Semiconductor electrode cleaning device

Abstract

The invention provides a semiconductor electrode cleaning device which comprises an electrode, a cleaning assembly and a power unit. Wherein the cleaning assembly comprises a spray head, a connecting pipe and a liquid storage unit, the connecting pipe is connected with the liquid storage unit and the spray head, the spray head is arranged on the periphery of the electrode and exposes the electrode, and cleaning liquid for cleaning the electrode is provided for the spray head through the liquid storage unit; the power unit is connected with the cleaning assembly, and cleaning power is provided for the cleaning liquid through the power unit. According to the semiconductor electrode cleaning device, the cleanliness of the electrode can be remarkably improved, and the service life of the electrode is prolonged.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology and relates to a semiconductor electrode cleaning device. Background Technology

[0002] Semiconductor wastewater treatment units employ a wide variety of electrodes, such as pH electrodes for monitoring acidity / alkalinity, SS electrodes for monitoring suspended solids, DO electrodes for monitoring dissolved oxygen, and CIT electrodes for detecting specific gravity. These electrodes play a crucial role in the stable operation of the wastewater treatment system; their collaborative functions ensure the effective treatment of wastewater.

[0003] Because wastewater is complex and contains a large amount of suspended solids and impurities, these suspended solids and impurities will adhere to the surface of the electrodes over time, causing scale buildup on the electrodes, which can easily interfere with the electrode measurements.

[0004] Therefore, effective cleaning of the electrodes is particularly important, as it is an essential step to ensure the smooth operation of the wastewater treatment process. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a semiconductor electrode cleaning device to solve the problem of electrode scaling in the prior art.

[0006] To achieve the above and other related objectives, the present invention provides a semiconductor electrode cleaning apparatus, the semiconductor electrode cleaning apparatus comprising:

[0007] electrode;

[0008] A cleaning assembly, comprising a nozzle, a connecting pipe, and a liquid storage unit, wherein the connecting pipe connects the liquid storage unit to the nozzle, and the liquid storage unit provides cleaning fluid for cleaning the electrode to the nozzle;

[0009] A power unit is connected to the cleaning assembly and provides cleaning power to the cleaning fluid through the power unit.

[0010] Optionally, the nozzle includes a rotary nozzle, and the rotary nozzle rotates in a manner including 360° reciprocating rotation or 360° circumferential rotation.

[0011] Optionally, the rotary nozzle includes an automatically rotating nozzle.

[0012] Optionally, the nozzle is disposed around the electrode, has an opening that exposes the electrode, and the nozzle has an arc-shaped or rectangular shape.

[0013] Optionally, the nozzle surrounds the electrode, and the nozzle is in the form of a perforated mesh.

[0014] Optionally, the nozzle is provided with N>1 nozzles, and the area of ​​the nozzles adjacent to the connecting pipe is smaller than the area of ​​the nozzles far from the connecting pipe.

[0015] Optionally, the system further includes a controller and a regulating valve, wherein the regulating valve is disposed on the connecting pipe and communicates with the controller, and the communication method includes one or a combination of wired communication and wireless communication.

[0016] Optionally, the connecting pipe is made of PE or PVC; the nozzle is made of PE or PVC; and the liquid storage unit is made of PE or PVC.

[0017] Optionally, the cleaning solution includes a mixture of hydrochloric acid and sodium hypochlorite.

[0018] Optionally, during cleaning, the pressure of the cleaning fluid sprayed by the nozzle includes 0.6 MPa, and the cleaning time for each cleaning session includes 2 minutes.

[0019] As described above, the semiconductor electrode cleaning apparatus of the present invention includes the electrode, the cleaning assembly, and the power unit; wherein, the cleaning assembly includes the nozzle, the connecting pipe, and the liquid storage unit, and the connecting pipe connects the liquid storage unit and the nozzle, providing cleaning fluid for cleaning the electrode to the nozzle through the liquid storage unit; the power unit is connected to the cleaning assembly, providing cleaning power to the cleaning fluid through the power unit. The semiconductor electrode cleaning apparatus of the present invention can significantly improve the cleanliness of the electrode and extend its service life. Attached Figure Description

[0020] Figure 1 The diagram shown is a schematic representation of the semiconductor electrode cleaning apparatus in an embodiment of the present invention.

[0021] Figure 2 The diagram shows a structural schematic of nozzles with different morphologies in an embodiment of the present invention.

[0022] Explanation of reference numerals in the attached figures

[0023] 100 electrodes

[0024] 200 Cleaning Components

[0025] 210 nozzle

[0026] 211 First nozzle

[0027] 212 Second nozzle

[0028] 213 Third nozzle

[0029] 220 connecting pipe

[0030] 230 Liquid Storage Unit

[0031] 300 power unit

[0032] 400 regulating valve

[0033] 500 controller

[0034] 600 display screen Detailed Implementation

[0035] Electrode maintenance involves regular and meticulous procedures tailored to the specific operating environment. For example, in semiconductor wastewater treatment units, pH electrodes require weekly manual cleaning, SS electrodes undergo professional cleaning every two weeks, DO electrodes require monthly deep cleaning, and CIT electrodes also require monthly thorough cleaning to ensure optimal working condition. However, despite these strict maintenance procedures, electrode scaling is still difficult to avoid due to the unique properties of semiconductor wastewater.

[0036] To address the problem of electrode scaling, this invention provides a semiconductor electrode cleaning device to improve electrode cleanliness and extend electrode lifespan.

[0037] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0038] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the accompanying drawings during use or operation, and may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact. Furthermore, when a layer is referred to as “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0039] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0040] like Figure 1 This embodiment provides a semiconductor electrode cleaning device, which includes an electrode 100, a cleaning assembly 200, and a power unit 300. The cleaning assembly 200 includes a nozzle 210, a connecting pipe 220, and a liquid storage unit 230. The connecting pipe 220 connects the liquid storage unit 230 and the nozzle 210, and provides cleaning fluid for cleaning the electrode 100 to the nozzle 210 through the liquid storage unit 230. The power unit 300 is connected to the cleaning assembly 200 and provides cleaning power to the cleaning fluid.

[0041] Specifically, the electrode 100 may include a pH electrode for monitoring acidity / alkalinity, an SS electrode for monitoring suspended solids, a DO electrode for monitoring dissolved oxygen, and a CIT electrode for detecting specific gravity, etc. The types of electrodes 100 are not excessively limited here. It is understood that the electrode 100 may also be electrically connected to electronic components such as a display screen 600 to facilitate the observation of monitoring results when the electrode 100 is used for monitoring.

[0042] Since the electrode 100 needs to be in direct contact with the liquid being monitored during monitoring, such as the electrodes in a semiconductor wastewater treatment unit, the liquid being monitored often contains a large amount of suspended solids and impurities due to its complex properties. Over time, these suspended solids and impurities will adhere to the surface of the electrode, causing scale buildup, which can easily interfere with the electrode's measurement. Therefore, in this embodiment, the cleaning component 200 and the power unit 300 are added to clean the electrode 100, improving its cleanliness and extending its service life.

[0043] The application scenarios of the electrode 100 are not limited to electrodes in semiconductor wastewater treatment units, and the type of electrode 100 can be selected as needed.

[0044] The liquid storage unit 230 is used to load the cleaning liquid required for cleaning the electrode 100, and the connecting pipe 220 is used to connect the liquid storage unit 230 and the nozzle 210. The connection method of the nozzle 210, the connecting pipe 220 and the liquid storage unit 230 can be selected as needed, such as threaded connection, snap-fit ​​connection, etc.

[0045] The power unit 300 is connected to the cleaning assembly 200. The main function of the power unit 300 is to provide cleaning power to the cleaning fluid to meet the cleaning requirements. The power unit 300 can be connected to the liquid storage unit 230 in the cleaning assembly 200, the connecting pipe 220, or the nozzle 210. The type of power unit 300 can be a motor, pump, etc., and no excessive restrictions are imposed here.

[0046] As an example, the nozzle 210 may include a rotary nozzle, which may rotate in a manner that includes 360° reciprocating rotation or 360° circumferential rotation.

[0047] Specifically, the nozzle 210 can be disposed around or to the side of the electrode 100, but the electrode 100 must be exposed to ensure sufficient contact between the electrode 100 and the liquid to be tested. The nozzle 210 can be a fixed nozzle or a rotary nozzle. In this embodiment, the nozzle 210 is preferably a rotary nozzle. The rotation of the rotary nozzle can include 360° reciprocating rotation or 360° circumferential rotation, so as to achieve all-round cleaning of the electrode 100 and ensure cleaning effect. The rotation method of the rotary nozzle can be selected as needed, such as 360° reciprocating rotation or 360° repeating circumferential rotation.

[0048] Furthermore, in this embodiment, the rotary nozzle is preferably an automatic rotary nozzle, such as a rotary nozzle that rotates automatically through the reaction force of water flow or driven by a motor, so as to achieve 360° all-round spraying and ensure a cleaning effect without dead angles.

[0049] Of course, in another embodiment, the rotary nozzle can also be connected to a control unit (not shown) so that the rotation mode and rotation angle of the rotary nozzle can be manually controlled by the control unit to meet the cleaning requirements.

[0050] As an example, the nozzle 210 may be disposed on the periphery of the electrode 100, having an opening that exposes the electrode 100, and the nozzle 210 may be arc-shaped or rectangular.

[0051] For details, please refer to Figure 1 and Figure 2 The shape of the nozzle 210 shown in (a) is the cross-sectional shape of the nozzle 210. In this embodiment, the nozzle 210 is an arc-shaped nozzle with an opening that exposes the electrode 100. However, the shape of the nozzle 210 is not limited to this. For example, see [reference needed]. Figure 2(b) illustrates that the nozzle 210 has a rectangular shape, wherein the rectangle includes a positive direction or a rectangle.

[0052] In another embodiment, the nozzle 210 may also surround the electrode 100, and the nozzle 210 may be in the form of a hollowed-out mesh.

[0053] For details, please refer to Figure 2 (c) illustrates a spherical shape with a hollowed-out mesh, whereby the nozzle 210 can be composed of several intersecting connecting beams and can surround the electrode 100. The hollowed-out mesh allows the electrode 100 to fully contact the liquid to be tested. The advantage of this structure is that even if the nozzle 210 is a fixed nozzle, the electrode 100 can still be cleaned from all directions by the nozzles located on the nozzle 210.

[0054] Understandable. Figure 2 (c) only illustrates a spherical perforated mesh nozzle. Depending on the needs, perforated mesh nozzles in rectangular, trapezoidal, or triangular shapes can also be provided.

[0055] As an example, the nozzle 210 is provided with N>1 nozzles, and the area of ​​the nozzles adjacent to the connecting pipe 220 is smaller than the area of ​​the nozzles far from the connecting pipe 220.

[0056] For details, please refer to Figure 1 The nozzle 210 is provided with nozzles of N=6 arranged symmetrically with the connecting pipe 220 as the axis of symmetry. However, the arrangement of the nozzles is not limited to this; they can also be asymmetrically arranged, and the value of N can be, for example, 3, 5, 10, 20, etc. In this embodiment, the nozzles on the nozzle 210 adjacent to the connecting pipe 220 are designated as the first nozzle 211, the nozzles away from the connecting pipe 220 are designated as the third nozzle 213, and the nozzles located between the first nozzle 211 and the third nozzle 213 are designated as the second nozzle 212. Preferably, the area of ​​the first nozzle 211 is smaller than the area of ​​the second nozzle 212, and the area of ​​the second nozzle 212 is smaller than the area of ​​the third nozzle 213. Thus, by setting the area of ​​the nozzles, each nozzle can provide an equivalent amount of cleaning fluid.

[0057] As an example, the system may also include a controller 500 and a regulating valve 400, the regulating valve 400 being disposed on the connecting pipe 220 and communicating with the controller 500, the communication method including one or a combination of wired communication and wireless communication.

[0058] For details, please refer to Figure 1In this embodiment, the semiconductor electrode cleaning device includes a regulating valve 400 disposed on the connecting pipe 220 and a controller 500 communicating with the regulating valve 400. The controller 500 automatically regulates the regulating valve 400, such as adjusting its on / off state, flow rate, and pressure, to provide the cleaning fluid that meets the cleaning requirements. The type of regulating valve 400 can be selected as needed; the communication method between the regulating valve 400 and the controller 500 can also be selected as needed.

[0059] As an example, the cleaning solution may include a mixture of hydrochloric acid and sodium hypochlorite.

[0060] Specifically, in this embodiment, since the electrode 100 is used in a semiconductor wastewater treatment unit, the cleaning solution is preferably a mixture of hydrochloric acid and sodium hypochlorite to effectively clean the electrode 100. However, the application scenarios of the electrode 100 are not limited to this, and therefore the type of cleaning solution is not limited to this either. For example, the cleaning solution can also be deionized water.

[0061] As an example, the material of the connecting pipe 220 may include PE or PVC; the material of the nozzle 210 may include PE or PVC; and the material of the liquid storage unit 230 may include PE or PVC.

[0062] Specifically, as needed, the materials of the liquid storage unit 230, the connecting pipe 220, and the nozzle 210 are preferably corrosion-resistant to extend their service life. In this embodiment, the materials of the liquid storage unit 230, the connecting pipe 220, and the nozzle 210 are preferably PE or PVC, commonly used in the semiconductor industry, but the selection of materials for the liquid storage unit 230, the connecting pipe 220, and the nozzle 210 is not limited to these. The connecting pipe 220 may include a DN50 pipe, i.e., a pipe with a nominal diameter of 50 mm, but is not limited to this.

[0063] As an example, during cleaning, the pressure of the cleaning fluid sprayed by the nozzle 210 may include 0.6 MPa, and the cleaning time may include 2 minutes.

[0064] Specifically, in order to achieve a good cleaning effect on the electrode 100, in this embodiment, it is preferred that the pressure of the cleaning fluid sprayed by the nozzle 210 is 0.6 MPa and the cleaning time is 2 minutes each time. However, the control of the pressure of the cleaning fluid sprayed by the nozzle 210 and the cleaning time each time is not limited to these.

[0065] In summary, the semiconductor electrode cleaning apparatus of the present invention includes the electrode, the cleaning assembly, and the power unit; wherein, the cleaning assembly includes the nozzle, the connecting pipe, and the liquid storage unit, and the connecting pipe connects the liquid storage unit and the nozzle, providing cleaning fluid for cleaning the electrode to the nozzle through the liquid storage unit; the power unit is connected to the cleaning assembly, providing cleaning power to the cleaning fluid through the power unit. The semiconductor electrode cleaning apparatus of the present invention can significantly improve the cleanliness of the electrode and extend its service life.

[0066] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A semiconductor electrode cleaning apparatus, characterized in that, The semiconductor electrode cleaning apparatus includes: electrode; A cleaning assembly, comprising a nozzle, a connecting pipe, and a liquid storage unit, wherein the connecting pipe connects the liquid storage unit to the nozzle, and the liquid storage unit provides cleaning fluid for cleaning the electrode to the nozzle; A power unit is connected to the cleaning assembly and provides cleaning power to the cleaning fluid through the power unit.

2. The semiconductor electrode cleaning apparatus according to claim 1, characterized in that: The nozzle includes a rotary nozzle, and the rotary nozzle can rotate in either a 360° reciprocating rotation or a 360° circumferential rotation.

3. The semiconductor electrode cleaning apparatus according to claim 2, characterized in that: The rotary nozzle includes an automatic rotary nozzle.

4. The semiconductor electrode cleaning apparatus according to claim 1, characterized in that: The nozzle is disposed around the electrode, has an opening that exposes the electrode, and the nozzle has an arc-shaped or rectangular shape.

5. The semiconductor electrode cleaning apparatus according to claim 1, characterized in that: The nozzle surrounds the electrode and has a perforated mesh shape.

6. The semiconductor electrode cleaning apparatus according to claim 1, characterized in that: The nozzle is provided with N>1 nozzles, and the area of ​​the nozzles adjacent to the connecting pipe is smaller than the area of ​​the nozzles far from the connecting pipe.

7. The semiconductor electrode cleaning apparatus according to claim 1, characterized in that: It also includes a controller and a regulating valve, the regulating valve being disposed on the connecting pipe and communicating with the controller, the communication method including one or a combination of wired communication and wireless communication.

8. The semiconductor electrode cleaning apparatus according to claim 1, characterized in that: The connecting pipe is made of PE or PVC; the nozzle is made of PE or PVC; and the liquid storage unit is made of PE or PVC.

9. The semiconductor electrode cleaning apparatus according to claim 1, characterized in that: The cleaning solution comprises a mixture of hydrochloric acid and sodium hypochlorite.

10. The semiconductor electrode cleaning apparatus according to claim 1, characterized in that: During cleaning, the pressure of the cleaning fluid sprayed by the nozzle is 0.6 MPa, and the cleaning time for each cleaning session is 2 minutes.

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