Infrared femtosecond and infrared nanosecond laser combined processing system and bionic processing method

Abstract

The invention provides an infrared femtosecond and infrared nanosecond laser combined machining system and a bionic machining method, and relates to the technical field of laser surface machining. According to the method, rapid rough machining and pre-structure construction are achieved through nanosecond laser, then fine modification and micro-nano structure regulation and control are conducted through femtosecond laser, the machining efficiency and the structure quality can be remarkably improved through the synergistic effect of the nanosecond laser and the femtosecond laser, meanwhile, the heat influence is reduced, high-precision and low-damage machining of the SiC surface is achieved, and the machining quality is improved. And a technical support is provided for constructing a surface structure with special functionality.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of laser surface processing, and particularly relates to a system and a bionic processing method for infrared femtosecond and infrared nanosecond laser combined processing. BACKGROUND

[0002] Silicon carbide (SiC) is a wide-bandgap semiconductor material with excellent physical and chemical properties, and has high thermal conductivity, high hardness, corrosion resistance and excellent mechanical strength, and is widely used in high-power electronic devices, aerospace, photovoltaic, precision machinery and other fields. With the development of new generation of high-performance devices, the requirements for the surface performance of SiC materials are increasing, especially in terms of heat dissipation efficiency, wettability, anti-pollution and interface bonding performance, higher preparation requirements are put forward.

[0003] However, SiC material has high hardness and brittleness, and traditional surface processing methods (such as chemical etching, sandblasting, mechanical polishing, etc.) have certain limitations in efficiency, accuracy and surface quality. For example, chemical etching has the problems of environmental pollution and low etching rate, mechanical processing is easy to cause surface damage and micro-cracks of the material, and it is difficult to realize fine and complex structure patterns. In addition, single laser type (such as nanosecond laser or femtosecond laser) also faces the problem of difficult to balance efficiency and quality when processing SiC surface: nanosecond laser has higher processing efficiency, but has larger heat-affected zone, which is easy to cause material melting and recasting phenomenon; femtosecond laser can realize high-precision non-thermal damage processing, but the processing speed is slow and the cost is high, which is difficult to meet the demand of large-area high-efficiency preparation. SUMMARY

[0004] In view of the above technical problems, the present application provides a system and a bionic processing method for infrared femtosecond and infrared nanosecond laser combined processing, which is used for constructing micro-nano structure with bionic characteristics on the surface of silicon carbide (SiC) material, so as to realize high-efficiency processing and excellent super-hydrophilic performance, and overcome the problems of low processing efficiency, large heat-affected zone and poor structure control precision in the prior art.

[0005] The first aspect of the present application discloses a system for infrared femtosecond and infrared nanosecond laser combined processing, which comprises: a general control platform, an infrared nanosecond laser, a first set of optical lenses, an infrared femtosecond laser, a second set of optical lenses, a beam adjusting device and an auxiliary displacement platform; wherein,

[0006] The general control platform comprises a bionic pattern generation module and an adjustment control module;

[0007] The bionic pattern generation module is used for generating a bionic pattern;

[0008] The adjustment control module is configured to coordinate the working timing and parameters of the infrared femtosecond laser and the infrared nanosecond laser, and to adjust the light beam adjusting device according to the biomimetic pattern, so that the laser beam output by the light beam adjusting device processes the surface of the SiC target material fixed on the auxiliary displacement platform according to the set scanning path.

[0009] The infrared nanosecond laser is configured to output a nanosecond-level infrared waveband laser beam, and transmit the laser beam to the light beam adjusting device after the laser beam is adjusted by the first set of optical lenses.

[0010] The infrared femtosecond laser is configured to output a femtosecond-level infrared waveband laser beam, and transmit the laser beam to the light beam adjusting device after the laser beam is adjusted by the second set of optical lenses.

[0011] In the working state of the system, the adjustment control module first starts the infrared nanosecond laser, adjusts the light beam adjusting device according to the biomimetic pattern, so that the laser beam output by the light beam adjusting device processes the surface of the SiC target material according to the set scanning path to form a micron-level structure feature, and then starts the infrared femtosecond laser and adjusts the light beam adjusting device according to the biomimetic pattern, so that the laser beam output by the light beam adjusting device processes the surface of the SiC target material according to the set scanning path to finely modify and micro-nano structure control, and obtain a biomimetic micro-nano composite structure.

[0012] Optionally, the light beam adjusting device comprises a scanning galvanometer and a field lens; the scanning galvanometer is configured to adjust the scanning path of the laser beam on the surface of the SiC target material, and the field lens is configured to adjust the focusing position of the laser beam.

[0013] Optionally, the energy density of the infrared nanosecond laser is 0.1 J / cm 2 -2 J / cm 2 ; and the energy density of the infrared femtosecond laser is 1 J / cm 2 -10 J / cm 2 .

[0014] Optionally, the first set of optical lenses comprises a beam expander, a polarizer, a dichroic mirror, a second full mirror and a third full mirror; wherein,

[0015] The nanosecond-level infrared waveband laser beam is transmitted to the light beam adjusting device after sequentially passing through the beam expander, the polarizer, the dichroic mirror, the second full mirror and the third full mirror.

[0016] Optionally, the second set of optical lenses comprises a first full mirror, a dichroic mirror, a second full mirror and a third full mirror; wherein,

[0017] The femtosecond-level infrared waveband laser beam is transmitted to the light beam adjusting device after sequentially passing through the first full mirror, the dichroic mirror, the second full mirror and the third full mirror.

[0018] Optionally, the system further comprises a power monitoring device for periodically monitoring the laser power output by the infrared nanosecond laser and the infrared femtosecond laser. Optionally, the power monitoring device comprises a test total reflection mirror and an energy meter.

[0019] Optionally, the system further comprises a topography detection device for real-time detection of the topography and quality of the surface of the feedback SiC target material; and an adjustment control module for obtaining the topography and quality of the surface of the SiC target material, and then coordinating the working timing and parameters of the infrared femtosecond laser and the infrared nanosecond laser according to the obtained results. Optionally, the topography detection device comprises an optical microscope or a surface profiler for real-time feedback of the topography data of the processed surface.

[0020] The second aspect of the present application discloses a bionic processing method realized by a system for combined processing of infrared femtosecond and infrared nanosecond lasers, the method being realized by the system for combined processing of infrared femtosecond and infrared nanosecond lasers, and the method comprising:

[0021] S1, generating a bionic pattern by a bionic pattern generation module;

[0022] S2, controlling the infrared nanosecond laser to start by an adjustment control module, and adjusting the light beam adjusting device according to the bionic pattern, so that the laser beam output by the light beam adjusting device is processed on the surface of the SiC target material according to the set scanning path to form a microstructure feature;

[0023] S3, controlling the infrared femtosecond laser to start by the adjustment control module, and adjusting the light beam adjusting device according to the bionic pattern, so that the laser beam output by the light beam adjusting device is finely modified and micro-nano structure regulated on the surface of the SiC target material according to the set scanning path to obtain a bionic micro-nano composite structure.

[0024] Optionally, the method further comprises:

[0025] Periodically monitoring the laser power output by the infrared nanosecond laser and the infrared femtosecond laser, and feeding back to the adjustment control module to adjust the working parameters of the infrared femtosecond laser and the infrared nanosecond laser.

[0026] Optionally, the method further comprises:

[0027] Real-time detection of the topography and quality of the surface of the SiC target material; and feeding back to the adjustment control module to coordinate the working timing and parameters of the infrared femtosecond laser and the infrared nanosecond laser according to the obtained results.

[0028] In summary, the scheme provided in the application has the following technical effects: the multi-system laser processing strategy combining infrared nanosecond laser and infrared femtosecond laser becomes a promising solution. The method realizes rapid rough machining and pre-structure construction by nanosecond laser, and then utilizes femtosecond laser for fine modification and micro-nano structure regulation. The synergistic effect of the two can significantly improve the processing efficiency and structure quality, while reducing the thermal influence, realizing high-precision and low-damage processing of the SiC surface, and providing technical support for constructing surface structures with special functionality. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the specific embodiments or prior art of the present application, the drawings needed in the specific embodiments or prior art description will be briefly introduced as follows. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0030] Figure 1 The system structure schematic diagram of the infrared femtosecond and infrared nanosecond laser combined processing of the embodiment of the present application is shown in the figure.

[0031] Figure 2 The laser scanning path setting schematic diagram of the embodiment of the present application is shown in the figure.

[0032] Figure 3 The two-dimensional surface morphology change schematic diagram of silicon nitride under different infrared femtosecond laser energy density conditions of the embodiment of the present application is shown in the figure.

[0033] Figure 4 The three-dimensional surface morphology change schematic diagram of silicon nitride under different infrared femtosecond laser energy density conditions of the embodiment of the present application is shown in the figure.

[0034] Figure 5 (a) and (b) are respectively the surface roughness and surface line roughness change curve diagrams of silicon nitride under different infrared femtosecond laser energy density conditions of the embodiment of the present application.

[0035] Figure 6 The removal depth schematic diagram of silicon nitride under different infrared femtosecond laser energy density conditions of the embodiment of the present application is shown in the figure.

[0036] Figure 7 The water contact test result schematic diagram of the surface of silicon nitride under different infrared femtosecond laser energy density conditions of the embodiment of the present application is shown in the figure. DETAILED DESCRIPTION

[0037] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0038] In recent years, biomimetic surface technology has been widely studied and concerned. By simulating the surface topography with special functions in nature (such as the superhydrophobicity of lotus leaves, the water-locking property of rose petals, and the anti-attachment property of shark skin), a micro-nano composite structure is constructed on the surface of the material to realize the regulation of surface properties such as wettability, friction, and optical performance. The introduction of biomimetic micro-nano structure in SiC material can not only improve the surface superhydrophilic property, but also improve the interface bonding ability, anti-pollution ability and cooling liquid wettability, which is of great significance to the thermal management of high-power devices and biomedical applications.

[0039] At present, there is still a lack of a processing method with high efficiency, high precision, low heat effect and controllable structure construction ability, which can realize high-quality biomimetic micro-nano structure preparation on the surface of SiC and obtain excellent superhydrophilic property. Therefore, it is of great theoretical significance and application value to develop a multi-body laser biomimetic processing method based on infrared nanosecond and infrared femtosecond laser combination. The present application provides an infrared femtosecond and infrared nanosecond laser combined processing system and a biomimetic processing method, which is used for constructing biomimetic micro-nano structure on the surface of silicon carbide (SiC) material, realizing efficient preparation and obtaining superhydrophilic surface treatment technology. The present application can be widely applied to semiconductor device heat dissipation, solar absorber, biomedical materials, microfluidic chip and other application scenarios with special requirements for surface wettability.

[0040] Equipment:

[0041] 1. The total control platform is a computer matched with a gold orange board card produced by XX company and the corresponding control software provided by the board card.

[0042] 2. The infrared femtosecond laser is purchased from XX company, and the product number is: CG-FA-17.

[0043] 3. The infrared nanosecond laser is purchased from XX company, and the product number is: PMYNFL-100-1-S-A.

[0044] 4. The energy meter is purchased from XX company, and the product number is: 30A-BB-18.

[0045] 5. The scanning galvanometer in the beam adjustment device was purchased from XX Company, product number: PSH20; the field lens was purchased from XX Company, product model: NJSL-427SL-355-110-160Q-D12.

[0046] 6. The flue gas purification device is a small desktop purifier purchased from XX company.

[0047] 7. The auxiliary displacement platform was purchased from XX Company.

[0048] This invention provides a composite processing system combining a flat-top laser and room-temperature plasma, such as... Figure 1 As shown, the system consists of a central control platform 1, an infrared nanosecond laser 2, a first total reflection mirror 3, an energy meter 4, a beam expander 5, a polarizer 6, an infrared femtosecond laser 7, a second total reflection mirror 8, an energy meter 9, a first total reflection mirror 10, a dichroic mirror 11, a second total reflection mirror 12, a third total reflection mirror 13, a beam adjustment device 14, a flue gas purification device 15, and an auxiliary displacement platform 16.

[0049] The energy meter 4 is equipped with a first probe 41;

[0050] The energy meter 9 is equipped with a second probe 91;

[0051] The central control platform 1 is connected to the infrared nanosecond laser 2 and the infrared femtosecond laser 7;

[0052] The first total reflection mirror 3 is detachably installed in the laser light path emitted by the infrared nanosecond laser 2. The mirror surface of the first total reflection mirror 3 is tilted at 45° towards the infrared nanosecond laser 2. The first probe 41 of the energy meter 4 is installed in the light path of the laser emitted by the infrared nanosecond laser 2 after being reflected by the first total reflection mirror 3, so that the first probe 41 receives the energy signal of the laser emitted by the infrared nanosecond laser 2.

[0053] In the laser beam path emitted by the infrared nanosecond laser 2, the beam expander 5, the polarizer 6, the dichroic mirror 10, and the second dichroic mirror 10 are sequentially arranged behind the first total reflection mirror 3. The mirror surfaces of the second dichroic mirror 10 are tilted at 45° toward the infrared nanosecond laser 2.

[0054] The first total reflection mirror 8 is detachably mounted on the laser beam path emitted by the infrared femtosecond laser 7, and the mirror surface of the first total reflection mirror 8 is tilted at 45° towards the infrared femtosecond laser 7; the second probe 91 of the energy meter 9 is mounted on the laser beam path reflected by the first total reflection mirror 8 after being emitted by the infrared femtosecond laser 7, so that the second probe 91 receives the energy signal of the laser beam emitted by the infrared femtosecond laser 7;

[0055] The mirror surface of the first total reflection mirror 10 is tilted at 45° toward the infrared femtosecond laser 7;

[0056] The infrared femtosecond laser 7 beam is incident to the dichroic mirror 11 through the mirror surface of the first total reflection mirror 10 and combined with the infrared nanosecond laser;

[0057] The mirror surface of the second total reflection mirror 12 is inclined at 45° to the combined light;

[0058] The third total reflection mirror 13 is arranged on the reflection light path of the second total reflection mirror 12, and the mirror surface of the third total reflection mirror 13 is opposite and parallel to the mirror surface of the second total reflection mirror 10;

[0059] The beam adjustment device 14 and the auxiliary displacement platform 13 are arranged on the reflection light path of the third total reflection mirror 13;

[0060] The beam adjustment device 14 includes a scanning galvanometer and a field lens located on the reflection light path of the third total reflection mirror 13;

[0061] The auxiliary displacement platform 16 is used to fix the target material, and the target material receives the irradiation of the laser passing through the field lens 132;

[0062] The auxiliary displacement platform 16 for fixing the target material is provided with a flue gas purification device 15 on one side;

[0063] The output power of the infrared nanosecond laser is 5-30W, the frequency of the laser emitted by the infrared femtosecond laser is 200-1000kHz, and the spot diameter is 20-70μm. In the experiment, after determining the output power of the infrared nanosecond laser, the infrared nanosecond laser power is fixed.

[0064] The total control platform is a computer or a tablet computer.

[0065] Embodiment 1

[0066] 1) The surface of the target material is cleaned by ultrasonic wave, and then the target material to be processed is fixed on the auxiliary displacement platform;

[0067] 2) Adjust the working position of the infrared nanosecond laser, turn on the laser indicator light of the infrared nanosecond laser, so that the laser emitted by the infrared nanosecond laser irradiates the first test total reflection mirror and is reflected to the first detection head, and the laser signal is collected by the energy meter to measure the laser power;

[0068] 3) disassemble the first test full mirror, so that the infrared nanosecond laser emits laser through the beam expander, and the spot after the beam expansion is vertically incident into the polarizer; wherein the polarizer can filter stray light or non-ideal polarization component, and improve the purity of the laser beam. And during nanosecond laser processing, the polarizer can reduce the plasma shielding effect on the material surface by adjusting the polarization direction, thereby reducing heat diffusion and remelting phenomenon. In addition, the polarization direction can be used to induce periodic nanotexture on the surface (such as laser-induced periodic surface structure, LIPSS), which can improve the uniformity and functionality of the super-hydrophilic structure. Optionally, the polarizer module is rotatable, and the laser polarization direction is controlled by the polarizer to induce the formation of biomimetic micro-nano structure with directional characteristics.

[0069] 4) the spot incident into the polarizer is divided into two polarized lights, one of which continues to be vertically incident into the dichroic mirror; the dichroic mirror combines the infrared femtosecond laser (such as 1030nm) and the infrared nanosecond laser (such as 1064nm or similar wavelength) into coaxial light path, ensuring that the two lasers are accurately focused on the same processing area.

[0070] 5) adjust the working position of the infrared femtosecond laser, turn on the laser indicator of the infrared femtosecond laser, so that the laser emitted by the infrared femtosecond laser irradiates the second test full mirror and is reflected to the second probe head, and the laser signal is collected by the second energy meter to measure the laser power;

[0071] 6) disassemble the second test full mirror, so that the laser emitted by the infrared femtosecond laser is reflected to the dichroic mirror through the full mirror, and the laser emitted by the infrared nanosecond laser realizes beam integration with the two lasers at the dichroic mirror; through regular power monitoring, the uniformity difference of the biomimetic structure (such as hexagonal micro-nano morphology) caused by the performance fluctuation of the laser is avoided, especially in the processing of super-hydrophilic surface, the laser energy density directly affects the surface roughness (Ra / Sa) and removal depth, which needs to be strictly monitored.

[0072] 7) the laser passes through the scanning galvanometer and field lens in the beam adjusting device, and the output indicating light irradiates on the target material surface, the beam adjusting device is controlled and adjusted by the total control platform, the light path is accurately focused, so that the spot brightness on the target material is maximum; then observe whether the light beam and the beam adjusting device appear to be polarized or leak light, and ensure that there is no polarization or light leakage, then turn off the infrared femtosecond laser, complete the preparation work of the laser;

[0073] 8) Set the infrared nanosecond laser parameters: laser output wavelength 1064 nm, pulse width 500 ns, repetition frequency 100-2500 kHz, output power 1-100 W; spot diameter is 20-70 pm. And in the experiment, after determining the output power of the infrared nanosecond laser, the infrared nanosecond laser power is fixed. For example, set the infrared femtosecond laser parameters: laser output wavelength 1030 nm, pulse width 600 fs, repetition frequency 100-2000 kHz, output power 1-20 W, spot diameter is 20-70 pm.

[0074] 9) Adjust the laser beam irradiation on the target surface for processing and marking; at the same time, use the smoke purification system to absorb the smoke and mist generated during processing and marking, and use the total control platform to adjust the beam adjustment device.

[0075] 10) According to the set scanning path, the bionic processing is realized, as shown in Figure 2 .

[0076] 11) According to the analysis results of the total control platform, further feedback adjustment is carried out: steps 7) to 10) are repeated in order to achieve the best processing effect and the highest processing efficiency on the target surface.

[0077] The processed silicon carbide surface is characterized, wherein Figure 3 is the two-dimensional surface morphology change of silicon carbide under different infrared femtosecond laser energy density conditions, Figure 4 is the three-dimensional surface morphology change of silicon carbide under different infrared femtosecond laser energy density conditions, Figure 5 is the surface roughness of silicon carbide under different infrared femtosecond laser energy density conditions, Figure 6 is the removal depth of silicon carbide under different infrared femtosecond laser energy density conditions.

[0078] As shown in Figure 3 , by observing the two-dimensional surface morphology of silicon carbide under different infrared femtosecond laser energy density conditions, it is found that under low energy density laser processing, the surface of silicon carbide presents delicate microstructure and texture, leaving only superficial processing marks, enriching the level of the material surface. However, with the gradual increase of infrared femtosecond laser energy density, the processing effect shows a significant change, the processing path gradually becomes rough, the processing depth increases significantly, and the silicon carbide surface realizes the construction of hexagonal bionic morphology.

[0079] On this basis, the three-dimensional morphology of silicon carbide under different infrared femtosecond laser energy density conditions is further determined. As shown in Figure 4As shown, the laser-processed silicon carbide surface texture array exhibits a high degree of order, accompanied by well-defined crosslinked grooves. Notably, at an infrared femtosecond laser energy density of 1.18 J / cm2, the actual groove width formed is significantly smaller than the expected design width, which is attributed to the relatively mild laser etching at lower energy density, resulting in a more superficial depiction of the micro-texture groove. However, as the laser energy density increases, this limitation is gradually broken, and the morphology of the silicon carbide surface becomes increasingly deep, fully demonstrating the flexibility and precision of multi-system laser processing technology.

[0080] To determine the dynamic relationship between surface roughness and laser energy density, the surface roughness of silicon carbide treated by different infrared femtosecond laser energy densities was measured. As shown in Figure 5 As the laser energy density gradually increases, the roughness indicators Ra and Sa of the silicon carbide surface are significantly improved. Notably, when the energy density of the infrared femtosecond laser exceeds 7.08 J / cm2, the surface roughness of the silicon carbide achieves a breakthrough, with the increase rate of Ra and Sa both exceeding 1000%. This is because at this energy density, the penetration power of the infrared femtosecond laser is sufficient to create a texture on the material surface that is both rough and has deep grooves. This result fully corresponds to the result of successfully constructing a hexagonal biomorphic morphology using an infrared femtosecond laser at 7.08 J / cm 2 .

[0081] On the other hand, the hydrophilic properties of the silicon carbide surface after laser treatment can also significantly optimize the permeability of the glue, thereby ensuring the construction of a more secure mechanical connection interface. Figure 6 The ablation depth of the silicon carbide surface under different infrared femtosecond laser energy densities was analyzed. As the infrared femtosecond laser energy density gradually increases, the surface depth also shows a corresponding growth trend. In particular, when the laser energy density reaches 8.3 J / cm2, the treatment depth can significantly reach about 30 μm. Figure 7 The water contact angle of the silicon carbide surface under different infrared femtosecond laser energy densities was analyzed. As the infrared femtosecond laser energy density gradually increases, the water contact angle of the silicon carbide surface gradually decreases. In particular, when the laser energy density reaches 8.3 J / cm2, the water contact angle can significantly reach about 3.5°. Thus, after bonding the laser surface treated silicon carbide and the composite material, the tensile shear strength can be greatly improved.

[0082] As can be seen from the above embodiments, the present application provides a system and a bionic processing method for infrared femtosecond and infrared nanosecond laser combined processing. On the one hand, the present application realizes the pretreatment processing of the surface of SiC material, adopts infrared nanosecond laser to pretreat the surface of SiC material, and quickly constructs a primary microstructure. This stage has high processing efficiency and mainly forms microstructure features. Then, infrared femtosecond laser is adopted to finely modify the region processed by nanosecond laser. Through mechanisms such as local micro-melting reconstruction, non-thermal ablation and self-organizing structure formation, nanoscale structures are further constructed on the surface, and micro-nano composite structures are realized. On the other hand, the present application realizes the time coordination of infrared nanosecond laser and infrared femtosecond laser, realizes the ordered construction of structures of different scales, and takes into account the structural diversity, uniformity and precision. The bionic micro-nano structure surface formed by the present application shows significant super-hydrophilic performance, and the water contact angle can be less than 10°. At the same time, the structure has good structural stability and environmental adaptability. The method can realize the controllable adjustment of different structure morphologies by adjusting laser parameters (such as power, repetition frequency, scanning speed, etc.), and is suitable for SiC substrates of different specifications and shapes.

[0083] The above embodiments are only used to illustrate the technical solutions of the present application, but not to limit the same. Although the present application has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that the technical solutions recorded in the above embodiments can be modified, or some or all of the technical features can be replaced by equivalents, and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A system for combined infrared femtosecond and infrared nanosecond laser processing, characterized in that, The system includes: a central control platform, an infrared nanosecond laser, a first set of optical lenses, an infrared femtosecond laser, a second set of optical lenses, a beam adjustment device, and an auxiliary displacement platform; wherein: The overall control platform includes a biomimetic pattern generation module and an adjustment control module; The biomimetic pattern generation module is used to generate biomimetic patterns; The adjustment control module is used to coordinate the working timing and parameters of the infrared femtosecond laser and the infrared nanosecond laser. It is also used to adjust the beam adjustment device according to the biomimetic pattern so that the laser beam output by the beam adjustment device processes the surface of the SiC target material fixed on the auxiliary displacement platform according to the set scanning path. An infrared nanosecond laser is used to output a nanosecond-level infrared laser beam, which is then transmitted to a beam adjustment device after being adjusted by the first set of optical lenses. An infrared femtosecond laser is used to output a femtosecond-level infrared laser beam, which is then transmitted to a beam adjustment device after being adjusted by a second set of optical lenses. When the system is in operation, the control module first activates the infrared nanosecond laser and adjusts the beam adjustment device according to the biomimetic pattern so that the laser beam output by the beam adjustment device pre-processes the SiC target surface according to the set scanning path to form micron-level structural features. Then, the infrared femtosecond laser is activated, and the beam adjustment device is adjusted according to the biomimetic pattern so that the laser beam output by the beam adjustment device finely modifies and controls the micro-nano structure of the SiC target surface according to the set scanning path to obtain a biomimetic micro-nano composite structure.

2. The system according to claim 1, characterized in that, The beam adjustment device includes a scanning galvanometer and a field lens; the scanning galvanometer is used to adjust the scanning path of the laser beam on the SiC target surface, and the field lens is used to adjust the focusing position of the laser beam.

3. The system according to claim 2, characterized in that, The energy density of an infrared nanosecond laser is 0.1 J / cm². 2 -2 J / cm 2 The energy density of the infrared femtosecond laser is 1 J / cm². 2 -10 J / cm 2 .

4. The system according to claim 1, characterized in that, The first set of optical lenses includes: a beam expander, a polarizer, a dichroic mirror, a second total reflection mirror, and a third total reflection mirror; among them... The nanosecond-level infrared laser beam passes sequentially through a beam expander, a polarizer, a dichroic mirror, a second total reflection mirror, and a third total reflection mirror before being transmitted to the beam adjustment device.

5. The system according to claim 1, characterized in that, The second set of optical lenses includes: a first total reflection mirror, a dichroic mirror, a second total reflection mirror, and a third total reflection mirror; among which, The femtosecond infrared laser beam passes sequentially through the first total reflection mirror, the dichroic mirror, the second total reflection mirror, and the third total reflection mirror before being transmitted to the beam adjustment device.

6. The system according to claim 1, characterized in that, The system also includes a power monitoring device for periodically monitoring the laser power output by the infrared nanosecond laser and the infrared femtosecond laser.

7. The system according to claim 1, characterized in that, The system further includes: a morphology detection device, used to detect and provide feedback on the morphology and quality of the SiC target surface in real time, and to provide feedback to the adjustment control module; the adjustment control module acquires the morphology and quality of the SiC target surface, and then coordinates the working timing and parameters of the infrared femtosecond laser and the infrared nanosecond laser based on the acquired results.

8. A biomimetic processing method implemented using a system combining infrared femtosecond and infrared nanosecond lasers, characterized in that, The method is implemented using the infrared femtosecond and infrared nanosecond laser combined processing system as described in any one of claims 1-7, and the method includes: S1, generates biomimetic patterns through the biomimetic pattern generation module; S2, by adjusting the control module to start the infrared nanosecond laser, and adjusting the beam adjustment device according to the biomimetic pattern, so that the laser beam output by the beam adjustment device pre-processes the SiC target surface according to the set scanning path to form micron-level structural features; S3 controls the infrared femtosecond laser to start by adjusting the control module, and adjusts the beam adjustment device according to the biomimetic pattern so that the laser beam output by the beam adjustment device can perform fine modification and micro-nano structure control on the surface of SiC target material according to the set scanning path, so as to obtain a biomimetic micro-nano composite structure.

9. The method according to claim 8, characterized in that, The method further includes: The laser power output of the infrared nanosecond laser and the infrared femtosecond laser is monitored periodically and fed back to the adjustment control module to adjust the operating parameters of the infrared femtosecond laser and the infrared nanosecond laser.

10. The method according to claim 8, characterized in that, The method further includes: The morphology and quality of the SiC target surface are detected in real time and fed back to the adjustment and control module to coordinate the working timing and parameters of the infrared femtosecond laser and the infrared nanosecond laser based on the acquired results.

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