Polishing pad, and method for manufacturing a polishing processed article

By using dynamic viscoelastic matching between the abrasive layer and the buffer layer of the abrasive pad, the problem of insufficient flatness in the prior art is solved, resulting in better abrasive effect and reduced pitting and erosion.

CN116348245BActive Publication Date: 2026-07-14FUJIBO HLDG
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Patent Information

Application Number
CN202180065924.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-09-30
Filing Date
2021-09-27
Publication Date
2026-07-14
Estimated Expiration
2041-09-27

AI Technical Summary

Technical Problem

Existing polishing pads are insufficient in improving the flatness of the workpiece, especially in the polishing of semiconductor devices, where pitting and erosion are difficult to control effectively.

Method used

The abrasive pad consists of an abrasive layer and a buffer layer. The storage modulus ratio and loss factor in the dynamic viscoelasticity test are within a specific range to ensure the property matching of the abrasive layer and the buffer layer and to meet certain dynamic viscoelastic conditions.

Benefits of technology

By optimizing the physical property matching of the grinding layer and the buffer layer, the flatness of the workpiece is improved, dents and erosion are reduced, and the grinding effect is enhanced.

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Abstract

The present application relates to a polishing pad having a polishing layer and a cushion layer, wherein the ratio E' (40°C) / E' (40°C) of the storage modulus E' (40°C) at 40°C in a dynamic viscoelasticity measurement under a bending mode condition at a frequency of 10 rad / s and at a temperature of 20 to 100°C in a dry state B40 the storage modulus E' (40°C) at 40°C in a dynamic viscoelasticity measurement under a compression mode condition at a frequency of 10 rad / s and at a temperature of 20 to 100°C in a dry state C40 B40 C40 is 3.0 or more and 15.0 or less, and the loss factor tan δ in the dynamic viscoelasticity measurement under the aforementioned bending mode condition is 0.10 or more and 0.30 or less in a range of 40°C or more and 70°C or less.​​
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Citation Information

Patent Citations

  • Polishing pads for chemical mechanical planarization

    JP2004507076A

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  • Polishing pad, polishing method using polishing pad, method for using said polishing pad

    CN108349061A

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    JP2009034770A