Film deposition quality analysis method and system based on CVD equipment

Abstract

The present invention discloses a film deposition quality analysis method and system based on a CVD device, and relates to the field of film deposition technology, including: installing an embedded camera in the CVD device, and rotating the camera based on the captured image; obtaining multiple gaseous reactants mixed when depositing a sample, and using a mixed analysis method based on the embedded camera to obtain a deposition thickness range and a co-generation mixing situation; after the CVD device starts to run and performs film deposition on the sample, the quality of the film deposition is judged based on the co-generation mixing situation; the present invention is used to solve the problem in the existing improvement of film quality detection that when the film parameters under standard conditions are basically consistent with the film parameters when several gaseous reactants are missing, the quality of the film cannot be effectively judged.

Description

Technical Field

[0001] The present invention relates to the field of film deposition technology, and in particular to a film deposition quality analysis method and system based on CVD equipment. Background Art

[0002] Film deposition is a common technique in materials science and surface engineering used to form one or more thin films on the surface of a substrate. This technique is widely used in various fields, including electronics, optics, and biomedicine, to improve the performance of materials or achieve specific functions. There are many methods for film deposition, including PVD and CVD. CVD is a technique for forming a thin film on the surface of a substrate through a chemical reaction.

[0003] Existing improvements in the analysis of film deposition quality usually analyze the film image, analyze the color of the pixels in the image and the uniformity of the pixels, and make a comprehensive judgment on the quality of the film based on the analysis results. Although this analysis method can judge the quality of the film from the image, in the process of film formation using multiple gaseous reactants, if the image of the film under the standard condition is basically the same as the image of the film without several gaseous reactants, the quality of the film cannot be judged only by judging the color and uniformity of the pixels in the image, resulting in problems caused by the quality judgment result not being consistent with the actual weight. For example, in the publication number CN1161 Patent application No. 30375A discloses a semiconductor thin film quality analysis method and system. The solution is to obtain an effective area in a thin film image and analyze the pixel values ​​of the analysis points in the effective area, and judge the quality of the thin film based on the analysis results. Other improvements for film deposition quality analysis usually use polarized light obtained by splitting the light beam and polarizer to judge the film quality. The above method still cannot effectively analyze and judge the quality of the film when the surface of the film under standard conditions is basically the same as the surface of the film without several gaseous reactants. In view of this, it is necessary to improve the existing film deposition quality analysis method. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems in the prior art to a certain extent. By proposing a film deposition quality analysis method and system based on CVD equipment, it is used to solve the problem that in the existing methods for detecting film deposition quality, when the film formation parameters under standard conditions are basically consistent with the film formation parameters when several gaseous reactants are missing, the quality of the film cannot be effectively judged.

[0005] To achieve the above objectives, in a first aspect, the present application provides a film deposition quality analysis method based on a CVD device, comprising the following steps:

[0006] An embedded camera is installed in the CVD device. When a sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image taken.

[0007] Before the CVD equipment starts to deposit a film on the sample, multiple gaseous reactants mixed during the deposition of the sample are obtained, and the deposition thickness range and co-generation mixing conditions are obtained using a mixed analysis method based on an embedded camera;

[0008] After the CVD equipment starts running and the sample is deposited into a film, the quality of the film deposition is judged based on the co-generation mixing situation.

[0009] Furthermore, an embedded camera is installed in the CVD device, and when the sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image taken, including:

[0010] When installing the embedded camera, the installation position of the embedded camera is a position in the CVD device that can horizontally shoot the sample, and the position of the embedded camera is fixed, and the shot image is adjusted by rotating the lens; when the sample is placed in the CVD device, the camera is used to shoot, and the shot image is recorded as a preliminary image; the preliminary image is gray-scaled, and the contour corresponding to the sample in the gray-scale preliminary image is obtained based on the binarization process, which is recorded as the preliminary sample contour, the longest line segment in the sample contour is recorded as the horizontal reference line segment, and the midpoint of the horizontal reference line segment is recorded as the reference midpoint, and a vertical line is drawn from the reference midpoint to the bottom edge of the preliminary image in the preliminary image, which is recorded as the reference vertical line.

[0011] Furthermore, an embedded camera is installed in the CVD device, and when the sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image taken, which also includes:

[0012] The acute angle between the reference vertical line and the horizontal reference line segment is recorded as the adjustment complementary angle; the reference midpoint is taken as the coordinate origin, the straight line where the reference vertical line is located is taken as the Y axis, and a plane rectangular coordinate system is made, which is recorded as the horizontal adjustment coordinate system; when the horizontal reference line segment is in the first quadrant and the third quadrant of the horizontal adjustment coordinate system, the rotation direction and the rotation angle of the embedded camera are set to counterclockwise and 90°-k° respectively; when the horizontal reference line segment is in the second quadrant and the fourth quadrant of the horizontal adjustment coordinate system, the rotation direction and the rotation angle of the embedded camera are set to clockwise and 90°-k° respectively, where k° is the adjustment complementary angle, and the direction corresponding to the rotation direction is from the camera to the sample;

[0013] The lens of the embedded camera is rotated based on the rotation direction and rotation angle of the embedded camera.

[0014] Furthermore, before the CVD device starts to deposit a film on the sample, obtaining a plurality of gaseous reactants mixed when depositing the sample includes:

[0015] Before the CVD equipment starts running, the multiple gaseous reactants mixed during the film deposition of the sample are recorded as gaseous reactants QF1 to gaseous reactants QF h ; Use the mixing analysis method to obtain the deposition thickness range and co-generation mixing ratio corresponding to the gaseous reactant QF;

[0016] The mixed analysis method includes: obtaining the gaseous reactant QF1 to the gaseous reactant QF h All the different combination types that can be combined are recorded as gas combination type QZ1 to gas combination type QZ n , where the number of gaseous reactants QF in any gaseous combination type QZ is less than or equal to h and greater than or equal to 2.

[0017] Furthermore, the hybrid analysis method based on the embedded camera is used to obtain the sediment thickness interval and the co-generation mixing situation, including:

[0018] Create a table with T rows and Y columns, which is called the mixed analysis table. The top row of the mixed analysis table, except for the first cell, is filled with gas combination types QZ1 to QZ from left to right. n , except for the first cell in the leftmost column of the mixing analysis table, fill in all the mixing ratios that the CVD equipment can mix for the gaseous reactants from top to bottom; the cells where the row where the mixing ratio is located in the mixing analysis table coincides with the column where the gaseous combination type QZ is located are recorded as mixing cells;

[0019] For any mixed cell in the mixed analysis table, the gas combination type QZ corresponding to the column where the mixed cell is located is recorded as the mixed type, and the mixing ratio corresponding to the row where the mixed cell is located is recorded as the combination ratio; the sample is placed in the CVD device, and all gaseous reactants QF of the mixed type are introduced into the CVD device in the combination ratio; when the film deposition process of the CVD device is completed and the sample is cooled, the embedded camera in the CVD device is used to shoot, and the obtained image is recorded as the interval analysis image; the interval analysis image is grayed, and the sample corresponding to the grayed interval analysis image is obtained based on the binarization and the preliminary sample contour. A horizontal reference line segment within the contour, and the contour where the horizontal reference line segment is located except the contour corresponding to the sample is recorded as the film contour; a plane rectangular coordinate system is established, recorded as the interval analysis coordinate system, wherein the units of the X-axis and the Y-axis of the interval analysis coordinate system are both micrometers; the horizontal reference line segment is overlapped with the X-axis, and the left end point of the horizontal reference line segment is overlapped with the coordinate origin, and based on the positional relationship between the film contour and the horizontal reference line segment, the film contour is drawn in the interval analysis coordinate system, wherein the film contour is in the fourth quadrant of the interval analysis coordinate system; the maximum and minimum values ​​of the absolute values ​​of the ordinates in the points corresponding to the film contour are obtained, recorded as BM respectively max and BM min , will [BM min , B.M. max ] is recorded as the deposition thickness interval corresponding to the mixed grid.

[0020] Furthermore, the hybrid analysis method based on the embedded camera is used to obtain the sediment thickness interval and the co-generation mixing situation, which also includes:

[0021] Obtain the sediment thickness intervals corresponding to all mixed cells in the mixed analysis table;

[0022] Obtain the thickness range of the film on the sample surface after the sample is deposited by CVD equipment under standard conditions, recorded as [BQ min , BQ max ], the maximum error between the actual thickness of the thin film on the surface of the sample and the ideal thickness after the sample is deposited by CVD equipment under standard conditions is recorded as the thickness error.

[0023] Furthermore, the hybrid analysis method based on the embedded camera is used to obtain the sediment thickness interval and the co-generation mixing situation, which also includes:

[0024] For any mixed grid, when the BM corresponding to the mixed grid min With BQ min The absolute value of the difference is less than or equal to the thickness error and the BM corresponding to the mixed grid max With BQ maxWhen the absolute value of the difference is less than or equal to the thickness error, the mixed grid is recorded as a co-generated mixed grid, and the mixing type corresponding to the mixed grid is recorded as a co-generated mixing situation; obtain all co-generated mixed grids and co-generated mixing situations in the mixing analysis table.

[0025] Furthermore, after the CVD equipment starts to operate and deposits a film on the sample, the quality judgment of the film deposition based on the co-generation mixing situation includes:

[0026] After the CVD equipment starts to deposit a film on the sample, when the process is completed and the thickness of the film is within the standard range, obtain the gaseous reactants QF1 to QF h Gas consumption, any gaseous reactant QF h1 The gas consumption is less than the gaseous reactant QF after film deposition by CVD equipment under standard conditions. h1 When the gas consumption is h1 Record it as the missing reactant; record all the gaseous reactants QF other than the missing reactants in the gaseous reactants QF as the reactants to be determined.

[0027] Furthermore, after the CVD equipment starts to operate and deposits a film on the sample, the quality judgment of the film deposition based on the co-generation mixing situation also includes:

[0028] When all gaseous reactants QF corresponding to the co-generation mixing situation of any co-generation mixing grid are reactants to be judged, the film deposition quality of the sample is recorded as low-quality film deposition;

[0029] When there is no missing reactant in the gaseous reactant QF, the film deposition quality of the sample is recorded as high-quality film deposition;

[0030] When there are missing reactants in the gaseous reactant QF and all gaseous reactant QFs corresponding to the co-generation mixing situation of the co-generation mixing grid are reactants to be judged, the film deposition quality of the sample is recorded as conventional mass film deposition.

[0031] In a second aspect, the present application also provides a film deposition quality analysis system based on a CVD device, including a lens correction module, a co-generation mixing acquisition module, and a quality judgment module;

[0032] The lens correction module is used to install an embedded camera in the CVD device. When the sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image taken.

[0033] The co-generation mixing acquisition module is used to obtain multiple gaseous reactants mixed when depositing the sample before the CVD equipment starts to deposit the film on the sample, and obtain the deposition thickness range and co-generation mixing situation using a mixed analysis method based on an embedded camera;

[0034] The quality judgment module is used to judge the quality of the film deposition based on the co-generation mixing situation after the CVD equipment starts to run and performs film deposition on the sample.

[0035] Beneficial effects of the present invention: the present invention first installs an embedded camera in the CVD equipment, and rotates the camera based on the captured image; obtains multiple gaseous reactants mixed when depositing the sample, and uses a mixed analysis method based on the embedded camera to obtain the deposition thickness range and the co-generation mixing situation. The advantage of this is that by installing an embedded rotatable camera, it is helpful to improve the overall analysis efficiency through regular image analysis in subsequent analysis, wherein the regular image analysis is achieved by the rotation of the camera; by obtaining the deposition thickness range and the co-generation mixing situation, the deposition thickness range corresponding to all combinations of gaseous reactants used for film deposition during film deposition can be obtained before film deposition is performed, which is conducive to effectively judging the quality of the film when the film formation parameters under the standard condition are basically consistent with the film formation parameters when several gaseous reactants are missing in the subsequent analysis;

[0036] The present invention also judges the quality of the film deposition based on the co-generation mixing situation after the CVD equipment starts running and the sample is deposited into a film. The advantage of this is that by judging the quality of the film deposition based on the co-generation mixing situation, it is possible to effectively judge the quality of the film by the co-generation mixing situation corresponding to all combinations of gaseous reactants on the basis of the existing quality judgment, when the film formation parameters under standard conditions are basically consistent with the film formation parameters when several gaseous reactants are missing. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is a functional block diagram of the system of the present invention;

[0038] Figure 2 is a flow chart of the steps of the method of the present invention;

[0039] Figure 3 is a schematic diagram of a preliminary image of the present invention and a preliminary image after the lens is rotated;

[0040] Figure 4 It is a schematic diagram for obtaining the deposition thickness interval;

[0041] Figure 5 It is a schematic structural diagram of the electronic device of the present invention. DETAILED DESCRIPTION

[0042] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] Example 1, please refer to Figure 1 As shown, the present application provides a film deposition quality analysis system based on a CVD device, including a lens correction module, a co-generation mixing acquisition module and a quality judgment module;

[0044] The lens correction module is used to install an embedded camera in the CVD device. When a sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image obtained by the picture.

[0045] The lens correction module includes a lens shooting correction unit, which is configured with a lens correction strategy. The lens correction strategy includes: when installing an embedded camera, the installation position of the embedded camera is a position in the CVD device where the sample can be horizontally photographed, and the position of the embedded camera is fixed, and the photographed image is adjusted by rotating the lens; when the sample is placed in the CVD device, the camera is used to shoot, and the photographed image is recorded as a preliminary image; the preliminary image is gray-scaled, and the contour corresponding to the sample in the gray-scale preliminary image is obtained based on the binarization process, which is recorded as the preliminary sample contour, the longest line segment in the sample contour is recorded as a horizontal reference line segment, and the midpoint of the horizontal reference line segment is recorded as a reference midpoint, and a vertical line is drawn from the reference midpoint to the bottom edge of the preliminary image in the preliminary image, which is recorded as a reference vertical line.

[0046] In the specific implementation process, in the actual installation process of the embedded camera, by installing it in the CVD equipment at a position where the sample can be photographed horizontally, the film formed on the surface of the sample in the CVD equipment can be effectively photographed, and the thickness of the film can be analyzed; in this embodiment, the purpose of rotating the camera lens is to rotate the image obtained by the shooting, so as to help directly overlap the image with the plane rectangular coordinate system in the subsequent analysis, thereby improving the overall analysis efficiency; for example, in a data analysis, the image obtained after the initial image is grayed and binarized can be referred to in FIG. Figure 3As shown, YX1 is a preliminary image after grayscale processing and binarization processing, XD1 is a horizontal reference line segment, XD2 is a reference vertical line, JD1 is an adjustment angle, and the degree of the adjustment angle is 50°. By establishing a horizontal adjustment coordinate system, it can be obtained that the horizontal reference line segment is in the second quadrant and the fourth quadrant of the horizontal adjustment coordinate system, then the rotation direction of the embedded camera is set to clockwise, and the rotation angle is set to 40°. Please refer to the image obtained after rotation as shown in YX2; in specific implementation, the purpose of rotating the camera lens is to keep the horizontal reference line segment horizontal, so as to help improve the overall analysis efficiency through regular image analysis in subsequent analysis; in the specific implementation process, binarization processing is an image processing technology, and the contour in the image is obtained by converting the pixel value of the image to 0 or 255. In this embodiment, the contour of the sample is obtained by converting the pixel value of the pixel point in the grayscale preliminary image to 0 or 255;

[0047] The acute angle between the reference vertical line and the horizontal reference line segment is recorded as the adjustment complementary angle; the reference midpoint is taken as the coordinate origin, the straight line where the reference vertical line is located is taken as the Y axis, and a plane rectangular coordinate system is made, which is recorded as the horizontal adjustment coordinate system; when the horizontal reference line segment is in the first quadrant and the third quadrant of the horizontal adjustment coordinate system, the rotation direction and the rotation angle of the embedded camera are set to counterclockwise and 90°-k° respectively; when the horizontal reference line segment is in the second quadrant and the fourth quadrant of the horizontal adjustment coordinate system, the rotation direction and the rotation angle of the embedded camera are set to clockwise and 90°-k° respectively, where k° is the adjustment complementary angle, and the direction corresponding to the rotation direction is from the camera to the sample;

[0048] The lens of the embedded camera is rotated based on the rotation direction and rotation angle of the embedded camera.

[0049] The co-genetic mixing acquisition module is used to obtain multiple gaseous reactants mixed during the deposition of samples before the CVD equipment starts to deposit films on the samples, and to obtain the deposition thickness range and co-genetic mixing conditions using a mixing analysis method based on an embedded camera.

[0050] The co-generation mixing acquisition module includes a gaseous mixing analysis unit, which is equipped with a gaseous mixing analysis strategy. The gaseous mixing analysis strategy includes: before the CVD device starts to operate, multiple gaseous reactants mixed during the film deposition of the sample are recorded as gaseous reactants QF1 to gaseous reactants QF h ; Use the mixing analysis method to obtain the deposition thickness range and co-generation mixing ratio corresponding to the gaseous reactant QF;

[0051] In the specific implementation process, for example, when a CVD device is actually used to form a diamond film, the gaseous reactants QF1 to QFh are hydrogen, methane, nitrogen and oxygen; then through analysis, we can get gas combination types QZ1 to QZ n They are: hydrogen and methane, hydrogen and nitrogen, hydrogen and oxygen, methane and nitrogen, methane and oxygen, nitrogen and oxygen, hydrogen, methane and nitrogen, hydrogen, nitrogen and oxygen, methane, nitrogen and oxygen, and hydrogen, methane, nitrogen and oxygen, and n is 10;

[0052] The mixed analysis method includes: obtaining the gaseous reactant QF1 to the gaseous reactant QF h All different combination types that can be combined are recorded as gas combination type QZ1 to gas combination type QZ n , where the number of gaseous reactants QF in any gaseous combination type QZ is less than or equal to h and greater than or equal to 2.

[0053] Create a table with T rows and Y columns, which is called the mixed analysis table. The top row of the mixed analysis table, except for the first cell, is filled with gas combination types QZ1 to QZ from left to right. n , except for the first cell in the leftmost column of the mixing analysis table, fill in all the mixing ratios that the CVD equipment can mix for the gaseous reactants from top to bottom; the cells where the row where the mixing ratio is located in the mixing analysis table coincides with the column where the gaseous combination type QZ is located are recorded as mixing cells;

[0054] In a specific implementation, for example, during a data acquisition, the CVD equipment can mix all the gaseous reactants in proportions of 30%, 60%, and 90%, respectively, and the gas combination types QZ1 to QZ n They are: hydrogen and methane, hydrogen and nitrogen, hydrogen and oxygen, methane and nitrogen, methane and oxygen, nitrogen and oxygen, hydrogen, methane and nitrogen, hydrogen, nitrogen and oxygen, methane, nitrogen and oxygen, and hydrogen, methane, nitrogen and oxygen; the obtained mixed analysis table is shown in Table 1: Diamond film table;

[0055] Table 1: Diamond film table

[0056] Hydrogen and methane Hydrogen and nitrogen Hydrogen and oxygen Methane and nitrogen Methane and oxygen Nitrogen and oxygen Hydrogen, methane and nitrogen Hydrogen, nitrogen and oxygen Methane, nitrogen and oxygen Hydrogen, methane, nitrogen and oxygen 30% (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) 60% (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) 90% (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form) (Mixed form)

[0057] Meanwhile, Table 1: Diamond film table corresponding to T and Y are 4 and 11 respectively;

[0058] For any mixed cell in the mixed analysis table, the gas combination type QZ corresponding to the column where the mixed cell is located is recorded as the mixed type, and the mixing ratio corresponding to the row where the mixed cell is located is recorded as the combination ratio; the sample is placed in the CVD device, and all gaseous reactants QF of the mixed type are introduced into the CVD device in the combination ratio; when the film deposition process of the CVD device is completed and the sample is cooled, the embedded camera in the CVD device is used to shoot, and the obtained image is recorded as the interval analysis image; the interval analysis image is grayed, and the sample corresponding to the grayed interval analysis image is obtained based on the binarization and the preliminary sample contour. A horizontal reference line segment within the contour, and the contour where the horizontal reference line segment is located except the contour corresponding to the sample is recorded as the film contour; a plane rectangular coordinate system is established, recorded as the interval analysis coordinate system, wherein the units of the X-axis and the Y-axis of the interval analysis coordinate system are both micrometers; the horizontal reference line segment is overlapped with the X-axis, and the left end point of the horizontal reference line segment is overlapped with the coordinate origin, and based on the positional relationship between the film contour and the horizontal reference line segment, the film contour is drawn in the interval analysis coordinate system, wherein the film contour is in the fourth quadrant of the interval analysis coordinate system; the maximum and minimum values ​​of the absolute values ​​of the ordinates in the points corresponding to the film contour are obtained, recorded as BM respectively max and BM min , will [BM min , B.M. max ] is recorded as the deposition thickness interval corresponding to the mixed grid.

[0059] Refer to the interval analysis coordinate system based on the mixing type and combination ratio corresponding to a mixed grid. Figure 4 As shown, the horizontal coordinate of point ZD1 is the length of the horizontal reference line segment, and the absolute value of the vertical coordinate corresponding to point ZD2 is BM min , the absolute value of the ordinate corresponding to point ZD3 is BM max , the contour corresponding to LK1 is the contour of the sample, and the curve corresponding to LK2 is the thin film contour; by obtaining the deposition thickness range, the thickness range of the thin film caused by the film formation that may occur when all gaseous reactants are mixed during film deposition can be obtained, which is conducive to the effective judgment of the film quality when the film thickness under standard conditions is basically consistent with the film thickness when several gaseous reactants are missing in subsequent analysis;

[0060] Obtain the sediment thickness intervals corresponding to all mixed cells in the mixed analysis table;

[0061] Obtain the thickness range of the film on the sample surface after the sample is deposited by CVD equipment under standard conditions, recorded as [BQ min , BQ max], the maximum error between the actual thickness of the thin film on the surface of the sample and the ideal thickness after the sample is deposited by CVD equipment under standard conditions is recorded as the thickness error, where the standard condition is the condition with correct parameters and operating procedures.

[0062] For example, in a deposition process of a diamond film, the obtained [BQ min , BQ max ] is [10.1 μm, 11 μm], and the maximum error between the actual thickness of the diamond film and the ideal thickness after the sample is deposited by CVD equipment under standard conditions is 1 μm; then for a mixed grid in actual analysis, the [BM min , B.M. max ] is [10 microns, 10.5 microns], then the BM corresponding to the mixed grid can be obtained by analysis min With BQ min When the absolute value of the difference is less than 1 micron and the absolute value of the difference between BMmax and BQmax corresponding to the mixed cell is less than 1 micron, the mixed cell is recorded as a co-generated mixed cell; when the mixed cell is recorded as a co-generated mixed cell, it means that when the mixed type and combination ratio corresponding to the mixed cell are deposited in the CVD equipment, the thickness of the film produced is basically consistent with the actual diamond film, which is easy to mislead the quality judgment;

[0063] For any mixed grid, when the BM corresponding to the mixed grid min With BQ min When the absolute value of the difference is less than or equal to the thickness error and the absolute value of the difference between BMmax and BQmax corresponding to the mixed cell is less than or equal to the thickness error, the mixed cell is recorded as a co-generated mixed cell, and the mixing type corresponding to the mixed cell is recorded as a co-generated mixing situation; obtain all co-generated mixed cells and co-generated mixing situations in the mixing analysis table.

[0064] The quality judgment module is used to judge the quality of the film deposition based on the co-generation mixing situation after the CVD equipment starts to run and performs film deposition on the sample.

[0065] The quality judgment module includes a film quality judgment unit, which is configured with a film quality judgment strategy. The film quality judgment strategy includes: after the CVD device starts to deposit a film on the sample, when the process is completed and the thickness of the film is within the standard range, obtaining gaseous reactants QF1 to gaseous reactants QF h Gas consumption, any gaseous reactant QF h1 The gas consumption is less than the gaseous reactant QF after film deposition by CVD equipment under standard conditions. h1 When the gas consumption is h1Record it as the missing reactant; record all the gaseous reactants QF other than the missing reactants in the gaseous reactants QF as the reactants to be determined.

[0066] In the film deposition process of a diamond film, the gaseous reactants QF are hydrogen, methane, nitrogen and oxygen; after the VD device starts to deposit the film on the sample and the process ends and the sample is cooled, the gas consumption of oxygen is less than the gas consumption of oxygen after the film deposition by the CVD device under the standard condition, then oxygen is recorded as the missing reactant; hydrogen, methane and nitrogen are recorded as the reactants to be determined; when there is a co-generation mixing grid with hydrogen and methane as the co-generation mixing situation, that is, all the gaseous reactants QF corresponding to the co-generation mixing situation of the co-generation mixing grid are the reactants to be determined, then because the generated diamond film may be a film generated only by the reaction of the introduced hydrogen and methane, which does not conform to the actual standard situation, the film deposition quality of the sample is recorded as low-quality film deposition;

[0067] When all gaseous reactants QF corresponding to the co-generation mixing situation of any co-generation mixing grid are reactants to be judged, the film deposition quality of the sample is recorded as low-quality film deposition;

[0068] When there is no missing reactant in the gaseous reactant QF, the film deposition quality of the sample is recorded as high-quality film deposition; when there is no missing reactant in the gaseous reactant QF, it means that all gaseous reactants QF are fully reacted and the corresponding film is formed, so the film deposition quality should be recorded as high-quality film deposition;

[0069] When there are missing reactants in the gaseous reactant QF and all the gaseous reactants QF corresponding to the co-generation mixing situation where there is no co-generation mixing grid are reactants to be judged, the film deposition quality of the sample is recorded as conventional quality film deposition; in the specific implementation process, when there are missing reactants in the gaseous reactant QF and all the gaseous reactants QF corresponding to the co-generation mixing situation where there is no co-generation mixing grid are reactants to be judged, it means that only part of the gaseous reactants are not completely reacted in this film deposition, but the generated film thickness is relatively standard. At this time, the quality of the film deposition is average, so the film deposition quality can be recorded as conventional quality film deposition.

[0070] Example 2, please refer to Figure 2 As shown, the present application also provides a film deposition quality analysis method based on a CVD device, comprising the following steps: Step S1, installing an embedded camera in the CVD device, when a sample is placed in the CVD device, using the camera to take a picture, and rotating the camera based on the image taken.

[0071] Step S1 includes: Step S101, when installing the embedded camera, the installation position of the embedded camera is a position in the CVD device that can horizontally shoot the sample, and the position of the embedded camera is fixed, and the shot image is adjusted by rotating the lens; when the sample is placed in the CVD device, the camera is used to shoot, and the shot picture is recorded as a preliminary image; the preliminary image is grayed, and the contour corresponding to the sample in the grayed preliminary image is obtained based on the binarization process, which is recorded as a preliminary sample contour, the longest line segment in the sample contour is recorded as a horizontal reference line segment, and the midpoint of the horizontal reference line segment is recorded as a reference midpoint, and a vertical line is drawn from the reference midpoint to the bottom edge of the preliminary image in the preliminary image, which is recorded as a reference vertical line.

[0072] Step S102, record the acute angle of the angle between the reference vertical line and the horizontal reference line segment as the adjustment residual angle; take the reference midpoint as the coordinate origin, the straight line where the reference vertical line is located as the Y axis, and make a plane rectangular coordinate system, which is recorded as the horizontal adjustment coordinate system; when the horizontal reference line segment is in the first quadrant and the third quadrant of the horizontal adjustment coordinate system, set the rotation direction and the rotation angle of the embedded camera to counterclockwise and 90°-k° respectively; when the horizontal reference line segment is in the second quadrant and the fourth quadrant of the horizontal adjustment coordinate system, set the rotation direction and the rotation angle of the embedded camera to clockwise and 90°-k° respectively, wherein k° is the adjustment residual angle, and the direction corresponding to the rotation direction is from the camera to the sample;

[0073] Step S103: rotating the lens of the embedded camera based on the rotation direction and rotation angle of the embedded camera.

[0074] Step S2, before the CVD equipment starts to deposit a film on the sample, multiple gaseous reactants mixed when the sample is deposited are obtained, and a mixed analysis method based on an embedded camera is used to obtain a deposition thickness range and a co-mixing condition.

[0075] Step S2 includes: Step S201, before the CVD device starts to operate, a plurality of gaseous reactants mixed when the sample is subjected to film deposition are recorded as gaseous reactants QF1 to QF1 respectively. h ; Use the mixing analysis method to obtain the deposition thickness range and co-generation mixing ratio corresponding to the gaseous reactant QF;

[0076] The mixed analysis method includes: obtaining the gaseous reactant QF1 to the gaseous reactant QF h All the different combination types that can be combined are recorded as gas combination type QZ1 to gas combination type QZ n , where the number of gaseous reactants QF in any gaseous combination type QZ is less than or equal to h and greater than or equal to 2.

[0077] Step S202, create a table of T rows × Y columns, recorded as a mixed analysis table, wherein the top row of the mixed analysis table, except for the first cell, is filled with gas combination types QZ1 to QZ n , except for the first cell in the leftmost column of the mixing analysis table, fill in all the mixing ratios that the CVD equipment can mix for the gaseous reactants from top to bottom; the cells where the row where the mixing ratio is located in the mixing analysis table coincides with the column where the gaseous combination type QZ is located are recorded as mixing cells;

[0078] Step S203, for any mixed cell in the mixed analysis table, record the gas combination type QZ corresponding to the column where the mixed cell is located as the mixed type, and record the mixing ratio corresponding to the row where the mixed cell is located as the combination ratio; put the sample into the CVD device, and pass all gaseous reactants QF of the mixed type into the CVD device in the combination ratio; when the film deposition process of the CVD device is completed and the sample is cooled, use the embedded camera in the CVD device to shoot, and record the obtained image as the interval analysis image; grayscale the interval analysis image, and obtain the sample in the grayscale interval analysis image based on the binarization and the preliminary sample contour. A horizontal reference line segment is drawn within the contour corresponding to the sample, and the contour other than the contour corresponding to the sample where the horizontal reference line segment is located is recorded as the film contour; a plane rectangular coordinate system is established, recorded as the interval analysis coordinate system, wherein the units of the X-axis and the Y-axis of the interval analysis coordinate system are both micrometers; the horizontal reference line segment is overlapped with the X-axis, and the left end point of the horizontal reference line segment is overlapped with the coordinate origin, and based on the positional relationship between the film contour and the horizontal reference line segment, the film contour is drawn in the interval analysis coordinate system, wherein the film contour is in the fourth quadrant of the interval analysis coordinate system; the maximum and minimum values ​​of the absolute values ​​of the ordinates in the points corresponding to the film contour are obtained, recorded as BM respectively max and BM min , will [BM min , B.M. max ] is recorded as the sedimentation thickness interval corresponding to the mixed grid;

[0079] Step S204, obtaining the deposition thickness intervals corresponding to all the mixed cells in the mixed analysis table;

[0080] Step S205, obtaining the thickness range of the thin film on the surface of the sample after the sample is deposited by the CVD device under standard conditions, recorded as [BQ min , BQ max ], the maximum error between the actual thickness of the thin film on the surface of the sample and the ideal thickness after the sample is deposited by the CVD equipment under standard conditions is recorded as the thickness error, where the standard condition is the condition with correct parameters and operation procedures;

[0081] Step S206: for any mixed grid, when the BM corresponding to the mixed gridmin With BQ min The absolute value of the difference is less than or equal to the thickness error and the BM corresponding to the mixed grid max With BQ max When the absolute value of the difference is less than or equal to the thickness error, the mixed grid is recorded as a co-generated mixed grid, and the mixing type corresponding to the mixed grid is recorded as a co-generated mixing situation; obtain all co-generated mixed grids and co-generated mixing situations in the mixing analysis table.

[0082] Step S3, after the CVD equipment starts to operate and deposits a film on the sample, the quality of the film deposition is judged based on the co-generation mixing situation. Step S3 includes: Step S301, after the CVD equipment starts to deposit a film on the sample, when the process is completed and the thickness of the film is within the standard range, obtain gaseous reactants QF1 to gaseous reactants QF h Gas consumption, any gaseous reactant QF h1 The gas consumption is less than the gaseous reactant QF after film deposition by CVD equipment under standard conditions. h1 When the gas consumption is h1 Record as missing reactants; record all gaseous reactants QF other than the missing reactants in the gaseous reactant QF as reactants to be determined;

[0083] Step S302, when all gaseous reactants QF corresponding to the co-generation mixing conditions of any co-generation mixing grid are reactants to be determined, the film deposition quality of the sample is recorded as low-quality film deposition;

[0084] Step S303, when there is no missing reactant in the gaseous reactant QF, the film deposition quality of the sample is recorded as high-quality film deposition;

[0085] Step S304, when there are missing reactants in the gaseous reactants QF and all gaseous reactants QF corresponding to the co-generation mixing situation of the co-generation mixing grid are reactants to be determined, the film deposition quality of the sample is recorded as conventional quality film deposition.

[0086] Example 3, please refer to Figure 5 As shown, Figure 5The schematic diagram of the structure of an electronic device is illustrated, and the electronic device may include: a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other through the communication bus. The memory stores computer-readable instructions, and the processor can call the instructions in the memory. When the computer-readable instructions are executed by the processor, the steps in the film deposition quality analysis method based on the CVD device are executed to achieve the following functions: first, an embedded camera is installed in the CVD device, and the camera is rotated based on the image obtained by the shooting; multiple gaseous reactants mixed when the sample is deposited are obtained, and the deposition thickness range and the co-generation mixing situation are obtained based on the embedded camera using the mixing analysis method; after the CVD device starts to run and the sample is deposited, the quality of the film deposition is judged based on the co-generation mixing situation.

[0087] In addition, the logic instructions in the above-mentioned memory can be implemented in the form of software functional units and can be stored in a computer-readable storage medium when sold or used as an independent product. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0088] Embodiment 4, the present application also provides a computer-readable storage medium, and the present application provides a storage medium on which a computer program is stored. When the computer program is executed by the processor, the steps in the film deposition quality analysis method based on the CVD device are executed to achieve the following functions: first, an embedded camera is installed in the CVD device, and the camera is rotated based on the captured image; multiple gaseous reactants mixed when the sample is deposited are obtained, and a mixing analysis method is used based on the embedded camera to obtain the deposition thickness range and the co-generation mixing situation; after the CVD device starts to run and performs film deposition on the sample, the quality of the film deposition is judged based on the co-generation mixing situation.

[0089] Through the description of the above implementation methods, the embodiments of the present invention can be provided as methods, systems or computer program products. Based on such an understanding, the above technical solutions can be essentially or partly contributed to the prior art in the form of software products, which can be stored in a computer-readable storage medium, such as ROM / RAM, a magnetic disk, an optical disk, etc., and include several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0090] In the embodiments provided in the present application, it should be understood that the disclosed system or method can be implemented in other ways. The embodiments described above are merely schematic. For example, the division of modules or units is only a logical function division. There may be other division methods in actual implementation. For example, multiple modules or units can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, and the indirect coupling or communication connection of systems, modules and units can be electrical, mechanical or other forms.

[0091] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A film deposition quality analysis method based on a CVD device, characterized in that: The steps include: An embedded camera is installed in the CVD device. When a sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image taken. Before the CVD equipment starts to deposit a film on the sample, multiple gaseous reactants mixed during the deposition of the sample are obtained, and the deposition thickness range and co-generation mixing conditions are obtained using a mixed analysis method based on an embedded camera; After the CVD equipment starts running and deposits films on samples, the quality of the film deposition is judged based on the co-generation mixing situation; Before the CVD device starts to deposit a film on the sample, multiple gaseous reactants mixed when depositing the sample are obtained, including: Before the CVD equipment starts running, the multiple gaseous reactants mixed during the film deposition of the sample are recorded as gaseous reactants QF1 to gaseous reactants QF h ; Use the mixing analysis method to obtain the deposition thickness range and co-generation mixing ratio corresponding to the gaseous reactant QF; The mixed analysis method includes: obtaining the gaseous reactant QF1 to the gaseous reactant QF h All different combination types that can be combined are recorded as gas combination type QZ1 to gas combination type QZ n , where the number of gaseous reactants QF in any gaseous combination type QZ is less than or equal to h and greater than or equal to 2; Using a hybrid analysis method based on an embedded camera to obtain sediment thickness intervals and co-generation mixing conditions includes: Create a table with T rows and Y columns, which is called the mixed analysis table. The top row of the mixed analysis table, except for the first cell, is filled with gas combination types QZ1 to QZ from left to right. n , except for the first cell in the leftmost column of the mixing analysis table, fill in all the mixing ratios that the CVD equipment can mix for the gaseous reactants from top to bottom; the cells where the row where the mixing ratio is located in the mixing analysis table coincides with the column where the gaseous combination type QZ is located are recorded as mixing cells; For any mixed cell in the mixed analysis table, the gas combination type QZ corresponding to the column where the mixed cell is located is recorded as the mixed type, and the mixing ratio corresponding to the row where the mixed cell is located is recorded as the combination ratio; the sample is placed in the CVD device, and all gaseous reactants QF of the mixed type are introduced into the CVD device in the combination ratio; when the film deposition process of the CVD device is completed and the sample is cooled, the embedded camera in the CVD device is used to shoot, and the obtained image is recorded as the interval analysis image; the interval analysis image is grayed, and the sample corresponding to the grayed interval analysis image is obtained based on the binarization and the preliminary sample contour. A horizontal reference line segment within the contour, and the contour where the horizontal reference line segment is located except the contour corresponding to the sample is recorded as the film contour; a plane rectangular coordinate system is established, recorded as the interval analysis coordinate system, wherein the units of the X-axis and the Y-axis of the interval analysis coordinate system are both micrometers; the horizontal reference line segment is overlapped with the X-axis, and the left end point of the horizontal reference line segment is overlapped with the coordinate origin, and based on the positional relationship between the film contour and the horizontal reference line segment, the film contour is drawn in the interval analysis coordinate system, wherein the film contour is in the fourth quadrant of the interval analysis coordinate system; the maximum and minimum values ​​of the absolute values ​​of the ordinates in the points corresponding to the film contour are obtained, recorded as BM respectively max and BM min , will [BM min , B.M. max ] is recorded as the sedimentation thickness interval corresponding to the mixed grid; The hybrid analysis method based on embedded cameras to obtain sediment thickness intervals and co-generation mixing conditions also includes: Obtain the sediment thickness intervals corresponding to all mixed cells in the mixed analysis table; Obtain the thickness range of the film on the sample surface after the sample is deposited by CVD equipment under standard conditions, recorded as [BQ min , BQ max ], the maximum error between the actual thickness of the thin film on the surface of the sample and the ideal thickness after the sample is deposited by the CVD equipment under standard conditions is recorded as the thickness error, where the standard condition is the condition with correct parameters and operation procedures; The hybrid analysis method based on embedded cameras to obtain sediment thickness intervals and co-generation mixing conditions also includes: For any mixed grid, when the BM corresponding to the mixed grid min With BQ min The absolute value of the difference is less than or equal to the thickness error and the BM corresponding to the mixed grid max With BQ max When the absolute value of the difference is less than or equal to the thickness error, the mixed grid is recorded as a co-generated mixed grid, and the mixing type corresponding to the mixed grid is recorded as a co-generated mixing situation; obtain all co-generated mixed grids and co-generated mixing situations in the mixing analysis table.

2. The film deposition quality analysis method based on CVD equipment according to claim 1, characterized in that: An embedded camera is installed in the CVD device. When the sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image taken, including: When installing the embedded camera, the installation position of the embedded camera is a position in the CVD device that can horizontally shoot the sample, and the position of the embedded camera is fixed, and the shot image is adjusted by rotating the lens; when the sample is placed in the CVD device, the camera is used to shoot, and the shot image is recorded as a preliminary image; the preliminary image is gray-scaled, and the contour corresponding to the sample in the gray-scale preliminary image is obtained based on the binarization process, which is recorded as the preliminary sample contour, the longest line segment in the sample contour is recorded as the horizontal reference line segment, and the midpoint of the horizontal reference line segment is recorded as the reference midpoint, and a vertical line is drawn from the reference midpoint to the bottom edge of the preliminary image in the preliminary image, which is recorded as the reference vertical line.

3. The film deposition quality analysis method based on CVD equipment according to claim 2, characterized in that: An embedded camera is installed in the CVD device. When the sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image taken, which also includes: The acute angle between the reference vertical line and the horizontal reference line segment is recorded as the adjustment complementary angle; the reference midpoint is taken as the coordinate origin, the straight line where the reference vertical line is located is taken as the Y axis, and a plane rectangular coordinate system is made, which is recorded as the horizontal adjustment coordinate system; when the horizontal reference line segment is in the first quadrant and the third quadrant of the horizontal adjustment coordinate system, the rotation direction and the rotation angle of the embedded camera are set to counterclockwise and 90°-k° respectively; when the horizontal reference line segment is in the second quadrant and the fourth quadrant of the horizontal adjustment coordinate system, the rotation direction and the rotation angle of the embedded camera are set to clockwise and 90°-k° respectively, where k° is the adjustment complementary angle, and the direction corresponding to the rotation direction is from the camera to the sample; The lens of the embedded camera is rotated based on the rotation direction and rotation angle of the embedded camera.

4. The film deposition quality analysis method based on CVD equipment according to claim 3, characterized in that: After the CVD equipment starts running and deposits a film on the sample, the quality judgment of the film deposition based on the co-generation mixing situation includes: After the CVD equipment starts to deposit a film on the sample, when the process is completed and the thickness of the film is within the standard range, obtain the gaseous reactants QF1 to QF h Gas consumption, any gaseous reactant QF h1 The gas consumption is less than the gaseous reactant QF after film deposition by CVD equipment under standard conditions. h1 When the gas consumption is h1 Record it as the missing reactant; record all the gaseous reactants QF other than the missing reactants in the gaseous reactants QF as the reactants to be determined.

5. The film deposition quality analysis method based on CVD equipment according to claim 4, characterized in that: After the CVD equipment starts running and deposits a film on the sample, the quality judgment of the film deposition based on the co-generation mixing situation also includes: When all gaseous reactants QF corresponding to the co-generation mixing situation of any co-generation mixing grid are reactants to be judged, the film deposition quality of the sample is recorded as low-quality film deposition; When there is no missing reactant in the gaseous reactant QF, the film deposition quality of the sample is recorded as high-quality film deposition; When there are missing reactants in the gaseous reactant QF and all gaseous reactant QFs corresponding to the co-generation mixing situation of the co-generation mixing grid are reactants to be judged, the film deposition quality of the sample is recorded as conventional mass film deposition.

6. A film deposition quality analysis system based on a CVD device, used to implement the film deposition quality analysis method based on a CVD device according to any one of claims 1 to 5, characterized in that: It includes a lens correction module, a co-generation mixed acquisition module and a quality judgment module; The lens correction module is used to install an embedded camera in the CVD device. When the sample is placed in the CVD device, the camera is used to take a picture, and the camera is rotated based on the image taken. The co-generation mixing acquisition module is used to obtain multiple gaseous reactants mixed when depositing the sample before the CVD equipment starts to deposit the film on the sample, and obtain the deposition thickness range and co-generation mixing situation using a mixed analysis method based on an embedded camera; The quality judgment module is used to judge the quality of the film deposition based on the co-generation mixing situation after the CVD equipment starts to run and performs film deposition on the sample.

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