Glass substrate for electronic packaging

Abstract

The application discloses a kind of electronic packaging glass substrates, belong to electronic glass technical field.It includes the following according to the mole percentage of raw materials:69%‑71%SiO2, 13%‑14%Al2O3, 1%‑2.5%B2O3, 0.5%‑1%Dy2O3, 0.5%‑1%Gd2O3, 0.2%‑0.4%MnO, 0.2%‑0.4%NiO, 0.5%‑1%ZnO and 11%‑14%alkaline earth metal oxide.By introducing the combination of transition metal oxide and rare earth oxide, precise control of dielectric properties is achieved, based on aluminosilicate system, and the ratio of alkaline earth metal oxide is controlled, so that the thermal expansion coefficient of the glass is maintained stable, thereby providing dimensional stability and packaging reliability;Therefore, the application has important application value in the field of electronic glass technology.

Description

Technical Field

[0001] This invention belongs to the field of electronic glass technology, specifically, it relates to a glass substrate for electronic packaging. Background Technology

[0002] TGV (Through GlassVia) technology, as one of the core processes in advanced packaging, places high demands on the performance of glass substrates in many aspects. An ideal glass substrate needs to have extremely high dimensional stability, excellent high-frequency electrical performance, and good thermal matching to meet the needs of high-density integration, high-frequency and high-speed signal transmission, and multi-layer stacked packaging.

[0003] Currently, commonly used packaging substrate materials, such as organic substrates or conventional glass, still have significant performance limitations. While organic substrates offer good processing performance, their coefficient of thermal expansion (CTE) is typically high, differing significantly from that of silicon chips. This makes them prone to warping and stress during thermal cycling, affecting packaging reliability and alignment accuracy. Furthermore, organic materials have high dielectric constants and dielectric losses, especially at high frequencies above 10 GHz, resulting in significant signal transmission losses and making it difficult to meet the stringent signal integrity requirements of high-frequency applications such as AI chips and RF modules.

[0004] On the other hand, while traditional borosilicate glasses have a low CTE, their composition systems often struggle to balance low dielectric properties with good process adaptability. Some glass compositions have a high B2O3 content, which, while helping to lower the melting temperature, may lead to decreased dielectric properties, increased dielectric constant, and increased losses, failing to meet the stringent requirements of TGV technology for low dielectric constant and low dielectric loss.

[0005] Therefore, there is no existing technology that can comprehensively optimize the coefficient of thermal expansion, dielectric properties, insulation properties and process adaptability of glass substrate materials. There is an urgent need to develop a new glass composition to better meet the stringent requirements of TGV technology for electronic packaging glass. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of the prior art and provide a glass substrate for electronic packaging.

[0007] The objective of this invention can be achieved through the following technical solutions: A glass substrate for electronic packaging comprises the following raw materials in molar percentage: 69%-71% SiO2, 13%-14% Al2O3, 1%-2.5% B2O3, 0.5%-1% Dy2O3, 0.5%-1% Gd2O3, 0.2%-0.4% MnO, 0.2%-0.4% NiO, 0.5%-1% ZnO, and 11%-14% alkaline earth metal oxides.

[0008] Furthermore, the alkaline earth metal oxides include MgO, CaO, and SrO.

[0009] Furthermore, the MgO accounts for 7%-8% of the total raw material molar percentage.

[0010] Furthermore, the CaO accounts for 3%-4% of the total molar percentage of the raw materials.

[0011] Furthermore, the SrO accounts for 1%-2% of the total raw material molar percentage.

[0012] Furthermore, the proportions of the raw materials must meet the following conditions: 0.01≤B2O3 / (Al2O3+SiO2)≤0.03; 0.06≤ZnO / MgO≤0.14.

[0013] This invention is based on an aluminosilicate glass system, constructing a glass network. By controlling the ratio of silicon, aluminum, and boron in the main network forming elements, as well as the content of the main external network modifying oxides, it provides basic mechanical strength, chemical stability, and a low coefficient of thermal expansion. Simultaneously, by incorporating transition metal oxides as dielectric constant modifiers, the dielectric constant of the glass can be precisely controlled at the required low level to meet the requirements of high-frequency signal transmission. Furthermore, by incorporating rare earth metal oxides as network agglomerates and densifiers, these rare earth ions, possessing high field strength, can fill and "tighten" the glass network structure, making it more aggregated and dense. This effectively reduces dielectric loss and improves insulation resistance, which is key to achieving ultra-low dielectric loss.

[0014] The beneficial effects of this invention are: 1. By introducing a key combination of transition metal oxides and rare earth oxides, precise control of dielectric properties is achieved, ultimately enabling the glass substrate to have a low dielectric constant and extremely low dielectric loss at a high frequency of 10GHz. This significantly reduces signal transmission delay and loss, perfectly meeting the stringent requirements for signal integrity in high-frequency applications such as AI chips and RF devices. 2. Based on the aluminosilicate system, by precisely controlling the ratio of the main components to alkaline earth metal oxides, the thermal expansion coefficient of the glass is kept stable, which greatly reduces the encapsulation warpage and internal stress caused by thermal mismatch, thereby providing higher dimensional stability and encapsulation reliability. This invention successfully solves the industry pain point that traditional packaging substrate materials (such as organic substrates or ordinary glass) struggle to balance high-frequency performance, thermal matching, and structural compactness, providing an ideal glass substrate material with excellent comprehensive performance for advanced TGV packaging technology. Detailed Implementation

[0015] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0016] A glass substrate for electronic packaging is prepared by the following steps: A1. Mix the raw materials according to the proportions in Table 1 to obtain the mixture; A2. In a crucible, the mixture is heated from room temperature to 1550°C at a rate of 3°C / min and held for 2 hours. Then, the temperature is increased from 1550°C to 1700°C at a rate of 2°C / min and held for 5 hours to obtain a fully melted glass. A3. Pour the fully molten glass onto a copper plate for shaping, and place it in an annealing furnace for annealing at 750°C for 2 hours. Finally, cool the sample to room temperature with the furnace to obtain a glass substrate for electronic packaging.

[0017] The embodiments and comparative examples of this invention both employ the above-described preparation process, and the raw material composition is shown in Table 1; Table 1 Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example Glass composition (molar percentage) <![CDATA[SiO2]]> 69 69.5 69 69 71 65 <![CDATA[Al2O3]]> 13 14 13.6 13.3 13 11 <![CDATA[B2O3]]> 1 1.2 2 2.5 2.5 8 MgO 8 7.5 7.5 7.5 7 4 CaO 4 3.5 3.5 3.5 3 8 SrO 2 1.5 1.5 1.5 1 4 ZnO 0.5 0.6 0.5 0.5 1 / <![CDATA[Dy2O3]]> 1 0.8 0.8 0.8 0.5 / <![CDATA[Gd2O3]]> 1 0.8 0.8 0.6 0.5 / MnO 0.3 0.3 0.4 0.4 0.2 / NiO 0.2 0.3 0.4 0.4 0.3 / The performance of the above embodiments and comparative examples was measured, and the results are shown in Table 2: Table 2 Measurement items Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example Coefficient of thermal expansion (E-6 / ℃) 3.9 4.0 4.1 4.2 4.5 3.8 <![CDATA[Log 10 (resistivity) / 250℃ (Ω·cm) 13.89 14.21 13.77 13.92 13.81 12.56 Dielectric constant / 10GHz 4.89 4.92 4.77 4.88 4.94 6.12 Dielectric loss / 10GHz 0.0023 0.0028 0.0021 0.0029 0.0018 0.0045 As shown in Table 2, the glass prepared in the embodiments of the present invention has a coefficient of thermal expansion of 3.8-4.2E-6 / ℃, a logarithmic resistivity of 13.81-14.21 Ω·cm at 250℃, a dielectric constant of 4.77-4.94, and a dielectric loss of 0.0018-0.0029. Compared with the comparative examples, the present invention successfully solves the problem of balancing high-frequency performance, thermal matching, and structural compactness in traditional packaging substrate materials (such as organic substrates or ordinary glass), and has significant application value in the field of electronic glass technology.

[0018] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within the present invention.

Claims

1. A glass substrate for electronic packaging, characterized in that, It includes the following raw materials in molar percentage: 69%-71% SiO2, 13%-14% Al2O3, 1%-2.5% B2O3, 0.5%-1% Dy2O3, 0.5%-1% Gd2O3, 0.2%-0.4% MnO, 0.2%-0.4% NiO, 0.5%-1% ZnO, and 11%-14% alkaline earth metal oxides.

2. The glass substrate for electronic packaging according to claim 1, characterized in that, The alkaline earth metal oxides include MgO, CaO, and SrO.

3. The glass substrate for electronic packaging according to claim 2, characterized in that, The MgO accounts for 7%-8% of the total raw material molar percentage.

4. The glass substrate for electronic packaging according to claim 2, characterized in that, The CaO accounts for 3%-4% of the total raw material molar percentage.

5. A glass substrate for electronic packaging according to claim 2, characterized in that, The molar percentage of SrO in the total raw material is 1%-2%.

6. The glass substrate for electronic packaging according to claim 1, characterized in that, The ratio of raw materials must meet the following conditions: 0.01≤B2O3 / (Al2O3+SiO2)≤0.03; 0.06≤ZnO / MgO≤0.14.