Coating material for processing chamber

Abstract

The invention relates to a coating material for a processing chamber. Embodiments described herein relate to methods of controlling the uniformity of SiN films deposited on large substrates. When a precursor gas or gas mixture in a chamber is excited by applying radio frequency (RF) power to the chamber, an RF current flowing through the plasma produces a standing wave effect (SWE) in an inter-electrode gap. When the substrate or electrode size approaches the RF wavelength, SWE becomes significant. Process parameters, such as process power, process pressure, electrode pitch, and gas flow ratio, may affect the SWE. These parameters may be altered in order to minimize SWE problems and achieve acceptable thickness and property uniformity. In some embodiments, methods of depositing a dielectric film over a large substrate at various process power ranges, at various process pressure ranges, at various gas flow rates while achieving various plasma densities will be used to reduce the SWE to yield greater plasma stability.

Description

[0001] This application is a divisional application of the invention patent application filed on August 19, 2019, with application number 201910765969.0 and entitled "Coating Material for Processing Chambers". Technical Field

[0002] The embodiments described herein generally relate to methods for controlling the uniformity of dielectric films deposited over a substrate, and more specifically to SiN films deposited over a large substrate. Background Technology

[0003] Liquid crystal displays (LCDs) or flat panel displays are commonly used in active-matrix displays, such as computer and television monitors. Plasma-enhanced chemical vapor deposition (PECVD) is generally used to deposit thin films on substrates such as transparent substrates for flat panel displays or semiconductor wafers. PECVD is typically performed by introducing a precursor gas or gas mixture into a vacuum chamber housing the substrate. The precursor gas or gas mixture is typically guided downwards through a distribution plate positioned near the top of the chamber. By applying radio frequency (RF) power from one or more RF sources coupled to the chamber, the precursor gas or gas mixture within the chamber is excited (e.g., aroused) into plasma. The excited gas or gas mixture reacts to form a layer of material on the surface of the substrate positioned on a temperature-controlled substrate support. Volatile byproducts generated during the reaction are pumped out of the chamber via an exhaust system.

[0004] Flat panels processed by PECVD technology are typically large. As substrate sizes continue to increase in the TFT-LCD industry, controlling the film thickness and property uniformity of large-area PECVD becomes problematic. For example, differences in deposition rates and / or film properties (such as film stress) between the center and edges of the substrate become significant. With the increasing size of substrates in the TFT-LCD industry, the film thickness and property uniformity of large-area PECVD becomes even more problematic. For some high-deposition-rate SiN films, notable examples of uniformity problems include higher deposition rates and more compressed film in the central region of large substrates. The thickness uniformity across the substrate exhibits a "dome-shaped" or "center-thick" pattern, where the film is thicker in the central region than at the edges. Larger substrates exhibit even worse center thickness uniformity problems.

[0005] Therefore, there is a need in the art to improve the film deposition thickness and uniformity of film properties of thin films, especially SiN films deposited on large substrates in PECVD chambers. Summary of the Invention

[0006] One or more embodiments described herein relate to a method for depositing SiN films on a large substrate.

[0007] In one embodiment, a method having a size greater than approximately 9m 2 A method for depositing a dielectric film over a substrate with a surface area of ​​approximately 0.25 W / cm² includes: depositing the dielectric film in a process chamber at a power source, the power source being approximately 0.25 W / cm². 2 Approximately 0.35 W / cm 2 The power density is between; the dielectric film is deposited at a process pressure between about 1.0 Torr and about 1.5 Torr; and the dielectric film is deposited from a precursor comprising N2, NH3 and SiH4, wherein the NH3 / SiH4 flow ratio is between about 1.5 and about 9, the N2 / SiH4 flow ratio is between about 2.0 and about 6.0, and the N2 / NH3 flow ratio is between about 0.4 and about 2.0.

[0008] In another embodiment, a type having a diameter greater than about 9m 2 A method for depositing a dielectric film over a substrate with a surface area of ​​approximately 0.25 W / cm² includes: depositing the dielectric film at a process power density of approximately 0.25 W / cm². 2 Approximately 0.35 W / cm 2 The dielectric film is deposited at a process pressure between about 1.3 Torr and about 1.5 Torr; and the dielectric film is deposited from a precursor comprising N2, NH3 and SiH4, wherein the NH3 / SiH4 flow ratio is between about 1.5 and about 7.0, the N2 / SiH4 flow ratio is between about 2.0 and about 5.0, and the N2 / NH3 flow ratio is between about 0.4 and about 2.0.

[0009] In another embodiment, a type having a diameter greater than about 9m 2 A method for depositing a dielectric film over a substrate with a surface area of ​​0.30 W / cm² includes: depositing the dielectric film at a process power density of 0.30 W / cm². 2 Approximately 0.35 W / cm 2 The dielectric film is deposited at a process pressure between about 1.3 Torr and about 1.5 Torr; and the dielectric film is deposited from a precursor comprising N2, NH3 and SiH4, wherein the NH3 / SiH4 flow ratio is between about 2.0 and about 4.5, the N2 / SiH4 flow ratio is between about 2.0 and about 4.0, and the N2 / NH3 flow ratio is between about 0.6 and about 2.0. Attached Figure Description

[0010] Therefore, the above-described features of this disclosure can be understood in detail by referring to embodiments, to obtain a more specific description of the disclosure briefly outlined above, some of which are shown in the accompanying drawings. However, it should be noted that the drawings only illustrate typical embodiments of this disclosure and should therefore not be considered as limiting the scope of this disclosure, as other equivalent embodiments are permissible.

[0011] Figure 1 This is a schematic cross-sectional view of a system according to at least one embodiment described in this disclosure;

[0012] Figure 2 It is based on Figure 1 A partial cross-sectional view of an exemplary diffuser plate; and

[0013] Figure 3 This is a flowchart of a method according to at least one embodiment described in this disclosure.

[0014] For ease of understanding, the same reference numerals have been used as much as possible to denote common elements in the figures. It is contemplated that elements and / or features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0015] In the following description, numerous specific details are set forth to provide a more thorough understanding of embodiments of this disclosure. However, it will be apparent to those skilled in the art that one or more embodiments of this disclosure may be practiced without one or more of these specific details. In other instances, well-known features have not been described to avoid obscuring one or more embodiments of this disclosure.

[0016] The embodiments described herein generally relate to methods for controlling the uniformity of dielectric films deposited over a substrate, and more specifically to the deposition of SiN films over large-area substrates. When a PECVD system deposits a thin film on a substrate, a precursor gas or gas mixture is typically guided downwards through a distribution plate positioned near the top of the chamber. When the precursor gas or gas mixture in the chamber is excited by applying RF power to the chamber from one or more RF sources coupled to a biasable chamber component, the RF current flowing through the plasma generates a standing wave effect (SWE) in the inter-electrode gap. The SWE itself is clearly manifested as an increase in film thickness at the dome or center of the substrate. The SWE becomes significant when the substrate or electrode dimensions approach the RF wavelength. Increasing the wavelength by decreasing the RF frequency is undesirable because the higher plasma potential (as indicated by peak-to-peak voltage) causes ion bombardment, which can damage the substrate and the film. The RF frequency can be increased for other reasons, such as, but not limited to, increasing the deposition rate, thereby only exacerbating the standing wave effect. Therefore, reliable solutions to the SWE problem and the large substrate problem must be found.

[0017] If process parameters such as process power, process pressure, electrode spacing, and gas flow rate ratio have been identified as affecting SWE (Surface Effect Weakness), these parameters can be modified to minimize SWE issues and achieve acceptable thickness and property uniformity. In some implementations, methods for depositing dielectric films over large substrates at various process power ranges, process pressure ranges, and gas flow rates while achieving various plasma densities are used to reduce SWE and generate greater plasma stability. Using these process parameters will help mitigate or eliminate the problem of film thickness being higher in the central region of the substrate than at the edge regions due to SWE, and will result in more uniform film thickness across the entire substrate. These parameters and ranges will be discussed in more detail herein.

[0018] Figure 1This is a schematic cross-sectional view of a system 100 according to at least one embodiment described in this disclosure. System 100 is generally a PECVD system, but may also be other suitable systems. System 100 generally includes a processing chamber 102 coupled to a gas source 104. Processing chamber 102 has walls 106 and a bottom 108 that partially define a process space 110. Typically, the process space 110 is accessed through a port (not shown) in wall 106, which facilitates the movement of a substrate 112 into and out of processing chamber 102. Wall 106 and bottom 108 may be made of a single block of aluminum or other materials compatible with the process. Wall 106 supports a cover assembly 114, which includes a pumped gas chamber 116 (which includes various pumping components, not shown) that couples the process space 110 to an exhaust port. Alternatively, the exhaust port (not shown) may be located in the floor of processing chamber 102, and the process space 110 may not require a pumped gas chamber 116.

[0019] A temperature-controlled support assembly 118 is centrally disposed within the processing chamber 102. The support assembly 118 supports the substrate 112 during processing. In one embodiment, the support assembly 118 includes a body 120 that encapsulates at least one embedded heater 122. The heater 122 (such as a resistive element) disposed in the support assembly 118 is coupled to an optional power source 128 and controllably heats the support assembly 118 and the substrate 112 positioned thereon to a predetermined temperature. Typically, in a CVD process, the heater 122 maintains the substrate 112 at a uniform temperature between about 120 degrees Celsius and at least about 460 degrees Celsius, depending on the deposition processing parameters of the material being deposited.

[0020] Generally, the support assembly 118 has an upper side 124 and a lower side 126. The upper side 124 supports the substrate 112. The lower side 126 has a rod 127 connected thereto. The rod 127 couples the support assembly 118 to a lifting system (not shown) that moves the support assembly 118 between an elevated processing position (as shown) and a lowered position, the lowered position facilitating the transfer of the substrate to and from the processing chamber 102. The rod 127 also provides conduits for power and thermocouple leads between the support assembly 118 and other components of the system 100.

[0021] The support assembly 118 is generally grounded, so that RF power supplied by the power source 128 to the gas distribution plate assembly 130 (or other electrodes located within or near the cover assembly of the chamber) positioned between the cover assembly 114 and the substrate support assembly 118 can excite the gas present in the process space 110 between the support assembly 118 and the gas distribution plate assembly 130. The RF power from the power source 128 is typically selected to drive the CVD process based on the size of the substrate.

[0022] The cover assembly 114 provides the upper boundary of the process space 110. In one embodiment, the cover assembly 114 is made of aluminum (Al). The cover assembly 114 includes a pumping chamber 116 formed therein, which is coupled to an external pumping system (not shown). The pumping chamber 116 is used to uniformly draw channel gas and processing byproducts from the process space 110 and out of the processing chamber 102. The cover assembly 114 typically includes an inlet port 132 through which process gas supplied by the gas source 104 is introduced into the processing chamber 102. The inlet port 132 is also coupled to a cleaning source 134. The cleaning source 134 typically provides a cleaning agent, such as dissociated fluorine, which is introduced into the processing chamber 102 to remove deposited byproducts and films from the processing chamber hardware, including the gas distribution plate assembly 130.

[0023] Gas distribution plate assembly 130 is coupled to the inner surface 136 of cover assembly 114. The shape of gas distribution plate assembly 130 is typically configured to substantially conform to the periphery of substrate 112, for example, a polygon for large-area flat substrates and a circle for wafers. Gas distribution plate assembly 130 includes perforated regions 138 through which process and other gases supplied from gas source 104 are delivered to process space 110. The perforated regions 138 of gas distribution plate assembly 130 are configured to provide a uniform distribution of gas entering process chamber 102 through gas distribution plate assembly 130. Gas distribution plate assembly 130 typically includes a diffuser plate 140 suspended on hanger plate 142. Diffuser plate 140 and hanger plate 142 may alternatively comprise a single integral component. Multiple gas passages 144 are formed through diffuser plate 140 to allow a predetermined gas distribution to pass through gas distribution plate assembly 130 and into process space 110. A gas chamber 146 is formed between the hanging plate 142, the diffuser plate 140, and the inner surface 136 of the cover assembly 114. The gas chamber 146 allows the gas flowing through the cover assembly 114 to be evenly distributed across the width of the diffuser plate 140, so that the gas is evenly supplied above the perforated area 138 and flows evenly through the gas passage 144.

[0024] The diffuser plate 140 is typically made of stainless steel, aluminum (Al), nickel (Ni), or other RF conductive materials. The diffuser plate 140 can be cast, brazed, forged, hot isostatically pressed, or sintered. In one embodiment, the diffuser plate 140 is made of bare, unanodized aluminum. It has been shown that the unanodized aluminum surface used for the diffuser plate 140 reduces particle formation thereon, which could subsequently contaminate the substrate processed in system 100. Additionally, the manufacturing cost of the diffuser plate 140 is reduced when it is not anodized. The diffuser plate 140 can be circular for semiconductor wafer manufacturing or polygonal, such as rectangular, for flat panel display manufacturing.

[0025] Typically, standard practice in the art for diffuser plates 140 is to configure them substantially flat and parallel to the substrate 112, and to ensure that the distribution of identical gas passages 144 across the surface of the diffuser plate 140 is substantially uniform. This configuration of the diffuser plate 140 provides sufficient gas flow and plasma density uniformity in the process space 110 for film deposition on smaller substrates. However, as substrate size increases, the uniformity of deposited films, especially SiN films, becomes more difficult to maintain. A diffuser plate 140 with a uniform distribution of gas passages 144 of uniform size and shape generally cannot deposit films with acceptable thickness and film property uniformity onto large-area substrates. It has been shown that for SiN films deposited on larger substrates, film thickness and film property uniformity can be improved by using a hollow cathode gradient (HCG) as described below.

[0026] Figure 2 It includes HCG. Figure 1 A partial cross-sectional view of a portion of the diffuser plate 140. The diffuser plate 140 includes a first or upstream side 202 facing the cap assembly 114 and an opposing second or downstream side 204 facing the support assembly 118. Each gas passage 144 is defined by a first borehole 206 coupled to a second borehole 210 via an orifice 208, thus combining to form a fluid path through the gas distribution plate assembly 130. The first borehole 206 extends from the upstream side 202 of the gas distribution plate assembly 130 to a bottom 214 by a first depth 212. The bottom 214 of the first borehole 206 may be tapered, sloped, chamfered, or rounded to minimize flow restriction as gas flows from the first borehole into the orifice 208. The diameter of the first borehole 206 is generally from about 0.093 to about 0.218 inches, and in one embodiment is about 0.156 inches.

[0027] A second drilled hole 210 is formed in the diffuser plate 140 and extends from the downstream side (or end) 204 to a depth 216 of about 0.10 inches to about 2.0 inches. Preferably, the depth 216 is between about 0.1 inches and about 1.0 inch. The opening diameter 218 of the second drilled hole 210 is generally between about 0.1 inches and about 1.0 inch, and it can open at an opening angle 220 of about 10 degrees to about 50 degrees. Preferably, the opening diameter 218 is between about 0.1 inches and about 0.5 inches, and the opening angle 220 is between 20 degrees and about 40 degrees. The surface area of ​​the second drilled hole 210 is between about 0.05 square inches and about 10 square inches, and preferably between about 0.05 square inches and about 5 square inches. The diameter of the second drilled hole 210 refers to the diameter intersecting with the downstream surface 204. An example of a diffuser plate 140 for processing a large substrate has a second drilled hole 210 with a diameter of 0.302 inches and an opening angle 220 of about 22 degrees. The distance 228 between the rims 222 of adjacent second boreholes 210 is between about 0 inches and about 0.6 inches, preferably between about 0 inches and about 0.4 inches. The diameter of the first borehole 206 is generally, but not limited to, at least equal to or smaller than the diameter of the second borehole 210. The bottom 224 of the second borehole 210 may be tapered, sloping, chamfered, or rounded to minimize pressure loss of gas flowing out of the orifice 208 and into the second borehole 210. Furthermore, because the proximity of the orifice 208 to the downstream side 204 minimizes the exposed surface areas of the second borehole 210 and the downstream side 204 facing the substrate, the downstream area of ​​the diffuser plate 140 exposed to fluorine supplied during chamber cleaning is reduced, thereby reducing fluorine contamination of the deposited film.

[0028] Orifice 208 is generally coupled to the bottom 214 of the first borehole 206 and the bottom 224 of the second borehole 210. Orifice 208 generally has a diameter of about 0.01 inches to about 0.3 inches, preferably about 0.01 inches to about 0.1 inches, and typically has a length 226 of about 0.02 inches to about 1.0 inch, preferably about 0.02 inches to about 0.5 inches. The length 226 and diameter (or other geometric properties) of orifice 208 are the primary source of back pressure in gas chamber 146, which facilitates uniform gas distribution across the upstream side 202 of gas distribution plate assembly 130. Orifice 208 is typically uniformly arranged among a plurality of gas passages 144; however, the orifice 208 can be constrained to allow different arrangements among the gas passages 144 to facilitate greater gas flow across one region of gas distribution plate assembly 130 relative to another region. For example, the orifice 208 may have a larger diameter and / or a shorter length 226 in those gas passages 144 closer to the wall 106 of the gas distribution plate assembly 130, such that more gas flows through the edge of the perforated region 138 to increase the deposition rate at the periphery of the substrate. The thickness of the diffuser plate 140 is between about 0.8 inches and about 3.0 inches, preferably between about 0.8 inches and about 2.0 inches.

[0029] use Figure 2 Taking the design in the example, the volume of the second borehole 210 can be changed by altering the opening diameter 218, depth 216, and / or opening angle 220. Changing the diameter, depth, and / or opening angle will also change the surface area of ​​the second borehole 210. It is believed that a higher plasma density may be the reason for the higher deposition rate at the center of the substrate 112 (e.g., Figure 1 (As shown). By decreasing the borehole depth 216, diameter, opening angle 220, or a combination of these three parameters from the edge to the center of the diffuser plate 140, the plasma density in the central region of the substrate can be reduced to improve film thickness and film property uniformity. For example, one way to improve film properties is to design the downstream surface 204 of the diffuser plate 140 to have a concave shape. In this case, the vertex can be located approximately above the center point of the substrate 112, where the electrode spacing increases from the edge to the center of the diffuser plate 140.

[0030] Despite Figure 2 The HCG design described herein also helps improve film uniformity, but greater improvements can be achieved by carefully controlling the process parameters in the production of SiN gate dielectric films, especially when used on large substrates. Using the following processing parameters will help alleviate or reduce the problem that the film thickness in the central region is higher than that in the edge region of the substrate 112, and produce a more uniform edge thickness across the entire substrate 112 up to the edge of the substrate.

[0031] For example, it is believed that using NH3 gas, which has a higher flow rate than N2, is useful because the weak NH bond strength in NH3 gas allows for the application of lower power to dissociate nitrogen and hydrogen. Lower process power helps improve plasma stability and mitigate SWE. The table below contains processing parameters that can be applied in the process of SiN film deposition on large-area substrates.

[0032] Table 1:

[0033]

[0034]

[0035] Figure 3 This is a flowchart illustrating method 300 according to at least one embodiment of the present disclosure. It has been found that each block appearing in method 300 is particularly suitable for applications with a diameter greater than approximately 9m. 2 A dielectric film is deposited on top of a substrate with a surface area of ​​[missing information], however other substrate sizes with larger or smaller surface areas can be used.

[0036] In box 302, a dielectric film is deposited at a specific process power range. As shown in Table 1, the process power density range can be approximately 0.25 watts (W) / cm². 2 Approximately 0.35 W / cm 2 Between, preferably between 0.30 W / cm 2 Up to 0.35W / cm 2 However, other ranges are possible. When compared with various gases at various flow rates, power in these ranges can provide greater uniformity to the membrane substrate, which will be discussed in more detail in box 306.

[0037] In box 304, a dielectric film is deposited at process pressure. Also as shown in Table 1, the process pressure can be between about 1.0 Torr and about 1.5 Torr, preferably between 1.3 Torr and 1.5 Torr, but other ranges are possible. Similar to power, pressures in these ranges can provide greater uniformity to the film substrate when compared to various gases at various flow rates, which will be discussed in more detail in box 306.

[0038] In block 306, a dielectric film is deposited from a precursor gas. In some embodiments, the precursor gas includes N2, NH3, and SiH4; however, other precursor gases are also possible. As shown in Table 1, the precursor gases have various flow rate ranges. Various gases provided at various flow rates can be used to provide desired membrane results when combined with other process parameters within the process range. For example, various flow ratios of N2 / NH3, NH3 / SiH4, and N2 / SiH4 can be combined at various process powers and pressures to produce desired results. Changing any one parameter can change undesirable membrane results to desired results. In some embodiments, the precursors provided during processing include N2, NH3, and SiH4, wherein the NH3 / SiH4 flow ratio is between about 1.5 and about 9, the N2 / SiH4 flow ratio is between about 2.0 and about 6.0, and the N2 / NH3 flow ratio is between about 0.4 and about 2.0. In another embodiment, the precursors provided during the treatment include N2, NH3, and SiH4, wherein at least one of the flow ratios is selected from the following: an NH3 / SiH4 flow ratio between about 2.0 and about 4.5, an N2 / SiH4 flow ratio between about 2.0 and about 4.0, and an N2 / NH3 flow ratio between about 0.6 and about 2.0. In yet another embodiment, the precursors provided during the treatment include N2, NH3, and SiH4, wherein at least one of the flow ratios is selected from the following: an NH3 / SiH4 flow ratio between about 2.3 and about 4.4, an N2 / SiH4 flow ratio between about 2.6 and about 4.0, and an N2 / NH3 flow ratio between about 0.6 and about 1.0.

[0039] For example, in one implementation, the SiH4 flow rate can be approximately 0.05 sccm / cm. 2 To approximately 0.07 sccm / cm 2 Within the range; the process power density can be approximately 0.30 W / cm². 2 Approximately 0.35 W / cm 2 The process power density can vary between approximately 1.3 Torr and approximately 1.5 Torr to obtain the desired results. In another embodiment, the process power density can be approximately 0.30 W / cm³. 2 Approximately 0.35 W / cm 2 Within a certain range; the process pressure can vary between about 1.3 Torr and about 1.5 Torr; and the temperature in the processing chamber 102 can vary between about 240 degrees Celsius and about 320 degrees Celsius to obtain the desired results. In another embodiment, the SiH4 flow rate can be about 0.05 sccm / cm 2 To approximately 0.07 sccm / cm 2 Within the range; the process power density can be approximately 0.30 W / cm².2 Approximately 0.35 W / cm 2 The process pressure can vary between approximately 1.3 Torr and approximately 1.5 Torr; and the temperature in the processing chamber 102 can vary between approximately 240 degrees Celsius and approximately 320 degrees Celsius to obtain the desired results. In another embodiment, the process power density can be approximately 0.30 W / cm³. 2 Approximately 0.35 W / cm 2 Within the range of approximately 1.3 Torr to approximately 1.5 Torr; the temperature in the processing chamber 102 can vary between approximately 240 degrees Celsius and approximately 320 degrees Celsius; and the electrode spacing at the center of the substrate 112 from the diffuser plate 140 can vary between approximately 900 mils and approximately 1000 mils to obtain the desired results. In another embodiment, the SiH4 flow rate can be approximately 0.05 sccm / cm. 2 To approximately 0.07 sccm / cm 2 Within the range; the process power density can be approximately 0.30 W / cm². 2 Approximately 0.35 W / cm 2 The process pressure can vary between about 1.3 Torr and about 1.5 Torr; the temperature in the processing chamber 102 can vary between about 240 degrees Celsius and about 320 degrees Celsius; and the electrode spacing at the center of the substrate 112 from the diffuser plate 140 can vary between about 900 mils and about 1000 mils to obtain the desired results. The above embodiments only illustrate some examples of the many examples of process parameters within the range provided in Table 1 that can be used to form films with the desired properties. In one embodiment, the desired result achieved in these examples and block 306 is to alleviate or eliminate the problem that the film thickness is higher in the central region of the substrate 112 than in the edge regions, and to produce a more uniform film thickness across the entire substrate 112.

[0040] Each frame in method 300 is designed to improve film uniformity while also maintaining plasma stability and helping to mitigate SWE. More specifically, method 300 helps to alleviate or eliminate the problem of film thickness being higher in the central region of substrate 112 than in the edge regions, and produces a more uniform film thickness across the entire substrate 112 from the central region to the edge due to SWE. This is particularly important for large substrates and processing chambers.

[0041] While the foregoing relates to embodiments of the present disclosure, other and further embodiments of the present disclosure may be conceived without departing from the basic scope of the present disclosure, the scope of which is defined by the appended claims.

Claims

1. A type of material with a diameter greater than approximately 9m 2 A method for depositing a dielectric film over a substrate with a surface area of ​​[missing information] includes: The dielectric film is deposited in a process chamber at a process power of approximately 0.3 W / cm². 2 Approximately 0.35 W / cm 2 The power density between; The dielectric film is deposited under process pressure, wherein the process pressure is between about 1.0 Torr and about 1.5 Torr; and The dielectric film is deposited from a precursor comprising N2, NH3, and SiH4, wherein the NH3 / SiH4 flow ratio is between about 1.5 and about 9, the N2 / SiH4 flow ratio is between about 2.0 and about 6.0, and the N2 / NH3 flow ratio is between about 0.4 and about 2.

0. The electrode spacing between the substrate and the diffuser plate in the process chamber increases from the edge of the diffuser plate to the center of the diffuser plate.

2. The method of claim 1, wherein the electrode spacing in the process chamber is between about 900 mils and about 1000 mils.

3. The method of claim 1, wherein the process pressure is between about 1.3 Torr and about 1.5 Torr.

4. The method of claim 1, wherein the substrate is in a temperature range between about 120 degrees Celsius and about 340 degrees Celsius.

5. The method of claim 4, wherein the temperature is between about 240 degrees Celsius and about 320 degrees Celsius.

6. A type of material with a diameter greater than approximately 9m 2 A method for depositing a dielectric film over a substrate with a surface area of ​​[missing information] includes: The dielectric film is deposited in a process chamber at a process power of approximately 0.3 W / cm². 2 Approximately 0.35 W / cm 2 The power density between; The dielectric film is deposited under process pressure, said process pressure being between about 1.3 Torr and about 1.5 Torr; and The dielectric film is deposited from a precursor comprising N2, NH3, and SiH4, wherein the NH3 / SiH4 flow ratio is between about 1.5 and about 7.0, the N2 / SiH4 flow ratio is between about 2.0 and about 5.0, and the N2 / NH3 flow ratio is between about 0.4 and about 2.

0. The electrode spacing between the substrate and the diffuser plate in the process chamber increases from the edge of the diffuser plate to the center of the diffuser plate.

7. The method of claim 6, wherein the electrode spacing in the process chamber is between about 900 mils and about 1000 mils.

8. The method of claim 6, wherein the substrate is at a temperature between about 120 degrees Celsius and about 340 degrees Celsius.

9. The method of claim 8, wherein the temperature is between about 240 degrees Celsius and about 320 degrees Celsius.

10. A method for using materials with a diameter greater than approximately 9m 2 A method for depositing a dielectric film over a substrate with a surface area of ​​[missing information] includes: The dielectric film is deposited in a process chamber at a process power of 0.30 W / cm². 2 Approximately 0.35 W / cm 2 The power density between; The dielectric film is deposited under process pressure, said process pressure being between about 1.3 Torr and about 1.5 Torr; and The dielectric film is deposited from a precursor comprising N2, NH3, and SiH4, wherein the NH3 / SiH4 flow ratio is between about 2.0 and about 4.5, the N2 / SiH4 flow ratio is between about 2.0 and about 4.0, and the N2 / NH3 flow ratio is between about 0.6 and about 2.

0. The electrode spacing between the substrate and the diffuser plate in the process chamber increases from the edge of the diffuser plate to the center of the diffuser plate.

11. The method of claim 10, wherein the electrode spacing in the process chamber is between about 900 mils and about 1000 mils.

12. The method of claim 10, wherein the substrate is in a temperature range between about 120 degrees Celsius and about 340 degrees Celsius.

13. The method of claim 12, wherein the temperature is between about 240 degrees Celsius and about 320 degrees Celsius.

14. The method of claim 10, wherein the NH3 / SiH4 flow ratio is between about 4.0 and about 4.

5.

15. The method of claim 10, wherein the N2 / SiH4 flow ratio is between about 2.4 and about 2.

6.

16. The method of claim 10, wherein the N2 / SiH3 flow ratio is between about 1.0 and about 2.0.

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