Chemical mechanical polishing composition and method of polishing substrate

Abstract

The invention provides a chemical mechanical polishing composition and a method for polishing a base material, and relates to the technical field of chemical mechanical polishing. The chemical mechanical polishing composition includes: ceria abrasive particles; a polyol compound; the composite selective adsorbent comprises phosphate ester and amino acid, the content of the phosphate ester is 0.01-0.3 wt%, and the content of the amino acid is 0.05-0.5 wt%; and water, wherein the pH value of the chemical mechanical polishing composition is 4-5.5. According to the chemical mechanical polishing composition provided by the invention, the phosphate ester and the amino acid are taken as a composite selective adsorbent, and the polyhydric alcohol compound is taken as a polishing accelerant and a stabilizing agent, so that the high polishing rate of the polishing composition on silicon oxide is ensured, and a high silicon oxide / silicon nitride selection ratio and a self-stopping function on the surface of silicon nitride are realized.

Description

Technical Field

[0001] This application relates to the field of chemical mechanical polishing technology, and more particularly to a chemical mechanical polishing composition and a method for polishing a substrate. Background Technology

[0002] As integrated circuit (IC) dimensions shrink and the number of ICs on a chip increases, the components that make up the circuit must be packed tightly together to fit the limited available space on the chip. Effective isolation between circuits is crucial to ensure optimal semiconductor performance. To this end, shallow trenches are etched into the semiconductor substrate and filled with insulating material to insulate the active areas of the ICs. The shallow trench isolation (STI) process involves forming a silicon nitride layer on a silicon substrate, followed by etching or photolithography to form shallow trenches, and then depositing an insulating layer (e.g., oxide) to fill the trenches.

[0003] Because the trench or line depth formed by this method varies, it is typically necessary to deposit excess insulating material on the substrate to ensure complete filling of all trenches. This excess insulating material is then usually removed via a chemical / mechanical planarization process to expose the silicon nitride layer. Once the silicon nitride layer is exposed, the largest area on the substrate containing silicon nitride is exposed to a chemical / mechanical polishing composition, which must then be polished to achieve a highly flat and uniform surface.

[0004] When STI substrates are polished using conventional chemical mechanical polishing compositions, over-polishing or digging of the substrate surface, as well as localized structural defects such as micro-scratches, have been observed. This phenomenon leading to over-polishing and digging in STI structures is called "dishing." Dishing of the substrate shape can result in insufficient separation between transistors and their components, potentially causing short circuits and adversely affecting device manufacturing; therefore, dishing is undesirable. Furthermore, over-polishing can lead to oxide loss and exposure of damage caused by polishing or chemical activity of underlying oxide layers, which negatively impacts device quality and performance. Therefore, there remains a need in this technical field for polishing compositions and methods that offer ideal selectivity for silicon oxide, silicon nitride, and polysilicon, with suitable removal rates, low defect rates, and good dishing performance. Summary of the Invention

[0005] This application provides a chemical mechanical polishing composition and a method for polishing a substrate, using phosphate ester and amino acid as a composite selective adsorbent, which can effectively passivate the silicon nitride surface and reduce the polishing rate of silicon nitride; and the composite selective adsorbent has weak adsorption on the silicon oxide surface, ensuring a high silicon oxide polishing rate, thereby achieving a high silicon oxide / silicon nitride selectivity ratio and a self-stopping function on the silicon nitride surface.

[0006] In a first aspect, this application provides a chemical mechanical polishing composition comprising: cerium dioxide abrasive particles; a polyol compound; a composite selective adsorbent, wherein the composite selective adsorbent is a phosphate ester and an amino acid, wherein the phosphate ester content is 0.01–0.3 wt% and the amino acid content is 0.05–0.5 wt%; and water, wherein the pH value of the chemical mechanical polishing composition is 4–5.5.

[0007] In one possible implementation, the molar ratio of the phosphate ester to the amino acid is 1:1 to 1:2, and the total content of the composite selective adsorbent is 0.1 to 0.7 wt%. Preferably, the molar ratio of the phosphate ester to the amino acid is 1:1.5, and the total content of the composite selective adsorbent is 0.4 to 0.6 wt%. More preferably, the total content of the composite selective adsorbent is 0.5 wt%.

[0008] In one possible embodiment, the phosphate ester is a C4-C12 monophosphate ester, and the phosphate ester is selected from one or more of lauryl phosphate, hexyl phosphate, butyl phosphate, hydroxybutyl phosphate, octyl phosphate, and decyl phosphate.

[0009] In one possible implementation, the amino acid is arginine or lysine.

[0010] In one possible implementation, the weight ratio of the polyol compound to the composite selective adsorbent is 1:1 to 1:5.

[0011] In one possible implementation, the polyol compound is selected from one or more of sorbitol, xylitol, mannitol, erythritol, and ribitol.

[0012] In one possible implementation, the content of the polyol compound is 0.05–0.3 wt%. Preferably, the content of the polyol compound is 0.1–0.2 wt%.

[0013] In one possible implementation, the polyol compound is sorbitol, and the content of the polyol compound is 0.1 to 0.2 wt%.

[0014] In one possible implementation, the cerium dioxide has a particle size of 90–110 nm and a content of 1–3 wt%. Preferably, the cerium dioxide has a particle size of 110 nm and a content of 1 wt%.

[0015] In a second aspect, this application provides a method for chemically mechanically polishing a substrate, comprising: (i) contacting the substrate with a chemically mechanically polishing composition, the chemically mechanically polishing composition comprising: cerium dioxide abrasive particles; a polyol compound; a composite selective adsorbent, the composite selective adsorbent being a phosphate ester and an amino acid, the phosphate ester being present in a content of 0.01–0.3 wt% and the amino acid being present in a content of 0.05–0.5 wt%; and water, the chemically mechanically polishing composition having a pH value of 4–5.5;

[0016] (ii) moving the chemical mechanical polishing composition relative to the substrate; and

[0017] (iii) Grind away at least a portion of the substrate to polish the substrate.

[0018] In the above technical solution, by using phosphate esters and amino acids as composite selective adsorbents, their synergistic effect effectively passivates the silicon nitride surface and reduces the polishing rate of silicon nitride. The composite selective adsorbent has weak adsorption on the silicon oxide surface, ensuring a high silicon oxide polishing rate, thereby achieving a high silicon oxide / silicon nitride selectivity ratio and a self-stopping function on the silicon nitride surface. Polyol compounds can act as polishing promoters and stabilizers, forming a network structure with phosphate esters and cerium dioxide particles through multiple hydrogen bonds, which helps to improve the dispersibility and stability of the polishing composition. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0020] It should be understood that the term "and / or" as used in this application specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0021] It should be noted that the following embodiments are examples of this application and are used only to illustrate this application, and are not intended to limit this application. Other combinations and various modifications within the scope of this application are possible without departing from the spirit or scope of this application.

[0022] The following is a detailed description of the chemical mechanical polishing composition and polishing substrate method provided in this application.

[0023] The chemical mechanical polishing composition of this application embodiment comprises, is substantially composed of, or is composed of: cerium dioxide abrasive particles; a polyol compound; a composite selective adsorbent, wherein the composite selective adsorbent is a phosphate ester and an amino acid; and water.

[0024] In this application, the content of phosphate ester is 0.01 to 0.3 wt%. For example, the content of phosphate ester is about 0.01 wt% or higher, about 0.5 wt% or higher, about 0.15 wt% or higher, or about 0.25 wt% or higher. Alternatively, the content of phosphate ester is about 0.3 wt% or lower, about 0.25 wt% or lower, about 0.2 wt% or lower, about 0.15 wt% or lower, or about 0.1 wt% or lower.

[0025] The amino acid content is 0.05 to 0.5 wt%. For example, the amino acid content is about 0.05 wt% or higher, 0.15 wt% or higher, 0.25 wt% or higher, or about 0.35 wt% or higher. Alternatively, the amino acid content is about 0.5 wt% or lower, about 0.4 wt% or lower, about 0.3 wt% or lower, about 0.2 wt% or lower, or about 0.1 wt% or lower.

[0026] In this application, the pH value of the chemical mechanical polishing composition is 4 to 5.5. For example, the pH value of the polishing composition is about 5.5 or less than 5.5, or about 5 or less than 5. Furthermore, the pH value of the polishing composition is about 4 or greater than 4, about 4.5 or greater than 4.5, or about 5 or greater than 5.

[0027] The chemical mechanical polishing composition provided in this application uses phosphate esters and amino acids as a composite selective adsorbent. These two components have a synergistic effect, effectively passivating the silicon nitride surface, preventing cerium dioxide particles from contacting the silicon nitride, and reducing the polishing rate of the silicon nitride. Simultaneously, the composite selective adsorbent has weak adsorption on the silicon oxide surface, ensuring a high polishing rate for silicon oxide by the polishing composition, thus achieving a high silicon oxide / silicon nitride selectivity ratio and a self-stopping function on the silicon nitride surface. In addition, the polishing composition also includes polyol compounds, which can act as polishing promoters and stabilizers, as well as pH buffers. Furthermore, the polyol compounds can form a network structure with phosphate esters and cerium dioxide particles through multiple hydrogen bonds, which helps improve the dispersibility and stability of the polishing composition, thereby achieving a high polishing rate for silicon oxide.

[0028] In this application, the molar ratio of phosphate ester to amino acid is 1:1 to 1:2. Preferably, the molar ratio of phosphate ester to amino acid is 1:1.5. For example, the molar ratio of phosphate ester to amino acid is about 1:1, about 3:4, about 2:3, or 1:2. When the molar ratio of phosphate ester to amino acid is within the above range, the phosphate ester and amino acid can exert a good synergistic effect, and the polishing composition has a high silicon oxide polishing rate and a low silicon nitride polishing rate, achieving a high silicon oxide / silicon nitride selectivity ratio and a self-stopping function on the silicon nitride surface. If the molar ratio of phosphate ester to amino acid is too low or too high, the synergistic effect will be destroyed, affecting the adsorption and interaction between the polishing composition and the polished surface, resulting in a slower silicon oxide polishing rate, or affecting the passivation of the silicon nitride surface, resulting in a lower silicon oxide / silicon nitride selectivity ratio, or a higher silicon nitride polishing rate.

[0029] In this application, the total content of the composite selective adsorbent is 0.1 to 0.7 wt%. Preferably, the total content of the composite selective adsorbent is 0.4 to 0.6 wt%, and more preferably, the total content of the composite selective adsorbent is 0.5 wt%. For example, the total content of the composite selective adsorbent is about 0.1 wt% or higher, about 0.2 wt% or higher, about 0.3 wt% or higher, about 0.4 wt% or higher, about 0.5 wt% or higher, or about 0.6 wt% or higher. Alternatively, the total content of the composite selective adsorbent is about 0.7 wt% or lower, 0.6 wt% or lower, 0.5 wt% or lower, 0.4 wt% or lower, 0.3 wt% or lower, or about 0.2 wt% or lower.

[0030] Preferably, the phosphate ester is a C4-C12 monophosphate ester, and the phosphate ester is selected from one or more of lauryl phosphate monoester, hexyl phosphate monoester, butyl phosphate monoester, hydroxybutyl phosphate monoester, octyl phosphate monoester, and decyl phosphate monoester.

[0031] Preferably, the amino acid is arginine or lysine.

[0032] In this application, the weight ratio of the polyol compound to the composite selective adsorbent is 1:1 to 1:5. For example, the weight ratio of the polyol compound to the composite selective adsorbent is about 1:1, about 3:5, about 1:2, about 3:7, about 2:5, or about 1:5. When the weight ratio of the polyol compound to the composite selective adsorbent is within the above range, the polyol compound can form a network structure with the phosphate ester and cerium dioxide particles through multiple hydrogen bonds, which better improves the dispersibility and stability of the polishing composition, enhances the polishing rate and uniformity, and avoids surface defects such as scratches and unevenness.

[0033] Preferably, the polyol compound is selected from one or more of sorbitol, xylitol, mannitol, erythritol, and ribitol.

[0034] In this application, the content of the polyol compound is 0.05 to 0.3 wt%. Preferably, the content of the polyol compound is 0.1 to 0.2 wt%. For example, the content of the polyol compound is about 0.1 wt% or higher, about 0.12 wt% or higher, about 0.15 wt% or higher, about 0.18 wt% or higher, about 0.2 wt% or lower, or about 0.22 wt% or higher. Alternatively, the content of the polyol compound is about 0.3 wt% or lower, 0.28 wt% or lower, 0.25 wt% or lower, 0.22 wt% or lower, 0.2 wt% or lower, about 0.18 wt% or lower, or about 0.15 wt% or lower.

[0035] Preferably, the polyol compound is sorbitol, and the content of sorbitol is 0.1-0.2 wt%.

[0036] In this application, the cerium dioxide particle size is 90–110 nm, and the cerium dioxide may have any suitable average particle size between about 90 and 110 nm. For example, cerium dioxide may have an average particle size of about 90 nm or more, 95 nm or more, or 100 nm or more. Furthermore, the abrasive particles may have an average particle size of about 110 nm or less, or 105 nm or less.

[0037] The content of cerium dioxide is 1 to 3 wt%. For example, about 1 wt% or more, about 1.5 wt% or more, about 2 wt% or more. In addition, cerium dioxide can be suspended in an aqueous medium with a concentration of about 3 wt% or less, about 2.5 wt% or less, or about 2 wt% or less.

[0038] Preferably, the cerium dioxide particle size is 110 nm and the cerium dioxide content is 1 wt%.

[0039] In this application, the chemical mechanical polishing composition may further include additives commonly used in the art, such as pH adjusters and bactericides. The pH adjuster may be KOH or HNO3; adding an appropriate amount of dilute KOH or HNO3 solution can keep the pH value of the chemical mechanical polishing composition within a suitable range. The bactericide may be 2-methyl-4-isothiazolin-3-one, 5-chloro-2-methyl-4-isothiazolin-3-one, etc.

[0040] In a second aspect, this application further provides a method for chemically mechanically polishing a substrate, comprising: (i) contacting the substrate with a chemically mechanically polishing composition comprising: cerium dioxide abrasive particles; a polyol compound; a composite selective adsorbent, wherein the composite selective adsorbent is a phosphate ester and an amino acid, the phosphate ester being 0.01–0.3 wt% and the amino acid being 0.05–0.5 wt%; and water, wherein the pH of the chemically mechanically polishing composition is 4–5.5; (ii) moving the chemically mechanically polishing composition relative to the substrate; and (iii) abrading at least a portion of the substrate to polish the substrate.

[0041] Although the chemical mechanical polishing composition of this application can be used to polish any substrate (e.g., integrated circuits, metals, ILD layers, semiconductors, and thin films), it is particularly suitable for polishing substrates containing silicon oxide and silicon nitride.

[0042] The technical solution of the present invention will be further described below with reference to specific embodiments.

[0043] In the examples and comparative examples, the physical properties of the chemical mechanical polishing compositions were determined according to the following methods.

[0044] (1) Specific polishing conditions: The polishing machine was a Reflexion LK, the polishing pad was a DH3410, the stage speed was 113 rpm, the carrier speed was 107 rpm, the polishing head pressure was 2.0 psi, the polishing slurry flow rate was 300 mL / min, and the polishing time was 1 min. The polished wafer was a film wafer loaded with OX and SiN.

[0045] (2) Polishing rate of OX: The difference in OX film thickness before and after 1 minute of grinding is the polishing rate of OX. The film thickness is measured using a four-probe resistivity tester.

[0046] (3) Polishing rate of SiN: The difference in SiN film thickness before and after 1 minute of polishing is the polishing rate of SiN. The film thickness is measured using a four-probe resistivity tester.

[0047] (4) Defects: The number of defects of 0.08 μm on the wafer was measured using a KLA-Tencor SP2 analyzer, and the average number of defects in 10 wafers was recorded.

[0048] <Preparation of Cerium Oxide>

[0049] Preparation Example 1

[0050] Cerium nitrate hexahydrate (analytical grade) was added to a mixed solvent of ethanol and water in a volume ratio of 3:1 to obtain a cerium salt solution with a concentration of 0.1 mol / L. Then, PVP with a weight average molecular weight of 300,000 was added to make the concentration 0.2 mol / L. The cerium salt solution was heated at 180 °C for 12 h, followed by solid-liquid separation, washing, and drying at 80 °C for 12 h to obtain cerium dioxide. The average particle size of cerium dioxide was 70 nm.

[0051] Preparation Example 2

[0052] Cerium nitrate hexahydrate (analytical grade) was added to a mixed solvent of ethanol and water in a volume ratio of 3:1 to obtain a cerium salt solution with a concentration of 0.1 mol / L. Then, PVP with a weight average molecular weight of 300,000 was added to make the concentration 0.15 mol / L. The cerium salt solution was heated at 180 °C for 12 h, followed by solid-liquid separation, washing, and drying at 80 °C for 12 h to obtain cerium dioxide. The average particle size of cerium dioxide was 90 nm.

[0053] Preparation Example 3

[0054] Cerium nitrate hexahydrate (analytical grade) was added to a mixed solvent of ethanol and water in a volume ratio of 3:1 to obtain a cerium salt solution with a concentration of 0.1 mol / L. Then, PVP with a weight average molecular weight of 300,000 was added to make the concentration 0.1 mol / L. The cerium salt solution was heated at 180 °C for 12 h, followed by solid-liquid separation, washing, and drying at 80 °C for 12 h to obtain cerium dioxide. The average particle size of cerium dioxide was 110 nm.

[0055] <Chemical Mechanical Polishing Composition>

[0056] Tables 1, 3, and 5 show the components of Examples 1-25 and Comparative Examples 1-8 of the chemical mechanical polishing compositions of this application, wherein the ratio of the two composite selective adsorbents is a molar ratio. All components are mixed thoroughly according to the components given in Tables 1, 3, and 5, and the mass percentage is brought to 100% with deionized water. The pH value is adjusted with KOH or HNO3. The chemical mechanical polishing compositions of this application can also be prepared as concentrated samples first, and then diluted with deionized water to the concentration shown in the examples before use.

[0057] Table 1. Components of the chemical mechanical polishing compositions of Examples 1-9 and Comparative Examples 1-6

[0058]

[0059] Table 2 shows the grinding results of Examples 1-9 and Comparative Examples 1-6.

[0060]

[0061]

[0062] Table 1 provides the components of the chemical mechanical polishing compositions of Examples 1-9 and Comparative Examples 1-6, with adjustments made to the type and content of the composite selective adsorbent. As shown in Table 2, comparing Examples 1-9 reveals that Examples 2-3 exhibit the best polishing effect and the lowest number of wafer surface defects. In Examples 1-9, the molar ratio of phosphate ester to amino acid was 1:1 to 1:2, and the total content of phosphate ester and amino acid was 0.1 to 0.7 wt%. The composite selective adsorbent showed good selective adsorption, resulting in a high OX polishing rate and a high OX / SiN selectivity ratio. Furthermore, the weight ratio of polyol compound to composite selective adsorbent was between 1:1 and 1:5. Phosphate ester and amino acid exhibited a synergistic effect, and the polyol compound could form a network structure with the composite selective adsorbent, improving the dispersibility and stability of the polishing composition, thereby enhancing the polishing uniformity and reducing the number of wafer surface defects.

[0063] In Comparative Examples 1 and 2, when the content of the composite selective adsorbent was too high or too low, the selective adsorption effect of the composite selective adsorbent weakened, resulting in a lower OX polishing rate, a higher SiN polishing rate, a lower OX / SiN selectivity ratio, and a higher number of wafer surface defects. Comparing Examples 1-9 and Comparative Example 3, it can be seen that when the molar ratio of phosphate ester to amino acid was too high, no synergistic effect occurred between the phosphate ester and amino acid, resulting in a higher SiN polishing rate, a lower OX / SiN selectivity ratio, and a higher number of wafer surface defects. Comparing Examples 1-9 and Comparative Example 4, it can be seen that without the addition of the composite selective adsorbent, the OX polishing rate was lower, the SiN polishing rate was higher, the OX / SiN selectivity ratio was lower, and the number of wafer surface defects was higher. Comparing Examples 1-9 and Comparative Examples 5 and 6, it can be seen that when only phosphate ester or amino acid was used as the selective adsorbent, the SiN polishing rate was higher, the OX / SiN selectivity ratio was lower, and the number of wafer surface defects was higher.

[0064] Table 3. Components of the chemical mechanical polishing compositions of Examples 10-19 and Comparative Examples 7-8

[0065]

[0066]

[0067] Table 4 shows the grinding results of Examples 10-19 and Comparative Examples 7-8.

[0068]

[0069] Table 3 provides the components of the chemical mechanical polishing compositions of Examples 10-19 and Comparative Examples 7-8, with adjustments made to the types and contents of polyol compounds. As shown in Table 4, comparing Examples 10-16 reveals that Examples 11-12 exhibit the best polishing effect, with higher OX polishing rates, lower SiN polishing rates, and higher OX / SiN selectivity. In Examples 10-16, the weight ratio of polyol compounds to composite selective adsorbents was between 1:1 and 1:5. The polyol compounds could form a network structure with the composite selective adsorbents, improving the dispersibility and stability of the polishing compositions, enhancing their polishing uniformity, resulting in higher OX polishing rates, lower SiN polishing rates, and higher OX / SiN selectivity.

[0070] Comparing Examples 10-16 and Examples 17-18, it is evident that when the weight ratio of the polyol compound to the composite selective adsorbent is too high or too low, the dispersibility and stability of the polyol compound are weakened, and the selective adsorption effect of the composite selective adsorbent is affected, resulting in a low OX / SiN selectivity ratio. Comparing Examples 10-16, Example 19, and Comparative Example 7, it is evident that when the content of the polyol compound is excessive or other polyol compounds are added, the dispersibility and stability of the polyol compound are weak, and the polishing performance of the polishing composition is generally poor. Comparing Examples 10-16 and Comparative Example 8, it is evident that when no polyol compound is added, the OX polishing rate is low, the SiN polishing rate is increased, the OX / SiN selectivity ratio is low, and the number of surface defects on the wafer increases.

[0071] Table 5 Components of the chemical mechanical polishing compositions in Examples 20-25

[0072]

[0073] Table 6. Grinding results of Examples 20-25

[0074]

[0075] Table 5 provides the components of the chemical mechanical polishing compositions of Examples 20-25, with adjustments made to the cerium dioxide particle size and content. As shown in Table 6, comparing Examples 20-25 reveals that Example 20 exhibits the best polishing effect, with a higher OX polishing rate, a lower SiN polishing rate, a higher OX / SiN selectivity, and fewer surface defects. Comparing Examples 20-22 and Example 24, it is evident that when the cerium dioxide content is excessive, both the OX and SiN polishing rates increase, the OX / SiN selectivity decreases, and the number of surface defects increases. Comparing Examples 20-23 and Example 25, it is clear that when the cerium dioxide particle size is too small, both the OX and SiN polishing rates are low, resulting in lower polishing efficiency.

[0076] Although the embodiments of this application have been disclosed above, they are not limited to the applications listed in the specification and embodiments. They can be applied to various fields suitable for this application. For those skilled in the art, other modifications can be easily made. Therefore, without departing from the general concept defined by the claims and their equivalents, this application is not limited to the specific details and embodiments shown and described herein.

Claims

1. A chemical mechanical polishing composition, characterized in that, include: Cerium dioxide abrasive particles; Polyol compounds; A composite selective adsorbent, wherein the composite selective adsorbent is a phosphate ester and an amino acid, wherein the content of the phosphate ester is 0.01–0.3 wt%, and the content of the amino acid is 0.05–0.5 wt%; and Water, wherein the pH of the chemimechanical polishing composition is 4 to 5.

5.

2. The composition according to claim 1, characterized in that, The molar ratio of the phosphate ester to the amino acid is 1:1 to 1:2, and the total content of the composite selective adsorbent is 0.1 to 0.7 wt%.

3. The composition according to claim 2, characterized in that, The phosphate ester is a C4-C12 monophosphate ester, and the phosphate ester is selected from one or more of lauryl phosphate, hexyl phosphate, butyl phosphate, hydroxybutyl phosphate, octyl phosphate, and decyl phosphate.

4. The composition according to claim 2, characterized in that, The amino acid is arginine or lysine.

5. The composition according to any one of claims 1 to 4, characterized in that, The weight ratio of the polyol compound to the composite selective adsorbent is 1:1 to 1:

5.

6. The composition according to claim 5, characterized in that, The polyol compound is selected from one or more of sorbitol, xylitol, mannitol, erythritol, and ribitol.

7. The composition according to claim 5, characterized in that, The content of the polyol compound is 0.05 to 0.3 wt%.

8. The composition according to claim 5, characterized in that, The polyol compound is sorbitol, and the content of the polyol compound is 0.1-0.2 wt%.

9. The composition according to any one of claims 1 to 4, characterized in that, The cerium dioxide has a particle size of 90–110 nm and a content of 1–3 wt%.

10. A method for chemically and mechanically polishing a substrate, characterized in that, include: (i) Contacting a substrate with a chemical mechanical polishing composition, the chemical mechanical polishing composition comprising: Cerium dioxide abrasive particles; Polyol compounds; A composite selective adsorbent, wherein the composite selective adsorbent is a phosphate ester and an amino acid, wherein the content of the phosphate ester is 0.01–0.3 wt%, and the content of the amino acid is 0.05–0.5 wt%; and Water, wherein the pH of the chemimechanical polishing composition is 4 to 5.5; (ii) Moving the chemical mechanical polishing composition relative to the substrate; (iii) Grinding away at least a portion of the substrate to polish the substrate.

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