Therefore, the growth rate of critical nuclei generally depends on the rate at which adatoms (e.g., adsorbed monomers) on the surface migrate and attach to nearby nuclei.

[0184] Figure 6 An example of the energy distribution of adatoms adsorbed onto the exposed surface 111 of the underlying material (in the figure, substrate 110) is shown. Specifically, Figure 6 Example qualitative energy distributions corresponding to: adatom escape from local low-energy sites (610); diffusion of adatoms on exposed layer surface 111 (620); and desorption of adatoms (630) are shown.

[0185] In 610, the local low energy site can be any site on the exposed layer surface 111 of the underlying material where the adatom will be at a lower energy. In general, the nucleation site can include defects and / or anomalies on the exposed layer surface 111, including but not limited to step edges, chemical impurities, binding sites and / or kinks. Once the adatom is trapped at the local low energy site, in some non-limiting examples, there may generally be an energy barrier before surface diffusion can occur. Figure 6 Such energy barriers are denoted as ΔE 611. In some non-limiting examples, if the energy barrier ΔE 611 to escape from a local low energy site is large enough, the site can act as a nucleation site.

[0186] At 620, the adatoms may diffuse across the exposed layer surface 111. As a non-limiting example, in the case of localized absorbers, the adatoms tend to oscillate around the minimum of the surface potential energy and migrate to various neighboring sites until the adatoms are desorbed and / or incorporated into the growing film and / or growing islands formed by the adatom clusters. Figure 6 The activation energy associated with the surface diffusion of adsorbed atoms is expressed as E s 621.

[0187] In 630, the activation energy associated with the desorption of the adatom from the surface is denoted as E des 631. It will be understood by one of ordinary skill in the relevant art that any adatoms that are not desorbed may remain on the exposed layer surface 111. As non-limiting examples, such adatoms may diffuse on the exposed layer surface 111, be incorporated as part of a growing film and / or coating, and / or become part of adatom clusters that form islands 5001, 5002 on the exposed layer surface 111.

[0188] After adsorption onto a surface, an adatom may desorb from the surface, or it may migrate a distance across the surface before desorbing and interacting with other adatoms to form small clusters or attaching to growing nuclei. The average time an adatom remains on a surface after initial adsorption is given by:

[0189]

[0190] In the above equation, v is the vibration frequency of the adatom on the surface, k is the Boltzmann constant, T is the temperature, and E des 631 is the energy involved in desorbing the adatom from the surface. What should be noted from this equation is that E des The lower the value of 631, the easier it is for the adatom to desorb from the surface, and therefore the shorter the time the adatom will remain on the surface. The average distance an adatom can diffuse is given by:

[0191]

[0192] where a0 is the lattice constant, and E s 621 is the activation energy of surface diffusion. des Low value of 631 and / or E s With high values of 621, the adatom will diffuse a shorter distance before desorption and is therefore less likely to attach to a growing core or interact with another adatom or adatom cluster.

[0193] In the initial stages of film formation, adsorbed adatoms may interact with each other to form clusters, where the critical concentration of clusters per unit area is given by:

[0194]

[0195] Among them E i is the energy involved in dissociating a critical cluster containing i adatoms into individual adatoms, n0 is the total density of adsorption sites, and N1 is the monomer density given by:

[0196]

[0197] in is the vapor impingement rate. In general, i will depend on the crystal structure of the deposited material and will determine the critical cluster size for the formation of stable nuclei.

[0198] The critical monomer supply rate for growing clusters is given by the vapor impingement rate and the average area over which adatoms can diffuse before desorption:

[0199]

[0200] Therefore, the critical nucleation rate is given by the combination of the above equations:

[0201]

[0202] It is to be noted from the above equation that low desorption energies for adsorbed adatoms, high activation energies for adatom diffusion, and surfaces at high temperatures and / or subject to vapor impingement rates will suppress the critical nucleation rate.

[0203] Sites of substrate heterogeneity such as defects, ledges, or step edges may increase E des 631, resulting in a higher nucleation density observed at these sites. Similarly, impurities or contamination on the surface may also increase E des 631, resulting in a higher nucleus density.For vapor deposition processes carried out under high vacuum conditions, the type and density of contaminants on the surface are affected by the vacuum pressure and the residual gas components that make up said pressure.

[0204] Under high vacuum conditions, the flux of molecules impinging on the surface (per square centimeter-second) is given by:

[0205]

[0206] Where P is pressure and M is molecular weight. Therefore, during vapor deposition, higher partial pressures of reactive gases such as H2O can lead to higher contamination density on the surface, resulting in E des 631, resulting in a higher nuclear density.

[0207] In some non-limiting examples, one measure of the amount of material on a surface is the percentage coverage of the surface by the material. In some non-limiting examples, surface coverage can be assessed using a variety of imaging techniques, including but not limited to transmission electron microscopy (TEM), atomic force microscopy (AFM), and / or scanning electron microscopy (SEM).

[0208] In some non-limiting examples, one measure of the amount of conductive material on a surface is (light) transmittance because, in some non-limiting examples, conductive materials including but not limited to metals (including but not limited to silver (Ag), magnesium (Mg) and / or ytterbium (Yb)) attenuate and / or absorb photons.

[0209] Thus, in some non-limiting examples, a surface of a material can be considered to be substantially devoid of conductive material if the transmittance through the material is greater than 90%, greater than 92%, greater than 95%, and / or greater than 98% as compared to the transmittance of a reference material, which, in some non-limiting examples, has a composition and size similar to such material in the visible portion of the electromagnetic spectrum.

[0210] In this disclosure, details of the deposited materials, including but not limited to thickness distribution and / or edge profiles of the layers, are omitted for simplicity of illustration. Various possible edge profiles at the interface between the NIC 810 and the conductive coating 830 are discussed herein.

[0211] substrate

[0212] In some examples, substrate 110 may include a base substrate 112. In some examples, base substrate 112 may be formed from a material suitable for its use, including but not limited to inorganic materials, including but not limited to silicon (Si), glass, metal (including but not limited to metal foil), sapphire, and / or other inorganic and / or organic materials, including but not limited to polymers, including but not limited to polyimide and / or silicon-based polymers. In some examples, base substrate 112 may be rigid or flexible. In some examples, substrate 112 may be defined by at least one flat surface. Substrate 110 has at least one surface that supports the remaining front panel 10 components of optoelectronic device 100, including but not limited to first electrode 120, at least one semiconducting layer 130, and / or second electrode 140.

[0213] In some non-limiting examples, such surfaces can be organic surfaces and / or inorganic surfaces.

[0214] In some examples, in addition to the base substrate 112 , the substrate 110 may further include one or more additional organic and / or inorganic layers (not shown or specifically described herein) supported on the exposed layer surface 111 of the base substrate 112 .

[0215] In some non-limiting examples, such additional layers may include and / or form one or more organic layers that may include, replace, and / or supplement one or more layers of the at least one semiconducting layer 130 .

[0216] In some non-limiting examples, such additional layers may include one or more inorganic layers, which may include and / or form one or more electrodes, which in some non-limiting examples may include, replace and / or supplement the first electrode 120 and / or the second electrode 140.

[0217] In some non-limiting examples, such additional layers may include and / or be formed from a layer of semiconductor material of the backsheet 20 ( Figure 2 ) is formed and / or serves as a layer of the backplane 20. In some non-limiting examples, the backplane 20 contains a power circuit system and / or switching elements for driving the optoelectronic device 100, including but not limited to an electronic TFT structure and / or its components 200 (which can be formed by a photolithography process) Figure 2 ), the process may not be provided in a low pressure (including but not limited to vacuum) environment and / or may be provided before introducing a low pressure environment.

[0218] In the present disclosure, semiconductor materials can be described as materials that generally exhibit a band gap. In some non-limiting examples, a band gap can be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Therefore, semiconductor materials generally exhibit a conductivity less than that of conductive materials (including but not limited to metals), but greater than that of insulating materials (including but not limited to glass). In some non-limiting examples, semiconductor materials can include organic semiconductor materials. In some non-limiting examples, semiconductor materials can include inorganic semiconductor materials.

[0219] Backplane and the TFT structure embodied therein

[0220] Figure 2 is a simplified cross-sectional view of an example of a substrate 110 of an optoelectronic device 100 including the layers of its backplane 20. In some non-limiting examples, the backplane 20 of the substrate 110 may include one or more electronic and / or optoelectronic components including, but not limited to, transistors, resistors, and / or capacitors, as they may support the optoelectronic device 100 as an active matrix and / or passive matrix device. In some non-limiting examples, such a structure may be a thin film transistor (TFT) structure, as shown at 200. In some non-limiting examples, the TFT structure 200 may be fabricated using organic and / or inorganic materials to form the various layers (including, but not limited to, a buffer layer 210, a semiconductor active region 220, a gate insulating layer 230, a TFT gate electrode 240, an interlayer insulating layer 250, a TFT source electrode 260, a TFT drain electrode 270, a TFT insulating layer 280) and / or portions of the backplane 20 of the substrate 110 above the base substrate 112. In Figure 2 In some non-limiting examples, TFT technology and / or structures, including but not limited to one or more layers, can be used to implement non-transistor components including but not limited to resistors and / or capacitors.

[0221] In some non-limiting examples, the backplate 20 may include a buffer layer 210 deposited on the exposed layer surface 111 of the base substrate 112 to support the components of the TFT structure 200. In some non-limiting examples, the TFT structure 200 may include a semiconductor active region 220, a gate insulating layer 230, a TFT gate electrode 240, an interlayer insulating layer 250, a TFT source electrode 260, a TFT drain electrode 270, and / or a TFT insulating layer 280. In some non-limiting examples, the semiconductor active region 220 is formed over a portion of the buffer layer 210, and the gate insulating layer 230 is deposited to substantially cover the semiconductor active region 220. In some non-limiting examples, the TFT gate electrode 240 is formed on top of the gate insulating layer 230, and the interlayer insulating layer 250 is deposited thereon. The TFT source electrode 260 and the TFT drain electrode 270 are formed such that they extend through openings formed through both the interlayer insulating layer 250 and the gate insulating layer 230, such that they are electrically coupled to the semiconductor active region 220. A TFT insulating layer 280 is then formed over the TFT structure 200 .

[0222] In some non-limiting examples, one or more layers of the backplate 20 can be patterned using photolithography, which uses a photomask to expose a selective portion of a photoresist covering the underlying device layer to UV light. Depending on the type of photoresist used, the exposed or unexposed portion of the photomask can then be removed to reveal the desired portion of the underlying device layer. In some instances, the photoresist is a positive photoresist, wherein the selective portion thereof exposed to UV light is substantially non-removable thereafter, and the remaining portion not so exposed is substantially removable thereafter. In some non-limiting examples, the photoresist is a negative photoresist, wherein the selective portion thereof exposed to UV light is substantially removable thereafter, and the remaining portion not so exposed is substantially non-removable thereafter. Therefore, the patterned surface can be etched (including but not limited to chemically and / or physically) and / or washed away and / or washed away to effectively remove the exposed portion of such layer.

[0223] Furthermore, although Figure 2 A top-gate TFT structure 200 is shown in FIG. 2 , but persons skilled in the relevant art will appreciate that other TFT structures including but not limited to a bottom-gate TFT structure may be formed in the backplane 20 without departing from the scope of the present disclosure.

[0224] In some non-limiting examples, the TFT structure 200 may be an n-type TFT and / or a p-type TFT. In some non-limiting examples, the TFT structure 200 may incorporate any one or more of amorphous Si (a-Si), indium gallium zinc (Zn) oxide (IGZO), and / or low temperature polycrystalline Si (LTPS).

[0225] First electrode

[0226] The first electrode 120 is deposited on the substrate 110. In some non-limiting examples, the first electrode 120 is electrically coupled to a terminal of the power supply 15 and / or to ground. In some non-limiting examples, the first electrode 120 is electrically coupled to a terminal of the power supply 15 and / or to ground. Figure 3 ) are coupled in this manner, in some non-limiting examples, the driving circuit may incorporate at least one TFT structure 200 in the backplane 20 of the substrate 110 .

[0227] In some non-limiting examples, the first electrode 120 may include an anode 341 ( Figure 3 ) and / or cathode 342 ( Figure 3 In some non-limiting examples, the first electrode 120 is an anode 341 .

[0228] In some non-limiting examples, the first electrode 120 can be formed by depositing at least one thin conductive film on (a portion of) the substrate 110. In some non-limiting examples, there can be a plurality of first electrodes 120, which are disposed in a spatial arrangement on a lateral aspect of the substrate 110. In some non-limiting examples, one or more of such at least one first electrode 120 can be deposited on (a portion of) a TFT insulating layer 280 disposed in a spatial arrangement in a lateral aspect. If so, in some non-limiting examples, at least one of such at least one first electrode 120 can extend through an opening of the corresponding TFT insulating layer 280, such as Figure 4 As shown, the electrodes (including but not limited to: TFT gate electrode 240, TFT source electrode 260, TFT drain electrode 270) of the TFT structure 200 in the backplane 20 are electrically coupled. Figure 4 , a portion of the at least one first electrode 120 is shown coupled to the TFT drain electrode 270.

[0229] In some non-limiting examples, the at least one first electrode 120 and / or at least one thin film thereof may include various materials, including but not limited to one or more metal materials, including but not limited to Mg, aluminum (Al), calcium (Ca), Zn, Ag, cadmium (Cd), barium (Ba) and / or Yb and / or a combination of any two or more thereof, including but not limited to an alloy containing any of such materials, one or more metal oxides, including but not limited to a transparent conductive oxide (TCO), including but not limited to a ternary composition, such as but not limited to fluorine tin oxide (FTO), indium zinc oxide (IZO) and / or indium tin oxide (ITO) and / or a combination of any two or more thereof and / or a combination in different proportions and / or a combination of any two or more thereof in at least one layer, any one or more of which may be, but not limited to, a thin film.

[0230] In some non-limiting examples, the thin conductive film comprising the first electrode 120 may be selectively deposited, deposited, and / or processed using a variety of techniques including, but not limited to, evaporation (including, but not limited to, thermal evaporation and / or e-beam evaporation), photolithography, printing (including, but not limited to, inkjet and / or vapor jet printing, roll-to-roll printing, and / or micro-contact transfer printing), PVD (including, but not limited to, sputtering), CVD (including, but not limited to, PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including, but not limited to, spin coating, dip coating, line coating, and / or spray coating), and / or a combination of any two or more thereof.

[0231] Second electrode

[0232] A second electrode 140 is deposited on the at least one semiconducting layer 130. In some non-limiting examples, the second electrode 140 is electrically coupled to a terminal of the power supply 15 and / or to ground. In some non-limiting examples, the second electrode 140 is so coupled via at least one driver circuit 300, which in some non-limiting examples may be incorporated into the backplane 20 of the substrate 110 in combination with at least one TFT structure 200.

[0233] In some non-limiting examples, the second electrode 140 can include an anode 341 and / or a cathode 342. In some non-limiting examples, the second electrode 140 is the cathode 342.

[0234] In some non-limiting examples, the second electrode 140 can be formed by depositing a conductive coating 830 (in some non-limiting examples, as at least one thin film) over (a portion of) the at least one semiconducting layer 130. In some non-limiting examples, there can be a plurality of second electrodes 140, which are spatially arranged over lateral aspects of the at least one semiconducting layer 130.

[0235] In some non-limiting examples, sheet resistance is a property of a component, layer, and / or part that can change the characteristics of current passing through such component, layer, and / or part. In some non-limiting examples, the sheet resistance R1 of the second electrode 140 can generally correspond to the sheet resistance of the second electrode 140 measured in isolation from other components, layers, and / or parts of the optoelectronic device 100. In some non-limiting examples, the second electrode 140 can be formed as a thin film. Therefore, in some non-limiting examples, the sheet resistance R1 of the second electrode 140 can be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance R1 can be about 0.1-1,000 Ω / sqr, about 1-100 Ω / sqr, about 2-50 Ω / sqr, about 3-30 Ω / sqr, about 4-20 Ω / sqr, about 5-15 Ω / sqr, and / or about 10-12 Ω / sqr.

[0236] In some non-limiting examples, the second electrode 140 may include a second electrode material.

[0237] In some non-limiting examples, the bond dissociation energy of the metal may correspond to the standard state enthalpy change measured at 298 K from the breakage of a bond of a diatomic molecule formed by two identical atoms of the metal. As a non-limiting example, the bond dissociation energy may be determined based on known literature, including but not limited to Luo, Yu-ran, “Bond dissociation energies” (2010). In some non-limiting examples, the second electrode material may include a metal having a bond dissociation energy of at least 10 kJ / mol, at least 50 kJ / mol, at least 100 kJ / mol, at least 150 kJ / mol, at least 180 kJ / mol, and / or at least 200 kJ / mol.

[0238] In some non-limiting examples, the second electrode material may include a metal having an electronegativity less than about 1.4, about 1.3, and / or about 1.2.

[0239] In some non-limiting examples, the second electrode material may include an element selected from the group consisting of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), and / or tungsten (W). In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Mg, Zn, Cd, and / or Yb. In some non-limiting examples, the element may include Sn, Ni, Ti, Pd, Cr, Fe and / or Co. In some non-limiting examples, the element may include Zr, Pt, V, Nb, Ir and / or Os. In some non-limiting examples, the element may include Ta, Mo and / or W. In some non-limiting examples, the element may include Mg, Ag, Al, Yb and / or Li. In some non-limiting examples, the element may include Mg, Ag and / or Yb. In some non-limiting examples, the element may include Mg and / or Ag. In some non-limiting examples, the element may be Ag.

[0240] In some non-limiting examples, the second electrode material may include a pure metal. In some non-limiting examples, the second electrode material is a pure metal. In some non-limiting examples, the second electrode material is pure Ag or substantially pure Ag. In some non-limiting examples, the second electrode material is pure Mg or substantially pure Mg. In some non-limiting examples, the second electrode material is pure Al or substantially pure Al.

[0241] In some non-limiting examples, the second electrode material may include an alloy. In some non-limiting examples, the alloy may be an alloy containing Ag and / or an alloy containing AgMg.

[0242] In some non-limiting examples, the second electrode material may include other metals in place of Ag and / or in combination with Ag. In some non-limiting examples, the second electrode material may include an alloy of Ag and at least one other metal. In some non-limiting examples, the second electrode material may include an alloy of Ag with Mg and / or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of approximately 5% Ag to approximately 95% Ag by volume, with the remainder being other metals. In some non-limiting examples, the second electrode material includes Ag and Mg. In some non-limiting examples, the second electrode material includes an Ag:Mg alloy having a composition of approximately 1:10 to approximately 10:1 by volume. In some non-limiting examples, the second electrode material includes Ag and Yb. In some non-limiting examples, the second electrode material includes a Yb:Ag alloy having a composition of approximately 1:20 to approximately 1-10:1 by volume. In some non-limiting examples, the second electrode material includes Mg and Yb. In some non-limiting examples, the second electrode material includes a Mg:Yb alloy. In some non-limiting examples, the second electrode material includes Ag, Mg, and Yb. In some non-limiting examples, the second electrode material includes an Ag:Mg:Yb alloy.

[0243] In some non-limiting examples, the second electrode material may include oxygen (O). In some non-limiting examples, the second electrode material may include at least one metal and O. In some non-limiting examples, the second electrode material may include a metal oxide. In some non-limiting examples, the metal oxide includes zinc, indium (I), tin (Sn), antimony (Sb) and / or gallium (Ga). In some non-limiting examples, the metal oxide may be a transparent conductive oxide (TCO). In some non-limiting examples, the TCO may include indium oxide, tin oxide, antimony oxide and / or gallium oxide. In some non-limiting examples, the TCO may include indium titanium oxide (ITO), ZnO, indium zinc oxide (IZO) and / or indium gallium zinc oxide (IGZO). In some non-limiting examples, the TCO may be electrically doped with other elements.

[0244] In some non-limiting examples, the second electrode 140 may be formed of a metal and / or a metal alloy.

[0245] In some non-limiting examples, the second electrode 140 may include at least one metal or metal alloy and at least one metal oxide.

[0246] In some non-limiting examples, the second electrode 140 may include multiple layers of a second electrode material. In some non-limiting examples, the second electrode material of a first layer in the multiple layers may be different from the second electrode material of a second layer in the multiple layers. In some non-limiting examples, the second electrode material of a first layer in the multiple layers may include a metal, and the second electrode material of a second layer in the multiple layers may include a metal oxide.

[0247] In some non-limiting examples, the second electrode material of at least one of the plurality of layers may include Yb. In some non-limiting examples, the second electrode material of one of the plurality of layers may include an alloy containing Ag and / or an alloy containing AgMg and / or pure Ag, substantially pure Ag, pure Mg and / or substantially pure Mg. In some non-limiting examples, the second electrode 140 is a double-layer Yb / AgMg coating.

[0248] In some non-limiting examples, the first layer of the multiple layers near the NIC 810 (topmost) may include an element selected from the group consisting of Ag, Au, Cu, Al, Sn, Ni, Ti, Pd, Cr, Fe, Co, Zr, Pt, V, Nb, Ir, Os, Ta, Mo, and / or W. In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Sn, Ti, Pd, Cr, Fe, and / or Co. In some non-limiting examples, the element may include Ni, Zr, Pt, V, Nb, Ir, and / or Os. In some non-limiting examples, the element may include Ta, Mo, and / or W. In some non-limiting examples, the element may include Mg, Ag, and / or Al. In some non-limiting examples, the element may include Mg and / or Ag. In some non-limiting examples, the element may be Ag.

[0249] In some non-limiting examples, the second electrode 140 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be oxygen (O), sulfur (S), nitrogen (N), and / or carbon (C). Those skilled in the relevant art will appreciate that, in some non-limiting examples, such additional elements may be incorporated into the second electrode 140 as contaminants due to the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the second electrode 140. In some non-limiting examples, the concentration of the non-metallic element in the conductive coating material may be less than approximately 1%, approximately 0.1%, approximately 0.001%, approximately 0.0001%, approximately 0.000001%, approximately 0.000001%, and / or approximately 0.0000001%. In some non-limiting examples, the conductive coating 830 has a composition in which the combined amount of O and C is less than about 10%, about 5%, about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%. In some non-limiting examples, the second electrode 140 can include a closure film 4530. In some non-limiting examples, the second electrode 140 can include a discontinuous coating 1050.

[0250] In some non-limiting examples, the second electrode 140 can be arranged in a pattern that can be defined by at least one region therein that is substantially devoid of the enclosing film 4530 of the second electrode 140 on the first layer surface in the first portion 701. In some non-limiting examples, at least one region has a metal pattern NIC 810 disposed thereon. In some non-limiting examples, at least one region can separate the second electrode 140 into a plurality of discrete segments thereof. In some non-limiting examples, at least two of such plurality of discrete segments of the second electrode 140 can be electrically coupled. In some non-limiting examples, at least two of such plurality of discrete segments of the second electrode 140 can each be electrically coupled to a common conductive layer or coating, including but not limited to the conductive coating 830, to allow current to flow therebetween. In some non-limiting examples, at least two of such plurality of discrete segments of the second electrode 140 can be electrically insulated from each other.

[0251] In some non-limiting examples, the thin conductive film comprising the second electrode 140 may be selectively applied, deposited, and / or processed using a variety of techniques including, but not limited to, evaporation (including, but not limited to, thermal evaporation and / or e-beam evaporation), photolithography, printing (including, but not limited to, inkjet and / or vapor jet printing, roll-to-roll printing, and / or micro-contact transfer printing), PVD (including, but not limited to, sputtering), CVD (including, but not limited to, PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including, but not limited to, spin coating, dip coating, line coating, and / or spray coating), and / or a combination of any two or more thereof.

[0252] For simplicity of description, in the present disclosure, a combination of multiple elements in a single layer is represented by separating two such elements with a colon ":", and multiple elements (combinations) comprising multiple layers in a multi-layer coating are represented by separating two such layers with a slash " / ". In some non-limiting examples, the layer after the slash can be deposited on the layer before the slash.

[0253] In some non-limiting examples, for Mg:Ag alloys, such alloy compositions may range from about 1:10 to about 10:1 by volume.

[0254] In some non-limiting examples, deposition of the second electrode 140 may be performed using an open mask and / or a maskless deposition process.

[0255] Drive circuit

[0256] In this disclosure, for simplicity of description only, sub-pixels 2641-2643 ( Figure 26A ) as a sub-pixel 264x. Similarly, in the present disclosure, pixel 340 ( Figure 3 ) can be discussed in conjunction with the concept of at least one sub-pixel 264x thereof. For simplicity of description only, this composite concept is referred to herein as "(sub)pixel 340 / 264x," and this term is understood to imply one or both of the pixel 340 and / or its at least one sub-pixel 264x, unless the context indicates otherwise.

[0257] Figure 3is a circuit diagram of an example driver circuit as may be provided by one or more of the TFT structures 200 shown in the backplane 20. In the illustrated example, the circuit, generally shown at 300, is used for an example driver circuit of an optoelectronic device 100 (which, in this non-limiting example, may be an active-matrix OLED (AMOLED) device (and / or its (sub)pixels 340 / 264x)) for supplying current to the first electrode 120 and the second electrode 140 and controlling photon emission from the optoelectronic device 100 (and / or the (sub)pixels 340 / 264x). The illustrated circuit 300 incorporates a plurality of p-type top-gate thin-film TFT structures 200, but the circuit 300 may also incorporate one or more p-type bottom-gate TFT structures 200, one or more n-type top-gate TFT structures 200, one or more n-type bottom-gate TFT structures 200, one or more other TFT structures 200, and / or any combination thereof, whether or not formed as one or more thin-film layers. In some non-limiting examples, circuit 300 includes a switching TFT 310 , a driving TFT 320 , and a storage capacitor 330 .

[0258] A (sub) pixel 340 / 264x of the optoelectronic device 100 (which may be an OLED display in some non-limiting examples) is represented by a diode 340. A source 311 of the switching TFT 310 is coupled to a data (or, in some non-limiting examples, a column select) line 30. A gate 312 of the switching TFT 310 is coupled to a gate (or, in some non-limiting examples, a row select) line 31. A drain 313 of the switching TFT 310 is coupled to a gate 322 of the driving TFT 320.

[0259] The source 321 of the driving TFT 320 is coupled to the positive (or negative) terminal of the power supply 15. The (positive) terminal of the power supply 15 is represented by a power supply line (VDD) 32.

[0260] The drain 323 of the driving TFT 320 is coupled to the anode 341 (which may be the first electrode 120 in some non-limiting examples) of the diode 340 (representing the (sub)pixel 340 / 264x of the OLED display) such that the driving TFT 320 and the diode 340 (and / or the (sub)pixel 340 / 264x of the OLED display) are coupled in series between the power supply line (VDD) 32 and ground.

[0261] The cathode 342 (which may be the second electrode 140 in some non-limiting examples) of the diode 340 (representing a (sub)pixel 340 / 264 x of the OLED display) is represented in the circuit 300 as a resistor 350 .

[0262] The storage capacitor 330 is coupled at its respective ends to the source 321 and gate 322 of the drive TFT 320. The drive TFT 320 regulates the current flowing through the diode 340 (representing a (sub) pixel 340 / 264x of the OLED display) according to the voltage of the charge stored in the storage capacitor 330, so that the diode 340 outputs the desired brightness. The voltage of the storage capacitor 330 is set by the switching TFT 310, which is coupled to the data line 30.

[0263] In some non-limiting examples, compensation circuit 370 is provided to compensate for any deviations from variations in transistor properties during the manufacturing process and / or degradation of switching TFT 310 and / or driving TFT 320 over time.

[0264] Semiconducting layer

[0265] In some non-limiting examples, the at least one semiconductive layer 130 may include a plurality of layers 131, 133, 135, 137, and 139. In some non-limiting examples, any of these layers may be arranged in the form of a thin film or in a stacked configuration, and the layers may include, but are not limited to, any one or more of a hole injection layer (HIL) 131, a hole transport layer (HTL) 133, an emission layer (EML) 135, an electron transport layer (ETL) 137, and / or an electron injection layer (EIL) 139. In the present disclosure, the term "semiconductive layer" may be used interchangeably with "organic layer" because the layers 131, 133, 135, 137, and 139 in the optoelectronic device 100 may, in some non-limiting examples, include organic semiconductive materials.

[0266] In some non-limiting examples, the at least one semiconductive layer 130 may form a "tandem" structure including a plurality of EMLs 135. In some non-limiting examples, such a tandem structure may further include at least one charge generation layer (CGL).

[0267] In some non-limiting examples, thin films including layers 131, 133, 135, 137, 139 in the stack constituting at least one semiconductive layer 130 may be selectively applied, deposited, and / or processed using a variety of techniques including, but not limited to, evaporation (including, but not limited to, thermal evaporation and / or e-beam evaporation), photolithography, printing (including, but not limited to, inkjet and / or vapor jet printing, roll-to-roll printing, and / or microcontact transfer printing), PVD (including, but not limited to, sputtering), CVD (including, but not limited to, PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including, but not limited to, spin coating, dip coating, wire coating, and / or spray coating), and / or combinations of any two or more thereof.

[0268] Those skilled in the relevant art will readily appreciate that the structure of the optoelectronic device 100 may be modified by omitting and / or combining one or more of the semiconductor layers 131 , 133 , 135 , 137 , and 139 .

[0269] Furthermore, any of the layers 131, 133, 135, 137, 139 of the at least one semiconducting layer 130 can include any number of sublayers. Still further, any of such layers 131, 133, 135, 137, 139 and / or their sublayers can include various mixtures and / or composition gradients. Additionally, one of ordinary skill in the relevant art will appreciate that the optoelectronic device 100 can include one or more layers comprising inorganic and / or organometallic materials and is not necessarily limited to devices constructed solely of organic materials. As a non-limiting example, the optoelectronic device 100 can include one or more quantum dots.

[0270] In some non-limiting examples, the HIL 131 may be formed using a hole injection material that may facilitate injection of holes through the anode 341 .

[0271] In some non-limiting examples, the HTL 133 may be formed using a hole transport material, which, in some non-limiting examples, may exhibit high hole mobility.

[0272] In some non-limiting examples, the ETL 137 may be formed using an electron transport material, which, in some non-limiting examples, may exhibit high electron mobility.

[0273] In some non-limiting examples, the EIL 139 can be formed using an electron injection material that can facilitate the injection of electrons through the cathode 342 .

[0274] In some non-limiting examples, as non-limiting examples, the EML 135 can be formed by doping a host material with at least one emitter material. In some non-limiting examples, the emitter material can be a fluorescent emitter, a phosphorescent emitter, a thermally activated delayed fluorescence (TADF) emitter, and / or any combination thereof.

[0275] In some non-limiting examples, the optoelectronic device 100 may be an OLED, wherein the at least one semiconducting layer 130 includes an EML 135 at least interposed between conductive thin film electrodes (including but not limited to: a first electrode 120, a second electrode 140), whereby when a potential difference is applied across the electrodes, holes are injected into the at least one semiconducting layer 130 through the anode 341, and electrons are injected into the at least one semiconducting layer 130 through the cathode 342.

[0276] The injected holes and electrons tend to migrate through the various layers 131, 133, 135, 137, 139 until they arrive and meet each other. When the hole and the electron are very close, due to the Coulomb force, they tend to attract each other, and in some instances, they can combine to form a bound electron-hole pair called an exciton. Especially when excitons are formed in the EML 135, the excitons can decay by a radiative recombination process, in which photons are emitted. The type of radiative recombination process can depend on the spin state of the exciton. In some instances, the exciton can be characterized as having a singlet or triplet spin state. In some non-limiting examples, the radiative decay of the singlet exciton can result in fluorescence. In some non-limiting examples, the radiative decay of the triplet exciton can result in phosphorescence.

[0277] Recently, other photon emission mechanisms for OLEDs have been proposed and studied, including but not limited to TADF. In some non-limiting examples, TADF emission occurs through the conversion of triplet excitons to singlet excitons via a reverse intersystem crossing process with the aid of thermal energy, followed by radiative decay of the singlet excitons.

[0278] In some non-limiting examples, the excitons can decay through a non-radiative process in which photons are not released, particularly if the excitons are not formed in the EML 135 .

[0279] In this disclosure, the term "internal quantum efficiency" (IQE) of an OLED device refers to the proportion of all electron-hole pairs generated in the device that decay through radiative recombination processes and emit photons.

[0280] In this disclosure, the term "external quantum efficiency" (EQE) of an OLED device refers to the ratio of charge carriers delivered to the device relative to the number of photons emitted by the device. In some non-limiting examples, an EQE of 100% indicates that one photon is emitted for every electron injected into the device.

[0281] One of ordinary skill in the relevant art will appreciate that, in some non-limiting examples, the EQE of an OLED device can be significantly lower than the IQE of the same device. In some non-limiting examples, the difference between the EQE and IQE of a given device 100 can be attributed to a variety of factors, including but not limited to absorption and reflection of photons by various components of the device 100.

[0282] In some non-limiting examples, optoelectronic device 100 can be an electroluminescent quantum dot device, wherein at least one semiconducting layer 130 includes an active layer including at least one quantum dot. When power source 15 provides current to first electrode 120 and second electrode 140, photons are emitted from the active layer including at least one semiconducting layer 130 therebetween.

[0283] It should be readily understood by a person skilled in the relevant art that the structure of the optoelectronic device 100 can be changed by introducing one or more additional layers (not shown) at appropriate locations within the stack of at least one semiconducting layer 130, including but not limited to a hole blocking layer (not shown), an electron blocking layer (not shown), an additional charge transport layer (not shown) and / or an additional charge injection layer (not shown).

[0284] Barrier coating

[0285] In some non-limiting examples, a barrier coating 1650 may be provided to surround and / or encapsulate the first electrode 120 , the second electrode 140 , and the at least one semiconducting layer 130 of the optoelectronic device 100 and / or various layers of the substrate 110 disposed thereon.

[0286] In some non-limiting examples, a barrier coating 1650 may be provided to inhibit exposure of various layers of the optoelectronic device 100 (including but not limited to: the first electrode 120, the at least one semiconducting layer 130, and the second electrode 140) (including the at least one semiconducting layer 130 and / or the cathode 342) to moisture and / or ambient air, as these layers may be susceptible to oxidation.

[0287] In some non-limiting examples, applying the barrier coating 1650 to a highly non-uniform surface may increase the likelihood of poor adhesion of the barrier coating 1650 to such a surface.

[0288] In some non-limiting examples, the absence of the barrier coating 1650 and / or an improperly applied barrier coating 1650 may cause and / or contribute to defects and / or partial and / or complete failure of the optoelectronic device 100. In some non-limiting examples, an improperly applied barrier coating 1650 may reduce the adhesion of the barrier coating 1650 to the optoelectronic device 100. In some non-limiting examples, poor adhesion of the barrier coating 1650 may increase the likelihood that the barrier coating 1650 will peel, in whole or in part, from the optoelectronic device 100, particularly if the optoelectronic device 100 is bent and / or flexed. In some non-limiting examples, an improperly applied barrier coating 1650 may allow air pockets to be trapped between the barrier coating 1650 and the underlying surface of the optoelectronic device 100 to which the barrier coating 1650 is applied during application of the barrier coating 1650.

[0289] In some non-limiting examples, the barrier coating 1650 may be a thin film encapsulation (TFE) layer 2050 ( Figure 20B ) and can be selectively applied, deposited and / or processed using a variety of techniques, including but not limited to evaporation (including but not limited to thermal evaporation and / or e-beam evaporation), photolithography, printing (including but not limited to inkjet and / or vapor jet printing, roll-to-roll printing and / or micro-contact transfer printing), PVD (including but not limited to sputtering), CVD (including but not limited to PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including but not limited to spin coating, dip coating, line coating and / or spray coating) and / or combinations of any two or more thereof.

[0290] In some non-limiting examples, the barrier coating 1650 can be provided by laminating a pre-formed barrier film onto the optoelectronic device 100. In some non-limiting examples, the barrier coating 1650 can include a multi-layer coating including at least one of an organic material, an inorganic material, and / or any combination thereof. In some non-limiting examples, the barrier coating 1550 can further include a getter material and / or a desiccant.

[0291] Horizontal aspects

[0292] In some non-limiting examples, including in the case of optoelectronic device 100 (which may be an OLED device including a lighting panel), the entire lateral aspect of optoelectronic device 100 may correspond to a single lighting element. Figure 1 The substantially flat cross-sectional profile shown in FIG can extend substantially along the entire lateral aspect of the optoelectronic device 100, such that photons are emitted from the optoelectronic device 100 along substantially its entire lateral extent. In some non-limiting examples, such a single lighting element can be driven by a single driver circuit 300 of the optoelectronic device 100.

[0293] In some non-limiting examples, including where the optoelectronic device 100 includes a display module, the lateral aspect of the optoelectronic device 100 can be subdivided into a plurality of emission regions 1910 of the optoelectronic device 100, wherein the optoelectronic device 100 includes a plurality of emission regions 1910. Figure 1 A cross-sectional aspect of the optoelectronic device 100 within each of the illustrated emission regions 1910 , when excited, results in emission of photons therefrom.

[0294] Launch area

[0295] In some non-limiting examples, the individual emission regions 1910 of the optoelectronic device 100 can be arranged in a lateral pattern. In some non-limiting examples, the pattern can extend along a first lateral direction. In some non-limiting examples, the pattern can also extend along a second lateral direction, which in some non-limiting examples can be substantially perpendicular to the first lateral direction. In some non-limiting examples, the pattern can have multiple elements of such a pattern, each element being characterized by one or more characteristics thereof, including but not limited to, the wavelength of light emitted by its emission region 1910, the shape of such emission region 1910, the size (along one or both of the first and / or second lateral directions), the orientation (relative to one and / or both of the first and / or second lateral directions) and / or the spacing from the previous element in the pattern (relative to one or both of the first and / or second lateral directions). In some non-limiting examples, the pattern can repeat in one or both of the first and / or second lateral directions.

[0296] In some non-limiting examples, each individual emissive region 1910 of the optoelectronic device 100 is associated with and driven by a corresponding driver circuit 300 within the backplane 20 of the optoelectronic device 100, wherein the diode 340 corresponds to the OLED structure of the associated emissive region 1910. In some non-limiting examples, including but not limited to, where the emissive regions 1910 are arranged in a regular pattern extending in both a first (row) lateral direction and a second (column) lateral direction, there can be signal lines 30, 31 in the backplane 20, which can be gate lines (or row select) lines 31 corresponding to each row of emissive regions 1910 extending in the first lateral direction, and signal lines 30, 31, which can be data (or column select) lines 30, corresponding to each column of emissive regions 1910 extending in the second lateral direction. In such a non-limiting configuration, the signal on the row select line 31 can excite the corresponding gate 312 of the switching TFT 310 electrically coupled thereto, and the signal on the data line 30 can excite the corresponding source of the switching TFT 310 electrically coupled thereto, so that the signal on the row select line 31 / data line 30 pair will be electrically coupled through the positive terminal of the power supply 15 (represented by the power supply line VDD 32) and excite the anode 341 of the OLED structure of the emission region 1910 associated with the pair, thereby causing photons to be emitted therefrom, and its cathode 342 is electrically coupled to the negative terminal of the power supply 15.

[0297] In some non-limiting examples, each emission region 1910 of the optoelectronic device 100 corresponds to a single display pixel 340. In some non-limiting examples, each pixel 340 emits light of a given wavelength spectrum. In some non-limiting examples, the wavelength spectrum corresponds to, but is not limited to, a color in the visible spectrum.

[0298] In some non-limiting examples, each emission region 1910 of the optoelectronic device 100 corresponds to a sub-pixel 264x of the display pixel 340. In some non-limiting examples, multiple sub-pixels 264x can be combined to form or represent a single display pixel 340.

[0299] In some non-limiting examples, a single display pixel 340 can be represented by three sub-pixels 2641-2643. In some non-limiting examples, the three sub-pixels 2641-2643 can be represented as R(ed) sub-pixel 2641, G(reen) sub-pixel 2642, and / or B(lue) sub-pixel 2643, respectively. In some non-limiting examples, a single display pixel 340 can be represented by four sub-pixels 264x, where three of such sub-pixels 264x can be represented as R, G, and B sub-pixels 2641-2643, and the fourth sub-pixel 264x can be represented as W(hite) sub-pixel 264x. In some non-limiting examples, the emission spectrum of light emitted by a given sub-pixel 264x corresponds to the color by which the sub-pixel 264x is represented. In some non-limiting examples, the wavelength of the light does not correspond to such a color, but further processing is performed in a manner apparent to one of ordinary skill in the relevant art to convert the wavelength to such a corresponding wavelength.

[0300] Since the wavelengths of sub-pixels 264x of different colors may be different, the optical characteristics of such sub-pixels 264x may be different, especially if a common electrode (including but not limited to: first electrode 120, second electrode 140) with a substantially uniform thickness distribution is used for sub-pixels 264x of different colors.

[0301] When a common electrode (including but not limited to the first electrode 120 and the second electrode 140) having a substantially uniform thickness is provided as the second electrode 140 in an optoelectronic device 100 (which, in some non-limiting examples, may be an OLED device), the optical performance of the optoelectronic device 100 may not be easily fine-tuned based on the emission spectrum associated with each (sub-)pixel 340 / 264x. In some non-limiting examples, the second electrode 140 used in such an OLED device may be a common electrode that coats multiple (sub-)pixels 340 / 264x. As a non-limiting example, such a common electrode may be a relatively thin conductive film having a substantially uniform thickness across the entire optoelectronic device 100. Although efforts have been made in some non-limiting examples to adjust the optical microcavity effect associated with the color of each (sub-)pixel 340 / 264x by varying the thickness of the organic layers disposed within the different (sub-)pixels 340 / 264x, in some non-limiting examples, such an approach may, in at least some cases, provide a significant degree of adjustment of the optical microcavity effect. Additionally, in some non-limiting examples, this approach may be difficult to implement in an OLED display production environment.

[0302] Therefore, the presence of optical interfaces created by many thin film layers and coatings with different refractive indices, as can be used to construct optoelectronic devices 100 including but not limited to OLED devices in some non-limiting examples, can produce different optical microcavity effects for sub-pixels 264x of different colors.

[0303] Some factors that may influence the microcavity effect observed in the optoelectronic device 100 include, but are not limited to, the total path length (which, in some non-limiting examples, may correspond to the total thickness of the optoelectronic device 100 that photons emitted therefrom will pass through before being coupled out) and the refractive indices of the various layers and coatings.

[0304] In some non-limiting examples, the thickness of the modulating electrodes (including but not limited to the first electrode 120 and the second electrode 140) in and across the lateral aspect 410 of the emissive region 1910 of the (sub-)pixel 340 / 264x can affect the observable microcavity effect. In some non-limiting examples, this effect can be attributed to a change in the total optical path length.

[0305] In some non-limiting examples, this may be particularly the case where the electrodes are formed from at least one conductive coating 830. In some non-limiting examples, the total optical path length and the accompanying observable optical microcavity effect may also be modulated by varying the thickness of any layer, including but not limited to the NIC 810, NPC 1120, and / or capping layer (CPL) 3610 ( disposed in a given emission region 1910). Figure 36A ).

[0306] In some non-limiting examples, optical properties of the optoelectronic device 100 and / or in some non-limiting examples, lateral aspects 410 of the emission area 1910 of the (sub-)pixel 340 / 264x that can be changed by modulating at least one optical microcavity effect include, but are not limited to, emission spectrum, intensity (including but not limited to luminous intensity), and / or angular distribution of emitted light, including but not limited to angular dependence of brightness and / or color shift of the emitted light.

[0307] In some non-limiting examples, sub-pixel 264x is associated with a first set of other sub-pixels 264x to represent a first display pixel 340 and is also associated with a second set of other sub-pixels 264x to represent a second display pixel 340, such that the first display pixel and the second display pixel 340 can have the same sub-pixel 264x associated therewith.

[0308] The pattern and / or organization of sub-pixels 264x into display pixels 340 continues to evolve. All current and future patterns and / or organizations are considered to fall within the scope of the present disclosure.

[0309] Non-emitting area

[0310] In some non-limiting examples, each emitting region 1910 of the optoelectronic device 100 is substantially surrounded and separated in at least one lateral direction by one or more non-emitting regions 1920, wherein Figure 1 The structure and / or configuration of the illustrated optoelectronic device 100 along a cross-sectional aspect is varied to substantially suppress photons emitted therefrom. In some non-limiting examples, the non-emissive regions 1920 include those regions that are substantially devoid of the emissive regions 1910 in a lateral aspect.

[0311] Therefore, if Figure 4 As shown in the cross-sectional view of , the lateral topology of the individual layers of the at least one semiconducting layer 130 can vary to define at least one emitting region 1910 surrounded (at least in one lateral direction) by at least one non-emitting region 1920.

[0312] In some non-limiting examples, an emissive region 1910 corresponding to a single display (sub)pixel 340 / 264x may be understood as having a lateral aspect 410 surrounded in at least one lateral direction by at least one non-emissive region 1920 having a lateral aspect 420.

[0313] Non-limiting examples of embodiments will now be described with respect to a cross-section of an optoelectronic device 100 as applied to an emissive region 1910 corresponding to a single display (sub-)pixel 340 / 264x of the optoelectronic device 100 (as an OLED display). Although features of such embodiments are shown as being specific to the emissive region 1910, persons of ordinary skill in the relevant art will understand that, in some non-limiting examples, more than one emissive region 1910 may encompass common features.

[0314] In some non-limiting examples, the first electrode 120 can be disposed over the exposed layer surface 111 of the optoelectronic device 100, and in some non-limiting examples, within at least a portion of the lateral aspect 410 of the emissive region 1910. In some non-limiting examples, at least within the lateral aspect 410 of the emissive region 1910 of the (sub-)pixel 340 / 264x, when the first electrode 120 is deposited, the exposed layer surface 111 can include the TFT insulating layer 280 of each TFT structure 200 constituting the driver circuit 300 corresponding to the emissive region 1910 of a single display (sub-)pixel 340 / 264x.

[0315] In some non-limiting examples, the TFT insulating layer 280 may be formed with an opening 430 extending therethrough to allow the first electrode 120 to be electrically coupled to one of the TFT gate electrode 240, the TFT source electrode 260, and the TFT drain electrode 270 of the TFT structure 200, as shown in FIG. Figure 4 As shown, the electrode includes but is not limited to the TFT drain electrode 270 .

[0316] Those skilled in the art will appreciate that the driving circuit 300 includes a plurality of TFT structures 200, including but not limited to a switching TFT 310, a driving TFT 320 and / or a storage capacitor 330. Figure 4 In the figure, for the purpose of simplicity of illustration, only one TFT structure 200 is shown, but a person skilled in the relevant art should understand that such a TFT structure 200 represents such a plurality of structures including the driving circuit 300.

[0317] In cross-section, in some non-limiting examples, the configuration of each emissive region 1910 can be defined by introducing at least one pixel-defining layer (PDL) 440 that substantially extends through the lateral aspects 420 of the surrounding non-emissive regions 1920. In some non-limiting examples, the PDL 440 can include insulating organic and / or inorganic materials.

[0318] In some non-limiting examples, the PDL 440 is substantially deposited over the TFT insulating layer 280 , but as shown, in some non-limiting examples, the PDL 440 may also extend over at least a portion of the deposited first electrode 120 and / or an outer edge thereof.

[0319] In some non-limiting examples, Figure 4 As shown, the cross-sectional thickness and / or profile of the PDL 440 can impart a substantially valley-shaped configuration to the emissive area 1910 of each (sub)pixel 340 / 264x by providing an area of increased thickness along the boundary of the lateral aspect 420 of the surrounding non-emissive area 1920 and the lateral aspect 410 of the surrounding emissive area 1910 corresponding to the (sub)pixel 340 / 264x.

[0320] In some non-limiting examples, the profile of the PDL 440 can have a reduced thickness beyond such a valley-shaped configuration, including but not limited to a boundary between a lateral aspect 420 away from the surrounding non-emissive region 1920 and a lateral aspect 410 of the surrounded emissive region 1910, and in some non-limiting examples, substantially well within the lateral aspect 420 of such non-emissive region 1920.

[0321] Although the PDL 440 has been generally shown as having linearly inclined surfaces to form a valley-shaped configuration that defines an emission area 1910 surrounded by it, it will be understood by those skilled in the relevant art that, in some non-limiting examples, at least one of the shape, aspect ratio, thickness, width, and / or configuration of such PDL 440 may be varied. As non-limiting examples, the PDL 440 may be formed with a steeper or more gradually inclined portion. In some non-limiting examples, such a PDL 440 may be configured to extend substantially vertically away from the surface on which it is deposited, the surface covering one or more edges of the first electrode 120. In some non-limiting examples, such a PDL 440 may be configured to deposit at least one semiconductive layer 130 thereon by a solution processing technique (including but not limited to by printing, including but not limited to inkjet printing).

[0322] In some non-limiting examples, at least one semiconductive layer 130 can be deposited over an exposed layer surface 111 of the optoelectronic device 100, including at least a portion of the lateral aspect 410 of such an emission region 1910 of the (sub-)pixel 340 / 264x. In some non-limiting examples, such exposed layer surface 111 can include the first electrode 120 when depositing the at least one semiconductive layer 130 (and / or its layers 131, 133, 135, 137, 139).

[0323] In some non-limiting examples, the at least one semiconductive layer 130 may also extend beyond the lateral aspect 410 of the emissive region 1910 of the (sub-)pixel 340 / 264x and at least partially within the lateral aspect 420 of the surrounding non-emissive region 1920. In some non-limiting examples, when the at least one semiconductive layer 130 is deposited, such exposed layer surfaces 111 of such surrounding non-emissive region 1920 may include PDL 440.

[0324] In some non-limiting examples, the second electrode 140 can be disposed over an exposed layer surface 111 of the optoelectronic device 100, including at least a portion of the lateral aspect 410 of the emission region 1910 of the (sub-)pixel 340 / 264x. In some non-limiting examples, such exposed layer surface 111 can include at least one semiconducting layer 130 when the second electrode 140 is deposited, at least within the lateral aspect 410 of the emission region 1910 of the (sub-)pixel 340 / 264x.

[0325] In some non-limiting examples, the second electrode 140 may also extend beyond the lateral aspect 410 of the emissive region 1910 of the (sub-)pixel 340 / 264x and at least partially within the lateral aspect 420 of the surrounding non-emissive region 1920. In some non-limiting examples, when the second electrode 140 is deposited, such exposed layer surfaces 111 of such surrounding non-emissive region 1920 may include the PDL 440.

[0326] In some non-limiting examples, the second electrode 140 can extend through substantially all or a majority of the lateral aspect 420 of the surrounding non-emitting region 1920 .

[0327] Transmittance

[0328] Because the optoelectronic device 100 (which, in some non-limiting examples, may be an OLED device) emits photons through the first electrode 120 (in the case of a bottom-emitting and / or dual-emitting device) and one or both of the substrate 110 and / or the second electrode 140 (in the case of a top-emitting and / or dual-emitting device), it may be desirable to make one or both of the first electrode 120 and / or the second electrode 140 substantially photon (or light) transmissive ("transmissive"), in some non-limiting examples, at least across a majority of the lateral aspects 410 of the emission region 1910 of the optoelectronic device 100. In the present disclosure, such transmissive elements, including but not limited to electrodes (including but not limited to: first electrode 120, second electrode 140), the materials forming such elements, and / or properties thereof, may include elements, materials, and / or properties thereof that are substantially transmissive ("transparent") and / or, in some non-limiting examples, partially transmissive ("semi-transparent"), in some non-limiting examples, over at least one wavelength range.

[0329] Various mechanisms have been employed to impart transmissive properties to the optoelectronic device 100 , at least across a substantial portion of the lateral aspect 410 of its emissive region 1910 .

[0330] In some non-limiting examples, including but not limited to cases where the optoelectronic device 100 is a bottom-emitting device and / or a dual-sided emitting device, the TFT structure 200 of the driving circuit 300 associated with the emission area 1910 of the (sub-)pixel 340 / 264x can be positioned within the lateral aspect 420 of the surrounding non-emitting area 1920 to avoid affecting the transmission properties of the substrate 110 within the lateral aspect 410 of the emission area 1910, and the TFT structure can at least partially reduce the transmittance of the surrounding substrate 110.

[0331] In some non-limiting examples, where the optoelectronic device 100 is a dual-sided emitting device, the first of the first and second electrodes 120, 140 may be made substantially transmissive (including but not limited to, by at least one of the mechanisms disclosed herein) with respect to a lateral aspect 410 of the emission region 1910 of the (sub-)pixel 340 / 264x, and the second of the first and second electrodes 120, 140 may be made substantially transmissive (including but not limited to, by at least one of the mechanisms disclosed herein) with respect to a lateral aspect 410 of an adjacent and / or neighboring (sub-)pixel 340 / 264x. Thus, the lateral aspect 410 of the first emission region 1910a of the (sub)pixel 340 / 264x can be made substantially top emitting, while the lateral aspect 410 of the second emission region 1910b of the adjacent (sub)pixel 340 / 264x can be made substantially bottom emitting, so that a subset of the (sub)pixels 340 / 264x are substantially top emitting and a subset of the (sub)pixels 340 / 264x are substantially bottom emitting (in an alternating sequence of (sub)pixels 340 / 264x), while only a single electrode (including but not limited to: the first electrode 120, the second electrode 140) of each (sub)pixel 340 / 264x is made substantially transmissive.

[0332] In some non-limiting examples, the mechanism for making electrodes (including but not limited to: first electrode 120, second electrode 140) (first electrode 120 in the case of a bottom-emitting device and / or a double-sided emission device and / or second electrode 140 in the case of a top-emitting device and / or a double-sided emission device) transmissive is to form such electrodes having a transmissive film.

[0333] In some non-limiting examples, the sheet resistance R2 of the conductive coating 830 can generally correspond to the sheet resistance of the conductive coating 830 measured in isolation from other components, layers, and / or features of the optoelectronic device 100. In some non-limiting examples, the conductive coating 830 can be formed as a thin film. Therefore, in some non-limiting examples, the sheet resistance R3 of the conductive coating 830 can be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance R3 can be less than about 10 Ω / sqr, less than about 5 Ω / sqr, less than about 1 Ω / sqr, less than about 0.5 Ω / sqr, 0.2 Ω / sqr, and / or less than about 0.1 Ω / sqr.

[0334] In some non-limiting examples, the conductive coating 830 may include a conductive coating material 831 .

[0335] In some non-limiting examples, the conductive coating material 831 may include a metal having a bond dissociation energy of the conductive coating material 831 of less than 300 kJ / mol, less than 200 kJ / mol, less than 165 kJ / mol, less than 150 kJ / mol, less than 100 kJ / mol, less than 50 kJ / mol and / or less than 20 kJ / mol.

[0336] In some non-limiting examples, the conductive coating material 831 may include an element selected from the group consisting of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, and / or yttrium (Y). In some non-limiting examples, the element may include K, Na, Li, Ba, Cs, Tb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Mg, Zn, Cd, and / or Yb. In some non-limiting examples, the element may include Mg, Ag, Al, Yb, and / or Li. In some non-limiting examples, the element may include Mg, Ag, and / or Yb. In some non-limiting examples, the element may include Mg and / or Ag. In some non-limiting examples, the element may be Ag.

[0337] In some non-limiting examples, the conductive coating material 831 may comprise a pure metal. In some non-limiting examples, the conductive coating 830 is a pure metal. In some non-limiting examples, the conductive coating 830 is pure or substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least about 95%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and / or at least about 99.9995%. In some non-limiting examples, the conductive coating 830 is pure or substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least about 95%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and / or at least about 99.9995%.

[0338] In some non-limiting examples, the conductive coating 830 may include an alloy. In some non-limiting examples, the alloy may be an alloy containing Ag, an alloy containing Mg, and / or an alloy containing AgMg. In some non-limiting examples, the alloy composition of the alloy containing AgMg may range from 1:10 (Ag:Mg) to about 10:1 by volume.

[0339] In some non-limiting examples, the conductive coating material 831 may include other metals instead of Ag and / or in combination with Ag. In some non-limiting examples, the conductive coating material 831 may include an alloy of Ag and at least one other metal. In some non-limiting examples, the conductive coating material 831 may include an alloy of Ag with Mg and / or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of approximately 5% Ag to approximately 95% Ag by volume, with the remainder being other metals. In some non-limiting examples, the conductive coating material 831 includes Ag and Mg. In some non-limiting examples, the conductive coating material 831 includes an Ag:Mg alloy having a composition of approximately 1:10 to approximately 10:1 by volume. In some non-limiting examples, the conductive coating material 831 includes Ag and Yb. In some non-limiting examples, the conductive coating material 831 includes a Yb:Ag alloy having a composition of about 1:20 to about 1-10:1 by volume. In some non-limiting examples, the conductive coating material 831 includes Mg and Yb. In some non-limiting examples, the conductive coating material 831 includes a Mg:Yb alloy. In some non-limiting examples, the conductive coating material 831 includes Ag, Mg, and Yb. In some non-limiting examples, the conductive coating material 831 includes an Ag:Mg:Yb alloy.

[0340] In some non-limiting examples, the conductive coating 830 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be oxygen (O), sulfur (S), nitrogen (N) and / or carbon (C). One of ordinary skill in the relevant art will appreciate that, in some non-limiting examples, due to the presence of such additional elements in the source material, the equipment for deposition and / or the vacuum chamber environment, such additional elements may be incorporated into the conductive coating 830 as contaminants. In some non-limiting examples, the concentration of such additional elements may be limited to below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the conductive coating 830. In some non-limiting examples, the concentration of the non-metallic elements in the conductive coating material 831 can be less than about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%. In some non-limiting examples, the conductive coating 830 has a composition in which the combined amount of O and C is less than about 10%, about 5%, about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%.

[0341] It has now been discovered, somewhat surprisingly, that reducing the concentration of certain non-metallic elements in the conductive coating 830 can facilitate selected deposition of the conductive coating 830. Without wishing to be bound by any particular theory, it can be hypothesized that certain non-metallic elements, such as, for example, O and / or C, as non-limiting examples, when present in the vapor flux and / or deposition chamber and / or environment of the conductive coating 830, can be deposited on the surface of the NIC 810 to act as nucleation sites for the metallic elements of the conductive coating 830. It can be hypothesized that reducing the concentration of such non-metallic elements that can act as nucleation sites may help to reduce the amount of conductive coating material 831 deposited on the exposed layer surface 111 of the NIC 810.

[0342] In some non-limiting examples, the conductive coating 830 and the metal coating 138 can include common metals. In some non-limiting examples, the conductive coating material 831 and the metal coating material have the same composition.

[0343] In some non-limiting examples, the conductive coating 830 can include multiple layers of a conductive coating material 831. In some non-limiting examples, the conductive coating material 831 of a first layer in the multiple layers can be different from the conductive coating material 831 of a second layer in the multiple layers. In some non-limiting examples, the conductive coating 830 can include a multilayer coating. In some non-limiting examples, such a multilayer coating can include Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, and / or Yb / Mg / Ag.

[0344] In some non-limiting examples, particularly in the case of such thin conductive films, relatively thin layer thicknesses can reach substantially tens of nm to help improve transmission quality and favorable optical properties for optoelectronic device 100 (including but not limited to reduced microcavity effects).

[0345] In some non-limiting examples, such thin conductive films may include intermediate-stage films.

[0346] In some non-limiting examples, reducing the thickness of electrodes (including but not limited to the first electrode 120 and the second electrode 140 ) to improve transmission quality may be accompanied by an increase in the sheet resistance of the electrodes.

[0347] In some non-limiting examples, an optoelectronic device 100 having at least one electrode (including but not limited to the first electrode 120 and the second electrode 140) with high sheet resistance generates a large current-resistance (IR) drop during operation when coupled to a power source 15. In some non-limiting examples, this IR drop can be compensated to some extent by increasing the voltage level (VDD) of the power source 15. However, in some non-limiting examples, increasing the voltage level of the power source 15 to compensate for the IR drop due to the high sheet resistance for at least one (sub)pixel 340 / 264x may require increasing the voltage levels supplied to other components to maintain efficient operation of the optoelectronic device 100.

[0348] In some non-limiting examples, in order to reduce the power requirements of the optoelectronic device 100 (by employing at least one thin film layer of any combination of TCO, thin metal film and / or thin metal alloy film) without significantly affecting the ability to make the electrodes (including but not limited to: the first electrode 120, the second electrode 140) substantially transmissive, auxiliary electrodes 1750 and / or bus bars 4150 can be formed on the optoelectronic device 100 to allow current to be more efficiently transmitted to the various emission regions of the optoelectronic device 100 while reducing the sheet resistance of the transmissive electrode and its associated IR drop.

[0349] In some non-limiting examples, the sheet resistance specification of the common electrode (including but not limited to the first electrode 120 and the second electrode 140) of the optoelectronic device 100 (which may be an AMOLED display in some non-limiting examples) may vary depending on a number of parameters, including but not limited to the (panel) size of the optoelectronic device 100 and / or the voltage variation tolerance across the optoelectronic device 100. In some non-limiting examples, the sheet resistance specification may increase (i.e., specify a lower sheet resistance) as the panel size increases. In some non-limiting examples, the sheet resistance specification may increase as the voltage variation tolerance decreases.

[0350] In some non-limiting examples, sheet resistance specifications can be used to derive example thicknesses of the auxiliary electrode 1750 and / or bus bar 4150 to meet such specifications for various panel sizes. In one non-limiting example, an aperture ratio of 0.64 is assumed for all display panel sizes, and the thickness of the auxiliary electrode 1750 is calculated for various example panel sizes, such as voltage tolerances of 0.1V and 0.2V in Table 1 below.

[0351] Table 1 Example auxiliary electrode thickness for various panel sizes and voltage tolerances

[0352]

[0353] As a non-limiting example, for a top-emitting device, the second electrode 140 can be made transmissive. On the other hand, in some non-limiting examples, such auxiliary electrodes 1750 and / or bus bars 4150 may not be substantially transmissive, but may be electrically coupled to the second electrode 140 (including but not limited to, by depositing a conductive coating 830 therebetween) to reduce the effective sheet resistance of the second electrode 140.

[0354] In some non-limiting examples, such auxiliary electrodes 1750 can be positioned and / or shaped in one or both of the lateral and / or cross-sectional aspects so as not to interfere with the emission of photons from the lateral aspect 410 of the emission region 1910 of the (sub)pixel 340 / 264x.

[0355] In some non-limiting examples, the mechanism for manufacturing the first electrode 120 and / or the second electrode 140 is to form such electrodes in a pattern across at least a portion of the lateral aspect 410 of the emissive region 1910 thereof (and / or in some non-limiting examples, across at least a portion of the lateral aspect 420 of the non-emissive region 1920 surrounding the electrode). In some non-limiting examples, such a mechanism can be employed to form the auxiliary electrode 1750 and / or the bus bar 4150 in a position and / or shape in one or both of the lateral aspect and / or the cross-sectional aspect so as not to interfere with the emission of photons from the lateral aspect 410 of the emissive region 1910 of the (sub)pixel 340 / 264x, as discussed above.

[0356] In some non-limiting examples, the optoelectronic device 100 can be configured such that it is substantially devoid of conductive oxide material in the optical path of photons emitted by the optoelectronic device 100. As a non-limiting example, in a lateral aspect 410 corresponding to at least one emissive region 1910 of a (sub-)pixel 340 / 264x, at least one of the layers and / or coatings deposited after the at least one semiconducting layer 130 (including but not limited to the second electrode 140, the NIC 810, and / or any other layers and / or coatings deposited thereon) can be substantially devoid of any conductive oxide material. In some non-limiting examples, the substantial absence of any conductive oxide material can reduce the absorption and / or reflection of light emitted by the optoelectronic device 100. As a non-limiting example, conductive oxide materials (including but not limited to ITO and / or IZO) can absorb light in at least the B (blue) region of the visible spectrum, which can generally reduce the efficiency and / or performance of the optoelectronic device 100.

[0357] In some non-limiting examples, combinations of these and / or other mechanisms may be employed.

[0358] Additionally, in some non-limiting examples, in addition to rendering one or more of the first electrode 120, the second electrode 140, the auxiliary electrode 1750 and / or the bus bar 4150 substantially transmissive across at least a majority of the lateral aspects 410 of the emission area 1910 corresponding to the (sub-)pixel 340 / 264x of the optoelectronic device 100 so as to allow photons to be emitted substantially across the lateral aspects 410 thereof, it may be desirable to render at least one of the lateral aspects 420 of the surrounding non-emissive area 1920 of the optoelectronic device 100 substantially transmissive in the bottom and top directions, thereby rendering the optoelectronic device 100 substantially transmissive with respect to light incident on its external surface, such that a majority of such externally incident light can be transmitted through the optoelectronic device 100, in addition to the emission of photons generated internally of the optoelectronic device 100 as disclosed herein (top emission, bottom emission and / or dual-sided emission).

[0359] Conductive coating

[0360] In the present disclosure, the terms "conductive coating" and "electrode coating" may be used interchangeably to refer to similar concepts, and in some non-limiting examples, references herein to a conductive coating 830 patterned by selective deposition of a NIC 810 and / or NPC 1120 may apply to an electrode coating patterned by selective deposition of a patterned coating 810, 1120. In some non-limiting examples, references to an electrode coating may refer to a coating having a specific composition as described herein. Similarly, in the present disclosure, the terms "conductive coating material" and "electrode coating material" may be used interchangeably to refer to similar concepts and references herein to a conductive coating material 831.

[0361] In some non-limiting examples, the conductive coating material 831 ( Figure 8 ) can be a substantially pure element. In some additional non-limiting examples, the conductive coating 830 comprises a substantially pure element. In some other non-limiting examples, the conductive coating 830 comprises two or more elements, which can be provided, for example, in the form of an alloy or a mixture.

[0362] In some non-limiting examples, at least one component of such a mixture is not deposited on such a surface, may not be deposited on such an exposed layer surface 111 during deposition, and / or may be deposited in a small amount relative to a certain amount of the remaining components of such a mixture deposited on such an exposed layer surface 111.

[0363] In some non-limiting examples, such at least one component of such a mixture can have a property relative to the remaining components to selectively deposit substantially only the remaining components. In some non-limiting examples, the property can be vapor pressure.

[0364] In some non-limiting examples, such at least one component of such a mixture may have a lower vapor pressure relative to the remaining components.

[0365] In some non-limiting examples, the conductive coating material 831 may be a copper (Cu)-magnesium (Cu-Mg) mixture, where Cu has a lower vapor pressure than Mg.

[0366] In some non-limiting examples, the conductive coating material 831 used to deposit the conductive coating 830 onto the exposed layer surface 111 can be substantially pure.

[0367] In some non-limiting examples, the conductive coating material 831 used to deposit Mg is, and in some non-limiting examples, includes, substantially pure Mg. In some non-limiting examples, the substantially pure Mg can exhibit substantially similar properties to pure Mg. In some non-limiting examples, the purity of Mg can be about 95% or greater, about 98% or greater, about 99% or greater, about 99.9% or greater, and / or about 99.99% or greater.

[0368] In some non-limiting examples, the conductive coating 830 in the optoelectronic device according to various examples includes Mg. In some non-limiting examples, the conductive coating 830 includes substantially pure Mg. In some non-limiting examples, the conductive coating 830 includes other metals instead of Mg and / or in combination with Mg. In some non-limiting examples, the conductive coating 830 includes an alloy of Mg with one or more other metals. In some non-limiting examples, the conductive coating 830 includes an alloy of Mg with Yb, Cd, Zn and / or Ag. In some non-limiting examples, such an alloy can be a binary alloy having a composition ranging from about 5% by volume Mg to about 95% by volume Mg, with the remainder being other metals. In some non-limiting examples, the conductive coating 830 includes a Mg:Ag alloy having a composition ranging from about 1:10 to about 10:1 by volume.

[0369] In some non-limiting examples, the conductive coating 830 and / or the conductive coating material 831 in the optoelectronic devices according to various examples include Ag. In some non-limiting examples, the conductive coating 830 and / or the conductive coating material 831 include substantially pure Ag. In some non-limiting examples, the conductive coating 830 and / or the conductive coating material 831 include other metals in place of and / or in combination with Ag. In some non-limiting examples, the conductive coating 830 and / or the conductive coating material 831 include an alloy of Ag with one or more other metals. In some non-limiting examples, the conductive coating 830 and / or the conductive coating material 831 include an alloy of Ag with Mg, Yb, and / or Zn. In some non-limiting examples, such an alloy may be a binary alloy having a composition of approximately 5% to approximately 95% Ag by volume, with the remainder being the other metal. In some non-limiting examples, the conductive coating 830 and / or the conductive coating material 831 include Ag and Mg. Non-limiting examples of such conductive coatings 830 and / or conductive coating materials 831 include Mg:Ag alloys having a composition of about 1:10 to about 10:1 by volume. In some non-limiting examples, the conductive coatings 830 and / or conductive coating materials 831 include Ag and Yb. Non-limiting examples of such conductive coatings 830 include Yb:Ag alloys having a composition of about 1:20 to about 10:1. In some non-limiting examples, the conductive coatings 830 include Mg and Yb, such as a Mg:Yb alloy. In some non-limiting examples, the conductive coatings 830 and / or conductive coating materials 831 include Ag, Mg, and Yb, such as an Ag:Mg:Yb alloy.

[0370] In some non-limiting examples, the conductive coating 830 includes two or more layers having different compositions from one another. In some non-limiting examples, the two or more layers of the conductive coating 830 include different elements from one another. Non-limiting examples of such conductive coatings 830 include multilayer coatings formed from Yb / Ag, Yb / Mg, Yb / Mg:Ag, Mg / Ag, Yb / Yb:Ag, Yb / Ag / Mg, and / or Yb / Mg / Ag.

[0371] Patterning

[0372] As a result of the foregoing, it may be desirable to selectively pattern-deposit device features on the exposed layer surface 111 of the front panel 10 layer of the optoelectronic device 100 across the lateral aspects 410 of the emissive region 1910 of the (sub-)pixel 340 / 264x and / or the lateral aspects 420 of the non-emissive region 1920 surrounding the emissive region 1910, including but not limited to at least one of the following: the first electrode 120, the second electrode 140, the auxiliary electrode 1750, and / or the bus bar 4150 and / or conductive elements electrically coupled thereto. In some non-limiting examples, the first electrode 120, the second electrode 140, the auxiliary electrode 1750, and / or the bus bar 4150 may be deposited in at least one conductive coating of the plurality of conductive coatings 830.

[0373] However, it may not be feasible to use a shadow mask such as an FMM, which can be used to form relatively small features, on the order of tens of microns or less, to achieve such patterning of the conductive coating 830, because, in some non-limiting examples:

[0374] FMMs may deform during deposition processes, especially at high temperatures, such as might be used for the deposition of thin conductive films.

[0375] Limitations on the mechanical (including but not limited to tensile) strength of FMMs and / or shadowing effects, especially in high-temperature deposition processes, may impose constraints on the aspect ratios of features achievable using such FMMs;

[0376] The type and number of patterns achievable using such an FMM may therefore be constrained, as a non-limiting example, each portion of the FMM will be physically supported, such that in some non-limiting examples, some patterns may not be achievable in a single processing stage, including as a non-limiting example, where the pattern specifies an isolated feature;

[0377] Such FMMs may exhibit a tendency to warp during high-temperature deposition processes, which, in some non-limiting examples, may distort the shape and position of the pores therein, which may result in changes in the selective deposition pattern and reduced performance and / or yield;

[0378] An FMM that can be used to create a repeating structure distributed across the entire surface of the optoelectronic device 100 may require the formation of a large number of holes in the FMM, which may compromise the structural integrity of the FMM;

[0379] Repeated use of FMMs in successive depositions, especially in metal deposition processes, can cause the deposited material to adhere to them, which can obscure the features of the FMM and potentially cause changes in the selective deposition pattern, resulting in decreased performance and / or yield.

[0380] While FMMs can be periodically cleaned to remove adhered non-metallic material, such cleaning procedures may not be suitable for adhered metal and, even then, may be time consuming and / or expensive in some non-limiting examples; and

[0381] Regardless of any such cleaning processes, continued use of such FMMs, especially in high temperature deposition processes, may render them ineffective in producing the desired patterning, at which point they may be discarded and / or replaced in a complex and expensive process.

[0382] Figure 5 An example cross-sectional view of a device 500 is shown that is substantially similar to the optoelectronic device 100, but further includes a plurality of raised PDLs 440 across the lateral aspects 420 of the non-emissive regions 1920 surrounding the lateral aspects 410 of the emissive regions 1910 corresponding to the (sub)pixels 340 / 264x.

[0383] When the conductive coating 830 is deposited, in some non-limiting examples, using an open mask and / or maskless deposition process, the conductive coating 830 is deposited across the lateral aspects 410 of the emissive regions 1910 corresponding to the (sub-)pixels 340 / 264x to form the second electrodes 140 (in the figure) thereon, and also across the lateral aspects 420 of the non-emissive regions 1920 surrounding them to form a region of the conductive coating 830 on top of the PDL 440. To ensure that each (segment) of the second electrode 140 is not electrically coupled to any of the at least one conductive region, the thickness of the PDL 440 is greater than the thickness of the second electrode 140. In some non-limiting examples, as shown, the PDL 440 can be provided with an undercut profile to further reduce the likelihood that any (segment) of the second electrode 140 will be electrically coupled to any of the at least one conductive region.

[0384] In some non-limiting examples, applying the barrier coating 1650 over the device 500 may result in poor adhesion of the barrier coating 1650 to the device 500 given the highly non-uniform surface topography of the device 500 .

[0385] In some non-limiting examples, it may be desirable to tune the optical microcavity effect associated with sub-pixels 264x of different colors (and / or wavelengths) by varying the thickness of at least one semiconducting layer 130 (and / or layers thereof) across the lateral aspect 410 of the emissive area 1910 of a sub-pixel 264x corresponding to one color relative to the lateral aspect 410 of the emissive area 1910 of the sub-pixel 264x corresponding to another color. In some non-limiting examples, patterning using an FMM may not provide the precision required to provide such optical microcavity tuning effects in at least some cases and / or in some non-limiting examples in a production environment for OLED displays.

[0386] Nucleation-inhibiting and / or promoting material properties

[0387] In some non-limiting examples, a conductive coating 830 that may be used as or as at least one of multiple layers of a thin conductive film to form device features (including but not limited to at least one of the following: a first electrode 120, a second electrode 140, an auxiliary electrode 1750 and / or a bus bar 4150 and / or a conductive element electrically coupled thereto) may exhibit a relatively low affinity for deposition on an exposed layer surface 111 of an underlying material, thereby inhibiting deposition of the conductive coating 830.

[0388] The relative affinity, or lack thereof, of a material and / or its properties for depositing the conductive coating 830 thereon may be referred to as "nucleation promoting" and / or "nucleation inhibiting," respectively.

[0389] In this disclosure, "nucleation inhibiting" refers to coatings, materials, and / or layers thereof whose surfaces exhibit a relatively low affinity for (deposition of) the conductive coating 830 thereon, such that deposition of the conductive coating 830 on such surfaces is inhibited.

[0390] In this disclosure, "nucleation promoting" refers to a coating, material, and / or layer thereof whose surface exhibits a relatively high affinity for (deposition of) the conductive coating 830 thereon, such that deposition of the conductive coating 830 on such surface is promoted.

[0391] The term "nucleation" within these terms refers to the nucleation stage of the thin film forming process, where monomers in the gas phase condense onto a surface to form nuclei.

[0392] Without wishing to be bound by a particular theory, it is hypothesized that the shape and size of such nuclei and the subsequent growth of such nuclei into islands and subsequently into thin films may depend on a number of factors including, but not limited to, interfacial tension between vapor, surface, and / or condensed film nuclei.

[0393] In the present disclosure, this affinity can be measured in a variety of ways.

[0394] One measure of the nucleation inhibition and / or nucleation promotion properties of a surface is the initial adhesion probability S0 of the surface for a given conductive material (including but not limited to Mg). In this disclosure, the terms "adhesion probability" and "adhesion coefficient" are used interchangeably.

[0395] In some non-limiting examples, the sticking probability S may be given by:

[0396]

[0397] where N 吸附 is the number of adsorbed monomers (“adatoms”) that remain on the exposed layer surface 111 (ie, incorporated into the membrane), and N 总计 is the total number of monomers impinging on the surface. An adhesion probability S equal to 1 indicates that all monomers impinging on the surface are adsorbed and subsequently incorporated into the growing film. An adhesion probability S equal to 0 indicates that all monomers impinging on the surface are desorbed and subsequently no film is formed on the surface. The adhesion probability S of a metal on various surfaces can be estimated using various techniques for measuring the adhesion probability S, including but not limited to the double quartz crystal microbalance (QCM) technique as described by Walker et al., J. Phys. Chem. C 2007, 111, 765 (2006).

[0398] As the density of islands increases (e.g., increasing the average film thickness), the sticking probability S may change. As a non-limiting example, a low initial sticking probability S0 may increase as the average film thickness increases. This can be understood based on the difference in sticking probability S between a region of the surface without islands (as a non-limiting example, the bare substrate 110) and a region with a high density of islands. As a non-limiting example, a monomer impacting an island surface may have a sticking probability S close to 1.

[0399] Thus, the initial adhesion probability S0 can be designated as the adhesion probability S of the surface before any significant number of critical nuclei are formed. One measure of the initial adhesion probability S0 can relate to the adhesion probability S of the material surface during the initial stages of material deposition, where the average thickness of the deposited material across the entire surface is equal to or below a threshold. In some non-limiting examples, the threshold value for the initial adhesion probability S0 can be designated as 1 nm by way of non-limiting example. Average adhesion probability Then it can be given by:

[0400]

[0401] Among them S 成核 is the sticking probability S of the island coverage area, and A 成核 is the percentage of substrate surface area covered by islands.

[0402] based on Figure 6 As shown in the energy distributions 610, 620, 630, it can be assumed that the NIC 810 material exhibits a relatively low desorption activation energy (E des 631) and / or relatively high surface diffusion activation energy (E s 621) may be particularly advantageous for use in a variety of applications.

[0403] Another measure of the nucleation inhibiting and / or nucleation promoting properties of a surface is the initial deposition rate of a given conductive material (including but not limited to Mg) on the surface relative to the initial deposition rate of the same conductive material on a reference surface, where both surfaces are subjected to and / or exposed to an evaporative flux of the conductive material.

[0404] Selective coatings for influencing nucleation inhibiting and / or promoting material properties

[0405] In some non-limiting examples, one or more selective coatings 710 ( Figure 7 ) can be selectively deposited on at least a first portion 701 ( ) of an exposed layer surface 111 of an underlying material to be presented for deposition of a thin film conductive coating 830 thereon. Figure 7 ). With respect to the conductive coating 830, this selective coating 710 has nucleation inhibiting properties that are different from (and / or opposite to) the properties of the exposed layer surface 111 of the underlying material. In some non-limiting examples, there may be a second portion 702 ( Figure 7 ), on which no such selective coating 710 is deposited.

[0406] Such selective coating 710 may be a NIC 810 and / or a nucleation promoting coating (NPC 1120 ( Figures 11A-11B )).

[0407] In some non-limiting examples, the NIC 810 can be disposed on the exposed surface 111 of the underlying metal coating 138, such as in Figure 35 , as shown as a non-limiting example. It will be understood by those skilled in the relevant art that such a metal coating 138 may be (at least) one of the multiple layers of the optoelectronic device 100. The metal coating 138 may include a metal coating material. It will be understood by those skilled in the relevant art that the metal coating 138 and the metal coating material comprising the metal coating, particularly when disposed as a film and under conditions and / or mechanisms substantially similar to those employed for depositing the second electrode 140, may exhibit very similar optical and / or other properties.

[0408] In some non-limiting examples, sheet resistance is a property of a component, layer, and / or part that can alter the characteristics of current flowing through such component, layer, and / or part. In some non-limiting examples, the sheet resistance R1 of the metal coating 138 can generally correspond to the sheet resistance of the metal coating 138 measured in isolation from other components, layers, and / or parts of the optoelectronic device 100. In some non-limiting examples, the metal coating 138 can be formed as a thin film. Therefore, in some non-limiting examples, the sheet resistance R1 of the metal coating 138 can be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance R1 can be about 0.1-1,000 Ω / sqr, about 1-100 Ω / sqr, about 2-50 Ω / sqr, about 3-30 Ω / sqr, about 4-20 Ω / sqr, about 5-15 Ω / sqr, and / or about 10-12 Ω / sqr.

[0409] In some non-limiting examples, the bond dissociation energy of the metal can correspond to the standard state enthalpy change measured at 298 K from the breakage of a bond of a diatomic molecule formed by two identical atoms of the metal. As a non-limiting example, the bond dissociation energy can be determined based on known literature, including but not limited to Luo, Yu-ran, "Bond dissociation energies" (2010). In some non-limiting examples, the metal coating material can include a metal having a bond dissociation energy of at least 10 kJ / mol, at least 50 kJ / mol, at least 100 kJ / mol, at least 150 kJ / mol, at least 180 kJ / mol, and / or at least 200 kJ / mol.

[0410] In some non-limiting examples, the metal coating material may include a metal having an electronegativity less than about 1.4, about 1.3, and / or about 1.2.

[0411] In some non-limiting examples, the metal coating material may include an element selected from the group consisting of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), and / or tungsten (W). In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Mg, Zn, Cd, and / or Yb. In some non-limiting examples, the element may include Sn, Ni, Ti, Pd, Cr, Fe and / or Co. In some non-limiting examples, the element may include Zr, Pt, V, Nb, Ir and / or Os. In some non-limiting examples, the element may include Ta, Mo and / or W. In some non-limiting examples, the element may include Mg, Ag, Al, Yb and / or Li. In some non-limiting examples, the element may include Mg, Ag and / or Yb. In some non-limiting examples, the element may include Mg and / or Ag. In some non-limiting examples, the element may be Ag.

[0412] In some non-limiting examples, the metal coating material may include a pure metal. In some non-limiting examples, the metal coating material is a pure metal. In some non-limiting examples, the metal coating material is pure Ag or substantially pure Ag. In some non-limiting examples, the metal coating material is pure Mg or substantially pure Mg. In some non-limiting examples, the metal coating material is pure Al or substantially pure Al.

[0413] In some non-limiting examples, the metal coating material may include an alloy. In some non-limiting examples, the alloy may be an alloy containing Ag and / or an alloy containing AgMg.

[0414] In some non-limiting examples, the metal coating material may include other metals in place of Ag and / or in combination with Ag. In some non-limiting examples, the metal coating material may include an alloy of Ag and at least one other metal. In some non-limiting examples, the metal coating material may include an alloy of Ag with Mg and / or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of approximately 5% Ag to approximately 95% Ag by volume, with the remainder being other metals. In some non-limiting examples, the metal coating material includes Ag and Mg. In some non-limiting examples, the metal coating material includes an Ag:Mg alloy having a composition of approximately 1:10 to approximately 10:1 by volume. In some non-limiting examples, the metal coating material includes Ag and Yb. In some non-limiting examples, the metal coating material includes a Yb:Ag alloy having a composition of approximately 1:20 to approximately 1-10:1 by volume. In some non-limiting examples, the metal coating material includes Mg and Yb. In some non-limiting examples, the metal coating material includes Mg:Yb alloy. In some non-limiting examples, the metal coating material includes Ag, Mg, and Yb. In some non-limiting examples, the metal coating material includes Ag:Mg:Yb alloy.

[0415] In some non-limiting examples, the metal coating material may include oxygen (O). In some non-limiting examples, the metal coating material may include at least one metal and O. In some non-limiting examples, the metal coating material may include a metal oxide. In some non-limiting examples, the metal oxide includes zinc, indium (I), tin (Sn), antimony (Sb) and / or gallium (Ga). In some non-limiting examples, the metal oxide may be a transparent conductive oxide (TCO). In some non-limiting examples, the TCO may include indium oxide, tin oxide, antimony oxide and / or gallium oxide. In some non-limiting examples, the TCO may include indium titanium oxide (ITO), ZnO, indium zinc oxide (IZO) and / or indium gallium zinc oxide (IGZO). In some non-limiting examples, the TCO may be electrically doped with other elements.

[0416] In some non-limiting examples, the metallic coating 138 may be formed of a metal and / or a metal alloy.

[0417] In some non-limiting examples, the metal coating 138 may include at least one metal or metal alloy and at least one metal oxide.

[0418] In some non-limiting examples, the metal coating 138 can include multiple layers of a metal coating material. In some non-limiting examples, the metal coating material of a first layer in the multiple layers can be different from the metal coating material of a second layer in the multiple layers. In some non-limiting examples, the metal coating material of a first layer in the multiple layers can include a metal, and the metal coating material of a second layer in the multiple layers can include a metal oxide.

[0419] In some non-limiting examples, the metal coating material of at least one of the plurality of layers may include Yb. In some non-limiting examples, the metal coating material of one of the plurality of layers may include an alloy containing Ag and / or an alloy containing AgMg and / or pure Ag, substantially pure Ag, pure Mg and / or substantially pure Mg. In some non-limiting examples, the metal coating 138 is a double-layer Yb / AgMg coating.

[0420] In some non-limiting examples, the first layer of the multiple layers near the NIC 810 (topmost) may include an element selected from the group consisting of Ag, Au, Cu, Al, Sn, Ni, Ti, Pd, Cr, Fe, Co, Zr, Pt, V, Nb, Ir, Os, Ta, Mo, and / or W. In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Sn, Ti, Pd, Cr, Fe, and / or Co. In some non-limiting examples, the element may include Ni, Zr, Pt, V, Nb, Ir, and / or Os. In some non-limiting examples, the element may include Ta, Mo, and / or W. In some non-limiting examples, the element may include Mg, Ag, and / or Al. In some non-limiting examples, the element may include Mg and / or Ag. In some non-limiting examples, the element may be Ag.

[0421] In some non-limiting examples, the metallic coating 138 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be oxygen (O), sulfur (S), nitrogen (N), and / or carbon (C). Those skilled in the relevant art will appreciate that, in some non-limiting examples, such additional elements may be incorporated into the metallic coating 138 as contaminants due to the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the metallic coating 138. In some non-limiting examples, the concentration of the non-metallic element in the conductive coating material may be less than approximately 1%, approximately 0.1%, approximately 0.001%, approximately 0.0001%, approximately 0.000001%, approximately 0.000001%, and / or approximately 0.0000001%. In some non-limiting examples, the conductive coating 830 has a composition in which the combined amount of O and C is less than about 10%, about 5%, about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%. In some non-limiting examples, the metal coating 138 can include a sealing film 4530. In some non-limiting examples, the metal coating 138 can include a discontinuous coating 1050.

[0422] In some non-limiting examples, the metal coating 138 can be arranged into a pattern that can be defined by at least one region therein that is substantially devoid of the enclosing film 4530 of the metal coating 138 on the first layer surface in the first portion 701. In some non-limiting examples, the at least one region has a metal pattern NIC 810 arranged thereon. In some non-limiting examples, the at least one region can separate the metal coating 138 into a plurality of discrete segments thereof. In some non-limiting examples, at least two of such plurality of discrete segments of the metal coating 138 can be electrically coupled. In some non-limiting examples, at least two of such plurality of discrete segments of the metal coating 138 can each be electrically coupled to a common conductive layer or coating, including but not limited to conductive coating 830, to allow current to flow therebetween. In some non-limiting examples, at least two of such plurality of discrete segments of the metal coating 138 can be electrically insulated from each other.

[0423] In the present disclosure, in some non-limiting examples, as the context indicates, the terms "NIC" and "patterned coating" may be used interchangeably to refer to similar concepts, and in some non-limiting examples, references herein to NIC 810 when selectively deposited to pattern a conductive coating 830 may apply to patterned coating 810 when selectively deposited to pattern an electrode coating.

[0424] Similarly, in some non-limiting examples, as the context indicates, the terms "NPC" and "patterned coating" may be used interchangeably to refer to similar concepts, and in some non-limiting examples, references herein to NPC 1120 when selectively deposited to pattern the conductive coating 830 may apply to patterned coating 1120 when selectively deposited to pattern the electrode coating.

[0425] In some non-limiting examples, reference to a patterned coating 810, 1120 may refer to a coating having a specific composition as described herein.

[0426] One of ordinary skill in the relevant art will appreciate that, in some non-limiting examples, the use of such a selective coating 710 may facilitate and / or allow for the selective deposition of the conductive coating 830 without employing an FMM during the stage of depositing the conductive coating 830 .

[0427] In some non-limiting examples, such selective deposition of the conductive coating 830 can be patterned. In some non-limiting examples, such a pattern can facilitate providing and / or increasing transmittance of at least one of the top and / or bottom portions of the optoelectronic device 100 within the lateral aspect 410 of one or more emissive regions 1910 of the (sub-)pixel 340 / 264x and / or within the lateral aspect 420 of one or more non-emissive regions 1920 that may (in some non-limiting examples) surround such emissive regions 1910.

[0428] In some non-limiting examples, the conductive coating 830 can be deposited on a conductive structure and / or in some non-limiting examples, form a layer thereof for an optoelectronic device 100, wherein the conductive structure can be a first electrode 120 and / or a second electrode 140 in some non-limiting examples to act as an anode 341 and / or a cathode 342 and / or an auxiliary electrode 1750 and / or a bus bar 4150 to support its electrical conductivity and / or, in some non-limiting examples, to be electrically coupled thereto.

[0429] In some non-limiting examples, the NIC 810 of a given conductive coating 830 (including but not limited to Mg) may refer to a coating having a surface that exhibits a relatively low initial adhesion probability S0 for the vapor-form conductive coating 830 (Mg in this example), thereby inhibiting deposition of the conductive coating 830 (Mg in this example) on the exposed layer surface 111. Thus, in some non-limiting examples, the selective deposition of the NIC 810 may reduce the initial adhesion probability S0 of the exposed layer surface 111 (of the NIC 810) presented for deposition of the conductive coating 830 thereon.

[0430] In some non-limiting examples, NPC 1120 of a given conductive coating 830 (including but not limited to Mg) may refer to a coating having an exposed layer surface 111 that exhibits a relatively high initial adhesion probability S0 for the conductive coating 830 in vapor form, such that deposition of the conductive coating 830 on the exposed layer surface 111 is facilitated. Thus, in some non-limiting examples, selective deposition of NPC 1120 may increase the initial adhesion probability S0 of the exposed layer surface 111 (of NPC 1120) presented for deposition of the conductive coating 830 thereon.

[0431] When the selective coating 710 is a NIC 810, the first portion 701 of the exposed layer surface 111 of the underlying material on which the NIC 810 is deposited will thereafter present a treated surface (of the NIC 810) whose nucleation inhibiting properties have been increased or, alternatively, whose nucleation promoting properties have been decreased (in either case, the surface of the NIC 810 deposited on the first portion 701), such that the treated surface has a reduced affinity for deposition thereon of the conductive coating 830 relative to the affinity of the exposed layer surface 111 of the underlying material on which the NIC 810 has been deposited. In contrast, the second portion 702 on which no such NIC 810 is deposited will continue to present an exposed layer surface 111 (of the underlying substrate 110) whose nucleation inhibiting properties or, alternatively, whose nucleation promoting properties have been substantially unchanged (in either case, the exposed surface 111 of the underlying substrate 110 substantially devoid of the selective coating 710) for deposition thereon of the conductive coating 830.

[0432] When the selective coating 710 is an NPC 1120, the first portion 701 of the exposed layer surface 111 of the underlying material having the NPC 1120 deposited thereon will thereafter present a treated surface (of the NPC 1120) whose nucleation inhibiting properties have been reduced or, alternatively, whose nucleation promoting properties have been increased (in either case, the surface of the NPC 1120 deposited on the first portion 701), such that the treated surface has an increased affinity for depositing the conductive coating 830 thereon relative to the affinity of the exposed layer surface 111 of the underlying material having deposited the NPC 1120. In contrast, the second portion 702, on which no such NPC 1120 is deposited, will continue to present an exposed layer surface 111 (of the underlying substrate 110) whose nucleation inhibiting properties or, alternatively, nucleation promoting properties (in either case, the exposed surface 111 of the underlying substrate 110 substantially devoid of NPC 1120) have not been substantially altered for depositing the conductive coating 830 thereon.

[0433] In some non-limiting examples, both the NIC 810 and the NPC 1120 can be selectively deposited on the respective first portion 701 and NPC portion 1103 of the exposed layer surface 111 of the underlying material ( Figure 11A ) to respectively alter the nucleation inhibiting properties (and / or conversely, the nucleation promoting properties) of the exposed layer surface 111 to be presented for deposition of the conductive coating 830 thereon. In some non-limiting examples, there may be a second portion 702 of the exposed layer surface 111 of the underlying material on which the selective coating 710 is not deposited, such that the nucleation inhibiting properties (and / or conversely, the nucleation promoting properties) to be presented for deposition of the conductive coating 830 thereon are substantially unchanged.

[0434] In some non-limiting examples, first portion 701 and NPC portion 1103 can overlap, such that a first coating of NIC 810 and / or NPC 1120 can be selectively deposited on exposed layer surfaces 111 of the underlying material in such overlapping regions, and a second coating of NIC 810 and / or NPC 1120 can be selectively deposited on the treated exposed layer surfaces 111 of the first coating. In some non-limiting examples, the first coating is NIC 810. In some non-limiting examples, the first coating is NPC 1120.

[0435] In some non-limiting examples, the first portion 701 (and / or the NPC portion 1103) into which the selective coating 710 has been deposited may include a removed area where the deposited selective coating 710 has been removed to present an uncovered surface of the underlying material for depositing the conductive coating 830 thereon, such that the nucleation inhibiting properties (and / or conversely, the nucleation promoting properties) of the conductive coating 830 to be deposited thereon are substantially unchanged.

[0436] In some non-limiting examples, the underlying material can be selected from at least one layer of the substrate 110 and / or at least one layer of the front panel 10, including but not limited to the first electrode 120, the second electrode 140, at least one semiconducting layer 130 (and / or at least one of its layers) and / or any combination of any of these.

[0437] In some non-limiting examples, the conductive coating 830 can have specific material properties. In some non-limiting examples, the conductive coating 830 can include Mg, either alone or in the form of a compound and / or alloy.

[0438] As a non-limiting example, pure and / or substantially pure Mg may not readily deposit onto some organic surfaces due to the low adhesion probability S of Mg on some organic surfaces.

[0439] Deposition of selective coatings

[0440] In some non-limiting examples, the thin film comprising the selective coating 710 may be selectively deposited and / or processed using a variety of techniques including, but not limited to, evaporation (including, but not limited to, thermal evaporation and / or e-beam evaporation), photolithography, printing (including, but not limited to, inkjet and / or vapor jet printing, roll-to-roll printing, and / or micro-contact transfer printing), PVD (including, but not limited to, sputtering), CVD (including, but not limited to, PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including, but not limited to, spin coating, dip coating, line coating, and / or spray coating), and / or a combination of any two or more thereof.

[0441] Figure 7 is an example schematic diagram illustrating a non-limiting example of an evaporation process, shown generally at 700, for selectively depositing a selective coating 710 onto a first portion 701 of an exposed layer surface 111 of an underlying material (in the figure, for simplicity of illustration only, substrate 110) in a chamber 70.

[0442] In process 700, a quantity of selective coating material 711 is heated under vacuum to evaporate and / or sublime 712 the selective coating material 711. In some non-limiting examples, the selective coating material 711 comprises entirely and / or substantially the material used to form the selective coating 710. The evaporated selective coating material 712 is directed through chamber 70, including in the direction indicated by arrow 71, toward the exposed layer surface 111. When the evaporated selective coating material 712 is incident on the exposed layer surface 111, i.e., in the first portion 701, the selective coating 710 is formed thereon.

[0443] In some non-limiting examples, as shown in the diagram of process 700, the selective coating 710 can be selectively deposited only onto a portion of the exposed layer surface 111 (in the illustrated example, the first portion 701) by inserting a shadow mask 715, which in some non-limiting examples can be a FMM, between the selective coating material 711 and the exposed layer surface 111. The shadow mask 715 has at least one aperture 716 extending therethrough, allowing a portion of the evaporated selective coating material 712 to pass through the aperture 716 and impinge on the exposed layer surface 111 to form the selective coating 710. In the event that the evaporated selective coating material 712 does not pass through the aperture 716 and impinges on the surface 717 of the shadow mask 715, it is prevented from being deposited on the exposed layer surface 111 to form the selective coating 710 within the second portion 702. The second portion 702 of the exposed layer surface 111 is thus substantially devoid of the selective coating 710. In some non-limiting examples (not shown), selective coating material 711 incident on shadow mask 715 may be deposited on surface 717 thereof.

[0444] Thus, a patterned surface is produced upon completion of deposition of the selective coating 710 .

[0445] In some non-limiting examples, for simplicity of illustration, Figure 7 The selective coating 710 employed in the embodiment may be NIC 810. In some non-limiting examples, for simplicity of illustration, Figure 7 The selective coating 710 employed in the embodiment may be the NPC 1120 .

[0446] Figure 8 is an exemplary schematic diagram illustrating a non-limiting example of the results of an evaporation process, generally shown at 800, for selectively depositing a conductive coating 830 onto a second portion 702 of an exposed layer surface 111 of an underlying material (in the figure, for simplicity of illustration only, substrate 110), the second portion being substantially devoid of NIC 810 selectively deposited onto the first portion 701, in a chamber 70, including but not limited to by Figure 7The evaporation process 700. In some non-limiting examples, the second portion 702 includes the portion of the exposed layer surface 111 that is located outside the first portion 701.

[0447] Once NIC 810 has been deposited on a first portion 701 of an exposed layer surface 111 of an underlying material (in the figure, substrate 110 ), a conductive coating 830 may be deposited on a second portion 702 of the exposed layer surface 111 that is substantially devoid of NIC 810 .

[0448] In process 800, a quantity of conductive coating material 831 is heated under vacuum to evaporate and / or sublime 832 the conductive coating material 831. In some non-limiting examples, the conductive coating material 831 comprises entirely and / or substantially the material used to form the conductive coating 830. The evaporated conductive coating material 832 is directed into chamber 70, including in the direction indicated by arrow 81, toward the exposed layer surface 111 of the first portion 701 and the second portion 702. When the evaporated conductive coating material 832 is incident on the second portion 702 of the exposed layer surface 111, the conductive coating 830 is formed thereon.

[0449] In some non-limiting examples, deposition of the conductive coating material 831 can be performed using an open mask and / or maskless deposition process such that the conductive coating 830 is formed substantially across the entire exposed layer surface 111 of the underlying material (in the figure, substrate 110) to produce a treated surface (of the conductive coating 830).

[0450] Those skilled in the relevant art will appreciate that, in contrast to the feature size of an FMM, the feature size of an open mask is typically comparable to the size of the optoelectronic device 100 being fabricated. In some non-limiting examples, such an open mask can have an aperture that generally corresponds to the size of the optoelectronic device 100, which in some non-limiting examples can correspond to, but is not limited to, approximately 1 inch for a microdisplay, approximately 4-6 inches for a mobile display, and / or approximately 8-17 inches for a laptop and / or flat-panel display, so as to mask the edges of such optoelectronic device 100 during fabrication. In some non-limiting examples, the feature size of the open mask can be on the order of approximately 1 cm and / or larger. In some non-limiting examples, the size of the aperture formed in the open mask can be configured to encompass the lateral dimensions 410 of a plurality of emissive regions 1910, each corresponding to a (sub-)pixel 340 / 264x and / or the lateral dimensions 420 of the surrounding and / or surrounding and / or intermediate non-emissive regions 1920.

[0451] It will be understood by those skilled in the relevant art that, in some non-limiting examples, the use of an open mask may be omitted if desired. In some non-limiting examples, the open mask deposition process described herein may alternatively be performed without the use of an open mask, such that the entire exposed layer surface 111 may be exposed.

[0452] In some non-limiting examples, as shown in the diagram of process 800, the deposition of the conductive coating 830 can be performed using an open mask and / or maskless deposition process such that the conductive coating 830 is formed across substantially the entire exposed layer surface 111 of the underlying material (in the diagram, substrate 110) to produce a treated surface (of the conductive coating 830).

[0453] In fact, if Figure 8 As shown, the evaporated conductive coating material 832 is incident upon the exposed layer surface 111 of the NIC 810 across the first portion 701 and upon the exposed layer surface 111 of the substrate 110 across the second portion 702 that is substantially devoid of the NIC 810 .

[0454] Since the exposed layer surface 111 of the NIC 810 in the first portion 701 exhibits a relatively lower initial adhesion probability S0 for the conductive coating 830 than the exposed layer surface 111 of the substrate 110 in the second portion 702, the conductive coating 830 is selectively deposited substantially only on the exposed layer surface 111 of the substrate 110 in the second portion 702 that is substantially devoid of the NIC 810. In contrast, the evaporated conductive coating material 832 incident on the exposed layer surface 111 of the NIC 810 across the first portion 701 tends not to be deposited, as shown in the figure (833), and the exposed layer surface 111 of the NIC 810 across the first portion 701 is substantially devoid of the conductive coating 830. Although not in Figure 8 , but in some non-limiting examples, the exposed layer surface 111 of the NIC 810 across the first portion 701 is substantially devoid of material of the conductive coating 830, but is not equivalent to a coating film of the conductive coating 830. Rather, as discussed in detail below, the exposed layer surface 111 of the NIC 810 may have a discontinuous coating and / or an intermediate conductive film of material of the conductive coating 830 deposited thereon.

[0455] In some non-limiting examples, the initial deposition rate of the evaporated conductive coating material 832 on the exposed layer surface 111 of the substrate 110 in the second portion 702 may be at least and / or greater than about 200 times, at least and / or greater than about 550 times, at least and / or greater than about 900 times, at least and / or greater than about 1,000 times, at least and / or greater than about 1,500 times, at least and / or greater than about 1,900 times, and / or at least and / or greater than about 2,000 times the initial deposition rate of the evaporated conductive coating material 832 on the exposed layer surface 111 of the NIC 810 in the first portion 701.

[0456] Without employing FMM within the conductive coating 830 deposition process, the aforementioned can be combined to achieve selective deposition of at least one conductive coating 830 to form device features, including but not limited to patterned electrodes (including but not limited to: first electrode 120, second electrode 140, auxiliary electrode 1750, bus bar 4150) and / or conductive elements electrically coupled thereto. In some non-limiting examples, such patterning can allow and / or enhance the transmittance of the optoelectronic device 100.

[0457] In some non-limiting examples, the selective coating 710 (which may be the NIC 810 and / or the NPC 1120) may be applied multiple times during the manufacturing process of the optoelectronic device 100 in order to pattern a plurality of electrodes (including but not limited to: the first electrode 120, the second electrode 140, the auxiliary electrode 1750, the bus bar 4150) and / or their respective layers and / or the device including the conductive coating 830 electrically coupled thereto.

[0458] Figures 9A-9D A non-limiting example of an open mask is shown.

[0459] Figure 9A A non-limiting example of an open mask 900 having and / or defining an aperture 910 formed therein is shown. In some non-limiting examples, as shown, the aperture 910 of the open mask 900 is smaller than the size of the optoelectronic device 100, such that when the mask 900 is overlaid on the optoelectronic device 100, the mask 900 covers the edge of the optoelectronic device 100. In some non-limiting examples, as shown, lateral aspects 410 of the emission region 1910 corresponding to all and / or substantially all (sub-)pixels 340 / 264x of the optoelectronic device 100 are exposed through the aperture 910, while an unexposed region 920 is formed between the outer edge 91 of the optoelectronic device 100 and the aperture 910. It will be understood by those skilled in the relevant art that, in some non-limiting examples, electrical contacts and / or other components (not shown) of the optoelectronic device 100 can be positioned in such unexposed region 920 such that these components are substantially unaffected throughout the open mask deposition process.

[0460] Figure 9B exhibiting and / or defining a structure formed therein less than Figure 9A 910 and the apertures 911, such that when the mask 901 is overlying the optoelectronic device 100, the mask 901 covers at least the lateral aspects 410a of the emission regions 1910 corresponding to at least some of the (sub-)pixels 340 / 264x. As shown, in some non-limiting examples, the lateral aspects 410a of the emission regions 1910 corresponding to the outermost (sub-)pixels 340 / 264x are positioned within an unexposed region 913 of the optoelectronic device 100 formed between the outer edge 91 of the optoelectronic device 100 and the apertures 911, which is masked during the open mask deposition process to inhibit the evaporated conductive coating material 832 from being incident on the unexposed region 913.

[0461] Figure 9C A non-limiting example of an open mask 902 having and / or defining apertures 912 formed therein is shown, which define a pattern that covers lateral aspects 410a of the emission regions 1910 corresponding to at least some of the (sub-)pixels 340 / 264x while exposing lateral aspects 410b of the emission regions 1910 corresponding to at least some of the (sub-)pixels 340 / 264x. As shown, in some non-limiting examples, the lateral aspects 410a of the emission regions 1910 corresponding to at least some of the (sub-)pixels 340 / 264x positioned within unexposed regions 914 of the optoelectronic device 100 are masked during the open mask deposition process to inhibit the evaporated conductive coating material 832 from being incident on the unexposed regions 914.

[0462] Despite Figures 9B-9C , the lateral aspects 410a of the emission regions 1910 corresponding to at least some of the outermost (sub) pixels 340 / 264x have been masked, as shown, and it should be understood by a person skilled in the relevant art that in some non-limiting examples, the holes of the open masks 900-902 can be shaped to mask the lateral aspects 410 of other emission regions 1910 and / or the lateral aspects 420 of the non-emissive regions 1920 of the optoelectronic device 100.

[0463] In addition, despite Figures 9A-9C An open mask 900-902 having a single aperture 910-912 is shown, and a person skilled in the relevant art will understand that in some non-limiting examples (not shown), such an open mask 900-902 may have additional apertures (not shown) for exposing multiple areas of the exposed layer surface 111 of the underlying material of the optoelectronic device 100.

[0464] Figure 9DA non-limiting example of an open mask 903 having and / or defining a plurality of apertures 917a-917d is shown. In some non-limiting examples, the apertures 917a-917d are positioned such that the apertures can selectively expose certain regions 921 of the optoelectronic device 100 while masking other regions 922. In some non-limiting examples, the lateral aspects 410b of certain emissive regions 1910 corresponding to at least some (sub-)pixels 340 / 264x are exposed through the apertures 917a-917d in the regions 921, while the lateral aspects 410a of other emissive regions 1910 corresponding to at least some (sub-)pixels 340 / 264x are located within the regions 922 and are therefore masked.

[0465] Now go to Figure 10A , showing Figure 1 An example version 1000 of the optoelectronic device 100 is shown, but with a number of additional deposition steps as described herein.

[0466] Device 1000 shows a lateral aspect of an exposed layer surface 111 of an underlying material. The lateral aspect includes a first portion 1001 and a second portion 1002. In first portion 1001, NICs 810 are disposed on exposed layer surface 111. However, in second portion 1002, exposed layer surface 111 is substantially devoid of NICs 810.

[0467] In some non-limiting examples, the first portion 1001 and the second portion 1002 are substantially adjacent to each other in a lateral direction.

[0468] In some non-limiting examples, the exposed layer surface 1001 of the first portion 1001 and the exposed layer surface 111 of the second portion 1002 are substantially close to each other in cross-section. That is, although one or more intermediate layers may exist between the exposed layer surface 111 of the first portion 1001 and the exposed layer surface 111 of the second portion 1002, in some non-limiting examples, the difference therebetween is a fraction of the lateral extent of at least one of the first portion 1001 and the second portion 1002.

[0469] After selectively depositing NIC 810 across first portion 1001 , in some non-limiting examples, a conductive coating 830 is deposited on device 1000 using an open mask and / or maskless deposition process.

[0470] NIC 810 provides a surface with a relatively low initial adhesion probability S0 for conductive coating 830 within first portion 1001, and the initial adhesion probability S0 for conductive coating 830 is substantially less than the initial adhesion probability S0 of the exposed layer surface 111 of the underlying material of device 1000 within second portion 1002.

[0471] Thus, the conductive coating 830 is formed as a closed film in the second portion 1002 , while the first portion 1001 is substantially devoid of the conductive coating 830 .

[0472] In this manner, the NIC 810 may be selectively deposited, including using a shadow mask, to allow deposition of the conductive coating 830, including but not limited to using an open mask and / or maskless deposition process, to form device features, including but not limited to at least one of the following: the first electrode 120, the second electrode 140, the auxiliary electrode 1750, the bus bar 4150, and / or at least one layer thereof and / or conductive elements electrically coupled thereto.

[0473] Now go to Figure 10B , an instance 1010 of an example version of apparatus 1000 is shown.

[0474] and Figure 10A In contrast to the device 1000, the device 1010 is shown wherein the first portion 1001 is shown to be substantially devoid of the conductive coating 830, the first portion 1001 being substantially devoid of the closure film 4530 of the conductive coating 830. Figure 10B In the embodiment of the present invention, due to the presence of NIC 810 in first portion 1001, conductive coating material 831 is deposited as a discontinuous coating 1050 on exposed layer surface 1011 of NIC 810 in first portion 1001. In some non-limiting examples, discontinuous coating 1050 includes a plurality of discrete islands. In some non-limiting examples, at least some of the islands are disconnected from each other. In other words, in some non-limiting examples, discontinuous coating 1050 may include features that are physically separated from each other, such that discontinuous coating 1050 does not form a continuous layer.

[0475] In this manner, the NIC 810 may be selectively deposited, including using a shadow mask, to allow deposition of the conductive coating 830, including but not limited to using an open mask and / or maskless deposition process, to form device features, including but not limited to at least one of the following: the first electrode 120, the second electrode 140, the auxiliary electrode 1750, the bus bar 4150, and / or at least one layer thereof and / or conductive elements electrically coupled thereto.

[0476] Without wishing to be bound by any particular theory, it can be hypothesized that during deposition of the conductive coating 830, some vapor monomers of the conductive coating material 831 that impinge on the exposed layer surface 1011 of the NIC 810 may condense to form small clusters and / or islands thereon. However, due to one or more properties and / or characteristics of the NIC 810, the substantial growth of such clusters and / or islands is inhibited, which, if unhindered, could result in the formation of a closed film 4530 of the conductive coating material 831 on the exposed layer surface 1011 of the NIC 810. Thus, in some non-limiting examples, the discontinuous coating 1050 includes the conductive coating material 831 used to form the conductive coating 830. In some non-limiting examples, the peak absorption wavelength of the discontinuous coating 1050 may be less than the peak wavelength of photons emitted and / or transmitted by the device 1020. As non-limiting examples, the discontinuous coating 1050 can exhibit peak absorption at wavelengths less than about 470 nm, less than about 460 nm, less than about 455 nm, less than about 450 nm, less than about 445 nm, less than about 440 nm, less than about 430 nm, less than about 420 nm, and / or less than about 400 nm.

[0477] In some non-limiting examples, the discontinuous coating 1050 containing clusters and / or islands can be arranged to be located on the NIC 810 and / or in physical contact with and / or in proximity to the NIC.

[0478] Figure 10C is based on Figure 10B 1 is a simplified example plan view of a first portion 1001 of a non-limiting example apparatus 1010 .

[0479] Now go to Figure 10D , showing Figure 10B , an example version 1020 of a simplified version of the device 1020 is shown in which a third portion 1003 is shown disposed between the first portion 1001 and the second portion 1002 in a lateral aspect of the device 1020. Although not shown as such, in some non-limiting examples, the third portion 1003 can be considered to be a portion of the first portion 1001, thereby representing an end thereof and / or an interface with the second portion 1002. In some non-limiting examples, the third portion 1003 includes a conductive coating 830 covering at least a portion of an exposed layer surface 1011 of an underlying material, which in some non-limiting examples can include the NIC 810 in the third portion 1003 as well as the first portion 1001. In some non-limiting examples, the thickness of the conductive coating 830 in the third portion 1003 can be less than the thickness of the conductive coating 830 in the second portion 1002. Although in Figure 10CAlthough not specifically shown, the thickness of the NIC 810 in the third portion 1003 may be smaller than the thickness of the NIC 810 in the first portion 1001 .

[0480] In some non-limiting examples, the conductive coating 830 in the third portion 1003 includes at least one protrusion and / or at least one recess in a lateral aspect of the device 1020. In some non-limiting examples, the conductive coating 830 in the third portion 1003 can include an intermediate stage coating that, in some non-limiting examples, has a plurality of pores, including but not limited to pinholes, tears, and / or cracks.

[0481] Figure 10E A simplified example plan view of a portion of device 1020 is shown, illustrating third portion 1003 disposed between first portion 1001 and a portion of second portion 1002. In some non-limiting examples, conductive coating 830 in third portion 1003, and in some non-limiting examples, conductive coating 830 intruding into first portion 1001, can include at least one dendrite 1021, which, in some non-limiting examples, can extend laterally and / or at least partially intrude into an adjacent first portion 1001. At least one dendrite 1021 covers an exposed layer surface 1011 of an underlying material, which, in some non-limiting examples, can be NIC 810. In some non-limiting examples, at least a portion of the exposed layer surface 1011 of the underlying material (which in some non-limiting examples may be the NIC 810) may not be covered by the conductive coating 830 in the third portion 1003 and, in some non-limiting examples, may extend into the second portion 1002 and may include at least one dendritic recess 1022, which in some non-limiting examples may extend laterally into and / or at least partially into the adjacent second portion 1002.

[0482] Without wishing to be bound by any particular theory, it can be hypothesized that at least one protrusion, including but not limited to at least one dendritic protrusion 1021, and / or at least one recess, including but not limited to at least one dendritic recess 1022, can form at and / or near NIC 810 and / or due to at least one localized inhomogeneity in at least one property and / or feature of the NIC. As a non-limiting example, at least one localized region of NIC 810 can exhibit variations in the critical surface tension, physical discontinuities, and / or domain boundaries of its thin film coating. In some non-limiting examples, such variations can form between adjacent crystallites and can result in selective deposition of conductive coating material 831, thereby creating at least one protrusion and / or at least one recess. In some non-limiting examples, at least one dendritic protrusion 1021 can comprise at least one feature formed by merging at least one island and / or cluster of discontinuous coating 1050 with at least one other island and / or cluster of discontinuous coating 1050 and / or with conductive coating 830.

[0483] In some non-limiting examples, third portion 1003 may include at least one area substantially devoid of conductive coating material 831, including but not limited to gaps in discontinuous coating 1050, gaps between at least one feature of at least one dendrite-shaped protrusion 1021, and / or at least one feature of at least one dendrite-shaped recess 1022. In some non-limiting examples, the surface coverage of conductive coating material 831 in third portion 1003 may be between about 30% and about 90% and / or about 40% and about 80%, in some non-limiting examples.

[0484] Thus, first portion 1001 is substantially devoid of conductive coating 830 .

[0485] In this manner, the NIC 810 may be selectively deposited, including using a shadow mask, to allow deposition of the conductive coating 830, including but not limited to using an open mask and / or maskless deposition process, to form device features, including but not limited to at least one of the following: the first electrode 120, the second electrode 140, the auxiliary electrode 1750, the bus bar 4150, and / or at least one layer thereof and / or conductive elements electrically coupled thereto.

[0486] Figures 11A-11BA non-limiting example of an evaporation process, generally shown at 1100, is shown in chamber 70 for selectively depositing a conductive coating 830 onto a second portion 702 of an exposed layer surface 111 of an underlying material (in the figure, for simplicity of illustration only, substrate 110), the second portion being substantially devoid of NIC 810 selectively deposited onto the first portion 701 and onto the NPC portion 1103 of the first portion 701 where NIC 810 is deposited, including but not limited to by Figure 7 Evaporation process 700.

[0487] Figure 11A Stage 1101 of process 1100 is depicted, wherein once NIC 810 has been deposited on first portion 701 of exposed layer surface 111 of underlying material (in the figure, substrate 110), NPC 1120 may be deposited on NPC portion 1103 of exposed layer surface 111 of NIC 810 disposed on substrate 110 in first portion 701. In the figure, NPC portion 1103 extends entirely within first portion 701, as a non-limiting example.

[0488] In stage 1101, a quantity of NPC material 1121 is heated under vacuum to evaporate and / or sublime 1122 NPC material 1121. In some non-limiting examples, NPC material 1121 comprises entirely and / or substantially material for forming NPC 1120. Evaporated NPC material 1122 is directed through chamber 70, including in a direction indicated by arrow 1110, toward first portion 701 and exposed layer surface 111 of NPC portion 1103. When evaporated NPC material 1122 is incident on NPC portion 1103 at exposed layer surface 111, NPC 1120 is formed thereon.

[0489] In some non-limiting examples, deposition of the NPC material 1121 can be performed using open mask and / or maskless deposition techniques such that the NPC 1120 is formed across substantially the entire exposed layer surface 111 of the underlying material (in the figures, which can be the NIC 810 extending through the first portion 701 and / or the substrate 110 extending through the second portion 702) to produce a treated surface (of the NPC 1120).

[0490] In some non-limiting examples, as shown in the diagram at stage 1101, NPC 1120 can be selectively deposited only onto a portion (in the illustrated example, NPC portion 1103) of exposed layer surface 111 (in the diagram, of NIC 810) by inserting a shadow mask 1125, which in some non-limiting examples can be an FMM, between NPC material 1121 and exposed layer surface 111. Shadow mask 1125 has at least one aperture 1126 extending therethrough, such that a portion of evaporated NPC material 1122 passes through aperture 1126 and is incident on exposed layer surface 111 (in the diagram, as a non-limiting example, only within NPC portion 1103 of NIC 810) to form NPC 1120. Where evaporated NPC material 1122 does not pass through aperture 1126 but is incident on surface 1127 of shadow mask 1125, it is prevented from being deposited on exposed layer surface 111 to form NPC 1120. Portions 1102 of exposed layer surface 111 outside of NPC portion 1103 are therefore substantially devoid of NPC 1120. In some non-limiting examples (not shown), evaporated NPC material 1122 incident on shadow mask 1125 may be deposited on surface 1127 thereof.

[0491] Although the exposed layer surface 111 of the NIC 810 in the first portion 701 exhibits a relatively low initial adhesion probability S0 for the conductive coating 830, in some non-limiting examples, this may not necessarily be the case for the NPC coating 1120, such that the NPC coating 1120 is still selectively deposited on the exposed layer surface (in the figure, of the NIC 810) in the NPC portion 1103.

[0492] Thus, a patterned surface is produced upon completion of deposition of the NPC 1120 .

[0493] Figure 11B Stage 1104 of process 1100 is described, wherein, once NIC 810 has been deposited on first portion 701 of exposed layer surface 111 of underlying material (in the figure, substrate 110) and NPC 1120 has been deposited on NPC portion 1103 of exposed layer surface 111 (in the figure, of NIC 810), conductive coating 830 can be deposited on NPC portion 1103 and second portion 702 of exposed layer surface 111 (in the figure, substrate 110).

[0494] In stage 1104, a quantity of conductive coating material 831 is heated under vacuum to evaporate and / or sublime 832 the conductive coating material 831. In some non-limiting examples, the conductive coating material 831 comprises entirely and / or substantially the material for forming the conductive coating 830. The evaporated conductive coating material 832 is directed through the chamber 70, including in a direction indicated by arrow 1130, toward the exposed layer surface 111 of the first portion 701, the NPC portion 1103, and the second portion 702. When the evaporated conductive coating material 832 is incident on the NPC portion 1103 of the exposed layer surface 111 (of the NPC 1120) and the second portion 702 of the exposed layer surface 111 (of the substrate 110) (i.e., in addition to the exposed layer surface 111 of the NIC 810), the conductive coating 830 is formed thereon.

[0495] In some non-limiting examples, as shown in the figure of stage 1104, the deposition of the conductive coating 830 can be performed using an open mask and / or maskless deposition process such that the conductive coating 830 is formed across substantially the entire exposed layer surface 111 of the underlying material (except where the underlying material is NIC 810) to produce a treated surface (of the conductive coating 830).

[0496] In fact, if Figure 11B As shown, the evaporated conductive coating material 832 is incident on the exposed layer surface 111 of the NIC 810 across the first portion 701 located outside the NPC portion 1103, as well as the exposed layer surface 111 of the NPC 1120 across the NPC portion 1103 and the exposed layer surface 111 of the substrate 110 across the second portion 702 that is substantially devoid of the NIC 810.

[0497] Because the exposed layer surface 111 of the NIC 810 in the first portion 701 located outside the NPC portion 1103 exhibits a relatively lower initial adhesion probability S0 to the conductive coating 830 compared to the exposed layer surface 111 of the substrate 110 in the second portion 702 and / or because the exposed layer surface 111 of the NPC 1120 in the NPC portion 1103 exhibits a relatively higher initial adhesion probability S0 to the conductive coating 830 compared to both the exposed layer surface 111 of the NIC 810 in the first portion 701 located outside the NPC portion 1103 and the exposed layer surface 111 of the substrate 110 in the second portion 702, the conductive coating 830 is essentially selectively deposited only on the exposed layer surface 111 of the substrate 110 in the NPC portion 1103 and the second portion 702, and these two portions essentially lack NIC 810. In contrast, the evaporated conductive coating material 832 incident on the exposed layer surface 111 of the NIC 810 across the first portion 701 located outside the NPC portion 1103 tends not to deposit, as shown (1123) and the exposed layer surface 111 of the NIC 810 across the first portion 701 located outside the NPC portion 1103 is substantially devoid of conductive coating 830.

[0498] Thus, a patterned surface is produced upon completion of deposition of the conductive coating 830 .

[0499] Figures 12A-12C A non-limiting example of an evaporation process, shown generally at 1200, is illustrated in chamber 70 for selectively depositing a conductive coating 830 onto a second portion 1102 of an exposed layer surface 111 of an underlying material.

[0500] Figure 12A Stage 1201 of process 1200 is depicted in which a quantity of NPC material 1121 is heated under vacuum to evaporate and / or sublime 1122 NPC material 1121. In some non-limiting examples, NPC material 1121 comprises entirely and / or substantially the material used to form NPC 1120. Evaporated NPC material 1122 is directed through chamber 70, including in a direction indicated by arrow 1210, toward exposed layer surface 111 (in the figure, substrate 110).

[0501] In some non-limiting examples, deposition of the NPC material 1121 can be performed using an open mask and / or maskless deposition process such that the NPC 1120 is formed across substantially the entire exposed layer surface 111 of the underlying material (in the figure, substrate 110) to produce a treated surface (of the NPC 1120).

[0502] In some non-limiting examples, as shown in the diagram at stage 1201, NPC 1120 can be selectively deposited only onto a portion of exposed layer surface 111 (in the illustrated example, NPC portion 1103) by inserting a shadow mask 1125, which in some non-limiting examples can be an FMM, between NPC material 1121 and exposed layer surface 111. Shadow mask 1125 has at least one aperture 1126 extending therethrough, such that a portion of evaporated NPC material 1122 passes through aperture 1126 and is incident on exposed layer surface 111, forming NPC 1120 in NPC portion 1103. Where evaporated NPC material 1122 does not pass through aperture 1126 and is incident on surface 1127 of shadow mask 1125, it is prevented from being deposited on exposed layer surface 111, forming NPC 1120 in portion 1102 of exposed layer surface 111 outside of NPC portion 1103. Portion 1102 is thus substantially devoid of NPC 1120. In some non-limiting examples (not shown), NPC material 1121 incident upon shadow mask 1125 may be deposited on surface 1127 thereof.

[0503] When the evaporated NPC material 1122 is incident on the exposed layer surface 111 , ie, in the NPC portion 1103 , the NPC 1120 is formed thereon.

[0504] Thus, a patterned surface is produced upon completion of deposition of the NPC 1120 .

[0505] Figure 12B Stage 1202 of process 1200 is depicted, wherein once NPC 1120 has been deposited on NPC portion 1103 of exposed layer surface 111 of an underlying material (in the figure, substrate 110), NIC 810 may be deposited on first portion 701 of exposed layer surface 111. In the figure, as a non-limiting example, first portion 701 extends entirely within NPC portion 1103. Thus, in the figure, as a non-limiting example, portion 1102 includes that portion of exposed layer surface 111 that is outside of first portion 701.

[0506] In stage 1202, a quantity of NIC material 1211 is heated under vacuum to evaporate and / or sublime 1212 NIC material 1211. In some non-limiting examples, NIC material 1211 comprises entirely and / or substantially the material used to form NIC 810. Evaporated NIC material 1212 is directed through chamber 70, including in a direction indicated by arrow 1220, toward first portion 701, NPC portion 1103 extending beyond first portion 701, and exposed layer surface 111 of portion 1102. When evaporated NIC material 1212 is incident on first portion 701 of exposed layer surface 111, NIC 810 is formed thereon.

[0507] In some non-limiting examples, deposition of the NIC material 1211 can be performed using an open mask and / or maskless deposition process such that the NIC 810 is formed across substantially the entire exposed layer surface 111 of the underlying material to produce a treated surface (of the NIC 810).

[0508] In some non-limiting examples, as shown in the diagram at stage 1202, NIC 810 can be selectively deposited only onto a portion (in the illustrated example, first portion 701) of exposed layer surface 111 (in the diagram, of NPC 1120) by inserting a shadow mask 1215, which in some non-limiting examples can be an FMM, between the NIC material 1211 and exposed layer surface 111. Shadow mask 1215 has at least one aperture 1216 extending therethrough, such that a portion of evaporated NIC material 1212 passes through aperture 1216 and impinges on exposed layer surface 111 (in the diagram, as a non-limiting example, of NPC 1120) to form NIC 810. In the event that evaporated NIC material 1212 does not pass through aperture 1216 but instead impinges on surface 1217 of shadow mask 1215, it is prevented from being deposited on exposed layer surface 111, thereby forming NIC 810 within second portion 702 outside of first portion 701. Second portion 702 of exposed layer surface 111, outside of first portion 701, is therefore substantially devoid of NIC 810. In some non-limiting examples (not shown), evaporated NIC material 1212 incident on shadow mask 1215 may be deposited on surface 1217 thereof.

[0509] Although the exposed layer surface 111 of the NPC 1120 in the NPC portion 1103 exhibits a relatively high initial adhesion probability S0 for the conductive coating 830, in some non-limiting examples, this may not necessarily be the case for the NIC coating 810. Even so, in some non-limiting examples, this affinity for the NIC coating 810 can allow the NIC coating 810 to still be selectively deposited on the exposed layer surface 111 (in the figure, of the NPC 1120) in the first portion 701.

[0510] Thus, a patterned surface is produced upon completion of deposition of NIC 810 .

[0511] Figure 12C Stage 1204 of process 1200 is described, wherein once NIC 810 has been deposited on a first portion 701 of the exposed layer surface 111 of the underlying material (in the figure, NPC 1120), a conductive coating 830 can be deposited on a second portion 702 of the exposed layer surface 111 (in the figure, NPC 1120 of the substrate 110 across portion 1102 outside of NPC portion 1103 and across NPC portion 1103 of the first portion 701).

[0512] In stage 1204, a quantity of conductive coating material 831 is heated under vacuum to evaporate and / or sublime 832 the conductive coating material 831. In some non-limiting examples, the conductive coating material 831 comprises entirely and / or substantially the material for forming the conductive coating 830. The evaporated conductive coating material 832 is directed through chamber 70, including in the direction indicated by arrow 1230, toward first portion 701, NPC portion 1103, and exposed layer surface 111 of portion 1102 outside of NPC portion 1103. When the evaporated conductive coating material 832 is incident on exposed layer surface 111 (of NPC 1120) outside of first portion 701 and exposed layer surface 111 (of substrate 110) outside of NPC portion 1103, conductive coating 830 is formed thereon, i.e., on second portion 702 in addition to exposed layer surface 111 of NIC 810.

[0513] In some non-limiting examples, as shown in the figure of stage 1204, the deposition of the conductive coating 830 can be performed using an open mask and / or maskless deposition process such that the conductive coating 830 is formed across substantially the entire exposed layer surface 111 of the underlying material (except where the underlying material is NIC 810) to produce a treated surface (of the conductive coating 830).

[0514] In fact, if Figure 12CAs shown, the evaporated conductive coating material 832 is incident on the exposed layer surface 111 of the NIC 810 across the first portion 701 located within the NPC portion 1103, as well as on the exposed layer surface 111 of the NPC 1120 across the NPC portion 1103 located outside the first portion 701 and on the exposed layer surface 111 of the substrate 110 across the portion 1102 located outside the NPC portion 1103.

[0515] Because the exposed layer surface 111 of the NIC 810 in the first portion 701 exhibits a relatively lower initial adhesion probability S0 for the conductive coating 830 compared to the exposed layer surface 111 of the substrate 110 in the second portion 702 located outside the NPC portion 1103 and / or because the exposed layer surface 111 of the NPC 1120 in the NPC portion 1103 located outside the first portion 701 exhibits a relatively higher initial adhesion probability S0 for the conductive coating 830 compared to both the exposed layer surface 111 of the NIC 810 in the first portion 701 and the exposed layer surface 111 of the substrate 110 in the portion 1102 located outside the NPC portion 1103, the conductive coating 830 is essentially selectively deposited only on the exposed layer surface 111 of the substrate 110 in the NPC portion 1103 located outside the first portion 701 and the portion 1102 located outside the NPC portion 1103, both of which essentially lack the NIC 810. In contrast, evaporated conductive coating material 832 incident on the exposed layer surface 111 of NIC 810 across the first portion 701 tends not to deposit, as shown ( 1233 ) and the exposed layer surface 111 of NIC 810 across the first portion 701 is substantially devoid of conductive coating 830 .

[0516] Thus, a patterned surface is produced upon completion of deposition of the conductive coating 830 .

[0517] In some non-limiting examples, the initial deposition rate of the evaporated conductive coating material 832 on the exposed layer surface 111 in the second portion 702 may be at least and / or greater than about 200 times, at least and / or greater than about 550 times, at least and / or greater than about 900 times, at least and / or greater than about 1,000 times, at least and / or greater than about 1,500 times, at least and / or greater than about 1,900 times, and / or at least and / or greater than about 2,000 times the initial deposition rate of the evaporated conductive coating material 832 on the exposed layer surface 111 of the NIC 810 in the first portion 701.

[0518] Figures 13A-13CA non-limiting example of a printing process, shown generally at 1300, is shown for selectively depositing a selective coating 710 (which, in some non-limiting examples, may be a NIC 810 and / or an NPC 1120) onto an exposed layer surface 111 of an underlying material (in the figures, for simplicity of illustration only, a substrate 110).

[0519] Figure 13A A stage of process 1300 is depicted in which a stamp 1310 having protrusions 1311 thereon is provided with a selective coating 710 on exposed layer surfaces 1312 of the protrusions 1311. Those skilled in the relevant art will appreciate that the selective coating 710 can be deposited and / or deposited on the protrusion surfaces 1312 using a variety of suitable mechanisms.

[0520] Figure 13B A stage of process 1300 is depicted in which a stamp 1310 is brought into proximity 1301 with the exposed layer surface 111 such that the selective coating 710 contacts the exposed layer surface 111 and adheres thereto.

[0521] Figure 13C A stage of process 1300 is depicted in which the stamp 1310 is removed 1303 from the exposed layer surface 111 , leaving the selective coating 710 deposited on the exposed layer surface 111 .

[0522] Selective deposition of patterned electrodes

[0523] Without employing FMM within the high-temperature conductive coating 830 deposition process, the aforementioned can be combined to achieve selective deposition of at least one conductive coating 830 to form patterned electrodes (including but not limited to: the first electrode 120, the second electrode 140, the auxiliary electrode 1750, and the bus bar 4150), which in some non-limiting examples can be the second electrode 140 and / or the auxiliary electrode 1750. In some non-limiting examples, such patterning can allow and / or enhance the transmittance of the optoelectronic device 100.

[0524] Figure 14 An example patterned electrode 1400 is shown in plan view, where the second electrode 140 is suitable for an example version 1500 of the optoelectronic device 100 ( Figure 15 The electrode 1400 is formed in a pattern 1410 comprising a single continuous structure having or defining a patterned plurality of holes 1420 , wherein the holes 1420 correspond to areas of the optoelectronic device 100 where the cathode 342 is absent.

[0525] In the figure, as a non-limiting example, pattern 1410 is disposed across the entire lateral extent of device 1500, with no distinction between lateral aspects 410 of emissive areas 1910 corresponding to (sub-)pixels 340 / 264x and lateral aspects 420 of non-emissive areas 1920 surrounding such emissive areas 1910. Thus, the illustrated example may correspond to a device 1500 that is substantially transmissive with respect to light incident on an external surface thereof, such that, in addition to emission of photons generated internally to device 1500 (top emission, bottom emission, and / or dual emission) as disclosed herein, a substantial portion of such externally incident light may be transmitted through device 1500.

[0526] The transmittance of the device 1500 can be adjusted and / or modified by varying the pattern 1410 employed, including but not limited to the average size of the holes 1420 and / or the spacing and / or density of the holes 1420 .

[0527] Now go to Figure 15 , showing the Figure 14 FIG1 is a cross-sectional view of device 1500 taken along line 15-15 in FIG1. In the figure, device 1500 is shown as including substrate 110, first electrode 120, and at least one semiconducting layer 130. In some non-limiting examples, NPC 1120 is disposed on substantially all of the exposed layer surface 111 of at least one semiconducting layer 130. In some non-limiting examples, NPC 1120 may be omitted.

[0528] NICs 810 are selectively positioned in a pattern substantially corresponding to pattern 1410 on exposed layer surface 111 of an underlying material, which as shown is NPC 1120 (although in some non-limiting examples, if NPC 1120 has been omitted, the underlying material may be at least one semiconducting layer 130).

[0529] A conductive coating 830 suitable for forming a patterned electrode 1400 (in the figure, the second electrode 140) is deposited on substantially all exposed surface 111 of the underlying material using an open mask and / or maskless deposition process, either of which does not employ any FMM during the high-temperature conductive coating deposition process. The underlying material includes areas of the NIC 810 disposed in pattern 1410 and areas of the NPC 1120 in pattern 1410 where the NIC 810 has not yet been deposited. In some non-limiting examples, the areas of the NIC 810 may substantially correspond to the first portion of the aperture 1420 shown in pattern 1410.

[0530] Due to the nucleation-inhibiting properties of those areas of pattern 1410 where NIC 810 is disposed (corresponding to holes 1420), the conductive coating 830 disposed on such areas tends not to be retained, resulting in a selective deposition pattern of conductive coating 830 that substantially corresponds to the remainder of pattern 1410, thereby leaving those areas of the first portion of pattern 1410 corresponding to holes 1420 substantially devoid of conductive coating 830.

[0531] In other words, the conductive coating 830 that will form the cathode 342 is selectively deposited substantially only on the second portion, which includes those areas of the NPC 1120 that surround but do not occupy the apertures 1420 in the pattern 1410 .

[0532] Figure 16A A schematic diagram showing a plurality of patterns 1620 and 1640 of electrodes (including but not limited to: the first electrode 120 , the second electrode 140 , and the auxiliary electrode 1750 ) is shown in a plan view.

[0533] In some non-limiting examples, the first pattern 1620 includes a plurality of elongated, spaced-apart regions extending in a first lateral direction. In some non-limiting examples, the first pattern 1620 may include a plurality of first electrodes 120. In some non-limiting examples, the plurality of regions comprising the first pattern 1620 may be electrically coupled.

[0534] In some non-limiting examples, the second pattern 1640 includes a plurality of elongated, spaced-apart regions extending in a second lateral direction. In some non-limiting examples, the second lateral direction may be substantially perpendicular to the first lateral direction. In some non-limiting examples, the second pattern 1640 may include a plurality of second electrodes 140. In some non-limiting examples, the plurality of regions comprising the second pattern 1640 may be electrically coupled.

[0535] In some non-limiting examples, the first pattern 1620 and the second pattern 1640 may form part of an exemplary version, generally based on 1600 ( Figure 16C ) shows that it may include multiple PMOLED elements.

[0536] In some non-limiting examples, lateral aspect 410 of emissive region 1910 corresponding to (sub-)pixel 340 / 264x is formed, wherein first pattern 1620 overlaps second pattern 1640. In some non-limiting examples, lateral aspect 420 of non-emissive region 1920 corresponds to any lateral aspect other than lateral aspect 410.

[0537] In some non-limiting examples, the first terminal (which may be the positive terminal of the power source 15 in some non-limiting examples) is electrically coupled to at least one electrode of the first pattern 1620 (including but not limited to the first electrode 120, the second electrode 140, and the auxiliary electrode 1750). In some non-limiting examples, the first terminal is coupled to at least one electrode of the first pattern 1620 via at least one driving circuit 300. In some non-limiting examples, the second terminal (which may be the negative terminal of the power source 15 in some non-limiting examples) is electrically coupled to at least one electrode of the second pattern 1640 (including but not limited to the first electrode 120, the second electrode 140, and the auxiliary electrode 1750). In some non-limiting examples, the second terminal is coupled to at least one electrode of the second pattern 1740 via at least one driving circuit 300.

[0538] Now go to Figure 16B , showing the Figure 16A FIG1 is a cross-sectional view of apparatus 1600 at deposition stage 1600b, taken along line 16B-16B in FIG1. In the figure, apparatus 1600 at stage 1600b is shown as including substrate 110. In some non-limiting examples, NPC 1120 is disposed on exposed layer surface 111 of substrate 110. In some non-limiting examples, NPC 1120 may be omitted.

[0539] NICs 810 are selectively positioned on the exposed surface 111 of an underlying material, NPC 1120 as shown, in a pattern corresponding to the inverse of the first pattern 1620 .

[0540] A conductive coating 830, suitable for forming a first pattern 1620 of electrodes (including, but not limited to, first electrode 120, second electrode 140, and auxiliary electrode 1750) (in the figure, first electrode 120), is deposited on substantially all exposed surface 111 of the underlying material using an open mask and / or maskless deposition process, any of which does not employ any FMM during the high-temperature conductive coating deposition process. The underlying material includes regions of NIC 810 disposed in the inverse of the first pattern 1620 and regions of NPC 1120 disposed in the first pattern 1620, where NIC 810 has not yet been deposited. In some non-limiting examples, the regions of NPC 1120 may substantially correspond to the elongated, spaced-apart regions of the first pattern 1620, while the regions of NIC 810 may substantially correspond to the first portion including the gap therebetween.

[0541] Due to the nucleation-inhibiting properties of those areas of the first pattern 1620 where the NICs 810 are disposed (corresponding to the gaps therebetween), the conductive coating 830 disposed on such areas tends not to be retained, resulting in a selective deposition pattern of the conductive coating 830 that substantially corresponds to the elongated, spaced-apart areas of the first pattern 1620, thereby leaving the first portion, including the gaps therebetween, substantially devoid of conductive coating 830.

[0542] In other words, the conductive coating 830 that will form the first pattern 1620 of electrodes (including but not limited to: the first electrode 120, the second electrode 140, the auxiliary electrode 1750) is essentially selectively deposited only on the second portion of those areas that include the NPC 1120 (or in some non-limiting examples, if the NPC 1120 has been omitted, the substrate 110), which define the elongated, spaced-apart areas of the first pattern 1620.

[0543] Now go to Figure 16C , showing the Figure 16A FIG. 1 is a cross-sectional view of the device 1600 taken along line 16C-16C in FIG. 1 . In the figure, the device 1600 is shown to include a substrate 110; Figure 16B A first pattern 1620 of a first electrode 120 and at least one semiconducting layer 130 are shown deposited.

[0544] In some non-limiting examples, at least one semiconducting layer 130 can be provided as a common layer across substantially all lateral aspects of the device 1600 .

[0545] In some non-limiting examples, the NPC 1120 is disposed on substantially all of the exposed layer surface 111 of the at least one semiconductive layer 130. In some non-limiting examples, the NPC 1120 may be omitted.

[0546] NICs 810 are selectively positioned in a pattern substantially corresponding to a second pattern 1640 on the exposed layer surface 111 of an underlying material, which as shown is NPC 1120 (although in some non-limiting examples, if NPC 1120 has been omitted, the underlying material may be at least one semiconducting layer 130).

[0547] A conductive coating 830, suitable for forming a second pattern 1640 of electrodes (including, but not limited to, first electrode 120, second electrode 140, and auxiliary electrode 1750) (in the figure, second electrode 140), is deposited on substantially all exposed surface 111 of the underlying material using an open mask and / or maskless deposition process, any of which does not employ any FMM during the high-temperature conductive coating deposition process. The underlying material includes regions of NIC 810 disposed in an inverse phase of the second pattern 1640 and regions of NPC 1120 in the second pattern 1640 where NIC 810 has not yet been deposited. In some non-limiting examples, the regions of NPC 1120 may substantially correspond to the first portion of the elongated, spaced-apart regions comprising the second pattern 1640, while the regions of NIC 810 may substantially correspond to the gaps therebetween.

[0548] Due to the nucleation-inhibiting properties of those areas of the second pattern 1640 of NICs 810 that are disposed (corresponding to the gaps therebetween), the conductive coating 830 disposed on such areas tends not to be retained, resulting in a selective deposition pattern of the conductive coating 830 that substantially corresponds to the elongated, spaced-apart areas of the second pattern 1640, thereby leaving the first portion, including the gaps therebetween, substantially devoid of conductive coating 830.

[0549] In other words, the conductive coating 830 that will form the second pattern 1640 of electrodes (including but not limited to: the first electrode 120, the second electrode 140, the auxiliary electrode 1750) is essentially selectively deposited only on the second portion of those areas including the NPC 1120, which define the elongated, spaced-apart areas of the second pattern 1640.

[0550] In some non-limiting examples, the thickness of the NIC 810 and the subsequently deposited conductive coating 830 used to form one or both of the first pattern 1620 and / or second pattern 1640 of electrodes (including, but not limited to, the first electrode 120, the second electrode 140, and the auxiliary electrode 1750) can vary depending on various parameters, including, but not limited to, desired application and desired performance characteristics. In some non-limiting examples, the thickness of the NIC 810 can be comparable to and / or significantly less than the thickness of the subsequently deposited conductive coating 830. Using a relatively thin NIC 810 to achieve selective patterning of a subsequently deposited conductive coating may be suitable for providing flexible devices 1600, including, but not limited to, PMOLED devices. In some non-limiting examples, the relatively thin NIC 810 can provide a relatively flat surface onto which a barrier coating 1650 or other thin film encapsulation (TFE) layer can be deposited. In some non-limiting examples, providing such a relatively flat surface for applying the barrier coating 1650 can improve the adhesion of the barrier coating 1650 to such a surface.

[0551] At least one of the first patterns 1620 of electrodes (including but not limited to: first electrode 120, second electrode 140, auxiliary electrode 1750) and at least one of the second patterns 1640 of electrodes (including but not limited to: first electrode 120, second electrode 140, auxiliary electrode 1750) can be electrically coupled to a power supply 15 directly and / or in some non-limiting examples through their corresponding driving circuits 300 to control the emission of photons from the lateral aspect 410 of the emission area 1910 corresponding to the (sub-)pixel 340 / 264x.

[0552] Those skilled in the art will appreciate that, in some non-limiting examples, Figures 16A-16C The process for forming the second electrode 140 in the second pattern 1640 shown in FIG can be used in a similar manner to form the auxiliary electrode 1750 for the device 1600. In some non-limiting examples, the second electrode 140 thereof can include a common electrode, and the auxiliary electrode 1750 can be deposited in the second pattern 1640 (in some non-limiting examples, above the second electrode 140, or in some non-limiting examples, below the second electrode) and electrically coupled thereto. In some non-limiting examples, the second pattern 1640 for such an auxiliary electrode 1750 can be such that the elongated, spaced-apart regions of the second pattern 1640 are substantially located within the lateral aspect 420 of the non-emissive region 1920 surrounding the lateral aspect 410 of the emissive region 1910 corresponding to the (sub) pixel 340 / 264x. In some non-limiting examples, the second pattern 1640 for such an auxiliary electrode 1750 can be such that the elongated, spaced-apart regions of the second pattern 1640 are substantially located within the lateral aspects 410 of the emitting regions 1910 corresponding to the (sub) pixels 340 / 264x and / or the lateral aspects 420 of the non-emitting regions 1920 surrounding them.

[0553] Figure 17 An example cross-sectional view of an example version 1700 of the optoelectronic device 100 is shown that is substantially similar to the device, but further includes at least one auxiliary electrode 1750 arranged in the pattern described above and electrically coupled to the second electrode 140 (not shown).

[0554] The auxiliary electrode 1750 is conductive. In some non-limiting examples, the auxiliary electrode 1750 can be formed from at least one metal and / or metal oxide. Non-limiting examples of such metals include Cu, Al, molybdenum (Mo) and / or Ag. As non-limiting examples, the auxiliary electrode 1750 can include a multilayer metal structure, including but not limited to a multilayer metal structure formed from Mo / Al / Mo. Non-limiting examples of such metal oxides include ITO, ZnO, IZO and / or other oxides containing In and / or Zn. In some non-limiting examples, the auxiliary electrode 1750 can include a multilayer structure formed from a combination of at least one metal and at least one metal oxide, the combination including but not limited to Ag / ITO, Mo / ITO, ITO / Ag / ITO and / or ITO / Mo / ITO. In some non-limiting examples, the auxiliary electrode 1750 includes a plurality of such conductive materials.

[0555] Device 1700 is shown to include a substrate 110 , a first electrode 120 , and at least one semiconducting layer 130 .

[0556] In some non-limiting examples, the NPC 1120 is disposed on substantially all of the exposed layer surface 111 of the at least one semiconductive layer 130. In some non-limiting examples, the NPC 1120 may be omitted.

[0557] The second electrode 140 is disposed on substantially all exposed layer surfaces 111 of the NPC 1120 (or at least one semiconducting layer 130 if the NPC 1120 has been omitted).

[0558] In some non-limiting examples, particularly in top-emitting devices 1700, the second electrode 140 can be formed by depositing a relatively thin conductive film layer (not shown) to reduce, by way of non-limiting example, optical interference (including, but not limited to, attenuation, reflection, and / or diffusion) associated with the presence of the second electrode 140. In some non-limiting examples, as discussed elsewhere, the reduced thickness of the second electrode 140 can generally increase the sheet resistance of the second electrode 140, which in some non-limiting examples can reduce the performance and / or efficiency of the device 1700. By providing an auxiliary electrode 1750 electrically coupled to the second electrode 140, in some non-limiting examples, the sheet resistance and, therefore, the IR drop associated with the second electrode 140 can be reduced.

[0559] In some non-limiting examples, the device 1700 may be a bottom-emitting and / or dual-emitting device 1700. In such examples, the second electrode 140 may be formed as a relatively thick conductive layer without substantially affecting the optical characteristics of such device 1700. However, even in such cases, as a non-limiting example, the second electrode 140 may still be formed as a relatively thin conductive film layer (not shown) such that the device 1700 may be substantially transmissive with respect to light incident on its external surface, such that, in addition to the emission of photons generated internally in the device 1700 as disclosed herein, a substantial portion of such externally incident light may be transmitted through the device 1700.

[0560] NICs 810 are selectively positioned in a pattern on the exposed surface 111 of an underlying material, such as the second electrode 140. In some non-limiting examples, the NICs 810 can be positioned as a series of parallel rows 1720 in a first portion of the pattern, as shown.

[0561] A conductive coating 830 suitable for forming a patterned auxiliary electrode 1750 is deposited on substantially all exposed layer surfaces 111 of the underlying material using an open mask and / or maskless deposition process, any of which does not employ any FMM during the high-temperature conductive coating deposition process. The underlying material includes areas of the NIC 810 disposed in the pattern of rows 1720 and areas of the second electrode 140 where the NIC 810 has not yet been deposited.

[0562] Due to the nucleation inhibiting properties of those rows 1720 where the NIC 810 is disposed, the conductive coating 830 disposed on such rows 1720 tends not to be retained, resulting in a selective deposition pattern of the conductive coating 830 that substantially corresponds to at least one second portion of the pattern, thereby leaving the first portion including the rows 1720 substantially devoid of conductive coating 830.

[0563] In other words, the conductive coating 830 that will form the auxiliary electrode 1750 is deposited selectively substantially only on the second portion, which includes those areas of the NPC 1120 that surround but do not occupy the row 1720 .

[0564] In some non-limiting examples, selectively depositing auxiliary electrode 1750 to cover only areas between certain rows 1720 of the lateral aspect of device 1700 , while leaving other areas uncovered, can control and / or reduce optical interference associated with the presence of auxiliary electrode 1750 .

[0565] In some non-limiting examples, the auxiliary electrodes 1750 can be selectively deposited in a pattern that is not easily detectable by the naked eye from typical viewing distances.

[0566] In some non-limiting examples, the auxiliary electrode 1750 can be formed in devices other than OLED devices, including to reduce the effective resistance of electrodes of such devices.

[0567] Auxiliary electrode

[0568] In the high temperature conductive coating 830 deposition process (including but not limited to Figure 17 The ability to pattern electrodes (including but not limited to: first electrode 120, second electrode 140, auxiliary electrode 1750 and / or bus bar 4150) by employing a selective coating 710 without employing an FMM during the process depicted in ) allows for deployment of multiple configurations of the auxiliary electrode 1750.

[0569] Figure 18A A portion of an exemplary version 1800 of an optoelectronic device 100 is shown in plan view, having a plurality of emissive regions 1910a-1910j and surrounding them at least one non-emissive region 1820. In some non-limiting examples, the device 1800 may be an AMOLED device, wherein each of the emissive regions 1910a-1910j corresponds to its (sub-)pixel 340 / 264x.

[0570] Figures 18B-18D Examples of portions of device 1800 corresponding to adjacent emitting regions 1910a and 1910b, and portions of at least one non-emitting region 1820 therebetween, are shown in conjunction with different configurations of auxiliary electrodes 1750 (including but not limited to 1750b-1750d) overlying the same. In some non-limiting examples, although not in Figures 18B-18D Although not explicitly stated in , the second electrode 140 of the device 1800 is understood to substantially cover at least both of its emitting regions 1910a and 1910b and a portion of at least one non-emitting region 1820 therebetween.

[0571] exist Figure 18B, the auxiliary electrode configuration 1750b is disposed between two adjacent emission regions 1910a and 1910b and is electrically coupled to the second electrode 140. In this example, the width α of the auxiliary electrode configuration 1750b is less than the spacing distance δ between adjacent emission regions 1910a and 1910b. Thus, there is a gap within at least one non-emitting region 1820 on each side of the auxiliary electrode configuration 1750b. In some non-limiting examples, such an arrangement can reduce the likelihood that the auxiliary electrode configuration 1750b interferes with the light output of the device 1800 from at least one of the emission regions 1910a and 1910b (in some non-limiting examples). In some non-limiting examples, such an arrangement may be suitable where the auxiliary electrode configuration 1750b is relatively thick (in some non-limiting examples, greater than a thickness on the order of several hundred nm and / or several microns). In some non-limiting examples, the ratio of the height (thickness) of the auxiliary electrode configuration 1750b to its width (i.e., aspect ratio) can be greater than about 0.05, such as about 0.1 or greater, about 0.2 or greater, about 0.5 or greater, about 0.8 or greater, about 1 or greater, and / or about 2 or greater. As a non-limiting example, the height (thickness) of the auxiliary electrode configuration 1750b can be greater than about 50 nm, such as about 80 nm or greater, about 100 nm or greater, about 200 nm or greater, about 500 nm or greater, about 700 nm or greater, about 1000 nm or greater, about 1500 nm or greater, about 1700 nm or greater, or about 2000 nm or greater.

[0572] exist Figure 18C , auxiliary electrode configuration 1750c is disposed between two adjacent emissive regions 1910a and 1910b and is electrically coupled to second electrode 140. In this example, the width α of auxiliary electrode configuration 1750c is substantially the same as the separation distance δ between adjacent emissive regions 1910a and 1910b. Thus, there is no gap within at least one non-emissive region 1820 on either side of auxiliary electrode configuration 1750c. In some non-limiting examples, such an arrangement may be suitable in a high pixel density device 1800, as a non-limiting example, where the separation distance δ between adjacent emissive regions 1910a and 1910b is relatively small.

[0573] exist Figure 18D, the auxiliary electrode 1750d is positioned between two adjacent emission regions 1910a and 1910b and is electrically coupled to the second electrode 140. In this example configuration, the width α of the auxiliary electrode 1750d is greater than the spacing distance δ between the adjacent emission regions 1910a and 1910b. Therefore, a portion of the auxiliary electrode 1750d overlaps with a portion of at least one of the adjacent emission regions 1910a and / or 1910b. Although the figure shows the degree of overlap of the auxiliary electrode 1750d with each of the adjacent emission regions 1910a and 1910b, in some non-limiting examples, the degree of overlap and / or, in some non-limiting examples, the profile of the overlap between the auxiliary electrode 1750d and at least one of the adjacent emission regions 1910a and 1910b can be changed and / or modulated.

[0574] Figure 19 A schematic diagram showing an example of a pattern 1950 of an auxiliary electrode 1750 formed as a grid is shown in a plan view, the grid being overlaid on lateral aspects 410 of an emission region 1910 and lateral aspects 420 of a non-emissive region 1920 surrounding the emission region 1910 of a (sub)pixel 340 / 264x that may correspond to an example version 1900 of the optoelectronic device 100.

[0575] In some non-limiting examples, pattern 1950 of auxiliary electrode 1750 extends substantially only over some, but not all, lateral aspects 420 of non-emitting region 1920 so as not to substantially cover any of lateral aspects 410 of emitting region 1910 .

[0576] It should be understood by those skilled in the relevant art that, although the pattern 1950 of the auxiliary electrode 1750 is shown in the figures as being formed as a continuous structure such that all of its elements are physically connected and electrically coupled to one another and to at least one electrode (including, but not limited to, the first electrode 120, the second electrode 140, the auxiliary electrode 1750, and the bus bar 4150), in some non-limiting examples, the at least one electrode may be the first electrode 120 and / or the second electrode 140. In some non-limiting examples, the pattern 1950 of the auxiliary electrode 1750 may be provided as a plurality of discrete elements of the pattern 1950 of the auxiliary electrode 1750, which, while remaining electrically coupled to one another, are not physically connected to one another. Even so, such discrete elements of the pattern 1950 of the auxiliary electrode 1750 can significantly reduce the sheet resistance of the at least one electrode to which they are electrically coupled, and thus reduce the sheet resistance of the device 1900, thereby increasing the efficiency of the device 1900 without substantially interfering with its optical properties.

[0577] In some non-limiting examples, the auxiliary electrode 1750 can be used in optoelectronic devices 100 having various arrangements of (sub)pixels 340 / 264x. In some non-limiting examples, the (sub)pixel 340 / 264x arrangement can be substantially diamond-shaped.

[0578] As a non-limiting example, Figure 20A A plan view of a plurality of groups 2041-2043 of emissive regions 1910 in an example version 2000 of optoelectronic device 100 is shown, each emissive region corresponding to a sub-pixel 264x, surrounded by a lateral aspect of a plurality of non-emissive regions 1920 comprising a diamond-shaped configuration of PDLs 440. In some non-limiting examples, the configuration is defined by a pattern 2041-2043 of emissive regions 1910 and PDLs 440 in alternating patterns of first and second rows.

[0579] In some non-limiting examples, the lateral aspect 420 of the non-emitting regions 1920 including the PDL 440 can be substantially elliptical. In some non-limiting examples, the major axis of the lateral aspect 420 of the non-emitting regions 1920 in a first row is aligned with and substantially perpendicular to the major axis of the lateral aspect 420 of the non-emitting regions 1920 in a second row. In some non-limiting examples, the major axis of the lateral aspect 420 of the non-emitting regions 1920 in the first row is substantially parallel to the axis of the first row.

[0580] In some non-limiting examples, the first group 2041 of emissive regions 1910 corresponds to a sub-pixel 264x that emits light at a first wavelength. In some non-limiting examples, the sub-pixels 264x of the first group 2041 can correspond to red (R) sub-pixels 2641. In some non-limiting examples, the lateral dimensions 410 of the first group 2041 of emissive regions 1910 can have a substantially diamond-shaped configuration. In some non-limiting examples, the first group 2041 of emissive regions 1910 are located in a first row of the pattern, before and after the PDL 440. In some non-limiting examples, the lateral dimensions 410 of the first group 2041 of emissive regions 1910 slightly overlap with the lateral dimensions 420 of the non-emissive regions 1920 before and after the PDL 440 in the same row, and with the lateral dimensions 420 of the adjacent non-emissive regions 1920 that include the PDL 440 in the before and after patterns of the second row.

[0581] In some non-limiting examples, the second group 2042 of emissive regions 1910 corresponds to sub-pixels 264x that emit light at a second wavelength. In some non-limiting examples, the sub-pixels 264x of the second group 2042 can correspond to green (G) sub-pixels 2642. In some non-limiting examples, the lateral aspects 410 of the second group 2041 of emissive regions 1910 can have a substantially elliptical configuration. In some non-limiting examples, the emissive regions 1910 of the second group 2041 are positioned in a second row of patterns, before and after the PDL 440. In some non-limiting examples, the major axes of some of the lateral aspects 410 of the second group 2041 of emissive regions 1910 can be at a first angle. In some non-limiting examples, the first angle can be 45° relative to the axis of the second row. In some non-limiting examples, the major axes of other ones of the lateral aspects 410 of the emission areas 1910 of the second group 2041 can be at a second angle, which in some non-limiting examples can be substantially perpendicular to the first angle. In some non-limiting examples, emission areas 1910 of the first group 2041 whose lateral aspects 410 have a major axis at the first angle alternate with emission areas 1910 of the first group 2041 whose lateral aspects 410 have a major axis at the second angle.

[0582] In some non-limiting examples, the third group 2043 of emissive regions 1910 corresponds to a sub-pixel 264x that emits light at a third wavelength. In some non-limiting examples, the sub-pixels 264x of the third group 2043 can correspond to blue (B) sub-pixels 2643. In some non-limiting examples, the lateral aspects 410 of the emissive regions 1910 of the third group 2043 can have a substantially diamond-shaped configuration. In some non-limiting examples, the emissive regions 1910 of the third group 2043 are located before and after the PDL 440 in the first row of the pattern. In some non-limiting examples, the lateral aspects 410 of the emissive regions 1910 of the third group 2043 slightly overlap with the lateral aspects 410 of the non-emissive regions 1920 before and after the PDL 440 in the same row, and with the lateral aspects 420 of the adjacent non-emissive regions 1920 that include the PDL 440 in the before and after patterns of the second row. In some non-limiting examples, the pattern of the second row includes a first group 2041 of emission regions 1910 alternating with a third group 2043 of emission regions 1910 , each region preceding and following a PDL 440 .

[0583] Now go to Figure 20B , showing the Figure 20A20B-20B in FIG. In the figure, device 2000 is shown as including a plurality of elements of substrate 110 and first electrode 120 formed on an exposed layer surface 111 thereof. Substrate 110 may include a base substrate 112 (not shown for simplicity of illustration) and / or at least one TFT structure 200 corresponding to and used to drive each sub-pixel 264x. PDL 440 is formed on substrate 110 between the elements of first electrode 120 to define an emissive region 1910 above each element of first electrode 120, the emissive region being separated by a non-emissive region 1920 including PDL 440. In the figure, emissive regions 1910 all correspond to second group 2042.

[0584] In some non-limiting examples, at least one semiconductive layer 130 is deposited on each element of the first electrode 120 , between the surrounding PDLs 440 .

[0585] In some non-limiting examples, a second electrode 140 (which may be a common cathode in some non-limiting examples) may be deposited over the emission regions 1910 of the second group 2042 to form the Green sub-pixels 2642 thereof and over the surrounding PDL 440 .

[0586] In some non-limiting examples, the NIC 810 is selectively deposited over the second electrode 140 across the lateral aspects 410 of the emissive regions 1910 of the second group 2042 of Green sub-pixels 2642 to allow the conductive coating 830 to be selectively deposited over portions of the second electrode 140 that are substantially devoid of the NIC 810, i.e., across the lateral aspects 420 of the non-emissive regions 1920 that include the PDL 440. In some non-limiting examples, the conductive coating 830 may tend to accumulate along substantially planar portions of the PDL 440 because the conductive coating 830 may not tend to remain on sloped portions of the PDL 440, but rather tend to fall to the bottom of such sloped portions coated with the NIC 810. In some non-limiting examples, the conductive coating 830 on the substantially planar portions of the PDL 440 may form at least one auxiliary electrode 1750 that may be electrically coupled to the second electrode 140.

[0587] In some non-limiting examples, the device 2000 can include a CPL 3610 and / or an outcoupling layer. As non-limiting examples, such a CPL 3610 and / or an outcoupling layer can be disposed directly on the surface of the second electrode 140 and / or the surface of the NIC 810. In some non-limiting examples, such a CPL 3610 and / or an outcoupling layer can be provided across the lateral aspect 410 of at least one emissive region 1910 corresponding to a (sub-)pixel 340 / 264x.

[0588] In some non-limiting examples, the NIC 810 may also serve as an index matching coating. In some non-limiting examples, the NIC 810 may also serve as an outcoupling layer.

[0589] In some non-limiting examples, the device 2000 includes an encapsulation layer. Non-limiting examples of such an encapsulation layer include a glass cover, a barrier film, a barrier adhesive, and / or a TFE layer 2050, as shown by the dashed line in the figure, for encapsulating the device 2000. In some non-limiting examples, the TFE layer 2050 can be considered a type of barrier coating 1650.

[0590] In some non-limiting examples, an encapsulation layer can be disposed over at least one of the second electrode 140 and / or the NIC 810. In some non-limiting examples, the device 2000 includes additional optical and / or structural layers, coatings, and components, including but not limited to polarizers, color filters, anti-reflective coatings, anti-glare coatings, cover grades, and / or optically clear adhesives (OCAs).

[0591] Now go to Figure 20C , showing the Figure 20A FIG2 is an exemplary cross-sectional view of device 2000 taken along line 20C-20C in FIG2. In the figure, device 2000 is shown as including a substrate 110 and a plurality of elements of first electrode 120 formed on an exposed layer surface 111 thereof. PDLs 440 are formed on substrate 110 between the elements of first electrode 120 to define emission regions 1910 above each element of first electrode 120, separated by non-emitting regions 1920 including PDLs 440. In the figure, emission regions 1910 correspond to first group 2041 and third group 2043 in an alternating manner.

[0592] In some non-limiting examples, at least one semiconductive layer 130 is deposited on each element of the first electrode 120 , between the surrounding PDLs 440 .

[0593] In some non-limiting examples, the second electrode 140 (which can be a common cathode in some non-limiting examples) can be deposited over the emission region 1910 of the first group 2041 to form its R(ed) sub-pixel 2641, deposited over the emission region 1910 of the third group 2043 to form its B(lue) sub-pixel 2643 and deposited over the surrounding PDL 440.

[0594] In some non-limiting examples, the NIC 810 is selectively deposited over the second electrode 140 across the lateral aspects 410 of the emissive regions 1910 of the first group 2041 of R(ed) sub-pixels 2641 and the third group of B(lue) sub-pixels 2643, to allow the conductive coating 830 to be selectively deposited over portions of the second electrode 140 that are substantially devoid of the NIC 810, i.e., across the lateral aspects 420 of the non-emissive regions 1920 that include the PDL 440. In some non-limiting examples, the conductive coating 830 may tend to accumulate along substantially planar portions of the PDL 440 because the conductive coating 830 may not tend to remain on sloped portions of the PDL 440, but rather tend to fall to the bottom of such sloped portions coated with the NIC 810. In some non-limiting examples, the conductive coating 830 on the substantially planar portions of the PDL 440 may form at least one auxiliary electrode 1750 that may be electrically coupled to the second electrode 140.

[0595] Now go to Figure 21 , shows an example version 2100 of the optoelectronic device 100, which covers Figure 4 1 , but with a number of additional deposition steps as described herein.

[0596] The device 2100 shows a NIC 810 selectively deposited on an exposed layer surface 111 of an underlying material (in the figure, the second electrode 140) within a first portion of the device 2100 (which substantially corresponds to a lateral aspect 410 of the emissive area 1910 corresponding to the (sub)pixel 340 / 264x) and not within a second portion of the device 2100 (which substantially corresponds to a lateral aspect 420 of the non-emissive area 1920 surrounding the first portion).

[0597] In some non-limiting examples, NIC 810 may be selectively deposited using a shadow mask.

[0598] The NIC 810 provides a surface with a relatively low initial adhesion probability S0 within the first portion for the conductive coating 830 that is subsequently deposited to form the auxiliary electrode 1750 .

[0599] After selectively depositing the NIC 810 , a conductive coating 830 is deposited over the device 2100 , but remains substantially only within the second portion that is substantially devoid of the NIC 810 , to form the auxiliary electrode 1750 .

[0600] In some non-limiting examples, the conductive coating 830 can be deposited using an open mask and / or a maskless deposition process.

[0601] The auxiliary electrode 1750 is electrically coupled to the second electrode 140 to reduce the sheet resistance of the second electrode 140 , including by being positioned over and in physical contact with the second electrode 140 across a second portion substantially devoid of the NIC 810 as shown.

[0602] In some non-limiting examples, the conductive coating 830 can include substantially the same material as the second electrode 140 to ensure a high initial adhesion probability S0 for the conductive coating 830 in the second portion.

[0603] In some non-limiting examples, the second electrode 140 may include substantially pure Mg and / or an alloy of Mg with another metal, including but not limited to Ag. In some non-limiting examples, the Mg:Ag alloy composition may range from about 1:9 to about 9:1 by volume. In some non-limiting examples, the second electrode 140 may include a metal oxide, including but not limited to a ternary metal oxide, such as but not limited to ITO and / or IZO and / or a combination of metals and / or metal oxides.

[0604] In some non-limiting examples, the conductive coating 830 used to form the auxiliary electrode 1750 can include substantially pure Mg.

[0605] Now go to Figure 22 , shows an example version 2200 of the optoelectronic device 100, which covers Figure 4 1 , but with a number of additional deposition steps as described herein.

[0606] Device 2200 shows NIC 810 selectively deposited over exposed layer surface 111 of an underlying material (in the figure, second electrode 140) within a first portion of device 2200 (which substantially corresponds to a portion of lateral aspect 410 corresponding to emissive region 1910 of (sub)pixel 340 / 264x) and not within a second portion. In the figure, the first portion extends partially along the extent of the oblique portion of PDL 440 that defines emissive region 1910.

[0607] In some non-limiting examples, NIC 810 may be selectively deposited using a shadow mask.

[0608] The NIC 810 provides a surface with a relatively low initial adhesion probability S0 within the first portion for the conductive coating 830 deposited thereafter to form the auxiliary electrode 1750 .

[0609] After selectively depositing NIC 810, conductive coating 830 is deposited over device 2200, but remains substantially only within the second portion substantially devoid of NIC 810, to form auxiliary electrode 1750. Thus, in device 2200, auxiliary electrode 1750 extends partially across the sloped portion of PDL 440 that defines emission region 1910.

[0610] In some non-limiting examples, the conductive coating 830 can be deposited using an open mask and / or a maskless deposition process.

[0611] The auxiliary electrode 1750 is electrically coupled to the second electrode 140 to reduce the sheet resistance of the second electrode 140 , including by being positioned over and in physical contact with the second electrode 140 across a second portion substantially devoid of the NIC 810 as shown.

[0612] In some non-limiting examples, the material that may comprise the second electrode 140 may not have a high initial adhesion probability S0 for the conductive coating 830 .

[0613] Figure 23 Such a scenario is illustrated: there is shown an example version 2300 of the optoelectronic device 100, which covers Figure 4 1 , but with a number of additional deposition steps as described herein.

[0614] The device 2300 shows the NPC 1120 deposited over the exposed layer surface 111 of an underlying material (in the figure, the second electrode 140).

[0615] In some non-limiting examples, NPC 1120 may be deposited using an open mask and / or maskless deposition process.

[0616] Thereafter, NIC 810 is selectively deposited over an exposed layer surface 111 of an underlying material (in the figure, NPC 1120) within a first portion of the device 2300 (which substantially corresponds to a portion of a lateral aspect 410 of the emissive area 1910 corresponding to the (sub)pixel 340 / 264x) and not within a second portion of the device 2300 (which substantially corresponds to a lateral aspect 420 of the non-emissive area 1920 surrounding the first portion).

[0617] In some non-limiting examples, NIC 810 may be selectively deposited using a shadow mask.

[0618] The NIC 810 provides a surface with a relatively low initial adhesion probability S0 within the first portion for the conductive coating 830 deposited thereafter to form the auxiliary electrode 1750 .

[0619] After selectively depositing the NIC 810 , a conductive coating 830 is deposited over the device 2300 , but remains substantially only within the second portion that is substantially devoid of the NIC 810 , to form the auxiliary electrode 1750 .

[0620] In some non-limiting examples, the conductive coating 830 can be deposited using an open mask and / or a maskless deposition process.

[0621] The auxiliary electrode 1750 is electrically coupled to the second electrode 140 to reduce its sheet resistance. Although the auxiliary electrode 1750 is not shown as being located above and in physical contact with the second electrode 140, a person skilled in the relevant art will appreciate that the auxiliary electrode 1750 can be electrically coupled to the second electrode 140 by any of a number of well-known mechanisms. As a non-limiting example, the presence of a relatively thin film (in some non-limiting examples, up to about 50 nm) of the NIC 810 and / or NPC 1120 can still allow current to pass therethrough, thereby reducing the sheet resistance of the second electrode 140.

[0622] Now go to Figure 24 , shows an example version 2400 of the optoelectronic device 100, which covers Figure 4 1 , but with a number of additional deposition steps as described herein.

[0623] The device 2400 shows the NIC 810 deposited on an exposed layer surface 111 of an underlying material (in the figure, the second electrode 140).

[0624] In some non-limiting examples, NIC 810 may be deposited using an open mask and / or maskless deposition process.

[0625] The NIC 810 provides a surface with a relatively low initial adhesion probability S0 for the subsequently deposited conductive coating 830 to form the auxiliary electrode 1750 .

[0626] After depositing NIC 810, NPC 1120 is selectively deposited on an exposed layer surface 111 of the underlying material (in the figure, NIC 810) within the NPC portion of the device 2400 (which substantially corresponds to a portion of the lateral aspect 420 of the non-emissive area 1920 surrounding the first portion of the device 2400, substantially corresponding to the lateral aspect 410 of the emissive area 1910 corresponding to the (sub-)pixel 340 / 264x).

[0627] In some non-limiting examples, NPC 1120 may be selectively deposited using a shadow mask.

[0628] The NPC 1120 provides a surface with a relatively high initial adhesion probability S0 within the first portion for the conductive coating 830 deposited thereafter to form the auxiliary electrode 1750 .

[0629] After selective deposition of the NPC 1120 , the conductive coating 830 is deposited over the device 2400 , but remains substantially only within the portion of the NPC where the NIC 810 has overlapped the NPC 1120 to form the auxiliary electrode 1750 .

[0630] In some...

Claims

1. An optoelectronic device having a plurality of layers, the optoelectronic device comprising: a first capping layer comprising a first capping layer material and disposed in a first emission region, the first emission region configured to emit photons having a first wavelength spectrum characterized by a first onset wavelength through the first capping layer; as well as a second cover layer comprising a second cover layer material and disposed in a second emission region, the second emission region being configured to emit, through the second cover layer, photons having a second wavelength spectrum characterized by a second onset wavelength that is different from the first onset wavelength; in: at least one of the first capping layer and the first capping layer material exhibits a first absorption edge at a first absorption edge wavelength shorter than the first onset wavelength; at least one of the second cover layer and the second cover layer material exhibits a second absorption edge at a second absorption edge wavelength shorter than the second onset wavelength; in, at least one of the first cover layer and the first cover layer material exhibits a first refractive index at at least one wavelength in the first wavelength spectrum, the first refractive index being greater than 1.8; and / or, at least one of the second cover layer and the second cover layer material exhibits a second refractive index at at least one wavelength in the second wavelength spectrum, the second refractive index being greater than 1.8; At least one of the first and second covering layers is a nucleation inhibiting coating (NIC) for patterned conductive coating, wherein an exposed layer surface of at least one of the first and second covering layers lacks a closed film of the conductive coating. The optoelectronic device of claim 1 , wherein the first start wavelength is shorter than the second start wavelength. The optoelectronic device according to claim 1 , wherein the first absorption edge wavelength is shorter than the second absorption edge wavelength.

4. The optoelectronic device of claim 1 , wherein the first absorption edge is characterized by a first extinction wavelength at which an extinction coefficient of at least one of the first capping layer and the first capping layer material is equal to a threshold value, and the second absorption edge is characterized by a second extinction wavelength at which an extinction coefficient of at least one of the second capping layer and the second capping layer material is equal to the threshold value.

5. The optoelectronic device of claim 4, wherein the first onset wavelength is less than 50 nm longer than the first absorption edge wavelength. 6 . The optoelectronic device according to claim 4 , wherein the first extinction wavelength is the longest wavelength among at least one wavelength at which the extinction coefficient of at least one of the first capping layer and the first capping layer material is equal to the threshold value.

7. The optoelectronic device of claim 4, wherein a first derivative of the extinction coefficient of at least one of the first capping layer and the first capping layer material as a function of wavelength is negative at the first extinction wavelength. 8 . The optoelectronic device of claim 4 , wherein the extinction coefficient of at least one of the first capping layer and the first capping layer material is less than the threshold value at a wavelength longer than the first extinction wavelength.

9. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the first capping layer and the first capping layer material is less than the threshold value at all wavelengths longer than the first extinction wavelength.

10. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the first capping layer and the first capping layer material is less than 0.1 at any wavelength longer than the first onset wavelength.

11. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the first capping layer and the first capping layer material exceeds 0.1 at a wavelength shorter than the first absorption edge wavelength.

12. The optoelectronic device of claim 4, wherein the second onset wavelength is less than 200 nm longer than the second absorption edge wavelength.

13. The optoelectronic device of claim 4, wherein the second extinction wavelength is a longest wavelength among at least one wavelength at which the extinction coefficient of at least one of the second capping layer and the second capping layer material is equal to the threshold value.

14. The optoelectronic device of claim 4, wherein a first derivative of the extinction coefficient of at least one of the second cladding layer and the second cladding layer material as a function of wavelength is negative at the second extinction wavelength.

15. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the second capping layer and the second capping layer material is less than the threshold value at a wavelength longer than the second extinction wavelength.

16. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the second capping layer and the second capping layer material is less than the threshold value at all wavelengths longer than the second extinction wavelength.

17. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the second capping layer and the second capping layer material is less than 0.1 at any wavelength longer than the second onset wavelength.

18. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the second capping layer and the second capping layer material exceeds 0.1 at a wavelength shorter than the second absorption edge wavelength.

19. The optoelectronic device of claim 4, wherein a refractive index of at least one of the second capping layer and the second capping layer material for at least one wavelength longer than the second absorption edge wavelength exceeds a refractive index of at least one of the first capping layer and the first capping layer material for at least one wavelength shorter than the second absorption edge wavelength.

20. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the first capping layer and the first capping layer material is less than the threshold value at the second onset wavelength.

21. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the first capping layer and the first capping layer material is less than the threshold value at all wavelengths in the second wavelength spectrum.

22. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the first capping layer and the first capping layer material is less than 0.1 at any wavelength in the second wavelength spectrum.

23. The optoelectronic device of claim 4, wherein a refractive index of at least one of the first capping layer and the first capping layer material for at least one wavelength in the first wavelength spectrum exceeds the refractive index of at least one of the first capping layer and the first capping layer material for at least one wavelength in the second wavelength spectrum.

24. The optoelectronic device of claim 4, wherein a refractive index of at least one of the second capping layer and the second capping layer material for at least one wavelength in the second wavelength spectrum exceeds the refractive index of at least one of the second capping layer and the second capping layer material for at least one wavelength in the first wavelength spectrum.

25. The optoelectronic device of claim 4, wherein at least one of the first capping layer and the first capping layer material has a refractive index of less than 1.8 for at least one wavelength of the second wavelength spectrum.

26. The optoelectronic device of claim 4, wherein at least one of the second capping layer and the second capping layer material has a refractive index less than 1.8 in at least one wavelength of the first wavelength spectrum.

27. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the second capping layer and the second capping layer material exceeds the extinction coefficient of at least one of the first capping layer and the first capping layer material for at least one wavelength in the first wavelength spectrum.

28. The optoelectronic device of claim 4, wherein the extinction coefficient of at least one of the second capping layer and the second capping layer material exceeds the extinction coefficient of at least one of the first capping layer and the first capping layer material for each wavelength in the first wavelength spectrum.

29. The optoelectronic device of claim 4, wherein the threshold value is one of: 0.1, 0.09, 0.08, 0.06, 0.05, 0.03, 0.01, 0.005, and 0.

001.

30. The optoelectronic device of claim 1, wherein the first and second emitting regions occupy different areas of the device in a lateral direction.

31. The optoelectronic device of claim 1, wherein the first wavelength spectrum and the second wavelength spectrum are in the visible spectrum.

32. The optoelectronic device of claim 1, wherein the first wavelength spectrum has a first peak wavelength, and the second wavelength spectrum has a second peak wavelength that is longer than the first peak wavelength.

33. An optoelectronic device according to claim 32, wherein the first starting wavelength is the shortest wavelength of at least one wavelength, and at the first starting wavelength, the intensity of the first wavelength spectrum is one of the following: 20%, 15%, 10%, 5%, 3%, 1% and 0.1% of the intensity at the first peak wavelength.

34. An optoelectronic device according to claim 32 or 33, wherein the second starting wavelength is the shortest wavelength of at least one wavelength, and at the second starting wavelength, the intensity of the second wavelength spectrum is one of the following: 20%, 15%, 10%, 5%, 3%, 1% and 0.1% of the intensity at the second peak wavelength.

35. The optoelectronic device of claim 1, wherein the first wavelength spectrum corresponds to a color that is at least one of B (lue) and G (reen).

36. The optoelectronic device of claim 1, wherein the second wavelength spectrum corresponds to a color that is at least one of R(ed) and G(reen).

37. The optoelectronic device of claim 1, wherein the first wavelength spectrum corresponds to a color that is B(lue), and the second wavelength spectrum corresponds to a color that is at least one of G(reen) and R(ed).

38. The optoelectronic device of claim 1, wherein the first wavelength spectrum corresponds to a color that is Green and the second wavelength spectrum corresponds to a color that is R(ed).

39. The optoelectronic device of Claim 1, wherein the first capping layer material has a different composition than the second capping layer material.

40. The optoelectronic device of claim 1, wherein a thickness of the first capping layer is the same as a thickness of the second capping layer. The optoelectronic device of claim 1 , wherein a thickness of the first capping layer is different from a thickness of the second capping layer.

42. The optoelectronic device of claim 1, wherein the thickness of the first capping layer is in a range between 5 nm and 120 nm.

43. The optoelectronic device of claim 1, wherein the thickness of the first capping layer exceeds 10 nm.

44. The optoelectronic device of claim 1, wherein the thickness of the first capping layer is less than 100 nm.

45. The optoelectronic device of claim 1, wherein the thickness of the second capping layer is in a range between 5 nm and 120 nm.

46. The optoelectronic device of claim 1, wherein the second capping layer has a thickness exceeding 10 nm.

47. The optoelectronic device of claim 1, wherein the thickness of the second capping layer is less than 100 nm.

48. The optoelectronic device of claim 1, further comprising at least one electrode coating in the first and second emitting regions.

49. The optoelectronic device of claim 48, wherein the first capping layer is disposed on an exposed layer surface of the at least one electrode coating.

50. The optoelectronic device of claim 49, wherein the second capping layer is disposed on an exposed layer surface of the at least one electrode coating.

51. The optoelectronic device of claim 49, wherein the at least one electrode coating has a first electrode thickness in the first emission region.

52. The optoelectronic device of claim 51, wherein the at least one electrode coating has a second electrode thickness in the second emission region. The optoelectronic device of claim 52 , wherein the first electrode thickness is less than the second electrode thickness. The optoelectronic device of claim 53 , wherein a quotient of the first electrode thickness divided by the second electrode thickness is less than 0.

9.

55. The optoelectronic device of claim 53, wherein the first electrode thickness is in the range of 5 nm to 100 nm.

56. An optoelectronic device according to claim 53, wherein the second electrode thickness is in the range of 10 nm to 60 nm. The optoelectronic device of claim 52 , wherein the second electrode thickness is less than the first electrode thickness. The optoelectronic device of claim 57 , wherein a quotient of the second electrode thickness divided by the first electrode thickness is less than 0.

9.

59. The optoelectronic device of claim 57, wherein the first electrode thickness is in the range of 10 nm to 60 nm.

60. The optoelectronic device of claim 57, wherein the second electrode thickness is in the range of 5 nm to 100 nm.

61. The optoelectronic device of claim 49, wherein the at least one electrode coating comprises a metal coating and the conductive coating disposed on an exposed layer surface of the metal coating.

62. The optoelectronic device of claim 61, wherein the conductive coating extends between the metal coating and the second capping layer in the second emission region.

63. The optoelectronic device of claim 62, wherein the first capping layer is disposed on an exposed layer surface of the metal coating in the first emission region.

64. The optoelectronic device of claim 61, wherein the conductive coating extends between the metal coating and the first capping layer in the first emitting region.

65. The optoelectronic device of claim 61, wherein the metallic coating comprises a metallic coating material.

66. The optoelectronic device of claim 65, wherein the metallic coating material comprises a metal having a bond dissociation energy in a diatomic molecule of at least 10 kJ / mol at 298 K.

67. The optoelectronic device of claim 65, wherein the metallic coating material comprises an element having an electronegativity less than 1.

4.

68. The optoelectronic device of claim 65, wherein the metal coating material comprises an element selected from the group consisting of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combination of any of these elements.

69. The optoelectronic device of claim 68, wherein the element is selected from Cu, Ag, Au, and any combination of any of these elements.

70. The optoelectronic device of claim 68, wherein the element is Cu.

71. The optoelectronic device of claim 68, wherein the element is Al.

72. The optoelectronic device of claim 68, wherein the element is selected from the group consisting of Mg, Zn, Cd, Yb, and any combination of any of these elements.

73. The optoelectronic device of claim 68, wherein the element is selected from Sn, Ni, Ti, Pd, Cr, Fe, Co, and any combination of any of these elements.

74. The optoelectronic device of claim 68, wherein the element is selected from the group consisting of Zr, Pt, V, Nb, Ir, Os, and any combination of any of these elements.

75. The optoelectronic device of claim 68, wherein the element is selected from Ta, Mo, W, and any combination of any of these elements.

76. The optoelectronic device of claim 68, wherein the element is selected from the group consisting of Mg, Ag, Al, Yb, Li, and any combination of any of these elements.

77. The optoelectronic device of claim 68, wherein the element is selected from Mg, Ag, Yb, and any combination of any of these elements.

78. The optoelectronic device of claim 68, wherein the element is selected from Mg, Ag, and any combination of any of these elements.

79. The optoelectronic device of claim 68, wherein the element is Ag.

80. The optoelectronic device of claim 65, wherein the metallic coating material comprises a pure metal.

81. The optoelectronic device of claim 80, wherein the pure metal is at least one of pure silver (Ag) and substantially pure Ag.

82. The optoelectronic device of claim 80, wherein the pure metal is at least one of pure magnesium (Mg) and substantially pure Mg.

83. The optoelectronic device of claim 80, wherein the pure metal is at least one of pure aluminum (Al) and substantially pure Al.

84. The optoelectronic device of claim 66, wherein the metallic coating material comprises an alloy.

85. The optoelectronic device of claim 84, wherein the alloy is a silver (Ag)-containing alloy.

86. The optoelectronic device of claim 65, wherein the metal coating material comprises oxygen (O).

87. The optoelectronic device of claim 86, wherein the metallic coating material comprises O and at least one metal.

88. The optoelectronic device of claim 86, wherein the metal coating material comprises a metal oxide.

89. The optoelectronic device of claim 88, wherein the metal oxide comprises zinc (Zn), indium (In), tin (Sn), antimony (Sb), gallium (Ga), and any combination of any of these metal oxides.

90. The optoelectronic device of claim 89, wherein the metal oxide is a transparent conductive oxide (TCO).

91. The optoelectronic device of claim 90, wherein the TCO is at least one of the following and any combination of any of these TCOs: indium titanium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO).

92. The optoelectronic device of claim 65, wherein the metallic coating comprises a plurality of layers of the metallic coating material.

93. The optoelectronic device of claim 92, wherein the metallic coating material of a first layer of the plurality of layers is different from the metallic coating material of a second layer of the plurality of layers.

94. The optoelectronic device of claim 92, wherein the metallic coating material of at least one of the plurality of layers comprises ytterbium (Yb).

95. The optoelectronic device of claim 94, wherein the metal coating material of another layer of the plurality of layers comprises an alloy containing silver (Ag).

96. The optoelectronic device of claim 95, wherein the metal coating material of another layer of the plurality of layers comprises at least one of pure silver (Ag), substantially pure Ag, pure magnesium (Mg), substantially pure Mg, and any combination of any of these metal coating materials.

97. The optoelectronic device of claim 95, wherein the metal coating material of one of the plurality of layers comprises an element selected from the group consisting of silver (Ag), gold (Au), copper (Cu), aluminum (Al), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combination of any of these elements.

98. The optoelectronic device of claim 97, wherein the element is selected from Cu, Ag, Au, and any combination of any of these elements.

99. The optoelectronic device of claim 97, wherein the element is Cu.

100. The optoelectronic device of claim 97, wherein the element is Al.

101. The optoelectronic device of claim 97, wherein the element is selected from Sn, Ti, Pd, Cr, Fe, Co, and any combination of any of these elements.

102. The optoelectronic device of claim 97, wherein the element is selected from the group consisting of Ni, Zr, Pt, V, Nb, Ir, Os, and any combination of any of these elements.

103. The optoelectronic device of claim 97, wherein the element is selected from Ta, Mo, W, and any combination of any of these elements.

104. The optoelectronic device of claim 97, wherein the element is selected from the group consisting of Mg, Ag, Al, and any combination of any of these elements.

105. The optoelectronic device of claim 97, wherein the element is selected from Mg, Ag, and any combination of any of these elements.

106. The optoelectronic device of claim 97, wherein the element is Ag.

107. The optoelectronic device of claim 92, wherein at least one of the plurality of layers comprises a metal having a work function less than 4 eV.

108. The optoelectronic device of claim 61, wherein the conductive coating comprises a conductive coating material.

109. The optoelectronic device of claim 108, wherein the conductive coating material comprises a metal having a bond dissociation energy in a diatomic molecule of less than 300 kJ / mol at 298 K.

110. The optoelectronic device of claim 108, wherein the conductive coating material comprises an element selected from the group consisting of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), yttrium (Y), and any combination of any of these elements.

111. The optoelectronic device of claim 110, wherein the element is selected from K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, and any combination of any of these elements.

112. The optoelectronic device of claim 110, wherein the element is selected from the group consisting of Cu, Ag, Au, and any combination of any of these elements.

113. The optoelectronic device of claim 110, wherein the element is Cu.

114. The optoelectronic device of claim 110, wherein the element is Al.

115. The optoelectronic device of claim 110, wherein the element is selected from the group consisting of Mg, Zn, Cd, Yb, and any combination of any of these elements.

116. The optoelectronic device of claim 110, wherein the element is selected from Mg, Ag, Al, Yb, Li, and any combination of any of these elements.

117. The optoelectronic device of claim 110, wherein the element is selected from the group consisting of Mg, Ag, Yb, and any combination of any of these elements.

118. The optoelectronic device of claim 110, wherein the element is selected from Mg, Ag, and any combination of any of these elements.

119. The optoelectronic device of claim 110, wherein the element is Ag.

120. The optoelectronic device of claim 108, wherein the conductive coating material comprises a pure metal.

121. The optoelectronic device of claim 120, wherein the pure metal is at least one of pure silver (Ag) and substantially pure Ag.

122. The optoelectronic device of claim 121, wherein the substantially pure Ag has a purity of at least 95%.

123. The optoelectronic device of claim 120, wherein the pure metal is at least one of pure magnesium (Mg) and substantially pure Mg.

124. The optoelectronic device of claim 123, wherein the substantially pure Mg has a purity of at least 95%.

125. The optoelectronic device of claim 108, wherein the conductive coating material comprises an alloy. The optoelectronic device of claim 125 , wherein the alloy is an alloy containing silver (Ag) or an alloy containing magnesium (Mg).

127. The optoelectronic device of claim 108, wherein the conductive coating material comprises a non-metallic element.

128. The optoelectronic device of claim 127, wherein the non-metallic element is selected from at least one of oxygen (O), sulfur (S), nitrogen (N), carbon (C), and any combination of any of these elements.

129. The optoelectronic device of claim 127, wherein the concentration of the non-metallic element in the conductive coating material is less than 1%.

130. The optoelectronic device of claim 49, further comprising a semiconductive layer, wherein the at least one electrode coating extends between the semiconductive layer and the first cover layer in the first emission region and between the semiconductive layer and the second cover layer in the second emission region.

131. The optoelectronic device of claim 49, wherein the second capping layer is disposed in the first emission region.

132. The optoelectronic device of claim 131, wherein the first capping layer extends between the at least one electrode coating in the first emission region and the second capping layer.

133. The optoelectronic device of claim 131, wherein the second capping layer extends between the at least one electrode coating in the first emission region and the first capping layer.

134. The optoelectronic device of claim 49, wherein the first capping layer is disposed in the second emission region.

135. The optoelectronic device of claim 134, wherein the first capping layer extends between the at least one electrode coating and the second capping layer in the second emission region.

136. The optoelectronic device of claim 134, wherein the second capping layer extends between the at least one electrode coating and the first capping layer in the second emission region.

137. The optoelectronic device of claim 1 , further comprising a third capping layer comprising a third capping layer material and disposed in a third emission region, the third emission region configured to emit photons having a third wavelength spectrum characterized by a third starting wavelength through the third capping layer, the third starting wavelength being different from at least one of the first starting wavelength and the second starting wavelength; The third cover layer exhibits a third refractive index greater than 1.8 in at least one wavelength in the third wavelength spectrum.

138. The optoelectronic device of claim 137, wherein the third wavelength spectrum has a third peak wavelength that is shorter than the second peak wavelength of the second wavelength spectrum and longer than the first peak wavelength of the first wavelength spectrum; the third covering layer is NIC for patterned conductive coating, wherein The exposed surface of the third covering layer lacks the closed film of the conductive coating.

139. The optoelectronic device of claim 137, wherein at least one of the first cover layer and the second cover layer is disposed in the third emission region.

140. The optoelectronic device of claim 137, wherein at least one of the third cladding layer and the third cladding layer material exhibits a third absorption edge at a third absorption edge wavelength that is shorter than the third onset wavelength.

141. The optoelectronic device of claim 140, wherein the third absorption edge is characterized by a third extinction wavelength at which an extinction coefficient of at least one of the third cladding layer and the third cladding layer material is equal to a threshold.

142. The optoelectronic device of claim 140, wherein the third onset wavelength is less than 200 nm longer than the third absorption edge wavelength.

143. The optoelectronic device of claim 141, wherein the third extinction wavelength is the longest wavelength of at least one wavelength at which the extinction coefficient of at least one of the third capping layer and the third capping layer material is equal to the threshold.

144. The optoelectronic device of claim 141, wherein a first derivative of the extinction coefficient of at least one of the third cladding layer and the third cladding layer material as a function of wavelength is negative at the third extinction wavelength.

145. The optoelectronic device of claim 141, wherein the extinction coefficient of at least one of the third capping layer and the third capping layer material is less than the threshold value at wavelengths longer than the third extinction wavelength.

146. The optoelectronic device of claim 141, wherein the extinction coefficient of at least one of the third capping layer and the third capping layer material is less than the threshold value at all wavelengths longer than the third extinction wavelength.

147. The optoelectronic device of claim 141, wherein the extinction coefficient of at least one of the third cladding layer and the third cladding layer material is less than 0.1 at any wavelength longer than the third onset wavelength.

148. The optoelectronic device of claim 141, wherein the extinction coefficient of at least one of the third cladding layer and the third cladding layer material exceeds 0.1 at wavelengths shorter than the first absorption edge wavelength.

149. An optoelectronic device according to claim 141, wherein the refractive index of at least one of the third covering layer and the third covering layer material for at least one wavelength longer than the third absorption edge wavelength exceeds the refractive index of at least one of the third covering layer and the third covering layer material for at least one wavelength shorter than the first absorption edge wavelength.

150. The optoelectronic device of claim 137, wherein the third emission region is substantially devoid of at least one of the first and second capping layers.

151. The optoelectronic device of claim 84, wherein the alloy is a silver-magnesium (AgMg) containing alloy.

152. The optoelectronic device of claim 94, wherein the metallic coating material of another layer of the plurality of layers comprises an alloy containing silver-magnesium (AgMg).

153. The optoelectronic device of claim 125, wherein the alloy is an alloy containing AgMg.

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