Diode performance test method and device, computer equipment, readable storage medium and program product

Abstract

The invention relates to a diode performance test method and device, computer equipment, a computer readable storage medium and a computer program product. The method comprises the following steps: based on first working condition data of a vehicle diode, controlling an environment temperature and a backward voltage of a detected diode; if the leakage current of the tested diode is smaller than the preset current, controlling the backward voltage and the chip junction temperature of the tested diode based on the second working condition data of the vehicle diode; if the steady-state leakage current density and the pulse response delay duration of the tested diode meet the corresponding preset conditions, the environment temperature and the backward voltage pulse of the tested diode are controlled based on the third working condition data of the vehicle diode; and if the number of times that the detected diode is broken down by the backward voltage pulse and the change rate of the insulation resistance meet the corresponding preset conditions, determining the detected diode as a vehicle gauge level diode. According to the method provided by the invention, the test efficiency can be improved, and the tested diode can be comprehensively detected.

Description

Technical Field

[0001] The present application relates to the technical field of power electronic device testing, and in particular to a diode performance testing method, apparatus, computer equipment, computer-readable storage medium, and computer program product. Background Art

[0002] Silicon carbide (SiC) diodes, thanks to their wide bandgap material properties, exhibit significant advantages in the high-voltage electrical systems of new energy vehicles: their breakdown electric field strength (3 MV / cm) is 10 times that of silicon, supporting high-voltage platforms exceeding 1200V; their maximum junction temperature tolerance reaches 250°C, making them suitable for long-term operation in high-temperature scenarios; and their near-zero reverse recovery charge (Qrr) increases the efficiency of on-board charging systems to over 97%. Therefore, SiC diodes are often used in high-frequency applications such as the freewheeling circuit of electric drive inverters, on-board charger rectifier modules, and DC-DC converters. To better apply SiC diodes to the high-voltage electrical systems of new energy vehicles, their performance needs to be tested.

[0003] Existing methods for testing SiC diodes often place the diodes in a fixed temperature environment and apply a fixed voltage to them. For example, a High Temperature Reversed Bending Test (HTRB), a test method used to evaluate the bending resistance of materials in high-temperature environments, is performed by subjecting the SiC diodes to an ambient temperature of 175°C and applying a reverse voltage of 80% of VR (rated reverse voltage). However, this method cannot test the performance of SiC diodes under different operating conditions, resulting in low testing efficiency. Summary of the Invention

[0004] Based on this, it is necessary to provide a diode performance testing method, apparatus, computer equipment, computer-readable storage medium and computer program product that can improve the test efficiency of diode testing in order to address the above technical problems.

[0005] In a first aspect, the present application provides a diode performance testing method, the method comprising:

[0006] Based on first operating condition data of a vehicle diode in a high-voltage electrical system of a new energy vehicle, periodically adjusting the ambient temperature of an environment in which the diode under test is located and the reverse voltage applied thereto; wherein the first operating condition data includes first reverse voltage data of the vehicle diode and first temperature data of the environment in which the diode is located when the high-voltage electrical system is in a fast charging cycle;

[0007] If the leakage current of the diode under test is less than a preset current after the periodic adjustment is completed, then, for a first preset time period, based on second operating condition data of the vehicle diode, a constant first reverse voltage is applied to the diode under test, and the chip junction temperature of the diode under test is controlled; wherein the second operating condition data includes the chip junction temperature of the vehicle diode and the second reverse voltage data when the high-voltage electrical system is under full-load operation;

[0008] If, within a first preset time period, the steady-state leakage current density of the diode under test is not greater than a preset current density and the pulse response delay is not greater than a preset delay, then, based on third operating condition data of the vehicle diode, controlling the ambient temperature of the environment in which the diode under test is located, and applying a first preset number of reverse voltage pulses to the diode under test; wherein the third operating condition data includes third reverse voltage data of the vehicle diode and second temperature data of the environment in which the diode is located when the high-voltage electrical system is in a cold start condition;

[0009] If the number of times the diode under test is broken down by the reverse voltage pulse is less than the second preset number, and the insulation resistance change rate of the diode under test is not greater than the preset change rate each time the reverse voltage pulse is applied to the diode under test, the diode under test is determined to be an automotive-grade diode.

[0010] In one embodiment, the first reverse voltage data includes a reverse voltage upper limit, a reverse voltage lower limit, and a voltage rise rate; the first temperature data includes a temperature upper limit, a temperature lower limit, a temperature rise rate, and a temperature drop rate; based on the first operating condition data of a vehicle diode in a high-voltage electrical system of a new energy vehicle, periodically adjusting the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied thereto includes:

[0011] In each adjustment cycle, the reverse voltage applied to the diode under test is adjusted based on the reverse voltage upper limit, the reverse voltage lower limit and the voltage rise rate, and the ambient temperature of the environment in which the diode under test is located is adjusted based on the temperature upper limit, the temperature lower limit, the temperature rise rate and the temperature drop rate.

[0012] In one embodiment, the method further comprises:

[0013] When the number of adjustment cycles reaches a third preset number, or the total adjustment time reaches a second preset time, the periodic adjustment process of the diode under test is terminated.

[0014] In one embodiment, in each adjustment cycle, adjusting the reverse voltage applied to the diode under test based on the reverse voltage upper limit, the reverse voltage lower limit, and the voltage rise rate includes:

[0015] At the beginning of the adjustment cycle, a reverse voltage of the upper limit of the reverse voltage is applied to the diode under test;

[0016] Based on the voltage increase rate, the reverse voltage applied to the diode under test is increased until the reverse voltage applied to the diode under test increases to the reverse voltage upper limit value.

[0017] In one embodiment, in each adjustment cycle, adjusting the ambient temperature of the environment in which the diode under test is located based on the temperature upper limit value, the temperature lower limit value, the temperature increase rate, and the temperature decrease rate includes:

[0018] At the beginning of the adjustment cycle, the ambient temperature of the environment in which the diode under test is located is adjusted to the lower temperature limit;

[0019] Based on the temperature increase rate, the ambient temperature of the environment in which the diode under test is located is increased until the ambient temperature of the environment in which the diode under test is located is increased to the upper temperature limit;

[0020] When the ambient temperature of the environment where the diode under test is located increases to the upper temperature limit, the ambient temperature of the environment where the diode under test is located is reduced based on the temperature drop rate until the ambient temperature of the environment where the diode under test is located drops to the lower temperature limit.

[0021] In one embodiment, the second reverse voltage data is a constant second reverse voltage, and a ratio between the second reverse voltage and an avalanche breakdown threshold of a vehicle diode is a preset ratio.

[0022] In a second aspect, the present application further provides a diode performance testing device, comprising:

[0023] a regulation module for periodically regulating an ambient temperature and an applied reverse voltage of an environment in which a diode under test is located based on first operating condition data of a vehicle diode in a high-voltage electrical system of a new energy vehicle, wherein the first operating condition data includes first reverse voltage data of the vehicle diode and first temperature data of the environment in which the diode is located when the high-voltage electrical system is in a fast-charging cycle;

[0024] a first control module configured to apply a constant first reverse voltage to the diode under test and control a chip junction temperature of the diode under test based on second operating condition data of the vehicle diode for a first preset time period if the leakage current of the diode under test is less than a preset current after the periodic adjustment is completed, wherein the second operating condition data includes the chip junction temperature of the vehicle diode and the second reverse voltage data when the high-voltage electrical system is operating at full load;

[0025] a second control module configured to control the ambient temperature of an environment in which the diode under test is located, and apply a first preset number of reverse voltage pulses to the diode under test based on third operating condition data of the vehicle diode, if the steady-state leakage current density of the diode under test is not greater than a preset current density and the pulse response delay is not greater than a preset delay within a first preset time period; wherein the third operating condition data includes third reverse voltage data of the vehicle diode and second temperature data of the environment in which the diode is located when the high-voltage electrical system is in a cold start condition;

[0026] A determination module is used to determine that the diode under test is an automotive-grade diode if the number of times the diode under test is broken down by a reverse voltage pulse is less than a second preset number, and the rate of change of the insulation resistance of the diode under test is not greater than a preset rate of change each time a reverse voltage pulse is applied to the diode under test.

[0027] In a third aspect, the present application further provides a computer device, which includes a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the method in any of the above embodiments when executing the computer program.

[0028] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the method in any one of the above embodiments.

[0029] In a fifth aspect, the present application further provides a computer program product, which includes a computer program that implements the steps of the method in any one of the above embodiments when executed by a processor.

[0030] The above-mentioned diode performance testing method, device, computer equipment, computer-readable storage medium and computer program product, based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, periodically adjusts the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied; wherein, the first operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a fast charging cycle condition; if after the periodic adjustment is completed, the leakage current of the diode under test is less than the preset current, then within the first preset time period, based on the second operating condition data of the vehicle diode, a constant first reverse voltage is applied to the diode under test, and the chip junction temperature of the diode under test is controlled; wherein, the second operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a full-load operating condition. , the chip junction temperature and the second reverse voltage data of the vehicle diode; if within the first preset time, the steady-state leakage current density of the diode under test is not greater than the preset current density, and the pulse response delay time is not greater than the preset delay time, then based on the third operating condition data of the vehicle diode, the ambient temperature of the environment in which the diode under test is located is controlled, and a first preset number of reverse voltage pulses are applied to the diode under test; wherein the third operating condition data includes the third reverse voltage data of the vehicle diode and the second temperature data of the environment in which the high-voltage electrical system is in a cold start condition; if the number of times the diode under test is broken down by the reverse voltage pulse is less than the second preset number, and in the process of each application of the reverse voltage pulse to the diode under test, the insulation resistance change rate of the diode under test is not greater than the preset change rate, then the diode under test is determined to be an automotive-grade diode. The method provided in the present application obtains the operating condition data of the vehicle diode when the high-voltage electrical system is in different operating conditions, and performs performance testing on the diode under test based on the obtained operating condition data. This can not only improve the test efficiency, but also comprehensively detect the diode under test, so that the final determined automotive-grade diode can meet the performance requirements of the high-voltage electrical system under different operating conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments of the present application or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying any creative work.

[0032] Figure 1 1 is a flow chart of a diode performance testing method according to an embodiment;

[0033] Figure 2 1 is a flow chart of a reverse voltage regulation method according to an embodiment;

[0034] Figure 3 A schematic diagram of temperature and voltage changes in another embodiment;

[0035] Figure 4 A structural block diagram of a diode performance testing device according to an embodiment;

[0036] Figure 5 FIG. 1 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0038] In one embodiment, Figure 1 As shown, a diode performance testing method is provided. This embodiment uses the method applied to a terminal as an example for illustration. It is understandable that the method can also be applied to a server, or to a system including a terminal and a server, and implemented through interaction between the terminal and the server. In this embodiment, the method includes the following steps:

[0039] S102. Based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, periodically adjust the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied; wherein the first operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which it is located when the high-voltage electrical system is in a fast charging cycle condition.

[0040] Optionally, the vehicle diode and the diode under test in this embodiment may be, but are not limited to, silicon carbide diodes.

[0041] Optionally, by periodically adjusting the ambient temperature of the environment in which the diode under test is located and the applied reverse voltage, it is possible to simulate the working environment of the diode under test when the diode under test is in a high-voltage electrical system and the high-voltage electrical system is in a fast charging cycle condition, thereby reproducing the stress coupling effect of the diode under test in the fast charging scenario.

[0042] S104. If the leakage current of the diode under test is less than the preset current after the periodic adjustment is completed, then within a first preset time period, based on the second operating condition data of the vehicle diode, a constant first reverse voltage is applied to the diode under test and the chip junction temperature of the diode under test is controlled; wherein the second operating condition data includes the chip junction temperature and second reverse voltage data of the vehicle diode when the high-voltage electrical system is in a full-load operating condition.

[0043] Among them, leakage current refers to the phenomenon that during the fast charging process, due to circuit design, component characteristics or insulation problems, the current leaks from the normal charging path to other paths; the chip junction temperature refers to the temperature of the PN junction inside the diode.

[0044] Optionally, during the periodic adjustment process, the leakage current change of the diode under test is monitored in real time. If the increase in the leakage current is ≥10% and cannot be recovered within a certain adjustment cycle, the diode under test is determined to be failed.

[0045] Optionally, when the high-voltage electrical system is operating at full load, a constant high voltage near the breakdown threshold is applied to the vehicle diode in the high-voltage electrical system at an extreme temperature. The extreme temperature here refers to the junction temperature of the vehicle diode, and the constant high voltage is a second reverse voltage. For example, the junction temperature of the vehicle diode can be 175°C (with a control accuracy of ±3°C), and the second reverse voltage can be 115% VR (95% of the avalanche breakdown threshold). For a first preset duration, the second reverse voltage is used as the constant first reverse voltage applied to the diode under test, and the junction temperature of the vehicle diode is used as the junction temperature of the diode under test. This simulates the operating environment of the diode under test in a high-voltage electrical system operating at full load, thereby accelerating the testing of the intrinsic material defects and long-term high-temperature stability of the diode under test. The first preset duration may be, but is not limited to, 96 hours.

[0046] S106. If, within a first preset time period, the steady-state leakage current density of the diode under test is not greater than the preset current density, and the pulse response delay time is not greater than the preset delay time, then based on the third operating condition data of the vehicle diode, the ambient temperature of the environment in which the diode under test is located is controlled, and a first preset number of reverse voltage pulses are applied to the diode under test; wherein the third operating condition data includes the third reverse voltage data of the vehicle diode and the second temperature data of the environment in which the high-voltage electrical system is located when the high-voltage electrical system is in a cold start condition.

[0047] Among them, the steady-state leakage current density of a diode refers to the tiny current flowing through a unit area after the diode reaches a thermal equilibrium state under reverse bias or a small forward bias.

[0048] Optionally, when the steady-state leakage current density of the diode under test is greater than a preset current density, or the pulse response delay time is greater than a preset delay time, the diode under test is determined to be failed. For example, the preset current density may be 1 mA / mm², and the preset delay time may be 200 ns.

[0049] Optionally, during a cold start of the high-voltage electrical system, the vehicle's diodes may be subjected to surge shocks caused by multiple reverse voltage pulses in a low-temperature environment. The low temperature corresponding to the low-temperature environment is referred to as the second temperature data, and the multiple reverse voltage pulses are referred to as the third reverse voltage data. For example, the second temperature data may be a constant temperature of -40°C (with a control accuracy of ±2°C), and the third reverse voltage data may be reverse voltage pulses of 130% VR (pulse width 10μs, rise time 1ns), with a pulse interval of 5 seconds, for a cumulative total of 1000 surges. The second temperature data is used as the ambient temperature of the environment in which the diode under test is located, and the third reverse voltage data is used as the first predetermined number of reverse voltage pulses applied to the diode under test. This simulates the operating environment of the diode under test in a high-voltage electrical system under cold start conditions, thereby evaluating the avalanche withstand capability and insulation degradation trend of the diode under test in a low-temperature environment. The first predetermined number of pulses may be, but is not limited to, 1000.

[0050] S108. If the number of times the diode under test is broken down by the reverse voltage pulse is less than a second preset number, and the insulation resistance change rate of the diode under test is not greater than the preset change rate during each application of the reverse voltage pulse to the diode under test, the diode under test is determined to be an automotive-grade diode.

[0051] Optionally, if the number of times the diode under test is broken down by the reverse voltage pulse is not less than a second preset number, or if the rate of change of the insulation resistance of the diode under test is greater than a preset rate of change during the process of applying the reverse voltage pulse to the diode under test, the diode under test is determined to be failed. For example, the second preset number is 3 times and the preset rate of change is 30%.

[0052] In the above-mentioned diode performance test method, based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied are periodically adjusted; wherein, the first operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a fast charging cycle condition; if after the periodic adjustment is completed and the leakage current of the diode under test is less than the preset current, then within the first preset time period, based on the second operating condition data of the vehicle diode, a constant first reverse voltage is applied to the diode under test, and the chip junction temperature of the diode under test is controlled; wherein, the second operating condition data includes the chip junction temperature of the vehicle diode and the second operating condition data when the high-voltage electrical system is in a full-load operating condition. Second reverse voltage data; if within a first preset time period, the steady-state leakage current density of the diode under test is not greater than a preset current density, and the pulse response delay time is not greater than a preset delay time period, then based on the third operating condition data of the vehicle diode, the ambient temperature of the environment in which the diode under test is located is controlled, and a first preset number of reverse voltage pulses are applied to the diode under test; wherein the third operating condition data includes the third reverse voltage data of the vehicle diode and the second temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a cold start operating condition; if the number of times the diode under test is broken down by the reverse voltage pulse is less than a second preset number, and the rate of change of the insulation resistance of the diode under test during each application of the reverse voltage pulse to the diode under test is not greater than a preset rate of change, then the diode under test is determined to be an automotive-grade diode. The method provided in this application obtains operating condition data of the vehicle diode when the high-voltage electrical system is in different operating conditions, and performs performance testing on the diode under test based on the obtained operating condition data. This can not only improve test efficiency, but also comprehensively detect the diode under test, so that the ultimately determined automotive-grade diode can meet the performance requirements of the high-voltage electrical system under different operating conditions.

[0053] In some embodiments, the first reverse voltage data includes a reverse voltage upper limit value, a reverse voltage lower limit value, and a voltage rise rate, and the first temperature data includes a temperature upper limit value, a temperature lower limit value, a temperature rise rate, and a temperature drop rate; based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied are periodically adjusted, including: in each adjustment cycle, based on the reverse voltage upper limit value, the reverse voltage lower limit value, and the voltage rise rate, the reverse voltage applied to the diode under test is adjusted, and the ambient temperature of the environment in which the diode under test is located is adjusted based on the temperature upper limit value, the temperature lower limit value, the temperature rise rate, and the temperature drop rate.

[0054] Optionally, the first reverse voltage data may be, but is not limited to: a reverse voltage upper limit of 110% VR, a reverse voltage lower limit of 80% VR, and a voltage increase rate of 5% VR every 10 minutes; the first temperature data may be, but is not limited to: a temperature upper limit of 200°C, a temperature lower limit of 25°C, a temperature increase rate of 30°C / min, and a temperature decrease rate of 20°C / min.

[0055] Optionally, in each adjustment cycle, the ambient temperature of the environment in which the diode under test is located and the applied reverse voltage are synchronously adjusted based on the first reverse voltage data and the first temperature data.

[0056] In this embodiment, by periodically adjusting the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied, the package interface fatigue and transient overvoltage tolerance of the diode under test can be effectively tested.

[0057] In some embodiments, the method further includes: ending the periodic adjustment process of the diode under test when the number of adjustment cycles reaches a third preset number or the total adjustment duration reaches a second preset duration.

[0058] Optionally, the third preset number may be but is not limited to 500 times, and the second preset time may be but is not limited to 120 hours.

[0059] Optionally, if the number of adjustment cycles reaches a third preset number, or the total adjustment duration reaches a second preset duration, it means that the working environment of the diode under test under the fast charging cycle condition has been fully simulated.

[0060] In this embodiment, when the number of adjustment cycles reaches the third preset number or the total adjustment time reaches the second preset time, the periodic adjustment process of the diode under test is terminated, which can effectively test the packaging interface fatigue and transient overvoltage tolerance of the diode under test.

[0061] In some embodiments, as Figure 2 As shown, in each adjustment cycle, the reverse voltage applied to the diode under test is adjusted based on the reverse voltage upper limit, the reverse voltage lower limit, and the voltage rise rate, including:

[0062] S202 : At the beginning of the adjustment cycle, a reverse voltage of an upper limit value of the reverse voltage is applied to the diode under test.

[0063] S204 : increasing the reverse voltage applied to the diode under test based on the voltage increasing rate until the reverse voltage applied to the diode under test increases to an upper limit value of the reverse voltage.

[0064] Optionally, a voltage ramp test is performed on the reverse voltage applied to the diode under test during each adjustment cycle. Specifically, the reverse voltage starts at 80% VR and increases by 5% VR every 10 minutes until it reaches an upper limit of 110% VR.

[0065] In this embodiment, by adjusting the reverse voltage applied to the diode under test based on the reverse voltage upper limit, the reverse voltage lower limit, and the voltage rise rate, the performance of the diode under test can be more fully tested.

[0066] In some embodiments, within each adjustment cycle, the ambient temperature of the environment in which the diode under test is located is adjusted based on the temperature upper limit value, the temperature lower limit value, the temperature rise rate, and the temperature fall rate, including: at the start of the adjustment cycle, the ambient temperature of the environment in which the diode under test is located is adjusted to the temperature lower limit value; based on the temperature rise rate, the ambient temperature of the environment in which the diode under test is located is increased until the ambient temperature of the environment in which the diode under test is located rises to the temperature upper limit value; when the ambient temperature of the environment in which the diode under test is located rises to the temperature upper limit value, based on the temperature fall rate, the ambient temperature of the environment in which the diode under test is located is decreased until the ambient temperature of the environment in which the diode under test is located drops to the temperature lower limit value.

[0067] Optionally, within each adjustment cycle, the ambient temperature of the environment in which the diode under test is located will be fully temperature-adjusted, specifically: the initial temperature of the environment in which the diode under test is located is set to 25°C, and then the temperature is increased at a heating rate of 30°C / min. After the temperature reaches 200°C, the temperature is cooled at a cooling rate of 20°C / min until the temperature of the environment in which the diode under test is located returns to 25°C.

[0068] In this embodiment, by adjusting the ambient temperature of the environment in which the diode under test is located based on the temperature upper limit value, the temperature lower limit value, the temperature increase rate, and the temperature decrease rate, the performance of the diode under test can be more fully tested.

[0069] In some embodiments, the second reverse voltage data is a constant second reverse voltage, and a ratio between the second reverse voltage and an avalanche breakdown threshold of the vehicle diode is a preset ratio.

[0070] In one embodiment, another diode performance test method is provided, wherein the temperature and voltage variation diagram in the method is as follows: Figure 3 As shown, the method includes the following contents:

[0071] Step 1: Dynamic temperature-pressure coupling loading (simulating fast charging cycle conditions)

[0072] In this stage, the stress coupling effect in the fast charging scenario is reproduced by synchronously loading temperature cycles and step voltages. The temperature range is set to 25°C to 200°C, the heating rate is 30°C / min, and the cooling rate is 20°C / min. The reverse voltage starts from 80% VR and increases by 5% VR every 10 minutes until it reaches the upper limit of 110% VR. A single cycle includes a complete temperature change (25°C→200°C→25°C) and a synchronous voltage ramp process, with a total of 500 cycles (total duration of 120 hours). During the test, the leakage current change is monitored in real time. If the leakage current increase within a single cycle is ≥10% and cannot be recovered, the device is deemed to have failed. This stage focuses on stimulating package interface fatigue and transient overvoltage tolerance degradation.

[0073] Step 2: High temperature constant pressure limit loading (simulating full load operation)

[0074] This phase applies a constant high voltage close to the breakdown threshold at extreme temperatures, simulating continuous full-load operation of a high-voltage system. The chip junction temperature is set at 175°C (control accuracy ±3°C), and a constant reverse voltage of 115% VR (95% of the avalanche breakdown threshold) is applied for 96 hours. Monitoring metrics include steady-state leakage current density (threshold > 1mA / mm²) and pulse response delay time (threshold > 200ns). Exceeding either limit results in failure. This phase conducts accelerated testing for intrinsic material defects and long-term high-temperature stability.

[0075] Step 3: Low temperature and high pressure shock loading (simulating cold start surge)

[0076] During this phase, high-voltage pulses are applied in a low-temperature environment to simulate the surge shock experienced during a cold start. The temperature is maintained at -40°C (control accuracy ±2°C), and reverse voltage pulses (130% VR, pulse width 10μs, rise time 1ns) are applied with a 5-second interval between pulses for a cumulative total of 1000 pulses. During the test, the number of device breakdowns (≥3 cumulative breakdowns considered failure) and the rate of change in insulation resistance (a decrease >30% considered failure) are recorded. This phase focuses on evaluating the device's avalanche withstand capability and insulation degradation trends in low-temperature environments.

[0077] It should be understood that, although the various steps in the flowcharts involved in the various embodiments described above are displayed in sequence according to the instructions of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowcharts involved in the various embodiments described above can include multiple steps or multiple stages, and these steps or stages are not necessarily executed and completed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of steps or stages in other steps.

[0078] Based on the same inventive concept, embodiments of the present application also provide a diode performance testing device for implementing the aforementioned diode performance testing method. The solution provided by this device is similar to the solution described in the aforementioned method. Therefore, the specific limitations of one or more diode performance testing device embodiments provided below can be found in the above-described limitations of the diode performance testing method and will not be further elaborated here.

[0079] In an exemplary embodiment, Figure 4 As shown, a diode performance testing device 400 is provided, comprising: an adjustment module 401, a first control module 402, a second control module 403 and a determination module 404, wherein:

[0080] The adjustment module 401 is used to periodically adjust the ambient temperature and the applied reverse voltage of the environment in which the diode under test is located based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle; wherein the first operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which it is located when the high-voltage electrical system is in a fast charging cycle condition.

[0081] The first control module 402 is used to apply a constant first reverse voltage to the diode under test and control the chip junction temperature of the diode under test based on the second operating condition data of the vehicle diode within a first preset time period if the leakage current of the diode under test is less than the preset current after the periodic adjustment is completed; wherein the second operating condition data includes the chip junction temperature and second reverse voltage data of the vehicle diode when the high-voltage electrical system is in a full-load operating condition.

[0082] The second control module 403 is used to control the ambient temperature of the environment in which the diode under test is located, and apply a first preset number of reverse voltage pulses to the diode under test based on the third operating condition data of the vehicle diode, if the steady-state leakage current density of the diode under test is not greater than the preset current density and the pulse response delay time is not greater than the preset delay time within a first preset time period; wherein the third operating condition data includes the third reverse voltage data of the vehicle diode and the second temperature data of the environment in which the high-voltage electrical system is located when the high-voltage electrical system is in a cold start condition.

[0083] Determination module 404 is used to determine that the diode under test is an automotive-grade diode if the number of times the diode under test is broken down by the reverse voltage pulse is less than a second preset number, and the rate of change of the insulation resistance of the diode under test is not greater than the preset rate of change each time the reverse voltage pulse is applied to the diode under test.

[0084] In some embodiments, the first reverse voltage data includes a reverse voltage upper limit value, a reverse voltage lower limit value, and a voltage increase rate; the first temperature data includes a temperature upper limit value, a temperature lower limit value, a temperature increase rate, and a temperature decrease rate; the adjustment module 401 includes:

[0085] The regulating unit is used to regulate the reverse voltage applied to the diode under test based on the reverse voltage upper limit, the reverse voltage lower limit and the voltage rise rate in each regulation cycle, and to regulate the ambient temperature of the environment in which the diode under test is located based on the temperature upper limit, the temperature lower limit, the temperature rise rate and the temperature drop rate.

[0086] In some embodiments, the adjustment module 401 is configured to terminate the periodic adjustment process of the diode under test when the number of adjustment cycles reaches a third preset number or the total adjustment duration reaches a second preset duration.

[0087] In some embodiments, the adjustment module 401 is further used to apply a reverse voltage of an upper limit value of the reverse voltage to the diode under test at the beginning of the adjustment cycle; and increase the reverse voltage applied to the diode under test based on the voltage increase rate until the reverse voltage applied to the diode under test increases to the upper limit value of the reverse voltage.

[0088] In some embodiments, the adjustment module 401 is further used to adjust the ambient temperature of the environment in which the diode under test is located to the lower temperature limit at the beginning of the adjustment cycle; increase the ambient temperature of the environment in which the diode under test is located based on the temperature increase rate until the ambient temperature of the environment in which the diode under test is located rises to the upper temperature limit; when the ambient temperature of the environment in which the diode under test is located rises to the upper temperature limit, reduce the ambient temperature of the environment in which the diode under test is located based on the temperature decrease rate until the ambient temperature of the environment in which the diode under test is located drops to the lower temperature limit.

[0089] In some embodiments, the diode performance testing device 400 is specifically used when the second reverse voltage data is a constant second reverse voltage, and the ratio between the second reverse voltage and the avalanche breakdown threshold of the vehicle diode is a preset ratio.

[0090] Each module in the diode performance test device can be implemented in whole or in part through software, hardware, or a combination thereof. Each module can be embedded in or independent of a processor in a computer device in hardware form, or can be stored in a computer device memory in software form, so that the processor can call and execute the corresponding operations of each module.

[0091] In an exemplary embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as shown in FIG. Figure 5 As shown. The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. The processor, the memory and the input / output interface are connected via a system bus, and the communication interface, the display unit and the input device are connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal in a wired or wireless manner. The wireless manner can be implemented through WIFI, a mobile cellular network, near field communication (NFC) or other technologies. When the computer program is executed by the processor, a diode performance testing method is implemented.

[0092] Those skilled in the art will understand that Figure 5 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0093] In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and the processor implements the following steps when executing the computer program: based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied are periodically adjusted; wherein the first operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the high-voltage electrical system is located when the high-voltage electrical system is in a fast charging cycle condition; if after the periodic adjustment is completed, the leakage current of the diode under test is less than the preset current, then within the first preset time period, based on the second operating condition data of the vehicle diode, a constant first reverse voltage is applied to the diode under test, and the chip junction temperature of the diode under test is controlled; wherein the second operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a fast charging cycle condition; The chip junction temperature and the second reverse voltage data of the vehicle diode when it is in full-load operation; if within the first preset time, the steady-state leakage current density of the diode under test is not greater than the preset current density, and the pulse response delay time is not greater than the preset delay time, then based on the third operating condition data of the vehicle diode, the ambient temperature of the environment in which the diode under test is located is controlled, and a first preset number of reverse voltage pulses are applied to the diode under test; wherein the third operating condition data includes the third reverse voltage data of the vehicle diode and the second temperature data of the environment in which the high-voltage electrical system is in a cold start condition; if the number of times the diode under test is broken down by the reverse voltage pulse is less than the second preset number, and the insulation resistance change rate of the diode under test is not greater than the preset change rate during each application of the reverse voltage pulse to the diode under test, the diode under test is determined to be an automotive-grade diode.

[0094] In one embodiment, the first reverse voltage data implemented when the processor executes the computer program includes a reverse voltage upper limit value, a reverse voltage lower limit value, and a voltage rise rate, and the first temperature data includes a temperature upper limit value, a temperature lower limit value, a temperature rise rate, and a temperature drop rate; based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied are periodically adjusted, including: in each adjustment cycle, based on the reverse voltage upper limit value, the reverse voltage lower limit value, and the voltage rise rate, the reverse voltage applied to the diode under test is adjusted, and based on the temperature upper limit value, the temperature lower limit value, the temperature rise rate, and the temperature drop rate, the ambient temperature of the environment in which the diode under test is located is adjusted.

[0095] In one embodiment, the method implemented when the processor executes the computer program further includes: ending the periodic adjustment process of the diode under test when the number of adjustment cycles reaches a third preset number or the total adjustment duration reaches a second preset duration.

[0096] In one embodiment, when a processor executes a computer program, the reverse voltage applied to the diode under test is adjusted based on the reverse voltage upper limit value, the reverse voltage lower limit value and the voltage increase rate within each adjustment cycle, including: at the beginning of the adjustment cycle, applying a reverse voltage of the reverse voltage upper limit value to the diode under test; based on the voltage increase rate, increasing the reverse voltage applied to the diode under test until the reverse voltage applied to the diode under test increases to the reverse voltage upper limit value.

[0097] In one embodiment, the processor executes a computer program to adjust the ambient temperature of the environment in which the diode under test is located based on the temperature upper limit value, the temperature lower limit value, the temperature increase rate, and the temperature decrease rate within each adjustment cycle, including: at the start of the adjustment cycle, adjusting the ambient temperature of the environment in which the diode under test is located to the temperature lower limit value; increasing the ambient temperature of the environment in which the diode under test is located based on the temperature increase rate until the ambient temperature of the environment in which the diode under test is located reaches the temperature upper limit value; and when the ambient temperature of the environment in which the diode under test is located rises to the temperature upper limit value, decreasing the ambient temperature of the environment in which the diode under test is located based on the temperature decrease rate until the ambient temperature of the environment in which the diode under test is located drops to the temperature lower limit value.

[0098] In one embodiment, the second reverse voltage data achieved when the processor executes the computer program is a constant second reverse voltage, and a ratio between the second reverse voltage and an avalanche breakdown threshold of the vehicle diode is a preset ratio.

[0099] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented: based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied are periodically adjusted; wherein, the first operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a fast charging cycle condition; if after the periodic adjustment is completed, the leakage current of the diode under test is less than the preset current, then within the first preset time period, based on the second operating condition data of the vehicle diode, a constant first reverse voltage is applied to the diode under test, and the chip junction temperature of the diode under test is controlled; wherein, the second operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a fast charging cycle condition. Under the operating conditions of the vehicle diode, the chip junction temperature and the second reverse voltage data of the vehicle diode; if within the first preset time, the steady-state leakage current density of the diode under test is not greater than the preset current density, and the pulse response delay time is not greater than the preset delay time, then based on the third operating condition data of the vehicle diode, the ambient temperature of the environment in which the diode under test is located is controlled, and a first preset number of reverse voltage pulses are applied to the diode under test; wherein the third operating condition data includes the third reverse voltage data of the vehicle diode and the second temperature data of the environment in which the high-voltage electrical system is in a cold start condition; if the number of times the diode under test is broken down by the reverse voltage pulse is less than the second preset number, and in the process of each application of the reverse voltage pulse to the diode under test, the insulation resistance change rate of the diode under test is not greater than the preset change rate, then the diode under test is determined to be an automotive-grade diode.

[0100] In one embodiment, the first reverse voltage data implemented when the computer program is executed by the processor includes a reverse voltage upper limit value, a reverse voltage lower limit value, and a voltage rise rate, and the first temperature data includes a temperature upper limit value, a temperature lower limit value, a temperature rise rate, and a temperature drop rate; based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied are periodically adjusted, including: in each adjustment cycle, based on the reverse voltage upper limit value, the reverse voltage lower limit value, and the voltage rise rate, the reverse voltage applied to the diode under test is adjusted, and based on the temperature upper limit value, the temperature lower limit value, the temperature rise rate, and the temperature drop rate, the ambient temperature of the environment in which the diode under test is located is adjusted.

[0101] In one embodiment, the method implemented when the computer program is executed by the processor further includes: ending the periodic adjustment process of the diode under test when the number of adjustment cycles reaches a third preset number or the total adjustment duration reaches a second preset duration.

[0102] In one embodiment, the computer program implemented when executed by the processor adjusts the reverse voltage applied to the diode under test based on the reverse voltage upper limit value, the reverse voltage lower limit value and the voltage increase rate within each adjustment cycle, including: applying a reverse voltage of the reverse voltage upper limit value to the diode under test at the beginning of the adjustment cycle; and increasing the reverse voltage applied to the diode under test based on the voltage increase rate until the reverse voltage applied to the diode under test increases to the reverse voltage upper limit value.

[0103] In one embodiment, the computer program implemented when executed by the processor adjusts the ambient temperature of the environment in which the diode under test is located based on the temperature upper limit value, the temperature lower limit value, the temperature increase rate, and the temperature decrease rate within each adjustment cycle, including: at the start of the adjustment cycle, adjusting the ambient temperature of the environment in which the diode under test is located to the temperature lower limit value; increasing the ambient temperature of the environment in which the diode under test is located based on the temperature increase rate until the ambient temperature of the environment in which the diode under test is located reaches the temperature upper limit value; and when the ambient temperature of the environment in which the diode under test is located rises to the temperature upper limit value, decreasing the ambient temperature of the environment in which the diode under test is located based on the temperature decrease rate until the ambient temperature of the environment in which the diode under test is located drops to the temperature lower limit value.

[0104] In one embodiment, the second reverse voltage data achieved when the computer program is executed by the processor is a constant second reverse voltage, and a ratio between the second reverse voltage and an avalanche breakdown threshold of the vehicle diode is a preset ratio.

[0105] In one embodiment, a computer program product is provided, including a computer program, which implements the following steps when executed by a processor: based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied are periodically adjusted; wherein the first operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a fast charging cycle condition; if after the periodic adjustment is completed, the leakage current of the diode under test is less than the preset current, then within the first preset time period, based on the second operating condition data of the vehicle diode, a constant first reverse voltage is applied to the diode under test, and the chip junction temperature of the diode under test is controlled; wherein the second operating condition data includes the first reverse voltage data of the vehicle diode and the first temperature data of the environment in which the diode under test is located when the high-voltage electrical system is in a full-load operation condition. under the condition of cold start, the chip junction temperature and the second reverse voltage data of the vehicle diode; if within the first preset time, the steady-state leakage current density of the diode under test is not greater than the preset current density, and the pulse response delay time is not greater than the preset delay time, then based on the third operating condition data of the vehicle diode, the ambient temperature of the environment in which the diode under test is located is controlled, and a first preset number of reverse voltage pulses are applied to the diode under test; wherein, the third operating condition data includes the third reverse voltage data of the vehicle diode and the second temperature data of the environment in which the high-voltage electrical system is in a cold start condition; if the number of times the diode under test is broken down by the reverse voltage pulse is less than the second preset number, and in the process of each application of the reverse voltage pulse to the diode under test, the insulation resistance change rate of the diode under test is not greater than the preset change rate, then the diode under test is determined to be an automotive-grade diode.

[0106] In one embodiment, the first reverse voltage data implemented when the computer program is executed by the processor includes a reverse voltage upper limit value, a reverse voltage lower limit value, and a voltage rise rate, and the first temperature data includes a temperature upper limit value, a temperature lower limit value, a temperature rise rate, and a temperature drop rate; based on the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle, the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied are periodically adjusted, including: in each adjustment cycle, based on the reverse voltage upper limit value, the reverse voltage lower limit value, and the voltage rise rate, the reverse voltage applied to the diode under test is adjusted, and based on the temperature upper limit value, the temperature lower limit value, the temperature rise rate, and the temperature drop rate, the ambient temperature of the environment in which the diode under test is located is adjusted.

[0107] In one embodiment, the method implemented when the computer program is executed by the processor further includes: ending the periodic adjustment process of the diode under test when the number of adjustment cycles reaches a third preset number or the total adjustment duration reaches a second preset duration.

[0108] In one embodiment, the computer program implemented when executed by the processor adjusts the reverse voltage applied to the diode under test based on the reverse voltage upper limit value, the reverse voltage lower limit value and the voltage increase rate within each adjustment cycle, including: applying a reverse voltage of the reverse voltage upper limit value to the diode under test at the beginning of the adjustment cycle; and increasing the reverse voltage applied to the diode under test based on the voltage increase rate until the reverse voltage applied to the diode under test increases to the reverse voltage upper limit value.

[0109] In one embodiment, the computer program implemented when executed by the processor adjusts the ambient temperature of the environment in which the diode under test is located based on the temperature upper limit value, the temperature lower limit value, the temperature increase rate, and the temperature decrease rate within each adjustment cycle, including: at the start of the adjustment cycle, adjusting the ambient temperature of the environment in which the diode under test is located to the temperature lower limit value; increasing the ambient temperature of the environment in which the diode under test is located based on the temperature increase rate until the ambient temperature of the environment in which the diode under test is located reaches the temperature upper limit value; and when the ambient temperature of the environment in which the diode under test is located rises to the temperature upper limit value, decreasing the ambient temperature of the environment in which the diode under test is located based on the temperature decrease rate until the ambient temperature of the environment in which the diode under test is located drops to the temperature lower limit value.

[0110] In one embodiment, the second reverse voltage data achieved when the computer program is executed by the processor is a constant second reverse voltage, and a ratio between the second reverse voltage and an avalanche breakdown threshold of the vehicle diode is a preset ratio.

[0111] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant regulations.

[0112] Those skilled in the art will understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. In particular, any reference to memory, database, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The databases involved in the various embodiments provided herein may include at least one of a relational database and a non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the various embodiments provided herein may be, but are not limited to, general-purpose processors, central processing units (CPUs), graphics processing units (GPUs), digital signal processors (DSPs), programmable logic devices (PLDs), quantum computing-based data processing logic devices, artificial intelligence (AI) processors, and the like.

[0113] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0114] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A diode performance testing method, characterized in that: The method comprises: Based on first operating condition data of a vehicle diode in a high-voltage electrical system of a new energy vehicle, periodically adjusting the ambient temperature of an environment in which the diode under test is located and the reverse voltage applied thereto; wherein the first operating condition data includes first reverse voltage data of the vehicle diode and first temperature data of the environment in which the diode is located when the high-voltage electrical system is in a fast charging cycle; If, after the periodic adjustment is completed, the leakage current of the diode under test is less than a preset current, then, within a first preset time period, based on second operating condition data of the vehicle diode, applying a constant first reverse voltage to the diode under test and controlling the chip junction temperature of the diode under test; wherein the second operating condition data includes the chip junction temperature of the vehicle diode and second reverse voltage data when the high-voltage electrical system is in a full-load operating condition; If, within the first preset time period, the steady-state leakage current density of the diode under test is not greater than a preset current density, and the pulse response delay duration is not greater than a preset delay duration, then, based on third operating condition data of the vehicle diode, controlling the ambient temperature of the environment in which the diode under test is located, and applying a first preset number of reverse voltage pulses to the diode under test; wherein the third operating condition data includes third reverse voltage data of the vehicle diode and second temperature data of the environment in which the diode is located when the high-voltage electrical system is in a cold start condition; If the number of times the diode under test is broken down by the reverse voltage pulse is less than a second preset number, and the insulation resistance change rate of the diode under test is not greater than the preset change rate each time the reverse voltage pulse is applied to the diode under test, then the diode under test is determined to be an automotive-grade diode.

2. The method according to claim 1, characterized in that The first reverse voltage data includes a reverse voltage upper limit, a reverse voltage lower limit, and a voltage rise rate; the first temperature data includes a temperature upper limit, a temperature lower limit, a temperature rise rate, and a temperature drop rate; the first operating condition data of the vehicle diode in the high-voltage electrical system of the new energy vehicle periodically adjusts the ambient temperature of the environment in which the diode under test is located and the reverse voltage applied, including: In each adjustment cycle, the reverse voltage applied to the diode under test is adjusted based on the reverse voltage upper limit value, the reverse voltage lower limit value and the voltage rise rate, and the ambient temperature of the environment in which the diode under test is located is adjusted based on the temperature upper limit value, the temperature lower limit value, the temperature rise rate and the temperature decrease rate.

3. The method according to claim 2, characterized in that The method further comprises: When the number of the adjustment cycles reaches a third preset number, or the total adjustment time reaches a second preset time, the periodic adjustment process of the diode under test is terminated.

4. The method according to claim 2, characterized in that The step of adjusting the reverse voltage applied to the diode under test based on the reverse voltage upper limit, the reverse voltage lower limit, and the voltage increase rate within each adjustment cycle includes: At the beginning of the adjustment period, applying a reverse voltage of the reverse voltage upper limit value to the diode under test; Based on the voltage increase rate, the reverse voltage applied to the diode under test is increased until the reverse voltage applied to the diode under test increases to the reverse voltage upper limit value.

5. The method according to claim 2, characterized in that The step of adjusting the ambient temperature of the environment in which the diode under test is located based on the temperature upper limit value, the temperature lower limit value, the temperature increase rate, and the temperature decrease rate within each adjustment cycle includes: At the beginning of the adjustment period, adjusting the ambient temperature of the environment in which the diode under test is located to the lower temperature limit; Based on the temperature increase rate, increasing the ambient temperature of the environment in which the diode under test is located until the ambient temperature of the environment in which the diode under test is located increases to the temperature upper limit; When the ambient temperature of the environment in which the diode under test is located rises to the upper temperature limit, the ambient temperature of the environment in which the diode under test is located is reduced based on the temperature drop rate until the ambient temperature of the environment in which the diode under test is located drops to the lower temperature limit.

6. The method according to claim 1, characterized in that The second reverse voltage data is a constant second reverse voltage, and a ratio between the second reverse voltage and an avalanche breakdown threshold of the vehicle diode is a preset ratio.

7. A diode performance testing device, characterized in that: The device comprises: a regulation module, configured to periodically adjust an ambient temperature and an applied reverse voltage of an environment in which a diode under test is located based on first operating condition data of a vehicle diode in a high-voltage electrical system of a new energy vehicle; wherein the first operating condition data includes first reverse voltage data of the vehicle diode and first temperature data of the environment in which the diode is located when the high-voltage electrical system is in a fast charging cycle; a first control module, configured to apply a constant first reverse voltage to the diode under test and control a chip junction temperature of the diode under test based on second operating condition data of the vehicle diode within a first preset time period if the leakage current of the diode under test is less than a preset current after the periodic adjustment ends, wherein the second operating condition data includes the chip junction temperature of the vehicle diode and second reverse voltage data when the high-voltage electrical system is in a full-load operating condition; a second control module, configured to control the ambient temperature of an environment in which the diode under test is located, and apply a first preset number of reverse voltage pulses to the diode under test based on third operating condition data of the vehicle diode, if the steady-state leakage current density of the diode under test is not greater than a preset current density and the pulse response delay is not greater than a preset delay within the first preset time period; wherein the third operating condition data includes third reverse voltage data of the vehicle diode and second temperature data of the environment in which the diode is located when the high-voltage electrical system is in a cold start condition; A determination module is used to determine that the diode under test is an automotive-grade diode if the number of times the diode under test is broken down by the reverse voltage pulse is less than a second preset number, and the rate of change of the insulation resistance of the diode under test is not greater than a preset rate of change each time the reverse voltage pulse is applied to the diode under test.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 6 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

10. A computer program product comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 6 are implemented.

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