ArF photoresist composition and method for forming photoetching pattern

Abstract

The invention relates to the technical field of semiconductors, in particular to an ArF photoresist composition and a method for forming a photoetching pattern, the ArF photoresist composition comprises ArF photoresist resin, a photoacid generator, a quenching agent and a solvent; the ArF photoresist resin is composed of first resin and second resin, and the weight ratio of the first resin to the second resin is (90-95): (5-10); the first resin is formed by polymerizing a first acid-sensitive monomer, a polar monomer and a lactone monomer; the second resin is formed by polymerizing a second acid-sensitive monomer, a polar monomer and a lactone monomer; the first acid-sensitive monomer is an adamantane acrylate monomer containing ethyl or isopropyl; the second monomer is at least one of M3, M4 and M5. When the ArF photoresist composition is used for photoetching, the EL is improved, the LWR is reduced, and a clearer photoetching pattern is obtained.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to an ArF photoresist composition and a method for forming photolithographic patterns. Background Technology

[0002] ArF photoresist is a high-end photoresist product used in the manufacture of 12-inch silicon wafers, and its technology has extremely high barriers to entry. The existing ArF photoresist preparation process includes: coating, post-apply bake (PAB), exposure, post-exposure bake (PEB), and development. Among these, PEB is a crucial step after exposure and its importance cannot be ignored. The temperature and time of PEB need to be determined based on the type of photoresist used and the specific process requirements. PEB temperature is generally between 60℃ and 150℃, and the duration varies from tens of seconds to several minutes. Excessively high temperatures or excessively long times may cause over-crosslinking of the photoresist, affecting the development of the pattern; while excessively low temperatures or insufficient times may fail to achieve the desired curing effect.

[0003] Exposure energy redundancy (also known as exposure latitude, EL) refers to the maximum allowable relative deviation of exposure energy within the permissible range of linewidth variation (e.g., ±10% of the linewidth). It is an important parameter for evaluating photolithography processes; a higher EL indicates better matching of the process window, directly affecting pattern transfer accuracy. Line width roughness (LWR) is a measurement parameter describing the deviation of photoresist linewidth from the target value due to edge irregularities. Together with line edge roughness (LER), it constitutes a key defect indicator in photolithography processes.

[0004] Currently, in advanced semiconductor manufacturing processes, the requirements for EL and LWR are increasing, but existing methods are insufficient to achieve simultaneous optimization of EL and LWR. Summary of the Invention

[0005] To address the aforementioned technical problems, the present invention provides an ArF photoresist composition and a method for forming a photolithographic pattern, wherein the ArF photoresist composition is used to form a photolithographic pattern, thereby improving EL and LWR.

[0006] In one aspect, the present invention provides an ArF photoresist composition comprising: ArF photoresist resin, photoacid generator, quencher, and solvent;

[0007] The ArF photoresist resin is composed of a first resin and a second resin, and the weight ratio of the first resin to the second resin is 90-95:5-10.

[0008] The first resin is polymerized from a first acid-sensitive monomer, a polar monomer, and a lactone monomer; the second resin is polymerized from a second acid-sensitive monomer, a polar monomer, and a lactone monomer.

[0009] The first acid-sensitive monomer is an adamantane acrylate monomer containing ethyl or isopropyl groups; the second monomer is at least one of the following:

[0010]

[0011] Another aspect of the present invention provides a method for forming a photolithographic pattern, comprising:

[0012] An ArF photoresist composition as described above is coated onto a substrate to form a photoresist layer;

[0013] The photoresist layer is exposed using a mask with a predetermined pattern;

[0014] After exposure, bake at a temperature of 80℃~105℃;

[0015] The photoresist layer treated as described above is placed in a developing solution for development to form a photoresist pattern.

[0016] Compared with the prior art, the ArF photoresist composition or the method for forming photolithographic patterns of the present invention has at least the following beneficial effects: taking the first resin and the second resin as the resin components in the ArF photoresist composition by weight ratio of 90-95:5-10, and then performing photolithography, improves the EL value and reduces the LER, with significant effects. Attached Figure Description

[0017] Figure 1 The first acid-sensitive monomer listed in the embodiments of the present invention;

[0018] Figure 2 The second acid-sensitive monomer listed in the embodiments of the present invention;

[0019] Figure 3 The polar monomers listed in the embodiments of the present invention;

[0020] Figure 4 The lactone monomers listed in the embodiments of the present invention;

[0021] Figure 5 The quenching agents listed in the embodiments of the present invention;

[0022] Figure 6 The photolithographic pattern is shown in Embodiment 1 of the present invention;

[0023] Figure 7 The photolithographic pattern is shown in Comparative Example 1 of this invention;

[0024] Figure 8The photolithographic pattern is shown in Comparative Example 2 of this invention. Detailed Implementation

[0025] To make the objectives and advantages of the present invention clearer, the present invention will be further described below with reference to embodiments; it should be understood that the specific embodiments described herein are merely for explaining the present invention and are not intended to limit the present invention.

[0026] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0027] To better explain the present invention, a brief description of each monomer is given first.

[0028] Acid-sensitive monomers: key components in photoresists, whose acid hydrolysis reaction directly affects the resolution of the photolithographic pattern and the roughness of the line edges. For example... Figure 1 Examples of adamantane acrylate monomers M1 and M2 (first acid-sensitive monomers) containing ethyl and isopropyl groups are given for illustrative purposes in this invention. Figure 2 The second acid-sensitive monomers are M3, M4, and M5.

[0029] Polar monomers: key raw materials in photoresist synthesis, mainly used to adjust the polarity, solubility, and film-forming properties of the photoresist, such as... Figure 3 The polar monomers M6 and M7 given as examples in this invention can also be used in this invention.

[0030] Lactone monomers: monomers used in the synthesis of photoresist resins containing lactone ring structures, such as... Figure 4 The lactone monomers M8 and M9 are given as examples for this invention.

[0031] During research on improving the EL and LWR of ArF photoresist, an unexpected discovery was made: compared to photoresist resins prepared by polymerizing 100% of the first acid-sensitive monomer or 100% of the second acid-sensitive monomer with other monomers, combining photoresist resins polymerized with the first acid-sensitive monomer and other monomers, and photoresist resins polymerized with the second acid-sensitive monomer and other monomers at a weight ratio of 90-95:5-10 as resin components in the ArF photoresist composition, significantly improved EL while reducing LWR, resulting in higher resolution lithographic patterns. This may be because the side group of the first acid-sensitive monomer is an adamantyl group, which has high steric hindrance and can reduce LWR. Simultaneously, the first acid-sensitive monomer can undergo a polarity transition at a lower temperature, thus enabling it to undergo a polarity transition at the PEB temperature of the photolithography process, ensuring pattern formation during subsequent development. The second acid-sensitive monomer, however, is less prone to polarity transition and therefore does not undergo a polarity transition at the PEB temperature. However, a small amount of the second acid-sensitive monomer allows for a more uniform and complete polarity transition of the first acid-sensitive monomer without affecting subsequent development, thus improving the development effect and increasing EL.

[0032] This invention provides an ArF photoresist composition comprising: ArF photoresist resin, photoacid generator, quencher, and solvent;

[0033] The ArF photoresist resin is composed of a first resin and a second resin, and the weight ratio of the first resin to the second resin is 90-95:5-10.

[0034] The first resin is polymerized from a first acid-sensitive monomer, a polar monomer, and a lactone monomer; the second resin is polymerized from a second acid-sensitive monomer, a polar monomer, and a lactone monomer.

[0035] The first acid-sensitive monomer is an adamantane acrylate monomer containing ethyl or isopropyl groups; the second monomer is at least one of the following: M3, M4, M5.

[0036] In some preferred embodiments, the weight ratio of the ArF photoresist resin, photoacid generator, quencher, and solvent is 10-20:0.5-1.5:0.4-0.8:300-500, with the optimal ratio being 15:1:0.6:400.

[0037] In some preferred embodiments, the first acid-sensitive monomer is at least one of the following:

[0038] M1, M2.

[0039] In some preferred embodiments, the polar monomer is at least one of the following: M6, M7.

[0040] In some preferred embodiments, the lactone monomer is at least one of the following: M8, M9.

[0041] In some preferred embodiments, when preparing the first resin, the reaction solvent, initiator, first acid-sensitive monomer, polar monomer, and lactone monomer are added to the reaction vessel and reacted at 60°C to 100°C for 6 to 8 hours.

[0042] In some preferred embodiments, when preparing the second resin, the reaction solvent, initiator, second acid-sensitive monomer, polar monomer, and lactone monomer are added to the reaction vessel and reacted at 60°C to 100°C for 6 to 8 hours.

[0043] In some preferred embodiments, the molar ratio of the first or second acid-sensitive monomer, the polar monomer, and the lactone monomer is 35-50:10-25:35-50.

[0044] In some preferred embodiments, the reaction solvent accounts for 20% to 80% of the total weight of the reaction system.

[0045] In some preferred embodiments, the initiator is 0.1% to 5% of the total weight of the three monomers.

[0046] In some preferred embodiments, the initiator is one or more of azobisisobutyronitrile, azobisisoheptanenitrile, and dimethyl azobisisobutyrate.

[0047] In some preferred embodiments, the photoacid-producing agent is one or more of the following: diazonium salt, thionium salt, iodonium salt, sulfonyl diazomethane, imine sulfonate, nitrobenzene sulfonate, and sulfonic acid oxime esters.

[0048] In some preferred embodiments, the quencher is an amine compound, a sulfonate compound, or a carboxylate compound, more preferably as follows: Figure 5 At least one of C1 and C2 shown.

[0049] In some preferred embodiments, the reaction solvent is one or more of tetrahydrofuran, propylene glycol methyl ether acetate, and propylene glycol methyl ether.

[0050] In some preferred embodiments, the solvent in the ArF photoresist composition is one or more of propylene glycol methyl ether acetate, propylene glycol methyl ether, and methyl ethyl ketone.

[0051] The present invention also provides a method for forming a photolithographic pattern, comprising:

[0052] The aforementioned ArF photoresist composition is coated onto the substrate to form a photoresist layer;

[0053] The photoresist layer is exposed using a mask with a predetermined pattern;

[0054] After exposure, bake at a temperature of 80℃~105℃;

[0055] The photoresist layer treated as described above is placed in a developing solution for development to form a photoresist pattern.

[0056] To better explain the present invention, specific embodiments, comparative examples, and related experimental data are listed below.

[0057] Example 1

[0058] Acid-sensitive monomer M1, polar monomer M6, and lactone monomer M8 were added to a reaction vessel at a molar ratio of 40:20:40. Propylene glycol methyl ether acetate (reaction solvent) was added, accounting for 70% of the reaction system. The mixture was stirred until homogeneous, and then approximately 1% of the total monomers (azobisisobutyronitrile, initiator) was added. The reaction was heated to 80°C for 6 hours. After the reaction was completed, the reaction solution was added dropwise to methanol to precipitate the first resin.

[0059] Acid-sensitive monomer M3, polar monomer M6, and lactone monomer M8 were added to a reaction vessel at a molar ratio of 40:20:40. Propylene glycol methyl ether acetate (reaction solvent) was added, accounting for 70% of the reaction system. The mixture was stirred until homogeneous, and then approximately 1% of the total monomers (azobisisobutyronitrile, initiator) was added. The reaction was heated to 80°C for 6 hours. After the reaction was completed, the reaction solution was added dropwise to methanol to precipitate the second resin.

[0060] The weight-average molecular weight (Mw) and degree of polymerization (PDI) of the first and second resins are shown in the table below:

[0061] Table 1

[0062] name Mw PDI First Resin 10500 1.46 Second resin 10800 1.47

[0063] The ArF photoresist composition was prepared according to the following formula: 1.35 g of first resin, 0.15 g of second resin, 0.1 g of photoacid generator, 0.06 g of quencher C1, 30 g of propylene glycol methyl ether acetate, and 10 g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then developed in a developer for 60 seconds to form the photoresist pattern.

[0064] Example 2

[0065] The ArF photoresist composition was prepared according to the following formula: 1.425g of first resin, 0.075g of second resin, 0.1g of photoacid generator, 0.06g of quencher, 30g of propylene glycol methyl ether acetate, and 10g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then immersed in a developer for 60 seconds to form the photoresist pattern.

[0066] Example 3

[0067] The ArF photoresist composition was prepared according to the following formula: 1.455g of first resin, 0.045g of second resin, 0.1g of photoacid generator, 0.06g of quencher, 30g of propylene glycol methyl ether acetate, and 10g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then immersed in a developer for 60 seconds to form the photoresist pattern.

[0068] Comparative Example 1

[0069] The ArF photoresist composition was prepared according to the following formula: 1.5g of the first resin from Example 1, 0.1g of photoacid generator, 0.06g of quencher, 30g of propylene glycol methyl ether acetate, and 10g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then immersed in a developer for 60 seconds to form a photoresist pattern.

[0070] Comparative Example 2

[0071] The ArF photoresist composition was prepared according to the following formula: 1.5g of the second resin from Example 1, 0.1g of photoacid generator, 0.06g of quencher, 30g of propylene glycol methyl ether acetate, and 10g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then developed in a developer for 60 seconds to form the photoresist pattern.

[0072] Comparative Example 3

[0073] The ArF photoresist composition was prepared according to the following formula: 1.475g of first resin, 0.025g of second resin, 0.1g of photoacid generator, 0.06g of quencher, 30g of propylene glycol methyl ether acetate, and 10g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then developed in a developer for 60 seconds to form the photoresist pattern.

[0074] Comparative Example 4

[0075] The ArF photoresist composition was prepared according to the following formula: 1.2g first resin, 0.3g second resin, 0.1g photoacid generator, 0.06g quencher, 30g propylene glycol methyl ether acetate, and 10g propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then developed in a developer for 60 seconds to form the photoresist pattern.

[0076] In the above photolithography process, a Lithius I type photoresist coating and developing machine was used, with a photoresist coating thickness of 100 nm and a TMAH 2.38% aqueous solution as the developer. A 1900Gi immersion lithography machine was used for exposure, with illumination conditions of a lens numerical aperture of 1.35, ring illumination, XY polarization mode, and an inner diameter and outer diameter of 0.7 mm for the ring illumination. A CG4000 type machine was used for pattern dimensional measurement, with a voltage of 500 V and a current setting of 6 pA. The photolithography-related parameters are shown in the table below.

[0077] Table 2

[0078]

[0079] The results in the table show that the EL value of Example 1 is significantly higher than that of Comparative Examples 1 and 2, while the LWR is significantly lower than that of Comparative Examples 1 and 2. The comparison shows that using a mixture of 90% first resin and 10% second resin as the resin component can effectively improve the EL of the ArF photoresist while reducing the LWR. Furthermore, as... Figure 6 , Figure 7 , Figure 8 The photolithographic patterns of Example 1, Comparative Example 1, and Comparative Example 2 are shown respectively. It can be seen that the pattern of Example 1 is clearer.

[0080] The results from Examples 1-3 and Comparative Examples 3 and 4 show that the EL values ​​of Examples 1-3 are significantly higher than those of Comparative Examples 3-4, and the LWR of Examples 1-2 is significantly lower than that of Examples 3 and Comparative Examples 3 and 4. This indicates that when the weight ratio of the first resin to the second resin is 90-97:3-10, the EL value of the ArF photoresist is increased. When the weight ratio of the first resin to the second resin is 90-95:5-10, not only is the EL value of the ArF photoresist increased, but the LWR is also reduced, resulting in more precise photolithographic patterns.

[0081] Example 4

[0082] Acid-sensitive monomer M2, polar monomer M6, and lactone monomer M8 were added to a reaction vessel at a molar ratio of 40:20:40. Propylene glycol methyl ether acetate (reaction solvent) was added, accounting for 70% of the reaction system. The mixture was stirred until homogeneous, and then approximately 1% of the total monomers (azobisisobutyronitrile, initiator) was added. The reaction was heated to 80°C for 6 hours. After the reaction was completed, the reaction solution was added dropwise to methanol to precipitate the first resin.

[0083] Acid-sensitive monomer M4, polar monomer M6, and lactone monomer M8 were added to a reaction vessel at a molar ratio of 40:20:40. Propylene glycol methyl ether acetate (reaction solvent) was added, accounting for 70% of the reaction system. The mixture was stirred until homogeneous, and then approximately 1% of the total monomer content, along with azobisisobutyronitrile (initiator), was added. The reaction was heated to 80°C for 6 hours. After the reaction was completed, the reaction solution was added dropwise to methanol to precipitate the second resin.

[0084] The weight-average molecular weight (Mw) and degree of polymerization (PDI) of the first and second resins are shown in the table below:

[0085] Table 3

[0086] name Mw PDI First Resin 8800 1.37 Second resin 8600 1.37

[0087] The ArF photoresist composition was prepared according to the following formula: 1.35 g of first resin, 0.15 g of second resin, 0.1 g of photoacid generator, 0.06 g of quencher, 30 g of propylene glycol methyl ether acetate, and 10 g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then immersed in a developer for 60 seconds to form the photoresist pattern.

[0088] Comparative Example 5

[0089] The ArF photoresist composition was prepared according to the following formula: 1.5g of the first resin from Example 4, 0.1g of photoacid generator, 0.06g of quencher, 30g of propylene glycol methyl ether acetate, and 10g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then immersed in a developer for 60 seconds to form a photoresist pattern.

[0090] Comparative Example 6

[0091] The ArF photoresist composition was prepared according to the following formula: 1.5g of the second resin from Example 4, 0.1g of photoacid generator, 0.06g of quencher, 30g of propylene glycol methyl ether acetate, and 10g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then developed in a developer for 60 seconds to form the photoresist pattern.

[0092] In the above photolithography process, a Lithius I type photoresist coating and developing machine was used, with a photoresist coating thickness of 100 nm and a TMAH 2.38% aqueous solution as the developer. A 1900Gi immersion lithography machine was used for exposure, with illumination conditions of a lens numerical aperture of 1.35, ring illumination, XY polarization mode, and an inner diameter and outer diameter of 0.7 mm for the ring illumination. A CG4000 type machine was used for pattern dimensional measurement, with a voltage of 500 V and a current setting of 6 pA. The photolithography-related parameters are shown in the table below.

[0093] Table 4

[0094]

[0095] As shown in the table above, the EL value of Example 4 is significantly greater than that of Comparative Examples 5 and 6, while the LWR is significantly smaller than that of Comparative Examples 5 and 6. This is consistent with the results in Table 2 above.

[0096] Example 5

[0097] Acid-sensitive monomer M1, polar monomer M7, and lactone monomer M9 were added to a reaction vessel at a molar ratio of 40:20:40. Propylene glycol methyl ether acetate (reaction solvent) was added, accounting for 70% of the reaction system. The mixture was stirred until homogeneous, and then approximately 1% of the total monomer content, along with azobisisobutyronitrile (initiator), was added. The reaction was heated to 80°C for 7 hours. After the reaction was completed, the reaction solution was added dropwise to methanol to precipitate the first resin.

[0098] Acid-sensitive monomer M5, polar monomer M7, and lactone monomer M9 were added to a reaction vessel at a molar ratio of 40:20:40. Propylene glycol methyl ether acetate (reaction solvent) was added, accounting for 70% of the reaction system. The mixture was stirred until homogeneous, and then approximately 1% of the total monomer content, along with azobisisobutyronitrile (initiator), was added. The reaction was heated to 80°C for 7 hours. After the reaction was completed, the reaction solution was added dropwise to methanol to precipitate the second resin.

[0099] The weight-average molecular weight (Mw) and degree of polymerization (PDI) of the first and second resins are shown in the table below:

[0100] Table 5

[0101] name Mw PDI First Resin 15000 1.52 Second resin 14800 1.51

[0102] The ArF photoresist composition was prepared according to the following formula: 1.35 g of first resin, 0.15 g of second resin, 0.1 g of photoacid generator, 0.06 g of quencher, 30 g of propylene glycol methyl ether acetate, and 10 g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then immersed in a developer for 60 seconds to form the photoresist pattern.

[0103] Comparative Example 7

[0104] The ArF photoresist composition was prepared according to the following formula: 1.5g of the second resin from Example 5, 0.1g of photoacid generator, 0.06g of quencher, 30g of propylene glycol methyl ether acetate, and 10g of propylene glycol methyl ether. The ArF photoresist composition was coated onto a substrate to form a photoresist layer. The photoresist layer was exposed using a mask with a predetermined pattern. It was baked at 90°C for 2 minutes. The photoresist layer was then immersed in a developer for 60 seconds to form a photoresist pattern.

[0105] In the above photolithography process, a Lithius I type photoresist coating and developing machine was used, with a photoresist coating thickness of 100 nm and a TMAH 2.38% aqueous solution as the developer. A 1900Gi immersion lithography machine was used for exposure, with illumination conditions of a lens numerical aperture of 1.35, ring illumination, XY polarization mode, and an inner diameter and outer diameter of 0.7 mm for the ring illumination. A CG4000 type machine was used for pattern dimensional measurement, with a voltage of 500 V and a current setting of 6 pA. The photolithography-related parameters are shown in the table below.

[0106] Table 6

[0107]

[0108] As shown in the table above, the EL value of Example 5 is significantly greater than that of Comparative Example 7, while the LWR is significantly less than that of Comparative Example 7. This is consistent with the previous results.

[0109] In summary, using adamantane acrylic monomers containing ethyl or isopropyl groups as acid-sensitive monomers, and polymerizing them with polar monomers and lactone monomers to form a first resin; using M3, M4, or M5 of the present invention as acid-sensitive monomers, and polymerizing them with polar monomers and lactone monomers to form a second resin; and then combining the first resin and the second resin in a weight ratio of 90-95:5-10 as the resin component in the ArF photoresist composition for photolithography, can significantly improve EL, reduce LWR, and thus obtain more precise photolithographic patterns.

[0110] The technical solution of the present invention has been described above with reference to the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the scope of protection of the present invention.

[0111] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An ArF photoresist composition, characterized by comprising: The ArF photoresist composition comprises: an ArF photoresist resin, a photoacid generator, a quencher, a solvent; The ArF photoresist resin is composed of a first resin and a second resin, and the weight ratio of the first resin to the second resin is 90-95:5-10; The first resin is polymerized from a first acid-sensitive monomer, a polar monomer and a lactone monomer; and the second resin is polymerized from a second acid-sensitive monomer, a polar monomer and a lactone monomer; The first acid-sensitive monomer is an adamantyl acrylate monomer containing an ethyl group or an isopropyl group; and the second monomer is at least one of the following:

2. The ArF photoresist composition according to claim 1, wherein The weight ratio of the ArF photoresist resin, the photoacid generator, the quencher and the solvent is 10-20: 0.5～1.5：0.4～0.8：300～500。 3. The ArF photoresist composition of claim 1, wherein The first acid-sensitive monomer is at least one of the following:

4. The ArF photoresist composition of claim 1, wherein The polar monomer is at least one of the following:

5. The ArF photoresist composition of claim 1, wherein The lactone monomer is at least one of the following:

6. The ArF photoresist composition of claim 1, wherein In the preparation of the first resin, a reaction solvent, an initiator, a first acid-sensitive monomer, a polar monomer and a lactone monomer are added to a reaction kettle, and the reaction is carried out at 60-100°C for 6-8 hours.

7. The ArF photoresist composition of claim 1, wherein In the preparation of the second resin, a reaction solvent, an initiator, a second acid-sensitive monomer, a polar monomer and a lactone monomer are added to a reaction kettle, and the reaction is carried out at 60-100°C for 6-8 hours.

8. The ArF photoresist composition according to claim 6 or 7, wherein The molar ratio of the first acid-sensitive monomer or the second acid-sensitive monomer, the polar monomer and the lactone monomer is 35-50:10-25:35-50; The reaction solvent accounts for 20-80% of the weight of the entire reaction system; The initiator is 0.1-5% of the total weight of the three monomers.

9. The ArF photoresist composition of claim 8, wherein The initiator is one or more of azobisisobutyronitrile, azobisisoheptyl nitrile and dimethyl azobis isobutyrate; The photoacid generator is one or more of diazonium salt, sulfonium salt, iodonium salt, sulfonyl diazomethane, imine sulfonate, nitrobenzyl sulfonate and sulfonic oxime ester; The quencher is an amine compound, a sulfonate compound or a carboxylate compound; The reaction solvent is one or more of tetrahydrofuran, propylene glycol methyl ether acetate and propylene glycol methyl ether.

10. A method of forming a lithographic pattern, characterized by, It comprises: coating the ArF photoresist composition as claimed in any one of claims 1-9 on a substrate to form a photoresist layer; exposing the photoresist layer to light using a mask with a predetermined pattern; carrying out post-exposure baking at a temperature of 80-105°C; developing the photoresist layer treated as above in a developing solution to form a photoresist pattern.

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