LED light-emitting chip packaging method

Abstract

The invention relates to the technical field of semiconductor device packaging, in particular to an LED light-emitting chip packaging method. The method comprises the following steps: S1, selecting an LED light-emitting chip according to a user demand; s2, carrying out cleaning and wafer expansion treatment on the chip bearing piece; s3, fixing the LED light-emitting chip on the bonding pad of the chip bearing piece; s4, the LED light-emitting chip is covered with fluorescent glue; and S5, carrying out curing treatment on the fluorescent glue. According to the invention, the optical effect of an LED product can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device packaging, and in particular to a method for packaging an LED light-emitting chip. Background Art

[0002] Currently, LED chip packaging primarily involves chip preparation: wafer dicing to obtain individual chips, which are then sorted and cleaned according to optoelectronic parameters. Next, the substrate is processed: the circuit board is cleaned and the pads are silver or gold plated. Next, the die bonding stage occurs: the chip is precisely attached to the substrate pads and secured with conductive adhesive or solder to create an electrical connection. Interconnections are then completed, and electrodes are connected using gold wire bonding or flip-chip bonding techniques. This is followed by packaging and protection. However, this currently relies on the chip's inherent luminous properties, resulting in a single spectrum, difficulty adjusting the color temperature, and suboptimal light angles. Summary of the Invention

[0003] In view of this, the present invention provides an LED light-emitting chip packaging method for solving the technical problems of the existing LED light-emitting chip packaging method being limited by the light-emitting performance of the light-emitting chip itself, having a single spectrum, and having an unsatisfactory light-emitting angle.

[0004] The technical solution adopted in the present invention is: In a first aspect, the present invention provides a method for packaging an LED light-emitting chip, the method comprising the following steps: S1: Select LED light-emitting chips according to user needs; S2: Cleaning and wafer expansion of the chip carrier; S3: Fixing the LED light-emitting chip on the pad of the chip carrier; S4: Cover the LED light-emitting chip with fluorescent glue; S5: Curing the fluorescent glue.

[0005] Preferably, the step S1: selecting an LED light-emitting chip according to user needs further includes: S11: Obtain the expected luminous color according to user needs; S12: Determining a light-emitting wavelength band of the LED light-emitting chip according to the expected light-emitting color, wherein the light-emitting wavelength band is between 447.5 nm and 460 nm; S13: Screening LED light-emitting chips according to the light-emitting wavelength band.

[0006] Preferably, the step S2: cleaning and expanding the chip carrier further comprises: S21: Determine ultrasonic cleaning parameters according to cleaning requirements, wherein the cleaning parameters include ultrasonic frequency, power density, temperature, and time; S22: placing the chip carrier into the ultrasonic tank and completely immersing the chip carrier in the cleaning solution; S23: Turn on ultrasonic oscillation and perform ultrasonic cleaning on the chip carrier according to ultrasonic cleaning parameters; S24: After cleaning, the chip carrier is dried.

[0007] Preferably, the step S2: cleaning and expanding the chip carrier further comprises: S25: Place the wafer with the film material attached on the wafer expansion machine stage; S26: Performing preliminary stretching to stretch the film material to a first chip spacing; S27: performing main stretching to stretch the film material to a second chip pitch, wherein the second chip pitch is greater than the first chip pitch.

[0008] Preferably, the step S3: fixing the LED light-emitting chip on the pad of the chip carrier further comprises: S31: Apply solder paste to a first preset position of the chip carrier; S32: Get the current position of the LED light emitting chip; S33: moving the picking component to the current position to pick up the LED light-emitting chip; S34: Get pad position; S35: Control the pickup component to move the LED light emitting chip and fix the LED light emitting chip at the soldering pad position; S36: The solder paste is solidified by reflow soldering to form a solder joint between the LED light emitting chip and the solder pad.

[0009] Preferably, the step S4: covering the LED chip with fluorescent glue further comprises: S41: selecting a phosphor corresponding to the luminescent color according to the luminescent color, wherein the phosphor includes a red phosphor and a yellow phosphor, wherein the mass percentage of the yellow phosphor is 85% to 90%, and the mass percentage of the red phosphor is 10% to 15%; S42: mixing the phosphor and the silica gel to obtain a dispensing material; S43: Determine dispensing parameters according to the light output angle; S44: Control the dispensing equipment according to the dispensing parameters to cover the dispensing material on the LED light-emitting chip.

[0010] Preferably, the step S5: curing the fluorescent glue further comprises: S51: Preliminary curing of the fluorescent glue at a first temperature, wherein the preliminary curing time is 1 hour; S52: Post-curing the fluorescent glue at a second temperature, the post-curing time being 4 hours, and the second temperature being higher than the first temperature.

[0011] Preferably, the method further comprises: S61: Detecting the luminous flux of the packaged LED chip; S62: Detecting the color temperature of the packaged LED chip; S63: Detecting the voltage of the packaged LED chip.

[0012] Preferably, the method further comprises: S71: Obtain the brightness and color temperature of each LED chip after packaging; S72: Obtain brightness and color temperature grading standards; S73: Classifying the packaged LED chips according to the brightness and color temperature classification standards and the brightness and color temperature of each LED chip.

[0013] Preferably, the method further comprises: S81: Acquire continuous lighting environment simulation parameters; S82: Controlling the packaged LED chips to light up continuously according to the simulation parameters; S83: Detect the attenuation rate and lifespan of the LED light emitting chip.

[0014] Beneficial Effects: The LED chip packaging method of the present invention utilizes uniform coverage of fluorescent glue to ensure precise control of LED luminescence characteristics, enabling the product to meet the specific requirements of different application scenarios for optical parameters such as color temperature and color rendering index, significantly improving the product's optical quality. The resulting fluorescent glue protective layer effectively isolates the chip from environmental factors, significantly improving the product's stability in harsh environments such as high temperature and high humidity, extending its service life, and ensuring good repeatability and consistency in LED luminescence products, effectively reducing parameter fluctuations during the production process and ensuring highly consistent product performance during mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work, and these are all within the scope of protection of the present invention.

[0016] Figure 1 Schematic diagram of the process of the LED light emitting chip packaging method of the present invention; Figure 2 This is a flow chart of a method for selecting LED light-emitting chips according to requirements according to the present invention; Figure 3 A schematic flow chart of a method for cleaning a chip carrier according to the present invention; Figure 4 Schematic diagram of the process of the crystal expansion process of the present invention; Figure 5 Schematic diagram of the process of the present invention for thorn crystal operation; Figure 6 Schematic diagram of the process of the dispensing operation of the present invention; Figure 7 Schematic diagram of the curing process of the present invention; Figure 8 Schematic diagram of the process of testing LED chips after packaging according to the present invention; Figure 9 Schematic diagram of the process of the method for grading LED chips according to the present invention; Figure 10 The figure is a flow chart of the method for detecting the connection and lighting of LED chips according to the present invention. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. It should be noted that, in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. In the description of the present invention, it should be understood that the orientation or position relationship indicated by the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further limitations, elements defined by the phrase "comprising..." do not preclude the presence of additional identical elements in the process, method, article, or apparatus comprising the elements. The embodiments of the present invention and the features thereof may be combined with each other if there is no conflict, and all are within the scope of protection of the present invention.

[0018] Example 1 like Figure 1 As shown, this embodiment provides a method for packaging an LED light-emitting chip, the method comprising the following steps: S1: Select LED light-emitting chips according to user needs; User needs include user requirements for the light color of LED light-emitting chips, such as Figure 2 As shown, this step specifically includes: S11: Obtain the expected luminous color according to user needs; S12: Determine the light-emitting band of the LED light-emitting chip according to the expected light-emitting color; The emission wavelength is the wavelength range where the light intensity in the actual emission spectrum of the LED chip is concentrated. Different fluctuations correspond to different colors. For example, in specific implementations, the corresponding dominant wavelength can be queried in a standard light source or color management system based on the expected color temperature or color coordinates.

[0019] In one embodiment, the light emitting wavelength is between 447.5-460 nm; In this embodiment, the LED chip's emission wavelength is limited to the 447.5-460nm range. The emission wavelength refers to the dominant wavelength region within the actual spectrum emitted by the LED chip where the light intensity distribution is most concentrated, directly determining the color of the light produced by the LED. The 447.5-460nm wavelength range belongs to the blue region of visible light. When customizing LED products, users often specify specific emission color requirements. For example, a customer may request a cool white, warm white, or a specific blue color. In this case, the desired dominant wavelength range can be determined by querying a chromaticity diagram, color temperature coordinates, or a color management system. The system will prioritize blue LED chips with a dominant emission peak in the 447.5-460nm range to precisely match the user's needs. In practice, engineers can quickly locate the most suitable emission wavelength range based on the desired color temperature (e.g., 6500K cool white) or color coordinates by querying a standard light source library or color management database. Then, chips whose actual emission main wavelength falls within the range of 447.5-460nm are screened in the device library to ensure that the final light color presented by the product is consistent with the requirements.

[0020] In one specific embodiment, the emission wavelengths include a first wavelength of 447.5-450nm, a second wavelength of 450-452.5nm, a third wavelength of 452.5-455nm, a fourth wavelength of 455-457.5nm, and a fifth wavelength of 457.5-460nm. Users can select LED chips of corresponding wavelengths for packaging based on their actual needs. For example, if a user requires a high color gamut, a blue chip in the first wavelength (447.5–450nm) is preferred. This wavelength provides a purer, deeper blue, which is beneficial for combining with the red and green primary colors to form a larger color gamut triangle, resulting in richer colors and higher fidelity for display devices.

[0021] The brightness of an LED chip is related to its primary emission wavelength. Blue light chips with slightly longer wavelengths generally have higher external quantum efficiency and lower intrinsic material losses, allowing them to output higher luminous flux under the same driving conditions. Therefore, when using high-brightness lighting products, chips emitting in the fifth wavelength band (457.5–460nm) are more suitable.

[0022] The second to fourth emission bands achieve a balance between brightness and color gamut, and are suitable for general lighting or standard display applications that have certain requirements for both color gamut and brightness; In one embodiment, the step S1: selecting an LED light-emitting chip according to user needs includes: S011. Obtain target color temperature, target color coordinates, target brightness, and target color saturation according to user requirements; The target color temperature is the nominal color temperature that users desire for the final white light or visible light, often expressed in Kelvin. The target color coordinates are the coordinates of the light color in the CIE 1931 or CIE 1976 chromaticity diagram. The target brightness is the luminous flux or intensity output by the chip or module under specified driving conditions. The target color saturation is the color purity or color gamut coverage required by the user. Quantifying the user's light quality requirements provides a foundation for subsequent band conversion and weighting assessment. The color temperature and color coordinates are read from the data sheet or interactive interface, and brightness and color saturation thresholds are determined based on the application scenario (such as indicator light, backlighting, or lighting) to form a complete target parameter set.

[0023] S012. Perform chromaticity matching and conversion based on the target color temperature and target color coordinates to obtain an initial center value of the target dominant wavelength; Chromaticity matching is performed according to the color temperature and color coordinates, and the target color point is inversely calculated using the blackbody locus or projected onto the equivalent blue light excitation model to obtain the initial value of the main wavelength that best matches the chromaticity.

[0024] S013. Determine a wavelength tolerance range based on a preset optical tolerance range and a preset manufacturing tolerance range; The preset optical tolerance range is the wavelength offset corresponding to the allowable chromatic aberration, and the preset manufacturing tolerance range is the wavelength control accuracy that can be achieved by the chip growth process. By superimposing the chromatic aberration tolerance and process fluctuations, the actual usable wavelength tolerance band is obtained to ensure that subsequent screening meets both visual consistency and mass production accessibility.

[0025] Specifically, the optical tolerance range and the manufacturing tolerance range can be superimposed. If the two values ​​are close, they can be directly added to obtain the total tolerance. If the manufacturing tolerance is significantly smaller than the optical tolerance, the optical tolerance can be taken as the total tolerance. If the manufacturing tolerance is significantly larger than the optical tolerance, a safety margin can be added to the optical tolerance and then compared with the manufacturing tolerance to finally generate the actual usable wavelength tolerance range, which provides boundary parameters for subsequent band slicing. S014. Divide the wavelength tolerance range by taking the initial center value of the target main wavelength as the center to obtain a plurality of candidate light emitting wavelength band intervals; Based on the initial center value of the target dominant wavelength, the wavelength is divided into several continuous and non-overlapping candidate wavelength ranges at equal intervals on both sides. These ranges cover the effective range defined by the optical tolerance and manufacturing tolerance, providing a discrete wavelength set for subsequent performance evaluation.

[0026] S015. Perform weighted calculation on the brightness gain factor and the color gamut gain factor of each candidate light-emitting wavelength interval according to the target brightness and the target color saturation to obtain a comprehensive evaluation value for each candidate light-emitting wavelength interval; Based on the user's target brightness and color saturation, each candidate wavelength is evaluated for its brightness enhancement and color gamut coverage. The brightness and color saturation factors are then weighted according to the set weights to calculate a comprehensive evaluation value for each candidate wavelength. The higher the evaluation value, the better the wavelength meets the brightness and color requirements.

[0027] S016. Select the candidate luminous band interval with the highest comprehensive evaluation value according to the priority list to obtain the target luminous band interval; The candidate bands are sorted from high to low according to the comprehensive evaluation value to form a priority list; the band with the highest score in the list is determined as the target luminous band. If the score difference between adjacent bands is within an acceptable range, they can be retained as alternatives at the same time.

[0028] S017: Obtain a corresponding LED light-emitting chip according to the target light-emitting wavelength range.

[0029] Based on the determined target luminous band, obtain the luminous chips whose main peak wavelength and half-width parameters meet the requirements, and check their light intensity and voltage consistency, and finally obtain a list of chips that can be directly used for packaging.

[0030] S13: Screening LED light-emitting chips according to the light-emitting wavelength band.

[0031] By clearly defining the target wavelength, the appropriate model can be quickly identified from a wide range of chip varieties. In practice, the LED chip that meets or most closely matches the target can be selected by comparing it with the supplier's technical manual or spectrum test report. This improves the color consistency and performance stability of the finished product after subsequent packaging.

[0032] S2: Cleaning and wafer expansion of the chip carrier; A chip carrier refers to a substrate or bracket used to support, secure, and provide electrical connections and heat dissipation channels for LED chips. In the actual packaging process, the carrier must have both mechanical strength to withstand the thermal stress of subsequent reflow and curing processes, and provide clear pads or circuit patterns to ensure reliable soldering between the chip and the external circuit. The chip carrier of this embodiment can be a bracket or a PCB. The PCB (printed circuit board) can connect the LED chip to other components (such as driver ICs, resistors, etc.) through copper traces to form a complete circuit. Metal-based PCBs (such as aluminum substrates) can conduct heat generated by the chip to an external heat sink. The PCB also provides physical support for the chip and packaging materials (such as fluorescent glue) to maintain structural stability. The bracket (lead frame) is directly connected to the chip electrodes through metal pins (usually copper or iron plated with silver), and has a simple structure.

[0033] Using a bracket as a carrier is suitable for discrete LEDs (such as SMD LEDs), and can achieve low-cost packaging without complex wiring. In addition, the bracket has a built-in groove (reflector cup) to improve light extraction efficiency.

[0034] In this step, cleaning involves using ultrasonic waves at a specific temperature, power, and time to remove oil, oxides, and particulate impurities from the surface of the PCB or bracket, thereby enhancing the adhesion of the solder paste. Wafer expansion involves using stretching equipment to stretch the chips on the bonded wafer from their original densely packed state to a larger spacing for subsequent pickup.

[0035] S3: Fixing the LED light-emitting chip on the pad of the chip carrier; This step can establish a reliable electrical connection and mechanical fixation, ensuring low and stable contact resistance between the LED light-emitting chip and the bracket or PCB, thereby improving the device's thermal conductivity and mechanical vibration resistance.

[0036] S4: Cover the LED chip with fluorescent glue; This step involves encapsulating the LED chip with fluorescent glue. This method not only protects the chip from external heat, moisture, and mechanical stress, but also converts shortwave blue or ultraviolet light into white light or other colors through the phosphor, achieving the desired color rendering and high color gamut.

[0037] S5: Curing the fluorescent glue.

[0038] This step, through curing, optimizes the adhesive layer's physical properties (such as hardness and adhesion) and optical properties (such as transmittance and fluorescence conversion efficiency). This results in a robust package structure, excellent environmental stability, and a long thermal cycle life, ensuring the device can operate continuously for extended periods of time.

[0039] like Figure 3 As shown, in this embodiment, the S2: cleaning and expanding the chip carrier also includes: S21: Determine ultrasonic cleaning parameters according to cleaning requirements, wherein the cleaning parameters include ultrasonic frequency, power density, temperature, and time; In this step, the material of the carrier, the type and degree of surface contamination, the characteristics of the cleaning fluid, and the process rhythm need to be comprehensively considered according to the cleaning requirements. The ultrasonic frequency is adjusted to strike a balance between cleaning efficiency and substrate damage. The power density is set to ensure sufficient cavitation to remove attached particles without excessive surface erosion. The temperature is controlled to optimize the fluidity and chemical reaction rate of the cleaning fluid. At the same time, the cleaning time is reasonably determined while ensuring thorough cleaning to avoid moisture absorption or structural fatigue of the substrate due to excessive cleaning, thereby achieving efficient, safe, and repeatable cleaning results. S22: placing the chip carrier into the ultrasonic tank and completely immersing the chip carrier in the cleaning solution; In this step, the pre-treated chip carrier is gently placed into the cleaning liquid surface of the ultrasonic tank to ensure that its surface and pad area are completely covered by the liquid, so that the cavitation effect generated by the ultrasonic vibration can act evenly on all parts of the carrier, while avoiding local bubbles or liquid surface interference to cause cleaning dead corners, thereby ensuring that the dirt and particles on the entire pad and bracket surface are completely peeled off and suspended in the cleaning liquid, providing a clean and pollution-free base for the subsequent drying and crystal expansion processes.

[0040] S23: Turn on ultrasonic oscillation and perform ultrasonic cleaning on the chip carrier according to ultrasonic cleaning parameters; In this step, the ultrasonic generator is started to make the cleaning liquid generate high-frequency vibrations, and the ultrasonic energy under the preset frequency, power density and temperature conditions is transmitted to the surface of the carrier. The tiny bubbles formed in the liquid produce strong local impact and micro-jet effects when they burst, which can effectively peel off the oil, oxides and tiny particles attached to the surface of the pad and the bracket. During the whole process, the cleaning machine continues to maintain a stable oscillation state and regularly monitors the transparency and temperature of the cleaning liquid until the dirt is fully fallen off and evenly dispersed in the cleaning liquid.

[0041] S24: After cleaning, the chip carrier is dried.

[0042] In this step, the cleaned chip carrier is taken out of the cleaning liquid and immediately placed in a drying device to accelerate water evaporation through convection drying or vacuum suction to ensure that there are no residual droplets or trace water film on the surface of the pads and brackets. At the same time, during the drying process, the air or inert gas is properly circulated and filtered to prevent dust and impurities from adhering again, thereby providing a dry and clean carrying surface for the subsequent crystal expansion and crystal bonding steps.

[0043] like Figure 4 As shown, in this embodiment, the S2: cleaning and expanding the chip carrier further includes: S25: Place the wafer with the film material attached on the wafer expansion machine stage; In this step, the wafer covered with protective film is gently placed in the center of the carrier of the wafer expander, and the wafer is horizontally positioned and fixed using a laboratory-grade clamp or vacuum adsorption device to ensure that the wafer surface is flat and the film material is wrinkle-free. At the same time, check that the contact surface between the carrier and the wafer is clean and free of particles, so as to maintain uniform force during the subsequent stretching process and prevent the film material from shifting, resulting in inconsistent chip spacing.

[0044] S26: Performing preliminary stretching to stretch the film material to a first chip spacing; In this step, the tension control system that drives the crystal expander applies a uniform tensile force to the film material on the carrier, causing it to gradually transition from its original tightly arranged state to the preset first chip spacing. The entire process is monitored by sensors in real time to monitor the tension and displacement changes to ensure that the film material remains straight during the stretching process and does not produce warping or local stress concentration. At the same time, the stretching rate and tension distribution are adjusted through closed-loop feedback to obtain a uniform and consistent initial chip spacing, laying a stable foundation for subsequent fine stretching.

[0045] S27: performing main stretching to stretch the film material to a second chip pitch, wherein the second chip pitch is greater than the first chip pitch.

[0046] In this step, the expansion machine's tension control system increases the stretching force beyond the initial stretching, further extending the film from the first chip spacing to a larger second chip spacing. Simultaneously, online displacement and tension sensors monitor the film's elongation in real time and provide feedback to the control system to precisely adjust the stretching rate and force distribution, ensuring the film remains flat and warp-free throughout the main stretching process. Ultimately, the target uniform spacing is achieved without damaging the chips. The second chip spacing is 0.6mm.

[0047] like Figure 5 As shown, in this embodiment, the step S3: fixing the LED light-emitting chip on the pad of the chip carrier further includes: S31: Apply solder paste to a first preset position of the chip carrier; The first preset position refers to the position on the chip carrier where solder paste needs to be applied according to the packaging process requirements.

[0048] In this step, first, according to the circuit design diagram and pad layout of the carrier, the first set of pad coordinates and the corresponding solder paste amount distribution are pre-set in the dispensing machine program. During operation, the dispensing head moves precisely to above the first preset position according to these coordinates, and the solder paste is evenly applied to the pad surface with a controllable glue amount and spraying speed to ensure that the solder paste is fully covered and does not overflow into the surrounding area, thereby providing a good solder foundation for subsequent chip mounting and reflow soldering, and ensuring the mechanical strength and electrical conductivity reliability of the solder joints.

[0049] S32: Get the current position of the LED light emitting chip; In this step, the picking system scans the wafer through its built-in visual positioning module to capture the actual coordinate information of the LED light-emitting chip. The system matches the detected image with the pre-stored reference template, calculates the position data of the chip center point in real time and transmits it to the control unit, providing a precise spatial positioning basis for subsequent robotic arm movement and picking actions, to ensure that the picking component can be accurately aligned with the chip without misalignment.

[0050] S33: moving the picking component to the current position to pick up the LED light-emitting chip; In this step, the control system instructs the robotic arm or picking head to move smoothly to the top or side of the target position along the three-dimensional coordinate axis according to the chip position coordinates obtained in the previous step, and fine-tunes the end effector to align with the center of the chip through the built-in position feedback mechanism. Then, the suction or clamping device is activated to firmly adsorb or clamp the LED light-emitting chip to the end of the picking component while ensuring that the fitting surface is flat and the force is uniform, in preparation for subsequent precise placement.

[0051] S34: Get pad position; In this step, the system calls the layout data of the carrier or scans the pad area through the visual recognition module, compares and calibrates the detected pad contour with the pre-stored design model, calculates the pad center coordinates and angle information in real time, and feeds it back to the motion control unit to provide a spatial reference for the subsequent precise positioning and placement of the picked-up components.

[0052] S35: Control the picking component to move the LED light-emitting chip and fix the LED light-emitting chip at the pad position; in this step, after the control unit transmits the pad position coordinates to the motion control system, it drives the picking component to move smoothly along the path to the docking area between the chip and the pad under three-axis linkage, and after determining that the relative position is accurate, it further slowly descends until the bottom of the chip lightly touches the solder paste layer, and then locks the chip position through vacuum holding or micro-clamps to resist subsequent motion interference, thereby achieving initial bonding between the chip and the pad and providing a stable pre-state for subsequent reflow soldering curing.

[0053] S36: The solder paste is solidified by reflow soldering to form a solder joint between the LED light emitting chip and the solder pad.

[0054] In this step, the carrier carrying the chip is placed in a reflow oven. The solder paste is transformed from a semi-solid state to a liquid state through a set temperature curve and wets the bottom of the chip and the surface of the pad. With the help of the surface tension and diffusion of the liquid tin, a uniform metal fusion joint is formed between the bottom of the chip and the pad. After the temperature of the reflow oven drops, the solder paste cools and solidifies, thereby establishing a reliable electrical and mechanical connection.

[0055] like Figure 6 As shown, in this embodiment, the step S4: covering the LED chip with fluorescent glue further includes: S41: selecting a phosphor corresponding to the luminescent color according to the luminescent color; In this step, based on the expected luminescent color characteristics, first refer to the correspondence between the color temperature or color coordinates and the conversion spectrum of the phosphor, and select the powder whose emission peak matches the target color gamut from the available phosphor varieties; specifically, the phosphor model that meets the target color temperature and color rendering performance can be screened out through spectral data or the excitation-emission curve measured in the laboratory, and its batch number and particle size distribution are marked to ensure that the desired color conversion effect can be achieved with minimal fluctuation after the materials are mixed in the subsequent packaging.

[0056] S42: mixing the phosphor and the silica gel to obtain a dispensing material; In this step, the silica gel and phosphor are mixed and adjusted to the desired color, and then stirred evenly with a blender to obtain the final dispensing material.

[0057] In one embodiment, the phosphor powder includes red phosphor and yellow phosphor, wherein the mass percentage of the yellow phosphor is 85% to 90% and the mass percentage of the red phosphor is 10% to 15%. The mass ratio of the phosphor powder to the fluorescent glue is 0.5:1, and the fluorescent glue is composed of glue A and glue B, and the mass ratio of glue A to glue B is 1:4.

[0058] Specifically, the phosphor part is a mixture of these two powders, and the ratio can be adjusted within a certain range, such as: 90% yellow, 10% red (warmer white), or 85% yellow, 15% red (reddish light).

[0059] In this embodiment, the yellow phosphor can be selected from the representative cerium-doped yttrium aluminum garnet (YAG:Ce 3+ ), whose chemical formula is Y3A l5 O 12 :Ce. This phosphor emits yellow light with a wavelength of approximately 550-560 nm when excited by blue light. It is currently one of the most widely used yellow phosphor materials in white light LEDs, offering high brightness and excellent thermal and chemical stability. Alternatively, Eu2+-doped oxynitride phosphors, such as Ca-α-SiAlON:Eu, can be used. These materials emit light around 580 nm and offer higher thermal stability and color purity, making them suitable for high-power LED systems.

[0060] The red phosphor can be selected from Mn4+ doped fluoride phosphors, such as K2SiF6:Mn4+ or Na2SiF6:Mn 4+ , which emits a narrow band red light with a wavelength of about 630~650 nm under the excitation of blue light or violet light, has extremely high color purity and excellent photothermal stability, and is often used to improve the LED color rendering index and adjust the correlated color temperature. In addition, Eu 3+ Doped oxide phosphors such as Y2O3:Eu 3+ This type of material can also produce pure red emission under violet light excitation and is suitable for certain specific packaging or violet light excitation systems.

[0061] The fluorescent glue can be a two-component silicone or epoxy resin system. Specifically, glue A can be a main resin containing epoxy groups or a siloxane structure, and glue B acts as a crosslinker or curing agent. It is mixed with glue A in a mass ratio of 1:4 to form a curing system. Common fluorescent glue systems include epoxy resin systems. This type of fluorescent glue has excellent light transmittance, yellowing resistance, and thermal stability. It can effectively encapsulate phosphors and ensure their dispersion and long-term stability during the packaging process. The choice of glue system can be flexibly adjusted according to the requirements of the LED packaging process (such as curing conditions, thermal conductivity, weather resistance, etc.).

[0062] S43: Determine dispensing parameters according to the light output angle; In this step, based on the expected light output angle requirements, the system combines the nozzle diameter, syringe pressure and travel speed parameters of the dispensing head to calculate the glue layer shape and thickness distribution through simulation or empirical formulas to ensure that the refraction and diffusion of light on the chip surface and in the phosphor layer after the colloid is cured can form the target divergence angle, thereby guiding the dispensing equipment to set the appropriate dispensing speed, pressure and trajectory to obtain a uniform, bubble-free glue layer on the chip surface that meets the light output angle requirements.

[0063] S44: Control the dispensing equipment according to the dispensing parameters to cover the dispensing material on the LED light-emitting chip.

[0064] In this step, the control unit sends the dispensing parameters (including glue volume, glue output speed, injection pressure and motion trajectory, etc.) calculated in the previous step to the dispensing equipment. The dispensing head moves along a predetermined path in three-dimensional space according to the parameters, and achieves uniform coverage of the glue on the surface of the LED chip by precisely controlling the nozzle opening time and pressure. At the same time, the system monitors the glue output volume and position in real time and automatically fine-tunes the actuator action to ensure that the glue layer is complete, the thickness is consistent, and there are no bubbles or glue overflow, providing a reliable foundation for subsequent curing and optical performance.

[0065] In another embodiment, the chip carrier is an aluminum substrate, and the step S3 of fixing the LED light-emitting chip on the pad of the chip carrier includes: S031. Obtain a thermal conductivity range based on a target operating current and thermal design power of the LED light-emitting chip; Specifically, the target operating current of an LED chip refers to the rated current designed for actual use, typically measured in milliamperes (mA). For example, a common low-power LED chip has an operating current of 20mA, while a high-power chip may reach 350mA or even higher. The thermal design power (TDP) refers to the maximum thermal dissipation generated by the chip during operation, typically measured in watts (W), with designs typically targeting 1W, 3W, and 10W, for example. By clearly understanding the chip's power consumption and heat generation, its basic requirements for heat dissipation can be rationally deduced, providing a scientific basis for the subsequent selection of thermal adhesive. If the chip is designed for high current and high power, higher thermal conductivity is essential to prevent excessive junction temperature and failure. First, the chip's typical operating current and thermal power should be reviewed or tested. Then, using thermal simulations, empirical curves, or a lookup table, a thermal conductivity range suitable for the power consumption should be derived. For example, a 3W power chip typically requires a thermal adhesive with a 2W / mK or higher rating, while a 10W chip should use a 3W / mK or higher rating.

[0066] S032. Obtain a target thermal expansion coefficient based on a first thermal expansion coefficient of the LED light-emitting chip and a second thermal expansion coefficient of the aluminum substrate, wherein the target thermal expansion coefficient is between the first thermal expansion coefficient and the second thermal expansion coefficient; Specifically, the thermal expansion coefficient refers to the ability of a material to expand linearly with temperature changes. For example, but not limited to, the thermal expansion coefficient of an aluminum substrate is usually between 22 and 24×10 -6 / K, while the thermal expansion coefficient of LED chips such as SiC or GaN is usually lower, 3-7×10 -6 / K, the difference in thermal expansion properties of the two materials will cause mechanical stress during hot and cold cycles. Therefore, the purpose of this step is to derive an intermediate value as the target thermal expansion coefficient by comparing the thermal expansion coefficients of the chip and substrate. This is used to guide the material selection and formulation adjustment of the thermal conductive adhesive, thereby reducing interface fatigue or delamination caused by thermal expansion mismatch. Specifically, the thermal expansion coefficients of the LED chip and the aluminum substrate can be weighted by consulting the device manual or measuring the thermal expansion coefficients of both. By adjusting the colloid formula (increasing the proportion of inorganic fillers, selecting a suitable resin matrix, etc.), a thermal conductive adhesive that meets the target thermal expansion coefficient can be customized to relieve interface stress without affecting thermal conductivity.

[0067] S033. Obtaining a corresponding thermally conductive adhesive according to the thermal conductivity range and the target thermal expansion coefficient; Thermally conductive adhesives are adhesive materials specifically designed for thermal interface management. They are typically composed of a polymeric organic matrix and inorganic thermally conductive fillers (such as alumina, silicon nitride, aluminum nitride, and graphene). Their performance must meet multiple performance criteria, including thermal conductivity, thermal expansion, and bond strength. This step aims to comprehensively screen or formulate the most suitable thermally conductive adhesive material for the current chip-substrate structure, based on the aforementioned thermal management requirements and thermal expansion matching requirements. Only adhesives that meet these two core parameters can achieve both thermal dissipation performance and structural reliability. Consult the thermal conductive adhesive manufacturer's product specifications and prioritize products that meet both the thermal conductivity range and the required thermal expansion coefficient. For example, commonly used high-thermal conductivity epoxy adhesives can adjust their performance by adjusting the filler type and ratio. Custom materials can also be customized in collaboration with the supplier if necessary. After confirming the material, sample performance testing and process compatibility verification are required. This significantly improves the compatibility between the material and the structure, enabling customized, high-reliability LED packaging that balances heat dissipation, mechanical strength, and long-term durability, laying the material foundation for subsequent processes.

[0068] S034, performing ultrasonic cleaning on the surface of the aluminum substrate to obtain a cleaned aluminum substrate; Ultrasonic cleaning is an efficient cleaning method that uses high-frequency vibration waves to produce a cavitation effect in liquids to remove particles, oil stains and other impurities from solid surfaces. The purpose is to completely remove impurities such as oxide scale, oil stains, dust, etc. on the surface of aluminum substrates that affect the subsequent adhesion and interfacial bonding of thermal conductive adhesives, improve the interfacial bonding strength between the colloid and the substrate, and reduce hidden dangers such as bubbles and delamination caused by residual impurities.

[0069] S035. Applying thermal conductive adhesive to the soldering pad of the aluminum substrate according to the soldering pad size of the aluminum substrate and the preset thickness of the thermal conductive adhesive; Specifically, pad size refers to the size of the metal area on the aluminum substrate used for chip mounting. Its size is directly related to the amount of glue dispensed, the thickness of the glue layer, and the chip attachment area. The "preset thermal adhesive thickness" is the optimal glue layer thickness range determined in advance based on the chip structure, heat dissipation requirements, and production process. A common range is 0.15-0.2mm. This step aims to precisely control the amount and thickness of thermal adhesive based on structural design requirements, ensuring that the adhesive layer fully fills the microscopic gap between the chip and substrate without being too thick, increasing thermal resistance or affecting the mounting process.

[0070] To achieve this, use an automatic dispensing machine, scraper, or mold to evenly distribute the thermal adhesive across the pad surface. The amount of adhesive dispensed must be accurately calculated based on the pad area and target thickness. The adhesive should cover the entire mounting area without noticeable accumulation or exposed areas. For high-volume production, mechanical limit stops or inline weighing can be used for auxiliary control.

[0071] S036, controlling the pickup component to drive the LED light-emitting chip to move, and mounting the LED light-emitting chip on the thermal conductive adhesive of the pad; Picking components usually refer to the execution end of automated placement equipment such as vacuum nozzles and mechanical grippers, which are used to accurately pick up and move LED light-emitting chips from the chip incoming area. Placement refers to accurately positioning and placing the chip on the pad area after dispensing glue, so that it is in full contact with the thermal adhesive and initially fixed. According to program instructions and positioning vision systems, the automatic placement equipment picks up the LED chip from the material strip or wafer, moves it to the top of the designated pad area on the aluminum substrate, and then slowly lowers the chip into the thermal adhesive. This process can use low-pressure or heating-assisted placement to ensure that the chip is fitted without bubbles or displacement. After placement, slight adjustments can be made to ensure position accuracy, thereby ensuring complete fit between the chip and the thermal adhesive interface, optimizing the heat flow path, and improving the mechanical strength and heat dissipation performance after subsequent curing.

[0072] S037. Determine a target curing temperature based on material parameters of the thermally conductive adhesive; Thermal adhesive material parameters include characteristics such as the resin system, filler type, and crosslinking reaction temperature. Curing temperature requirements for different thermal adhesive formulations vary significantly. For example, silicone-based adhesives generally have lower curing temperatures, while epoxy-based adhesives require higher temperatures. The goal of this step is to appropriately set the curing temperature based on the recommended technical parameters of the specific thermal adhesive product to ensure sufficient crosslinking and performance, while also preventing damage to the chip and substrate due to excessive temperatures.

[0073] S038, curing the thermally conductive adhesive according to the target curing temperature; Specifically, curing is accomplished using oven heating, infrared heating, or hot plate heating. The target curing temperature is the optimal curing temperature parameter determined above. The aluminum substrate with the chip mounted is placed in a constant temperature oven and heated to the target curing temperature and time. The curing process should be uniformly heated to avoid local overheating. After curing is complete, cool to room temperature and inspect the adhesive layer's curing status and placement results.

[0074] In the embodiment where the chip carrier is an aluminum substrate, the step S4 of covering the LED chip with fluorescent glue further includes: S041. Obtain corresponding phosphor according to the dominant wavelength of the LED light emitting chip and the target light color temperature; Specifically, the dominant wavelength refers to the main peak wavelength of the LED chip's light, while the target color temperature is the final light color the user expects. Different phosphor formulations correspond to different color temperature outputs. By matching the dominant wavelength with the target color temperature, the type of phosphor that can output the desired light color under the excitation conditions is selected. For example, a blue light chip excites YAG yellow powder to produce white light, while blue light excites green powder to enhance the color rendering index. S042. Mixing the phosphor powder and the silica gel matrix according to a set ratio to obtain a basic fluorescent glue; The set ratio refers to the mass or volume ratio of phosphor to silicone base. A common ratio is 1:10 to 1:50, which needs to be adjusted based on the target light color and brightness. Silicone base adhesive is a highly transparent, age-resistant organic silicone material, the mainstream carrier for LED phosphor encapsulation. The weighed phosphor is slowly added to the stirring liquid silicone. Planetary mixing or vacuum degassing is used to evenly disperse the phosphor without agglomeration or bubbles, resulting in a base fluorescent adhesive with uniform color and high transmittance. This adhesive can be directly used for dispensing, molding, or coating encapsulation.

[0075] S043. Obtaining a target thermal conductivity and a first thickness based on an actual interface thickness of the thermally conductive adhesive and a heat dissipation path of the LED light-emitting chip; Specifically, the actual interface thickness refers to the actual measured thickness of the thermally conductive adhesive between the chip and the substrate after chip mounting. The heat dissipation path of the LED chip includes the thermal conduction link between the chip, thermally conductive adhesive, and substrate. The target thermal conductivity coefficient is the desired thermal conductivity efficiency of the thermal path of the composite package. The first thickness is the design thickness of the subsequent thermally conductive enhanced fluorescent adhesive layer. Based on the thickness of the thermally conductive adhesive and the heat generated by the chip, the required thermal conductivity of the fluorescent adhesive base layer is deduced, and the thickness of the thermally conductive enhanced fluorescent adhesive is set accordingly (e.g., 0.05-0.08mm) to form an ideal heat flow channel. The actual thermal conductive adhesive thickness is measured, and combined with the chip power and thermal design, the thermal resistance series calculation or simulation analysis is used to determine the thermal conductivity channel capacity required for the fluorescent adhesive base layer. For example, if the overall thermal resistance is desired to be less than the set value, the base layer adhesive must have a certain thermal conductivity coefficient and thickness to ensure smooth heat flow.

[0076] S044. According to the target thermal conductivity, nano-aluminum oxide is doped into the basic fluorescent glue to obtain a thermally conductive enhanced fluorescent glue; Nano-alumina is a kind of high thermal conductivity inorganic filler with fine particle size and good dispersibility. It can significantly improve the thermal conductivity of the colloid without significantly affecting the transparency. Thermal conductivity enhanced fluorescent glue refers to a functional colloid that retains the optical conversion ability and improves the thermal conductivity after introducing an appropriate amount of nano-alumina into the basic fluorescent glue. This step is to accurately achieve the thermal conductivity performance target of the colloid bottom layer. Specifically, nano-alumina is doped into the basic fluorescent glue, and after sufficient stirring and dispersion, a thermal conductivity enhanced fluorescent glue is obtained. First, the doping ratio of nano-alumina in the basic fluorescent glue is determined according to the target thermal conductivity coefficient, and then it is weighed and slowly added to the basic silica gel system in which the phosphor powder has been dispersed. High-speed stirring and vacuum degassing are used to ensure that the filler is uniform and free of agglomeration. The resulting colloid is used for subsequent interface coating. The beneficial effect brought about by this technical feature is to effectively improve the thermal conductivity of the bottom layer of the package, reduce thermal resistance on the basis of ensuring optical performance, and is particularly suitable for the thermal management needs of high-power LEDs.

[0077] S045. Coating the thermally conductive enhanced fluorescent glue on the surface of the LED light-emitting chip according to the first thickness and the thermally conductive enhanced type; Specifically, the goal is to establish an effective thermal conductivity interface, allowing heat from the chip to be quickly transferred to the substrate through the thermally conductive enhancement layer, while also providing a smooth foundation for the subsequent primary phosphor adhesive layer. An automatic dispensing machine is used to precisely control the dispensing volume and movement speed according to process parameters, accurately forming a layer of adhesive of the designed thickness. After dispensing, light pressure is applied to ensure that the adhesive adheres to the surface microstructure, preventing bubbles and voids.

[0078] S046, determining a second thickness of the basic fluorescent glue according to the preset fluorescent glue thickness and the first thickness; The default phosphor adhesive thickness is determined by the target package's optical performance and mechanical protection requirements, typically ranging from 0.18 to 0.25mm. The secondary thickness refers to the thickness of the primary phosphor adhesive required after removing the thermally enhanced adhesive layer (e.g., the default thickness of 0.22mm minus the primary thickness of 0.06mm yields a secondary thickness of 0.16mm).

[0079] This step ensures precise and controllable thickness of the final fluorescent adhesive encapsulation layer, ensuring optimal optical mixing, protection, and process compatibility. Accurately calculating the remaining adhesive thickness serves as the target for subsequent base fluorescent adhesive coating, facilitating the setting of dispensing process parameters and quality control during production.

[0080] S047. Coat the basic fluorescent glue on the surface of the thermally conductive enhanced fluorescent glue according to the second thickness.

[0081] Specifically, using precision dispensing or scraping techniques, the base fluorescent adhesive is applied to completely cover the thermally conductive enhancement layer, according to the thickness set in the previous step. During the dispensing process, the adhesive layer must be uniform in thickness and smooth in surface. A subsequent multi-stage curing process (such as low-temperature initial curing and high-temperature final curing) ensures a dense adhesive layer structure and high interfacial bonding strength. This creates a gradient, multifunctional composite adhesive structure with thermal conductivity at the bottom and high light transmittance at the top. This improves the overall light color consistency, light output efficiency, and long-term heat dissipation reliability of the LED device, adapting to the needs of higher power density and high-quality lighting applications.

[0082] By designing a layered packaging structure between the LED chip and the aluminum substrate, a bottom layer of thermally conductive adhesive ensures efficient heat dissipation from the chip. A thermally conductive enhanced phosphor adhesive (PTA) is introduced at the interface, creating a continuous heat flow path from chip to thermally conductive adhesive to phosphor adhesive, effectively reducing interfacial thermal resistance. Compared to traditional single-layer adhesive solutions, this structure significantly reduces chip junction temperature and extends the device's reliable life under high-power or long-term operation. The layered design, with a thermally conductive bottom layer and a highly transparent upper layer, not only improves chip heat dissipation but also ensures high transmittance and color purity in the main phosphor adhesive layer. The thickness of the main phosphor adhesive layer can be precisely adjusted to the target optical effect, ensuring consistent light color temperature and color chromatic aberration, effectively preventing color drift and brightness degradation, and improving the overall light quality of the LED product. The thermal expansion coefficients of the thermally conductive adhesive, thermally conductive enhanced phosphor adhesive, and base phosphor adhesive layers can be independently optimized. A gradient transition design brings the thermal expansion coefficients closer to those of the chip and aluminum substrate layer by layer, effectively mitigating interfacial stresses during thermal cycling, preventing failures such as peeling, cracking, and delamination caused by thermal expansion and contraction, and improving the long-term reliability of the structure.

[0083] like Figure 7 As shown, in this embodiment, the step S5: curing the fluorescent glue further includes: S51: Preliminary curing of the fluorescent glue at a first temperature, wherein the preliminary curing time is 1 hour; By placing the chip carrier covered with fluorescent glue in a controllable temperature environment, the activation reaction of the cross-linking agent in the silicone matrix is ​​started in a gentle manner, so that the molecular chains of the glue layer begin to form a preliminary network structure, thereby improving the adhesion and mechanical strength of the glue layer without introducing stress, laying the foundation for subsequent complete cross-linking at a higher temperature.

[0084] S52: Post-curing the fluorescent glue at a second temperature for 4 hours, where the second temperature is higher than the first temperature. In this step, the initially cured fluorescent glue is placed in a higher temperature curing environment to fully activate the crosslinking agent and remove residual solvent, allowing the glue layer to complete the formation of a crosslinked network, improving its mechanical strength, adhesion, and optical stability, ensuring long-term reliable operation.

[0085] This embodiment uses a two-stage curing method to cure the fluorescent glue to enhance the bonding strength of the material and stabilize the performance. The initial curing can be performed at a curing temperature of 80°C, and the post-curing can be performed at a curing temperature of 150°C.

[0086] like Figure 8 As shown, in this embodiment, the method further includes: S61: Testing the luminous flux of the packaged LED chip. In this step, the packaged LED chip is placed in a luminous flux measuring device. A precision photoelectric detection system collects all the light energy emitted by the chip, converts the light signal into an electrical signal, and calculates the luminous flux to evaluate the luminous efficiency and consistency of the packaged device. S62: Detecting the color temperature of the packaged LED chip; In this step, the color temperature of the light source of the packaged LED chip is measured using a colorimeter or spectrophotometer to obtain its equivalent color temperature value under the blackbody radiation model. This is used to determine the deviation between the actual light color and the expected target color temperature and to guide formulation or process adjustments. S63: Detecting the voltage of the packaged LED chip.

[0087] In this step, a precision source meter or voltage measurement module is used to provide driving current to the LED chip and monitor the voltage across both ends in real time. The operating voltage is recorded to verify whether the electrical characteristics meet the design specifications, thereby ensuring the electrical performance and reliability of the device under rated conditions.

[0088] like Figure 9 As shown, in this embodiment, the method further includes: S71: Obtain the brightness and color temperature of each LED chip after packaging; In this step, the illuminance output and corresponding color temperature of each packaged LED chip under standard driving conditions are measured using an automated test bench or a photometric and colorimetric integrated machine. The test data is then recorded in association with the chip and batch information to reflect the brightness and color characteristics of each device. S72: Obtain brightness and color temperature grading standards; In this step, a grading standard table is formed based on the brightness level intervals and color temperature tolerance ranges pre-defined by customers or industry standards, and loaded into the sorting system as a benchmark for subsequent sorting; S73: Classifying the packaged LED chips according to the brightness and color temperature classification standards and the brightness and color temperature of each LED chip.

[0089] In this step, the sorting system compares the measured brightness and color temperature of each chip with the grading standards, automatically classifies the chips into different bins according to the grade range, and outputs the sorting results to guide subsequent packaging and shipping logistics.

[0090] like Figure 10 As shown, in this embodiment, the method further includes: S81: Acquire continuous lighting environment simulation parameters; brightness and color temperature of each LED chip after packaging; In this step, key parameters (such as drive current waveform, operating temperature, and heat dissipation conditions) for simulating a continuous lighting environment are obtained from test specifications or customer requirements to reproduce real-world usage scenarios on the test bench.

[0091] S82: Controlling the packaged LED chips to light up continuously according to the simulation parameters; In this step, a continuous lighting test is performed on the packaged LED chip in a controllable power supply and environmental chamber based on the obtained simulation parameters to ensure that it continuously emits light and operates stably under the preset operating conditions. S83: Detect the attenuation rate and lifespan of the LED light emitting chip.

[0092] In this step, the output luminous flux data is collected regularly and the power attenuation curve is recorded. The chip light decay rate is analyzed and the accelerated life test results are calculated to evaluate the service life and reliability of the device.

[0093] The above is a detailed introduction to the LED light emitting chip packaging method provided by the embodiment of the present invention.

[0094] It should be understood that the present invention is not limited to the specific configurations and processes described above and illustrated in the figures. For the sake of brevity, a detailed description of known methods is omitted. In the above embodiments, several specific steps are described and illustrated as examples. However, the method of the present invention is not limited to the specific steps described and illustrated. Those skilled in the art may make various changes, modifications, and additions, or change the order of the steps after understanding the spirit of the present invention.

[0095] The functional blocks shown in the block diagrams described above can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, they may be, for example, electronic circuits, application-specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, and the like. When implemented in software, the elements of the present invention are programs or code segments used to perform the desired tasks. Programs or code segments may be stored in a machine-readable medium or transmitted via a data signal carried in a carrier wave over a transmission medium or communication link. "Machine-readable medium" may include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROMs, flash memory, erasable ROMs (EROMs), floppy disks, CD-ROMs, optical disks, hard disks, fiber optic media, radio frequency (RF) links, and the like. Code segments may be downloaded via a computer network such as the Internet or an intranet.

[0096] It should also be noted that the exemplary embodiments described herein describe methods or systems based on a series of steps or devices. However, the present invention is not limited to the order of the steps described above. In other words, the steps may be performed in the order described in the embodiments, or in a different order, or several steps may be performed simultaneously.

[0097] The above description is only a specific embodiment of the present invention. Those skilled in the art will clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the protection scope of the present invention is not limited to this. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention.

Claims

1. A method for packaging an LED light-emitting chip, characterized in that: The method comprises the following steps: S1: Select LED light-emitting chips according to user needs; S2: Cleaning and wafer expansion of the chip carrier; S3: Fixing the LED light-emitting chip on the pad of the chip carrier; S4: Cover the LED light-emitting chip with fluorescent glue; S5: Curing the fluorescent glue.

2. The LED light emitting chip packaging method according to claim 1, characterized in that: The step S1: selecting LED light-emitting chips according to user needs also includes: S11: Obtain the expected luminous color according to user needs; S12: Determining a light-emitting wavelength band of the LED light-emitting chip according to the expected light-emitting color, wherein the light-emitting wavelength band is between 447.5 nm and 460 nm; S13: Screening LED light-emitting chips according to the light-emitting wavelength band.

3. The LED light emitting chip packaging method according to claim 2, characterized in that: The step S2: cleaning and expanding the chip carrier further includes: S21: Determine ultrasonic cleaning parameters according to cleaning requirements, wherein the cleaning parameters include ultrasonic frequency, power density, temperature, and time; S22: placing the chip carrier into the ultrasonic tank and completely immersing the chip carrier in the cleaning solution; S23: Turn on ultrasonic oscillation and perform ultrasonic cleaning on the chip carrier according to ultrasonic cleaning parameters; S24: After cleaning, the chip carrier is dried.

4. The LED light emitting chip packaging method according to claim 1, characterized in that: Said S2: cleaning and expanding the chip carrier further comprises: S25: Place the wafer with the film material attached on the wafer expansion machine stage; S26: Performing preliminary stretching to stretch the film material to a first chip spacing; S27: performing main stretching to stretch the film material to a second chip pitch, wherein the second chip pitch is greater than the first chip pitch.

5. The LED light emitting chip packaging method according to claim 1, characterized in that: The step S3: fixing the LED light emitting chip on the pad of the chip carrier also includes: S31: Apply solder paste to a first preset position of the chip carrier; S32: Get the current position of the LED light emitting chip; S33: moving the picking component to the current position to pick up the LED light-emitting chip; S34: Get pad position; S35: Control the pickup component to move the LED light emitting chip and fix the LED light emitting chip at the soldering pad position; S36: The solder paste is solidified by reflow soldering to form a solder joint between the LED light emitting chip and the solder pad.

6. The LED light emitting chip packaging method according to claim 1, characterized in that: The step S4: covering the LED chip with fluorescent glue further includes: S41: selecting a phosphor corresponding to the luminescent color according to the luminescent color, wherein the phosphor includes a red phosphor and a yellow phosphor, wherein the mass percentage of the yellow phosphor is 85% to 90%, and the mass percentage of the red phosphor is 10% to 15%; S42: mixing the phosphor and the silica gel to obtain a dispensing material; S43: Determine dispensing parameters according to the light output angle; S44: Control the dispensing equipment according to the dispensing parameters to cover the dispensing material on the LED light-emitting chip.

7. The LED light emitting chip packaging method according to claim 1, characterized in that: The step S5: curing the fluorescent glue further includes: S51: Preliminary curing of the fluorescent glue at a first temperature, wherein the preliminary curing time is 1 hour; S52: Post-curing the fluorescent glue at a second temperature, the post-curing time being 4 hours, and the second temperature being higher than the first temperature.

8. The LED light emitting chip packaging method according to claim 1, characterized in that: The method further comprises: S61: Detecting the luminous flux of the packaged LED chip; S62: Detecting the color temperature of the packaged LED chip; S63: Detecting the voltage of the packaged LED chip.

9. The LED light emitting chip packaging method according to claim 8, characterized in that: The method further comprises: S71: Obtain the brightness and color temperature of each LED chip after packaging; S72: Obtain brightness and color temperature grading standards; S73: Classifying the packaged LED chips according to the brightness and color temperature classification standards and the brightness and color temperature of each LED chip.

10. The LED light emitting chip packaging method according to any one of claims 1 to 9, characterized in that: The method further comprises: S81: Acquire continuous lighting environment simulation parameters; S82: Controlling the packaged LED chips to light up continuously according to the simulation parameters; S83: Detect the attenuation rate and lifespan of the LED light emitting chip.

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