An ion beam processing apparatus and method

Abstract

This invention proposes an ion beam processing apparatus and method, specifically relating to the field of optical processing technology. The ion beam processing apparatus includes a processing platform, wherein a vacuum motion mechanism is fixed on one side of the processing platform, and a workpiece is fixed on the other side. A screen is fixed on one side of the vacuum motion mechanism, facing the workpiece. The screen is used to emit stripes. The ion beam processing apparatus provided by this invention emits stripes through the screen and monitors the first removal distribution of the processed material in real time through the stripe reflection method. The center of the ion beam can be directly determined through the stripe reflection method, and the dwell time can be determined by combining spatial coordinates. Finally, the first removal distribution and the second removal distribution are calculated to complete the ion beam processing and polishing, and the dwell time of the second round of processing is given. This can significantly improve the processing convergence efficiency and accuracy of ion beam polishing.

Description

Technical Field

[0001] This invention relates to the field of optical processing technology, and in particular to an ion beam processing apparatus and method. Background Technology

[0002] Ion beam polishing is a processing method that uses an ion beam with a certain energy and spatial distribution to bombard the surface of the workpiece to achieve precise material removal. Ion beam polishing has extremely high material removal accuracy, enabling precise material removal at the nanometer level. It can achieve non-contact material removal and has the characteristics of being applicable to a variety of materials, stress-free processing, no edge effect, large positioning tolerance, no copying efficiency, and having a rotationally symmetric Gaussian removal function. Therefore, it is often used in the final high-precision polishing stage of optical processing and has broad application prospects in precision instruments, space exploration, semiconductors and other fields.

[0003] For example, application number CN200810030958.X discloses a method for planning an ion beam polishing path, including the following steps: first, determining the removal function of the polishing process; then, determining the polishing path and processing points on the path based on the proposed spiral; next, calculating the dwell time density distribution during the polishing process based on the detected surface shape data distribution of the optical mirror to be polished and the ion beam polishing removal function; calculating the dwell time of each point on the polishing path based on the dwell time density distribution; and finally, performing ion beam polishing on the optical mirror to be polished based on the coordinates of each point on the polishing path and the dwell time of that point. This patent determines the removal function and then calculates the dwell time of each point on the path. Although this patent can shorten the processing time and improve the polishing accuracy, the removal function experiment is affected. Factors such as single-point dwell time, detection accuracy, and initial surface shape data of the optical mirror affect the measured removal function information, which can only approximately reflect the material removal distribution structure and cannot completely and accurately reflect the removal function information. Since the ion beam is a stream of particles without physical entities, it is difficult to obtain its center coordinates through direct measurement. Therefore, there is a positioning deviation between the spatial position coordinates of the workpiece and the center position coordinates of the removal function. Although the existing technology can obtain the spatial charge distribution of the ion beam by scanning the ion beam with a Faraday cup, the measurement accuracy of this method is easily affected by the aperture of the front section of the Faraday cup and electronic disturbances, resulting in limited position measurement accuracy. It can be seen that the existing ion polishing technology is prone to the situation where the center position of the removal function deviates from the workpiece coordinates, leading to a decrease in accuracy. Summary of the Invention

[0004] To address the problem of reduced accuracy caused by deviations between the center position of the removal function and the workpiece coordinates in existing ion polishing technologies, this invention proposes an ion beam processing apparatus and method.

[0005] This invention is achieved through the following technical solution:

[0006] This invention proposes an ion beam processing apparatus and method, wherein the ion beam processing apparatus includes a processing platform, wherein:

[0007] A vacuum motion mechanism is fixed on one side of the processing platform, and a workpiece is fixed on the other side. A screen is fixed on one side of the vacuum motion mechanism, facing the workpiece. The screen is used to emit stripes, which are used to calculate information about the workpiece. An ion source for emitting an ion beam is fixed on the side of the vacuum motion mechanism close to the workpiece, facing the workpiece. An optical mirror is also provided on the processing platform, and the optical mirror is fixed to the processing platform by a fixture. A camera is also fixed on the other side of the vacuum motion mechanism, and the camera is fixedly connected to the vacuum motion mechanism by an adjustment bracket, facing the workpiece.

[0008] An ion beam processing method, characterized by comprising the following steps:

[0009] S1. Obtain the workpiece surface shape data and the spatial coordinates of the workpiece on the machining platform;

[0010] S2. The removal function was determined through removal function experiments and the fringe reflection method;

[0011] S3. Obtain the machining dwell time based on the workpiece surface data, spatial coordinates, and removal function, and generate the motion system;

[0012] S4. Perform ion beam polishing and simultaneously obtain the first removal amount distribution during the ion beam polishing process using the stripe reflection method;

[0013] S5. Calculate the result of the second removal amount distribution based on the result of the first removal amount distribution;

[0014] S6. Repeat the ion beam polishing process until the workpiece meets the standards.

[0015] Furthermore, determining the removal function in step S2 includes the following steps:

[0016] Pre-set the operating parameters of the ion source;

[0017] The optical mirror is mounted onto the processing platform, and the optical mirror is subjected to single-point material removal.

[0018] The distribution of the third removal amount was measured using the stripe reflectance method.

[0019] The coordinates of the center position of the optical mirror are calculated;

[0020] The removal function is calculated and determined based on the third removal amount distribution and the center position coordinates.

[0021] Furthermore, acquiring the workpiece surface shape data and the workpiece's spatial coordinates on the machining platform includes the following steps:

[0022] The workpiece is subjected to interference detection;

[0023] Obtain the surface shape data;

[0024] The workpiece is mounted onto the processing platform;

[0025] Measure the surface center of the workpiece;

[0026] Calculate the spatial coordinates of the workpiece on the machining platform.

[0027] Furthermore, obtaining the first removal amount during the processing using the stripe reflection method includes the following steps:

[0028] Set the sampling frequency to within the preset frequency range;

[0029] Combine the dwell time with the grating ruler position reading;

[0030] The distribution of the first removal amount during the ion polishing process was calculated.

[0031] Furthermore, the step of calculating the second removal amount distribution result in step S5 includes:

[0032] Obtain the first removal amount distribution Rt(x, y) at a certain location, where x and y are the locations corresponding to that point;

[0033] Obtain the path L(x, y) of the ion beam within a preset frequency;

[0034] The first removal amount distribution Fi(x, y) of the path interval is calculated, wherein the expression of the first removal amount distribution is:

[0035] The second removal amount distribution result M1 is calculated based on the first removal amount distribution. M1 is the set of the first removal amount distributions at each position, where M1 = [F0(x, y)...;...;...Fi(x, y)].

[0036] Furthermore, the repeated ion beam processing until the workpiece meets the standards includes the following steps:

[0037] The second removal amount is obtained during the ion beam polishing process;

[0038] The distribution deviation ΔM is calculated based on the surface shape data and the second removal amount;

[0039] If the distribution deviation ΔM is greater than 5%, then the distribution deviation ΔM is used as the surface data for processing and steps S1 to S5 are repeated. If the distribution deviation ΔM is less than 5%, then it meets the standard.

[0040] Furthermore, the operating parameters of the ion source include ion energy, gas flow, radio frequency power, operating distance, and emission aperture.

[0041] The beneficial effects of this invention are:

[0042] The ion beam processing apparatus and method proposed in this invention can utilize the fringe reflection method to monitor the entire ion beam processing process in real time, reflecting the center point of the ion beam. By combining the center point of the ion beam with spatial coordinates and real-time material removal information, after the first round of ion beam polishing, the fringe reflection method is used to perform real-time online detection and monitoring of the material removal distribution throughout the ion beam polishing process. This allows for the real-time calculation of the actual material removal distribution after ion beam polishing. Simultaneously, the distribution deviation between the actual material removal distribution and the required material removal distribution of the workpiece detected by the surface shape is calculated, and the processing dwell time for the second round of processing can be quickly provided. This significantly improves the processing convergence efficiency and accuracy of ion beam polishing. Compared with existing technologies, this avoids the cumbersome operations of releasing the vacuum, removing optical components, and setting up a detection optical path for surface shape detection after one round of ion beam polishing. Attached Figure Description

[0043] Figure 1 This is a structural diagram of the ion beam processing apparatus of the present invention;

[0044] Figure 2 This is a flowchart of the ion beam processing method of the present invention;

[0045] Figure 3 This is a diagram showing the surface shape detection results of the ion beam processing method of the present invention;

[0046] Figure 4 This is a residence time distribution diagram of the ion beam processing method of the present invention;

[0047] Figure 5 This is a schematic diagram of the removal function of the ion beam processing method of the present invention;

[0048] In the diagram: 1. Processing platform; 2. Workpiece; 3. Optical mirror; 4. Ion source; 5. Screen; 6. Camera; 7. Vacuum motion mechanism.

[0049] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0050] To more clearly and completely illustrate the technical solution of the present invention, the present invention will be further described below with reference to the accompanying drawings.

[0051] Please refer to Figures 1-5 This invention proposes an ion beam processing apparatus and method. The ion beam processing apparatus includes a processing platform 1, wherein:

[0052] A vacuum motion mechanism 7 is fixed on one side of the processing platform 1, and a workpiece 2 is fixed on the other side. A screen 5 is fixed on one side of the vacuum motion mechanism 7, facing the workpiece 2. The screen 5 is used to emit stripes, which are used to calculate information about the workpiece 2. An ion source 4 for emitting an ion beam is fixed on the side of the vacuum motion mechanism 7 near the workpiece 2, and the ion source 4 faces the workpiece 2. An optical mirror 3 is also provided on the processing platform 1, and the optical mirror 3 is fixed on the processing platform 1 by tooling. A camera 6 is also fixed on the other side of the vacuum motion mechanism 7, and the camera 6 is fixedly connected to the vacuum motion mechanism 7 by an adjustment bracket, and the camera 6 faces the workpiece 2.

[0053] An ion beam processing method includes the following steps:

[0054] S1. Obtain the surface shape data of workpiece 2 and the spatial coordinates of workpiece 2 on machining platform 1;

[0055] S2. The removal function was determined through removal function experiments and the fringe reflection method;

[0056] S3. Obtain the machining dwell time based on the workpiece's two-sided shape data, spatial coordinates, and removal function, and generate the motion system;

[0057] S4. Perform ion beam polishing and simultaneously obtain the first removal amount distribution during the ion beam polishing process using the stripe reflection method;

[0058] S5. Calculate the result of the second removal amount distribution based on the result of the first removal amount distribution;

[0059] S6. Repeat the ion beam polishing process until workpiece 2 meets the standard.

[0060] In this embodiment:

[0061] Camera 6 is used to monitor the position and processing status of workpiece 2 in real time;

[0062] The adjustment bracket is used to adjust the shooting angle of camera 6;

[0063] The vacuum motion mechanism 7 is used to move the ion source 4 and the screen 5 to various positions of the workpiece 2.

[0064] Screen 5 is used to emit stripes to measure the surface and deformation of an object;

[0065] Ion source 4 is used to perform ion beam polishing.

[0066] Optical mirror 3 is used to assist in measuring the removal function of the ion beam;

[0067] The machining platform 1 is equipped with a mounting back plate, and the workpiece 2 is mounted onto the machining platform 1 through the machining back plate;

[0068] Specifically, the removal function refers to the actual material removal distribution per unit area when an ion beam resides at a single point. The fringe reflection method is a non-contact optical method for measuring the surface morphology and deformation of an object. It utilizes a light source and a grating to split the light into parallel beams that illuminate the surface of the object being measured. The morphology and deformation information of the object's surface are calculated by detecting changes in the interference fringes reflected by the grating. The fringe reflection method allows for high-precision morphology and deformation measurements without contacting the object's surface, enabling non-destructive testing. Surface shape data can be obtained using existing surface shape detection devices. The resulting workpiece surface shape data is shown below. Figure 3 As shown; the spatial coordinates of workpiece 2 represent the coordinates of workpiece 2 on the platform relative to the motion range of vacuum motion mechanism 7. For example, if the range of motion of ion source 4 in vacuum motion mechanism 7 is 5*5, then the spatial coordinates of workpiece 2 are the coordinates of workpiece 2 within the 5*5 range; the first removal amount represents the real-time material removal amount, that is, the amount of material removed from workpiece 2 by ion beam polishing at a certain position or at a certain moment; the second removal amount represents the actual material removal amount after one round of ion beam polishing, which can be understood as the collection of the amount of material removed from workpiece 2 at each position; during operation, the surface shape data of workpiece 2 is detected in advance and the coordinate position of workpiece 2 is measured, that is... Figure 1 The surface shape data reflects the material distribution of workpiece 2 to be removed during ion beam processing and polishing. The surface shape data and coordinate results are visually reflected. Then, the removal function of the ion beam under preset parameters is measured through optical mirror 3. The residence time distribution is obtained by combining the removal function, surface shape data, and spatial coordinates. Figure 3 Subsequently, according to Figure 3 Ion beam polishing is performed, and the real-time material removal distribution is monitored using a stripe reflection method. Based on the real-time material removal distribution results, calculations are performed to obtain the final actual material removal amount distribution. Finally, the distribution deviation is calculated based on the actual material removal amount and the removal amount detected by surface shape inspection. If the distribution deviation is greater than 5%, ion beam polishing is repeated until the distribution deviation is less than 5%. Because this invention uses real-time monitoring and online detection via stripe reflection, it can directly... Figure 3The real-time change in dwell time is calculated to obtain the center point of the ion source beam 4. By combining the center point of the ion beam with spatial coordinates and real-time material removal information, after the first round of ion beam polishing, the online detection and monitoring of the material removal distribution throughout the entire ion beam polishing process is performed in real time using the fringe reflection method. The actual material removal amount distribution after ion beam polishing can be calculated in real time. At the same time, the distribution deviation between the actual material removal distribution and the material distribution of the workpiece 2 to be removed detected by the surface shape is calculated, and the processing dwell time for the second round of processing can be quickly given. This can significantly improve the processing convergence efficiency and accuracy of ion beam polishing. Compared with the existing technology, it avoids the cumbersome operation of releasing vacuum, removing optical components, and setting up detection optical path for surface shape detection after one round of ion beam polishing.

[0069] Furthermore, determining the removal function in step S2 includes the following steps:

[0070] Pre-set the operating parameters of ion source 4;

[0071] The optical mirror 3 is mounted on the processing platform 1, and the optical mirror 3 is subjected to single-point material removal.

[0072] The distribution of the third removal amount was measured using the stripe reflectance method.

[0073] The center coordinates of optical mirror 3 were calculated.

[0074] The removal function is calculated and determined based on the third removal amount distribution and the coordinates of the center position.

[0075] In this embodiment:

[0076] The third removal amount is the actual material removal distribution obtained by ion beam polishing of optical mirror 3;

[0077] Specifically, the optical mirror 3 is mounted on a processing fixture. When it is necessary to perform a removal function experiment on the points on the optical mirror 3, the removal function is calculated by using the stripe reflection method and detecting the third removal amount of the optical mirror 3 under different ion beam polishing processing times. Based on the removal function, the height value that can be polished within the corresponding time of the ion beam is determined.

[0078] Furthermore, obtaining the surface shape data of workpiece 2 and the spatial coordinates of workpiece 2 on machining platform 1 includes the following steps:

[0079] Interference detection is performed on workpiece 2;

[0080] Obtain surface shape data;

[0081] Install workpiece 2 onto machining platform 1;

[0082] Measure the surface center of workpiece 2;

[0083] Calculate the spatial coordinates of workpiece 2 on machining platform 1.

[0084] In this embodiment:

[0085] Surface shape data is used to reflect the degree of unevenness and shape information of an object's surface;

[0086] Spatial coordinates are used to determine the location of bumps and depressions on the surface of an object;

[0087] For details, please refer to the appendix. Figure 3 Interference detection is performed on workpiece 2 to obtain surface shape error fringes and non-parallel fringes on the surface of workpiece 2, thereby reflecting the morphological information of the surface of the measured object and obtaining surface shape data. Surface shape data can reflect the degree of unevenness of the object surface, etc. By combining surface shape data with the removal function information of the ion beam, the processing dwell time of the ion beam at each point can be calculated. For example, if there are four points A, B, C, and D on workpiece 2, and workpiece 2 needs to be polished to the same height as point A, and the heights of points A, B, and C are all higher than point A, then ion beam processing is needed to process the heights of points A, B, and C to the same height as point D, thereby achieving the polishing effect. The information such as the height of points A, B, and C above point D is called surface shape data. By calculating and measuring the surface spatial coordinates of workpiece 2, and in conjunction with the removal function, the dwell time of the points can be calculated.

[0088] Furthermore, obtaining the first removal amount during the processing using the stripe reflection method includes the following steps:

[0089] Set the sampling frequency to within the preset frequency range;

[0090] Combine the dwell time with the grating ruler position reading;

[0091] The distribution of the first removal amount during the ion polishing process was calculated.

[0092] In this embodiment:

[0093] The position reading of the grating ruler is used to reflect the dwell time required for each point on the surface of workpiece 2.

[0094] For details, please refer to the appendix. Figure 3 To be continued Figure 4 , Figure 3 To remove the association between the function and spatial coordinates, i.e., the dwell time plot, Figure 4 To remove function information, Figure 3 The color of workpiece 2 represents the dwell time required for different positions of workpiece 2, which matches the grating reading on the right. Figure 4The bottom 't' and the left 'number' represent the height that the deionization beam can remove during operating time 't'. By combining the removal function, the grating ruler position reading, and the spatial coordinates, the dwell time of the ion beam on workpiece 2 can be calculated. Assuming point A is located at... Figure 3 The value displayed on the right is 300, which means that the ion beam needs to stay at point A for 300 milliseconds. Figure 4 In the removal function, the value corresponding to 300 milliseconds is 500, and A is the height at which ion beam polishing is required, which is 500mm. The dwell time of each point that needs to be processed and polished by ion beam is calculated in this way. The ion source 4 dwells at each coordinate on the workpiece 2 to complete the processing.

[0095] Furthermore, the step S5, which calculates the second removal distribution result, includes:

[0096] Obtain the first removal amount distribution Rt(x, y) at a certain location, where x and y are the locations corresponding to that point;

[0097] Obtain the path L(x, y) of the ion beam within a preset frequency;

[0098] The first removal amount distribution Fi(x, y) of the path interval is calculated, where the expression for the first removal amount distribution is:

[0099] The second removal amount distribution result M1 is calculated based on the first removal amount distribution. M1 is the set of the first removal amount distributions for each position, where M1 = [F0(x, y)...;...;...Fi(x, y)].

[0100] In this embodiment:

[0101] The first removal amount represents the amount of material removed from workpiece 2 in real time by ion beam polishing;

[0102] The second removal amount represents the amount of material actually removed from workpiece 2 after one round of ion beam polishing.

[0103] Specifically, the preset frequency of the ion beam can be set according to the actual situation. Assuming Rt(x, y) is the material removal distribution measured at a certain position, where x and y are the corresponding positions, when the sampling frequency of the fringe reflection method is 10 Hz, the processing time between the two measurement points is 0.1 s. During this time period, the material removal distribution generated by ion beam polishing on workpiece 2 is Rt(x, y). Rt(x, y) can be essentially understood as the convolution result of the processing path within 0.1 s. The path traversed by the ion beam polishing within 0.1 s is L(x, y). Finally, the material removal distribution Fi(x, y) generated within the path traversed in 0.1 s is calculated, where the expression is: The actual material removal distribution M1 obtained after ion beam polishing is the set of material removal distributions obtained by ion beam polishing within each 0.1s, i.e., M1 = [F0(x,y)...;...;...Fi(x,y)]. For example, the ion beam processed for a total of 1s, and the path traversed by the ion beam polishing within 1s is the sum of the paths traversed in 10 0.1s. The material removal distribution generated by the ion beam in the first 0.1s is R1(x,y), the material removal distribution generated by the ion beam in the second 0.1s is R2(x,y)......the material removal distribution generated by the ion beam in the tenth 0.1s is R10(x,y). The corresponding material removal distribution within the first 0.1s... The path L1(x, y) traversed by the ion beam polishing, the path L2(x, y) traversed by the ion beam polishing in the second 0.1s, ..., the path L10(x, y) traversed by the ion beam polishing in the tenth 0.1s, the material removal distribution F1(x, y) generated by the ion beam polishing in the first 0.1s, the material removal distribution F2(x, y) generated by the ion beam polishing in the second 0.1s, ..., the material removal distribution F10(x, y) generated by the ion beam polishing in the tenth 0.1s, then the actual material removal distribution on workpiece 2 during this round of ion beam polishing, i.e., within 10s, is M1 = [F1(x, y)...;...;...F10(x, y)].

[0104] Furthermore, repeating ion beam processing until workpiece 2 meets the standards includes the following steps:

[0105] To obtain the second removal amount during the ion beam polishing process;

[0106] The distribution deviation ΔM is calculated based on the surface shape data and the second removal amount.

[0107] If the distribution deviation ΔM is greater than 5%, then the distribution deviation ΔM is processed as surface data and steps S1 to S5 are repeated. If the distribution deviation ΔM is less than 5%, then it meets the standard.

[0108] In this embodiment:

[0109] The distribution deviation ΔM is used to reflect the difference between the surface shape data and the numerical value after ion beam processing and polishing;

[0110] Specifically, the distribution deviation can be understood as the theoretically required amount of material to be removed from workpiece 2 by ion beam polishing versus the actual amount of material removed. For example, on workpiece 2, there are four points A, B, C, and D. Points A, B, and C are respectively A1, B1, and C1 higher than point D. After one round of ion beam polishing, the heights of points A, B, C, and D on workpiece 2 are reduced by A2, B2, and C2 respectively relative to their original heights A1, B1, and C1. The set of A2, B2, and C2 represents the heights of points A, B, and C removed by the ion beam polishing. A1-A2, B1-B2, and C1-C2 represent the set of height values ​​of A, B, and C after polishing. Similarly, assuming A1, B1, and C1 represent the amount of material to be removed from workpiece 2 corresponding to A, B, and C in step S1 (surface shape detection), the sets of A2, B2, and C2 represent the heights of A, B, and C after one round of ion beam polishing. The actual amount of material removed from workpiece 2 at points B and C is represented by the set A1-A2, B1-B2, and C1-C2, which is the deviation before and after polishing. The percentage of A1-A2, B1-B2, and C1-C2 relative to the original A1, B1, and C1 is the distribution deviation. When the deviation is not less than 5%, A2, B2, and C2 are used as the surface shape detection in step S1 for the second round of ion beam polishing. The actual amount of material removed from workpiece 2 after the second round of ion beam polishing is A3, B3, and C3. The distribution deviation is calculated again: the percentage of A1-A2-A3, B1-B2-B3, and C1-C2-C3 relative to the original A1, B1, and C1. This process continues until the (X-1)th round of ion polishing, when the percentage of A1-A2…-AX, B1-B2…-BX, and C1-C2…-CX relative to the original C1, C2, and C3 is less than 5%, it is considered the standard for workpiece 2.

[0111] Furthermore, the operating parameters of ion source 4 include ion energy, gas flow, radio frequency power, operating distance, and emission aperture.

[0112] In this embodiment:

[0113] Ion source 4 is used to perform ion beam polishing.

[0114] Specifically, the ion energy is 1.5-5keV, the gas flow is 5-15sccm, the radio frequency power is 70-300W, the working distance is 30-150mm, and the emission aperture is 10-100mm. In actual implementation, the parameters of the ion source 4 can be selected according to the actual processing conditions.

[0115] Of course, the present invention may have many other embodiments. Based on this embodiment, other embodiments obtained by those skilled in the art without any creative effort are all within the scope of protection of the present invention.

Claims

1. An ion beam processing method, characterized by, The machining method is performed by an ion beam machining device, and the ion beam machining device comprises a machining platform, wherein: One side of the machining platform is fixed with a vacuum motion mechanism, and the other side is fixed with a workpiece. One side of the vacuum motion mechanism is fixed with a screen, and the screen is towards the workpiece. The screen is used to emit a stripe, and the stripe is used to calculate the information of the workpiece. The side close to the workpiece of the vacuum motion mechanism is fixed with an ion source for emitting an ion beam, and the ion source is towards the workpiece. An optical mirror is also arranged on the machining platform, and the optical mirror is fixed on the machining platform by a tool. The other side of the vacuum motion mechanism is also fixed with a camera, and the camera is fixedly connected with the vacuum motion mechanism through an adjusting frame, and the camera is towards the workpiece; The ion beam machining method comprises the following steps: S1. Obtain the surface shape data of the workpiece and the spatial coordinates of the workpiece on the machining platform; S2. Determine the removal function by removing function experiment and stripe reflection method; S3. Obtain the machining residence time according to the surface shape data of the workpiece, the spatial coordinates and the removal function, and generate a motion system; S4. Perform ion beam polishing machining, and obtain the first removal amount distribution in the ion beam polishing machining process by stripe reflection method; S5. Calculate the result of the second removal amount distribution by the result of the first removal amount distribution; S6. Repeat the ion beam polishing machining until the workpiece meets the standard; In the step S2, the removal function is determined by the following steps: presetting the working parameters of the ion source; installing the optical mirror on the machining platform and removing the single-point material of the optical mirror; measuring the third removal amount distribution by stripe reflection method; calculating the center position coordinates of the optical mirror; and calculating and determining the removal function according to the third removal amount distribution and the center position coordinates; The first removal amount in the machining process is obtained by stripe reflection method, which comprises the following steps: setting the sampling frequency to a preset frequency; combining the residence time with the grating ruler position reading; and calculating the first removal amount distribution in the ion polishing machining process; The second removal amount distribution result calculating step in the S5 step comprises: obtaining the first removal amount distribution Rt(x, y) of a certain position, wherein x and y are the positions corresponding to the point; obtaining the path L(x, y) of the ion beam within a preset frequency; and calculating the first removal amount distribution Fi(x, y) of the path interval, wherein the expression of the first removal amount distribution is: Fi(x, y)=Rt(x, y) L(x, y); and calculating the second removal amount distribution result M1 from the first removal amount distribution, wherein M1 is the first removal amount distribution set of each position, and M1=[F0(x, y);...;...; Fi(x, y)].

2. The ion beam processing method according to claim 1, wherein The surface shape data of the workpiece and the spatial coordinates of the workpiece on the machining platform are obtained by the following steps: Interferometric detection is performed on the workpiece; The surface shape data is obtained; The workpiece is installed on the machining platform; The surface center of the workpiece is measured; The spatial coordinates of the workpiece on the machining platform are calculated.

3. The ion beam process method of claim 1, wherein, The ion beam polishing machining is repeated until the workpiece meets the standard, which comprises the following steps: The second removal amount in the ion beam polishing machining process is obtained; The distribution deviation ΔM is calculated according to the surface shape data and the second removal amount; If the distribution deviation ΔM is greater than 5%, the distribution deviation ΔM is taken as the surface shape data for machining and the steps S1 to S5 are repeated. If the distribution deviation ΔM is less than 5%, it is considered to meet the standard.

4. The ion beam process method of claim 1, wherein, The working parameters of the ion source include ion energy, gas flow, radio frequency power, working distance and emission aperture.

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