Layout generation method for load effect compensation and related device

Abstract

The invention discloses a layout generation method for load effect compensation and a related device, which are applied to the technical field of photoetching and comprise the following steps: acquiring photomask data; carrying out grid division on the mask graph according to the photomask data, and determining layout density in each grid; comparing the layout density of each grid with a target density, and determining a density difference value corresponding to each grid; determining a virtual graph corresponding to each grid according to the density difference value; and adding a corresponding virtual graph in a layout area corresponding to the grid to form a compensated mask plate graph. By performing grid division on the mask plate graph, calculating the specific layout density in each grid and adding the corresponding virtual graph to the layout area corresponding to the grid according to the difference value between the layout density and the target density, the graph density of the layout area in each grid can be effectively compensated, so that the load effect of each area in the layout is balanced, and the performance of the mask plate is improved. And the etching uniformity is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photolithography, in particular to a layout generation method for load effect compensation, a layout generation device for load effect compensation, a layout generation equipment for load effect compensation and a computer readable storage medium. BACKGROUND

[0002] In the manufacture of photomask, when the dry etching process transfers the pattern from the photoresist layer to the metal layer such as the chromium layer, the etching load effect will be caused due to the unevenness of the local pattern density of the layout. The load effect will cause the etching rate of the dense area and the isolated area to be different, and the critical dimension (CD) will be systematically deviated, which is usually greater than 5nm, and will cause the etching morphology to be uneven, and seriously reduce the pattern fidelity and yield of the photomask.

[0003] The limitations of the existing solutions to improve the load effect include: first, only global optimization can be performed, and it is difficult to accurately compensate the load effect caused by the local density change; second, only the macroscopic density can be balanced, and the micro load effect caused by the complex layout cannot be adaptively eliminated; third, the sub-resolution assist feature (SRAF) is specifically used for correcting the optical proximity effect, which is essentially different from solving the etching uniformity problem.

[0004] Therefore, there is an urgent need in the art for a technical solution capable of automatically responding to the local density change of the layout, dynamically generating virtual patterns, and physically compensating the load effect in the etching of the photomask. SUMMARY

[0005] The purpose of the present application is to provide a layout generation method for load effect compensation, which can automatically respond to the local density change of the layout, dynamically generate virtual patterns, and physically compensate the load effect in the etching of the photomask. Another purpose of the present application is to provide a layout generation device for load effect compensation, a layout generation equipment for load effect compensation and a computer readable storage medium, which can automatically respond to the local density change of the layout, dynamically generate virtual patterns, and physically compensate the load effect in the etching of the photomask.

[0006] To solve the above technical problems, the present application provides a layout generation method for load effect compensation, comprising:

[0007] Obtaining photomask data;

[0008] Grid dividing the mask layout according to the photomask data, and determining the layout density in each grid;

[0009] The layout density of each grid is compared with the target density to determine a density difference value corresponding to each grid;

[0010] A virtual pattern corresponding to each grid is determined according to the density difference value;

[0011] A corresponding virtual pattern is added to the layout area corresponding to the grid to form a compensated mask layout.

[0012] Optionally, the grid division of the mask layout according to the photomask data comprises:

[0013] The mask layout is divided according to the photomask data to form a non-uniform grid, so that the load of the layout area corresponding to each grid is the same.

[0014] Optionally, the target density comprises the mean value of the layout density corresponding to each grid.

[0015] Optionally, determining a virtual pattern corresponding to each grid according to the density difference value comprises:

[0016] When the density difference value is less than a first threshold value, the virtual pattern corresponding to the grid is determined to be a straight line pattern;

[0017] When the density difference value is not less than the first threshold value and less than a second threshold value, the virtual pattern corresponding to the grid is determined to be an L pattern;

[0018] When the density difference value is not less than the second threshold value, the virtual pattern corresponding to the grid is determined to be a cross pattern.

[0019] Optionally, adding a corresponding virtual pattern to the layout area corresponding to the grid comprises:

[0020] The distance value of the virtual pattern from a main pattern in the corresponding layout area is determined according to the density difference value; the distance value is negatively correlated with the density difference value;

[0021] The virtual pattern is added to a position at the distance value from the main pattern.

[0022] Optionally, determining the distance value of the virtual pattern from a main pattern in the corresponding layout area according to the density difference value comprises:

[0023] The distance value is calculated according to the distance formula S=5-0.5|Δρ|; S is the distance value, and Δρ is the density difference value.

[0024] Optionally, after the grid division of the mask layout, the method further comprises:

[0025] A main direction of the layout area corresponding to each grid is determined;

[0026] adding corresponding virtual patterns in the layout area corresponding to the grid to form a compensated mask layout.

[0027] adding corresponding virtual patterns in the layout area corresponding to the grid to form a compensated mask layout according to the main direction.

[0028] The application further provides a layout generation device for load effect compensation, comprising:

[0029] an acquisition module for acquiring photomask data;

[0030] a grid module for performing grid division on a mask layout according to the photomask data and determining layout density in each grid;

[0031] a density difference module for comparing the layout density of each grid with a target density and determining a density difference value corresponding to each grid;

[0032] a virtual pattern module for determining a virtual pattern corresponding to each grid according to the density difference value;

[0033] a compensation module for adding corresponding virtual patterns in the layout area corresponding to the grid to form a compensated mask layout.

[0034] The application further provides a layout generation device for load effect compensation, comprising:

[0035] a memory for storing a computer program;

[0036] a processor for executing the computer program to realize the steps of the layout generation method for load effect compensation according to any one of the above.

[0037] The application further provides a computer readable storage medium, wherein the computer readable storage medium stores a computer program, and the computer program is executed by a processor to realize the steps of the layout generation method for load effect compensation according to any one of the above.

[0038] The application provides a layout generation method for load effect compensation, comprising: acquiring photomask data; performing grid division on a mask layout according to the photomask data and determining layout density in each grid; comparing the layout density of each grid with a target density and determining a density difference value corresponding to each grid; determining a virtual pattern corresponding to each grid according to the density difference value; and adding corresponding virtual patterns in the layout area corresponding to the grid to form a compensated mask layout.

[0039] By grid division on the mask layout, the specific layout density in each grid is calculated, and according to the difference between the layout density and the target density, corresponding virtual graphics are added to the layout area corresponding to the grid, which can effectively compensate the graphic density of the layout area in each grid, thereby balancing the load effect of each area in the layout and improving the etching uniformity.

[0040] The application also provides a layout generation device for load effect compensation, a layout generation equipment for load effect compensation and a computer readable storage medium, which also have the above beneficial effects, which will not be repeated here. BRIEF DESCRIPTION OF DRAWINGS

[0041] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiment or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0042] Figure 1 The flow chart of a specific layout generation method for load effect compensation provided by the embodiment of the present application;

[0043] Figure 2 The flow chart of a specific layout generation method for load effect compensation provided by the embodiment of the present application;

[0044] Figure 3 The direction diagram of virtual graphics and main graphics;

[0045] Figure 4 The CD deviation and etching topography roughness comparison diagram before and after virtual graphics compensation;

[0046] Figure 5 The structure block diagram of a layout generation device for load effect compensation provided by the embodiment of the present application;

[0047] Figure 6 The structure block diagram of a layout generation equipment for load effect compensation provided by the embodiment of the present application. DETAILED DESCRIPTION

[0048] The core of the present application is to provide a layout generation method for load effect compensation. In the prior art, the limitations of the scheme for improving the load effect include: first, only global optimization can be performed, and it is difficult to accurately compensate the load effect caused by local density variation; second, only macroscopic density can be balanced, and micro load effect caused by complex layout cannot be adaptively eliminated; third, sub-resolution auxiliary graphics are specifically used for correcting optical proximity effect, which is essentially different from solving the problem of etching uniformity.

[0049] The method for layout generation for load effect compensation provided by the application comprises the following steps: obtaining photomask data; performing grid division on a mask layout according to the photomask data, and determining the layout density in each grid; comparing the layout density of each grid with a target density to determine the density difference corresponding to each grid; determining the virtual pattern corresponding to each grid according to the density difference; and adding the corresponding virtual pattern to the layout area corresponding to the grid to form a compensated mask layout.

[0050] By performing grid division on the mask layout, calculating the specific layout density in each grid, and adding the corresponding virtual pattern to the layout area corresponding to the grid according to the difference between the layout density and the target density, the pattern density of the layout area in each grid can be effectively compensated, thereby balancing the load effect of each area in the layout and improving the etching uniformity.

[0051] In order for those skilled in the art to better understand the present application, the application will be further described in detail below with reference to the drawings and specific embodiments. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0052] Embodiment one

[0053] Reference is made to Figure 1 , Figure 1 The flow chart of the method for layout generation for load effect compensation provided by the embodiment of the present application is shown in FIG. 1.

[0054] Reference is made to Figure 1 In this embodiment, the method for layout generation for load effect compensation comprises the following steps:

[0055] S101: Obtain photomask data.

[0056] In this embodiment, the photomask data represents the specific topography structure of the mask layout, and the specific pattern topography of each area of the mask layout can be determined through the photomask data. The specific content of the photomask data can be set according to the actual situation, which is not limited here. In this step, the processor can obtain the photomask data by reading the data from the memory.

[0057] S102: Perform grid division on the mask layout according to the photomask data, and determine the layout density in each grid.

[0058] In this step, the mask pattern is divided into a grid, and the grid includes a part of the mask pattern.

[0059] The specific algorithm for the grid division can refer to the prior art, and is not specifically limited here. Specifically, the step can specifically include: dividing the mask pattern into a non-uniform grid according to the photomask data, so that the load of the mask pattern area corresponding to each grid is the same. That is, the mask pattern can be divided into a non-uniform grid with adaptive size; and the division standard of the non-uniform grid can be based on the load size in each grid, so that the load of the mask pattern area corresponding to each grid is the same. Based on this, the mask pattern density in each grid can be finally balanced, thereby reducing the load effect. The division of the non-uniform grid can be specifically based on the CAD data of the photomask pattern, and a grid division module is called to divide. In this embodiment, the grid size can be dynamically adjusted according to the local pattern density variation of the mask pattern, to ensure that the complexity of the pattern in the grid can be completely captured.

[0060] Of course, in this embodiment, the mask pattern can also be divided into a uniform grid or a non-uniform grid based on other standards, and is not specifically limited here.

[0061] The mask pattern area corresponding to the grid usually has a main pattern and a blank area, and in this step, the mask pattern density in each grid needs to be determined. Specifically, the mask pattern density in each grid can be determined by calculating the ratio of the area of the main pattern in the mask pattern area corresponding to the grid to the area of the corresponding grid, that is, (p) = area of main pattern in grid / area of corresponding grid.

[0062] S103: Compare the mask pattern density of each grid with the target density to determine the density difference value corresponding to each grid.

[0063] In this step, the target density is subtracted from the above mask pattern density, thereby determining the density difference value corresponding to each grid, that is, the density difference value (Ap) corresponding to each grid.

[0064] The density difference (Δρ) represents how much the layout density of the corresponding grid is away from the target density. The target density can be a preset constant value, or can include the average of the layout densities of the grids. That is, the target density used as the standard can be a constant value independent of the layout densities of the grids, or can be a value determined according to the layout densities of the grids. In this embodiment, the average of the layout densities of the grids can be determined as the target density. The reason for using the average instead of the maximum is that using the maximum of the layout densities of the grids as the target density will greatly increase the cost of the final mask layout, and will add too dense dummy patterns in the subsequent steps. It should be noted that in the subsequent steps, the embodiment will generally add dummy patterns to the grids with a layout density less than the target density to increase the layout density of the grids.

[0065] S104: determining the dummy pattern corresponding to each grid according to the density difference.

[0066] In this step, the specific dummy pattern structure corresponding to each grid needs to be determined according to the density difference (Δρ). The specific content will be described in detail in the following embodiments, and will not be described here.

[0067] S105: adding the corresponding dummy pattern to the layout area corresponding to the grid to form a compensated mask layout.

[0068] In this embodiment, dummy patterns are added to the grids with a lower layout density to increase the layout density, thereby reducing the load effect and improving the pattern fidelity and yield of the photomask. Therefore, in this step, the corresponding dummy pattern needs to be added to the layout area corresponding to the grid. The added mask layout is a compensated mask layout with a lower load effect.

[0069] The layout generation method for load effect compensation provided in this embodiment can effectively compensate for the pattern density of the layout area in each grid by dividing the mask layout into grids, calculating the specific layout density in each grid, and adding a corresponding dummy pattern to the layout area corresponding to the grid according to the difference between the layout density and the target density. This can balance the load effect of each region in the layout and improve the etching uniformity.

[0070] The specific content of the layout generation method for load effect compensation provided in this embodiment will be described in detail in the following embodiments.

[0071] Embodiment Two

[0072] Please refer to Figures 2 to 4 , Figure 2A flow chart of a specific layout generation method for load effect compensation provided by the embodiment of the present application is shown in the figure; Figure 3 A schematic diagram of a virtual pattern and a main pattern direction is shown in the figure. Figure 4 A comparison chart of CD deviation and etching profile roughness before and after virtual pattern compensation is shown in the figure.

[0073] Referring to Figure 2 In the embodiment, the layout generation method for load effect compensation comprises:

[0074] S201: Obtain photomask data.

[0075] S202: Perform grid division on the mask pattern based on the photomask data, and determine the layout density in each grid.

[0076] S203: Compare the layout density of each grid with the target density, and determine the density difference value corresponding to each grid.

[0077] The above S201 to S203 are basically the same as S101 to S103 in the above embodiment, and the details are described in the above embodiment, which will not be repeated here.

[0078] S204: When the density difference value is less than a first threshold value, determine that the virtual pattern corresponding to the grid is a straight line pattern.

[0079] When the density difference value (Δρ) is less than the first threshold value, it means that only a small degree of layout density correction is needed to achieve the effect of balancing the load effect. Since the area filled by the straight line pattern is the smallest and has the smallest density correction, when the density difference value (Δρ) is less than the first threshold value, it is determined that the virtual pattern needed to be supplemented in the grid is a straight line pattern.

[0080] Specifically, the first threshold value can be 5%, so this step can specifically include: when the density difference value (Δρ) is less than 5%, determining that the virtual pattern corresponding to the grid is a straight line pattern.

[0081] S205: When the density difference value is not less than the first threshold value and less than a second threshold value, determine that the virtual pattern corresponding to the grid is an L pattern.

[0082] When the density difference value (Δρ) is not less than the first threshold value and less than the second threshold value, it means that a moderate degree of layout density correction is needed to achieve the effect of balancing the load effect. Since the L pattern can take into account two directions, its filled area is moderate, and it has moderate density correction, so when the density difference value (Δρ) is not less than the first threshold value and less than the second threshold value, it is determined that the virtual pattern needed to be supplemented in the grid is an L pattern.

[0083] Specifically, the second threshold value can be 10%, and thus the step can specifically include: when the density difference value (Δρ) is not less than 5% and less than 10%, determining that the virtual graph corresponding to the grid is an L-shaped graph.

[0084] S206: when the density difference value is not less than the second threshold value, determining that the virtual graph corresponding to the grid is a cross-shaped graph.

[0085] When the density difference value (Δρ) is not less than the second threshold value, it means that the maximum layout density correction is needed to achieve the effect of balancing the load. Since the cross-shaped graph can be expanded in four directions uniformly, it has the largest area filled and the largest density correction, and thus when the density difference value (Δρ) is not less than the second threshold value, it is determined that the virtual graph that needs to be supplemented for the grid is a cross-shaped graph.

[0086] Specifically, the step can specifically include: when the density difference value (Δρ) is not less than 10%, determining that the virtual graph corresponding to the grid is a cross-shaped graph. Of course, in the embodiment, the first threshold value can also be set to a value other than 5%, and the second threshold value can also be set to a value other than 10%, which is not limited herein.

[0087] S207: determining a distance value of the virtual graph from the main graph in the corresponding layout area according to the density difference value.

[0088] In the embodiment, the distance value S is negatively correlated with the density difference value (Δρ). When the added virtual graph is closer to the main graph, the layout density of the grid can be relatively increased, and thus in order to make the filled virtual graph more accurately improve the layout density of the grid, in the step, the distance value S of the virtual graph from the main graph in the corresponding layout area is calculated, so that the virtual graph is added to a preset position near the main graph to improve the layout density of the corresponding layout area. The distance value S is negatively correlated with the density difference value (Δρ), which means that the larger the density difference value (Δρ) is, the lower the layout density of the layout area in the grid is, and the virtual graph needs to be set at a position closer to the main graph to increase the layout density. Conversely, the smaller the density difference value (Δρ) is, the higher the layout density of the layout area in the grid is, and the virtual graph needs to be set at a position farther from the main graph to increase the layout density.

[0089] Specifically, the step can include: calculating the distance value according to a distance formula S=5-0.5|Δρ|; S is the distance value, and Δρ is the density difference value. In the distance formula, the distance value S is inversely proportional to the density difference value Δρ, and the distance value S can be simply and directly calculated based on the distance formula.

[0090] S208: adding the virtual graph to a position at a distance of the distance value from the main graph.

[0091] In this step, a virtual pattern is added based on the distance value, so that the distance between the virtual pattern and the main pattern is the distance value, to ensure that the layout density of the grid is accurately improved.

[0092] Specifically, after S202 in this embodiment, the main direction of the layout area corresponding to each grid can be further determined. The main direction is the direction in which the main pattern mainly extends in the corresponding layout area, and is determined by the angle distribution of the etching pattern. The calculation formula is: W = åAi sin(2q_i) / åAi, where W is the main direction, Ai is the area of a single pattern in the layout area, and q_i is the local direction angle of the pattern. In this embodiment, if the calculated main direction deviates from the main grid direction of the mask layout by more than 45°, it is classified as 45°.

[0093] Correspondingly, this step can specifically include: adding a corresponding virtual pattern in the layout area corresponding to the grid according to the main direction to form a compensated mask layout. In this embodiment, the direction of the virtual pattern can be set to have a preset included angle with the main direction of the main pattern in the corresponding grid, so that the virtual pattern can better balance the load effect.

[0094] Specifically, as shown in Figure 3 In this embodiment, the direction of the virtual pattern can be set to have an included angle of not greater than 15° with the main direction of the main pattern in the corresponding grid, i.e., the value of the preset included angle is not greater than 15°, so that the virtual pattern can better balance the load effect. Of course, the specific value of the preset included angle is not specifically limited in this embodiment, but is determined according to the specific situation.

[0095] After this step, the layout data of the generated compensated mask layout can be output in GDSII format for manufacturing of a photomask. Subsequently, the compensation effect of the virtual pattern on the load effect can be verified through simulation or experiment, to ensure that the critical dimension deviation of the etched pattern is controlled within the expected range.

[0096] Referring to Figure 4 , where the sparse area is the area with the smallest density in the mask layout, the dense area is the area with the largest density in the mask layout, and the transition area is the area between the two. The compensated mask layout generated based on the layout generation method for load effect compensation provided in this embodiment can effectively reduce the roughness of the etched metal layer and reduce the CD deviation in different areas of the metal layer.

[0097] The layout generation method for load effect compensation provided in this embodiment accurately compensates for the load effect in photomask etching through non-uniform grid division, local density analysis, and adaptive virtual pattern dynamic generation.

[0098] Example 3

[0099] The following describes a layout generation apparatus for load effect compensation provided by an embodiment of the present invention. The layout generation apparatus for load effect compensation described below can be referred to in correspondence with the layout generation method for load effect compensation described above.

[0100] Please refer to Figure 5 , Figure 5 This is a structural block diagram of a layout generation apparatus for load effect compensation provided in an embodiment of the present invention. (Refer to...) Figure 5 The layout generation apparatus for load effect compensation may include:

[0101] Acquisition module 100 is used to acquire photomask data;

[0102] The grid module 200 is used to divide the photomask pattern into grids according to the photomask data and determine the pattern density in each grid.

[0103] The density difference module 300 is used to compare the layout density of each grid with the target density to determine the density difference value corresponding to each grid.

[0104] The virtual graphics module 400 is used to determine the virtual graphics corresponding to each grid based on the density difference.

[0105] The compensation module 500 is used to add corresponding virtual graphics to the layout area corresponding to the grid to form a compensated mask layout.

[0106] Preferably, in this embodiment of the invention, the mesh module 200 is specifically used for:

[0107] The photomask data is used to divide the photomask layout into a non-uniform grid, so that the load of the layout area corresponding to each grid is the same.

[0108] Preferably, in this embodiment of the invention, the target density includes the average of the layout densities corresponding to each of the grids.

[0109] Preferably, in this embodiment of the invention, the virtual graphics module 400 includes:

[0110] A straight-line graphic unit is used to determine that the virtual graphic corresponding to the grid is a straight-line graphic when the density difference is less than a first threshold.

[0111] The L-shaped graphic unit is used to determine the virtual graphic corresponding to the grid as an L-shaped graphic when the density difference is not less than a first threshold and less than a second threshold.

[0112] A cross-shaped graphic unit is used to determine that the virtual graphic corresponding to the grid is a cross-shaped graphic when the density difference is not less than a second threshold.

[0113] Preferably, in this embodiment of the invention, the compensation module 500 includes:

[0114] A distance unit is used to determine the distance between the virtual graphic and the main graphic in the corresponding map area based on the density difference; the distance value is negatively correlated with the density difference.

[0115] The compensation unit is used to add the virtual graphic to a position that is a distance value away from the main graphic.

[0116] Preferably, in this embodiment of the invention, the distance unit is specifically used for:

[0117] The distance value is calculated according to the distance formula S=5-0.5|Δρ|, where S is the distance value and Δρ is the density difference value.

[0118] Preferably, in this embodiment of the invention, it further includes:

[0119] Directional elements are used to determine the main direction of the layout area corresponding to each grid.

[0120] The compensation module 500 is specifically used for:

[0121] Based on the main direction, add corresponding virtual graphics to the layout area corresponding to the grid to form a compensated mask layout.

[0122] The layout generation apparatus for load effect compensation in this embodiment is used to implement the aforementioned layout generation method for load effect compensation. Therefore, the specific implementation of the layout generation apparatus for load effect compensation can be found in the embodiment section of the layout generation method for load effect compensation above. For example, the acquisition module 100, the mesh module 200, the density difference module 300, the virtual graphics module 400, and the compensation module 500 are respectively used to implement steps S101 to S105 in the above-mentioned layout generation method for load effect compensation. Therefore, its specific implementation can be referred to the description of the corresponding embodiments, which will not be repeated here.

[0123] Example 4

[0124] The following describes a layout generation device for load effect compensation provided by an embodiment of the present invention. The layout generation device for load effect compensation described below can be referred to in correspondence with the layout generation method and layout generation apparatus for load effect compensation described above.

[0125] Please refer to Figure 6 ,Figure 6 This is a structural block diagram of a layout generation device for load effect compensation provided in an embodiment of the present invention.

[0126] Reference Figure 6 The layout generation device for load effect compensation may include a processor 11 and a memory 12.

[0127] The memory 12 is used to store computer programs; the processor 11 is used to execute the computer programs to implement the specific content of the layout generation method for load effect compensation described in the above embodiments of the invention.

[0128] In this embodiment of the layout generation device for load effect compensation, the processor 11 is used to install the layout generation apparatus for load effect compensation described in the above-described embodiments. Simultaneously, the processor 11, combined with the memory 12, can implement the layout generation method for load effect compensation described in any of the above-described embodiments. Therefore, the specific implementation of the layout generation device for load effect compensation can be found in the embodiments section of the layout generation method for load effect compensation described above. The specific implementation can be referred to the descriptions of the corresponding embodiments, and will not be repeated here.

[0129] Example 5

[0130] The present invention also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements a layout generation method for load effect compensation as described in any of the above embodiments. Further details can be found in the prior art and will not be elaborated upon here.

[0131] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section.

[0132] Those skilled in the art will further recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0133] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein can be implemented directly by hardware, a software module executed by a processor, or a combination of both. The software module can be located in random access memory (RAM), main memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art.

[0134] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0135] The layout generation method and related apparatus for load effect compensation provided by this invention have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this invention. It should be noted that those skilled in the art can make several improvements and modifications to this invention without departing from the principles of this invention, and these improvements and modifications also fall within the protection scope of the claims of this invention.

Claims

1. A layout generation method for load effect compensation, characterized in that, include: Obtain photomask data; The photomask pattern is divided into grids based on the photomask data, and the pattern density in each grid is determined. The density of each grid is compared with the target density to determine the density difference between each grid. The virtual graphic corresponding to each grid is determined based on the density difference value; Add corresponding virtual graphics to the layout area corresponding to the grid to form a compensated mask layout.

2. The method according to claim 1, characterized in that, The meshing of the photomask pattern based on the photomask data includes: The photomask data is used to divide the photomask layout into a non-uniform grid, so that the load of the layout area corresponding to each grid is the same.

3. The method according to claim 1, characterized in that, The target density includes the average of the layout density corresponding to each of the grids.

4. The method according to claim 1, characterized in that, Determining the virtual graphics corresponding to each grid based on the density difference includes: When the density difference is less than the first threshold, the virtual graphic corresponding to the grid is determined to be a straight line graphic; When the density difference is not less than the first threshold and less than the second threshold, the virtual graphic corresponding to the grid is determined to be an L-shaped graphic; When the density difference is not less than the second threshold, the virtual graphic corresponding to the grid is determined to be a cross shape.

5. The method according to claim 4, characterized in that, Adding corresponding virtual graphics to the layout area corresponding to the grid includes: The distance between the virtual graphic and the main graphic in the corresponding map area is determined based on the density difference; the distance value is negatively correlated with the density difference. Add the virtual graphic to a position that is at a distance from the main graphic by the specified distance value.

6. The method according to claim 5, characterized in that, Determining the distance between the virtual graphic and the main graphic in the corresponding map area based on the density difference includes: The distance value is calculated according to the distance formula S=5-0.5|Δρ|, where S is the distance value and Δρ is the density difference value.

7. The method according to claim 1, characterized in that, After meshing the mask pattern, the following steps are also included: Determine the main direction of the map area corresponding to each grid; Adding corresponding virtual graphics to the layout area corresponding to the grid to form the compensated mask layout includes: Based on the main direction, add corresponding virtual graphics to the layout area corresponding to the grid to form a compensated mask layout.

8. A layout generation apparatus for load effect compensation, characterized in that, include: The acquisition module is used to acquire photomask data; The grid module is used to divide the photomask pattern into grids based on the photomask data and determine the pattern density in each grid. The density difference module is used to compare the layout density of each grid with the target density to determine the density difference value corresponding to each grid. A virtual graphics module is used to determine the virtual graphics corresponding to each grid based on the density difference. The compensation module is used to add corresponding virtual graphics to the layout area corresponding to the grid to form a compensated mask layout.

9. A layout generation device for load effect compensation, characterized in that, include: Memory, used to store computer programs; A processor for executing the computer program to implement the steps of the layout generation method for load effect compensation as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that is executed by a processor to implement the steps of the layout generation method for load effect compensation as described in any one of claims 1 to 7.

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