Composite P-type bismuth telluride-based material and preparation method thereof

By introducing compounds such as Cu2GeSe3, Ag8GeTe6, and Ag5Te3 into p-type bismuth telluride-based materials, the carrier concentration and lattice thermal conductivity were optimized, solving the problem of poor chemical stability of bismuth telluride-based materials and achieving a significant improvement in thermoelectric performance.

CN122003089APending Publication Date: 2026-05-08ZHEJIANG ADVANCED THERMOELECTRIC TECH CO LTD
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Patent Information

Application Number
CN202511974601.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-25
Publication Date
2026-05-08

AI Technical Summary

Technical Problem

Existing bismuth telluride-based thermoelectric materials exhibit poor chemical stability after being combined with metal nanophases, which limits further improvement in thermoelectric performance, and the control of carrier concentration and lattice thermal conductivity is difficult to optimize.

Method used

Compounds such as Cu2GeSe3, Ag8GeTe6, and Ag5Te3 were combined with a p-type bismuth telluride matrix. By introducing grain boundaries and nanophases, phonon scattering was enhanced, carrier concentration was optimized, and lattice thermal conductivity was reduced. The composite material was prepared by powder metallurgy.

Benefits of technology

The Seebeck coefficient and electrical conductivity of the material were significantly improved, the lattice thermal conductivity was reduced, and the zT value was increased by nearly 30%, resulting in a significant improvement in thermoelectric performance.

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Abstract

The invention belongs to the technical field of thermoelectric materials, and provides a composite P-type bismuth telluride-based material and a preparation method thereof in order to improve the thermoelectric performance of the thermoelectric materials, the composite P-type bismuth telluride-based material comprises a P-type bismuth telluride matrix with the chemical formula being Bi < 0.5 > Sb < 1.5 > Te < 3.2 > and a compound used for compounding, the chemical formula of the composite compound is selected from one or more of Cu2GeSe3, Ag8GeTe6 and Ag5Te3, and the chemical formula of the P-type bismuth telluride matrix is Bi < 0.5 > Sb < 1.5 > Te < 3.2 >. And the usage amount of the composite compound is 0.04-0.1% of the mass of the P-type bismuth telluride matrix. According to the P-type bismuth telluride-based composite material provided by the invention, crystal boundary, second phase and other defects are introduced after compounding to enhance phonon scattering, so that the lattice thermal conductivity is effectively reduced, and finally, the improvement of the material performance is realized by optimizing the carrier concentration and reducing the lattice thermal conductivity.
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