Solid-state power controller based on SiC MOSFET and control method thereof

By using a SiC MOSFET-based solid-state power controller, combined with a dual-switch Boost circuit and a pre-charge circuit, the problems of large size, weight, and low efficiency of solid-state power controllers in aerospace equipment are solved. This achieves efficient and stable load power supply and voltage regulation, adapts to high-temperature environments, and improves reliability and adaptability.

CN120956067APending Publication Date: 2025-11-14BEIJING PULIMEN ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202511184898.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-08-22
Publication Date
2025-11-14

AI Technical Summary

Technical Problem

In existing high-voltage DC power distribution systems for aerospace equipment, solid-state power controllers are bulky and heavy, have low power distribution efficiency, and their output voltage decreases as battery energy is consumed, failing to meet the requirements for high efficiency, high voltage, and high power density.

Method used

A solid-state power controller based on SiC MOSFETs is adopted, and a dual-switch Boost circuit and a pre-charge circuit are designed. Combined with an isolated drive unit, power isolation and control conversion unit, load power supply and voltage regulation are realized. A dual short-circuit protection scheme is adopted to improve reliability and adaptability.

Benefits of technology

It significantly reduces the size and weight of solid-state power controllers, improves power distribution efficiency and environmental adaptability, ensures stable output voltage, has boost function, prevents short-circuit damage, adapts to high-temperature environments, and improves reliability and sustainability.

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Abstract

The invention relates to a SiC MOSFET-based solid-state power controller and a control method thereof, and belongs to the field of high-voltage direct-current intelligent power distribution. The SiC MOSFET-based solid-state power controller comprises a control circuit for outputting a control signal and a power circuit; the control circuit comprises an isolation driving unit and a power supply isolation and control conversion unit; the power circuit comprises a pre-charging circuit and a double-switch Boost circuit; the double-switch Boost circuit comprises a first SiC MOSFET circuit and a second SiC MOSFET circuit; and under the action of the control signal, the pre-charging circuit supplies power to a load when the power circuit is started, and after the power circuit is started, the second SiC MOSFET circuit is independently conducted or alternately conducted with the first SiC MOSFET circuit, and is used for supplying power to the load connected between the positive output end and the negative output end of the double-switch Boost circuit. The solid-state power controller is efficient, stable and reliable.
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