Radio frequency switch circuit, radio frequency module and electronic equipment

Abstract

The invention provides a radio frequency switch circuit, which is characterized in that a voltage-sharing network is connected to a body region of a switch transistor, the voltage-sharing network comprises a first branch and a second branch, and the first end of the first branch and the first end of the second branch are both connected to the body region of the switch transistor; when the radio frequency switch circuit is in a turn-off state, the first branch circuit and the second branch circuit are conducted, the second end of the first branch circuit is connected to a source-drain connection node or a source electrode of another switch transistor, and the second end of the second branch circuit is connected to a source-drain connection node or a drain electrode of another switch transistor. The first branch leads the leakage current on the body region of the switch transistor to the source-drain connection node or the source electrode of other switch transistors, and the second branch leads the leakage current on the body region of the switch transistor to the source-drain connection node or the drain electrode of other switch transistors. The phenomenon of uneven voltage division of the switch transistor caused by the fact that the voltage of the body region of the switch transistor is raised is improved.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency technology, and in particular to a radio frequency switching circuit, a radio frequency module and an electronic device. Background Art

[0002] With the rapid development of wireless communication technology, RF switching circuits, as a key component of wireless communication systems, not only enable switching between different signal transmission paths within the RF front-end circuit but also enable antenna impedance tuning, thereby improving antenna efficiency. RF switching circuits typically utilize stacked switching transistors connected in series. In related technologies, this stacked RF switching circuit is prone to uneven voltage distribution, generating a large number of harmonics that affect the linearity of the RF switching circuit, directly impacting the signal quality of the communication system. Therefore, improving its linearity has become a pressing technical challenge. Summary of the Invention

[0003] The purpose of the present invention is to provide a radio frequency switching circuit, a radio frequency module and an electronic device to improve the problem of poor linear performance of the radio frequency switching circuit.

[0004] A radio frequency switch circuit, comprising a first port, a second port, and K switch units sequentially connected in series between the first port and the second port, each switch unit comprising a switch transistor, a first resistor, and a second resistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K; the first resistor and the second resistor of each switch unit are connected between the source and the drain of the switch transistor, the first end of the first resistor being connected to the source of the switch transistor, and the second end of the first resistor being connected to the second The first end of the resistor is connected to form the source-drain connection node of the switching transistor, and the second end of the second resistor is connected to the drain of the switching transistor; at least one voltage balancing network, the body connection end of one voltage balancing network is connected to the body region of one switching transistor, and different voltage balancing networks are connected to the body regions of different switching transistors; the voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the body connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes n first transistors connected in series between the first end and the second end of all second branches m second transistors, n and m are integers greater than or equal to 1; the body region connection end of the voltage balancing network is connected to the body region of the i-th switching transistor, wherein: when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second switching transistor to the K-1-th switching transistor, and n is greater than or equal to i, the second end of the second branch is connected to the source-drain connection node of any one of the i+1-th switching transistor to the i+m-th switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; when the voltage balancing network is connected to the second switching transistor to the K-1-th switching transistor When at least any one of the connections is connected, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th switching transistor to the inth switching transistor, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th switching transistor to the i+mth switching transistor; when the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th switching transistor to the inth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0005] A radio frequency switch circuit comprises a first port, a second port, and K switch units connected in series between the first port and the second port, each switch unit comprising a switching transistor, the source of the first switching transistor being connected to the first port, the drain of the Kth switching transistor being connected to the second port, and the drain of the xth switching transistor being connected to the source of the x+1th switching transistor, wherein K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K; at least one voltage balancing network, the body connection end of one voltage balancing network being connected to the body region of one switching transistor, and different voltage balancing networks being connected to the body regions of different switching transistors; the voltage balancing network comprising a first branch and a second branch, the first end of the first branch and the first end of the second branch being connected to the body connection end of the voltage balancing network, the first branch comprising n first transistors connected in series between the first end and the second end of the first branch, the second branch comprising m second transistors connected in series between the first end and the second end of all second branches, wherein n and m are both integers greater than or equal to 1; the body connection end of the voltage balancing network being connected to the body region of the i-th switching unit, wherein: When connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second switching transistor to the K-1th switching transistor, and n is greater than or equal to i, the second end of the second branch is connected to the drain of any one of the i+2th switching transistor to the i+m-1th switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; when the voltage balancing network is connected to at least any one of the second switching transistor to the K-1th switching transistor, and n is greater than 1 and less than i, the The second end of one branch is connected to the source of any one of the i-2th to i-n+1th switching transistors, and the second end of the second branch is connected to the drain of any one of the i+2th to i+m-1th switching transistors; when the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source of any one of the i-2th to i-n+1th switching transistors, and the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

[0006] A radio frequency switch circuit, comprising: a first port, a second port, and K switch units sequentially connected in series between the first port and the second port, each switch unit comprising a switch transistor, a first resistor, a second resistor, and a self-bias transistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K; the first resistor and the second resistor of each switch unit being connected between the source and the drain of the switch transistor, the first end of the first resistor being connected to the source of the switch transistor, and the second end of the first resistor being connected to the second end of the The first end of the resistor is connected to form the source-drain connection node of the switching transistor, and the second end of the second resistor is connected to the drain of the switching transistor; the self-bias transistor of each switching unit is connected between the gate and the body region of the switching transistor; at least one voltage balancing network, the gate connection end of one voltage balancing network is connected to the gate of one switching transistor, and different voltage balancing networks are connected to the gates of different switching transistors; the voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes n first transistors connected in series between the first end and the second end of the first branch. m second transistors connected in series between the first and second ends of all second branches, where n and m are integers greater than or equal to 1; the gate connection end of the voltage balancing network is connected to the gate of the i-th switching unit, wherein: when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second switching transistor to the K-1-th switching transistor, and n is greater than or equal to i, the second end of the second branch is connected to the source-drain connection node of any one of the i+1-th switching transistor to the i+m-th switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; when the voltage balancing network is connected to the second switching transistor When the voltage balancing network is connected to at least any one of the K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th switching transistor to the inth switching transistor, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th switching transistor to the i+mth switching transistor; when the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th switching transistor to the inth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0007] A radio frequency switch circuit, comprising: a first port, a second port, and K switch units sequentially connected in series between the first port and the second port, each switch unit comprising a switch transistor and a self-bias transistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K; the self-bias transistor of each switch unit being connected between the gate and body region of the switch transistor; at least one voltage balancing network, one of the The gate connection end of the voltage balancing network is connected to the gate of one of the switching transistors, and different voltage balancing networks are connected to the gates of different switching transistors; the voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of all the second branches, where n and m are both greater than or equal to 1; the gate connection end of the voltage balancing network is connected to the first branch. i switching unit, wherein: when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second switching transistor to the K-1th switching transistor, and n is greater than or equal to i, the second end of the second branch is connected to the drain of any one of the i+2th switching transistor to the i+m-1th switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; when the voltage balancing network is connected to at least any one of the second switching transistor to the K-1th switching transistor, and n is greater than 1 and is less than i, the second end of the first branch is connected to the source of any one of the i-2th switching transistor to the i-n+1th switching transistor, and the second end of the second branch is connected to the drain of any one of the i+2th switching transistor to the i+m-1th switching transistor; when the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source of any one of the i-2th switching transistor to the i-n+1th switching transistor, and the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

[0008] In this embodiment, a voltage balancing network is connected to the body region or gate of the switching transistor in the RF switching circuit, and the voltage balancing network includes a first branch and a second branch. The first end of the first branch and the first end of the second branch are both connected to the body region or gate of the switching transistor, and the second end of the first branch is connected to the source-drain connection node or source of other switching transistors, and the second end of the second branch is connected to the source-drain connection node or drain of other switching transistors. Therefore, when the RF switching circuit is in the off state, the first branch and the second branch of the voltage balancing network are turned on, and the first branch of the voltage balancing network will divert the leakage current on the body region of the switching transistor to the source-drain connection node or source of other switching transistors, and the second branch will also divert the leakage current on the body region of the switching transistor to the source-drain connection node or drain of other switching transistors, so as to reduce the amplitude of the body region voltage being raised due to the leakage current on the body region of the switching transistor, improve the uneven voltage division phenomenon of the switching transistor caused by the increase in the body region voltage of the switching transistor, and thereby improve the linear performance of the RF switching circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0010] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0011] Figure 1 This is a structural schematic diagram of a radio frequency switching circuit of the present invention;

[0012] Figure 2 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0013] Figure 3 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0014] Figure 4 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0015] Figure 5 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0016] Figure 6 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0017] Figure 7This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0018] Figure 8 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0019] Figure 9 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0020] Figure 10 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0021] Figure 11 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0022] Figure 12 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0023] Figure 13 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0024] Figure 14 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0025] Figure 15 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0026] Figure 16 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0027] Figure 17 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0028] Figure 18 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0029] Figure 19 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0030] Figure 20 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0031] Figure 21 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0032] Figure 22 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0033] Figure 23 This is another structural schematic diagram of a radio frequency switching circuit of the present invention;

[0034] Figure 24 A simulation schematic diagram of a radio frequency switch circuit of the present invention;

[0035] Figure 25 This is another simulation schematic diagram of a radio frequency switch circuit of the present invention;

[0036] Figure 26 This is another simulation schematic diagram of a radio frequency switch circuit of the present invention;

[0037] Figure 27 This is another simulation schematic diagram of a radio frequency switch circuit of the present invention;

[0038] Figure 28 This is another simulation schematic diagram of a radio frequency switch circuit of the present invention;

[0039] Figure 29 This is another simulation schematic diagram of a radio frequency switch circuit of the present invention;

[0040] Figure 30 This is another simulation schematic diagram of a radio frequency switch circuit of the present invention. DETAILED DESCRIPTION

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0042] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0043] In addition, the descriptions of "first", "second", etc. in the present invention are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0044] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0045] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0046] In addition, the descriptions of "first", "second", etc. in the present invention are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0047] The RF switching circuit provided in the embodiment of the present application can be applied to mobile phones, tablet computers, wearable devices, vehicle-mounted devices, laptop computers, and other terminal devices, and can specifically be applied to the RF modules of these terminal devices. This embodiment does not impose any restrictions on the specific type of terminal device.

[0048] like Figures 1 to 3 As shown, this embodiment provides a radio frequency switch circuit, comprising: a first port A, a second port B, and K switch units sequentially connected in series between the first port A and the second port B, each switch unit comprising a switch transistor, a first resistor R1, and a second resistor R2. Figure 1For example, the K switching units include K switching transistors connected sequentially from left to right, for example: the 1st switching transistor M1, the x-3th switching transistor Mx-3, the x-2th switching transistor Mx-2, the x-1th switching transistor Mx-1, the xth switching transistor Mx, the x+1th switching transistor Mx+1, the x+2th switching transistor Mx+2, the x+3th switching transistor Mx+3, and the Kth switching transistor MK, which are connected sequentially from left to right. The source of the 1st switching transistor M1 is connected to the first port A, the drain of the Kth switching transistor MK is connected to the second port B, and the drain of the xth switching transistor Mx is connected to the source of the x+1th switching transistor Mx+1, where K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K.

[0049] In at least one embodiment, the first port A is configured to be connected to a node on the signal transmission path, and the second port B is configured to be grounded. When the first port A is configured to be connected to a node on the signal transmission path, and the second port B is configured to be grounded, a radio frequency signal is input from the first port A and transmitted to the second port B through the radio frequency switch circuit. Alternatively, the first port A is configured to be connected to the first node on the signal transmission path, and the second port B is configured to be connected to the second node on the signal transmission path, that is, the radio frequency switch circuit is connected in series on the signal transmission path. When the first port A is configured to be connected to the first node on the signal transmission path, and the second port B is configured to be connected to the second node on the signal transmission path, a radio frequency signal can be input from the first port A and transmitted to the second port B through the radio frequency switch circuit, and a radio frequency signal can also be input from the second port B and transmitted to the first port A through the radio frequency switch circuit.

[0050] Each switching unit includes a field effect transistor (FET) including an active region with a source, a drain, and a gate formed on the active region. For example, the FET may be a metal oxide semiconductor FET (MOSFET). The FET may be implemented as a silicon on insulator (SOI) device.

[0051] In at least one embodiment, the switch transistors are field effect transistors (FETs), each having a source, a drain, a gate, and a body region. The source of the first switch transistor M1 is connected to the first port A, the drain of the first switch transistor is connected to the source of the second switch transistor, the drain of the second switch transistor is connected to the source of the third switch transistor, and so on. The drain of the Kth switch transistor is connected to the second port B.

[0052] In at least one embodiment, the gate of each switching transistor is connected to a gate bias terminal VG (not shown). The gate bias terminal VG is configured to output a received bias voltage to each switching transistor. The gate of each switching transistor can be directly connected to the gate bias terminal VG or connected to the gate bias terminal VG via a gate resistor RG. Connecting the gate of each switching transistor to the gate bias terminal VG via the gate resistor RG allows the bias voltage output by the gate bias terminal VG to be more evenly applied to each switching transistor.

[0053] The first resistor R1 and the second resistor R2 of each switching unit are connected between the source and drain of the same switching transistor. The first end of the first resistor R1 is connected to the source of the switching transistor, the second end of the first resistor R2 is connected to the first end of the second resistor to form a source-drain connection node of the switching transistor, and the second end of the second resistor is connected to the drain of the switching transistor. The first resistor R1 and the second resistor R2 can provide a DC off potential for the off-state switching transistor to prevent charge accumulation on the source-drain node of the switching transistor, which could cause premature breakdown of the switching transistor.

[0054] In at least one embodiment, the body region connection terminal of a voltage balancing network is connected to the body region of one of the switching transistors, and different voltage balancing networks are connected to the body regions of different switching transistors. Figure 1 As shown, the body region connection terminal (point T) of the voltage balancing network 100X is connected to the body region of the xth switching transistor Mx.

[0055] like Figure 2 As shown, the voltage balancing network includes a first branch 10 and a second branch 20, wherein the first end of the first branch 10 and the first end of the second branch 20 are connected and connected to the body connection end (point T) of the voltage balancing network. The first branch 10 includes n first transistors N11 sequentially connected in series between the first end and the second end of the first branch, and the second branch 20 includes m second transistors N21 sequentially connected in series between the first end and the second end of the second branch, where n and m are both integers greater than or equal to 1. The number n of the first transistors N11 and the number m of the second transistors N21 can be the same or different. For example, the number of the first transistors N11 and the number of the second transistors N21 are both 4, or the number of the first transistors N11 is 3 and the number of the second transistors N21 is 4.

[0056] It should be noted that the “connection” in this application can be understood as direct connection or indirect connection.

[0057] In a specific embodiment, the RF switching circuit includes at least one voltage balancing network, which can be understood as follows: the RF switching circuit includes a case where it includes one voltage balancing network, and also includes a case where it includes multiple voltage balancing networks. Among them, a voltage balancing network can be connected to any switching transistor. When different voltage balancing networks are connected to different switching transistors, the positions at which the second end of the first branch and the second end of the second branch are connected may be different, and the positions at which the second end of the first branch and the second end of the second branch are connected are not only related to the positions of the connected switching transistors, but also related to the number n of first transistors included in the first branch and the number m of second transistors included in the second branch. When different voltage balancing networks are connected to different switching transistors, the relationship between the positions at which the second ends of the first branches and the second ends of the second branches are connected, and the positions of the connected switching transistors, the number n of the first transistors, and the number m of the second transistors is as follows: when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the source-drain connection node of any one of the i+1 to i+m switching transistors, the second end of the first branch is connected to the second end of the second branch, or the second end of the first branch is left floating; when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the source-drain connection node of any one of the i+1 to i+m switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; When the first branch is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors; when the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0058] In at least one embodiment, when the RF switching circuit includes a voltage balancing network, the voltage balancing network can be connected to the first switching transistor, in which case the second end of the second branch of the voltage balancing network is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors, and the second end of the first branch is connected to the second end of the second branch, or the second end of the first branch is left floating. Alternatively, the voltage balancing network can also be connected to any one of the second to K-1th switching transistors; in this case, if the number n of the first transistors is greater than or equal to i (where i is the sequence number of the position of the connected switching transistor in the RF switching circuit), then the second end of the second branch of the voltage balancing network is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors, and the second end of the first branch is connected to the second end of the second branch, or the second end of the first branch is left floating. If the number n of first transistors is less than i (where i is the sequence number of the connected switching transistors in the RF switching circuit), the second end of the first branch of the voltage balancing network is connected to the source-drain connection node of any one of the i-1th switching transistors to the inth switching transistor, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th switching transistors to the i+mth switching transistors. Alternatively, the voltage balancing network may also be connected to the Kth switching transistor, in which case the second end of the first branch of the voltage balancing network is connected to the source-drain connection node of any one of the i-1th switching transistors to the inth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0059] In at least one embodiment, when the RF switching circuit includes multiple equalizing networks, and the number N of voltage-equalizing networks is less than the number K of switching transistors, the multiple voltage-equalizing networks can be connected to any N switching transistors from the 1st switching transistor to the Kth switching transistor. When the multiple voltage-equalizing networks are connected to different switching transistors, the relationship between the position where the second end of the first branch and the second end of the second branch are connected, and the position of the connected switching transistor, the number n of the first transistors, and the number m of the second transistors is as follows: when the voltage-equalizing network is connected to the 1st switching transistor, or when the voltage-equalizing network is connected to at least any one of the 2nd switching transistor to the K-1th switching transistor, and n is greater than or equal to i, the second end of the second branch is connected to the source-drain connection node of any one of the i+1th switching transistor to the i+mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; in the voltage-equalizing network When the first branch is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors; when the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0060] In at least one embodiment, when the RF switching circuit includes multiple voltage-balancing networks and the number N of voltage-balancing networks is the same as the number K of switching transistors, a voltage-balancing network is connected to each of the K switching transistors. In this case, for the voltage-balancing network connected to the first switching transistor, the second end of the second branch of the voltage-balancing network is connected to the source-drain connection node of any one of the (i+1)th switching transistor to the (i+m)th switching transistor, and the second end of the first branch is connected to the second end of the second branch, or the second end of the first branch is left floating. For the voltage-balancing network connected to the Kth switching transistor, the second end of the first branch of the voltage-balancing network is connected to the source-drain connection node of any one of the (i-1)th switching transistor to the (in)th switching transistor, and the second end of the first branch is connected to the second end of the second branch, or the second end of the first branch is left floating. For the voltage balancing network connected to the 2nd to K-1th switching transistors, if the number of first transistors n is greater than or equal to i (where i is the serial number of the position of the connected switching transistor in the RF switching circuit), then the second end of the second branch of the voltage balancing network is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors, and the second end of the first branch is connected to the second end of the second branch, or the second end of the first branch is left floating. If the number of first transistors n is less than i (where i is the serial number of the position of the connected switching transistor in the RF switching circuit), then the second end of the first branch of the voltage balancing network is connected to the source-drain connection node of any one of the i-1th to iinth switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors.

[0061] It should be noted that, in this embodiment, when the RF switching circuit includes multiple uniform networks and the number N of voltage-balancing networks is less than the number K of switching transistors, the N uniform networks can be connected to the N switching transistors connected in sequence with any one of the switching transistors as the starting point; or they can be connected to any N switching transistors in the K switching transistors in an intermittent manner. For example: when the RF switching circuit includes three uniform networks, namely the first uniform network, the second uniform network, and the third voltage-balancing network, the first voltage-balancing network can be connected to the first switching transistor, the second voltage-balancing network can be connected to the third switching transistor, and the third voltage-balancing network can be connected to the sixth switching transistor. Alternatively, starting from the first switching transistor, the first uniform network, the second uniform network, and the third voltage-balancing network can be connected to the first switching transistor, the second switching transistor, and the third switching transistor, respectively. This embodiment does not limit which switching transistor the voltage-balancing network is specifically connected to.

[0062] As an example, when the voltage balancing network is connected to the first switching transistor and the number m of second transistors N21 is 4, the second end of the second branch can be connected to the source-drain connection node of the second switching transistor, or can be connected to the source-drain connection node of the third switching transistor, or can be connected to the source-drain connection node of the fourth switching transistor, or can be connected to the source-drain connection node of the fifth switching transistor. The second end of the first branch can be left floating or connected to the second end of the second branch.

[0063] As a preferred example, when the voltage balancing network is connected to the first switching transistor and the number m of second transistors N21 is 4, the second end of the second branch is connected to the source-drain connection node of the third switching transistor, that is, connected to the source-drain connection node of the third switching transistor, and the second end of the first branch is connected to the second end of the second branch.

[0064] It should be noted that, in this embodiment, when the voltage balancing network is connected to the first switch transistor, there is no limitation on whether the second to Kth switch units are connected to the voltage balancing network.

[0065] In at least one embodiment, when the voltage balancing network is connected to at least any one of the 2nd to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors.

[0066] As an example, when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the i-1 to i-4 switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1 to i+4 switching transistors. For example, when the number n of first transistors N11 is 4, the number m of second transistors N21 is 4, and the voltage balancing network is connected to the fifth switching transistor, the second end of the first branch may be connected to the source-drain connection node of the fourth switching transistor, or to the source-drain connection node of the third switching transistor, or to the source-drain connection node of the second switching transistor, or to the source-drain connection node of the first switching transistor. The second end of the second branch can be connected to the source-drain connection node of the 6th switching transistor, or to the source-drain connection node of the 7th switching transistor, or to the source-drain connection node of the 7th switching transistor, or to the source-drain connection node of the 8th switching transistor, or to the source-drain connection node of the 9th switching transistor.

[0067] It should be noted that in this embodiment, the voltage balancing network is connected to at least one of the second to K-1th switching transistors, and the voltage balancing network can be connected to at least one of the second to K-1th switching units. For example, the voltage balancing network can be connected only to the second switching unit, or only to the K-1th switching unit, or to some of the switch units from the second to K-1th switching units, or to each of the switch units from the second to K-1th switching units. At this time, the first switch unit and the Kth switch unit may be connected to the voltage balancing network, or may not be connected to the voltage balancing network.

[0068] In at least one embodiment, when the voltage balancing network is connected to the Kth switching transistor, the body region connection end of the voltage balancing network is connected to the body region of the Kth switching unit, the second end of the first branch is connected to the source-drain connection node of any one of the switching transistors from the K-1th switching transistor to the Knth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0069] As an example, when the voltage balancing network is connected to the Kth switching transistor, taking the number n of first transistors N11 as 4, the second end of the first branch can be connected to the source-drain connection node of the K-1th switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the K-2th switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the K-3th switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the K-4th switching transistor. The second end of the second branch can be left floating, or the second end of the second branch can be connected to the second end of the first branch.

[0070] As a preferred example, when the voltage balancing network is connected to the Kth switching transistor, taking the number n of first transistors N21 as 4, the second end of the first branch is connected to the source-drain connection node of the K-2th switching transistor, and the second end of the first branch is connected to the second end of the second branch.

[0071] It should be noted that, in this embodiment, when the voltage balancing network is connected to the Kth switching transistor, the 1st to K-1th switching units may be connected to the voltage balancing network or may not be connected to the voltage balancing network.

[0072] In at least one embodiment, the number of voltage balancing networks is less than or equal to the number of switching transistors. When the number of voltage balancing networks is equal to the number of switching transistors, a voltage balancing network is connected to the body region of each switching transistor. When the number of voltage balancing networks is less than the number of switching transistors, only one voltage balancing network may be connected to the body region of some switching transistors.

[0073] In at least one embodiment, the first transistor may be a diode, a triode, or a MOS capacitor. Similarly, the second transistor may be a diode, a triode, or a MOS capacitor. The structure of the first transistor and the structure of the second transistor may be the same or different. For example, the first transistor may be a diode and the second transistor may be a diode, or the first transistor may be a diode and the second transistor may be a MOS capacitor.

[0074] In at least one embodiment, the structure of the first transistor is the same as the structure of the second transistor, and the number of the first transistor is the same as the number of the second transistor. For example, the first branch includes four first diodes connected in series, and the second branch includes four second diodes connected in series.

[0075] In at least one embodiment, when the RF switch circuit is in the off state, there is RF voltage leaking from other RF branches. Due to the structural characteristics of the switching transistor itself, a parasitic diode exists between the source and drain of the switching transistor. Therefore, when the RF voltage increases to a certain level, a body leakage current Ib will be generated. The body leakage current will be in the body bias resistor RB (such as Figure 4 A voltage drop is generated on the RF switching circuit (as shown), thereby raising the body voltage VB. The magnitude of the increase in the body voltage VB is related to the number of switching transistors in the RF switching circuit. The more switching transistors K are connected in series, the greater the overall leakage current Ib*K, and the greater the magnitude of the increase in the body voltage VB. This makes the RF switching circuit more likely to generate a large number of harmonics, thereby deteriorating the linear performance of the RF switching circuit. At the same time, the increase in the body voltage VB also exacerbates the uneven voltage distribution of the switching transistors in the RF switching circuit, making the switching transistors more susceptible to breakdown, affecting the reliability and stability of the RF switching circuit.

[0076] In this regard, Figure 1 As shown, in this embodiment, a voltage balancing network is connected to the body region of the switching transistor Mx. The voltage balancing network includes a first branch 10 and a second branch 20. The first end of the first branch 10 and the first end of the second branch 20 are both connected to the body region of the switching transistor (as shown in FIG. Figure 1 The second end of the first branch is connected to the source-drain connection node of the switching transistor Mx-3 (as shown in FIG. Figure 1 C shown in FIG), and connecting the second end of the second branch to the source-drain connection node of the switching transistor Mx+3 (as shown in FIG). Figure 1 D shown in the figure), therefore, when the first branch 10 and the second branch 20 of the voltage balancing network are in the on state, the first branch 20 of the voltage balancing network will divert the leakage current Ib on the body region of the switching transistor Mx to the source-drain connection node of the switching transistor Mx-3 (as shown in the figure). Figure 1 C shown in FIG), the second branch 20 will also divert the leakage current Ib on the body region of the switching transistor Mx to the source-drain connection node of the switching transistor Mx+3 (as shown in FIG). Figure 1 D shown in the figure) to reduce the amplitude of the body region voltage VB being raised due to the leakage current Ib on the body region of the switching transistor Mx, thereby improving the uneven voltage division of the switching transistor in the RF switching circuit, reducing the harmonic signal generated by the uneven voltage division of the switching transistor, and thus improving the linear performance of the RF switching circuit.

[0077] In at least one embodiment, when the RF switch circuit is in the on state, the source voltage VS and the drain voltage VD of the switching transistor are the same, and the body voltage VB = (VS + VD) / 2 + Vb. Since the body bias voltage Vb = 0 when the RF switch circuit is in the on state, when the RF switch circuit is in the on state, the body voltage VB at point T is the same as the source voltage VS and the drain voltage VD, that is, VB = VS = VD. Since the voltage VR1 at the second end of the first branch, point C, is equal to (VS + VD) / 2, that is, the voltage VR1 at the second end of the first branch, point C, is equal to VS = VD, the voltages at the first and second ends of the first branch 10 are the same at this time, and the first branch 10 is in an open circuit state, which has no impact on the normal operation of the RF switch circuit. Similarly, since the voltage VR2 at the second end point D of the second branch is equal to (VS+VD) / 2, that is, the voltage VR2 at the second end point D of the second branch is equal to VS=VD, the voltages at the first end and the second end of the second branch 20 are the same at this time, and the second branch 20 is in an open circuit state, which has no effect on the normal operation of the RF switch circuit.

[0078] In at least one embodiment, when the RF switch circuit is in the off state, the voltage VR1 at point C, the second end of the first branch, is equal to (VS + VD) / 2, and the voltage VR2 at point D, the second end of the second branch, is equal to (VS + VD) / 2. Ideally, when the RF switch circuit is in the off state, the source voltage VS and the drain voltage VD of the switching transistor are both 0V, i.e., the voltage VR1 at point C, the second end of the first branch, is equal to 0V, and the voltage VR2 at point D, the second end of the second branch, is equal to 0V. The voltage at the first end of the first branch and the voltage at the first end of the second branch are equal to the body voltage VB = (VS + VD) / 2 + Vb. Since the source voltage VS and the drain voltage VD are both 0, the body voltage VB = the body bias voltage Vb. Since the body bias voltage Vb is a negative voltage (e.g., Vb = -3V) when the RF switch circuit is in the off state, VB = Vb = -3V. When there is a leakage signal from other branches, a radio frequency voltage will exist on the source and drain of the switching transistor, and the radio frequency voltage will cause a body leakage current Ib due to the parasitic diode between the source and drain of the switching transistor. As the leakage signal leaked from other branches increases, the body leakage current Ib increases and the body voltage VB also increases accordingly. When the body voltage VB increases to a level greater than the on-state voltage Vth1 of the first branch and the on-state voltage Vth2 of the second branch, the first branch and the second branch are turned on. At this time, the first branch will divert the leakage current Ib on the body of the switching transistor to the source-drain connection node of other switching transistors, and the second branch will also divert the leakage current Ib on the body of the switching transistor to the source-drain connection node of other switching transistors, so as to reduce the amplitude of the increase in the body voltage VB caused by the leakage current Ib on the body of the switching transistor Mx, thereby improving the uneven voltage division of the switching transistors in the RF switching circuit, reducing the harmonic signals generated by the uneven voltage division of the switching transistors, and thereby improving the linear performance of the RF switching circuit and improving the reliability and stability of the RF switching circuit.

[0079] like Figures 5 and 6 As shown, this embodiment further provides a radio frequency switch circuit, including a first port A, a second port B, and K switch units connected in series between the first port A and the second port B. Each switch unit includes a switching transistor, the source of the first switching transistor is connected to the first port B, the drain of the Kth switching transistor is connected to the second port B, and the drain of the xth switching transistor is connected to the source of the x+1th switching transistor, where K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K. The implementation methods and functions of the switch units and in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0080] At least one voltage balancing network, wherein a body region connection terminal of one of the voltage balancing networks is connected to the body region of one of the switching transistors, and different voltage balancing networks are connected to the body regions of different switching transistors. It should be noted that the voltage balancing network can be connected to the body region of each switching transistor in the K switching units, or the body regions of some switching transistors in the K switching units.

[0081] The voltage balancing network includes a first branch and a second branch. The first end of the first branch and the first end of the second branch are connected to a body connection terminal of the voltage balancing network. The first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are integers greater than or equal to 1. The implementation and functions of the first and second transistors in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0082] In at least one embodiment, the number n of the first transistors N11 and the number m of the second transistors N21 are the same.

[0083] In at least one embodiment, the body connection terminal of the voltage balancing network is connected to the body of the i-th switch unit, wherein:

[0084] When the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the drain of any one of the i+2 to i+m-1 switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0085] As an example, when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and when n is greater than or equal to i, and when the number m of second transistors N21 is 4, the body connection end of the voltage balancing network is connected to the body of the first switching unit, and the second end of the second branch can be connected to the drain of the third switching transistor, or the second end of the second branch can be connected to the drain of the fourth switching transistor. The second end of the first branch can be left floating, or the second end of the first branch can be connected to the second end of the second branch.

[0086] It should be noted that, in this embodiment, when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than or equal to i, it means that when it is necessary to connect the voltage balancing network to the first switching unit, there is no specific limitation on whether the second to K-th switching units are connected to the voltage balancing network.

[0087] In at least one embodiment, the body region connection end of the voltage balancing network is connected to the body region of the i-th switching unit, and when the voltage balancing network is connected to at least any one of the 2nd switching transistor to the K-1th switching transistor, and n is greater than 1 and less than i, the second end of the first branch is connected to the source of any one of the switching transistors from the i-2th switching transistor to the i-n+1th switching transistor, and the second end of the second branch is connected to the drain of any one of the switching transistors from the i+2th switching transistor to the i+m-1th switching transistor.

[0088] As an example, Figure 7 As shown, when the voltage balancing network is connected to at least one of the second to K-1 switching transistors, and when n is greater than 1 and less than i, the number n of first transistors N11 is 4, and the number m of second transistors N21 is 4, the second end of the first branch is connected to the source of any one of the i-2th to i-n+1th switching transistors, and the second end of the second branch is connected to the drain of any one of the i+2th to i+m-1th switching transistors. For example, when i is 5, the second end of the first branch can be connected to the source of the third switching transistor, or the second end of the first branch can be connected to the source of the second switching transistor. The second end of the second branch can be connected to the drain of the seventh switching transistor, or the second end of the second branch can be connected to the drain of the eighth switching transistor.

[0089] It should be noted that, in this embodiment, when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the voltage balancing network can be connected to at least one of the second to K-1th switching units; or each of the second to K-1th switching units can be connected to the voltage balancing network. For example, the voltage balancing network can be connected only to the second switching unit, or each of the second to K-1th switching transistors can be connected to the voltage balancing network. It should be noted that at this time, whether the first switching unit and the Kth switching unit are connected to the voltage balancing network is not specifically limited.

[0090] In at least one embodiment, the body region connection end of the voltage balancing network is connected to the body region of the i-th switching unit. When the voltage balancing network is connected to the K-th switching transistor, the second end of the first branch is connected to the source of any one of the switching transistors from the i-2-th switching transistor to the i-n+1-th switching transistor, and the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

[0091] As an example, when the voltage balancing network is connected to the Kth switching transistor and the number n of first transistors N11 is 4, the body connection terminal of the voltage balancing network is connected to the body of the Kth switching unit, and the second end of the first branch can be connected to the source of the K-2th switching transistor, or the second end of the first branch can be connected to the source of the K-3th switching transistor. The second end of the second branch can be left floating, or the second end of the second branch can be connected to the second end of the first branch.

[0092] This embodiment addresses the problem that when the RF switch circuit is in the off state, the body region voltage VB is raised due to the leakage current Ib, thereby affecting the linear performance of the RF switch circuit and the uneven voltage distribution of the switching transistor. By connecting a voltage balancing network (such as Figure 5 As shown in FIG1 , the switching transistor Mx is connected to the voltage balancing network, the voltage balancing network includes a first branch 10 and a second branch 20, the first end of the first branch 10 and the first end of the second branch 20 are both connected to the body region of the switching transistor Mx, and the second end of the first branch is connected to the source of the other switching transistor (such as Figure 5 The source of the switching transistor Mx-2 is shown), and the second end of the second branch is connected to the drain of the other switching transistor (as shown Figure 5 Therefore, when the first branch 10 and the second branch 20 of the voltage balancing network are in the on state, the first branch 20 of the voltage balancing network will divert the leakage current Ib on the body region of the switching transistor Mx to the source of the switching transistor Mx-2, and the second branch 20 will also divert the leakage current Ib on the body region of the switching transistor Mx to the drain of the switching transistor Mx+2, so as to reduce the amplitude of the body region voltage VB being raised due to the leakage current Ib on the body region of the switching transistor Mx, thereby improving the uneven voltage division of the switching transistors in the RF switching circuit, reducing the harmonic signals generated by the uneven voltage division of the switching transistors, and thus improving the linear performance of the RF switching circuit.

[0093] In at least one embodiment, when the RF switching circuit is in the on state, the voltage across the first branch 10 and the voltage across the second branch 20 in the voltage balancing network are the same, and the first branch 10 and the second switch branch are in an open circuit state, which has no effect on the normal operation of the RF switching circuit.

[0094] In at least one embodiment, when the RF switch circuit is in the off state, the voltage VR1 at the second end of the first branch is equal to the source voltage VS, and the voltage VR2 at the second end of the second branch is equal to the drain voltage VD. Since the source voltage VS and drain voltage VD of the switching transistor are both 0V when the RF switch circuit is in the off state, that is, the voltage VR1 at the second end of the first branch = 0V, and the voltage VR2 at the second end of the second branch = 0V. The voltage at the first end of the first branch and the voltage at the first end of the second branch are equal to the body voltage VB = (VS + VD) / 2 + Vb. Since the source voltage VS and the drain voltage VD are both 0, the body voltage VB = the body bias voltage Vb. Since the body bias voltage Vb is a negative voltage (e.g., Vb = -3V) when the RF switch circuit is in the off state, that is, VB = Vb = -3V. At this time, the first transistor on the first branch and the second transistor on the second branch are both reverse biased. As the RF voltage leaked from other branches increases, the body leakage current Ib increases, and the body voltage VB also increases accordingly. When the body voltage VB increases to a level greater than the on-state voltage Vth1 of the first branch and the on-state voltage Vth2 of the second branch, the first branch and the second branch are turned on. At this time, the first branch will divert the leakage current Ib on the body of the switching transistor to the source-drain connection node of other switching transistors, and the second branch will also divert the leakage current Ib on the body of the switching transistor to the source-drain connection node of other switching transistors, so as to reduce the amplitude of the body voltage VB being raised due to the leakage current Ib on the body of the switching transistor Mx, thereby improving the uneven voltage division of the switching transistors in the RF switching circuit, reducing the harmonic signals generated by the uneven voltage division of the switching transistors, and thereby improving the linear performance of the RF switching circuit, thereby improving the reliability and stability of the RF switching circuit.

[0095] like Figure 8 and Figure 9 As shown, this embodiment further provides a radio frequency switch circuit comprising: a first port A, a second port B, and K switch units connected in series between the first port A and the second port B, each switch unit comprising a switching transistor, a first resistor, a second resistor, and a self-bias transistor, the source of the first switching transistor being connected to the first port, the drain of the Kth switching transistor being connected to the second port, and the drain of the xth switching transistor being connected to the source of the x+1th switching transistor, where K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K. The implementation and functions of the switch units and in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0096] The first resistor and the second resistor of each switching unit are connected between the source and drain of the switching transistor. The first end of the first resistor is connected to the source of the switching transistor, the second end of the first resistor is connected to the first end of the second resistor to form a source-drain connection node of the switching transistor, and the second end of the second resistor is connected to the drain of the switching transistor. The implementation and function of the first and second resistors in this embodiment are the same as those in the above embodiment and are not further described here.

[0097] The self-bias transistor of each switching unit is connected between the gate and body of the switching transistor. The self-bias transistor may be a diode. The anode of the self-bias transistor is connected to the body of the switching transistor, and the cathode of the self-bias transistor is connected to the gate of the switching transistor. In this embodiment, the self-bias transistor is used to divert leakage current from the body of the switching transistor to the gate of the switching transistor.

[0098] The RF switching circuit includes at least one voltage balancing network, wherein the gate connection terminal of one voltage balancing network is connected to the gate of one of the switching transistors, and different voltage balancing networks are connected to the gates of different switching transistors. In this embodiment, the voltage balancing network can be connected to the gate of each switching transistor in the K switching units, or the gates of some switching transistors in the K switching units can be connected to the voltage balancing network.

[0099] In a specific embodiment, the voltage balancing network includes a first branch and a second branch, wherein a first end of the first branch and a first end of the second branch are connected to a gate connection terminal of the voltage balancing network. The first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are both integers greater than or equal to 1. The implementation and functions of the first and second transistors in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0100] In at least one embodiment, the number n of the first transistors N11 and the number m of the second transistors N21 are the same.

[0101] In at least one embodiment, the gate connection terminal of the voltage balancing network is connected to the gate of the i-th switching unit, wherein:

[0102] When the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the source-drain connection node of any one of the i+1 to i+m switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0103] As an example, when the gate connection terminal of the voltage balancing network is connected to the gate of the first switching transistor and the number m of second transistors N21 is 4, the second end of the second branch can be connected to the source-drain connection node of the second switching transistor, or the second end of the second branch can be connected to the source-drain connection node of the third switching transistor, or the second end of the second branch can be connected to the source-drain connection node of the fourth switching transistor, or the second end of the second branch can be connected to the source-drain connection node of the fifth switching transistor. The second end of the first branch can be left floating, or the second end of the first branch can be connected to the second end of the second branch.

[0104] As a preferred example, when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than or equal to i, and the number m of second transistors N21 is 4, the second end of the second branch is connected to the source-drain connection node of the i+2 switching transistor, that is, connected to the source-drain connection node of the third switching transistor, and the second end of the first branch is connected to the second end of the second branch.

[0105] It should be noted that, in this embodiment, when the voltage balancing network is connected to the first switching transistor, there is no specific limitation on whether the gate of the second switching unit to the gate of the Kth switching unit is connected to the voltage balancing network.

[0106] In at least one embodiment, the gate connection terminal of the voltage balancing network is connected to the gate of the i-th switching unit, wherein:

[0107] When the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors.

[0108] As an example, when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the number n of first transistors N11 is 4, and the number m of second transistors N21 is 4, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th to i-4th switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the i+1th to i+4th switching transistors. For example, when i is 5, the second end of the first branch can be connected to the source-drain connection node of the fourth switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the third switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the second switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the first switching transistor. The second end of the second branch can be connected to the source-drain connection node of the 6th switching transistor, or the second end of the second branch can be connected to the source-drain connection node of the 7th switching transistor, or the second end of the second branch can be connected to the source-drain connection node of the 7th switching transistor, or the second end of the second branch can be connected to the source-drain connection node of the 8th switching transistor, or the second end of the second branch can be connected to the source-drain connection node of the 9th switching transistor.

[0109] It should be noted that, in this embodiment, when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, there is no specific limitation on whether the first switching unit and the Kth switching unit are connected to the voltage balancing network.

[0110] In at least one embodiment, the gate connection end of the voltage balancing network is connected to the gate of the i-th switching unit. When the voltage balancing network is connected to the K-th switching transistor, the second end of the first branch is connected to the source-drain connection node of any one of the switching transistors from the i-1-th switching transistor to the in-th switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0111] As an example, when the voltage balancing network is connected to the Kth switching transistor, and the number n of the first transistors N11 is 4, the second end of the first branch can be connected to the source-drain connection node of the K-1th switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the K-2th switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the K-3th switching transistor, or the second end of the first branch can be connected to the source-drain connection node of the K-4th switching transistor. The second end of the second branch can be left floating, or the second end of the second branch can be connected to the second end of the first branch.

[0112] As a preferred example, when the voltage balancing network is connected to the Kth switching transistor, when the number n of first transistors N21 is 4, the second end of the first branch is connected to the source-drain connection node of the K-2th switching transistor, and the second end of the first branch is connected to the second end of the second branch.

[0113] It should be noted that, in this embodiment, when the voltage balancing network is connected to the Kth switching transistor, there is no specific limitation on whether the 1st to K-1th switching units are connected to the voltage balancing network.

[0114] In this embodiment, the first end of the first branch and the first end of the second branch in the voltage balancing network are connected to the gate of the switching transistor. The connection node of the second end of the first branch in the voltage balancing network is mainly related to the number n of first transistors N11 and the sorting position (the value of i) of the switching transistor connected to the voltage balancing network in the RF switching circuit. Similarly, the connection node of the second end of the second branch in the voltage balancing network is mainly related to the number m of second transistors N21 and the sorting position (the value of i) of the switching transistor connected to the voltage balancing network in the RF switching circuit.

[0115] In at least one embodiment, the number of voltage balancing networks is less than or equal to the number of switching transistors. A voltage balancing network may be connected to the body region of each switching transistor, or only to the body regions of some switching transistors.

[0116] This embodiment addresses the problem that when the RF switch circuit is in the off state, the body voltage VB is raised due to the leakage current Ib, thereby affecting the linear performance of the RF switch circuit and the uneven voltage distribution of the switch transistor. By connecting a voltage balancing network (such as Figure 8 As shown in FIG1 , the switching transistor Mx is connected to the voltage balancing network, the voltage balancing network includes a first branch 10 and a second branch 20, the first end of the first branch 10 and the first end of the second branch 20 are both connected to the gate of the switching transistor Mx, and the second end of the first branch is connected to the source-drain connection node of the other switching transistor (such as Figure 8The source and drain of the switching transistor Mx-1 are connected to the node shown), and the second end of the second branch is connected to the drain of the other switching transistor (as shown Figure 8 The source-drain connection node of the switching transistor Mx+1 is shown), therefore, the self-biased transistor is used to divert the leakage current of the body region of the switching transistor to the gate of the switching transistor. When the first branch 10 and the second branch 20 of the voltage balancing network are in the on state, the first branch 20 of the voltage balancing network will divert the leakage current Ib on the gate of the switching transistor Mx to the source-drain connection node of the switching transistor Mx-1, and the second branch 20 will also divert the leakage current Ib on the gate of the switching transistor Mx to the source-drain connection node of the switching transistor Mx+1, so as to reduce the amplitude of the body region voltage VB being raised due to the leakage current Ib on the body region of the switching transistor Mx, thereby improving the voltage division unevenness of the switching transistor in the RF switching circuit, reducing the harmonic signal generated by the voltage division unevenness of the switching transistor, and thereby improving the linear performance of the RF switching circuit.

[0117] In at least one embodiment, when the RF switching circuit is in the on state, the voltage across the first branch 10 and the voltage across the second branch 20 in the voltage balancing network are the same, and the first branch 10 and the second switch branch are in an open circuit state, which has no effect on the normal operation of the RF switching circuit.

[0118] In at least one embodiment, when the RF switch circuit is in the off state, the voltage VR1 at the second end of the first branch is equal to (VS + VD) / 2, and the voltage VR2 at the second end of the second branch is equal to (VS + VD) / 2. Since the source voltage VS and the drain voltage VD of the switching transistor are both 0V when the RF switch circuit is in the off state, that is, the voltage VR1 at the second end of the first branch is equal to 0V, and the voltage VR2 at the second end of the second branch is equal to 0V. The voltage at the first end of the first branch and the voltage at the first end of the second branch are equal to the gate voltage VG = VG = (VS + VD) / 2 + Vb. Since the source voltage VS and the drain voltage VD are both 0, the gate voltage VG is equal to the body bias voltage Vb. Since the body bias voltage Vb is a negative voltage (for example, Vb = -3V) when the RF switch circuit is in the off state, that is, VG = Vb = -3V. At this time, the first transistor on the first branch and the second transistor on the second branch are both reverse biased. As the RF voltage leaked from other branches increases, the body leakage current Ib increases, and the gate voltage VG also increases accordingly. When the gate voltage VG increases to be greater than the conduction voltage Vth1 of the first branch and the conduction voltage Vth2 of the second branch, the first branch and the second branch are turned on. At this time, the leakage current Ib on the body region of the switching transistor is first led to the gate through the self-bias transistor, and then the leakage current Ib on the gate is led to the source-drain connection node of other switching transistors through the first branch, and then the leakage current Ib on the gate is led to the source-drain connection node of other switching transistors through the second branch, so as to reduce the amplitude of the body voltage VB being raised due to the leakage current Ib on the body region of the switching transistor Mx, thereby improving the uneven voltage division of the switching transistors in the RF switching circuit, reducing the harmonic signals generated by the uneven voltage division of the switching transistors, and thereby improving the linear performance of the RF switching circuit, thereby improving the reliability and stability of the RF switching circuit.

[0119] like Figure 10 and Figure 11 As shown, this embodiment further provides a radio frequency switch circuit, comprising a first port A, a second port B, and K switch units connected in series between the first port A and the second port B. Each switch unit comprises a switching transistor and a self-bias transistor. The source of the first switching transistor is connected to the first port, the drain of the Kth switching transistor is connected to the second port, and the drain of the xth switching transistor is connected to the source of the x+1th switching transistor, where K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K. The implementation methods and functions of the switch units and in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0120] The self-bias transistor of each switching unit is connected between the gate and the body region of the switching transistor. The implementation method and function of the self-bias transistor in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0121] At least one voltage balancing network, the gate connection end of one voltage balancing network is connected to the gate of one of the switching transistors, and different voltage balancing networks are connected to the gates of different switching transistors; it should be noted that the voltage balancing network can be connected to the gate of each switching transistor in the K switching units, or the voltage balancing network can be connected to the gates of some switching transistors in the K switching units.

[0122] The voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are both greater than or equal to 1; the implementation method and function of the first transistors and the second transistors in this embodiment are the same as those in the above embodiment and are not redundantly described here.

[0123] In at least one embodiment, the number n of the first transistors N11 and the number m of the second transistors N21 are the same.

[0124] In at least one embodiment, the gate connection terminal of the voltage balancing network is connected to the gate of the i-th switching unit, wherein:

[0125] When the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the drain of any one of the i+2 to i+m-1 switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0126] As an example, when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and when n is greater than or equal to i, and when the number m of second transistors N21 is 4, the body connection end of the voltage balancing network is connected to the gate of the first switching unit, and the second end of the second branch can be connected to the drain of the third switching transistor, or the second end of the second branch can be connected to the drain of the fourth switching transistor. The second end of the first branch can be left floating, or the second end of the first branch can be connected to the second end of the second branch.

[0127] It should be noted that, in this embodiment, when the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, and n is greater than or equal to i, it means that when it is necessary to connect the voltage balancing network to the first switching unit, there is no specific limitation on whether the second to K-th switching units are connected to the voltage balancing network.

[0128] In at least one embodiment, the gate connection end of the voltage balancing network is connected to the gate of the i-th switching unit, and when the voltage balancing network is connected to at least any one of the 2nd to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source of any one of the i-2th to i-n+1th switching transistors, and the second end of the second branch is connected to the drain of any one of the i+2th to i+m-1th switching transistors.

[0129] As an example, Figure 7 As shown, when the voltage balancing network is connected to at least one of the second to K-1 switching transistors, and when n is greater than 1 and less than i, the number n of first transistors N11 is 4, and the number m of second transistors N21 is 4, the second end of the first branch is connected to the source of any one of the i-2th to i-n+1th switching transistors, and the second end of the second branch is connected to the drain of any one of the i+2th to i+m-1th switching transistors. For example, when i is 5, the second end of the first branch can be connected to the source of the third switching transistor, or the second end of the first branch can be connected to the source of the second switching transistor. The second end of the second branch can be connected to the drain of the seventh switching transistor, or the second end of the second branch can be connected to the drain of the eighth switching transistor.

[0130] It should be noted that in this embodiment, when the voltage balancing network is connected to at least one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the voltage balancing network can be connected to at least one of the second to K-1th switching units. For example, the voltage balancing network can be connected only to the second switching unit, or only to the K-1th switching unit, or each of the second to K-1th switching units can be connected to the voltage balancing network. In this case, whether the first and K-th switching units are connected to the voltage balancing network is not specifically limited.

[0131] In at least one embodiment, the gate connection end of the voltage balancing network is connected to the gate of the i-th switching unit. When the voltage balancing network is connected to the K-th switching transistor, the second end of the first branch is connected to the source of any one of the switching transistors from the i-2-th switching transistor to the i-n+1-th switching transistor, and the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

[0132] As an example, when the voltage balancing network is connected to the Kth switching transistor, and the number n of first transistors N11 is 4, the gate connection terminal of the voltage balancing network is connected to the gate of the Kth switching unit, and the second end of the first branch can be connected to the source of the K-2th switching transistor, or the second end of the first branch can be connected to the source of the K-3th switching transistor. The second end of the second branch can be left floating, or the second end of the second branch can be connected to the second end of the first branch.

[0133] It should be noted that, in this embodiment, when the voltage balancing network is connected to the Kth switching transistor, there is no specific limitation on whether the 1st to K-1th switching units are connected to the voltage balancing network.

[0134] In this embodiment, the first end of the first branch and the first end of the second branch in the voltage balancing network are connected to the gate of the switching transistor. The connection node of the second end of the first branch in the voltage balancing network is mainly related to the number n of first transistors N11 and the sorting position (the value of i) of the switching transistor connected to the voltage balancing network in the RF switching circuit. Similarly, the connection node of the second end of the second branch in the voltage balancing network is mainly related to the number m of second transistors N21 and the sorting position (the value of i) of the switching transistor connected to the voltage balancing network in the RF switching circuit.

[0135] In at least one embodiment, a voltage balancing network may be connected to the gate of each switching transistor, or a voltage balancing network may be connected to the gates of only some switching transistors.

[0136] This embodiment aims to solve the problem that when the RF switch circuit is in the off state, the leakage current Ib causes the body region voltage VB to be raised, thereby affecting the linear performance of the RF switch circuit and causing the voltage distribution of the switch transistor to be uneven. By connecting a voltage balancing network (such as Figure 8 As shown in FIG1 , the switching transistor Mx is connected to the voltage balancing network), the voltage balancing network includes a first branch 10 and a second branch 20, the first end of the first branch 10 and the first end of the second branch 20 are both connected to the gate of the switching transistor Mx, and the second end of the first branch is connected to the source of the other switching transistor (such as Figure 10 The source of the switching transistor Mx-2 is shown), and the second end of the second branch is connected to the drain of the other switching transistor (as shown Figure 10 Therefore, the self-biased transistor is used to divert the leakage current of the body region of the switching transistor to the gate of the switching transistor. When the first branch 10 and the second branch 20 of the voltage balancing network are in the on state, the first branch 20 of the voltage balancing network will divert the leakage current Ib on the gate of the switching transistor Mx to the source of the switching transistor Mx-2, and the second branch 20 will also divert the leakage current Ib on the body region of the switching transistor Mx to the drain of the switching transistor Mx+2, so as to reduce the amplitude of the increase in the body region voltage VB caused by the leakage current Ib on the body region of the switching transistor Mx, thereby improving the uneven voltage division of the switching transistors in the RF switching circuit, reducing the harmonic signals generated by the uneven voltage division of the switching transistors, and thus improving the linear performance of the RF switching circuit.

[0137] In at least one embodiment, when the RF switching circuit is in the on state, the voltage across the first branch 10 and the voltage across the second branch 20 in the voltage balancing network are the same, and the first branch 10 and the second switch branch are in an open circuit state, which has no effect on the normal operation of the RF switching circuit.

[0138] In at least one embodiment, when the RF switch circuit is in the off state, the voltage VR1 at the second end of the first branch is equal to VS, and the voltage VR2 at the second end of the second branch is equal to VD. Since the source voltage VS and the drain voltage VD of the switching transistor are both 0V when the RF switch circuit is in the off state, that is, the voltage VR1 at the second end of the first branch is equal to 0V, and the voltage VR2 at the second end of the second branch is equal to 0V. The voltage at the first end of the first branch and the voltage at the first end of the second branch are equal to the gate voltage VG = (VS + VD) / 2 + Vb. Since the source voltage VS and the drain voltage VD are both 0, the gate voltage VG is equal to the bias voltage Vb. Since the body bias voltage Vb is a negative voltage (for example, Vb = -3V) when the RF switch circuit is in the off state, that is, VG = Vb = -3V. At this time, the first transistor on the first branch and the second transistor on the second branch are both reverse biased. As the RF voltage leaked from other branches increases, the body leakage current Ib increases, the body voltage VB increases, and the gate voltage VG also increases with the body voltage VB. When the gate voltage VG increases to be greater than the turn-on voltage Vth1 of the first branch and the turn-on voltage Vth2 of the second branch, the first branch and the second branch are turned on. At this time, the leakage current Ib on the body of the switching transistor is first led to the gate through the self-bias transistor, and then the leakage current Ib on the gate is led to the source of other switching transistors through the first branch, and then the leakage current Ib on the gate is led to the drain of other switching transistors through the second branch, so as to reduce the amplitude of the body voltage VB being raised due to the leakage current Ib on the body of the switching transistor Mx, thereby improving the uneven voltage division of the switching transistors in the RF switching circuit, reducing the harmonic signals generated by the uneven voltage division of the switching transistors, and thereby improving the linear performance of the RF switching circuit, thereby improving the reliability and stability of the RF switching circuit.

[0139] as follows Figure 24 As shown in FIG, it is a simulation effect diagram of the related art in which the RF switch circuit is not connected to the uniform network. Figure 25 As shown in FIG, it is a simulation effect diagram of the above four embodiments of the present application by connecting at least a part of the uniform network to the RF switch circuit, wherein the horizontal axis represents the power Pin of the input signal, and the vertical axis represents the power of the harmonic signal.

[0140] Through Figure 24 and Figure 25 By comparison, it can be seen that in the related art, when there is no access to a uniform network, as the input power Pin increases, the power of the harmonic signal increases rapidly, while in this application, by accessing at least part of the uniform network in the RF switch circuit, as the input power Pin increases, the power of the harmonic signal Harminics increases more slowly. For example, taking the input power also within the range of [44dBm, 50dBm] as an example, Figure 24In the case of no access to a uniform network, when the input power increases from 44dBm to 50dBm, the power of the harmonic signal Harminics increases from -60dBm to -22dBm, an increase of 38dBmm. Figure 25 After the RF switch circuit is connected to at least a portion of the uniform network, the power of its harmonic signal Harminics increases from -57dBm to nearly -43dBm, with an increase of only 14dBm. Therefore, it can be seen that by connecting at least a portion of the uniform network to the RF switch circuit, the present application can improve the situation where a large number of harmonic signals are generated due to uneven voltage division of the switching transistors in the RF switch circuit, thereby improving the linear performance of the RF switch circuit.

[0141] In at least one embodiment, Figure 12 As shown, the first port A is configured to be connected to the first signal transmission port, and the second port is configured to be grounded; the number of the voltage balancing networks is N, and the N voltage balancing networks are arranged in sequence in the direction from the first port to the second port; wherein, the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, and the body region connection end of the Nth voltage balancing network is connected to the body region of the Nth switching transistor; wherein, N is an integer greater than 1 and less than or equal to K.

[0142] In at least one embodiment, the first signal transmission port is a port for transmitting signals. In actual applications, when the RF switch circuit is in the on state, the desired RF signal is transmitted to the RF switch circuit via the first signal transmission port. When the RF switch circuit is in the off state, leakage signals on other paths leak into the RF switch circuit via the first signal transmission port, thereby generating a body leakage current Ib, deteriorating the linear performance of the RF switch circuit and exacerbating the uneven voltage division phenomenon of the switching transistor.

[0143] In at least one embodiment, the first signal transmission port may be an antenna port, or may be any port on a serial path of a signal transmission link.

[0144] In at least one embodiment, when the RF switch circuit is in the off state, leakage signals on other paths are transmitted from the first port A of the RF switch circuit to the second port B. That is, the closer the body region leakage current on the switching transistor is to the first port A of the RF switch circuit, the greater the current. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be grounded, and the number N of the connected voltage balancing networks is less than or equal to the number K of the switching transistors, the N voltage balancing networks are arranged in sequence in the direction from the first port to the second port, so that when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switch circuit can be improved to the greatest extent, and the harmonic signals generated by the voltage division unevenness of the switching transistors can be reduced, thereby improving the linear performance of the RF switch circuit, and thereby improving the reliability and stability of the RF switch circuit.

[0145] As an example, Figure 12 As shown, the number of the voltage balancing networks is 4. The body connection end of the voltage balancing network 1001 is connected to the body of the first switching transistor, the body connection end of the voltage balancing network 1002 is connected to the body of the second switching transistor, the body connection end of the voltage balancing network 1003 is connected to the body of the third switching transistor, and the body connection end of the voltage balancing network 1004 is connected to the body of the fourth switching transistor. It should be noted that this embodiment specifically defines the connection position of the body connection end of the voltage balancing network (i.e., the connection position of the first end of the first branch and the first end of the second branch in the voltage balancing network). The connection method and connection node of the second end of the first branch and the second end of the second branch in the voltage balancing network refer to the above embodiment and are not redundantly described here.

[0146] In at least one embodiment, Figure 13 As shown, the first port A is configured as a first signal transmission port connection, the second port B is configured as grounded, the at least one voltage balancing network includes a first voltage balancing network, the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the i+1th switching transistor to the i+mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0147] In at least one embodiment, when the RF switch circuit is in the off state, the leakage signal on other paths is transmitted from the first port A of the RF switch circuit to the second port B. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be grounded, and the number N of the connected voltage balancing networks is 1, the body connection end of the first voltage balancing network is connected to the body of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the i+1th switching transistor to the i+mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating, so that when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switch circuit can be improved to the greatest extent, and the harmonic signals generated by the voltage division unevenness of the switching transistors can be reduced, thereby improving the linear performance of the RF switch circuit, and thereby improving the reliability and stability of the RF switch circuit.

[0148] It should be noted that the specific implementation methods and functions of the first branch and the second branch in the first voltage balancing network in this embodiment are the same as the specific implementation methods and functions of the first branch and the second branch of the voltage balancing network in the above embodiment, and no redundant description is given here.

[0149] In one embodiment, Figure 14 As shown, the first port A is configured as a first signal transmission port connection, the second port is configured as grounded, and the at least one voltage balancing network includes a first voltage balancing network, the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the switching transistors from the i+2th switching transistor to the i+m-1th switching transistor, and the second end of the first branch in the first voltage balancing network is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, when a limited number of voltage balancing networks are connected, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved, the harmonic signals generated by the voltage division unevenness of the switching transistors can be reduced, and the linear performance of the RF switching circuit can be improved, thereby improving the reliability and stability of the RF switching circuit.

[0150] In at least one embodiment, when the RF switching circuit is in the off state, the leakage signal on other paths is transmitted from the first port A of the RF switching circuit to the second port B. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be grounded, and the number N of the connected voltage balancing networks is 1, the body connection end of the first voltage balancing network is connected to the body of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the switching transistors from the i+2th switching transistor to the i+m-1th switching transistor, and the second end of the first branch in the first voltage balancing network is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved to the greatest extent, the harmonic signal generated by the voltage division unevenness of the switching transistors can be reduced, and the linear performance of the RF switching circuit can be improved, thereby improving the reliability and stability of the RF switching circuit.

[0151] It should be noted that the specific implementation methods and functions of the first branch and the second branch in the first voltage balancing network in this embodiment are the same as the specific implementation methods and functions of the first branch and the second branch of the voltage balancing network in the above embodiment, and no redundant description is given here.

[0152] In one embodiment, Figure 15 As shown, the first port is configured to be connected to the first signal transmission port, and the second port is configured to be grounded; the number of the voltage balancing networks is N, and the N voltage balancing networks are arranged in sequence in the direction from the first port to the second port; wherein, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, and the gate connection end of the Nth voltage balancing network is connected to the gate of the Nth switching transistor, wherein N is an integer greater than 1 and less than or equal to K.

[0153] In at least one embodiment, the first signal transmission port is a port for transmitting signals. In actual application, when the RF switch circuit is in the on state, the RF signal to be transmitted is transmitted to the RF switch circuit through the first signal transmission port. When the RF switch circuit is in the off state, leakage signals on other paths leak into the RF switch circuit through the first signal transmission port, thereby causing body leakage current Ib, deteriorating the linear performance of the RF switch circuit and exacerbating the uneven voltage division of the switching transistor. The first signal transmission port can be an antenna port or any port on the series path of the signal transmission link.

[0154] In at least one embodiment, when the RF switch circuit is in the off state, leakage signals on other paths are transmitted from the first port A of the RF switch circuit to the second port B. That is, the closer the body region leakage current on the switching transistor is to the first port A of the RF switch circuit, the greater the current. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be grounded, and the number N of the connected voltage balancing networks is less than or equal to the number K of the switching transistors, the N voltage balancing networks are arranged in sequence in the direction from the first port to the second port, so that when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switch circuit can be improved to the greatest extent, and the harmonic signals generated by the voltage division unevenness of the switching transistors can be reduced, thereby improving the linear performance of the RF switch circuit, and thereby improving the reliability and stability of the RF switch circuit.

[0155] As an example, Figure 15 As shown, the number of the voltage balancing networks is 4, the gate connection end of the voltage balancing network 1001 is connected to the body region of the first switching transistor, the gate connection end of the voltage balancing network 1002 is connected to the gate of the second switching transistor, the gate connection end of the voltage balancing network 1003 is connected to the gate of the third switching transistor, and the gate connection end of the voltage balancing network 1004 is connected to the gate region of the fourth switching transistor. It should be noted that this embodiment specifically defines the connection position of the gate connection end of the voltage balancing network (that is, the connection position of the first end of the first branch and the first end of the second branch in the voltage balancing network). The connection method and connection position of the second end of the first branch and the second end of the second branch in the voltage balancing network 1 refer to the above embodiment and are not redundantly described here.

[0156] In one embodiment, the first port is configured as a first signal transmission port connection, the second port is configured as grounded, the at least one voltage balancing network includes a first voltage balancing network, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the i+1th switching transistor to the i+mth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0157] In at least one embodiment, when the RF switching circuit is in the off state, the leakage signal on other paths is transmitted from the first port A of the RF switching circuit to the second port B. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be grounded, and the number N of the connected voltage balancing networks is 1, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the i+1th switching transistor to the i+mth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved to the greatest extent, the harmonic signals generated by the voltage division unevenness of the switching transistors can be reduced, and the linear performance of the RF switching circuit can be improved, thereby improving the reliability and stability of the RF switching circuit.

[0158] It should be noted that the specific implementation methods and functions of the first branch and the second branch in the first voltage balancing network in this embodiment are the same as the specific implementation methods and functions of the first branch and the second branch of the voltage balancing network in the above embodiment, and no redundant description is given here.

[0159] In one embodiment, the first port is configured as a first signal transmission port connection, the second port is configured to be grounded, the at least one voltage balancing network includes a first voltage balancing network, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the switching transistors from the i+2th switching transistor to the i+m-1th switching transistor, the second end of the first branch in the first voltage balancing network is connected to the second end of the second branch or the second end of the first branch is left floating.

[0160] In at least one embodiment, when the RF switching circuit is in the off state, the leakage signal on other paths is transmitted from the first port A of the RF switching circuit to the second port B. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be grounded, and the number N of the connected voltage balancing networks is 1, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the switching transistors from the i+2th switching transistor to the i+m-1th switching transistor, and the second end of the first branch in the first voltage balancing network is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved to the greatest extent, and the harmonic signals generated by the voltage division unevenness of the switching transistors can be reduced, thereby improving the linear performance of the RF switching circuit, and thereby improving the reliability and stability of the RF switching circuit.

[0161] It should be noted that the specific implementation methods and functions of the first branch and the second branch in the first voltage balancing network in this embodiment are the same as the specific implementation methods and functions of the first branch and the second branch of the voltage balancing network in the above embodiment, and no redundant description is given here.

[0162] like Figure 27 As shown, in the embodiment of the present application, when the first port of the RF switch circuit is configured to be connected to the first signal transmission port, the second port is configured to be grounded, the number of the voltage balancing networks is N (N is less than K), and the N voltage balancing networks are sequentially arranged in the direction from the first port to the second port, the simulation effect diagram is shown, wherein the horizontal axis represents the power Pin of the input signal, and the vertical axis represents the power of the harmonic signal. By Figure 24 and Figure 27 By comparison, it can be seen that in the related art, when there is no access to the uniform network, as the input power Pin increases, the power of the harmonic signal increases rapidly. However, in this application, by sequentially setting up access to a partial uniform network in the direction from the first port of the RF switch circuit to the second port, as the input power Pin increases, the power of the harmonic signal increases more slowly. For example, taking the input power also within the range of [44dBm, 50dBm] as an example, Figure 24 In the case of no access to a uniform network, when the input power increases from 44dBm to 50dBm, the power of the harmonic signal Harminics increases from -60dBm to -22dBm, an increase of 38dBmm. Figure 27After the access part uniform network is sequentially set in the direction from the first port of the RF switch circuit to the second port, the power of its harmonic signal increases from -57Bm to close to -25dBm, with an increase of only 32dBm. It can be seen from this that the present application can also improve to a certain extent the situation where a large number of harmonic signals are generated due to uneven voltage division of the switching transistors in the RF switch circuit by sequentially setting the access part uniform network in the direction from the first port of the RF switch circuit to the second port, thereby improving the linear performance of the RF switch circuit.

[0163] like Figure 27 and Figure 28 As shown, they are all simulation effect diagrams when the first port of the RF switch circuit is configured to be connected to the first signal transmission port, the second port is configured to be grounded, and N voltage-sharing networks are sequentially arranged in the direction from the first port to the second port. Figure 27 This is a simulation diagram of connecting only the first quarter of the switching transistors in the RF switching circuit to the uniform network, that is, N = 1 / 4K. Figure 28 This is a simulation diagram of the first half of the switching transistor in the RF switching circuit being connected to a uniform network, that is, N = 1 / 2K. Figure 27 In the example, when the input power increases from 44dBm to 50dBm, the power of its harmonic signal increases from -57dBm to nearly -25dBm, an increase of 32dBm. Figure 28 In the example, when the input power increases from 44dBm to 50dBm, the power of its harmonic signal increases from -57dBm to nearly -35dBm, with an increase of 22dBm. Figure 27 and Figure 28 By comparison, it can be seen that when the first port of the RF switching circuit is configured to be connected to the first signal transmission port, the second port is configured to be grounded, and N of the voltage equalizing networks are arranged sequentially in the direction from the first port to the second port, the more voltage equalizing networks N connected to the RF switching circuit, that is, when more switching transistors are connected to the voltage equalizing network, the better it can improve the situation where a large number of harmonic signals are generated due to uneven voltage division of the switching transistors in the RF switching circuit, and the better the linear performance of the RF switching circuit.

[0164] like Figure 16 As shown, in a specific embodiment, the first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port.

[0165] The number of the voltage balancing networks is M, and the M voltage balancing networks include P first voltage balancing units and Q second voltage balancing units, wherein M is an integer greater than or equal to 2, and P and Q are integers greater than or equal to 1 and less than M;

[0166] P first voltage balancing units are sequentially arranged in a direction from the first port to the second port; wherein the body region connection end of the first first voltage balancing unit is connected to the body region of the first switching transistor, and the body region connection end of the Pth first voltage balancing unit is connected to the body region of the Pth switching transistor;

[0167] Q second-level voltage balancing units are arranged in sequence in the direction from the second port to the first port; wherein the body region connection end of the first-level voltage balancing network is connected to the body region of the K-th switching transistor, and the body region connection end of the Q-th second-level voltage balancing unit is connected to the body region of the KQ-th switching transistor.

[0168] In at least one embodiment, the first signal transmission port can be used to input or output RF signals, and the second signal transmission port can also be used to input or output RF signals. In actual application, when the RF switch circuit is in the on state, the RF signal to be transmitted may be transmitted to the RF switch circuit through the first signal transmission port, or it may be transmitted to the RF switch circuit through the second signal transmission port. When the RF switch circuit is in the off state, the leakage signal on other paths may leak to the RF switch circuit through the first signal transmission port, or it may be transmitted to the RF switch circuit through the second signal transmission port, thereby causing the body leakage current Ib to be generated, resulting in deterioration of the linear performance of the RF switch circuit and aggravation of the uneven voltage division of the switching transistor.

[0169] In at least one embodiment, the first signal transmission port and the second signal transmission port may be any two different ports on a serial path of a signal transmission link.

[0170] In at least one embodiment, when the RF switch circuit is in the off state, a leakage signal leaked from a path connected to the first port A of the RF switch circuit can be transmitted from the first port A of the RF switch circuit to the second port B of the RF switch circuit, and a leakage signal leaked from a path connected to the second port B of the RF switch circuit can be transmitted from the second port B of the RF switch circuit to the first port A of the RF switch circuit. In other words, the closer the switching transistor is to the first port A and the second port B of the RF switch circuit, the greater the body leakage current. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be grounded and connected to the second signal transmission port, and the number M of the connected voltage balancing networks is less than or equal to the number K of switching transistors, by dividing the M voltage balancing networks into P first voltage balancing units and Q second voltage balancing units, P and Q are integers greater than or equal to 1 and less than M, and the P first voltage balancing units are arranged in sequence in the direction from the first port to the second port; wherein, the body region connection end of the first first voltage balancing unit is connected to the body region of the first switching transistor, and the body region connection end of the Pth first voltage balancing unit is connected to the body region of the Pth switching transistor; Q second voltage balancing units are arranged in sequence in the direction from the second port to the first port; wherein, the body region connection end of the first voltage balancing network is connected to the body region of the Kth switching transistor, and the body region connection end of the Qth second voltage balancing unit is connected to the body region of the KQth switching transistor. Therefore, when some switching transistors are connected to the voltage-equalizing network, the uneven voltage division of the switching transistors in the RF switching circuit can be improved, and the harmonic signals generated by the uneven voltage division of the switching transistors can be reduced, thereby improving the linear performance of the RF switching circuit and improving the reliability and stability of the RF switching circuit.

[0171] As an example, Figure 16 As shown, the number of the voltage balancing networks is 4, the body connection end of the first voltage balancing unit 1001 is connected to the body region of the first switching transistor, the body connection end of the first voltage balancing unit 1002 is connected to the body region of the second switching transistor, the body connection end of the second voltage balancing unit 1003 is connected to the body region of the K-1th switching transistor, and the body connection end of the second voltage balancing unit 1004 is connected to the body region of the Kth switching transistor, that is, the connected voltage balancing units are all arranged close to the first port and the second port. It should be noted that this embodiment specifically defines the connection node of the body connection end of the voltage balancing network (that is, the connection node between the first end of the first branch and the first end of the second branch in the voltage balancing network). The connection method and connection node of the second end of the first branch and the second end of the second branch in the voltage balancing network refer to the above embodiment and are not redundantly described here.

[0172] like Figure 17As shown, in at least one embodiment, the first port is configured to be connected to the first signal transmission port, and the second port is configured to be connected to the second signal transmission port; at least one voltage balancing network includes a first voltage balancing network and a second voltage balancing network; the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the second switching transistor to the 1+m switching transistors, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; the body region connection end of the second voltage balancing network is connected to the body region of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the K-1th switching transistor to the Knth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0173] In at least one embodiment, when the RF switch circuit is in the off state, the leakage signal leaked from the path connected to the first port A of the RF switch circuit is transmitted from the first port A of the RF switch circuit to the second port B, and the leakage signal leaked from the path connected to the second port B of the RF switch circuit can be transmitted from the second port B of the RF switch circuit to the first port A. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be connected to the second signal transmission port, and the number N of the connected voltage balancing networks is 2 (i.e., including the first voltage balancing network and the second voltage balancing network), the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, and the second end of the second branch in the first voltage balancing network is connected to any one of the second switching transistor to the 1+m switching transistors. At the source-drain connection node of a switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; the body region connection end of the second voltage balancing network is connected to the body region of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the K-1th switching transistor to the Knth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved to the greatest extent, the harmonic signal generated by the voltage division unevenness of the switching transistors can be reduced, and the linear performance of the RF switching circuit can be improved, thereby improving the reliability and stability of the RF switching circuit.

[0174] It should be noted that the specific implementation methods and functions of the first branch and the second branch in the first voltage balancing network in this embodiment, and the specific implementation methods and functions of the first branch and the second branch in the second voltage balancing network are the same as the specific implementation methods and functions of the first branch and the second branch of the voltage balancing network in the above embodiment, and no redundant description is given here.

[0175] In at least one embodiment, Figure 18 As shown, the first port is configured to be connected to the first signal transmission port, and the second port is configured to be connected to the second signal transmission port; at least one voltage balancing network includes a first voltage balancing network and a second voltage balancing network; the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the switching transistors from the 3rd switching transistor to the mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; the body region connection end of the second voltage balancing network is connected to the body region of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source of any one of the switching transistors from the K-2th switching transistor to the K-n+1th switching transistor, the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

[0176] In at least one embodiment, when the RF switch circuit is in the off state, the leakage signal leaked from the path connected to the first port A of the RF switch circuit is transmitted from the first port A of the RF switch circuit to the second port B, and the leakage signal leaked from the path connected to the second port B of the RF switch circuit can be transmitted from the second port B of the RF switch circuit to the first port A. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be connected to the second signal transmission port, and the number N of the connected voltage balancing networks is 2 (i.e., including the first voltage balancing network and the second voltage balancing network), the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, and the second end of the second branch in the first voltage balancing network is connected to the third switching transistor to the mth switching transistor The drain of any switching transistor in the first branch, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; the body region connection end of the second voltage balancing network is connected to the body region of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source of any switching transistor from the K-2th switching transistor to the K-n+1th switching transistor, the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved to the greatest extent, the harmonic signal generated by the voltage division unevenness of the switching transistors can be reduced, and the linear performance of the RF switching circuit can be improved, thereby improving the reliability and stability of the RF switching circuit.

[0177] It should be noted that the specific implementation methods and functions of the first branch and the second branch in the first voltage balancing network in this embodiment, and the specific implementation methods and functions of the first branch and the second branch in the second voltage balancing network are the same as the specific implementation methods and functions of the first branch and the second branch of the voltage balancing network in the above embodiment, and no redundant description is given here.

[0178] In at least one embodiment, Figure 19As shown, the first port is configured to be connected to the first signal transmission port, and the second port is configured to be connected to the second signal transmission port; the number of the voltage balancing networks is M, and the M voltage balancing networks include P first voltage balancing units and Q second voltage balancing units, wherein M is an integer greater than or equal to 2, and P and Q are integers greater than or equal to 1 and less than M; the P first voltage balancing units are arranged in sequence in the direction from the first port to the second port; wherein, the gate connection end of the first first voltage balancing unit is connected to the gate of the first switching transistor, and the gate connection end of the Pth first voltage balancing unit is connected to the gate of the Pth switching transistor; the Q second voltage balancing units are arranged in sequence in the direction from the second port to the first port; wherein, the gate connection end of the first voltage balancing network is connected to the gate of the Kth switching transistor, and the gate connection end of the Qth second voltage balancing unit is connected to the gate of the KQth switching transistor.

[0179] In at least one embodiment, the first signal transmission port can be used to input or output RF signals, and the second signal transmission port can also be used to input or output RF signals. In actual application, when the RF switch circuit is in the on state, the RF signal to be transmitted may be transmitted to the RF switch circuit through the first signal transmission port, or it may be transmitted to the RF switch circuit through the second signal transmission port. When the RF switch circuit is in the off state, the leakage signal on other paths may leak to the RF switch circuit through the first signal transmission port, or it may be transmitted to the RF switch circuit through the second signal transmission port, thereby causing the body leakage current Ib to be generated, resulting in deterioration of the linear performance of the RF switch circuit and aggravation of the uneven voltage division of the switching transistor.

[0180] In at least one embodiment, the first signal transmission port and the second signal transmission port may be any two different ports on a serial path of a signal transmission link.

[0181] In at least one embodiment, when the RF switch circuit is in the off state, the leakage signal leaked from the path connected to the first port A of the RF switch circuit can be transmitted from the first port A of the RF switch circuit to the second port B, and the leakage signal leaked from the path connected to the second port B of the RF switch circuit can be transmitted from the second port B of the RF switch circuit to the first port A. In other words, the closer the body region leakage current on the switching transistor is to the first port A and the second port B of the RF switch circuit, the greater the current. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be grounded and connected to the second signal transmission port, and the number M of the connected balancing networks is less than or equal to the number K of switching transistors, the M balancing networks are divided into P first balancing units and Q second balancing units, where P and Q are integers greater than or equal to 1 and less than M, and the P first balancing units are arranged in sequence in the direction from the first port to the second port; wherein the gate connection terminal of the first first balancing unit is connected to the gate of the first switching transistor, and the gate connection terminal of the Pth first balancing unit is connected to the gate of the Pth switching transistor. The connection end is connected to the gate of the Pth switching transistor; Q second balancing units are arranged in sequence in the direction from the second port to the first port; wherein, the gate connection end of the first said balancing network is connected to the gate of the Kth switching transistor, and the gate connection end of the Qth second balancing unit is connected to the gate of the KQth switching transistor; thereby, when some switching transistors are connected to the balancing network, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved, the harmonic signal generated by the voltage division unevenness of the switching transistors can be reduced, and the linear performance of the RF switching circuit can be improved, thereby improving the reliability and stability of the RF switching circuit.

[0182] As an example, Figure 19 As shown, the number of the voltage balancing networks is 4, the gate connection end of the first voltage balancing unit 1001 is connected to the gate of the first switching transistor, the gate connection end of the first voltage balancing unit 1002 is connected to the gate of the second switching transistor, the gate connection end of the second voltage balancing unit 1003 is connected to the gate of the K-1th switching transistor, and the gate connection end of the second voltage balancing unit 1004 is connected to the gate of the Kth switching transistor, that is, the connected voltage balancing units are all arranged close to the first port and the second port. It should be noted that this embodiment specifically defines the connection node of the gate connection end of the voltage balancing network (that is, the connection node of the first end of the first branch and the first end of the second branch in the voltage balancing network). The connection method and connection node of the second end of the first branch and the second end of the second branch in the voltage balancing network refer to the above embodiment and are not redundantly described here.

[0183] In at least one embodiment, the first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port; at least one voltage balancing network includes a first voltage balancing network and a second voltage balancing network; the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the second switching transistor to the 1+mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; the gate connection end of the second voltage balancing network is connected to the gate of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the K-1th switching transistor to the Knth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0184] In at least one embodiment, when the RF switch circuit is in the off state, the leakage signal leaked from the path connected to the first port A of the RF switch circuit is transmitted from the first port A of the RF switch circuit to the second port B, and the leakage signal leaked from the path connected to the second port B of the RF switch circuit can be transmitted from the second port B of the RF switch circuit to the first port A. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be connected to the second signal transmission port, and the number N of the connected voltage balancing networks is 2 (i.e., including the first voltage balancing network and the second voltage balancing network), the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, and the second end of the second branch in the first voltage balancing network is connected to any one of the second switching transistor to the 1+m switching transistors. The second end of the first branch is connected to the second end of the second branch at the source-drain connection node of a switching transistor, or the second end of the first branch is left floating; the gate connection end of the second voltage balancing network is connected to the gate of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the K-1th switching transistor to the Knth switching transistor, the second end of the first branch is connected to the second end of the second branch, or the second end of the first branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved to the greatest extent, the harmonic signal generated by the voltage division unevenness of the switching transistors can be reduced, and the linear performance of the RF switching circuit can be improved, thereby improving the reliability and stability of the RF switching circuit.

[0185] In at least one embodiment, the first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port; at least one voltage balancing network includes a first voltage balancing network and a second voltage balancing network; the gate connection end of the first voltage balancing network is connected to the gate region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the switching transistors from the 3rd switching transistor to the mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; the gate connection end of the second voltage balancing network is connected to the gate of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source of any one of the switching transistors from the K-2th switching transistor to the K-n+1th switching transistor, the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

[0186] In at least one embodiment, when the RF switch circuit is in the off state, the leakage signal leaked from the path connected to the first port A of the RF switch circuit is transmitted from the first port A of the RF switch circuit to the second port B, and the leakage signal leaked from the path connected to the second port B of the RF switch circuit can be transmitted from the second port B of the RF switch circuit to the first port A. Therefore, in this embodiment, when the first port A is configured to be connected to the first signal transmission port, the second port is configured to be connected to the second signal transmission port, and the number N of the connected voltage balancing networks is 2 (i.e., including the first voltage balancing network and the second voltage balancing network), the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, and the second end of the second branch in the first voltage balancing network is connected to the gate of the mth switching transistor. The drain of any switching transistor in the tube, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; the gate connection end of the second voltage balancing network is connected to the gate of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source of any switching transistor from the K-2th switching transistor to the K-n+1th switching transistor, the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the voltage division unevenness of the switching transistors in the RF switching circuit can be improved to the greatest extent, the harmonic signal generated by the voltage division unevenness of the switching transistors can be reduced, the linear performance of the RF switching circuit can be improved, and the reliability and stability of the RF switching circuit can be improved.

[0187] like Figure 29As shown, in the embodiment of the present application, when the first port of the RF switch circuit is configured to be connected to the first signal transmission port, and the second port is configured to be connected to the second signal transmission port, the number of the voltage balancing networks is M, and the M voltage balancing networks include P first voltage balancing units and Q second voltage balancing units. The P first voltage balancing units are arranged in sequence in the direction from the first port to the second port; the Q second voltage balancing units are arranged in sequence in the direction from the second port to the first port. The simulation effect diagram is shown, wherein the horizontal axis represents the power Pin of the input signal, and the vertical axis represents the power of the harmonic signal. By Figure 24 and Figure 29 By comparison, it can be seen that in the related art, when there is no access to the uniform network, as the input power Pin increases, the power of the harmonic signal increases rapidly. However, in this application, by sequentially setting up access to a partial uniform network in the direction from the first port of the RF switch circuit to the second port, as the input power Pin increases, the power of the harmonic signal increases more slowly. For example, taking the input power also within the range of [44dBm, 50dBm] as an example, Figure 24 In the case of no access to a uniform network, when the input power increases from 44dBm to 50dBm, the power of the harmonic signal increases from -60dBm to -22dBm, an increase of 38dBmm. Figure 29 For the embodiment of the present application, P first voltage balancing units are sequentially arranged in the direction from the first port of the RF switch circuit to the second port; Q second voltage balancing units are sequentially arranged in the direction from the second port of the RF switch circuit to the first port. After that, the power of its harmonic signal increases from -60Bm to close to -25dBm, and the increase is only 35dBm. It can be seen that in the embodiment of the present application, by sequentially arranging P first voltage balancing units in the direction from the first port of the RF switch circuit to the second port; Q second voltage balancing units are sequentially arranged in the direction from the second port of the RF switch circuit to the first port, the situation in which a large number of harmonic signals are generated due to uneven voltage division of the switching transistors in the RF switch circuit can be improved to a certain extent, thereby improving the linear performance of the RF switch circuit.

[0188] like Figure 29 and Figure 30 The figures shown are all simulation effect diagrams of this embodiment when the first port of the RF switch circuit is configured to be connected to the first signal transmission port, the second port is configured to be connected to the second signal transmission port, P first voltage balancing units are sequentially arranged in the direction from the first port of the RF switch circuit to the second port; Q second voltage balancing units are sequentially arranged in the direction from the second port of the RF switch circuit to the first port. Figure 30and with Figure 29 The difference is that the number P of the first pressure balancing units is different from the number N of the second pressure balancing units. Figure 30 The number P of the connected first voltage balancing units and the number N of the second voltage balancing units are greater than Figure 29 The number P of the connected first voltage balancing units and the number N of the connected second voltage balancing units. Figure 29 In the example, when the input power increases from 44dBm to 50dBm, the power of its harmonic signal increases from -60dBm to nearly 25dBm, with an increase of 35dBm. Figure 30 In the example, when the input power increases from 44dBm to 50dBm, the power of its harmonic signal increases from -60dBm to nearly -27dBm, with an increase of 23dBm. Figure 29 and Figure 30 By comparison, it can be seen that when the first port of the RF switching circuit is configured to be connected to the first signal transmission port, and the second port is configured to be connected to the second signal transmission port, and P first voltage equalizing units are arranged sequentially in the direction from the first port of the RF switching circuit to the second port, the more voltage equalizing networks N connected to the RF switching circuit, that is, when more switching transistors are connected to the voltage equalizing network, the better it can improve the situation where a large number of harmonic signals are generated due to uneven voltage division of the switching transistors in the RF switching circuit, and the better the linear performance of the RF switching circuit.

[0189] In at least one embodiment, Figure 20 As shown, each of the switch units further includes a body bias resistor RB, a first end of the body bias resistor RB is connected to the body region of the switch transistor, and a second end of the body bias resistor is configured to be connected to the body bias voltage terminal Vb.

[0190] In at least one embodiment, the body bias voltage terminal Vb outputs the body bias voltage to each switching transistor through the body bias resistor RB, thereby ensuring that the switching transistor can maintain a stable operating state under the action of the radio frequency signal and reducing performance fluctuations caused by changes in the body potential.

[0191] In at least one embodiment, the number of the switch units is the same as the number of the voltage balancing networks, and each of the switch transistors is connected to a corresponding voltage balancing network.

[0192] In at least one embodiment, by connecting a voltage balancing network to the body region or gate of each switching transistor, it is possible to ensure that the leakage current Ib on the body region of each switching transistor in the RF switching circuit is diverted to other nodes through the first branch and the second branch of the connected voltage balancing network, so as to reduce the amplitude of the body region voltage VB being raised due to the leakage current Ib on the body region of the switching transistor Mx, thereby maximally improving the voltage division unevenness of the switching transistors in the RF switching circuit, reducing the harmonic signals generated by the voltage division unevenness of the switching transistors, thereby improving the linear performance of the RF switching circuit, and thereby improving the reliability and stability of the RF switching circuit.

[0193] In at least one embodiment, the radio frequency switching circuit includes K switching units and K voltage balancing networks, the body connection end of one of the voltage balancing networks is connected to the body region of one of the switching transistors, different voltage balancing networks are connected to the body regions of different switching transistors, the first resistor and the second resistor of each switching unit are connected between the source and the drain of the switching transistor, the voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the body connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, the second branch includes m second transistors connected in series between the first end and the second end of all the second branches, n and m are integers greater than or equal to 1, the second end of the second branch of the first voltage balancing network is connected to the i+1th switching transistor to the i+mth switching transistor. At the source-drain connection node of any switching transistor in the transistors, the second end of the first branch of the first voltage balancing network is connected to the second end of the second branch, or the second end of the first branch is left floating; the second end of the first branch of the second voltage balancing network to the K-1th voltage balancing network is connected to the source-drain connection node of any switching transistor from the i-1th switching transistor to the inth switching transistor, the second end of the second branch of the second voltage balancing network to the K-1th voltage balancing network is connected to the source-drain connection node of any switching transistor from the i+1th switching transistor to the i+mth switching transistor, the second end of the first branch of the Kth voltage balancing network is connected to the source-drain connection node of any switching transistor from the i-1th switching transistor to the inth switching transistor, the second end of the first branch of the Kth voltage balancing network is connected to the source-drain connection node of any switching transistor from the i-1th switching transistor to the inth switching transistor, the second end of the first branch of the Kth voltage balancing network is connected to the second end of the second branch, or the second end of the first branch is left floating.

[0194] In at least one embodiment, the radio frequency switching circuit includes K switching units and K voltage balancing networks, the body connection end of one of the voltage balancing networks is connected to the body region of one of the switching transistors, and different voltage balancing networks are connected to the body regions of different switching transistors. The voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the body connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of all the second branches, n and m are integers greater than or equal to 1, and the second end of the second branch of the first voltage balancing network is connected to any one of the i+2th switching transistor to the i+m-1th switching transistor. The drain of a switching transistor, the second end of the first branch of the first voltage balancing network is connected to the second end of the second branch, or the second end of the first branch is left floating, the second end of the first branch of the second voltage balancing network to the K-1th voltage balancing network is connected to the source of any one switching transistor from the i-2th switching transistor to the (i-n+1th) switching transistor, the second end of the second branch of the second voltage balancing network to the (K-1th) voltage balancing network is connected to the drain of any one switching transistor from the (i+2th) switching transistor to the (i+m-1th) switching transistor, the second end of the first branch of the Kth voltage balancing network is connected to the source of any one switching transistor from the (i-2th) switching transistor to the (i-n+1th) switching transistor, the second end of the second branch of the Kth voltage balancing network is connected to the source of any one switching transistor from the (i-2nd) switching transistor to the (i-n+1th) switching transistor, the second end of the second branch of the Kth voltage balancing network is connected to the second end of the first branch, or the second end of the second branch is left floating.

[0195] In at least one embodiment, the radio frequency switching circuit includes K switching units and K voltage balancing networks, the first resistor and the second resistor of each switching unit are connected between the source and the drain of the switching transistor, the self-bias transistor of each switching unit is connected between the gate and the body region of the switching transistor, the gate connection end of one of the voltage balancing networks is connected to the gate of one of the switching transistors, and different voltage balancing networks are connected to the gates of different switching transistors. The voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, the second branch includes m second transistors connected in series between the first end and the second end of all the second branches, n and m are integers greater than or equal to 1, and the second end of the second branch of the first voltage balancing network is connected to To the source-drain connection node of any one of the i+1th to i+mth switching transistors, the second end of the first branch of the first voltage balancing network is connected to the second end of the second branch, or the second end of the first branch is left floating; the second end of the first branch of the second voltage balancing network to the K-1th voltage balancing network is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, and the second end of the second branch of the second voltage balancing network to the K-1th voltage balancing network is connected to the source-drain connection node of any one of the i+1th to i+mth switching transistors; the second end of the first branch of the Kth voltage balancing network is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, the second end of the first branch of the Kth voltage balancing network is connected to the source-drain connection node of any one of the i-1th to inth switching transistors, or the second end of the first branch is left floating.

[0196] In at least one embodiment, the radio frequency switching circuit includes K switching units and K voltage balancing networks, wherein the self-biased transistor of each switching unit is connected between the gate and the body region of the switching transistor; the gate connection end of one of the voltage balancing networks is connected to the gate of one of the switching transistors, and different voltage balancing networks are connected to the gates of different switching transistors, the voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of all the second branches, where n and m are both greater than or equal to 1; the second end of the second branch of the first voltage balancing network is connected to the i+2th switching transistor to the i+3th switching transistor. The drain of any one of the m-1 switching transistors, the second end of the first branch of the first voltage balancing network is connected to the second end of the second branch, or the second end of the first branch is left floating; the second end of the first branch of the second voltage balancing network to the K-1th voltage balancing network is connected to the source of any one of the i-2th to i-n+1th switching transistors, and the second end of the second branch of the second voltage balancing network to the K-1th voltage balancing network is connected to the drain of any one of the i+2th to i+m-1th switching transistors; the second end of the first branch of the Kth voltage balancing network is connected to the source of any one of the i-2th to i-n+1th switching transistors, and the second end of the second branch of the Kth voltage balancing network is connected to the second end of the first branch, or the second end of the second branch is left floating.

[0197] as follows Figure 26 As shown in FIG. 1 , it is a simulation diagram of an embodiment of the present application in which each of the switching transistors in the RF switching circuit is connected to a corresponding voltage balancing network, wherein the horizontal axis represents the power Pin of the input signal and the vertical axis represents the power of the harmonic signal. Taking the input power also being in the range of [44dBm, 50dBm] as an example, in this embodiment, after each of the switching transistors in the RF switching circuit is connected to a corresponding voltage balancing network, when the input power increases from 44dBm to 50dBm, the power of the harmonic signal increases from -56dBm to -44dBm, with an increase of 12dB / mm, which is lower than that of other embodiments of the present application ( Figure 25 (As shown in the figure) In the case where only part of the switching transistors in the RF switching circuit are connected to the voltage balancing network, the increase in harmonics is smaller. It can be seen that each of the switching transistors in the RF switching circuit is connected to a corresponding voltage balancing network, which can maximize the improvement of the situation where a large number of harmonic signals are generated due to uneven voltage division of the switching transistors in the RF switching circuit, thereby improving the linear performance of the RF switching circuit.

[0198] In at least one embodiment, the first transistor is a first diode, the first end of the first branch is configured to be connected to the anode of the 1st first diode, the second end of the first branch is configured to be connected to the cathode of the nth first diode, the cathode of the jth first diode is connected to the anode of the j+1th first diode, and j is an integer less than n and greater than or equal to 1; the second transistor is a second diode, the first end of the second branch is configured to be connected to the anode of the 1st second diode, the second end of the second branch is configured to be connected to the cathode of the mth second diode, the cathode of the zth second diode is connected to the anode of the z+1th first diode, and z is an integer less than m and greater than or equal to 1.

[0199] In a specific embodiment, n first diodes are sequentially connected in series between the first end and the second end of the first branch, and m second diodes are sequentially connected in series between the first end and the second end of the second branch. Two adjacent first diodes are used to connect two ends with different polarities, and two adjacent second diodes are used to connect two ends with different polarities. In other words, n first diodes are sequentially "connected in series in the same direction" to form the first branch, and m second diodes are sequentially "connected in series in the same direction" to form the second branch. In other embodiments, the first transistor and the second transistor can both be implemented using the same triode (e.g., field-effect transistor), which is not limited in this embodiment.

[0200] As an example, Figure 7 As shown, when both the first transistor and the second transistor are diodes, among two adjacent first diodes, the anode of one first diode is connected to the cathode of the other first diode, and the anode of each first diode is closer to the first end of the first branch than the cathode. Similarly, among two adjacent second diodes, the anode of one second diode is connected to the cathode of the other second diode, and the anode of each second diode is closer to the first end of the second branch than the cathode.

[0201] In one embodiment, each first diode has a forward voltage. The forward voltage of the first branch depends not only on the forward voltage of each first diode but also on the number n of first diodes. For example, if the forward voltage of each first diode is 0.7V and the number n of first diodes is 4, then the forward voltage Vth1 of the first branch is 0.7V*4=2.8V. Similarly, each second diode has a forward voltage. The forward voltage of the second branch depends not only on the forward voltage of each second diode but also on the number n of second diodes. For example, if the forward voltage of each second diode is 0.7V and the number m of second diodes is 4, then the forward voltage Vth2 of the second branch is 0.7V*4=2.8V.

[0202] In one specific embodiment, to reduce the voltage breakdown of the switching transistor in the RF switching circuit, it is necessary to ensure that the first branch and the second branch are turned on before the switching transistor breaks down, thereby dissipating the body leakage current Ib. In actual applications, the number of first transistors in the first branch and second transistors in the second branch can be appropriately set based on the breakdown voltage of the switching transistor.

[0203] In at least one embodiment, the first diode and the second diode have the same forward voltage, and the number n of the first diodes and the number m of the second diodes are the same. Therefore, the forward voltage Vth1 of the first branch and the forward voltage Vth2 of the second branch are the same.

[0204] In at least one embodiment, the first transistor is a first field-effect transistor, the source of each of the first field-effect transistors is connected to the corresponding gate, the first end of the first branch is configured to be connected to the source of the 1st first field-effect transistor, the second end of the first branch is configured to be connected to the drain of the nth first field-effect transistor, the drain of the jth first field-effect transistor is connected to the source of the j+1th first field-effect transistor, and j is an integer less than m and greater than or equal to 1; the second transistor is a second field-effect transistor, the source of each of the second field-effect transistors is connected to the corresponding gate, the first end of the second branch is configured to be connected to the source of the 1st second field-effect transistor, the second end of the second branch is configured to be connected to the drain of the mth second field-effect transistor, the drain of the zth second field-effect transistor is connected to the source of the z+1th second field-effect transistor, and z is an integer less than m and greater than or equal to 1.

[0205] In a specific embodiment, n first field-effect transistors are sequentially connected in series between the first end and the second end of the first branch, and m second field-effect transistors are sequentially connected in series between the first end and the second end of the second branch. The polarities of the two adjacent first field-effect transistors used for connecting to each other are different, and the polarities of the two adjacent second field-effect transistors used for connecting to each other are different. In other words, n first field-effect transistors are sequentially "connected in series in the same direction" to form the first branch, and m second field-effect transistors are sequentially "connected in series in the same direction" to form the second branch. It should be noted that the working principle and function of the first field-effect transistor are the same as the working principle and function of the first diode, and the working principle and function of the second field-effect transistor are the same as the working principle and function of the second diode, and no redundant description is given here.

[0206] In at least one embodiment, when the voltage balancing network is connected to at least any one of the 2nd to K-1th switching transistors, the second end of the first branch of the voltage balancing network is connected to the source-drain connection node of the i-2 / nth switching transistor; the second end of the second branch of the voltage balancing network is connected to the source-drain connection node of the i+2 / mth switching transistor, wherein n and m are both even numbers.

[0207] like Figure 22 As shown, the number of first transistors on the first branch is 4, and the number of second transistors on the second branch is 4. The first end of the first branch of the voltage balancing network and the first end of the second branch are connected to the body region of the switching transistor Mx, and the second end of the first branch of the voltage balancing network is connected to the source-drain connection node of the MX-2 switching transistor; the second end of the second branch of the voltage balancing network is connected to the source-drain connection node of the MX+2 switching transistor. It can be understood that if the number of first transistors on the first branch is 6, and the number of second transistors on the second branch is 6, then the second end of the first branch of the voltage balancing network is connected to the source-drain connection node of the MX-3 switching transistor; and the second end of the second branch of the voltage balancing network is connected to the source-drain connection node of the MX+3 switching transistor.

[0208] It should be noted that this embodiment only makes specific restrictions on the connection node of the second end of the first branch of the voltage balancing network and the connection node of the second end of the second branch of the voltage balancing network when i is greater than 1 and less than K, and n and m are both even numbers. The first end of the first branch of the voltage balancing network and the first end of the second branch can be connected to the body region of the switching transistor Mx, and the first end of the first branch of the voltage balancing network and the first end of the second branch can also be connected to the gate of the switching transistor Mx. This embodiment does not make any restrictions.

[0209] In this embodiment, when the voltage balancing network is connected to at least any one of the second to K-1 switching transistors, the second end of the first branch of the voltage balancing network is connected to the source-drain connection node of the i-2 / nth switching transistor; the second end of the second branch of the voltage balancing network is connected to the source-drain connection node of the i+2 / mth switching transistor, wherein n and m are both even numbers, thereby ensuring that when a limited number of first transistors and second transistors are used, the first branch and the second branch are both turned on before the switching transistor is broken down to protect the switching transistor in the RF switching circuit, thereby achieving the purpose of taking into account both the area and performance of the RF switching circuit.

[0210] In at least one embodiment, when the voltage balancing network is connected to at least any one of the second switching transistor to the K-1th switching transistor, the second end of the first branch is connected to the The source of the switching transistor; the second end of the second branch is connected to the The drain of the switching transistor, wherein both n and m are odd numbers.

[0211] In at least one embodiment, Figure 23 As shown, the number of first transistors on the first branch is 3, and the number of second transistors on the second branch is 3. The first end of the first branch of the voltage balancing network and the first end of the second branch are connected to the body region of the switching transistor Mx, and the second end of the first branch of the voltage balancing network is connected to the source of the MX-2 switching transistor; the second end of the second branch of the voltage balancing network is connected to the drain of the MX+2 switching transistor. It can be understood that if the number of first transistors on the first branch is 5 and the number of second transistors on the second branch is 5, then the second end of the first branch of the voltage balancing network is connected to the source of the MX-3 switching transistor; and the second end of the second branch of the voltage balancing network is connected to the drain of the MX+3 switching transistor.

[0212] In this embodiment, when the voltage balancing network is connected to at least any one of the second switching transistor to the K-1th switching transistor, the second end of the first branch is connected to the The source of the switching transistor; the second end of the second branch is connected to the The drain of the switching transistor, wherein both n and m are odd numbers, can ensure that when a limited number of first transistors and second transistors are used, the first branch and the second branch are both turned on before the switching transistor is broken down to protect the switching transistor in the radio frequency switching circuit, thereby achieving the purpose of taking into account both the area and performance of the radio frequency switching circuit.

[0213] In at least one embodiment, the resistance values ​​of the first resistor R1 and the second resistor R2 are within the range of [5K ohms, 15K ohms]. The first resistor R1 and the second resistor R2 can provide a DC off potential for the off-state switching transistor, thereby preventing charge accumulation on the source / drain nodes of the switching transistor, which could cause premature breakdown of the switching transistor.

[0214] In at least one embodiment, the number n of the first transistors is the same as the number m of the second transistors.

[0215] In at least one embodiment, the number n of the first transistors is the same as the number m of the second transistors, thereby ensuring that the on-state voltage of the first branch is the same as the on-state voltage of the second branch, ensuring that the first branch and the second branch are turned on at the same time before the switching transistor is broken down, thereby better discharging the body leakage current Ib, and achieving better improvement in the uneven voltage division of the switching transistors in the RF switching circuit, reducing the harmonic signals generated by the uneven voltage division of the switching transistors, and thereby improving the linear performance of the RF switching circuit.

[0216] In at least one embodiment, the number n of the first transistors is greater than or equal to 4, and the number m of the second transistors is greater than or equal to 4.

[0217] In at least one embodiment, in an SOI process, the diode threshold voltage is 0.7V, the body bias voltage Vb of the switch transistor in the off state is -3V, and the radio frequency breakdown voltage of the switch transistor is 3.4V. If the number n of first transistors and the number m of second transistors are less than 4, for example, taking the number n of first transistors and the number m of second transistors as 3, the bias DC voltage on each transistor is 3V / 3=1V, where 3V is the body bias voltage Vb and 3 is the number of first transistors / second transistors. Since the first transistor and the second transistor are both reverse biased, if the first transistor on the first branch and the second transistor on the second branch are to be turned on, the external RF voltage applied to the first transistor and the second transistor must be 1V+0.7V=1.7V. At this time, the source-drain voltage of the switching transistor is 1.7V*2=3.4V, that is, the source-drain voltage of the switching transistor is 3.4V, which is close to the RF breakdown voltage of the switching transistor. In other words, both the first branch and the second branch begin to conduct to discharge the leakage current Ib when the source-drain voltage of the switching transistor is equal to the RF breakdown voltage of the switching transistor. At this time, the switching transistor is close to the breakdown state, and there is a high risk of breakdown of the switching transistor.

[0218] To address this, this embodiment limits the number n of the first transistors to be greater than or equal to 4, and the number m of the second transistors to be greater than or equal to 4. For example, taking the number n of the first transistors and the number m of the second transistors to be 4 as an example, the diode threshold voltage is 0.7V, the body region bias voltage Vb of the switching transistor in the off state is -3V, and the RF breakdown voltage of the switching transistor is 3.4V. At this time, the bias DC voltage on each transistor is 3V / 4=0.75V, where 3V is the body region bias voltage Vb, and 4 is the number of the first transistor / the number of the second transistor. Since the first transistor and the second transistor are both reverse biased, at this time, if the first transistor on the first branch and the second transistor on the second branch are to be turned on, the external RF voltage applied to the first transistor and the second transistor is The voltage needs to be 0.75V+0.7V=1.45V. At this time, the source-drain voltage of the switching transistor is 1.45*2=2.9V, that is, when the source-drain voltage of the switching transistor is equal to 2.9V, the first branch and the second branch start to conduct to discharge the leakage current Ib. Since the first branch and the second branch start to conduct to discharge the leakage current Ib when the source-drain voltage of the switching transistor is 2.9V, which is far less than the RF breakdown voltage of the switching transistor of 3.4V, the possibility of the switching transistor being broken down is reduced to the greatest extent, and the linear performance of the RF switching circuit and the uneven voltage division of the switching transistor in the RF switching circuit are better improved.

[0219] In a specific embodiment, the total on-state voltage of n first transistors connected in series on the first branch is greater than or equal to the gate voltage of the switching transistor; the total on-state voltage of m second transistors connected in series on the second branch is greater than or equal to the gate voltage of the switching transistor.

[0220] In at least one embodiment, each first transistor has a fixed on-state voltage, and each second transistor also has a fixed on-state voltage. For example, assuming the first and second transistors are diodes, if the on-state voltage of a first transistor is 0.7V and the on-state voltage of a second transistor is 0.7V, and assuming n and m are 4, then the total on-state voltage of the n first transistors connected in series on the first branch is 0.7V*4=2.8V; the total on-state voltage of the m second transistors connected in series on the second branch is 0.7V*4=2.8V.

[0221] In at least one embodiment, the first end of the first branch and the first end of the second branch are both connected to the gate of the switching transistor, and the second end of the first branch and the second end of the second branch are connected to the source or drain of the switching transistor. Therefore, in order to improve the situation where the gate voltage of the switching transistor leaks to the source or drain of the switching transistor, this embodiment limits the total on-state voltage of n first transistors connected in series on the first branch to be greater than or equal to the gate voltage of the switching transistor; and the total on-state voltage of m second transistors connected in series on the second branch to be greater than or equal to the gate voltage of the switching transistor, so as to improve the situation where the gate voltage on the switching transistor leaks to the source and / or drain of the switching transistor through the first transistor on the first branch and the second transistor on the second branch, thereby ensuring that the source and / or drain voltages of the transistors are both 0V when the RF switching circuit is in the off state.

[0222] In a specific embodiment, the self-biasing transistor includes a self-biasing diode, an anode of the self-biasing diode is connected to a body region of the corresponding switching transistor, and a cathode of the self-biasing diode is connected to a gate of the corresponding switching transistor.

[0223] In at least one embodiment, based on the characteristic that a diode exhibits low resistance when forward-conducting and maintains a high resistance state when reverse-conducting, the self-bias transistor is implemented using a diode, and the anode of the self-bias diode is connected to the body region corresponding to the switching transistor, and the cathode of the self-bias diode is connected to the gate of the switching transistor.

[0224] When the RF switching circuit is in the on state, the gate voltage of the switching transistor is a positive voltage (for example, 3V) and the body voltage is 0V. When the RF switching circuit switches from the on state to the off state, the gate voltage of the switching transistor becomes a negative voltage (for example, -3V) and the body voltage is 0V. At this time, the self-biased diode is turned on. As the self-biased diode is turned on, the gate voltage and the body voltage of the switching transistor gradually approach the same. For example, the gate voltage and the body voltage of the switching transistor are both -3V, so that the gate voltage of the switching transistor changes with the body voltage of the switching transistor, thereby achieving the purpose of reducing the amplitude of the body voltage VB being raised, so as to improve the uneven voltage division of the switching transistor in the RF switching circuit, reduce the harmonic signal generated by the uneven voltage division of the switching transistor, and thus improve the linear performance of the RF switching circuit.

[0225] In a specific embodiment, the first signal transmission port is configured to be connected to an antenna port, and the second signal transmission port is configured to be connected to an antenna port.

[0226] In a specific embodiment, the first signal transmission port is configured to be connected to a filter, and the second signal transmission port is configured to be connected to an amplifier.

[0227] In at least one specific embodiment, the first signal transmission port is configured to be connected to an antenna port, and the second signal transmission port is configured to be connected to a filter. The first signal transmission port and the antenna port may be directly connected, or other components (e.g., matching elements) may be provided between the first signal transmission port and the antenna port. The second signal transmission port and the filter may be directly connected, or other components (e.g., filtering elements or matching elements) may be provided between the second signal transmission port and the filter. The filter may be a filter on a receiving path or a filter on a transmitting path.

[0228] In at least one specific embodiment, the RF switching circuit may be a frequency band selection switch, wherein the first signal transmission port is connected to a filter, and the second signal transmission port is connected to an amplifier. The frequency band selection switch and the filter may be directly connected, or other components (e.g., matching elements) may be provided between the first signal transmission port and the filter. The frequency band selection switch and the amplifier may be directly connected, or other components (e.g., matching elements) may be provided between the frequency band selection switch and the antenna port. The amplifier may be a low noise amplifier on a receiving path or a power amplifier on a transmitting path.

[0229] This embodiment also provides a radio frequency module, including an antenna tuning circuit, wherein the antenna tuning circuit includes a first radio frequency switching circuit, wherein a first port of the first radio frequency switching circuit is configured to be connected to an antenna port, and a second port of the first radio frequency switching circuit is configured to be grounded; the first radio frequency switching circuit includes K switching units connected in series between the first port and the second port, each switching unit including a switching transistor, wherein the source of the first switching transistor is connected to the first port, the drain of the Kth switching transistor is connected to the second port, and the drain of the xth switching transistor is connected to the source of the x+1th switching transistor, wherein K is an integer greater than 1, and x is an integer less than K and greater than or equal to 1.

[0230] A first resistor and a second resistor are also connected between the source and the drain of each switching transistor, the first end of the first resistor is connected to the source of the switching transistor, the second end of the first resistor is connected to the first end of the second resistor to form a source-drain connection node, and the second end of the second resistor is connected to the source of the switching transistor.

[0231] It should be noted that the specific implementation and function of the switching transistor, the first resistor, and the second resistor included in the first RF switching circuit in this embodiment are the same as the specific implementation and function of the switching transistor, the first resistor, and the second resistor in the above embodiment, and are not redundantly described here.

[0232] In a specific embodiment, the antenna tuning circuit is configured to tune the impedance at the antenna and determine an optimal tuning state for antenna tuning based on the antenna impedance. In this embodiment, the first terminal of the first RF switch circuit is configured to be connected to the antenna through the antenna port, and the second terminal of the first RF switch circuit is configured to be grounded.

[0233] A first voltage balancing network, wherein the body connection end of the first voltage balancing network is connected to the body of the first switching transistor; the first voltage balancing network includes a first branch and a second branch, wherein the first end of the first branch and the first end of the second branch are connected to the body connection end of the first voltage balancing network; the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of all second branches, where n and m are integers greater than or equal to 3; the second end of the second branch is connected to the source-drain connection node of any one of the second switching transistors to the 1+m switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating. It should be noted that in this embodiment, the specific implementation and function of the first branch and the second branch in the first voltage balancing network are the same as the specific implementation and function of the first branch and the second branch of the voltage balancing network in the above embodiment, and are not redundantly described here.

[0234] In at least one embodiment, multiple tuner switches may be connected to the same antenna port, and different tuner switches may have different operating states. For example, when the first RF switch circuit is in the off state, the other tuner switches are in the on state. Therefore, the RF signals transmitted on the other tuner switches are likely to leak to the first RF switch circuit through the common connection port (antenna port), and then be transmitted to the second port B through the first port A of the first RF switch circuit, thereby causing an RF voltage to exist on the source and / or drain of the switching transistor of the first RF switch circuit, thereby generating a body leakage current Ib, resulting in uneven voltage division of the switching transistors in the tuner switch. To this end, in this embodiment, the body connection end of the first voltage balancing network is connected to the body region of the first switching transistor; the first voltage balancing network includes a first branch and a second branch, and the first end of the first branch and the first end of the second branch are connected to the body connection end of the first voltage balancing network; the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of all second branches, where n and m are integers greater than or equal to 3; the second end of the second branch is connected to the source-drain connection node of any one of the switching transistors from the second switching transistor to the 1+mth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, the linear performance of the tuner switch and the voltage division unevenness of the switching transistors in the tuner switch can be improved to the greatest extent, thereby improving the reliability and stability of the tuner switch.

[0235] In at least one embodiment, if there are multiple first voltage balancing networks, the multiple first voltage balancing networks are sequentially arranged in the direction from the first port to the second port; wherein the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, and the body region connection end of the Nth voltage balancing network is connected to the body region of the Nth switching transistor; wherein N is greater than 1 and

[0236] In at least one embodiment, since the power of the RF signal transmitted on the tuner switch is relatively high, when the first RF switch circuit is in the off state and the other tuner switches are in the on state, the power of the RF signal leaked from the other tuner switches is often greater, resulting in the RF signal power existing on the source and / or drain of the switching transistor being greater when the first RF switch circuit is in the off state, and thus the generated body leakage current Ib is also greater. To address this, this embodiment connects a voltage balancing network to the body region of each switching transistor in the first RF switch circuit, thereby maximally improving the linear performance of the first RF switch circuit and the uneven voltage division phenomenon of the switching transistors in the first RF switch circuit, thereby improving the reliability and stability of the first RF switch circuit.

[0237] This embodiment also provides a radio frequency module, including an antenna tuning circuit, the antenna tuning circuit including a first radio frequency switch circuit, a first port of the first radio frequency switch circuit being configured to be connected to an antenna port, and a second port of the first radio frequency switch circuit being configured to be grounded; the first radio frequency switch circuit including K switch units connected in series between the first port and the second port, each switch unit including a switch transistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer less than K and greater than or equal to 1; a first voltage balancing network, the first balancing network including a first voltage ... The body connection end of the voltage balancing network is connected to the body region of the first switching transistor; the first voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the body connection end of the first voltage balancing network; the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of all second branches, where n and m are integers greater than or equal to 3; the second end of the second branch is connected to the drain of any one switching transistor from the third switching transistor to the mth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0238] In this embodiment, the body connection end of the first voltage balancing network is connected to the body region of the first switching transistor; the first voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the body connection end of the first voltage balancing network; the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of all second branches, where n and m are integers greater than or equal to 3; the second end of the second branch is connected to the drain of any one switching transistor from the third switching transistor to the mth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the linear performance of the tuner switch and the voltage division unevenness of the switching transistors in the tuner switch can be improved to the greatest extent, thereby improving the reliability and stability of the tuner switch.

[0239] In at least one embodiment, if there are multiple first voltage balancing networks, the multiple first voltage balancing networks are sequentially arranged in a direction from the first port to the second port.

[0240] In at least one embodiment, a voltage balancing network is connected to the body region of each switching transistor of the first RF switching circuit, thereby maximally improving the linear performance of the first RF switching circuit and the uneven voltage division phenomenon of the switching transistors in the first RF switching circuit, thereby improving the reliability and stability of the first RF switching circuit.

[0241] This embodiment also provides a radio frequency module, including an antenna tuning circuit, the antenna tuning circuit including a first radio frequency switch circuit, wherein the first port of the first radio frequency switch circuit is configured to be connected to the antenna port, and the second port of the first radio frequency switch circuit is configured to be grounded; the first radio frequency switch circuit includes K switch units connected in series between the first port and the second port, each switch unit including a switch transistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer less than K and greater than or equal to 1; a self-bias transistor is connected between the gate and the body region of each switch transistor, the first end of the self-bias transistor is connected to the body region of the switch transistor, and the drain of the self-bias transistor is connected to the source of the x+1th switch transistor. The second end is connected to the gate of the switching transistor; a first resistor and a second resistor are also connected between the source and the drain of each switching transistor, the first end of the first resistor is connected to the source of the switching transistor, the second end of the first resistor is connected to the first end of the second resistor to form a source-drain connection node, and the second end of the second resistor is connected to the source of the switching transistor; a first voltage balancing network, the first voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the first voltage balancing network; the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor; the second end of the second branch is connected to the source-drain connection node of any one of the switching transistors from the second switching transistor to the 1+mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0242] It should be noted that the specific implementation methods and functions of the switching transistor, first resistor, second resistor, self-bias transistor, first branch and second branch included in the first RF switching circuit in this embodiment are the same as the specific implementation methods and functions of the switching transistor, first resistor, second resistor, self-bias transistor, first branch and second branch in the above embodiments, and no redundant description is given here.

[0243] In this embodiment, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor; the first voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the first voltage balancing network; the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor; the second end of the second branch is connected to the source-drain connection node of any one of the switching transistors from the second switching transistor to the 1+m switching transistors, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the linear performance of the tuner switch and the uneven voltage distribution of the switching transistors in the tuner switch can be improved to the greatest extent, thereby improving the reliability and stability of the tuner switch.

[0244] In at least one embodiment, if there are multiple first voltage balancing networks, the multiple first voltage balancing networks are sequentially arranged in a direction from the first port to the second port.

[0245] In at least one embodiment, a voltage balancing network is connected to the gate of each switching transistor of the first RF switching circuit, thereby maximally improving the linear performance of the first RF switching circuit and the uneven voltage division of the switching transistors in the first RF switching circuit, thereby improving the reliability and stability of the first RF switching circuit.

[0246] This embodiment further provides a radio frequency module, including an antenna tuning circuit, the antenna tuning circuit including a first radio frequency switch circuit, wherein a first port of the first radio frequency switch circuit is configured to be connected to an antenna port, and a second port of the first radio frequency switch circuit is configured to be grounded; the first radio frequency switch circuit includes K switch units connected in series between the first port and the second port, each switch unit including a switch transistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer less than K and greater than or equal to 1; each switch A self-bias transistor is connected between the gate and body region of the transistor, the first end of the self-bias transistor is connected to the body region of the switching transistor, and the second end of the self-bias transistor is connected to the gate of the switching transistor; a first voltage balancing network, the first voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the first voltage balancing network; the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor; the second end of the second branch is connected to the drain of any one of the third to mth switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

[0247] In this embodiment, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor; the first voltage balancing network includes a first branch and a second branch, the first end of the first branch and the first end of the second branch are connected to the gate connection end of the first voltage balancing network; the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor; the second end of the second branch is connected to the drain of any one of the switching transistors from the third switching transistor to the mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; thereby, when some switching transistors are connected to the voltage balancing network, the linear performance of the tuner switch and the uneven voltage distribution of the switching transistors in the tuner switch can be improved to the greatest extent, thereby improving the reliability and stability of the tuner switch.

[0248] This embodiment further provides an electronic device, including the radio frequency switch circuit in the above embodiment, or including the radio frequency module in the above embodiment.

[0249] The foregoing description is intended only to provide specific embodiments of the present invention, which will enable those skilled in the art to understand and implement the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not intended to be limited to the embodiments shown herein, but is intended to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A radio frequency switching circuit, characterized in that: include: a first port, a second port, and K switch units sequentially connected in series between the first port and the second port, each switch unit comprising a switch transistor, a first resistor, and a second resistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K; The first resistor and the second resistor of each switching unit are connected between the source and the drain of the switching transistor, the first end of the first resistor is connected to the source of the switching transistor, the second end of the first resistor is connected to the first end of the second resistor to form a source-drain connection node of the switching transistor, and the second end of the second resistor is connected to the drain of the switching transistor; At least one voltage balancing network, wherein a body region connection terminal of one voltage balancing network is connected to a body region of one of the switching transistors, and different voltage balancing networks are connected to body regions of different switching transistors; The voltage balancing network includes a first branch and a second branch, wherein a first end of the first branch and a first end of the second branch are connected to a body connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are both integers greater than or equal to 1; The body region connection terminal of the voltage balancing network is connected to the body region of the i-th switching transistor, wherein: When the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the source-drain connection node of any one of the (i+1)th to (i+m)th switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; When the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the (i-1)th to (in)th switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the (i+1)th to (i+m)th switching transistors; When the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th switching transistor to the inth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

2. A radio frequency switching circuit, characterized in that: include: a first port, a second port, and K switch units sequentially connected in series between the first port and the second port, each switch unit comprising a switch transistor, a source of the first switch transistor being connected to the first port, a drain of the Kth switch transistor being connected to the second port, and a drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K; At least one voltage balancing network, wherein a body region connection terminal of one voltage balancing network is connected to a body region of one of the switching transistors, and different voltage balancing networks are connected to body regions of different switching transistors; The voltage balancing network includes a first branch and a second branch, wherein a first end of the first branch and a first end of the second branch are connected to a body connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are both integers greater than or equal to 1; The body region connection terminal of the voltage balancing network is connected to the body region of the i-th switch unit, wherein: When the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the drain of any one of the (i+2)th to (i+m-1)th switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; When the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source of any one of the (i-2)th to (i-n+1)th switching transistors, and the second end of the second branch is connected to the drain of any one of the (i+2)th to (i+m-1)th switching transistors; When the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source of any one of the i-2th switching transistor to the i-n+1th switching transistor, and the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

3. A radio frequency switching circuit, characterized in that: include: a first port, a second port, and K switch units sequentially connected in series between the first port and the second port, each switch unit comprising a switch transistor, a first resistor, a second resistor, and a self-bias transistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K; The first resistor and the second resistor of each switching unit are connected between the source and the drain of the switching transistor, the first end of the first resistor is connected to the source of the switching transistor, the second end of the first resistor is connected to the first end of the second resistor to form a source-drain connection node of the switching transistor, and the second end of the second resistor is connected to the drain of the switching transistor; The self-bias transistor of each switching unit is connected between the gate and the body region of the switching transistor; At least one voltage balancing network, wherein a gate connection terminal of one voltage balancing network is connected to the gate of one switching transistor, and different voltage balancing networks are connected to the gates of different switching transistors; The voltage balancing network includes a first branch and a second branch, wherein a first end of the first branch and a first end of the second branch are connected to a gate connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are both integers greater than or equal to 1; The gate connection terminal of the voltage balancing network is connected to the gate of the i-th switching unit, wherein: When the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the source-drain connection node of any one of the (i+1)th to (i+m)th switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; When the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source-drain connection node of any one of the (i-1)th to (in)th switching transistors, and the second end of the second branch is connected to the source-drain connection node of any one of the (i+1)th to (i+m)th switching transistors; When the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source-drain connection node of any one of the i-1th switching transistor to the inth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

4. A radio frequency switching circuit, characterized in that: include: a first port, a second port, and K switch units sequentially connected in series between the first port and the second port, each switch unit comprising a switch transistor and a self-bias transistor, the source of the first switch transistor being connected to the first port, the drain of the Kth switch transistor being connected to the second port, and the drain of the xth switch transistor being connected to the source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer greater than or equal to 1 and less than K; The self-bias transistor of each switching unit is connected between the gate and the body region of the switching transistor; At least one voltage balancing network, wherein a gate connection terminal of one voltage balancing network is connected to the gate of one switching transistor, and different voltage balancing networks are connected to the gates of different switching transistors; The voltage balancing network includes a first branch and a second branch, wherein a first end of the first branch and a first end of the second branch are connected to a gate connection end of the voltage balancing network, the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are both greater than or equal to 1; The gate connection terminal of the voltage balancing network is connected to the gate of the i-th switching unit, wherein: When the voltage balancing network is connected to the first switching transistor, or when the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than or equal to i, the second end of the second branch is connected to the drain of any one of the (i+2)th to (i+m-1)th switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; When the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, and n is greater than 1 and less than i, the second end of the first branch is connected to the source of any one of the (i-2)th to (i-n+1)th switching transistors, and the second end of the second branch is connected to the drain of any one of the (i+2)th to (i+m-1)th switching transistors; When the voltage balancing network is connected to the Kth switching transistor, the second end of the first branch is connected to the source of any one of the i-2th switching transistor to the i-n+1th switching transistor, and the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

5. The radio frequency switching circuit according to any one of claims 1 or 2, characterized in that: The first port is configured to be connected to a first signal transmission port, and the second port is configured to be grounded; the number of the voltage balancing networks is N, and the N voltage balancing networks are arranged sequentially in the direction from the first port to the second port; wherein, the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, and the body region connection end of the Nth voltage balancing network is connected to the body region of the Nth switching transistor; wherein, N is an integer greater than 1 and less than or equal to K.

6. The radio frequency switching circuit according to claim 1, wherein: The first port is configured as a first signal transmission port connection, the second port is configured as grounded, the at least one voltage balancing network includes a first voltage balancing network, the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the i+1th switching transistor to the i+mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

7. The radio frequency switching circuit according to claim 2, wherein: The first port is configured as a first signal transmission port connection, the second port is configured to be grounded, the at least one voltage balancing network includes a first voltage balancing network, the body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the switching transistors from the i+2th switching transistor to the i+m-1th switching transistor, the second end of the first branch in the first voltage balancing network is connected to the second end of the second branch or the second end of the first branch is left floating.

8. The radio frequency switch circuit according to any one of claims 3 or 4, characterized in that: The first port is configured to be connected to a first signal transmission port, and the second port is configured to be grounded; the number of the voltage balancing networks is N, and the N voltage balancing networks are arranged in sequence in the direction from the first port to the second port; wherein, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, and the gate connection end of the Nth voltage balancing network is connected to the gate of the Nth switching transistor, wherein N is an integer greater than 1 and less than or equal to K.

9. The radio frequency switching circuit according to claim 1, wherein: The first port is configured as a first signal transmission port connection, the second port is configured to be grounded, the at least one voltage balancing network includes a first voltage balancing network, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the i+1th switching transistor to the i+mth switching transistor, the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

10. The radio frequency switching circuit according to claim 2, wherein: The first port is configured as a first signal transmission port connection, the second port is configured to be grounded, the at least one voltage balancing network includes a first voltage balancing network, the gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the switching transistors from the i+2th switching transistor to the i+m-1th switching transistor, the second end of the first branch in the first voltage balancing network is connected to the second end of the second branch or the second end of the first branch is left floating.

11. The radio frequency switch circuit according to any one of claims 1 or 2, characterized in that: The first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port; The number of the voltage balancing networks is M, and the M voltage balancing networks include P first voltage balancing units and Q second voltage balancing units, wherein M is an integer greater than or equal to 2, and P and Q are integers greater than or equal to 1 and less than M; P first voltage balancing units are sequentially arranged in a direction from the first port to the second port; wherein the body region connection end of the first first voltage balancing unit is connected to the body region of the first switching transistor, and the body region connection end of the Pth first voltage balancing unit is connected to the body region of the Pth switching transistor; Q second-level voltage balancing units are arranged in sequence in the direction from the second port to the first port; wherein the body region connection end of the first-level voltage balancing network is connected to the body region of the K-th switching transistor, and the body region connection end of the Q-th second-level voltage balancing unit is connected to the body region of the KQ-th switching transistor.

12. The radio frequency switching circuit according to claim 1, wherein: The first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port; At least one voltage balancing network includes a first voltage balancing network and a second voltage balancing network; The body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the second switching transistor to the 1+mth switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; The body region connection end of the second voltage balancing network is connected to the body region of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the K-1th switching transistor to the Knth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

13. The radio frequency switch circuit according to claim 2, wherein: The first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port; At least one voltage balancing network includes a first voltage balancing network and a second voltage balancing network; The body region connection end of the first voltage balancing network is connected to the body region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the third switching transistor to the mth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; The body region connection end of the second voltage balancing network is connected to the body region of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source of any one of the switching transistors from the K-2th switching transistor to the K-n+1th switching transistor, and the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

14. The radio frequency switch circuit according to any one of claims 3 or 4, characterized in that: The first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port; The number of the voltage balancing networks is M, and the M voltage balancing networks include P first voltage balancing units and Q second voltage balancing units, wherein M is an integer greater than or equal to 2, and P and Q are integers greater than or equal to 1 and less than M; P first balancing units are sequentially arranged in a direction from the first port to the second port; wherein the gate connection end of the first first balancing unit is connected to the gate of the first switching transistor, and the gate connection end of the Pth first balancing unit is connected to the gate of the Pth switching transistor; Q second balancing units are arranged in sequence in the direction from the second port to the first port; wherein the gate connection end of the first balancing network is connected to the gate of the Kth switching transistor, and the gate connection end of the Qth second balancing unit is connected to the gate of the KQth switching transistor.

15. The radio frequency switch circuit according to claim 3, wherein: The first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port; At least one voltage balancing network includes a first voltage balancing network and a second voltage balancing network; The gate connection end of the first voltage balancing network is connected to the gate of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the source-drain connection node of any one of the second switching transistor to the 1+mth switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; The gate connection end of the second voltage balancing network is connected to the gate of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source-drain connection node of any one of the switching transistors from the K-1th switching transistor to the Knth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

16. The radio frequency switch circuit according to claim 4, wherein: The first port is configured to be connected to a first signal transmission port, and the second port is configured to be connected to a second signal transmission port; At least one voltage balancing network includes a first voltage balancing network and a second voltage balancing network; The gate connection end of the first voltage balancing network is connected to the gate region of the first switching transistor, the second end of the second branch in the first voltage balancing network is connected to the drain of any one of the third switching transistor to the mth switching transistor, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating; The gate connection end of the second voltage balancing network is connected to the gate of the Kth switching transistor, the second end of the first branch in the second voltage balancing network is connected to the source of any one of the switching transistors from the K-2th switching transistor to the K-n+1th switching transistor, and the second end of the second branch is connected to the second end of the first branch or the second end of the second branch is left floating.

17. The radio frequency switch circuit according to any one of claims 1 to 4, characterized in that: Each of the switch units further includes a body bias resistor, a first end of the body bias resistor being connected to the body region of the switch transistor, and a second end of the body bias resistor being configured to be connected to a body bias voltage terminal.

18. The radio frequency switch circuit according to any one of claims 1 to 4, characterized in that: The number of the switch units is the same as the number of the voltage balancing networks, and each of the switch transistors is correspondingly connected to one voltage balancing network.

19. The radio frequency switch circuit according to any one of claims 1 to 4, characterized in that: The first transistor is a first diode, the first end of the first branch is configured to be connected to the anode of the first diode (1), the second end of the first branch is configured to be connected to the cathode of the nth first diode, the cathode of the jth first diode is connected to the anode of the j+1th first diode, where j is an integer less than n and greater than or equal to 1; the second transistor is a second diode, the first end of the second branch is configured to be connected to the anode of the second diode (1), the second end of the second branch is configured to be connected to the cathode of the mth second diode, the cathode of the zth second diode is connected to the anode of the z+1th first diode, where z is an integer less than m and greater than or equal to 1; Alternatively, the first transistor is a first field-effect transistor, the source of each of the first field-effect transistors is connected to the corresponding gate, the first end of the first branch is configured to be connected to the source of the 1st first field-effect transistor, the second end of the first branch is configured to be connected to the drain of the nth first field-effect transistor, the drain of the jth first field-effect transistor is connected to the source of the j+1th first field-effect transistor, and j is an integer less than m and greater than or equal to 1; the second transistor is a second field-effect transistor, the source of each of the second field-effect transistors is connected to the corresponding gate, the first end of the second branch is configured to be connected to the source of the 1st second field-effect transistor, the second end of the second branch is configured to be connected to the drain of the mth second field-effect transistor, the drain of the zth second field-effect transistor is connected to the source of the z+1th second field-effect transistor, and z is an integer less than m and greater than or equal to 1.

20. The radio frequency switch circuit according to any one of claims 1 or 3, characterized in that: When the voltage balancing network is connected to at least any one of the 2nd to K-1th switching transistors, the second end of the first branch of the voltage balancing network is connected to the source-drain connection node of the i-2 / nth switching transistor; the second end of the second branch of the voltage balancing network is connected to the source-drain connection node of the i+2 / mth switching transistor, wherein n and m are both even numbers.

21. The radio frequency switch circuit according to any one of claims 2 or 4, characterized in that: When the voltage balancing network is connected to at least any one of the second to K-1th switching transistors, the second end of the first branch is connected to the The source of the switching transistor; the second end of the second branch is connected to the The drain of the switching transistor, wherein both n and m are odd numbers.

22. The radio frequency switch circuit according to any one of claims 1 or 3, characterized in that: The resistance values ​​of the first resistor and the second resistor are in the range of [5K ohm, 15K ohm].

23. The radio frequency switch circuit according to any one of claims 1 to 4, characterized in that: The number n of the first transistors is the same as the number m of the second transistors.

24. The radio frequency switch circuit according to any one of claims 1 to 4, characterized in that: The number n of the first transistors is greater than or equal to 4, and the number m of the second transistors is greater than or equal to 4.

25. The radio frequency switch circuit according to any one of claims 3 to 4, characterized in that: The total on-state voltage of the n first transistors connected in series in the first branch is greater than or equal to the gate voltage of the switching transistor; The total on-state voltage of the m second transistors connected in series in sequence on the second branch is greater than or equal to the gate voltage of the switching transistor.

26. The radio frequency switch circuit according to claim 3 or 4, characterized in that: The self-biasing transistor includes a self-biasing diode, an anode of the self-biasing diode is connected to a body region of the corresponding switching transistor, and a cathode of the self-biasing diode is connected to a gate of the corresponding switching transistor.

27. The radio frequency switch circuit according to any one of claims 11 to 14, characterized in that: The first signal transmission port is configured to be connected to an antenna port, and the second signal transmission port is configured to be connected to a filter; Alternatively, the first signal transmission port is configured to be connected to a filter, and the second signal transmission port is configured to be connected to an amplifier.

28. A radio frequency module, characterized in that: The antenna tuning circuit includes an antenna tuning circuit, wherein the antenna tuning circuit includes a first radio frequency switch circuit, wherein a first port of the first radio frequency switch circuit is configured to be connected to an antenna port, and a second port of the first radio frequency switch circuit is configured to be grounded; the first radio frequency switch circuit includes K switch units sequentially connected in series between the first port and the second port, each switch unit including a switch transistor, wherein a source of the first switch transistor is connected to the first port, a drain of the Kth switch transistor is connected to the second port, and a drain of the xth switch transistor is connected to a source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer less than K and greater than or equal to 1; A first resistor and a second resistor are further connected between the source and the drain of each switching transistor, wherein a first end of the first resistor is connected to the source of the switching transistor, a second end of the first resistor is connected to a first end of the second resistor to form a source-drain connection node, and a second end of the second resistor is connected to the source of the switching transistor; a first voltage balancing network, wherein a body region connection terminal of the first voltage balancing network is connected to a body region of the first switching transistor; The first voltage balancing network includes a first branch and a second branch, wherein a first end of the first branch and a first end of the second branch are connected to a body connection terminal of the first voltage balancing network; the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are both integers greater than or equal to 3; The second end of the second branch is connected to the source-drain connection node of any one of the second to 1+m switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

29. A radio frequency module, characterized in that: The antenna tuning circuit includes an antenna tuning circuit, wherein the antenna tuning circuit includes a first radio frequency switch circuit, wherein a first port of the first radio frequency switch circuit is configured to be connected to an antenna port, and a second port of the first radio frequency switch circuit is configured to be grounded; the first radio frequency switch circuit includes K switch units sequentially connected in series between the first port and the second port, each switch unit including a switch transistor, wherein a source of the first switch transistor is connected to the first port, a drain of the Kth switch transistor is connected to the second port, and a drain of the xth switch transistor is connected to a source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer less than K and greater than or equal to 1; a first voltage balancing network, wherein a body region connection terminal of the first voltage balancing network is connected to a body region of the first switching transistor; The first voltage balancing network includes a first branch and a second branch, wherein a first end of the first branch and a first end of the second branch are connected to a body connection terminal of the first voltage balancing network; the first branch includes n first transistors connected in series between the first end and the second end of the first branch, and the second branch includes m second transistors connected in series between the first end and the second end of the second branch, where n and m are both integers greater than or equal to 3; The second end of the second branch is connected to the drain of any one of the third to mth switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

30. A radio frequency module, characterized in that: The antenna tuning circuit includes an antenna tuning circuit, wherein the antenna tuning circuit includes a first radio frequency switch circuit, wherein a first port of the first radio frequency switch circuit is configured to be connected to an antenna port, and a second port of the first radio frequency switch circuit is configured to be grounded; the first radio frequency switch circuit includes K switch units sequentially connected in series between the first port and the second port, each switch unit including a switch transistor, wherein a source of the first switch transistor is connected to the first port, a drain of the Kth switch transistor is connected to the second port, and a drain of the xth switch transistor is connected to a source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer less than K and greater than or equal to 1; A self-bias transistor is connected between the gate and the body region of each switching transistor, wherein a first terminal of the self-bias transistor is connected to the body region of the switching transistor, and a second terminal of the self-bias transistor is connected to the gate of the switching transistor; A first resistor and a second resistor are further connected between the source and the drain of each switching transistor, wherein a first end of the first resistor is connected to the source of the switching transistor, a second end of the first resistor is connected to a first end of the second resistor to form a source-drain connection node, and a second end of the second resistor is connected to the source of the switching transistor; A first voltage balancing network, the first voltage balancing network comprising a first branch and a second branch, a first end of the first branch and a first end of the second branch being connected to a gate connection terminal of the first voltage balancing network; The gate connection terminal of the first voltage balancing network is connected to the gate of the first switching transistor; The second end of the second branch is connected to the source-drain connection node of any one of the second to 1+m switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

31. A radio frequency module, characterized in that: The antenna tuning circuit includes an antenna tuning circuit, wherein the antenna tuning circuit includes a first radio frequency switch circuit, wherein a first port of the first radio frequency switch circuit is configured to be connected to an antenna port, and a second port of the first radio frequency switch circuit is configured to be grounded; the first radio frequency switch circuit includes K switch units sequentially connected in series between the first port and the second port, each switch unit including a switch transistor, wherein a source of the first switch transistor is connected to the first port, a drain of the Kth switch transistor is connected to the second port, and a drain of the xth switch transistor is connected to a source of the x+1th switch transistor, wherein K is an integer greater than 1, and x is an integer less than K and greater than or equal to 1; A self-bias transistor is connected between the gate and the body region of each switching transistor, wherein a first terminal of the self-bias transistor is connected to the body region of the switching transistor, and a second terminal of the self-bias transistor is connected to the gate of the switching transistor; A first voltage balancing network, the first voltage balancing network comprising a first branch and a second branch, a first end of the first branch and a first end of the second branch being connected to a gate connection terminal of the first voltage balancing network; The gate connection terminal of the first voltage balancing network is connected to the gate of the first switching transistor; The second end of the second branch is connected to the drain of any one of the third to mth switching transistors, and the second end of the first branch is connected to the second end of the second branch or the second end of the first branch is left floating.

32. An electronic device, characterized in that: Includes the radio frequency switching circuit as described in any one of claims 1-27, or includes the radio frequency module as described in any one of claims 28-31.

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