Cross-shaped high-temperature three-dimensional hall sensor and preparation method thereof

Abstract

Cross type high temperature three-dimensional Hall sensor and preparation method thereof belong to the technical field of semiconductor devices. The technical scheme is that X column, Y column and Z column are all third generation semiconductor materials, X column, Y column and Z column are connected with each other perpendicularly in pairs, electrodes C1 and C2 are arranged at two ends of Z column, electrodes C3 and C4 are arranged on two sides of Y column, and electrodes C5 and C6 are arranged on two sides of X column. The beneficial effects are that the third generation semiconductor is used to make the sensor work in a high temperature environment, the new structure greatly reduces the volume compared with the traditional discrete device packaging combined Hall sensor, the sensor can work in a very small space, the performance of the new structure in each direction is consistent, which is beneficial to high temperature work and subsequent signal processing, and the high sensitivity Hall sensor made by the scheme is expected to be applied in various micro wearable, nuclear power station, medical, military, aerospace and other fields.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device technology, and particularly relates to a cross-shaped high-temperature three-dimensional Hall sensor and its fabrication method. Background Technology

[0002] Hall effect sensors are the most widely used and have the largest market share among magnetic sensors. They can be used to measure the magnitude of magnetic fields and other related physical quantities, such as displacement, flow rate, and rotational speed. Hall effect sensors have advantages such as high accuracy, low power consumption, low cost, and wide measurement range, and are widely used in various fields such as biomedicine, automotive electronics, aerospace, and industrial production. Traditional Hall effect sensors are mostly made of semiconductor silicon (Si) materials, or materials such as gallium arsenide (GaAs), indium telluride (InSb), and indium arsenide (InAs). However, due to the small bandgap and weak high-temperature resistance of these materials, they can only operate in environments below 150°C. In high-temperature environments, the scattering mechanism of these materials will severely affect the material performance, making the sensor unable to function properly. In contrast, applications such as current detection in downhole equipment and spacecraft require magnetic sensors that can operate normally at temperatures above 200°C. Third-generation semiconductor materials, such as gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO), and diamond, have high band gaps and strong high-temperature resistance. Hall sensors made of third-generation semiconductor materials can work normally and stably even in high-temperature environments of 400°C, which can meet the needs of measurement in harsh environments.

[0003] Hall effect sensors are mostly divided into two types: horizontal and vertical, which can detect the magnitude of magnetic fields perpendicular to or parallel to the sensor surface. A single device can meet some testing requirements, but many applications require three-dimensional magnetic field measurement, such as car navigation and human blood magnetic tag positioning. Currently, there are two main methods to achieve three-dimensional magnetic field measurement. The first method is to package a device measuring a single direction in the X, Y, and Z directions using packaging technology. This allows for three-dimensional magnetic field measurement. This method has consistent sensitivity in all three directions and relatively simple wiring, but requires more components, resulting in a larger sensor size and higher packaging precision requirements. The second method is to integrate a horizontal device and two vertical devices. This method is smaller and has higher integration density, but the wiring is complex and parameters such as sensitivity and temperature drift coefficient are inconsistent across the three directions.

[0004] Hall sensors made with existing technology are mainly made of materials such as Si, GaAs, InSb, and InAs, which cannot work properly in environments above 150°C. However, in many harsh environments such as nuclear power plants, underground mines, and space, when measuring magnetic fields or related quantities, the sensors need to operate at temperatures exceeding 200°C.

[0005] There are two main methods for measuring three-dimensional magnetic fields using Hall sensor technology. The first method involves packaging horizontal or vertical Hall sensors that measure magnetic fields in a single direction together. The disadvantages of this method are: 1) It requires at least three horizontal or vertical sensors to be packaged, which increases the manufacturing cost; 2) The packaging is difficult, the accuracy requirements are high, and there are many leads required; 3) Because at least three devices are required and they need to be arranged in three dimensions, the size of the sensor is large and it is not easy to reduce the size. However, many applications require extremely small sensor sizes, such as detecting magnetic tags in human blood vessels in medical diagnosis. The second method combines horizontal and vertical Hall sensors. The horizontal sensor measures the magnetic field perpendicular to the surface of the sensor, while the vertical sensor measures the two horizontal magnetic fields parallel to the surface of the sensor. This method partially solves the shortcomings of single-device packaging integration, but it also brings the following problems: 1) The electrodes of the integrated horizontal and vertical devices are all on the surface. The device is small in size but has many electrodes, so the wiring is more complicated; 2) Due to the larger short-circuit effect of the vertical device and the greater impact of structural asymmetry caused by the manufacturing process on the measurement results, the vertical device has a larger performance gap than the horizontal device. This results in a large difference in parameters such as sensitivity, temperature drift coefficient, and offset voltage when measuring in the three directions. The inconsistency in the performance changes of the three dimensions when the temperature rises makes high-temperature applications more difficult. The inconsistency in sensitivity and offset voltage requires additional processing of the measurement results during the testing process. Summary of the Invention

[0006] To address the issue that traditional semiconductor Hall sensors cannot operate in high-temperature environments above 150°C due to the inherent limitations of the materials themselves, this invention utilizes a Hall sensor made from third-generation semiconductor materials. Due to the wide bandgap of the material itself, this sensor can operate stably in high-temperature environments above 400°C.

[0007] To address the problems of large sensor size, complex wiring, high packaging difficulty, and inconsistent sensor performance parameters in the three directions caused by traditional horizontal and vertical Hall effect sensors in single or multiple integrated three-dimensional structures, this invention proposes a novel three-dimensional cross-shaped measurement structure that solves these problems. The advantages of this device are: 1) It is made using third-generation semiconductor materials, allowing stable operation in high-temperature environments above 400℃; 2) Utilizing a back electrode structure, the cross-shaped structure is integrated in three directions, enabling a single device to measure magnetic fields in all three directions, significantly reducing sensor size and allowing the sensor to operate in confined spaces; 3) It requires fewer electrodes; the three cross-shaped structures are integrated into one device, requiring only six electrodes to complete the three-dimensional magnetic field measurement, simplifying wiring; 4) The cross-shaped structure increases device sensitivity and facilitates electrode fabrication. The cross-shaped structure is a highly sensitive and low-offset voltage structure among single-directional measurement structures; integrating it into a three-dimensional structure similarly increases sensitivity and reduces offset voltage; 5) The measurement device structures in the three directions are essentially identical, resulting in consistent parameters such as device sensitivity, temperature drift coefficient, and offset voltage in all three directions, facilitating subsequent signal processing.

[0008] The technical solution is as follows:

[0009] A cross-shaped high-temperature three-dimensional Hall sensor includes: an X-column, a Y-column, a Z-column, electrodes C1, C2, C3, C4, C5, and C6. The X-column, Y-column, and Z-column are all made of third-generation semiconductor materials. The X-column, Y-column, and Z-column are connected perpendicularly to each other in pairs. Electrode C1 and electrode C2 are respectively disposed at both ends of the Z-column. Electrode C3 and electrode C4 are respectively disposed on both sides of the Y-column. Electrode C5 and electrode C6 are respectively disposed on both sides of the X-column.

[0010] Furthermore, the X-pillar, Y-pillar, and Z-pillar are integrally formed structures.

[0011] Furthermore, the third-generation semiconductor material is any one of gallium nitride, silicon carbide, zinc oxide, and diamond.

[0012] Furthermore, the magnetic field Bz perpendicular to the surface is detected through the cross-shaped structure of the plane containing electrodes C3, C4, C5, and C6. Electrodes C3 and C4 serve as excitation input terminals, with voltage or current input for excitation, and electrodes C5 and C6 detect the output potential difference signal; or electrodes C5 and C6 serve as excitation input terminals, with voltage or current input for excitation, and electrodes C3 and C4 detect the output potential difference signal.

[0013] Furthermore, when detecting the magnetic field in the horizontal direction, the magnitude of the magnetic field in the By direction is detected by electrodes C1, C2, C5, and C6. Electrodes C1 and C2 or C5 and C6 serve as excitation input terminals, and voltage or current excitation is input. The magnitude of the By magnetic field is measured by detecting the potential difference between electrodes C5 and C6 or C1 and C2.

[0014] Furthermore, the magnitude of the magnetic field in the Bx direction is detected by electrodes C1, C2, C3, and C4. Electrodes C1, C2, C3, and C4 serve as excitation input terminals, with voltage or current input for excitation. The magnitude of the Bx magnetic field is measured by detecting the potential difference between electrodes C3, C4, C1, and C2.

[0015] This invention also includes a method for fabricating a cross-shaped high-temperature three-dimensional Hall sensor, the steps of which are as follows:

[0016] S1. Material preparation: Prepare third-generation semiconductor materials, clean the materials, and remove impurities from the material surface using acetone, ethanol, deionized water, and hydrochloric acid.

[0017] S2. Structural Etching: After photolithography and development, the third-generation semiconductor material is etched using inductively coupled plasma etching equipment. Both sides are etched to the same depth to preserve the electron activity area.

[0018] S3. Device isolation: After photolithography and development, the device area is isolated by plasma etching or ion implantation;

[0019] S4. Electrode fabrication: After photolithography and development, composite metal is deposited using an electron beam evaporation system, and ohmic contacts are formed on the surface of the third-generation semiconductor material using a rapid thermal annealing process.

[0020] S5. Surface passivation: The device passivates by depositing a dielectric layer using any one of the following methods: electron beam evaporation, magnetron sputtering, plasma-enhanced chemical vapor deposition, or atomic layer deposition.

[0021] S6. Window opening: After photolithography and development, the passivation layer at the electrode is etched to open the window. Metal is deposited at the electrode using any one of magnetron sputtering, electron beam evaporation, or thermal evaporation to create pads and make leads.

[0022] Furthermore, in step S1:

[0023] Prepare SiC materials with an electron concentration of 1e15–1e18 cm⁻¹ -3，The material is hydrogen etched to flatten the surface, the substrate is cleaned using chemical methods, acetone, ethanol, and deionized water are used to remove organic matter from the substrate surface, hydrochloric acid is used to remove oxides and metals from the surface, it is then cleaned with deionized water and dried with high-purity nitrogen.

[0024] or

[0025] Prepare GaN materials with an electron concentration of 1e16–1e18 cm⁻¹ -3， The substrate is cleaned using chemical methods. Acetone, ethanol, and deionized water are used to remove organic matter from the substrate surface. Hydrochloric acid is used to remove oxides and metals from the surface. The substrate is then rinsed with deionized water and dried with high-purity nitrogen.

[0026] Furthermore, in step S4:

[0027] After photolithography and development, Ni / Ti / Al metal is first deposited on the SiC surface using an electron beam evaporation system, and then ohmic contacts are formed using a rapid annealing process in a nitrogen environment; a 2-5 μm margin is retained around the electrode.

[0028] or

[0029] After photolithography and development, Ti / Al metal is first deposited on the GaN surface using an electron beam evaporation system, and then ohmic contacts are formed using a rapid annealing process in a nitrogen environment; a 2-5 μm margin is left around the electrode.

[0030] Furthermore, in step S5:

[0031] A SiO2 passivation layer was deposited using plasma-enhanced chemical vapor deposition to reduce the influence of the ambient atmosphere on device characteristics.

[0032] or

[0033] A Si3N4 passivation layer was deposited using plasma-enhanced chemical vapor deposition to mitigate the impact of the ambient atmosphere on device characteristics.

[0034] The beneficial effects of this invention are:

[0035] The cross-shaped high-temperature three-dimensional Hall sensor and its fabrication method described in this invention have five main technical advantages: 1) It is made of third-generation semiconductor materials and can operate stably in high-temperature environments above 400℃; 2) By utilizing a back electrode structure, the cross-shaped structure is integrated in three directions, allowing a single device to measure magnetic fields in three directions, greatly reducing the sensor size and enabling the sensor to operate in confined spaces; 3) It requires fewer electrodes, with three cross-shaped structures integrated into one device, requiring only 6 electrodes to complete the three-dimensional magnetic field measurement, making the wiring simpler; 4) The cross-shaped structure increases the device sensitivity and facilitates electrode fabrication. The cross-shaped structure is a structure with high sensitivity and low offset voltage among single-direction measurement structures, and its integration into a three-dimensional structure also increases sensitivity and reduces offset voltage; 5) The measurement device structures in the three directions are basically consistent, so the device sensitivity, temperature drift coefficient, offset voltage, and other parameters in the three directions are also consistent, making subsequent signal processing more convenient.

[0036] The beneficial effects of this invention are twofold: firstly, it leverages the superior high-temperature performance of third-generation semiconductors, enabling the sensor to operate in high-temperature environments; secondly, it proposes a novel three-dimensional Hall sensor structure. This new structure significantly reduces the size compared to traditional discrete device-packaged Hall sensors, allowing the sensor to operate in extremely confined spaces. Compared to traditional horizontal and vertical integrated devices, the new structure proposed in this invention exhibits consistent performance in all directions, which is beneficial for high-temperature operation and subsequent signal processing. The high-sensitivity Hall sensor fabricated using this method is expected to be applied in various fields, including micro-wearable devices, nuclear power plants, medicine, military, and aerospace. Attached Figure Description

[0037] To more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and detailed embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0038] Figure 1 This is a schematic diagram of a novel three-dimensional cross-shaped high-temperature three-dimensional Hall sensor structure proposed in this invention;

[0039] Figure 2 This is a schematic diagram illustrating the working principle of a novel three-dimensional cross-shaped high-temperature three-dimensional Hall sensor proposed in this invention.

[0040] Figure 3 This is a schematic diagram of the process for implementing the present invention;

[0041] Figure 4(a) shows the relationship between Hall voltage and magnetic field strength of a novel three-dimensional cross-shaped high-temperature three-dimensional Hall sensor proposed in this invention.

[0042] Figure 4(b) shows the relationship between current-related sensitivity and magnetic field strength of a novel three-dimensional cross-shaped high-temperature three-dimensional Hall sensor proposed in this invention.

[0043] Figure 5 The figure shows the simulation results of the relationship between current-related sensitivity and temperature of a novel three-dimensional cross-shaped high-temperature three-dimensional Hall sensor proposed in this invention. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. The following description, in conjunction with the accompanying drawings... Figures 1-5 The cross-shaped high-temperature three-dimensional Hall sensor and its fabrication method are further explained.

[0045] This invention application proposes a novel cross-shaped high-temperature three-dimensional Hall sensor, fabricated using third-generation semiconductor materials, which can meet the requirements for use in high-temperature environments. This type of sensor can measure three-dimensional magnetic fields using a single device, is small in size, has low packaging difficulty, and the measurement structure is similar in the three directions, so the device performance is almost consistent in the three-dimensional directions. Moreover, the wiring is easy, combining the advantages of the two traditional methods in the prior art.

[0046] To achieve a small-sized three-dimensional Hall sensor with consistent performance across three dimensions, this invention proposes a novel three-dimensional cross-shaped Hall sensor structure that balances the requirements of small size and consistent performance across three dimensions. A schematic diagram of the device structure is shown below. Figure 1 As shown.

[0047] The device proposed in this invention application is made of third-generation semiconductor materials and has a cross-shaped shape when viewed from the front, side, and top. The shape of electrodes C1 to C6 is not specifically limited. The magnetic field Bz perpendicular to this surface is detected through the cross-shaped structure of the plane containing electrodes C3, C4, C5, and C6. Electrodes C3 and C4 are excitation input terminals, which can be excited by voltage or current. Electrodes C5 and C6 detect the output potential difference signal. Alternatively, C5 and C6 can be used as excitation input terminals, receiving voltage or current excitation, and the output potential difference signal is detected between electrodes C3 and C4. When detecting a horizontal magnetic field, electrodes C1, C2, C5, and C6 are used to detect the magnitude of the magnetic field in the By direction. C1 and C2 or C5 and C6 are excitation input terminals, receiving voltage or current excitation, and the magnitude of the By magnetic field is measured by detecting the potential difference between C5 and C6 or C1 and C2. Electrodes C1, C2, C3, and C4 are used to detect the magnitude of the magnetic field in the Bx direction. C1 and C2, or C3 and C4, are the excitation input terminals, receiving voltage or current excitation. The magnitude of the Bx magnetic field is measured by detecting the potential difference between C3 and C4, or C1 and C2. Using the above measurement method, the Hall sensor proposed in this invention can detect the magnitude of magnetic fields in three directions using a single device. All three directions have a cross-shaped structure, resulting in high sensitivity and low offset voltage. Furthermore, the sensitivity, temperature drift coefficient, and offset voltage are essentially consistent across the three directions when measuring the magnetic field.

[0048] Figure 2 This is a schematic diagram illustrating the working principle of a novel three-dimensional cross-shaped high-temperature three-dimensional Hall sensor proposed in this invention application. The input and output ports are interchangeable when measuring the magnetic field in the X, Y, and Z directions. Figure 2 One of the measurement methods is given.

[0049] The implementation process of the target device of this invention application is described as follows:

[0050] 1) Material preparation: Prepare third-generation semiconductor materials, clean the materials, and remove impurities from the material surface using acetone, ethanol, deionized water, hydrochloric acid, etc.

[0051] 2) Structural etching: After photolithography and development, the third-generation semiconductor material is etched using inductively coupled plasma etching (ICP) equipment. Both sides are etched to the same depth to preserve the electron activity area.

[0052] 3) Device isolation: After photolithography and development, the device area is isolated using plasma etching or ion implantation. 4) Electrode fabrication: After photolithography and development, composite metal is deposited using an electron beam evaporation system, and good ohmic contacts are formed on the surface of the third-generation semiconductor material using a rapid thermal annealing (RTA) process.

[0053] 5) Surface passivation: The dielectric layer is deposited using any one of the following methods for device passivation: electron beam evaporation (EB), magnetron sputtering, plasma-enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD). 6) Window opening: After photolithography and development, the passivation layer at the electrodes is etched to open windows. Metal is deposited at the electrodes using one of the following methods: magnetron sputtering, electron beam evaporation (EB), or thermal evaporation, to create pads and wires.

[0054] Figure 4 shows the relationship between Hall voltage, current-dependent sensitivity, and magnetic field when magnetic fields are applied in the X, Y, and Z directions at room temperature using the Hall sensor designed in this application. As shown in Figure 4(a), the Hall voltage obtained when magnetic fields are applied in the X, Y, and Z directions changes almost consistently with the magnetic field strength, with a maximum difference of less than 1% across the entire range. This demonstrates good consistency in the measurements across the three directions, facilitating subsequent data processing and the measurement of the three-dimensional magnetic field. Figure 4(b) shows that the current-dependent sensitivity is basically consistent across the three directions, at 129.8 V / AT, 130.4 V / AT, and 129.4 V / AT, respectively.

[0055] Figure 5 The relationship between the current-dependent sensitivity and temperature of the Hall sensor designed in this application of the present invention when magnetic fields are applied in the X, Y, and Z directions is given. It can be seen that the temperature drift coefficients in the three directions are small and basically consistent, which are 27.4ppm / K, 31.2ppm / K, and 30.3ppm / K, respectively. This indicates that the test performance of the sensor designed in this invention is consistent in the three directions at high temperatures, which is beneficial for the measurement of three-dimensional magnetic fields under high temperature conditions.

[0056] The key technical aspects of this invention lie in the improved performance and innovative structure of the three-dimensional Hall sensor device. Utilizing a novel three-dimensional cross-shaped structure, the size of the three-dimensional Hall sensor is significantly reduced while ensuring consistent performance and high sensitivity in magnetic field measurements across the three directions. The use of third-generation semiconductor materials allows the sensor to operate in high-temperature environments. This design results in a simple sensor structure, good performance with consistent results in all directions, stable operation, and a simple fabrication process. This invention primarily protects the proposed device structure design and fabrication process.

[0057] This invention application provides two specific embodiments of the fabrication process for the target device, which are described below:

[0058] Example 1

[0059] 1) Material preparation: Prepare SiC material with an electron concentration of 1e15~1e18 cm⁻¹ -3The material is hydrogen-etched to smooth the surface, and the substrate is cleaned using chemical methods. Acetone, ethanol, and deionized water are used to remove organic matter from the substrate surface, hydrochloric acid is used to remove oxides and metals, followed by rinsing with deionized water and drying with high-purity nitrogen.

[0060] 2) Structural Etching: After coating and homogenizing the prepared sample, it is exposed under suitable light intensity and then developed. After exposure and development, hard etching is performed using inductively coupled plasma etching equipment to etch SiC, etching both sides to the same thickness, removing excess material while retaining the electron-active regions.

[0061] 3) Device isolation: After photolithography and development, an inductively coupled plasma device is used to etch a certain thickness outside the active area between devices to isolate the devices.

[0062] 4) Electrode fabrication: After photolithography and development, Ni (80nm) / Ti is deposited on the SiC surface using an electron beam evaporation system.

[0063] The (30nm) / Al (80nm) metal was then annealed at 950°C in a nitrogen atmosphere for 6 minutes using a rapid annealing (RTA) process to form ohmic contacts. The overlay accuracy of the two columnar electrodes in this step is crucial; in actual device fabrication, a 2–5 μm margin is maintained around the electrodes.

[0064] 5) Surface passivation: A 100nm thick SiO2 passivation layer is deposited at 300℃ using plasma-enhanced chemical vapor deposition (PECVD) to reduce the influence of the ambient atmosphere on device characteristics.

[0065] 6) Window opening: Etching the passivation layer at the electrode and opening the window lead wire. After the sample is developed by photolithography, ICP etching is used to etch the passivated electrode to form a window. Then, 500nm of Al is deposited at the electrode by magnetron sputtering. Finally, the lead wire is made to bring the electrode out.

[0066] Example 2

[0067] 1) Substrate preparation: Prepare GaN material with an electron concentration of 1e16~1e18 cm⁻¹ -3 The substrate was cleaned using chemical methods.

[0068] Use acetone, ethanol, and deionized water to remove organic matter from the substrate surface, use hydrochloric acid to remove oxides and metals from the surface, then rinse with deionized water and dry with high-purity nitrogen.

[0069] 2) Mesa Etching: After coating and homogenizing the prepared sample, it is exposed to suitable light intensity, followed by development. After exposure and development, hardening is then performed using inductively coupled plasma etching equipment.

[0070] The GaN is etched using a Cl-based gas to the same depth on both sides, removing excess material while preserving regions of electron activity.

[0071] 3) Ion implantation: After photolithography and development, fluorine ions are implanted in non-device areas or inductively coupled plasma etching is performed to isolate the device.

[0072] 4) Electrode Fabrication: After photolithography and development, Ti (30nm) / Al (80nm) metal is deposited on the GaN surface using an electron beam evaporation system. Then, rapid annealing (RTA) is performed at 600℃ in a nitrogen atmosphere for 80 seconds to form ohmic contacts. The overlay accuracy of the two columnar electrodes is crucial in this step; in actual device fabrication, a 2–5 μm margin is maintained around the electrodes.

[0073] 5) Surface passivation: Deposition was performed using plasma-enhanced chemical vapor deposition (PECVD) at 300°C.

[0074] A 100nm thick Si3N4 passivation layer reduces the impact of the ambient atmosphere on device characteristics.

[0075] 6) Window opening: Etching the passivation layer at the electrode and opening the window lead wire. After the sample is developed by photolithography, ICP etching is used to etch the passivated electrode to form a window. Then, 500nm of Al is deposited at the electrode by magnetron sputtering. Finally, the lead wire is made to bring the electrode out.

[0076] The above description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention. The technical solution of the present invention uses third-generation wide-bandgap semiconductor materials, but can also be extended to other silicon, indium telluride, gallium arsenide, gallium oxide, scandium aluminum nitride, and boron nitride semiconductors. Within the scope of device structures similar to this solution, all should be covered within the scope of protection of the present invention.

Claims

1. A cross-shaped high-temperature three-dimensional Hall sensor, characterized in that, include: X-pillar, Y-pillar, Z-pillar, electrode C1, electrode C2, electrode C3, electrode C4, electrode C5, and electrode C6. The X-pillar, Y-pillar, and Z-pillar are all made of third-generation semiconductor materials. The X-pillar, Y-pillar, and Z-pillar are connected perpendicularly to each other in pairs. Electrode C1 and electrode C2 are respectively disposed at both ends of the Z-pillar. Electrode C3 and electrode C4 are respectively disposed on both sides of the Y-pillar. Electrode C5 and electrode C6 are respectively disposed on both sides of the X-pillar.

2. The cross-shaped high-temperature three-dimensional Hall sensor as described in claim 1, characterized in that, The X-column, Y-column, and Z-column are integrally molded structures.

3. The cross-shaped high-temperature three-dimensional Hall sensor as described in claim 1, characterized in that, The third-generation semiconductor material is any one of gallium nitride, silicon carbide, zinc oxide, and diamond.

4. The cross-shaped high-temperature three-dimensional Hall sensor as described in claim 1 or 2, characterized in that, The magnetic field Bz perpendicular to the surface is detected by the cross-shaped structure of the plane containing electrodes C3, C4, C5, and C6. Electrodes C3 and C4 serve as excitation input terminals, with input voltage or current excitation, and electrodes C5 and C6 detect the output potential difference signal. Alternatively, electrodes C5 and C6 can be used as excitation input terminals, with input voltage or current excitation, and the output potential difference signal can be detected between electrodes C3 and C4.

5. The cross-shaped high-temperature three-dimensional Hall sensor as described in claim 1 or 2, characterized in that, When detecting a magnetic field in the horizontal direction, the magnitude of the magnetic field in the By direction is detected by electrodes C1, C2, C5, and C6. Electrodes C1 and C2 or C5 and C6 are the excitation input terminals, and voltage or current excitation is input. The magnitude of the By magnetic field is measured by detecting the potential difference between electrodes C5 and C6 or C1 and C2.

6. The cross-shaped high-temperature three-dimensional Hall sensor as described in claim 1 or 2, characterized in that, The magnitude of the magnetic field in the direction of Bx is detected by electrodes C1, C2, C3, and C4. Electrodes C1, C2, C3, and C4 serve as excitation input terminals, with voltage or current input for excitation. The magnitude of the magnetic field in the direction of Bx is measured by detecting the potential difference between electrodes C3, C4, C1, and C2.

7. A method for fabricating a cross-shaped high-temperature three-dimensional Hall sensor as described in claim 1, characterized in that, The steps are as follows: S1. Material preparation: Prepare third-generation semiconductor materials, clean the materials, and remove impurities from the material surface using acetone, ethanol, deionized water, and hydrochloric acid. S2. Structural Etching: After photolithography and development, the third-generation semiconductor material is etched using inductively coupled plasma etching equipment. Both sides are etched to the same depth to preserve the electron activity area. S3. Device isolation: After photolithography and development, the device area is isolated by plasma etching or ion implantation; S4. Electrode fabrication: After photolithography and development, composite metal is deposited using an electron beam evaporation system, and ohmic contacts are formed on the surface of the third-generation semiconductor material using a rapid thermal annealing process. S5. Surface passivation: The device passivates by depositing a dielectric layer using any one of the following methods: electron beam evaporation, magnetron sputtering, plasma-enhanced chemical vapor deposition, or atomic layer deposition. S6. Window opening: After photolithography and development, the passivation layer at the electrode is etched to open the window. Metal is deposited at the electrode using any one of magnetron sputtering, electron beam evaporation, or thermal evaporation to create pads and make leads.

8. The method for fabricating a cross-shaped high-temperature three-dimensional Hall sensor as described in claim 7, characterized in that, In step S1: Prepare SiC material, electron density 1e15~1e18 cm -3， The surface of the material is planarized by hydrogen etching treatment, the substrate is cleaned by chemical method, and the organic matters on the surface of the substrate are removed by using acetone, ethanol and deionized water. The oxides and metals on the surface are removed by using hydrochloric acid, and then the substrate is cleaned by deionized water and dried by high-purity nitrogen. or Prepare GaN materials with an electron concentration of 1e16~1e18 cm⁻¹ -3， The substrate is cleaned using chemical methods. Acetone, ethanol, and deionized water are used to remove organic matter from the substrate surface. Hydrochloric acid is used to remove oxides and metals from the surface. The substrate is then rinsed with deionized water and dried with high-purity nitrogen.

9. The method for fabricating a cross-shaped high-temperature three-dimensional Hall sensor as described in claim 8, characterized in that, In step S4: After photolithography and development, Ni / Ti / Al metal is first deposited on the SiC surface using an electron beam evaporation system, and then ohmic contacts are formed using a rapid annealing process in a nitrogen environment; a 2-5 μm margin is retained around the electrode. or After photolithography and development, Ti / Al metal is deposited on the GaN surface using an electron beam evaporation system, followed by the formation of ohmic contacts using a rapid annealing process in a nitrogen environment; a 2-5 μm margin is left around the electrode.

10. The method for fabricating a cross-shaped high-temperature three-dimensional Hall sensor as described in claim 9, characterized in that, In step S5: A SiO2 passivation layer was deposited using plasma-enhanced chemical vapor deposition to reduce the influence of the ambient atmosphere on device characteristics. or A Si3N4 passivation layer was deposited using plasma-enhanced chemical vapor deposition to mitigate the impact of the ambient atmosphere on device characteristics.

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