Preparation method of solar cell
By fabricating continuous electrode layers and protective layers on solar cells, combined with laser irradiation and etching processes, the problems of high electrode cost, low purity, and high silver consumption in existing technologies have been solved, achieving high-precision electrode patterning and low-cost production.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUHAN DR LASER TECH CORP LTD
- Filing Date
- 2024-11-22
- Publication Date
- 2026-05-22
AI Technical Summary
In the existing technology, the electrode methods for preparing crystalline silicon solar cells are costly, have low metal purity, poor conductivity, and are difficult to meet process requirements. They also consume a lot of silver and the existing electrode materials are difficult to process.
The process involves sequentially fabricating a continuous electrode layer and an electrode protective layer on a semi-finished solar cell, forming a microporous structure through laser irradiation, and selectively removing unwanted metal layers using an etching process to create a patterned electrode structure.
High-precision electrode patterning was achieved, reducing electrode costs and silver consumption. The electrodes also have neat edges, avoiding the risk of leakage and improving production efficiency.
Smart Images
Figure CN122073886A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of photovoltaics, and specifically relates to a method for preparing a solar cell. Background Technology
[0002] In the manufacturing process of crystalline silicon solar cells, there are various metallization methods. One such method involves fabricating an electrode layer and an electrode protective layer on a semi-finished solar cell that has already undergone P-region and / or N-region doping and passivation layer fabrication. Existing technology can fabricate electrode grid lines using photolithography, masking, and etching, but this method is costly and cannot meet the cost and yield requirements of actual production.
[0003] Existing technologies commonly employ screen printing to prepare electrodes, which can create electrode grid lines on the surface of P and N regions. However, this requires the use of fine metal powder mixed with a slurry of complex composition, resulting in low metal purity and poor conductivity in the finished electrode. Furthermore, the thickness of electrodes produced by screen printing is difficult to meet process requirements.
[0004] In addition, since silver is currently the mainstream electrode material, but silver consumption is extremely high, there is an urgent need to use other metal materials in conjunction with other processes to prepare electrodes. Summary of the Invention
[0005] In view of this, this application provides a method for preparing a solar cell, comprising:
[0006] S100. A continuous electrode layer and a continuous electrode protective layer are sequentially prepared on the first side of the semi-finished solar cell; wherein the semi-finished solar cell includes a semiconductor substrate, a semiconductor layer and a passivation layer located on the first side of the semiconductor substrate;
[0007] S200. A continuous metal reaction layer is prepared on the electrode protective layer, wherein the melting point of the metal reaction layer is lower than that of the electrode protective layer;
[0008] S300: A portion of the metal reaction layer and a portion of the electrode protective layer are irradiated with a laser, causing the metal reaction layer and the electrode protective layer in the laser irradiation area to alloy and form a microporous structure; wherein, the laser irradiation area is the area outside the location of the target electrode structure;
[0009] S400, Corrosion: An etchant is used to enter the pores and corrode the electrode layer, so that the electrode layer corresponding to the laser irradiation area in step S300 reacts with the etchant and is removed. The electrode protective layer and the metal reaction layer corresponding to the laser irradiation area are separated from the battery structure, and the electrode protective layer and the electrode layer corresponding to the non-laser irradiation area are retained after corrosion, forming a target electrode structure including a separated positive electrode and / or negative electrode.
[0010] Preferably, in step S100, a portion of the passivation layer in the semi-finished solar cell has an opening that exposes the semiconductor layer, and the opening position of the passivation layer corresponds to the location of the target electrode structure.
[0011] Preferably, the metal reaction layer corresponding to the non-laser irradiated area is retained after corrosion, and the resistivity of the metal reaction layer is less than 12.0 × 10⁻⁶. -8 Ω·m.
[0012] Preferably, the metal reaction layer corresponding to the non-laser irradiated area after corrosion is removed, and the removal method includes:
[0013] The metal reaction layer corresponding to the non-laser irradiated area is removed after reacting with the etching solution used in step S400, or...
[0014] The metal reaction layer corresponding to the non-laser irradiation area does not react with the etching solution used in step S400. After step S400, step S500 is included: using a different etching solution than that used in step S400 to remove the metal reaction layer corresponding to the non-laser irradiation area.
[0015] Preferably, the thickness d of the metal reaction layer B With respect to the thickness d of the electrode protective layer A ratio Satisfies Formula 1:
[0016]
[0017] Where A represents the electrode protective layer, B represents the metal reaction layer, and ρ A ρ represents the density of the electrode protective layer. B M represents the density of the metal reaction layer. A M represents the molar mass of the electrode protective layer. B Represents the molar mass of the metal reaction layer. The ratio of the number of atoms in the metal reaction layer to the number of atoms in the electrode protective layer in the alloy phase diagram;
[0018] The thickness d of the metal reaction layer B With respect to the thickness d of the electrode protective layer A The relationship between them must satisfy:
[0019]
[0020] After deformation, Satisfying Formula 2:
[0021]
[0022] Take the eutectic temperature curves of the metal reaction layer and the electrode protective layer in the alloy phase diagram, and iterate through the atomic percentage of the metal reaction layer from 0% to 100%. Get each position And with that location The corresponding eutectic temperature T AB , for each position With T AB Substituting into Formula 1 and Formula 2 respectively, all equations satisfying the condition P≤Q are... The required scope;
[0023] Finally, based on the known d A d was calculated B Scope;
[0024] Where E represents the laser energy used in step S300, S represents the sample area irradiated by the laser, and C represents the reflectivity of the electrode protective layer at the laser wavelength used in step S300. A R represents the specific heat capacity of the electrode protective layer. B C represents the reflectivity of the metal reaction layer at the laser wavelength used in step S300. B T represents the specific heat capacity of the metal reaction layer. A T represents the melting point of the electrode protective layer. e The ambient temperature.
[0025] Preferably, in step S300, the semi-finished solar cell is heated simultaneously with laser irradiation, and the heating temperature is 300℃~900℃.
[0026] Preferably, the metal reaction layer comprises any one of aluminum, magnesium, zinc, cadmium, and tin, or an alloy containing the same.
[0027] Preferably, the solar cell is a back-contact solar cell, the semiconductor layer includes a first doped semiconductor layer and a second doped semiconductor layer, and the first side of the semi-finished solar cell includes a first semiconductor region and a second semiconductor region arranged in an interdigitated pattern and an isolation region located between adjacent first semiconductor regions and second semiconductor regions; the first doped semiconductor layer is disposed in the first semiconductor region, the second doped semiconductor layer is disposed in the second semiconductor region, and the first doped semiconductor layer and the second doped semiconductor layer have opposite conductivity types.
[0028] Preferably, the laser used in step S300 is a picosecond laser or a femtosecond laser.
[0029] Preferably, the resistivity of the electrode layer is in the range of 1.5 × 10⁻⁶. -8 Ω·m~20.0×10-8 Ω·m; the melting point temperature range of the electrode protective layer is 600℃~3500℃, and the resistivity range is 3.5×10 Ω·m. -8 Ω·m~30.0×10 -8 Ω·m.
[0030] Preferably, the etching solution is an acidic etching solution, the electrode layer comprises any one of copper, aluminum, magnesium, zinc, cadmium, indium, and tin or an alloy thereof, and the electrode protective layer comprises any one of beryllium, molybdenum, tungsten, cobalt, nickel, iron, and platinum or an alloy thereof.
[0031] Preferably, the etchant is an alkaline etchant, and the electrode layer comprises any one of aluminum, beryllium, molybdenum, tungsten, zinc, indium, iron, platinum, and tin or an alloy thereof; the electrode protective layer comprises any one of silver, copper, gold, magnesium, cobalt, nickel, cadmium, molybdenum, tungsten, indium, iron, and platinum or an alloy thereof.
[0032] Preferably, the thickness of the electrode protective layer ranges from 2nm to 200nm.
[0033] Preferably, the thickness of the electrode protective layer ranges from 20 nm to 120 nm.
[0034] Preferably, in step S100, at least a portion of the passivation layer outside the target electrode structure region is a textured structure, or the entire passivation layer is a textured structure.
[0035] Preferably, the solar cell is a back-contact solar cell, the semiconductor layer includes a first doped semiconductor layer and a second doped semiconductor layer, and the first side of the semi-finished solar cell includes a first semiconductor region and a second semiconductor region arranged in an interdigitated pattern and an isolation region located between adjacent first semiconductor regions and second semiconductor regions; the first doped semiconductor layer is disposed in the first semiconductor region, the second doped semiconductor layer is disposed in the second semiconductor region, and the first doped semiconductor layer and the second doped semiconductor layer have opposite conductivity types;
[0036] In step S100, the portion of the passivation layer corresponding to the isolation region has a textured structure, or the portion of the passivation layer outside the target electrode structure region has a textured structure, or the entire passivation layer has a textured structure.
[0037] Preferably, the laser used in step S300 is a pulsed laser or a continuous laser.
[0038] Preferably, in step S200, the method for preparing the continuous electrode layer and the continuous electrode protective layer includes any one of physical vapor deposition, chemical deposition, or electroplating.
[0039] Preferably, in step S400, after the etching is completed, the electrode protective layer that has not been peeled off in the laser irradiation area of the first side of the semi-finished solar cell is cleaned and removed by a brush.
[0040] Alternatively, in step S400, ultrasonic cleaning is used simultaneously with corrosion to assist in the removal of the electrode protective layer corresponding to the laser irradiation area.
[0041] The solar cell fabrication method proposed in this application involves selective laser irradiation combined with an etching process on a continuous electrode layer and a continuous electrode protective layer to create patterned electrodes. This method offers high fabrication precision and causes no damage to the substrate. Furthermore, the resulting metal electrode grid lines have neat edges, eliminating the risk of leakage. In addition, this patented method is applicable to various metal electrode materials, reducing electrode costs and minimizing silver consumption in the photovoltaic industry. Attached Figure Description
[0042] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0043] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size should still fall within the scope of the technical content disclosed in this application, provided that they do not affect the effects and purposes that this application can produce.
[0044] Figure 1 This is a process flow diagram of a method for fabricating a solar cell according to an embodiment of this application;
[0045] Figure 2 This is a schematic diagram of the structure of a semi-finished solar cell according to an embodiment of this application;
[0046] Figure 3 This is a schematic diagram of the battery structure after step S110 is completed in one embodiment of this application.
[0047] Figure 4 This is a schematic diagram of the battery structure after completing step S120 in one embodiment of this application.
[0048] Figure 5 This is a schematic diagram of the battery structure after step S200 is completed according to one embodiment of this application.
[0049] Figure 6 This is a schematic diagram of the battery structure after step S300 is completed in one embodiment of this application.
[0050] Figure 7 This is a schematic diagram of the battery structure after completing step S400 in one embodiment of this application.
[0051] Figure 8 This is a schematic diagram of the structure of a semi-finished solar cell according to another embodiment of this application;
[0052] Figure 9 This is a schematic diagram of the structure of a semi-finished solar cell according to another embodiment of this application;
[0053] Figure 10 This is a schematic diagram of the structure of a semi-finished solar cell according to another embodiment of this application;
[0054] Figure 11 This is a schematic diagram of the structure of a semi-finished solar cell according to another embodiment of this application;
[0055] Figure 12 This is a schematic diagram of the battery structure after step S100 is completed in another embodiment of this application.
[0056] Figure 13 This is a schematic diagram of the battery structure after step S200 is completed in another embodiment of this application.
[0057] Figure 14 This is a schematic diagram of the battery structure after step S300 is completed in another embodiment of this application.
[0058] Figure 15 This is a schematic diagram of the battery structure after step S400 is completed in another embodiment of this application.
[0059] Figure 16 This is the phase diagram for a nickel-tin alloy. Detailed Implementation
[0060] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.
[0061] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, this application will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0062] In existing technologies, silver is commonly used as the electrode material in solar cells, which is costly and global silver reserves are insufficient. Early solar cells used inexpensive and conductive metals such as aluminum as electrode materials, but aluminum is easily oxidized and has poor corrosion resistance. Conductive metals such as nickel are also potential electrode materials due to their oxidation and corrosion resistance, but their high melting points make them difficult to process. This patent combines the characteristics of various electrode materials with a laser-selective irradiation process to form the desired patterned metal electrode through an etching process.
[0063] This invention proposes a method for preparing a solar cell, such as... Figure 1 As shown, the method includes:
[0064] S100. A continuous electrode layer and a continuous electrode protective layer are sequentially prepared on the first side of the semi-finished solar cell. The semi-finished solar cell includes a semiconductor substrate, a semiconductor layer and a passivation layer located on the first side of the semiconductor substrate. Further, a portion of the passivation layer has an opening that exposes the semiconductor layer. The opening position of the passivation layer corresponds to the location range of the target electrode structure. The target electrode structure is the electrode structure prepared on the final solar cell, which includes separate positive and / or negative electrodes. The target electrode structure and its position pattern are conventional electrode structures in existing solar cells and will not be described in detail here. Specifically, it can be considered that a continuous electrode layer and a continuous electrode protective layer are sequentially prepared on the surface of the passivation layer on the first side, while the electrode layer prepared at the opening position of the passivation layer is directly prepared on the surface of the semiconductor layer.
[0065] S200. A continuous metal reaction layer is prepared on the electrode protective layer, wherein the melting point of the metal reaction layer is lower than that of the electrode protective layer.
[0066] S300: A portion of the metal reaction layer and a portion of the electrode protective layer are irradiated with a laser, causing the metal reaction layer and the electrode protective layer in the laser irradiation area to alloy and form a microporous structure; wherein, the laser irradiation area is the area outside the location of the target electrode structure;
[0067] S400, Etching: An etchant is used to enter the pores to etch the electrode layer, so that the electrode layer corresponding to the laser irradiation area in step S300 reacts with the etchant and is removed. The electrode protective layer and the metal reaction layer corresponding to the laser irradiation area are separated from the battery structure, and the electrode protective layer and the electrode layer corresponding to the non-laser irradiation area are retained after etching, forming a target electrode structure including a separated positive electrode and / or negative electrode.
[0068] The solar cell fabrication method proposed in this patent involves selective laser irradiation combined with an etching process on a continuous electrode layer and a continuous electrode protective layer to create patterned electrodes. This method offers high precision and causes no damage to the substrate. Furthermore, the resulting metal electrode grid lines have neat edges, eliminating the risk of leakage. In addition, this patented method is applicable to various metal electrode materials, reducing electrode costs and minimizing silver consumption in the photovoltaic industry.
[0069] Furthermore, since the metal reaction layer has a lower melting point than the electrode protective layer, when the laser irradiates the metal reaction layer and the electrode protective layer, the eutectic point of the alloy formed by the metal reaction layer and the electrode protective layer is lower than the melting point of the electrode protective layer. Therefore, the presence of the metal reaction layer is conducive to the formation of micropore structure in the electrode protective layer. With the metal reaction layer, laser irradiation causes the metal reaction layer and the electrode protective layer to alloy, resulting in more pores and deeper pores. This allows the corrosive liquid to penetrate and corrode the electrode layer more easily, and the electrode protective layer is easier to completely detach after corrosion. In addition, more incident laser light can be absorbed, improving the utilization rate of laser energy and significantly increasing production efficiency.
[0070] The semiconductor substrate has a front (light-facing) and a back (light-reflecting) side. This solar cell can be a bifacial electrode cell, such as a TOPCON cell, or a back-contact cell, such as a BC cell. When it is a bifacial electrode cell, the first side can be either the front or back side of the cell; when it is a back-contact cell, the first side is the back side. When it is a TOPCON cell, the semiconductor layer can be phosphorus- or boron-doped amorphous silicon and / or microcrystalline silicon, or phosphorus- or boron-doped crystalline silicon. For a back-contact cell, the specific semiconductor layer structure is described in detail below.
[0071] In step S300, the size range of the laser-irradiated area depends on the final desired size of the electrode layer and electrode protective layer.
[0072] As another embodiment, the metal reaction layer includes any one of aluminum, magnesium, zinc, cadmium, and tin, or an alloy thereof.
[0073] It should be noted that whether or not the metal reaction layer corresponding to the non-laser irradiated area is retained can be chosen according to actual needs; that is, it can be either retained or removed.
[0074] Specifically, when the metal reaction layer corresponding to the non-laser irradiated area is retained after corrosion, preferably the resistivity of the metal reaction layer is less than 12.0 × 10⁻⁶. -8 Metals with a resistivity of Ω·m are more conducive to the performance of solar cells, and the process steps are simple in this embodiment.
[0075] Specifically, as another embodiment, the removal of the metal reaction layer corresponding to the non-laser irradiated area after etching can be achieved using two methods. First, the metal reaction layer corresponding to the non-laser irradiated area is directly removed after reacting with the etching solution used in step S400; in this case, the etching solution used in step S400 is sufficient. Second, if the metal reaction layer corresponding to the non-laser irradiated area does not react with the etching solution used in step S400, then step S500 should be included after step S400: using a different etching solution than that used in step S400 to remove the metal reaction layer corresponding to the non-laser irradiated area.
[0076] As another embodiment, the thickness of the metal reaction layer can be set according to the thickness of the electrode protective layer and the alloy phase diagram of the two metals. Specifically, the thickness d of the metal reaction layer... B With respect to the thickness d of the electrode protective layer A ratio Satisfies Formula 1:
[0077] Where A represents the electrode protective layer, B represents the metal reaction layer, and ρ A ρ represents the density of the electrode protective layer. B M represents the density of the metal reaction layer. A M represents the molar mass of the electrode protective layer. B Represents the molar mass of the metal reaction layer. This represents the ratio of the number of atoms in the metal reaction layer to the number of atoms in the electrode protective layer in the alloy phase diagram.
[0078] The thickness d of the metal reaction layer B With respect to the thickness d of the electrode protective layer A The relationship between them must satisfy the following formula:
[0079]
[0080] This ensures the full utilization of laser energy. The formula takes into account the energy loss caused by the metal reaction layer, allowing for more precise selection of the metal reaction layer thickness. This represents the temperature rise per unit thickness of the electrode protective layer when there is no metal reaction layer. This represents the temperature rise ratio per unit thickness of the alloy of the metal reaction layer and the electrode protective layer when a metal reaction layer is present. The thickness d of the metal reaction layer... B With respect to the thickness d of the electrode protective layer A Once this general formula is satisfied, the metal reaction layer and the electrode protective layer can be successfully alloyed after laser irradiation.
[0081] The above formula is obtained by transformation. Satisfying Formula 2:
[0082] Take the eutectic temperature curves of the metal reaction layer and the electrode protective layer in the alloy phase diagram, and iterate through the atomic percentage of the metal reaction layer from 0% to 100%. Get each position And with that location The corresponding eutectic temperature T AB , for each position With T AB Substituting into Formula 1 and Formula 2 respectively, all equations satisfying the condition P≤Q are... The required scope;
[0083] Finally, based on the known d A d was calculated B ;
[0084] Where E represents the laser energy used in step S300, S represents the sample area irradiated by the laser, and C represents the reflectivity of the electrode protective layer at the laser wavelength used in step S300. A R represents the specific heat capacity of the electrode protective layer. B C represents the reflectivity of the metal reaction layer at the laser wavelength used in step S300. B T represents the specific heat capacity of the metal reaction layer. A T represents the melting point of the electrode protective layer. e The ambient temperature.
[0085] The above method can be used to obtain a suitable range of ratios between the thickness of the metal reaction layer and the thickness of the electrode protective layer. Then, based on the thickness of the electrode protective layer, the appropriate thickness of the metal reaction layer can be obtained.
[0086] The following example uses nickel as the electrode protective layer and bismuth as the metal reaction layer to illustrate the calculation process for the thickness of the metal reaction layer, with an ambient temperature T. e =25℃. See details. Figure 16 The nickel-tin alloy phase diagram shown has atomic percentages reduced for ease of calculation. The curve is divided into three parts according to the trend of the eutectic temperature of tin and nickel: (0, 19%), (19%, 41%), and (41%, 100%). This is based on the atomic ratio of tin to nickel. The thickness ratio of tin to nickel can be calculated. The density ρ of tin Sn =7.3g / cm 3 The relative molecular mass M of tin Sn =118.71 g / mol, the density ρ of nickel Ni =8.902g / cm 3 The relative molecular mass M of nickelNi = 58.69 g / mol. Taking the processing of an infrared laser with a wavelength of 1064 nm as an example, the reflectivity R of nickel for this wavelength laser is... Ni =0.865, specific heat capacity C Ni = 0.447 kJ·kg -1 ·K -1 The reflectivity R of tin Sn =0.816, specific heat capacity C Sn =0.228 kJ·kg -1 ·K -1 .
[0087] For interval 1 (0, 19%), with thickness ratio The temperature gradually increases from 0 to 0.58, with the eutectic temperature T... AB The temperature was gradually decreased from 1453℃ to 1130℃. Under this eutectic temperature condition, the values were substituted into the formula. The value gradually increases from 0.87 to 1.12, therefore, within interval one, every point satisfies P≤Q, thus obtaining the satisfied condition.
[0088] For interval two (19%, 41%), with thickness ratio The eutectic temperature T gradually increased from 0.58 to 1.71. AB The temperature is gradually increased from 1130℃ to 1260℃. Under this eutectic temperature condition, substituting into the formula... The value gradually decreases from 1.12 to 1.00, therefore, within interval two, the thicker portion does not satisfy P≤Q. A point of 30% can be found within the interval, yielding... T AB The temperature is 1210℃, corresponding to Q = 1.05. Based on the trend of P and Q, this is the maximum P value that satisfies P ≤ Q. Therefore, the condition that is met is...
[0089] For interval three (41%, 100%), with thickness ratio The eutectic temperature T gradually increases from 1.71 to +∞. AB The temperature is gradually decreased from 1260℃ to 231℃. Under this eutectic temperature condition, the values are substituted into the formula. As the values of P and Q gradually increased from 1.00 to 6.02, there was no case where P ≤ Q during the individual increases. Therefore, there was no thickness ratio that met the requirements in interval three.
[0090] In summary, the required thickness is as follows:
[0091] In another embodiment, in step S300, the semi-finished solar cell is heated simultaneously with laser irradiation to a temperature of 300°C to 900°C, thereby reducing the required laser energy. The heating method is not limited; for example, the cell can be placed on a heating platform, which provides the cell with a heating temperature of 300°C to 900°C. Heating the semi-finished solar cell actually changes the ambient temperature T. e Increase T e It will make T A -T e or T AB -T e Reducing the required laser energy E improves production efficiency or enhances the hole-forming effect under the same laser energy conditions, such as the number of holes and hole depth.
[0092] Example 1 (The solar cell is a back-contact solar cell)
[0093] S100. A continuous electrode layer 6 and a continuous electrode protective layer 7 are sequentially prepared on the first side of the semi-finished solar cell. The semi-finished solar cell includes a semiconductor substrate 1, a semiconductor layer and a passivation layer 4 located on the first side of the semiconductor substrate 1. A portion of the passivation layer 4 is open to expose the semiconductor layer. The opening position of the passivation layer 4 corresponds to the location of the target electrode structure. The opening area also corresponds to the electrode connection area. The electrode layer 6 in the electrode connection area is in direct contact with the semiconductor layer.
[0094] More specifically, step S100 includes:
[0095] S110, an opening is made in the passivation layer 4 on the back of the semi-finished solar cell, such as... Figure 3 As shown, the opening area of the passivation layer 4 corresponds to the alternately arranged first electrode connection area D and second electrode connection area E. In this embodiment, the solar cell is a back-contact solar cell, with the first side being the back of the cell. The first electrode connection area D and the second electrode connection area E together correspond to the electrode connection area. The area on the passivation layer 4 other than the first electrode connection area D and the second electrode connection area E is called the non-electrode connection area. The first electrode connection area D and the second electrode connection area E are the locations of the final first and second electrodes, which are the positive and negative electrodes of the solar cell.
[0096] Among them, such as Figure 2The diagram shown is a schematic diagram of a semi-finished solar cell with an unopened passivation layer 4 according to an embodiment of this application. More specifically, the semi-finished solar cell includes a semiconductor substrate 1, a first doped semiconductor layer 2, and a second doped semiconductor layer 3. The semiconductor substrate 1 has a front side and a back side. The back side, also known as the first side, includes a first semiconductor region A and a second semiconductor region B arranged in an interdigitated pattern, and an isolation region C located between adjacent first semiconductor regions A and second semiconductor regions B. The first doped semiconductor layer 2 is disposed in the first semiconductor region A, and the second doped semiconductor layer 3 is disposed in the second semiconductor region B. The first doped semiconductor layer 2 and the second doped semiconductor layer 3 have opposite conductivity types. The opening area of the passivation layer 4 is located within the range of the first semiconductor region A and the second semiconductor region B, and the non-opening area of the passivation layer 4 is continuous. The passivation layer 4 covers the first semiconductor region A, the second semiconductor region B, and the isolation region C. The first electrode connection region D is located in the first semiconductor region A, and the second electrode connection region E is located in the second semiconductor region B. The first doped semiconductor layer 2 and the second doped semiconductor layer 3 arranged in an interdigitated pattern together constitute a semiconductor layer. The first electrode connection region D exposes the first doped semiconductor layer 2, and the second electrode connection region E exposes the second doped semiconductor layer 3.
[0097] There are multiple first semiconductor regions A and multiple second semiconductor regions B, such as Figure 2 As shown, the first semiconductor region A and the second semiconductor region B can also be considered as arranged in an interdigitated pattern along the X direction in the figure, with the first semiconductor region A and the second semiconductor region B spaced apart. The isolation region C is the area between the first semiconductor region A and the second semiconductor region B. Generally, the semi-finished solar cell also includes at least a first passivation layer disposed in the first semiconductor region A and a second passivation layer disposed in the second semiconductor region B. The first passivation layer and the first doped semiconductor layer 2 are arranged sequentially along the direction away from the semiconductor substrate 1, and the second passivation layer and the second doped semiconductor layer 3 are arranged sequentially along the direction away from the semiconductor substrate 1.
[0098] The semiconductor substrate 1 may include materials such as monocrystalline silicon, germanium, or gallium arsenide. The specific materials and fabrication methods of the first doped semiconductor layer 2 and the second doped semiconductor layer 3 depend on the specific structure of the back-contact solar cell, such as a TBC cell, an HBC cell, or an HTBC cell containing both TOPCON and HJT structures. When it is an HBC cell, the first doped semiconductor layer 2 may be phosphorus-doped amorphous silicon and / or microcrystalline silicon, and the second doped semiconductor layer 3 may be boron-doped amorphous silicon and / or microcrystalline silicon. The first passivation layer and the second passivation layer include intrinsic amorphous silicon. The passivation layer 4 may be a transparent conductive layer, such as at least one of indium tin oxide, zinc aluminum oxide, indium hydroxide, and indium tungsten oxide.
[0099] It should be noted that although the back contact battery structure in this patent example is based on a back side including a first semiconductor region A and a second semiconductor region B arranged in an interdigitated pattern and an isolation region C located between adjacent first semiconductor regions A and second semiconductor regions B, the back contact battery is not limited to this structure, and other back contact batteries are also within the scope of protection of this patent.
[0100] This application uses a TBC battery as an example for illustration. In this case, the first passivation layer and the second passivation layer are tunneling oxide 5, the first doped semiconductor layer 2 and the second doped semiconductor layer 3 can each be one of phosphorus-doped polycrystalline silicon and boron-doped polycrystalline silicon, and the passivation layer 4 can be silicon nitride.
[0101] like Figure 3 The diagram shown is a schematic representation of the battery structure after step S110 in one embodiment of this application. There are many ways to open the passivation layer 4 on the back of the semi-finished solar cell, such as laser removal or photolithography. Preferably, laser irradiation is used to connect the first electrode connection area D and the second electrode connection area E, which is more precise and simpler. How to obtain the partially open passivation film 4 is not the focus of this patent; it is sufficient to prepare a semi-finished solar cell with this structure to facilitate the following step S120.
[0102] S120. A continuous electrode layer 6 and a continuous electrode protective layer 7 are sequentially prepared on the passivation film 4, which includes the opening region.
[0103] Specifically, such as Figure 4 The diagram shown is a schematic representation of the battery structure after step S120 is completed in one embodiment of this application.
[0104] Furthermore, the methods for preparing electrode layer 6 and electrode protective layer 7 include any one of physical vapor deposition, chemical deposition, or electroplating. Physical vapor deposition methods include evaporation, sputtering, arc plasma deposition, ion plating, and molecular beam epitaxy. Using these methods, metal layers of arbitrary thickness can be prepared with uniform thickness, good contact, and high matching degree. Even on uneven battery surfaces, the metal layer and substrate can be completely bonded without voids. Moreover, the metal electrode has good conductivity, neat edges, and no risk of leakage.
[0105] Furthermore, the electrode layer 6 and electrode protective layer 7 prepared on the surface of the passivation layer 4 using the above preparation method are both continuous. "Continuous" means that the area of the electrode layer 6 and electrode protective layer 7 covers the entire area on the back of the back contact battery where the electrode needs to be made.
[0106] Furthermore, electrode layer 6 is made of a metal with good conductivity and relatively poor corrosion resistance, with a resistivity range of 1.5 × 10⁻⁶. -8Ω·m~20.0×10 -8 The electrode layer 6 is preferably made of a readily available and inexpensive metal with good electrical conductivity (Ω·m). The electrode protective layer 7 is made of a corrosion-resistant and oxidation-resistant metal with a melting point range of 600℃ to 3500℃ and a resistivity range of 3.5 × 10⁻⁶ Ω·m. -8 Ω·m~30.0×10 -8 Ω·m. That is, the electrode protective layer 7 must be both corrosion-resistant and have a certain degree of conductivity. After completing the selective laser irradiation in step S300 and the corrosion in step S400, the electrode protective layer 7 is still retained in the non-laser irradiated areas to protect the electrode layer 6 from oxidation or corrosion.
[0107] The electrode layer 6 and electrode protective layer 7 can be made of a variety of materials, depending on the type of etching solution used. For example, when the etching solution is acidic, the electrode layer 6 can include any one of copper, aluminum, magnesium, zinc, cadmium, indium, and tin, or alloys containing these metals, such as brass or copper-tin alloys. These metals not only have good electrical conductivity but are also inexpensive. The electrode protective layer 7 can include any one of beryllium, molybdenum, tungsten, cobalt, nickel, iron, and platinum, or alloys containing these metals, such as nickel-cobalt alloys or tungsten steel. These metals are not easily oxidized and can effectively protect the electrode layer from oxidation or corrosion.
[0108] When the etchant is alkaline, electrode layer 6 comprises any one of aluminum, beryllium, molybdenum, tungsten, zinc, indium, iron, platinum, and tin, or an alloy containing them, such as an aluminum-copper-magnesium alloy, preferably aluminum, beryllium, zinc, or tin; electrode protective layer 7 comprises any one of silver, copper, gold, magnesium, cobalt, nickel, cadmium, molybdenum, tungsten, indium, iron, and platinum, or an alloy containing them, such as brass, preferably copper, magnesium, cobalt, nickel, or cadmium. Further, the thickness of the electrode layer ranges from 0.1 μm to 30 μm, and the thickness of the electrode protective layer 7 ranges from 2 nm to 200 nm. Within this thickness range, the electrode protective layer 7 can absorb most of the incoming laser energy. When the electrode protective layer is less than 2 nm, the thickness is insufficient to absorb laser energy and cannot provide adequate protection; when the thickness of the electrode protective layer is greater than 200 nm, high electrical loss leads to reduced battery efficiency, and the high energy required for the laser process results in energy waste and reduced production efficiency. Preferably, the thickness of the electrode protective layer 7 is in the range of 20nm to 120nm. Within this range, the laser absorption performance and protective performance of the electrode protective layer 7 are optimal.
[0109] The electrode layer 6 remaining after corrosion and the electrode protective layer 7 together constitute the first electrode and the second electrode of this patent. This can achieve good conductivity of the battery electrode and avoid easy oxidation. Moreover, the choice of materials for both facilitates the patterning of the electrode by combining selective laser irradiation and corrosion.
[0110] S200. A continuous metal reaction layer 8 is prepared on the electrode protective layer 7, wherein the melting point of the metal reaction layer 8 is lower than that of the electrode protective layer 7.
[0111] Among them, such as Figure 5 The diagram shown is a schematic representation of the battery structure after step S200 is completed in one embodiment of this application.
[0112] The method for preparing the metal reaction layer 8 may also include any one of physical vapor deposition, chemical deposition, or electroplating.
[0113] S300, a portion of the metal reaction layer 8 and a portion of the electrode protective layer 7 are irradiated with a laser to alloy the metal reaction layer 8 and the electrode protective layer 7 in the laser irradiation area F and form a micro-pore structure; wherein, the laser irradiation area F is the area outside the location of the target electrode structure; at this time, the laser irradiation area is the isolation area C and a portion of the first semiconductor area A and a portion of the second semiconductor area B near the isolation area C.
[0114] Specifically, the size range of the portion of the first semiconductor region A and the portion of the second semiconductor region B near the isolation region C depends on the size of the electrode layer 6 and the electrode protective layer 7 that are ultimately expected to be retained in the first electrode connection region D and the second electrode connection region E in the X direction, for example, 40 μm to 160 μm. Within this range, the electrode layer 6 and the electrode protective layer 7 are wide enough to ensure a small resistance, and not so wide that the ambient light received on the back side is blocked by the electrodes, thereby reducing the bifaciality.
[0115] Among them, such as Figure 6 The diagram shown is a schematic representation of the battery structure after step S300 is completed in one embodiment of this application.
[0116] Laser irradiation can alloy the metal reactive layer 8 and electrode protective layer 7, forming a microporous structure. This microporous structure formed in the alloyed metal reactive layer 8 and electrode protective layer 7 is a laser-induced periodic surface structure (LIPSS or ripples), possessing both near-wavelength (micrometer or submicrometer) low spatial frequency (LSFL) structure and nanometer-scale high spatial frequency (HSFL) structure. This structure is typically obtained through a multi-pulse laser process, gradually forming as laser pulses are successively superimposed, and the resulting microporous structure tends to be honeycomb-like. Both incomplete and complete structures obtained using this phenomenon can induce ultrafine pores in nanometer-thick metal films, thereby connecting with the underlying structure.
[0117] In step S300, the laser used is a picosecond laser or a femtosecond laser, that is, the laser used in this patent is a laser with a pulse width in the ps or fs range.
[0118] S400, Etching: An etchant is used to enter the pores and etch the electrode layer 6, so that the electrode layer 6 corresponding to the laser irradiation area F in step S300 is removed after reacting with the etchant. The electrode protective layer 7 and the metal reaction layer 8 corresponding to the laser irradiation area F are separated from the battery structure. After etching, the electrode protective layer 7 and the electrode layer 6 corresponding to the non-laser irradiation area are retained, forming a target electrode structure including a separated positive electrode and a negative electrode. The positive electrode and the negative electrode are the first electrode and the second electrode mentioned above. The first electrode is one of the positive electrode and the negative electrode, and the second electrode is the other of the positive electrode and the negative electrode.
[0119] Specifically, such as Figure 7 The diagram shown is a schematic representation of the battery structure after step S400 in one embodiment of this application. In this embodiment, the metal reaction layer 8 in the non-laser irradiation area is also removed.
[0120] After the etchant enters the micropore structure corresponding to the laser irradiation area F, it erodes the underlying electrode layer 6. After etching, the electrode layer 6 corresponding to the laser irradiation area F is removed, and the electrode protective layer 7 and the metal reaction layer 8 corresponding to the laser irradiation area F are peeled off. That is, in step 300, the electrode layer 6 and electrode protective layer 7 in the laser irradiation area F are completely removed, while the electrode layer 6 and electrode protective layer 7 in the non-laser irradiation area are retained. The electrode layer 6 and electrode protective layer 7 retained in the first semiconductor region A constitute the first electrode, and the electrode layer 6 and electrode protective layer 7 retained in the second semiconductor region B constitute the second electrode.
[0121] The etching solution used during etching, which reacts with electrode layer 6, can be either acidic or alkaline. Acidic etching solutions can be any one of dilute hydrochloric acid, dilute nitric acid, or dilute sulfuric acid, or a mixture thereof, or a mixture including these acids. They can also be non-oxidizing concentrated acids, such as concentrated hydrochloric acid. Alkaline etching solutions include alkaline aqueous solutions with sodium hydroxide or potassium hydroxide as the main solute.
[0122] In this case, the metal reaction layer corresponding to the non-laser irradiated area after corrosion can be either retained or removed. When retained, the resistivity of the metal reaction layer is less than 12.0 × 10⁻⁶. -8Ω·m. When selecting a removal method, considering that some electrode layers 6 can be corroded by acidic solutions and others by alkaline solutions, the corrosion process can take several forms. For example, in the first case, an acidic corrosive solution is used, and both electrode layer 6 and the metal reaction layer 8 can react with this acidic solution. In this case, the metal reaction layer 8 corresponding to the non-laser irradiation area is directly removed by reacting with the acidic solution. In the second case, an alkaline corrosive solution is used, and both electrode layer 6 and the metal reaction layer 8 can react with this alkaline solution. In this case, the metal reaction layer 8 corresponding to the non-laser irradiation area is directly removed by reacting with the alkaline solution. And in the third case, the corrosive solution... In one method, an acidic etching solution is used. The electrode layer 6 reacts with the acidic etching solution, while the metal reaction layer 8 does not react with it. Following step S400, step S500 is added: an alkaline etching solution, different from that used in step S400, is applied to the metal reaction layer 8 corresponding to the non-laser irradiation area to remove it. Alternatively, in a fourth method, an alkaline etching solution is used. The electrode layer 6 reacts with the alkaline etching solution, while the metal reaction layer 8 does not react with it. Following step S400, step S500 is added: an acidic etching solution, different from that used in step S400, is applied to the metal reaction layer 8 corresponding to the non-laser irradiation area to remove it. In practice, a suitable etching scheme can be selected based on whether to retain the metal reaction layer 8 corresponding to the non-laser irradiation area and the electrode layer 6 and metal reaction layer used.
[0123] Furthermore, if necessary, ultrasonic cleaning can be used during corrosion to assist in peeling off the electrode protective layer 7 corresponding to the laser irradiation area F. Alternatively, after corrosion, the electrode protective layer 7 that has not been peeled off in the laser irradiation area F on the back of the semi-finished solar cell can be cleaned and removed with a brush. This helps to completely remove the electrode layer 6 and electrode protective layer 7 in the laser irradiation area F.
[0124] Example 2 (The solar cell is a bifacial electrode cell)
[0125] Let's take TOPCON batteries as an example.
[0126] S100. A continuous electrode layer 6 and a continuous electrode protective layer 7 are sequentially prepared on the first side of the semi-finished solar cell. The semi-finished solar cell includes a semiconductor substrate 1, a semiconductor layer and a passivation layer 4 located on the first side of the semiconductor substrate 1. A portion of the passivation layer 4 is open to expose the semiconductor layer, and the opening position of the passivation layer 4 corresponds to the location of the target electrode structure.
[0127] like Figure 11The diagram shown is a schematic representation of the structure of a semi-finished TOPCON solar cell according to another embodiment of this application. In this case, it is assumed that the first side is the back side of the TOPCON cell, and the semiconductor layer is phosphorus-doped amorphous silicon and / or microcrystalline silicon, or boron-doped amorphous silicon and / or microcrystalline silicon; the passivation layer 4 covers the back semiconductor layer. The back side of the semi-finished TOPCON cell also includes a tunneling oxide layer disposed between the semiconductor substrate 1 and the semiconductor layer. Figure 11 The drawing is shown but not labeled. The material selection and preparation methods for electrode layer 6 and electrode protective layer 7 can refer to Example 1, such as... Figure 12 The diagram shown is a schematic of the battery structure after completing step S100 in this embodiment.
[0128] S200. A continuous metal reaction layer 8 is prepared on the electrode protective layer 7, wherein the melting point of the metal reaction layer 8 is lower than that of the electrode protective layer 7.
[0129] like Figure 13 The diagram shown is a schematic representation of the battery structure after step S200 is completed in one embodiment of this application.
[0130] S300, a portion of the metal reaction layer 8 and electrode protective layer 7 are irradiated with a laser, causing the metal reaction layer 8 and electrode protective layer 7 in the laser irradiation area F to alloy and form a microporous structure; wherein, the laser irradiation area is the area outside the location of the target electrode structure; for example... Figure 14 The diagram shown is a schematic of the battery structure after completing step S300 in this embodiment.
[0131] The laser used for laser irradiation is also a picosecond laser or a femtosecond laser. Similarly, the size of at least part of the non-opening area irradiated by the laser depends on the size of the electrode layer 6 and the electrode protective layer 7 that are ultimately expected to be retained. This size range is wide enough to ensure low resistance, but not so wide that it would block the ambient light received on the back side, thereby reducing the bifaciality.
[0132] S400, Etching: An etching solution is used to penetrate the pores and etch the electrode layer 6. This removes the electrode layer 6 corresponding to the laser irradiation area F from step S300 after reacting with the etching solution. The electrode protective layer 7 and the metal reaction layer 8 corresponding to the laser irradiation area F are peeled off. After etching, the electrode protective layer 7 and the electrode layer 6 corresponding to the non-laser irradiation area remain, forming a target electrode structure including a separated positive or negative electrode. The etching method can also refer to Example 1. Figure 15 The diagram shown is a schematic of the battery structure after completing step S400 in this embodiment.
[0133] As another embodiment, considering that when the surface of the electrode protective layer 7 is smooth, the reflectivity to laser is high and the light utilization rate is low; furthermore, in order to make the electrode protective layer 7 have oxidation resistance, the melting point of the electrode protective layer 7 is generally high, for example, the melting point of Ni reaches 1453°C. Therefore, in step S100, at least a portion of the passivation layer outside the target electrode structure region is a textured structure. That is, the portion of the passivation layer outside the target structure region can be entirely textured, or a portion of the portion outside the target structure region can be textured, or the entire passivation layer 4 can be textured. Specifically, the textured structure can be formed, for example, by laser irradiation at the corresponding location on the silicon substrate to form a textured structure, and then the corresponding region is textured when the passivation layer 4 is fabricated in the subsequent step. Of course, other methods can also be used.
[0134] Furthermore, when the solar cell is a back-contact solar cell, the semiconductor layer includes a first doped semiconductor layer 2 and a second doped semiconductor layer 3. The first side of the semi-finished solar cell includes a first semiconductor region A and a second semiconductor region B arranged in an interdigitated pattern, and an isolation region C located between adjacent first semiconductor regions A and second semiconductor regions B. The first doped semiconductor layer 2 is disposed in the first semiconductor region A, and the second doped semiconductor layer 3 is disposed in the second semiconductor region B, and the conductivity types of the first doped semiconductor layer 2 and the second doped semiconductor layer 3 are opposite. The opening region of the passivation layer 4 is located within the range of the first semiconductor region A and the second semiconductor region B, and the non-opening region of the passivation layer 4 is continuous. The isolation region C is located within the non-opening region of the passivation layer 4. At this time, the part of the passivation layer 4 corresponding to the isolation region C in the cell structure is a textured structure, or the part of the passivation layer 4 outside the target electrode structure region is a textured structure, or the entire passivation layer 4 is a textured structure. In this way, the light-trapping effect of the textured structure can be used to make the incident laser absorb and reflect multiple times, improve the utilization rate of laser energy, thereby reducing the energy consumption of the laser and greatly reducing the cost.
[0135] More specifically, such as Figure 8 , Figure 9 and Figure 10 The diagram shown is a schematic representation of a semi-finished solar cell with a passivation layer according to another embodiment of this application. Figure 7 The portion of the intermediate passivation layer corresponding to isolation region C has a textured surface. Figure 8 The portion of the passivation layer other than the positive and negative electrodes has a textured surface. Figure 9The first semiconductor region A, the second semiconductor region B, and the isolation region C all have textured structures. These textured structures can improve the utilization rate of laser energy. Regarding the formation of the textured structures, for example, the textured structures corresponding to the first semiconductor region A and the second semiconductor region B corresponding to the passivation layer 4 can be obtained during the preparation of the first semiconductor region A and the second semiconductor region B, or the textured structure can be formed on the semiconductor substrate 1, and then the first semiconductor region A and the second semiconductor region B can be prepared on it. The textured structure of the isolation region C can be obtained during the fabrication of the isolation region C. Considering that the focus of this patent is that the textured structure is already present before the laser irradiation electrode protective layer 7, and how the textured structure is prepared is not the focus of this application, it will not be elaborated here.
[0136] Furthermore, the applicant's research found that when at least a portion of the passivation layer 4 outside the target electrode structure region is a textured structure, or when the entire passivation layer 4 is a textured structure, the pyramidal tips of the textured surface have a tip effect. Under the action of the laser photoelectric field, the air at the tip generates plasma, which improves the absorption efficiency of laser energy in this region and reduces the requirement for laser peak power. Moreover, an uneven thermal field is generated under textured conditions, causing the metal protective layer to tear and form tiny gaps. In this case, the laser used in step S200 can be either a continuous laser or a pulsed laser. When using a pulsed laser, a picosecond laser, a femtosecond laser, or a nanosecond laser can be used.
[0137] Furthermore, this patent also compares the laser processing energy consumption with and without a velvety surface. When there is no velvety surface, the required laser energy consumption using a green leather laser reaches 2051.28 mJ / cm². 2 The above. Furthermore, when using a textured surface, laser energy consumption across multiple wavelengths is significantly reduced, reaching as low as 80 mJ / cm². 2 the following.
[0138] Furthermore, the thickness of the semiconductor substrate 1 is 110 μm to 165 μm. This thickness range is beneficial for maximizing the absorption of sunlight while maintaining low cost; it also helps reduce the distance that carriers generated by light travel in the silicon substrate, thereby reducing bulk recombination.
[0139] The various embodiments in this specification are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. For the apparatuses disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and relevant parts can be referred to the method section.
[0140] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A method for preparing a solar cell, characterized in that, include: S100. A continuous electrode layer and a continuous electrode protective layer are sequentially prepared on the first side of the semi-finished solar cell; wherein the semi-finished solar cell includes a semiconductor substrate, a semiconductor layer and a passivation layer located on the first side of the semiconductor substrate; S200. A continuous metal reaction layer is prepared on the electrode protective layer, wherein the melting point of the metal reaction layer is lower than that of the electrode protective layer; S300: A portion of the metal reaction layer and a portion of the electrode protective layer are irradiated with a laser, causing the metal reaction layer and the electrode protective layer in the laser irradiation area to alloy and form a microporous structure; wherein, the laser irradiation area is the area outside the location of the target electrode structure; S400, Corrosion: An etchant is used to enter the pores and corrode the electrode layer, so that the electrode layer corresponding to the laser irradiation area in step S300 is removed after reacting with the etchant. The electrode protective layer corresponding to the laser irradiation area is separated from the metal reaction layer, and the electrode protective layer and electrode layer corresponding to the non-laser irradiation area are retained after corrosion, forming a target electrode structure including a separated positive electrode and / or negative electrode.
2. The method for preparing a solar cell according to claim 1, characterized in that, In step S100, a portion of the passivation layer in the semi-finished solar cell has an opening that exposes the semiconductor layer, and the opening position of the passivation layer corresponds to the location of the target electrode structure.
3. The method for preparing a solar cell according to claim 1, characterized in that, The metal reaction layer corresponding to the non-laser irradiated area is retained after corrosion, and the resistivity of the metal reaction layer is less than 12.0 × 10⁻⁶. -8 Ω·m.
4. The method for preparing a solar cell according to claim 1, characterized in that, The metal reaction layer corresponding to the non-laser irradiated area after corrosion is removed. The removal methods include: The metal reaction layer corresponding to the non-laser irradiated area is removed after reacting with the etching solution used in step S400, or... The metal reaction layer corresponding to the non-laser irradiation area does not react with the etching solution used in step S400. After step S400, step S500 is included: using a different etching solution than that used in step S400 to remove the metal reaction layer corresponding to the non-laser irradiation area.
5. The method for preparing a solar cell according to claim 1, characterized in that, The thickness d of the metal reaction layer B With respect to the thickness d of the electrode protective layer A ratio Satisfies Formula 1: Where A represents the electrode protective layer, B represents the metal reaction layer, and ρ A ρ represents the density of the electrode protective layer. B M represents the density of the metal reaction layer. A M represents the molar mass of the electrode protective layer. B Represents the molar mass of the metal reaction layer. The ratio of the number of atoms in the metal reaction layer to the number of atoms in the electrode protective layer in the alloy phase diagram; The thickness d of the metal reaction layer B With respect to the thickness d of the electrode protective layer A The relationship between them must satisfy: After deformation, Satisfying Formula 2: Take the eutectic temperature curves of the metal reaction layer and the electrode protective layer in the alloy phase diagram, and iterate through the atomic percentage of the metal reaction layer from 0% to 100%. Get each position And with that location The corresponding eutectic temperature T AB , for each position With T AB Substituting into Formula 1 and Formula 2 respectively, all equations satisfying the condition P≤Q are... The required scope; Finally, based on the known d A d was calculated B Scope; Where E represents the laser energy used in step S300, S represents the sample area irradiated by the laser, and R... A C represents the reflectivity of the electrode protective layer at the laser wavelength used in step S300. A R represents the specific heat capacity of the electrode protective layer. B C represents the reflectivity of the metal reaction layer at the laser wavelength used in step S300. B T represents the specific heat capacity of the metal reaction layer. A T represents the melting point of the electrode protective layer. e The ambient temperature.
6. The method for preparing a solar cell according to claim 1, characterized in that, In step S300, the semi-finished solar cell is heated simultaneously with laser irradiation, and the heating temperature is 300℃~900℃.
7. The method for preparing a solar cell according to claim 1, characterized in that, The metal reaction layer includes any one of aluminum, magnesium, zinc, cadmium, and tin, or an alloy containing them.
8. The method for preparing a solar cell according to claim 1, characterized in that, The solar cell is a back-contact solar cell. The semiconductor layer includes a first doped semiconductor layer and a second doped semiconductor layer. The first side of the semi-finished solar cell includes a first semiconductor region and a second semiconductor region arranged in an interdigitated pattern, as well as an isolation region located between adjacent first semiconductor regions and second semiconductor regions. The first doped semiconductor layer is disposed in the first semiconductor region, and the second doped semiconductor layer is disposed in the second semiconductor region. The first doped semiconductor layer and the second doped semiconductor layer have opposite conductivity types.
9. The method for preparing a solar cell according to claim 1, characterized in that, The laser used in step S300 is a picosecond laser or a femtosecond laser.
10. The method for preparing a solar cell according to claim 1, characterized in that, The resistivity of the electrode layer is in the range of 1.5 × 10⁻⁶. -8 Ω·m~20.0×10 -8 Ω·m; the melting point temperature range of the electrode protective layer is 600℃~3500℃, and the resistivity range is 3.5×10 Ω·m. -8 Ω·m~30.0×10 -8 Ω·m.
11. The method for preparing a solar cell according to claim 1, characterized in that, The corrosive liquid is an acidic corrosive liquid, the electrode layer includes any one of copper, aluminum, magnesium, zinc, cadmium, indium, and tin or an alloy containing them, and the electrode protective layer includes any one of beryllium, molybdenum, tungsten, cobalt, nickel, iron, and platinum or an alloy containing them.
12. The method for preparing a solar cell according to claim 1, characterized in that, The corrosive liquid is an alkaline corrosive liquid, and the electrode layer includes any one of aluminum, beryllium, molybdenum, tungsten, zinc, indium, iron, platinum, and tin or an alloy thereof; the electrode protective layer includes any one of silver, copper, gold, magnesium, cobalt, nickel, cadmium, molybdenum, tungsten, indium, iron, and platinum or an alloy thereof.
13. The method for preparing a solar cell according to claim 1, characterized in that, The thickness of the electrode protective layer ranges from 2 nm to 200 nm.
14. The method for preparing a solar cell according to claim 1, wherein the thickness of the electrode protective layer ranges from 20 nm to 120 nm.
15. The method for preparing a solar cell according to claim 1, characterized in that, In step S100, at least a portion of the passivation layer outside the target electrode structure region is a textured structure, or the entire passivation layer is a textured structure.
16. The method for preparing a solar cell according to claim 1, characterized in that, The solar cell is a back-contact solar cell. The semiconductor layer includes a first doped semiconductor layer and a second doped semiconductor layer. The first side of the semi-finished solar cell includes a first semiconductor region and a second semiconductor region arranged in an interdigitated pattern, as well as an isolation region located between adjacent first semiconductor regions and second semiconductor regions. The first doped semiconductor layer is disposed in the first semiconductor region, and the second doped semiconductor layer is disposed in the second semiconductor region. The first doped semiconductor layer and the second doped semiconductor layer have opposite conductivity types. In step S100, the portion of the passivation layer corresponding to the isolation region has a textured structure, or the portion of the passivation layer outside the target electrode structure region has a textured structure, or the entire passivation layer has a textured structure.
17. The method for preparing a solar cell according to claim 15 or 16, characterized in that, The laser used in step S300 is a pulsed laser or a continuous laser.
18. The method for preparing a solar cell according to claim 1, characterized in that, In step S100, the method for preparing a continuous electrode layer and a continuous electrode protective layer includes any one of physical vapor deposition, chemical deposition, or electroplating.
19. The method for preparing a solar cell according to claim 1, characterized in that, In step S400, after etching, the electrode protective layer that has not been peeled off in the laser irradiation area of the first side of the semi-finished solar cell is cleaned and removed by a brush; or, in step S400, ultrasonic cleaning is used simultaneously with etching to assist in peeling off the electrode protective layer corresponding to the laser irradiation area.