Ultra-wideband gallium nitride amplitude limiting circuit based on pi-type matched microstrip

Abstract

The invention provides an ultra-wideband gallium nitride amplitude limiting circuit based on a pi-type matched microstrip, and the circuit comprises an input matched microstrip which is used for matching input impedance to standard impedance; the first-stage amplitude limiting circuit is used for carrying out preliminary amplitude limiting processing on the obtained radio frequency signal under standard impedance to obtain a first amplitude-limited radio frequency signal; the inter-stage matching circuit is used for matching the standard impedance to the target impedance; the second-stage amplitude limiting circuit is used for performing final amplitude limiting processing on the first amplitude limiting radio frequency signal under target impedance to obtain a second amplitude limiting radio frequency signal; the output matching microstrip is used for recovering the target impedance of the ultra-wideband gallium nitride amplitude limiting circuit to the standard impedance; the output port is used for outputting the second amplitude limiting radio frequency signal under standard impedance; wherein the first-stage amplitude limiting circuit takes a gallium nitride device auxiliary silicon PIN tube as a main amplitude limiting element; and the second-stage amplitude limiting circuit takes a silicon PIN tube as a main amplitude limiting element. And finally, high power resistance and low insertion loss performance are considered in a wide frequency band.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of circuit protection, and in particular to a π-type matching microstrip-based ultra-wideband gallium nitride limiting amplifier circuit. BACKGROUND

[0002] Sensitive units of radio frequency communication systems, such as low noise amplifiers (LNAs) in radio frequency receiver front-ends, are extremely susceptible to interference from complex electromagnetic environments or high-power microwave weapons. Electromagnetic interference signals (especially high-power pulse signals) can couple into circuits through antennas, causing semiconductor devices to malfunction, degrade in performance, or even burn out. As a power adaptive controller device, a limiter can attenuate high-power input signals to a safe range and plays a key role in radio frequency front-end protection. However, as the electromagnetic environment becomes increasingly complex, the performance requirements for limiters are constantly increasing, and breakthroughs are urgently needed in terms of wide bandwidth, high power tolerance, and low insertion loss.

[0003] Currently, limiters mainly use PIN diodes as limiting tubes, and reflection-type limiting is the main method. Among them, gallium arsenide (GaAs) PIN diodes are widely used due to their wide bandwidth and low insertion loss characteristics, but their power tolerance is limited. Silicon-based (Si) PIN diodes have strong voltage resistance, but they perform poorly in terms of wide bandwidth and low insertion loss. In recent years, gallium nitride (GaN) limiters have attracted attention due to their high power tolerance, but their operating bandwidth is narrow, making it difficult to meet the needs of ultra-wideband protection.

[0004] The above problems limit the application of limiters in complex electromagnetic environments. Therefore, a new type of limiter solution that can balance high power tolerance, wide bandwidth, and low insertion loss is urgently needed. SUMMARY

[0005] To solve the above problems existing in the prior art, the present application provides a π-type matching microstrip-based ultra-wideband gallium nitride limiting amplifier circuit.

[0006] The technical problem to be solved by the present application is solved by the following technical scheme: The present application provides a π-type matching microstrip-based ultra-wideband gallium nitride limiting amplifier circuit, comprising: an input port, an input matching microstrip, a first-stage limiting amplifier circuit, an inter-stage matching circuit, a second-stage limiting amplifier circuit, an output matching microstrip, and an output port. The input port is used to obtain radio frequency signals from an antenna. The input matching microstrip is used to match the input impedance of the ultra-wideband gallium nitride limiting amplifier circuit to a standard impedance. The first-stage limiting amplifier circuit is used to perform preliminary limiting processing on the radio frequency signals under the standard impedance to obtain a first limiting radio frequency signal. The inter-stage matching circuit is used to match the standard impedance of the ultra-wideband gallium nitride limiting amplifier circuit to a target impedance. a second-stage limiting circuit configured to perform a final limiting process on the first limited radio frequency signal at a target impedance to obtain a second limited radio frequency signal; an output matching microstrip configured to restore the target impedance of the ultra-wideband gallium nitride limiting circuit to a standard impedance; an output port configured to output the second limited radio frequency signal at the standard impedance; wherein the first-stage limiting circuit takes a gallium nitride device as a main limiting element, and the second-stage limiting circuit takes a silicon PIN tube as a main limiting element.

[0007] Optionally, the first-stage limiting circuit is provided with a first gallium nitride Schottky diode D1, a second gallium nitride Schottky diode D2, a first inductor L1, a resistor R1, a coupler C1, and a first silicon PIN tube D3. The cathode of the first gallium nitride Schottky diode D1, the cathode of the second gallium nitride Schottky diode D2, the coupling end of the coupler C1, and one end of the first inductor L1 are connected to each other; the anode of the first gallium nitride Schottky diode D1 and the anode of the second gallium nitride Schottky diode D2 are both grounded; one end of the through end of the coupler C1 is connected to the output end of the input matching microstrip; the anode of the first silicon PIN tube D3 is connected to the other end of the first inductor L1, the other end of the through end of the coupler C1, and the input end of the inter-stage matching circuit; and the cathode of the first silicon PIN tube D3 is grounded.

[0008] Optionally, the inter-stage matching circuit is provided with a first microstrip line M2, a π-type matching microstrip Mπ, and a second microstrip line M3 connected in series.

[0009] Optionally, the π-type matching microstrip Mπ is formed by a main path microstrip, a third microstrip line, and a fourth microstrip line. One end of the main path microstrip is connected to the first microstrip line M2, and the other end of the main path microstrip is connected to the second microstrip line M3. One end of the third microstrip line is connected to the output end of the first microstrip line M2, and one end of the fourth microstrip line is connected to the input end of the second microstrip line M3. The other ends of the third microstrip line and the fourth microstrip line are open circuits.

[0010] Optionally, the second-stage limiting circuit is provided with a second silicon PIN tube D4 and a second inductor L2. The anode of the second silicon PIN tube D4 is connected to the output end of the inter-stage matching circuit and one end of the second inductor L2; and the cathode of the second silicon PIN tube D4 and the other end of the second inductor L2 are both grounded.

[0011] Optionally, the first silicon PIN tube D3 is CLA 4607.

[0012] Optionally, the second silicon PIN tube D4 adopts CLA 4601.

[0013] Optionally, the inductance value of the first inductor L1 is 77nH.

[0014] Optionally, the inductance value of the second inductor L2 is 77nH.

[0015] The application provides a π-type matching microstrip-based ultra-wideband gallium nitride limiting amplifier circuit, comprising an input port, an input matching microstrip, a first-stage limiting amplifier circuit, an inter-stage matching circuit, a second-stage limiting amplifier circuit, an output matching microstrip and an output port; the input port is used to acquire a radio frequency signal from an antenna; the input matching microstrip is used to match the input impedance of the ultra-wideband gallium nitride limiting amplifier circuit to a standard impedance; the first-stage limiting amplifier circuit is used to preliminarily limit the radio frequency signal at the standard impedance to obtain a first limited radio frequency signal; the inter-stage matching circuit is used to match the standard impedance of the ultra-wideband gallium nitride limiting amplifier circuit to a target impedance; the second-stage limiting amplifier circuit is used to finally limit the first limited radio frequency signal at the target impedance to obtain a second limited radio frequency signal; the output matching microstrip is used to restore the target impedance of the ultra-wideband gallium nitride limiting amplifier circuit to the standard impedance; and the output port is used to output the second limited radio frequency signal at the standard impedance; wherein the first-stage limiting amplifier circuit takes a gallium nitride device auxiliary silicon PIN tube as a main limiting element; and the second-stage limiting amplifier circuit takes a silicon PIN tube as a main limiting element. In the application, firstly, the first-stage limiting amplifier circuit takes a gallium nitride device as an auxiliary limiting element, uses the high breakdown electric field and the detection capability of the gallium nitride device to provide a direct current to assist the silicon PIN to realize large-power preliminary limiting; the second-stage limiting amplifier circuit uses an inductor to directly feed the silicon PIN tube to further limit the output power, and finally realizes kilowatt-level high-power limiting. Secondly, the input / output matching microstrip and the inter-stage matching circuit realize ultra-wideband impedance matching (covering DC~18GHz) through a multi-section transmission line structure, reduce signal reflection and insertion loss, make the overall insertion loss of the system ≤1.5dB, and finally balance high power resistance and low insertion loss performance in a wide frequency band.

[0016] The application will be further described in detail below in combination with the drawings and examples. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 Fig. 1 is a structural schematic diagram of a π-type matching microstrip-based ultra-wideband gallium nitride limiting amplifier circuit according to an embodiment of the application; Figure 2 Fig. 2 is a limiting amplifier circuit layout formed by the π-type matching microstrip-based ultra-wideband gallium nitride limiting amplifier circuit according to the embodiment of the application; Figure 3 Fig. 3 is a comparison result of insertion loss with / without the π-type matching limiting amplifier circuit; Figure 4Exemplarily show the input standing wave ratio comparison results corresponding to the π-type matching limiting amplifier circuit and the non-π-type matching limiting amplifier circuit. Figure 5 Exemplarily show the large signal simulation diagram of the limiting amplifier circuit provided by the embodiment of the application. DETAILED DESCRIPTION

[0018] The application will be further described in detail below with specific embodiments, but the embodiments of the application are not limited thereto.

[0019] In order to realize the limiting amplifier circuit with high power tolerance and low insertion loss performance in a wide frequency band, the embodiment of the application provides a π-type matching microstrip based ultra-wideband gallium nitride limiting amplifier circuit. Figure 1 The structure diagram of the π-type matching microstrip based ultra-wideband gallium nitride limiting amplifier circuit provided by the embodiment of the application is shown in Figure 1 The structure diagram of the π-type matching microstrip based ultra-wideband gallium nitride limiting amplifier circuit provided by the embodiment of the application is shown in The input port 101 is used to obtain the radio frequency signal from the antenna. The input matching microstrip 102 is used to match the input impedance of the ultra-wideband gallium nitride limiting amplifier circuit to the standard impedance. The first-stage limiting amplifier circuit 103 is used to preliminarily limit the radio frequency signal at the standard impedance to obtain the first limited radio frequency signal. The inter-stage matching circuit 104 is used to match the standard impedance of the ultra-wideband gallium nitride limiting amplifier circuit to the target impedance. The second-stage limiting amplifier circuit 105 is used to finally limit the first limited radio frequency signal at the target impedance to obtain the second limited radio frequency signal. The output matching microstrip 106 is used to restore the target impedance of the ultra-wideband gallium nitride limiting amplifier circuit to the standard impedance. The output port 107 is used to output the second limited radio frequency signal at the standard impedance. The first-stage limiting amplifier circuit 103 uses a gallium nitride device assisted silicon PIN tube as the main limiting element, and the second-stage limiting amplifier circuit 105 uses a silicon PIN tube as the main limiting element.

[0020] It should be noted that the standard impedance is generally 50 ohms in the embodiment.

[0021] In the embodiment, the first-stage limiting circuit 103 works as follows: the coupler branch couples a part of energy to the coupling end of the coupler C1; when the input signal (radio frequency signal) power is small, the gallium nitride Schottky diodes D1 and D2 are not conductive, the circuit impedance does not change, and the radio frequency signal passes normally; when the input signal power of the radio frequency signal is large enough, the energy at the coupling end makes the gallium nitride Schottky diodes D1 and D2 conductive, a direct current is detected, the direct current passes through the inductor L1 to supply power to the first silicon PIN tube D3 to make it conductive, the first silicon PIN tube D3 changes from a high resistance state to a low resistance state after being conductive, the circuit impedance changes, impedance mismatch reflects the signal, and the radio frequency signal cannot pass, thereby protecting the sensitive elements at the back end.

[0022] The second-stage limiting circuit 105 works as follows: the inductor L2 and the second silicon PIN tube D4 form a loop, the inductor L2 feeds power to the second silicon PIN tube D4; when the radio frequency signal power is large but not enough to make the first silicon PIN tube D3 conductive, the second silicon PIN tube D4 is conductive, the circuit impedance is mismatched to reflect the signal, and the first limiting radio frequency signal cannot pass, thereby protecting the sensitive elements at the back end.

[0023] Optionally, the first-stage limiting circuit 103 is provided with the first gallium nitride Schottky diode D1, the second gallium nitride Schottky diode D2, the first inductor L1, the resistor R1, the coupler C1, and the first silicon PIN tube D3. The cathode of the first gallium nitride Schottky diode D1, the cathode of the second gallium nitride Schottky diode D2, the coupling end of the coupler C1, and one end of the first inductor L1 are connected to each other; the anode of the first gallium nitride Schottky diode D1 and the anode of the second gallium nitride Schottky diode D2 are grounded; one end of the through end of the coupler C1 is connected to the output end of the input matching microstrip 102; the anode of the first silicon PIN tube D3 is connected to the other end of the first inductor L1, the other end of the through end of the coupler C1, and the input end of the inter-stage matching circuit 104; and the cathode of the first silicon PIN tube D3 is grounded.

[0024] Optionally, the inter-stage matching circuit 104 is provided with the first microstrip line M2, the π-type matching microstrip Mπ, and the second microstrip line M3 connected in series.

[0025] Optionally, the π-type matching microstrip Mπ is composed of a main path microstrip, a third microstrip line, and a fourth microstrip line; one end of the main path microstrip is connected to the first microstrip line M2, and the other end of the main path microstrip is connected to the second microstrip line M3; one end of the third microstrip line is connected to the output end of the first microstrip line M2, and one end of the fourth microstrip line is connected to the input end of the second microstrip line M3; the other ends of the third microstrip line and the fourth microstrip line are open.

[0026] It should be noted that the main road microstrip shape is rectangular, the width is 0.25mm, and the length is 0.54mm; the third microstrip line shape is J type, the width is 0.1mm, the length of the front and rear ends of the corner is 0.1mm respectively, the corner angle is 90 degrees, and the radius is 0.1mm; the fourth microstrip line shape is rectangular, the width is 0.3mm, and the length is 0.1mm.

[0027] Optionally, the second-stage limiting circuit 105 is provided with a second silicon PIN tube D4 and a second inductor L2. The anode of the second silicon PIN tube D4 is connected with the output end of the interstage matching circuit 104 and one end of the second inductor L2 respectively; the cathode of the second silicon PIN tube D4 and the other end of the second inductor L2 are grounded.

[0028] Optionally, the first silicon PIN tube D3 adopts CLA 4607.

[0029] Optionally, the second silicon PIN tube D4 adopts CLA 4601.

[0030] Optionally, the inductance value of the first inductor L1 is 77nH.

[0031] Optionally, the inductance value of the second inductor L2 is 77nH.

[0032] The embodiment of the present application provides a kind of ultra-wideband gallium nitride limiting circuit based on π type matching microstrip, comprising: input port 101, input matching microstrip 102, first stage limiting circuit 103, interstage matching circuit 104, second stage limiting circuit 105, output matching microstrip 106 and output port 107;Input port 101, for obtaining radio frequency signal from antenna;Input matching microstrip 102, for matching the input impedance of ultra-wideband gallium nitride limiting circuit to standard impedance;First stage limiting circuit 103, for carrying out preliminary limiting processing to radio frequency signal under standard impedance, and obtain first limiting radio frequency signal;Interstage matching circuit 104, for matching the standard impedance of ultra-wideband gallium nitride limiting circuit to target impedance;Second stage limiting circuit 105, for carrying out final limiting processing to first limiting radio frequency signal under target impedance, and obtain second limiting radio frequency signal;Output matching microstrip 106, for restoring the target impedance of ultra-wideband gallium nitride limiting circuit to standard impedance;Output port 107, for outputting second limiting radio frequency signal under standard impedance;Wherein, first stage limiting circuit 103 uses gallium nitride device as main limiting element;Second stage limiting circuit 105 uses silicon PIN tube as main limiting element.In the present application, first, first stage limiting circuit 103 uses gallium nitride device as auxiliary limiting element, and uses its high breakdown field and detection capability to provide direct current auxiliary silicon PIN to realize high-power preliminary limiting;Second stage limiting circuit 105 uses inductance to directly feed silicon PIN tube for further limiting, reduces output power, and finally realizes kilowatt-level high-power limiting.Second, input / output matching microstrip and interstage matching circuit realize ultra-wideband impedance matching (covering DC ~ 18GHz) by multi-section transmission line structure, reduce signal reflection and insertion loss, make the overall insertion loss of system ≤1.5dB, and finally consider high power and low insertion loss performance in wide frequency band.

[0033] Figure 2 The limiting circuit layout formed by the ultra-wideband gallium nitride limiting circuit is exemplarily shown, as shown in the figure, the area of the limiting circuit layout is only 3.3 mm*1.6 mm, and the overall circuit size is small. Figure 2

[0034] Figures 3-5 The simulation verification of the circuit based on Figure 2 is shown.The specific, Figure 3 The insertion loss comparison results corresponding to the π type matching limiting circuit and the limiting circuit without π type matching limiting circuit are exemplarily shown. Figure 4 The input standing wave comparison results corresponding to the π type matching limiting circuit and the limiting circuit without π type matching limiting circuit are exemplarily shown. Figure 5 The large signal simulation diagram of the limiting circuit provided by the embodiment of the present application is exemplarily shown, as shown in Figure 3 and Figure 4 ​As shown, the insertion loss of the π-type matching amplitude limiting circuit between points m1-m2 is less than that without the π-type matching amplitude limiting circuit, and the input standing wave of the π-type matching amplitude limiting circuit between points m3-m5 is less than that without the π-type matching amplitude limiting circuit, verifying that the ultra-wideband gallium nitride amplitude limiting circuit provided by the present application has a lower insertion loss in a wide frequency band. Figure 5 As shown, the output power of the input signal frequency at 0.1 GHz, 2 GHz, 4 GHz, 6 GHz, 8 GHz, 10 GHz, 12 GHz, 14 GHz and 18 GHz from bottom to top is curve 0-8, and m6 is the output power when the input signal power is 60 dBm at each frequency. As shown from Figure 5 It can be seen that the amplitude limiting circuit has a higher power capacity in the range of 0.1-18 GHz, and when the input power is 60 dBm (1000 W), the output power is less than 30.1 dBm (1.03 W), thus proving that the ultra-wideband gallium nitride amplitude limiting circuit based on the π-type matching microstrip provided by the present application has the advantages of ultra-wideband and high power.

[0035] In summary, the π-type matching microstrip provided by the present application optimizes the insertion loss and standing wave in the circuit 4-16 GHz frequency band by adjusting the length, width and shape of each part of the microstrip. In addition, the present application adopts gallium nitride Schottky diode auxiliary coupling detection. Since the gallium nitride Schottky diode has a lower opening voltage and a faster response speed, compared with directly supplying power to the silicon PIN tube through the coupling branch microstrip coupling end, the gallium nitride Schottky diode complex coupling detection can provide greater detection current to fully turn on the PIN tube. Therefore, the ultra-wideband gallium nitride amplitude limiting circuit based on the π-type matching microstrip provided by the present application can directly cope with the interference of the ultra-wideband, save the circuit area, and has a higher power capacity, solving the problem of high bandwidth and high power faced by the amplitude limiter, and having a high application value.

[0036] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present specification.

[0037] Although the present application has been described in connection with the embodiments thereof with reference to the drawings, it will be apparent to those skilled in the art that various changes in form and details can be made therein without departing from the scope of the application as set forth in the appended claims. In the description of the specification, the word "comprising" does not exclude the presence of other elements or steps than those listed and "a" or "an" does not exclude a plurality, but "plurality" means two or more unless otherwise stated. Furthermore, various features of the following embodiments can be combined with each other, unless specifically stated otherwise.

[0038] The above description is further to the present application in connection with specific preferred embodiments, and cannot be deemed to limit the specific implementation of the present application to these descriptions. For those skilled in the art, without departing from the concept of the present application, a number of simple deductions or substitutions can be made, which should be regarded as falling within the protection scope of the present application.

Claims

1. A π-type matching microstrip based ultra-wideband gallium nitride limiting circuit, characterized by, The application relates to an ultra-wideband gallium nitride limiting amplifier circuit. The input port is used for acquiring radio frequency signals from an antenna. The input matching microstrip is used for matching the input impedance of the ultra-wideband gallium nitride limiting amplifier circuit to a standard impedance. The first-stage limiting amplifier circuit is used for performing preliminary limiting processing on the radio frequency signals under the standard impedance to obtain first limiting radio frequency signals. The inter-stage matching circuit is used for matching the standard impedance of the ultra-wideband gallium nitride limiting amplifier circuit to a target impedance. The second-stage limiting amplifier circuit is used for performing final limiting processing on the first limiting radio frequency signals under the target impedance to obtain second limiting radio frequency signals. The output matching microstrip is used for restoring the target impedance of the ultra-wideband gallium nitride limiting amplifier circuit to the standard impedance. The output port is used for outputting the second limiting radio frequency signals under the standard impedance. The first-stage limiting amplifier circuit uses a gallium nitride device auxiliary silicon PIN tube as a main limiting element. The first-stage limiting amplifier circuit is provided with a first gallium nitride Schottky diode D1, a second gallium nitride Schottky diode D2, a first inductor L1, a resistor R1, a coupler C1 and a first silicon PIN tube D3.

2. The pi-type matching microstrip based ultra-wideband gallium nitride limiting circuit of claim 1, wherein, The cathode of the first gallium nitride Schottky diode D1, the cathode of the second gallium nitride Schottky diode D2, the coupling end of the coupler C1 and one end of the first inductor L1 are connected to each other; the anode of the first gallium nitride Schottky diode D1 and the anode of the second gallium nitride Schottky diode D2 are grounded; one end of the through end of the coupler C1 is connected with the output end of the input matching microstrip; the anode of the first silicon PIN tube D3 is connected with the other end of the first inductor L1, the other end of the through end of the coupler C1 and the input end of the inter-stage matching circuit respectively; and the cathode of the first silicon PIN tube D3 is grounded. The inter-stage matching circuit is provided with a first microstrip line M2, a pi-type matching microstrip Mpi and a second microstrip line M3 which are connected in series.

3. The pi-type matching microstrip based ultra-wideband gallium nitride limiting circuit of claim 1, wherein, The pi-type matching microstrip Mpi is formed by a main path microstrip, a third microstrip line and a fourth microstrip line.

4. The pi-type matching microstrip based ultra-wideband gallium nitride limiting circuit of claim 3, wherein, One end of the main path microstrip is connected with the first microstrip line M2, and the other end of the main path microstrip is connected with the second microstrip line M3. One end of the third microstrip line is connected with the output end of the first microstrip line M2, and one end of the fourth microstrip line is connected with the input end of the second microstrip line M3. The other ends of the third microstrip line and the fourth microstrip line are open. The second-stage limiting amplifier circuit is provided with a second silicon PIN tube D4 and a second inductor L2.

5. The pi-type matching microstrip based ultra-wideband gallium nitride limiting circuit of claim 1, wherein, The anode of the second silicon PIN tube D4 is connected with the output end of the inter-stage matching circuit and one end of the second inductor L2 respectively; and the cathode of the second silicon PIN tube D4 and the other end of the second inductor L2 are grounded. The first silicon PIN tube D3 adopts CLA 4607.

6. The pi-type matching microstrip based ultra-wideband gallium nitride limiting circuit of claim 2, wherein, ​ 7. The pi-type matching microstrip based ultra-wideband gallium nitride limiting circuit of claim 5, wherein, The second silicon PIN tube D4 adopts CLA 4601.

8. The pi-type matching microstrip based ultra-wideband gallium nitride limiting circuit of claim 2, wherein, The inductance value of the first inductor L1 is 77nH.

9. The pi-type matching microstrip based ultra-wideband gallium nitride limiting circuit of claim 5, wherein, The inductance value of the second inductor L2 is 77nH.

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