Method for operating a particle radiation device, computer program product and particle radiation device for performing the method

Abstract

The invention relates to a method for operating a particle radiation device for imaging, analyzing and / or processing an object. The invention further relates to a computer program product and to a particle radiation device for carrying out the method. In the method, the distance is determined, wherein the distance is given by (a) an object distance between the outer boundary of the objective lens and the object or (b) a focal plane distance between the outer boundary of the objective lens and the focal plane of the objective lens. Furthermore, a deflection device is used to deflect the particle beam into a position along the optical axis of the particle radiation device, which position is associated with the determined distance, as a function of the determined distance, the deflection device having at least one first deflection unit and at least one second deflection unit. The axial distance of the central path of the particle beam at that position along the optical axis is less than all other axial distances of the particle beam perpendicular to the optical axis of the particle radiation apparatus.

Description

Technical Field

[0001] This invention relates to a method for operating a particle radiation device for imaging, analyzing, and / or processing objects. Furthermore, the invention also relates to a computer program product and a particle radiation device for performing the method. The particle radiation device is designed, for example, as an electron radiation device and / or an ion radiation device. Background Technology

[0002] Electron radiation equipment, especially scanning electron microscopes (hereinafter referred to as SEM) and / or transmission electron microscopes (hereinafter referred to as TEM), are used to study objects (hereinafter referred to as samples) to gain knowledge about their properties and behavior under specific conditions.

[0003] In the case of SEM, an electron beam (hereinafter referred to as the primary electron beam) is generated by a beam generator and focused onto the object under study by a beam guiding system. The primary electron beam is guided across the surface of the object under study by a deflection device in the form of a scanning device. The electrons of the primary electron beam interact with the object under study. As a result of the interaction, electrons are emitted from the object (so-called secondary electrons) and electrons from the primary electron beam are reflected back (so-called backscattered electrons). The secondary electrons and backscattered electrons are detected and used to generate an image. Thus, an image of the object under study is obtained. In addition, interaction radiation, such as X-ray radiation and / or cathodoluminescence, is generated during the interaction and detected by a detector for analysis of the object and subsequently evaluated.

[0004] In the case of TEM, a primary electron beam is generated using a beam generator and guided to the object under study using a beam guiding system. The primary electron beam penetrates the object. As the primary electron beam passes through the object, the electrons in the primary electron beam interact with the material of the object. The electrons that have penetrated the object are imaged on a screen or on a detector (e.g., a camera) by a system consisting of an objective lens and a projection lens. Here, imaging can also be performed in the scanning mode of TEM. This type of TEM is generally referred to as STEM. Alternatively, it can be proposed to image the object by using an additional detector to detect electrons scattered back at the object and / or secondary electrons emitted from the object.

[0005] It is known that the functions of STEM and SEM are combined in a single particle radiation device. Therefore, objects can be studied using SEM and / or STEM functions through such a particle radiation device.

[0006] Furthermore, particle radiation devices with ion radiation columns are known. Ions for processing objects are generated by means of an ion beam generator arranged in the ion radiation column. During processing, for example, the material of the object is abraded, or material is applied to the object by, for example, by conveying gas. Attached to or alternative to this, the ions are used for imaging.

[0007] Furthermore, it is known from existing technologies that combined devices are used to study objects, where not only electrons but also ions can be directed onto the object under study. For example, it is known to additionally equip a SEM with an ion radiation column. Ions are generated by means of an ion beam generator arranged in the ion radiation column, and these ions are used for object preparation (e.g., grinding material onto the object or applying material to the object) or for imaging. For this purpose, a deflection device in the form of a scanning device is used to sweep the ions across the object. The SEM is used here particularly for observing the preparation process, but also for further study of prepared or unprepared objects.

[0008] When generating an image of an object, it is possible to image the object with high local resolution using a particle radiation device. This is achieved, in particular, by the very small diameter of the primary electron beam in the object's plane. Furthermore, the higher the initial acceleration of the electrons in the primary electron beam within the particle radiation device, and the higher the deceleration to the desired energy (called the landing energy) in the objective lens or in the region between the objective and the object, the higher the local resolution can be. For example, electrons in the primary electron beam are accelerated with an accelerating voltage of 2 kV to 30 kV and guided through the electron radiation column of the particle radiation device. Only in the region between the objective lens and the object are the electrons in the primary electron beam decelerated to the desired landing energy, at which they strike the object. For example, the landing energy of the electrons in the primary electron beam is in the range of 10 eV to 30 keV.

[0009] To enable a particle beam to sweep across an object, it is known to arrange a scanner device at a particle radiating device. For example, the scanner device is designed as a deflector. The deflector device has a first deflection unit and a second deflection unit, which are arranged sequentially along the optical axis of the particle radiating device. Through the combination of deflections of the particle beam (which can be achieved through the first and second deflection units), the position of the virtual inflection point (Kipppunkt) of the particle beam can be moved along the optical axis of the particle radiating device, where the deflection appears as if it were produced by tilting around this inflection point.

[0010] It is known to operate particle radiation devices in a so-called "fisheye mode" to produce large images of objects (e.g., in the form of large semiconductor wafers). To achieve the "fisheye mode," a first deflection unit and a second deflection unit deflect in the same direction. This results in a fairly large overview image of the object. In other words, the fisheye mode provides a fairly large image field for the particle radiation device.

[0011] For reference to the prior art, see DE 10 2010 053 194 A1 and DE 10 2011 076 893 A1. Summary of the Invention

[0012] The purpose of this invention is to provide a method and a particle radiation device for performing the method, which enables a large image field of the particle radiation device to be achieved in different operating modes of the particle radiation device.

[0013] According to the present invention, this objective is achieved by a method having the features described in claim 1 or 12. A computer program product having program code is provided by the features described in claim 18, which controls a particle radiation device to perform the method. Furthermore, a particle radiation device for imaging, analyzing, and / or processing objects having the features described in claim 19 is also provided. Other features of the invention are derived from the following description, the appended claims, and / or the drawings.

[0014] The method according to the invention is used to operate a particle radiation device for imaging, analyzing, and / or processing an object. The particle radiation device has at least one beam generator for generating a particle beam carrying charged particles, such as electrons or ions. Furthermore, the particle radiation device has an objective lens for focusing the particle beam onto the object.

[0015] In the method according to the invention, the distance is determined using a control device of the particle radiation apparatus. The distance is given by (a) the object distance between the outer boundary of the objective lens of the particle radiation apparatus and the object, or (b) the focal plane distance between the outer boundary of the objective lens of the particle radiation apparatus and the focal plane of the objective lens. The distance described above, according to case (a) or case (b), is also referred to as the working distance. The method for determining this distance will be explained in detail below.

[0016] The particle radiation device has a deflection mechanism comprising at least one first deflection unit and at least one second deflection unit. Viewed from the beam generator toward the objective lens, the first deflection unit is arranged first, followed by the second deflection unit, along the optical axis. For example, the first and / or second deflection units are arranged within the objective lens of the particle radiation device. In particular, it is proposed that the first and / or second deflection units are arranged within the objective lens along the optical axis of the particle radiation device. The first deflection unit is designed, for example, to be an electrostatic and / or magnetic deflection unit. Furthermore, it is proposed, for example, that the second deflection unit is designed to be electrostatic and / or magnetic.

[0017] According to the method of the invention, a deflection device is used to deflect a particle beam generated by the beam generator of the particle radiation device to a position along the optical axis of the particle radiation device according to a determined distance (i.e., a determined working distance). Therefore, this position is associated with the determined distance. In other words, the particle beam is guided to this position along the optical axis of the particle radiation device by the deflection device according to the determined working distance. This position of the particle beam along the optical axis of the particle radiation device is, for example, the turning point of the particle beam as explained above. At this position along the optical axis of the particle radiation device, the central path of the particle beam has an axial distance perpendicular to the optical axis of the particle radiation device. The central path is essentially the middle path of the particle beam. All paths of the particle beam extend around this middle path. The sum of the paths of the particle beam determines the diameter of the particle beam.

[0018] At the determined distance (i.e., the determined working distance), the axial distance of the center path of the particle beam at this position along the optical axis is less than all other axial distances of the center path of the particle beam perpendicular to the optical axis, wherein for the distance determined according to case (a), the other axial distances are arranged between the center of the second deflection unit of the deflection device and the object, and wherein for the distance determined according to case (b), the other axial distances are arranged between the center of the second deflection unit of the deflection device and the focal plane.

[0019] This invention ensures that a sufficiently large image field of the particle radiation device can always be achieved regardless of the determined distance (i.e., different determined working distances). In other words, by selecting the aforementioned position (i.e., the turning point of the particle beam) along the optical axis according to the determined distance (i.e., the determined working distance), the desired image field of the particle radiation device can be achieved. The method according to the invention can be performed manually and / or automatically.

[0020] In an embodiment of the method according to the invention, it is additionally or alternatively proposed that the distance according to case (a) (i.e., determining the working distance) be determined by the relative movement of the object relative to the objective lens and / or by determining the object distance. Determining the object distance includes, for example, measuring the object distance and / or reading the object distance at a measuring device. In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that the distance according to case (b) be determined by manipulating the objective lens to position the focal plane of the objective lens and / or by determining the focal plane distance. Determining the focal plane distance includes, for example, measuring the focal plane distance and / or reading the focal plane distance at a measuring device.

[0021] In another embodiment of the method according to the invention, it is additionally or alternatively proposed that the distance (i.e., the working distance) be determined by at least one of the following method steps: (i) moving an object holder with an object disposed thereon along the optical axis of the particle radiating device; (ii) moving the object holder with an object disposed thereon relative to the optical axis of the particle radiating device, wherein the movement is not perpendicular to the optical axis; (iii) moving the objective lens of the particle radiating device along the optical axis of the particle radiating device using a moving device; and (iv) moving the objective lens of the particle radiating device relative to the optical axis using a moving device, wherein the movement is not perpendicular to the optical axis.

[0022] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that the position of the particle beam along the optical axis, associated with a determined distance (i.e., a determined working distance), be loaded into the control device from a database and / or storage unit. The particle beam is then deflected using a deflection device, thereby guiding the particle beam to the loaded position. In other words, in this embodiment of the method according to the invention, the relationship between the position of the inflection point and the working distance is stored in the database and / or storage unit. If the working distance is determined, the associated position can be loaded and set from the database and / or storage unit.

[0023] In another embodiment of the method according to the invention, it is additionally or alternatively proposed that a control device be used to calculate the position of the particle beam along the optical axis associated with a determined distance (i.e., a determined working distance). For example, the associated position can be calculated by simulating the trajectory of the particle beam under preset and settable conditions. These conditions include, for example, control parameter values ​​of structural units of the particle radiating device, by which these control parameter values ​​can influence the trajectory and / or shape of the particle beam within the particle radiating device. Linear approximation calculations, or methods also known as "ray tracing," can be used in particular during simulation. For example, after calculating the position associated with the determined distance, a deflection device is used to deflect the particle beam to this position along the optical axis of the particle radiating device.

[0024] As proposed herein, or alternatively herein, an image of the object is formed. An objective lens is excited with an objective current so that the image of the object meets the desired imaging criteria. The distance is then determined using the objective current.

[0025] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that the associated position of the particle beam along the optical axis also changes as the determined distance (i.e., the determined working distance) changes. Therefore, in this embodiment of the method according to the invention, the determined distance is a first distance, the associated position of the particle beam along the optical axis is a first associated position, the object distance is a first object distance, the focal plane distance is a first focal plane distance, and the axial distance of the center path of the particle beam at the first associated position is a first axial distance. This embodiment of the method according to the invention includes the following method steps:

[0026] - A second distance is determined using the control device of the particle radiation device, wherein the second distance is greater than the first distance, and wherein the second distance is given by (c) a second object distance between the outer boundary of the objective lens of the particle radiation device and the object or (d) a second focal plane distance between the outer boundary of the objective lens of the particle radiation device and the focal plane of the objective lens;

[0027] - A deflection device is used to deflect the particle beam to a second position along the optical axis of the particle radiating device, associated with the second distance, according to a determined second distance. At the second position along the optical axis, the center path of the particle beam has a second axial distance perpendicular to the optical axis of the particle radiating device, wherein, in the case of the determined second distance, the second axial distance of the center path of the particle beam at the second position along the optical axis is less than all other axial distances of the center path of the particle beam perpendicular to the optical axis of the particle radiating device. For the second distance determined according to case (c), the other axial distances are arranged between the center of the second deflection unit of the deflection device and the object. For the second distance determined according to case (d), the other axial distances are arranged between the center of the second deflection unit of the deflection device and the focal plane. The distance between the second position and the outer boundary of the objective lens is less than the distance between the first position and the outer boundary of the objective lens.

[0028] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that a control device be used to set and / or determine the landing energy of the particles of the particle beam by which they strike the object. For example, determining the landing energy includes measuring the landing energy and / or reading the landing energy from a landing energy measuring device. A deflection device is additionally used to deflect the particle beam to an associated position along the optical axis of the particle radiating device according to the landing energy. For example, in the embodiment of the method according to the invention explained herein, a control device having acceleration and / or deceleration devices for the particles of the particle beam is used as the control device.

[0029] In embodiments of the method according to the invention, it is additionally or alternatively proposed that the location associated with the determined distance is additionally associated with the landing energy. In other words, the location associated with the determined distance depends on the landing energy. For example, it is proposed that the location associated with the determined distance and dependent on the landing energy be loaded into the control device from a database and / or storage unit.

[0030] In another embodiment of the method according to the invention, it is additionally or alternatively proposed that the position along the optical axis of the particle beam associated with the determined distance when the energy is below a threshold landing energy is a position that has a smaller distance from the outer boundary of the objective lens compared to (i) the position along the optical axis of the particle beam when the energy exceeds the threshold landing energy or (ii) when the landing energy corresponds to the threshold landing energy.

[0031] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed to reduce imaging errors in the resulting image. To this end, in this embodiment of the method according to the invention, the scanning device of the particle radiation device is manipulated according to the landing energy and / or a determined distance to sweep the particle beam across the object, thereby reducing and / or eliminating display errors of the object. For example, a deflection device is designed as the scanning device. In particular, it is proposed that a first deflection unit and / or a second deflection unit form the scanning device. At the same determined distance, the lower the landing energy, the more nonlinear the way the scanning device is excited. The excitation of the first and second deflection units can be described by a set of functions that operate through index i and depend on the desired positions x and y of the particle beam on the object:

[0032]

[0033] The function f shown above i In this study, only linear and cubic terms were considered. However, constant terms (to shift the raster image field) and / or quadratic terms (to compensate for deviations in component symmetry) can be added.

[0034] These functions operate via indices 1x, 1y, 2x, and 2y, which correspond to the x and y excitations of the first and second deflection units.

[0035] In the ideal case where there are no component tolerances and calibration is perfect, the linear component is constructed as follows:

[0036]

[0037]

[0038]

[0039]

[0040]

[0041]

[0042]

[0043]

[0044] The position along the optical axis is determined by the ratio of U to V. Scaling of U and V changes the size of the image field. The orientation of the image field can be rotated by φ. Several variables are considered by τ: (i) the mounting position of the second deflection unit relative to the first deflection unit, (ii) the effect of Larmor rotation of the objective axial magnetic field in the region between the two deflection units, and (iii) the axial distance of the center path of the particle beam at the position along the optical axis.

[0045] 16 cubic coefficients c i to f i There are interrelationships among (i = 1x, 1y, 2x, and 2y), depending on whether the source of the nonlinear deflection (distortion) of the particle beam to be compensated is in the objective lens or in the multipole of the scanner device. Under ideal calibration and component conditions of the particle radiation device, in the absence of grid rotation (φ = 0), the following applies to the first deflection unit: d 1x = f 1x = c 1y = e 1y = 0. However, since τ is necessary, this does not apply to the second deflection unit. In the case of a purely electrostatic objective and a deflection unit aligned with each other, τ is 0, therefore d also applies here. 2x =f 2x = c 2y = e 2y = 0.

[0046] If the linear component of the excitation in the scanner remains constant, then with the same landing energy, the greater the determined distance, the greater the nonlinear component of the excitation in the scanner.

[0047] The present invention also relates to another method. Another method according to the invention is used to operate a particle radiation device for imaging, analyzing, and / or processing an object. The particle radiation device has at least one beam generator for generating a particle beam carrying charged particles, such as electrons or ions. Furthermore, the particle radiation device has an objective lens for focusing the particle beam onto the object.

[0048] In another method according to the invention, a control device is used to set the landing energy of the particles of the particle beam generated by the beam generator of the particle radiation device so as to strike the object, and / or the landing energy is determined by the control device. Determining the landing energy includes, for example, measuring the landing energy and / or reading the landing energy from a measuring device.

[0049] A particle radiation apparatus for implementing another method according to the invention has a deflection device comprising at least one first deflection unit and at least one second deflection unit. Viewed from the beam generator toward the objective lens, the first deflection unit is arranged first, followed by the second deflection unit, along the optical axis. For example, the first deflection unit and / or the second deflection unit are arranged within the objective lens of the particle radiation apparatus. In particular, it is proposed that the first deflection unit and / or the second deflection unit are arranged within the objective lens along the optical axis of the particle radiation apparatus. The first deflection unit is, for example, designed to be electrostatic and / or magnetic. Furthermore, it is proposed, for example, that the second deflection unit is designed to be electrostatic and / or magnetic.

[0050] In another method according to the invention, a deflection device is used to deflect the particle beam generated by the beam generator of the particle radiation device to a position along the optical axis of the particle radiation device associated with a set and / or determined landing energy (i.e., based on the set and / or determined landing energy). In other words, the particle beam is guided to this position along the optical axis of the particle radiation device by the deflection device according to the set and / or determined landing energy. The aforementioned associated position of the particle beam along the optical axis of the particle radiation device is, for example, the turning point of the particle beam as explained above. At this position along the optical axis of the particle radiation device, the center path of the particle beam has an axial distance perpendicular to the optical axis of the particle radiation device. The above-described embodiments for defining the center path also apply here. In the case of the set and / or determined landing energy, the axial distance of the center path of the particle beam at this position along the optical axis is less than all other axial distances of the center path of the particle beam perpendicular to the optical axis. Furthermore, given the set and / or determined landing energy, the other axis distances are arranged between the center of the second deflection unit of the deflection device and the object for case (a), or between the center of the second deflection unit of the deflection device and the focal plane for case (b).

[0051] Another method according to the invention ensures that a sufficiently large image field of the particle radiator can always be achieved under different landing energies. In other words, the aforementioned position of the particle beam along the optical axis (i.e., the turning point of the particle beam) is selected according to the set and / or determined landing energy, so that the desired image field of the particle radiator can be achieved. The other method according to the invention can be performed manually and / or automatically.

[0052] In another embodiment of the invention, it is additionally or alternatively proposed that a control device having an acceleration and / or deceleration device for particles in a particle beam be used as the control device. The landing energy of the particles in the particle radiation device can be set by means of the acceleration and / or deceleration device.

[0053] In another embodiment of another method according to the invention, it is additionally or alternatively proposed that the position of the particle beam along the optical axis, associated with a set and / or determined landing energy, be loaded into the control device from a database and / or storage unit. The particle beam is deflected using a deflection device, thereby guiding the particle beam to the loaded position. In other words, the relationship between the position of the inflection point and the set and / or determined landing energy is stored in the database and / or storage unit. If the landing energy has been set and / or the landing energy possessed by the particles of the particle beam has been determined, the associated position can be loaded from the database and / or storage unit. The particle beam is deflected using a deflection device, thereby guiding the particle beam to the loaded position.

[0054] In yet another embodiment of another method according to the invention, it is additionally or alternatively proposed that the position of the particle beam along the optical axis associated with the set and / or determined landing energy when below a threshold landing energy is a position that has a smaller distance from the outer boundary of the objective lens compared to (i) the position of the particle beam along the optical axis when the threshold landing energy is exceeded or (ii) when the landing energy corresponds to the threshold landing energy.

[0055] In an additional or alternative embodiment of another method according to the invention, it is proposed to reduce imaging errors in the resulting image. To this end, in this embodiment of another method according to the invention, the scanner device of the particle radiation device is manipulated according to the landing energy to scan the object with a particle beam, thereby reducing and / or eliminating display errors of the object. For example, a deflection device is designed as the scanner device. In particular, it is proposed that a first deflection unit and / or a second deflection unit form the scanner device. With the same working distance, the lower the landing energy, the more nonlinear the deflection of the particle beam by the scanner device becomes. If the linear portion of the excitation in the scanner device remains constant, then with the same set and / or determined landing energy, the greater the working distance, the greater the nonlinear portion of the excitation in the scanner device.

[0056] As described above, in yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that an electrostatic and / or magnetic deflection device be used as the deflection device.

[0057] All the above and following embodiments of the method according to the present invention are not limited to the described order of method steps. The present invention also includes different orders of method steps suitable for achieving the significance and objectives of the present invention. Alternatively or additionally, in the method according to the present invention, it is also proposed to perform at least two method steps in parallel. Furthermore, the above and following embodiments of the method according to the present invention are not limited to the complete scope of all method steps mentioned above or below. In particular, it is proposed that, in other embodiments, one or more method steps in the above or following method steps are omitted.

[0058] The present invention also relates to a computer program product having program code that can be loaded into or loaded into a processor of a particle radiation device, wherein when the program code is executed in the processor, it controls the particle radiation device to implement a method having at least one of the features described above or below, or a method having a combination of at least two of the features described above or below. In other words, the present invention also relates to a non-volatile computer-readable medium having software that can be loaded into or loaded into a processor of a particle radiation device, wherein when the software is executed in the processor, it controls the particle radiation device to implement a method having at least one of the features described above or below, or a method having a combination of at least two of the features described above or below. The software includes executable code for performing at least one method step.

[0059] In this regard, the present invention also relates to a processor arranged at a particle radiation device and designed to implement a method having at least one of the features described above or below, or a method having a combination of at least two of the features described above or below.

[0060] The present invention also relates to a particle radiation device for imaging, analyzing, and / or processing objects, which has been described above and will be further elaborated below. A brief overview is provided below. The particle radiation device according to the invention has at least one beam generator for generating a particle beam carrying charged particles, such as electrons or ions. Furthermore, the particle radiation device according to the invention has at least one objective lens for focusing the particle beam onto an object. The object is designed to be movable relative to the objective lens. Additionally, the particle radiation device according to the invention has at least one deflection device, which includes at least one first deflection unit and at least one second deflection unit. Viewed from the beam generator toward the objective lens, the first deflection unit is arranged first, followed by the second deflection unit, along the optical axis. For example, the first and / or second deflection units are arranged within the objective lens of the particle radiation device. In particular, the first and / or second deflection units are arranged within the objective lens along the optical axis of the particle radiation device. The first deflection unit is designed, for example, to be an electrostatic and / or magnetic deflection unit. Furthermore, for example, it is proposed that the second deflection unit is designed to be electrostatic and / or magnetic. Additionally, the particle radiation device according to the invention has at least one detector for detecting interacting particles and / or interacting radiation generated by the interaction between the particle beam and the object when the particle beam strikes the object. Furthermore, the method according to the invention has at least one control device, which includes at least one processor. A computer program product having the above-described features is loaded in the processor.

[0061] In an embodiment of the particle radiation device according to the invention, it is additionally or alternatively proposed that the particle radiation device has at least one accelerating device for accelerating particles, and / or a decelerating device for decelerating particles in the particle radiation device.

[0062] In another embodiment of the particle radiation device according to the invention, it is additionally or alternatively proposed that the particle radiation device has an object holder designed to be movable, at which an object can be arranged. For example, the object holder is a stage (so-called platform) designed to be movable. Additionally or alternatively proposed herein, the particle radiation device according to the invention has a moving device for moving the objective lens.

[0063] In yet another embodiment of the particle radiation device according to the invention, it is additionally or alternatively proposed that a first deflection unit is arranged in the objective lens. It is additionally or alternatively proposed that a second deflection unit is arranged in the objective lens.

[0064] In yet another embodiment of the particle radiation device according to the invention, additionally or alternatively, a beam generator is designed as a first beam generator and the particle beam is formed as a first particle beam carrying a first charged particle. An objective lens is designed as a first objective lens for focusing the first particle beam onto an object. Furthermore, the particle radiation device according to the invention has at least one second beam generator for generating a second particle beam carrying a second charged particle. Furthermore, the particle radiation device according to the invention has at least one second objective lens for focusing the second particle beam onto an object.

[0065] In particular, it is proposed that the particle radiation device according to the present invention is designed as an electron radiation device and / or an ion radiation device. Attached Figure Description

[0066] Further practical embodiments and advantages of the present invention are described below with reference to the accompanying drawings. In the drawings:

[0067] Figure 1 A schematic diagram of a first embodiment of a particle radiation device according to the present invention is shown;

[0068] Figure 2 A schematic diagram of a second embodiment of the particle radiation device according to the present invention is shown;

[0069] Figure 3 A schematic diagram of a third embodiment of the particle radiation device according to the present invention is shown;

[0070] Figure 4 A schematic diagram illustrating an embodiment of the movable platform is shown;

[0071] Figure 5 It shows that according to Figure 4 Another schematic diagram of an implementation of the movable platform;

[0072] Figure 6 A schematic diagram of the process according to a first embodiment of the method of the present invention is shown;

[0073] Figure 7 A schematic diagram of the process according to a second embodiment of the method of the present invention is shown;

[0074] Figure 8 A schematic diagram of the flow of a third embodiment of the method according to the present invention is shown;

[0075] Figure 9 A schematic diagram of the process according to a fourth embodiment of the method of the present invention is shown;

[0076] Figure 10A schematic diagram of the process of a fifth embodiment of the method according to the present invention is shown;

[0077] Figure 11 A schematic diagram of the process according to a sixth embodiment of the method of the present invention is shown; and

[0078] Figure 12 A schematic diagram of the flow of a seventh embodiment of the method according to the present invention is shown. Detailed Implementation

[0079] The invention will now be described in detail with the aid of particle radiation devices in the form of SEMs and in the form of a combination of electron radiation columns and ion radiation columns. It is explicitly stated that the invention can be applied to any particle radiation device, especially any electron radiation device and / or any ion radiation device.

[0080] Figure 1 A schematic diagram of an embodiment of the particle radiation apparatus according to the present invention, in the form of a SEM 100, is shown. The SEM 100 has a beam generator 1, an extraction electrode 2, a control electrode 3, and an anode 4, the beam generator having an electron source. The anode 4 constitutes the source-side end of the beam guide tube 21 of the SEM 100. The beam generator 1 is designed, for example, as a thermal field emitter. Alternatively, the beam generator 1 is designed, for example, as a thermal tungsten emitter or a lanthanum hexaboride (LAB6) emitter.

[0081] Electrons emitted from beam generator 1 form a primary electron beam. The electrons are accelerated to the anode potential due to the potential difference between beam generator 1 and anode 4. The potential of anode 4 is, for example, positive 1 kV to 30 kV compared to the potential of beam generator 1, thus the electrons possess kinetic energy in the range of 1 keV to 30 keV.

[0082] Looking from the anode 4 toward the objective lens 10, the SEM 100, along the optical axis 20, first has a first converging lens 5, and then a second converging lens 6. Between the first converging lens 5 and the second converging lens 6, a baffle unit 7 is arranged in the beam guide tube 21. Figure 1 In the SEM 100 shown, the objective lens 10 is designed as a magnetic lens and has pole shoes 22 with pole shoe gaps 23. A ring coil 11 for generating the magnetic field of the objective lens 10 is arranged in the pole shoes 22.

[0083] Looking from the second converging lens 6 toward the objective lens 10, a deflection device is arranged along the optical axis 20 of the SEM 100. This deflection device has a first deflection unit 9 and a second deflection unit 12. The first deflection unit 9 is arranged on the source side of the objective lens 10. In contrast, the second deflection unit 12 is arranged on the object side within the objective lens 10, located on the beam guide tube 21. The first deflection unit 9 and the second deflection unit 12 are intersecting beam deflection units. In other words, both the first deflection unit 9 and the second deflection unit 12 are designed to deflect the primary electron beam in two non-parallel directions, which are oriented perpendicular to the optical axis 20. For example, the first deflection unit 9 and / or the second deflection unit 12 are designed as magnetic deflection units. In particular, the first deflection unit 9 and / or the second deflection unit 12 each have, for example, four hollow coils arranged around the optical axis 20 of the SEM 100. However, the present invention is not limited to the aforementioned number of hollow coils. Instead, any number of hollow coils suitable for the present invention can be used. Addendum or alternatively, the first deflection unit 9 and / or the second deflection unit 12 are designed as electrostatic deflection units. In particular, the first deflection unit 9 and / or the second deflection unit 12 each respectively have, for example, four electrodes arranged around the optical axis 20 of the SEM 100, which can be applied with different electrostatic potentials. However, the present invention is not limited to the aforementioned number of electrodes. Instead, any number of electrodes suitable for the present invention can be used.

[0084] Objective lens 10 is positioned in sample chamber 13. Specifically, objective lens 10 protrudes into the interior space of sample chamber 13 through an opening in sample chamber 13. A movable stage 19 is arranged within the interior space of sample chamber 13. Object 15 can be positioned on stage 19.

[0085] Using objective lens 10, a primary electron beam generated by beam generator 1 and shaped by first converging lens 5 and / or second converging lens 6 is focused into object plane 16. Appropriate excitation of first deflection unit 9 and second deflection unit 12 ensures that the primary electron beam can be deflected in object plane 16 perpendicular to the optical axis 20 of SEM 100, allowing scanning of the surface of object 15 arranged in object plane 16 by different deflections of the primary electron beam. Here, electrons from the primary electron beam interact with object 15. As a result of the interaction, electrons are emitted from object 15 (so-called secondary electrons) and electrons from the primary electron beam are reflected back (so-called backscattered electrons). Secondary electrons and backscattered electrons are detected and used to generate an image. An image of the object 15 under study is thus obtained. Furthermore, interaction radiation, such as X-ray radiation and / or cathodoluminescence, is generated during the interaction for analysis of object 15 and subsequently evaluated.

[0086] To detect the aforementioned interacting particles and / or the aforementioned interacting radiation, a first detector unit 14 is arranged, for example, in the sample chamber 13. Alternatively or supplemented here, for example, a second detector unit 8 for detecting the aforementioned interacting particles is arranged in the region between the first deflection unit 9 and the second converging lens 6 in the beam guide tube 21.

[0087] exist Figure 1 In the illustrated embodiment of the SEM 100, a pressure grading plate holder 17 is provided, which can be positioned at the pole piece 22 of the objective lens 10, protruding into the sample chamber 13. The pressure grading plate holder 17 has a pressure grading plate with a baffle opening 18. For example, an additional pressure grading plate can be arranged within the beam guide tube 21 of the SEM 100. This is... Figure 1 Not shown in [the document / image / etc.]. Figure 1 The vacuum pumps are not shown either, which are required to generate and maintain the vacuum needed to operate the SEM 100 within the beam guide tube 21 and sample chamber 13.

[0088] If the SEM 100 is to be operated under high vacuum conditions in sample chamber 13, the pressure grading plate holder 17 is not absolutely necessary and can therefore be removed from the pole shoe 22 of objective lens 10. In contrast, if the SEM 100 is to be operated under relatively high pressure (approximately 1 Pa to 3000 Pa) in sample chamber 13, the pressure grading plate holder 17 should be mounted at the pole shoe 22 of objective lens 10, thereby maintaining a sufficiently good vacuum within the beam guide tube 21 by differential pumping despite the higher pressure in sample chamber 13. With the pressure grading plate holder 17 mounted, the edge of the baffle opening 18 within the pressure grading plate holder 17 causes cropping of the image field that can be scanned in object plane 16.

[0089] Specifically, the first detector unit 14, the second detector unit 8, the first deflection unit 9, and the second deflection unit 12 are connected to a control device 123, which has a monitor 124. The control device 123 processes detection signals generated by the first detector unit 14 and the second detector unit 8 and displays them as images on the monitor 124. The control device 123 also has a database 126, in which data is stored and read. Furthermore, the control device 123 is connected to other units of the SEM 100. This is in Figure 1 This was not further shown in the text.

[0090] The control device 123 of the SEM 100 includes a processor 127. A computer program product with program code is loaded in the processor 127, which, when executed, implements methods for operating the SEM 100. This will be described in more detail below.

[0091] In SEM 100, distance A can be set using the control device 123 of SEM 100. Distance A is given by (a) the object distance between the outer boundary of the objective lens 10 of SEM 100 and the object 15, or (b) the focal plane distance between the outer boundary of the objective lens 10 of SEM 100 and the focal plane of the objective lens 10. The focal plane is located, for example, in the object plane 16. The distance A described above, depending on case (a) or case (b), is also referred to as the working distance. For example, in case (a), distance A is set by moving the stage 19 and / or by moving the objective lens 10 using the moving device 25. In particular, in case (b), distance A is set by varying the excitation of the objective lens 10 along the optical axis 20 of SEM 100.

[0092] Figure 2 A schematic diagram of another SEM 100 is shown. This other SEM 100 has a first beam generator, which is in the form of an electron source 101 designed as a cathode. Furthermore, this other SEM 100 includes an extraction electrode 102 and an anode 103, which is inserted into one end of a beam guide tube 104 of the other SEM 100. For example, the electron source 101 is designed as a thermal field emitter. However, the invention is not limited to this electron source 101. Rather, any electron source suitable for the invention can be used.

[0093] Electrons emitted from electron source 101 form a primary electron beam. The electrons are accelerated to the anode potential due to the potential difference between electron source 101 and anode 103. In the embodiment shown here, the anode potential relative to the ground potential of the sample chamber 120 housing is 100 V to 35 kV, for example 5 kV to 15 kV, particularly 8 kV. However, alternatively, the anode potential may also be at the ground potential.

[0094] Two converging lenses, namely a first converging lens 105 and a second converging lens 106, are arranged at the beam guide tube 104. Here, viewed from the electron source 101 towards the first objective lens 107, the first converging lens 105 is arranged first, followed by the second converging lens 106. It should be clearly noted that another embodiment of the SEM 100 may have only a single converging lens. A first baffle unit 108 is arranged between the anode 103 and the first converging lens 105. The first baffle unit 108, together with the anode 103 and the beam guide tube 104, is at a high voltage potential (i.e., the potential of the anode 103) or grounded. The first baffle unit 108 has a plurality of first baffle openings 108A, in... Figure 2 The diagram shows one of the plurality of first baffle openings. For example, there are two first baffle openings 108A. Each of the plurality of first baffle openings 108A has a different opening diameter. The desired first baffle opening 108A can be set onto the optical axis OA of another SEM 100 by means of an adjustment mechanism (not shown). It should be clearly noted that in other embodiments, the first baffle unit 108 may have only one single first baffle opening 108A. In this embodiment, the adjustment mechanism may not be provided. The first baffle unit 108 is then designed to be fixed in position. A fixed second baffle unit 109 is arranged between the first converging lens 105 and the second converging lens 106. Alternatively, the second baffle unit 109 may be designed to be movable.

[0095] The first objective lens 107 has pole shoes 110, in which holes are designed. A beam guide tube 104 is guided through these holes. A coil 111 is arranged in the pole shoes 110.

[0096] An electrostatic deceleration device is arranged in the lower region of the beam guide tube 104. This deceleration device has a separate electrode 112 and a tubular electrode 113. The tubular electrode 113 is arranged on the end of the beam guide tube 104 facing the object 125, which is arranged on an object holder 114 designed to be movable.

[0097] The tubular electrode 113, together with the beam guide tube 104, is at the potential of the anode 103, while the individual electrode 112 and the object 125 are at a lower potential relative to the anode 103. In this case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be slowed down to the desired energy required to study the object 125.

[0098] The object 125 and the individual electrode 112 can also be at different potentials and different from ground. This allows the deceleration position of the primary electron beam relative to the object 125 to be set. If deceleration is performed, for example, at a position quite close to the object 125, the imaging error is smaller.

[0099] Another SEM 100 also has a deflection device having a first deflection unit 130 and a second deflection unit 115. The first deflection unit 130 is arranged on the source side within the first objective lens 107. In contrast, the second deflection unit 115 is arranged on the object side within the first objective lens 107, located on the beam guide tube 104. The first deflection unit 130 and the second deflection unit 115 are interleaved beam deflection units. In other words, both the first deflection unit 130 and the second deflection unit 115 are designed to deflect the primary electron beam in two non-parallel directions perpendicular to the optical axis OA of the other SEM 100. For example, the first deflection unit 130 and / or the second deflection unit 115 are designed as magnetic deflection units. In particular, the first deflection unit 130 and / or the second deflection unit 115 each correspondingly have, for example, four hollow coils arranged around the optical axis OA of the other SEM 100. However, the invention is not limited to the aforementioned number of hollow coils. Instead, any number of hollow coils suitable for the present invention can be used. Addendum or alternatively, the first deflection unit 130 and / or the second deflection unit 115 are designed as electrostatic deflection units. Furthermore, the first deflection unit 130 and the second deflection unit 115 are arranged within the beam guide tube 104. In particular, the first deflection unit 130 and / or the second deflection unit 115 each have, for example, four electrodes arranged around the optical axis OA of the SEM 100, which can be applied with different electrostatic potentials. However, the present invention is not limited to the aforementioned number of electrodes. Instead, any number of electrodes suitable for the present invention can be used. The primary electron beam is deflected by the first deflection unit 130 and the second deflection unit 115, and is able to sweep (or scan) across the object 125. Here, the electrons of the primary electron beam interact with the object 125. As a result of the interaction, interacting particles are detected. These interacting particles are, in particular, electrons emitted from the surface of the object 125 (so-called secondary electrons) or electrons from the primary electron beam that are returned and scattered (so-called return scattered electrons).

[0100] To detect secondary electrons and / or returned scattered electrons, a detector assembly is arranged in the beam guide tube 104, comprising a first detector 116 and a second detector 117. The first detector 116 is arranged along the optical axis OA on the source side, while the second detector 117 is arranged along the optical axis OA on the object side in the beam guide tube 104. The first detector 116 and the second detector 117 are staggered from each other in the direction of the optical axis OA of the SEM 100. Both the first detector 116 and the second detector 117 have through-openings through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potentials of the anode 103 and the beam guide tube 104. The optical axis OA of the SEM 100 extends through the corresponding through-openings.

[0101] The second detector 117 is primarily used to detect secondary electrons. Secondary electrons initially possess relatively low kinetic energy and arbitrary direction of motion upon exiting object 125. Through a strong suction field emanating from tubular electrode 113, the secondary electrons are accelerated in the direction toward the first objective lens 107. The secondary electrons enter the first objective lens 107 approximately parallel to each other. The beam diameter of the secondary electron beam also remains relatively small within the first objective lens 107. The first objective lens 107 now strongly acts on the secondary electrons and produces a relatively short focusing beam with a sufficiently steep angle relative to the optical axis OA, causing the secondary electrons to disperse after focusing and strike the second detector within its effective area. Conversely, only a small fraction of the electrons that are backscattered at object 125 (i.e., those with relatively high kinetic energy relative to the secondary electrons upon exiting object 125) are recorded by the second detector 117. The high kinetic energy of the return-scattered electrons as they leave object 125 and their angle relative to the optical axis OA result in the beam waist (i.e., the region with the smallest diameter) of the return-scattered electrons being located near the second detector 117. Most of the return-scattered electrons pass through the through-hole of the second detector 117. The first detector 116 is therefore primarily used to record the return-scattered electrons.

[0102] In another embodiment of the SEM 100, the first detector 116 may also be designed to have a reverse field grid 116A. The reverse field grid 116A is arranged on one side of the first detector 116 facing the object 125. The reverse field grid 116A has a negative potential relative to the beam guide tube 104, such that only high-energy return-scattered electrons pass through the reverse field grid 116A to reach the first detector 116. Additionally or alternatively, the second detector 117 has another reverse field grid designed similarly to the aforementioned reverse field grid 116A of the first detector 116 and has similar functionality.

[0103] Additionally, another SEM 100 has a sample chamber detector 119 in the sample chamber 120, such as an Everhart-Thornley detector or an ion detector with a light-shielding detection surface coated with metal.

[0104] The detection signals generated by the first detector 116, the second detector 117, and the sample chamber detector 119 are used to generate one or more images of the surface of the object 125.

[0105] It is explicitly stated that the baffle openings of the first baffle unit 108 and the second baffle unit 109, as well as the through openings of the first detector 116 and the second detector 117, are shown in exaggerated proportions. The through openings of the first detector 116 and the second detector 117 have an extension dimension perpendicular to the optical axis OA in the range of 0.5 mm to 5 mm. For example, they are designed to be circular and have a diameter perpendicular to the optical axis OA in the range of 1 mm to 3 mm.

[0106] In the embodiment shown here, the second baffle unit 109 is configured as an orifice plate and provided with a second baffle opening 118 for allowing the primary electron beam to pass through. This second baffle opening has an extension dimension in the range of 5 µm to 500 µm, for example, 35 µm. Alternatively, in another embodiment, the second baffle unit 109 is provided with a plurality of baffle openings that can be mechanically deflected toward the primary electron beam or, in the case of the use of electrical and / or magnetic deflection elements, allow the primary electron beam to reach these baffle openings. The second baffle unit 109 is designed as a pressure grading plate. This pressure grading plate will be equipped with an electron source 101 and will be dominated by ultra-high vacuum (10...). -7 hPa to 10 -12 The first region (hPa) and the region with high vacuum (10) -3 hPa to 10 -7 The second region (hPa) is separated from the middle pressure region of the guide sample chamber 120 of the beam guide tube 104.

[0107] Sample chamber 120 is under vacuum. A pump (not shown) is installed in sample chamber 120 to create this vacuum. Figure 2 In the embodiment shown, the sample chamber 120 operates within a first pressure range or a second pressure range. The first pressure range includes only pressures less than or equal to 10. -3 The pressure range is hPa, while the second pressure range only includes pressures greater than 10. -3 The pressure is hPa. To ensure these pressure ranges, sample chamber 120 is sealed in terms of vacuum technology.

[0108] An object holder 114 is arranged on a stage 122. The stage 122 is configured to be movable in three mutually perpendicular directions: the x-direction (first stage axis), the y-direction (second stage axis), and the z-direction (third stage axis). Furthermore, the stage 122 can rotate about two mutually perpendicular rotation axes (stage rotation axes). The invention is not limited to the stage 122 described above. Instead, the stage 122 can have additional translational and rotational axes, and the stage 122 can move along or about these translational axes.

[0109] Another SEM 100 also features a third detector 121 arranged within the sample chamber 120. Specifically, the third detector 121 is positioned behind the stage 122 along the optical axis OA as viewed from the electron source 101. The stage 122, and therefore the object holder 114, can be rotated such that the object 125 disposed on the object holder 114 can be transmitted through the primary electron beam. As the primary electron beam passes through the object 125 under study, the electrons of the primary electron beam interact with the material of the object 125. The electrons passing through the object 125 are detected by the third detector 121.

[0110] A radiation detector 500 is arranged in the sample chamber 120 to detect the interaction radiation, such as X-ray radiation and / or cathodoluminescence, generated when a primary electron beam strikes an object 125. The radiation detector 500, a first detector 116, a second detector 117, and a sample chamber detector 119 are connected to a control device 123, which has a monitor 124. A third detector 121 is also connected to the control device 123. For clarity, it is not illustrated. The control device 123 processes the detection signals generated by the first detector 116, the second detector 117, the sample chamber detector 119, the third detector 121, and / or the radiation detector 500, and displays these detection signals as images on the monitor 124.

[0111] The control device 123 also has a database 126 in which data is stored and read. Furthermore, the control device 123 is connected to deflection devices in the form of a first deflection unit 130 and a second deflection unit 115. Additionally, the control device 123 is connected to other units of another SEM 100. For clarity, these are not shown in detail.

[0112] The control device 123 of the other SEM 100 has a processor 127. A computer program product with program code is loaded in the processor 127, which, when executed, implements methods for operating the other SEM 100. This will be described in more detail below.

[0113] In another SEM 100, distance A can be set using the control device 123 of the other SEM 100. Distance A is given by (a) the object distance between the outer boundary of the first objective lens 107 of the other SEM 100 and the object 125, or (b) the focal plane distance between the outer boundary of the first objective lens 107 of the other SEM 100 and the focal plane of the first objective lens 107. The distance A described above, depending on case (a) or case (b), is also referred to as the working distance. For example, in case (a), distance A is set by moving the stage 122 and / or by moving the first objective lens 107 using the moving device 25. For example, in case (b), distance A is set by varying the excitation of the first objective lens 107 along the optical axis OA of the other SEM 100.

[0114] Figure 3 A particle radiation device in the form of a combined device 200 is shown. The combined device 200 has two particle radiation columns. On one hand, the combined device 200 is provided with, as in... Figure 2 Another SEM 100 has already been shown, but sample chamber 120 is not included. More precisely, the other SEM 100 is located in sample chamber 201. Sample chamber 201 is under vacuum. To create this vacuum, a pump (not shown) is located in sample chamber 201. Figure 3 In the embodiment shown, the sample chamber 201 operates within a first pressure range or a second pressure range. The first pressure range includes only pressures less than or equal to 10. -3 The pressure range is hPa, while the second pressure range only includes pressures greater than 10. -3 The pressure is hPa. To ensure these pressure ranges, sample chamber 201 is sealed in terms of vacuum technology.

[0115] A sample chamber detector 119 is arranged in the sample chamber 201. This sample chamber detector is designed, for example, an Everhart-Thornley detector or an ion detector, and has a light-shielding detection surface coated with metal. In addition, a third detector 121 is arranged in the sample chamber 201.

[0116] Another SEM 100 is used to generate the first particle beam, namely the primary electron beam already described above, and has the optical axis already mentioned above, which is in Figure 3 Reference numeral 709 is provided in the accompanying drawing and is referred to hereinafter as the first beam axis. Additionally, the combined apparatus 200 includes an ionization radiation device 300, which is also arranged in the sample chamber 201. The ionization radiation device 300 also has an optical axis, which is located at... Figure 3 The figure is marked with reference numeral 710 and is referred to hereinafter as the second beam axis.

[0117] Another SEM 100 is arranged vertically relative to sample chamber 201. Conversely, the ionization radiation device 300 is arranged at an angle of approximately 0° to 90° relative to SEM 100. Figure 3 For example, an arrangement of approximately 50° is shown. The ion radiation device 300 has a second beam generator in the form of an ion beam generator 301. Ions are generated by the ion beam generator 301, which constitute a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302 at a pre-given potential. The second particle beam then passes through the ion optics of the ion radiation device 300, wherein the ion optics have a converging lens 303 and a second objective lens 304. The second objective lens 304 ultimately produces an ion probe, which is focused onto an object 125 arranged at an object holder 114. The object holder 114 is arranged on a stage 122.

[0118] Above the second objective lens 304 (i.e., towards the ion beam generator 301), a settable or selectable baffle 306 and a deflection device are arranged. The deflection device has a first deflection unit 307 and a second deflection unit 308. The first deflection unit 307 is arranged on the source side within the second objective lens 304. In contrast, the second deflection unit 308 is arranged on the object side within the second objective lens 304. The first deflection unit 307 and the second deflection unit 308 are intersecting beam deflection units. In other words, both the first deflection unit 307 and the second deflection unit 308 are designed to deflect the ion beam in two non-parallel directions perpendicular to the optical axis, which is in the form of the second beam axis 710 of the ion radiation device 300. For example, the first deflection unit 307 and / or the second deflection unit 308 are designed as magnetic deflection units. In particular, the first deflection unit 307 and / or the second deflection unit 308 each have, for example, four hollow coils arranged around an optical axis in the form of a second beam axis 710 of the ionizing radiation device 300. However, the invention is not limited to the aforementioned number of hollow coils. Rather, any number of hollow coils suitable for the invention can be used. Addendum or alternatively, the first deflection unit 307 and / or the second deflection unit 308 are designed as electrostatic deflection units. In particular, the first deflection unit 307 and / or the second deflection unit 308 each have, for example, four electrodes arranged around an optical axis in the form of a second beam axis 710 of the ionizing radiation device 300, these electrodes being able to be applied with different electrostatic potentials. However, the invention is not limited to the aforementioned number of electrodes. Rather, any number of electrodes suitable for the invention can be used. The ion beam is deflected by the first deflection unit 307 and the second deflection unit 308, and is able to sweep (or scan) across the object 125.

[0119] As described above, an object holder 114 is arranged on the stage 122. Figure 3 In the illustrated embodiment, the stage 122 is also configured to be movable in three mutually perpendicular directions, namely, in the x-direction (first stage axis), y-direction (second stage axis), and z-direction (third stage axis). Furthermore, the stage 122 can rotate about two mutually perpendicular rotation axes (stage rotation axes).

[0120] exist Figure 3 The distances between the various units of the combined device 200 shown are exaggerated in order to better illustrate the various units of the combined device 200.

[0121] A radiation detector 500 is installed in sample chamber 201 to detect interacting radiation, such as X-ray radiation and / or cathodoluminescence. The radiation detector 500 is connected to a control device 123, which has a monitor 124.

[0122] Control device 123 processes data from the first detector 116 (in...) Figure 3 (not shown in the image), second detector 117 (in...) Figure 3 The detection signals generated by the sample chamber detector 119, the third detector 121 and / or the radiation detector 500 (not shown in the image) are displayed as images on the monitor 124.

[0123] The control device 123 also has a database 126 in which data is stored and data is read from. Furthermore, the control device 123 is connected to a first deflection unit 130 (in which the primary electron beam of another SEM 100 is deflected) Figure 3 (not shown in the image) and the second deflection unit 115 (in the image) Figure 3 It is connected to a deflection device in the form of a first deflection unit 307 and a second deflection unit 308 for use with an ion beam in an ion radiation device 300.

[0124] The control unit 123 of the combined device 200 includes a processor 127. A computer program product with program code is loaded in the processor 127, which, when executed, implements methods for operating the combined device 200. This will be described in more detail below.

[0125] The working distance can also be set in the combined device 200. For example, in another SEM 100, the distance A1 can be set using the control device 123. The distance A1 is given by (a) the object distance between the outer boundary of the first objective lens 107 of the other SEM 100 and the object 125 or (b) the focal plane distance between the outer boundary of the first objective lens 107 of the other SEM 100 and the focal plane of the first objective lens 107. The distance A1 described above, depending on case (a) or case (b), is also referred to as the working distance. For example, in case (a), the distance A1 is set by moving the stage 122 and / or by moving the first objective lens 107 using the moving device 25. For example, in case (b), the distance A1 is set by varying the excitation of the first objective lens 107 along the first beam axis 709 of the other SEM 100. Furthermore, the distance A2 can be set using the control device 123. Distance A2 is given by (a) the object distance between the outer boundary of the second objective lens 304 of the ion radiation device 300 and the object 125, or (b) the focal plane distance between the outer boundary of the second objective lens 304 of the ion radiation device 300 and the focal plane of the second objective lens 304. Distance A2, depending on case (a) or (b), is also referred to as the working distance. For example, in case (a), distance A2 is set by moving the stage 122 and / or by moving the second objective lens 304 via the moving device 25. For example, in case (b), distance A2 is set by varying the excitation of the second objective lens 304 along the second beam axis 710 of the ion radiation device 300.

[0126] The following will elaborate on the basis Figure 2 Another SEM 100 and according to Figure 3 The combined device 200 includes a stage 122. The stage 122 is designed as a movable stage, which... Figure 4 and Figure 5 The diagram is shown schematically. According to... Figure 1 The stage 19 of the SEM 100 is applicable to the following situations.

[0127] It should be noted that the present invention is not limited to the stage 122 described herein. Rather, the present invention can have any movable stage suitable for the present invention.

[0128] An object holder 114 is arranged at the stage 122. The stage 122 has moving elements that ensure the movement of the stage 122, allowing regions of interest on the object 125 to be studied, for example, by means of a particle beam. Figure 4 and Figure 5 The moving element is illustrated in the diagram and will be explained below.

[0129] The stage 122 has a first moving element 600, which is arranged, for example, at the housing 601 of the sample chamber 120 or 201 (in which the stage 122 is further arranged). The first moving element 600 allows the stage 122 to move along the z-axis (the axis of the third stage). Furthermore, a second moving element 602 is provided. The second moving element 602 allows the stage 122 to rotate about the first stage rotation axis 603 (also referred to as the tilt axis). The second moving element 602 is used to tilt the object 125 about the first stage rotation axis 603, wherein the object 125 is arranged at the object holder 114.

[0130] A third moving element 604 is further arranged on the second moving element 602. This third moving element is designed as a guide for the slider and ensures that the stage 122 can move in the x-direction (the axis of the first stage). The aforementioned slider is further a fourth moving element, namely a fourth moving element 605. The fourth moving element 605 is designed to allow the stage 122 to move in the y-direction (the axis of the second stage). For this purpose, the fourth moving element 605 has a guide that guides another slider, on which an object holder 114 is further arranged. The object holder 114 is further designed to have a fifth moving element 606, which enables the object holder 114 to rotate about the rotation axis 607 of the second stage. The rotation axis 607 of the second stage is oriented perpendicular to the rotation axis 603 of the first stage.

[0131] Based on the above arrangement, the stage 122 of the embodiment discussed herein has the following kinematic chain: first moving element 600 (moving along the z-axis) - second moving element 602 (rotating about the first stage rotation axis 603) - third moving element 604 (moving along the x-axis) - fourth moving element 605 (moving along the y-axis) - fifth moving element 606 (rotating about the second stage rotation axis 607).

[0132] In another (not shown) embodiment, additional moving elements are arranged at the stage 122, enabling movement along additional translation axes and / or about additional rotation axes.

[0133] As from Figure 5As can be seen, each of the aforementioned moving elements is connected to a drive unit in the form of motors M1 to M5. Therefore, the first moving element 600 is connected to the first drive unit M1 and is driven by the driving force provided by the first drive unit M1. The second moving element 602 is connected to the second drive unit M2, which drives the second moving element 602. The third moving element 604 is further connected to the third drive unit M3. The third drive unit M3 provides driving force to drive the third moving element 604. The fourth moving element 605 is connected to the fourth drive unit M4, which drives the fourth moving element 605. Furthermore, the fifth moving element 606 is connected to the fifth drive unit M5. The fifth drive unit M5 provides driving force to drive the fifth moving element 606.

[0134] The aforementioned drive units M1 to M5 can, for example, be designed as stepper motors and controlled by the drive control unit 608, which also supplies power to each other (see [reference]). Figure 5 It should be clearly stated that the present invention is not limited to movement achieved by a stepper motor. Rather, any drive unit suitable for the present invention can be used as a drive unit, such as a brushless motor or a piezoelectric actuator.

[0135] The following will address the issue based on Figure 1 The SEM 100 provides a more detailed explanation of the implementation of the method according to the invention. According to... Figure 2 Another SEM 100 and according to Figure 3 The combined equipment 200 is applicable to the following situations.

[0136] Figure 6 An embodiment of the method according to the present invention is shown, the method being implemented using... Figure 1 Implemented using SEM 100. Based on... Figure 6In an embodiment of the method according to the invention, distance A is determined in method step S1 using control device 123 of SEM 100. Distance A is given by (a) the object distance between the outer boundary of objective lens 10 of SEM 100 and object 15 or (b) the focal plane distance between the outer boundary of objective lens 10 of SEM 100 and focal plane of objective lens 10. The aforementioned distance according to case (a) or case (b) is also referred to as the working distance. For example, it is proposed to determine distance A according to case (a) (i.e., determine the working distance) by the relative movement of object 15 relative to objective lens 10 (e.g., by moving object 15 and / or by moving objective lens 10) and / or by determining the object distance. Determining the object distance includes, for example, measuring the object distance and / or reading the object distance at a measuring device. In another embodiment of the method according to the invention, it is additionally or alternatively proposed to determine distance A according to case (b) by manipulating objective lens 10 to position the focal plane of objective lens 10 and / or by determining the focal plane distance. Determining the focal plane distance includes, for example, measuring the focal plane distance and / or reading the focal plane distance at a measuring device. In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that the distance A (i.e., the working distance) be determined by at least one of the following method steps: (i) moving the stage 19 on which the object 15 is disposed along the optical axis 20 of the SEM 100; (ii) moving the stage 19 on which the object 15 is disposed relative to the optical axis 20 of the SEM 100, wherein the movement is not perpendicular to the optical axis 20; (iii) moving the objective lens 10 of the SEM 100 along the optical axis 20 of the SEM 100 using the moving device 25; and (iv) moving the objective lens 10 of the SEM 100 relative to the optical axis 20 using the moving device 25, wherein the movement is not perpendicular to the optical axis 20.

[0137] According to Figure 6According to an embodiment of the method of the present invention, in method step S2, a particle beam in the form of a primary electron beam is deflected to a position along the optical axis 20 of the SEM 100 by a deflection device in the form of a first deflection unit 9 and a second deflection unit 12, according to a determined distance A (i.e., a determined working distance). Therefore, the aforementioned position is associated with the determined distance A. In other words, the primary electron beam is guided to this position along the optical axis 20 of the SEM 100 by the first deflection unit 9 and the second deflection unit 12 according to the determined working distance A. This position of the primary electron beam along the optical axis 20 of the SEM 100 is, for example, the turning point of the primary electron beam as explained above. At this position along the optical axis 20 of the SEM 100, the center path of the primary electron beam has an axial distance perpendicular to the optical axis 20 of the SEM 100. The above-described embodiments referring to the definition of the center path also apply here. At the determined distance A (i.e. the determined working distance), the axial distance of the center path of the primary electron beam at this position along the optical axis 20 is less than all other axial distances of the center path of the primary electron beam perpendicular to the optical axis 20, wherein for the distance A determined according to case (a), the other axial distances are arranged between the center of the second deflection unit 12 and the object 15, and wherein for the distance A determined according to case (b), the other axial distances are arranged between the center of the second deflection unit 12 and the focal plane of the objective lens 10.

[0138] Figure 7 Another embodiment of the method according to the present invention is shown. Figure 7 The embodiments of the method according to the present invention are based on... Figure 6 The embodiments of the method according to the present invention. Therefore, the embodiments derived above also apply here. Figure 6 The implementation methods according to the present invention differ, depending on... Figure 7An embodiment of the method according to the present invention includes another method step, namely method step S1A, which is between method steps S1 and S2. In method step S1A, the position of the primary electron beam along the optical axis 20 associated with the determined distance A (i.e., the determined working distance) is loaded into the control device 123 from the database 126 of the SEM 100 and / or from another storage unit. Then, in method step S2, the primary electron beam is deflected using a deflection device in the form of a first deflection unit 9 and a second deflection unit 12, thereby guiding the primary electron beam to the loaded position. In other words, in this embodiment of the method according to the present invention, the relationship between the position of the inflection point and the working distance A is stored in the database 126 and / or the storage unit. If the working distance A is determined, the associated position can be loaded from the database 126 and / or the storage unit. The primary electron beam is guided to this position by the deflection device in the form of the first deflection unit 9 and the second deflection unit 12.

[0139] Figure 8 Another embodiment of the method according to the present invention is shown. Figure 8 The embodiments of the method according to the present invention are based on... Figure 6 The embodiments of the method according to the present invention. Therefore, the embodiments derived above also apply here. Figure 6 The implementation methods according to the present invention differ, depending on... Figure 8 An embodiment of the method according to the present invention includes another method step, namely method step S1B, between method steps S1 and S2. In method step S1B, it is proposed that the position of the primary electron beam along the optical axis 20 of the SEM 100 associated with a determined distance A (i.e., a determined working distance) is calculated using the control device 123. The above-described embodiment, to which the calculation is referred, also applies here. Then, in method step S2, the primary electron beam is deflected using a deflection device in the form of a first deflection unit 9 and a second deflection unit 12, thereby guiding the primary electron beam to the calculated position. Addendum to or alternatively to this, the position P associated with distance A is stored in the database 126 and / or storage unit.

[0140] Figure 9 Another embodiment of the method according to the present invention is shown. Figure 9 The embodiments of the method according to the present invention are based on... Figure 6 The embodiments of the method according to the present invention. Therefore, the embodiments derived above also apply here. Figure 6Different embodiments of the method according to the present invention may be performed sequentially, with method steps S1 and S2 executed multiple times. For example, method step S1 may be performed first, followed by method step S2, then method step S1 again, and then method step S2 again. This results in multiple determinations of distance A and multiple deflections of the primary electron beam to a position associated with the corresponding determined distance A. In this embodiment of the method according to the present invention, it is additionally or alternatively proposed that when the determined distance A (i.e., the determined working distance A) changes, the associated position of the primary electron beam along the optical axis 20 of the SEM 100 also changes. Therefore, in this embodiment of the method according to the present invention, the determined distance A is a first distance, the associated position of the primary electron beam along the optical axis 20 is a first associated position, the object distance is a first object distance, the focal plane distance is a first focal plane distance, and the axial distance of the center path of the primary electron beam at the first associated position is a first axial distance. When repeating method step S1, a second distance is determined using the control device 123 of the SEM 100. However, the second distance A is greater than the first distance A. The second distance A is given by (c) the second object distance between the outer boundary of the objective lens 10 of the SEM 100 and the object 15, or (d) the second focal plane distance between the outer boundary of the objective lens 10 of the SEM 100 and the focal plane of the objective lens 10. For example, it is proposed that the second distance A (i.e., the second working distance A) according to case (a) be determined by the relative movement of the object 15 relative to the objective lens 10 and / or by determining the object distance. Determining the object distance includes, for example, measuring the object distance and / or reading the object distance at a measuring device. In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that the second distance A according to case (b) be determined by manipulating the objective lens 10 to position the focal plane of the objective lens 10 and / or by determining the focal plane distance. Determining the focal plane distance includes, for example, measuring the focal plane distance and / or reading the focal plane distance at a measuring device. In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed that the second distance A be determined by at least one of the following method steps: (i) moving the stage 19 on which the object 15 is disposed along the optical axis 20 of the SEM 100; (ii) moving the stage 19 on which the object 15 is disposed relative to the optical axis 20 of the SEM 100, wherein the movement is not perpendicular to the optical axis 20; (iii) moving the objective lens 10 of the SEM 100 along the optical axis 20 of the SEM 100 using the moving device 25; and (iv) moving the objective lens 10 of the SEM 100 relative to the optical axis 20 using the moving device 25, wherein the movement is not perpendicular to the optical axis 20. Figure 9According to an embodiment of the method of the present invention, when repeating step S2, a deflection device in the form of a first deflection unit 9 and a second deflection unit 12 deflects the primary electron beam to a second position along the optical axis 20 of the SEM 100 according to a determined second distance A (i.e., a determined second working distance A). Therefore, the aforementioned second position is associated with the determined second distance A. In other words, the primary electron beam is guided to this second position along the optical axis 20 of the SEM 100 by the first deflection unit 9 and the second deflection unit 12 according to the determined second working distance A. This second position of the primary electron beam along the optical axis 20 of the SEM 100 is, for example, the turning point of the primary electron beam as explained above. At this second position along the optical axis 20 of the SEM 100, the center path of the primary electron beam has an axial distance perpendicular to the optical axis 20 of the SEM 100. In the case of the determined second distance A (i.e., the determined second working distance), the axial distance of the center path of the primary electron beam at this second position along the optical axis 20 is less than all other axial distances of the center path of the primary electron beam perpendicular to the optical axis 20, wherein for the second distance A determined according to case (a), the other axial distances are arranged between the center of the second deflection unit 12 and the object 15, and wherein for the second distance A determined according to case (b), the other axial distances are arranged between the center of the second deflection unit 12 and the focal plane. The distance between the second position and the outer boundary of the objective lens 10 is less than the distance between the first position and the outer boundary of the objective lens 10. In other words, as the working distance increases, the distance between the associated position of the primary electron beam and the outer boundary of the objective lens 10 decreases.

[0141] Figure 10 Another embodiment of the method according to the present invention is shown. Figure 10 The embodiments of the method according to the present invention are based on... Figure 6 The embodiments of the method according to the present invention. Therefore, the embodiments derived above also apply here. Figure 6 The implementation methods according to the present invention differ, in accordance with Figure 10 In an embodiment of the method according to the invention, method step S1C is performed, for example, after method step S1. In method step S1C, the landing energy of the electrons in the primary electron beam that strike the object 15 is determined using control device 123. In other words, the landing energy is set and / or determined. For example, determining the landing energy includes measuring the landing energy and / or reading the landing energy from a landing energy measuring device. Figure 6 The implementation methods according to the present invention differ, in accordance with Figure 10In the embodiments of the method according to the present invention, method step S2A is performed instead of method step S2. Method step S2A first includes method step S2, and therefore all embodiments described above are applicable here as well. Additionally, in method step S2A, the primary electron beam is deflected according to the landing energy by deflection devices in the form of a first deflection unit 9 and a second deflection unit 12. This deflects the primary electron beam to a position associated with both the determined distance A and the determined landing energy. In other words, the position of the primary electron beam along the optical axis 20 of the SEM 100 depends on both the determined distance A and the determined landing energy. For example, it is proposed that the position associated with the determined distance A and dependent on the landing energy be loaded into the control device from the database 126 and / or storage unit 123. These embodiments are also applicable here, referring to the embodiments derived above.

[0142] In another embodiment of the method according to the invention, it is additionally or alternatively proposed that the position of the primary electron beam along the optical axis 20 of the SEM 100 associated with the determined distance A when the energy is below a threshold landing energy is such that the position is spaced smaller from the outer boundary of the objective lens 10 compared to (i) the position of the primary electron beam along the optical axis 20 of the SEM 100 when the energy exceeds the threshold landing energy or (ii) when the landing energy corresponds to the threshold landing energy.

[0143] In order to set the landing energy, the control device 123 may have an acceleration device and / or a deceleration device and / or be connected to the acceleration device and / or deceleration device.

[0144] In yet another embodiment of the method according to the invention, it is additionally or alternatively proposed to reduce imaging errors in the resulting image. To this end, in this embodiment of the method according to the invention, the first deflection unit 9 and the second deflection unit 12 of the SEM 100 are manipulated according to the landing energy and / or a determined distance A to cause the primary electron beam to sweep across the object 15, thereby reducing and / or eliminating display errors of the object 15. At the same determined distance, the lower the landing energy, the more nonlinear the way the first deflection unit 9 and the second deflection unit 12 are excited. If the linear portion of each excitation remains constant, then at the same landing energy, the larger the determined distance A, the larger the nonlinear portion of the excitation of the first deflection unit 9 and the second deflection unit 12. The above-described embodiments with reference to nonlinear excitation also apply here.

[0145] The above-described embodiments of the method according to the present invention ensure that a sufficiently large image field of the SEM 100 can always be achieved regardless of different determined distances (i.e., different determined working distances). In other words, by selecting the aforementioned position (i.e., the turning point of the primary electron beam) along the optical axis 20 according to the determined distance (i.e., the determined working distance A), the desired image field of the SEM 100 can be achieved. The method according to the present invention can be performed manually and / or automatically.

[0146] Figure 11 Another embodiment of the method according to the present invention is shown, the method being used according to Figure 1 The method is implemented using SEM 100. This embodiment of the method according to the invention includes method step S20. In method step S20, the landing energy of the electrons of the primary electron beam hitting the object 15 is determined using control device 123. In other words, the landing energy is set and / or determined. To set the landing energy, control device 123 may have an acceleration device and / or a deceleration device and / or be connected to an acceleration device and / or a deceleration device. For example, determining the landing energy includes measuring the landing energy and / or reading the landing energy from a landing energy measuring device.

[0147] According to Figure 11 According to an embodiment of the method of the present invention, in method step S21, a particle beam in the form of a primary electron beam is deflected to a position along the optical axis 20 of the SEM 100 by a deflection device in the form of a first deflection unit 9 and a second deflection unit 12, based on a determined landing energy. Therefore, this position is associated with the determined landing energy. In other words, the primary electron beam is guided to this position along the optical axis 20 of the SEM 100 by the first deflection unit 9 and the second deflection unit 12, based on the determined landing energy. This position of the primary electron beam along the optical axis 20 of the SEM 100 is, for example, the turning point of the primary electron beam as explained above. At this position along the optical axis 20 of the SEM 100, the center path of the primary electron beam has an axial distance perpendicular to the optical axis 20 of the SEM 100. The above-described embodiments for defining the center path also apply here. Given the determined landing energy, the axial distance of the center path of the primary electron beam at a position along the optical axis 20 is less than all other axial distances of the center path of the primary electron beam perpendicular to the optical axis 20, wherein the other axial distances are arranged between the center of the second deflection unit 12 and the object 15, or between the center of the second deflection unit 12 and the focal plane.

[0148] Figure 12 Another embodiment of the method according to the present invention is shown. Figure 12 The embodiments of the method according to the present invention are based on... Figure 11The embodiments of the method according to the present invention. Therefore, the embodiments derived above also apply here. Figure 11 The implementation methods according to the present invention differ, depending on... Figure 12 An embodiment of the method according to the present invention includes another method step, namely method step S20A, which is located between method steps S20 and S21. In method step S20A, the position of the primary electron beam along the optical axis 20 associated with the determined landing energy is loaded into the control device 123 from the database 126 of the SEM 100 and / or from another storage unit. Then, in method step S21, the primary electron beam is deflected using a deflection device in the form of a first deflection unit 9 and a second deflection unit 12, thereby guiding the primary electron beam to the loaded position. In other words, in this embodiment of the method according to the present invention, the relationship between the position of the inflection point and the landing energy is stored in the database 126 and / or the storage unit. If the landing energy is determined, the associated position can be loaded from the database 126 and / or the storage unit, and the primary electron beam can be guided to that position by means of a deflection device in the form of a first deflection unit 9 and a second deflection unit 12.

[0149] According to Figure 11 In another embodiment of the method according to the invention, it is additionally or alternatively proposed that when the landing energy is below a threshold, the position of the primary electron beam along the optical axis 20 of the SEM 100 is used, which is spaced smaller from the outer boundary of the objective lens 10 compared to (i) when the landing energy exceeds the threshold or (ii) when the landing energy corresponds to the threshold landing energy.

[0150] According to Figure 11 In another embodiment of the method according to the invention, it is additionally or alternatively proposed to reduce imaging errors in the resulting image. To this end, in this embodiment of the method according to the invention, the first deflection unit 9 and the second deflection unit 12 of the SEM 100 are manipulated according to the landing energy and / or a determined distance A to cause the primary electron beam to sweep across the object 15, thereby reducing and / or eliminating display errors of the object 15. At the same determined distance, the lower the landing energy, the more nonlinear the way the first deflection unit 9 and the second deflection unit 12 are excited. If the linear portion of each excitation remains constant, then at the same landing energy, the larger the determined distance A, the larger the nonlinear portion of the excitation of the first deflection unit 9 and the second deflection unit 12. The above-described embodiments with reference to nonlinear excitation are also applicable here.

[0151] Based on the method of the present invention Figure 11The implementation methods ensure that a sufficiently large image field of SEM 100 can always be achieved under different landing energies. In other words, the aforementioned position of the primary electron beam along the optical axis 20 (i.e., the turning point of the primary electron beam) is selected according to the set and / or determined landing energy, so that the desired image field of SEM 100 can be achieved. These implementation methods can also be performed manually and / or automatically.

[0152] All the above and following embodiments of the method according to the present invention are not limited to the described order of method steps. The present invention also includes different orders of method steps suitable for achieving the significance and objectives of the present invention. Alternatively or additionally, in the method according to the present invention, it is also proposed to perform at least two method steps in parallel. Furthermore, the above and following embodiments of the method according to the present invention are not limited to the complete scope of all method steps mentioned above or below. In particular, it is proposed that, in other embodiments, one or more method steps in the above or following method steps are omitted.

[0153] The features of the invention disclosed in this specification, in the accompanying drawings, and in the claims are important individually and in any combination for implementing the invention in its various embodiments. The invention is not limited to the described embodiments. The invention can be modified within the scope of the claims and taking into account the knowledge of those skilled in the art.

[0154] List of reference numerals

[0155] 1 Beam Generator

[0156] 2 Extraction Electrode

[0157] 3 control electrodes

[0158] 4 anodes

[0159] 5 First converging lens

[0160] 6 Second converging lens

[0161] 7-baffle unit

[0162] 8 Second detector unit

[0163] 9 First deflection unit

[0164] 10 objectives

[0165] 11-loop coil

[0166] 12 Second Deflection Unit

[0167] 13 Sample Rooms

[0168] 14 First Detector Unit

[0169] 15 objects

[0170] 16 Object Plane

[0171] 17 Pressure classifying plate retainer

[0172] 18 baffle openings

[0173] 19 Movable platform

[0174] 20 optical axes

[0175] 21 beam guide tube

[0176] 22 Extreme Boots

[0177] 23 Pole shoe gap

[0178] 25 mobile devices

[0179] 100SEM

[0180] 101 Electronic Source

[0181] 102 Extraction Electrode

[0182] 103 anode

[0183] 104 beam guide tube

[0184] 105 First converging lens

[0185] 106 Second Converging Lens

[0186] 107 First Objective

[0187] 108 First Baffle Unit

[0188] 108A First Baffle Opening

[0189] 109 Second baffle unit

[0190] 110 Extreme Boots

[0191] 111 coil

[0192] 112 individual electrodes

[0193] 113 tubular electrode

[0194] 114 Object Holder

[0195] 115 Second Deflection Unit

[0196] 116 First Detector

[0197] 116A Reverse Field Grille

[0198] 117 Second Detector

[0199] 118 Second baffle opening

[0200] 119 Sample Chamber Detector

[0201] 120 Sample Room

[0202] 121 Third Detector

[0203] 122 Platform

[0204] 123 control device

[0205] 124 monitor

[0206] 125 objects

[0207] 126 Database

[0208] 127 processor

[0209] 130 First Deflection Unit

[0210] 200 combination equipment

[0211] Sample Room 201

[0212] 300 Ionization Radiation Equipment

[0213] 301 Ion Beam Generator

[0214] Extraction electrode in 302 ion radiation equipment

[0215] 303 converging lens

[0216] 304 Second Objective

[0217] 306 configurable or selectable baffle

[0218] 307 First Deflection Unit

[0219] 308 Second Deflection Unit

[0220] 500 radiation detector

[0221] 600 First Moving Component

[0222] 601 housing

[0223] 602 Second Moving Element

[0224] 603 First stage rotation axis

[0225] 604 Third Moving Element

[0226] 605 Fourth Moving Element

[0227] 606 Fifth Moving Element

[0228] 607 Second Stage Rotation Axis

[0229] 608 drive control unit

[0230] M1 First Drive Unit

[0231] M2 Second Drive Unit

[0232] M3 Third Drive Unit

[0233] M4 Fourth Drive Unit

[0234] M5 Fifth Drive Unit

[0235] 709 First Beam Axis

[0236] 710 Second Beam Axis

[0237] The distance determined by A

[0238] The distance determined by A1

[0239] The distance determined by A2

[0240] OA optical axis

[0241] S1 Method Steps

[0242] S1A Method Steps

[0243] S1B Method Steps

[0244] S1C Method Steps

[0245] S2 Method Steps

[0246] S2A Method Steps

[0247] S20 Method Steps

[0248] S20A Method Steps

[0249] S21 Method Steps

Claims

1. A method for operating a particle radiation device (100, 200) for imaging, analyzing, and / or processing an object (15, 125), wherein the method comprises the following steps: - The distances (A, A1, A2) are determined using the control device (123) of the particle radiation device (100, 200), wherein the distances (A, A1, A2) are given by (a) the object distance between the outer boundary of the objective lens (10, 107, 304) of the particle radiation device (100, 200) and the object (15, 125) or (b) the focal plane distance between the outer boundary of the objective lens (10, 107, 304) of the particle radiation device and the focal plane (16) of the objective lens (10, 107, 304); - Using deflection devices (9, 12, 115, 130, 307, 308), the particle beam generated by the beam generator (1, 101, 301) of the particle radiation device (100, 200) is deflected according to a determined distance (A, A1, A2) to a position along the optical axis (20, 709, 710, OA) of the particle radiation device (100, 200) associated with the determined distance (A, A1, A2), wherein the deflection devices (9, 12, 115, 130, 307, 308) have at least one first deflection unit (9, 130, 307) and at least one second deflection unit (12, 115, 308), wherein the deflection unit is positioned along the optical axis (20, 709, 710, OA) when viewed from the beam generator (1, 101, 301) toward the objective lens (10, 107, 304). Arranged first are the first deflection units (9, 130, 307), followed by the second deflection units (12, 115, 308), wherein the center path of the particle beam has an axial distance perpendicular to the optical axis (20, 709, 710, OA) of the particle radiating device (100, 200) at the position along the optical axis (20, 709, 710, OA), wherein, for the determined distances (A, A1, A2), the axial distance of the center path of the particle beam at the position along the optical axis (20, 709, 710, OA) is less than all other axial distances of the center path of the particle beam perpendicular to the optical axis (20, 709, 710, OA) of the particle radiating device (100, 200), wherein, according to case (a) The determined distances (A, A1, A2), the other axial distances are arranged between the center of the second deflection unit (12, 115, 308) of the deflection device (9, 12, 115, 130, 307, 308) and the object (15, 125), and wherein for the distances (A, A1, A2) determined according to case (b), the other axial distances are arranged between the center of the second deflection unit (12, 115, 308) of the deflection device (9, 12, 115, 130, 307, 308) and the focal plane (16).

2. The method according to claim 1, characterized in that, (i) The distance (A, A1, A2) according to case (a) is determined by the relative movement of the object (15, 125) relative to the objective lens (10, 107, 304) and / or by determining the distance of the object. (ii) Position the focal plane (16) of the objective lens (10, 107, 304) by manipulating the objective lens (10, 107, 304) and / or determine the distance (A, A1, A2) according to case (b) by determining the distance of the focal plane.

3. The method according to claim 1 or 2, characterized in that, Determining the distance (A, A1, A2) according to case (a) includes at least one of the following method steps: (i) Move the object holder (19, 114, 122) on which the object (15, 125) is arranged along the optical axis (20, 709, 710, OA); (ii) Moving the object holder (19, 114, 122) on which the object (15, 125) is arranged relative to the optical axis (20, 709, 710, OA), wherein the movement is not perpendicular to the optical axis (20, 709, 710, OA); (iii) Using the moving device (25), the objective lens (10, 107, 304) of the particle radiation device (100, 200) is moved along the optical axis (20, 709, 710, OA); (iv) Using the moving device (25), the objective lens (10, 107, 304) of the particle radiation device (100, 200) is moved relative to the optical axis (20, 709, 710, OA), wherein the movement is not perpendicular to the optical axis (20, 709, 710, OA).

4. The method according to any one of the preceding claims, characterized in that, The position of the particle beam along the optical axis (20, 709, 710, OA) associated with the determined distance (A, A1, A2) is loaded into the control device (123) from the database (126) and / or storage unit, and wherein the particle beam is deflected using the deflection devices (9, 12, 115, 130, 307, 308) to guide the particle beam to the loaded position.

5. The method according to any one of the preceding claims, characterized in that, The control device (123) is used to calculate the position of the particle beam along the optical axis (20, 709, 710, OA) in relation to the determined distance (A, A1, A2).

6. The method according to any one of the preceding claims, characterized in that, An image of the object (15, 125) is generated by imaging the object (15, 125), wherein the objective lens (10, 107, 304) is excited with an objective lens current such that the image of the object (15, 125) meets the desired imaging criteria, and wherein the distance (A, A1, A2) is determined using the objective lens current.

7. The method according to any one of the preceding claims, characterized in that, The determined distances (A, A1, A2) are first distances, wherein the position of the particle beam along the optical axis (20, 709, 710, OA) is a first position, wherein the object distance is a first object distance, wherein the focal plane distance is a first focal plane distance, wherein the axial distance of the center path of the particle beam at the first position is a first axial distance, and wherein the method comprises the following method steps: - A second distance (A, A1, A2) is determined using the control device (123) of the particle radiation device (100, 200), wherein the second distance is greater than the first distance, and wherein the second distance is given by (c) a second object distance between the outer boundary of the objective lens (10, 107, 304) of the particle radiation device (100, 200) and the object (15, 125) or (b) a second focal plane distance between the outer boundary of the objective lens (10, 107, 304) of the particle radiation device (100, 200) and the focal plane (16) of the objective lens (10, 107, 304); - Using the deflection devices (9, 12, 115, 130, 307, 308), the particle beam is deflected according to a determined second distance to a second position associated with the second distance along the optical axis (20, 709, 710, OA) of the particle radiating device (100, 200), wherein the center path of the particle beam has a second axial distance perpendicular to the optical axis (20, 709, 710, OA) at the second position along the optical axis (20, 709, 710, OA), wherein, in the case of the determined second distance, the second axial distance of the center path of the particle beam at the second position along the optical axis (20, 709, 710, OA) is less than all other axial distances of the center path of the particle beam perpendicular to the optical axis (20, 709, 710, OA) of the particle radiating device (100, 200), wherein for case (c) The determined second distance (A, A1, A2), the other axial distances are arranged between the center of the second deflection unit (12, 115, 308) of the deflection device (9, 12, 115, 130, 307, 308) and the object (15, 125), and wherein for the distance (A, A1, A2) determined according to case (d), the other axial distances are arranged between the center of the second deflection unit (12, 115, 308) of the deflection device (9, 12, 115, 130, 307, 308) and the focal plane (16), wherein the distance between the second position and the outer boundary of the objective lens (10, 107, 304) is less than the distance between the first position and the outer boundary of the objective lens (10, 107, 304).

8. The method according to any one of the preceding claims, characterized in that, The control device (123) is used to set and / or determine the landing energy of the particles of the particle beam that will strike the object (15, 125), wherein the deflection device (9, 12, 115, 130, 307, 308) is used to additionally deflect the particle beam according to the landing energy to a position along the optical axis (20, 709, 710, OA) of the particle radiating device (100, 200) associated with the determined distance (A, A1, A2).

9. The method according to claim 8, characterized in that, The control device (123) is a control device having an acceleration device (112, 113) and / or a deceleration device (112, 113) for the particles of the particle beam.

10. The method according to any one of claims 8 or 9, characterized in that, When the landing energy is below a threshold, the position of the particle beam along the optical axis (20, 709, 710, OA) associated with the determined distance (A, A1, A2) is used at a position that is smaller than the position of the particle beam along the optical axis (20, 709, 710, OA) when the landing energy exceeds the threshold or when the landing energy corresponds to the threshold landing energy, compared to the position of the particle beam along the optical axis (20, 709, 710, OA) with respect to the outer boundary of the objective lens (10, 107, 304).

11. The method according to any one of claims 8 to 10, characterized in that, The method has at least one of the following method steps: (i) The scanner devices (9, 12, 115, 130, 307, 308) of the particle radiation device (100, 200) are manipulated according to the landing energy and / or the determined distance (A, A1, A2) to make the particle beam sweep across the object (15, 125), thereby reducing and / or eliminating the display error of the object (15, 125); (ii) Given the same determined distances (A, A1, A2), the lower the landing energy, the more nonlinear the deflection of the particle beam by the scanner devices (9, 12, 115, 130, 307, 308) becomes. (iii) If the linear portion of the excitation of the scanner devices (9, 12, 115, 130, 307, 308) remains constant, then for the same landing energy, the larger the determined distance (A, A1, A2), the larger the nonlinear portion of the excitation of the scanner devices (9, 12, 115, 139, 397, 308).

12. A method for operating a particle radiation device (100, 200) for imaging, analyzing, and / or processing an object (15, 125), wherein the method comprises the following steps: - The landing energy of the particles of the particle beam generated by the beam generator (1, 101, 301) of the particle radiation device (100, 200) to hit the object (15, 125) is set by the control device (123), and / or the landing energy is determined by the control device (123). - Using deflection devices (9, 12, 115, 130, 307, 308), the particle beam is deflected according to the landing energy to a position associated with the set and / or determined landing energy along the optical axis (20, 709, 710, OA) of the particle radiating device (100, 200). The deflection devices have at least one first deflection unit (9, 130, 307) and at least one second deflection unit (12, 115, 308), wherein, viewed from the beam generator (1, 101, 301) toward the objective lens (10, 107, 304), the first deflection unit (9, 130, 307) is arranged first along the optical axis (20, 709, 710, OA), followed by the second deflection unit (12, 115, 308). The second deflection unit (12, 115, 308) wherein the center path of the particle beam has an axial distance perpendicular to the optical axis (20, 709, 710, OA) of the particle radiating device (100, 200) at the position along the optical axis (20, 709, 710, OA), wherein, for a set and / or determined landing energy, the axial distance of the center path of the particle beam at the position along the optical axis (20, 709, 710, OA) associated with the set and / or determined landing energy is less than all other axial distances of the center path of the particle beam perpendicular to the optical axis (20, 709, 710, OA) of the particle radiating device (100, 200), wherein the other axial distances (a) (a) The center of the second deflection unit (12, 115, 308) of the deflection device (9, 12, 115, 130, 307, 308) is arranged between the object (15, 125), or (b) the center of the second deflection unit (12, 115, 308) of the deflection device (9, 12, 115, 130, 307, 308) is arranged between the center of the second deflection unit (12, 115, 308) of the deflection device (9, 12, 115, 130, 307, 308) and the focal plane (16) of the objective lens (10, 107, 304) of the particle radiation device (100, 200).

13. The method according to claim 12, characterized in that, The control device (123) is a control device having an acceleration device (112, 113) and / or a deceleration device (112, 113) for the particles of the particle beam.

14. The method according to claim 12 or 13, characterized in that, The position of the particle beam along the optical axis (20, 709, 710, OA) associated with the set and / or determined landing energy is loaded into the control device (123) from the database (126) and / or storage unit, and wherein the particle beam is deflected using the deflection devices (9, 12, 115, 130, 307, 308) to guide the particle beam to the loaded position.

15. The method according to any one of claims 12 to 14, characterized in that, When the landing energy is below the threshold, the position of the particle beam along the optical axis (20, 709, 710, OA) is used such that the position is less spaced from the outer boundary of the objective lens (10, 107, 304) compared to (i) the position of the particle beam along the optical axis (20, 709, 710, OA) when the landing energy exceeds the threshold or (ii) when the landing energy corresponds to the threshold landing energy.

16. The method according to any one of claims 12 to 15, characterized in that, The method has at least one of the following method steps: (i) The scanner devices (9, 12, 115, 130, 307, 308) of the particle radiation device (100, 200) are manipulated according to the set and / or determined landing energy to make the particle beam sweep across the object (15, 125), thereby reducing and / or eliminating the display error of the object (15, 125). (ii) When the working distance (A, A1, A2) is the same, the lower the set and / or determined landing energy, the more nonlinear the deflection of the particle beam by the scanner device (9, 12, 115, 130, 307, 308) will be. (iii) If the linear portion of the excitation of the scanner devices (9, 12, 115, 130, 307, 308) remains constant, then, given the same set and / or determined landing energy, the greater the working distance (A, A1, A2), the greater the nonlinear portion of the excitation of the scanner devices (9, 12, 115, 130, 307, 308).

17. The method according to any one of the preceding claims, characterized in that, Electrostatic and / or magnetic deflection devices (9, 12, 115, 130, 307, 308) are used as the deflection devices (9, 12, 115, 130, 307, 308).

18. A computer program product having program code that can be loaded into a processor (127) and, when executed, controls a particle radiation device (100, 200) to perform the method according to at least one of the preceding claims.

19. A particle radiation device (100, 200) for imaging, analyzing, and / or processing objects (15, 125), said particle radiation device having - At least one beam generator (1, 101, 301) for generating a particle beam with charged particles; - At least one objective lens (10, 107, 304) for focusing the particle beam onto the object (15, 125), wherein the object (15, 125) is movable relative to the objective lens (10, 107, 304); - At least one deflection device (9, 12, 115, 130, 307, 308), the deflection device having at least one first deflection unit (9, 130, 307) and at least one second deflection unit (12, 115, 308), wherein, viewed from the beam generator (1, 101, 301) toward the objective lens (10, 107, 304), the first deflection unit (9, 130, 307) is arranged first, followed by the second deflection unit (12, 115, 308) along the optical axis (20, 709, 710, OA) of the particle radiation device (100, 200). - At least one detector unit (8, 14, 116, 117, 119, 121, 500) for detecting interacting particles and / or interacting radiation resulting from the interaction of the particle beam with the object (15, 125); and - At least one control device (123), the control device having at least one processor (127) in which the computer program product according to claim 18 is loaded.

20. The particle radiation device (100, 200) according to claim 19, characterized in that, The particle radiation device (100, 200) has at least one acceleration device (112, 113) for accelerating particles, and / or a deceleration device (112, 113) for decelerating particles in the particle radiation device (100, 200).

21. The particle radiation device (100, 200) according to claim 19 or 20, characterized in that, The particle radiation device (100, 200) has at least one of the following features: (i) Designed as a movable object holder (19, 114, 122), at which the object (15, 125) is arranged. (ii) A moving device (25) for moving the objective lens (10, 107, 304).

22. The particle radiation device (100, 200) according to any one of claims 19 to 21, characterized in that, The particle radiation device (100, 200) has at least one of the following features: (i) The first deflection unit (9, 130, 307) is arranged in the objective lens (10, 107, 304); (ii) The second deflection unit (12, 115, 308) is arranged in the objective lens (10, 107, 304).

23. The particle radiation device (200) according to any one of claims 19 to 22, characterized in that, The beam generator (101) is designed as a first beam generator, and the particle beam is formed as a first particle beam with a first charged particle, wherein the objective lens (107) is designed as a first objective lens for focusing the first particle beam onto the object (125), and wherein the particle radiation device (200) further comprises: (i) at least one second beam generator (301), the second beam generator being used to generate a second particle beam carrying a second charged particle; and (ii) at least one second objective lens (304) for focusing the second particle beam onto the object (125).

24. The particle radiation device (100, 200) according to any one of claims 19 to 23, characterized in that, The particle radiation devices (100, 200) are electron radiation devices and / or ion radiation devices.

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