Second harmonic generation device and method based on dual topological angular states

By leveraging the nonlinear interaction between the inner and outer topological photonic crystal structures and the topological angular states, the structural complexity and fabrication errors associated with second harmonic generation in existing technologies have been addressed, resulting in efficient and robust second harmonic conversion.

CN116382013BActive Publication Date: 2026-07-14SOUTH CHINA UNIV OF TECH
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Patent Information

Application Number
CN202310248551.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-03-15
Publication Date
2026-07-14
Estimated Expiration
2043-03-15

AI Technical Summary

Technical Problem

Existing second harmonic generation technologies in microcavities suffer from problems such as complex structure, difficulty in frequency matching, significant impact of processing errors, and low conversion efficiency. In particular, devices based on traditional photonic crystal microcavities are easily affected by processing defects.

Method used

By employing an inner and outer layer topological photonic crystal structure and utilizing the nonlinear interaction of topological angular states, a high-Q photonic crystal microcavity with frequency matching conditions is designed. Efficient second harmonic generation is achieved by adjusting the radius of the dielectric pillars and the cell structure, and is topologically protected.

Benefits of technology

It achieves efficient second harmonic generation with simple structure and easy integration, has high Q value and robustness, can resist the influence of processing defects, and significantly improves conversion efficiency.

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Abstract

The application discloses a kind of based on double topological corner state second harmonic generation device and method, with same energy band structure but opposite inner layer topological photonic crystal and outer layer topological photonic crystal of bulk polarization composition for second harmonic generation topological photonic crystal structure.It is equilateral triangle in the region boundary of inner layer topological photonic crystal and outer layer topological photonic crystal, under nearest neighbor interaction and long-range interaction, high Q value I type topological corner state and II type topological corner state appear near the three vertices of equilateral triangle region, and make the intrinsic frequency of II type topological corner state be twice the intrinsic frequency of I type corner state.When the light power density irradiated on inner layer topological photonic crystal reaches and exceeds second harmonic generation threshold, nonlinear interaction will occur between I type corner state and II type corner state, so that the second harmonic mode corresponding to II type corner state is excited out, realizes high-efficiency second harmonic generation, and is topologically protected, has certain anti-interference to defect.
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