Microwave annealing apparatus and semiconductor workpiece carrier
By using larger diameter first and second power dissipation components in the microwave annealing equipment, the problem of electric field non-uniformity in the wafer annealing process was solved, a more uniform electric field distribution was achieved, and the uniformity and consistency of wafer annealing were improved.
Patent Information
- Application Number
- CN202610499493.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-15
- Publication Date
- 2026-06-05
AI Technical Summary
During the microwave annealing stage, when multiple wafers are stacked vertically, the uniformity of the wafer annealing process is poor, especially in the edge region of the wafers where the electric field is uneven, resulting in edge effects.
By using a first and second power dissipation component with a larger diameter to cover the edge of the semiconductor workpiece, the electric field boundary conditions in the processing space are changed, making the electric field lines parallel and uniform, absorbing excess energy at the edge, and improving the electric field uniformity.
It improves the uniformity of the semiconductor workpiece annealing process, reduces the temperature difference between the wafer edge and the center region, and improves the wafer annealing effect.
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Figure CN122161351A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor equipment technology, and in particular to a microwave annealing apparatus and a semiconductor workpiece carrier. Background Technology
[0002] In related technologies, during the microwave annealing stage, multiple semiconductor workpieces, such as wafers, are typically annealed simultaneously; these wafers are stacked vertically. However, the uniformity of the wafer annealing process is poor. Summary of the Invention
[0003] This disclosure provides a microwave annealing apparatus and a semiconductor workpiece carrier.
[0004] As one aspect of this disclosure, an embodiment provides a semiconductor workpiece support device for a microwave annealing apparatus; the semiconductor workpiece support device includes: a rotating flange; a rotating drive member connected to the rotating flange for driving the rotating flange to rotate; a support column located above the rotating flange away from the rotating drive member, and provided with a plurality of support portions for supporting the semiconductor workpiece; a first power dissipation member installed on the upper part of the support column and located above the support portions; and a second power dissipation member installed on the lower part of the support column and located below the support portions; wherein the diameters of the first power dissipation member and the second power dissipation member are larger than the diameter of the semiconductor workpiece.
[0005] In one embodiment, the support portion includes a first support groove disposed on the inner sidewall of the support column facing the central axis of the semiconductor workpiece carrier.
[0006] In one embodiment, the support column is provided with a first support step; at least a portion of the first support step is provided on the outer side wall of the support column; the first power dissipation component is provided with a first through hole; the upper part of the support column passes through the first through hole, and the first power dissipation component is mounted on the first support step.
[0007] In one embodiment, the support column is provided with a second support step; at least a portion of the second support step is disposed on the outer side wall of the support column; the second support step protrudes from the first support step in a direction away from the central axis of the semiconductor workpiece bearing device; the second power dissipation component is provided with a second through hole; the second through hole of the support column allows a portion of the support column to pass through, and the second power dissipation component is mounted on the second support step.
[0008] In one embodiment, the support columns are three in number and are spaced apart.
[0009] In one embodiment, the number and distribution of the first through holes of the first power dissipation component and the number and distribution of the second through holes of the second power dissipation component are adapted to the number and distribution of the support columns.
[0010] In one embodiment, the support column includes, from top to bottom, a first segment, a second segment, and a third segment; the first support groove is located in the second segment; the diameter of the first segment is smaller than the diameter of the second segment, and the connection between the first segment and the second segment forms a support step; the diameter of the second segment is smaller than the diameter of the third segment, and the connection between the second segment and the third segment forms two support steps.
[0011] In one embodiment, the support portion includes a second support groove disposed on the inner sidewall of the support column facing the central axis of the semiconductor workpiece carrier; the second support groove is used to support the first power dissipation component; and the extension depth of the second support groove is greater than the extension depth of the first support groove in a direction away from the central axis of the semiconductor workpiece carrier.
[0012] In one embodiment, the support portion includes a third support groove disposed on the inner sidewall of the support column facing the central axis of the semiconductor workpiece carrier; the third support groove is used to support the second power dissipation component; and the extension depth of the third support groove is greater than the extension depth of the first support groove in a direction away from the central axis of the semiconductor workpiece carrier.
[0013] In one embodiment, at least a portion of the support column has an elongated oval cross-section.
[0014] In one embodiment, the support column is provided with a plug-in end; the support column is also provided with a first marking portion, the first marking portion being located above the plug-in end; the semiconductor workpiece carrying device further includes: a base, fixed above the rotating flange away from the rotating drive member, and provided with a mounting hole; the base is also provided with a second marking portion, which is opposite to the first marking portion, to guide the plug-in end to be inserted into the mounting hole.
[0015] As one aspect of this disclosure, this disclosure provides a microwave annealing apparatus, including: a semiconductor workpiece carrier as described in any of the preceding claims.
[0016] The present invention employs the above-described technical solution to push the effective edge within the processing space outward from the edge of the semiconductor workpiece itself to the edge of the first power dissipation component and the edge of the second power dissipation component. In this way, the electric field corresponding to the entire semiconductor workpiece is approximately formed as a uniform strong electric field, and the electric field lines are parallel and uniform to each other. This is beneficial to improve or even avoid the edge effect of the semiconductor workpiece and can improve the uniformity of the semiconductor workpiece annealing process.
[0017] The above overview is for illustrative purposes only and is not intended to be limiting in any way. Further aspects, embodiments, and features of this disclosure will become readily apparent from the accompanying drawings and the following detailed description, in addition to the illustrative aspects, embodiments, and features described above. Attached Figure Description
[0018] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments disclosed in this disclosure and should not be construed as limiting the scope of this disclosure.
[0019] Figure 1 A schematic diagram of the structure of a semiconductor workpiece carrier according to an embodiment of the present disclosure is shown; Figure 2 A schematic diagram of the structure of a support column according to an embodiment of the present disclosure is shown; Figure 3 A schematic diagram of the structure of a first power dissipation component according to an embodiment of the present disclosure is shown; Figure 4 A schematic diagram of the structure of a second power dissipation component according to an embodiment of the present disclosure is shown; Figure 5 A schematic diagram of the structure of a support column according to another embodiment of the present disclosure is shown.
[0020] Explanation of reference numerals in the attached drawings: 10-Rotating flange; 20-Rotating drive component; 30-Support column; 30a-First section; 30b-Second section; 30c-Third section; 31-First support groove; 32-First support step; 33-Second support step; 34-Second support groove; 35-Third support groove; 36-First marking part; 37-Plug-in end; 40-First power dissipation component; 41-First through hole; 50-Second power dissipation component; 51-Second through hole; 60-Semiconductor workpiece; 70-Base support; 80-Fixed flange; 90-Microwave shielding device. Detailed Implementation
[0021] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this disclosure. Therefore, the drawings and description are to be considered exemplary in nature and not restrictive.
[0022] In related technologies, multiple wafers are stacked vertically. Near the center of the wafer (i.e., the central region), a nearly uniform, strong electric field is formed, with parallel electric field lines. Near the edge of the wafer (i.e., the edge region), due to abrupt geometric changes, the electric field undergoes diffraction, reflection, and concentration. The electric field lines in this region are curved and divergent, and the electric field intensity vector no longer conforms to the characteristics of a uniform electric field. This results in a significant temperature difference between the edge and central regions of the wafer; for example, the edge region may be hotter than the central region. This phenomenon is known as the edge effect, leading to poor uniformity in the wafer annealing process.
[0023] This embodiment provides a microwave annealing apparatus and a semiconductor workpiece support device. By configuring a first power dissipation component and a second power dissipation component with larger diameters, on the one hand, the first power dissipation component and the second power dissipation component can push the edge from the edge of the semiconductor workpiece itself outward to the edge of the power dissipation component. In this way, the electric field in the area covering the semiconductor workpiece is more likely to remain parallel and uniform. On the other hand, the first power dissipation component and the second power dissipation component can absorb excess energy that would originally be concentrated in the edge area of the semiconductor workpiece, ultimately making the energy distribution of the semiconductor workpiece itself more uniform, thereby improving the uniformity of the semiconductor workpiece annealing process.
[0024] The structure, function, and implementation process of the microwave annealing equipment and semiconductor workpiece carrier provided in this embodiment will be illustrated below with reference to the accompanying drawings.
[0025] This embodiment provides a microwave annealing apparatus, including: a housing and a semiconductor workpiece carrier. The housing provides a relatively enclosed processing space. At least a portion of the semiconductor workpiece carrier is located within the housing and is used to carry the semiconductor workpiece.
[0026] like Figure 1 As shown, the semiconductor workpiece carrying device includes: a rotating flange 10; a rotating drive 20 connected to the rotating flange 10 for driving the rotating flange 10 to rotate; a support column 30 located above the rotating flange 10 away from the rotating drive 20, and provided with multiple support portions for supporting the semiconductor workpiece 60; a first power dissipation component 40 installed on the upper part of the support column 30 and located above the support portions; and a second power dissipation component 50 installed on the lower part of the support column 30 and located below the support portions; wherein the diameters of the first power dissipation component 40 and the second power dissipation component 50 are larger than the diameter of the semiconductor workpiece 60.
[0027] The rotating flange 10 may be circular. A rotary drive 20 is connected to the underside of the rotating flange 10. The rotary drive 20 may be a motor capable of outputting rotary motion. Alternatively, the rotary drive 20 may be a hydraulically or pneumatically driven actuator capable of outputting rotary motion. The rotating flange 10 may be coaxially arranged with the rotary drive 20. The rotating flange 10 may be fixedly connected to the rotary drive 20. The rotating flange 10 may be detachably connected to the rotary drive 20.
[0028] In some examples, the rotary flange 10 can be fastened to the rotary drive 20 using multiple bolts or screws. In other examples, the rotary flange 10 can be keyed to the rotary drive 20. In still other examples, the rotary flange 10 can be welded to the rotary drive 20.
[0029] A support column 30 may be provided on the upper side of the rotary flange 10. The support column 30 is used to support the semiconductor workpiece 60. The axis of the support column 30 is parallel to the axis of the semiconductor workpiece bearing device. The support column 30 can be a stepped rotating shaft structure, made of clean materials such as quartz or ceramic.
[0030] Two support pillars 30 may be provided above the rotary flange 10, with each pillar supporting a portion of the wafer near its opposite edge. Alternatively, three support pillars 30 may be provided above the rotary flange 10, spaced apart circumferentially along the semiconductor workpiece 60. Or, more than three support pillars 30 may be provided above the rotary flange 10, spaced apart circumferentially along the semiconductor workpiece 60.
[0031] Multiple support parts are provided on the inner side of the support column 30 facing the central axis of the semiconductor workpiece carrier, and the multiple support parts are distributed at intervals along the axial direction of the support column 30. The support parts of each support column 30 are respectively and correspondingly arranged to ensure the stability of the supported semiconductor workpiece 60. When the support column 30 supports multiple semiconductor workpieces 60, the multiple semiconductor workpieces 60 can be arranged coaxially.
[0032] The first power dissipation component 40 can be mounted on the upper part of the support column 30. The first power dissipation component 40 is located above the uppermost support portion. The first power dissipation component 40 can be circular. The diameter of the first power dissipation component 40 is larger than the diameter of the semiconductor workpiece 60. The first power dissipation component 40 can be coaxially arranged with the semiconductor workpiece 60. In this way, the first power dissipation component 40 can cover the semiconductor workpiece 60.
[0033] The second power dissipation component 50 can be installed at the lower part of the support column 30, and the second power dissipation component 50 is located below the lowermost support portion. The second power dissipation component 50 can be circular. The diameter of the second power dissipation component 50 is larger than the diameter of the semiconductor workpiece 60. The second power dissipation component 50 can be coaxially arranged with the semiconductor workpiece 60. In this way, the second power dissipation component 50 can cover the semiconductor workpiece 60.
[0034] This embodiment, by introducing a first power dissipator 40 and a second power dissipator 50 with larger diameters and regular shapes, alters the electric field boundary conditions within the processing space. This is equivalent to shifting the effective edge of the processing space outward from the edge of the semiconductor workpiece 60 itself to the edges of the first power dissipator 40 and the second power dissipator 50. Thus, the first power dissipator 40 and the second power dissipator 50 can cover the semiconductor workpiece 60. The orthographic projection range of the semiconductor workpiece 60 onto the first power dissipator 40 and the second power dissipator 50 is located in the central region of the first power dissipator 40 and the second power dissipator 50. The electric field corresponding to the semiconductor workpiece 60 approximately forms a uniform strong electric field, with parallel and uniform electric field lines. Furthermore, for absorption-type power dissipators, the first power dissipator 40 and the second power dissipator 50 can also absorb excess energy that would otherwise be concentrated at the wafer edge and convert the absorbed energy into heat.
[0035] In some examples, reflective structures may also be provided on the surfaces of the first power dissipator 40 and the second power dissipator 50 to reflect energy from the edges to the central region of the processing space or the semiconductor workpiece 60.
[0036] The microwave annealing equipment provided in this embodiment, by setting a first power dissipation component 40 installed on the upper part of the support column 30 and a second power dissipation component 50 installed on the lower part of the support column 30, and the diameters of the first power dissipation component 40 and the second power dissipation component 50 are larger than the diameter of the semiconductor workpiece 60, can push the effective edge in the processing space from the edge of the semiconductor workpiece 60 itself to the edge of the first power dissipation component 40 and the edge of the second power dissipation component 50. In this way, the electric field corresponding to the entire semiconductor workpiece 60 is approximately formed into a uniform strong electric field, and the electric field lines are parallel and uniform to each other, which is beneficial to improve or even avoid the edge effect of the semiconductor workpiece 60 and can improve the uniformity of the annealing process of the semiconductor workpiece 60.
[0037] like Figure 1 and Figure 2As shown, in some embodiments, the support includes a first support groove 31 disposed on the inner sidewall of the support column 30 facing the central axis of the semiconductor workpiece carrier. The opening of the first support groove 31 is located on the inner sidewall of the support column 30. The first support groove 31 extends in an outward direction. Along the axial direction of the semiconductor workpiece carrier, each support column 30 may be provided with three, four, five, six, seven, or more first support grooves 31. The number of first support grooves 31 provided on multiple support columns 30 may be equal, and the first support grooves 31 of each support column 30 are correspondingly provided.
[0038] To ensure reliable support for the semiconductor workpiece 60 while maintaining the structural strength of the support column 30, the extension depth of the first support groove 31 can be greater than or equal to one-third of the diameter of the support column 30, and less than or equal to two-thirds of the diameter of the support column 30. For example, the extension depth of the first support groove 31 can be one-third of the diameter of the support column 30, or half the diameter of the support column 30, or two-thirds of the diameter of the support column 30.
[0039] In other embodiments, the semiconductor workpiece 60 can also be supported by air flotation. For example, the support includes an air outlet provided on the inner sidewall of the support column 30, and the semiconductor workpiece 60 is held in a set position by the gas blown out from the air outlet.
[0040] like Figures 1 to 3 As shown, in some embodiments, the support column 30 is provided with a first support step 32; at least a portion of the first support step 32 is provided on the outer side wall of the support column 30. The first power dissipation component 40 is provided with a first through hole 41. The upper part of the support column 30 passes through the first through hole 41, and the first power dissipation component 40 is mounted on the first support step 32.
[0041] In some examples, the first support step 32 is formed on the outer side of the support column 30. In other examples, a portion of the first support step 32 may be formed on the outer side of the support column 30, while another portion is formed on the inner side of the support column 30. In still other examples, the first support step 32 is a closed-loop structure along the circumference of the support column 30. The specific location of the first support step 32 can be set according to actual needs.
[0042] The first through hole 41 of the first power dissipation component 40 is used for the upper part of the support portion to pass through, so that the first power dissipation component 40 can be placed on the first support step 32 from above the support column 30. The upper surface of the first support step 32 serves as the first support surface for supporting the first power dissipation component 40.
[0043] The number and distribution of the first through holes 41 of the first power dissipation component 40 are adapted to the number and distribution of the support columns 30. For example, when there are two support columns 30, the first power dissipation component 40 is provided with two first through holes 41, and the two first through holes 41 correspond to the two support columns 30 respectively. As another example, when there are three support columns 30, the first power dissipation component 40 is provided with three first through holes 41, and the three first through holes 41 correspond to the three support columns 30 respectively.
[0044] like Figures 1 to 4 As shown, in some embodiments, the support column 30 is provided with a second support step 33; at least a portion of the second support step 33 is provided on the outer side wall of the support column 30. Along a direction away from the central axis of the semiconductor workpiece carrier, the second support step 33 protrudes from the first support step 32. The second power dissipation component 50 is provided with a second through hole 51; the second through hole 51 of the support column 30 allows a portion of the support column 30 to pass through, and the second power dissipation component 50 rests on the second support step 33.
[0045] In some examples, the second support step 33 is formed on the outer side of the support column 30. In other examples, part of the second support step 33 can be formed on the outer side of the support column 30, and another part can be formed on the inner side of the support column 30. In still other examples, the second support step 33 is a closed-loop structure along the circumference of the support column 30. The specific location of the second support step 33 can be set according to actual needs.
[0046] The second through hole 51 of the second power dissipation component 50 is used for the support portion to pass through, so that the second power dissipation component 50 can be placed on the second support step 33 from above the support column 30. The upper surface of the second support step 33 serves as the second support surface for supporting the second power dissipation component 50.
[0047] The number and distribution of the second through holes 51 in the second power dissipation component 50 are adapted to the number and distribution of the support columns 30. For example, when there are two support columns 30, the second power dissipation component 50 is provided with two second through holes 51, and the two second through holes 51 correspond to the two support columns 30 respectively. As another example, when there are three support columns 30, the second power dissipation component 50 is provided with three second through holes 51, and the three second through holes 51 correspond to the three support columns 30 respectively.
[0048] Along the direction away from the central axis of the semiconductor workpiece carrier, the second support step 33 protrudes from the first support step 32, so that when the second power dissipation component 50 is installed from above the support column 30, it can pass smoothly through the first support step 32 and be supported on the second support surface of the second support step 33.
[0049] Taking three support columns 30 as an example, the first support surfaces of the first support steps 32 of the three support columns 30 are coplanar, and the circular surface formed by connecting the three first support surfaces has a first outer diameter; the second support surfaces of the second support steps 33 of the three support columns 30 are coplanar, and the circular surface formed by connecting the three second support surfaces has a second outer diameter, which is greater than the first outer diameter.
[0050] In some embodiments, for ease of fabrication, the support column 30 is cylindrical. The support column 30 includes, from top to bottom, a first segment 30a, a second segment 30b, and a third segment 30c. A first support groove 31 is located in the second segment 30b. The diameter of the first segment 30a is smaller than the diameter of the second segment 30b. A support step is formed at the connection between the first segment 30a and the second segment 30b. The portion of the upper surface of the second segment 30b that radially protrudes from the first segment 30a forms the first support surface of the first support step 32. The diameter of the second segment 30b is smaller than the diameter of the third segment 30c. A second support step is formed at the connection between the second segment 30b and the third segment 30c. The portion of the upper surface of the third segment 30c that radially protrudes from the second segment 30b forms the second support surface of the second support step 33.
[0051] In this configuration, the diameter of the first through hole 41 of the first power dissipation component is greater than the diameter of the first segment 30a and less than the diameter of the second segment 30b. The diameter of the second through hole 42 of the second power dissipation component is greater than the diameter of the second segment 30b and less than the diameter of the third segment 30c.
[0052] like Figure 5 As shown, in some embodiments, the support portion includes a second support groove 34 disposed on the inner sidewall of the support column 30 facing the central axis of the semiconductor workpiece carrier; the second support groove 34 is used to support the first power dissipation component 40. Along the direction away from the central axis of the semiconductor workpiece carrier, the extension depth of the second support groove 34 is greater than the extension depth of the first support groove 31. This eliminates the need for opening holes in the first power dissipation component 40.
[0053] To ensure the structural strength of the support column 30, the outer side of the support column 30 extends outward to meet the requirement that the second support groove 34 extends radially along the support column 30. For example, at least a portion of the cross-section of the support column 30 is oblong.
[0054] The opening of the second support groove 34 is located on the inner side wall of the support column 30, and the second support groove 34 extends outward along the radial direction of the support column 30. The radial extension length of the second support groove 34 along the support column 30 can be 1.5 times, 2 times, or 2.5 times the radial extension length of the first support groove 31 along the support column 30, and can be set according to actual needs.
[0055] like Figure 5As shown, in some embodiments, the support portion includes a third support groove 35 disposed on the inner sidewall of the support column 30 facing the central axis of the semiconductor workpiece carrier; the third support groove 35 is used to support the second power dissipation component 50. Along the direction away from the central axis of the semiconductor workpiece carrier, the extension depth of the third support groove 35 is greater than the extension depth of the first support groove 31. This eliminates the need for opening holes in the second power dissipation component 50.
[0056] The opening of the third support groove 35 is located on the inner side wall of the support column 30, and the third support groove 35 extends outward along the radial direction of the support column 30. The radial extension length of the third support groove 35 along the support column 30 can be 1.5 times, 2 times, or 2.5 times the radial extension length of the first support groove 31 along the support column 30, and can be set according to actual needs.
[0057] The radial extension length of the third support groove 35 along the support column 30 can be equal to the radial extension length of the second support groove 34 along the support column 30. Alternatively, the radial extension length of the third support groove 35 along the support column 30 can be slightly greater than the radial extension length of the second support groove 34 along the support column 30. Or, the radial extension length of the third support groove 35 along the support column 30 can be slightly less than the radial extension length of the second support groove 34 along the support column 30.
[0058] In some application scenarios, the support column 30 is provided with a first support step 32 for supporting the first power dissipation component 40, and the support column 30 is provided with a second support step 33 for supporting the second power dissipation component 50.
[0059] In some application scenarios, the support column 30 is provided with a second support groove 34 for supporting the first power dissipation component 40, and the support column 30 is provided with a third support groove 35 for supporting the second power dissipation component 50.
[0060] In some application scenarios, the support column 30 is provided with a first support step 32 for supporting the first power dissipation component 40, and the support column 30 is provided with a third support groove 35 for supporting the second power dissipation component 50.
[0061] In some application scenarios, the support column 30 is provided with a second support groove 34 for supporting the first power dissipation component 40, and the support column 30 is provided with a second support step 33 for supporting the second power dissipation component 50.
[0062] In some embodiments, the support column 30 is provided with a plug-in end 37; the support column 30 is also provided with a first marking portion 36, which is located above the plug-in end 37. The first marking portion 36 may be a vertically arranged protruding strip or a recessed strip.
[0063] The semiconductor workpiece carrier also includes a base 70, fixed above the rotary flange 10 away from the rotary drive 20. The base 70 may be cylindrical, for example. The base 70 may be welded to the rotary flange 10, or fastened by bolts or screws, or snap-fitted, or glued.
[0064] The base 70 is also provided with mounting holes for mating with the plug-in end 37. The axial position of the support column 30 can be adjusted by adding or removing shims into the mounting holes to ensure that the corresponding first support groove 31 of each support column 30 corresponds.
[0065] The base 70 is also provided with a second marking portion, which can be a vertically arranged raised or recessed strip. When inserting the plug end 37 of the support column 30 into the mounting hole of the base 70, the first marking portion 36 and the second marking portion need to be aligned so that the semiconductor workpiece 60 can be smoothly placed into the first support groove 31.
[0066] In this embodiment, by inserting the support column 30 into the base 70, it is easy to replace the support column 30, reducing subsequent maintenance costs; and by configuring the first marking part 36 and the second marking part, it is beneficial to improve the assembly efficiency and assembly quality of the support column 30 and the base 70.
[0067] In some examples, the semiconductor workpiece carrier also includes a fixed flange 80, which is disposed below the rotating flange 10. The rotating drive component 20 is mounted on the fixed flange 80 via a rotating bearing. The fixed flange 80 can be fixedly connected to the housing. A microwave shielding device 90 can be provided between the fixed flange 80 and the rotating flange 10 to prevent microwave leakage.
[0068] This embodiment also provides a semiconductor workpiece carrier device, whose structure, function and implementation process are the same as the semiconductor carrier device in the previous embodiment, and will not be repeated here.
[0069] Other configurations of the microwave annealing equipment and semiconductor workpiece carrier in the above embodiments can be adopted from various technical solutions now and in the future known to those skilled in the art, and will not be described in detail here.
[0070] In the description of this specification, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.
[0071] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this disclosure, "multiple" means two or more, unless otherwise explicitly specified.
[0072] In this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.
[0073] In this disclosure, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0074] The foregoing disclosure provides many different implementations or examples for carrying out different structures of this disclosure. To simplify the disclosure, specific examples of components and arrangements have been described above. Of course, these are merely examples and are not intended to limit the scope of this disclosure. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.
[0075] The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this disclosure, and these should all be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.
Claims
1. A semiconductor workpiece carrier for use in microwave annealing equipment, characterized in that, The semiconductor workpiece carrier includes: Rotary flange; A rotary drive component, connected to the rotary flange, is used to drive the rotary flange to rotate; A support column, located above the rotating flange away from the rotating drive component, is provided with multiple support parts, which are used to support semiconductor workpieces; The first power dissipation component is installed on the upper part of the support column and is located above the support portion; The second power dissipation component is installed at the lower part of the support column and located below the support portion; The diameters of the first power dissipation component and the second power dissipation component are larger than the diameter of the semiconductor workpiece.
2. The semiconductor workpiece carrier according to claim 1, characterized in that, The support portion includes a first support groove disposed on the inner sidewall of the support column facing the central axis of the semiconductor workpiece bearing device.
3. The semiconductor workpiece carrier according to claim 2, characterized in that, The support column is provided with a first support step; at least a portion of the first support step is provided on the outer side wall of the support column. The first power dissipation component is provided with a first through hole; The upper part of the support column passes through the first through hole, and the first power dissipation component is erected on the first support step.
4. The semiconductor workpiece carrier according to claim 3, characterized in that, The support column is provided with a second support step; at least a portion of the second support step is disposed on the outer side wall of the support column; the second support step protrudes from the first support step in a direction away from the central axis of the semiconductor workpiece bearing device; The second power dissipation component is provided with a second through hole; The second through hole of the support column allows part of the support column to pass through, and the second power dissipation component is mounted on the second support step.
5. The semiconductor workpiece carrier according to claim 4, characterized in that, The support column is three in number and the three support columns are spaced apart. The number and distribution of the first through holes of the first power dissipation component and the number and distribution of the second through holes of the second power dissipation component are adapted to the number and distribution of the support columns.
6. The semiconductor workpiece carrier according to claim 4, characterized in that, The support column comprises, from top to bottom, three sections: a first section, a second section, and a third section; the first support groove is located in the second section. The diameter of the first segment is smaller than the diameter of the second segment, and the connection between the first segment and the second segment forms the supporting step; The diameter of the second segment is smaller than the diameter of the third segment, and the connection between the second segment and the third segment forms the two supporting steps.
7. The semiconductor workpiece carrier according to claim 2, characterized in that, The support portion includes a second support groove provided on the inner side wall of the support column facing the central axis of the semiconductor workpiece bearing device; the second support groove is used to support the first power dissipation component; Along a direction away from the central axis of the semiconductor workpiece carrier, the extension depth of the second support groove is greater than the extension depth of the first support groove.
8. The semiconductor workpiece carrier according to claim 2, characterized in that, The support portion includes a third support groove provided on the inner side wall of the support column facing the central axis of the semiconductor workpiece bearing device; the third support groove is used to support the second power dissipation component; Along a direction away from the central axis of the semiconductor workpiece carrier, the extension depth of the third support groove is greater than the extension depth of the first support groove.
9. The semiconductor workpiece carrier according to claim 7 or 8, characterized in that, At least a portion of the support column has an elongated oval cross-section.
10. The semiconductor workpiece carrier according to claim 1, characterized in that, The support column is provided with a plug-in end; the support column is also provided with a first marking part, which is located above the plug-in end; The semiconductor workpiece support device further includes: a base, fixed above the rotating flange away from the rotating drive member, and provided with a mounting hole; the base is also provided with a second marking part, which is opposite to the first marking part, to guide the plug-in end to be inserted into the mounting hole.
11. A microwave annealing apparatus, characterized in that, include: The semiconductor workpiece carrier as described in any one of claims 1 to 10.