Method for realizing temperature and area controllable laser annealing activation of SiC device by using carbon film with thickness selectivity

Abstract

This disclosure provides a method for temperature- and region-controllable laser annealing activation of SiC devices using a thickness-selective carbon film. The method includes: forming various ion-implanted regions of the target device on the surface of a SiC wafer using photolithography and high-energy ion implantation; cleaning the SiC wafer, spin-coating photoresist onto the surface of the SiC wafer, and developing it to complete the photoresist coverage of the ion-implanted regions; performing secondary photoresist coating and photolithography development on ion-implanted regions with different ion implantation depths and concentrations to cover different ion-implanted regions with photoresist of different thicknesses; thermally decomposing the carbonized photoresist to form a patterned carbon film with selective thickness on each ion-implanted region; irradiating the SiC wafer to perform pulsed laser annealing activation, causing the amorphous doped regions generated by ion implantation on the SiC wafer to recrystallize in a sub-melting state, repairing the lattice distortion caused by ion implantation, and activating the ions in the amorphous doped regions; and removing the carbon film from the surface of the SiC wafer after the activation process.

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