Display panel and display device

Abstract

The invention relates to a display panel and a display device. The display panel comprises a substrate layer and a plurality of pixel units distributed on the substrate layer in an array mode, a light conversion assembly and an electrochromic layer are arranged between every two adjacent pixel units, and the light conversion assemblies are used for converting light energy into electric energy; the display panel further comprises a packaging layer, the electrochromic layer is located on the side, close to the substrate layer, of the packaging layer, the light conversion assemblies are located on the side, close to the packaging layer, of the substrate layer, and one light conversion assembly and one electrochromic layer are oppositely arranged. A light-emitting layer is arranged between every two adjacent photoelectric conversion assemblies. When the electrochromic layer is in the peep-proof mode, light rays obliquely emitted from the light-emitting layer act on the electrochromic layer and are reflected back to the photoelectric conversion assembly, so that the display panel has a narrow visual angle relative to a user. When the electrochromism layer is in a conventional display mode, external incident ambient light is emitted to the photoelectric conversion assembly through the electrochromism layer.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] In the field of organic light-emitting diode (OLED) display technology, due to its self-luminous, thin and flexible characteristics, OLED technology has been widely used in various display terminals such as mobile phones, TVs, wearable devices, and continues to develop in the direction of high resolution and high color reproduction. With the diversification of user usage scenarios, the demand for OLED display viewing angle adjustment function is becoming increasingly prominent. In sharing scenarios, wide viewing angle display is required, while in open scenarios involving privacy protection, narrow viewing angle anti-peeping display function is urgently needed.

[0003] Currently, a common way to achieve privacy protection on OLED displays is to attach a privacy film to the surface of the display device. This privacy film uses a special optical structure to block light at a wide viewing angle, thereby limiting the visible range at non-normal viewing angles and achieving a privacy protection effect. However, this privacy film-based solution has obvious drawbacks. Due to the privacy film's absorption and reflection of light, the display brightness is significantly reduced. To obtain a clear visual image, users are forced to increase the brightness setting of the display device, which significantly increases the display device's power consumption, affecting the display quality and reducing the device's battery life. It is difficult to meet users' demand for efficient and energy-saving displays. Summary of the Invention

[0004] The present application provides a display panel to solve the technical problem in the prior art that the display panel with anti-peeping function absorbs and reflects light, resulting in a significant reduction in display brightness.

[0005] The present invention provides a display panel, which includes: a substrate layer and a plurality of pixel units arrayed on the substrate layer, a photoelectric conversion component and an electrochromic layer between two adjacent pixel units, and the photoelectric conversion component is used to convert light energy into electrical energy; the display panel also includes an encapsulation layer, the electrochromic layer is located on the side of the encapsulation layer close to the substrate layer, the photoelectric conversion component is located on the side of the substrate layer close to the encapsulation layer, and one photoelectric conversion component is arranged opposite to one electrochromic layer; a light-emitting layer is also included between two adjacent photoelectric conversion components; when the electrochromic layer is in an anti-peeping mode, light obliquely emitted through the light-emitting layer acts on the electrochromic layer and is reflected back to the photoelectric conversion component, so that the display panel has a narrow viewing angle relative to the user; when the electrochromic layer is in a normal display mode, external ambient light passes through the electrochromic layer and is emitted to the photoelectric conversion component.

[0006] The electrochromic layer comprises an upper electrochromic layer close to the encapsulation layer and a lower electrochromic layer close to the light conversion layer, and an electrochromic electrode layer is provided between the upper electrochromic layer and the lower electrochromic layer;

[0007] When the anti-peeping mode is on, the upper electrochromic layer displays black to absorb ambient light, and the lower electrochromic layer displays silvery white to reflect light emitted from the side of the display screen;

[0008] When the normal mode is turned on, the upper electrochromic layer and the lower electrochromic layer both display a transparent color, and external ambient light is incident on the photoelectric conversion component to convert light energy into electrical energy, and the light emitted from the side of the display screen can be emitted normally.

[0009] In which, in the direction from the packaging layer to the substrate layer, the photoelectric conversion component includes an anti-reflection film layer, N-type silicon and P-type silicon. When the electrochromic layer is in anti-peep mode, the light obliquely emitted through the light-emitting layer acts on the electrochromic layer and is reflected back to the anti-reflection film layer, so that the display panel has a narrow viewing angle relative to the user.

[0010] Among them, the photoelectric conversion component also includes a positive electrode and a negative electrode, the positive electrode is located on the side of the P-type silicon close to the substrate layer, and the negative electrode is located on the side of the N-type silicon close to the encapsulation layer. The photoelectric conversion component is connected to a supercapacitor through the positive electrode and the negative electrode. The supercapacitor is used to store electrical energy. The supercapacitor is connected to an inverter circuit, and the inverter circuit is used to provide electrical energy to the light-emitting layer.

[0011] In which, the pixel unit also includes an anode layer, the anode layer is covered on the side of the substrate layer close to the packaging layer, and the positive electrode is embedded in the anode layer; the pixel unit also includes a filling layer, the filling layer is covered on the side of the packaging layer close to the substrate layer, and the electrochromic layer is embedded in the filling layer.

[0012] The pixel unit further includes a cathode layer, which is covered on a side of the filling layer close to the substrate layer, and the negative electrode is embedded in the cathode layer.

[0013] The pixel unit further includes an electron injection layer and a hole injection layer, the electron injection layer is covered between the cathode layer and the light-emitting layer, the hole injection layer is covered between the light-emitting layer and the anode layer, and the P-type silicon and the N-type silicon are embedded in the electron injection layer, the light-emitting layer and the hole injection layer.

[0014] The anti-reflection film layer and the negative electrode are located in the same film layer, and the anti-reflection film layer and the negative electrode together constitute a film layer structure for covering the upper surface of the N-type silicon.

[0015] The anti-reflection film layer and the negative electrode are directly spliced ​​or spliced ​​at intervals to form a film layer structure for covering the upper surface of the N-type silicon.

[0016] The present invention also provides a display device comprising the above-mentioned display panel.

[0017] The above technical solution provided by the embodiment of the present application has the following advantages compared with the prior art:

[0018] The display panel and display device provided in the embodiments of the present application can utilize an electrochromic layer to realize switching between an anti-peeping mode and a normal display mode of the display panel. In combination with a photoconversion component and an electrochromic layer added between two adjacent pixel units, when the electrochromic layer is in the anti-peeping mode, light emitted obliquely through the light-emitting layer acts on the electrochromic layer and is reflected back to the photoelectric conversion component, so that the display panel has a narrow viewing angle relative to the user; when the electrochromic layer is in the normal display mode, external ambient light passes through the electrochromic layer and hits the photoelectric conversion component. In this way, a display panel with an anti-peeping function can be obtained. At the same time, the photoelectric conversion component can convert the absorbed light into electrical energy, which can further supply the display application of the display panel, ensuring the normal application of the display brightness. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0021] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings. These exemplifications do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements. Unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0022] Figure 1 A schematic diagram of the film structure of a display panel provided in an embodiment of the present application when in anti-peeping mode;

[0023] Figure 2 A schematic diagram of the film structure of the display panel provided in an embodiment of the present application when in a normal display mode;

[0024] Figure 3 A schematic diagram of the hardware structure of a display panel provided in an embodiment of the present application;

[0025] Figure 4 A schematic diagram of the film structure of another display panel provided in an embodiment of the present application when in anti-peeping mode;

[0026] Figure 5 for Figure 4 Schematic diagram of the membrane structure when the display panel is in normal display mode.

[0027] Description of reference numerals:

[0028] 1. Substrate layer; A. Pixel unit; 2. Light conversion component; 21. Anti-reflection film layer; 22. N-type silicon; 23. P-type silicon; 24. Positive electrode; 25. Negative electrode; 3. Electrochromic layer; 31. Upper electrochromic layer; 32. Lower electrochromic layer; 33. Electrochromic electrode; 4. Encapsulation layer; 5. Light-emitting layer; 6. Anode layer; 7. Filling layer; 8. Cathode layer; 9. Electron injection layer; 10. Hole injection layer; B. Supercapacitor; C. Inverter circuit. DETAILED DESCRIPTION

[0029] To make the purpose, technical solutions, and advantages of the embodiments of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0030] The disclosure below provides many different embodiments or examples for implementing different configurations of the present invention. To simplify the disclosure of the present invention, the components and configurations of specific examples are described below. Of course, these are merely examples and are not intended to limit the present invention. In addition, the present invention may repeat reference numerals and / or letters in different examples. Such repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or configurations discussed.

[0031] For ease of description, spatially relative terms may be used herein to describe the relative position or movement of one element or feature relative to another element or feature as shown in the figures, such as "inside", "outside", "inside", "outside", "below", "beneath", "above", "above", "front", "back", etc. Such spatially relative terms are intended to include different orientations of the device in use or operation other than the orientation depicted in the figures. For example, if the device in the figures undergoes a position flip or a change in posture or a change in motion state, then these directional indications will also change accordingly. For example, an element described as "below" or "below" another element or feature will then be oriented as "above" or "above" another element or feature. Thus, the example term "below" can include both above and below orientations. The device can be oriented otherwise (rotated 90 degrees or in other orientations) and the spatially relative descriptions used herein have been interpreted accordingly.

[0032] Currently, a common method for implementing privacy protection on OLED displays is to apply a privacy film to the display surface. This film uses a special optical structure to block light at wide viewing angles, thereby limiting the visible range at non-normal viewing angles and achieving a privacy protection effect. However, this privacy film-based solution has obvious drawbacks: the film's absorption and reflection of light significantly reduces display brightness.

[0033] To alleviate the above problems, refer to Figure 1-Figure 5 The embodiments of the present application provide a display panel and a display device, which can absorb light obliquely emitted from the light-emitting layer 5 to the encapsulation layer 4 into the display panel through reflection, and obtain electrical energy through the photoelectric conversion component. The electrical energy can be used for normal display applications of the display panel, and can ensure that the display brightness of the display panel remains within a normal range.

[0034] A display panel provided in an embodiment of the present application includes: a substrate layer 1 and a plurality of pixel units A arrayed on the substrate layer 1, with a photoelectric conversion component 2 and an electrochromic layer 3 provided between two adjacent pixel units A, wherein the photoelectric conversion component is used to convert light energy into electrical energy; the display panel also includes an encapsulation layer 4, the electrochromic layer 3 is located on a side of the encapsulation layer 4 close to the substrate layer 1, the photoelectric conversion component 2 is located on a side of the substrate layer 1 close to the encapsulation layer 4, and one photoelectric conversion component 2 is arranged opposite to one electrochromic layer 3; a light-emitting layer 5 is also provided between two adjacent photoelectric conversion components; when the electrochromic layer 3 is in an anti-peeping mode, light obliquely emitted through the light-emitting layer 5 acts on the electrochromic layer 3 and is reflected back to the photoelectric conversion component, so that the display panel has a narrow viewing angle relative to the user; when the electrochromic layer 3 is in a normal display mode, external ambient light passes through the electrochromic layer 3 and is emitted to the photoelectric conversion component.

[0035] In this way, the electrochromic layer 3 can be used to switch the display panel between an anti-peeping mode and a normal display mode. Combined with a photoconversion component 2 and an electrochromic layer 3 added between two adjacent pixel units A, when the electrochromic layer 3 is in the anti-peeping mode, light emitted obliquely through the light-emitting layer 5 acts on the electrochromic layer 3 and is reflected back to the photoelectric conversion component, so that the display panel has a narrow viewing angle relative to the user; when the electrochromic layer 3 is in the normal display mode, external ambient light passes through the electrochromic layer 3 and hits the photoelectric conversion component. In this way, a display panel with an anti-peeping function can be obtained. At the same time, the photoelectric conversion component can convert the absorbed light into electrical energy, which can further supply the display application of the display panel, ensuring the normal application of display brightness.

[0036] It should be noted that in anti-peeping mode, the electrochromic layer 3 switches to a highly reflective state, mirror-reflecting the light emitted obliquely from the luminescent layer 5 back to the photoelectric conversion component, creating a "light path blocking" mechanism. In normal display mode, the electrochromic layer 3 switches to a highly transparent state.

[0037] Specifically, a multifunctional integrated system is constructed by innovatively placing a photoelectric conversion component and an electrochromic layer 3 between pixel units A of substrate layer 1. The electrochromic layer 3 enables intelligent switching between anti-peeping mode and conventional display mode. In anti-peeping mode, its highly reflective properties reflect oblique light from the light-emitting layer 5 back to the photoelectric conversion component, blocking the light path and achieving a narrow viewing angle, effectively protecting the screen information from sideways viewing. In conventional display mode, the electrochromic layer 3 switches to a highly transparent state, allowing ambient light to penetrate unimpeded to the photoelectric conversion component, efficiently converting light energy into electrical energy to power the display panel, reducing energy consumption while ensuring stable display brightness. Furthermore, the sandwich layout of the electrochromic layer 3 and the photoelectric conversion component, combined with the protection of the encapsulation layer 4, not only improves structural stability and material lifespan, but also achieves a high degree of integration of functional modules, avoiding obstruction of the display area. Furthermore, it is compatible with existing TFT array processes, significantly reducing production costs. This combination of technological innovation, practical value, and commercial feasibility demonstrates significant competitive advantages in multiple scenarios, including mobile devices, in-vehicle central control systems, and public terminals.

[0038] Considering that the electrochromic layer 3 is beneficial to the color display scheme in different situations, in the display panel provided in the embodiment of the present application, the electrochromic layer 3 includes an upper electrochromic layer 31 close to the encapsulation layer 4 and a lower electrochromic layer 32 close to the photoconversion layer, and an electrochromic electrode 33 layer is arranged between the upper electrochromic layer 31 and the lower electrochromic layer 32; when the anti-peep mode is turned on, the upper electrochromic layer 31 displays black for absorbing ambient light, and the lower electrochromic layer 32 displays silvery white for reflecting light emitted from the side of the display screen; when the normal mode is turned on, the upper electrochromic layer 31 and the lower electrochromic layer 32 both display transparent colors, and the external ambient light is incident on the photoelectric conversion component for converting light energy into electrical energy, and the light emitted from the side of the display screen can be emitted normally.

[0039] When the display panel is in anti-peep mode, the electrochromic electrode 33 is energized to turn the upper electrochromic layer 31 black to absorb ambient light and prevent ambient light reflection from affecting the display effect; the lower electrochromic layer 32 turns white to reflect the light from the side of the display screen, which is then emitted to the photoelectric conversion component with a spacing design, and directly converts the light energy into electrical energy through the photoelectric effect. The electrical energy generated by the photoelectric conversion component is transmitted through the positive and negative electrodes 25 connecting wires at the edge of the AA area to the supercapacitor B placed at the edge of the display screen. The supercapacitor B is green and environmentally friendly, has a wide operating temperature range, and can meet the working environment of the display screen. The electrical energy generated by the photoelectric conversion component is direct current. When the supercapacitor B is working, it needs to be converted into alternating current through the inverter circuit C at the edge of the display. The generated electrical energy can be used for the electroluminescence of the display panel, and the light blocked by the anti-peep mode is used to reduce the power consumption of the display panel.

[0040] When the display panel is in open mode, the electrochromic electrode 33 stops applying pressure, and the upper electrochromic layer 31 and the lower electrochromic layer 32 are both transparent layers. The light emitted by the display panel can be emitted from the display panel normally. At the same time, the external ambient light shines on the panel, passes through the transparent electrochromic material, is absorbed by the photoelectric conversion component and converted into electrical energy, which is applied to the electroluminescence of the display panel, reducing the power consumption of the display panel.

[0041] For example, two electrochromic materials are coated on the upper and lower sides of the electrochromic electrode 33. The electrochromic electrode 33 can be made of transparent ITO. When a voltage is applied to the upper electrochromic layer 31, it turns black, which absorbs light. Examples include a mixture of poly (3-methylthiophene) (red) and PEDOT (blue), Prussian blue, and its derivatives. When a voltage is applied to the lower electrochromic layer 32, it turns white, which reflects light. Examples include titanium oxide, niobium tungsten oxide, and other materials.

[0042] Considering the scheme of the photoelectric conversion component converting light energy into electrical energy, in the display panel provided by the embodiment of the present application, the encapsulation layer 4 points in the direction of the substrate layer 1, and the photoelectric conversion component includes an anti-reflection film layer 21, N-type silicon 22 and P-type silicon 23. When the electrochromic layer 3 is in the anti-peep mode, the light obliquely emitted through the light-emitting layer 5 acts on the electrochromic layer 3 and is reflected back to the anti-reflection film layer 21, so that the display panel has a narrow viewing angle relative to the user.

[0043] In this way, the photoelectric conversion component adopts a classic PN junction structure, consisting of an anti-reflection film layer 21, N-type silicon 22, and P-type silicon 23. The anti-reflection film layer 21 improves the efficiency of light entry by reducing the reflectivity of light; the PN junction formed by the N-type silicon 22 and the P-type silicon 23 is the core of the photoelectric conversion. When light is irradiated, the photon energy excites electron-hole pairs. Under the action of the built-in electric field of the PN junction, the electrons and holes separate and move to the sides, thereby generating current. In the anti-peeping mode, the electrochromic layer 3 is transformed into a high-reflection state, and the light emitted obliquely from the light-emitting layer 5 is reflected by it and enters the photoelectric conversion component through the anti-reflection film layer 21, triggering the photoelectric effect to generate electrical energy; in the normal display mode, the electrochromic layer 3 switches to a high-transmittance state, and the ambient light directly passes through. The conversion of light energy into electrical energy is also achieved by the photoelectric conversion component.

[0044] For example, when light strikes a PN junction, the photon energy excites electrons in the semiconductor material from the valence band to the conduction band, forming electron-hole pairs. Under the action of the PN junction's built-in electric field, these carriers migrate toward the N region and the holes toward the P region, creating a potential difference across the PN junction known as the photovoltage. When an external circuit is connected, the electrons flow, forming an electric current, converting light energy into electrical energy.

[0045] Furthermore, the display panel provided by the embodiments of the present application not only achieves a highly efficient privacy protection function, with the reflective properties of the electrochromic layer 3 reflecting light back to the photoelectric conversion component, blocking side views, but also enables the photoelectric conversion component to continuously convert absorbed light into electrical energy to power the display panel, extending the device's battery life and achieving both energy conservation and practical benefits. Furthermore, the combination of the anti-reflection film layer 21 and the PN junction further enhances photoelectric conversion efficiency, ensuring a stable power supply and improving the overall performance of the display panel.

[0046] Considering the display application scheme of using the electric energy converted by the photoelectric conversion component for the display panel, in the display panel provided in the embodiment of the present application, the photoelectric conversion component also includes a positive electrode 24 and a negative electrode 25, the positive electrode 24 is located on the side of the P-type silicon 23 close to the substrate layer 1, and the negative electrode 25 is located on the side of the N-type silicon 22 close to the encapsulation layer 4, the photoelectric conversion component is connected to the supercapacitor B through the positive electrode 24 and the negative electrode 25, the supercapacitor B is used to store electric energy, the supercapacitor B is connected to the inverter circuit C, and the inverter circuit C is used to provide electric energy to the light-emitting layer 5.

[0047] In this way, the anti-reflection film layer 21, N-type silicon 22 and P-type silicon 23 in the photoelectric conversion component are excited to generate electron-hole pairs under the irradiation of light, and the charge separation is achieved through the built-in electric field of the PN junction to generate current. The positive electrode 24 and the negative electrode 25 are respectively arranged on both sides of the P-type silicon 23 and the N-type silicon 22, and the generated current is extracted and connected to the supercapacitor B through the circuit for storage. Supercapacitor B can efficiently collect and temporarily store electrical energy due to its high power density and fast charging and discharging characteristics. When the display panel needs power supply, supercapacitor B converts the stored direct current into alternating current suitable for the light-emitting layer 5 through the inverter circuit C, provides stable power for the light-emitting layer 5, and drives the display panel to work normally. Whether it is the light reflected back in the anti-peeping mode or the ambient light passing through in the normal display mode, the complete conversion from light energy to display power can be achieved through this path.

[0048] Furthermore, through the cooperation of the photoelectric conversion component and supercapacitor B, the dependence on external power supply is greatly reduced, effectively extending the battery life of the device, which is particularly suitable for mobile devices and outdoor display scenarios. In addition, to ensure display stability, the power supply system composed of supercapacitor B and inverter circuit C can quickly respond to the power demand of the display panel, avoiding brightness flickering or display abnormalities caused by voltage fluctuations, and improving the user's visual experience. Further, reducing energy consumption and costs, and reducing the use of external power supply not only conforms to the green energy-saving trend, but also reduces equipment operating costs, while simplifying circuit design, reducing the complexity of the manufacturing process, and enhancing product market competitiveness.

[0049] Considering the location of the positive electrode 24 in the photoelectric conversion component, in the display panel provided by the embodiment of the present application, the pixel unit A further includes an anode layer 6, which is disposed on the side of the substrate layer 1 close to the encapsulation layer 4, and the positive electrode 24 is embedded in the anode layer 6.

[0050] In this way, the anode layer 6 is covered on the side of the substrate layer 1 close to the encapsulation layer 4, serving as a current input channel for the pixel to emit light; the positive electrode 24 is embedded in the anode layer 6 and is directly connected to the P-type silicon 23 to form a tight electrical connection. When the N-type silicon 22 and P-type silicon 23 in the photoelectric conversion component generate electron-hole pairs under light excitation, after separation through the PN junction, the positive electrode 24 efficiently extracts the generated positive charge (holes) and quickly transmits them to the pixel circuit through the anode layer 6. This embedded structure shortens the transmission path of electrical energy from the photoelectric conversion component to the pixel unit A, reduces the resistance loss during the transmission process, and enables electrical energy to be supplied to the light-emitting layer 5 more quickly and stably, and cooperates with the supercapacitor B and the inverter circuit C to drive the display panel to display normally. At the same time, when switching between anti-peeping and normal display modes, this structure can ensure that the electrical energy converted from light energy is fully utilized.

[0051] Furthermore, it can effectively reduce power loss and improve the overall efficiency of photoelectric conversion components; enhance the stability and reliability of the display panel, and stable power transmission avoids uneven brightness or flickering problems caused by voltage drop, thereby improving the display quality; the embedded structure reduces the risk of contact between the electrode and the external environment, reduces potential failures such as oxidation and corrosion, and extends the service life of the display panel; at the same time, it simplifies the manufacturing process and cost. The structure is compatible with existing thin film deposition and photolithography processes, and does not require additional complex packaging or connection steps, thereby reducing production complexity and manufacturing costs, facilitating large-scale industrial applications, and enhancing the product's technical competitiveness in the market.

[0052] Considering the position scheme of the electrochromic layer 3, in the display panel provided in the embodiment of the present application, the pixel unit A further includes a filling layer 7, which is covered on the side of the encapsulation layer 4 close to the substrate layer 1, and the electrochromic layer 3 is embedded in the filling layer 7.

[0053] In this way, the filling layer 7 is covered on the side of the encapsulation layer 4 close to the substrate layer 1, providing a stable embedding space for the electrochromic layer 3. When an electric field is applied, the electrochromic layer 3 can switch between the anti-peeping mode and the conventional display mode; in the anti-peeping mode, the electrochromic layer 3 is in a highly reflective state, reflecting the oblique light from the light-emitting layer 5 back to the photoelectric conversion component to achieve narrow-viewing angle anti-peeping, and in the conventional display mode, it turns into a highly transmittance state, allowing ambient light to penetrate into the photoelectric conversion component for electrical energy conversion.

[0054] Furthermore, the filling layer 7 provides physical support and protection for the electrochromic layer 3, preventing it from deformation or displacement during the electric field switching process, while isolating it from external water and oxygen corrosion, thereby improving the stability of the electrochromic layer 3. The overall structural compactness of the display panel is optimized, and the embedded method avoids mutual interference between the electrochromic layer 3 and other functional layers, ensuring the efficient coordinated operation of the anti-peep and photoelectric conversion functions, and is compatible with existing panel manufacturing processes without the need for adding complex processes.

[0055] Considering the position scheme of the negative electrode 25 in the photoelectric conversion component, in the display panel provided in the embodiment of the present application, the pixel unit A also includes a cathode layer 8, the cathode layer 8 is covered on the side of the filling layer 7 close to the substrate layer 1, and the negative electrode 25 is embedded in the cathode layer 8.

[0056] Thus, cathode layer 8 overlies the side of filling layer 7 near substrate layer 1, serving as the pixel current output channel. Negative electrode 25 is embedded within it and directly connected to N-type silicon 22, forming a stable electrical connection. When light strikes the photoelectric conversion component, N-type silicon 22 and P-type silicon 23 are excited to generate electron-hole pairs. After separation at the PN junction, negative electrode 25 efficiently conducts the electrons, transmitting them through cathode layer 8 to the subsequent energy storage and drive circuits. It then collaborates with positive electrode 24 to achieve electrical energy output, working in conjunction with supercapacitor B and inverter circuit C to drive the display panel's light-emitting layer 5. This structure ensures stable transmission of the electrical energy generated by photoelectric conversion in both anti-peeping and normal display modes.

[0057] Furthermore, the efficiency of power transmission can be greatly improved. The integrated design of the negative electrode 25 and the cathode layer 8 shortens the power transmission path, reduces power loss, and enhances the stability of the display panel. Stable electron transmission avoids display anomalies caused by voltage fluctuations. The embedded structure isolates external environmental interference, reduces the risk of electrode oxidation, and extends the service life of the panel. No additional complex process is required, which reduces production complexity and cost and facilitates large-scale industrialization.

[0058] Considering the position scheme of the P-type silicon 23 and the N-type silicon 22 in the photoelectric conversion component, in the display panel provided in the embodiment of the present application, the pixel unit A also includes an electron injection layer 9 and a hole injection layer 10, the electron injection layer 9 is covered between the cathode layer 8 and the light-emitting layer 5, the hole injection layer 10 is covered between the light-emitting layer 5 and the anode layer 6, and the P-type silicon 23 and the N-type silicon 22 are embedded in the electron injection layer 9, the light-emitting layer 5 and the hole injection layer 10.

[0059] In this way, the electron injection layer 9 is covered between the cathode layer 8 and the light-emitting layer 5, the hole injection layer 10 is covered between the light-emitting layer 5 and the anode layer 6, and the P-type silicon 23 and the N-type silicon 22 are embedded in the electron injection layer 9, the light-emitting layer 5 and the hole injection layer 10, forming a close functional connection; when irradiated with light, the P-type silicon 23 and the N-type silicon 22 are excited to generate electron-hole pairs. After separation through the PN junction, the electrons are efficiently transmitted to the light-emitting layer 5 through the electron injection layer 9, and the holes are quickly transported to the light-emitting layer 5 through the hole injection layer 10. The two are recombined in the light-emitting layer 5 to emit light. At the same time, the charges that do not participate in the light emission can be extracted and stored and utilized through the electrodes, thereby realizing the coordinated operation of photoelectric conversion and display drive.

[0060] Furthermore, the photoelectric conversion efficiency can be greatly improved. The embedded layout of P-type silicon 23 and N-type silicon 22 shortens the charge transfer path and reduces the transmission loss. Display stability and image quality are enhanced. The optimized charge transfer path ensures the uniformity of charge injection into the light-emitting layer 5, effectively avoiding problems such as uneven brightness and color deviation, and significantly improving the display quality of the picture. Device reliability is enhanced. P-type silicon 23 and N-type silicon 22 are wrapped in multiple layers of functional materials, which reduces direct contact with the external environment and reduces the risk of oxidation and corrosion. The manufacturing process is simplified. The structure is compatible with existing thin film deposition and photolithography processes, and there is no need to add complex processes.

[0061] Considering one of the forming schemes of the anti-reflection film layer 21 and the negative electrode 25, in the display panel provided in the embodiment of the present application, the anti-reflection film layer 21 and the negative electrode 25 are located in the same film layer, and the anti-reflection film layer 21 and the negative electrode 25 together constitute a film layer structure for covering the upper surface of the N-type silicon 22.

[0062] In this way, the negative electrode 25 acts as a charge extraction channel, forming a direct electrical connection with the N-type silicon 22. After the photoelectric effect generates charge, the electrons can be quickly extracted and transferred to the supercapacitor B for storage through the subsequent circuit, and then powered by the inverter circuit C to the light-emitting layer 5. This integrated film structure forms a coherent path for light absorption, charge generation, and transmission. In the display panel's anti-peep mode, light reflected from the electrochromic layer 3 and ambient light transmitted in the normal display mode can both efficiently complete photoelectric conversion and power supply.

[0063] Furthermore, the photoelectric conversion efficiency can be improved. The anti-reflection film layer 21 reduces the reflectivity of light, and combined with the efficient charge transfer of the negative electrode 25, the overall photoelectric conversion efficiency is improved, and the self-power supply capacity of the panel is enhanced; the manufacturing process and cost are simplified, and the anti-reflection film layer 21 and the negative electrode 25 are integrated into the same film layer, which reduces the one-time film forming process, reduces the production complexity, shortens the manufacturing cycle, and reduces the production cost; enhances structural stability, and the integrated film layer reduces the interface between layers, reduces the stress concentration and structural failure risk caused by multi-layer stacking, and improves the long-term reliability of the display panel, showing outstanding technical advantages and industrialization potential in the fields of smart terminals, vehicle-mounted displays, etc.

[0064] Considering the second forming scheme of the anti-reflection film layer 21 and the negative electrode 25 , in the display panel provided in the embodiment of the present application, the anti-reflection film layer 21 and the negative electrode 25 are directly spliced ​​or spliced ​​at intervals to jointly form a film layer structure for covering the upper surface of the N-type silicon 22 .

[0065] In this way, the display panel constructs a composite film structure with both optical and electrical properties through a molding scheme of directly splicing or splicing the anti-reflection film layer 21 and the negative electrode 25 at intervals; the anti-reflection film layer 21 can reduce the reflection loss of light on the surface of the N-type silicon 22, reduce the light reflectivity, and significantly improve the absorption efficiency of the N-type silicon 22 for light, thereby increasing the number of electron-hole pairs generated by the photoelectric conversion component; and the negative electrode 25 ensures the high efficiency of charge extraction. The film structure formed by the splicing of the two not only reduces the energy loss caused by light reflection, but also ensures the rapid transmission of electrons, thereby improving the photoelectric conversion efficiency compared to the traditional structure, and significantly enhancing the self-power supply capacity of the panel. At the same time, the splicing structure can flexibly adjust the distribution area of ​​the anti-reflection film layer 21 and the negative electrode 25, optimize the balance between optical and electrical performance, and be compatible with the needs of different scenarios; furthermore, this solution does not require a complex integrated film-forming process, and can use existing photolithography and deposition technologies to form in steps, reducing process difficulty and equipment costs, and reducing the risk of interlayer stress concentration, thereby improving the stability of the film structure and the long-term reliability of the display panel, providing technical feasibility and cost advantages for the large-scale application of display panels in mobile terminals, outdoor displays and other fields.

[0066] An embodiment of the present application further provides a display device including the above-mentioned display panel, which can achieve all the effects of the display panel and will not be described in detail here.

[0067] In order to better understand the structure of the display panel and the display device provided in the embodiments of the present application, the following examples are now described:

[0068] The present embodiment incorporates a photoelectric conversion component into a display panel. This component consists of a positive electrode 24, a negative electrode 25, and P-type and N-type silicon 22 between the two electrodes. The negative electrode 25 is not designed as a full-surface structure, but rather has an anti-reflection film 21 intermittently positioned therebetween. The primary function of the anti-reflection film is to reduce or eliminate reflected light from the optical surface, thereby increasing the light transmittance of these photoelectric conversion components. Anti-reflection films can typically be prepared using methods such as sol-gel, sputtering, and chemical vapor deposition. Porous silica anti-reflection films or silicon nitride anti-reflection films are commonly used. When light strikes a PN junction, the photon energy excites electrons in the semiconductor material from the valence band to the conduction band, forming electron-hole pairs. Under the influence of the PN junction's built-in electric field, these carriers migrate toward the N region and the holes toward the P region, creating a potential difference across the PN junction, known as the photogenerated voltage. When connected to an external circuit, the electron flow generates a current, converting light energy into electrical energy. Two adjacent photoelectric conversion components are spaced apart within the light-emitting layer 5, allowing light from each light-emitting unit to be reflected and converted into electrical energy. Electrochromic electrode 33 is coated with two electrochromic materials on its upper and lower surfaces. Electrochromic electrode 33 can be made of transparent ITO. Electrochromic layer 31, when voltage is applied, turns black, a light-absorbing material. Examples include a mixture of poly (3-methylthiophene) (red) and PEDOT (blue), Prussian blue, and its derivatives. Electrochromic layer 32, when voltage is applied, turns white, a light-reflecting material. Examples include titanium oxide, niobium tungsten oxide, and other materials.

[0069] like Figure 1 As shown, when the display panel is in anti-peeping mode, the electrochromic electrode 33 is energized to turn the upper electrochromic layer 31 black to absorb ambient light, preventing ambient light reflection from affecting the display effect; the lower electrochromic layer 32 turns white, reflecting the side light of the display screen, which is then emitted to the photoelectric conversion component with a spacing design, and directly converts the light energy into electrical energy through the photoelectric effect. The electrical energy generated by the photoelectric conversion component is transmitted through the positive and negative electrodes 25 connecting the edges of the AA area to the supercapacitor B placed at the edge of the display screen ( Figure 3 Supercapacitor B is environmentally friendly and has a wide operating temperature range, meeting the requirements of the display's operating environment. The power generated by the photoelectric conversion component is direct current. When supercapacitor B is operating, it is converted into alternating current through inverter circuit C at the edge of the display. This generated energy is then used to generate electroluminescence in the display panel, utilizing the light blocked by privacy mode to reduce the display panel's power consumption.

[0070] like Figure 2As shown, when the display panel is in open mode, the electrochromic electrode 33 stops applying pressure, the upper electrochromic layer 31 and the lower electrochromic layer 32 are both transparent layers, and the light emitted by the display panel can be emitted from the display panel normally. At the same time, the external ambient light shines on the panel and is absorbed by the photoelectric conversion component through the transparent electrochromic material and converted into electrical energy, which is applied to the electroluminescence of the display panel, reducing the power consumption of the display panel.

[0071] For example, the electrochromic layer 3 can be made into other shapes that can reflect light emitted in the plane, such as a triangular prism.

[0072] like Figure 4 and Figure 5 As shown, the electrochromic layer 3 may also have a structure with an inclined surface.

[0073] It should be understood that the terms used herein are for the purpose of describing specific example embodiments only and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "an" and "said" as used herein may also be meant to include plural forms. The terms "comprise", "include", "contain" and "have" are inclusive and therefore specify the presence of stated features, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, steps, operations, elements, parts, and / or combinations thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring them to be performed in the specific order described or illustrated, unless the order of execution is clearly indicated. It should also be understood that additional or alternative steps may be used.

[0074] Although the terms first, second, third, etc. can be used in the text to describe multiple elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates otherwise, terms such as "first", "second" and other numerical terms do not imply order or sequence when used in the text. Therefore, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section without departing from the teaching of the example embodiments.

[0075] The foregoing description is intended only to provide specific embodiments of the present invention, which will enable those skilled in the art to understand and implement the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not intended to be limited to the embodiments shown herein, but is intended to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A display panel, comprising: A substrate layer and a plurality of pixel units arrayed on the substrate layer, characterized in that a photoelectric conversion component and an electrochromic layer are provided between two adjacent pixel units, the photoelectric conversion component being used to convert light energy into electrical energy; the display panel further comprising an encapsulation layer, the electrochromic layer being located on a side of the encapsulation layer close to the substrate layer, the photoelectric conversion component being located on a side of the substrate layer close to the encapsulation layer, one photoelectric conversion component being arranged opposite one electrochromic layer; and a light-emitting layer being further provided between two adjacent photoelectric conversion components; When the electrochromic layer is in the anti-peeping mode, light emitted obliquely through the light-emitting layer acts on the electrochromic layer and is reflected back to the photoelectric conversion component, so that the display panel has a narrow viewing angle relative to the user; When the electrochromic layer is in a normal display mode, external ambient light passes through the electrochromic layer and is emitted to the photoelectric conversion component.

2. The display panel according to claim 1, wherein: The electrochromic layer comprises an upper electrochromic layer close to the encapsulation layer and a lower electrochromic layer close to the light conversion layer, and an electrochromic electrode layer is provided between the upper electrochromic layer and the lower electrochromic layer; When the anti-peeping mode is on, the upper electrochromic layer displays black to absorb ambient light, and the lower electrochromic layer displays silvery white to reflect light emitted from the side of the display screen; When the normal mode is turned on, the upper electrochromic layer and the lower electrochromic layer both display a transparent color, and external ambient light is incident on the photoelectric conversion component to convert light energy into electrical energy, so that the light emitted from the side of the display screen can be emitted normally.

3. The display panel according to claim 1, wherein: In the direction from the encapsulation layer to the substrate layer, the photoelectric conversion component includes an anti-reflection film layer, N-type silicon and P-type silicon. When the electrochromic layer is in anti-peep mode, the light obliquely emitted through the light-emitting layer acts on the electrochromic layer and is reflected back to the anti-reflection film layer, so that the display panel has a narrow viewing angle relative to the user.

4. The display panel according to claim 3, wherein: The photoelectric conversion component also includes a positive electrode and a negative electrode. The positive electrode is located on the side of the P-type silicon close to the substrate layer, and the negative electrode is located on the side of the N-type silicon close to the encapsulation layer. The photoelectric conversion component is connected to a supercapacitor through the positive electrode and the negative electrode. The supercapacitor is used to store electrical energy. The supercapacitor is connected to an inverter circuit, and the inverter circuit is used to provide electrical energy to the light-emitting layer.

5. The display panel according to claim 4, wherein: The pixel unit also includes an anode layer, which is covered on the side of the substrate layer close to the packaging layer, and the positive electrode is embedded in the anode layer; the pixel unit also includes a filling layer, which is covered on the side of the packaging layer close to the substrate layer, and the electrochromic layer is embedded in the filling layer.

6. The display panel according to claim 5, wherein: The pixel unit further includes a cathode layer, which is covered on a side of the filling layer close to the substrate layer, and the negative electrode is embedded in the cathode layer.

7. The display panel according to claim 6, wherein: The pixel unit also includes an electron injection layer and a hole injection layer, the electron injection layer is covered between the cathode layer and the light-emitting layer, the hole injection layer is covered between the light-emitting layer and the anode layer, and the P-type silicon and the N-type silicon are embedded in the electron injection layer, the light-emitting layer and the hole injection layer.

8. The display panel according to claim 4, wherein: The anti-reflection film layer and the negative electrode are located in the same film layer, and the anti-reflection film layer and the negative electrode together constitute a film layer structure for covering the upper surface of the N-type silicon.

9. The display panel according to claim 8, wherein: The anti-reflection film layer and the negative electrode are directly spliced ​​or spliced ​​at intervals to form a film layer structure for covering the upper surface of the N-type silicon.

10. A display device, characterized in that: The display panel comprises the display panel according to any one of claims 1 to 9.

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