A phase change memory device simulation system and a simulation method thereof

Abstract

This invention discloses a phase-change memory (PCM) device simulation system and method, relating to the field of computer technology. The system includes: a physics engine module that receives an operation request and calculates physical quantity data of the memory unit based on the device's physical parameters, simulation configuration parameters, and phase-change state data of the memory unit; a state controller module that controls the phase-change process of the memory unit based on changes in the physical quantity data and generates corresponding phase-change commands; a crystallinity and melting rate update module that updates the crystallinity and melting rate of the memory unit based on the phase-change commands and physical quantity data to obtain the phase-change state data of the memory unit and upload it to the physics engine module; and an energy consumption statistics module that monitors the voltage, current, and time parameters in the physical quantity data, calculates the energy consumption for each operation cycle, and generates an energy consumption analysis report. This enables accurate simulation of the entire process of PCM devices, improves simulation accuracy and efficiency, shortens the cycle time, and provides reliable support for device optimization and main control design.

Description

Technical Field

[0001] This invention relates to the field of computer technology, and in particular to a phase-change memory device simulation system and simulation method. Background Technology

[0002] Phase-change memory (PCM) devices offer advantages such as extremely fast read / write speeds and extremely low latency, significantly improving data processing efficiency. Traditional PCM simulation techniques primarily simulate individual device characteristics, relying on external parameter adjustments for process control. Due to the limited range of available data, simulation results often differ from actual device characteristics and struggle to comprehensively support power consumption optimization and performance improvements. Furthermore, this type of simulation is poorly integrated with the main control chip's algorithms and system architecture design, making it difficult to conduct complete system-level verification in the early stages of R&D. This leads to delays in design optimization and problem identification, impacting overall R&D efficiency and product reliability, and limiting the performance and large-scale deployment of PCM devices in high-end applications. Summary of the Invention

[0003] This invention provides a phase-change memory device simulation system and simulation method, which can realize accurate simulation of the entire process of phase-change memory devices, improve simulation accuracy and efficiency, and provide reliable support for device optimization and main control design.

[0004] This invention provides a phase-change memory device simulation system, comprising: The physics engine module is used to receive operation requests and calculate the physical quantity data of the storage unit based on the physical parameters of the device, simulation configuration parameters, and phase transition state data of the storage unit. The state controller module is used to control the phase transition process of the storage unit and generate corresponding phase transition instructions based on the changes in the physical quantity data. The crystallization rate and melting rate update module is used to update the crystallization rate and melting rate of the storage unit according to the phase change command and the physical quantity data, so as to obtain the phase change state data of the storage unit and upload it to the physics engine module. The energy consumption statistics module is used to monitor the voltage, current and time parameters in the physical quantity data, count the energy consumption of each operation cycle, and generate an energy consumption analysis report.

[0005] This invention also provides a simulation method for a phase-change memory device simulation system, comprising: After receiving the operation request, the physics engine module calculates the physical quantity data of the storage unit based on the physical parameters of the device, the simulation configuration parameters, and the phase transition state data of the storage unit. The state controller module controls the phase transition process of the storage unit based on the changes in the physical quantity data, and generates corresponding phase transition instructions; The crystallization rate and melting rate update module updates the crystallization rate and melting rate of the storage unit according to the phase change command and the physical quantity data, so as to obtain the phase change state data of the storage unit and upload it to the physics engine module; The energy consumption statistics module monitors the voltage, current, and time parameters in the physical quantity data, calculates the energy consumption for each operation cycle, and generates an energy consumption analysis report.

[0006] The phase change storage device simulation system provided by this invention, by setting up a physics engine module, a state controller module, a crystallization rate and melting rate update module, and an energy consumption statistics module, can accurately calculate various physical quantity data of the storage unit based on the device physical parameters, simulation configuration parameters, and phase change state data of the storage unit after receiving an operation request. This provides reliable data support and basis for the precise control of the phase change process. The state controller module can accurately control the phase change process of the storage unit and generate appropriate phase change commands based on the real-time changes in physical quantity data, ensuring that the phase change behavior is executed stably and orderly according to the preset logic. The crystallization rate and melting rate update module can update the crystallization rate and melting rate of the storage unit in real time according to the phase change commands and physical quantity data, forming phase change state data that can be transmitted back to the physics engine module. This enables closed-loop iteration and continuous correction of state information during the simulation process, improving the accuracy and consistency of the simulation results. The energy consumption statistics module can monitor the voltage, current, and time parameters in the physical quantity data in real time, accurately calculate the energy consumption of each operation cycle, and generate an energy consumption analysis report, providing intuitive and quantitative data reference for power consumption optimization, structural improvement, and performance evaluation of phase change storage devices. Overall, it realizes the systematic and system-level co-simulation of the entire process of phase change memory devices, from physical behavior modeling, state control, process updating to energy consumption analysis, effectively improving simulation accuracy, efficiency and completeness, and reducing the cost and cycle of actual device research and development and testing.

[0007] In addition, the present invention also provides a corresponding simulation method and electronic equipment for a phase change storage device simulation system, which have the same or corresponding technical features as the phase change storage device simulation system mentioned above, and have the same effect. Attached Figure Description

[0008] To more clearly illustrate the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0009] Figure 1 This is a schematic diagram of a phase-change memory device simulation system provided in an embodiment of the present invention; Figure 2This is a schematic diagram of the system workflow and inter-module interaction process provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the phase-change storage device model integration method provided in the embodiments of the present invention; Figure 4 A flowchart of the simulation method for a phase-change memory device simulation system provided in an embodiment of the present invention. Detailed Implementation

[0010] Phase-change memory (PCM) has demonstrated immense application potential in the field of solid-state drives (SSDs). It boasts extremely fast read / write speeds and very low latency, significantly improving data processing efficiency and providing strong support for applications with extremely high storage requirements, such as high-performance computing and big data processing. Simultaneously, PCM devices are continuously increasing in storage density and exhibiting excellent reliability, capable of stably storing data for extended periods and minimizing the risk of data loss even in harsh environments. PCM devices also have low power consumption, helping to reduce the overall energy consumption of SSDs and extend their lifespan. In large-scale storage systems such as data centers, this contributes to energy conservation and emission reduction, lowering operating costs. Furthermore, with technological advancements, its cost is expected to decrease, further promoting its widespread adoption in the SSD market and making high-performance storage products more affordable. However, traditional PCM device simulation processes rely on external parameters for control, and energy consumption statistics require manual operation. The integration with the main control chip algorithm and system architecture is also weak, making it difficult to conduct complete system-level verification in the early stages of R&D, leading to delays in design optimization and impacting R&D efficiency and product reliability. To address these technical issues, this invention provides a PCM device simulation system.

[0011] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present invention.

[0012] It should be noted that, in the description of this invention, the terms "comprising," "including," or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. The terms "first," "second," etc., used in this invention are used to distinguish similar objects and are not used to describe a set order or sequence.

[0013] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0014] An embodiment of the present invention provides a phase-change memory device simulation system. Figure 1 This is a schematic diagram of a phase-change memory device simulation system provided in an embodiment of the present invention, as shown below. Figure 1 As shown, the phase-change memory device simulation system includes: The Physics Engine module 1 is used to receive operation requests and calculate the physical quantity data of the storage cell based on the physical parameters of the device, simulation configuration parameters, and phase transition state data of the storage cell. The StateController module 2 is used to control the phase transition process of the storage unit based on the changes in physical quantity data and generate corresponding phase transition instructions. The crystallization rate and melting rate update module (RateUpdater) 3 is used to update the crystallization rate and melting rate of the storage unit according to the phase change command and physical quantity data, so as to obtain the phase change state data of the storage unit and upload it to the physics engine module 1; The EnergyMonitor module 4 is used to monitor voltage, current and time parameters in physical quantity data, calculate the energy consumption of each operation cycle, and generate an energy consumption analysis report.

[0015] It should be noted that the aforementioned phase change storage device simulation system adopts a modular design. The physics engine module can dynamically calculate physical quantities such as resistance, current, and temperature of the storage unit based on the current physical state and operational requests, providing physical characteristic data support for other modules. The state controller module can control the phase change process of the storage unit through a hysteresis state machine based on changes in physical quantities such as temperature, generating phase change commands and transmitting them to the crystallinity and melting rate update module. The crystallinity and melting rate update module can update the crystallinity and melting rate of the storage unit based on the phase change commands and the physical quantity data provided by the physics engine module, reflecting the changes in the phase change state of the material. The energy consumption statistics module can monitor and statistically analyze the energy consumption of the phase change device in real time during different operational processes, providing data support for system-level energy consumption analysis and optimization. The aforementioned storage unit refers to the smallest physical unit in the phase change storage device used to complete data storage and realize the phase transition between crystalline and amorphous states.

[0016] In the phase-change memory device simulation system provided in this embodiment of the invention, by setting up a physics engine module, a state controller module, a crystallization rate and melting rate update module, and an energy consumption statistics module, after receiving an operation request, the system can accurately calculate various physical quantity data of the storage unit based on the device physical parameters, simulation configuration parameters, and phase change state data of the storage unit, providing reliable data support and basis for the precise control of the phase change process. The state controller module can accurately control the phase change process of the storage unit and generate appropriate phase change commands based on the real-time changes in physical quantity data, ensuring that the phase change behavior is executed stably and orderly according to the preset logic. The crystallization rate and melting rate update module can update the crystallization rate and melting rate of the storage unit in real time according to the phase change commands and physical quantity data, forming phase change state data that can be transmitted back to the physics engine module, realizing closed-loop iteration and continuous correction of state information during the simulation process, and improving the accuracy and consistency of simulation results. The energy consumption statistics module can monitor the voltage, current, and time parameters in the physical quantity data in real time, accurately calculate the energy consumption of each operation cycle, and generate an energy consumption analysis report, providing intuitive and quantitative data reference for power consumption optimization, structural improvement, and performance evaluation of phase-change memory devices. Overall, it realizes the systematic and system-level co-simulation of the entire process of phase change memory devices, from physical behavior modeling, state control, process updating to energy consumption analysis, effectively improving simulation accuracy, efficiency and completeness, and reducing the cost and cycle of actual device research and development and testing.

[0017] It should be noted that the aforementioned phase-change memory device simulation system can be built based on SystemC (a system-level C language modeling framework). The modules within this system can be interconnected and interact through SystemC signal and transaction-level modeling (TLM), supporting multi-scenario simulations from single-particle to array-level. This can be referred to as an Electronic System Level (ESL) simulation model for phase-change memory devices. In practical applications, electronic system-level (ESL) modeling plays a crucial role in the development of solid-state drives (SSDs). In the early stages of development, it helps design teams quickly build system-level models of the controller chip, simulating and verifying the chip architecture and functions, identifying and correcting potential design flaws early, optimizing the architecture, improving development efficiency, and reducing development costs and risks. During development, the ESL model can serve as a verification platform to continuously verify chip functions and performance, ensuring it meets the requirements of the SSD system. It also facilitates collaborative verification with other system components, enhancing design quality and reliability. Furthermore, performance analysis and optimization can be conducted based on the ESL model, simulating chip performance under different operating conditions, adjusting and optimizing design parameters, improving performance, and meeting the ever-increasing storage performance demands. This lays a solid foundation for the efficient development and stable application of SSDs. In the SSD development process, ESL models of phase-change memory (PCM) devices are of paramount importance. ESL models can quickly simulate the operation of PCM devices in SSD systems, identifying architectural flaws and logical errors early, avoiding high modification costs later. They can simulate the read / write latency, lifespan, and other performance characteristics of PCM devices under different operating conditions, guiding the optimization of controller chip algorithms and improving system performance and reliability. Simultaneously, it can be collaboratively verified with other modules of the main control chip to ensure efficient collaboration between modules. Furthermore, the electronic system-level model can simulate the impact of different environmental conditions on phase-change memory devices, identifying potential reliability issues early and optimizing the design, thereby reducing product failure rates and after-sales costs. In the early stages of SSD development, this invention's electronic system-level model of the phase-change memory device helps design teams quickly build a system-level model of the main control chip, simulating and verifying the chip architecture and functions in advance. This allows potential design flaws and logical errors to be identified and corrected early, avoiding high modification costs later and significantly shortening the development cycle.

[0018] Furthermore, in specific implementations, the phase-change memory device simulation system provided in the embodiments of the present invention may further include: The interface module (PCM_ONFI_Interface) is used to monitor externally received protocol signals, identify operation command types, parse address information and control data transmission, and pass the corresponding operation requests to the physical engine module and the state controller module. The parameter management module (PCM_Params) is used to uniformly manage the physical parameters and simulation configuration parameters of the devices and pass them to the physics engine module; The bridging module (System_bridge) is used to realize signal connection, protocol conversion and timing coordination with external control units.

[0019] In implementation, the interface module is responsible for receiving external Open NAND Flash Interface (ONFI) protocol signals, performing command parsing, address decoding, and data transmission control, and passing the corresponding operation requests to the state controller module and the physical engine module. The parameter management module centrally manages various physical and configuration parameters, supports loading parameters from configuration files, and provides parameter access interfaces to other modules. The bridging module connects the aforementioned interface modules with external control units (such as system-on-a-chip models), enabling signal and protocol conversion and timing control, thereby achieving connection simulation between the interface modules and external control units. This allows for efficient interface between the simulation system and external signals, parameters, and control units, ensuring stable and reliable protocol parsing, parameter management, and signal interaction, and improving the compatibility and ease of use of the simulation system.

[0020] Furthermore, in a specific implementation, in the phase change storage device simulation system provided in the embodiments of the present invention, the physics engine module may include: a resistance calculation unit, used to calculate the resistance value of the storage unit based on the crystalline resistance and amorphous resistance provided by the parameter management module, combined with the crystallinity and melting rate passed in by the crystallinity and melting rate update module; a current calculation unit, used to calculate the current value using a piecewise linear and hyperbolic sine hybrid model, combined with the voltage across the storage unit and the calculated resistance value; and a temperature calculation unit, used to calculate the temperature of the storage unit based on the balance between Joule heating and heat dissipation.

[0021] In implementation, the physics engine module includes resistance calculation, current calculation, and temperature calculation units. The resistance calculation unit can calculate resistance based on parameters such as crystallinity (Fc), melting rate (Fm), and pre-defined crystalline resistance (Rc) and amorphous resistance (Ra), according to the formula [R_PCM=Fc]. Rc+Fm Rc+(1-Fc-Fm) The dynamic calculation of the resistance value of the memory cell provides a foundation for read operations and current calculations. The current calculation unit combines the voltage (V) and resistance (R_PCM) across the current memory cell to calculate the current value (I) based on a piecewise linear and hyperbolic sine hybrid model. In the low-voltage linear region, Ohm's law is used directly to calculate the current; in the high-voltage nonlinear region, a hyperbolic sine function is used to describe the relationship between current and voltage, to more accurately reflect the nonlinear conductivity characteristics of the phase-change memory device material. The temperature calculation unit comprehensively considers the Joule heating effect and heat dissipation process. Based on a dynamic heat dissipation and Joule thermal balance model, it calculates the cell temperature (T) by combining parameters such as the memory cell's geometry, thermal conductivity, heat dissipation coefficient, specific heat capacity, and ambient temperature, ensuring the accuracy of temperature simulation. This allows for precise simulation of the resistance switching characteristics (dynamic transition between crystalline and amorphous states), nonlinear IV characteristics (threshold conduction and hyperbolic sinusoidal behavior), and temperature-dependent characteristics (the influence of Joule heating and heat dissipation on phase transitions) of storage cells. It accurately reflects the performance of phase-change memory devices under different operating conditions, such as read / write latency and lifespan, providing a strong basis for optimizing the main control chip algorithm. This enhances the overall performance and reliability of solid-state drive systems, meeting the high-performance storage needs of numerous fields such as data centers, embedded systems, IoT devices, artificial intelligence, and machine learning.

[0022] Furthermore, in a specific implementation, in the phase change storage device simulation system provided in the embodiments of the present invention, the state controller module may include: a hysteresis state machine, used to determine the current phase change state of the storage unit based on the storage unit temperature data input from the physics engine module; a control logic unit, used to generate a crystallization command when the current phase change state of the storage unit is determined to be a crystallization state; and to generate a melting command when the current phase change state of the storage unit is determined to be a melting state; and to transmit the crystallization command or melting command to the crystallization rate and melting rate update module through a feedback mechanism to drive the phase change process of the storage unit.

[0023] In implementation, the state controller module incorporates a hysteresis state machine and a control logic unit. The hysteresis state machine, based on temperature data (temp) provided by the physics engine module, determines the current phase transition state of the storage unit according to its own logic. When the temperature is below (Tc-Tc_hy), the storage unit is in a hold state (HOLD) and does not perform a phase transition operation. When the temperature is between (Tc-Tc_hy) and Tm, it is in a crystallization state (CRYSTALLIZE) and sends a crystallization command to the crystallization rate and melting rate update module. When the temperature is above (Tm+Tm_hy), it is in a melting state (MELT) and sends a melting command to the crystallization rate and melting rate update module. The control logic unit generates corresponding control commands (ctrl_cmd) based on the hysteresis state machine's determination and transmits these commands to the crystallization rate and melting rate update module via a feedback mechanism to drive the phase transition process of the storage unit. This enables accurate and stable determination of the storage unit's phase transition state based on temperature, and reliable control of the phase transition process through closed-loop feedback, improving the accuracy and stability of simulation control.

[0024] Furthermore, in a specific implementation, in the phase change memory device simulation system provided in the embodiments of the present invention, the crystallization rate and melting rate update module may include: a crystallization rate update unit, used to update the crystallization rate according to the current crystallization rate, time step, and crystallization time constant when a crystallization command is received, so as to reflect the state change of the device material during the crystallization process; a melting rate update unit, used to update the melting rate according to the current melting rate, temperature, melting temperature, temperature diffusion coefficient, and melting time constant when a melting command is received, so as to simulate the state change of the device material during the melting process; and a state holding unit, used to freeze the update of the crystallization rate and melting rate when in a holding state, so as to keep the current phase change state unchanged.

[0025] In implementation, the crystallization rate and melt rate update module includes a crystallization rate update unit, a melt rate update unit, and a state maintenance unit. Specifically, when the crystallization rate update unit receives a crystallization command (CRYSTALLIZE), it can update the crystallization rate based on the current crystallization rate (Fc_prev), time step (Δt), and crystallization time constant (τc), according to the formula [Fc=1-(1-Fc_prev]]. The crystallinity (Fc) is updated using the formula [e^(-Δt / τc)], accurately reflecting the state changes of the phase change storage device material during the crystallization process. Upon receiving a melt command (MELT), the melt rate update unit combines the current melt rate (Fm_prev), temperature (T), melting temperature (Tm), temperature diffusion coefficient (δ), and melting time constant (τm) to update the melt rate using the formula [Fm=1 / (1+e^((T-Tm) / δ))+(Fm_prev-1 / (1+e^((T-Tm) / δ))]. The melt ratio (Fm) is updated using [e^(-Δt / τm)], realistically simulating the state changes of phase change memory (PCM) materials during the melting process. When the state-holding unit is in the hold state (HOLD), the updates to the crystallinity and melt ratio can be frozen, maintaining the current state stability of the memory unit. This allows for precise and dynamic updates to the crystallinity and melt ratio according to corresponding instructions, and stable parameter locking in the hold state, realistically reproducing the state evolution process of the PCM.

[0026] Furthermore, in a specific implementation, in the phase-change memory device simulation system provided in the embodiments of the present invention, the energy consumption statistics module may include: an energy consumption calculation unit, used to monitor the voltage, current and time step calculated by the physics engine module, and calculate the total energy consumption in each operation cycle; a classification statistics unit, used to classify and accumulate the total energy consumption according to the current operation type, and record the energy consumption data of set operation, reset operation and read operation respectively; and a report output unit, used to generate an energy consumption analysis report based on the accumulated energy consumption data at the end of the simulation or at a set time.

[0027] In implementation, the energy consumption statistics module includes an energy consumption calculation unit, a classification statistics unit, and a report output unit. The energy consumption calculation unit can monitor the voltage (V), current (I), and time step (Δt) in the physics engine module in real time, according to the formula [E_total=∑(V I The total energy consumption (E_total) of the device in each operation cycle is calculated using the parameter Δt). The classification and statistics unit categorizes energy consumption into three types based on the current operation type (op_type): set operation energy consumption (energy_set), reset operation energy consumption (energy_reset), and read operation energy consumption (energy_read), and performs cumulative statistics for each. The report output unit can generate a detailed energy consumption report at the end of the simulation or at a specific time, outputting information such as the total energy consumption and the energy consumption percentage of each type of operation, providing users with a clear overview of energy consumption analysis results. This provides strong data support for system-level energy consumption analysis and optimization, helping users better understand the energy consumption characteristics of phase-change memory devices and take corresponding optimization measures to reduce power consumption and improve the system's energy efficiency ratio.

[0028] Furthermore, in a specific implementation, in the phase-change memory device simulation system provided in the embodiments of the present invention, the interface module may include: a type judgment unit, used to determine the data type transmitted on the bus according to the state of the command latch enable signal and the address latch enable signal when a valid chip selection signal is detected; a command parsing unit, used to read the command data on the bus, parse the command type, and transmit the parsing result to the state controller module; an address decoding unit, used to read the address data on the bus, decode and decompose the address data, and transmit the decomposition result to the physical engine module to determine the location of the memory unit to be operated; and a data transmission control unit, used to obtain the corresponding data from the physical engine module and send it to the external device during a read operation, and to receive the data transmitted from the external device and transmit it to the physical engine module for writing during a write operation.

[0029] In implementation, the interface module includes a type determination unit, a command parsing unit, an address decoding unit, and a data transmission control unit. The type determination unit continuously monitors external ONFI protocol signal lines. When the chip select signal (nChip Select, nCS) is active, it determines whether the data on the address / data bus (AD) is a command, address, or data based on the states of the command latch enable signal (CLE) and the address latch enable signal (ALE). When CLE is active, the command parsing unit reads the command data on the AD bus, parses the specific ONFI command type (e.g., Read, Program, Erase), and transmits the command information to the status controller module. When ALE is active, the address decoding unit reads the address data on the AD bus, decomposes the address into block address, page address, and byte address according to the address format specified by the ONFI protocol, and transmits the address information to the physical engine module to locate the memory cell to be operated on. During a read operation, the data transmission control unit obtains data from the storage unit from the physical engine module based on the state of the read enable signal (n Read Enable, nRE) and sends it to the external controller via the data bus (Data Qualifier / Data Bus, DQ). During a write operation, it receives data from the DQ bus based on the state of the write enable signal (n Write Enable, nWE) and passes it to the physical engine module for writing.

[0030] Furthermore, in a specific implementation, in the phase-change memory device simulation system provided in the embodiments of the present invention, the parameter management module may include: a parameter loading unit, used to read various physical parameters and simulation configuration parameters of the device from the configuration file and store them uniformly in an internal data structure; a parameter access unit, used to provide a parameter access interface; and a parameter configuration unit, used to support modifying parameter values ​​during simulation operation and to notify relevant modules to update parameter copies after modification.

[0031] In implementation, the parameter management module includes a parameter loading unit, a parameter access unit, and a parameter configuration unit. The parameter loading unit can read various physical and configuration parameters of the device from configuration files (such as JSON format), including resistance values ​​(crystalline resistance Rc, amorphous resistance Ra), temperature parameters (crystallization temperature Tc, melting temperature Tm), nonlinear voltage parameters (V_th0, V_oc), and time constants (τc, τm), and stores these parameters in the module's internal data structure. The parameter access unit provides parameter access interfaces for other modules, enabling them to easily obtain the required parameter values. When other modules need to use a parameter, they only need to call the corresponding interface function of the parameter management module to obtain the corresponding parameter value. The parameter configuration unit supports dynamic modification of parameter values ​​during model execution and promptly notifies relevant modules to update their internal parameter copies, thereby achieving dynamic configuration and adjustment of the device model. This allows users to configure the physical parameters of phase-change memory (PCM) chips, simulate the behavior of various PCM chips, and identify potential reliability issues in advance. This enables R&D personnel to optimize the design in advance, reduce the failure rate and after-sales costs of the product during actual use, and ensure the stable operation of solid-state drives in various application scenarios.

[0032] Figure 2 This is a schematic diagram illustrating the system workflow and inter-module interaction process provided in an embodiment of the present invention. Figure 2 As shown, the workflow of the phase change storage device simulation system can be divided into five steps: "initialization phase", "read operation process", "write operation process", "erase operation process" and "energy consumption statistics and reporting".

[0033] During the initialization phase, physical parameters are loaded first. Specifically, model characteristic parameters such as crystalline resistance Rc, amorphous resistance Ra, crystallization temperature Tc, and melting temperature Tm are read from the configuration file and filled into the structure of the parameter management module. These parameters will directly affect subsequent physical calculations and state determinations. After each module completes initialization, it enters a ready state, waiting to receive external signals and commands.

[0034] In the read operation process, the interface module first detects the read command from the external ONFI protocol, identifies the command type through the command parsing unit, and passes the read request to the status controller module. Then, the status controller module determines whether the read operation conditions are met based on the current physical state of the storage cell, such as temperature. If the conditions permit, the status controller module sends a data read request to the physical engine module. The physical engine module calculates the resistance value (R_PCM) of the storage cell based on the current physical state (such as crystallinity Fc, melting rate Fm, etc.), and determines the logical state (0 or 1) of the storage cell through the resistance-logic state mapping relationship, returning the data to the status controller module. After receiving the data returned by the physical engine module, the status controller module sends the data to the external controller via the DQ bus through the data transmission control submodule of the interface module. Simultaneously, the energy consumption statistics module calculates and records the energy consumption of this read operation based on the voltage, current, and time information during the read operation, and updates the total energy consumption statistics.

[0035] In the write operation process, the interface module first receives the write command (Program) and the data to be written from the external ONFI protocol. The command parsing unit identifies the write operation and passes the write request and data to the state controller module. Then, the state controller module determines whether a phase change operation is needed to complete the write operation based on the current physical state of the storage cell, such as temperature. If a phase change is required, the state controller module sends a phase change command (crystallization or melting) to the crystallization rate and melting rate update module (RateUpdater) and notifies the physical engine module to prepare for the physical quantity calculations of the phase change process. Afterward, the crystallization rate and melting rate update module calculates the new crystallization rate and melting rate according to the phase change command and the current physical state (such as temperature and time) using the corresponding update algorithm (such as the crystallization rate update formula or melting rate update formula), and feeds the update results back to the physical engine module. The physical engine module recalculates the resistance value of the storage cell based on the updated crystallization rate and melting rate, and calculates physical quantities such as current and temperature in conjunction with the voltage signal of the write operation. Simultaneously, the physical engine module stores the written data in the corresponding storage cell. The energy consumption statistics module records the energy consumption during the write operation. The interface module reads the data from the storage unit to confirm whether the write operation was successful and then sends the result back to the external controller.

[0036] During the erase operation, after receiving the erase command (Erase) from the external ONFI protocol, the interface module parses and identifies the erase operation and passes the erase request to the state controller module. The state controller module determines the memory cell region to be erased based on the received address information and sends an erase request to the physical engine module. During the erase operation, the physical engine module typically needs to transform the memory cell from a crystalline state to an amorphous state. The crystallinity and melting rate update module updates the melting rate according to the instructions from the state controller module to simulate the phase transition during the erase process. The physical engine module calculates the changes in physical quantities such as resistance, current, and temperature during the erase operation and executes the erase operation. The energy consumption statistics module calculates the energy consumption of the erase operation. After the erase operation is completed, the interface module sends an erase completion signal to the external controller, indicating that the memory cell is ready for subsequent operations.

[0037] In the energy consumption statistics and reporting, the energy consumption statistics module continuously monitors parameters such as voltage, current, and time during each operation of the device model. It calculates the energy consumption for each operation cycle according to formulas and categorizes the data by operation type (SET, RESET, READ). At the end of the simulation or at a specific moment, the energy consumption statistics module generates a detailed energy consumption report based on the accumulated energy consumption data. This report includes total energy consumption and the energy consumption percentage for each type of operation, and is provided to the user through an interface module or other output methods for analyzing and optimizing the device's energy consumption performance.

[0038] Furthermore, in a specific implementation, in the phase-change memory device simulation system provided in the embodiments of the present invention, the bridging module may include: a signal bridging unit, used to receive signals from an external control unit, convert the received signals into signals conforming to the target protocol, and transmit them to the interface module; a protocol conversion unit, used to convert the internal communication protocol of the external control unit into the target protocol; and a timing control unit, used to coordinate the timing between the interface module and the external control unit.

[0039] Figure 3 This is a schematic diagram illustrating the integration method of the phase-change memory device model provided in an embodiment of the present invention. Figure 3 As shown, in the SystemC simulation environment, the system-on-a-chip (SoC) model, bridge module, and interface module are connected. The SoC model can be connected to the bridge module via its bus interface, and the bridge module is then connected to the interface module via the ONFI protocol interface. The bridge module is responsible for bridging the signals of the SoC and the signals of the interface module.

[0040] In implementation, the bridging module includes a signal bridging unit, a protocol conversion unit, and a timing control unit. The signal bridging unit receives signals from external control units, such as address bus, data bus, and control signals, and converts these signals into ONFI-compliant signals before transmitting them to the interface module. The protocol conversion unit converts the internal communication protocol of the external control unit to the ONFI protocol. For example, the external control unit may use AXI or other internal bus protocols; the bridging module needs to convert these protocols to ONFI to ensure correct data and command transmission between them. The timing control unit coordinates the timing of the external control unit and the interface module, ensuring that signal transmission and reception meet the timing requirements of both parties. This includes clock signal synchronization and data hold time control.

[0041] This invention, after writing a test stimulus program, can simulate read and write operations of an external control unit on a phase-change memory device. The test stimulus program sends read / write commands and data through the external control unit, which are then converted by the bridging module and passed to the interface module. Then, the SystemC emulator is started to run the simulation. During the simulation, the interaction between the external control unit, the bridging module, and the interface module is observed to verify the correctness of data transmission and the accuracy of timing. Finally, the output of the interface module is checked to see if it meets expectations, verifying that the read / write operations were successfully completed. Simultaneously, the protocol conversion and timing control of the bridging module are checked to ensure that the overall system functionality and performance meet the requirements.

[0042] In the above embodiments, the phase change memory device simulation system has been described in detail. Based on the same inventive concept, the embodiments of the present invention also provide a simulation method for the phase change memory device simulation system and corresponding embodiments for electronic devices.

[0043] This invention also provides a simulation method for the above-described phase-change memory device simulation system. Figure 4 This is a flowchart of a simulation method for a phase-change memory device simulation system provided in an embodiment of the present invention. Figure 4 As shown, the simulation method for a phase-change memory device simulation system may specifically include the following steps: S401 After receiving the operation request, the physics engine module calculates the physical quantity data of the storage unit based on the physical parameters of the device, the simulation configuration parameters, and the phase transition state data of the storage unit.

[0044] S402, the state controller module controls the phase transition process of the storage unit based on the changes in physical quantity data, and generates corresponding phase transition instructions.

[0045] S403, the crystallization rate and melting rate update module updates the crystallization rate and melting rate of the storage unit according to the phase change command and physical quantity data, so as to obtain the phase change state data of the storage unit and upload it to the physics engine module.

[0046] S404, the energy consumption statistics module monitors the voltage, current and time parameters in the physical quantity data, calculates the energy consumption for each operation cycle, and generates an energy consumption analysis report.

[0047] In the simulation method of the phase change memory device simulation system provided in the embodiments of the present invention, by executing the above steps S401 to S404, various physical quantity data of the memory unit can be accurately calculated based on the device physical parameters, simulation configuration parameters and phase change state data of the memory unit, providing reliable data support and basis for the precise control of the phase change process; based on the real-time changes of physical quantity data, the phase change process of the memory unit can be accurately controlled and appropriate phase change instructions can be generated to ensure that the phase change behavior is executed stably and orderly according to the preset logic; the crystallization rate and melting rate of the memory unit are updated in real time according to the phase change instructions and physical quantity data, forming phase change state data that can be returned to the physics engine module, realizing closed-loop iteration and continuous correction of state information during the simulation process, and improving the accuracy and consistency of simulation results; the voltage, current and time parameters in the physical quantity data are monitored in real time, the energy consumption of each operation cycle is accurately calculated and an energy consumption analysis report is generated, providing intuitive and quantitative data reference for the power consumption optimization, structural improvement and performance evaluation of phase change memory devices. Overall, it realizes the systematic and system-level co-simulation of the entire process of phase change memory devices, from physical behavior modeling, state control, process updating to energy consumption analysis, effectively improving simulation accuracy, efficiency and completeness, and reducing the cost and cycle of actual device research and development and testing.

[0048] Since the embodiments of the simulation method section correspond to the embodiments of the phase-change memory device simulation system section, the embodiments of the simulation method section are described in the description of the embodiments of the phase-change memory device simulation system section, and will not be repeated here. Furthermore, it has the same beneficial effects as the phase-change memory device simulation system mentioned above.

[0049] Furthermore, in specific implementations, the simulation method of the phase-change memory device simulation system provided in the embodiments of the present invention may further include: an interface module monitoring externally input protocol signals, identifying operation command types, parsing address information and control data transmission, and transmitting the corresponding operation requests to the physical engine module and the state controller module; a parameter management module uniformly managing the physical parameters and simulation configuration parameters of the device and transmitting them to the physical engine module; and a bridging module realizing signal connection, protocol conversion and timing coordination with the external control unit.

[0050] Furthermore, in a specific implementation, in the simulation method of the phase change storage device simulation system provided in the embodiments of the present invention, the physics engine module includes a resistance calculation unit, a current calculation unit, and a temperature calculation unit. After receiving the operation request in step S401, the physics engine module calculates the physical quantity data of the storage unit according to the physical parameters of the device, the simulation configuration parameters, and the phase change state data of the storage unit. Specifically, this may include: the resistance calculation unit calculating the resistance value of the storage unit based on the crystalline resistance and amorphous resistance provided by the parameter management module, combined with the crystallinity and melting rate passed in by the crystallinity and melting rate update module; the current calculation unit calculating the current value using a piecewise linear and hyperbolic sine hybrid model, combined with the voltage across the storage unit and the calculated resistance value; and the temperature calculation unit calculating the temperature of the storage unit based on the balance between Joule heating and heat dissipation.

[0051] Furthermore, in a specific implementation, in the simulation method of the phase change storage device simulation system provided in the embodiments of the present invention, the state controller module includes a hysteresis state machine and a control logic unit. In step S402, the state controller module controls the phase change process of the storage unit according to the change of physical quantity data and generates corresponding phase change instructions. Specifically, it may include: the hysteresis state machine determining the current phase change state of the storage unit based on the storage unit temperature data input from the physics engine module; the control logic unit generating a crystallization instruction when it determines that the current phase change state of the storage unit is a crystallization state; generating a melting instruction when it determines that the current phase change state of the storage unit is a melting state; and transmitting the crystallization instruction or melting instruction to the crystallization rate and melting rate update module through a feedback mechanism to drive the phase change process of the storage unit.

[0052] Furthermore, in a specific implementation, in the simulation method of the phase change storage device simulation system provided in the embodiments of the present invention, the crystallization rate and melting rate update module includes a crystallization rate update unit, a melting rate update unit, and a state holding unit. In step S403, the crystallization rate and melting rate update module updates the crystallization rate and melting rate of the storage unit according to the phase change command and physical quantity data to obtain the phase change state data of the storage unit and upload it to the physics engine module. Specifically, it may include: when a crystallization command is received, the crystallization rate update unit updates the crystallization rate according to the current crystallization rate, time step, and crystallization time constant to reflect the state change of the device material during the crystallization process; when a melting command is received, the melting rate update unit updates the melting rate according to the current melting rate, temperature, melting temperature, temperature diffusion coefficient, and melting time constant to simulate the state change of the device material during the melting process; when in a holding state, the state holding unit freezes the updates of the crystallization rate and melting rate to keep the current phase change state unchanged.

[0053] Furthermore, in a specific implementation, in the simulation method of the phase-change memory device simulation system provided in the embodiments of the present invention, the energy consumption statistics module includes an energy consumption calculation unit, a classification statistics unit, and a report output unit. In step S404, the energy consumption statistics module monitors the voltage, current, and time parameters in the physical quantity data, calculates the energy consumption of each operation cycle, and generates an energy consumption analysis report. Specifically, it may include: the energy consumption calculation unit monitors the voltage, current, and time step calculated by the physical engine module, and calculates the total energy consumption in each operation cycle; the classification statistics unit classifies and accumulates the total energy consumption according to the current operation type, and records the energy consumption data of the set operation, reset operation, and read operation respectively; the report output unit generates an energy consumption analysis report based on the accumulated energy consumption data at the end of the simulation or at a set time.

[0054] For more detailed information on the working process of each of the above steps, please refer to the relevant content disclosed in the foregoing embodiments, which will not be repeated here.

[0055] Based on the same inventive concept, embodiments of the present invention also provide an electronic device, including the aforementioned phase-change memory device simulation system. Since the principle by which this electronic device solves the problem is similar to that of the aforementioned phase-change memory device simulation system, the implementation of this electronic device can refer to the implementation of the phase-change memory device simulation system; repeated details will not be elaborated further.

[0056] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0057] The above provides a detailed description of the phase-change memory device simulation system and simulation method provided by this invention. Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the above embodiments are only intended to help understand the method and core ideas of this invention. It should be noted that those skilled in the art can make various improvements and modifications to this invention without departing from its principles, and these improvements and modifications also fall within the protection scope of this invention.

Claims

1. A phase-change memory device simulation system, characterized in that, include: The physics engine module is used to receive operation requests and calculate the physical quantity data of the storage unit based on the physical parameters of the device, simulation configuration parameters, and phase transition state data of the storage unit. The state controller module is used to control the phase transition process of the storage unit and generate corresponding phase transition instructions based on the changes in the physical quantity data. The crystallization rate and melting rate update module is used to update the crystallization rate and melting rate of the storage unit according to the phase change command and the physical quantity data, so as to obtain the phase change state data of the storage unit and upload it to the physics engine module. The energy consumption statistics module is used to monitor the voltage, current and time parameters in the physical quantity data, count the energy consumption of each operation cycle, and generate an energy consumption analysis report.

2. The phase-change memory device simulation system according to claim 1, characterized in that, Also includes: The interface module is used to monitor externally input protocol signals, identify operation command types, parse address information and control data transmission, and transmit the corresponding operation requests to the physical engine module and the state controller module. The parameter management module is used to uniformly manage the physical parameters and simulation configuration parameters of the device and transmit them to the physics engine module; The bridging module is used to realize signal connection, protocol conversion and timing coordination with external control units.

3. The phase-change memory device simulation system according to claim 1, characterized in that, The physics engine module includes: The resistance calculation unit is used to calculate the resistance value of the storage unit based on the crystalline resistance and amorphous resistance provided by the parameter management module, combined with the crystallization rate and melting rate passed in by the crystallization rate and melting rate update module. The current calculation unit is used to calculate the current value by combining the voltage across the storage unit and the calculated resistance value, using a piecewise linear and hyperbolic sinusoidal hybrid model. The temperature calculation unit is used to calculate the temperature of the storage unit based on the balance between Joule heating and heat loss through diffusion.

4. The phase-change memory device simulation system according to claim 1, characterized in that, The state controller module includes: A hysteresis state machine is used to determine the current phase transition state of the storage unit based on the storage unit temperature data input from the physics engine module. The control logic unit is used to generate a crystallization command when it is determined that the current phase transition state of the storage unit is a crystallization state, and to generate a melting command when it is determined that the current phase transition state of the storage unit is a melting state; and to transmit the crystallization command or the melting command to the crystallization rate and melting rate update module through a feedback mechanism to drive the phase transition process of the storage unit.

5. The phase-change memory device simulation system according to claim 4, characterized in that, The crystallinity and melting rate updating module includes: The crystallization rate update unit is used to update the crystallization rate according to the current crystallization rate, time step and crystallization time constant when the crystallization command is received, so as to reflect the state change of the device material during the crystallization process. The melt rate update unit is used to update the melt rate according to the current melt rate, temperature, melting temperature, temperature diffusion coefficient and melting time constant when the melting command is received, so as to simulate the state change of the device material during the melting process; The state-holding unit is used to update the frozen crystallization rate and melting rate when in the holding state, so as to keep the current phase transformation state unchanged.

6. The phase-change memory device simulation system according to claim 1, characterized in that, The energy consumption statistics module includes: The energy consumption calculation unit is used to monitor the voltage, current and time step calculated by the physics engine module, and calculate the total energy consumption in each operation cycle. The classification and statistics unit is used to classify and accumulate the total energy consumption according to the current operation type, and record the energy consumption data of set operation, reset operation and read operation respectively; The report output unit is used to generate an energy consumption analysis report based on the accumulated energy consumption data at the end of the simulation or at a set time.

7. The phase-change memory device simulation system according to claim 2, characterized in that, The interface module includes: The type determination unit is used to determine the data type transmitted on the bus based on the state of the command latch enable signal and the address latch enable signal when a valid chip select signal is detected. The command parsing unit is used to read command data on the bus, parse the command type, and transmit the parsing result to the status controller module. The address decoding unit is used to read address data on the bus, decode and decompose the address data, and transmit the decomposition result to the physical engine module to determine the location of the memory unit to be operated. The data transmission control unit is used to obtain corresponding data from the physical engine module and send it to an external device during a read operation, and to receive data from an external device and transmit it to the physical engine module for writing during a write operation.

8. The phase-change memory device simulation system according to claim 2, characterized in that, The parameter management module includes: The parameter loading unit is used to read various physical parameters and simulation configuration parameters of the device from the configuration file and store them uniformly in the internal data structure; The parameter access unit is used to provide a parameter access interface; The parameter configuration unit is used to support the modification of parameter values ​​during simulation operation, and to notify relevant modules to update the parameter copies after modification.

9. The phase-change memory device simulation system according to claim 2, characterized in that, The bridging module includes: A signal bridging unit is used to receive signals from the external control unit, convert the received signals into signals conforming to the target protocol, and transmit them to the interface module. A protocol conversion unit is used to convert the internal communication protocol of the external control unit into a target protocol. A timing control unit is used to coordinate the timing between the interface module and the external control unit.

10. A simulation method for a phase-change memory device simulation system as described in any one of claims 1 to 9, characterized in that, include: After receiving the operation request, the physics engine module calculates the physical quantity data of the storage unit based on the physical parameters of the device, the simulation configuration parameters, and the phase transition state data of the storage unit. The state controller module controls the phase transition process of the storage unit based on the changes in the physical quantity data, and generates corresponding phase transition instructions; The crystallization rate and melting rate update module updates the crystallization rate and melting rate of the storage unit according to the phase change command and the physical quantity data, so as to obtain the phase change state data of the storage unit and upload it to the physics engine module; The energy consumption statistics module monitors the voltage, current, and time parameters in the physical quantity data, calculates the energy consumption for each operation cycle, and generates an energy consumption analysis report.

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