Structural analysis device, structural analysis method, and structural analysis program

Abstract

Provided is a technique capable of further assisting measurement in electron diffraction. According to one aspect of the invention, an electron diffraction-based structural analysis device is provided. The configuration analysis device is provided with at least one processor capable of executing a program to perform the following steps. In the display step, an image including the plurality of samples is displayed on the basis of transmitted electron data, which is data of transmitted electrons obtained by irradiating a region including the plurality of samples with an electron beam. In the calculation step, the transmissivity of each of the plurality of samples is calculated on the basis of the transmission electron data. In the selection step, at least one sample satisfying a predetermined condition is selected from the image, and the predetermined condition is a condition related to transmittance.

Description

Technical Field

[0001] This invention relates to a structural analysis device, a structural analysis method, and a structural analysis program. Background Technology

[0002] In existing technologies, one method for understanding the properties of matter is the analysis of its crystal structure. Currently, one method for analyzing the crystal structure of matter is the use of radiation such as electron beams, X-rays, and neutron beams. For example, according to Patent Document 1, it is known that the intensity of the interaction between an electron beam and matter is several thousand to tens of thousands of times that of X-rays. Therefore, in electron beam measurements, even crystals only a few thousandths the size of those analyzed by X-rays can have their structures determined. Prior art literature Patent Literature

[0003] Patent Document 1: Japanese Patent Application Publication No. 2014-142357 Summary of the Invention Problems to be solved by the invention

[0004] However, it is well known that in electron beam measurements, the quality of the analytical results varies depending on the crystal chosen. Current crystal selection methods rely heavily on the experience and intuition of the observer, and the quality of the crystal can be judged based on the results of preliminary or formal measurements. Therefore, measuring at least five, and usually around ten, crystals and selecting appropriate data from multiple results is an inefficient and time-consuming process. There is a need to improve the efficiency of crystal selection methods, but techniques for selecting crystals suitable for electron diffraction and for assisting the observer in displaying the results are not well known.

[0005] In view of the above, this invention provides a technique that can further assist in measurements in electron diffraction. Solutions for solving problems

[0006] According to one aspect of the present invention, a structure analysis apparatus based on electron diffraction is provided. This structure analysis apparatus includes at least one processor capable of executing a program to perform the following steps: In a display step, an image comprising multiple samples is displayed based on transmission electron data, the transmission electron data being data obtained by irradiating a region comprising the multiple samples with an electron beam. In a calculation step, the transmittance of each of the multiple samples is calculated based on the transmission electron data. In a selection step, at least one sample satisfying predetermined conditions is selected from the image, the predetermined conditions being conditions related to transmittance.

[0007] According to the present invention, a technique that can further assist electron diffraction-based measurements can be provided. Attached Figure Description

[0008] Figure 1 This is a diagram illustrating an example of the system structure of structural analysis system 1. Figure 2 This is a diagram illustrating an example of the hardware structure of the structural analysis device 2. Figure 3 This is a diagram illustrating an example of the hardware structure of the electron diffraction device 3. Figure 4 This diagram illustrates an example of the functional units possessed by the processor 21. Figure 5 This is a diagram representing an example of the activities performed by the structural analysis system 1. Figure 6 This is a diagram showing an example of image region 4, which includes electron beam transmission image 40. Figure 7 This is an example of a graph showing the relationship between transmittance and the quality of diffraction spot data. Figure 8 This is a diagram showing an example of image region 4, which includes the electron beam transmission image 40 when the sample is selected. Detailed Implementation

[0009] [Implementation Method] The embodiments of the present invention will now be described with reference to the accompanying drawings. The various features shown in the embodiments described below can be combined with each other.

[0010] However, the program for implementing the software described in this embodiment can be provided as a non-transitory computer-readable medium, or it can be provided downloadably from an external server, or it can be provided in a manner whereby the program is launched by an external computer and its functions are implemented by a user terminal device (so-called cloud computing).

[0011] Furthermore, in this embodiment, "part" may also include, for example, a component that combines hardware resources implemented by a generalized circuit with information processing software that can be specifically implemented by these hardware resources. Additionally, although various types of information are processed in this embodiment, this information can be represented, for example, by physical values ​​representing voltage / current signal values, high or low signal values ​​as a set of bits consisting of binary numbers composed of 0s or 1s, or by quantum superposition (so-called qubits), and communication / computation can be performed on a generalized circuit.

[0012] In a broader sense, a circuit refers to a circuit implemented by at least a suitable combination of circuits, circuitry, processors, and memory. That is, it includes Application Specific Integrated Circuits (ASICs), programmable logic devices (e.g., Simple Programmable Logic Devices (SPLDs), Complex Programmable Logic Devices (CPLDs), and Field Programmable Gate Arrays (FPGAs)).

[0013] 1. System Structure of Structural Analysis System 1 First, refer to Figure 1 The system structure of the structural analysis system 1 in this embodiment will be described.

[0014] Figure 1 This is a diagram illustrating an example of the system structure of structural analysis system 1. For example... Figure 1 As shown, the structural analysis system 1 includes a structural analysis device 2 and an electron diffraction device 3. The structural analysis device 2 and the electron diffraction device 3 are configured to communicate with each other via a communication cable or network. Therefore, the structural analysis device 2 and the electron diffraction device 3 can send or receive various types of information. Furthermore, the structural analysis device 2 is an example of an information processing device and is not limited to this embodiment. In this embodiment, the structural analysis device 2 is a PC (Personal Computer). The structural analysis device 2 can also be replaced by a tablet computer, a smartphone, etc. Here, the system illustrated in structural analysis system 1 refers to a system composed of one or more devices or components. Therefore, even a single structural analysis device 2 or a single electron diffraction device 3 is included in the system illustrated in structural analysis system 1.

[0015] The structural analysis apparatus 2 is configured to perform structural analysis based on transmittance and electron diffraction. The electron diffraction apparatus 3 is configured to acquire transmitted electrons and diffraction spots. Both the structural analysis apparatus 2 and the electron diffraction apparatus 3 are operated by the user.

[0016] 2. Hardware Structure Next, refer to Figure 2 and Figure 3 The hardware structures of the structural analysis device 2 and the electron diffraction device 3 in this embodiment will be described separately.

[0017] 2.1. Hardware Structure of Structural Analysis Device 2 Figure 2 This is a diagram illustrating an example of the hardware structure of the structural analysis device 2. (See diagram for example.) Figure 2 As shown, the structural analysis device 2 includes a processor 21, a storage unit 22, a communication unit 23, an input unit 24, and an output unit 25. These components are electrically connected within the structural analysis device 2 via a communication bus 20. The structural analysis device 2 performs the processing of the embodiment.

[0018] Processor 21 performs overall processing and control of the operations associated with structural analysis device 2. Processor 21 is, for example, a Central Processing Unit (CPU). Information processing based on the program stored in storage unit 22 is specifically implemented by processor 21, which is an example of hardware, and can thus be executed as various functional units included in processor 21. The functional units included in processor 21 implement, for example, the following... Figure 5 , Figure 6 and Figure 8 The processing is shown. Furthermore, the processor 21 is not limited to one; it can also be implemented with multiple processors 21 per function. Alternatively, a combination of them may also be used.

[0019] Storage unit 22 stores various information as defined above. This can be implemented, for example, as a solid-state drive (SSD) storing various programs of the structure analysis device 2 executed by processor 21, or as random access memory (RAM) storing information temporarily needed for program execution (printouts, arrays, etc.). Storage unit 22 stores various programs, variables, and data used by processor 21 during program execution of the structure analysis device 2. Storage unit 22 is an example of a storage medium.

[0020] While the communication unit 23 preferably uses wired communication units such as USB, IEEE 1394, Thunderbolt (registered trademark), and wired LAN network communication, it may also include wireless LAN network communication, mobile communication such as LTE / 3G / 4G / 5G, and BLUETOOTH (registered trademark) communication, depending on the need. More preferably, it is implemented as a collection of these multiple communication units. That is, the structural analysis device 2 can also communicate various information from the outside via the communication unit 23.

[0021] The input unit 24 can be included within the housing of the structural analysis device 2 or externally mounted. For example, the input unit 24 can be integrated with the output unit 25 as a touch panel. If it is a touch panel, the user can input click operations, swipe operations, etc. Of course, a switch button, mouse, keyboard, etc., can also be used instead of a touch panel. That is, the input unit 24 accepts input based on the operation performed by the user. This input is forwarded as a command signal to the processor 21 via the communication bus 20, and the processor 21 can perform specified control or calculation as needed.

[0022] The output unit 25 functions as a display device for the structure analysis apparatus 2. The output unit 25 can be included within the housing of the structure analysis apparatus 2 or externally mounted. The output unit 25 displays a user-operable graphical user interface (GUI). This is preferably implemented using a display device such as a CRT monitor, liquid crystal display, organic EL monitor, or plasma display, depending on the type of structure analysis apparatus 2.

[0023] 2.2. Hardware Structure of Electron Diffraction Device 3 Figure 3 This is a diagram illustrating an example of the hardware structure of electron diffraction device 3. (As shown...) Figure 3 As shown, the electron diffraction apparatus 3 includes a processor 31, a storage unit 32, a communication unit 33, an irradiation unit 34, a deflection unit 35, a support unit 36, and a detection unit 37. These components are electrically connected within the electron diffraction apparatus 3 via a communication bus 30. The electron diffraction apparatus 3 performs the processing described in the embodiment. For information regarding the processor 31, storage unit 32, and communication unit 33 of the electron diffraction apparatus 3, please refer to the processor 31, storage unit 22, and communication unit 23 of the structural analysis apparatus 2.

[0024] The irradiation unit 34 is configured to emit an electron beam. The irradiation unit 34 is, for example, an electron gun that accelerates electrons emitted from the cathode by the anode and emits an electron beam.

[0025] The deflection section 35 may be, for example, a coil used to generate a magnetic field to deflect the electron beam. Alternatively, the deflection section 35 may be a deflector plate used to generate an electrostatic field to deflect the electron beam. The deflection section 35 deflects the electron beam based on a scan signal generated by the processor 31.

[0026] The support portion 36 is configured to hold the setting portion. The setting portion is configured to set the sample. The support portion 36 may also be configured to move or tilt the setting portion in any direction based on a movement instruction or tilt instruction generated by the processor 21 or the processor 31.

[0027] The detection unit 37 is configured to detect transmitted or diffracted electrons. The detection unit 37 has a detection surface that counts electrons incident on the detection surface. The detection unit 37 outputs information corresponding to the intensity of the electron beam counted per unit time. The detection unit 37 is preferably a two-dimensional detector capable of detecting the position of the electron beam within a two-dimensional region (i.e., a planar region), in addition to detecting the intensity of the electron beam; however, it can also be a zero-dimensional or one-dimensional detector. A zero-dimensional detector is one that only detects the intensity of the electron beam and lacks position detection capability. A one-dimensional detector is one capable of detecting the position of the electron beam within a one-dimensional region (i.e., a linear region), in addition to detecting the intensity of the electron beam.

[0028] 3. Functional structure of processor 21 in structural analysis device 2 Figure 4 This diagram illustrates an example of the functional units possessed by processor 21. For example... Figure 4 As shown, the processor 21 includes a display unit 210, a calculation unit 211, and a selection unit 212.

[0029] The display unit 210 displays images including multiple samples based on transmission electron data.

[0030] The calculation unit 211 calculates the transmittance of each of the multiple samples based on the transmission electron data.

[0031] The selection unit 212 selects at least one sample that meets the specified conditions from the image. The display unit 210, the calculation unit 211, and the selection unit 212 will be described in detail later.

[0032] 3. Operation flow of structural analysis system 1 Next, an example of preferred information processing performed by the structural analysis system 1 of this embodiment will be described. In this section, as Figure 5 As shown, an example of information processing for measuring diffraction spots is illustrated based on a sample for which good diffraction spots are expected to be obtained in advance according to transmission electron data. Figure 5 This is a diagram representing an example of the activities performed by the structural analysis system 1.

[0033] Before starting information processing, the user installs the sample mounting section onto the support section 36. The sample is preferably a single-crystal sample, but amorphous, polycrystalline, and quasi-crystalline samples can also be selected. Furthermore, the sample with a thickness of less than 1 μm is preferred.

[0034] (Acquisition of transmission electron data) In A1, the processor 21 receives a start instruction from the user regarding the transmission electron determination. This start instruction is used to instruct the structural analysis device 2 to begin measuring the intensity of transmitted electrons in and around the sample.

[0035] In A2, processor 21 sends a start instruction for transmission electron measurement to structure analysis device 2 via communication unit 23. In A3, processor 31 receives the start instruction for transmission electron measurement from electron diffraction device 3 via communication unit 33.

[0036] In A4, processor 31, in response to receiving a start instruction for transmission electron measurement, drives irradiation unit 34. Irradiation unit 34 irradiates an electron beam toward the sample. Detection unit 37 detects the electron beam that has passed through the sample as transmitted electrons. Processor 31 acquires the detection result of the transmitted electrons detected by detection unit 37 as transmission electron data. This transmission electron data is data on the intensity of transmitted electrons obtained by irradiating a measurement region 400 including multiple samples with an electron beam.

[0037] In A5, processor 31 transmits transmission electron data to structure analysis device 2 via communication unit 33. In A6, processor 21 receives transmission electron data from electron diffraction device 3 via communication unit 23.

[0038] In A7, the display unit 210 generates an electron beam transmission image 40 including multiple samples based on the transmitted electron data. The display unit 210, as shown... Figure 6 The generated electron beam transmission image 40 is shown as illustrated. Figure 6 This diagram illustrates an example of image region 4, which includes electron beam transmission image 40. In addition to electron beam transmission image 40, image region 4 also includes a calculation button 41 and a measurement button 42.

[0039] The electron beam transmission image 40 is an image generated based on transmitted electron data, displaying the intensity distribution of transmitted electrons. The electron beam transmission image 40 can be an image represented in grayscale, an image represented using a colorimetric method, or an image that has undergone image processing such as binary conversion or smoothing. The electron beam transmission image 40 includes a measurement area 400, a sample area 401, an outer area 402, transmittance information 403, and an irradiation area 404.

[0040] Measurement area 400 is the area where transmission electron data is measured. Measurement area 400 includes multiple samples. Sample area 401 is the area in the electron beam transmission image 40 where a sample is present. Outside sample area 402 is the area in the electron beam transmission image 40 where no sample is present, and is the area outside sample area 401. Transmittance information 403 is information indicating the transmittance of a sample, displayed in a manner corresponding to sample area 401. Irradiation area 404 is the area representing the range in which diffraction spot measurements are performed in response to acceptance of an instruction to acquire diffraction spots. Furthermore, irradiation area 404 can also be configured to be movable according to user operation.

[0041] The calculation button 41 is used to start calculating the transmittance of the sample.

[0042] The measurement button 42 is a button for indicating the acquisition of diffraction spots. This diffraction spot acquisition indication is used to start the acquisition of diffraction spots by the structural analysis device 2.

[0043] The display unit 210 may also have the function of identifying a sample by performing image processing on the electron beam transmission image 40. The display unit 210 identifies the sample in the electron beam transmission image 40 based on the intensity distribution of transmitted electrons in the electron beam transmission image 40. The method for extracting the sample region 401 from the electron beam transmission image 40 can be a conventional method. For example, the method for extracting the sample region 401 from the electron beam transmission image 40 can be a method based on binary processing, or it can be a method based on edge extraction using a differential filter.

[0044] In A8, in response to the pressing of the calculation button 41, the calculation unit 211 calculates the transmittance of each of the multiple samples based on the transmitted electron data. Specifically, for example, the calculation unit 211 calculates the transmittance based on the average value of the transmitted electron data of a sample and the average value of the transmitted electron data near the sample. The calculation unit 211 uses the transmitted electron data of the outer region 402 of the sample as the transmitted electron data near the sample. At this time, the calculation unit 211 can use the outer region 402 of the sample at a predetermined distance from the sample region 401 as the sample vicinity. This predetermined distance can be, for example, any distance in the range of 1 to 10 μm. More specifically, the method for calculating the transmittance varies depending on whether the intensity of the transmitted electrons in the sample region 401 and the outer region 402 of the sample is acquired as two-dimensional data, as one-dimensional data, or as zero-dimensional data.

[0045] When acquiring the intensity of transmitted electrons within the sample region 401 and the outer region 402 as two-dimensional data, the calculation unit 211 selects a sample region 401 and the outer region 402 surrounding the sample region 401 as a range. The calculation unit 211 can calculate the transmittance by dividing the average value of the transmitted electron data of the selected sample region 401 by the average value of the transmitted electron data of the outer region 402.

[0046] Furthermore, when acquiring the intensity of transmitted electrons in the sample region 401 and the outer region 402 as one-dimensional data, the calculation unit 211 selects a straight line range whose starting point and ending point are on the outer region 402 and which traverses a certain sample region 401. Alternatively, the calculation unit 211 selects a straight line range whose starting point is on the outer region 402 and whose ending point is on the sample region 401. The calculation unit 211 can calculate the transmittance by dividing the average value of the transmitted electron data of the sample region 401 on the selected straight line by the average value of the transmitted electron data of the outer region 402 on the same straight line.

[0047] Furthermore, when acquiring the intensity of transmitted electrons in the sample region 401 and the outer region 402 as zero-dimensional data, the calculation unit 211 selects one or more arbitrary points from the sample region 401 and one or more arbitrary points from the outer region 402. The calculation unit 211 can calculate the transmittance by dividing the average value of the transmitted electron data in the selected sample region 401 by the average value of the transmitted electron data in the selected outer region 402.

[0048] The term "average" is not limited to simple averages; it also includes values ​​obtained through other calculation methods such as weighted averages, and can also be values ​​obtained by applying calculation methods different from averages.

[0049] The A8's information processing enables more accurate calculation of the transmittance of each sample, making it easier for users to select appropriate samples.

[0050] After the transmittance calculation is completed, the display unit 210 displays the sample area 401 and transmittance information 403 correspondingly on the electron beam transmission image 40 for each of the multiple samples. The corresponding method can be any method that allows identification of which sample the displayed transmittance information 403 belongs to. For example, the display unit 210 may display the transmittance information 403 in a manner where at least a portion overlaps with the sample area 401. Alternatively, the display unit 210 may display the transmittance information 403 in a manner where it does not overlap with two or more sample areas 401. This allows the user to more accurately grasp the transmittance of each sample, making it easier for the user to select an appropriate sample. Furthermore, when selecting a sample, the reliance on the user's experience and intuition can be further reduced.

[0051] In A9, the selection unit 212 selects at least one sample that meets the specified conditions from the electron beam transmission image 40. This selection method can be any method capable of selecting samples that meet the specified conditions. For example, the selection unit 212 can select samples from the sample region 401 that meets the specified conditions, as accepted by the user. The selection unit 212 can also automatically select any sample that meets the specified conditions. For example, the selection unit 212 selects at least one sample from the electron beam transmission image 40 in ascending order of the difference when comparing transmittance with a specified value. This specified value can be a preset value or can be arbitrarily set by the user; for example, it can be arbitrarily set from 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, etc. The display unit 210 moves the position of the irradiation area 404 to overlap with the sample region 401 of the selected sample. This facilitates the appropriate selection of samples that meet the specified conditions.

[0052] The specified conditions are related to transmittance. These conditions can be transmittance within a certain range, preferably 20% to 50%. More preferably, the specified conditions are 30% to 40%. The specified conditions can also be any range set by the user. Furthermore, the specified conditions can be set according to the included elements; for example, the more elements with higher atomic numbers included, the larger the upper limit of transmittance can be set. This makes it easier to select samples with smaller diffraction spot expansion from multiple samples. Additionally, by setting such an upper limit of transmittance, it is easier to obtain the intensity of diffracted electrons required for crystal structure analysis, thus easily suppressing the possibility of prolonged electron beam irradiation time during crystal structure analysis.

[0053] Next, as Figure 7 The reason why the estimated optimal value of transmittance is 20% to 50% is explained. Figure 7 This is an example of a graph showing the relationship between transmittance and the quality of diffraction spot data. Figure 7The graph shows a coordinate plot of transmittance versus Rmerge or Rmeas for multiple L-tyrosine crystals. The plotted points represented by triangles represent the transmittance values ​​on the x-axis and the Rmerge values ​​on the y-axis for each L-tyrosine crystal. The plotted points represented by circles represent the transmittance values ​​on the x-axis and the Rmeas values ​​on the y-axis for each L-tyrosine crystal. The dashed lines in the graph are curves calculated using the least squares method for each value of the triangle-represented plotted points. The solid lines in the graph are curves calculated using the least squares method for each value of the circle-represented plotted points. Smaller values ​​for Rmerge and Rmeas indicate higher quality diffraction data. According to the graph, Rmerge and Rmeas values ​​are smaller when the transmittance is in the range of 20–50%. Therefore, it is speculated that a transmittance range of 20–50% is optimal for obtaining high-quality data.

[0054] Rmerge refers to the uniformity of the intensity of equivalent reflections. Equivalent reflections refer to reflections that form diffraction points with the same intensity due to the symmetry of the crystal. Rmerge is calculated as follows. Here, |Ii(hkl)-<I(hkl)> | is the difference between the intensity of the i-th equivalent diffraction point hkl and the average intensity.<I(hkl)> It is the average intensity of i diffraction points. [Formula 1]

[0055] Rmeas is a parameter that corrects for redundancy in Rmerge. Rmeas is calculated as follows. Here, n is the number of observations at diffraction point hkl. [Equation 2]

[0056] In A9, when a sample is selected, such as Figure 8 As shown, display unit 210 emphasizes the display of at least one selected sample. Figure 8This diagram illustrates an example of image region 4 of the electron beam transmission image 40 when a sample is selected. The method of highlighting is not particularly limited, as long as it allows the user to identify the sample whose transmittance meets the specified conditions. For example, the display unit 210 can use a predetermined mark to highlight at least one selected sample. This predetermined mark could be, for example, a mark indicating the selected sample with an arrow 405, a mark surrounding the selected sample with an object 406 such as a circle or square, a mark displaying a line 407 on the outline of the sample region 401 of the selected sample, or a mark that changes the color of the sample region 401 of the selected sample. Thus, since the selected sample is highlighted, it is easy to identify the sample selected by the user.

[0057] Furthermore, in A9, when multiple samples are selected, the structural analysis system 1 performs the processing of A9 to A14 on each sample in any order to obtain the diffraction spots of each sample sequentially.

[0058] (Obtaining diffraction spots) In the A10, processor 21 responds to Figure 6 Pressing the measurement button 42 generates an indication for acquiring diffraction spots. The processor 21 sends the indication for acquiring diffraction spots to the electron diffraction device 3.

[0059] In A11, the processor 31 receives instructions from the structure analysis device 2 to acquire diffraction spots.

[0060] In A12, processor 31, in response to receiving an instruction to acquire diffraction spots, drives irradiation unit 34. Irradiation unit 34 irradiates an electron beam into irradiation area 404. Processor 31 generates a tilt instruction. Support unit 36 ​​adjusts the angle of setting unit according to the tilt instruction. When the relationship between the sample and the electron beam is such that the angle satisfies the Bragg condition, electrons diffracted from the sample by the irradiated electron beam are generated, and detection unit 37 detects these diffracted electrons. Processor 31 acquires diffraction spot data from the diffracted electrons detected by detection unit 37.

[0061] In A13, processor 31 transmits diffraction spot data to structure analysis device 2 via communication unit 33. In A14, processor 21 receives diffraction spot data from electron diffraction device 3 via communication unit 23.

[0062] In A15, the processor 21 performs structural analysis of the sample based on the data from the diffraction spots by accepting the user's operation on the input unit 24.

[0063] In A16, when the structural analysis of the sample is completed, the processor 21 receives an instruction from the user via the input unit 24 to continue or terminate the measurement. If structural analysis is to be continued using other samples, the processor 21 initiates the process in activity A9. If information processing is terminated, the structural analysis system 1 terminates information processing.

[0064] According to this embodiment, a technique that can further assist electron diffraction-based measurements can be provided. Furthermore, when performing the technique to assist electron diffraction-based measurements, complex information processing is not required, thus reducing the use of cache memory in the structure analysis device 2 and the electron diffraction device 3. In addition, as a result of reducing cache memory usage, large devices or computers are not required, thus enabling low-cost information processing.

[0065] [other] In this embodiment, an example was described where the display unit 210 performs image processing on the electron beam transmission image 40 to specify the sample region 401 and the outer region 402. In a modified example, the display unit 210 may also apply a color map to the electron beam transmission image 40, changing the sample region 401 and the outer region 402 to user-recognizable colors for display.

[0066] Furthermore, in this embodiment, an example of the calculation unit 211 calculating the transmittance of multiple samples based on transmission electron data has been described. In a modified example, an example where the calculation unit 211 does not calculate the transmittance is described, taking advantage of the fact that the brightness of the sample varies with the transmittance. For example, in a modified example, the display unit 210 may also apply a color map to the electron beam transmission image 40, displaying only samples with brightness that meet the specified transmittance conditions as recognizable colors. In this case, the storage unit 22 may also pre-store brightness information related to the brightness of samples with transmittance meeting the specified conditions. The display unit 210 may also apply the color map from the storage unit 22 with reference to the brightness information.

[0067] In this embodiment, an example of user operation of the structural analysis device 2 is described. In a variation, the user may also operate the structural analysis device 2 via other information processing devices and through a remote desktop.

[0068] Regarding the structural analysis system 1 of the above-described embodiments, the structural analysis method includes each step of the structural analysis apparatus 2. The structural analysis program causes at least one computer to execute each step of the structural analysis apparatus 2.

[0069] Furthermore, it can also be provided in the following ways.

[0070] (1) A structural analysis apparatus, which is an electron diffraction-based structural analysis apparatus, comprising: at least one processor capable of executing a program to perform the following steps: in a display step, displaying an image including a plurality of samples based on transmission electron data, the transmission electron data being data of transmission electrons obtained by irradiating a region including the plurality of samples with an electron beam; in a calculation step, calculating the transmittance of each of the plurality of samples based on the transmission electron data; and in a selection step, selecting at least one sample from the image that satisfies a predetermined condition, the predetermined condition being a condition related to the transmittance.

[0071] (2) The structural analysis apparatus according to (1) above, wherein, in the display step, for each of the plurality of samples, the sample and the transmittance are displayed on the image in correspondence.

[0072] (3) According to the structural analysis apparatus described in (1) above, in the selection step, at least one sample is selected from the image in ascending order of the difference when comparing the transmittance with the specified value.

[0073] (4) The structural analysis apparatus according to (1) above, wherein the specified conditions include the condition that the transmittance is 20% to 50%.

[0074] (5) The structural analysis apparatus according to (1) above, wherein, in the display step, the selected at least one specimen is highlighted.

[0075] (6) According to the structural analysis apparatus described in (1) above, wherein, in the calculation step, the transmittance is calculated based on the transmission electron data of the sample and the transmission electron data near the sample.

[0076] (7) The structural analysis apparatus according to (1) above, wherein, in the display step, the plurality of specimens are specified by performing image processing on the image.

[0077] (8) The structural analysis apparatus according to (1) above, wherein the sample is a single crystal.

[0078] (9) A structural analysis method, comprising each step of the structural analysis apparatus described in any one of (1) to (8) above.

[0079] (10) A structural analysis program, wherein at least one computer is made to execute the steps of the structural analysis apparatus described in any one of (1) to (8) above. Of course, it is not limited thereto.

[0080] Finally, various embodiments of the present invention have been described, but these embodiments are merely illustrative and are not intended to limit the scope of the invention. This new embodiment can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. This embodiment and its variations are included within the scope or spirit of the invention, and are included within the scope of the invention as described in the claims and its equivalents. Explanation of reference numerals in the attached figures

[0081] 1: Structural Analysis System 2: Structural Analysis Device 20: Communication bus 21: Processor 210: Display Section 211: Computing Department 212: Selection Department 22: Storage Department 23: Ministry of Communications 24: Input Section 25: Output Section 3: Electron diffraction device 30: Communication bus 31: Processor 32: Storage Department 33: Ministry of Communications 34: Irradiation Department 35: Biased Part 36: Support section 37: Testing Department 4: Image area 40: Electron beam transmission image 400: Measurement area 401: Sample area 402: External region of the sample 403: Transmittance Information 404: Irradiation area 405: Arrow 406: Object 407: Line 41: Calculation button 42: Measurement button.

Claims

1. A structural analysis device, which is a structural analysis device based on electron diffraction, wherein, have: At least one processor, said processor being capable of executing a program to perform the following steps. In the display step, an image comprising multiple samples is displayed based on transmission electron data, which is obtained by irradiating an area comprising the multiple samples with an electron beam. In the calculation step, the transmittance of each of the plurality of samples is calculated based on the transmitted electron data. In the selection step, at least one sample that meets specified conditions from the image is selected, the specified conditions being conditions related to the transmittance.

2. The structural analysis device according to claim 1, wherein, In the display step, for each of the plurality of samples, the sample and the transmittance are displayed on the image in correspondence.

3. The structural analysis device according to claim 1, wherein, In the selection step, at least one sample is selected from the image in ascending order of the difference when comparing the transmittance with a specified value.

4. The structural analysis device according to claim 1, wherein, The specified conditions include a transmittance of 20% to 50%.

5. The structural analysis device according to claim 1, wherein, In the display step, emphasis is placed on displaying the selected at least one sample.

6. The structural analysis apparatus according to claim 1, wherein, In the calculation step, the transmittance is calculated based on the transmitted electron data of the sample and the transmitted electron data near the sample.

7. The structural analysis apparatus according to claim 1, wherein, In the display step, the plurality of samples are specified by performing image processing on the image.

8. The structural analysis apparatus according to claim 1, wherein, The sample was a single crystal.

9. A structural analysis method, wherein, The structural analysis apparatus includes each step of any one of claims 1 to 8.

10. A structural analysis program, wherein, The device enables at least one computer to perform the steps of the structural analysis apparatus according to any one of claims 1 to 8.

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