Ga2O3 heterojunction beta irradiation battery with multi-groove radioactive source

Abstract

The invention discloses a Ga2O3 heterojunction beta irradiation battery with a multi-groove radioactive source, relates to the technical field of microelectronics, and solves the problems of low energy utilization rate and low energy conversion efficiency of a Ga2O3 nuclear battery radioactive source in the prior art. The battery comprises a filling type multi-groove radioactive source; the Ga2O3 heterojunction diode unit sequentially comprises a P-type ohmic contact electrode, a P-type NiO ion implantation region, an N-type Ga2O3 low-doped epitaxial layer, an N-type Ga2O3 high-doped substrate and an N-type ohmic contact electrode from top to bottom; a multi-T-type radioactive isotope source layer in the filling type multi-groove radioactive source is arranged above the P-type NiO ion implantation region and forms radiation energy coupling with the Ga2O3 heterojunction diode unit; the groove type structure is filled with the radioactive source, the energy deposition of the radioactive source entering the semiconductor conversion device is greatly increased, and the energy conversion efficiency of the Ga2O3 beta irradiation battery is improved.

Description

Technical Field

[0001] The present invention relates to the field of microelectronics technology, and in particular to a Ga2O3 (Gallium Oxide) heterojunction with a multi-groove radioactive source. β Irradiated batteries. Background Art

[0002] Micro nuclear batteries, also known as radioisotope batteries, have many advantages such as small size, light weight, long service life, easy integration, and no influence from the external environment. They can be used to solve the long-term power supply problems of deep space exploration, artificial pacemakers, portable mobile electronic products, implantable microsystems, etc. They are considered to be one of the ideal long-term energy sources for micro-power applications such as micro-electromechanical systems (MEMS) and sensors. β Irradiated batteries are a type of battery that utilizes 3 H. 63 Nihe 147 Beta (emitted by radioactive isotopes such as Pm) β -Particle) radiation voltaic effect of the semiconductor isotope battery output electrical energy. In 1953, Rappaport discovered that the use of isotope decay produced β The radiation can generate electron-hole pairs in the silicon PN junction and generate a carrier collection process similar to the photovoltaic effect, which will eventually β The energy of the radiation is converted into electrical energy for output. This phenomenon is called the radiovoltaic effect. β -Voltaic Effect). In 1957, Elgin-Kidde first β - Voltaic Effect is used in power supply, and the first isotope microbattery is successfully manufactured ( β -Voltaic Battery).

[0003] exist β Among the materials for the semiconductor conversion device of the irradiated battery, wide bandgap semiconductor materials are ideal materials due to their excellent energy conversion efficiency and good radiation resistance. Among them, Ga2O3 materials have strong radiation resistance and can achieve long-term reliable work in a nuclear radiation environment. In addition, the production of Ga2O3 materials by melting method can achieve low cost. These strong advantages make Ga2O3 materials suitable for β Since 1960, when HLRidley et al. published an article on the semiconductor properties and potential applications of Ga2O3, research on Ga2O3 materials has become increasingly popular in the fields of electronics and optoelectronics, especially in the fields of high-power electronic devices and radiation detection. However, the application of wide bandgap Ga2O3 materials in βThe research on irradiated batteries has been stagnant. At present, there is only one document "Journal of Vacuum Science and Technology A 40, 010401 (2022) "Betavoltaic cell based on Ni / β -Ga2O3and 63 Ni source》reported Ga2O3 β Irradiated battery. In the article, using 63 Ni is used as the metal electrode of Ga2O3 Schottky structure to reduce the adverse effect of metal electrodes on the energy of the radiation source. Due to the high cost of highly isotopically enriched materials, the efficiency of Ga2O3 semiconductor conversion devices was estimated using electron beams in scanning electron microscopes (SEM). I sc =8.9 nA / cm 2 , V oc =380 mV, FF =53%.

[0004] Schottky structure Ga2O3 mentioned in Part 2 β Although irradiated batteries reduce the adverse effects of metal electrodes on the energy of radioactive sources, their energy conversion efficiency is still low. The reasons why the energy conversion efficiency cannot be significantly improved are as follows: 1. The problem that only one side of the radiation source can be used, which causes serious waste of radiation source energy. Specifically, the previously used Ga2O3 β Irradiated cells are all made by covering the radiation source above the semiconductor conversion device. Only the radiation source emitted from the side that is in contact with the semiconductor conversion device is effective. β The depletion region depth of the irradiated battery is much smaller than the energy deposition depth of the radiation source, which results in fewer radiation-generated electron-hole pairs that can be converted into radiation-generated current, which in turn leads to the depletion of Ga2O3 β The energy conversion efficiency of irradiated cells cannot be significantly improved. 2. The metal electrode will reduce the intensity and energy of the radiation source due to particle scattering. The reduction of the radiation source energy will directly affect the Ga2O3 β The energy conversion efficiency of the irradiated battery. And the smaller the energy of the radiation source, the more obvious this adverse effect is. Although the existing technology is expected to be directly applied 63 Ni is used as the metal electrode of Ga2O3 Schottky structure, but in actual testing, the electron beam in the scanning electron microscope (SEM) is used to simulate the energy of the radiation source. This still does not solve the huge impact of the metal electrode of the Schottky structure on the energy of the radiation source. βThe depletion region of the irradiated cell is smaller. Because the contact potential between the metal and the semiconductor is small, the diffusion of electrons and the degree of band bending are limited, and the expansion of the depletion region is suppressed. The smaller depletion region will result in the inability of the radiation-generated electron-hole pairs in the Ga2O3 semiconductor conversion device to be completely converted into radiation-generated current, resulting in low carrier collection efficiency and ultimately the Ga2O3 β The energy conversion efficiency of irradiated batteries is low. 4. Schottky structure Ga2O3 β Irradiated batteries have serious leakage because the metal-semiconductor interface of the Schottky junction lacks an effective built-in electric field, which makes it easier for carriers to pass through the junction region when reverse biased, resulting in a large leakage current. Summary of the Invention

[0005] The present invention provides a Ga2O3 heterojunction with a multi-groove radiation source. β Irradiated cells solve the existing problems of Schottky structure and single-side radiation source applied to Ga2O3 β The problem of low energy utilization rate and low energy conversion efficiency of the Ga2O3 nuclear battery radioactive source caused by irradiated batteries has been solved. The radioactive source is filled into the groove structure, which greatly increases the energy deposition of the radioactive source entering the semiconductor conversion device and improves the Ga2O3 β Energy conversion efficiency of irradiated cells.

[0006] The present invention provides a Ga2O3 heterojunction with a multi-groove radiation source β An irradiated battery, the battery comprising: A Ga2O3 heterojunction diode unit, the Ga2O3 heterojunction diode unit comprising, from top to bottom, a P-type ohmic contact electrode (5), a P-type NiO ion implantation region (4), an N-type Ga2O3 low-doped epitaxial layer (3), an N-type Ga2O3 high-doped substrate (2), and an N-type ohmic contact electrode (1); wherein a plurality of grooves are arranged at intervals on the N-type Ga2O3 low-doped epitaxial layer (3); the P-type NiO ion implantation region (4) is formed by ion implantation from the surface of the N-type Ga2O3 low-doped epitaxial layer (3); and the P-type ohmic contact electrode (5) is superimposed on the P-type NiO ion implantation region (4); A filled multi-groove radioactive source, comprising: a multi-T-type radioactive isotope source layer (6) superimposed on the Ga2O3 heterojunction diode unit; The multi-T type radioactive isotope source layer (6) forms radiation energy coupling with the Ga2O3 heterojunction diode unit.

[0007] In one possible implementation, the mesa shape of the Ga2O3 heterojunction diode unit is square or circular; When the Ga2O3 heterojunction diode unit is a square mesa, the side length of the square mesa is 0.5-1.0 cm; When the Ga2O3 heterojunction diode unit is a circular mesa, the diameter of the circular mesa is 0.5 cm to 1.0 cm.

[0008] In a possible implementation, the material of the multi-T-type radioisotope source layer (6) includes: 63 Ni, 147 Pm or 3 H's β A type of radioactive source material.

[0009] In a possible implementation, the multi-T-type radioactive isotope source layer (6) fills the groove and entirely covers the upper surface of the P-type NiO ion implantation region (4), or the multi-T-type radioactive isotope source layer (6) fills the groove.

[0010] In a possible implementation, the P-type ohmic contact electrode (5) is arranged in the upper boundary regions on both sides of the upper surface of the P-type NiO ion implantation region (4); or, the P-type ohmic contact electrode (5) completely covers the upper surface of the P-type NiO ion implantation region (4); or, the P-type ohmic contact electrode (5) is distributed along the upper surface of the P-type NiO ion implantation region (4) in a periodic undulating manner, with an undulation height of 50 to 200 nm.

[0011] In a possible implementation, the implantation depth of the P-type NiO ion implantation region (4) is 0.1-0.2 μm, and the doping concentration is 1×10¹ 8 ~1×10¹ 9 cm⁻³.

[0012] In a possible implementation, the N-type Ga2O3 low-doped epitaxial layer (3) includes: a main body layer and a convex portion; the convex portion is a convex portion formed by etching the plurality of grooves; The thickness of the main layer is 7.5 to 15.0 μm; The height of the raised portion is 0.8 to 2 μm; The doping concentration of the N-type Ga2O3 low-doped epitaxial layer (3) is 5×10¹ 5 ~1×10¹ 6 cm⁻³, the doping element is Si.

[0013] In a possible implementation, the doping concentration of the N-type Ga2O3 highly doped substrate (2) is 2×10¹ 9 cm⁻³, and a thickness of 300±10 μm.

[0014] In one possible implementation, the energy conversion efficiency of the battery satisfies: ; in, or c represents the energy conversion efficiency; I sc Indicates short-circuit current; V oc Indicates open circuit voltage; P sur Indicates incident β Total particle power; FF Indicates the fill factor.

[0015] In a possible implementation, the material of the P-type ohmic contact electrode (5) is a Ni / Au multilayer structure, or a metal stack containing at least one of Ti, Ni, and Al, and the thickness of the P-type ohmic contact electrode (5) is 50-200 nm; The N-type ohmic contact electrode (1) is a Ti / Au double-layer metal structure with a thickness of 200±20 nm. One or more technical solutions provided in the present invention have at least the following technical effects or advantages: The present invention adopts a heterojunction PiN structure formed by adding NiO material to form a P-type NiO ion implantation area and an N-type Ga2O3 highly doped substrate, which makes up for the problem of P-Ga2O3 deficiency, thereby increasing the depletion region and reducing the adverse effects of radiation source particle scattering caused by the metal electrode; at the same time, considering that the incident depth of the radiation source in the Ga2O3 heterojunction diode unit is much greater than that of the Ga2O3 β To irradiate the depth of the depletion region of the battery, the present invention designs a filling multi-groove radiation source, placing the radiation source in a groove that contacts the Ga2O3 heterojunction diode unit on multiple sides, thereby increasing the energy deposition of the radiation source in the depletion region, allowing more radiation-generated electron-hole pairs to be converted into radiation-generated current. Compared with the existing technology, the present invention improves the short-circuit current, open-circuit voltage and fill factor, thereby achieving the goal of improving the Ga2O3 β The purpose of irradiation cell energy conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 Ga2O3 heterojunction with multi-groove radiation source provided by the embodiment of the present invention β Schematic cross-section of an irradiated cell; Figure 2(a)~Figure 2(c) The multi-groove radiation source Ga2O3 heterojunction PiN type provided by the embodiment of the present invention β Current-voltage characteristic output curve of the irradiated battery; Figure numerals: 1-N-type ohmic contact electrode; 2-N-type Ga2O3 highly doped substrate; 3-N-type Ga2O3 low-doped epitaxial layer; 4-P-type NiO ion implantation region; 5-P-type ohmic contact electrode; 6-multi-T-type radioactive isotope source layer. DETAILED DESCRIPTION

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0018] The present invention provides a Ga2O3 heterojunction with a multi-groove radiation source β Irradiated cells, see Figure 1 , the battery includes: A Ga2O3 heterojunction diode unit, the Ga2O3 heterojunction diode unit comprising, from top to bottom, a P-type ohmic contact electrode (5), a P-type NiO ion implantation region (4), an N-type Ga2O3 low-doped epitaxial layer (3), an N-type Ga2O3 high-doped substrate (2), and an N-type ohmic contact electrode (1); wherein a plurality of grooves are arranged at intervals on the N-type Ga2O3 low-doped epitaxial layer (3); the P-type NiO ion implantation region (4) is formed by ion implantation from the surface of the N-type Ga2O3 low-doped epitaxial layer (3); and the P-type ohmic contact electrode (5) is superimposed on the P-type NiO ion implantation region (4); Here, the mesa shape of the Ga2O3 heterojunction diode unit is square or circular; see Figure 1 When the Ga2O3 heterojunction diode unit is a square mesa, the side length of the square mesa is 0.5-1.0 cm; when the Ga2O3 heterojunction diode unit is a circular mesa, the diameter of the circular mesa is 0.5-1.0 cm. However, the shapes and sizes are not limited to these two.

[0019] Here, the P-type ohmic contact electrodes (5) are arranged in the upper boundary regions on both sides of the upper surface of the P-type NiO ion implantation region (4), or the P-type ohmic contact electrodes (5) completely cover the upper surface of the P-type NiO ion implantation region (4); or the P-type ohmic contact electrodes (5) are distributed along the upper surface of the P-type NiO ion implantation region (4) in a periodic undulating manner, with an undulating height of 50 to 200 nm.

[0020] Exemplarily, the P-type ohmic contact electrode (5) is located at the upper boundary of the left and right sides of the P-type NiO ion implantation region (4), and can also be changed to be flat on the upper part of the protrusion of the P-type NiO ion implantation region (4), or present an undulating shape along the upper part of the P-type NiO ion implantation region (4). The P-type ohmic contact electrode (5) is a Ni / Au material or a multilayer metal containing Ti, Ni, or Al, but not limited to these metals, and has a thickness of 50 to 200 nm; Here, the N-type Ga2O3 low-doped epitaxial layer (3) includes: a main layer and a convex portion; the convex portion is a convex portion formed by etching a plurality of grooves; The thickness of the main layer is 7.5 to 15.0 μm; The height of the raised part is 0.8 to 2 μm; The doping concentration of the N-type Ga2O3 low-doped epitaxial layer (3) is 5×10¹ 5 ~1×10¹ 6 cm⁻³, the doping element is Si.

[0021] For example, the N-type Ga2O3 low-doped epitaxial layer (3) is convex and perfectly fits with the P-type NiO ion implantation region (4), with a doping concentration of 5×10 15 ~1×10 16 cm -3 , the thickness excluding the raised portion is 7.5~15.0 μm, and the doping ions are silicon ions; Here, the doping concentration of the N-type Ga2O3 highly doped substrate (2) is 2×10¹ 9 cm⁻³, and a thickness of 300±10 μm.

[0022] Here, the N-type ohmic contact electrode (1) is a Ti / Au double-layer metal structure with a thickness of 200±20 nm, and forms an ohmic contact with the N-type Ga2O3 highly doped substrate (2).

[0023] Here, the energy conversion efficiency of the battery satisfies: ; in, or c represents the energy conversion efficiency; I sc Indicates short-circuit current; V oc Indicates open circuit voltage; P sur Indicates incident β Total particle power; FF Indicates the fill factor.

[0024] Here, the material of the P-type ohmic contact electrode (5) is a Ni / Au multilayer structure, or a metal stack containing at least one of Ti, Ni, and Al, and the thickness of the P-type ohmic contact electrode (5) is 50-200 nm; the N-type ohmic contact electrode (1) is a Ti / Au double-layer metal structure, and the thickness is 200±20 nm.

[0025] A filled multi-groove radioactive source, comprising: a multi-T-type radioactive isotope source layer (6) superimposed on a Ga2O3 heterojunction diode unit; Here, a multi-T type radioisotope source layer (6) in a filled multi-groove radioactive source is arranged above a P type NiO ion implantation region (4) and forms radiation energy coupling with a Ga2O3 heterojunction diode unit.

[0026] Here, the materials of the multi-T type radioisotope source layer (6) include: 63 Ni, 147 Pm or 3 H's β One of the radioactive source materials; but not limited to these isotopes.

[0027] Here, the multi-T type radioactive isotope source layer (6) fills the groove and entirely covers the upper surface of the P type NiO ion implantation region (4), or the multi-T type radioactive isotope source layer (6) fills the groove.

[0028] Exemplarily, the arrangement of the multi-T-type radioisotope source layer (6) includes: Completely covering the upper surface of the P-type NiO ion implantation region (4) and extending to fill the interior of the trench; wherein the trench is formed in the multi-T-type radioactive isotope source layer (6); or Only the interior of the trench is filled; the trench cross-section is rectangular, and the trench dimensions are 2 μm long x 1 μm wide. However, the trench structure is not limited to a rectangle, and the trench dimensions are not limited to the above.

[0029] Here, the P-type NiO ion implantation area (4) has an undulating morphology matching the contour of the lower edge of the trench, the implantation depth is 0.1~0.2 μm, and the doping concentration is 1×10¹ 8 ~1×10¹ 9 cm⁻³.

[0030] For example, the P-type NiO ion implantation area (4) is undulating and is formed by implantation close to the lower edge of the trench. The implantation thickness is 0.1-0.2 μm and the doping concentration is 1×10 19 ~1×10 18 cm -3 ; Here, when using multi-grooves 63When Ni radioactive source is used, the battery conversion efficiency is 10.38%.

[0031] Exemplarily, the multi-T type radioisotope source layer (6) is located above the P type NiO ion implantation region (4). 63 Ni, 147 Pm or 3 H's β The radioactive source material is not limited to these isotopes. The multi-T-type radioactive isotope source layer (6) is paved above the P-type NiO ion implantation area (4) and extends into the groove to fill it completely. It can also be a radioactive isotope area filled only in the groove. The groove size is 2 μm long and 1 μm wide, but the groove structure is not limited to a rectangle and the groove size is not limited to the above one.

[0032] In a specific embodiment provided by the present invention, FIG. 2 is Ti 3 H2, 63 Nihe 147 Pm2O3 multi-groove radiation source Ga2O3 heterojunction PiN type β The current-voltage output characteristic curve of the irradiated battery generated by simulation. In Figure 2, 1. Ti / Au ohmic contact. 2. n + Ga2O3 substrate; doping concentration N D =2×10 19 cm -3 , thickness is 300 μm. 3. n - Ga2O3 epitaxial layer; doping concentration N D =5×10 15 cm -3 , thickness is 7.5 μm. 4. P-type region of p-NiO; doping concentration N A =1×10 18 cm -3 , thickness is 100 nm. 5. Ni / Au ohmic contact. 6. β -Particle radioactive source.

[0033] The following information is involved in the figure: 1. The intersection of the curve and the Y axis - short-circuit current ( I sc );2. Intersection of the curve and the X-axis—open circuit voltage ( V oc ); 3. Fill factor corresponding to maximum output power ( FF );4. Through the formula ηc=FF·Isc·Voc / Psur Ga2O3 obtained β Energy conversion efficiency of irradiated cells.

[0034] Figure 2 (a) Multi-groove Ti 3 H2 radiation source Ga2O3 heterojunction PiN type β Irradiated battery short-circuit current I sc =0.205 μA / cm 2 , open circuit voltage V oc =0.972 V, fill factor FF =78.52%, energy conversion efficiency or c =1.043%.

[0035] Figure 2(b) Multi-groove 63 Ni radioactive source Ga2O3 heterojunction PiN type β Irradiated battery short-circuit current I sc =0.271 μA / cm 2 , open circuit voltage V oc =1.062 V, fill factor FF =86.50%, energy conversion efficiency or c =10.38%.

[0036] Figure 2(c) Multi-grooves 147 Pm2O3 radioactive source Ga2O3 heterojunction PiN type β Irradiated battery short-circuit current I sc =2.32 μA / cm 2 , open circuit voltage V oc =1.08 V, fill factor FF =67.20%, energy conversion efficiency or c =2.31%.

[0037] The introduction of P-NiO in the present invention makes up for the problem of the lack of P-type Ga2O3, realizes the use of Ga2O3 heterojunction PiN type diode, and replaces the Schottky structure in Ga2O3 β Irradiated cells. On the one hand, the depth of the depletion region is increased, which greatly improves the carrier conversion efficiency. On the other hand, the P-type ohmic contact electrode is placed in the entire Ga2O3 heterojunction. β The left and right sides of the irradiated battery solve the adverse effects of the metal electrodes in the Schottky structure on the scattering and reduction of the radiation source energy, increase the energy deposition into the Ga2O3 heterojunction diode unit, and improve the Ga2O3 β Energy conversion efficiency of irradiated cells.

[0038] The present invention aims to solve the problem that N-type Ga2O3 cannot achieve 1×10 15 cm -3 In order to solve the problem of relatively small depletion region area caused by ultra-low doping of Ga2O3, P-type NiO was injected along the groove in an undulating manner, which increased the contact area between the P-type region and the N-type region, allowing more radiation-generated electron-hole pairs to be converted into radiation-generated current, indirectly achieving the improvement of Ga2O3 β Energy conversion efficiency of irradiated cells.

[0039] Since the energy deposition depth of the radiation source in the Ga2O3 material is much greater than the depletion region depth of the Ga2O3 heterojunction PiN diode, a multi-groove radiation source filling structure is designed to enable the energy emitted by the radiation source in multiple directions to enter the depletion region of the Ga2O3 heterojunction diode unit, thereby increasing the utilization of the radiation source emission energy and the energy deposition of the Ga2O3 heterojunction diode unit, thereby achieving the goal of improving the Ga2O3 β The purpose of irradiation cell energy conversion efficiency.

[0040] Compared with the prior art, the multi-groove radiation source Ga2O3 heterojunction PiN type β Irradiated cells have the following advantages: 1. For traditional Schottky structure Ga2O3 β In irradiated cells, only the single side where the radioisotope source layer contacts the Ga2O3 heterojunction diode unit can receive the radioactive source particles. However, the multi-groove radioactive source structure adopted in this structure allows the energy of the radioactive source to be incident on the Ga2O3 heterojunction diode unit from multiple planes. 2. Introducing NiO material as Ga2O3 β The P region of the irradiated battery forms a PiN junction diode. Compared with the Schottky structure, the PiN structure not only solves the problem that the electrode affects the quality of the radiation source entering the Ga2O3 device, but also effectively widens the depletion region. 3. The P-type region formed by the NiO material and the N-type region formed by the Ga2O3 material are generated along the trench structure, which greatly increases the area of the PN junction region and further increases the area of the depletion region. 4. The PiN structure has a smaller leakage current than the Schottky structure because the built-in electric field inside the PN junction (generated by the charge distribution in the P-type and N-type regions) can suppress the occurrence of reverse leakage current to a certain extent. The metal-semiconductor interface of the Schottky junction lacks this effective built-in electric field, which makes it easier for carriers to pass through the junction region when reverse biased, thereby causing a larger leakage current.

[0041] The above four points are the advantages of this invention compared to the second part. From a comprehensive analysis, the first point is mainly to increase the energy deposition in the Ga2O3 heterojunction diode unit. The second and third points are to allow more radial carriers entering the Ga2O3 heterojunction diode unit to be converted into radial current by widening and increasing the area of the depletion region. The fourth point is to improve the efficiency of conversion into radial current. β The energy conversion efficiency of the irradiated cell is based on: Maximum output power: , among which points 1, 2, and 3 all increase the short-circuit current I sc and open circuit voltage V oc , point 4 increases the fill factor FF Comparing the short-circuit current, open-circuit voltage and fill factor obtained by simulation in the fourth part with the data of Schottky structure in the second part, it can be found that the multi-groove Ga2O3 heterojunction PiN structure β The energy conversion efficiency of irradiated cells has been greatly improved.

[0042] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0043] Descriptions with reference to the terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" mean that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

[0044] The above is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention should not be considered to be limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

[0045] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other. Each embodiment focuses on the differences from other embodiments.

[0046] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it should be understood by those skilled in the art that the technical solutions described in the aforementioned embodiments may still be modified, or some or all of the technical features thereof may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the present invention.

Claims

1. A Ga2O3 heterojunction with a multi-groove radiation source β Irradiated battery, characterized in that include: A Ga2O3 heterojunction diode unit, the Ga2O3 heterojunction diode unit comprising, from top to bottom, a P-type ohmic contact electrode (5), a P-type NiO ion implantation region (4), an N-type Ga2O3 low-doped epitaxial layer (3), an N-type Ga2O3 high-doped substrate (2), and an N-type ohmic contact electrode (1); wherein a plurality of grooves are arranged at intervals on the N-type Ga2O3 low-doped epitaxial layer (3); the P-type NiO ion implantation region (4) is formed by ion implantation from the surface of the N-type Ga2O3 low-doped epitaxial layer (3); and the P-type ohmic contact electrode (5) is superimposed on the P-type NiO ion implantation region (4); A filled multi-groove radioactive source, comprising: a multi-T-type radioactive isotope source layer (6) superimposed on the Ga2O3 heterojunction diode unit; The multi-T type radioactive isotope source layer (6) forms radiation energy coupling with the Ga2O3 heterojunction diode unit.

2. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 1 β Irradiated battery, characterized in that The mesa shape of the Ga2O3 heterojunction diode unit is square or circular; When the Ga2O3 heterojunction diode unit is a square mesa, the side length of the square mesa is 0.5-1.0 cm; When the Ga2O3 heterojunction diode unit is a circular mesa, the diameter of the circular mesa is 0.5 cm to 1.0 cm.

3. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 1 β Irradiated battery, characterized in that The material of the multi-T type radioisotope source layer (6) includes: 63 Ni, 147 Pm or 3 H's β A type of radioactive source material.

4. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 1 β Irradiated battery, characterized in that The multi-T-type radioactive isotope source layer (6) fills the groove and entirely covers the upper surface of the P-type NiO ion implantation region (4); alternatively, the multi-T-type radioactive isotope source layer (6) fills the groove.

5. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 1 β Irradiated battery, characterized in that The P-type ohmic contact electrodes (5) are arranged in upper boundary regions on both sides of the upper surface of the P-type NiO ion implantation region (4); or, the P-type ohmic contact electrodes (5) completely cover the upper surface of the P-type NiO ion implantation region (4); or, the P-type ohmic contact electrodes (5) are distributed along the upper surface of the P-type NiO ion implantation region (4) in a periodic undulating manner, with the undulating height being consistent with the groove depth.

6. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 4 β Irradiated battery, characterized in that The implantation depth of the P-type NiO ion implantation region (4) is 0.1-0.2 μm, and the doping concentration is 1×10¹ 8 ~1×10¹ 9 cm⁻³.

7. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 1 β Irradiated battery, characterized in that The N-type Ga2O3 low-doped epitaxial layer (3) comprises: a main body layer and a convex portion; the convex portion is a convex portion formed by etching the plurality of grooves; The thickness of the main layer is 7.5 to 15.0 μm; The height of the raised portion is 0.8 to 2 μm; The doping concentration of the N-type Ga2O3 low-doped epitaxial layer (3) is 5×10¹ 5 ~1×10¹ 6 cm⁻³, the doping element is Si.

8. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 1 β Irradiated battery, characterized in that The doping concentration of the N-type Ga2O3 highly doped substrate (2) is 2×10¹ 9 cm⁻³, and a thickness of 300±10 μm.

9. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 1 β Irradiated battery, characterized in that The energy conversion efficiency of the battery satisfies: ； in, η c represents the energy conversion efficiency; I sc Indicates short-circuit current; V oc Indicates open circuit voltage; P sur Indicates incident β Total particle power; FF Indicates the fill factor.

10. The Ga2O3 heterojunction with a multi-groove radiation source according to claim 1 β Irradiated battery, characterized in that The material of the P-type ohmic contact electrode (5) is a Ni / Au multilayer structure, or a metal stack containing at least one of Ti, Ni, and Al, and the thickness of the P-type ohmic contact electrode (5) is 50-200 nm; The N-type ohmic contact electrode (1) is a Ti / Au double-layer metal structure with a thickness of 200±20 nm.

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