Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device and a preparation method thereof and a display device.The photoelectric device comprises a cathode, a modification layer, an electronic function layer and an anode which are arranged in a stacked mode, the material of the modification layer comprises amorphous oxide, and the material of the electronic function layer comprises N-type metal oxide. Through the arrangement of the modification layer, the corrosion of the electronic function layer to the cathode under the condition of long-time electrification can be reduced, and the conductive stability of the electronic function layer is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a photoelectric device, a preparation method thereof and a display device. BACKGROUND

[0002] N-type metal oxide is a kind of electronic material with semiconductor performance, which can be used to make semiconductor devices and integrated circuits. It has the advantages of good stability, high transparency, safety and non-toxicity, and is widely used as a film material for photoelectric devices. At present, N-type metal oxide is mainly prepared by solution method or sol-gel method, which leads to the existence of many oxygen-containing ligands on the surface, such as hydroxyl ligand. Under the condition of long-time power supply, these ligands are easy to cause corrosion to the cathode, reducing the stability of the device. SUMMARY

[0003] Therefore, the present application provides a photoelectric device, a preparation method thereof and a display device.

[0004] The embodiment of the present application is implemented as follows:

[0005] In a first aspect, the embodiment of the present application provides a photoelectric device, comprising a cathode, a modification layer, an electronic functional layer and an anode which are stacked, wherein the material of the modification layer comprises amorphous oxide, and the material of the electronic functional layer comprises N-type metal oxide.

[0006] In a second aspect, the embodiment of the present application provides a method for preparing a photoelectric device, comprising the following steps:

[0007] providing a cathode, amorphous oxide and N-type metal oxide;

[0008] arranging the amorphous oxide on one side of the cathode to obtain a modification layer;

[0009] arranging the N-type metal oxide on the side of the modification layer away from the cathode to obtain an electronic functional layer;

[0010] arranging an anode on the side of the electronic functional layer away from the modification layer;

[0011] Alternatively,

[0012] providing an anode, amorphous oxide and N-type metal oxide;

[0013] arranging the N-type metal oxide on one side of the anode to obtain an electronic functional layer;

[0014] arranging the amorphous oxide on the side of the electronic functional layer away from the anode to obtain a modification layer;

[0015] arranging a cathode on the side of the modification layer away from the electronic functional layer.

[0016] Thirdly, embodiments of this application provide a display device, including the optoelectronic device described above, or the optoelectronic device prepared by the preparation method described above.

[0017] In the optoelectronic device provided by this application, by setting a modification layer, the corrosion of the cathode caused by the electronic functional layer under long-term power supply can be reduced, and the conductivity stability of the electronic functional layer can be improved. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application;

[0020] Figure 2 This is a schematic diagram of the structure of an optoelectronic device provided in another embodiment of this application;

[0021] Reference numerals: Optoelectronic device 100; Anode 10; Cathode 20; Optical functional layer 30; Hole transport layer 40; Hole injection layer 50; Modification layer 60; Electronic functional layer 70. Detailed Implementation

[0022] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" specifically refer to the drawing directions in the accompanying drawings. In addition, in the description of this application, the term "including" means "including but not limited to". Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and conciseness and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within that range. For example, it should be assumed that the description of a range from 1 to 6 specifically discloses subranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the range referred to.

[0023] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0024] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0025] In a first aspect, embodiments of this application propose an optoelectronic device 100, which includes, but is not limited to, organic light-emitting diodes, quantum dot light-emitting diodes, photovoltaic cells, and photodetectors, etc. Please refer to... Figure 1The optoelectronic device 100 includes a cathode 20, a modification layer 60, an electronic functional layer 70, and an anode 10 stacked together. The modification layer 60 is made of amorphous oxide, and the electronic functional layer 70 is made of N-type metal oxide. It can be understood that the optoelectronic device 100 can be a normally mounted device or an inverted device. When the optoelectronic device 100 is a normally mounted device, it includes an anode 10, an electronic functional layer 70, a modification layer 60, and a cathode 20 stacked sequentially from bottom to top. When the optoelectronic device 100 is an inverted device, it includes a cathode 20, a modification layer 60, an electronic functional layer 70, and an anode 10 stacked sequentially from bottom to top.

[0026] The surface of N-type metal oxide thin films prepared by solution method or sol-gel method has many defects, which can easily form electron trapping centers and exciton recombination centers, reducing the transport efficiency of the film. At the same time, there are a large number of oxygen-containing ligands on the material surface, which can easily react with the cathode 20, reduce the stability of the device, and affect the performance of the optoelectronic device 100.

[0027] In the optoelectronic device 100 proposed in this application, the modification layer 60 has fewer energy heterogeneous sites, lacks high-dimensional defects as migration channels for ions or atoms, and exhibits low fluctuations in local surface charge and a smooth surface potential. Overall, it displays high activation energy and uniformly distributed chemical potential characteristics, thereby kinetically suppressing the migration of elements from the cathode 20 to the electronic functional layer 70, inhibiting chemical reactions at the interface between the cathode 20 and the electronic functional layer 70, and reducing corrosion of the cathode 20 by the electronic functional layer 70 under prolonged energization. Simultaneously, the modification layer 60 and the electronic functional layer 70 can assemble to form a heterogeneous interface structure, effectively improving the conductivity stability of the electronic functional layer 70 and the interface contact quality between the electronic functional layer 70 and the cathode 20. This effectively enhances carrier transport efficiency, improves the balance between electrons and holes, and increases exciton recombination efficiency. The optoelectronic device 100 proposed in this application can exhibit better stability, longer service life, and higher current efficiency and external quantum efficiency.

[0028] In some embodiments, the ratio of the average thickness of the electronic functional layer 70 to the average thickness of the modification layer 60 is (30-50):(3-10); for example, the average thickness ratio can be 30:3, 30:5, 30:8, 30:10, 40:3, 40:5, 40:9, 40:10, 50:3, 50:5, 50:8, 50:10, etc. Controlling the average thickness ratio of the modification layer 60 and the electronic functional layer 70 within the range of (30-50):(3-10) can better leverage the heterojunction between the modification layer 60 and the electronic functional layer 70 to regulate electron injection and improve the carrier balance in the device. It is understood that the average thickness mentioned in this article can refer to the average thickness of the film at various locations. In actual testing, the film thickness can be detected by a step tester or an atomic force microscope. Specifically, several test areas can be selected on the film (for example, the four corners and the middle area of ​​the film can be selected), and the thickness values ​​of the several areas can be measured by an atomic force microscope. Then, the average of the several thickness values ​​can be calculated to obtain the average thickness.

[0029] In one specific embodiment, the average thickness of the electronic functional layer 70 is 30–50 nm; for example, it can be 30 nm, 32 nm, 35 nm, 38 nm, 40 nm, 41 nm, 43 nm, 45 nm, 47 nm, 50 nm, or any value between any two of the above. In other embodiments, the average thickness of the modification layer 60 is 3–10 nm; for example, it can be 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any value between any two of the above.

[0030] In some embodiments, the transmittance of the modification layer 60 is 74-90%; for example, it can be 74%, 76%, 80%, 83%, 85%, 86%, 87%, 88%, 89%, 90%, or any two of the above values. Transmittance characterizes the ability of the modification layer 60 to transmit visible light, specifically, it can be the percentage of light flux transmitted through the modification layer 60 relative to the incident light flux. In some embodiments, the transmittance can be measured using ultraviolet-visible absorption spectroscopy. Specifically, an ultraviolet-visible absorption spectrometer can be used to measure the modification layer 60, with the test spectral range set to 200-800 nm. Then, according to the Lambert-Beer law, the absorption spectral data is analyzed to calculate the transmittance of the film.

[0031] In some embodiments, the N-type metal oxide comprises one or more of undoped metal oxides and doped metal oxides; the undoped metal oxide comprises one or more of ZnO (zinc oxide), TiO2 (titanium oxide), SnO2 (tin oxide), Al2O3 (aluminum oxide), and Ga2O3 (gallium oxide); the doped metal oxide comprises a metal oxide and a first dopant element doped in the metal oxide; the metal oxide comprises one or more of ZnO, TiO2, SnO2, Al2O3, and Ga2O3; the first dopant element comprises one or more of Al, Mg, Li, In, and Ga. Taking Mg-doped ZnO as an example, the doped metal oxide can be ZnO. m Mg n O, where m and n can be any values ​​in the range of 0 to 1.

[0032] In some embodiments, when the N-type metal oxide is a doped metal oxide, the molar percentage of the first dopant element in the doped metal oxide is 0.1% to 10%; for example, it can be 0.1%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, or any value between any two of the above. Controlling the doping concentration of the first dopant element within this range helps to optimize the concentration of charge carriers (e.g., electrons) and improve device efficiency.

[0033] Amorphous oxides are amorphous semiconductor materials with good film-forming properties, wide band gaps, and high transmittance in the visible light range, and are commercially available. It is understood that an amorphous semiconductor refers to a solid substance in which internal particles (atoms, ions, or molecules) are arranged randomly in three-dimensional space. In some embodiments, the amorphous oxide includes one or more of undoped amorphous oxides and doped amorphous oxides; the undoped amorphous oxide includes zirconium oxide (ZrO). x Titanium oxide (TiO) x Hafnium oxide (HfO) x niobium oxide (NbO) x and tantalum oxide (TaO) x One or more of the following, wherein the doped amorphous oxide includes an amorphous oxide doped with a second doping element, and the amorphous oxide includes ZrO. x TiO x HfO x NbO x And TaO xOne or more of the following are doping elements: Li, Mg, Zn, Sn, Ga, In, and Al, wherein each occurrence of x is independently selected from any real number from 1 to 5. The aforementioned amorphous oxides possess good thermal and chemical stability, making them suitable for high-temperature, high-energy applications. They can adapt to heat treatment during the fabrication process of the optoelectronic device 100 and exhibit good light transmittance. When used as a material for the modification layer 60, they can reduce the absorption of visible light, facilitating light emission from the device. Furthermore, these materials possess excellent electron transport properties, effectively transporting electrons and promoting electron injection and transport in the optoelectronic device 100.

[0034] In some embodiments, when the amorphous oxide is a doped amorphous oxide, the doping concentration of the second dopant element in the doped amorphous oxide is 0.1% to 1%; for example, it can be 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, or any value between any two of the above. Controlling the doping concentration of the second dopant element within this range helps to reduce carrier injection barriers, improve electron or hole injection efficiency, and thus improve the overall performance of the device.

[0035] Please see Figure 2 The optoelectronic device 100 further includes a light functional layer 30, which is disposed between the electronic functional layer 70 and the anode 10. The light functional layer 30 can be a photoelectric conversion layer, such as a light-emitting layer that emits light when energized, or a light-absorbing layer that converts absorbed light into electricity. In some embodiments, the light functional layer 30 is a light-emitting layer, and based on this, the optoelectronic device 100 can be used as a light-emitting device. In some embodiments, the transmittance of the modification layer 60 is 74-90%, which has good transmittance and is beneficial for light emission from the device when the light-emitting layer emits light. The following will describe the process in detail using the light functional layer 30 as a light-emitting layer as an example.

[0036] In some embodiments, the material of the light-emitting layer may be a conventional light-emitting material in the art, such as an organic light-emitting material or a quantum dot light-emitting material. The organic light-emitting material is a material known in the art for use in organic light-emitting layers, and may be selected from, but is not limited to, one or more of diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives or fluorene derivatives, blue-emitting TBPe fluorescent materials, green-emitting TTPA fluorescent materials, orange-emitting TBRb fluorescent materials, and red-emitting DBP fluorescent materials. The quantum dot light-emitting material is a quantum dot known in the art for use in quantum dot light-emitting layers, such as one of red quantum dots, green quantum dots, and blue quantum dots.Quantum dots can be selected from, but are not limited to, one or more of single-structure quantum dots, core-shell quantum dots, and perovskite semiconductor materials. The shell of the core-shell quantum dot includes one or more layers. The material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot respectively include one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, and Cd. One or more of the following compounds: SeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include SnS, SnS e, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; the III-V compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs One or more of the following: AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the group I-III-VI compounds include one or more of CuInS2, CuInSe2, and AgInS2.As an example, the quantum dots with core-shell structure can be selected from but not limited to one or more of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS. It should be noted that for the materials of the aforementioned single-structure quantum dots, or the core materials of the core-shell structure quantum dots, or the shell materials of the core-shell structure quantum dots, the provided chemical formulas only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only represents being composed of three elements, Cd, Zn and Se. If the content of each element is to be represented, it corresponds to Cd. x Zn 1-x Se, where 0 < x < 1. The perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ion, M is a divalent metal cation, selected from one or more of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ , and X is a halogen anion, selected from one or more of Cl - , Br - , I - ; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2, M is a divalent metal cation, selected from one or more of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of them.

[0037] The anode 10 and the cathode 20 can be selected from common anodes 10 and 20 in the art. Specifically, the anode 10 and the cathode 20 can each be independently selected from, but not limited to, doped metal oxide particle electrodes, metal and metal oxide composite electrodes, graphene electrodes, carbon nanotube electrodes, metal electrodes, or alloy electrodes. The material of the doped metal oxide particle electrode is selected from indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. One or more of the following are used: the composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba. Wherein, " / " indicates a stacked structure; for example, the composite electrode AZO / Ag / AZO represents a three-layer stacked composite structure consisting of an AZO layer, an Ag layer, and an AZO layer.

[0038] In addition to the aforementioned film layers, in some embodiments, the optoelectronic device 100 may further include a hole functional layer located between the anode 10 and the electron functional layer 70. When the optoelectronic device 100 includes both an optical functional layer 30 and a hole functional layer, the optical functional layer 30 is located between the hole functional layer and the electron functional layer 70. In some embodiments, the hole functional layer includes one or both of a hole transport layer 40 and a hole injection layer 50, and when the hole functional layer includes both of the hole transport layer 40 and the hole injection layer 50, the hole injection layer 50 is disposed closer to the anode 10, and the hole transport layer 40 is disposed closer to the electron functional layer 70.

[0039] The material of hole transport layer 40 may include, but is not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (TFB), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4 4'-Diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), tris(3-methylphenylphenylamino)-triphenylamine (m-MTDATA), poly(p-phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PP) V), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS, poly(N-vinylcarbazole) (PVK), polymethacrylate, poly(9,9-octylfluorene), N,N'-di(naphthyl-1-yl)-N,N'-diphenylbenzidine (NPB), spiron NPB One or more types of materials may be used; the hole injection layer 50 may be made of one or more of the following: 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethyl ether, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

[0040] In some embodiments, in the optoelectronic device 100, the average thickness of the anode 10 can be 50-100 nm, the average thickness of the cathode 20 can be 60-100 nm, the average thickness of the optical functional layer 30 can be 20-60 nm, the average thickness of the hole injection layer 50 can be 20-50 nm, and the average thickness of the hole transport layer 40 can be 20-40 nm.

[0041] It is understood that the optoelectronic device 100 may also be provided with some functional layers that are conventionally used in optoelectronic devices 100 and help to improve the performance of optoelectronic devices 100, such as electron blocking layer, hole blocking layer, interface modification layer, etc.

[0042] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the actual needs of the optoelectronic device 100.

[0043] Secondly, this application proposes a method for fabricating an optoelectronic device 100, which may include: sequentially fabricating multiple film layers according to a predetermined film layer order to obtain the optoelectronic device 100. The predetermined film layer order refers to the order in which the optoelectronic device 100 is stacked from bottom to top.

[0044] For example, in some embodiments, the optoelectronic device 100 is an inverted device, and the method for fabricating the optoelectronic device 100 includes the following steps:

[0045] S10a provides cathode 20, amorphous oxide and N-type metal oxide;

[0046] S20a, the amorphous oxide is disposed on one side of the cathode 20 to obtain a modification layer 60;

[0047] S30a, the N-type metal oxide is disposed on the side of the modification layer 60 away from the cathode 20 to obtain the electronic functional layer 70;

[0048] S40a, an anode 10 is provided on the side of the electronic functional layer 70 opposite to the decorative layer 60.

[0049] For example, in some other embodiments, the optoelectronic device 100 is a positive-position device, and the method for fabricating the optoelectronic device 100 includes the following steps:

[0050] S10b provides anode 10, amorphous oxide, and N-type metal oxide;

[0051] S20b, the N-type metal oxide is disposed on one side of the anode 10 to obtain an electronic functional layer 70;

[0052] S30b, the amorphous oxide is disposed on the side of the electronic functional layer 70 away from the anode 10 to obtain the modification layer 60;

[0053] S40b, a cathode 20 is disposed on the side of the decorative layer 60 opposite to the electronic functional layer 70.

[0054] In some embodiments, the step of setting the amorphous oxide to obtain the modification layer 60 in steps S20a and S20b may specifically include: dispersing the amorphous oxide in an organic solvent to obtain an amorphous oxide solution; depositing the amorphous oxide solution; and heat-treating it to obtain the modification layer 60.

[0055] The organic solvent includes one or more of C1-C6 alcohol solvents, N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), dimethylacetamide, methyl tert-butyl ether, ethylene glycol monomethyl ether, and 3-methoxybutanol, and the C1-C6 alcohol solvent includes one or more of methanol, ethanol, isopropanol, butanol, and pentanol.

[0056] In the amorphous oxide solution, the concentration of the amorphous oxide is 3 to 15 mg / ml; for example, it can be 3 mg / ml, 4 mg / ml, 5 mg / ml, 6 mg / ml, 7 mg / ml, 8 mg / ml, 9 mg / ml, 10 mg / ml, 11 mg / ml, 12 mg / ml, 13 mg / ml, 14 mg / ml, 15 mg / ml, or any value between any two of the above.

[0057] To promote uniform dispersion of amorphous oxides, ultrasonication can be used to disperse the amorphous oxides in an organic solvent. In some embodiments, the ultrasonication time can be 10 min to 12 h; for example, it can be 10 min, 20 min, 30 min, 40 min, 50 min, 60 min, 1.5 h, 2 h, 3 h, 4 h, 5 h, 6 h, 7 h, 8 h, 9 h, 10 h, 11 h, 12 h, or any value between any two of the above.

[0058] The temperature of the heat treatment can be 80 to 130°C; for example, it can be 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, or any two of the above values.

[0059] The heat treatment time can be 10 to 60 minutes; for example, it can be 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 60 minutes, or any value between any two of the above.

[0060] In some embodiments, the step of setting the N-type metal oxide to obtain the electronic functional layer 70 in steps S30a and S30b may specifically include: dispersing the N-type metal oxide in an organic solvent to obtain an N-type metal oxide solution; depositing the N-type metal oxide solution; and heat-treating it to obtain the electronic functional layer 70. The organic solvent includes one or more of C1-C6 alcohol solvents and C2-C10 alcohol ether solvents. The C1-C6 alcohol solvents include one or more of methanol, ethanol, butanol, and pentanol. The C2-C10 alcohol ether solvents include one or more of ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, 3-methoxybutanol, and ethylene glycol monohexyl ether.

[0061] Wherein, in the N-type metal oxide solution, the concentration of the N-type metal oxide is 15 to 40 mg / ml; for example, it can be 15 mg / ml, 20 mg / ml, 25 mg / ml, 30 mg / ml, 35 mg / ml, 40 mg / ml, or any value between any two of the above.

[0062] The temperature of the heat treatment can be 80 to 130°C; for example, it can be 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, or any two of the above values.

[0063] The heat treatment time can be 10 to 60 minutes; for example, it can be 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 60 minutes, or any value between any two of the above.

[0064] The methods for forming the various film layers can be chemical or physical. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition or solution processing. Physical deposition methods include thermal evaporation deposition (CVD), electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition (PVD), atomic layer deposition, and pulsed laser deposition. Solution processing methods include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating. Those skilled in the art can prepare the various film layers of the optoelectronic device 100 of this application embodiment according to the known methods for preparing optoelectronic devices 100, which will not be elaborated further here.

[0065] Thirdly, this application also relates to a display device, which includes the optoelectronic device 100 provided in this application, or the optoelectronic device 100 prepared by the preparation method described above. The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0066] The present application will be specifically described below through specific embodiments. These embodiments are only some embodiments of the present application and are not intended to limit the present application. Unless otherwise specified, the raw materials used in the following embodiments are all commercially available products.

[0067] Example 1

[0068] (1) A glass substrate with an ITO anode layer on its surface is provided, wherein the average thickness of the anode is 100 nm.

[0069] (2) A chlorobenzene solution of TFB (TFB concentration of 10 mg / mL) was spin-coated onto ITO with an average thickness of 25 nm. The film was then dried under vacuum to obtain a hole transport layer.

[0070] (3) A solution of blue quantum dots CdSe in n-octane (concentration of 30 mg / mL) was spin-coated onto the hole transport layer with an average thickness of 25 nm. The film was then dried under vacuum to obtain the light-emitting layer.

[0071] (4) Zinc chloride was added to DMF to form a zinc chloride solution with a total zinc ion concentration of 0.5 mol / L. NaOH-ethanol solution (NaOH concentration of 0.6 mol / L) was added dropwise at room temperature (25℃), and stirring was continued for 1.5 h to obtain a clear and transparent solution. ZnO nanoparticles were precipitated with acetone (as a precipitant), collected by centrifugation, and then dissolved and dispersed with an appropriate amount of ethanol to obtain a ZnO-ethanol solution (ZnO concentration of 30 mg / ml).

[0072] (5) Spin-coating ZnO-ethanol solution onto the light-emitting layer at a spin speed of 3k r / min for 30s and annealing at 100℃ for 20min to obtain an electronic functional layer with an average thickness of about 40nm.

[0073] (6) Disperse ZrO2 material in ethanol solvent and sonicate for 2 hours to obtain ZrO2. X Solution (ZrO X The concentration of ZrO2 was 5 mg / ml. The above ZrO2 solution was spin-coated onto the electronic functional layer at a spin speed of 3 k r / min for 30 s, followed by heating at 120 °C for 30 min, resulting in a modified layer with an average thickness of approximately 5 nm. The average thickness ratio of the modified layer to the electronic functional layer was 5:40. The modified layer was scanned using a UV-Vis absorption spectrometer, with a spectral range of 200–700 nm. The transmittance of the modified layer was approximately 88%.

[0074] (7) A 70nm thick semi-transparent cathode Ag is deposited on the modification layer and then packaged to obtain a QLED device.

[0075] Example 2

[0076] The scheme in this embodiment is basically the same as that in embodiment 1, except that in step (6) of this embodiment, the ZrO2 material is replaced with Nb2O3. The modified layer is scanned using a UV-Vis absorption spectrometer, and the test spectrum range is 200-700 nm. The transmittance of the modified layer is about 85%.

[0077] Example 3

[0078] The scheme in this embodiment is basically the same as that in embodiment 1, except that in step (6) of this embodiment, the ZrO2 material is replaced with Ta2O3. The modified layer is scanned using a UV-Vis absorption spectrometer, and the test spectrum range is 200-700 nm. The transmittance of the modified layer is about 74%.

[0079] Example 4

[0080] The scheme in this embodiment is basically the same as that in embodiment 1, except that in step (6) of this embodiment, the ZrO2 material is replaced with ZrZnO; accordingly, step (6) is changed to:

[0081] Zirconium chloride and zinc chloride were added to isopropanol at a molar ratio of Zr:Zn = 95:5 and stirred for 2 hours to fully dissolve, forming a metal salt solution with a total concentration of zirconium and zinc ions of 0.5 mol / L. Then, deionized water was added at a volume ratio of 1:1, and a gel was formed through hydrolysis. After drying, the gel was calcined in a tube furnace at 500℃ for 2 hours under an O2 atmosphere to obtain ZrZnO nanoparticles. Inductively coupled plasma atomic emission spectrometry (ICP-AES) analysis showed that the molar percentage of Zn in the ZrZnO nanoparticles was 3.8%.

[0082] ZrZnO material was dispersed in ethanol solvent and sonicated for 2 hours to prepare a ZrZnO solution (ZrZnO concentration 5 mg / ml). This ZrZnO solution was spin-coated onto the electronic functional layer at a spin speed of 3 k r / min for 30 s, followed by heating at 120 °C for 30 min to obtain a modified layer with an average thickness of approximately 5 nm. The modified layer was scanned using a UV-Vis absorption spectrometer, with a spectral range of 200–700 nm, and the transmittance of the modified layer was approximately 86%.

[0083] Example 5

[0084] The scheme in this embodiment is basically the same as that in embodiment 1, except that in step (6) of this embodiment, ZrO2 material is replaced with MgO. The modified layer is scanned using a UV-Vis absorption spectrometer, and the test spectrum range is 200-700 nm. The transmittance of the modified layer is about 78%.

[0085] Example 6

[0086] The scheme in this embodiment is basically the same as that in embodiment 1, the only difference is that in step (6) of this embodiment,

[0087] The average thickness of the modification layer is approximately 3 nm. Correspondingly, the average thickness ratio of the modification layer to the electronic functional layer is 3:40.

[0088] Example 7

[0089] The scheme in this embodiment is basically the same as that in embodiment 1, the only difference is that in step (6) of this embodiment,

[0090] The average thickness of the modification layer is approximately 10 nm. Correspondingly, the average thickness ratio of the modification layer to the electronic functional layer is 10:40.

[0091] Example 8

[0092] The scheme in this embodiment is basically the same as that in embodiment 1, the only difference is that in step (6) of this embodiment,

[0093] The average thickness of the modification layer is approximately 15 nm. Correspondingly, the average thickness ratio of the modification layer to the electronic functional layer is 15:40.

[0094] Comparative Example 1

[0095] The comparative example scheme is basically the same as that of Example 1, except that the QLED device in this comparative example does not have a modification layer. Accordingly, step (6) is deleted and step (7) is used to prepare the cathode on the electronic functional layer.

[0096] Comparative Example 2

[0097] This comparative example is basically the same as Example 1, except that in this comparative example, the modification layer is located between the light-emitting layer and the electronic functional layer; accordingly, steps (4) to (6) are changed to:

[0098] ZrO2 material was dispersed in ethanol solvent and sonicated for 2 hours to obtain ZrO2. X Solution (ZrO X The concentration was 5 mg / ml. The above ZrO... x The solution was spin-coated onto the luminescent layer at a spin speed of 3 k r / min for 30 s. The layer was then heated at 120 °C for 30 min to obtain a modified layer with an average thickness of approximately 5 nm.

[0099] Zinc chloride was added to DMF to form a zinc chloride solution with a total zinc ion concentration of 0.5 mol / L. NaOH-ethanol solution (NaOH concentration 0.6 mol / L) was then added dropwise at room temperature (25℃), and stirring was continued for 1.5 h to obtain a clear and transparent solution. ZnO nanoparticles were precipitated using acetone (as a precipitant), collected by centrifugation, and then dissolved and dispersed in an appropriate amount of ethanol to prepare a ZnO-ethanol solution (ZnO concentration 30 mg / ml).

[0100] A ZnO-ethanol solution was spin-coated onto the modified layer at a spin speed of 3 k r / min for 30 s. The layer was then annealed at 100 °C for 20 min to obtain an electronic functional layer with an average thickness of approximately 40 nm.

[0101] Comparative Example 3

[0102] This comparative example is basically the same as Example 1, except that the electronic functional layer material in this comparative example is the organic electron transport material 8-hydroxyquinoline aluminum. Accordingly, steps (4) and (5) are changed to:

[0103] 8-Hydroxyquinoline aluminum was dispersed in DMF to prepare a solution with a concentration of 30 mg / mL. The solution was then spin-coated onto the luminescent layer at a speed of 3000 rpm / min for 30 seconds, and then heated to 100°C to obtain the electronic functional layer.

[0104] Comparative Example 4

[0105] The comparative example scheme is basically the same as that of comparative example 3. The only difference is that the QLED device in this comparative example does not have a modification layer. Accordingly, based on the preparation method of comparative example 3, step (6) is further deleted, and step (7) prepares the cathode on the electronic functional layer.

[0106] Experimental Example

[0107] The devices fabricated in the above-described device embodiments and comparative examples were subjected to tests for external quantum efficiency (EQE), current efficiency (CE), and turn-on voltage, denoted as Day 1 EQE, Day 1 CE, and Day 1 turn-on voltage. The devices were then stored at room temperature under natural light for 10 days, and the tests were repeated, denoted as Day 10 EQE, Day 10 CE, and Day 10 turn-on voltage. The rate of change for each measured item was calculated as: Rate of change = (Day 10 A - Day 1 A) / Day 1 A * 100%, where A represents EQE, CE, or turn-on voltage. The results are recorded in Table 1.

[0108] The testing methods for each test item are as follows:

[0109] (1) External quantum efficiency (EQE): The ratio of electron-hole pairs injected into a quantum dot to the number of emitted photons, expressed as a percentage (%). It is an important parameter for evaluating the quality of electroluminescent devices and can be measured using an EQE optical testing instrument. The specific calculation formula is as follows:

[0110]

[0111] In the formula, η e For optical output coupling efficiency, η r K represents the ratio of recombination carriers to injected carriers, x represents the ratio of excitons producing photons to the total number of excitons, and K represents the ratio of recombination carriers to injected carriers. R K is the radiation process rate. NR This represents the rate of a non-radiative process.

[0112] Test conditions: Conducted at room temperature with an air humidity of 30-60%.

[0113] (2) Current efficiency CE: The light-emitting area is set to 2mm × 2mm = 4mm 2 The brightness values ​​of the light-emitting device are intermittently collected within the driving voltage range of 0V to 8V. The initial voltage value for collecting the brightness is 0.5V, and the brightness is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the light-emitting device under that collection condition, and the maximum current efficiency (C.Emax, cd / A) is obtained.

[0114] (3) The test method for the turn-on voltage is as follows: the voltage value when the brightness reaches 1 nit is obtained by using the efficiency test system built with Keith ley 6485, which is the turn-on voltage.

[0115] Table 1

[0116]

[0117]

[0118] As can be seen from the table above:

[0119] Compared to Comparative Example 1, Examples 1 to 8 all exhibit higher EQE and CE, as well as lower turn-on voltage, lower EQE change rate, CE change rate, and turn-on voltage change rate. This indicates that setting the modification layer helps improve the external quantum efficiency, current efficiency, and stability of the device, and helps reduce its turn-on voltage. Furthermore, comparing Examples 1 and Comparative Example 2 with Comparative Example 1, all parameters of Example 1 are significantly improved, while Comparative Example 2 shows a decreasing trend compared to Comparative Example 1. This indicates that placing the modification layer between the electronic functional layer and the cathode can effectively exert its function, suppressing the migration and reaction of cathode elements, reducing the corrosion of the cathode caused by the electronic functional layer during the current-carrying process, and forming a heterogeneous interface structure with the electronic functional layer to improve the conductivity stability of the electronic functional layer, improve the carrier transport efficiency and balance, and improve the exciton recombination efficiency.

[0120] The parameters of Comparative Example 3 device showed improvement compared to Comparative Example 4, but the improvement was significantly less than that of Example 1 compared to Comparative Example 1. This may be because: firstly, when organic electron transport materials are used as the electronic functional layer material, the corrosion of the cathode mostly originates from external water and oxygen, with relatively less corrosion from the electronic functional layer. This means that the presence of the modification layer does not significantly enhance the stability of Comparative Example 3 device, and its effect is not as significant as that of Example 1 device. Secondly, it is difficult for organic electron transport materials and modification layers to form heterogeneous interface structures, resulting in relatively small improvements in the conductivity stability of the electronic functional layer, interface contact quality, carrier transport efficiency, carrier balance, and exciton recombination efficiency. This indicates that the modification layer scheme of this application is more suitable for optoelectronic devices using N-type metal oxides as the electronic functional layer material, and has a more prominent gain effect.

[0121] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An optoelectronic device, characterized in that, It includes a cathode, a modification layer, an electronic functional layer, and an anode stacked together, wherein the modification layer is made of an amorphous oxide and the electronic functional layer is made of an N-type metal oxide.

2. The optoelectronic device according to claim 1, characterized in that, The ratio of the average thickness of the electronic functional layer to the average thickness of the modification layer is (30-50):(3-10); and / or, The light transmittance of the modified layer is 74-90%.

3. The optoelectronic device according to claim 1 or 2, characterized in that, The average thickness of the electronic functional layer is 30–50 nm; and / or, The average thickness of the modified layer is 3–10 nm.

4. The optoelectronic device according to claim 1, characterized in that, The N-type metal oxide includes one or more of undoped metal oxides and doped metal oxides; the undoped metal oxide includes one or more of ZnO, TiO2, SnO2, Al2O3, and Ga2O3; the doped metal oxide is a metal oxide doped with a first dopant element, which includes one or more of ZnO, TiO2, SnO2, Al2O3, and Ga2O3, and the first dopant element includes one or more of Al, Mg, Li, In, and Ga; and / or, The amorphous oxide includes one or more of undoped amorphous oxides and doped amorphous oxides; the undoped amorphous oxide includes ZrO. x TiO x HfO x NbO x And TaO x One or more of the following, wherein the doped amorphous oxide is an amorphous oxide doped with a second doping element, and the amorphous oxide includes ZrO. x TiO x HfO x NbO x And TaO x One or more of the following, wherein the second doping element includes one or more of Li, Mg, Zn, Sn, Ga, In and Al, wherein each occurrence of x is independently selected from any real number from 1 to 5.

5. The optoelectronic device according to claim 4, characterized in that, In the doped metal oxide, the molar percentage of the first dopant element is 0.1–10%; and / or, In the doped amorphous oxide, the molar percentage of the second dopant element is 0.1% to 1%.

6. The optoelectronic device according to claim 1, characterized in that, The optoelectronic device further includes a light functional layer disposed between the electronic functional layer and the anode. The light functional layer is made of organic optoelectronic materials or quantum dot optoelectronic materials. The organic optoelectronic materials include one or more of the following: diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives or fluorene derivatives, blue-emitting TBPe fluorescent materials, green-emitting TTPA fluorescent materials, orange-emitting TBRb fluorescent materials, and red-emitting DBP fluorescent materials. The quantum dot optoelectronic materials include one or more of the following: single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The shell of the core-shell structure quantum dots comprises one or more layers. The materials of the single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials are... The core material for constructing quantum dots and the shell material for core-shell structured quantum dots respectively include one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds; the group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe ... The compounds include one or more of the following: nTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V compounds include GaN, GaP, GaAs, and GaSb. , AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, One or more of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb;The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2 + Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of the following, where X is a halide anion selected from Cl... - ,Br - I - One or more of the following; and / or, The optoelectronic device further includes a hole functional layer disposed between the electronic functional layer and the anode. The hole functional layer comprises one or both of a hole transport layer and a hole injection layer. When the hole functional layer comprises both the hole transport layer and the hole injection layer, the hole injection layer is disposed closer to the anode, and the hole transport layer is disposed closer to the electronic functional layer. The material of the hole transport layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-... -(N-(4-sec-butylphenyl)diphenylamine)], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, tris(3-methylphenylphenylamino)-triphenylamine, poly (p)Phenylacetene, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS, poly(N-vinylcarbazole), polymethacrylate, poly(9,9-octylfluorene), N,N'-di(naphthyl-1-yl)-N,N'-diphenyl One or more of benzidine and spiron NPB; the material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS-doped derivatives of s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethyl ether, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide; and / or, The anode and the cathode are each independently selected from doped metal oxide particle electrodes, metal and metal oxide composite electrodes, graphene electrodes, carbon nanotube electrodes, metal electrodes, or alloy electrodes. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The metal and metal oxide composite electrode is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba.

7. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: We provide cathodes, amorphous oxides, and N-type metal oxides; The amorphous oxide is disposed on one side of the cathode to obtain a modification layer; An N-type metal oxide is disposed on the side of the modification layer opposite to the cathode to obtain an electronic functional layer; An anode is disposed on the side of the electronic functional layer opposite to the decorative layer; or, We offer anodes, amorphous oxides, and N-type metal oxides; An N-type metal oxide is disposed on one side of the anode to obtain an electronic functional layer; A modification layer is obtained by depositing the amorphous oxide on the side of the electronic functional layer opposite to the anode; A cathode is disposed on the side of the decorative layer opposite to the electronic functional layer.

8. The preparation method according to claim 7, characterized in that, The steps of setting the amorphous oxide to obtain the modified layer include: dispersing the amorphous oxide in an organic solvent to obtain an amorphous oxide solution; depositing the amorphous oxide solution; and heat-treating to obtain the modified layer.

9. The preparation method according to claim 8, characterized in that, The organic solvent includes one or more of C1-C6 alcohols, N,N-dimethylformamide, dimethyl sulfoxide, dimethylacetamide, methyl tert-butyl ether, ethylene glycol monomethyl ether, and 3-methoxybutanol; the C1-C6 alcohols include one or more of methanol, ethanol, isopropanol, butanol, pentanol, and hexanol; and / or, In the amorphous oxide solution, the concentration of the amorphous oxide is 3–15 mg / ml; and / or, The heat treatment temperature is 80–130°C; and / or, The heat treatment time is 10–60 min; and / or, The amorphous oxide is dispersed in an organic solvent by ultrasound for a duration of 10 min to 12 h.

10. A display device, characterized in that, It includes the optoelectronic device as described in any one of claims 1 to 6, or the optoelectronic device prepared by the preparation method described in any one of claims 7 to 9.

Images