Trench-type MIM capacitor and method of manufacturing the same

Abstract

This invention provides a trench-type MIM capacitor and its manufacturing method, belonging to the semiconductor field. The trench-type MIM capacitor includes a semiconductor substrate with multiple trenches within a first dielectric layer on the semiconductor substrate; a bottom electrode disposed along the bottom and sides of the multiple trenches and extending laterally along the upper surface of the first dielectric layer; an oxygen donor layer covering only the bottom electrode on the trench sides; and a top electrode disposed on the surface of the high-dielectric-constant dielectric layer and filling the trenches. The high-dielectric-constant dielectric layer isolates the bottom electrode and the top electrode. This invention reduces leakage current by providing an oxygen donor layer only on the bottom electrode layer on the trench sides, allowing the oxygen donor layer to supply oxygen to the bottom electrode layer and reducing the concentration of oxygen vacancies. The absence of an oxygen donor layer in the horizontal portion ensures that the capacitance dielectric constant k does not decrease.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a trench-type MIM capacitor and its manufacturing method. Background Technology

[0002] Metal-insulator-metal (MIM) capacitors are commonly used in integrated circuits (ICs). Using high-k dielectrics in trench-type MIM capacitors can increase capacitance, but the small band gap and high oxygen vacancy density of high-k dielectrics lead to higher leakage current. Structures that fill the trenches with vertical high-k dielectric layers help increase capacitance density. However, due to the roughness of the trench sidewalls and the enhanced local electric field caused by the dielectric mass, the trench sidewalls become a weakness, posing a high risk of leakage and reliability issues.

[0003] To address the aforementioned technical issues, a barrier layer is typically placed at the bottom to mitigate the weakness of the trench. However, depositing the barrier layer on the bottom metal electrode alters the capacitance of the capacitor, making it difficult to meet the device specifications used in today's integrated circuits.

[0004] It should be noted that the information disclosed in the background section of this invention is intended only to enhance the understanding of the general background of this invention, and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0005] The purpose of this invention is to provide a trench-type MIM capacitor and its manufacturing method to solve the problems of weak sidewalls, high reliability risk, and capacitance variation in existing trench-type MIM capacitors.

[0006] To solve the above technical problems, the present invention provides a trench-type MIM capacitor, comprising:

[0007] A semiconductor substrate having a plurality of trenches within a first dielectric layer on the semiconductor substrate;

[0008] Bottom electrodes are disposed along the bottom and sides of the plurality of trenches and extend laterally along the upper surface of the first dielectric layer;

[0009] The oxygen donor layer covers only the bottom electrode on the side of the trench;

[0010] A high dielectric constant dielectric layer is disposed along the surface of the bottom electrode not covered by the oxygen donor layer, and along the surface of the oxygen donor layer;

[0011] A top electrode is disposed on the surface of the high dielectric constant dielectric layer and fills the trench. The high dielectric constant dielectric layer isolates the bottom electrode and the top electrode.

[0012] Preferably, the trench-type MIM capacitor further includes:

[0013] A second dielectric layer is disposed on the surface of the top electrode;

[0014] A top contact via extends vertically through the second dielectric layer and exposes the top electrode;

[0015] The bottom contact via extends vertically through the second dielectric layer, the top electrode, and the high dielectric constant dielectric layer, and exposes the bottom electrode.

[0016] Preferably, the materials of the bottom electrode and the top electrode include one or any combination of aluminum, tantalum, tantalum nitride, titanium, and titanium nitride.

[0017] Preferably, the material of the high dielectric constant dielectric layer is one or any combination of zirconium oxide, titanium oxide, and hafnium oxide, and the material of the oxygen donor layer is one or any combination of chromium oxide, cerium oxide, tantalum oxide, aluminum oxide, and silicon nitride.

[0018] Based on the same inventive concept, the present invention also provides a method for manufacturing a trench-type MIM capacitor, comprising:

[0019] A semiconductor substrate is provided, on which a plurality of trenches are formed in a first dielectric layer of the semiconductor;

[0020] A bottom electrode layer is formed in the first dielectric layer of the trench, the bottom electrode layer being disposed along the bottom and sides of the plurality of trenches and extending laterally along the upper surface of the first dielectric layer;

[0021] An oxygen donor layer is formed on the side of the trench where the bottom electrode layer is formed;

[0022] After the oxygen donor layer is formed, a high dielectric constant dielectric layer is formed on the surface of the oxygen donor layer and on the surface of the bottom electrode layer;

[0023] The top electrode layer is formed on the surface of the high dielectric constant dielectric layer, and the trench is filled with a second metal.

[0024] Preferably, a stop layer is further provided between the first dielectric layer and the bottom electrode layer, and the provision of a semiconductor substrate, wherein multiple trenches are formed on the first dielectric layer deposited in the semiconductor substrate, including:

[0025] The stop layer and the first dielectric layer are etched to form multiple trenches on the first dielectric layer.

[0026] Preferably, forming an oxygen donor layer on the side of the trench having a bottom electrode layer includes:

[0027] An oxygen donor layer is deposited on the surface of the bottom electrode layer;

[0028] Dry etching is used to remove the oxygen donor layer extending laterally from the bottom of the trench and the surface of the bottom electrode layer, leaving only the oxygen donor layer located on the side of the trench.

[0029] Preferably, the high dielectric constant dielectric layer is made of one of titanium oxide, zirconium oxide, and hafnium oxide, and the oxygen donor layer is made of one or any combination of chromium oxide, cerium oxide, tantalum oxide, aluminum oxide, and silicon nitride.

[0030] Preferably, the method for forming the trench-type MIM capacitor further includes:

[0031] A second dielectric layer is deposited on the surface of the top electrode layer;

[0032] After depositing the second dielectric layer, a top opening and a bottom opening are etched to form a top metal contact via and a bottom metal contact via, respectively. The top metal contact via penetrates the second dielectric layer vertically and exposes the top electrode layer. The bottom metal contact via penetrates the second dielectric layer, the top electrode layer, and the high dielectric constant dielectric layer vertically and exposes the bottom electrode layer.

[0033] Compared with the prior art, the trench type MIM capacitor manufacturing method of the present invention has the following advantages:

[0034] This invention provides an oxygen donor layer only on the bottom electrode layer on the sidewalls of the trench. This oxygen donor layer supplies oxygen to the bottom electrode layer, reducing the concentration of oxygen vacancies and thus reducing leakage current. Furthermore, the oxygen donor layer also reduces the electric field, improving the reliability of the trench-type MIM capacitor. The oxygen donor layer addresses the potential weakness of the sidewalls. By forming a trench-type metal-insulator-metal MIM structure in the trench, the circuit footprint is reduced, and the capacitor density is increased. The absence of an oxygen donor layer in the horizontal portion ensures that the capacitance remains unchanged, maintaining a high capacitance.

[0035] The trench-type MIM capacitor and its manufacturing method provided by this invention belong to the same inventive concept. Therefore, the trench-type MIM capacitor manufactured using this method can solve the defect of weak trench sidewalls while avoiding changes in capacitance value, thus improving the reliability of the trench-type MIM capacitor. Attached Figure Description

[0036] Figure 1 This is a flowchart of a method for manufacturing a trench-type MIM capacitor according to an embodiment of the present invention.

[0037] Figure 2 This is a schematic diagram of a structure in which a trench is formed in the first dielectric layer according to an embodiment of the present invention.

[0038] Figure 3 This is a schematic diagram of a bottom electrode layer formed in a trench according to an embodiment of the present invention.

[0039] Figure 4 This is a schematic diagram of a structure in which an oxygen donor layer is formed on the surface of the bottom electrode layer in one embodiment of the present invention.

[0040] Figure 5 This is a schematic diagram of a structure in which an oxygen donor layer is formed only in the bottom electrode layer at the side of the trench in one embodiment of the present invention.

[0041] Figure 6 This is a schematic diagram of the structure after a high dielectric constant dielectric layer is formed on the surface of the oxygen donor layer and the bottom electrode layer in one embodiment of the present invention.

[0042] Figure 7 This is a schematic diagram of the structure after forming a top electrode layer on the surface of a high dielectric constant dielectric layer and filling the trench in one embodiment of the present invention.

[0043] Figure 8 This is a schematic diagram of a structure in one embodiment of the present invention, in which a second dielectric layer is formed on the surface of the top electrode layer, and a top opening and a bottom opening are etched.

[0044] Figure 9 This is a schematic diagram of the structure after the top and bottom openings are filled with metal, according to one embodiment of the present invention.

[0045] In the figure, 100 - first dielectric layer; 200 - stop layer; 300 - trench; 400 - bottom electrode layer; 500 - oxygen donor layer; 600 - high dielectric constant dielectric layer; 700 - top electrode layer; 800 - second dielectric layer; 810 - top opening; 820 - bottom opening; 830 - third metal. Detailed Implementation

[0046] To make the objectives, advantages, and features of the present invention clearer, the trench-type MIM capacitor and its manufacturing method proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, used only to facilitate and clarify the illustration of the embodiments of the present invention. It should be understood that the drawings do not necessarily show the specific structure of the invention to scale, and the illustrative features used to illustrate certain principles of the invention in the drawings are also drawn in a slightly simplified manner. Specific design features of the invention disclosed herein, including, for example, specific dimensions, orientations, positions, and shapes, will be determined in part by the specific application and environment in which they are used. Furthermore, in the embodiments described below, the same reference numerals are sometimes used across different drawings to denote the same parts or parts having the same function, omitting repeated descriptions. In this specification, similar reference numerals and letters are used to denote similar items; therefore, once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0047] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0048] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0049] The core idea of ​​this invention is to provide a trench-type MIM capacitor and its manufacturing method, which can solve the problems of leakage and low reliability caused by weak sidewalls of the trench, while also avoiding the reduction of capacitance of the trench-type MIM capacitor.

[0050] To achieve the above-mentioned goals, this invention provides a method for manufacturing a trench-type MIM capacitor, as described above. Figures 1 to 9This invention discloses a specific embodiment of a method for manufacturing a trench-type MIM capacitor. The method includes steps S1 to S6.

[0051] Step S1: Provide a semiconductor substrate, on which a plurality of trenches 300 are formed.

[0052] Specifically, refer to Figure 1 and Figure 2 As shown, a stop layer 200 is also disposed on the surface of the first dielectric layer 100. Forms such as... are created within the first dielectric layer 100 and the etch stop layer 200. Figure 2 The diagram shows multiple trenches 300. Since the multiple trenches 300 have the same structure, only one trench 300 is shown in this embodiment. In some embodiments, the first dielectric layer 100 is an insulating layer surrounding a semiconductor substrate (not shown). The first dielectric layer 100 may include a low-k dielectric layer, an ultra-low-k dielectric layer, an extremely low-k dielectric layer, and / or a silicon dioxide layer. In various embodiments, the first dielectric layer 100 may be a solid or porous low-k material. The stop layer 200 may be a material such as silicon nitride or silicon carbide.

[0053] When etching trench 300, a mask layer (not shown) may first be applied to an unselected area on the surface of stop layer 200. The selected area is the region of the etched trench 300. Trench 300 is formed by selectively exposing the first dielectric layer 100 in areas not covered by the mask layer to the etchant. The etchant may include dry etchants, such as etching chemicals containing fluorine (e.g., CF4, CHF3, C4F8, etc.), and may also include wet etchants containing hydrofluoric acid (HF). In some embodiments, multiple trenches 300 may be formed by performing anisotropic etching within the first dielectric layer 100.

[0054] Step S2: A bottom electrode layer 400 is formed in the first dielectric layer 100 of the trench 300. The bottom electrode layer 400 is disposed along the bottom and sides of the plurality of trenches 300 and extends laterally along the upper surface of the first dielectric layer 100.

[0055] Specifically, refer to Figure 1 and Figure 3As shown, a first metal is deposited on the sides and bottom of the trench 300, and on the surface of the stop layer 200 in the lateral direction, to form a bottom electrode layer 400, serving as the bottom electrode. The first metal used in the bottom electrode layer 400 can be one of aluminum, tantalum, tantalum nitride, titanium, titanium nitride, or any combination thereof. The bottom electrode layer 400 can be formed using deposition techniques (e.g., CVD, PE-CVD, PVD, etc.). A planarization process (e.g., chemical mechanical planarization) can then be performed to achieve a flat top surface of the bottom electrode layer 400.

[0056] Step S3: An oxygen donor layer 500 is formed on the side of the trench 300 on which the bottom electrode layer 400 is formed.

[0057] Specifically, refer to Figure 1 , Figure 4 and Figure 5 As shown, forming an oxygen donor layer 500 on the side of the trench 300 having a bottom electrode layer 400 includes:

[0058] First, an oxygen donor layer 500 is deposited on the surface of the bottom electrode layer 400. The oxygen donor layer 500 can be deposited on the surface of the bottom electrode layer 400 by methods such as chemical vapor deposition or atomic layer deposition.

[0059] Next, dry etching is used to remove the laterally extending oxygen donor layer 500 at the bottom of the trench 300 and on the surface of the bottom electrode layer 400, leaving only the oxygen donor layer 500 located on the sides of the trench 300. During dry etching, the oxygen donor layer 500 located on the sides of the trench 300 can be protected by depositing a mask layer on the sides of the trench 300 before dry etching is performed on the removed portion of the oxygen donor layer 500. Dry etching can be performed using chlorine plasma treatment or argon atom bombardment to remove the laterally extending oxygen donor layer 500 on the surface of the bottom electrode layer 400 and the oxygen donor layer 500 at the bottom of the trench 300, leaving only the oxygen donor layer 500 on the sides of the trench 300. To avoid the influence of chlorine plasma, argon atom bombardment is preferred to remove excess oxygen donor layer 500. After removing excess oxygen donor layer 500, the mask layer is removed. By providing an oxygen donor layer 500 only on the bottom electrode layer 400 on the side of the trench 300, the oxygen donor layer 500 can provide oxygen to the bottom electrode layer 400, reducing the concentration of oxygen vacancies and thus reducing leakage current. Furthermore, the oxygen donor layer 500 can also reduce the electric field, improving the reliability performance of the trench-type MIM capacitor. The oxygen donor layer 500 addresses the potential weakness of the sidewalls. By forming a trench-type metal-insulator-metal MIM structure in the trench 300, the circuit footprint is reduced, and the capacitor density is increased. The absence of the oxygen donor layer 500 in the horizontal portion ensures that the capacitance does not decrease.

[0060] To improve the oxygen supply performance of the oxygen donor layer 500, rapid thermal annealing can be used to treat the oxygen donor layer 500 on the side of the trench 300, thereby reducing defects in the oxygen donor layer 500 and relieving stress on the material. The rapid thermal annealing temperature can be selected from 400℃ to 800℃. That is, the temperature for rapid thermal annealing of the oxygen donor layer 500 can be 400℃, 500℃, 800℃, or any temperature within the range of 400℃ to 800℃.

[0061] Since the material of the oxygen donor layer 500 is related to the material of the high dielectric constant dielectric layer 600, the material of the oxygen donor layer 500 will be described below.

[0062] Step S4: After forming the oxygen donor layer 500, a high dielectric constant dielectric layer 600 is deposited on the surface of the oxygen donor layer 500 and the surface of the bottom electrode layer 400.

[0063] Specifically, refer to Figure 1 , Figure 5 and Figure 6 As shown, a high-dielectric-constant dielectric layer 600 is deposited on the surface of the oxygen donor layer 500 and the surface of the bottom electrode layer 400. The material of the oxygen donor layer 500 varies with the high-dielectric-constant dielectric layer 600. The material of the high-dielectric-constant dielectric layer 600 is one of titanium oxide, zirconium oxide, or hafnium oxide, and the material of the oxygen donor layer 500 is one or any combination of chromium oxide, cerium oxide, tantalum oxide, aluminum oxide, and silicon nitride. The high-dielectric-constant dielectric layer 600 can be formed using deposition techniques (e.g., CVD, PE-CVD, PVD, etc.).

[0064] Step S5: Form the top electrode layer 700 on the surface of the high dielectric constant dielectric layer 600, and fill the trench 300 with a second metal.

[0065] Specifically, refer to Figure 1 and Figure 7 As shown, a second metal is deposited on the surface of the high-dielectric-constant dielectric layer 600, and the trench 300 is filled with the second metal to form a top electrode layer 700, thereby enabling the formation of a top electrode. The top electrode and the bottom electrode are separated by the high-dielectric-constant dielectric layer 600. The second metal can be one of aluminum, tantalum, tantalum nitride, titanium, titanium nitride, or any combination thereof. The metals used for the bottom electrode layer 400 and the top electrode layer 700 can be the same or different, and no specific requirements are made here. The top electrode layer 700 can be formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), or electroless plating. A planarization process (e.g., chemical mechanical planarization) can then be performed to achieve a flat top surface of the top electrode layer 700.

[0066] Step S6: Deposit a second dielectric layer 800 on the surface of the top electrode layer 700, and after depositing the second dielectric layer 800, etch to form a top opening 810 and a bottom opening 820. Fill the top opening 810 and the bottom opening 820 with metal to form a top metal contact via and a bottom metal contact via. The top metal contact via perpendicularly penetrates the second dielectric layer 800 and exposes the top electrode layer 700. The bottom metal contact via perpendicularly penetrates the second dielectric layer 800, the top electrode layer 700 and the high dielectric constant dielectric layer 600 and exposes the bottom electrode layer 400.

[0067] Specifically, refer to Figure 1 , Figure 8 and Figure 9 As shown, a second dielectric layer 800 is deposited on the surface of the top electrode layer 700 using methods such as chemical vapor deposition and atomic layer deposition. The second dielectric layer 800 may also include a low-k dielectric layer, an ultra-low-k dielectric layer, an extremely low-k dielectric layer, and / or a silicon dioxide layer. The materials of the first dielectric layer 100 and the second dielectric layer 800 may be the same or different, as long as they can provide insulation. A top opening 810 and a bottom opening 820 are etched to form them, and a third metal 830 is filled into the top opening 810 and the bottom opening 820. The third metal 830 may be copper, tungsten, aluminum, etc. Before filling the third metal 830, a barrier layer may be deposited on the sidewalls and bottom of the top opening 810 and the bottom opening 820 to prevent metal diffusion of the filled third metal 830. The barrier layer may be made of materials such as tantalum nitride or cobalt. By depositing the third metal 830 in the top opening 810, a top metal contact via is formed, enabling interconnection between the top electrode and other metal layers in the capacitor. By depositing a third metal 830 in the bottom opening 820 to form a bottom metal contact via, the interconnection between the bottom electrode and other metal layers in the capacitor can be achieved.

[0068] To achieve the above-described concept, this embodiment also discloses a trench-type MIM capacitor, comprising: a semiconductor substrate having a plurality of trenches 300 within a first dielectric layer 100 on the semiconductor substrate; a bottom electrode disposed along the bottom and sides of the plurality of trenches 300 and extending laterally along the upper surface of the first dielectric layer 100; an oxygen donor layer 500 covering only the bottom electrode on the sides of the trenches 300; a high-dielectric-constant dielectric layer 600 disposed along the upper surface of the bottom electrode not covered by the oxygen donor layer 500 and on the surface of the oxygen donor layer 500; and a top electrode disposed on the surface of the high-dielectric-constant dielectric layer 600 and filling the trenches 300, the high-dielectric-constant dielectric layer 600 separating the bottom electrode and the top electrode.

[0069] The trench-type MIM capacitor also includes:

[0070] A second dielectric layer 800 is disposed on the surface of the top electrode;

[0071] A top contact via is provided, penetrating vertically through the second dielectric layer 800 and exposing the top electrode;

[0072] A bottom contact via extends vertically through the second dielectric layer 800, the top electrode, and the high dielectric constant dielectric layer 600, and exposes the bottom electrode.

[0073] The materials of the bottom electrode and the top electrode include one or any combination of aluminum, tantalum, tantalum nitride, titanium, and titanium nitride.

[0074] The high dielectric constant dielectric layer 600 is made of one or any combination of zirconium oxide, titanium oxide, and hafnium oxide, and the oxygen donor layer 500 is made of one or any combination of chromium oxide, cerium oxide, tantalum oxide, aluminum oxide, and silicon nitride.

[0075] In summary, the above embodiments have provided detailed descriptions of different configurations of trench-type MIM capacitors and their manufacturing methods. Of course, the above descriptions are only descriptions of preferred embodiments of the present invention and are not intended to limit the scope of the present invention in any way. The present invention includes, but is not limited to, the configurations listed in the above embodiments. Those skilled in the art can draw inferences from the above embodiments. Any changes or modifications made by those skilled in the art based on the above disclosure are within the scope of protection of the claims.

Claims

1. A trench-type MIM capacitor, characterized in that, include: A semiconductor substrate having a plurality of trenches within a first dielectric layer on the semiconductor substrate; Bottom electrodes are disposed along the bottom and sides of the plurality of trenches and extend laterally along the upper surface of the first dielectric layer; The oxygen donor layer covers only the bottom electrode on the side of the trench; A high dielectric constant dielectric layer is disposed along the surface of the bottom electrode not covered by the oxygen donor layer, and along the surface of the oxygen donor layer; A top electrode is disposed on the surface of the high dielectric constant dielectric layer and fills the trench. The high dielectric constant dielectric layer isolates the bottom electrode and the top electrode.

2. The trench-type MIM capacitor according to claim 1, characterized in that, The trench-type MIM capacitor also includes: A second dielectric layer is disposed on the surface of the top electrode; A top contact via extends vertically through the second dielectric layer and exposes the top electrode; The bottom contact via extends vertically through the second dielectric layer, the top electrode, and the high dielectric constant dielectric layer, and exposes the bottom electrode.

3. The trench-type MIM capacitor according to claim 1, characterized in that, The materials of the bottom electrode and the top electrode include one or any combination of aluminum, tantalum, tantalum nitride, titanium, and titanium nitride.

4. The trench-type MIM capacitor according to claim 1, characterized in that, The high dielectric constant dielectric layer is made of one or any combination of zirconium oxide, titanium oxide, and hafnium oxide, and the oxygen donor layer is made of one or any combination of chromium oxide, cerium oxide, tantalum oxide, aluminum oxide, and silicon nitride.

5. A method for manufacturing a trench-type MIM capacitor as described in any one of claims 1-4, characterized in that, include: A semiconductor substrate is provided, on which a plurality of trenches are formed in a first dielectric layer of the semiconductor; A bottom electrode layer is formed in the first dielectric layer of the trench, the bottom electrode layer being disposed along the bottom and sides of the plurality of trenches and extending laterally along the upper surface of the first dielectric layer; An oxygen donor layer is formed on the side of the trench where the bottom electrode layer is formed; After the oxygen donor layer is formed, a high dielectric constant dielectric layer is formed on the surface of the oxygen donor layer and the surface of the bottom electrode layer; The top electrode layer is formed on the surface of the high dielectric constant dielectric layer, and the trench is filled with a second metal.

6. The method for manufacturing a trench-type MIM capacitor according to claim 5, characterized in that, A stop layer is further disposed between the first dielectric layer and the bottom electrode layer. A semiconductor substrate is provided, and a plurality of trenches are formed on the first dielectric layer deposited in the semiconductor substrate, including: The stop layer and the first dielectric layer are etched to form multiple trenches on the first dielectric layer.

7. The method for manufacturing a trench-type MIM capacitor according to claim 5, characterized in that, Forming an oxygen donor layer on the side of the trench having a bottom electrode layer includes: An oxygen donor layer is deposited on the surface of the bottom electrode layer; Dry etching is used to remove the oxygen donor layer extending laterally from the bottom of the trench and the surface of the bottom electrode layer, leaving only the oxygen donor layer located on the side of the trench.

8. The method for manufacturing a trench-type MIM capacitor according to claim 7, characterized in that, The oxygen donor layer extending laterally at the bottom of the trench and on the surface of the bottom electrode layer is removed by argon atom bombardment, leaving only the oxygen donor layer located on the side of the trench.

9. The method for manufacturing a trench-type MIM capacitor according to claim 7, characterized in that, The high dielectric constant dielectric layer is made of one of titanium oxide, zirconium oxide, and hafnium oxide, and the oxygen donor layer is made of one or any combination of chromium oxide, cerium oxide, tantalum oxide, aluminum oxide, and silicon nitride.

10. The method for manufacturing a trench-type MIM capacitor according to claim 5, characterized in that, The method for forming a trench-type MIM capacitor also includes: A second dielectric layer is deposited on the surface of the top electrode layer; After depositing the second dielectric layer, a top opening and a bottom opening are etched to form a top metal contact via and a bottom metal contact via, respectively. The top metal contact via penetrates the second dielectric layer vertically and exposes the top electrode layer. The bottom metal contact via penetrates the second dielectric layer, the top electrode layer, and the high dielectric constant dielectric layer vertically and exposes the bottom electrode layer.

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