Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. The photoelectric device comprises an anode, a functional layer and a cathode which are stacked. The material of the functional layer comprises a doped corrosion inhibitor, and / or a first corrosion inhibition layer is arranged between the anode and the functional layer, and the material of the first corrosion inhibition layer comprises a first interface corrosion inhibitor; the doping corrosion inhibitor and the first interface corrosion inhibitor respectively comprise one or more of a thiazole compound and a cyclic sulfydryl compound. The photoelectric device provided by the invention is good in corrosion resistance.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to an optoelectronic device, a preparation method thereof, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to their excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the field of display technologies. QLEDs have the advantages of saturated emission light color and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields. In recent years, they have become strong competitors of OLEDs.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a hole transport layer, an active layer, an electron transport layer, an electron injection layer, and a cathode. Under the action of an electric field, the holes generated by the anode and the electrons generated by the cathode of the light-emitting diode move, and are respectively injected into the hole transport layer and the electron transport layer, and finally migrate to the active layer. When the two meet in the active layer, energy excitons are generated, which excite the light-emitting molecules to finally generate visible light. Quantum dots are used as the material of the active layer in QLEDs. However, the film layers in optoelectronic devices are easily corroded by water oxygen, electrochemistry, etc., resulting in poor optoelectronic performance of the optoelectronic devices.

[0004] Therefore, the problem of easy corrosion of optoelectronic devices needs to be further improved. Summary of the Invention

[0005] In view of this, the present application provides an optoelectronic device, a preparation method thereof, and a display device.

[0006] An optoelectronic device according to an embodiment of the present application includes an anode, a functional layer, and a cathode which are stacked.

[0007] The material of the functional layer includes a doped corrosion inhibitor, and / or, a first corrosion inhibition layer is provided between the anode and the functional layer, and the material of the first corrosion inhibition layer includes a first interface corrosion inhibitor; the doped corrosion inhibitor and the first interface corrosion inhibitor respectively include one or more of thiazole compounds and cyclic mercapto compounds.

[0008] Correspondingly, an embodiment of the present application further provides a preparation method of an optoelectronic device. The optoelectronic device includes a normal-type optoelectronic device or an inverted-type optoelectronic device. The preparation method of the inverted-type optoelectronic device includes:

[0009] Providing a prefabricated optoelectronic device, where the prefabricated optoelectronic device includes a cathode;

[0010] A functional layer is formed on the cathode, and the material of the functional layer includes a doped corrosion inhibitor; and / or, a first corrosion inhibition layer is formed on the functional layer, and the material of the first corrosion inhibition layer includes a first interfacial corrosion inhibitor; the doped corrosion inhibitor and the first interfacial corrosion inhibitor each include one or more of thiazole compounds and cyclic mercapto compounds;

[0011] An anode is formed on the functional layer or the first corrosion inhibition layer to obtain an optoelectronic device;

[0012] Alternatively, the method for preparing the forward-type optoelectronic device includes:

[0013] Provide a preform of an optoelectronic device, and the preform of the optoelectronic device includes an anode;

[0014] A functional layer is formed on the anode, and the material of the functional layer includes a doped corrosion inhibitor; the doped corrosion inhibitor includes one or more of thiazole compounds and cyclic mercapto compounds;

[0015] A cathode is formed on the functional layer to obtain an optoelectronic device.

[0016] Correspondingly, an embodiment of the present application further provides a display device, and the display device includes the above optoelectronic device, or includes an optoelectronic device prepared by the above preparation method.

[0017] The optoelectronic device provided by the present application can effectively improve the corrosion resistance of the optoelectronic device. Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0019] Figure 1 It is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0020] Figure 2 It is a schematic structural diagram of another optoelectronic device provided by an embodiment of the present application;

[0021] Figure 3 It is a schematic structural diagram of another optoelectronic device provided by an embodiment of the present application;

[0022] Figure 4 It is a flowchart of a method for preparing an optoelectronic device provided by an embodiment of the present application;

[0023] Figure 5 It is a flowchart of a method for preparing another optoelectronic device provided by an embodiment of the present application.

[0024] Reference Signs:

[0025] Anode 10; hole functional layer 20; active layer 30; electron functional layer 40; cathode 50; first corrosion inhibition layer 60; second corrosion inhibition layer 70. Detailed Embodiments

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only for explaining and illustrating the present application, and are not used to limit the present application.

[0027] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0028] In the present application, "and / or" describes the association relationship of associated objects and indicates that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. Where A and B may be singular or plural.

[0029] In the present application, "at least one" means one or more, and "a plurality" means two or more. "One or several", "at least one (item) below" or similar expressions refer to any combination of these items, including any combination of single item (item) or plural items (items). For example, "at least one (item) of a, b, or c", or, "at least one (item) of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0030] The various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and individual numbers within the range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0031] In a normal optoelectronic device structure, metals such as Ag and Al are usually used as the cathode. However, metal electrodes are prone to electrochemical reactions with hydroxyl groups in materials such as ZnO, which serve as the electron functional layer, thereby triggering cathode corrosion, resulting in a decrease in the external quantum efficiency and brightness of the optoelectronic device. Moreover, due to the long-term cathode electrochemical corrosion leading to a decrease in electron injection on the cathode side, the carrier balance of the optoelectronic device deteriorates, and the storage stability of the optoelectronic device is severely challenged. In an inverted optoelectronic device structure, metals such as Ag and Al are usually used as the anode. Since hole functional layer materials such as PEDOT:PSS are prone to absorbing water vapor in the air, the water molecule-assisted electrode electrochemical reaction between the hole functional layer and the anode interface is aggravated, resulting in a decrease in the external quantum efficiency and brightness of the optoelectronic device. Moreover, due to the long-term anode electrochemical corrosion leading to a decrease in hole injection on the anode side, the carrier balance of the device deteriorates, and the storage stability of the device is severely challenged. In addition, during the long-term storage of the device, water and oxygen in the environment penetrate into the carrier functional layer and the active layer, resulting in a decrease in the carrier transport ability of the carrier functional layer and severe exciton quenching in the active layer, thereby causing the optoelectronic device to fail after long-term storage.

[0032] Generally, by using transparent conductive thin films such as ITO and IZO, which are themselves metal oxides, as metal electrodes, the electrochemical corrosion of optoelectronic devices can be alleviated to a certain extent. However, the deposition of metal oxide electrodes requires a sputtering coating process, which increases the preparation cost, and the composition control process is complex and has poor repeatability. In addition, the encapsulation technology using acidic encapsulation glue or resin encapsulation glue can, to a certain extent, block the intrusion of water vapor at the interface between the carrier functional layer and the electrode, thereby weakening the electrochemical corrosion process, but it cannot solve the problem of electrochemical corrosion of metal electrodes in optoelectronic devices from the source. In addition to the anti-corrosion treatment of metal electrodes, suitable anti-water and oxygen corrosion methods also need to be found for the carrier functional layer and the active layer in optoelectronic devices to ensure the high-performance transport ability of the carrier functional layer during the long-term storage process of the device and to avoid severe exciton quenching in the active layer.

[0033] The technical solution of this application is as follows:

[0034] In a first aspect, please refer to Figures 1 to 2 , an optoelectronic device provided by an embodiment of this application includes an anode 10, a functional layer, and a cathode 50 that are stacked;

[0035] The material of the functional layer includes a doped corrosion inhibitor, and / or, a first corrosion inhibition layer 60 is provided between the anode 10 and the functional layer, and the material of the first corrosion inhibition layer 60 includes a first interfacial corrosion inhibitor; the doped corrosion inhibitor and the first interfacial corrosion inhibitor respectively include one or more of thiazole compounds and cyclic mercapto compounds.

[0036] In the optoelectronic device provided by this application, the material of the functional layer between the anode 10 and the cathode 50 includes a doped corrosion inhibitor and / or a first corrosion inhibition layer 60 is provided between the functional layer and the anode 10. The nitrogen atom in the thiazole compound and the sulfur atom in the cyclic mercapto compound in the doped corrosion inhibitor can passivate the surface defects of the functional layer, thereby enhancing the surface quality of the functional layer, and further improving the water and oxygen corrosion resistance of the functional layer and the optoelectronic performance of the optoelectronic device; the cyclic structure in the cyclic mercapto compound can enhance the passivation effect of the cyclic mercapto compound. The interfacial corrosion inhibitor in the first corrosion inhibition layer 60 can have a coordination effect with the anode 10, alleviating the electrochemical corrosion at the interface between the functional layer and the anode 10. The N atom in the thiazolyl group and the S atom in the outer ring mercapto group in the interfacial corrosion inhibitor can have a strong coordination effect with the anode 10, thereby increasing the corrosion potential of the anode 10 and reducing the corrosion current; the cyclic structure in the cyclic mercapto compound can strengthen the coordination effect between the cyclic mercapto compound and the anode 10. The presence of the first corrosion inhibition layer 60 can also block the direct contact between the functional layer 40 and the anode 10, improving the brightness and long-term storage stability of the optoelectronic device. In addition, there are many types of corrosion inhibitors provided by this application, with a wide selection, convenient synthesis, and low price, which is conducive to large-scale application.

[0037] In some embodiments, the structural formula of the thiazole compound is shown in formula (Ⅰ):

[0038]

[0039] It can be understood that R1, R2, and R3 can be selected from any chemical element, group, etc.

[0040] Exemplarily, in some embodiments, R1, R2, and R3 are respectively and independently selected from hydrogen, deuterium, halogen, cyano, hydroxyl, carboxyl, aldehyde, nitro, substituted or unsubstituted C1-C 20 alkyl, substituted or unsubstituted C1-C 20 alkoxy, substituted or unsubstituted C1-C 20 acyloxy, substituted or unsubstituted C1-C 20an alkoxycarbonyl group, a substituted or unsubstituted C6-C 20 a first aryl group, a substituted or unsubstituted C2-C 20 an alkenyl group, a substituted or unsubstituted C2-C 20 one or more of an alkynyl group.

[0041] Further, R1, R2, and R3 are each independently selected from hydrogen, deuterium, halogen, cyano, hydroxy, carboxy, aldehyde, nitro, a substituted or unsubstituted C5-C 10 an alkyl group, a substituted or unsubstituted C5-C 10 an alkoxy group, a substituted or unsubstituted C5-C 10 an acyloxy group, a substituted or unsubstituted C5-C 10 an alkoxycarbonyl group, a substituted or unsubstituted C 10 -C 15 a first aryl group, a substituted or unsubstituted C5-C 10 an alkenyl group, a substituted or unsubstituted C5-C 10 one or more of an alkynyl group.

[0042] The halogen includes one or more of fluorine, chlorine, bromine, and iodine.

[0043] The alkyl group includes one or more of methyl, ethyl, isopropyl, and tert-butyl.

[0044] The alkoxy group includes one or more of methoxy, ethoxy, and propoxy.

[0045] The acyloxy group includes one or more of formyloxy, acetoxy, propionyloxy, butyryloxy, octanoyloxy, palmitoyloxy, and stearoyloxy.

[0046] The alkoxycarbonyl group includes one or more of methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, butoxycarbonyl, octyloxycarbonyl, palmitoyloxycarbonyl, and stearoyloxycarbonyl.

[0047] The first aryl group includes one or more of phenyl, p-tolyl, p-nitrophenyl, o-methoxyphenyl, m-methoxyphenyl, p-methoxyphenyl, and p-nitromethoxyphenyl.

[0048] The alkenyl group includes one or more of vinyl, propenyl, and butenyl.

[0049] The alkynyl group includes one or more of ethynyl, propynyl, pentynyl, and heptynyl.

[0050] The substituents of the alkyl, alkoxy, acyloxy, alkoxycarbonyl, first aryl, alkenyl, and alkynyl groups each independently include one or more of -NH, -F, -Cl, -Br, -I, -OH, -COOH, -NO, -SOH, -CHO, -SH, and -CN.

[0051] In some embodiments, the thiazole compounds include one or more of 2-mercapto thiazole (CAS: 82358-09-6), 2-mercaptobenzothiazole (CAS: 149-30-4), 2-mercapto-6-nitrobenzothiazole (CAS: 4845-58-3), 2-amino thiazole (CAS: 288-16-4), 2-propyl thiazole (CAS: 17626-75-4), 2-acetyl thiazole (CAS: 24295-03-2), thioacetate thiazole (CAS: 3034-53-5), 5-bromo thiazole (CAS: 3034-55-7), 2-methylthio thiazole (CAS: 5053-24-7), 2-amino-4-phenyl thiazole (CAS: 2010-06-2), 5-methyl thiazole (CAS: 3581-89-3), 2-aminobenzothiazole (CAS: 136-95-8), 2-bromobenzothiazole (CAS: 2516-40-7), 2,6-dimethylbenzothiazole (CAS: 2941-7-11), 6-nitrobenzothiazole (CAS: 2942-06-5), and 2-hydrazinobenzothiazole (CAS: 615-21-4).

[0052] In some embodiments, the chemical general formula of the cyclic mercapto compounds is Ar-SH, where Ar is selected from a substituted or unsubstituted second aryl group having 6 to 60 carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 60 ring atoms, or a combination thereof.

[0053] In some embodiments, Ar is selected from a substituted or unsubstituted second aryl group having 6 to 50 carbon atoms, a substituted or unsubstituted heterocyclic group having 6 to 50 ring atoms, or a combination thereof.

[0054] In some embodiments, Ar is selected from a substituted or unsubstituted second aryl group having 10 to 40 carbon atoms, a substituted or unsubstituted heterocyclic group having 10 to 40 ring atoms, or a combination thereof.

[0055] In some embodiments, Ar is selected from a substituted or unsubstituted second aryl group having 20 to 30 carbon atoms, a substituted or unsubstituted heterocyclic group having 20 to 30 ring atoms, or a combination thereof.

[0056] In some embodiments, the substituents in the second aryl group and the heterocyclic group each independently include one or more of a hydrocarbon group, a halogen group, -OH, -OCH3, -NO2, -ONHNH2, -NHNH2, -NH2, -SH, -CN, -CHO, -SO3H; the hydrocarbon group includes one or more of an alkyl group, an alkenyl group, and an alkynyl group, the alkyl group includes one or more of a methyl group, an ethyl group, a propyl group, and a butyl group, the alkenyl group includes one or more of a vinyl group, a propenyl group, and a butenyl group, the alkynyl group includes one or more of an ethynyl group, a propynyl group, and a butynyl group; the halogen group includes one or more of -F, -Cl, -Br, and -I.

[0057] In some embodiments, the heteroatoms in the heterocyclic group include one or more of O, P, N, and S.

[0058] In some embodiments, the heterocyclic group includes one or more of a thiazolyl group, a thiophenyl group, a furyl group, a pyrrolyl group, a pyridyl group, a pyrimidinyl group, an imidazolyl group, an oxazolyl group, a pyrazinyl group, an indolyl group, a quinolinyl group, a pteridinyl group, and an acridinyl group.

[0059] In some embodiments, the cyclic mercapto compounds include one or more of 2-mercapto thiazole (CAS: 82358-09-6), 2-mercapto benzothiazole (CAS: 149-30-4), 2-mercapto-6-nitrobenzothiazole (CAS: 4845-58-3), 2-mercapto cytosine (CAS: 333-49-3), 2-mercapto pyrimidine (CAS: 1450-85-7), 2-mercapto nicotinic acid (CAS: 38521-46-9), 2-mercapto benzimidazole carboxylic acid (CAS: 58089-25-1), 2-mercapto pyrazine (CAS: 38521-06-1), 2-mercapto thiazoline (CAS: 96-53-7), 4,6-dimethyl-2-mercapto pyrimidine (CAS: 22325-27-5), 3-mercapto indole (CAS: 480-94-4), 2-mercapto pyrimidine-3-carbonitrile (CAS: 52505-45-0), 2-mercapto imidazole (CAS: 872-35-5), 2-mercapto benzimidazole (CAS: 583-39-1), 4-mercapto pyridine (CAS: 4556-23-4), 2-mercapto pyridine (CAS: 2637-34-5), 2,4-dimercapto pyrimidine (CAS: 2001-93-6), 3-mercapto-1,2,4-triazole (CAS: 3179-31-5), 2-mercapto-1,3,4-thiadiazole (CAS: 18686-82-3), and 2-mercapto-1-methyl imidazole (CAS: 60-56-0).

[0060] It can be understood that some compounds such as 2-mercapto-thiazole (CAS: 82358-09-6), 2-mercapto-benzothiazole (CAS: 149-30-4), and 2-mercapto-6-nitrobenzothiazole (CAS: 4845-58-3) contain both a thiazole group and an outer-ring mercapto group. In the present application, such compounds belong to both thiazole compounds and cyclic mercapto compounds.

[0061] In some embodiments, when the doped corrosion inhibitor or the first interface corrosion inhibitor simultaneously includes a thiazole compound and a cyclic mercapto compound, the molar ratio of the thiazole compound to the cyclic mercapto compound is 1:(1 - 3), and for example, it can be 1:1.2, 1:1.5, 1:1.8, 1:2, 1:2.2, 1:2.5, 1:2.8, etc.

[0062] In some embodiments, the functional layer includes one or more of a hole functional layer 20, an active layer 30, and an electron functional layer 40 sequentially arranged in the direction from the anode 10 to the cathode 50; the doped corrosion inhibitor includes one or more of a first corrosion inhibitor, a second corrosion inhibitor, and a third corrosion inhibitor.

[0063] In some embodiments, the material of the hole functional layer 20 includes a hole functional material and a first corrosion inhibitor.

[0064] In some embodiments, the material of the active layer 30 includes an active material and a second corrosion inhibitor.

[0065] In some embodiments, the material of the electron functional layer 40 includes an electron functional material and a third corrosion inhibitor.

[0066] In some embodiments, the first corrosion inhibitor, the second corrosion inhibitor, and the third corrosion inhibitor are the same or different.

[0067] The hole functional layer 20 includes one or more of a hole injection layer and a hole transport layer.

[0068] The electron functional layer 40 includes one or more of an electron injection layer and an electron transport layer.

[0069] In some embodiments, the optoelectronic device is a normal-type optoelectronic device or an inverted-type optoelectronic device.

[0070] In some embodiments, when the optoelectronic device is a normal-type optoelectronic device, in the electron functional layer 40, the mass ratio of the electron functional material to the third corrosion inhibitor is (88 - 92):(8 - 12), for example, it can be 91.5:8.5, 91:9, 90.5:9.5, 90:10, 89.5:10.5, 89:11, 88.5:11.5, etc.; in the active layer 30, the mass ratio of the active material to the second corrosion inhibitor is (97 - 99):(1 - 3), for example, it can be 98.8:1.2, 98.5:1.5, 98.2:1.8, 98:2, 97.8:2.2, 97.5:2.5, 97.2:2.8, etc.; in the hole functional layer 20, the mass ratio of the hole functional material to the first corrosion inhibitor is (97 - 99):(1 - 3), for example, it can be 98.8:1.2, 98.5:1.5, 98.2:1.8, 98:2, 97.8:2.2, 97.5:2.5, 97.2:2.8, etc.

[0071] In some other embodiments, when the optoelectronic device is an inverted-type optoelectronic device, in the hole functional layer 20, the mass ratio of the hole functional material to the first corrosion inhibitor is (88 - 92):(8 - 12), for example, it can be 91.5:8.5, 91:9, 90.5:9.5, 90:10, 89.5:10.5, 89:11, 88.5:11.5, etc.; and / or, in the active layer 30, the mass ratio of the active material to the second corrosion inhibitor is (97 - 99):(1 - 3), for example, it can be 98.8:1.2, 98.5:1.5, 98.2:1.8, 98:2, 97.8:2.2, 97.5:2.5, 97.2:2.8, etc.; and / or, in the electron functional layer 40, the mass ratio of the electron functional material to the third corrosion inhibitor is (97 - 99):(1 - 3), for example, it can be 98.8:1.2, 98.5:1.5, 98.2:1.8, 98:2, 97.8:2.2, 97.5:2.5, 97.2:2.8, etc.

[0072] It can be understood that the mass fraction of the corrosion inhibitor in the carrier functional layer near the light-emitting side is relatively large. On the one hand, it is beneficial to contact the electrode on the light-emitting side and inhibit the corrosion of the electrode on the light-emitting side. On the other hand, it can effectively block the penetration of water and oxygen through the carrier functional layer on the light-emitting side and cause corrosion of the active layer 30 and the other opposite carrier functional layer.

[0073] It should be noted that when the electron functional layer 40 serves as the carrier functional layer on the light-emitting side, the mass fraction of the corrosion inhibitor is relatively high, and the corrosion inhibitor is a semiconductor with a bias towards the n-type, which can further promote the injection and transmission of electrons.

[0074] The first interface corrosion inhibitor and the doped corrosion inhibitor may be the same or different.

[0075] In some embodiments, the thickness of the first corrosion inhibition layer 60 is 3 nm to 5 nm, and for example, it may be 3.2 nm, 3.5 nm, 3.8 nm, 4 nm, 4.2 nm, 4.5 nm, 4.8 nm, etc. Within this thickness range, the corrosion resistance of the optoelectronic device can be improved, and the hole injection and transport performance of the optoelectronic device can be ensured.

[0076] In some embodiments, referring to Figure 3 , when the optoelectronic device is an inverted device, the material of the functional layer includes a doped corrosion inhibitor, and a second corrosion inhibition layer 70 is further provided between the functional layer and the cathode 50. The material of the second corrosion inhibition layer 70 includes a second interface corrosion inhibitor, and the second interface corrosion inhibitor includes one or more of thiazole compounds and cyclic mercapto compounds.

[0077] For the material of the second interface corrosion inhibitor, refer to the first interface corrosion inhibitor, and for the thickness of the second corrosion inhibition layer 70, refer to the first corrosion inhibition layer, which will not be elaborated here.

[0078] In some embodiments, the anode 10 and the cathode 50 each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a metal oxide electrode or a composite electrode with a metal disposed between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. Among them, " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence.

[0079] It should be noted that when the optoelectronic device contains the first corrosion inhibition layer 60, the material of the anode 10 is preferably one or more of a metal and a metal oxide. The anode 10 containing metal elements is more likely to have a coordination interaction with the corrosion inhibitor to increase the corrosion potential and reduce the corrosion current, thereby improving the brightness and storage stability of the optoelectronic device.

[0080] In some embodiments, the thickness of the anode 10 is 32 nm to 35 nm, and for example, it can be 33 nm, 34 nm, etc.

[0081] In some embodiments, the light transmittance of the anode 10 is greater than or equal to 90%, and for example, it can be 92%, 95%, 98%, etc.

[0082] In some embodiments, the electronic functional layer material includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0083] In some embodiments, the hole functional material includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green active material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose, and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5. The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V. The metal sulfides include one or more of CuS, MoS3, WS3. The metal selenides include one or more of MoSe3, WSe3. The metal nitrides include p-type gallium nitride.

[0084] In some embodiments, the active material is a luminescent material.

[0085] In some embodiments, the active material includes one or more of an organic active material and quantum dots.

[0086] The organic active material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF material, a polymer containing B-N covalent bonds, HLCT material, and Exciplex active material.

[0087] The quantum dots may be selected from, but not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite-type quantum dots.

[0088] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots can be respectively selected from, but not limited to, one or several of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots is one or more layers; the II-VI group compounds can be selected from, but not limited to, one or several of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds can be selected from, but not limited to, one or several of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds can be selected from, but not limited to, one or several of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds can be selected from, but not limited to, one or several of CuInS2, CuInSe2, and AgInS2.

[0089] As an example, the core-shell structure quantum dots can be selected from, but not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the expressions such as CdSe / ZnS above, the " / " indicates that the material after " / " (as the shell layer) coats the material before " / " (as the core layer).

[0090] The general structural formula of the perovskite quantum dots is AMX3, where A is selected from Cs + , CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of them, and X is selected from Cl - , Br - , I - and one or more of them.

[0091] In a second aspect, please refer to Figure 4 , the embodiments of the present application further provide a method for preparing an optoelectronic device, including:

[0092] S11. Provide a preform of the optoelectronic device, and the preform of the optoelectronic device includes a cathode 50;

[0093] S12. Form a functional layer on the cathode 50, and the material of the functional layer includes a doped corrosion inhibitor; and / or, form a first corrosion inhibition layer 60 on the functional layer, and the material of the first corrosion inhibition layer 60 includes a first interface corrosion inhibitor; the doped corrosion inhibitor and the first interface corrosion inhibitor respectively include one or more of thiazole compounds and cyclic mercapto compounds;

[0094] S13. Form an anode 10 on the functional layer or the first corrosion inhibition layer 60 to obtain an optoelectronic device.

[0095] It can be understood that the inverted optoelectronic device obtained by the above preparation method is referred to Figure 5 , the present application also provides a preparation method of a normal-configuration optoelectronic device, including:

[0096] S21. Provide a preform of an optoelectronic device, and the preform of the optoelectronic device includes an anode 10;

[0097] S22. Form a functional layer on the anode 10, and the material of the functional layer includes a doped corrosion inhibitor; the doped corrosion inhibitor includes one or more of thiazole compounds and cyclic mercapto compounds;

[0098] S23. Form a cathode 50 on the functional layer to obtain an optoelectronic device.

[0099] In the S12:

[0100] In some embodiments, forming the functional layer on the cathode 50 includes forming one or more of an electron functional layer 40, an active layer 30, and a hole functional layer 20 on the cathode 50 in sequence; the doped corrosion inhibitor includes one or more of a third corrosion inhibitor, a second corrosion inhibitor, and a first corrosion inhibitor.

[0101] Correspondingly, in the S22, forming the functional layer on the anode 10 includes forming one or more of a hole functional layer 20, an active layer 30, and an electron functional layer 40 on the anode 10 in sequence.

[0102] In some embodiments, the method for forming the electron functional layer 40 includes:

[0103] S121. Provide a first mixed solution, and the first mixed solution includes an electron functional material and a third corrosion inhibitor;

[0104] S122. Set the first mixed solution on the cathode 50 or the active layer 30 to form an electron functional layer 40.

[0105] In some embodiments, when preparing the inverted optoelectronic device, in the first mixed solution, the mass ratio of the electron functional material to the third corrosion inhibitor is (97-99):(1-3), and for example, it can be 98.8:1.2, 98.5:1.5, 98.2:1.8, 98:2, 97.8:2.2, 97.5:2.5, 97.2:2.8, etc.

[0106] In some embodiments, when preparing the front-type optoelectronic device, in the first mixed solution, the mass ratio of the electron functional material to the third corrosion inhibitor is (88 to 92):(8 to 12), for example, it can be 91.5:8.5, 91:9, 90.5:9.5, 90:10, 89.5:10.5, 89:11, 88.5:11.5, etc.

[0107] In some embodiments, in the first mixed solution, the mass concentration of the third corrosion inhibitor is 0.1 mg / mL to 0.3 mg / mL, for example, it can be 0.12 mg / mL, 0.15 mg / mL, 0.18 mg / mL, 0.2 mg / mL, 0.22 mg / mL, 0.25 mg / mL, 0.28 mg / mL, etc.

[0108] In some embodiments, the first mixed solution further includes a first solvent.

[0109] In some embodiments, after the first mixed solution is disposed on the cathode 50 or the active layer 30, a first annealing is further included.

[0110] Further, in some embodiments, the temperature of the first annealing is 100 °C to 120 °C, for example, it can be 102 °C, 105 °C, 108 °C, 110 °C, 112 °C, 115 °C, 118 °C, etc.; the time is 10 min to 20 min, for example, it can be 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min, 19 min, etc.

[0111] In some embodiments, the method for forming the active layer 30 includes:

[0112] S123. Provide a second mixed solution, which includes an active material and a second corrosion inhibitor;

[0113] S124. Dispose the second mixed solution on the electron functional layer 40 or the hole functional layer 20 to form the active layer 30.

[0114] In some embodiments, in the second mixed solution, the mass ratio of the active material to the second corrosion inhibitor is (97 to 99):(1 to 3), for example, it can be 98.8:1.2, 98.5:1.5, 98.2:1.8, 98:2, 97.8:2.2, 97.5:2.5, 97.2:2.8.

[0115] In some embodiments, in the second mixed solution, the mass concentration of the second corrosion inhibitor is 0.1 mg / mL to 0.3 mg / mL, and for example, it can be 0.12 mg / mL, 0.15 mg / mL, 0.18 mg / mL, 0.2 mg / mL, 0.22 mg / mL, 0.25 mg / mL, 0.28 mg / mL, etc.

[0116] In some embodiments, the second mixed solution further includes a second solvent.

[0117] In some embodiments, after the second mixed solution is disposed on the electronic functional layer 40 or the hole functional layer 20, a second annealing is further included.

[0118] Further, in some embodiments, the temperature of the second annealing is 80°C to 120°C, and for example, it can be 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 115°C, etc.; the time is 3 min to 10 min, and for example, it can be 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, etc.

[0119] In some embodiments, the method for forming the hole functional layer 20 includes:

[0120] S125. Provide a third mixed solution, which includes a hole functional material and a first corrosion inhibitor;

[0121] S126. Dispose the third mixed solution on the active layer 30 or the anode 10 to form the hole functional layer 20.

[0122] In some embodiments, when preparing the inverted optoelectronic device, in the third mixed solution, the mass ratio of the hole functional material to the first corrosion inhibitor is (88 - 92):(8 - 12), and for example, it can be 91.5:8.5, 91:9, 90.5:9.5, 90:10, 89.5:10.5, 89:11, 88.5:11.5, etc.

[0123] In some embodiments, when preparing the normal - type optoelectronic device, in the third mixed solution, the mass ratio of the hole functional material to the first corrosion inhibitor is (97 - 99):(1 - 3), and for example, it can be 98.8:1.2, 98.5:1.5, 98.2:1.8, 98:2, 97.8:2.2, 97.5:2.5, 97.2:2.8, etc.

[0124] In some embodiments, in the third mixed solution, the mass concentration of the first corrosion inhibitor is 0.8 mg / mL to 1.2 mg / mL, and for example, it can be 0.85 mg / mL, 0.9 mg / mL, 0.95 mg / mL, 1 mg / mL, 1.05 mg / mL, 1.1 mg / mL, 1.15 mg / mL, etc.

[0125] In some embodiments, the third mixed solution further includes a third solvent.

[0126] In some embodiments, after the third mixed solution is disposed on the active layer 30 or the anode 10, a third annealing is further included.

[0127] Further, in some embodiments, the temperature of the third annealing is 100 °C to 150 °C, and for example, it can be 105 °C, 110 °C, 115 °C, 120 °C, 125 °C, 130 °C, 135 °C, 140 °C, 145 °C, etc.; the time is 10 min to 20 min, and for example, it can be 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min, 19 min, etc.

[0128] In some embodiments, the method for forming the first corrosion inhibition layer 60 includes:

[0129] S127. Provide a first corrosion inhibition solution, where the first corrosion inhibition solution includes a first interfacial corrosion inhibitor;

[0130] S128. Dispose the first corrosion inhibition solution on the hole functional layer 20 to form the first corrosion inhibition layer 60.

[0131] In some embodiments, in the first corrosion inhibition solution, the mass concentration of the first interfacial corrosion inhibitor is 1 mg / mL to 5 mg / mL, and for example, it can be 2 mg / mL, 3 mg / mL, 4 mg / mL, etc.

[0132] In some embodiments, the first corrosion inhibition solution further includes a fourth solvent.

[0133] In some embodiments, after the first corrosion inhibition solution is disposed on the hole functional layer 20, a fourth annealing is further included.

[0134] Further, in some embodiments, the temperature of the fourth annealing is 100 °C to 120 °C, and for example, it can be 102 °C, 105 °C, 108 °C, 110 °C, 112 °C, 115 °C, 118 °C, etc.; the time is 3 min to 10 min, and for example, it can be 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, etc.

[0135] The first solvent, the second solvent, the third solvent, and the fourth solvent each independently include a polar solvent. The polar solvent includes an alcohol solvent. The alcohol solvent includes one or more of diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, and glycerol.

[0136] In some embodiments, when fabricating a top-emitting optoelectronic device, after forming the functional layer on the anode 10 and before forming the cathode 50, it further includes: disposing a second interfacial corrosion inhibitor on the functional layer to form a second corrosion-inhibiting layer 70; the second interfacial corrosion inhibitor includes one or more of thiazole compounds and cyclic mercapto compounds.

[0137] In a third aspect, an embodiment of the present application further provides a display device, which includes the above optoelectronic device.

[0138] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0139] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0140] Example 1

[0141] This embodiment provides a top-emitting optoelectronic device, and the preparation method is as follows:

[0142] Clean the substrate with a patterned electrode; treat the surface of the ITO substrate with ultraviolet ozone for 5 min to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate to form an anode;

[0143] Spin-coat a mixed solution of PEDOT:PSS and the corrosion inhibitor thiazole acetate on the ITO substrate, where the mass ratio of PEDOT:PSS to the corrosion inhibitor thiazole acetate is 98:2; the spin-coating speed is 5000 rpm, the time is 30 s, and anneal at 150 °C for 15 min to form a hole injection layer with a thickness of 30 nm;

[0144] Spin-coat a mixed solution of TFB and corrosion inhibitor thiazole acetic acid on the hole injection layer, where the mass ratio of TFB to corrosion inhibitor thiazole acetic acid is 98:2; the spin-coating speed is 3000 rpm, the time is 30 s, and anneal at 120 °C for 10 min to form a hole transport layer with a thickness of 40 nm;

[0145] Spin-coat a 40 mg / mL CdSeS quantum dot solution on the hole transport layer, the spin-coating speed is 2000 rpm, the time is 30 s, and anneal at 100 °C for 5 min to form an active layer with a thickness of 30 nm;

[0146] Spin-coat an ethanol dispersion of ZnO on the quantum dot active layer, the spin-coating speed is 3000 rpm, the time is 30 s, and anneal at 100 °C for 15 min to form an electron transport layer with a thickness of 30 nm;

[0147] By thermal evaporation, deposit Ag in an environment with a vacuum degree not higher than 3×10 -4 Pa at a speed of 1 Å / s for 200 s to form a cathode with a thickness of 20 nm;

[0148] Use epoxy resin for encapsulation to obtain a top-emitting optoelectronic device.

[0149] Example 2

[0150] This example is basically the same as Example 1, except that the hole injection layer and the hole transport layer in this example do not contain the corrosion inhibitor thiazole acetic acid;

[0151] The preparation method of the active layer includes: spin-coat a mixed solution of CdSeS and corrosion inhibitor thiazole acetic acid on the hole transport layer, where the mass ratio of CdSeS to corrosion inhibitor thiazole acetic acid is 98:2; the spin-coating speed is 2000 rpm, the time is 30 s, and anneal at 100 °C for 5 min to form an active layer with a thickness of 30 nm.

[0152] Example 3

[0153] This example is basically the same as Example 1, except that the hole injection layer and the hole transport layer in this example do not contain the corrosion inhibitor thiazole acetic acid;

[0154] The preparation method of the electron transport layer includes: spin-coat a mixed solution of ZnO and corrosion inhibitor thiazole acetic acid on the active layer, where the mass ratio of ZnO to corrosion inhibitor thiazole acetic acid is 90:10; the spin-coating speed is 3000 rpm, the time is 30 s, and anneal at 100 °C for 15 min to form an electron transport layer with a thickness of 30 nm.

[0155] Examples 4 to 7

[0156] Examples 4 to 7 are basically the same as Example 1, except that,

[0157] In Example 4, with reference to Examples 1 to 2, an inhibitor is doped in the hole injection layer, the hole transport layer, and the active layer;

[0158] In Example 5, with reference to Examples 1 and 3, an inhibitor is doped in the hole injection layer, the hole transport layer, and the electron transport layer;

[0159] In Example 6, with reference to Examples 2 to 3, an inhibitor is doped in the active layer and the electron transport layer;

[0160] In Example 7, with reference to Examples 1 to 3, an inhibitor is doped in the hole injection layer, the hole transport layer, the active layer, and the electron transport layer.

[0161] Examples 8 - 9

[0162] Examples 8 - 9 are substantially the same as Example 7, except that

[0163] in Example 8, the inhibitor in the hole injection layer, the hole transport layer, the active layer, and the electron transport layer is 4,6 - dimethyl - 2 - mercaptopyrimidine;

[0164] in Example 9, the inhibitor in the hole injection layer, the hole transport layer, the active layer, and the electron transport layer is 2 - mercapto - 6 - nitrobenzothiazole.

[0165] Examples 10 - 13

[0166] Examples 10 - 13 are substantially the same as Example 7, except that

[0167] in Example 10, the mass ratio of PEDOT:PSS to thiazole acetate, the mass ratio of TFB to thiazole acetate, and the mass ratio of CdSeS to thiazole acetate are all 97:3;

[0168] in Example 11, the mass ratio of PEDOT:PSS to thiazole acetate, the mass ratio of TFB to thiazole acetate, and the mass ratio of CdSeS to thiazole acetate are all 99:1;

[0169] in Example 12, the mass ratio of ZnO to thiazole acetate is 88:12;

[0170] in Example 13, the mass ratio of ZnO to thiazole acetate is 92:8.

[0171] Example 14

[0172] This example is substantially the same as Example 7, except that after forming the electron transport layer, it further includes: providing a 3 mg / mL dispersion of 2 - acetylthiazole, spin - coating it on the electron transport layer at a spin - coating speed of 4000 rpm for 30 s, and annealing at 100 °C for 5 min to form an inhibitor layer.

[0173] Examples 15 - 16

[0174] Examples 15 - 16 are basically the same as Example 14, except that in Examples 15 - 16, 2 - acetylthiazole is replaced by 2 - mercaptobenzimidazole carboxylic acid and 2 - mercaptobenzothiazole, respectively.

[0175] Example 17

[0176] This example provides an inverted optoelectronic device, and the preparation method is as follows:

[0177] Clean the substrate with a patterned electrode; treat the surface of the ITO substrate with ultraviolet ozone for 5 min to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate, forming a cathode;

[0178] Spin - coat a mixed solution of ZnO and the corrosion inhibitor 2 - aminothiazole on the cathode, where the mass ratio of ZnO to the corrosion inhibitor 2 - aminothiazole is 98:2; the spin - coating speed is 3000 rpm, the time is 30 s, and anneal at 100 °C for 15 min to form an electron transport layer with a thickness of 30 nm;

[0179] Spin - coat a 40 mg / mL CdSeS quantum dot solution on the electron transport layer, the spin - coating speed is 2000 rpm, the time is 30 s, and anneal at 100 °C for 5 min to form an active layer with a thickness of 30 nm;

[0180] Spin - coat a TFB solution on the active layer, the spin - coating speed is 3000 rpm, the time is 30 s, and anneal at 120 °C for 10 min to form a hole transport layer with a thickness of 40 nm;

[0181] Spin - coat a PEDOT:PSS solution on the hole transport layer, the spin - coating speed is 5000 rpm, the time is 30 s, and anneal at 150 °C for 15 min to form a hole injection layer with a thickness of 30 nm;

[0182] By thermal evaporation, deposit Ag in an environment with a vacuum degree not higher than 3×10 -4 Pa at a speed of 1 Å / s for 200 s to form an anode with a thickness of 20 nm;

[0183] Encapsulate with epoxy resin to obtain an inverted optoelectronic device.

[0184] Example 18

[0185] This example is basically the same as Example 17, except that in this example, the electron transport layer does not contain the corrosion inhibitor thioacetic acid thiazole;

[0186] The preparation method of the active layer includes: spin-coating a mixed solution of CdSeS and the corrosion inhibitor 2-aminothiazole on the electron transport layer, wherein the mass ratio of CdSeS to the corrosion inhibitor 2-aminothiazole is 98:2; the spin-coating speed is 2000 rpm, the time is 30 s, and annealing is performed at 100 °C for 5 min to form an active layer with a thickness of 30 nm.

[0187] Example 19

[0188] This example is basically the same as Example 1, except that in this example, the electron transport layer does not contain the corrosion inhibitor thiazole acetic acid sulfide;

[0189] The preparation method of the hole injection layer and the hole transport layer includes: spin-coating a mixed solution of TFB and the corrosion inhibitor 2-aminothiazole on the active layer, wherein the mass ratio of TFB to the corrosion inhibitor 2-aminothiazole is 90:10; the spin-coating speed is 3000 rpm, the time is 30 s, and annealing is performed at 120 °C for 10 min to form a hole transport layer with a thickness of 40 nm; spin-coating a mixed solution of PEDOT:PSS and the corrosion inhibitor 2-aminothiazole on the hole transport layer, wherein the mass ratio of PEDOT:PSS to the corrosion inhibitor 2-aminothiazole is 90:10; the spin-coating speed is 5000 rpm, the time is 30 s, and annealing is performed at 150 °C for 15 min to form a hole injection layer with a thickness of 30 nm.

[0190] Examples 20 to 23

[0191] Examples 20 to 23 are basically the same as Example 1, except that

[0192] In Example 20, refer to Examples 17 to 18 to dope the corrosion inhibitor in the active layer and the electron transport layer;

[0193] In Example 21, refer to Examples 17 and 19 to dope the corrosion inhibitor in the hole injection layer, the hole transport layer and the electron transport layer;

[0194] In Example 22, refer to Examples 18 to 19 to dope the corrosion inhibitor in the hole injection layer, the hole transport layer and the active layer;

[0195] In Example 23, refer to Examples 17 to 19 to dope the corrosion inhibitor in the hole injection layer, the hole transport layer, the active layer and the electron transport layer.

[0196] Examples 24 to 25

[0197] Examples 24 to 25 are basically the same as Example 23, except that

[0198] In Example 24, the corrosion inhibitor in the hole injection layer, the hole transport layer, the active layer and the electron transport layer is 5-bromothiazole;

[0199] In Example 25, the corrosion inhibitors in the hole injection layer, hole transport layer, active layer, and electron transport layer are all 2-mercapto thiazole.

[0200] Examples 26 to 29

[0201] Examples 26 to 29 are basically the same as Example 23, except that

[0202] In Example 26, the mass ratios of ZnO to 2-aminothiazole and CdSeS to 2-aminothiazole are both 97:9;

[0203] In Example 27, the mass ratios of ZnO to 2-aminothiazole and CdSeS to 2-aminothiazole are both 99:1;

[0204] In Example 28, the mass ratios of PEDOT:PSS to 2-aminothiazole and TFB to 2-aminothiazole are 88:12;

[0205] In Example 29, the mass ratios of PEDOT:PSS to 2-aminothiazole and TFB to 2-aminothiazole are 92:8.

[0206] Example 30

[0207] This example is basically the same as Example 23, except that after forming the hole injection layer, it further includes: providing a 3 mg / mL dispersion of 5-bromothiazole, spin-coating it on the hole injection layer at a spin-coating speed of 4000 rpm for 30 s, and annealing at 100 °C for 5 min to form a corrosion inhibition layer.

[0208] Examples 31 to 32

[0209] Examples 31 to 32 are basically the same as Example 30, except that in Examples 31 to 32, 5-bromothiazole is replaced with 2-mercapto cytosine and 2-mercapto-6-nitrobenzothiazole respectively.

[0210] Comparative Example 1

[0211] This comparative example is basically the same as Example 1, except that in this comparative example, the hole injection layer and the hole transport layer do not contain the corrosion inhibitor thioacetate thiazole.

[0212] Comparative Example 2

[0213] This comparative example is basically the same as Example 17, except that in this comparative example, the electron transport layer does not contain 2-aminothiazole.

[0214] The optoelectronic devices of Examples 1 to 32 and Comparative Examples 1 to 2 were respectively tested for 1 h in the preparation of optoelectronic devices, and then placed in an environment of 25 °C temperature and 60% humidity for 5000 h. The luminance L, lifetimes T95 and T95@1k nit, and current efficiency C.E were obtained. The results of the top-emitting optoelectronic devices are shown in Table 1; the results of the bottom-emitting optoelectronic devices are shown in Table 2.

[0215] Among them, the test methods for luminance L and current efficiency C.E are as follows: They are tested and calculated by a Keithley 2400 high-precision digital source meter, an Ocean Optic USB2000+ spectrometer, and an LS-160 luminance meter.

[0216] The test methods for lifetimes T95 and T95@1k nit are as follows: When the device is driven by a constant current or voltage, the time required for the luminance to decrease to a certain proportion of the highest luminance. The time when the luminance drops to 95% of the highest luminance is defined as T95, and this lifetime is the measured lifetime. To shorten the test cycle, the device lifetime test is usually carried out by accelerating the device aging at a high luminance, and the lifetime at a high luminance is obtained by fitting with an extended exponential decay luminance decay fitting formula. For example, the lifetime at 1k nit is denoted as T95@1k nit. The specific calculation formula is as follows:

[0217]

[0218] Among them, T95L is the lifetime at a low luminance, T95H is the measured lifetime at a high luminance, LH is the device accelerated to the highest luminance, LL is 1k nit, and A is the acceleration factor. In this experiment, the A value was obtained as 1.7 by measuring the lifetimes of several groups of green QLED devices at the rated luminance.

[0219] Table 1

[0220]

[0221] It can be seen from Table 1 that in the top-emitting optoelectronic devices:

[0222] From Examples 1 to 6 and Comparative Example 1, it can be obtained that whether an inhibitor is added to any carrier functional layer and / or active layer, compared with Comparative Example 1, it can effectively improve the luminance and current efficiency of the optoelectronic device and extend the service life of the optoelectronic device. Especially after being placed for 5000 h, the optoelectronic devices of Examples 1 to 6 still have good performance, while the performance of the optoelectronic device of Comparative Example 1 has significantly declined; in Example 3, the inhibitor is doped in the electron transport layer, and the luminance, current efficiency, and service life of the optoelectronic device have been significantly improved;

[0223] It can be obtained from Example 1, Examples 7-9 and Comparative Example 1 that doping corrosion inhibitors in the hole functional layer, electron transport layer and active layer simultaneously has a better improvement effect on optoelectronic devices than doping corrosion inhibitors in only one of the functional layers. There is no significant difference in the performance of optoelectronic devices between doping thiazole-based corrosion inhibitors and outer-ring mercapto-based corrosion inhibitors. Both can improve the brightness and current efficiency of optoelectronic devices, extend the service life of optoelectronic devices, and improve the performance stability of optoelectronic devices during long-term use;

[0224] It can be obtained from Example 7, Examples 10-13 and Comparative Example 1 that within the scope provided in this application, the amount of corrosion inhibitor has no significant difference in the performance of optoelectronic devices. The optoelectronic devices of Examples 10-13 still have high brightness, current efficiency and service life after being placed for 5000 h;

[0225] It can be obtained from Example 7, Examples 14-16 and Comparative Example 1 that setting a corrosion inhibition layer between the electron transport layer and the cathode can further improve the brightness, current efficiency and service life of optoelectronic devices.

[0226] Table 2

[0227]

[0228]

[0229] As can be seen from Table 2, in the inverted optoelectronic device:

[0230] It can be obtained from Examples 17-22 and Comparative Example 2 that, similar to the normal optoelectronic device, adding corrosion inhibitors in any carrier functional layer and / or active layer can effectively improve the brightness and current efficiency of optoelectronic devices and extend the service life of optoelectronic devices compared with Comparative Example 1. Especially after being placed for 5000 h, the optoelectronic devices of Examples 17-22 still have good performance, while the brightness, service life and current efficiency of the inverted optoelectronic device of Comparative Example 2 all decrease sharply after 5000 h;

[0231] It can be obtained from Example 17, Examples 23-25 and Comparative Example 2 that doping corrosion inhibitors in the hole functional layer, electron transport layer and active layer simultaneously has a better improvement effect on optoelectronic devices than doping corrosion inhibitors in only one of the functional layers. There is no significant difference in the performance of optoelectronic devices between doping thiazole-based corrosion inhibitors and outer-ring mercapto-based corrosion inhibitors. Both can improve the brightness and current efficiency of optoelectronic devices, extend the service life of optoelectronic devices, and improve the performance stability of optoelectronic devices during long-term use;

[0232] It can be seen from Example 23, Examples 26 to 28 and Comparative Example 2 that within the scope provided by the present application, the amount of the corrosion inhibitor has no significant difference in the performance of the optoelectronic device. After being placed for 5000 h, the optoelectronic devices of Examples 26 to 28 still have high brightness, current efficiency and service life;

[0233] It can be seen from Example 23, Examples 30 to 32 and Comparative Example 2 that by providing a corrosion inhibition layer between the hole functional layer and the anode of the inverted optoelectronic device, the brightness, current efficiency and service life of the optoelectronic device can be further improved.

[0234] The optoelectronic device, its preparation method and display device provided by the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. An optoelectronic device, characterized in that, It includes an anodic electrode, a functional layer, and a cathodic electrode which are stacked. The material of the functional layer includes a doped corrosion inhibitor, and / or a first corrosion-inhibiting layer is provided between the anodic electrode and the functional layer, and the material of the first corrosion-inhibiting layer includes a first interfacial corrosion inhibitor; the doped corrosion inhibitor and the first interfacial corrosion inhibitor each include one or more of thiazole compounds and cyclic mercapto compounds.

2. The optoelectronic device according to claim 1, characterized in that, The structural formula of the thiazole compound is shown in formula (I): Wherein, R1, R2, and R3 are each independently selected from hydrogen, deuterium, halogen, cyano, hydroxyl, carboxyl, aldehyde, nitro, substituted or unsubstituted C1-C 20 alkyl, substituted or unsubstituted C1-C 20 alkoxy, substituted or unsubstituted C1-C 20 acyloxy, substituted or unsubstituted C1-C 20 alkoxycarbonyl, substituted or unsubstituted C6-C 20 a first aryl, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkynyl, one or more of them; and / or The chemical general formula of the cyclic mercapto compound is Ar-SH, wherein Ar is selected from a substituted or unsubstituted secondary aryl group with 6 to 60 carbon atoms, a substituted or unsubstituted heterocyclic group with 5 to 60 ring atoms, or a combination thereof.

3. The optoelectronic device according to claim 2, characterized in that, R1, R2, and R3 are each independently selected from hydrogen, deuterium, halogen, cyano, hydroxy, carboxy, aldehyde, nitro, substituted or unsubstituted C5-C 10 alkyl, substituted or unsubstituted C5-C 10 alkoxy, substituted or unsubstituted C5-C 10 acyloxy, substituted or unsubstituted C5-C 10 alkoxycarbonyl, substituted or unsubstituted C 10 -C 15 first aryl, substituted or unsubstituted C5-C 10 alkenyl, substituted or unsubstituted C5-C 10 alkynyl, one or more of them; and / or Ar is selected from a substituted or unsubstituted secondary aryl group with 10 to 30 carbon atoms, a substituted or unsubstituted heterocyclic group with 10 to 30 ring atoms, or a combination thereof.

4. The optoelectronic device according to claim 3, characterized in that, The halogen includes one or more of fluorine, chlorine, bromine, and iodine; and / or The alkyl group includes one or more of methyl, ethyl, isopropyl, and tert-butyl; and / or The alkoxy group includes one or more of methoxy, ethoxy, and propoxy; and / or The acyloxy group includes one or more of formyloxy, acetoxy, propionyloxy, butyryloxy, octanoyloxy, palmitoyloxy, and stearoyloxy; and / or The alkoxycarbonyl group includes one or more of methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, butoxycarbonyl, octoxycarbonyl, palmitoxycarbonyl, and stearoxycarbonyl; and / or The first aryl group includes one or more of phenyl, p-tolyl, p-nitrophenyl, o-methoxyphenyl, m-methoxyphenyl, p-methoxyphenyl, and p-nitromethoxyphenyl; and / or The alkenyl group includes one or more of vinyl, propenyl, and butenyl; and / or The alkynyl group includes one or more of ethynyl, propynyl, pentynyl, and heptynyl; and / or The substituents of the alkyl group, alkoxy group, acyloxy group, alkoxycarbonyl group, first aryl group, alkenyl group, and alkynyl group each independently include one or more of -NH, -F, -Cl, -Br, -I, -OH, -COOH, -NO, -SOH, -CHO, -SH, and -CN; and / or The substituents in the secondary aryl group and heterocyclic group each independently include one or more of a hydrocarbon group, a halogen group, -OH, -OCH3, -NO2, -ONHNH2, -NHNH2, -NH2, -SH, -CN, -CHO, and -SO3H; the hydrocarbon group includes one or more of an alkyl group, an alkenyl group, and an alkynyl group, the alkyl group includes one or more of methyl, ethyl, propyl, and butyl, the alkenyl group includes one or more of vinyl, propenyl, and butenyl, the alkynyl group includes one or more of ethynyl, propynyl, and butynyl; the halogen group includes one or more of -F, -Cl, -Br, and -I; and / or The heteroatoms in the heterocyclic group include one or more of O, P, N, and S; and / or The heterocyclic group includes one or more of thiazolyl, thiophenyl, furyl, pyrrolyl, pyridyl, pyrimidinyl, imidazolyl, oxazolyl, pyrazinyl, indolyl, quinolinyl, pteridinyl, and acridinyl.

5. The optoelectronic device according to claim 1, characterized in that, The thiazole compounds include one or more of 2-mercapto-thiazole, 2-mercapto-benzothiazole, 2-mercapto-6-nitrobenzothiazole, 2-amino-thiazole, 2-propyl-thiazole, 2-acetyl-thiazole, thiolethyl acetate, 5-bromo-thiazole, 2-methylthio-thiazole, 2-amino-4-phenyl-thiazole, 5-methyl-thiazole, 2-amino-benzothiazole, 2-bromo-benzothiazole, 2,6-dimethyl-benzothiazole, 6-nitro-benzothiazole, 2-hydrazino-benzothiazole; and / or The cyclic mercapto compounds include one or more of 2-mercapto-thiazole, 2-mercapto-benzothiazole, 2-mercapto-6-nitrobenzothiazole, 2-mercapto-cytosine, 2-mercapto-pyrimidine, 2-mercapto-nicotinic acid, 2-mercapto-benzimidazole carboxylic acid, 2-mercapto-pyrazine, 2-mercapto-thiazoline, 4,6-dimethyl-2-mercapto-pyrimidine, 3-mercapto-indole, 2-mercapto-pyrimidine-3-carbonitrile, 2-mercapto-imidazole, 2-mercapto-benzimidazole, 4-mercapto-pyridine, 2-mercapto-pyridine, 2,4-dimercapto-pyrimidine, 3-mercapto-1,2,4-triazole, 2-mercapto-1,3,4-thiadiazole, 2-mercapto-1-methylimidazole.

6. The optoelectronic device according to claim 1, characterized in that, The functional layer includes one or more of a hole functional layer, an active layer, and an electron functional layer sequentially arranged in the direction from the anode to the cathode; The doped corrosion inhibitor includes one or more of a first corrosion inhibitor, a second corrosion inhibitor, and a third corrosion inhibitor; when the functional layer includes the hole functional layer, the material of the hole functional layer includes a hole functional material and the first corrosion inhibitor; when the functional layer includes the active layer, the material of the active layer includes an active material and the second corrosion inhibitor; when the functional layer includes the electron functional layer, the material of the electron functional layer includes an electron functional material and the third corrosion inhibitor.

7. The optoelectronic device according to claim 6, characterized in that, The optoelectronic device is a normal-type optoelectronic device or an inverted-type optoelectronic device; When the optoelectronic device is a normal-type optoelectronic device, in the electron functional layer, the mass ratio of the electron functional material to the third corrosion inhibitor is (88-92):(8-12); and / or, in the active layer, the mass ratio of the active material to the second corrosion inhibitor is (97-99):(1-3); and / or, in the hole functional layer, the mass ratio of the hole functional material to the first corrosion inhibitor is (97-99):(1-3); When the optoelectronic device is an inverted-type optoelectronic device, in the hole functional layer, the mass ratio of the hole functional material to the first corrosion inhibitor is (88-92):(8-12); and / or, in the active layer, the mass ratio of the active material to the second corrosion inhibitor is (97-99):(1-3); and / or, in the electron functional layer, the mass ratio of the electron functional material to the third corrosion inhibitor is (97-99):(1-3).

8. The optoelectronic device according to claim 1, characterized in that, When the material of the functional layer includes a doped corrosion inhibitor, a second corrosion inhibition layer is further provided between the functional layer and the cathode, the material of the second corrosion inhibition layer includes a second interface corrosion inhibitor, and the second interface corrosion inhibitor includes one or more of thiazole compounds and cyclic mercapto compounds.

9. The optoelectronic device according to claim 8, characterized in that, The thickness of the first corrosion inhibition layer is 3 nm to 5 nm; and / or The thickness of the second corrosion inhibition layer is 3 nm to 5 nm; and / or The thickness of the anode is 32 nm to 35 nm; and / or The light transmittance of the anode is greater than or equal to 90%; and / or The anode and the cathode each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a metal oxide electrode or a composite electrode with a metal disposed between doped or undoped transparent metal oxides, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or The active material includes one or more of an organic active material and quantum dots; the organic active material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF material, polymers containing B-N covalent bonds, HLCT material, and Exciplex active material; the quantum dots are selected from one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite-type quantum dots; the materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds; the shell of the core-shell structure quantum dots is one or more layers; the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe;The III-V compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI compound is selected from one or more of CuInS2, CuInSe2 and AgInS2; the core-shell structure quantum dot is selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS; the structural general formula of the perovskite quantum dot is AMX3, where A is selected from Cs; + 、CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of them, and X is selected from one or more of Cl - 、Br - 、I - one or more of them; and / or The electronic functional material includes one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA group semiconductor material, a IIIA-VA group semiconductor material, and a IB-IIIA-VIA group semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor material includes one or more of InP and GaP. The IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS; and / or The hole functional material includes one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green active material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide, metal selenide and metal nitride. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5. The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V. The metal sulfide includes one or more of CuS, MoS3, WS3. The metal selenide includes one or more of MoSe3, WSe3. The metal nitride includes p-type gallium nitride.

10. A method for preparing an optoelectronic device, the optoelectronic device including a normal-type optoelectronic device or an inverted-type optoelectronic device, characterized in that, The preparation method of the inverted optoelectronic device includes: Provide a preform of an optoelectronic device, the preform of the optoelectronic device including a cathode; Form a functional layer on the cathode, the material of the functional layer including a doped corrosion inhibitor; and / or, form a first corrosion-inhibiting layer on the functional layer, the material of the first corrosion-inhibiting layer including a first interfacial corrosion inhibitor; the doped corrosion inhibitor and the first interfacial corrosion inhibitor each include one or more of thiazole compounds and cyclic mercapto compounds; Form an anode on the functional layer or the first corrosion-inhibiting layer to obtain an optoelectronic device; Alternatively, the method for preparing the normal-type optoelectronic device includes: Provide a preform of an optoelectronic device, the preform of the optoelectronic device including an anode; Form a functional layer on the anode, the material of the functional layer including a doped corrosion inhibitor; the doped corrosion inhibitor includes one or more of thiazole compounds and cyclic mercapto compounds; Form a cathode on the functional layer to obtain an optoelectronic device.

11. The preparation method according to claim 10, characterized in that, The structural formula of the thiazole compound is shown in Formula (I): R1, R2, and R3 are each independently selected from hydrogen, deuterium, halogen, cyano, hydroxy, carboxy, aldehyde, nitro, substituted or unsubstituted C1-C 20 alkyl, substituted or unsubstituted C1-C 20 alkoxy, substituted or unsubstituted C1-C 20 acyloxy, substituted or unsubstituted C1-C 20 alkoxycarbonyl, substituted or unsubstituted C6-C 20 primary aryl, substituted or unsubstituted C2-C 20 alkenyl, substituted or unsubstituted C2-C 20 alkynyl, or one or more of them; the thiazole compounds include one or more of 2-mercapto thiazole, 2-mercapto benzothiazole, 2-mercapto-6-nitro benzothiazole, 2-amino thiazole, 2-propyl thiazole, 2-acetyl thiazole, thio thiazole acetate, 5-bromo thiazole, 2-methylthio thiazole, 2-amino-4-phenyl thiazole, 5-methyl thiazole, 2-amino benzothiazole, 2-bromo benzothiazole, 2,6-dimethyl benzothiazole, 6-nitro benzothiazole, 2-hydrazino benzothiazole; and / or The chemical general formula of the cyclic mercapto compound is Ar-SH, wherein Ar is selected from a substituted or unsubstituted second aryl group having 6 to 60 carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 60 ring atoms, or a combination thereof; the cyclic mercapto compounds include one or more of 2-mercapto thiazole, 2-mercapto benzothiazole, 2-mercapto-6-nitrobenzothiazole, 2-mercapto cytosine, 2-mercapto pyrimidine, 2-mercapto nicotinic acid, 2-mercapto benzimidazole carboxylic acid, 2-mercapto pyrazine, 2-mercapto thiazoline, 4,6-dimethyl-2-mercapto pyrimidine, 3-mercapto indole, 2-mercapto pyrimidine-3-carbonitrile, 2-mercapto imidazole, 2-mercapto benzimidazole, 4-mercapto pyridine, 2-mercapto pyridine, 2,4-dimercapto pyrimidine, 3-mercapto-1,2,4-triazole, 2-mercapto-1,3,4-thiadiazole, and 2-mercapto-1-methyl imidazole.

12. The preparation method according to claim 10, characterized in that, The forming of the functional layer on the cathode includes forming one or more of an electron functional layer, an active layer, and a hole functional layer on the cathode in sequence; or, the forming of the functional layer on the anode includes forming one or more of a hole functional layer, an active layer, and an electron functional layer on the anode in sequence; The doped corrosion inhibitor includes one or more of a third corrosion inhibitor, a second corrosion inhibitor, and a first corrosion inhibitor; The method for forming the electron functional layer includes: providing a first mixed solution including an electron functional material and a third corrosion inhibitor; disposing the first mixed solution on the cathode or the active layer to form an electron functional layer; and / or The method for forming the active layer includes: providing a second mixed solution including an active material and a second corrosion inhibitor; disposing the second mixed solution on the electron functional layer or the hole functional layer to form an active layer; and / or The method for forming the hole functional layer includes: providing a third mixed solution including a hole functional material and a first corrosion inhibitor; disposing the third mixed solution on the active layer or the anode to form a hole functional layer; and / or The method for forming the first corrosion inhibition layer includes: providing a first corrosion inhibition solution which includes a first interfacial corrosion inhibitor; disposing the first corrosion inhibition solution on the hole functional layer to form the first corrosion inhibition layer.

13. The preparation method according to claim 12, characterized in that, When preparing the inverted optoelectronic device, in the first mixed solution, the mass ratio of the electron functional material to the third corrosion inhibitor is (97-99):(1-3); and / or When preparing the normal optoelectronic device, in the first mixed solution, the mass ratio of the electron functional material to the third corrosion inhibitor is (88-92):(8-12); and / or In the first mixed solution, the mass concentration of the third corrosion inhibitor is 0.1 mg / mL to 0.3 mg / mL; and / or In the second mixed solution, the mass ratio of the active material to the second corrosion inhibitor is (97-99):(1-3); and / or In the second mixed solution, the mass concentration of the second corrosion inhibitor is 0.1 mg / mL to 0.3 mg / mL; and / or When preparing the inverted optoelectronic device, in the third mixed solution, the mass ratio of the hole functional material to the first corrosion inhibitor is (88-92):(8-12); and / or When preparing the normal optoelectronic device, in the third mixed solution, the mass ratio of the hole functional material to the first corrosion inhibitor is (97-99):(1-3); and / or In the third mixed solution, the mass concentration of the first corrosion inhibitor is 0.8 mg / mL to 1.2 mg / mL; and / or In the first corrosion inhibition solution, the mass concentration of the first interfacial corrosion inhibitor is 1 mg / mL to 5 mg / mL; and / or The first mixed solution further includes a first solvent; the second mixed solution further includes a second solvent; the third mixed solution further includes a third solvent; the first corrosion inhibition solution further includes a fourth solvent; the first solvent, the second solvent, the third solvent and the fourth solvent each independently include a polar solvent; the polar solvent includes an alcohol solvent; the alcohol solvent includes one or more of diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol.

14. The preparation method according to claim 12, wherein, After disposing the first mixed solution on the cathode or the active layer, a first annealing is further included; the temperature of the first annealing is 100°C to 120°C, and the time is 10 min to 20 min; and / or After disposing the second mixed solution on the electron functional layer or the hole functional layer, a second annealing is further included; the temperature of the second annealing is 80°C to 120°C, and the time is 3 min to 10 min; and / or After disposing the third mixed solution on the active layer or the anode, a third annealing is further included; the temperature of the third annealing is 100°C to 150°C, and the time is 10 min to 20 min; and / or After the first corrosion inhibitor solution is disposed on the hole functional layer, a fourth annealing is further included; the temperature of the fourth annealing is 100 °C to 120 °C, and the time is 3 min to 10 min.

15. The preparation method according to claim 10, wherein, When preparing the top-emitting optoelectronic device, after the functional layer is formed on the anode and before the cathode is formed, the following is further included: a second interfacial corrosion inhibitor is disposed on the functional layer to form a second corrosion inhibitor layer; the second interfacial corrosion inhibitor includes one or more of thiazole compounds and cyclic mercapto compounds.

16. A display device, wherein, It includes the optoelectronic device according to any one of claims 1 to 9, or the optoelectronic device prepared by the preparation method according to any one of claims 10 to 15.

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