Multifunctional waveguide type optoelectronic device based on phase change material and application thereof

Abstract

The invention belongs to the technical field of photoelectronic devices, and relates to a multifunctional waveguide type photoelectronic device based on a phase change material and application thereof, specifically, positive bias pulse is applied to the photoelectronic device, so that the phase change material is converted from a crystalline state to an amorphous state, and at the moment, the photoelectronic device is used as a heater or a waveguide phase shifter; a first positive bias pulse is applied to the optoelectronic device, so that the phase change material is completely converted from a crystalline state to an amorphous state, then a second positive bias pulse is applied to the optoelectronic device, so that the phase change material is converted from the amorphous state to the crystalline state, and at the moment, the optoelectronic device is used as an optical attenuator or an optical detector or a waveguide phase shifter. The voltage of the first positive bias pulse is larger than the voltage of the second positive bias pulse, the pulse time of the first positive bias pulse is smaller than the pulse time of the second positive bias pulse, high-loss and low-loss switching of the optoelectronic device can be achieved, and the optoelectronic device has the unique function of integrating detection and adjustment.

Description

Technical Field

[0001] The present invention belongs to the technical field of optoelectronic devices, and in particular, relates to a multifunctional waveguide optoelectronic device based on phase change materials and applications thereof. Background Art

[0002] With the explosive growth of information in the era of artificial intelligence, people's demand for the efficiency of computing systems is also growing rapidly. Optical neural networks can achieve efficient computing with more accurate information extraction and fewer network parameters, and are considered to be ideal candidates for future neuromorphic hardware processors. The inherent high parallelism and high computing bandwidth of photonic devices bring unique advantages to optical computing. Photodetectors, as the core components for signal conversion in high-speed optical communications and optical computing systems, are developing towards higher responsiveness, wider wavelength range, and higher bandwidth. However, as an electro-optical conversion device, almost all light is converted into carriers to form current, which has high loss characteristics and leads to limited reconstruction capabilities of a single device.

[0003] Phase change materials are functional materials that undergo a structural transition from amorphous to crystalline near the phase change temperature, forming an electronic structure change from insulating to metallic, which causes a significant difference in optical constants before and after the phase change, and are used to regulate specific optical properties. Phase change materials have the ability to be repeatedly erased and written, and are also non-volatile, can reconstruct photonic circuits, and have great application potential in optical computing.

[0004] Prior art CN 106782645 B discloses an integrated optoelectronic storage device based on phase change nanowires and a test method thereof. The purpose of the device is to achieve multi-level storage, and the nanowires undergo phase change by applying electric pulses or erasing light pulses to the electrodes. The light intensity detection is performed by extracting light from the grating and monitoring the transmittance through an external photodetector. Therefore, the device itself does not have the function of a photodetector, so this technology greatly weakens the scalability and reconfigurable function number of phase change material devices. Prior art CN 110739359 A discloses an α-phase GeTe wide-spectrum infrared detector and a preparation method thereof. The technology realizes an infrared detector by directly multiplying an α-phase GeTe photosensitive layer on a substrate and then depositing a metal electrode layer for infrared thermal imaging. However, the detector is surface receiving, has no optical waveguide interlayer structure, and cannot form a photon circuit, which is not conducive to low-cost, large-scale on-chip integration with other optoelectronic devices. Prior art CN 217086596 U discloses a novel photovoltaic cell device and ultraviolet photodetector, whose phase change material is a thermal phase change material, which is used in the heat absorption layer design to quickly dissipate the heat energy of light, but does not use the optical phase change material and its own photoelectric properties to realize the photodetector. Summary of the invention

[0005] In view of the defects of the prior art, the present invention provides a multifunctional waveguide optoelectronic device based on phase change material, which solves the technical problems of the prior art that the detector has a single function and cannot be reconfigured, and achieves the technical effect of an optoelectronic device with multiple functions, reconfigurability and high integration.

[0006] According to a first aspect of the present invention, there is provided an optoelectronic device based on a phase change material, and its structure is specifically as follows: from bottom to top, it includes a substrate layer, a lower cladding layer, an optical waveguide, a phase change material layer, and a phase change material buffer layer, the optical waveguide includes a P-type doped waveguide, an N-type doped waveguide, and an undoped waveguide, the P-type doped waveguide and the N-type doped waveguide are respectively located at both ends of the undoped waveguide, the phase change material layer covers the undoped waveguide, the phase change material buffer layer completely covers the phase change material layer, the tops of the P-type doped waveguide and the N-type doped waveguide are respectively connected to a first metal electrode and a second metal electrode, the surfaces of the P-type doped waveguide, the N-type doped waveguide, the undoped waveguide, and the phase change material buffer layer that are not covered are all covered by an upper cladding layer; the tops of the first metal electrode and the second metal electrode are exposed from the upper cladding layer.

[0007] According to another aspect of the present invention, an optoelectronic device based on phase change material is provided, and its structure is specifically as follows: from bottom to top, it includes a substrate layer, a lower cladding layer, an optical waveguide, and a phase change material buffer layer, the optical waveguide includes a P-type doped waveguide, an N-type doped waveguide, and an undoped waveguide, the P-type doped waveguide and the N-type doped waveguide are respectively located at the two ends of the undoped waveguide, the top of the undoped waveguide is provided with a groove, the groove is filled with a phase change material layer, and the top of the phase change material layer covers the phase change material buffer layer; the upper parts of the P-type doped waveguide and the N-type doped waveguide are respectively connected to a first metal electrode and a second metal electrode, the surfaces covered by the P-type doped waveguide, the N-type doped waveguide, the undoped waveguide, and the phase change material buffer layer are all covered by an upper cladding layer, and the tops of the first metal electrode and the second metal electrode are exposed from the upper cladding layer.

[0008] According to another aspect of the present invention, there is provided an optoelectronic device based on a phase change material, and its structure is specifically as follows: from bottom to top, it includes a base layer, a lower cladding layer, an undoped optical waveguide, a phase change material layer, and a phase change material buffer layer, the phase change material layer covers the middle area of ​​the undoped optical waveguide, the four edges of the undoped optical waveguide are not covered by the phase change material layer, the two ends inside the phase change material layer are respectively embedded with a P-type doped waveguide and an N-type doped waveguide, the two ends of the top of the phase change material layer are respectively connected to a first metal electrode and a second metal electrode, the phase change material buffer layer covers the area of ​​the top of the phase change material layer that is not covered by the first metal electrode and the second metal electrode, the surfaces of the undoped optical waveguide, the phase change material layer, and the phase change material buffer layer that are not covered are all covered by the upper cladding layer, and the tops of the first metal electrode and the second metal electrode are exposed from the upper cladding layer.

[0009] Preferably, the material of the phase change material layer is selected from Ge x Te 1-x , Sb x Se 1-x , Sb x S 1-x , Sb x Te 1-x ,Ge x S 1-x ,Ge x Se 1-x ,Ge x Sb y Te 1-x-y ,Ge x Se y Te 1-x-y ,Ge x Sb y S z Se 1-x-y-z ,Ge x Sb y Se z Te 1-x-y-z When the material of the phase change material layer is Ge x Te 1-x , Sb x Se 1-x , Sb x S 1-x , Sb x Te 1-x ,Ge x S 1-x ,Ge x Se 1-x When x is selected from 0 to 1; when the material of the phase change material layer is Ge x Sb y Te 1-x-y ,Ge x Se y Te 1-x-y When x is selected from 0 to 1, y is selected from 0 to 1, and 1-xy is selected from 0 to 1; when the material of the phase change material layer is selected from Ge x Sb y S z Se 1-x-y-z ,Ge x Sb y Se z Te 1-x-y-z , wherein x is selected from 0 to 1, y is selected from 0 to 1, z is selected from 0 to 1, and 1-xyz is selected from 0 to 1; x, y, and z all represent the molar percentage of each element.

[0010] Preferably, the phase change material buffer layer is made of a material selected from aluminum oxide or aluminum nitride.

[0011] Preferably, the undoped optical waveguide is a strip waveguide or a ridge waveguide.

[0012] According to another aspect of the present invention, an application of the optoelectronic device based on phase change material is provided, wherein a positive bias pulse is applied to the optoelectronic device to transform the phase change material from a crystalline state to an amorphous state, and the optoelectronic device is then used as a heater or a waveguide phase shifter.

[0013] According to another aspect of the present invention, there is provided an application of the optoelectronic device based on phase change material, wherein a first positive bias pulse is applied to the optoelectronic device to completely transform the phase change material from a crystalline state to an amorphous state, and then a second positive bias pulse is applied to the optoelectronic device to transform the phase change material from an amorphous state to a crystalline state. At this time, the optoelectronic device is used as an optical attenuator, an optical detector or a waveguide phase shifter, and the voltage of the first positive bias pulse is greater than the voltage of the second positive bias pulse, and the pulse time of the first positive bias pulse is less than the pulse time of the second positive bias pulse.

[0014] Preferably, when the optoelectronic device is used as a photodetector, a negative bias is applied to the photodetector.

[0015] Preferably, the negative bias voltage amplitude is less than 50V.

[0016] In general, the above technical solution conceived by the present invention has the following technical advantages compared with the prior art:

[0017] 1. The present invention provides a multifunctional optoelectronic device based on a phase change material, which has multiple functions. A pulse voltage with a large voltage and a short pulse time is applied to the optoelectronic device to completely transform the phase change material from a crystalline state to an amorphous state. At this time, the optical waveguide is in a low-loss state, and the optoelectronic device can be used as a heater or a waveguide phase shifter; then a pulse voltage with a small voltage and a long pulse time is applied to the optoelectronic device to heat the optoelectronic device to a crystallization temperature, so that the phase change material is partially or completely transformed from an amorphous state to a crystalline state, the optical waveguide is in a high-loss state, and the optoelectronic device can be used as an optical attenuator or a light detector.

[0018] 2. The present invention provides a multifunctional optoelectronic device based on phase change material. When the optoelectronic device is used as a photodetector, the phase change material absorbs light and generates carriers, and a negative bias is applied to the photodetector. Under the action of the internal field and the external voltage, the carriers quickly separate photogenerated electrons and holes, shorten the drift time of the carriers, and thus draw a photocurrent from the electrode. The negative bias significantly optimizes the performance of the photodetector by enhancing the separation and collection efficiency of photogenerated carriers, improving the response speed, and reducing the capacitance.

[0019] 3. The reconfigurable multifunctional optoelectronic device based on phase change material provided by the present invention has a reconfigurable function compared to ordinary detectors. Ordinary detectors will absorb almost all incident light to generate current, while the optoelectronic device of the present invention, when high-response optical power detection is required, the optoelectronic device operates in a high light loss state; when low-response optical power detection is required, the optoelectronic device operates in a low light loss state. The state of the phase change material can be switched to avoid affecting the transmission of optical power, thereby realizing high-loss and low-loss switching of the optoelectronic device, and the integrated electrode structure has the unique function of integrated detection and adjustment.

[0020] 4. The reconfigurable multifunctional optoelectronic device based on phase change material provided by the present invention controls the transmission of light through the on-chip optical waveguide structure, is compatible with CMOS process, and has the advantage of high integration. In particular, the integration of phase change material does not change the CMOS front-end process, and the phase change material is deposited only after the back-end process is completed, which has the advantage of low cost.

[0021] 5. The reconfigurable multifunctional optoelectronic device based on phase change material provided by the present invention has the function of monitoring phase change material. The detection loss, responsiveness, dark current and other characteristics of the optoelectronic device are strongly correlated with the crystallization degree of the phase change material, film defects, etc. Therefore, the photoelectric characteristics of the optoelectronic device can be used to assist in the identification of the film state by monitoring the photoelectric characteristics of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 An optoelectronic device based on phase change material is provided in Example 1 of the present invention.

[0023] Figure 2 This is a temperature distribution diagram of an optoelectronic device based on a phase change material provided in Example 1 of the present invention when the forward bias voltage is 4V.

[0024] Figure 3 An optoelectronic device based on phase change material is provided in Example 2 of the present invention.

[0025] Figure 4 An optoelectronic device based on phase change material is provided in Example 3 of the present invention.

[0026] In the figure: 1, substrate layer; 2, lower cladding layer; 3, optical waveguide; 31, P-type doped waveguide; 32, N-type doped waveguide; 33, undoped waveguide; 34, phase change material layer; 35, phase change material buffer layer; 4, upper cladding layer; 51, first metal electrode; 52, second metal electrode. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0028] Example 1

[0029] like Figure 1 As shown, a phase-change based optoelectronic device, the substrate layer 1 is silicon, the lower cladding layer 2 is silicon dioxide; the optical waveguide 3 is a silicon layer, the optical waveguide 3 includes a P-type doped waveguide 31, an N-type doped waveguide 32, and an undoped waveguide 33, the two sides of the optical waveguide 3 are partially etched to form a ridge waveguide, the two sides of the optical waveguide 3 are respectively a P-type doped waveguide 31 and an N-type doped waveguide 32, and the middle ridge region is not doped, which is an undoped waveguide 33, thereby forming a PIN junction. A phase change material layer 34 is covered near the ridge region, and the phase change material is a germanium antimony selenium tellurium alloy (GSST), wherein the ratio of the number of atoms of germanium, antimony, selenium, and tellurium is 2:2:4:1. A phase change material buffer layer 35 is covered above the phase change material, and the material of the phase change material buffer layer 35 is aluminum oxide, which is used to protect the phase change material layer 34 and prevent the oxidation of the phase change material layer 34. The upper cladding layer 4 is silicon dioxide, the first metal electrode 51 contacts the P-type doped waveguide 31, and the second metal electrode 52 contacts the N-type doped waveguide 32. The first metal electrode 51 and the second metal electrode 52 can be led out to the outside to facilitate connection with the peripheral bias circuit.

[0030] The method for manufacturing the optoelectronic device based on phase change is to first prepare an SOI (silicon material loaded on an insulating substrate) wafer, photolithography to form a silicon ridge waveguide, and ion implantation at both ends of the ridge waveguide to form a PIN junction. Subsequently, the upper cladding layer 4 of silicon dioxide is deposited and polished for flattening. Then, the electrode area is opened, the silicon oxide upper cladding layer 4 is selectively etched until the silicon waveguide, and then the first metal electrode 51 and the second metal electrode 52 are deposited to fill the through hole, forming a good contact between the first metal electrode 51, the second metal electrode 52 and the doped silicon waveguide. At this time, the silicon oxide upper cladding layer 4 is selectively etched again to the vicinity of the ridge waveguide, and then the phase change material layer 34 is deposited, and then the phase change material buffer layer 35 is deposited to form an enclosure and coverage for the phase change material.

[0031] When the first positive bias pulse is applied to the optoelectronic device, the pulse voltage is 5V and the pulse time is 200ns, the phase change material is completely transformed from the crystalline state to the amorphous state, which can be used as a heater for the phase change material. When the positive bias is applied, the voltage applied to the P-type semiconductor is greater than the voltage applied to the N-type semiconductor, and the PIN junction current generates Joule heat after passing through. According to simulation, when the P-type and N-type doping concentrations are 1E20 / cm 3 When the width of the undoped region 33 is 700 nm, the applied voltage is 4 V, the thickness of the phase change material layer 34 is 50 nm, and the temperature of the phase change material layer 34 region can reach 700° C. Figure 2 The crystallization temperature of the phase change material GSST is 250°C, and the amorphization temperature is 630°C. By adding a positive bias electric pulse to the metal electrode, the complete conversion between the crystalline and amorphous states of the phase change material can be achieved.

[0032] When the optoelectronic device changes the crystallization degree through the positive bias pulse voltage, it can be used as a waveguide phase shifter. When the wavelength of light is 1550nm, the refractive index of the amorphous state of GSST is 3.326+0.001i, and the refractive index of the crystalline state is 2.083+0.35i. The phase change material has a large refractive index difference between the crystalline state and the amorphous state. According to the phase shift formula (where λ represents the wavelength of light, Δn represents the change in refractive index, and L represents the length of the phase change material), so a phase shift much larger than 2π can be introduced by changing its degree of crystallization.

[0033] A second positive bias pulse is applied to the optoelectronic device, the pulse voltage is 2V, and the pulse time is 0.1ms, so that the phase change material is converted from an amorphous state to a crystalline state. At this time, the optoelectronic device is used as a photodetector or a light attenuator. When the optoelectronic device is used as a photodetector, a negative bias is applied to the photodetector, and the P-terminal electrode of the PIN junction is connected to 0V and the N-terminal voltage is 3V. Since the PIN junction is in a negative bias state, the photogenerated carriers are separated from each other under the action of the built-in electric field and the external bias, and are collected by the electrodes at both ends to form a photocurrent. This photocurrent is related to the loss of the phase change material. The greater the material loss, the greater the photocurrent generated by the optical power in the waveguide. According to simulation, the loss of the phase change material GSST in the amorphous state is 0.04dB / um, and the loss in the crystalline state is 1.2dB / um. The loss contrast is very high and it can be used as a photodetector. Therefore, through the second positive bias pulse, the phase change material can be partially or completely transformed from the amorphous state to the crystalline state. By switching the state of the phase change material, the photodetector can switch between high loss and low loss, and even realize a transparent detector. Compared with the forward bias state, the transit time of the photogenerated carriers under the reverse bias voltage is shorter, and the depletion region capacitance of the photodiode is smaller, which can bring a larger photoelectric response bandwidth.

[0034] Example 2

[0035] like Figure 3As shown, different from Example 1, the structure of the optoelectronic device based on phase change material is specifically as follows: from bottom to top, it includes a substrate layer 1, a lower cladding layer 2, an optical waveguide 3, a phase change material buffer layer 35, and an upper cladding layer 4, the optical waveguide 3 includes a P-type doped waveguide 31, an N-type doped waveguide 32, and an undoped waveguide 33, the two ends of the optical waveguide 3 are respectively a P-type doped waveguide 31 and an N-type doped waveguide 32, the middle area is an undoped waveguide 33, the undoped waveguide 33 is embedded with a phase change material layer 34, the top of the phase change material layer 34 is exposed after etching, and the top of the phase change material layer 34 covers the phase change material buffer layer 35; the upper parts of the P-type doped waveguide 31 and the N-type doped waveguide 32 are respectively connected to the first metal electrode 51 and the second metal electrode 52, and the thickness of the upper cladding layer 4 is less than the thickness of the first metal electrode 51 and the second metal electrode 52.

[0036] The phase change material layer (34) uses a germanium antimony tellurium alloy (GST), wherein the ratio of the number of germanium, antimony and tellurium atoms is 2:2:5, and the band gaps of GST in the amorphous state and the crystalline state are 0.8 eV and 0.5 eV respectively. A narrower band gap will lead to stronger absorption of light, so that the light absorption length of the detector is shorter, the detector size can be smaller, and the response is higher.

[0037] The method for manufacturing the optoelectronic device based on phase change is as follows: in order to make the phase change material layer 34 overlap more with the optical waveguide 3 and increase the efficiency of light absorption to generate carriers, a groove is etched in the undoped waveguide 33, and a phase change material is deposited in the groove by atomic layer deposition to form a phase change material layer 3-4. The atomic layer deposition method can reduce interface defects, improve detector performance, and reduce the dark current of the detector. Then, a phase change material buffer layer 35 made of aluminum oxide is covered.

[0038] Example 3

[0039] like Figure 4As shown, different from Example 1, the structure of the optoelectronic device based on phase change material is specifically as follows: from bottom to top, it includes a base layer 1, a lower cladding layer 2, an undoped optical waveguide 33, a phase change material layer 34, and a phase change material buffer layer 35, wherein the lower cladding layer 2 completely covers the bottom layer 1, the undoped optical waveguide 33 completely covers the lower cladding layer 2, the phase change material layer 34 covers the middle area of ​​the undoped optical waveguide 33, the edges around the undoped optical waveguide 33 are not covered by the phase change material layer 34, and the inner part of the phase change material layer 34 The two ends are embedded with a P-type doped waveguide 31 and an N-type doped waveguide 32 at intervals, the two ends of the top of the phase change material layer 34 are respectively connected to the first metal electrode 51 and the second metal electrode 52, the phase change material buffer layer 35 covers the area of ​​the phase change material layer 34 not covered by the first metal electrode 51 and the second metal electrode 52, and the surfaces not covered by the undoped optical waveguide 33, the phase change material layer 34, and the phase change material buffer layer 35 are all covered with an upper cladding layer 4, and the thickness of the upper cladding layer 4 is less than the thickness of the first metal electrode 51 and the second metal electrode 52.

[0040] Different from the first embodiment, the material of the phase change material layer (34) is SbS or SbSe, antimony sulfide can be used for the detection of visible light, antimony selenide can be used for the detection of near-infrared light, and the optical waveguide 3 is a silicon nitride waveguide. Ion implantation is performed directly in the phase change material region, the first metal electrode 51 and the second metal electrode 52 are in contact with the phase change material layer 34 to form an electrical connection, the phase change material layer 34 and the silicon nitride optical waveguide 3 below are coupled to each other, and the light field is guided from the silicon nitride to the phase change material layer 34, the phase change material absorbs light power, generates photogenerated carriers, and the carriers are separated in the phase change material to form a photocurrent.

[0041] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An optoelectronic device based on phase change material, characterized in that: The structure is specifically as follows: from bottom to top, it includes a base layer (1), a lower cladding layer (2), an optical waveguide (3), a phase change material layer (34), and a phase change material buffer layer (35); the optical waveguide (3) includes a P-type doped waveguide (31), an N-type doped waveguide (32), and an undoped waveguide (33); the P-type doped waveguide (31) and the N-type doped waveguide (32) are respectively located at two ends of the undoped waveguide (33); the phase change material layer (34) covers the undoped waveguide (33); the phase change material The buffer layer (35) completely covers the phase change material layer (34); the tops of the P-type doped waveguide (31) and the N-type doped waveguide (32) are respectively connected to a first metal electrode (51) and a second metal electrode (52); the P-type doped waveguide (31), the N-type doped waveguide (32), the undoped waveguide (33), and the surfaces not covered by the phase change material buffer layer (35) are all covered by an upper cladding layer (4); the tops of the first metal electrode (51) and the second metal electrode (52) are exposed from the upper cladding layer (4).

2. An optoelectronic device based on phase change material, characterized in that: The structure is specifically as follows: from bottom to top, it includes a base layer (1), a lower cladding layer (2), an optical waveguide (3), and a phase change material buffer layer (35); the optical waveguide (3) includes a P-type doped waveguide (31), an N-type doped waveguide (32), and an undoped waveguide (33); the P-type doped waveguide (31) and the N-type doped waveguide (32) are respectively located at two ends of the undoped waveguide (33); a groove is provided on the top of the undoped waveguide (33); the groove is filled with a phase change material layer (34); the phase change material The top of the layer (34) is covered with the phase change material buffer layer (35); the upper parts of the P-type doped waveguide (31) and the N-type doped waveguide (32) are respectively connected to the first metal electrode (51) and the second metal electrode (52); the P-type doped waveguide (31), the N-type doped waveguide (32), the undoped waveguide (33), and the uncovered surfaces of the phase change material buffer layer (35) are all covered by the upper cladding layer (4); the tops of the first metal electrode (51) and the second metal electrode (52) are exposed from the upper cladding layer (4).

3. An optoelectronic device based on phase change material, characterized in that: The structure is specifically as follows: from bottom to top, it includes a base layer (1), a lower cladding layer (2), an undoped optical waveguide (33), a phase change material layer (34), and a phase change material buffer layer (35); the phase change material layer (34) covers the middle area of ​​the undoped optical waveguide (33); the edges of the undoped optical waveguide (33) are not covered by the phase change material layer (34); the two ends of the interior of the phase change material layer (34) are respectively embedded with a P-type doped waveguide (31) and an N-type doped waveguide (32); the phase change material layer (35) is The two ends of the top of the phase-change material layer (34) are respectively connected to the first metal electrode (51) and the second metal electrode (52), the phase-change material buffer layer (35) covers the area of ​​the top of the phase-change material layer (34) that is not covered by the first metal electrode (51) and the second metal electrode (52), the undoped optical waveguide (33), the phase-change material layer (34) and the surface not covered by the phase-change material buffer layer (35) are all covered by the upper cladding layer (4), and the tops of the first metal electrode (51) and the second metal electrode (52) are exposed from the upper cladding layer (4).

4. An optoelectronic device based on a phase change material according to any one of claims 1 to 3, characterized in that: The material of the phase change material layer (34) is selected from Ge x Te 1-x , Sb x Se 1-x , Sb x S 1-x , Sb x Te 1-x ,Ge x S 1-x ,Ge x Se 1-x ,Ge x Sb y Te 1-x-y ,Ge x Se y Te 1-x-y ,Ge x Sb y S z Se 1-x-y-z ,Ge x Sb y Se z Te 1-x-y-z When the material of the phase change material layer (34) is Ge x Te 1-x , Sb x Se 1-x , Sb x S 1-x , Sb x Te 1-x ,Ge x S 1-x ,Ge x Se 1-x When x is selected from 0 to 1; when the material of the phase change material layer (34) is Ge x Sb y Te 1-x-y ,Ge x Se y Te 1-x-y When x is selected from 0 to 1, y is selected from 0 to 1, and 1-xy is selected from 0 to 1; when the material of the phase change material layer (34) is selected from Ge x Sb y S z Se 1-x-y-z ,Ge x Sb y Se z Te 1-x-y-z , wherein x is selected from 0 to 1, y is selected from 0 to 1, z is selected from 0 to 1, and 1-xyz is selected from 0 to 1; x, y, and z all represent the molar percentage of each element.

5. An optoelectronic device based on a phase change material according to any one of claims 1 to 3, characterized in that: The material of the phase change material buffer layer (35) is selected from aluminum oxide or aluminum nitride.

6. An optoelectronic device based on a phase change material according to any one of claims 1 to 3, characterized in that: The undoped optical waveguide (33) is a strip waveguide or a ridge waveguide.

7. The use of an optoelectronic device based on a phase change material according to any one of claims 1 to 6, characterized in that: A positive bias pulse is applied to the optoelectronic device to transform the phase change material from a crystalline state to an amorphous state. At this time, the optoelectronic device is used as a heater or a waveguide phase shifter.

8. The use of an optoelectronic device based on a phase change material according to any one of claims 1 to 6, characterized in that: A first positive bias pulse is applied to the optoelectronic device to completely transform the phase change material from a crystalline state to an amorphous state, and then a second positive bias pulse is applied to the optoelectronic device to transform the phase change material from an amorphous state to a crystalline state. At this time, the optoelectronic device is used as an optical attenuator, an optical detector or a waveguide phase shifter, and the voltage of the first positive bias pulse is greater than the voltage of the second positive bias pulse, and the pulse time of the first positive bias pulse is less than the pulse time of the second positive bias pulse.

9. The use of the optoelectronic device based on phase change material according to claim 8, characterized in that: When the optoelectronic device is used as a photodetector, a negative bias is applied to the photodetector.

10. The use of an optoelectronic device based on a phase change material according to claim 9, characterized in that: The negative bias voltage amplitude is below 50V.

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