Infrared scene generation chip and preparation method thereof, and infrared scene generation device
By using an infrared scene generation chip with a silicon carbide substrate and a pixel array, the problems of poor heat dissipation and stability of the substrate are solved, a transmissive optical path is realized, costs are reduced, and the optical system is simplified.
Patent Information
- Application Number
- CN202510273591.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-07
- Publication Date
- 2025-09-05
AI Technical Summary
The substrate of existing infrared scene generation chips has poor heat dissipation, high cost and poor stability, and it is difficult to implement a transmissive optical path, which leads to increased complexity and volume of the optical system.
A silicon carbide substrate is used as the substrate of the infrared scene generation chip, combined with a pixel array, including a heat insulation layer, a light absorption layer and a support layer, to achieve light-to-heat conversion, which is suitable for both transmissive and reflective optical paths.
The thermal conductivity and stability of the infrared scene generation chip are improved, the cost is reduced, and the complexity and volume of the optical system are reduced.
Smart Images
Figure CN120603342A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of infrared scene simulation technology, and in particular to an infrared scene generation chip and a preparation method thereof, and an infrared scene generation device. Background Art
[0002] Infrared scene generation devices are primarily used in infrared imaging hardware-in-the-loop simulation technology, providing a real-time infrared image source for infrared detection systems and verifying their ability to detect, identify, and track targets. These devices typically include infrared scene generation chips, which can be optically driven to convert visible light energy into infrared radiation energy to generate infrared images or videos.
[0003] In the related art, infrared scene generation chips usually use visible light high-transmittance substrates. Commonly used visible light high-transmittance substrates can include glass, quartz, diamond and thin film materials. However, the above-mentioned visible light high-transmittance substrates have problems such as poor heat dissipation, high cost and poor stability. In addition, most visible light high-transmittance substrates have poor transmittance for infrared light, which makes it difficult for the chip to realize a transmissive light path. Therefore, it mainly adopts a reflective light path. The transmissive light path design is relatively simple and can effectively reduce the complexity and volume of the light path. However, the reflective light path requires the addition of multiple optical lens groups, which increases the complexity and volume of the optical system. Summary of the Invention
[0004] The present application provides an infrared scene generation chip and a preparation method thereof, as well as an infrared scene generation device, which adopts a silicon carbide substrate to solve the problems of poor heat dissipation, high cost and poor mechanical stability of the substrate currently used in infrared scene generation chips. At the same time, it can also realize a transmissive optical path, which helps to reduce the complexity and volume of the optical system.
[0005] In a first aspect, the present application provides an infrared scene generation chip for an infrared scene generation device, wherein the infrared scene generation device has an infrared window and a visible light window, and the infrared scene generation chip includes: a substrate and a pixel array, wherein the substrate is a silicon carbide substrate, and the substrate is arranged opposite to the infrared window, and the pixel array is arranged on the side of the substrate facing the visible light window. The infrared scene generation chip is constructed to convert visible light incident from the visible light window into infrared light, and the infrared light is suitable for being emitted from the infrared window.
[0006] In some embodiments, the pixel array includes: a heat insulation layer and a light absorption layer, the light absorption layer and the substrate are respectively located on both sides of the heat insulation layer, and the light absorption layer is arranged opposite to the visible light window.
[0007] In some embodiments, the light absorbing layer is at least one of a metallic black material, a carbon-based material, a light trapping structure, and a superstructure.
[0008] In some embodiments, the duty cycle of the pixel pattern is not less than 40%.
[0009] In some embodiments, the pixel array further includes: a support layer, wherein the support layer is located between the thermal insulation layer and the substrate.
[0010] In some embodiments, the support layer is composed of a micro-nano structure, and the micro-nano structure includes at least one of a microcavity, a microbridge, a micropillar, and a microgroove.
[0011] In some embodiments, the thickness of the support layer is not less than 1 μm.
[0012] In some embodiments, the substrate constitutes a supporting layer for the pixel array.
[0013] In a second aspect, the present application provides an infrared scene generation device, comprising: a cavity having a hollow accommodating cavity, the cavity including a visible light window and an infrared window for transmitting light; the above-mentioned infrared scene generation chip is arranged in the accommodating cavity, the substrate is arranged opposite to the infrared window, the pixel array is arranged on the side of the substrate facing the visible light window, and the infrared scene generation chip is constructed to convert visible light incident from the visible light window into infrared light, and the infrared light is suitable for being emitted from the infrared window.
[0014] In some embodiments, the receiving chamber is a vacuum chamber.
[0015] In some embodiments, the infrared scene generation device is configured such that when a transmissive optical path is adopted, the visible light window and the infrared window are respectively located on opposite sides of the infrared scene generation chip.
[0016] In some embodiments, the infrared scene generating device is configured such that when a reflective optical path is adopted, the visible light window and the infrared window are a common window.
[0017] In some embodiments, the average transmittance of visible light of the visible light window is greater than 90%; and / or the average transmittance of light in the 8μm-14μm band of the infrared window is greater than 80%.
[0018] In a third aspect, the present application provides an infrared scene generation device, comprising the above-mentioned infrared scene generation device.
[0019] In a fourth aspect, the present application provides a vehicle comprising the above-mentioned infrared scene generating device or the above-mentioned infrared scene generating component.
[0020] In a fifth aspect, the present application provides a method for preparing an infrared scene generation chip, comprising the following steps:
[0021] preparing a heat insulation layer on a substrate, wherein the substrate is a silicon carbide substrate;
[0022] preparing a light absorbing layer on the heat-insulating layer;
[0023] preparing a mask layer on the light absorbing layer, and performing ultraviolet exposure and development on the mask layer to obtain a pixel pattern;
[0024] Etching the light absorbing layer and the heat insulating layer using a mask layer so that the light absorbing layer and the heat insulating layer obtain the same pixel pattern as that of the mask layer;
[0025] etching the substrate using a mask layer;
[0026] Remove the mask layer and complete chip preparation.
[0027] In some embodiments, before preparing the thermal insulation layer on the substrate, the method further comprises:
[0028] A supporting layer is prepared on the substrate.
[0029] The present application provides an infrared scene generation chip, a preparation method thereof, and an infrared scene generation device. The infrared scene generation chip includes a substrate and a pixel array, wherein the substrate is a silicon carbide substrate, the substrate is arranged opposite to the infrared window, and the pixel array is arranged on the side of the substrate facing the visible light window. Visible light is irradiated onto the pixel array through the visible light window, and the pixel array radiates infrared light outward after photothermal conversion. In this way, by setting up a silicon carbide substrate, since the silicon carbide substrate has a high transmittance for infrared light, the infrared scene generation chip is more suitable for a transmission-type infrared scene generation device, and the thermal conductivity and stability of the infrared scene generation chip are improved, thereby reducing the cost. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0031] Figure 1 Schematic diagram of the structure of the infrared scene generation device provided in the embodiment of the present application Figure 1 ;
[0032] Figure 2 Schematic diagram of the structure of the infrared scene generation device provided in the embodiment of the present application Figure 2 ;
[0033] Figure 3 Preparation process of the infrared scene generation chip provided in the embodiment of this application Figure 1 ;
[0034] Figure 4 Preparation process of the infrared scene generation chip provided in the embodiment of this application Figure 2 ;
[0035] Figure 5 This is a test chart of the infrared band transmittance of the substrate provided in the embodiment of the present application;
[0036] Figure 6 A schematic flow chart of a method for preparing an infrared scene generation device provided in an embodiment of the present application.
[0037] Description of reference numerals:
[0038] 10-Infrared scene generation device;
[0039] 100-cavity;
[0040] 110 - accommodating cavity; 111 - visible light window; 112 - infrared window;
[0041] 200-infrared scene generation chip;
[0042] 210-base;
[0043] 220 - pixel array; 221 - thermal insulation layer; 222 - light absorption layer; 223 - support layer;
[0044] 300-mask layer. DETAILED DESCRIPTION
[0045] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present application more obvious and easy to understand, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.
[0046] In the related art, infrared scene generation chips typically use a highly visible light-transmitting substrate. Commonly used substrates include glass, quartz, diamond, and thin film materials. However, these substrates have poor infrared transmittance and suffer from issues such as poor heat dissipation, high cost, and poor stability.
[0047] In view of this, the present application provides an infrared scene generation chip, a preparation method thereof, and an infrared scene generation device. The substrate of the infrared scene generation chip is a silicon carbide substrate, which is arranged opposite to an infrared window. The pixel array is arranged on the side of the substrate facing the visible light window. Visible light is irradiated onto the pixel array through the visible light window. The pixel array radiates infrared light outward through photothermal conversion. In this way, the infrared scene generation chip converts visible light into infrared light, and the infrared light is radiated outward through the infrared window. By providing a silicon carbide substrate, since the silicon carbide substrate has a high transmittance for infrared light, the infrared scene generation chip 200 is more suitable for a transmissive infrared scene generation device, and the thermal conductivity and stability of the infrared scene generation chip are improved, thereby reducing costs.
[0048] The present application will be described in detail below with reference to the accompanying drawings and specific embodiments.
[0049] See also Figures 1 to 5 The infrared scene generating device 10 according to the embodiment of the present application may include a cavity 100 and an infrared scene generating chip 200 .
[0050] The cavity 100 has a hollow accommodating cavity 110 , and the accommodating cavity 110 includes a visible light window 111 and an infrared window 112 for transmitting light.
[0051] The infrared scene generation chip 200 is arranged in the accommodating cavity 110, wherein visible light can enter the accommodating cavity 110 through the visible light window 111 and reach the infrared scene generation chip 200, and the infrared light converted by the infrared scene generation chip 200 can pass through the infrared window 112.
[0052] The infrared scene generation chip 200 may include a substrate 210 and a pixel array 220. The substrate 210 is a silicon carbide substrate, such as Figure 5 As shown, the silicon carbide substrate in this embodiment has a high transmittance (close to 100%) for light in the wavelength range of 0-20 μm. Therefore, the infrared light converted and generated by the pixel array 220 can well penetrate the silicon carbide substrate.
[0053] The substrate 210 is arranged opposite to the infrared window 112, and the pixel array 220 is provided on the side of the substrate 210 facing the visible light window 111. The infrared scene generation chip 200 is constructed to convert the visible light incident from the visible light window 111 into infrared light, which is suitable for being emitted from the infrared window 112.
[0054] In a specific implementation, the cavity 100 is provided with a receiving chamber 110 to provide a stable operating environment for internal components (such as the infrared scene generation chip 200). The cavity 100 may also be provided with a visible light window 111 and an infrared window 112. The visible light window 111 is used to ensure that visible light can effectively penetrate into the cavity 100; the infrared window 112 is used to ensure that the converted infrared light can be smoothly emitted from the cavity 100.
[0055] Among them, the infrared scene generation chip 200 can be fixedly arranged in the accommodating cavity 110 of the cavity 100 by a clamp. The infrared scene generation chip 200 may include a substrate 210. The substrate 210 may be a silicon carbide substrate, which is transparent to the infrared band and has a high transmittance. When the cavity 100 is a light path transmission cavity, the infrared scene generation device 10 provided in this embodiment can be used to realize a transmission light path, which can effectively reduce the complexity of the light path and the volume of the device compared to a reflective infrared scene generation device. In addition, the infrared scene generation chip 200 can be prepared by a micro-electro-mechanical systems (MEMS) process, so that the photolithography process is small and the controllability is high.
[0056] Silicon carbide (SiC) has good thermal conductivity, with a thermal conductivity of 120W / (m·K)-490W / (m·K). Compared with substrates made of glass and quartz, silicon carbide substrates can achieve better heat dissipation function and can meet the high frame rate application of infrared imaging. Silicon carbide has a high hardness. Using silicon carbide as the substrate 210 of the infrared scene generation chip 200 can improve the wear resistance and scratch resistance of the infrared scene generation chip 200. In turn, the durability and robustness of the infrared scene generation chip 200 are improved. In addition, compared with substrates made of diamond, silicon carbide substrates have lower costs and better economic applicability. Moreover, compared with substrates made of thin film materials, silicon carbide substrates have good oxidation resistance and corrosion resistance, more stable chemical properties, and better mechanical stability.
[0057] Furthermore, a pixel array 220 is provided on the side of the substrate 210 facing the visible light window 111. The pixel array 220 efficiently receives visible light incident from the visible light window 111 and converts the visible light into infrared light through photothermal conversion, enabling the converted infrared light to simulate or reproduce a specific infrared scene. Photothermal conversion refers to the absorption and conversion of visible light into heat energy when it strikes the pixel array 220. The heated pixel array 220 then emits this energy as infrared radiation, generating infrared light.
[0058] See also Figure 1The infrared scene generation chip based on a silicon carbide substrate operates in a transmissive optical path. The silicon carbide substrate is arranged opposite the infrared window 112, and the pixel array 220 is arranged on the side of the substrate 210 facing the visible light window 111. Visible light passes through the visible light window 111 and strikes the pixel array 220. The pixel array 220 then radiates infrared light through photothermal conversion. In this way, the infrared scene generation chip 200 converts visible light into infrared light, which is then radiated outward through the infrared window 112. The silicon carbide substrate improves the thermal conductivity and stability of the infrared scene generation chip 200, reduces costs, and reduces the complexity and size of the optical system.
[0059] The pixel array 220 includes a light absorbing layer 222, a heat insulating layer 221, and a support layer 223. The support layer 223 is a micro-nano structure located between the heat insulating layer 221 and the substrate 210. The light absorbing layer 222 is arranged opposite to the visible light window 111. The pixel array 220 herein refers to an array composed of multiple pixels.
[0060] It should be noted that the support layer 223 is configured as a micro-nano structure, so that the substrate 210 and the pixel array 220 can maintain a stable relative position when subjected to external stress or temperature changes, thereby avoiding performance degradation or failure caused by loose connections, and ensuring the firmness and stability of the connection between the substrate 210 and the pixel array 220.
[0061] It should be noted that the thermal insulation layer 221 is disposed between the light absorbing layer 222 and the substrate 210 to effectively isolate the light absorption process from interference from external heat sources, ensuring that the light absorbing layer 222 can operate in a relatively stable temperature environment, thereby improving the light conversion efficiency and stability. The thermal insulation layer 221 can be made of a material with a thermal conductivity of less than 50 W / (m·K).
[0062] Furthermore, the light absorbing layer 222 is positioned opposite the visible light window 111, enabling it to efficiently capture incident light. The light absorbing layer 222 can be made of a high-absorptivity material, enabling it to quickly and efficiently absorb light energy. Furthermore, the presence of the thermal insulation layer 221 effectively protects the light absorbing layer 222 even in conditions of significant ambient temperature fluctuations.
[0063] In some embodiments, the light absorbing layer 222 may be made of at least one of a metallic black material, a carbon-based material, a light trapping structure, and a superstructure.
[0064] The light absorbing layer 222 has an average absorption rate greater than 90% in the visible light band and an average emissivity greater than 80% in the infrared band of 8-14 μm.
[0065] It is understood that metallic black materials have low reflectivity and excellent light absorption properties, enabling efficient capture of visible light. By using metallic black materials, light scattering and reflection at the interface can be effectively reduced, allowing more light to penetrate the light absorbing layer 222 and be converted.
[0066] Furthermore, the carbon-based material can efficiently absorb visible light, so as to facilitate the photothermal conversion of the visible light by the pixel array 220 .
[0067] In addition, the light trapping structure can also enhance the performance of the light absorbing layer 222. The light trapping structure can effectively extend the propagation path of light inside the material, increase the interaction time between light and the material, and thus improve the light absorption efficiency.
[0068] In the light absorbing layer 222, the superstructure can achieve efficient absorption and conversion of light of specific wavelengths, thereby improving visible light conversion efficiency. Thus, the light absorbing layer 222 can be made of one or more of metallic black materials, carbon-based materials, light-trapping structures, and superstructures to improve light absorption efficiency, although this embodiment is not limited thereto.
[0069] In some embodiments, the duty cycle of the pixel pattern is not less than 40%. The pixel pattern herein refers to the pattern formed by the photosensitive area within a single pixel. That is, the duty cycle is the ratio of the area of the photosensitive area (effective working area) to the area of the pixel. In other words, the ratio of the area of the photosensitive area to the area of the pixel is not less than 40%.
[0070] To improve the efficiency of light signal capture and overall performance of pixel array 220, a high-thermal-resistance pixel pattern was fabricated using micro-nanofabrication techniques. The pixel pattern's duty cycle was set to no less than 40%. Duty cycle measures the ratio of the active working area to the total area of a pixel pattern.
[0071] It is understood that the duty cycle is not less than 40%, which means that at least 40% of the area is used for receiving, converting, or other effective functions of optical signals. This ensures that the surface area of the pixel array 220 is fully utilized, reducing optical signal loss or efficiency reduction caused by excessive non-functional area.
[0072] In addition, a higher duty cycle also helps improve the overall photosensitivity and response speed of the pixel array 220. Due to the increase in the effective working area, more photons can be captured and converted into heat energy, thereby speeding up the conversion and processing of visible light.
[0073] See also Figure 3 In some embodiments, the pixel array 220 includes a support layer 223 , which is located between the thermal insulation layer 221 and the substrate 210 .
[0074] The support layer 223 provides a support base for the thermal insulation layer 221. The support layer 223 has high rigidity and strength, effectively preventing the thermal insulation layer 221 from deformation or damage, thereby ensuring the structural stability of the pixel array 220.
[0075] The support layer 223 may be made of silicon or silicon oxide. Both silicon and silicon oxide have good thermal stability and chemical stability, thereby improving the reliability of the support layer 223 .
[0076] In some embodiments, the thickness of the support layer 223 is not less than 1 μm.
[0077] This arrangement ensures that support layer 223 has sufficient mechanical strength and stability. During use, pixel array 220 may be subject to external environmental influences such as pressure, vibration, or temperature fluctuations. A thicker support layer 223 can more effectively resist these adverse factors. Furthermore, support layer 223 can reduce heat loss or thermal coupling effects.
[0078] In some embodiments, the support layer 223 may be composed of micro-nanostructures, which may include at least one of microcavities, microbridges, micropillars, and microgrooves. These micro-nanostructures can effectively confine the light field, achieving a resonance enhancement effect for light of specific wavelengths, thereby improving the capture efficiency and conversion quality of visible light by the pixel array 220. Furthermore, these micro-nanostructures can also reduce light scattering losses to a certain extent, ensuring efficient propagation of converted infrared light.
[0079] See also Figure 4 In other embodiments, the substrate 210 can constitute the support layer 223 of the pixel array 220. That is, in this embodiment, the substrate 210 can be directly etched to remove excess material from the surface of the substrate 210 facing the pixel array 220 to form the support layer 223.
[0080] In a specific implementation, using substrate 210 as support layer 223 reduces the number of interfaces between layers. This helps reduce the risk of performance degradation due to interface mismatch or poor bonding, and improves the overall stability and reliability of pixel array 220. Furthermore, it helps reduce manufacturing costs and improve production efficiency.
[0081] Furthermore, the substrate 210 is configured as a silicon carbide substrate, which ensures that the substrate 210 can withstand temperature changes when supporting the thermal insulation layer 221 and the light absorption layer 222 , thereby maintaining the structural integrity and stability of the infrared scene generation chip 200 .
[0082] In some embodiments, the receiving chamber 110 is a vacuum chamber.
[0083] The vacuum chamber may be a light-transmitting vacuum chamber or a light-reflecting vacuum chamber, and this embodiment is not intended to limit this.
[0084] See also Figure 2 In some embodiments, the infrared scene generation chip based on the silicon carbide substrate can also work in a reflective optical path, that is, the visible light window 111 and the infrared window 112 are a common window, and the visible light is irradiated onto the pixel array 220 through the common window. The pixel array 220 radiates infrared light outward after photothermal conversion, and the infrared light continues to radiate outward through the common window.
[0085] In a specific implementation, the window can be made of a material with an average transmittance exceeding 80% for the visible light band and the 8-14 μm band. The light absorption layer 222 of the infrared scene generation chip 200 is positioned facing the window. Thus, when visible light passes through the window and strikes the infrared scene generation chip 200, the infrared scene generation chip 200 converts the visible light into infrared light through photothermal conversion. The infrared light is then radiated outward through the window, allowing the converted infrared light to simulate or reproduce a specific infrared scene. With this arrangement, the infrared scene generation device 10 can implement a reflective optical path, i.e., the infrared scene generation device 10 is a reflective infrared scene generation device.
[0086] To sum up, the infrared scene generation chip 200 in this embodiment uses silicon carbide material as the substrate 210. Since the silicon carbide substrate has good transmittance for infrared light, it can be used for both transmissive infrared scene generation devices and reflective infrared scene generation devices. Compared with the infrared scene generation chip in the related art that uses quartz, glass and other materials with high transmittance for visible light as the substrate, which is only suitable for reflective infrared scene generation devices, this embodiment can significantly improve the scope of application and applicable scenarios of the infrared scene generation chip 200, and has higher practicality.
[0087] In some embodiments, the average transmittance of visible light of the visible light window 111 is greater than 90%; and / or the average transmittance of light in the 8 μm-14 μm band of the infrared window 112 is greater than 80%.
[0088] Among them, the visible light window 111 can be made of a material with high transmittance, low absorption rate and low scattering rate, so that the average transmittance of visible light is greater than 90%. In this way, visible light can pass through the visible light window 111 unimpeded to illuminate the infrared scene generation chip 200.
[0089] Furthermore, the infrared window 112 can be made of a material with high transmittance, low absorption and good thermal stability so that the average transmittance of light in the 8μm-14μm band is greater than 80%. In this way, the converted 8μm-14μm band light can smoothly pass through the infrared window 112 and radiate outward.
[0090] On the basis of the above embodiments, an embodiment of the present application further provides an infrared scene generating device, including the infrared scene generating device 10 provided by any of the above embodiments.
[0091] It should be noted that the infrared scene generation device is used to simulate and generate infrared radiation scenes to facilitate performance testing of infrared detection systems, thermal imaging equipment, etc. in different environments and conditions. The infrared scene generation device 10 is used to provide a real-time infrared image source.
[0092] The infrared scene generating device 10 has been described in detail in the above embodiment and will not be described again here.
[0093] On the basis of the above embodiments, an embodiment of the present application further provides a vehicle, which includes the infrared scene generation device 10 of the above embodiments or the infrared scene generation chip 200 of the above embodiments.
[0094] The vehicle of this embodiment adopts the infrared scene generation device 10 of the above embodiment or the infrared scene generation chip 200 of the above embodiment, so that the vehicle can have functions such as pedestrian detection, obstacle detection, reversing image, and road condition recognition, which is conducive to improving the driving experience.
[0095] See also Figure 6 Based on the above embodiment, the present application also provides a method for preparing an infrared scene generation chip 200, comprising the following steps:
[0096] Step S101: preparing a heat insulation layer 221 on a substrate 210, where the substrate 210 is a silicon carbide substrate.
[0097] Among them, a silicon carbide wafer with a smooth and clean surface can be selected, cleaned and dried, and then rotated, sprayed, physically vapor deposited, and chemically vapor deposited on the silicon carbide wafer to prepare the thermal insulation layer 221.
[0098] Specifically, the thermal insulation layer 221 can be polyimide. Take 2 ml of polyimide solution and add it dropwise to the center of the silicon carbide wafer. Set the speed of the glue machine: pre-spin coating at 800 rpm for 1 minute. Then set the speed to 6000 rpm for 3 minutes. After the spin coating is completed, the polyimide is baked and cured to finally obtain a layer of polyimide film with a thickness of less than 1 μm.
[0099] Step S102 : preparing a light absorbing layer 222 on the heat insulating layer 221 .
[0100] Furthermore, a light absorbing layer 222 is prepared on the heat insulating layer 221 by spinning, spraying, physical vapor deposition and chemical vapor deposition.
[0101] Specifically, the light absorption layer 222 can be made of chromium black material, and a chromium target with a purity of 99.99% is selected. The RF power is set to 100W~200W, the argon flow rate is 30sccm~60sccm, the gas pressure in the cavity is 10Pa~30Pa, and the thickness of the sputtered chromium black layer is 2μm~4μm. In this way, the light absorption layer 222 is formed.
[0102] Step S103: preparing a mask layer 300 on the light absorbing layer 222, and performing ultraviolet exposure and development on the mask layer 300 to obtain a pixel pattern.
[0103] 2ml of photoresist solution was dripped onto the center of the silicon carbide wafer. The spin coater speed was set to 800 rpm for 1 minute, followed by 4000 rpm for 3 minutes. After spin coating, the photoresist was baked at 100°C and cured at 300°C to obtain a mask layer 300 with a thickness greater than 2μm.
[0104] The mask layer 300 is then subjected to UV exposure and development. Specifically, a mask with a pixel pattern is used. The exposure and development times are determined by the light intensity of the UV lithography machine and the exposure dose of the photoresist, but are not limited to these times in this embodiment. The pixel pattern and size after exposure and development remain consistent with those on the mask.
[0105] Step S104 : using the mask layer 300 to etch the light absorbing layer 222 and the heat insulating layer 221 , so that the light absorbing layer 222 and the heat insulating layer 221 obtain the same pixel pattern as that of the mask layer 300 .
[0106] The etching may be performed by wet etching or dry etching.
[0107] Specifically, the light absorbing layer 222 is etched using a chromium etching solution, and the etching time is determined by the concentration and ratio of the chromium etching solution. When the pixel pattern of the light absorbing layer 222 is substantially consistent with the pixel pattern on the mask layer 300, the wet etching is stopped, and the light absorbing layer 222 is rinsed and dried. The mask layer 300 is used to dry-etch the thermal insulation layer 221. A reactive ion etcher is used to etch the thermal insulation layer 221. The etching gases can be sulfur hexafluoride and oxygen. The chamber pressure can be set to 10 Pa, and the RF power can be set to 150-200 W. The etching time is determined by the thickness of the thermal insulation layer 221. When the pixel pattern of the thermal insulation layer 221 is substantially consistent with the pixel pattern on the mask layer 300, the etching is stopped.
[0108] Step S105 : etching the substrate 210 using the mask layer 300 .
[0109] In a specific implementation, an inductively coupled plasma etcher can be used to dry-etch the substrate 210. The etching gases can be sulfur hexafluoride and oxygen, the chamber pressure can be 5 mTorr, and the radio frequency power can be 500-800 W. During the etching process, lateral and vertical etching are performed simultaneously, gradually forming a groove morphology on the substrate 210. When the etching reaches the target size, the etching process is stopped.
[0110] Step S106: removing the mask layer 300 to complete chip preparation.
[0111] Specifically, the chip is placed in an acetone solution to remove the remaining mask layer 300 , and then the chip is taken out for rinsing and drying, thereby completing the preparation of the chip.
[0112] In some embodiments, before preparing the thermal insulation layer 221 on the substrate 210 , a support layer 223 is further prepared on the substrate 210 .
[0113] That is to say, in a specific implementation, the substrate 210 can be used as the support layer 223 of the pixel array 220 , or the support layer 223 can be prepared on the basis of the substrate 210 , which is not limited in this embodiment.
[0114] In some embodiments, mask layer 300 includes a photoresist layer.
[0115] It should be noted that the photoresist layer has good photosensitivity to ensure the replication and transfer of the pixel pattern.
[0116] In some embodiments, the mask layer 300 further includes a metal layer, and the metal layer is located between the light absorbing layer 222 and the photoresist layer.
[0117] Specifically, a photoresist layer can be used as the mask layer 300, or a metal layer and a photoresist layer can be used together as the mask layer 300. In this case, a metal layer with a thickness of less than 200 nm is first prepared before the photoresist layer is formed, and then a photoresist layer is formed on the metal layer. After the pixel pattern is formed on the photoresist layer, the pixel pattern is transferred to the metal layer through dry etching or wet etching. After the etching of the substrate 210 is completed, the photoresist layer and the metal layer can be removed using a wet etching method.
[0118] The various embodiments or implementation methods in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referenced to each other.
[0119] It should be noted that phrases such as "one embodiment," "an embodiment," "exemplary embodiments," and "some embodiments" in this specification may indicate embodiments that may include a particular feature, structure, or characteristic, but not every embodiment necessarily includes that particular feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in conjunction with an embodiment, it is within the knowledge of those skilled in the art to implement such feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not.
[0120] Generally speaking, terms should be understood, at least in part, based on the context in which they are used. For example, as used herein, the term "one or more" can be used to describe any feature, structure, or characteristic in the singular sense, or can be used to describe a combination of features, structures, or characteristics in the plural sense, depending at least in part on the context. Similarly, terms such as "a," "an," or "the" can also be understood to convey either singular or plural usage, depending at least in part on the context.
[0121] It should be readily understood that “on,” “above,” and “over” in this disclosure should be interpreted in the broadest manner, such that “on” means not only “directly on something,” but also includes “on something” with intervening features or layers therebetween, and “above” or “over” includes not only the meaning of “above” or “over,” but also includes “above” or “over” with no intervening features or layers therebetween (i.e., directly on something).
[0122] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims
1. An infrared scene generation chip, used for an infrared scene generation device, wherein the infrared scene generation device has an infrared window and a visible light window, characterized in that: Infrared scene generation chip includes: A substrate and a pixel array, wherein the substrate is a silicon carbide substrate, the substrate is arranged opposite to the infrared window, the pixel array is arranged on the side of the substrate facing the visible light window, and the infrared scene generation chip is constructed to convert visible light incident from the visible light window into infrared light, and the infrared light is suitable for being emitted from the infrared window.
2. The infrared scene generation chip according to claim 1, characterized in that: The pixel array includes: a heat insulation layer and a light absorption layer, the light absorption layer and the substrate are respectively located on both sides of the heat insulation layer, and the light absorption layer is arranged opposite to the visible light window.
3. The infrared scene generation chip according to claim 2, characterized in that: The light absorbing layer is at least one of a metallic black material, a carbon-based material, a light trapping structure and a superstructure.
4. The infrared scene generation chip according to claim 2, characterized in that: The duty cycle of the pixel pattern is not less than 40%.
5. The infrared scene generation chip according to any one of claims 2 to 4, characterized in that: The pixel array further includes a support layer, which is located between the heat insulation layer and the substrate.
6. The infrared scene generation chip according to claim 5, characterized in that: The support layer is composed of a micro-nano structure, and the micro-nano structure includes at least one of a microcavity, a microbridge, a microcolumn, and a microgroove.
7. The infrared scene generation chip according to claim 5, characterized in that: The thickness of the support layer is not less than 1 μm.
8. The infrared scene generation chip according to any one of claims 2 to 4, characterized in that: The substrate constitutes a supporting layer of the pixel array.
9. An infrared scene generating device, characterized in that: include: A cavity having a hollow accommodating cavity, the cavity including a visible light window and an infrared window for transmitting light; The infrared scene generation chip according to any one of claims 1 to 8 is arranged in the accommodating cavity, the substrate is arranged opposite to the infrared window, the pixel array is arranged on the side of the substrate facing the visible light window, and the infrared scene generation chip is constructed to convert visible light incident from the visible light window into infrared light, and the infrared light is suitable for being emitted from the infrared window.
10. The infrared scene generating device according to claim 9, characterized in that: The accommodating cavity is a vacuum cavity.
11. The infrared scene generating device according to claim 9, characterized in that: The infrared scene generation device is constructed such that when a transmissive optical path is adopted, the visible light window and the infrared window are respectively located on two opposite sides of the infrared scene generation chip.
12. The infrared scene generating device according to claim 9, characterized in that: The infrared scene generating device is configured such that when a reflective optical path is adopted, the visible light window and the infrared window serve as a common window.
13. The infrared scene generating device according to claim 9, characterized in that: The average visible light transmittance of the visible light window is greater than 90%; and / or, The average transmittance of the infrared window in the 8μm-14μm band is greater than 80%.
14. An infrared scene generation device, characterized in that: include: The infrared scene generating device according to any one of claims 9 to 13.
15. A vehicle, characterized in that: The infrared scene generating device comprises the infrared scene generating apparatus according to claim 14; or the infrared scene generating device according to any one of claims 9 to 13.
16. A method for preparing an infrared scene generation chip, characterized in that: The following steps are involved: preparing a heat insulation layer on a substrate, wherein the substrate is a silicon carbide substrate; preparing a light absorbing layer on the heat-insulating layer; preparing a mask layer on the light absorbing layer, and performing ultraviolet exposure and development on the mask layer to obtain a pixel pattern; Etching the light absorbing layer and the heat insulating layer using a mask layer so that the light absorbing layer and the heat insulating layer obtain the same pixel pattern as that of the mask layer; etching the substrate using a mask layer; Remove the mask layer and complete chip preparation.
17. The method for preparing the infrared scene generation chip according to claim 16, characterized in that: Before preparing the thermal insulation layer on the substrate, the method further comprises: A supporting layer is prepared on the substrate.