Interface-free material, preparation method thereof, and material processing equipment

Abstract

The present application relates to an interface-free material, a preparation method thereof, and a material processing device, comprising: providing an initial multilayer composite material including a first sublayer to an nth sublayer stacked in sequence; irradiating the surface of the first sublayer with an intense pulsed photon beam, and transmitting the generated energy wave through the first sublayer to the interface between the i-1th sublayer and the i-th sublayer, so as to form diffusion layers at the interfaces of adjacent sublayers between the first sublayer and the i-th sublayer; when the materials of the i-1st sublayer and the i-th sublayer are the first material and the second material respectively, the diffusion layer located at the interface between the i-1st sublayer and the i-th sublayer is a diffusion layer formed by mutual diffusion of atoms and / or molecules of the first material and the second material; the thickness of the diffusion layer is 10 ‑7 m~10 ‑6 m; a first incident angle is formed between the incident direction of the intense pulsed photon beam and the plane where the first sublayer is located, and the first incident angle is greater than 0° and less than or equal to 90°. In this way, the residual stress of the non-interface material can be reduced.

Description

Technical Field

[0001] The present application relates to the field of material manufacturing technology, and in particular to a non-interface material, a preparation method thereof, and material processing equipment. Background Art

[0002] Composite materials are usually composed of a layer of material as a base material and another layer or multiple layers of material as reinforcement compounded on the base material. This multi-layer material composite method allows the various materials to complement each other in terms of performance, thereby producing a synergistic effect, making the overall performance of the composite material excellent.

[0003] Since composite materials are generally manufactured through thermal processing, thermal defects and thermal residual stresses exist within the material, especially at the material interface. It can be said that thermal defects and thermal residual stresses exist in almost all composite materials. For example, for composite materials composed of a substrate and a film layer formed on the surface of the substrate (such as a coating, plating or thermal cladding, etc.), due to the large difference in the physical and chemical properties of the substrate material and the film layer material (such as chemical compatibility, thermal expansion coefficient and Young's modulus, etc.), lattice defects and residual stresses are easily generated at the interface between the substrate and the film layer. Lattice defects and residual stresses affect the thermal and mechanical properties of composite materials and are also the main cause of fatigue failure in composite materials.

[0004] At present, in order to reduce lattice defects and residual stress, commonly used technical means include heat treatment, vibration, shot peening, etc., but these technical means have limited effects and large side effects (such as introducing new thermal defects or destroying the surface morphology). Summary of the Invention

[0005] In view of this, embodiments of the present application provide an interface-free material, a preparation method thereof, and a material processing device to solve at least one problem existing in the background technology.

[0006] In a first aspect, an embodiment of the present application provides a method for preparing a non-interface material, the preparation method comprising:

[0007] Providing an initial multilayer composite material, the initial multilayer composite material comprising a first sublayer to an nth sublayer stacked sequentially, wherein n is greater than or equal to 2;

[0008] irradiating the surface of the first sublayer with an intense pulsed photon beam, whereby the generated energy wave is transmitted through the first sublayer to the interface between the (i-1)th sublayer and the (i)th sublayer, thereby forming diffusion layers at the interfaces of adjacent sublayers between the first sublayer and the (i)th sublayer, where i is greater than or equal to 2 and less than or equal to n;

[0009] In the case where the material of the i-1th sublayer is the first material and the material of the i-th sublayer is the second material, the diffusion layer located at the interface between the i-1th sublayer and the i-th sublayer is a diffusion layer formed by the mutual diffusion of atoms and / or molecules of the first material and the second material; the thickness of the diffusion layer is 10 -7 m~10 -6 m;

[0010] There is a first incident angle between the incident direction of the intense pulsed photon beam and the plane where the first sub-layer is located, and the first incident angle is greater than 0° and less than or equal to 90°.

[0011] In combination with the first aspect of the present application, in an optional embodiment, the first incident angle ranges from 30° to 90°.

[0012] In conjunction with the first aspect of the present application, in an optional embodiment, the energy source of the intense pulsed photon beam is an ultrashort pulse laser, and the width of a single pulse of the intense pulsed photon beam is 10 -15 s~10 -9 s.

[0013] In conjunction with the first aspect of the present application, in an optional implementation manner, the method further includes:

[0014] The surface of the nth sublayer is irradiated with an intense pulsed photon beam, and the generated energy wave is transmitted through the nth sublayer to the interface between the jth sublayer and the j+1th sublayer, so as to form a diffusion layer at the interface between the nth sublayer and the jth sublayer, wherein j is greater than or equal to 1 and less than n; the thickness of the diffusion layer is 10 -7 m~10 -6 m;

[0015] There is a second incident angle between the incident direction of the intense pulsed photon beam and the plane where the n-th sublayer is located, and the second incident angle is greater than 0° and less than or equal to 90°.

[0016] In conjunction with the first aspect of the present application, in an optional embodiment, at least one of the first to the (i-1)th sub-layers comprises a non-transparent material, and the thickness of the at least one sub-layer is less than or equal to 10 -3 m.

[0017] In combination with the first aspect of the present application, in an optional embodiment, adjacent sublayers in the initial multilayer composite material are connected by at least one of a welding process, a hot pressing process, a deposition process, a spraying process, an electroplating process or an additive manufacturing process.

[0018] In conjunction with the first aspect of the present application, in an optional embodiment, an initial diffusion layer is provided between adjacent sub-layers in the initial multi-layer composite material, and the thickness of the initial diffusion layer is 10 -10 m~10 -7 m.

[0019] In a second aspect, an embodiment of the present application provides an interface-free material, which is prepared using the method for preparing the interface-free material as described in the first aspect.

[0020] In a third aspect, the present invention provides another interface-free material, including:

[0021] The first sublayer to the nth sublayer are stacked sequentially, wherein n is greater than or equal to 2;

[0022] at least one diffusion layer located at the interface between the kth sublayer and the k+1th sublayer, where k is greater than or equal to 1 and less than n;

[0023] When the material of the kth sublayer is the first material and the material of the k+1th sublayer is the second material, the diffusion layer located at the interface between the kth sublayer and the k+1th sublayer is a diffusion layer formed by mutual diffusion of atoms and / or molecules of the first material and the second material;

[0024] The thickness of the diffusion layer is 10 -7 m~10 -6 m.

[0025] In a fourth aspect, an embodiment of the present application provides a material processing device, comprising:

[0026] A fixing mechanism for fixing an initial multi-layer composite material to be processed, wherein the initial multi-layer composite material comprises a first sub-layer to an nth sub-layer stacked in sequence, wherein n is greater than or equal to 2;

[0027] An intense pulsed photon beam generator is used to generate an intense pulsed photon beam to perform the method for preparing the interface-free material as described in the first aspect.

[0028] The interface-free material and preparation method and material processing equipment provided in the embodiments of the present application include: providing an initial multilayer composite material, wherein the initial multilayer composite material includes a first sublayer to an nth sublayer stacked in sequence, wherein n is greater than or equal to 2; irradiating the surface of the first sublayer with an intense pulsed photon beam, and the generated energy wave is transmitted through the first sublayer to the interface between the i-1th sublayer and the i-th sublayer, so as to form diffusion layers at the interfaces of adjacent sublayers between the first sublayer and the i-th sublayer, wherein i is greater than or equal to 2 and less than or equal to n; for the case where the material of the i-1th sublayer is the first material and the material of the i-th sublayer is the second material, the diffusion layer located at the interface between the i-1th sublayer and the i-th sublayer is a diffusion layer formed by the mutual diffusion of atoms and / or molecules of the first material and the second material; the thickness of the diffusion layer is 10 -7 m~10 -6 m; there is a first incident angle between the incident direction of the intense pulsed photon beam and the plane where the first sublayer is located, and the first incident angle is greater than 0° and less than or equal to 90°. In the embodiment of the present application, by irradiating the surface of the first sublayer of the initial multilayer composite material with an intense pulsed photon beam, the generated energy wave is transmitted through the first sublayer to the interface between the i-1 sublayer and the i sublayer, so as to form a thickness of 10 -7 m~10 -6 The diffusion layer at the interface of adjacent sublayers is formed by the interdiffusion of atoms and / or molecules from the adjacent sublayers. This changes the microstructure of the interface between the adjacent sublayers (reducing defects and increasing density). This can improve the sudden change in the thermal and mechanical properties of the material at the interface, significantly reducing the residual stress at the interface between the adjacent sublayers, thereby improving the fatigue resistance and service life of the interface-free material. In addition, the passage of energy waves through the sublayers causes atomic diffusion within the sublayers, causing microstructural changes (reducing defects and increasing density) within each sublayer through which the energy waves pass, further improving the fatigue resistance and service life of the interface-free material.

[0029] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0031] Figure 1 A schematic flow chart of a method for preparing a non-interface material provided in an embodiment of the present application;

[0032] Figures 2 to 8 A schematic diagram of the cross-sectional structure of the interface-free material during the preparation process provided in an embodiment of the present application;

[0033] Figure 9 Schematic diagram of the cross-sectional structure of the interface-free material provided in the application embodiment. DETAILED DESCRIPTION

[0034] The exemplary embodiments disclosed herein will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the specific embodiments described herein. Rather, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope of the present application to those skilled in the art.

[0035] In the following description, numerous specific details are provided to provide a more thorough understanding of the present application. However, it will be apparent to those skilled in the art that the present application can be practiced without one or more of these details. In other instances, certain technical features known in the art are not described to avoid confusion with the present application; that is, all features of actual embodiments are not described herein, nor are well-known functions and structures described in detail.

[0036] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0037] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. And when the second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part is present in the present application.

[0038] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the drawings is flipped, then the elements or features described as "under the other elements" or "under it" or "under it" will be oriented as "on" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0039] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present application. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0040] In order to fully understand the present application, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may also have other implementation methods.

[0041] In composite materials, lattice defects and residual stresses tend to concentrate at the interfaces between different material layers. For example, when depositing other film layers on a substrate, on the one hand, the difference in lattice parameters between the film layer and the substrate will lead to lattice mismatch and defects, which usually generates intrinsic stress at the interface between the substrate and the film layer. On the other hand, due to the different physical properties of the substrate and the film layer, there are differences in the thermal properties (including the thermal expansion coefficient) of the substrate and the film layer. When the temperature changes, thermal expansion will be restricted, which easily generates thermal stress at the interface between the substrate and the film layer. The lattice defects and residual stresses at these interfaces play a decisive role in the thermal and mechanical properties of the composite material, which can lead to reduced fatigue resistance and service life of the composite material.

[0042] Based on this, an embodiment of the present application provides a method for preparing a non-interface material. Figure 1 Schematic diagram of the process for preparing the interface-free material provided in the embodiment of the present application; Figure 1As shown, the method includes:

[0043] Step S101, providing an initial multi-layer composite material, the initial multi-layer composite material comprising a first sub-layer to an nth sub-layer stacked in sequence, where n is greater than or equal to 2;

[0044] Step S102, irradiating the surface of the first sublayer with an intense pulsed photon beam, and the generated energy wave is transmitted through the first sublayer to the interface between the i-1th sublayer and the i-th sublayer, so as to form diffusion layers at the interfaces of adjacent sublayers between the first sublayer and the i-th sublayer, wherein i is greater than or equal to 2 and less than or equal to n; when the material of the i-1th sublayer is the first material and the material of the i-th sublayer is the second material, the diffusion layer located at the interface between the i-1th sublayer and the i-th sublayer is a diffusion layer formed by the mutual diffusion of atoms and / or molecules of the first material and the second material; the thickness of the diffusion layer is 10 -7 m~10 -6 m; there is a first incident angle between the incident direction of the intense pulsed photon beam and the plane where the first sublayer is located, and the first incident angle is greater than 0° and less than or equal to 90°.

[0045] It can be understood that, through the above method, the surface of the first sub-layer of the initial multi-layer composite material is irradiated with an intense pulsed photon beam, and the generated energy wave is transmitted through the first sub-layer to the interface between the i-1 sub-layer and the i-th sub-layer, so as to form a thickness of 10 -7 m~10 -6 The diffusion layer at the interface of adjacent sublayers is formed by the interdiffusion of atoms and / or molecules from the adjacent sublayers. This changes the microstructure of the interface between the adjacent sublayers (reducing defects and increasing density). This can improve the sudden change in thermal and mechanical properties at the interface, significantly reducing residual stress at the interface between the adjacent sublayers, thereby improving the fatigue resistance and service life of the interface-free material. In addition, the passage of energy waves through the sublayers causes atomic diffusion within the sublayers, causing microstructural changes (reducing defects and increasing density) within each sublayer through which the energy waves pass, further improving the fatigue resistance and service life of the interface-free material.

[0046] It should be noted that in the embodiment of the present application, a diffusion layer is formed at the interface between adjacent sub-layers, so that the original interface between the adjacent sub-layers disappears. Since the diffusion layer is formed by the mutual diffusion of material atoms and / or molecules of the adjacent sub-layers, and is an atomic-level gradient diffusion, there is no obvious boundary of composition and structural changes between the diffusion layer and the adjacent sub-layer. Therefore, it can be considered that the interface between the diffusion layer and the adjacent sub-layer has disappeared both microscopically and macroscopically. Therefore, the prepared material is called an interface-free material.

[0047] Next, combine Figures 2 to 8 The preparation method of a non-interface material provided in the embodiment of the present application and its beneficial effects are further described in detail.

[0048] First, please refer to Figure 2 , executing step S101, providing an initial multilayer composite material 10, the initial multilayer composite material 10 includes a first sublayer 101 to an nth sublayer 106 stacked in sequence, where n is greater than or equal to 2.

[0049] In the embodiment of the present application, the material of each sublayer in the initial multilayer composite material 10 may be the same or different, and the thickness of each sublayer may be the same or different. The material of each sublayer may, for example, include metal and / or non-metal respectively. In some specific embodiments, the material of each sublayer may, for example, include at least one of ceramic, metal or diamond respectively. For example, when n=2, the first sublayer 101 and the second sublayer may be a metal-ceramic composite material, a metal-metal composite material, a metal-diamond composite material, a ceramic-ceramic composite material or a ceramic-diamond composite material. When n=3, the first sublayer 101, the second sublayer and the third sublayer may, for example, be a metal-ceramic-metal composite material, a metal-metal-ceramic composite material, a metal-ceramic-ceramic composite material, a metal-ceramic-diamond composite material or a metal-diamond-ceramic composite material.

[0050] In some embodiments, adjacent sublayers in the initial multilayer composite material 10 can be connected by at least one of a welding process, a hot pressing process (e.g., vacuum hot pressing), a deposition process (e.g., chemical vapor deposition, physical vapor deposition, or atomic layer vapor deposition), a spraying process (e.g., cold spraying or thermal spraying), an electroplating process, or an additive manufacturing process (e.g., electron beam 3D printing, laser 3D printing, cladding, or sintering).

[0051] As previously mentioned, in the initial multilayer composite material 10, residual stress tends to concentrate at the interfaces between different sublayers. When adjacent sublayers are made of the same material, they can have different morphologies, such as different crystal phases. For example, in high-temperature additive manufacturing (AM) materials, when adjacent layers are made of the same material, the different temperatures of the different layers during the manufacturing process can lead to different crystal phases at the interfaces between the adjacent layers, which in turn can cause thermal residual stress concentration.

[0052] In some embodiments, adjacent sub-layers in the initial multi-layer composite material 10 may be connected by physical means, wherein the surface roughness of the connecting surfaces of the adjacent sub-layers is less than 10 μm.

[0053] In the embodiment of the present application, when the surface roughness of the connecting surfaces of adjacent sub-layers is less than 10 μm, the connecting surfaces of the adjacent sub-layers are sufficiently smooth, allowing the adjacent sub-layers to be well physically bonded together. For example, a transparent or translucent material and a non-transparent material, as well as a transparent material and a translucent material, can be physically connected to form an initial multi-layer composite material 10, so that the initial multi-layer composite material 10 can be processed using the above-mentioned method for preparing a non-interface material.

[0054] Next, please refer to Figure 3 and Figure 4 , execute step S102, irradiate the surface of the first sub-layer 101 with an intense pulsed photon beam (such as Figure 3 The generated energy wave is transmitted through the first sub-layer 101 to the interface between the i-1 sub-layer 102 and the i-th sub-layer 103, so as to form diffusion layers 20 at the adjacent sub-layer interfaces between the first sub-layer 101 and the i-th sub-layer 103 (see Figure 4 ), where i is greater than or equal to 2 and less than or equal to n; in the case where the material of the i-1th sublayer 102 is the first material and the material of the i-th sublayer 103 is the second material, the diffusion layer 20 located at the interface between the i-1th sublayer 102 and the i-th sublayer 103 is a diffusion layer formed by the mutual diffusion of atoms and / or molecules of the first material and the second material; the thickness of the diffusion layer 20 is 10 -7 m~10 -6 m; there is a first incident angle α between the incident direction of the intense pulsed photon beam and the plane where the first sublayer 101 is located, and the first incident angle α is greater than 0° and less than or equal to 90°.

[0055] The first sublayer 101 may include a top surface and a bottom surface opposite to the top surface, wherein the top surface is the side irradiated by the intense pulsed photon beam. While ignoring the flatness of the top surface and the bottom surface, the surface where the top surface and the bottom surface of the first sublayer 101 are located, or strictly speaking, the center plane in the thickness direction of the first sublayer 101, is determined as the plane where the first sublayer 101 is located.

[0056] In an embodiment of the present application, an intense pulsed photon beam is used to irradiate the surface of the first sublayer 101 of the initial multilayer composite material 10, and the generated energy wave is transmitted through the first sublayer 101 to the interface between the i-1 sublayer 102 and the i-th sublayer 103, so as to form diffusion layers 20 at the adjacent sublayer interfaces between the first sublayer 101 and the i-th sublayer 103. Since the diffusion layers 20 located at the adjacent sublayer interfaces are formed by the mutual diffusion of material atoms and / or molecules of the adjacent sublayers, the process of forming the diffusion layers 20 will cause the lattice in the adjacent sublayer materials to be filled and ordered, thereby reducing the lattice defects (such as vacancies) in the diffusion layer 20 and the sublayer materials on both sides of the diffusion layer 20, and optimizing the microstructure of the adjacent sublayer interface, which can improve the sudden change of thermal and mechanical properties at the interface. In this way, the residual stress at the adjacent sublayer interface can be significantly reduced, thereby improving the fatigue resistance and service life of the interface-free material. In addition, since the energy wave passes through the sublayer, atomic diffusion occurs within the sublayer, which optimizes the microstructure of each sublayer through which the energy wave passes. After the microstructure of the corresponding sublayer is optimized, the fatigue resistance and service life of the interface-free material can be further improved.

[0057] In the embodiment of the present application, an intense pulsed photon beam irradiates the surface of the first sublayer 101, and interacts with the atoms and / or molecules on the surface of the first sublayer 101 to generate energy waves, such as ultrasonic waves. In the process of the energy wave being transmitted through the first sublayer 101 to the interface between the i-1 sublayer 102 and the i-th sublayer 103, it causes displacement or diffusion of atoms and / or molecules inside the sublayer material and at the interface. This process is a physical process. Compared with the conventional high-temperature method (such as annealing) for treating composite materials, the diffusion layer 20 in the present application can be regarded as a diffusion layer 20 bonded by room-temperature diffusion bonds. The room-temperature diffusion bonds here can be understood as, at room temperature, under the action of energy, atoms and / or molecules in the materials of adjacent sublayers diffuse with each other to form new molecular orbitals. Therefore, the problem of high-temperature treatment easily introducing new thermal residual stresses in the composite material can be avoided. Moreover, the thickness range of the diffusion layer 20 bonded by room-temperature diffusion bonds is 10 -7 m~10 -6 m, which can better improve the mutation of thermal and mechanical properties at the interface, and thus can better improve the thermal and mechanical properties of the prepared interface-free materials.

[0058] In an embodiment of the present application, an intense pulsed photon beam is used to irradiate the surface of the first sublayer 101. By changing the relative position between the energy source of the intense pulsed photon beam and the initial multilayer composite material 10, the interfaces between adjacent sublayers in the initial multilayer composite material 10 can be easily and comprehensively processed, thereby better ensuring the thermal and mechanical properties of the prepared interface-free material.

[0059] It should be noted that Figure 4 The diffusion layer 20 between the i-1 sub-layer 102 and the i-1 sub-layer 103 is shown as an example. It can be understood that in the first sub-layer 101 to the i-1 sub-layer 102, the diffusion layer 20 is formed at the interface of the adjacent sub-layers, and the specific material and structure of the diffusion layer 20 are related to the material of the adjacent sub-layer. In addition, Figure 4 The case where i is less than n is exemplarily shown in FIG. 1 . When i is equal to n, it can be understood that in the obtained interface-free material, a diffusion layer 20 is formed between every two adjacent sub-layers.

[0060] The larger the first incident angle α between the incident direction of the intense pulsed photon beam and the plane of the first sub-layer 101, the more concentrated the irradiation energy and the higher the efficiency of the irradiation treatment. Therefore, in some embodiments, the first incident angle α can range from 30° to 90°, for example, 45°, 60°, 75°, or 80°. This can improve the efficiency of energy utilization of the intense pulsed photon beam. In a specific embodiment, the first incident angle α can be 90°, which can achieve higher efficiency in energy utilization of the intense pulsed photon beam.

[0061] In some embodiments, the energy source of the intense pulsed photon beam can be an ultrashort pulse laser, and the width of a single pulse of the intense pulsed photon beam is 10 -15 s~10 -9 s.

[0062] The width of a single pulse of an intense pulsed photon beam is 10 -15 s~10 -9 s, the total energy can be controlled by the irradiation frequency, etc., so that the diffusion layer 20 with room-temperature diffusion bonds can be well formed. It can be understood that in actual preparation, the energy of the intense pulsed photon beam can be selected in combination with the physical properties of the sub-layer material itself (dielectric constant or melting point, etc.), as well as parameters such as the sub-layer interface and the internal performance of the sub-layer.

[0063] In some embodiments, at least one of the first to i-1th sub-layers comprises a non-transparent material, and the thickness of the at least one sub-layer may be less than or equal to 10 -3 m.

[0064] In the embodiment of the present application, the thickness of the sub-layer including the non-transparent material in the first sub-layer 101 to the (i-1)th sub-layer 102 is less than or equal to 10 -3 m, the range of choices of the energy source of the intense pulsed photon beam can be made wider. It can be understood that if one of the first to i-1 sublayers includes a non-transparent material, the thickness of the sublayer including the non-transparent material is less than or equal to 10 -3m, if multiple sub-layers from the first sub-layer to the (i-1)th sub-layer include non-transparent materials, the total thickness of the multiple sub-layers including non-transparent materials is less than or equal to 10 -3 m, so that the energy source of the intense pulsed photon beam can be selected more conveniently so that when the intense pulsed photon beam is used to irradiate the surface of the first sub-layer 101, it is ensured that the generated energy wave can be smoothly transmitted through the first sub-layer 101 to the interface between the i-1 sub-layer 102 and the i sub-layer 103.

[0065] In some embodiments, please refer to Figure 5 and Figure 6 The method for preparing the interface-free material may further include: irradiating the surface of the n-th sub-layer 106 with an intense pulsed photon beam (eg Figure 5 The generated energy wave is transmitted through the nth sub-layer 106 to the interface between the jth sub-layer 104 and the j+1th sub-layer 105, so as to form diffusion layers 20 at the adjacent sub-layer interfaces between the nth sub-layer 106 and the jth sub-layer 104 (see Figure 6 ), where j is greater than or equal to 1 and less than n; the thickness of the diffusion layer 20 is 10 -7 m~10 -6 m;

[0066] There is a second incident angle β between the incident direction of the intense pulsed photon beam and the plane where the n-th sublayer 106 is located. The second incident angle β is greater than 0° and less than or equal to 90°.

[0067] In an embodiment of the present application, an intense pulsed photon beam can be used to irradiate the surfaces of the first sublayer 101 and the n-th sublayer 106 respectively to form a diffusion layer 20 at the interface between the target adjacent sublayers, so that the initial multilayer material can be processed more flexibly. In actual preparation, the surface of the first sublayer 101 can be irradiated first, and then the surface of the n-th sublayer 106 can be irradiated, or the surface of the n-th sublayer 106 can be irradiated first, and then the surface of the first sublayer 101 can be irradiated, or the surfaces of the first sublayer 101 and the n-th sublayer 106 can be irradiated at the same time. In some specific embodiments, for a composite material formed by a transparent material and a non-transparent material, an intense pulsed photon beam can be selected to irradiate the surface of the transparent material, so that the controllability and treatment effect of the irradiation treatment can be better.

[0068] It should be noted that Figure 6The diffusion layer 20 between the j-th sublayer 104 and the j+1-th sublayer 105 is exemplarily shown. It can be understood that in the j+1-th sublayer 105 to the n-th sublayer 106, the diffusion layer 20 is formed at the interface of the adjacent sublayers. The formation process of the diffusion layer 20 and the material and structure of the diffusion layer 20 here can be understood by referring to the formation process of the diffusion layer 20 and the material and structure of the diffusion layer 20 in the aforementioned embodiment, and will not be repeated here.

[0069] It also needs to be explained, Figure 5 What is shown is the case where j is greater than i. In some other embodiments of the present application, the case where j is less than or equal to i is not excluded.

[0070] In some specific embodiments, the second incident angle β can be in the range of 30° to 90°, for example, 45°, 60°, 75°, or 80°. This can improve the efficiency of energy utilization of the intense pulsed photon beam. In a specific embodiment, the second incident angle β can be 90°, which can achieve higher efficiency of energy utilization of the intense pulsed photon beam.

[0071] In some specific embodiments, at least one of the nth sub-layer 106 to the jth sub-layer 104 comprises a non-transparent material, and the thickness of at least one sub-layer is less than or equal to 10 -3 m, so that the energy source of the intense pulsed photon beam can be selected more conveniently so that when the intense pulsed photon beam is used to irradiate the surface of the n-th sub-layer 106, it is ensured that the generated energy wave can be smoothly transmitted through the n-th sub-layer 106 to the interface between the j-th sub-layer 104 and the j+1-th sub-layer 105.

[0072] It should be noted that the non-transparent material described in the embodiments of the present application includes a material that has a certain blocking effect on photon beams.

[0073] In some embodiments, as Figure 7 As shown, there may be an initial diffusion layer 30 between adjacent sub-layers in the initial multi-layer composite material 10, and the thickness of the initial diffusion layer 30 is 10 -10 m~10 -7 m.

[0074] Figure 7 In the example of n=2, in the initial multilayer composite material 10 formed by the existing process, there is a certain wettability between the first sublayer 101 and the nth sublayer 106, and an initial diffusion layer 30 can be formed. However, the thickness of the initial diffusion layer 30 is 10 -10 m~10 -7m, the initial diffusion layer 30 is usually obtained after heat treatment, so there are many thermal defects in the initial diffusion layer 30, the lattice arrangement is disordered, and the residual stress is large. The embodiment of the present application can be based on the initial diffusion layer 30, and the surface of the first sub-layer 101 is irradiated to cause the atoms and / or lattices of the initial diffusion layer 30 and the nearby sub-layer materials to vibrate, displace, diffuse and rearrange, thereby forming Figure 8 The diffusion layer 20 is shown.

[0075] The residual stress in the interface-free material and the corresponding initial multilayer composite material prepared in the embodiment of the present application was tested by X-ray diffraction (XRD). The diffraction peak shift effect at different ψ angles is related to the change in the interplanar spacing d. The stress value is calculated based on sin 2 The partial derivative of ψ with respect to d is shown in Table 1, where the interface-free material is obtained by processing the corresponding initial multilayer composite material using the preparation method of the interface-free material in this application. The initial multilayer composite material corresponding to the interface-free material is a substrate plus a coating, where the substrate is cobalt-containing carbide (WC), and the coating is TiCN and Al2O3 prepared by a chemical vapor deposition process and sequentially stacked on the substrate.

[0076] It can be seen from the data in Table 1 that the residual stress of the interface-free material prepared using the embodiment of the present application is significantly reduced compared to the residual stress in the corresponding initial multilayer composite material, which can effectively improve the fatigue resistance and service life of the interface-free material.

[0077] Table 1

[0078]

[0079] Based on this, an embodiment of the present application provides an interface-free material, which is prepared using the steps in the method for preparing the interface-free material provided in any of the aforementioned embodiments.

[0080] Based on this, the present application provides another interface-free material, such as Figure 9 As shown, non-interface materials include:

[0081] A first sublayer 101 to an nth sublayer 106 are sequentially stacked, wherein n is greater than or equal to 2;

[0082] at least one diffusion layer 20 located at the interface between the kth sublayer 107 and the k+1th sublayer 108 , where k is greater than or equal to 1 and less than n;

[0083] When the material of the kth sublayer 107 is the first material and the material of the k+1th sublayer 108 is the second material, the diffusion layer 20 located at the interface between the kth sublayer 107 and the k+1th sublayer 108 is a diffusion layer 20 formed by mutual diffusion of atoms and / or molecules of the first material and the second material;

[0084] The thickness of the diffusion layer 20 is 10 -7 m~10 -6 m.

[0085] In the embodiment of the present application, the diffusion layer 20 located at the interface between the kth sublayer 107 and the k+1th sublayer 108 is formed by the mutual diffusion of atoms and / or molecules of the first material and the second material. During the diffusion process, the lattices in the adjacent sublayer materials are filled and ordered, thereby reducing the lattice defects (such as vacancies) in the diffusion layer 20 and the sublayer materials near the diffusion layer 20 and optimizing the microstructure of the interface between the adjacent sublayers. The thickness of the diffusion layer 20 is 10 -7 m~10 -6 m, can effectively improve the sudden change in thermal and mechanical properties at the interface, thus significantly reducing the residual stress at the interface between adjacent sublayers, thereby improving the fatigue resistance and service life of the interface-free material. In addition, the diffusion layer 20 in the embodiment of the present application can be located at the interface between any pair or multiple pairs of adjacent sublayers in the interface-free material.

[0086] The non-interface material in the embodiment of the present application may be, for example, a composite material.

[0087] Based on this, an embodiment of the present application provides a material processing device, including:

[0088] A fixing mechanism for fixing an initial multi-layer composite material to be processed, wherein the initial multi-layer composite material comprises a first sub-layer to an nth sub-layer stacked in sequence, wherein n is greater than or equal to 2;

[0089] An intense pulsed photon beam generator is used to generate an intense pulsed photon beam to execute the method for preparing the interface-free material provided in any of the aforementioned embodiments.

[0090] In some embodiments, the material processing equipment may further include: a first movement mechanism, configured to drive the fixing mechanism to move so as to adjust the position of the initial multi-layer composite material.

[0091] Exemplarily, the first motion mechanism can drive the fixed mechanism to move so that the intense pulsed photon beam generated by the intense pulsed photon beam generating device can irradiate the surface of the first sublayer and / or the nth sublayer of the initial multi-layer composite material to be processed, and the intense pulsed photon beam can irradiate the surface of the first sublayer and / or the nth sublayer along a preset trajectory. Irradiation treatment can be conveniently performed for the case where the surface of the first sublayer and / or the nth sublayer is a two-dimensional plane or a three-dimensional plane. Furthermore, the first motion mechanism can also drive the fixed mechanism to move to adjust the incident angle of the intense pulsed photon beam incident on the surface of the first sublayer and / or the nth sublayer. The incident angle here can be the angle between the incident direction of the intense pulsed photon beam and the plane where the first sublayer and / or the nth sublayer is located.

[0092] In some embodiments, the material processing equipment may further include: a second motion mechanism, configured to drive the intense pulsed photon beam generating device to move so as to adjust the emission direction of the intense pulsed photon beam.

[0093] Exemplarily, the second motion mechanism can drive the intense pulsed photon beam generating device to move, so that the intense pulsed photon beam generated by the intense pulsed photon beam generating device can be irradiated to the surface of the first sublayer and / or the nth sublayer of the initial multi-layer composite material to be processed, and the intense pulsed photon beam can irradiate the surface of the first sublayer and / or the nth sublayer along a preset trajectory. The situation where the surface of the first sublayer and / or the nth sublayer is a two-dimensional plane or a three-dimensional plane can be conveniently handled. Furthermore, the second motion mechanism can also drive the fixing mechanism to move to adjust the incident angle of the intense pulsed photon beam incident on the surface of the first sublayer and / or the nth sublayer. The incident angle here can be the angle between the incident direction of the intense pulsed photon beam and the plane where the first sublayer and / or the nth sublayer is located.

[0094] In some embodiments, the material processing apparatus may further include a transmission and transformation device for changing the spot shape and transmission path of the intense pulsed photon beam. This allows for more convenient and flexible control of the energy and angle of incidence of the intense pulsed photon beam upon the surface of the first and / or nth sublayers of the initial multi-layer composite material to be processed.

[0095] It can be understood that in some other embodiments of the present application, the position of the intense pulsed photon beam generating device and the fixing mechanism as well as the intense pulsed photon beam spot shape and transmission path can be coordinated by the first motion mechanism, the second motion mechanism and the conduction and transformation device to achieve more flexible control of the intense pulsed photon beam irradiation to the surface of the first sublayer and / or the nth sublayer of the initial multi-layer composite material to be processed.

[0096] It should be noted that the embodiments of the interface-free material provided in this application, the embodiments of the method for preparing the interface-free material, and the embodiments of the material processing equipment are of the same concept; the various technical features in the technical solutions described in the embodiments can be arbitrarily combined without conflict. However, it should be further noted that the combination of the various technical features of the interface-free material provided in the embodiments of this application can already solve the technical problem to be solved by this application; therefore, the interface-free material provided in the embodiments of this application is not limited by the method for preparing the interface-free material provided in the embodiments of this application, and any interface-free material prepared by the method for preparing the interface-free material provided in the embodiments of this application is within the scope of protection of this application.

[0097] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations of the claims. Various modifications and variations may be made to the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form additional embodiments of the present application that may not be explicitly described. Therefore, the above embodiments merely illustrate several implementations of the present application and do not limit the scope of protection of the patent application.

Claims

1. A method for preparing a non-interface material, characterized in that: The method comprises: An initial multilayer composite material is provided, wherein the initial multilayer composite material comprises a first sublayer to an nth sublayer stacked in sequence, wherein n is greater than or equal to 2; an initial diffusion layer is provided between adjacent sublayers in the initial multilayer composite material, and the thickness of the initial diffusion layer is 10 -10 m~10 -7 m; An intense pulsed photon beam is used to irradiate the surface of the first sublayer, and the generated energy wave is transmitted through the first sublayer to the interface between the i-1th sublayer and the i-th sublayer, so as to form a diffusion layer at the interface of adjacent sublayers between the first sublayer and the i-th sublayer, wherein i is greater than or equal to 2 and less than or equal to n; the energy source of the intense pulsed photon beam is an ultrashort pulse laser, and the width of a single pulse of the intense pulsed photon beam is 10 -15 s~10 -9 s; In the case where the material of the i-1th sublayer is the first material and the material of the i-th sublayer is the second material, the diffusion layer located at the interface between the i-1th sublayer and the i-th sublayer is a diffusion layer formed by the mutual diffusion of atoms and / or molecules of the first material and the second material; the thickness of the diffusion layer is 10 -7 m~10 -6 m; There is a first incident angle between the incident direction of the intense pulsed photon beam and the plane where the first sub-layer is located, and the first incident angle is greater than 0° and less than or equal to 90°.

2. The method for preparing the interface-free material according to claim 1, wherein: The first incident angle ranges from 30° to 90°.

3. The method for preparing the interface-free material according to claim 1, wherein: The method further comprises: The surface of the nth sublayer is irradiated with an intense pulsed photon beam, and the generated energy wave is transmitted through the nth sublayer to the interface between the jth sublayer and the j+1th sublayer, so as to form a diffusion layer at the interface between the nth sublayer and the jth sublayer, wherein j is greater than or equal to 1 and less than n; the thickness of the diffusion layer is 10 -7 m~10 -6 m; There is a second incident angle between the incident direction of the intense pulsed photon beam and the plane where the n-th sublayer is located, and the second incident angle is greater than 0° and less than or equal to 90°.

4. The method for preparing the interface-free material according to any one of claims 1 to 3, characterized in that: At least one of the first to the (i-1)th sublayers comprises a non-transparent material, and a thickness of the at least one sublayer is less than or equal to 10 -3 m.

5. The method for preparing the interface-free material according to any one of claims 1 to 3, characterized in that: Adjacent sub-layers in the initial multi-layer composite material are connected by at least one of a welding process, a hot pressing process, a deposition process, a spraying process, an electroplating process or an additive manufacturing process; Alternatively, adjacent sub-layers in the initial multi-layer composite material are connected by physical means, wherein the surface roughness of the connecting surfaces of the adjacent sub-layers is less than 10 μm.

6. A non-interface material, characterized in that: The interface-free material is prepared by the method for preparing the interface-free material according to any one of claims 1 to 5.

7. A material processing equipment, characterized in that include: A fixing mechanism for fixing an initial multi-layer composite material to be processed, wherein the initial multi-layer composite material comprises a first sub-layer to an nth sub-layer stacked in sequence, wherein n is greater than or equal to 2; An intense pulsed photon beam generator is used to generate an intense pulsed photon beam to perform the method for preparing the interface-free material according to any one of claims 1 to 5.

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