Superconducting transition temperature regulation and control method
By regulating the thickness and proportion of the oxide layer of the superconducting film with a constant voltage or current in the anodic oxidation tank, the cost-intensive problems in the prior art are solved, and economic regulation of superconducting transition temperature and performance stability are achieved.
Patent Information
- Application Number
- CN202510487623.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-17
- Publication Date
- 2025-07-01
AI Technical Summary
The prior art methods for regulating the superconducting transition temperature require expensive multi-target sputtering chambers and precious metal or ion beam implantation equipment, resulting in high costs.
By oxidizing the superconducting film at a target constant voltage or constant current, the thickness and proportion of the oxide layer are controlled to regulate the temperature of the superconducting film.
It provides an economical and effective method of superconducting transition temperature regulation, which reduces costs and prevents device aging through a tight oxide layer, thereby improving performance stability.
Smart Images
Figure CN120236819A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of superconducting device manufacturing, and particularly to a method for regulating the superconducting transition temperature. Background Art
[0002] A transition edge sensor (TES) is a single-photon detector composed of four parts: an absorber, a TES superconducting thin film, a weak link, and a heat sink. It has higher energy resolution and higher detection efficiency in the X-ray band than currently commonly used commercial semiconductor detectors, such as high-purity germanium detectors and silicon drift detectors. Currently, in the laboratory, the energy resolutions of 1.6 eV @ 5.9 keV and 22 eV @ 97 keV have been achieved for TES. In contrast, the theoretical limit energy resolution of a silicon drift detector is 117 eV @ 5.9 keV, which shows that TES has great advantages in the detection of high-energy ray energies. In addition, TES also has extremely high absorption efficiency. By fabricating a TES array and multiplexing the readout of detection signals, a higher detection area and counting rate can be obtained.
[0003] There is a weak link between the heat sink of TES and the TES superconducting thin film. While the weak link supports the TES thin film, it also conducts the heat generated by the TES thin film or flowing through the TES thin film to the heat sink at a relatively slow speed (about in the millisecond order of magnitude). There is good thermal coupling between the TES thin film and the absorber.
[0004] In the prior art, in order to realize the regulation of the superconducting transition temperature of the superconducting thin film, a sputtering chamber with multiple targets, precious metals, or expensive ion implantation equipment is required, making the research cost of the superconducting transition edge sensor extremely expensive. Summary of the Invention
[0005] Based on this, in view of the above technical problems, it is necessary to provide a method for regulating the superconducting transition temperature, which can at least control the thickness of the oxide layer formed and the ratio between the oxide layer and the unoxidized layer by oxidizing the superconducting thin film in an anodizing bath at a target constant voltage or a target constant current, and then regulate the temperature of the superconducting thin film.
[0006] To achieve the above object and other objects, in a first aspect, the present disclosure provides a method for regulating the superconducting transition temperature, including:
[0007] Providing a substrate;
[0008] Performing magnetron sputtering on the substrate to form a superconducting thin film, where the superconducting thin film includes the substrate and a superconducting thin film layer located on the substrate;
[0009] Place the target superconducting thin film into an anodic oxidation bath for oxidation at a target constant voltage or a target constant current. An electrolytic solution is stored in the anodic oxidation bath. The superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0010] In one embodiment, magnetron sputtering of the substrate includes:
[0011] Fix the substrate and the target in a magnetron sputtering device;
[0012] Close the magnetron sputtering chamber and make the magnetron sputtering chamber reach the base vacuum;
[0013] Input argon into the magnetron sputtering chamber to make the gas pressure in the chamber stable at the target gas pressure;
[0014] Apply a target power to the target for pre-sputtering for a target time;
[0015] Sputter onto the substrate to form a superconducting thin film layer with a target thickness on the substrate.
[0016] In one embodiment, the method further includes:
[0017] Stop sputtering and stop inputting argon;
[0018] Control the magnetron sputtering chamber to reach the base vacuum and wait for the system to cool down.
[0019] In one embodiment, the base vacuum degree is E-9 Torr.
[0020] In one embodiment, the target gas pressure is 2 mTorr - 4 mTorr.
[0021] In one embodiment, the target power is 250 W - 350 W, and the target time is 160 s - 220 s.
[0022] In one embodiment, the target thickness is 40 nm - 60 nm.
[0023] In one embodiment, the electrolytic solution includes: ammonium pentaborate, ethylene glycol, deionized water. The weight of ammonium pentaborate is 350 g - 440 g, the ethylene glycol is 2 L - 3 L, and the deionized water is 1.5 L - 2.3 L.
[0024] In one embodiment, the target constant current is 0.4 -1.5 .
[0025] In one embodiment, the target constant voltage is 4 V - 30 V.
[0026] In a second aspect, the present application further provides a device for regulating the superconducting transition temperature, including a substrate providing module, a superconducting thin film forming module, and an oxidation module. The substrate providing module is configured to provide a substrate;
[0027] The superconducting thin film forming module is configured to perform magnetron sputtering on the substrate to form a superconducting thin film, and the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate;
[0028] The oxidation module is configured to place the target superconducting thin film in an anodic oxidation tank for oxidation at a target constant voltage or a target constant current. An electrolyte is stored in the anodic oxidation tank, the superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0029] In a third aspect, the present application further provides a computer device, including a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:
[0030] Provide a substrate;
[0031] Perform magnetron sputtering on the substrate to form a superconducting thin film, and the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate;
[0032] Place the target superconducting thin film in an anodic oxidation tank for oxidation at a target constant voltage or a target constant current. An electrolyte is stored in the anodic oxidation tank, the superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0033] In a fourth aspect, the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented:
[0034] Provide a substrate;
[0035] Perform magnetron sputtering on the substrate to form a superconducting thin film, and the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate;
[0036] Place the target superconducting thin film in an anodic oxidation tank for oxidation at a target constant voltage or a target constant current. An electrolyte is stored in the anodic oxidation tank, the superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0037] In a fifth aspect, the present application further provides a computer program product, including a computer program. When the computer program is executed by a processor, the following steps are implemented:
[0038] Provide a substrate;
[0039] The substrate is subjected to magnetron sputtering to form a superconducting thin film, and the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate;
[0040] The target superconducting thin film is placed in an anodizing tank and oxidized at a target constant voltage or a target constant current. An electrolyte is stored in the anodizing tank. The superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0041] In the superconducting transition temperature regulation method in the above embodiment, by placing the superconducting thin film in an anodizing tank and oxidizing it at a target constant voltage or a target constant current, the thickness of the generated oxide layer and the ratio between the oxide layer and the unoxidized layer are controlled, and then the temperature of the superconducting thin film is regulated. Description of the Drawings
[0042] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0043] Figure 1 It is a schematic flowchart of a superconducting transition temperature regulation method provided in an embodiment;
[0044] Figure 2 It is a trend chart of the superconducting transition temperature provided in an embodiment;
[0045] Figure 3 It is a structural block diagram of a superconducting transition temperature regulation device in an embodiment;
[0046] Figure 4 It is an internal structure diagram of a computer device in an embodiment.
[0047] Reference Numerals and Descriptions:
[0048] 10. Substrate providing module; 20. Superconducting thin film forming module; 30. Oxidation module. Detailed Embodiments
[0049] To facilitate the understanding of the present disclosure, the present disclosure will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present disclosure more thorough and comprehensive.
[0050] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terms used in the description of the present disclosure herein are for the purpose of describing particular embodiments only and are not intended to limit the present disclosure.
[0051] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and / or portions, these elements, components, regions, layers, doping types and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or portion from another element, component, region, layer, doping type or portion. Thus, without departing from the teachings of the present disclosure, the first element, component, region, layer, doping type or portion discussed below may be referred to as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types. For example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.
[0052] Spatial relationship terms such as "under", "below", "lower", "beneath", "above", "upper", etc. may be used herein to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientation shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the figures is flipped, an element or feature described as "under" or "beneath" or "below" another element or feature will be oriented "on" the other element or feature. Thus, the exemplary terms "under" and "beneath" can include both an upper and a lower orientation. In addition, the device may also include additional orientations (such as rotating 90 degrees or other orientations), and the spatial descriptors used herein are to be interpreted accordingly.
[0053] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that when the terms "comprising" and / or "including" are used in this specification, the presence of features, integers, steps, operations, elements and / or components can be determined, but one or more other features, integers, steps, operations, elements, components and / or groups are not excluded from the presence or addition. Also, as used herein, the term "and / or" includes any and all combinations of the associated listed items.
[0054] Embodiments of the invention are described herein with reference to cross-sectional views that are schematic illustrations of ideal embodiments (and intermediate structures) of the present disclosure, and variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances can be expected. Accordingly, embodiments of the present disclosure should not be limited to the particular shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing techniques. For example, an implanted region shown as rectangular typically has rounded or curved features and / or an implanted concentration gradient at its edges, rather than a binary change from the implanted region to the non-implanted region. Similarly, a buried region formed by implantation can result in some implantation in the region between the buried region and the surface through which the implantation occurs. Accordingly, the regions shown in the figures are substantially schematic, their shapes do not represent the actual shapes of the regions of the device, and do not limit the scope of the present disclosure.
[0055] It should be noted that a transition edge sensor (TES) is a single-photon detector composed of four parts: an absorber, a TES superconducting thin film, a weak link, and a heat sink. It has higher energy resolution and higher detection efficiency in the X-ray band than currently commonly used commercial semiconductor detectors, such as high-purity germanium detectors and silicon drift detectors. Currently, the TES has achieved energy resolutions of 1.6 eV @ 5.9 keV and 22 eV @ 97 keV in the laboratory. In contrast, the theoretical limit energy resolution of a silicon drift detector is 117 eV @ 5.9 keV, which shows that the TES has great advantages in the detection of high-energy ray energies. In addition, the TES also has extremely high absorption efficiency. By arraying the TES and multiplexing the readout of the detection signals, a larger detection area and count rate can be obtained.
[0056] The heat sink of the TES is connected to the TES superconducting thin film by a weak link. While the weak link supports the TES thin film, it also conducts the heat generated by the TES thin film or flowing through the TES thin film to the heat sink at a relatively slow rate (about in the millisecond order of magnitude). There is good thermal coupling between the TES thin film and the absorber.
[0057] The working principle is as follows: Before the test signal reaches the TES, the TES is current-biased at the lower edge of the superconducting transition edge. When photons are absorbed by the absorber, the energy of the photons is converted into heat to thermally equilibrate the entire absorber and conduct to the TES thin film, causing the temperature of the TES thin film to increase, the resistance to increase, and the bias current of the TES to change. The energy of the incident photons can be obtained by measuring the bias current of the TES. Subsequently, the heat is conducted through the weak link to the heat sink with a lower temperature, and the TES returns to the state to be measured.
[0058] There are generally three technical routes for TES thin films: 1. Single-element superconducting materials, 2. Superconducting-metal multilayers, 3. Injecting magnetic ions into superconducting materials for doping. Among them, for 2 and 3, the superconducting transition temperature (Tc) of the thin film can be adjusted by the thickness and ratio of the superconducting / metal thin film or by changing the injection concentration of magnetic ions.
[0059] Based on this, please refer to Figure 1 , an embodiment of the present disclosure provides a method for preparing a superconducting transition edge sensor, including the following steps:
[0060] Step S1000: Provide a substrate.
[0061] Here, a clean and dry substrate needs to be provided to ensure that the surface is free of contaminants and to guarantee the film adhesion and quality.
[0062] Step S2000: Perform magnetron sputtering on the substrate to form a superconducting thin film.
[0063] Among them, the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate.
[0064] Specifically, performing magnetron sputtering on the substrate includes: fixing the substrate and the target in a magnetron sputtering device; closing the magnetron sputtering chamber and bringing the magnetron sputtering chamber to the base vacuum; inputting argon into the magnetron sputtering chamber to make the gas pressure in the chamber stable at the target pressure; applying a target power to the target and performing pre-sputtering for a target time; sputtering the substrate to form a superconducting thin film layer with a target thickness on the substrate.
[0065] Among them, the method further includes: stopping sputtering and stopping inputting argon; controlling the magnetron sputtering chamber to reach the base vacuum and waiting for the system to cool down.
[0066] Exemplarily, when depositing a superconducting thin film, the substrate and the target can be fixed in a magnetron sputtering device first. Ensure that the chamber is clean, close the chamber and turn on the vacuum, continuously pump air, reach the base vacuum of the device, slowly introduce high-purity argon gas, control the argon gas flow rate to stabilize the chamber pressure within the required range. After the chamber pressure is stable, apply an appropriate power to the target and perform pre-sputtering for a certain period of time. The purpose is to remove oxides and contaminants on the target surface, stabilize the sputtering rate, and ensure the quality and repeatability of the deposited thin film. After determining that the sputtering parameters are correct, start depositing the thin film on the substrate until the required thickness is reached. Stop sputtering on the substrate, turn off the power supply and stop the argon gas supply, wait for the device to cool down and the chamber vacuum degree to recover to the base vacuum, open the chamber, and take out the deposited superconducting thin film sample.
[0067] Step S3000: Place the target superconducting thin film into an anodic oxidation tank and perform oxidation at a target constant voltage or a target constant current.
[0068] Wherein, an electrolyte is stored in the anodic oxidation tank, the superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0069] Exemplarily, anodic oxidation preparation can be carried out in advance. The specific steps include: putting a suitable electrolyte into the anodic oxidation tank, fixing the substrate on which the superconducting thin film is deposited to the anode, and the superconducting thin film faces the cathode. Since the substrate is generally an insulating material, the anode of the oxidation current needs to be connected from the front of the thin film, and the cathode can be made of a titanium plate, a stainless steel plate or a lead plate to ensure good contact between the anode and the cathode.
[0070] Here, since the oxidation depth is related to the voltage, the constant current mode can be used to oxidize to a specific voltage or the constant voltage mode can be used to preset the voltage in advance and maintain it at the target voltage for a certain period of time; after the anodic oxidation is completed, take out the sample, rinse it with deionized water and dry it.
[0071] Wherein, the base vacuum degree is E-9 Torr.
[0072] Specifically, the target pressure is 2 mTorr - 4 mTorr.
[0073] Exemplarily, the target pressure can be 2 mTorr, 3 mTorr, 4 mTorr, etc.
[0074] Wherein, the target power is 250 W - 350 W, and the target time is 160 s - 220 s.
[0075] Exemplarily, the target power can be 250 W, 300 W, 350 W, etc.
[0076] Exemplarily, the target time may be 160s, 180s, 200s, 220s, and so on.
[0077] Wherein, the target thickness is 40nm-60nm.
[0078] Exemplarily, the target thickness may be 40 nm, 50 nm, 60 nm, and so on.
[0079] Wherein, the electrolyte comprises: ammonium pentaborate, ethylene glycol, and deionized water. The weight of the ammonium pentaborate is 350g-440g, the weight of the ethylene glycol is 2L-3L, and the weight of the deionized water is 1.5L-2.3L.
[0080] For example, the weight of ammonium pentaborate can be 350 g, 380 g, 400 g, 420 g, 440 g, and the like.
[0081] Illustratively, the ethylene glycol may be 2L, 2.3L, 2.5L, 2.8L, 3L, and the like.
[0082] Illustratively, the deionized water may be 1.5 L, 1.8 L, 2.3 L, and so on.
[0083] Among them, the target constant current is 0.4 -1.5 .
[0084] For example, the target constant current may be 0.8 , 1 , 1.2 etc.
[0085] Among them, the target constant voltage is 4V-30V.
[0086] Exemplarily, the target constant voltage may be 4V, 15V, 23V, 27V, 30V, etc.
[0087] Exemplarily, the substrate can be selected as 200 nm silicon oxide and 500 μm silicon substrate, which are cleaned and dried and then placed in high vacuum DC magnetron sputtering. The target material can be Ti with a purity of 99.995%. The background vacuum of the equipment can reach E-9 Torr. After the system vacuum reaches the background vacuum, high-purity argon gas is introduced to maintain the system pressure at 3 mTorr and keep it for 1 minute. The sputtering power is gradually increased to 300 W, and pre-sputtering is performed for 180 seconds to ensure that the oxides and contaminants on the surface of the target are removed. After the sputtering rate is kept stable, a titanium film with a thickness of 50 nm is sputtered onto the substrate. After the sputtering is completed, the sputtering onto the substrate is stopped, and the sputtering power is adjusted to off, the argon gas is turned off, and the system vacuum is reduced to the background vacuum. Wait for the system to cool down, and then the prepared sample is taken out.
[0088] Fix the deposited superconducting thin film sample on the anodizing equipment, connect the sample to the anode, use a titanium plate as the cathode, with the side of the superconducting thin film facing the cathode, and ensure good contact between the superconducting thin film of the sample and the titanium plate with the anode and cathode of the power supply respectively. Immerse it in the prepared anodizing solution.
[0089] In the embodiment, a constant current oxidation mode is adopted, and the given current density is 1 . Oxidize the sample for different times, and record the maximum value that the sample voltage can reach. When the anodizing time on the sample reaches the experimental setting time, stop anodizing. Take out the sample, rinse it with deionized water and dry it.
[0090] Please refer to Figure 2 , Figure 2 To characterize the superconducting transition temperature of the prepared sample, the superconducting transition temperature of the sample shows an obvious decreasing trend with the increase of the oxidation time.
[0091] The method for regulating the superconducting transition temperature provided by this application provides a more economical and lower-threshold means for regulating the superconducting transition temperature compared with traditional regulation means that require various metals, precious metals or expensive ion implantation equipment. At the same time, the oxide layer formed by anodization is tighter, effectively preventing problems such as aging and performance degradation during the storage or use of the device.
[0092] It should be understood that although Figure 1 the steps in the flowchart of Figure 1 are shown in sequence according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise clearly stated in this article, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover,
[0093] At least a part of the steps in
[0094] Please refer to Figure 3, in an exemplary embodiment, a device for regulating the superconducting transition temperature is provided, including: a substrate providing module 10, a superconducting thin film forming module 20, and an oxidation module 30. The substrate providing module 10 is configured to provide a substrate; the superconducting thin film forming module 20 is configured to perform magnetron sputtering on the substrate to form a superconducting thin film, and the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate; the oxidation module 30 is configured to place the target superconducting thin film in an anodic oxidation tank for oxidation at a target constant voltage or a target constant current. An electrolyte is stored in the anodic oxidation tank. The superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0095] Each module in the above device for regulating the superconducting transition temperature can be implemented in whole or in part by software, hardware, and their combination. Each of the above modules can be embedded in or independent of a processor in a computer device in the form of hardware, or stored in a memory in the computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.
[0096] In an exemplary embodiment, a computer device is provided, and the computer device can be a terminal. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit, and an input device. Among them, the processor, the memory, and the input / output interface are connected through a system bus, and the communication interface, the display unit, and the input device are connected to the system bus through the input / output interface. Among them, the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used for exchanging information between the processor and external devices. The communication interface of the computer device is used for communicating with an external terminal in a wired or wireless manner, and the wireless manner can be achieved through WIFI, a mobile cellular network, near field communication (NFC), or other technologies. When the computer program is executed by the processor, it implements a water turbine top cover drainage control method. The display unit of the computer device is configured to form a visually visible picture, which can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer covering the display screen, or a button, a trackball, or a touchpad provided on the housing of the computer device, or an external keyboard, touchpad, or mouse, etc.
[0097] Those skilled in the art can understand, Figure 4The structure shown is only a block diagram of some structures related to the solution of this application, and does not constitute a limitation on the computer device to which the solution of this application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine some components, or have a different component layout.
[0098] In an exemplary embodiment, a computer device is provided, including a memory and a processor. A computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:
[0099] Provide a substrate;
[0100] Perform magnetron sputtering on the substrate to form a superconducting thin film, where the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate;
[0101] Place the target superconducting thin film in an anodic oxidation tank and oxidize it at a target constant voltage or a target constant current. An electrolyte is stored in the anodic oxidation tank. The superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0102] In an embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented:
[0103] Provide a substrate;
[0104] Perform magnetron sputtering on the substrate to form a superconducting thin film, where the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate;
[0105] Place the target superconducting thin film in an anodic oxidation tank and oxidize it at a target constant voltage or a target constant current. An electrolyte is stored in the anodic oxidation tank. The superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0106] In an embodiment, a computer program product is provided, including a computer program. When the computer program is executed by a processor, the following steps are implemented:
[0107] Provide a substrate;
[0108] Perform magnetron sputtering on the substrate to form a superconducting thin film, where the superconducting thin film includes a substrate and a superconducting thin film layer located on the substrate;
[0109] Place the target superconducting thin film in an anodic oxidation tank and oxidize it at a target constant voltage or a target constant current. An electrolyte is stored in the anodic oxidation tank. The superconducting thin film layer of the superconducting thin film faces the cathode, and the substrate of the superconducting thin film is fixed to the anode.
[0110] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The processors involved in the embodiments provided in the present application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, artificial intelligence (AI) processors, etc., without limitation.
[0111] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in the present application. The above embodiments only represent several implementation manners of the present disclosure. Their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present disclosure, several modifications and improvements can still be made, and these all belong to the protection scope of the present disclosure. Therefore, the protection scope of the patent of the present disclosure should be subject to the appended claims.
Claims
1. A method for controlling superconducting transition temperature, characterized in that: The method comprises: providing a substrate; Performing magnetron sputtering on the substrate to form a superconducting film, wherein the superconducting film includes a substrate and a superconducting film layer located on the substrate; The target superconducting film is placed in an anodic oxidation tank for oxidation at a target constant voltage or a target constant current. The anodic oxidation tank stores an electrolyte. The superconducting film layer of the superconducting film faces the cathode, and the substrate of the superconducting film is fixed to the anode.
2. The method according to claim 1, characterized in that The substrate is subjected to magnetron sputtering, comprising: Fixing the substrate and the target material in a magnetron sputtering device; Closing the magnetron sputtering chamber and making the magnetron sputtering chamber reach background vacuum; Inputting argon gas into the magnetron sputtering chamber to stabilize the gas pressure in the chamber at a target gas pressure; Applying a target power to the target material to perform pre-sputtering for a target time; Sputtering is performed on the substrate to form a superconducting thin film layer with a target thickness on the substrate.
3. The method according to claim 2, characterized in that The method further comprises: Stop sputtering and stop inputting argon gas; The magnetron sputtering chamber is controlled to reach a background vacuum and the system is waited for cooling.
4. The method according to claim 3, characterized in that The background vacuum degree is E-9 Torr.
5. The method according to claim 2, characterized in that: The target gas pressure is 2 mTorr-4 mTorr.
6. The method according to claim 2, characterized in that The target power is 250 W-350 W, and the target time is 160 s-220 s.
7. The method according to claim 2, characterized in that: The target thickness is 40 nm-60 nm.
8. The method according to claim 1, characterized in that: The electrolyte comprises: ammonium pentaborate, ethylene glycol, and deionized water. The weight of the ammonium pentaborate is 350 g to 440 g, the weight of the ethylene glycol is 2 L to 3 L, and the weight of the deionized water is 1.5 L to 2.3 L.
9. The method according to claim 1, characterized in that: The target constant current is 0.4 -1.5 .
10. The method according to claim 1, characterized in that The target constant voltage is 4V-30V.